JP2021523292A - ３ｄ ｎａｎｄ構造内にタングステンおよび他の金属を堆積させる方法 - Google Patents

３ｄ ｎａｎｄ構造内にタングステンおよび他の金属を堆積させる方法 Download PDF

Info

Publication number
JP2021523292A
JP2021523292A JP2020561743A JP2020561743A JP2021523292A JP 2021523292 A JP2021523292 A JP 2021523292A JP 2020561743 A JP2020561743 A JP 2020561743A JP 2020561743 A JP2020561743 A JP 2020561743A JP 2021523292 A JP2021523292 A JP 2021523292A
Authority
JP
Japan
Prior art keywords
pulse
tungsten
metal precursor
pulses
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2020561743A
Other languages
English (en)
Japanese (ja)
Other versions
JP2021523292A5 (https=
JPWO2019213604A5 (https=
Inventor
ブテイル・ゴラン
コリンズ・ジョシュア
バムノルカー・ハンナ
ヴァラダラジャン・セシャサイー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of JP2021523292A publication Critical patent/JP2021523292A/ja
Publication of JP2021523292A5 publication Critical patent/JP2021523292A5/ja
Publication of JPWO2019213604A5 publication Critical patent/JPWO2019213604A5/ja
Priority to JP2024114404A priority Critical patent/JP2024147716A/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C23C16/14—Deposition of only one other metal element
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01342—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid by deposition, e.g. evaporation, ALD or laser deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP2020561743A 2018-05-03 2019-05-03 ３ｄ ｎａｎｄ構造内にタングステンおよび他の金属を堆積させる方法 Pending JP2021523292A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024114404A JP2024147716A (ja) 2018-05-03 2024-07-18 ３ｄ ｎａｎｄ構造内にタングステンおよび他の金属を堆積させる方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862666588P 2018-05-03 2018-05-03
US62/666,588 2018-05-03
PCT/US2019/030712 WO2019213604A1 (en) 2018-05-03 2019-05-03 Method of depositing tungsten and other metals in 3d nand structures

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024114404A Division JP2024147716A (ja) 2018-05-03 2024-07-18 ３ｄ ｎａｎｄ構造内にタングステンおよび他の金属を堆積させる方法

Publications (3)

Publication Number Publication Date
JP2021523292A true JP2021523292A (ja) 2021-09-02
JP2021523292A5 JP2021523292A5 (https=) 2022-05-02
JPWO2019213604A5 JPWO2019213604A5 (https=) 2022-05-02

Family

ID=68386126

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2020561743A Pending JP2021523292A (ja) 2018-05-03 2019-05-03 ３ｄ ｎａｎｄ構造内にタングステンおよび他の金属を堆積させる方法
JP2024114404A Pending JP2024147716A (ja) 2018-05-03 2024-07-18 ３ｄ ｎａｎｄ構造内にタングステンおよび他の金属を堆積させる方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2024114404A Pending JP2024147716A (ja) 2018-05-03 2024-07-18 ３ｄ ｎａｎｄ構造内にタングステンおよび他の金属を堆積させる方法

Country Status (5)

Country Link
US (1) US11549175B2 (https=)
JP (2) JP2021523292A (https=)
KR (1) KR102806630B1 (https=)
CN (1) CN112262457A (https=)
WO (1) WO2019213604A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2022130559A1 (https=) * 2020-12-17 2022-06-23
JP2023510607A (ja) * 2020-01-16 2023-03-14 インテグリス・インコーポレーテッド エッチングまたは堆積のための方法
JP2023135391A (ja) * 2022-03-15 2023-09-28 キオクシア株式会社 成膜方法及び成膜装置

Families Citing this family (263)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12444651B2 (en) 2009-08-04 2025-10-14 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10343920B2 (en) 2016-03-18 2019-07-09 Asm Ip Holding B.V. Aligned carbon nanotubes
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10573522B2 (en) 2016-08-16 2020-02-25 Lam Research Corporation Method for preventing line bending during metal fill process
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
KR102546317B1 (ko) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기체 공급 유닛 및 이를 포함하는 기판 처리 장치
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US12040200B2 (en) 2017-06-20 2024-07-16 Asm Ip Holding B.V. Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
KR20190009245A (ko) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
TWI815813B (zh) 2017-08-04 2023-09-21 荷蘭商Ａｓｍ智慧財產控股公司 用於分配反應腔內氣體的噴頭總成
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
KR20250073535A (ko) 2017-08-14 2025-05-27 램 리써치 코포레이션 3차원 수직 nand 워드라인을 위한 금속 충진 프로세스
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
CN111316417B (zh) 2017-11-27 2023-12-22 阿斯莫Ip控股公司 与批式炉偕同使用的用于储存晶圆匣的储存装置
KR102633318B1 (ko) 2017-11-27 2024-02-05 에이에스엠 아이피 홀딩 비.브이. 청정 소형 구역을 포함한 장치
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
KR102695659B1 (ko) 2018-01-19 2024-08-14 에이에스엠 아이피 홀딩 비.브이. 플라즈마 보조 증착에 의해 갭 충진 층을 증착하는 방법
TWI799494B (zh) 2018-01-19 2023-04-21 荷蘭商Ａｓｍ 智慧財產控股公司 沈積方法
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US11685991B2 (en) 2018-02-14 2023-06-27 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10731249B2 (en) 2018-02-15 2020-08-04 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
KR102636427B1 (ko) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 장치
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
KR102646467B1 (ko) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조
KR102600229B1 (ko) 2018-04-09 2023-11-10 에이에스엠 아이피 홀딩 비.브이. 기판 지지 장치, 이를 포함하는 기판 처리 장치 및 기판 처리 방법
US12025484B2 (en) 2018-05-08 2024-07-02 Asm Ip Holding B.V. Thin film forming method
US12272527B2 (en) 2018-05-09 2025-04-08 Asm Ip Holding B.V. Apparatus for use with hydrogen radicals and method of using same
KR102596988B1 (ko) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 그에 의해 제조된 장치
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
KR102568797B1 (ko) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 시스템
CN120591748A (zh) 2018-06-27 2025-09-05 Asm Ip私人控股有限公司 用于形成含金属的材料的循环沉积方法及膜和结构
US11492703B2 (en) 2018-06-27 2022-11-08 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
KR102707956B1 (ko) 2018-09-11 2024-09-19 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
CN110970344B (zh) 2018-10-01 2024-10-25 Asmip控股有限公司 衬底保持设备、包含所述设备的系统及其使用方法
KR102592699B1 (ko) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치
KR102546322B1 (ko) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
US12378665B2 (en) 2018-10-26 2025-08-05 Asm Ip Holding B.V. High temperature coatings for a preclean and etch apparatus and related methods
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR102748291B1 (ko) 2018-11-02 2024-12-31 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 기판 처리 장치
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
