CN207690763U - 氧气相容等离子体源 - Google Patents

氧气相容等离子体源 Download PDF

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CN207690763U
CN207690763U CN201721184716.7U CN201721184716U CN207690763U CN 207690763 U CN207690763 U CN 207690763U CN 201721184716 U CN201721184716 U CN 201721184716U CN 207690763 U CN207690763 U CN 207690763U
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D·卢博米尔斯基
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Abstract

公开了一种氧气相容等离子体源。描述的处理腔室可以包括腔室外壳，所述腔室外壳至少部分地界定半导体处理腔室的内部区域。腔室外壳可以包括盖。腔室可以包括被配置成在腔室的处理区域内支撑基板的台座。腔室也可以包括与电源耦接的第一喷淋头。第一喷淋头可以定位于盖与处理区域之间的半导体处理腔室内。腔室也可包括第一电介质面板，所述第一电介质面板定位于第一喷淋头与处理区域之间的半导体处理腔室内。腔室可以包括第二喷淋头，所述第二喷淋头与电气接地耦接并且定位于第一电介质面板与处理区域之间的半导体处理腔室内。腔室可以进一步包括第二电介质面板，所述第二电介质面板定位于第一电介质面板与第二喷淋头之间的半导体处理腔室内。

Description

氧气相容等离子体源
相关申请的交叉引用
本申请主张在2016年10月4日申请的美国专利申请案第15/285,214号的权益，所述申请案的整个公开内容为了所有目的通过引用并入本文。
技术领域
本技术涉及半导体系统、工艺和设备。更具体地，本技术涉及可以在腔室内包括石英喷淋头的处理腔室。
背景技术
集成电路可以通过在基板表面上产生复杂图案化材料层的工艺而制造。在基板上产生图案化的材料需要用于去除暴露材料的受控方法。化学蚀刻用于各种目的，包括：将光刻胶中的图案转印到底层中、将层薄化，或将已存在于表面上的特征的横向尺寸薄化。通常，期望具有一种蚀刻工艺，该蚀刻工艺蚀刻一种材料快于另一材料，从而促进例如图案转印工艺。这种蚀刻工艺据称对第一材料是具有选择性的。由于材料、电路和工艺的多样性，蚀刻工艺已经发展成对于各种材料具有选择性。
蚀刻工艺使用用于蚀刻不同材料的不同前驱物。例如，一些蚀刻工艺可以在蚀刻处理过程中使用含氟前驱物，以及其他蚀刻工艺可以在蚀刻处理过程中使用含氢前驱物。这些化学剂可以具有与不同材料的不同亲和力，并且可以导致蚀刻腔室的部件或与腔室的部件相互作用。通过调整腔室部件或提供涂层，不同腔室可以使用用于蚀刻的不同前驱物。
因此，需要可用以使用不同前驱物执行不同蚀刻工艺的改良系统和方法。这些和其他需要通过本技术来解决。
实用新型内容
本技术的半导体处理系统和方法可以包括半导体处理腔室，所述半导体处理腔室包括腔室外壳，所述腔室外壳至少部分地界定半导体处理腔室的内部区域。腔室外壳可以包括盖。腔室可以包括被配置成在腔室的处理区域内支撑基板的台座。腔室也可以包括与电源耦接的第一喷淋头。第一喷淋头可以位于在盖与处理区域之间的半导体处理腔室内。腔室也可以包括第一电介质面板，所述第一电介质面板位于在第一喷淋头与处理区域之间的半导体处理腔室内。腔室可以包括第二喷淋头，所述第二喷淋头与电气接地耦接并且定位于在第一电介质面板与处理区域之间的半导体处理腔室内。腔室可以进一步包括第二电介质面板，所述第二电介质面板定位于在第一电介质面板与第二喷淋头之间的半导体处理腔室内。
在实施方式中，第一电介质面板和第二电介质面板可以是石英或包括石英。在示例性腔室中，电介质间隔物可以定位于第一电介质面板与第二电介质面板之间。电介质间隔物可以是环形间隔物或包括环形间隔物，所述环形间隔物位于第一电介质面板与第二电介质面板之间并且接触第一电介质面板和第二电介质面板的每个。在一些实施方式中，第一电介质面板、第二电介质面板和间隔物可以界定半导体处理腔室内的等离子体处理区域。等离子体处理区域可以被配置成至少部分地含有在第一喷淋头与第二喷淋头之间产生的等离子体。等离子体处理区域可以被配置成大体上含有在第一电介质面板与第二电介质面板之间的等离子体。
在一些实施方式中，第一喷淋头和第二喷淋头可以是金属氧化物或包括金属氧化物。在半导体处理腔室的内部区域内的第一喷淋头与第一电介质面板之间的间距可以小于在半导体处理腔室内形成的等离子体的德拜(Debye)长度。在一些实施方式中，间距可以小于或约0.7毫米。第二电介质面板可以界定第一多个孔，以及第二喷淋头可以界定第二多个孔。在一些实施方式中，第一多个孔的每个孔可表征为直径小于第二多个孔的每个孔的直径。在一些示例性腔室中，第一多个孔的每个孔可以与第二多个孔的孔的至少部分轴向对准。第一多个孔可由至少两个孔的分组来表征，以及在一些实施方式中，每个分组的中心轴可以与第二多个孔的孔的中心轴轴向对准。在实施方式中，第一多个孔可以包括至少或约2,000个孔，以及第二多个孔可以包括少于或约1,200个孔。另外，第一多个孔可以包括至少或约5,000个孔，以及第二多个孔可以包括少于或约1,000个孔。
本技术也可以包括形成含氧等离子体的方法。方法可以包括将含氧前驱物输送到半导体处理腔室。半导体处理腔室可以包括腔室外壳，所述腔室外壳至少部分地界定半导体处理腔室的内部区域。腔室外壳可以包括盖。腔室可以包括被配置成在半导体处理腔室的处理区域内支撑基板的台座。腔室也可以包括与电源耦接的第一喷淋头。第一喷淋头可以位于在盖与处理区域之间的半导体处理腔室内。腔室可以包括第一电介质面板，所述第一电介质面板定位于在第一喷淋头与处理区域之间的半导体处理腔室内。腔室可以包括第二喷淋头，所述第二喷淋头与电气接地耦接并且定位于在第一电介质面板与处理区域之间的半导体处理腔室内。腔室也可包括第二电介质面板，所述第二电介质面板定位于在第一电介质面板和第二喷淋头之间的半导体处理腔室内。方法也可以包括在第一喷淋头与第二喷淋头之间由含氧前驱物产生电容耦合的等离子体。
在一些实施方式中，等离子体可以基本上不存在于第一喷淋头与第一电介质面板之间。在示例性方法中，产生的等离子体的等离子体流出物可以流过第二电介质面板和第二喷淋头朝向半导体处理腔室的处理区域。在一些实施方式中，大多数等离子体流出物可能不与第二喷淋头相互作用。在方法中使用的一些腔室中，第一喷淋头和第二喷淋头可以包括氧化铝。
