KR20100067693A - 성막 장치 - Google Patents
성막 장치 Download PDFInfo
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- KR20100067693A KR20100067693A KR1020107011258A KR20107011258A KR20100067693A KR 20100067693 A KR20100067693 A KR 20100067693A KR 1020107011258 A KR1020107011258 A KR 1020107011258A KR 20107011258 A KR20107011258 A KR 20107011258A KR 20100067693 A KR20100067693 A KR 20100067693A
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4557—Heated nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45572—Cooled nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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Abstract
Description
도 2는 본 발명의 일 실시예에 따른 CVD 성막 장치의 샤워헤드 상부를 나타내는 평면도,
도 3은 도 1의 장치의 필러 부분을 확대하여 나타내는 단면도,
도 4는 도 1의 장치의 온도 제어 수단중, 가열 기구에 상당하는 부분을 나타내는 모식도,
도 5는 도 1의 장치의 온도 제어 수단에 의해 가열 제어하는 경우의 바람직한 제어 형태를 나타내는 도면,
도 6은 도 1의 장치의 샤워헤드를 반전 기구에 의해 반전시킨 상태를 나타내는 단면도,
도 7은 도 1의 장치의 샤워헤드의 확대도,
도 8은 도 7의 A-A선 단면도,
도 9는 도 7의 B-B선 단면도,
도 10은 가스 확산 촉진용 파이프가 설치된 경우의 하단 플레이트를 나타내는 평면도,
도 11은 도 10의 하단 플레이트 및 가스 확산 촉진용 파이프에 중단 플레이트를 장착한 상태의 단면도,
도 12는 도 4의 가열 기구에 상당하는 부분의 변형예를 나타내는 모식도,
도 13은 도 5의 제어 형태의 변형예를 나타내는 도면,
도 14는 본 발명의 다른 실시예에 따른 CVD 성막 장치를 나타내는 단면도,
도 15는 도 3의 필러 부분의 변형예를 나타내는 단면도.
샤워헤드 온도 | 스테이지 온도 | 대응 | |
종래기술 | 470℃ 내지 480℃ | 640℃ 내지 650℃ | 스테이지 온도를 성막 온도 이상으로 할 필요 있음 |
본 발명 | 500℃ | 640℃ | 샤워헤드를 직접적으로 온도 제어 |
4 : 지지 부재 7 : 스테이지 유지 부재
10 : 샤워헤드 10a : 상단 플레이트
10b : 중단 플레이트 10c : 하단 플레이트
13a : 제1 가스 토출 구멍 13b : 제 2 가스 토출 구멍
14a : 제 1 가스 도입관 14b : 제 2 가스 도입관
15 : 리드 부재 16 : 절연 부재
17 : 내측 히터 18 : 외측 히터
20 : 단열 부재 26 : 가스 도입 부재
47 : 고주파 전원 48 : 필러
53 : 배기 장치 60 : 온도 제어 수단
Claims (3)
- 피처리체를 처리하는 챔버와,
상기 챔버 내에 설치되고, 상기 피처리체가 탑재될 수 있는 탑재대와,
상기 탑재대에 대향하여 마련되고, 상기 챔버 내에 처리 가스를 공급하는 다수의 가스 토출공을 가지는 샤워헤드와,
상기 샤워헤드의 온도를 제어하는 샤워헤드 온도 제어 수단과,
상기 샤워헤드를 상기 챔버의 외측으로 선회하여 반전시키는 반전 기구를 구비하며,
상기 샤워헤드는 수평부와, 당해 수평부의 주연 영역으로부터 상방으로 연장하는 지지부를 가지며,
상기 지지부는 상기 수평부로부터 상방으로 연장하는 내벽면을 가지며,
상기 내벽면은 상기 수평부와 함께 캐비티를 규정하며,
상기 샤워헤드는 상기 내벽면으로부터 상기 캐비티 내로 반경 방향 내방으로 연장하는 리브를 가지는 것을 특징으로 하는
성막 장치. - 피처리체를 처리하는 챔버와,
상기 챔버 내에 설치되고, 상기 피처리체가 탑재될 수 있는 탑재대와,
