TW201824334A - 氧氣相容電漿源 - Google Patents

氧氣相容電漿源 Download PDF

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TW201824334A
TW201824334A TW106130704A TW106130704A TW201824334A TW 201824334 A TW201824334 A TW 201824334A TW 106130704 A TW106130704 A TW 106130704A TW 106130704 A TW106130704 A TW 106130704A TW 201824334 A TW201824334 A TW 201824334A
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德米崔 路布米斯基
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美商應用材料股份有限公司
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Abstract

描述的處理腔室可以包括腔室外殼，該腔室外殼至少部分地界定半導體處理腔室的內部區域。腔室外殼可以包括蓋。腔室可以包括被配置成在腔室的處理區域內支撐基板的台座。腔室亦可以包括與電源耦接的第一噴淋頭。第一噴淋頭可以定位於蓋與處理區域之間的半導體處理腔室內。腔室亦可包括第一介電質面板，該第一介電質面板定位於第一噴淋頭與處理區域之間的半導體處理腔室內。腔室可以包括第二噴淋頭，該第二噴淋頭與電氣接地耦接並且定位於第一介電質面板與處理區域之間的半導體處理腔室內。腔室可以進一步包括第二介電質面板，該第二介電質面板定位於第一介電質面板與第二噴淋頭之間的半導體處理腔室內。

Description

氧氣相容電漿源
本申請主張在2016年10月4日申請的美國專利申請案第15/285,214號的權益，該申請案的整個公開內容為了所有目的透過引用併入本文。
本技術涉及半導體系統、製程和設備。更具體地，本技術涉及可以在腔室內包括石英噴淋頭的處理腔室。
積體電路可以透過在基板表面上產生複雜圖案化材料層的製程而製造。在基板上產生圖案化的材料需要用於去除暴露材料的受控方法。化學蝕刻用於各種目的，包括：將光刻膠中的圖案轉印到底層中、將層薄化，或將已存在於表面上的特徵的橫向尺寸薄化。通常，期望具有一種蝕刻製程，該蝕刻製程蝕刻一種材料快於另一材料，從而促進例如圖案轉印製程。這種蝕刻製程據稱對第一材料是具有選擇性的。由於材料、電路和製程的多樣性，蝕刻製程已經發展成對於各種材料具有選擇性。
蝕刻製程使用用於蝕刻不同材料的不同前驅物。例如，一些蝕刻製程可以在蝕刻處理過程中使用含氟前驅物，以及其他蝕刻製程可以在蝕刻處理過程中使用含氫前驅物。這些化學劑可以具有與不同材料的不同親和力，並且可以導致蝕刻腔室的部件或與腔室的部件相互作用。透過調整腔室部件或提供塗層，不同腔室可以使用用於蝕刻的不同前驅物。
因此，需要可用以使用不同前驅物執行不同蝕刻製程的改良系統和方法。這些和其他需要透過本技術來解決。
本技術的半導體處理系統和方法可以包括半導體處理腔室，該半導體處理腔室包括腔室外殼，該腔室外殼至少部分地界定半導體處理腔室的內部區域。腔室外殼可以包括蓋。腔室可以包括被配置成在腔室的處理區域內支撐基板的台座。腔室亦可以包括與電源耦接的第一噴淋頭。第一噴淋頭可以位於在蓋與處理區域之間的半導體處理腔室內。腔室亦可以包括第一介電質面板，該第一介電質面板位於在第一噴淋頭與處理區域之間的半導體處理腔室內。腔室可以包括第二噴淋頭，該第二噴淋頭與電氣接地耦接並且定位於在第一介電質面板與處理區域之間的半導體處理腔室內。腔室可以進一步包括第二介電質面板，該第二介電質面板定位於在第一介電質面板與第二噴淋頭之間的半導體處理腔室內。
在實施方式中，第一介電質面板和第二介電質面板可以是石英或包括石英。在示例性腔室中，介電質間隔物可以定位於第一介電質面板與第二介電質面板之間。介電質間隔物可以是環形間隔物或包括環形間隔物，該環形間隔物位於第一介電質面板與第二介電質面板之間並且接觸第一介電質面板和第二介電質面板的每個。在一些實施方式中，第一介電質面板、第二介電質面板和間隔物可以界定半導體處理腔室內的電漿處理區域。電漿處理區域可以被配置成至少部分地含有在第一噴淋頭與第二噴淋頭之間產生的電漿。電漿處理區域可以被配置成大體上含有在第一介電質面板與第二介電質面板之間的電漿。
在一些實施方式中，第一噴淋頭和第二噴淋頭可以是金屬氧化物或包括金屬氧化物。在半導體處理腔室的內部區域內的第一噴淋頭與第一介電質面板之間的間距可以小於在半導體處理腔室內形成的電漿的德拜(Debye)長度。在一些實施方式中，間距可以小於或約0.7毫米。第二介電質面板可以界定第一多個孔，以及第二噴淋頭可以界定第二多個孔。在一些實施方式中，第一多個孔的每個孔可表徵為直徑小於第二多個孔的每個孔的直徑。在一些示例性腔室中，第一多個孔的每個孔可以與第二多個孔的孔的至少部分軸向對準。第一多個孔可由至少兩個孔的分組來表徵，以及在一些實施方式中，每個分組的中心軸可以與第二多個孔的孔的中心軸軸向對準。在實施方式中，第一多個孔可以包括至少或約2,000個孔，以及第二多個孔可以包括少於或約1,200個孔。另外，第一多個孔可以包括至少或約5,000個孔，以及第二多個孔可以包括少於或約1,000個孔。
本技術亦可以包括形成含氧電漿的方法。方法可以包括將含氧前驅物輸送到半導體處理腔室。半導體處理腔室可以包括腔室外殼，該腔室外殼至少部分地界定半導體處理腔室的內部區域。腔室外殼可以包括蓋。腔室可以包括被配置成在半導體處理腔室的處理區域內支撐基板的台座。腔室亦可以包括與電源耦接的第一噴淋頭。第一噴淋頭可以位於在蓋與處理區域之間的半導體處理腔室內。腔室可以包括第一介電質面板，該第一介電質面板定位於在第一噴淋頭與處理區域之間的半導體處理腔室內。腔室可以包括第二噴淋頭，該第二噴淋頭與電氣接地耦接並且定位於在第一介電質面板與處理區域之間的半導體處理腔室內。腔室亦可包括第二介電質面板，該第二介電質面板定位於在第一介電質面板和第二噴淋頭之間的半導體處理腔室內。方法亦可以包括在第一噴淋頭與第二噴淋頭之間由含氧前驅物產生電容耦合的電漿。
在一些實施方式中，電漿可以基本上不存在於第一噴淋頭與第一介電質面板之間。在示例性方法中，產生的電漿的電漿流出物可以流過第二介電質面板和第二噴淋頭朝向半導體處理腔室的處理區域。在一些實施方式中，大多數電漿流出物可能不與第二噴淋頭相互作用。在方法中使用的一些腔室中，第一噴淋頭和第二噴淋頭可以包括氧化鋁。
本技術亦包括半導體處理腔室。腔室可以包括腔室外殼，該腔室外殼至少部分地界定半導體處理腔室的內部區域。在實施方式中，腔室外殼可以包括蓋或蓋元件。腔室可以包括被配置成在半導體處理腔室的處理區域內支撐基板的台座。腔室可以包括與電源耦接的第一噴淋頭。第一噴淋頭可以定位於在蓋與處理區域之間的半導體處理腔室內，以及第一噴淋頭可以是金屬氧化物或包括金屬氧化物。腔室亦可以包括第一石英面板，該第一石英面板定位於在第一噴淋頭與處理區域之間的半導體處理腔室內。腔室可以包括第二噴淋頭，該第二噴淋頭與電氣接地耦接並且定位於在第一介電質面板與處理區域之間的半導體處理腔室內。在實施方式中，第一噴淋頭可以是金屬氧化物或包括金屬氧化物。腔室亦可包括第二石英面板，該第二石英面板定位於在第一介電質面板與第二噴淋頭之間的半導體處理腔室內。腔室可以包括介電質間隔物，該介電質間隔物定位於第一石英面板與第二石英面板之間並且接觸第一石英面板和第二石英面板的每個。