KR20250116174A (ko) 2018-11-19 2025-07-31 램 리써치 코포레이션 텅스텐을 위한 몰리브덴 템플릿들
US12040199B2 (en) 2018-11-28 2024-07-16 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (ko) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치를 세정하는 방법
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
JP7504584B2 (ja) 2018-12-14 2024-06-24 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム
WO2020123987A1 (en) 2018-12-14 2020-06-18 Lam Research Corporation Atomic layer deposition on 3d nand structures
TWI866480B (zh) 2019-01-17 2024-12-11 荷蘭商Ａｓｍ Ｉｐ 私人控股有限公司 藉由循環沈積製程於基板上形成含過渡金屬膜之方法
SG11202108217UA (en) 2019-01-28 2021-08-30 Lam Res Corp Deposition of metal films
US11482533B2 (en) 2019-02-20 2022-10-25 Asm Ip Holding B.V. Apparatus and methods for plug fill deposition in 3-D NAND applications
JP7509548B2 (ja) 2019-02-20 2024-07-02 エーエスエム・アイピー・ホールディング・ベー・フェー 基材表面内に形成された凹部を充填するための周期的堆積方法および装置
TWI873122B (zh) 2019-02-20 2025-02-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 填充一基板之一表面內所形成的一凹槽的方法、根據其所形成之半導體結構、及半導體處理設備
TWI842826B (zh) 2019-02-22 2024-05-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基材處理設備及處理基材之方法
KR102858005B1 (ko) 2019-03-08 2025-09-09 에이에스엠 아이피 홀딩 비.브이. 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체
US11742198B2 (en) 2019-03-08 2023-08-29 Asm Ip Holding B.V. Structure including SiOCN layer and method of forming same
SG11202109796QA (en) 2019-03-11 2021-10-28 Lam Res Corp Precursors for deposition of molybdenum-containing films
KR20200116033A (ko) 2019-03-28 2020-10-08 에이에스엠 아이피 홀딩 비.브이. 도어 개방기 및 이를 구비한 기판 처리 장치
KR102809999B1 (ko) 2019-04-01 2025-05-19 에이에스엠 아이피 홀딩 비.브이. 반도체 소자를 제조하는 방법
WO2020210260A1 (en) 2019-04-11 2020-10-15 Lam Research Corporation High step coverage tungsten deposition
US11447864B2 (en) * 2019-04-19 2022-09-20 Asm Ip Holding B.V. Layer forming method and apparatus
WO2020214732A1 (en) * 2019-04-19 2020-10-22 Lam Research Corporation Rapid flush purging during atomic layer deposition
KR20200125453A (ko) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. 기상 반응기 시스템 및 이를 사용하는 방법
KR102929471B1 (ko) 2019-05-07 2026-02-20 에이에스엠 아이피 홀딩 비.브이. 딥 튜브가 있는 화학물질 공급원 용기
KR102929472B1 (ko) 2019-05-10 2026-02-20 에이에스엠 아이피 홀딩 비.브이. 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조
JP7598201B2 (ja) 2019-05-16 2024-12-11 エーエスエム・アイピー・ホールディング・ベー・フェー ウェハボートハンドリング装置、縦型バッチ炉および方法
JP7612342B2 (ja) 2019-05-16 2025-01-14 エーエスエム・アイピー・ホールディング・ベー・フェー ウェハボートハンドリング装置、縦型バッチ炉および方法
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
US12237221B2 (en) 2019-05-22 2025-02-25 Lam Research Corporation Nucleation-free tungsten deposition
KR20200141002A (ko) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법
KR102918757B1 (ko) 2019-06-10 2026-01-28 에이에스엠 아이피 홀딩 비.브이. 석영 에피택셜 챔버를 세정하는 방법
KR20200143254A (ko) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조
KR102911421B1 (ko) 2019-07-03 2026-01-12 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법
JP7499079B2 (ja) 2019-07-09 2024-06-13 エーエスエム・アイピー・ホールディング・ベー・フェー 同軸導波管を用いたプラズマ装置、基板処理方法
CN112216646B (zh) 2019-07-10 2026-02-10 Asmip私人控股有限公司 基板支撑组件及包括其的基板处理装置
KR102895115B1 (ko) 2019-07-16 2025-12-03 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
TWI826704B (zh) 2019-07-17 2023-12-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 自由基輔助引燃電漿系統和方法
KR102860110B1 (ko) 2019-07-17 2025-09-16 에이에스엠 아이피 홀딩 비.브이. 실리콘 게르마늄 구조를 형성하는 방법
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
KR102903090B1 (ko) 2019-07-19 2025-12-19 에이에스엠 아이피 홀딩 비.브이. 토폴로지-제어된 비정질 탄소 중합체 막을 형성하는 방법
CN112309843B (zh) 2019-07-29 2026-01-23 Asmip私人控股有限公司 实现高掺杂剂掺入的选择性沉积方法
CN112309900B (zh) 2019-07-30 2025-11-04 Asmip私人控股有限公司 基板处理设备
CN112309899B (zh) 2019-07-30 2025-11-14 Asmip私人控股有限公司 基板处理设备
US12169361B2 (en) 2019-07-30 2024-12-17 Asm Ip Holding B.V. Substrate processing apparatus and method
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
CN112323048B (zh) 2019-08-05 2024-02-09 Asm Ip私人控股有限公司 用于化学源容器的液位传感器
KR20210018761A (ko) 2019-08-09 2021-02-18 에이에스엠 아이피 홀딩 비.브이. 냉각 장치를 포함한 히터 어셈블리 및 이를 사용하는 방법
WO2021030836A1 (en) 2019-08-12 2021-02-18 Lam Research Corporation Tungsten deposition
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
JP7810514B2 (ja) 2019-08-21 2026-02-03 エーエスエム・アイピー・ホールディング・ベー・フェー 成膜原料混合ガス生成装置及び成膜装置
KR20210024423A (ko) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 홀을 구비한 구조체를 형성하기 위한 방법
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
KR102928101B1 (ko) 2019-08-23 2026-02-13 에이에스엠 아이피 홀딩 비.브이. 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
JP2022546404A (ja) 2019-08-28 2022-11-04 ラム リサーチ コーポレーション 金属の堆積
US12334351B2 (en) 2019-09-03 2025-06-17 Lam Research Corporation Molybdenum deposition
KR102868968B1 (ko) 2019-09-03 2025-10-10 에이에스엠 아이피 홀딩 비.브이. 칼코지나이드 막 및 상기 막을 포함한 구조체를 증착하기 위한 방법 및 장치
KR102806450B1 (ko) 2019-09-04 2025-05-12 에이에스엠 아이피 홀딩 비.브이. 희생 캡핑 층을 이용한 선택적 증착 방법
KR102733104B1 (ko) 2019-09-05 2024-11-22 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US12469693B2 (en) 2019-09-17 2025-11-11 Asm Ip Holding B.V. Method of forming a carbon-containing layer and structure including the layer
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (zh) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法
TW202128273A (zh) 2019-10-08 2021-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氣體注入系統、及將材料沉積於反應室內之基板表面上的方法
KR102948143B1 (ko) 2019-10-08 2026-04-07 에이에스엠 아이피 홀딩 비.브이. 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법
TWI846953B (zh) 2019-10-08 2024-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理裝置
TWI846966B (zh) 2019-10-10 2024-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成光阻底層之方法及包括光阻底層之結構
US12009241B2 (en) 2019-10-14 2024-06-11 Asm Ip Holding B.V. Vertical batch furnace assembly with detector to detect cassette
WO2021076636A1 (en) 2019-10-15 2021-04-22 Lam Research Corporation Molybdenum fill
TWI834919B (zh) 2019-10-16 2024-03-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氧化矽之拓撲選擇性膜形成之方法
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR102845724B1 (ko) 2019-10-21 2025-08-13 에이에스엠 아이피 홀딩 비.브이. 막을 선택적으로 에칭하기 위한 장치 및 방법