本技术也包括半导体处理腔室。腔室可以包括腔室外壳，所述腔室外壳至少部分地界定半导体处理腔室的内部区域。在实施方式中，腔室外壳可以包括盖或盖组件。腔室可以包括被配置成在半导体处理腔室的处理区域内支撑基板的台座。腔室可以包括与电源耦接的第一喷淋头。第一喷淋头可以定位于在盖与处理区域之间的半导体处理腔室内，以及第一喷淋头可以是金属氧化物或包括金属氧化物。腔室也可以包括第一石英面板，所述第一石英面板定位于在第一喷淋头与处理区域之间的半导体处理腔室内。腔室可以包括第二喷淋头，所述第二喷淋头与电气接地耦接并且定位于在第一电介质面板与处理区域之间的半导体处理腔室内。在实施方式中，第二喷淋头可以是金属氧化物或包括金属氧化物。腔室也可包括第二石英面板，所述第二石英面板定位于在第一电介质面板与第二喷淋头之间的半导体处理腔室内。腔室可以包括电介质间隔物，所述电介质间隔物定位于第一石英面板与第二石英面板之间并且接触第一石英面板和第二石英面板的每个。
这种技术可以提供超越常规系统和技术的众多益处。例如，含氧等离子体可以产生并且可以展现超越常规系统的改进的复合特性。另外，系统可以允许使用额外插入件改进对腔室部件的保护。结合下文的描述和附图更详细地描述了这些和其他实施方式，以及其许多优势和特征。
附图说明
通过参考本说明书和附图的剩余部分可实现对所公开技术的特性和优势的进一步理解。
图1示出根据本技术的实施方式的示例性处理系统的俯视平面图。
图2示出根据本技术的实施方式的示例性处理腔室的示意横截面图。
图3示出根据所公开技术的实施方式的示例性喷淋头的仰视平面图。
图4示出根据所公开技术的实施方式的示例性面板的平面图。
图5示出根据本技术的实施方式的处理腔室的横截面图。
图6A示出根据本技术的实施方式的示例性面板的俯视平面图。
图6B示出根据本技术的实施方式的示例性喷淋头和面板的仰视平面图。
图7A示出根据本技术的实施方式的示例性面板的俯视平面图。
图7B示出根据本技术的实施方式的示例性喷淋头的仰视平面图。
图8示出根据本技术的实施方式的示例性方法的操作。
一些图被包括为示意图。应理解附图用于说明的目的，除非专门说明是按比例的，否则不应被视为按比例的。另外，作为示意图，附图被提供以协助理解，并且相比于实际描述可能不包括全部方面或信息，以及可以包括用于说明目的的额外或放大的材料。
在附图中，类似元件和/或特征可具有相同的附图标记。另外，可以通过在附图标记之后紧跟在相似部件之间区分的字母来区分相同类型的各部件。如果只在本说明书中使用第一附图标记，则描述适用于具有相同的第一附图标记的类似部件的任一者，而与字母无关。
具体实施方式
本技术包括用于半导体处理的系统和部件，所述半导体处理包括调谐的蚀刻工艺。当电容耦合的等离子体(“CCP”)在腔室中形成时，等离子体流出物可以与涉及产生或含有等离子体的腔室部件相互作用。根据在这些部件中使用的材料，材料可以有利地或有害地相互作用。例如，铝或石英腔室部件可以与含氟等离子体流出物化学相互作用。等离子体颗粒可以在材料的表面上化学复合，并且劣化或蚀刻部件本身。金属氧化物部件可能不被氟流出物化学劣化，但是含氢前驱物可以去除氧化物涂层，从而将底层材料暴露于其他腐蚀剂。
金属氧化物部件也可以导致或增大氧等离子体流出物以及含氢等离子体流出物的复合。这有时被称为具有高粘着系数或能力来导致离子在表面上复合。换句话说，石英可能具有与含氧等离子体流出物的降低的复合率，但可能不适于可劣化暴露的石英表面的含氟前驱物。一些常规技术通过尝试涂覆氧化铝或其他金属表面来处理氧气。这些技术由于多个原因可能是不足的。最初，由于与要涂覆的部件的热膨胀系数不匹配，如石英的材料可能是较差的涂层部件，这可能导致石英衬垫破裂。另外，一些部件可以包括喷淋头或面板，其可具有可能难以涂覆的图案化的孔。穿过孔而可能不均匀的涂层可允许增大含氧等离子体流出物的复合。
本技术可以通过将石英喷淋头并入具有CCP部件的腔室内来克服这些问题中的多数。石英喷淋头可以被定位来保护用以产生等离子体的导电电极，并且可以具体被配置成控制流出物的复合。例如，穿过喷淋头的孔可能相对于金属电极对准来减少与金属电极的相互作用。
尽管本公开的剩余部分将会例行地标识使用所公开技术的具体蚀刻工艺，但不难理解，系统和方法同样地适用于如可在所述腔室中发生的各种沉积和清洗工艺。因此，本技术应不被认为受限于单独与蚀刻工艺一起使用。
图1示出可以包括本技术的各方面的沉积、蚀刻、烘烤和固化腔室的处理系统100的一个实施方式的俯视平面图。在图1中所示的处理工具100可以含有多个处理腔室 114A-D、传送腔室110、检修腔室116、集成计量腔室117和一对负载锁定腔室106A-B。处理腔室可以包括类似于关于图2描述的那些的结构或部件，以及额外处理腔室。
为将基板在腔室之间传送，传送腔室110可以含有机器人传送机构113。传送机构113可以具有分别地附接到可伸长桥臂113B的远端的一对基板传送叶片113A。叶片 113A可以用于将各个基板传送进出处理腔室。在操作过程中，诸如传送机构113的叶片113A的基板传送叶片的一个可以从诸如腔室106A-B的负载锁定腔室的一个收取基板 W，以及将基板W传送到第一处理阶段，例如以下在腔室114A-D中描述的蚀刻处理。如果腔室被占用，机器人可以等待直到完成处理，以及随后将处理的基板从具有一个叶片113A的腔室去除，并且可以使用第二叶片(未示出)将新的基板插入。一旦基板被处理，它随后就可以被移到第二处理阶段。对于每次移动，传送机构113通常可以具有携带基板的一个叶片和用于执行基板交换的一个空的叶片。传送机构113可以在每个腔室处等待直到可完成交换为止。
一旦处理在处理腔室内完成，传送机构113可以将基板W从最后的处理腔室移走并且将基板W传送到负载锁定腔室106A-B内的盒。从负载锁定腔室106A-B，基板可以移动至工厂接口104中。工厂接口104通常可以操作以将基板在大气压清洁环境中的箱装载机105A-D与负载锁定腔室106A-B之间传递。例如，工厂界面104中的清洁环境可以通常通过空气过滤处理来提供，诸如HEPA过滤。工厂界面104也可以包括基板定位器/校准器(未示出)，所述基板定位器/校准器可以用于在处理之前适当地对准基板。至少一个基板机器人(诸如机器人108A-B)可以被放置在工厂界面104中以将基板在工厂界面104内的不同定位/位置之间传递并且传递到彼此连通的其他位置。机器人 108A-B可以被配置成沿外壳104内的轨道系统从工厂界面104的第一端行进到第二端。
处理系统100可以进一步包括提供控制信号的集成计量腔室117，其可以提供对要在处理腔室中执行的处理中的任一个的自适应控制。集成计量腔室117可以包括各种计量装置的任一个以测量不同膜的性质，诸如厚度、粗糙度、组分；并且计量装置可以进一步能够以自动方式表征在真空下的光栅参数，诸如临界尺寸、侧壁角度和特征高度。
