JP7318565B2 - 反射型マスクブランクの製造方法 - Google Patents
反射型マスクブランクの製造方法 Download PDFInfo
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- JP7318565B2 JP7318565B2 JP2020035517A JP2020035517A JP7318565B2 JP 7318565 B2 JP7318565 B2 JP 7318565B2 JP 2020035517 A JP2020035517 A JP 2020035517A JP 2020035517 A JP2020035517 A JP 2020035517A JP 7318565 B2 JP7318565 B2 JP 7318565B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 238000004544 sputter deposition Methods 0.000 claims description 81
- 239000006096 absorbing agent Substances 0.000 claims description 53
- 239000000758 substrate Substances 0.000 claims description 50
- 230000015572 biosynthetic process Effects 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 16
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims description 7
- 230000003746 surface roughness Effects 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 137
- 239000007789 gas Substances 0.000 description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 23
- 229910052710 silicon Inorganic materials 0.000 description 23
- 239000010703 silicon Substances 0.000 description 23
- 239000000463 material Substances 0.000 description 20
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 19
- 229910052750 molybdenum Inorganic materials 0.000 description 18
- 239000011733 molybdenum Substances 0.000 description 18
- 239000011651 chromium Substances 0.000 description 16
- 230000001681 protective effect Effects 0.000 description 13
- 230000010363 phase shift Effects 0.000 description 12
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 9
- 229910052804 chromium Inorganic materials 0.000 description 9
- 229910052715 tantalum Inorganic materials 0.000 description 9
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000007689 inspection Methods 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052707 ruthenium Inorganic materials 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 150000001845 chromium compounds Chemical class 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000001659 ion-beam spectroscopy Methods 0.000 description 3
- 239000005078 molybdenum compound Substances 0.000 description 3
- 150000002752 molybdenum compounds Chemical class 0.000 description 3
- 150000003377 silicon compounds Chemical class 0.000 description 3
- 150000003482 tantalum compounds Chemical class 0.000 description 3
- ITWBWJFEJCHKSN-UHFFFAOYSA-N 1,4,7-triazonane Chemical compound C1CNCCNCCN1 ITWBWJFEJCHKSN-UHFFFAOYSA-N 0.000 description 2
- 229910000929 Ru alloy Inorganic materials 0.000 description 2
- 229910003071 TaON Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- ISQINHMJILFLAQ-UHFFFAOYSA-N argon hydrofluoride Chemical compound F.[Ar] ISQINHMJILFLAQ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0042—Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- C23C14/3485—Sputtering using pulsed power to the target
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3492—Variation of parameters during sputtering
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- C23C14/505—Substrate holders for rotation of the substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