KR20210050453A (ko) 2019-10-25 2021-05-07 에이에스엠 아이피 홀딩 비.브이. 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR102890638B1 (ko) 2019-11-05 2025-11-25 에이에스엠 아이피 홀딩 비.브이. 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR102861314B1 (ko) 2019-11-20 2025-09-17 에이에스엠 아이피 홀딩 비.브이. 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템
CN112951697B (zh) 2019-11-26 2025-07-29 Asmip私人控股有限公司 基板处理设备
US11450529B2 (en) 2019-11-26 2022-09-20 Asm Ip Holding B.V. Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
CN112885692B (zh) 2019-11-29 2025-08-15 Asmip私人控股有限公司 基板处理设备
CN120432376A (zh) 2019-11-29 2025-08-05 Asm Ip私人控股有限公司 基板处理设备
JP7527928B2 (ja) 2019-12-02 2024-08-05 エーエスエム・アイピー・ホールディング・ベー・フェー 基板処理装置、基板処理方法
KR20210070898A (ko) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11885013B2 (en) 2019-12-17 2024-01-30 Asm Ip Holding B.V. Method of forming vanadium nitride layer and structure including the vanadium nitride layer
US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
TWI887322B (zh) 2020-01-06 2025-06-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 反應器系統、抬升銷、及處理方法
KR20210089077A (ko) 2020-01-06 2021-07-15 에이에스엠 아이피 홀딩 비.브이. 가스 공급 어셈블리, 이의 구성 요소, 및 이를 포함하는 반응기 시스템
US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
KR102882467B1 (ko) 2020-01-16 2025-11-05 에이에스엠 아이피 홀딩 비.브이. 고 종횡비 피처를 형성하는 방법
KR102675856B1 (ko) 2020-01-20 2024-06-17 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법 및 박막 표면 개질 방법
TWI889744B (zh) 2020-01-29 2025-07-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 污染物捕集系統、及擋板堆疊
TW202513845A (zh) 2020-02-03 2025-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 半導體裝置結構及其形成方法
TWI908758B (zh) 2020-02-04 2025-12-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 驗證一物品之方法、用於驗證一物品之設備、及用於驗證一反應室之系統
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
KR102916725B1 (ko) 2020-02-13 2026-01-23 에이에스엠 아이피 홀딩 비.브이. 수광 장치를 포함하는 기판 처리 장치 및 수광 장치의 교정 방법
KR20210103953A (ko) 2020-02-13 2021-08-24 에이에스엠 아이피 홀딩 비.브이. 가스 분배 어셈블리 및 이를 사용하는 방법
US11781243B2 (en) 2020-02-17 2023-10-10 Asm Ip Holding B.V. Method for depositing low temperature phosphorous-doped silicon
TWI895326B (zh) 2020-02-28 2025-09-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 專用於零件清潔的系統
KR102943116B1 (ko) 2020-03-04 2026-03-23 에이에스엠 아이피 홀딩 비.브이. 반응기 시스템용 정렬 고정구
US11876356B2 (en) 2020-03-11 2024-01-16 Asm Ip Holding B.V. Lockout tagout assembly and system and method of using same
KR20210116240A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 조절성 접합부를 갖는 기판 핸들링 장치
CN113394086A (zh) 2020-03-12 2021-09-14 Asm Ip私人控股有限公司 用于制造具有目标拓扑轮廓的层结构的方法
US12173404B2 (en) 2020-03-17 2024-12-24 Asm Ip Holding B.V. Method of depositing epitaxial material, structure formed using the method, and system for performing the method
KR102755229B1 (ko) 2020-04-02 2025-01-14 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법
TWI887376B (zh) 2020-04-03 2025-06-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 半導體裝置的製造方法
FR3108920B1 (fr) * 2020-04-07 2022-07-22 Commissariat Energie Atomique Procede de depot d’un film metallique de tungstene ou de molybdene par ald
TWI888525B (zh) 2020-04-08 2025-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於選擇性蝕刻氧化矽膜之設備及方法
KR20210127620A (ko) 2020-04-13 2021-10-22 에이에스엠 아이피 홀딩 비.브이. 질소 함유 탄소 막을 형성하는 방법 및 이를 수행하기 위한 시스템
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
KR20210128343A (ko) 2020-04-15 2021-10-26 에이에스엠 아이피 홀딩 비.브이. 크롬 나이트라이드 층을 형성하는 방법 및 크롬 나이트라이드 층을 포함하는 구조
US11996289B2 (en) 2020-04-16 2024-05-28 Asm Ip Holding B.V. Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
TW202143328A (zh) 2020-04-21 2021-11-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於調整膜應力之方法
KR20210132600A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템
KR102866804B1 (ko) 2020-04-24 2025-09-30 에이에스엠 아이피 홀딩 비.브이. 냉각 가스 공급부를 포함한 수직형 배치 퍼니스 어셈블리
KR20210132612A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 바나듐 화합물들을 안정화하기 위한 방법들 및 장치
CN113555279A (zh) 2020-04-24 2021-10-26 Asm Ip私人控股有限公司 形成含氮化钒的层的方法及包含其的结构
KR102934380B1 (ko) 2020-04-24 2026-03-05 에이에스엠 아이피 홀딩 비.브이. 바나듐 보라이드 및 바나듐 포스파이드 층을 포함한 구조체를 형성하는 방법
KR102783898B1 (ko) 2020-04-29 2025-03-18 에이에스엠 아이피 홀딩 비.브이. 고체 소스 전구체 용기
KR20210134869A (ko) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Foup 핸들러를 이용한 foup의 빠른 교환
JP7726664B2 (ja) 2020-05-04 2025-08-20 エーエスエム・アイピー・ホールディング・ベー・フェー 基板を処理するための基板処理システム
JP7736446B2 (ja) 2020-05-07 2025-09-09 エーエスエム・アイピー・ホールディング・ベー・フェー 同調回路を備える反応器システム
KR20210137395A (ko) 2020-05-07 2021-11-17 에이에스엠 아이피 홀딩 비.브이. 불소계 라디칼을 이용하여 반응 챔버의 인시츄 식각을 수행하기 위한 장치 및 방법
KR102788543B1 (ko) 2020-05-13 2025-03-27 에이에스엠 아이피 홀딩 비.브이. 반응기 시스템용 레이저 정렬 고정구
KR102936676B1 (ko) 2020-05-15 2026-03-10 에이에스엠 아이피 홀딩 비.브이. 다중 전구체를 사용하여 실리콘 게르마늄 균일도를 제어하기 위한 방법
JP7433132B2 (ja) * 2020-05-19 2024-02-19 東京エレクトロン株式会社 成膜方法及び成膜装置
TWI911214B (zh) 2020-05-19 2026-01-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基材處理設備
KR102795476B1 (ko) 2020-05-21 2025-04-11 에이에스엠 아이피 홀딩 비.브이. 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법
KR20210145079A (ko) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. 기판을 처리하기 위한 플랜지 및 장치
KR102702526B1 (ko) 2020-05-22 2024-09-03 에이에스엠 아이피 홀딩 비.브이. 과산화수소를 사용하여 박막을 증착하기 위한 장치
KR20210146802A (ko) 2020-05-26 2021-12-06 에이에스엠 아이피 홀딩 비.브이. 붕소 및 갈륨을 함유한 실리콘 게르마늄 층을 증착하는 방법
TWI876048B (zh) 2020-05-29 2025-03-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
TW202212620A (zh) 2020-06-02 2022-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 處理基板之設備、形成膜之方法、及控制用於處理基板之設備之方法
KR20210156219A (ko) 2020-06-16 2021-12-24 에이에스엠 아이피 홀딩 비.브이. 붕소를 함유한 실리콘 게르마늄 층을 증착하는 방법
TWI908816B (zh) 2020-06-24 2025-12-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成含矽層之方法
TWI873359B (zh) 2020-06-30 2025-02-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
TW202202649A (zh) 2020-07-08 2022-01-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
TWI864307B (zh) 2020-07-17 2024-12-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於光微影之結構、方法與系統
TWI878570B (zh) 2020-07-20 2025-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於沉積鉬層之方法及系統
KR20220011092A (ko) 2020-07-20 2022-01-27 에이에스엠 아이피 홀딩 비.브이. 전이 금속층을 포함하는 구조체를 형성하기 위한 방법 및 시스템
US12322591B2 (en) 2020-07-27 2025-06-03 Asm Ip Holding B.V. Thin film deposition process
KR20220020210A (ko) 2020-08-11 2022-02-18 에이에스엠 아이피 홀딩 비.브이. 기판 상에 티타늄 알루미늄 카바이드 막 구조체 및 관련 반도체 구조체를 증착하는 방법