這種技術可以提供超越常規系統和技術的眾多益處。例如，含氧電漿可以產生並且可以展現超越常規系統的改進的複合特性。另外，系統可以允許使用額外插入件改進對腔室部件的保護。結合下文的描述和附圖更詳細地描述了這些和其他實施方式，以及其許多優勢和特徵。
本技術包括用於半導體處理的系統和部件，該半導體處理包括調諧的蝕刻製程。當電容耦合的電漿(「CCP」)在腔室中形成時，電漿流出物可以與涉及產生或含有電漿的腔室部件相互作用。根據在這些部件中使用的材料，材料可以有利地或有害地相互作用。例如，鋁或石英腔室部件可以與含氟電漿流出物化學相互作用。電漿顆粒可以在材料的表面上化學複合，並且劣化或蝕刻部件本身。金屬氧化物部件可能不被氟流出物化學劣化，但是含氫前驅物可以去除氧化物塗層，從而將底層材料暴露於其他腐蝕劑。
金屬氧化物部件亦可以導致或增大氧電漿流出物以及含氫電漿流出物的複合。這有時被稱為具有高黏著係數或能力來導致離子在表面上複合。換句話說，石英可能具有與含氧電漿流出物的降低的複合率，但可能不適於可劣化暴露的石英表面的含氟前驅物。一些常規技術透過嘗試塗覆氧化鋁或其他金屬表面來處理氧氣。這些技術由於多個原因可能是不足的。最初，由於與要塗覆的部件的熱膨脹係數不匹配，如石英的材料可能是較差的塗層部件，這可能導致石英襯墊破裂。另外，一些部件可以包括噴淋頭或面板，其可具有可能難以塗覆的圖案化的孔。穿過孔而可能不均勻的塗層可允許增大含氧電漿流出物的複合。
本技術可以透過將石英噴淋頭併入具有CCP部件的腔室內來克服這些問題中的多數。石英噴淋頭可以被定位來保護用以產生電漿的導電電極，並且可以具體被配置成控制流出物的複合。例如，穿過噴淋頭的孔可能相對於金屬電極對準來減少與金屬電極的相互作用。
儘管本公開的剩餘部分將會例行地標識使用所公開技術的具體蝕刻製程，但不難理解，系統和方法同樣地適用於如可在所述腔室中發生的各種沉積和清洗製程。因此，本技術應不被認為受限於單獨與蝕刻製程一起使用。
圖 1 示出可以包括本技術的各態樣的沉積、蝕刻、烘烤和固化腔室的處理系統100的一個實施方式的俯視平面圖。在圖1中所示的處理工具100可以含有多個處理腔室114A-D、傳送腔室110、檢修腔室116、集成計量腔室117和一對裝載閘腔室106A-B。處理腔室可以包括類似於關於圖2描述的那些的結構或部件，以及額外處理腔室。
為將基板在腔室之間傳送，傳送腔室110可以含有機器人傳送機構113。傳送機構113可以具有分別地附接到可伸長橋臂113B的遠端的一對基板傳送葉片113A。葉片113A可以用於將各個基板傳送進出處理腔室。在操作過程中，諸如傳送機構113的葉片113A的基板傳送葉片的一個可以從諸如腔室106A-B的裝載閘腔室的一個收取基板W，以及將基板W傳送到第一處理階段，例如以下在腔室114A-D中描述的蝕刻處理。若腔室被佔用，機器人可以等待直到完成處理，以及隨後將處理的基板從具有一個葉片113A的腔室去除，並且可以使用第二葉片（未圖示）將新的基板插入。一旦基板被處理，它隨後就可以被移到第二處理階段。對於每次移動，傳送機構113通常可以具有攜帶基板的一個葉片和用於執行基板交換的一個空的葉片。傳送機構113可以在每個腔室處等待直到可完成交換為止。
一旦處理在處理腔室內完成，傳送機構113可以將基板W從最後的處理腔室移走並且將基板W傳送到裝載閘腔室106A-B內的匣。從裝載閘腔室106A-B，基板可以移動至工廠介面104中。工廠介面104通常可以操作以將基板在大氣壓清潔環境中的箱裝載機105A-D與裝載閘腔室106A-B之間傳遞。例如，工廠介面104中的清潔環境可以通常透過空氣過濾處理來提供，諸如HEPA過濾。工廠介面104亦可以包括基板定位器/校準器（未圖示），該基板定位器/校準器可以用於在處理之前適當地對準基板。至少一個基板機器人（諸如機器人108A-B）可以被放置在工廠介面104中以將基板在工廠介面104內的不同定位/位置之間傳遞並且傳遞到彼此連通的其他位置。機器人108A-B可以被配置成沿外殼104內的軌道系統從工廠介面104的第一端行進到第二端。
處理系統100可以進一步包括提供控制信號的集成計量腔室117，其可以提供對要在處理腔室中執行的處理中的任一個的自我調整控制。集成計量腔室117可以包括各種計量裝置的任一個以量測不同膜的性質，諸如厚度、粗糙度、組分；並且計量裝置可以進一步能夠以自動方式表徵在真空下的光柵參數，諸如臨界尺寸、側壁角度和特徵高度。
現在轉向圖 2 ，圖 2 示出根據本技術的示例性處理腔室系統200的橫截面視圖，這可以包括貫穿本公開論述的各態樣。例如，腔室200可以在先前論述的系統100的處理腔室區域114的一或多個中使用。一般來說，蝕刻腔室200可以包括用以實施離子銑削操作的第一電容耦合的電漿源和用以實施蝕刻操作和實施可選擇的沉積操作的第二電容耦合的電漿源。如下文進一步解釋，腔室可以另外包括被配置用於包括含氧前驅物的電漿的部件。腔室200可以包括圍繞卡盤250的接地腔室壁240。在實施方式中，卡盤250可以為靜電卡盤，該靜電卡盤在處理過程中將基板202夾緊到卡盤250的頂表面上，但是亦可以使用其他如將已知的夾緊機構。卡盤250可以包括嵌入的熱交換器線圈217。在示例性實施方式中，熱交換器線圈217包括一或多個熱傳送流體通道，諸如乙二醇/水混合物的熱傳送流體可以傳遞透過該熱傳送流體通道以控制卡盤250的溫度並且最終控制基板202的溫度。
卡盤250可以包括耦接到高壓DC電源248的網眼249，以便網眼249可以傳送直流偏壓電位來實施基板202的靜電夾緊。卡盤250可以與第一RF電源耦接，並且在一個該實施方式中，網眼249可以與第一RF電源耦接，以便DC電壓偏移和RF電壓電位兩者跨卡盤250的表面上的薄介電質層耦接。在說明性實施方式中，第一RF電源可以包括第一和第二RF發生器252、253。RF發生器252、253可以以任意工業上利用的頻率來操作，然而在示例性實施方式中，RF發生器252可以在60MHz的頻率下操作來提供有利的方向性。在亦提供第二RF發生器253的情況下，示例性頻率可以為2 MHz。
在要對卡盤250 RF供電的情況下，RF返回途徑可以由第一噴淋頭225來提供，該第一噴淋頭可以包括雙通道噴淋頭。第一噴淋頭225可以設置在卡盤上方，以將第一進料氣體分配到由第一噴淋頭225和腔室壁240界定的第一腔室區域284中。因而，卡盤250和第一噴淋頭225形成第一RF耦合的電極對以電容激勵在第一腔室區域284內的第一進料氣體的第一電漿270。由RF供電的卡盤的電容耦合產生的DC電漿偏壓或RF偏壓可以產生從第一電漿270到基板202的離子流（例如，第一進料氣體為Ar的Ar離子），以提供離子銑削電漿。第一噴淋頭225可以接地或者與RF源228耦接，該RF源228具有在除了卡盤250的頻率以外的頻率下（例如，13.56 MHz或60 MHz）操作的一或多個發生器。在圖示的實施方式中，第一噴淋頭225可以透過繼電器227選擇性地接地或耦接到RF源228，繼電器227可以在蝕刻處理過程中例如透過控制器（未圖示）自動地控制。在公開的實施方式中，腔室200可以不包括噴淋頭225或介電質間隔物220，並且可以改為僅包括下文進一步描述的擋板215和噴淋頭210。