现在转向图2，图2示出根据本技术的示例性处理腔室系统200的横截面视图，这可以包括贯穿本公开论述的各方面。例如，腔室200可以在先前论述的系统100的处理腔室区域114的一或多个中使用。一般来说，蚀刻腔室200可以包括用以实施离子铣削操作的第一电容耦合的等离子体源和用以实施蚀刻操作和实施可选择的沉积操作的第二电容耦合的等离子体源。如下文进一步解释，腔室可以另外包括被配置用于包括含氧前驱物的等离子体的部件。腔室200可以包括围绕卡盘250的接地腔室壁240。在实施方式中，卡盘250可以为静电卡盘，所述静电卡盘在处理过程中将基板202夹紧到卡盘 250的顶表面上，但是也可以使用其他如将已知的夹紧机构。卡盘250可以包括嵌入的热交换器线圈217。在示例性实施方式中，热交换器线圈217包括一或多个热传送流体通道，诸如乙二醇/水混合物的热传送流体可以传递通过所述热传送流体通道以控制卡盘 250的温度并且最终控制基板202的温度。
卡盘250可以包括耦接到高压DC电源248的网眼249，以便网眼249可以传送直流偏压电位来实施基板202的静电夹紧。卡盘250可以与第一RF电源耦接，并且在一个所述实施方式中，网眼249可以与第一RF电源耦接，以便DC电压偏移和RF电压电位两者跨卡盘250的表面上的薄电介质层耦接。在说明性实施方式中，第一RF电源可以包括第一和第二RF发生器252、253。RF发生器252、253可以以任意工业上利用的频率来操作，然而在示例性实施方式中，RF发生器252可以在60MHz的频率下操作来提供有利的方向性。在也提供第二RF发生器253的情况下，示例性频率可以为2MHz。
在要对卡盘250RF供电的情况下，RF返回途径可以由第一喷淋头225来提供，所述第一喷淋头可以包括双通道喷淋头。第一喷淋头225可以设置在卡盘上方，以将第一进料气体分配到由第一喷淋头225和腔室壁240界定的第一腔室区域284中。因而，卡盘250和第一喷淋头225形成第一RF耦合的电极对以电容激励在第一腔室区域284内的第一进料气体的第一等离子体270。由RF供电的卡盘的电容耦合产生的DC等离子体偏压或RF偏压可以产生从第一等离子体270到基板202的离子流(例如，第一进料气体为Ar的Ar离子)，以提供离子铣削等离子体。第一喷淋头225可以接地或者与RF 源228耦接，所述RF源228具有在除了卡盘250的频率以外的频率下(例如，13.56MHz 或60MHz)操作的一或多个发生器。在图示的实施方式中，第一喷淋头225可以通过继电器227选择性地接地或耦接到RF源228，继电器227可以在蚀刻处理过程中例如通过控制器(未示出)自动地控制。在公开的实施方式中，腔室200可以不包括喷淋头 225或电介质间隔物220，并且可以改为仅包括下文进一步描述的挡板215和喷淋头210。
如在图中进一步所示，蚀刻腔室200可以包括能够在低处理压力下具有高吞吐量的泵堆叠。在实施方式中，至少一个涡轮分子泵265、266可以通过一或多个闸阀260与第一腔室区域284耦接并且设置在卡盘250下方、与第一喷淋头225相对。涡轮分子泵 265、266可以是具有合适吞吐量的任何市售的泵，并且更确切地可以适当地调整尺寸，以在第一进料气体的所要流速下将处理压力维持在低于或约10mTorr或低于或约5 mTorr，例如其中氩气为第一进料气体的50至500sccm的Ar。在所示的实施方式中，卡盘250可以形成位于两个涡轮泵265与266之间的中心的台座的部分，然而在交替配置中，卡盘250可以在从腔室壁240悬挂的台座上，所述腔室壁240具有与卡盘250的中心对准的单个涡轮分子泵。
设置在第一喷淋头225上方的可以是第二喷淋头210。在一个实施方式中，在处理过程中，从气体分配系统290释放的第一进料气源(例如，氩气)可以与进气口276耦接，并且第一进料气体流过延伸穿过第二喷淋头210的多个孔280、进入第二腔室区域 281，以及流过延伸穿过第一喷淋头225的多个孔282而进入第一腔室区域284。具有孔 278的附加流量分配器或挡板215可以进一步穿过分布区218跨蚀刻腔室200的直径分配第一进料气体流216。在替换实施方式中，第一进料气体可以经由孔283直接地流进第一腔室区域284，所述孔283与由短划线223表示的第二腔室区域281绝缘。
腔室200可以另外从所示的状态重新配置以执行蚀刻操作。次级电极205可以设置在第一喷淋头225上方，在其之间具有第二腔室区域281。次级电极205可以进一步形成蚀刻腔室200的盖或顶板。次级电极205和第一喷淋头225可以通过电介质环220电隔离，并且形成第二RF耦合的电极对以将第二进料气体的第二等离子体292在第二腔室区域281中电容放电。有利地，第二等离子体292可以不在卡盘250上提供显著的 RF偏压电位。第二RF耦合电极对的至少一个电极可以与RF源耦接以激励蚀刻等离子体。次级电极205可以与第二喷淋头210电耦接。在示例性实施方式中，第一喷淋头225 可以与接地平面耦接或浮置，以及可以通过继电器227耦接到地，从而允许第一喷淋头 225在离子铣削式操作过程中也由RF电源228来供电。在第一喷淋头225接地的情况下，具有在13.56MHz或60MHz下操作的一或多个RF发生器的RF电源208可以通过继电器207来与次级电极205耦接，所述继电器207可以允许次级电极205在其他操作模式中(诸如在离子铣削操作中)同样接地，但是如果对第一喷淋头225供电，那么第二电极205也可保持浮置。
诸如三氟化氮的第二进料气源和诸如氨气的氢源可以从气体分配系统290释放，并且诸如经由短划线224与进气口276耦接。在此模式中，第二进料气体可以流过第二喷淋头210并且可以在第二腔室区域281中被激励。随后，活性物质可以传递进入第一腔室区域284中以与基板202反应。如进一步所示，对于第一喷淋头225为多通道喷淋头的实施方式中，可提供一或多种进料气体以与由第二等离子体292产生的活性物种反应。在一个所述实施方式中，水源可以与多个孔283耦接。附加配置也可以基于所提供的一般说明，但是其中重新配置不同部件。例如，流量分配器或挡板215可以是类似于第二喷淋头210的板，并且可以定位在第二电极205与第二喷淋头210之间。
因为这些板的任一个可以在用于产生等离子体的不同配置中作为电极操作，所以一或多个环形或其他形状的间隔物可以位于类似于电介质环220的这些部件的一或多个之间。第二喷淋头210也可以在实施方式中作为离子抑制板操作，并且可以被配置成通过第二喷淋头210减少、限制或抑制离子物种的流动，同时仍然允许中性和自由基物种的流动。一或多个附加喷淋头或分配器可以被包括在第一喷淋头225和卡盘250之间的腔室中。这种喷淋头可以采取上述的任何分配板或结构的形状或结构。同时，在实施方式中，远程等离子体单元(未示出)可以与进气口耦接以向腔室提供等离子体流出物以用于不同处理。