KR102915124B1 (ko) 2020-08-14 2026-01-19 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
US12040177B2 (en) 2020-08-18 2024-07-16 Asm Ip Holding B.V. Methods for forming a laminate film by cyclical plasma-enhanced deposition processes
TWI911263B (zh) 2020-08-25 2026-01-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 清潔基板的方法、選擇性沉積的方法、及反應器系統
TW202534193A (zh) 2020-08-26 2025-09-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成金屬氧化矽層及金屬氮氧化矽層的方法
TWI911265B (zh) 2020-08-27 2026-01-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成圖案化結構的方法、操控機械特性的方法、及裝置結構
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
KR20220036866A (ko) 2020-09-16 2022-03-23 에이에스엠 아이피 홀딩 비.브이. 실리콘 산화물 증착 방법
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
TWI889903B (zh) 2020-09-25 2025-07-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
US12009224B2 (en) 2020-09-29 2024-06-11 Asm Ip Holding B.V. Apparatus and method for etching metal nitrides
KR20220045900A (ko) 2020-10-06 2022-04-13 에이에스엠 아이피 홀딩 비.브이. 실리콘 함유 재료를 증착하기 위한 증착 방법 및 장치
TW202229612A (zh) 2020-10-06 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 在部件的側壁上形成氮化矽的方法及系統
CN114293174A (zh) 2020-10-07 2022-04-08 Asm Ip私人控股有限公司 气体供应单元和包括气体供应单元的衬底处理设备
KR102855834B1 (ko) 2020-10-14 2025-09-04 에이에스엠 아이피 홀딩 비.브이. 단차형 구조 상에 재료를 증착하는 방법
KR102873665B1 (ko) 2020-10-15 2025-10-17 에이에스엠 아이피 홀딩 비.브이. 반도체 소자의 제조 방법, 및 ether-cat을 사용하는 기판 처리 장치
KR20220053482A (ko) 2020-10-22 2022-04-29 에이에스엠 아이피 홀딩 비.브이. 바나듐 금속을 증착하는 방법, 구조체, 소자 및 증착 어셈블리
TW202223136A (zh) 2020-10-28 2022-06-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於在基板上形成層之方法、及半導體處理系統
TW202229620A (zh) 2020-11-12 2022-08-01 特文特大學 沉積系統、用於控制反應條件之方法、沉積方法
TW202229795A (zh) 2020-11-23 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 具注入器之基板處理設備
TW202235649A (zh) 2020-11-24 2022-09-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 填充間隙之方法與相關之系統及裝置
KR20220076343A (ko) 2020-11-30 2022-06-08 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치의 반응 챔버 내에 배열되도록 구성된 인젝터
KR20220077875A (ko) 2020-12-02 2022-06-09 에이에스엠 아이피 홀딩 비.브이. 샤워헤드 어셈블리용 세정 고정구
US12255053B2 (en) 2020-12-10 2025-03-18 Asm Ip Holding B.V. Methods and systems for depositing a layer
US12159788B2 (en) 2020-12-14 2024-12-03 Asm Ip Holding B.V. Method of forming structures for threshold voltage control
CN114639631A (zh) 2020-12-16 2022-06-17 Asm Ip私人控股有限公司 跳动和摆动测量固定装置
TW202232639A (zh) 2020-12-18 2022-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 具有可旋轉台的晶圓處理設備
KR20220090438A (ko) 2020-12-22 2022-06-29 에이에스엠 아이피 홀딩 비.브이. 전이금속 증착 방법
TW202226899A (zh) 2020-12-22 2022-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 具匹配器的電漿處理裝置
KR20220090435A (ko) 2020-12-22 2022-06-29 에이에스엠 아이피 홀딩 비.브이. 전구체 캡슐, 용기 및 방법
JP7686761B2 (ja) 2021-02-23 2025-06-02 ラム リサーチ コーポレーション ３ｄ－ｎａｎｄ用の酸化物表面上へのモリブデン膜の堆積
WO2022221210A1 (en) 2021-04-14 2022-10-20 Lam Research Corporation Deposition of molybdenum
JP7733133B2 (ja) 2021-05-07 2025-09-02 インテグリス・インコーポレーテッド モリブデンまたはタングステン材料の堆積方法
USD1023959S1 (en) 2021-05-11 2024-04-23 Asm Ip Holding B.V. Electrode for substrate processing apparatus
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
CN115702474A (zh) 2021-05-14 2023-02-14 朗姆研究公司 高选择性掺杂硬掩模膜
JP2023036399A (ja) * 2021-09-02 2023-03-14 キオクシア株式会社 半導体装置及び半導体記憶装置と半導体装置の製造方法
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate
USD1099184S1 (en) 2021-11-29 2025-10-21 Asm Ip Holding B.V. Weighted lift pin
USD1060598S1 (en) 2021-12-03 2025-02-04 Asm Ip Holding B.V. Split showerhead cover
US12159804B2 (en) * 2022-03-09 2024-12-03 Applied Materials, Inc. Tungsten molybdenum structures
CN116926495A (zh) * 2022-04-02 2023-10-24 中微半导体设备(上海)股份有限公司 一种半导体设备及其基片处理方法
KR20250108659A (ko) * 2022-11-10 2025-07-15 램 리써치 코포레이션 낮은 플루오린 wn 증착을 위한 펄스 ald 시퀀스
US12595556B2 (en) 2023-03-02 2026-04-07 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Molybdenum imido alkyl/allyl complexes for deposition of molybdenum-containing films
CN121472832A (zh) * 2026-01-09 2026-02-06 宸微设备科技(苏州)有限公司 沉积方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017053024A (ja) * 2015-08-07 2017-03-16 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ タングステン堆積充填の強化のためのタングステンの原子層エッチング
US20170306479A1 (en) * 2016-04-21 2017-10-26 Asm Ip Holding B.V. Deposition of metal borides and silicides
US20170306490A1 (en) * 2016-04-25 2017-10-26 Applied Materials, Inc. Enhanced Spatial ALD Of Metals Through Controlled Precursor Mixing

Family Cites Families (350)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI117944B (fi) 1999-10-15 2007-04-30 Asm Int Menetelmä siirtymämetallinitridiohutkalvojen kasvattamiseksi
US6482262B1 (en) 1959-10-10 2002-11-19 Asm Microchemistry Oy Deposition of transition metal carbides
JPS5629648A (en) 1979-08-16 1981-03-25 Toshiba Tungaloy Co Ltd High hardness sintered body
JPS62216224A (ja) 1986-03-17 1987-09-22 Fujitsu Ltd タングステンの選択成長方法
JPS62260340A (ja) 1986-05-06 1987-11-12 Toshiba Corp 半導体装置の製造方法
US4746375A (en) 1987-05-08 1988-05-24 General Electric Company Activation of refractory metal surfaces for electroless plating
US4962063A (en) 1988-11-10 1990-10-09 Applied Materials, Inc. Multistep planarized chemical vapor deposition process with the use of low melting inorganic material for flowing while depositing
JPH02187031A (ja) 1989-01-14 1990-07-23 Sharp Corp 半導体装置
US5250329A (en) 1989-04-06 1993-10-05 Microelectronics And Computer Technology Corporation Method of depositing conductive lines on a dielectric
GB8907898D0 (en) 1989-04-07 1989-05-24 Inmos Ltd Semiconductor devices and fabrication thereof
US5028565A (en) 1989-08-25 1991-07-02 Applied Materials, Inc. Process for CVD deposition of tungsten layer on semiconductor wafer
EP0437110B1 (en) 1990-01-08 2001-07-11 Lsi Logic Corporation Structure for filtering process gases for use with a chemical vapour deposition chamber
KR100209856B1 (ko) 1990-08-31 1999-07-15 가나이 쓰도무 반도체장치의 제조방법
JPH04142061A (ja) 1990-10-02 1992-05-15 Sony Corp タングステンプラグの形成方法
US5250467A (en) 1991-03-29 1993-10-05 Applied Materials, Inc. Method for forming low resistance and low defect density tungsten contacts to silicon semiconductor wafer
US5308655A (en) 1991-08-16 1994-05-03 Materials Research Corporation Processing for forming low resistivity titanium nitride films