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- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
- G21K1/062—Devices having a multilayer structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
Description
1.基板と、該基板の一の主表面上に形成された多層反射膜及び該多層反射膜上に形成された吸収体膜とを備え、上記多層反射膜が、互いに光学特性が異なる第1の層及び第2の層が交互に各々2層以上積層されてなる反射型マスクブランクを製造する方法であって、
上記多層反射膜を構成する第1の層及び第2の層を交互にスパッタ法により形成する工程を含み、
上記多層反射膜を構成する第1の層及び第2の層の形成において、各々の層の形成を、形成開始時から所定の厚さに到達するまでの第1段階と、上記所定の厚さに到達した後から形成終了時までの第2段階とで構成し、
第1の層の形成後の第2の層の形成、又は第2の層の形成後の第1の層の形成において、
第1段階のスパッタ圧力を0.08Pa以上、第2段階のスパッタ圧力を0.08Pa未満とし、かつ第1段階のスパッタ圧力を、直前の層の形成終了時のスパッタ圧力より高く、かつ第2段階のスパッタ圧力より高くすることを特徴とする反射型マスクブランクの製造方法。
2.上記工程において、第1の層を構成する金属又は半金属のターゲットと、第2の層を構成する金属又は半金属のターゲットとを基板の主表面とを対向させ、基板の主表面と対向している上記第1の層を構成する金属又は半金属のターゲット及び上記第2の層を構成する金属又は半金属のターゲットに交互に電力を印加した状態で、上記第1の層の形成後の第2の層の形成、又は上記第2の層の形成後の第1の層の形成において、第1段階のスパッタ圧力を、直前の層の形成終了時のスパッタ圧力より高く、かつ第2段階のスパッタ圧力より高くすることを特徴とする1記載の製造方法。
3.上記第1段階において形成される上記所定の厚さが、第1段階及び第2段階の全体で形成される厚さの1/20以上1/2未満であることを特徴とする1又は2記載の製造方法。
4.上記スパッタ法がマグネトロンスパッタ法であることを特徴とする1乃至3のいずれかに記載の製造方法。
5.上記第1段階及び第2段階のスパッタ圧力を、Arガスで調整することを特徴とする1乃至4のいずれかに記載の製造方法。
6.上記第1の層及び第2の層が、各々、Si層及びMo層であり、上記第1の層及び第2の層が交互に各々40層以上積層されていることを特徴とする1乃至5のいずれかに記載の製造方法。
7.上記多層反射膜の波長13~14nmの極端紫外線(EUV)に対する入射角6°での反射率が66.5%以上であることを特徴とする1乃至6のいずれかに記載の製造方法。
8.上記多層反射膜が形成されている上記基板の主表面の表面粗さRMSが0.15nm以下であることを特徴とする1乃至7のいずれかに記載の製造方法。
本発明の反射型マスクブランクは、基板と、基板の一の主表面(表側の面)上に形成された多層反射膜、具体的には、極端紫外(EUV)光などの露光光を反射する多層反射膜と、多層反射膜上に形成された吸収体膜、具体的には、EUV光などの露光光を吸収し、反射率を低下させる吸収体膜とを備える。反射型マスクブランク(EUV用反射型マスクブランク)からは、吸収体膜をパターニングして形成される吸収体パターン(吸収体膜のパターン)を有する反射型マスク(EUV用反射型マスク)が製造される。EUVリソグラフィに用いられるEUV光の波長は13~14nmであり、通常、波長が13.5nm程度の光である。
152mm角、6.35mm厚の石英ガラス基板に、MoターゲットとSiターゲットを用い、両ターゲットと基板の主表面とを対向させ、基板を自転させながら、DCパルスマグネトロンスパッタリングにより、多層反射膜を成膜した。
152mm角、6.35mm厚の石英ガラス基板に、MoターゲットとSiターゲットを用い、両ターゲットと基板の主表面とを対向させ、基板を自転させながら、DCパルスマグネトロンスパッタリングにより、多層反射膜を成膜した。
152mm角、6.35mm厚の石英ガラス基板に、MoターゲットとSiターゲットを用い、両ターゲットと基板の主表面とを対向させ、基板を自転させながら、DCパルスマグネトロンスパッタリングにより、多層反射膜を成膜した。
101 基板
102 多層反射膜
103 吸収体膜
104 保護膜
105 導電膜
Claims (8)
- 基板と、該基板の一の主表面上に形成された多層反射膜及び該多層反射膜上に形成された吸収体膜とを備え、上記多層反射膜が、互いに光学特性が異なる第1の層及び第2の層が交互に各々2層以上積層されてなる反射型マスクブランクを製造する方法であって、
上記多層反射膜を構成する第1の層及び第2の層を交互にスパッタ法により形成する工程を含み、
上記多層反射膜を構成する第1の層及び第2の層の形成において、各々の層の形成を、形成開始時から所定の厚さに到達するまでの第1段階と、上記所定の厚さに到達した後から形成終了時までの第2段階とで構成し、
第1の層の形成後の第2の層の形成、又は第2の層の形成後の第1の層の形成において、
第1段階のスパッタ圧力を0.08Pa以上、第2段階のスパッタ圧力を0.08Pa未満とし、かつ第1段階のスパッタ圧力を、直前の層の形成終了時のスパッタ圧力より高く、かつ第2段階のスパッタ圧力より高くすることを特徴とする反射型マスクブランクの製造方法。 - 上記工程において、第1の層を構成する金属又は半金属のターゲットと、第2の層を構成する金属又は半金属のターゲットとを基板の主表面とを対向させ、基板の主表面と対向している上記第1の層を構成する金属又は半金属のターゲット及び上記第2の層を構成する金属又は半金属のターゲットに交互に電力を印加した状態で、上記第1の層の形成後の第2の層の形成、又は上記第2の層の形成後の第1の層の形成において、第1段階のスパッタ圧力を、直前の層の形成終了時のスパッタ圧力より高く、かつ第2段階のスパッタ圧力より高くすることを特徴とする請求項1記載の製造方法。
- 上記第1段階において形成される上記所定の厚さが、第1段階及び第2段階の全体で形成される厚さの1/20以上1/2未満であることを特徴とする請求項1又は2記載の製造方法。
- 上記スパッタ法がマグネトロンスパッタ法であることを特徴とする請求項1乃至3のいずれか1項記載の製造方法。
- 上記第1段階及び第2段階のスパッタ圧力を、Arガスで調整することを特徴とする請求項1乃至4のいずれか1項記載の製造方法。
- 上記第1の層及び第2の層が、各々、Si層及びMo層であり、上記第1の層及び第2の層が交互に各々40層以上積層されていることを特徴とする請求項1乃至5のいずれか1項記載の製造方法。
- 上記多層反射膜の波長13~14nmの極端紫外線(EUV)に対する入射角6°での反射率が66.5%以上であることを特徴とする請求項1乃至6のいずれか1項記載の製造方法。
- 上記多層反射膜が形成されている上記基板の主表面の表面粗さRMSが0.15nm以下であることを特徴とする請求項1乃至7のいずれか1項記載の製造方法。
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