在实施方式中，卡盘250可以在垂直于第一喷淋头225的方向中沿距离H2移动。卡盘250可以在由波纹管255或类似物围绕的致动机构上，以允许卡盘250向第一喷淋头225移动更近或更远，以作为控制在卡盘250与第一喷淋头225之间的热传递的方法，这可以在80℃–150℃的高温下或更高温度下进行。因而，蚀刻处理可以通过将卡盘250 相对于第一喷淋头225在第一和第二预定位置之间移动来实施。或者，卡盘250可以包括升降机构251来将基板202从卡盘250的顶表面提升距离H1，以在蚀刻处理过程中通过第二喷淋头225来控制加热。在其他实施方式中，在蚀刻处理在诸如约90-110℃的固定温度下执行的情况下，可以避免卡盘位移机构。系统控制器(未示出)可以通过自动地交替对第一和第二RF耦合电极对供电来在蚀刻处理过程中交替地激励第一和第二等离子体270和292。
腔室200也可以被重新配置成执行沉积操作。等离子体292可以通过RF放电在第二腔室区域281中产生，所述RF放电可以以针对第二等离子体292描述的任一种方式来实施。在对第一喷淋头225供电以在沉积过程中产生等离子体292的情况下，第一喷淋头225可以通过电介质间隔物230而与接地的腔室壁240隔离，以便相对于腔室壁电浮置。在示例性实施方式中，诸如分子氧的氧化剂进料气源可以从气体分配系统290释放，并且与进气口276耦接。在其中第一喷淋头225为多通道喷淋头的实施方式中，诸如OMCTS的任意含硅前驱物可以从气体分配系统290传递，并且被引导至第一腔室区域284中以与来自等离子体292的穿过第一喷淋头225的活性物种反应。或者，含硅前驱物也可以伴随着氧化剂流过进气口276。腔室200被包括为可以用于参考本技术论述的不同操作的通用腔室配置。
图3为根据实施方式的与处理腔室一起使用的喷淋头325的仰视图。喷淋头325可以与在图2中示出的喷淋头225对应。通孔365(其可以是第一流体通道或孔282的视图)可以具有多个形状和配置以控制和影响前驱物穿过喷淋头225的流动。小孔375(其可以是第二流体通道或孔283的视图)可以在喷淋头的表面上方、甚至在通孔365中间大体上平均地分布，并且可以当前驱物离开喷淋头时提供比其他配置更均匀混合的前驱物。
在图4中示出根据实施方式的面板的布置。如图示出，面板400可以包括多孔板或歧管。面板的组件可以类似于在图3中示出的喷淋头，或者可以包括特定地被配置成用于前驱物气体的分布图案的设计。面板400可以包括定位于示例性处理腔室内的各种布置中的环形框架410，诸如在图2中示出的腔室。板420可以耦接在框架上或框架内，这可以在实施方式中类似于如下描述的离子抑制板523。在实施方式中，面板400可以是单件式设计，其中框架410和板420是单件材料。
板可以具有圆盘形状，并且位于框架410上或框架410内。板可以是诸如包括铝的金属的导电材料，以及允许板用作电极在如上所述的等离子体布置中使用的其他导电材料。板可以具有各种厚度，并且可以包括在板内界定的多个孔465。在图4中示出的示例性布置可以包括如上文参照在图3中的布置描述的图案，并且可以包括在几何图案(诸如如图所示的六边形)中的孔的一系列环。应理解，所示的图案是示例性的，并且应理解，不同图案、孔布置和孔间距包含在设计中。
孔465可以经尺寸设定成或者以其他方式被配置成允许流体在操作过程中流过孔。孔在不同实施方式中可以经尺寸设定成小于约2英寸，并且可以低于或约1.5英寸、约 1英寸、约0.9英寸、约0.8英寸、约0.75英寸、约0.7英寸、约0.65英寸、约0.6英寸、约0.55英寸、约0.5英寸、约0.45英寸、约0.4英寸、约0.35英寸、约0.3英寸、约0.25 英寸、约0.2英寸、约0.15英寸、约0.1英寸、约0.05英寸、约0.04英寸、约0.035英寸、约0.03英寸、约0.025英寸、约0.02英寸、约0.015英寸、约0.01英寸等或更小。
在一些实施方式中，面板400可以作为离子抑制器操作，所述离子抑制器界定贯穿结构的多个孔，其被配置成抑制带电离子物种移出腔室等离子体区域，同时允许不带电的中性或自由基物种穿过离子抑制器至在离子抑制器的下游的活性气体输送区域中。在实施方式中，离子抑制器可以是具有不同孔配置的多孔板。这些不带电物种可以包括与较少的反应载气一起传送通过孔的高度活性物种。如上文说明，离子物种穿过孔洞的迁移可以被减少，并且在一些情况下完全地被抑制。例如，孔洞的长宽比、或者孔径对长度、和/或孔洞的几何形状可被控制，以使得穿过离子抑制器的活性气体中的带电离子物种流减少。
转向图5，图5示出根据本技术的处理腔室500的简明示意图。腔室500可以包括如上文关于图2至图4论述的部件的任一个，并且可以被配置成在腔室的处理区域560 中容纳半导体基板555。腔室外壳503可以至少部分地界定腔室的内部区域。例如，腔室外壳503可以包括盖502，并且可以至少部分地包括在图中示出的其他板或部件中的任一个。例如，腔室部件可以被包括为一系列堆叠部件，其中每个部件至少部分地界定腔室外壳503的部分。基板555可以定位于如图所示的台座565上。处理腔室500可以包括与入口501耦接的远程等离子体单元(未示出)。在其他实施方式中，系统可能不包括远程等离子体单元，并且可以被配置成直接通过入口501接收前驱物，其可以包括用于将分布到腔室500的一或多个前驱物的入口组件。
在具有或不具有远程等离子体单元的情况下，系统可以被配置成通过入口501接收前驱物或其他流体，其可以提供到处理腔室的混合区511的通路。混合区511可以与腔室的处理区域560分隔，并且与腔室的处理区域560流动耦接。混合区511可以由系统 500的腔室的顶部(诸如腔室盖502或盖组件)至少部分地界定，其可以包括用于一或多个前驱物的入口组件，和诸如下方的喷淋头或面板509的分配装置。面板509可以在公开的实施方式中类似于在图4中所示的喷淋头或面板。面板509可以包括多个通道或孔507，所述多个通道或孔507可以被定位和/或定型以在前驱物穿过腔室进行之前影响前驱物在混合区511中的分布和/或停留时间。
例如，复合可以通过调整跨面板509的孔的数目、孔的大小或孔的配置来影响或控制。如图所示，面板509可以定位于腔室的混合区511与处理区域560之间，以及面板 509可以被配置成分布穿过腔室500的一或多个前驱物。系统500的腔室可以包括一系列部件的一或多个，其可以选择性地被包括在公开的实施方式中。例如，尽管描述了面板509，在一些实施方式中腔室可以不包括这种面板。另外，在公开的实施方式中，至少部分地混合在混合区511中的前驱物可以经由系统的工作压力、腔室部件的布置或前驱物的流量分布的一或多个而被引导穿过腔室。