US5567583A (en) 1991-12-16 1996-10-22 Biotronics Corporation Methods for reducing non-specific priming in DNA detection
JPH05226280A (ja) 1992-02-14 1993-09-03 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
US5370739A (en) 1992-06-15 1994-12-06 Materials Research Corporation Rotating susceptor semiconductor wafer processing cluster tool module useful for tungsten CVD
US5326723A (en) 1992-09-09 1994-07-05 Intel Corporation Method for improving stability of tungsten chemical vapor deposition
JP2536377B2 (ja) 1992-11-27 1996-09-18 日本電気株式会社 半導体装置およびその製造方法
KR950012738B1 (ko) 1992-12-10 1995-10-20 현대전자산업주식회사 반도체소자의 텅스텐 콘택 플러그 제조방법
JP3014019B2 (ja) 1993-11-26 2000-02-28 日本電気株式会社 半導体装置の製造方法
KR970009867B1 (ko) 1993-12-17 1997-06-18 현대전자산업 주식회사 반도체 소자의 텅스텐 실리사이드 형성방법
JP3291889B2 (ja) 1994-02-15 2002-06-17 ソニー株式会社 ドライエッチング方法
US5643394A (en) 1994-09-16 1997-07-01 Applied Materials, Inc. Gas injection slit nozzle for a plasma process reactor
DE69518710T2 (de) 1994-09-27 2001-05-23 Applied Materials Inc Verfahren zum Behandeln eines Substrats in einer Vakuumbehandlungskammer
JPH08115984A (ja) 1994-10-17 1996-05-07 Hitachi Ltd 半導体装置及びその製造方法
US5545581A (en) 1994-12-06 1996-08-13 International Business Machines Corporation Plug strap process utilizing selective nitride and oxide etches
US6001729A (en) 1995-01-10 1999-12-14 Kawasaki Steel Corporation Method of forming wiring structure for semiconductor device
JP2737764B2 (ja) 1995-03-03 1998-04-08 日本電気株式会社 半導体装置及びその製造方法
JPH0922896A (ja) 1995-07-07 1997-01-21 Toshiba Corp 金属膜の選択的形成方法
JPH0927596A (ja) 1995-07-11 1997-01-28 Sanyo Electric Co Ltd 半導体装置の製造方法
US5863819A (en) 1995-10-25 1999-01-26 Micron Technology, Inc. Method of fabricating a DRAM access transistor with dual gate oxide technique
TW310461B (https=) 1995-11-10 1997-07-11 Matsushita Electric Industrial Co Ltd
US6017818A (en) 1996-01-22 2000-01-25 Texas Instruments Incorporated Process for fabricating conformal Ti-Si-N and Ti-B-N based barrier films with low defect density
US5833817A (en) 1996-04-22 1998-11-10 Taiwan Semiconductor Manufacturing Company, Ltd. Method for improving conformity and contact bottom coverage of sputtered titanium nitride barrier layers
US5633200A (en) 1996-05-24 1997-05-27 Micron Technology, Inc. Process for manufacturing a large grain tungsten nitride film and process for manufacturing a lightly nitrided titanium salicide diffusion barrier with a large grain tungsten nitride cover layer
US5963833A (en) 1996-07-03 1999-10-05 Micron Technology, Inc. Method for cleaning semiconductor wafers and
US5916634A (en) 1996-10-01 1999-06-29 Sandia Corporation Chemical vapor deposition of W-Si-N and W-B-N
KR100214852B1 (ko) 1996-11-02 1999-08-02 김영환 반도체 디바이스의 금속 배선 형성 방법
US6310300B1 (en) 1996-11-08 2001-10-30 International Business Machines Corporation Fluorine-free barrier layer between conductor and insulator for degradation prevention
KR100255516B1 (ko) 1996-11-28 2000-05-01 김영환 반도체 장치의 금속배선 및 그 형성방법
US6297152B1 (en) 1996-12-12 2001-10-02 Applied Materials, Inc. CVD process for DCS-based tungsten silicide
JP3090074B2 (ja) 1997-01-20 2000-09-18 日本電気株式会社 半導体装置及びその製造方法
US5804249A (en) 1997-02-07 1998-09-08 Lsi Logic Corporation Multistep tungsten CVD process with amorphization step
US6156382A (en) 1997-05-16 2000-12-05 Applied Materials, Inc. Chemical vapor deposition process for depositing tungsten
US6037248A (en) 1997-06-13 2000-03-14 Micron Technology, Inc. Method of fabricating integrated circuit wiring with low RC time delay
US6287965B1 (en) 1997-07-28 2001-09-11 Samsung Electronics Co, Ltd. Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor
US5956609A (en) 1997-08-11 1999-09-21 Taiwan Semiconductor Manufacturing Company, Ltd. Method for reducing stress and improving step-coverage of tungsten interconnects and plugs
US5913145A (en) 1997-08-28 1999-06-15 Texas Instruments Incorporated Method for fabricating thermally stable contacts with a diffusion barrier formed at high temperatures
US5795824A (en) 1997-08-28 1998-08-18 Novellus Systems, Inc. Method for nucleation of CVD tungsten films
US5926720A (en) 1997-09-08 1999-07-20 Lsi Logic Corporation Consistent alignment mark profiles on semiconductor wafers using PVD shadowing
US6861356B2 (en) 1997-11-05 2005-03-01 Tokyo Electron Limited Method of forming a barrier film and method of forming wiring structure and electrodes of semiconductor device having a barrier film
US7829144B2 (en) 1997-11-05 2010-11-09 Tokyo Electron Limited Method of forming a metal film for electrode
US6099904A (en) 1997-12-02 2000-08-08 Applied Materials, Inc. Low resistivity W using B2 H6 nucleation step
US6114242A (en) 1997-12-05 2000-09-05 Taiwan Semiconductor Manufacturing Company MOCVD molybdenum nitride diffusion barrier for Cu metallization
US6103609A (en) 1997-12-11 2000-08-15 Lg Semicon Co., Ltd. Method for fabricating semiconductor device
KR100272523B1 (ko) 1998-01-26 2000-12-01 김영환 반도체소자의배선형성방법
US6284316B1 (en) 1998-02-25 2001-09-04 Micron Technology, Inc. Chemical vapor deposition of titanium
JPH11260759A (ja) 1998-03-12 1999-09-24 Fujitsu Ltd 半導体装置の製造方法
US6452276B1 (en) 1998-04-30 2002-09-17 International Business Machines Corporation Ultra thin, single phase, diffusion barrier for metal conductors
US6066366A (en) 1998-07-22 2000-05-23 Applied Materials, Inc. Method for depositing uniform tungsten layers by CVD
US6143082A (en) 1998-10-08 2000-11-07 Novellus Systems, Inc. Isolation of incompatible processes in a multi-station processing chamber
KR100273767B1 (ko) 1998-10-28 2001-01-15 윤종용 반도체소자의 텅스텐막 제조방법 및 그에 따라 제조되는 반도체소자
US6037263A (en) 1998-11-05 2000-03-14 Vanguard International Semiconductor Corporation Plasma enhanced CVD deposition of tungsten and tungsten compounds
US6331483B1 (en) 1998-12-18 2001-12-18 Tokyo Electron Limited Method of film-forming of tungsten
KR100296126B1 (ko) 1998-12-22 2001-08-07 박종섭 고집적 메모리 소자의 게이트전극 형성방법
US20010014533A1 (en) 1999-01-08 2001-08-16 Shih-Wei Sun Method of fabricating salicide
JP3206578B2 (ja) 1999-01-11 2001-09-10 日本電気株式会社 多層配線構造をもつ半導体装置の製造方法
JP4570704B2 (ja) 1999-02-17 2010-10-27 株式会社アルバック バリア膜製造方法
US6958174B1 (en) 1999-03-15 2005-10-25 Regents Of The University Of Colorado Solid material comprising a thin metal film on its surface and methods for producing the same
