KR100419756B1 - 박막 형성 장치 - Google Patents
박막 형성 장치 Download PDFInfo
- Publication number
- KR100419756B1 KR100419756B1 KR10-2001-0018266A KR20010018266A KR100419756B1 KR 100419756 B1 KR100419756 B1 KR 100419756B1 KR 20010018266 A KR20010018266 A KR 20010018266A KR 100419756 B1 KR100419756 B1 KR 100419756B1
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- Prior art keywords
- space
- partition plate
- plate
- film formation
- formation processing
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (5)
- 진공 반응실 내가 격벽판에 의해 플라즈마 방전 공간과 성막 처리 공간으로 분리되어 있고, 상기 격벽판은 내부에 상기 플라즈마 방전 공간과 격리되면서 상기 성막 처리 공간과 연통(連通)하고 있는 내부 공간을 갖고 있는 동시에, 상기 플라즈마 방전 공간과 성막 처리 공간을 관통하는 복수개의 구멍을 갖고 있는 것으로서, 상기 플라즈마 방전 공간에 가스를 도입하여 플라즈마에 의해 래디컬(radical)을 발생시켜, 이 래디컬을 상기 격벽판의 복수개의 구멍을 통하여 상기 성막 처리 공간에 도입하는 동시에, 상기 성막 처리 공간에 재료 가스를 직접 도입하여, 성막 처리 공간에서 상기 도입된 래디컬과 재료 가스를 반응시켜, 성막 처리 공간에 배치되어 있는 기판 상에 성막을 행하는 장치에 있어서,상기 격벽판은 적층된 복수매의 판체가 상호의 접촉면을 전역(全域)에 걸쳐 밀착시켜 고정 또는 접합되어 이루어지는 것임을 특징으로 하는 박막 형성 장치.
- 제 1항에 있어서,격벽판은 복수개의 금속 고정구에 의한 코킹(caulking)에 의해, 적층된 복수매의 판체가 상호의 접촉면을 전역에 걸쳐 밀착시켜 고정되어 있는 것이며, 상기 격벽판이 구비하고 있는 상기 복수개의 구멍은 상기 복수개의 금속 고정구를 관통하여 형성되어 있는 것을 특징으로 하는 박막 형성 장치.
- 제 1항에 있어서,격벽판은 외주에 나사부가 설치되어 있는 복수개의 금속 고정구를 적층된 복수매의 판체에 나사결합시키고, 상기 적층된 복수매의 판체가 상호의 접촉면을 전역에 걸쳐 밀착시켜 고정시켜 구성되어 있는 것이며, 상기 격벽판이 구비하고 있는 상기 복수개의 구멍은 상기 복수개의 금속 고정구를 관통하여 형성되어 있는 것을 특징으로 하는 박막 형성 장치.
- 제 1항에 있어서,격벽판은 적층된 복수매의 판체가 상호의 접촉면을 전역에 걸쳐 밀착시켜 상호 접합되어 이루어지는 것이고, 상기 격벽판이 구비하고 있는 상기 복수개의 구멍은 상기 내부 공간이 배치되어 있지 않은 위치를 관통하여 형성되어 있는 것을 특징으로 하는 박막 형성 장치.
- 제 1 항 내지 제 4 항 중 어느 한 항에 있어서,복수개의 구멍은 상기 구멍 내에서의 가스 유속을 u, 실질적인 구멍의 길이를 L, 상호 가스 확산 계수를 D라고 할 때, uL/D>1의 조건을 만족시키도록 형성되어 있는 것을 특징으로 하는 박막 형성 장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000-188667 | 2000-06-23 | ||
JP2000188667 | 2000-06-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20020001498A KR20020001498A (ko) | 2002-01-09 |
KR100419756B1 true KR100419756B1 (ko) | 2004-02-21 |
Family
ID=18688417
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2001-0018266A KR100419756B1 (ko) | 2000-06-23 | 2001-04-06 | 박막 형성 장치 |
Country Status (3)
Country | Link |
---|---|
US (2) | US7267724B2 (ko) |
KR (1) | KR100419756B1 (ko) |
TW (1) | TW575684B (ko) |
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JP5079949B2 (ja) * | 2001-04-06 | 2012-11-21 | 東京エレクトロン株式会社 | 処理装置および処理方法 |
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JP3991315B2 (ja) * | 2002-09-17 | 2007-10-17 | キヤノンアネルバ株式会社 | 薄膜形成装置及び方法 |
JP3671966B2 (ja) * | 2002-09-20 | 2005-07-13 | 日新電機株式会社 | 薄膜形成装置及び方法 |
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JP4451684B2 (ja) * | 2004-03-17 | 2010-04-14 | キヤノンアネルバ株式会社 | 真空処理装置 |
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2001
- 2001-04-06 KR KR10-2001-0018266A patent/KR100419756B1/ko active IP Right Grant
- 2001-04-26 TW TW90109985A patent/TW575684B/zh not_active IP Right Cessation
- 2001-05-23 US US09/862,458 patent/US7267724B2/en not_active Expired - Fee Related
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2007
- 2007-08-07 US US11/834,717 patent/US20080017500A1/en not_active Abandoned
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR19980071461A (ko) * | 1997-02-19 | 1998-10-26 | 미따라이 후지오 | 반응성 스퍼터링 장치 및 이를 이용하는 박막 형성 방법 |
Also Published As
Publication number | Publication date |
---|---|
US20020152960A1 (en) | 2002-10-24 |
US7267724B2 (en) | 2007-09-11 |
TW575684B (en) | 2004-02-11 |
US20080017500A1 (en) | 2008-01-24 |
KR20020001498A (ko) | 2002-01-09 |
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