腔室500可以另外包括第一喷淋头515。喷淋头515可以具有关于图3至图4论述的板的特征或特性的任一个。喷淋头515可以定位于如图所示的半导体处理腔室内，并且可以被包括在或定位于盖502与处理区域560之间。在实施方式中，喷淋头515可以是金属的或导电的部件或者包括金属的或导电的部件，所述部件可以是已涂覆、调理(season)或以其他方式处理的材料。示例性材料可以包括金属(包括铝)以及金属氧化物(包括氧化铝)。根据正在使用的前驱物或正在腔室内执行的处理，喷淋头可以是可提供结构稳定性以及可利用的导电性的任意其他金属。
喷淋头515可以界定一或多个孔517以促进穿过喷淋头的前驱物均匀分布。孔517可以被包括在各种配置或图案中，并且可以由如可能需要的可提供前驱物分布的任何数目的几何形状来表征。在实施方式中，喷淋头515可以与电源电耦接。例如，喷淋头515 可以与如图所示的RF源519耦接。当操作时，RF源519可以向喷淋头515提供电流，以允许电容耦合的等离子体(“CCP”)在喷淋头515与另一部件之间形成。
腔室500也可以包括电介质面板521。电介质面板521可以具有上文关于图3至图 4论述的板的特征或特性的任一个。电介质面板521可以定位于在喷淋头515与处理区域560之间的腔室500内。电介质面板521可以包括通过面板界定的多个孔523。另外，腔室500可以包括电介质面板525。电介质面板525可以具有上文关于图3至图4论述的板的特性或特征的任一个，并且可以与电介质面板521类似或不同。电介质面板525 可以界定在面板的结构内的孔527，并且可以具有或包括与电介质面板521类似或不同图案的孔。电介质面板525可以定位于在电介质面板521与喷淋头531之间的腔室内。电介质面板的一个或两个可以是绝缘材料或包括绝缘材料。在实施方式中，电介质面板 521、525可以是石英或可能已减小与含氧等离子体流出物相互作用的任何材料，诸如相比于金属氧化物部件，对氧气复合的影响减小。
喷淋头531可以是包括在腔室内的第二喷淋头，并且可以作为具有喷淋头515的附加电极操作。喷淋头531可以包括上述的喷淋头515的特性或特征的任一个。在其实施方式中，喷淋头531的某些特征可以偏离喷淋头515。例如，在实施方式中，喷淋头531 可以与电气接地534耦接，这可以允许等离子体在喷淋头515与喷淋头531之间产生。喷淋头531可以界定结构内的孔533以允许前驱物或等离子体流出物输送到处理区域 560。
腔室500选择性地可以进一步包括在腔室内的气体分配组件535。在一些实施方式中，在喷淋头531与处理区域560之间可能没有部件，并且喷淋头531可以允许前驱物或等离子体流出物分配到处理区域560。气体分配组件535(其可以在各方面类似于如上所述的双通道喷淋头)可以位于在处理区域560上方的腔室内，诸如在处理区域560 与盖502之间，以及在处理区域560与喷淋头531之间。气体分配组件535可以被配置成将第一和第二前驱物两者输送到腔室的处理区域560中。在实施方式中，气体分配组件535可以至少部分地将腔室的内部区域划分成定位基板555的远程区域和处理区域。
尽管图5的示例性系统包括双通道喷淋头，但是应理解替换的分配组件可以被使用，其维持前驱物与通过入口501引入的物种流体地分离。例如，可以利用在板下面的多孔板和管，但是其他配置可以在减少的效率的情况下操作，或者不提供如描述的双通道喷淋头的均匀处理。通过使用所公开设计的一个设计，前驱物可以在进入处理区域560之前被引入至先前未被等离子体激发的处理区域560中，或者前驱物可以被引入以避免接触可能与其反应的额外前驱物。尽管未示出，但是附加的间隔物可以定位于喷淋头531 与气体分配组件535之间，诸如环形间隔物，以将板彼此分隔。在可不包括附加前驱物的实施方式中，气体分配组件535可以具有类似于上述部件的任一个的设计，以及可以包括类似于在图3至图4中所示的板的特性。
在实施方式中，气体分配组件535可以包括嵌入式加热器539，其可以包括例如电阻加热器或温度受控的流体。气体分配组件535可以包括上板和下板。板可以彼此耦接以界定在板之间的容积537。板的耦合可以能够提供通过上下板的第一流体通道540和通过下板的第二流体通道545。形成的通道可以被配置成提供从容积537穿过下板的流体通路，以及第一流体通道540可以流体地与在板与第二流体通道545之间的容积537 分隔。容积537可以穿过气体分配组件535的侧面流体地接入，诸如如先前论述的通道 223。通道可以与腔室中的通路耦接，所述通路与腔室500的入口501分隔。
可能或可能不包括在腔室500中的附加可选择的部件是面板547，面板547也可以是电介质，诸如石英。面板547可以提供类似功能，以及包括类似于面板521、525的特性，并且可以在如上解释的离子铣削或离子蚀刻操作中使用。面板547可以包括由面板的结构界定的孔549。面板的任一个可以具有如贯穿本申请案论述的孔特性、图案或尺寸。腔室500也可以包括腔室衬垫551，其可以例如保护腔室壁免受等离子体流出物以及材料沉积的影响。衬垫可以是导电材料或可以包括导电材料，以及在实施方式中衬垫可以是绝缘材料或包括绝缘材料。在一些实施方式中，腔室壁或衬垫可以作为附加的电气接地源操作。
间隔物529可以定位于第一电介质面板521与第二电介质面板525之间。间隔物可以是电介质，并且可以是石英或在两个部件之间提供绝缘的任何其他电介质材料。在实施方式中，间隔物529可以是定位于两个面板之间并且接触电介质面板521和电介质面板525两者的环形间隔物。
在一些实施方式中，如早先描述的等离子体可以形成于腔室区域中，所述腔室区域被界定在上述部件的两个或更多个之间。例如，诸如等离子体处理区域550的等离子体区域可以在喷淋头515与喷淋头531之间形成。间隔物529可以维持两个部件彼此电隔离，以允许形成等离子体场。喷淋头515可以是带电的，同时喷淋头531可以接地或 DC偏压以在板之间界定的区域内产生等离子体场。板可以另外被涂覆或调理，以最小化等离子体可以在其之间形成的部件的劣化。板可以另外包括可能不太可能劣化或受影响的组合物，其包括陶瓷、金属氧化物或其他导电材料。
使用诸如氧气或氢气的某些前驱物操作常规电容耦合的等离子体(“CP”)可能影响对如先前论述的等离子体复合的控制。例如，部件可以是氧化铝涂层或包括氧化铝涂层，或者可以是铝。氧化铝可以增大氧气离子和自由基接触后的复合，其可能导致等离子体流出物的均匀性和控制的问题，这可能影响正在工作的基板。因此，为保护等离子体流出物，其可以是含氧流出物或含氢流出物，例如，石英板521、525可以被包括在等离子体处理区域550中。在其他实施方式中，板521、525可以是除了石英以外的材料或包括除了石英以外的材料，所述材料包括诸如可以展现低导电率的陶瓷或非金属材料的其他电介质材料。