如在圖中進一步所示，蝕刻腔室200可以包括能夠在低處理壓力下具有高輸送量的泵堆疊。在實施方式中，至少一個渦輪分子泵265、266可以透過一或多個閘閥260與第一腔室區域284耦接並且設置在卡盤250下方、與第一噴淋頭225相對。渦輪分子泵265、266可以是具有合適輸送量的任何市售的泵，並且更確切地可以適當地調整尺寸，以在第一進料氣體的所要流速下將處理壓力維持在低於或約10 mTorr或低於或約5 mTorr，例如其中氬氣為第一進料氣體的50至500 sccm的Ar。在所示的實施方式中，卡盤250可以形成位於兩個渦輪泵265與266之間的中心的台座的部分，然而在交替配置中，卡盤250可以在從腔室壁240懸掛的台座上，該腔室壁240具有與卡盤250的中心對準的單個渦輪分子泵。
設置在第一噴淋頭225上方的可以是第二噴淋頭210。在一個實施方式中，在處理過程中，從氣體分配系統290釋放的第一進料氣源（例如，氬氣）可以與進氣口276耦接，並且第一進料氣體流過延伸穿過第二噴淋頭210的多個孔280、進入第二腔室區域281，以及流過延伸穿過第一噴淋頭225的多個孔282而進入第一腔室區域284。具有孔278的附加流量分配器或擋板215可以進一步穿過分佈區218跨蝕刻腔室200的直徑分配第一進料氣體流216。在替換實施方式中，第一進料氣體可以經由孔283直接地流進第一腔室區域284，該孔283與由短劃線223表示的第二腔室區域281絕緣。
腔室200可以另外從所示的狀態重新配置以執行蝕刻操作。次級電極205可以設置在第一噴淋頭225上方，在其之間具有第二腔室區域281。次級電極205可以進一步形成蝕刻腔室200的蓋或頂板。次級電極205和第一噴淋頭225可以透過介電質環220電隔離，並且形成第二RF耦合的電極對以將第二進料氣體的第二電漿292在第二腔室區域281中電容放電。有利地，第二電漿292可以不在卡盤250上提供顯著的RF偏壓電位。第二RF耦合電極對的至少一個電極可以與RF源耦接以激勵蝕刻電漿。次級電極205可以與第二噴淋頭210電耦接。在示例性實施方式中，第一噴淋頭225可以與接地平面耦接或浮置，以及可以透過繼電器227耦接到地，從而允許第一噴淋頭225在離子銑削式操作過程中亦由RF電源228來供電。在第一噴淋頭225接地的情況下，具有在13.56 MHz或60 MHz下操作的一或多個RF發生器的RF電源208可以透過繼電器207來與次級電極205耦接，該繼電器207可以允許次級電極205在其他操作模式中（諸如在離子銑削操作中）同樣接地，但是若對第一噴淋頭225供電，則第二電極205亦可保持浮置。
諸如三氟化氮的第二進料氣源和諸如氨氣的氫源可以從氣體分配系統290釋放，並且諸如經由短劃線224與進氣口276耦接。在此模式中，第二進料氣體可以流過第二噴淋頭210並且可以在第二腔室區域281中被激勵。隨後，活性物質可以傳遞進入第一腔室區域284中以與基板202反應。如進一步所示，對於第一噴淋頭225為多通道噴淋頭的實施方式中，可提供一或多種進料氣體以與由第二電漿292產生的活性物種反應。在一個該實施方式中，水源可以與多個孔283耦接。附加配置亦可以基於所提供的一般說明，但是其中重新配置不同部件。例如，流量分配器或擋板215可以是類似於第二噴淋頭210的板，並且可以定位在第二電極205與第二噴淋頭210之間。
因為這些板的任一個可以在用於產生電漿的不同配置中作為電極操作，所以一或多個環形或其他形狀的間隔物可以位於類似於介電質環220的這些部件的一或多個之間。第二噴淋頭210亦可以在實施方式中作為離子抑制板操作，並且可以被配置成透過第二噴淋頭210減少、限制或抑制離子物種的流動，同時仍然允許中性和自由基物種的流動。一或多個附加噴淋頭或分配器可以被包括在第一噴淋頭225和卡盤250之間的腔室中。這種噴淋頭可以採取上述的任何分配板或結構的形狀或結構。同時，在實施方式中，遠端電漿單元（未圖示）可以與進氣口耦接以向腔室提供電漿流出物以用於不同處理。
在實施方式中，卡盤250可以在垂直於第一噴淋頭225的方向中沿距離H2移動。卡盤250可以在由波紋管255或類似物圍繞的致動機構上，以允許卡盤250向第一噴淋頭225移動更近或更遠，以作為控制在卡盤250與第一噴淋頭225之間的熱傳遞的方法，這可以在80℃–150℃的高溫下或更高溫度下進行。因而，蝕刻處理可以透過將卡盤250相對於第一噴淋頭225在第一和第二預定位置之間移動來實施。或者，卡盤250可以包括升降機構251來將基板202從卡盤250的頂表面提升距離H1，以在蝕刻處理過程中透過第二噴淋頭225來控制加熱。在其他實施方式中，在蝕刻處理在諸如約90-110℃的固定溫度下執行的情況下，可以避免卡盤位移機構。系統控制器（未圖示）可以透過自動地交替對第一和第二RF耦合電極對供電來在蝕刻處理過程中交替地激勵第一和第二電漿270和292。
腔室200亦可以被重新配置成執行沉積操作。電漿292可以透過RF放電在第二腔室區域281中產生，該RF放電可以以針對第二電漿292描述的任一種方式來實施。在對第一噴淋頭225供電以在沉積過程中產生電漿292的情況下，第一噴淋頭225可以透過介電質間隔物230而與接地的腔室壁240隔離，以便相對於腔室壁電浮置。在示例性實施方式中，諸如分子氧的氧化劑進料氣源可以從氣體分配系統290釋放，並且與進氣口276耦接。在其中第一噴淋頭225為多通道噴淋頭的實施方式中，諸如OMCTS的任意含矽前驅物可以從氣體分配系統290傳遞，並且被引導至第一腔室區域284中以與來自電漿292的穿過第一噴淋頭225的活性物種反應。或者，含矽前驅物亦可以伴隨著氧化劑流過進氣口276。腔室200被包括為可以用於參考本技術論述的不同操作的通用腔室配置。
圖 3 為根據實施方式的與處理腔室一起使用的噴淋頭325的仰視圖。噴淋頭325可以與在圖2中示出的噴淋頭225對應。通孔365（其可以是第一流體通道或孔282的視圖）可以具有多個形狀和配置以控制和影響前驅物穿過噴淋頭225的流動。小孔375（其可以是第二流體通道或孔283的視圖）可以在噴淋頭的表面上方、甚至在通孔365中間大體上平均地分佈，並且可以當前驅物離開噴淋頭時提供比其他配置更均勻混合的前驅物。
在圖 4 中示出根據實施方式的面板的佈置。如圖示出，面板400可以包括多孔板或歧管。面板的元件可以類似於在圖3中示出的噴淋頭，或者可以包括特定地被配置成用於前驅物氣體的分佈圖案的設計。面板400可以包括定位於示例性處理腔室內的各種佈置中的環形框410，諸如在圖2中示出的腔室。板420可以耦接在框上或框內，這可以在實施方式中類似於如下描述的離子抑制板523。在實施方式中，面板400可以是單件式設計，其中框410和板420是單件材料。
板可以具有圓盤形狀，並且位於框410上或框410內。板可以是諸如包括鋁的金屬的導電材料，以及允許板用作電極在如上所述的電漿佈置中使用的其他導電材料。板可以具有各種厚度，並且可以包括在板內界定的多個孔465。在圖4中示出的示例性佈置可以包括如上文參照在圖3中的佈置描述的圖案，並且可以包括在幾何圖案（諸如如圖所示的六邊形）中的孔的一系列環。應理解，所示的圖案是示例性的，並且應理解，不同圖案、孔佈置和孔間距包含在設計中。