US6306211B1 (en) 1999-03-23 2001-10-23 Matsushita Electric Industrial Co., Ltd. Method for growing semiconductor film and method for fabricating semiconductor device
TW452607B (en) 1999-03-26 2001-09-01 Nat Science Council Production of a refractory metal by chemical vapor deposition of a bilayer-stacked tungsten metal
US6245654B1 (en) 1999-03-31 2001-06-12 Taiwan Semiconductor Manufacturing Company, Ltd Method for preventing tungsten contact/via plug loss after a backside pressure fault
US6294468B1 (en) 1999-05-24 2001-09-25 Agere Systems Guardian Corp. Method of chemical vapor depositing tungsten films
US6720261B1 (en) 1999-06-02 2004-04-13 Agere Systems Inc. Method and system for eliminating extrusions in semiconductor vias
US6174812B1 (en) 1999-06-08 2001-01-16 United Microelectronics Corp. Copper damascene technology for ultra large scale integration circuits
US6355558B1 (en) 1999-06-10 2002-03-12 Texas Instruments Incorporated Metallization structure, and associated method, to improve crystallographic texture and cavity fill for CVD aluminum/PVD aluminum alloy films
US6309964B1 (en) 1999-07-08 2001-10-30 Taiwan Semiconductor Manufacturing Company Method for forming a copper damascene structure over tungsten plugs with improved adhesion, oxidation resistance, and diffusion barrier properties using nitridation of the tungsten plug
KR100319494B1 (ko) 1999-07-15 2002-01-09 김용일 원자층 에피택시 공정을 위한 반도체 박막 증착장치
US6265312B1 (en) 1999-08-02 2001-07-24 Stmicroelectronics, Inc. Method for depositing an integrated circuit tungsten film stack that includes a post-nucleation pump down step
US6391785B1 (en) 1999-08-24 2002-05-21 Interuniversitair Microelektronica Centrum (Imec) Method for bottomless deposition of barrier layers in integrated circuit metallization schemes
US6309966B1 (en) 1999-09-03 2001-10-30 Motorola, Inc. Apparatus and method of a low pressure, two-step nucleation tungsten deposition
US6303480B1 (en) 1999-09-13 2001-10-16 Applied Materials, Inc. Silicon layer to improve plug filling by CVD
US6610151B1 (en) 1999-10-02 2003-08-26 Uri Cohen Seed layers for interconnects and methods and apparatus for their fabrication
US6924226B2 (en) 1999-10-02 2005-08-02 Uri Cohen Methods for making multiple seed layers for metallic interconnects
WO2001029893A1 (en) 1999-10-15 2001-04-26 Asm America, Inc. Method for depositing nanolaminate thin films on sensitive surfaces
KR100330163B1 (ko) 2000-01-06 2002-03-28 윤종용 반도체 장치의 텅스텐 콘택 플러그 형성 방법
FI20000099A0 (fi) * 2000-01-18 2000-01-18 Asm Microchemistry Ltd Menetelmä metalliohutkalvojen kasvattamiseksi
US6277744B1 (en) 2000-01-21 2001-08-21 Advanced Micro Devices, Inc. Two-level silane nucleation for blanket tungsten deposition
US6777331B2 (en) 2000-03-07 2004-08-17 Simplus Systems Corporation Multilayered copper structure for improving adhesion property
US6429126B1 (en) 2000-03-29 2002-08-06 Applied Materials, Inc. Reduced fluorine contamination for tungsten CVD
JP2001284360A (ja) 2000-03-31 2001-10-12 Hitachi Ltd 半導体装置
EP1290746B1 (en) 2000-05-18 2012-04-25 Corning Incorporated High performance solid electrolyte fuel cells
JP3651360B2 (ja) 2000-05-19 2005-05-25 株式会社村田製作所 電極膜の形成方法
US7253076B1 (en) 2000-06-08 2007-08-07 Micron Technologies, Inc. Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers
JP2002016066A (ja) 2000-06-27 2002-01-18 Mitsubishi Electric Corp 半導体装置およびその製造方法
US6620723B1 (en) 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7101795B1 (en) 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US7732327B2 (en) 2000-06-28 2010-06-08 Applied Materials, Inc. Vapor deposition of tungsten materials
US6936538B2 (en) 2001-07-16 2005-08-30 Applied Materials, Inc. Method and apparatus for depositing tungsten after surface treatment to improve film characteristics
US6551929B1 (en) 2000-06-28 2003-04-22 Applied Materials, Inc. Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US7964505B2 (en) 2005-01-19 2011-06-21 Applied Materials, Inc. Atomic layer deposition of tungsten materials
US6585823B1 (en) 2000-07-07 2003-07-01 Asm International, N.V. Atomic layer deposition
US6491978B1 (en) 2000-07-10 2002-12-10 Applied Materials, Inc. Deposition of CVD layers for copper metallization using novel metal organic chemical vapor deposition (MOCVD) precursors
US6218301B1 (en) 2000-07-31 2001-04-17 Applied Materials, Inc. Deposition of tungsten films from W(CO)6
US6740591B1 (en) 2000-11-16 2004-05-25 Intel Corporation Slurry and method for chemical mechanical polishing of copper
WO2002041379A1 (en) 2000-11-17 2002-05-23 Tokyo Electron Limited Method of forming metal wiring and semiconductor manufacturing apparatus for forming metal wiring
KR100375230B1 (ko) 2000-12-20 2003-03-08 삼성전자주식회사 매끄러운 텅스텐 표면을 갖는 반도체 장치의 배선 제조방법
US6908848B2 (en) 2000-12-20 2005-06-21 Samsung Electronics, Co., Ltd. Method for forming an electrical interconnection providing improved surface morphology of tungsten
US20020117399A1 (en) 2001-02-23 2002-08-29 Applied Materials, Inc. Atomically thin highly resistive barrier layer in a copper via
US20020190379A1 (en) 2001-03-28 2002-12-19 Applied Materials, Inc. W-CVD with fluorine-free tungsten nucleation
US20030019428A1 (en) 2001-04-28 2003-01-30 Applied Materials, Inc. Chemical vapor deposition chamber
US20020168840A1 (en) 2001-05-11 2002-11-14 Applied Materials, Inc. Deposition of tungsten silicide films
US6635965B1 (en) 2001-05-22 2003-10-21 Novellus Systems, Inc. Method for producing ultra-thin tungsten layers with improved step coverage
US7262125B2 (en) 2001-05-22 2007-08-28 Novellus Systems, Inc. Method of forming low-resistivity tungsten interconnects
US7955972B2 (en) 2001-05-22 2011-06-07 Novellus Systems, Inc. Methods for growing low-resistivity tungsten for high aspect ratio and small features
US7005372B2 (en) 2003-01-21 2006-02-28 Novellus Systems, Inc. Deposition of tungsten nitride
US9076843B2 (en) 2001-05-22 2015-07-07 Novellus Systems, Inc. Method for producing ultra-thin tungsten layers with improved step coverage
US7589017B2 (en) 2001-05-22 2009-09-15 Novellus Systems, Inc. Methods for growing low-resistivity tungsten film