等离子体处理区域550可以被部分地界定在第一喷淋头515与第二喷淋头531之间。另外，第一电介质面板521、第二电介质面板525(两者可以是石英)和间隔物529可以界定半导体处理腔室内的等离子体处理区域550。这些部件可以至少部分地被配置成至少部分地含有在第一喷淋头515与第二喷淋头531之间产生的等离子体。在一些实施方式中，这些部件可以被间隔、定位或被配置成大体上含有在第一电介质面板521与第二电介质面板525之间的等离子体。
相对于第一电介质面板521和第二电介质面板525，在第一喷淋头515与第二喷淋头531的每个之间的间距可以影响等离子体处理区域550的范围。例如，等离子体可以能够在产生等离子体的电极(诸如喷淋头515和喷淋头531)之间的整个间距中产生。如果这在实施方式中发生，则含氧前驱物可以在第一喷淋头515与第一电介质面板521 之间离子化。离子或自由基可以随后接触喷淋头515，并且开始在比维持在石英部件之间的速率更高的速率下复合。类似的现象可以在第二喷淋头531与第二电介质面板525 之间发生。然而，第一电介质面板521和第二电介质面板525可以被定位以调整等离子体处理区域，以在电极、或喷淋头515和喷淋头531的表面处减少、阻止或大体上阻止等离子体产生。
例如，根据包括诸如温度、压力和产生频率的工作条件的某些特性，等离子体可以在具有大于德拜长度的长度的区域中产生，在所述区域中等离子体可以保持平均电中性或准中性。在具有少于德拜长度的距离的区域中，这可能达不到，并且等离子体可能不冲击。因此，通过维持少于德拜长度的第一喷淋头515与第一电介质间隔物521之间的距离，等离子体可以不在部件之间形成。类似地，第二喷淋头531与第二电介质面板525 之间的距离也可以被维持在德拜长度以下，以限制等离子体在此区域内产生。因此，在实施方式中，两个距离可以被维持在德拜长度以下，并且等离子体可以大体上或基本上包含在第一电介质面板521与第二电介质面板525之间界定的区域内。
在含氧等离子体正在等离子体处理区域550内产生的一些实施方式中，例如根据工作压力和频率，德拜长度可以小于或约25毫米。所述长度可以在半导体处理腔室的内部区域内的两个板上的轴向取向位置之间。例如，板可以在板的外部边缘处彼此接触，但是可以维持跨处理腔室的内部区域的距离。在实施方式中，喷淋头515、531与它们的各自的石英面板521、525之间的距离可以被维持在低于或约25毫米。在其他实施方式中，距离可以被维持在低于或约20毫米、低于或约15毫米、低于或约12毫米、低于或约10毫米、低于或约8毫米、低于或约6毫米、低于或约5毫米、低于或约4毫米、低于或约3毫米、低于或约2毫米、低于或约1毫米、低于或约0.9毫米、低于或约0.8毫米、低于或约0.7毫米、低于或约0.6毫米、低于或约0.5毫米、低于或约0.4 毫米、低于或约0.3毫米、低于或约0.2毫米、低于或约0.1毫米、或大约0毫米，其中喷淋头和石英面板接触。这些部件可以被维持在所列出的这些距离的任意一个之间的距离处或在界定范围的任何较小范围内。例如，喷淋头和石英板在实施方式中可以被维持在约0毫米与约1毫米之间，或在约0.1毫米与约0.6毫米之间。
例如，喷淋头515或者喷淋头531可以不与电介质面板521或者电介质面板525直接接触。尽管石英可以在温度循环周期内展现可接受的特性，但是在石英面板与铝或氧化铝喷淋头之间的直接接触可能导致石英面板的破裂。因此，在没有间距在喷淋头515、 531与电介质面板521、525之间形成的实施方式中，材料可以被定位与喷淋头和电介质面板直接接触，这可以吸收在任一材料中的热诱导变化，或在两个部件之间提供缓冲。
在操作过程中，在可以在腔室500或类似腔室中执行的示例性处理过程中，含氧等离子体可以在电介质面板521与电介质面板525之间产生。产生的流出物可以穿过腔室 500的内部区域前往处理区域560。为了从等离子体处理区域550行进到处理区域560，可能包括含氧流出物的等离子体流出物可以不仅通过电介质面板525，而且通过喷淋头 531。因此，可以是诸如铝的导电材料、可以具有诸如氧化铝的涂层的喷淋头531可以与等离子体流出物相互作用。在实施方式中，喷淋头531和/或电介质面板525的孔或配置可以被调整以调节结构和减少氧化铝和铝对产生的等离子体流出物的影响。
转向图6A，图6A示出根据本技术的实施方式的示例性电介质面板600的俯视平面图。如图所示，面板600可以包括电介质材料610，面板600在实施方式中可以是石英。另外，在实施方式中，电介质面板可以是电介质面板521、525中的任一个。电介质面板600可以包括关于上文图3至图4论述的板的部件或特性的任一个。电介质面板600 可以包括由面板的结构界定的孔620，并且面板可以在实施方式中界定第一多个孔。被包括在面板600内的孔可以表征为如图所示的分组。在实施方式中，分组可以包括至少两个孔，以及根据在对应喷淋头中的面板的尺寸、孔的尺寸和孔的关联的因素，分组可以每分组包括至少或约3个孔、每分组至少或约4个孔、每分组至少或约5个孔、每分组至少或约6个孔、每分组至少或约7个孔、每分组至少或约8个孔、每分组至少或约 9个孔、每分组至少或约10个孔、每分组至少或约15个孔、每分组至少或约20个孔、每分组至少或约50个孔、每分组至少或约100个孔、每分组至少或约130个孔、每分组至少或约160个孔、每分组至少或约200个孔，或更多个孔。
另外，孔620的尺寸可以用以影响或控制等离子体复合。在实施方式中，每个孔620可以由大于或约0.1毫米的直径表征，以及可由大于或约0.15毫米、大于或约0.2毫米、大于或约0.25毫米、大于或约0.3毫米、大于或约0.35毫米、大于或约0.4毫米、大于或约0.45毫米、大于或约0.5毫米、大于或约0.55毫米、大于或约0.6毫米、大于或约 0.65毫米、大于或约0.7毫米、大于或约0.75毫米、大于或约0.8毫米、大于或约0.85 毫米、大于或约0.9毫米、大于或约0.95毫米、大于或约1.0毫米、大于或约1.25毫米、大于或约1.5毫米、大于或约1.75毫米、大于或约2毫米、大于或约2.5毫米或更大的直径表征。
直径旨在覆盖跨孔或垂直于孔的中心轴的宽度，例如，诸如在非圆形孔中，者由贯穿孔的高度改变的几何形状表征的孔。在实施方式中，每个孔也可由在约0.1毫米与约 1毫米之间，在约0.3毫米与约0.8毫米之间，或在约0.4毫米至约0.5毫米之间的直径表征。在实施方式中，电介质面板可由在整个面板上具有大于或约1,000个孔表征，并且每个孔可以并入特定分组内。另外，面板可以根据孔径以及分组中的板尺寸和孔布置而表征为例如大于或约2,000个孔、大于或约3,000个孔、大于或约4,000个孔、大于或约5,000个孔、大于或约6,000个孔、大于或约7,000个孔、大于或约8,000个孔、大于或约9,000个孔、大于或约10,000个孔或更多个孔。在其他实施方式中，面板600可以包括小于所列出的孔的数量或尺寸中的任一个，或者在所列出的范围的任一个内的更小范围内。
