JP4354519B2 - 磁気抵抗効果素子の製造方法 - Google Patents
磁気抵抗効果素子の製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 59
- 238000000034 method Methods 0.000 title claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 103
- 230000005291 magnetic effect Effects 0.000 claims abstract description 89
- 238000001020 plasma etching Methods 0.000 claims abstract description 73
- 230000000694 effects Effects 0.000 claims abstract description 52
- 238000005530 etching Methods 0.000 claims abstract description 49
- 239000007789 gas Substances 0.000 claims description 67
- 150000002500 ions Chemical class 0.000 claims description 40
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 13
- 230000005290 antiferromagnetic effect Effects 0.000 claims description 5
- 230000005415 magnetization Effects 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 150000001299 aldehydes Chemical class 0.000 claims description 2
- 150000001735 carboxylic acids Chemical class 0.000 claims description 2
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- 150000002170 ethers Chemical class 0.000 claims description 2
- 229930195733 hydrocarbon Natural products 0.000 claims description 2
- 150000002430 hydrocarbons Chemical class 0.000 claims description 2
- 150000002576 ketones Chemical class 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims 3
- 125000004430 oxygen atom Chemical group O* 0.000 claims 2
- 239000004215 Carbon black (E152) Substances 0.000 claims 1
- 150000001298 alcohols Chemical class 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000010408 film Substances 0.000 description 139
- 239000010410 layer Substances 0.000 description 113
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- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 11
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 9
- 238000000137 annealing Methods 0.000 description 9
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 9
- 229910019041 PtMn Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 239000011241 protective layer Substances 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 5
- 125000000217 alkyl group Chemical group 0.000 description 5
- 229910000077 silane Inorganic materials 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
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- 238000007254 oxidation reaction Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 3
- 229910003321 CoFe Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 229910002091 carbon monoxide Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 150000002831 nitrogen free-radicals Chemical class 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- SYBYTAAJFKOIEJ-UHFFFAOYSA-N 3-Methylbutan-2-one Chemical compound CC(C)C(C)=O SYBYTAAJFKOIEJ-UHFFFAOYSA-N 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- XNLICIUVMPYHGG-UHFFFAOYSA-N pentan-2-one Chemical compound CCCC(C)=O XNLICIUVMPYHGG-UHFFFAOYSA-N 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910017090 AlO 2 Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- 101000687448 Homo sapiens REST corepressor 1 Proteins 0.000 description 1
- 102100024864 REST corepressor 1 Human genes 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000012864 cross contamination Methods 0.000 description 1
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- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
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- 229910001873 dinitrogen Inorganic materials 0.000 description 1
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- 238000006073 displacement reaction Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- GVVPGTZRZFNKDS-JXMROGBWSA-N geranyl diphosphate Chemical compound CC(C)=CCC\C(C)=C\CO[P@](O)(=O)OP(O)(O)=O GVVPGTZRZFNKDS-JXMROGBWSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000004792 oxidative damage Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
- H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F41/308—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices lift-off processes, e.g. ion milling, for trimming or patterning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
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- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Magnetic Heads (AREA)