孔465可以經尺寸設定成或者以其他方式被配置成允許流體在操作過程中流過孔。孔在不同實施方式中可以經尺寸設定成小於約2英寸，並且可以低於或約1.5英寸、約1英寸、約0.9英寸、約0.8英寸、約0.75英寸、約0.7英寸、約0.65英寸、約0.6英寸、約0.55英寸、約0.5英寸、約0.45英寸、約0.4英寸、約0.35英寸、約0.3英寸、約0.25英寸、約0.2英寸、約0.15英寸、約0.1英寸、約0.05英寸、約0.04英寸、約0.035英寸、約0.03英寸、約0.025英寸、約0.02英寸、約0.015英寸、約0.01英寸等或更小。
在一些實施方式中，面板400可以作為離子抑制器操作，該離子抑制器界定貫穿結構的多個孔，其被配置成抑制帶電離子物種移出腔室電漿區域，同時允許不帶電的中性或自由基物種穿過離子抑制器至在離子抑制器的下游的活性氣體輸送區域中。在實施方式中，離子抑制器可以是具有不同孔配置的多孔板。這些不帶電物種可以包括與較少的反應載氣一起傳送透過孔的高度活性物種。如上文說明，離子物種穿過孔洞的遷移可以被減少，並且在一些情況下完全地被抑制。例如，孔洞的長寬比、或者孔徑對長度、和/或孔洞的幾何形狀可被控制，以使得穿過離子抑制器的活性氣體中的帶電離子物種流減少。
轉向圖 5 ，圖 5 示出根據本技術的處理腔室500的簡明示意圖。腔室500可以包括如上文關於圖2至圖4論述的部件的任一個，並且可以被配置成在腔室的處理區域560中容納半導體基板555。腔室外殼503可以至少部分地界定腔室的內部區域。例如，腔室外殼503可以包括蓋502，並且可以至少部分地包括在圖中示出的其他板或部件中的任一個。例如，腔室部件可以被包括為一系列堆疊部件，其中每個部件至少部分地界定腔室外殼503的部分。基板555可以定位於如圖所示的台座565上。處理腔室500可以包括與入口501耦接的遠端電漿單元（未圖示）。在其他實施方式中，系統可能不包括遠端電漿單元，並且可以被配置成直接透過入口501接收前驅物，其可以包括用於將分佈到腔室500的一或多個前驅物的入口組件。
在具有或不具有遠端電漿單元的情況下，系統可以被配置成透過入口501接收前驅物或其他流體，其可以提供到處理腔室的混合區511的通路。混合區511可以與腔室的處理區域560分隔，並且與腔室的處理區域560流動耦接。混合區511可以由系統500的腔室的頂部（諸如腔室蓋502或蓋元件）至少部分地界定，其可以包括用於一或多個前驅物的入口元件，和諸如下方的噴淋頭或面板509的分配裝置。面板509可以在公開的實施方式中類似於在圖4中所示的噴淋頭或面板。面板509可以包括多個通道或孔507，該多個通道或孔507可以被定位和/或定型以在前驅物穿過腔室進行之前影響前驅物在混合區511中的分佈和/或停留時間。
例如，複合可以透過調整跨面板509的孔的數目、孔的大小或孔的配置來影響或控制。如圖所示，面板509可以定位於腔室的混合區511與處理區域560之間，以及面板509可以被配置成分佈穿過腔室500的一或多個前驅物。系統500的腔室可以包括一系列部件的一或多個，其可以選擇性地被包括在公開的實施方式中。例如，儘管描述了面板509，在一些實施方式中腔室可以不包括這種面板。另外，在公開的實施方式中，至少部分地混合在混合區511中的前驅物可以經由系統的工作壓力、腔室部件的佈置或前驅物的流量分佈的一或多個而被引導穿過腔室。
腔室500可以另外包括第一噴淋頭515。噴淋頭515可以具有關於圖3至圖4論述的板的特徵或特性的任一個。噴淋頭515可以定位於如圖所示的半導體處理腔室內，並且可以被包括在或定位於蓋502與處理區域560之間。在實施方式中，噴淋頭515可以是金屬的或導電的部件或者包括金屬的或導電的部件，該部件可以是已塗覆、調節（season）或以其他方式處理的材料。示例性材料可以包括金屬（包括鋁）以及金屬氧化物（包括氧化鋁）。根據正在使用的前驅物或正在腔室內執行的處理，噴淋頭可以是可提供結構穩定性以及可利用的導電性的任意其他金屬。
噴淋頭515可以界定一或多個孔517以促進穿過噴淋頭的前驅物均勻分佈。孔517可以被包括在各種配置或圖案中，並且可以由如可能需要的可提供前驅物分佈的任何數目的幾何形狀來表徵。在實施方式中，噴淋頭515可以與電源電耦接。例如，噴淋頭515可以與如圖所示的RF源519耦接。當操作時，RF源519可以向噴淋頭515提供電流，以允許電容耦合的電漿(「CCP」)在噴淋頭515與另一部件之間形成。
腔室500亦可以包括介電質面板521。介電質面板521可以具有上文關於圖3至圖4論述的板的特徵或特性的任一個。介電質面板521可以定位於在噴淋頭515與處理區域560之間的腔室500內。介電質面板521可以包括透過面板界定的多個孔523。另外，腔室500可以包括介電質面板525。介電質面板525可以具有上文關於圖3至圖4論述的板的特性或特徵的任一個，並且可以與介電質面板521類似或不同。介電質面板525可以界定在面板的結構內的孔527，並且可以具有或包括與介電質面板521類似或不同圖案的孔。介電質面板525可以定位於在介電質面板521與噴淋頭531之間的腔室內。介電質面板的一個或兩個可以是絕緣材料或包括絕緣材料。在實施方式中，介電質面板521、525可以是石英或可能已減小與含氧電漿流出物相互作用的任何材料，諸如相比於金屬氧化物部件，對氧氣複合的影響減小。
噴淋頭531可以是包括在腔室內的第二噴淋頭，並且可以作為具有噴淋頭515的附加電極操作。噴淋頭531可以包括上述的噴淋頭515的特性或特徵的任一個。在其實施方式中，噴淋頭531的某些特徵可以偏離噴淋頭515。例如，在實施方式中，噴淋頭531可以與電氣接地534耦接，這可以允許電漿在噴淋頭515與噴淋頭531之間產生。噴淋頭531可以界定結構內的孔533以允許前驅物或電漿流出物輸送到處理區域560。
腔室500選擇性地可以進一步包括在腔室內的氣體分配元件535。在一些實施方式中，在噴淋頭531與處理區域560之間可能沒有部件，並且噴淋頭531可以允許前驅物或電漿流出物分配到處理區域560。氣體分配元件535（其可以在各態樣類似於如上所述的雙通道噴淋頭）可以位於在處理區域560上方的腔室內，諸如在處理區域560與蓋502之間，以及在處理區域560與噴淋頭531之間。氣體分配元件535可以被配置成將第一和第二前驅物兩者輸送到腔室的處理區域560中。在實施方式中，氣體分配元件535可以至少部分地將腔室的內部區域劃分成定位基板555的遠端區域和處理區域。
儘管圖5的示例性系統包括雙通道噴淋頭，但是應理解替換的分配元件可以被使用，其維持前驅物與透過入口501引入的物種流體地分離。例如，可以利用在板下面的多孔板和管，但是其他配置可以在減少的效率的情況下操作，或者不提供如描述的雙通道噴淋頭的均勻處理。透過使用所公開設計的一個設計，前驅物可以在進入處理區域560之前被引入至先前未被電漿激發的處理區域560中，或者前驅物可以被引入以避免接觸可能與其反應的額外前驅物。儘管未圖示，但是附加的間隔物可以定位於噴淋頭531與氣體分配元件535之間，諸如環形間隔物，以將板彼此分隔。在可不包括附加前驅物的實施方式中，氣體分配元件535可以具有類似於上述部件的任一個的設計，以及可以包括類似於在圖3至圖4中所示的板的特性。