US7141494B2 (en) 2001-05-22 2006-11-28 Novellus Systems, Inc. Method for reducing tungsten film roughness and improving step coverage
US6686278B2 (en) 2001-06-19 2004-02-03 United Microelectronics Corp. Method for forming a plug metal layer
US20070009658A1 (en) * 2001-07-13 2007-01-11 Yoo Jong H Pulse nucleation enhanced nucleation technique for improved step coverage and better gap fill for WCVD process
US7211144B2 (en) 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
WO2003029515A2 (en) 2001-07-16 2003-04-10 Applied Materials, Inc. Formation of composite tungsten films
WO2003030224A2 (en) 2001-07-25 2003-04-10 Applied Materials, Inc. Barrier formation using novel sputter-deposition method
US20030029715A1 (en) 2001-07-25 2003-02-13 Applied Materials, Inc. An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems
JP4032872B2 (ja) 2001-08-14 2008-01-16 東京エレクトロン株式会社 タングステン膜の形成方法
JP4595989B2 (ja) 2001-08-24 2010-12-08 東京エレクトロン株式会社 成膜方法
WO2003025243A2 (en) * 2001-09-14 2003-03-27 Asm International N.V. Metal nitride deposition by ald using gettering reactant
US6607976B2 (en) 2001-09-25 2003-08-19 Applied Materials, Inc. Copper interconnect barrier layer structure and formation method
TW589684B (en) * 2001-10-10 2004-06-01 Applied Materials Inc Method for depositing refractory metal layers employing sequential deposition techniques
JP2003142484A (ja) 2001-10-31 2003-05-16 Mitsubishi Electric Corp 半導体装置の製造方法
US6566262B1 (en) 2001-11-01 2003-05-20 Lsi Logic Corporation Method for creating self-aligned alloy capping layers for copper interconnect structures
US20030091739A1 (en) 2001-11-14 2003-05-15 Hitoshi Sakamoto Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatus
US20030091870A1 (en) 2001-11-15 2003-05-15 Siddhartha Bhowmik Method of forming a liner for tungsten plugs
KR20030050652A (ko) 2001-12-19 2003-06-25 주식회사 하이닉스반도체 텅스텐막의 형성 방법
US20030123216A1 (en) 2001-12-27 2003-07-03 Yoon Hyungsuk A. Deposition of tungsten for the formation of conformal tungsten silicide
US6833161B2 (en) 2002-02-26 2004-12-21 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US6566250B1 (en) 2002-03-18 2003-05-20 Taiwant Semiconductor Manufacturing Co., Ltd Method for forming a self aligned capping layer
US20030194825A1 (en) 2002-04-10 2003-10-16 Kam Law Deposition of gate metallization for active matrix liquid crystal display (AMLCD) applications
US7279432B2 (en) 2002-04-16 2007-10-09 Applied Materials, Inc. System and method for forming an integrated barrier layer
KR100485305B1 (ko) 2002-05-10 2005-04-25 주식회사 웰스킨 스핑고신-1-포스페이트 및 그 유도체를 포함하는 미백화장료 조성물
US20030224217A1 (en) 2002-05-31 2003-12-04 Applied Materials, Inc. Metal nitride formation
US6905543B1 (en) 2002-06-19 2005-06-14 Novellus Systems, Inc Methods of forming tungsten nucleation layer
AU2003248850A1 (en) 2002-07-12 2004-02-02 President And Fellows Of Harvard College Vapor deposition of tungsten nitride
TWI287559B (en) 2002-08-22 2007-10-01 Konica Corp Organic-inorganic hybrid film, its manufacturing method, optical film, and polarizing film
US6706625B1 (en) 2002-12-06 2004-03-16 Chartered Semiconductor Manufacturing Ltd. Copper recess formation using chemical process for fabricating barrier cap for lines and vias
US6962873B1 (en) 2002-12-10 2005-11-08 Novellus Systems, Inc. Nitridation of electrolessly deposited cobalt
JP2006515535A (ja) 2002-12-23 2006-06-01 アプライド シン フィルムズ，インコーポレイティッド リン酸アルミニウムコーティング
KR101035221B1 (ko) 2002-12-27 2011-05-18 가부시키가이샤 알박 질화 텅스텐막의 형성 방법
JP2004235456A (ja) 2003-01-30 2004-08-19 Seiko Epson Corp 成膜装置、成膜方法および半導体装置の製造方法
US7713592B2 (en) 2003-02-04 2010-05-11 Tegal Corporation Nanolayer deposition process
JP3956049B2 (ja) 2003-03-07 2007-08-08 東京エレクトロン株式会社 タングステン膜の形成方法
US6844258B1 (en) 2003-05-09 2005-01-18 Novellus Systems, Inc. Selective refractory metal and nitride capping
KR20060079144A (ko) 2003-06-18 2006-07-05 어플라이드 머티어리얼스, 인코포레이티드 배리어 물질의 원자층 증착
JP2005026380A (ja) 2003-06-30 2005-01-27 Toshiba Corp 不揮発性メモリを含む半導体装置及びその製造方法
JP2005029821A (ja) 2003-07-09 2005-02-03 Tokyo Electron Ltd 成膜方法
US7754604B2 (en) 2003-08-26 2010-07-13 Novellus Systems, Inc. Reducing silicon attack and improving resistivity of tungsten nitride film
JP4606006B2 (ja) 2003-09-11 2011-01-05 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US7078341B2 (en) 2003-09-30 2006-07-18 Tokyo Electron Limited Method of depositing metal layers from metal-carbonyl precursors
US6924223B2 (en) 2003-09-30 2005-08-02 Tokyo Electron Limited Method of forming a metal layer using an intermittent precursor gas flow process
JP2005150416A (ja) 2003-11-17 2005-06-09 Hitachi Ltd 半導体集積回路装置及びその製造方法
KR20050054122A (ko) * 2003-12-04 2005-06-10 성명모 자외선 원자층 증착법을 이용한 박막 제조 방법
KR100557626B1 (ko) 2003-12-23 2006-03-10 주식회사 하이닉스반도체 반도체 소자의 비트라인 형성 방법
US20050139838A1 (en) 2003-12-26 2005-06-30 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
KR100528030B1 (ko) 2003-12-30 2005-11-15 주식회사 아이피에스 박막 증착 방법
KR101108304B1 (ko) 2004-02-26 2012-01-25 노벨러스 시스템즈, 인코포레이티드 질화 텅스텐의 증착
CN100370585C (zh) 2004-04-12 2008-02-20 株式会社爱发科 隔离膜的形成方法及电极膜的形成方法
JP5074183B2 (ja) 2004-04-21 2012-11-14 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 高圧ガス放電ランプを製造する方法、タングステン電極、高圧ガス放電ランプ、および照明ユニット
US6987063B2 (en) 2004-06-10 2006-01-17 Freescale Semiconductor, Inc. Method to reduce impurity elements during semiconductor film deposition
US20050282384A1 (en) 2004-06-17 2005-12-22 Hidemi Nawafune Method for forming protective film and electroless plating bath
US7605469B2 (en) 2004-06-30 2009-10-20 Intel Corporation Atomic layer deposited tantalum containing adhesion layer
KR100615093B1 (ko) 2004-08-24 2006-08-22 삼성전자주식회사 나노크리스탈을 갖는 비휘발성 메모리 소자의 제조방법
US7250367B2 (en) 2004-09-01 2007-07-31 Micron Technology, Inc. Deposition methods using heteroleptic precursors
US20060068098A1 (en) 2004-09-27 2006-03-30 Tokyo Electron Limited Deposition of ruthenium metal layers in a thermal chemical vapor deposition process
US7429402B2 (en) 2004-12-10 2008-09-30 Applied Materials, Inc. Ruthenium as an underlayer for tungsten film deposition
US20060145190A1 (en) 2004-12-31 2006-07-06 Salzman David B Surface passivation for III-V compound semiconductors
KR100642750B1 (ko) 2005-01-31 2006-11-10 삼성전자주식회사 반도체 소자 및 그 제조 방법