- Drying Of Semiconductors (AREA)
Description
反応性イオンエッチング装置、例えば、ICP(Inductive Coupled Plasma)プラズマ源搭載のエッチング装置の第1の反応性イオンエッチング室351において、以下の条件で、フォトレジスト層4をPRマスク5としたハードマスク層3のエッチングを行う。
エッチングガスの流量 :326mg/min(50sccm)
ハードマスク層3 :Ta層
ソース電力 :500W
バイアス電力 :70W
第1の反応性イオンエッチング室42内の圧力:0.8Pa
基板10を保持する基板ホルダの温度 :80℃
(2)ステップ102:ハードマスク層3をマスクとした多層磁性膜1のエッチング加工
ステップ101の工程で使用したのと同様の、反応性イオンエッチング装置、例えば、ICP(Inductive Coupled Plasma)プラズマ源搭載のエッチング装置の第2の反応性イオンエッチング室361において、以下の条件で、ハードマスク層(Ta層)3をマスクとした多層磁性膜1のエッチング加工を行う。
エッチングガスの流量 :18.756mg/min(15sccm)
ソース電力 :1000W
バイアス電力 :800W
第2の反応性イオンエッチング室43内の圧力:0.4Pa
基板10を保持する基板ホルダの温度 :40℃
エッチング時間 :3min
(3)ステップ103:ラジカル処理によるダメージ層6の還元
ラジカル処理室371で、以下の条件により、イオン電流密度4×10−7A/cm2以下のプラズマに晒すことによってダメージ層6の還元を行う。
高周波電力 :700W
基板処理空間内の圧力 :15(Pa)
基板の温度 :300℃
ラジカル処理時間 :3min
以上のような加工をした磁気抵抗効果素子と、ステップ101、102の工程のみ同じ条件で行って、ステップ103の工程を行わなかった磁気抵抗効果素子についてMR比(magnetoro resistance ratio=(Rmax−Rmin)/Rmin)を比較した。
製造装置の成膜処理室381において、以下の条件で、保護膜7として窒化アルミニウム(AlN)膜を13.56MHzの高周波高圧スパッタリング方法(Alターゲット)で成膜し、ダメージ層6を還元した多層磁性膜1に保護膜7で覆う。
成膜処理室45内の圧力 :8Pa
基板10を保持する基板ホルダの温度 :200℃
このように真空状態を維持したまま成膜処理室381を連設し、ここで保護膜を形成するようにしたため、イオン電流密度4×1−7A/cm2以下のプラズマに晒すことによってダメージ層が還元され、引き続いて、多層磁性膜を保護膜で覆ってしまうので、清浄な状態に維持することができる。
Claims (6)
- 磁性膜及び基板を有する磁気抵抗効果素子を用意する第1工程と、
前記磁性膜の所定領域を、反応性イオンエッチング法により、プラズマにより活性化された水素原子及び酸素原子の存在下でエッチングする第2工程と、並びに、
前記第2工程後の磁性膜をイオン電流密度4×10−7A/cm2以下のプラズマに曝す第3工程と、
を有し、
前記第3工程は、
還元性ガスを導入し、プラズマを形成するプラズマ形成工程と、
複数の貫通孔を有する第1部材を通過させることで、前記プラズマ形成工程により形成したプラズマからイオン及び電子を除去する除去工程と、
前記除去工程を経て前記イオン電流密度に調整され、ラジカルを主成分とするプラズマに、前記磁性膜を曝すことで、前記磁性膜に結合した前記酸素原子を還元する曝露工程と、を有することを特徴とする磁気抵抗効果素子の製造方法。 - 前記磁気抵抗効果素子は、反強磁性層、磁化固着層、絶縁層及びフリー層を有する素子であることを特徴とする請求項1に記載の製造方法。
- 前記反応性イオンエッチングは、アルコール類、ケトン類、カルボン酸類、アルデヒド類、エステル類及びエーテル類からなる化合物群より選択された少なくとも1種の化合物をエッチングガスとして用いることを特徴とする請求項1に記載の製造方法。
- 前記反応性イオンエッチングは、炭化水素類及び酸素含有化合物をエッチングガスとして用いることを特徴とする請求項1に記載の製造方法。
- 前記還元性ガスは、水素ガス及びアンモニアガスからなるガス群より選択した少なくとも1種のガスであることを特徴とする請求項1に記載の製造方法。
- 前記第2工程及び前記第3工程では、該第2工程から該第3工程までの全工程が大気に曝されることなく実施されることを特徴とする請求項1に記載の製造方法。
Applications Claiming Priority (3)
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JP2006248518 | 2006-09-13 | ||
JP2006248518 | 2006-09-13 | ||
PCT/JP2007/067754 WO2008032745A1 (en) | 2006-09-13 | 2007-09-12 | Magnetoresistive element manufacturing method, and multi-chamber apparatus for manufacturing the magnetoresistive element |
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JP2009176989A Division JP2009302550A (ja) | 2006-09-13 | 2009-07-29 | 磁気抵抗効果素子の製造装置 |
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JP4354519B2 true JP4354519B2 (ja) | 2009-10-28 |
JPWO2008032745A1 JPWO2008032745A1 (ja) | 2010-01-28 |
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JP2009176989A Withdrawn JP2009302550A (ja) | 2006-09-13 | 2009-07-29 | 磁気抵抗効果素子の製造装置 |
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Country Status (6)
Country | Link |
---|---|
US (1) | US8119018B2 (ja) |
EP (1) | EP2073286A4 (ja) |
JP (2) | JP4354519B2 (ja) |
CN (1) | CN101517768B (ja) |
RU (1) | RU2390883C1 (ja) |
WO (1) | WO2008032745A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016143594A1 (ja) * | 2015-03-12 | 2016-09-15 | 東京エレクトロン株式会社 | 磁性層をエッチングする方法 |
KR101786776B1 (ko) | 2016-01-04 | 2017-10-18 | 가부시키가이샤 히다치 하이테크놀로지즈 | 자기 저항 소자의 제조 방법 및 진공 처리 장치 |
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JP4468469B2 (ja) * | 2008-07-25 | 2010-05-26 | 株式会社東芝 | 磁気記録媒体の製造方法 |
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KR20110040894A (ko) * | 2008-09-09 | 2011-04-20 | 캐논 아네르바 가부시키가이샤 | 자기 저항 소자의 제조 방법, 그 제조 방법에 이용되는 기억 매체 |
JP5039007B2 (ja) | 2008-09-26 | 2012-10-03 | 株式会社東芝 | 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置 |
JP5039006B2 (ja) | 2008-09-26 | 2012-10-03 | 株式会社東芝 | 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置 |
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RU2390883C1 (ru) | 2010-05-27 |
EP2073286A4 (en) | 2014-06-11 |
EP2073286A1 (en) | 2009-06-24 |
JP2009302550A (ja) | 2009-12-24 |
JPWO2008032745A1 (ja) | 2010-01-28 |
US8119018B2 (en) | 2012-02-21 |
US20090314740A1 (en) | 2009-12-24 |
CN101517768B (zh) | 2010-12-22 |
CN101517768A (zh) | 2009-08-26 |
WO2008032745A1 (en) | 2008-03-20 |
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