在實施方式中，氣體分配元件535可以包括嵌入式加熱器539，其可以包括例如電阻加熱器或溫度受控的流體。氣體分配元件535可以包括上板和下板。板可以彼此耦接以界定在板之間的容積537。板的耦合可以能夠提供透過上下板的第一流體通道540和透過下板的第二流體通道545。形成的通道可以被配置成提供從容積537穿過下板的流體通路，以及第一流體通道540可以流體地與在板與第二流體通道545之間的容積537分隔。容積537可以穿過氣體分配元件535的側面流體地接入，諸如如先前論述的通道223。通道可以與腔室中的通路耦接，該通路與腔室500的入口501分隔。
可能或可能不包括在腔室500中的附加可選擇的部件是面板547，面板547亦可以是介電質，諸如石英。面板547可以提供類似功能，以及包括類似於面板521、525的特性，並且可以在如上解釋的離子銑削或離子蝕刻操作中使用。面板547可以包括由面板的結構界定的孔549。面板的任一個可以具有如貫穿本申請案論述的孔特性、圖案或尺寸。腔室500亦可以包括腔室襯墊551，其可以例如保護腔室壁免受電漿流出物以及材料沉積的影響。襯墊可以是導電材料或可以包括導電材料，以及在實施方式中襯墊可以是絕緣材料或包括絕緣材料。在一些實施方式中，腔室壁或襯墊可以作為附加的電氣接地源操作。
間隔物529可以定位於第一介電質面板521與第二介電質面板525之間。間隔物可以是介電質，並且可以是石英或在兩個部件之間提供絕緣的任何其他介電質材料。在實施方式中，間隔物529可以是定位於兩個面板之間並且接觸介電質面板521和介電質面板525兩者的環形間隔物。
在一些實施方式中，如早先描述的電漿可以形成於腔室區域中，該腔室區域被界定在上述部件的兩個或更多個之間。例如，諸如電漿處理區域550的電漿區域可以在噴淋頭515與噴淋頭531之間形成。間隔物529可以維持兩個部件彼此電隔離，以允許形成電漿場。噴淋頭515可以是帶電的，同時噴淋頭531可以接地或DC偏壓以在板之間界定的區域內產生電漿場。板可以另外被塗覆或調節，以最小化電漿可以在其之間形成的部件的劣化。板可以另外包括可能不太可能劣化或受影響的組合物，其包括陶瓷、金屬氧化物或其他導電材料。
使用諸如氧氣或氫氣的某些前驅物操作常規電容耦合的電漿(「CCP」)可能影響對如先前論述的電漿複合的控制。例如，部件可以是氧化鋁塗層或包括氧化鋁塗層，或者可以是鋁。氧化鋁可以增大氧氣離子和自由基接觸後的複合，其可能導致電漿流出物的均勻性和控制的問題，這可能影響正在工作的基板。因此，為保護電漿流出物，其可以是含氧流出物或含氫流出物，例如，石英板521、525可以被包括在電漿處理區域550中。在其他實施方式中，板521、525可以是除了石英以外的材料或包括除了石英以外的材料，該材料包括諸如可以展現低導電率的陶瓷或非金屬材料的其他介電質材料。
電漿處理區域550可以被部分地界定在第一噴淋頭515與第二噴淋頭531之間。另外，第一介電質面板521、第二介電質面板525（兩者可以是石英）和間隔物529可以界定半導體處理腔室內的電漿處理區域550。這些部件可以至少部分地被配置成至少部分地含有在第一噴淋頭515與第二噴淋頭531之間產生的電漿。在一些實施方式中，這些部件可以被間隔、定位或被配置成大體上含有在第一介電質面板521與第二介電質面板525之間的電漿。
相對於第一介電質面板521和第二介電質面板525，在第一噴淋頭515與第二噴淋頭531的每個之間的間距可以影響電漿處理區域550的範圍。例如，電漿可以能夠在產生電漿的電極（諸如噴淋頭515和噴淋頭531）之間的整個間距中產生。若這在實施方式中發生，則含氧前驅物可以在第一噴淋頭515與第一介電質面板521之間離子化。離子或自由基可以隨後接觸噴淋頭515，並且開始在比維持在石英部件之間的速率更高的速率下複合。類似的現象可以在第二噴淋頭531與第二介電質面板525之間發生。然而，第一介電質面板521和第二介電質面板525可以被定位以調整電漿處理區域，以在電極、或噴淋頭515和噴淋頭531的表面處減少、阻止或大體上阻止電漿產生。
例如，根據包括諸如溫度、壓力和產生頻率的工作條件的某些特性，電漿可以在具有大於德拜長度的長度的區域中產生，在該區域中電漿可以保持平均電中性或準中性。在具有少於德拜長度的距離的區域中，這可能達不到，並且電漿可能不衝擊。因此，透過維持少於德拜長度的第一噴淋頭515與第一介電質間隔物521之間的距離，電漿可以不在部件之間形成。類似地，第二噴淋頭531與第二介電質面板525之間的距離亦可以被維持在德拜長度以下，以限制電漿在此區域內產生。因此，在實施方式中，兩個距離可以被維持在德拜長度以下，並且電漿可以大體上或基本上包含在第一介電質面板521與第二介電質面板525之間界定的區域內。
在含氧電漿正在電漿處理區域550內產生的一些實施方式中，例如根據工作壓力和頻率，德拜長度可以小於或約25毫米。該長度可以在半導體處理腔室的內部區域內的兩個板上的軸向取向位置之間。例如，板可以在板的外部邊緣處彼此接觸，但是可以維持跨處理腔室的內部區域的距離。在實施方式中，噴淋頭515、531與它們的各自的石英面板521、525之間的距離可以被維持在低於或約25毫米。在其他實施方式中，距離可以被維持在低於或約20毫米、低於或約15毫米、低於或約12毫米、低於或約10毫米、低於或約8毫米、低於或約6毫米、低於或約5毫米、低於或約4毫米、低於或約3毫米、低於或約2毫米、低於或約1毫米、低於或約0.9毫米、低於或約0.8毫米、低於或約0.7毫米、低於或約0.6毫米、低於或約0.5毫米、低於或約0.4毫米、低於或約0.3毫米、低於或約0.2毫米、低於或約0.1毫米、或大約0毫米，其中噴淋頭和石英面板接觸。這些部件可以被維持在所列出的這些距離的任意一個之間的距離處或在界定範圍的任何較小範圍內。例如，噴淋頭和石英板在實施方式中可以被維持在約0毫米與約1毫米之間，或在約0.1毫米與約0.6毫米之間。
例如，噴淋頭515或者噴淋頭531可以不與介電質面板521或者介電質面板525直接接觸。儘管石英可以在溫度迴圈週期內展現可接受的特性，但是在石英面板與鋁或氧化鋁噴淋頭之間的直接接觸可能導致石英面板的破裂。因此，在沒有間距在噴淋頭515、531與介電質面板521、525之間形成的實施方式中，材料可以被定位與噴淋頭和介電質面板直接接觸，這可以吸收在任一材料中的熱誘導變化，或在兩個部件之間提供緩衝。
在操作過程中，在可以在腔室500或類似腔室中執行的示例性處理過程中，含氧電漿可以在介電質面板521與介電質面板525之間產生。產生的流出物可以穿過腔室500的內部區域前往處理區域560。為了從電漿處理區域550行進到處理區域560，可能包括含氧流出物的電漿流出物可以不僅透過介電質面板525，而且透過噴淋頭531。因此，可以是諸如鋁的導電材料、可以具有諸如氧化鋁的塗層的噴淋頭531可以與電漿流出物相互作用。在實施方式中，噴淋頭531和/或介電質面板525的孔或配置可以被調整以調節結構和減少氧化鋁和鋁對產生的電漿流出物的影響。