상기 탑재대에 대항하여 마련되고, 상기 챔버 내에 처리 가스를 공급하는 다수의 가스 토출 구멍을 가지는 샤워헤드와,
상기 샤워헤드의 온도를 제어하는 샤워헤드 온도 제어 수단과,
상기 챔버 내에서 상기 처리 가스의 플라즈마를 생성하기 위한 플라즈마 생성 수단을 구비하며,
상기 샤워헤드는, 수평부와, 당해 수평부의 주연 영역으로부터 상방으로 연장하는 지지부를 가지며,
상기 지지부는 상기 수평부로부터 상방으로 연장하는 내벽면을 가지며,
상기 내벽면은 상기 수평부와 함께 캐비티를 규정하며,
상기 샤워헤드는 상기 내벽면으로부터 상기 캐비티 내로 반경 방향 내방으로 연장으로 리브를 가지는 것을 특징으로 하는
성막 장치. - 피처리체를 처리하는 챔버와,
상기 챔버 내에 설치되고, 상기 피처리체가 탑재될 수 있는 탑재대와,
상기 탑재대에 대향하여 마련되고, 상기 챔버 내에 처리 가스를 공급하는 다수의 가스 토출 구멍을 가지는 샤워헤드와,
상기 샤워헤드의 온도를 제어하는 샤워헤드 온도 제어 장치와,
상기 샤워헤드의 샤워헤드 본체 상 및 상기 샤워헤드의 지지부의 외측에 배치되는 단열 부재를 구비하며,
당해 샤워헤드를 덮도록 당해 샤워헤드의 위 또는 상방에 위치하는 대기 공간 내에 열차단 부재가 배치되고,
상기 샤워헤드 온도 제어 장치는
상기 대기 공간에 냉매를 공급함으로써 상기 샤워헤드를 냉각하는 냉각 기구와,
당해 샤워헤드를 가열하는 가열 기구와,
당해 샤워헤드의 온도를 검출하는 온도 검출 기구와,
상기 온도 검출 기구의 검출 결과에 기초하여 적어도 상기 가열 기구를 제어하는 컨트롤러를 구비하고,
상기 샤워헤드는,
상단 플레이트와,
중단 플레이트와,
당해 샤워헤드로부터 가스를 토출하기 위해서 토출 구멍을 가지는 하단 플레이트와,
상기 단열 부재와 상기 샤워헤드의 상기 지지부와의 사이에서 반경 방향으로 연장하는 열전달 요소를 가지는 것을 특징으로 하는
성막 장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2001034520 | 2001-02-09 | ||
JPJP-P-2001-034520 | 2001-02-09 |
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KR1020097014511A Division KR101004173B1 (ko) | 2001-02-09 | 2002-02-08 | 성막 장치 |
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KR20100067693A true KR20100067693A (ko) | 2010-06-21 |
KR101004222B1 KR101004222B1 (ko) | 2010-12-24 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020097014511A KR101004173B1 (ko) | 2001-02-09 | 2002-02-08 | 성막 장치 |
KR1020107011259A KR101004199B1 (ko) | 2001-02-09 | 2002-02-08 | 성막 장치 |
KR1020097002784A KR100945320B1 (ko) | 2001-02-09 | 2002-02-08 | 성막 장치 |
KR1020097002783A KR100945321B1 (ko) | 2001-02-09 | 2002-02-08 | 성막 장치 |
KR1020057018178A KR100676979B1 (ko) | 2001-02-09 | 2002-02-08 | 성막 장치 |
KR1020107011258A KR101004222B1 (ko) | 2001-02-09 | 2002-02-08 | 성막 장치 |
KR1020097014512A KR101004192B1 (ko) | 2001-02-09 | 2002-02-08 | 성막 장치 |
KR1020067006790A KR100735932B1 (ko) | 2001-02-09 | 2002-02-08 | 성막 장치 |
KR1020067006792A KR100922241B1 (ko) | 2001-02-09 | 2002-02-08 | 성막 장치 및 샤워헤드 구조체 |
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