图6B示出根据本技术的实施方式的示例性喷淋头650和面板600的仰视平面图。部件可以是上述喷淋头531和电介质面板525的视图。如图所示，喷淋头650可以包括板660，板660可以是导电材料。喷淋头650可以在腔室内作为CCP布置中的接地电极操作。喷淋头650也可以界定多个孔670，多个孔670可以是第二多个孔。孔670可以大于第一孔620，孔670中的每个可以表征为直径小于第二多个孔670的每个孔的直径。
孔670可以表征为直径大于面板600的各个孔620的直径。在实施方式中，每个孔670可以根据来自面板600的喷淋头的尺寸和关联孔的数目表征为直径大于或约1毫米、大于或约2毫米、大于或约3毫米、大于或约4毫米、大于或约5毫米、大于或约6毫米、大于或约7毫米、大于或约8毫米、大于或约9毫米、大于或约10毫米、大于或约11毫米、大于或约12毫米、大于或约13毫米、大于或约15毫米、大于或约20毫米、或更大。另外，喷淋头650可以界定穿过其结构的至少约200个孔670，以及在实施方式中喷淋头650可以根据孔的尺寸以及孔通过其界定的板界定至少约300个孔、至少约400个孔、至少约500个孔、至少约600个孔、至少约700个孔、至少约800个孔、至少约900个孔、至少约1,000个孔、至少约1,100个孔、至少约1,200个孔、至少约 1,300个孔、至少约1,500个孔、至少约2,000个孔或更多个孔。在其他实施方式中，喷淋头650可以包括小于所列出的孔的数量或尺寸中的任一个，或者在所列出的范围的任一个内的更小范围。
孔670可以被配置在相对其中可以配置第一多个孔620的图案的图案中。例如，第一多个孔620的每个孔可以与第二多个孔670的孔的至少一部分轴向对准。在实例中，第一多个孔620的孔可以与第二多个孔670的孔对准或围绕第二多个孔670的孔，以便第一多个孔620的孔的至少部分朝由第二多个孔670的孔界定的空间延伸或覆盖所述空间。另外，在所述第一多个孔620并入分组的实施方式中，第一多个孔620的每个分组的中心轴可以与第二多个孔670的孔的中心轴轴向对准。例如，如在图中示出，每个孔 670可以与孔620的分组的中心轴对准。
在实施方式中，每个孔670可以与第一多个孔620中的至少约3个孔的分组对准。另外，例如，根据孔620的尺寸、孔670的尺寸以及喷淋头和面板尺寸，每个孔670可以与第一多个孔620中的至少约4个孔、至少约5个孔、至少约6个孔、至少约7个孔、至少约8个孔、至少约9个孔、至少约10个孔、至少约11个孔、至少约12个孔、至少约13个孔、至少约14个孔、至少约15个孔、至少约20个孔、至少约50个孔、至少约75个孔、至少约100个孔、至少约125个孔、至少约150个孔、至少约175个孔、至少约200个孔、或更多个孔的分组对准。尽管如一个喷淋头和面板对论述，应理解，组合可以是如先前论述的喷淋头515、531和电介质面板521、525的一者或两者。另外，第一喷淋头/面板组合可以表征为第一孔配置，同时第二喷淋头/面板组合可以表征为第二孔配置。
在许多CCP电极流通配置中，其中前驱物可以穿过至少一个电极以与基板相互作用，诸如喷淋头531的电极的孔径大小调整例如可以影响操作。例如，当孔径尺寸增大，等离子体泄漏可能发生，并且控制正产生的等离子体或流出物可能变得更加困难。另外，等离子体颗粒可以通过喷淋头泄漏并且与基板相互作用，这可以导致溅射或其他损害。因此，许多常规CCP系统可以限于小于几毫米或小于毫米的孔径。然而，本系统可以利用诸如石英面板的面板，以通过在面板中使用更小孔洞来控制等离子体。以这种方法，喷淋头内的孔可以增大以超过对于常规系统可能发生的限制，并且可以减少与等离子体流出物的相互作用。另外，不管增大的孔径尺寸，喷淋头仍然可作为可以形成等离子体的电极而可接受地操作。
转向图7A，图7A示出根据本技术的实施方式的示例性面板700的俯视平面图。面板700可以包括或表征为先前论述的任意面板的特征或特性中的任一个。面板700可包括已界定孔720的电介质材料710。孔720可以是或包括先前论述的尺寸或分组特性的任一个。另外示出了面板700可以与其耦接的喷淋头的示例性孔730。这种配置可以类似例如电介质面板525和喷淋头531的俯视图，但也可以示出与电介质面板521和喷淋头515相容的特性。孔730示为隐形的，因为它们可能从面板700的任意特定孔720不可见。
例如，在实施方式中，孔720可以与诸如孔730的喷淋头孔交错，以便从任何孔720看不见任何孔730。许多可能的配置用于界定在面板700中的孔来产生这种效应是可能的。例如，孔720可以被包括在跨面板700的图案中以阻止与对应喷淋头的任意孔730 的任意取向或对准。另外，孔720可以被包括在围绕对应喷淋头的孔730的相对周边延伸的分组中。例如，如图所示，孔720被包括在围绕对应喷淋头的孔730的对应位置的约6个孔的分组中。上述分组的任一个或孔配置可以类似地被应用于此布置，并且含在本技术中。
图7B示出根据本技术的实施方式的示例性喷淋头750的仰视平面图。例如，喷淋头750可以是与面板700一起示出的具有孔730的对应喷淋头。在实施方式中，喷淋头 750可以表征为上述喷淋头的任一个的配置或特性中的任一个。如图所示，孔730可以不向面板700的任何孔提供视线，其可以具有围绕对应面板700的孔730交错的孔。尽管在实例中没有示出对应面板的孔，但是在其他实施方式中，面板的孔的任意百分比或部分可以是可见的或可看见喷淋头750的任何孔730。
上述腔室、面板和喷淋头可以在一或多个方法中使用。图8示出示例性方法800的操作，该方法可以在上述腔室中执行，诸如腔室500的一或多个版本中，或者可以在包括上述面板或喷淋头的任一个的腔室中执行。如图所示，方法可以包括在操作805处将前驱物流进腔室中。在实施方式中，例如前驱物可以是氧气或包括氧气，并且也可以包括氢气、惰性前驱物或在半导体处理中使用的一些其他前驱物。在一些实施方式中，前驱物或输送到腔室的前驱物可以是一或多个含卤素前驱物或包括一或多个含卤素前驱物，尽管在其他实施方式中，前驱物可以不含一或多个含卤素前驱物。例如，在实施方式中，前驱物可以不含含氟前驱物。然而，附加的前驱物可以经由气体分配组件535输送到腔室，诸如腔室500，这可以允许面板(其可以是石英)被保护而不受含氟前驱物或其他前驱物的影响。
在操作810，电容耦合的等离子体(“CCP”)以由输送到腔室中的前驱物(诸如氧气或含氧前驱物)产生。在实施方式中，等离子体可以在CCP的电极之间产生，电极可以为喷淋头，诸如上述的喷淋头515、531。等离子体可以含在或大体上含在石英面板之间，石英面板可以定位于用以产生CCP的电极之间。在实施方式中，电极可以是导电的喷淋头，并且例如可以是铝或氧化铝或包括铝或氧化铝。另外，等离子体可以不形成，或者可以在实施方式中在第一喷淋头与第一电介质面板之间基本上不存在，诸如喷淋头515 和电介质面板521之间。