轉向圖 6A ，圖 6A 示出根據本技術的實施方式的示例性介電質面板600的俯視平面圖。如圖所示，面板600可以包括介電質材料610，面板600在實施方式中可以是石英。另外，在實施方式中，介電質面板可以是介電質面板521、525中的任一個。介電質面板600可以包括關於上文圖3至圖4論述的板的部件或特性的任一個。介電質面板600可以包括由面板的結構界定的孔620，並且面板可以在實施方式中界定第一多個孔。被包括在面板600內的孔可以表徵為如圖所示的分組。在實施方式中，分組可以包括至少兩個孔，以及根據在對應噴淋頭中的面板的尺寸、孔的尺寸和孔的關聯的因素，分組可以每分組包括至少或約3個孔、每分組至少或約4個孔、每分組至少或約5個孔、每分組至少或約6個孔、每分組至少或約7個孔、每分組至少或約8個孔、每分組至少或約9個孔、每分組至少或約10個孔、每分組至少或約15個孔、每分組至少或約20個孔、每分組至少或約50個孔、每分組至少或約100個孔、每分組至少或約130個孔、每分組至少或約160個孔、每分組至少或約200個孔，或更多個孔。
另外，孔620的尺寸可以用以影響或控制電漿複合。在實施方式中，每個孔620可以由大於或約0.1毫米的直徑表徵，以及可由大於或約0.15毫米、大於或約0.2毫米、大於或約0.25毫米、大於或約0.3毫米、大於或約0.35毫米、大於或約0.4毫米、大於或約0.45毫米、大於或約0.5毫米、大於或約0.55毫米、大於或約0.6毫米、大於或約0.65毫米、大於或約0.7毫米、大於或約0.75毫米、大於或約0.8毫米、大於或約0.85毫米、大於或約0.9毫米、大於或約0.95毫米、大於或約1.0毫米、大於或約1.25毫米、大於或約1.5毫米、大於或約1.75毫米、大於或約2毫米、大於或約2.5毫米或更大的直徑表徵。
直徑意欲覆蓋跨孔或垂直於孔的中心軸的寬度，例如，諸如在非圓形孔中，由貫穿孔的高度改變的幾何形狀表徵的孔。在實施方式中，每個孔亦可由在約0.1毫米與約1毫米之間，在約0.3毫米與約0.8毫米之間，或在約0.4毫米至約0.5毫米之間的直徑表徵。在實施方式中，介電質面板可由在整個面板上具有大於或約1,000個孔表徵，並且每個孔可以併入特定分組內。另外，面板可以根據孔徑以及分組中的板尺寸和孔佈置而表徵為例如大於或約2,000個孔、大於或約3,000個孔、大於或約4,000個孔、大於或約5,000個孔、大於或約6,000個孔、大於或約7,000個孔、大於或約8,000個孔、大於或約9,000個孔、大於或約10,000個孔或更多個孔。在其他實施方式中，面板600可以包括小於所列出的孔的數量或尺寸中的任一個，或者在所列出的範圍的任一個內的更小範圍內。
圖 6B 示出根據本技術的實施方式的示例性噴淋頭650和面板600的仰視平面圖。部件可以是上述噴淋頭531和介電質面板525的視圖。如圖所示，噴淋頭650可以包括板660，板660可以是導電材料。噴淋頭650可以在腔室內作為CCP佈置中的接地電極操作。噴淋頭650亦可以界定多個孔670，多個孔670可以是第二多個孔。孔670可以大於第一孔620，孔620中的每個可以表徵為直徑小於第二多個孔670的每個孔的直徑。
孔670可以表徵為直徑大於面板600的各個孔620的直徑。在實施方式中，每個孔670可以根據來自面板600的噴淋頭的尺寸和關聯孔的數目表徵為直徑大於或約1毫米、大於或約2毫米、大於或約3毫米、大於或約4毫米、大於或約5毫米、大於或約6毫米、大於或約7毫米、大於或約8毫米、大於或約9毫米、大於或約10毫米、大於或約11毫米、大於或約12毫米、大於或約13毫米、大於或約15毫米、大於或約20毫米、或更大。另外，噴淋頭650可以界定穿過其結構的至少約200個孔670，以及在實施方式中噴淋頭650可以根據孔的尺寸以及孔透過其界定的板界定至少約300個孔、至少約400個孔、至少約500個孔、至少約600個孔、至少約700個孔、至少約800個孔、至少約900個孔、至少約1,000個孔、至少約1,100個孔、至少約1,200個孔、至少約1,300個孔、至少約1,500個孔、至少約2,000個孔或更多個孔。在其他實施方式中，噴淋頭650可以包括小於所列出的孔的數量或尺寸中的任一個，或者在所列出的範圍的任一個內的更小範圍。
孔670可以被配置在相對其中可以配置第一多個孔620的圖案的圖案中。例如，第一多個孔620的每個孔可以與第二多個孔670的孔的至少一部分軸向對準。在實例中，第一多個孔620的孔可以與第二多個孔670的孔對準或圍繞第二多個孔670的孔，以便第一多個孔620的孔的至少部分朝由第二多個孔670的孔界定的空間延伸或覆蓋該空間。另外，在該第一多個孔620併入分組的實施方式中，第一多個孔620的每個分組的中心軸可以與第二多個孔670的孔的中心軸軸向對準。例如，如在圖中示出，每個孔670可以與孔620的分組的中心軸對準。
在實施方式中，每個孔670可以與第一多個孔620中的至少約3個孔的分組對準。另外，例如，根據孔620的尺寸、孔670的尺寸以及噴淋頭和面板尺寸，每個孔670可以與第一多個孔620中的至少約4個孔、至少約5個孔、至少約6個孔、至少約7個孔、至少約8個孔、至少約9個孔、至少約10個孔、至少約11個孔、至少約12個孔、至少約13個孔、至少約14個孔、至少約15個孔、至少約20個孔、至少約50個孔、至少約75個孔、至少約100個孔、至少約125個孔、至少約150個孔、至少約175個孔、至少約200個孔、或更多個孔的分組對準。儘管如一個噴淋頭和面板對論述，應理解，組合可以是如先前論述的噴淋頭515、531和介電質面板521、525的一者或兩者。另外，第一噴淋頭/面板組合可以表徵為第一孔配置，同時第二噴淋頭/面板組合可以表徵為第二孔配置。
在許多CCP電極流通配置中，其中前驅物可以穿過至少一個電極以與基板相互作用，諸如噴淋頭531的電極的孔徑大小調整例如可以影響操作。例如，當孔徑尺寸增大，電漿洩漏可能發生，並且控制正產生的電漿或流出物可能變得更加困難。另外，電漿顆粒可以透過噴淋頭洩漏並且與基板相互作用，這可以導致濺射或其他損害。因此，許多常規CCP系統可以限於小於幾毫米或小於毫米的孔徑。然而，本系統可以利用諸如石英面板的面板，以透過在面板中使用更小孔洞來控制電漿。以這種方法，噴淋頭內的孔可以增大以超過對於常規系統可能發生的限制，並且可以減少與電漿流出物的相互作用。另外，不管增大的孔徑尺寸，噴淋頭仍然可作為可以形成電漿的電極而可接受地操作。
轉向圖 7A ，圖 7A 示出根據本技術的實施方式的示例性面板700的俯視平面圖。面板700可以包括或表徵為先前論述的任意面板的特徵或特性中的任一個。面板700可包括已界定孔720的介電質材料710。孔720可以是或包括先前論述的尺寸或分組特性的任一個。另外示出了面板700可以與其耦接的噴淋頭的示例性孔730。這種配置可以類似例如介電質面板525和噴淋頭531的俯視圖，但亦可以示出與介電質面板521和噴淋頭515相容的特性。孔730示為隱形的，因為它們可能從面板700的任意特定孔720不可見。
例如，在實施方式中，孔720可以與諸如孔730的噴淋頭孔交錯，以便從任何孔720看不見任何孔730。許多可能的配置用於界定在面板700中的孔來產生這種效應是可能的。例如，孔720可以被包括在跨面板700的圖案中以阻止與對應噴淋頭的任意孔730的任意取向或對準。另外，孔720可以被包括在圍繞對應噴淋頭的孔730的相對周邊延伸的分組中。例如，如圖所示，孔720被包括在圍繞對應噴淋頭的孔730的對應位置的約6個孔的分組中。上述分組的任一個或孔配置可以類似地被應用於此佈置，並且含在本技術中。
圖 7B 示出根據本技術的實施方式的示例性噴淋頭750的仰視平面圖。例如，噴淋頭750可以是與面板700一起示出的具有孔730的對應噴淋頭。在實施方式中，噴淋頭750可以表徵為上述噴淋頭的任一個的配置或特性中的任一個。如圖所示，孔730可以不向面板700的任何孔提供視線，其可以具有圍繞對應面板700的孔730交錯的孔。儘管在實例中沒有示出對應面板的孔，但是在其他實施方式中，面板的孔的任意百分比或部分可以是可見的或可看見噴淋頭750的任何孔730。
上述腔室、面板和噴淋頭可以在一或多個方法中使用。圖 8 示出示例性方法800的操作，該方法可以在上述腔室中執行，諸如腔室500的一或多個版本中，或者可以在包括上述面板或噴淋頭的任一個的腔室中執行。如圖所示，方法可以包括在操作805處將前驅物流進腔室中。在實施方式中，例如前驅物可以是氧氣或包括氧氣，並且亦可以包括氫氣、惰性前驅物或在半導體處理中使用的一些其他前驅物。在一些實施方式中，前驅物或輸送到腔室的前驅物可以是一或多個含鹵素前驅物或包括一或多個含鹵素前驅物，儘管在其他實施方式中，前驅物可以不含一或多個含鹵素前驅物。例如，在實施方式中，前驅物可以不含含氟前驅物。然而，附加的前驅物可以經由氣體分配元件535輸送到腔室，諸如腔室500，這可以允許面板（其可以是石英）被保護而不受含氟前驅物或其他前驅物的影響。
在操作810，電容耦合的電漿(「CCP」)以由輸送到腔室中的前驅物（諸如氧氣或含氧前驅物）產生。在實施方式中，電漿可以在CCP的電極之間產生，電極可以為噴淋頭，諸如上述的噴淋頭515、531。電漿可以含在或大體上含在石英面板之間，石英面板可以定位於用以產生CCP的電極之間。在實施方式中，電極可以是導電的噴淋頭，並且例如可以是鋁或氧化鋁或包括鋁或氧化鋁。另外，電漿可以不形成，或者可以在實施方式中在第一噴淋頭與第一介電質面板之間基本上不存在，諸如噴淋頭515和介電質面板521之間。
已經形成的電漿流出物可以在操作815從電漿處理區域流出。流出物可以流向或朝向容納半導體基板的處理區域。流出物可以流過腔室（諸如腔室500）的一或多個部件，並且可以流過介電質面板和/或噴淋頭。在實施方式中，噴淋頭可以是產生CCP的電極，諸如接地電極。在一些實施方式中，電漿流出物可不相互作用，或者可幾乎不與電極相互作用，該電漿流出物可以流過該電極。例如，諸如噴淋頭531的電極的孔可以經尺寸設定和/或被配置成限制它們與形成的電漿流出物相互作用。在實施方式中，與在其中不包括與噴淋頭配合的介電質面板的系統中（諸如在上述佈置的任一個佈置中）相比，電極可與電漿流出物具有更少的相互作用。在一些實施方式中，相互作用的量可能比其中不包括與噴淋頭配合的介電質面板的系統少10%。另外，相互作用的量可能比不包括與噴淋頭配合的介電質面板的系統少20%、少30%、少40%、少50%、少60%、少70%、少80%、少90%、或少100%。包括本技術的部件的系統可以更好控制電漿流出物的複合，該電漿流出物可以包括例如氧氣。
在上文描述中，為說明的目的，已闡明眾多詳述以提供對本技術的各實施方式的理解。然而，對於本領域技術人員來說顯而易見的是，某些實施方式可在沒有這些詳述的情況下，或在具有補充詳述的情況進行實踐。
已經揭示了若干實施方式，本領域技術人員將認識到，在不脫離實施方式的精神的情況下，可以使用各種修改、替代構造和同等物。另外，許多已知製程和元件尚未描述以避免對本技術的不必要的模糊。因此，上文描述將不應視為對本技術範圍的限制。
在提供數值範圍的情況下，應理解，除了上下文另有明確規定之外，在該範圍的上限和下限之間的每個中間值至下限單位元的最小部分亦被具體公開。介於任一該值之間，或介於該範圍內中的未述中間值與該範圍內的任何其他該值或中間值之間的較小範圍亦包括在內。這些較小範圍的上限與下限可各自涵蓋在此範圍內或排除在外，且本發明技術亦包括每一種包括在較小範圍中的上限和/或下限或不含上下限的範圍，取決於記載的範圍中的特別排除的限制。當記載的範圍包括該上下限的一個或兩個時，亦包括排除了那些所包括的上下限中一個或兩個的範圍。
如在本文中和所附申請專利範圍中使用的，除非在上下文中明確指出以外，單數形式「一」（「a」、「an」）和「該」（「the」）包括複數個引用。因此，例如，對「層」的引用包括多個此類層，對「前驅物」的引用包括對一或多個前驅物以及本領域技術人員已知的等同物的引用，等等。
此外，當在本說明書和所附權利要求中使用時，措詞「包含(comprise(s))」、「包含(comprising)」、「含有(contain(s))」、「含有(containing)」、「包括(include(s))」和「包括(including)」意欲指定該特徵、整數、部件或操作的存在，但其不排除一或多個其他特徵、整數、部件、操作、動作或群組的存在或添加。
100‧‧‧處理系統
104‧‧‧工廠介面
110‧‧‧傳送腔室
113‧‧‧傳送機構
116‧‧‧檢修腔室
117‧‧‧集成計量腔室
200‧‧‧處理腔室系統
202‧‧‧基板
205‧‧‧次級電極
207‧‧‧繼電器
208‧‧‧RF電源
210‧‧‧噴淋頭
215‧‧‧擋板
216‧‧‧第一進料氣體流
217‧‧‧熱交換器線圈
218‧‧‧分佈區
220‧‧‧介電質間隔物
223‧‧‧短劃線
224‧‧‧短劃線
225‧‧‧第一噴淋頭
227‧‧‧繼電器
228‧‧‧RF源
230‧‧‧介電質間隔物
240‧‧‧腔室壁
248‧‧‧高壓DC電源
249‧‧‧網眼
250‧‧‧卡盤
251‧‧‧升降機構
252‧‧‧RF發生器
253‧‧‧RF發生器
255‧‧‧波紋管
260‧‧‧閘閥
265‧‧‧渦輪分子泵
266‧‧‧渦輪分子泵
270‧‧‧第一電漿
276‧‧‧進氣口
278‧‧‧孔
280‧‧‧孔
281‧‧‧第二腔室區域
282‧‧‧孔
283‧‧‧孔
284‧‧‧第一腔室區域
290‧‧‧氣體分配系統
292‧‧‧電漿
325‧‧‧噴淋頭
365‧‧‧通孔
375‧‧‧小孔
400‧‧‧面板
410‧‧‧環形框
420‧‧‧板
465‧‧‧孔
500‧‧‧處理腔室
501‧‧‧入口
502‧‧‧蓋
503‧‧‧腔室外殼
507‧‧‧通道或孔
509‧‧‧面板
511‧‧‧混合區
515‧‧‧第一噴淋頭
517‧‧‧孔
519‧‧‧RF源
521‧‧‧介電質面板
523‧‧‧孔
525‧‧‧介電質面板
527‧‧‧孔
529‧‧‧間隔物
531‧‧‧噴淋頭
533‧‧‧孔
534‧‧‧電氣接地
535‧‧‧氣體分配元件
537‧‧‧容積
539‧‧‧嵌入式加熱器
540‧‧‧第一流體通道
545‧‧‧第二流體通道
547‧‧‧面板
549‧‧‧孔
550‧‧‧電漿處理區域
551‧‧‧腔室襯墊
555‧‧‧半導體基板
560‧‧‧處理區域
565‧‧‧台座
600‧‧‧介電質面板
610‧‧‧介電質材料
620‧‧‧孔
650‧‧‧噴淋頭
660‧‧‧板
670‧‧‧板
700‧‧‧面板
710‧‧‧介電質材料
720‧‧‧孔
730‧‧‧孔
750‧‧‧噴淋頭
800‧‧‧方法
805‧‧‧操作
810‧‧‧操作
815‧‧‧操作
105A-D‧‧‧箱裝載機
106A-B‧‧‧裝載閘腔室
108A-B‧‧‧機器人
113A‧‧‧基板傳送葉片
113B‧‧‧可伸長橋臂
114A-D‧‧‧處理腔室