已经形成的等离子体流出物可以在操作815从等离子体处理区域流出。流出物可以流向或朝向容纳半导体基板的处理区域。流出物可以流过腔室(诸如腔室500)的一或多个部件，并且可以流过电介质面板和/或喷淋头。在实施方式中，喷淋头可以是产生 CCP的电极，诸如接地电极。在一些实施方式中，等离子体流出物可不相互作用，或者可几乎不与电极相互作用，所述等离子体流出物可以流过所述电极。例如，诸如喷淋头 531的电极的孔可以经尺寸设定和/或被配置成限制它们与形成的等离子体流出物相互作用。在实施方式中，与在其中不包括与喷淋头配合的电介质面板的系统中(诸如在上述布置的任一个布置中)相比，电极可与等离子体流出物具有更少的相互作用。在一些实施方式中，相互作用的量可能比其中不包括与喷淋头配合的电介质面板的系统少10％。另外，相互作用的量可能比不包括与喷淋头配合的电介质面板的系统少20％、少30％、少40％、少50％、少60％、少70％、少80％、少90％、或少100％。包括本技术的部件的系统可以更好控制等离子体流出物的复合，所述等离子体流出物可以包括例如氧气。
在上文描述中，为说明的目的，已阐明众多详述以提供对本技术的各实施方式的理解。然而，对于本领域技术人员来说显而易见的是，某些实施方式可在没有这些详述的情况下，或在具有补充详述的情况进行实践。
已经揭示了若干实施方式，本领域技术人员将认识到，在不脱离实施方式的精神的情况下，可以使用各种修改、替代构造和同等物。另外，许多已知工艺和元件尚未描述以避免对本技术的不必要的模糊。因此，上文描述将不应视为对本技术范围的限制。
在提供数值范围的情况下，应理解，除了上下文另有明确规定之外，在所述范围的上限和下限之间的每个中间值至下限单位的最小部分也被具体公开。介于任一所述值之间，或介于所述范围内中的未述中间值与所述范围内的任何其他所述值或中间值之间的较小范围也包括在内。这些较小范围的上限与下限可各自涵盖在此范围内或排除在外，且本实用新型技术也包括每一种包括在较小范围中的上限和/或下限或不含上下限的范围，取决于记载的范围中的特别排除的限制。当记载的范围包括所述上下限的一个或两个时，也包括排除了那些所包括的上下限中一个或两个的范围。
如在本文中和所附权利要求书中使用的，除非在上下文中明确指出以外，单数形式“一”(“a”、“an”)和“所述”(“the”)包括复数个引用。因此，例如，对“层”的引用包括多个这样的层，对“前驱物”的引用包括对一或多个前驱物以及本领域技术人员已知的等同物的引用，等等。
此外，当在本说明书和所附权利要求中使用时，措词“包含(comprise(s))”、“包含(comprising)”、“含有(contain(s))”、“含有(containing)”、“包括(include(s))”和“包括(including)”旨在指定所述特征、整数、部件或操作的存在，但其不排除一或多个其他特征、整数、部件、操作、动作或群组的存在或添加。

Claims (15)

1.一种半导体处理腔室，包括：
腔室外壳，至少部分地界定所述半导体处理腔室的内部区域，其中所述腔室外壳包括盖；
台座，被配置成在所述半导体处理腔室的处理区域内支撑基板；
第一喷淋头，与电源耦接，其中所述第一喷淋头定位于所述盖与所述处理区域之间的所述半导体处理腔室内；
第一电介质面板，定位于所述第一喷淋头与所述处理区域之间的所述半导体处理腔室内；
第二喷淋头，与电气接地耦接并且位于所述第一电介质面板与所述处理区域之间的所述半导体处理腔室内；以及
第二电介质面板，定位于所述第一电介质面板与所述第二喷淋头之间的所述半导体处理腔室内。
2.如权利要求1所述的半导体处理腔室，其中所述第一电介质面板和所述第二电介质面板包括石英。
3.如权利要求1所述的半导体处理腔室，进一步包括定位于所述第一电介质面板与所述第二电介质面板之间的电介质间隔物。
4.如权利要求3所述的半导体处理腔室，其中所述电介质间隔物包括环形间隔物，所述环形间隔物定位于所述第一电介质面板与所述第二电介质面板之间并且接触所述第一电介质面板和所述第二电介质面板的每个。
5.如权利要求4所述的半导体处理腔室，其中所述第一电介质面板、所述第二电介质面板和所述间隔物界定在所述半导体处理腔室内的等离子体处理区域，其中所述等离子体处理区域被配置成至少部分地包含在所述第一喷淋头与所述第二喷淋头之间产生的等离子体。
6.如权利要求5所述的半导体处理腔室，其中所述等离子体处理区域被配置成基本上含有在所述第一电介质面板与所述第二电介质面板之间的所述等离子体。
7.如权利要求1所述的半导体处理腔室，其中所述第一喷淋头和所述第二喷淋头包括金属氧化物。
8.如权利要求1所述的半导体处理腔室，其中在所述半导体处理腔室的所述内部区域内、在所述第一喷淋头与所述第一电介质面板之间的间距小于在所述半导体处理腔室内可形成的等离子体的德拜长度。
9.如权利要求8所述的半导体处理腔室，其中所述间距小于或约0.7毫米。
10.如权利要求1所述的半导体处理腔室，其中所述第二电介质面板界定第一多个孔，以及其中所述第二喷淋头界定第二多个孔，并且其中所述第一多个孔的每个孔被表征为直径小于所述第二多个孔的每个孔的直径。
11.如权利要求10所述的半导体处理腔室，其中所述第一多个孔的每个孔与所述第二多个孔的孔的至少一部分轴向对准。
12.如权利要求10所述的半导体处理腔室，其中所述第一多个孔被表征为至少两个孔的分组，以及其中每个分组的中心轴与所述第二多个孔的孔的中心轴轴向对准。
13.如权利要求10所述的半导体处理腔室，其中所述第一多个孔包括至少或约2,000个孔，以及其中所述第二多个孔包括少于或约1,200个孔。
14.如权利要求13所述的半导体处理腔室，其中所述第一多个孔包括至少或约5,000个孔，以及其中所述第二多个孔包括少于或约1,000个孔。
15.一种半导体处理腔室，包括：
腔室外壳，至少部分地界定所述半导体处理腔室的内部区域，其中所述腔室外壳包括盖；
台座，被配置成在所述半导体处理腔室的处理区域内支撑基板；
第一喷淋头，与电源耦接，其中所述第一喷淋头定位于所述盖与所述处理区域之间的所述半导体处理腔室内，并且其中所述第一喷淋头包括金属氧化物；
第一电介质面板，定位于所述第一喷淋头与所述处理区域之间的所述半导体处理腔室内；
第二喷淋头，与电气接地耦接并且定位于所述第一电介质面板与所述处理区域之间的所述半导体处理腔室内，并且其中所述第二喷淋头包括金属氧化物；
第二电介质面板，定位于所述第一电介质面板与所述第二喷淋头之间的所述半导体处理腔室内；以及
电介质间隔物，定位于所述第一电介质面板与所述第二电介质面板之间并且接触所述第一电介质面板和所述第二电介质面板的每个。
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