透過參考本說明書和附圖的剩餘部分可實現對所公開技術的特性和優勢的進一步理解。
圖1示出根據本技術的實施方式的示例性處理系統的俯視平面圖。
圖2示出根據本技術的實施方式的示例性處理腔室的示意橫截面圖。
圖3示出根據所公開技術的實施方式的示例性噴淋頭的仰視平面圖。
圖4示出根據所公開技術的實施方式的示例性面板的平面圖。
圖5示出根據本技術的實施方式的處理腔室的橫截面圖。
圖6A示出根據本技術的實施方式的示例性面板的俯視平面圖。
圖6B示出根據本技術的實施方式的示例性噴淋頭和面板的仰視平面圖。
圖7A示出根據本技術的實施方式的示例性面板的俯視平面圖。
圖7B示出根據本技術的實施方式的示例性噴淋頭的仰視平面圖。
圖8示出根據本技術的實施方式的示例性方法的操作。
一些圖被包括為示意圖。應理解附圖用於說明的目的，除非專門說明是按比例的，否則不應被視為按比例的。另外，作為示意圖，附圖被提供以協助理解，並且相比於實際描述可能不包括全部態樣或資訊，以及可以包括用於說明目的的額外或放大的材料。
在附圖中，類似元件和/或特徵可具有相同的附圖標記。另外，可以透過在附圖標記之後緊跟在相似部件之間區分的字母來區分相同類型的各部件。若只在本說明書中使用第一附圖標記，則描述適用於具有相同的第一附圖標記的類似部件的任一者，而與字母無關。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無

Claims (20)

  1. 一種半導體處理腔室，包括： 一腔室外殼，至少部分地界定該半導體處理腔室的一內部區域，其中該腔室外殼包括一蓋；一台座，被配置成在該半導體處理腔室的一處理區域內支撐一基板；一第一噴淋頭，與一電源耦接，其中該第一噴淋頭定位於該蓋與該處理區域之間的該半導體處理腔室內；一第一介電質面板，定位於該第一噴淋頭與該處理區域之間的該半導體處理腔室內；一第二噴淋頭，與電氣接地耦接並且位於該第一介電質面板與該處理區域之間的該半導體處理腔室內；以及第二介電質面板，定位於該第一介電質面板與該第二噴淋頭之間的該半導體處理腔室內。
  2. 如請求項1所述的半導體處理腔室，其中該第一介電質面板和該第二介電質面板包括石英。
  3. 如請求項1所述的半導體處理腔室，進一步包括定位於該第一介電質面板與該第二介電質面板之間的一介電質間隔物。
  4. 如請求項3所述的半導體處理腔室，其中該介電質間隔物包括一環形間隔物，該環形間隔物定位於該第一介電質面板與該第二介電質面板之間並且接觸該第一介電質面板和該第二介電質面板的每個。
  5. 如請求項4所述的半導體處理腔室，其中該第一介電質面板、該第二介電質面板和該間隔物界定在該半導體處理腔室內的一電漿處理區域，其中該電漿處理區域被配置成至少部分地包含在該第一噴淋頭與該第二噴淋頭之間產生的一電漿。
  6. 如請求項5所述的半導體處理腔室，其中該電漿處理區域被配置成基本上含有在該第一介電質面板與該第二介電質面板之間的該電漿。
  7. 如請求項1所述的半導體處理腔室，其中該第一噴淋頭和該第二噴淋頭包括一金屬氧化物。
  8. 如請求項1所述的半導體處理腔室，其中在該半導體處理腔室的該內部區域內、在該第一噴淋頭與該第一介電質面板之間的一間距小於在該半導體處理腔室內可形成的一電漿的一德拜長度。
  9. 如請求項8所述的半導體處理腔室，其中該間距小於或約0.7毫米。
  10. 如請求項1所述的半導體處理腔室，其中該第二介電質面板界定第一多個孔，以及其中該第二噴淋頭界定第二多個孔，並且其中該第一多個孔的每個孔被表徵為一直徑小於該第二多個孔的每個孔的一直徑。
  11. 如請求項10所述的半導體處理腔室，其中該第一多個孔的每個孔與該第二多個孔的一孔的至少一部分軸向對準。
  12. 如請求項10所述的半導體處理腔室，其中該第一多個孔被表徵為至少兩個孔的分組，以及其中每個分組的一中心軸與該第二多個孔的一孔的一中心軸軸向對準。
  13. 如請求項10所述的半導體處理腔室，其中該第一多個孔包括至少或約2,000個孔，以及其中該第二多個孔包括少於或約1,200個孔。
  14. 如請求項13所述的半導體處理腔室，其中該第一多個孔包括至少或約5,000個孔，以及其中該第二多個孔包括少於或約1,000個孔。
  15. 一種形成一含氧電漿的方法，該方法包括以下步驟： 將一含氧前驅物輸送到一半導體處理腔室，該半導體處理腔室包括： 一腔室外殼，至少部分地界定該半導體處理腔室的一內部區域，其中該腔室外殼包括一蓋， 一台座，被配置成在該半導體處理腔室的一處理區域內支撐一基板； 一第一噴淋頭，與一電源耦接，其中該第一噴淋頭定位於該蓋與該處理區域之間的該半導體處理腔室內； 一第一介電質面板，定位於該第一噴淋頭與該處理區域之間的該半導體處理腔室內， 一第二噴淋頭，與電氣接地耦接並且定位於在該第一介電質面板與該處理區域之間的該半導體處理腔室內，以及 一第二介電質面板，定位於該第一介電質面板與該第二噴淋頭之間的該半導體處理腔室內；以及 在該第一噴淋頭與該第二噴淋頭之間由該含氧前驅物產生一電容耦合的電漿。
  16. 如請求項15所述的形成一含氧電漿的方法，其中該電漿在該第一噴淋頭和該第一介電質面板之間基本上不存在。
  17. 如請求項15所述的形成一含氧電漿的方法，其中所產生的電漿的電漿流出物朝向該半導體處理腔室的該處理區域流過該第二介電質面板和第二噴淋頭。
  18. 如請求項17所述的形成一含氧電漿的方法，其中該電漿流出物的一大多數不與該第二噴淋頭相互作用。
  19. 如請求項15所述的形成一含氧電漿的方法，其中該第一噴淋頭和該第二噴淋頭包括氧化鋁。
  20. 一種半導體處理腔室，包括： 一腔室外殼，至少部分地界定該半導體處理腔室的一內部區域，其中該腔室外殼包括一蓋； 一台座，被配置成在該半導體處理腔室的一處理區域內支撐一基板； 一第一噴淋頭，與一電源耦接，其中該第一噴淋頭定位於該蓋與該處理區域之間的該半導體處理腔室內，並且其中該第一噴淋頭包括一金屬氧化物； 一第一石英面板，定位於該第一噴淋頭與該處理區域之間的該半導體處理腔室內； 一第二噴淋頭，與電氣接地耦接並且定位於該第一介電質面板與該處理區域之間的該半導體處理腔室內，並且其中該第一噴淋頭包括一金屬氧化物； 一第二石英面板，定位於該第一介電質面板與該第二噴淋頭之間的該半導體處理腔室內；以及 一介電質間隔物，定位於該第一石英面板與該第二石英面板之間並且接觸該第一石英面板和該第二石英面板的每個。
TW106130704A 2016-10-04 2017-09-08 氧氣相容電漿源 TW201824334A (zh)

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US20180096865A1 (en) 2018-04-05
KR20180037570A (ko) 2018-04-12
CN207690763U (zh) 2018-08-03
CN107895700A (zh) 2018-04-10
JP2018082149A (ja) 2018-05-24
TWM564818U (zh) 2018-08-01
US20180366351A1 (en) 2018-12-20

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