US7344983B2 (en) 2005-03-18 2008-03-18 International Business Machines Corporation Clustered surface preparation for silicide and metal contacts
TW200734482A (en) 2005-03-18 2007-09-16 Applied Materials Inc Electroless deposition process on a contact containing silicon or silicide
US7220671B2 (en) 2005-03-31 2007-05-22 Intel Corporation Organometallic precursors for the chemical phase deposition of metal films in interconnect applications
EP1728894B1 (en) 2005-06-01 2008-10-15 Interuniversitair Microelektronica Centrum ( Imec) Atomic layer deposition (ald) method for producing a high quality layer
JP4738178B2 (ja) 2005-06-17 2011-08-03 富士通セミコンダクター株式会社 半導体装置の製造方法
JP4945937B2 (ja) 2005-07-01 2012-06-06 東京エレクトロン株式会社 タングステン膜の形成方法、成膜装置及び記憶媒体
JP4864368B2 (ja) 2005-07-21 2012-02-01 シャープ株式会社 気相堆積方法
US7517798B2 (en) 2005-09-01 2009-04-14 Micron Technology, Inc. Methods for forming through-wafer interconnects and structures resulting therefrom
US20070066060A1 (en) 2005-09-19 2007-03-22 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices and fabrication methods thereof
US7235485B2 (en) 2005-10-14 2007-06-26 Samsung Electronics Co., Ltd. Method of manufacturing semiconductor device
US8993055B2 (en) 2005-10-27 2015-03-31 Asm International N.V. Enhanced thin film deposition
US7524765B2 (en) 2005-11-02 2009-04-28 Intel Corporation Direct tailoring of the composition and density of ALD films
US7276796B1 (en) 2006-03-15 2007-10-02 International Business Machines Corporation Formation of oxidation-resistant seed layer for interconnect applications
JP2007250907A (ja) 2006-03-16 2007-09-27 Renesas Technology Corp 半導体装置およびその製造方法
US8258057B2 (en) 2006-03-30 2012-09-04 Intel Corporation Copper-filled trench contact for transistor performance improvement
TW200746268A (en) 2006-04-11 2007-12-16 Applied Materials Inc Process for forming cobalt-containing materials
US7828504B2 (en) 2006-05-12 2010-11-09 Axcellis Technologies, Inc. Combination load lock for handling workpieces
US7557047B2 (en) 2006-06-09 2009-07-07 Micron Technology, Inc. Method of forming a layer of material using an atomic layer deposition process
KR100884339B1 (ko) 2006-06-29 2009-02-18 주식회사 하이닉스반도체 반도체 소자의 텅스텐막 형성방법 및 이를 이용한 텅스텐배선층 형성방법
US7355254B2 (en) 2006-06-30 2008-04-08 Intel Corporation Pinning layer for low resistivity N-type source drain ohmic contacts
KR100705936B1 (ko) 2006-06-30 2007-04-13 주식회사 하이닉스반도체 반도체 소자의 비트라인 형성방법
US8278216B1 (en) 2006-08-18 2012-10-02 Novellus Systems, Inc. Selective capping of copper
US8153831B2 (en) 2006-09-28 2012-04-10 Praxair Technology, Inc. Organometallic compounds, processes for the preparation thereof and methods of use thereof
KR100881391B1 (ko) 2006-09-29 2009-02-05 주식회사 하이닉스반도체 반도체 소자의 게이트 형성방법
KR100894769B1 (ko) 2006-09-29 2009-04-24 주식회사 하이닉스반도체 반도체 소자의 금속 배선 형성방법
KR20080036679A (ko) 2006-10-24 2008-04-29 삼성전자주식회사 불 휘발성 메모리 소자의 형성 방법
US7675119B2 (en) 2006-12-25 2010-03-09 Elpida Memory, Inc. Semiconductor device and manufacturing method thereof
KR100874829B1 (ko) 2006-12-26 2008-12-19 동부일렉트로닉스 주식회사 반도체 소자의 금속배선 형성방법
KR20080061978A (ko) 2006-12-28 2008-07-03 주식회사 하이닉스반도체 반도체 소자의 배선 형성방법
JP2008205219A (ja) 2007-02-20 2008-09-04 Masato Toshima シャワーヘッドおよびこれを用いたｃｖｄ装置
US7786006B2 (en) 2007-02-26 2010-08-31 Tokyo Electron Limited Interconnect structures with a metal nitride diffusion barrier containing ruthenium and method of forming
CN100577866C (zh) 2007-02-27 2010-01-06 中微半导体设备(上海)有限公司 应用于等离子体反应室中的气体喷头组件、其制造方法及其翻新再利用的方法
US8435898B2 (en) 2007-04-05 2013-05-07 Freescale Semiconductor, Inc. First inter-layer dielectric stack for non-volatile memory
US20080254619A1 (en) 2007-04-14 2008-10-16 Tsang-Jung Lin Method of fabricating a semiconductor device
US20080268642A1 (en) * 2007-04-20 2008-10-30 Kazutaka Yanagita Deposition of transition metal carbide containing films
JP2009024252A (ja) 2007-05-15 2009-02-05 Applied Materials Inc タングステン材料の原子層堆積法
JP2008288289A (ja) 2007-05-16 2008-11-27 Oki Electric Ind Co Ltd 電界効果トランジスタとその製造方法
US8017182B2 (en) * 2007-06-21 2011-09-13 Asm International N.V. Method for depositing thin films by mixed pulsed CVD and ALD
KR100890047B1 (ko) 2007-06-28 2009-03-25 주식회사 하이닉스반도체 반도체소자의 배선 형성방법
US8142847B2 (en) 2007-07-13 2012-03-27 Rohm And Haas Electronic Materials Llc Precursor compositions and methods
US7655567B1 (en) 2007-07-24 2010-02-02 Novellus Systems, Inc. Methods for improving uniformity and resistivity of thin tungsten films
KR101225642B1 (ko) 2007-11-15 2013-01-24 삼성전자주식회사 Ｈ2 원격 플라즈마 처리를 이용한 반도체 소자의 콘택플러그 형성방법
CN101952945B (zh) 2007-11-29 2013-08-14 朗姆研究公司 控制微负载的脉冲式偏置等离子体工艺
KR100939777B1 (ko) 2007-11-30 2010-01-29 주식회사 하이닉스반도체 텅스텐막 형성방법 및 이를 이용한 반도체 소자의 배선형성방법
US8080324B2 (en) 2007-12-03 2011-12-20 Kobe Steel, Ltd. Hard coating excellent in sliding property and method for forming same
US7772114B2 (en) 2007-12-05 2010-08-10 Novellus Systems, Inc. Method for improving uniformity and adhesion of low resistivity tungsten film
US8053365B2 (en) 2007-12-21 2011-11-08 Novellus Systems, Inc. Methods for forming all tungsten contacts and lines
KR100919808B1 (ko) 2008-01-02 2009-10-01 주식회사 하이닉스반도체 반도체소자의 텅스텐막 형성방법
US8062977B1 (en) 2008-01-31 2011-11-22 Novellus Systems, Inc. Ternary tungsten-containing resistive thin films
KR20090101592A (ko) 2008-03-24 2009-09-29 삼성전자주식회사 산화막 형성 방법 및 이를 이용한 게이트 형성 방법
KR101163825B1 (ko) 2008-03-28 2012-07-09 도쿄엘렉트론가부시키가이샤 정전척 및 그 제조 방법
WO2009125255A1 (en) 2008-04-11 2009-10-15 Freescale Semiconductor, Inc. Surface treatment in semiconductor manufacturing
US8058170B2 (en) 2008-06-12 2011-11-15 Novellus Systems, Inc. Method for depositing thin tungsten film with low resistivity and robust micro-adhesion characteristics
US8385644B2 (en) 2008-07-08 2013-02-26 Zeitera, Llc Digital video fingerprinting based on resultant weighted gradient orientation computation
US7968460B2 (en) 2008-06-19 2011-06-28 Micron Technology, Inc. Semiconductor with through-substrate interconnect
US8551885B2 (en) 2008-08-29 2013-10-08 Novellus Systems, Inc. Method for reducing tungsten roughness and improving reflectivity
US20100062149A1 (en) 2008-09-08 2010-03-11 Applied Materials, Inc. Method for tuning a deposition rate during an atomic layer deposition process
KR20100029952A (ko) 2008-09-09 2010-03-18 주식회사 하이닉스반도체 금속성 캡핑층을 구비한 상변화 메모리 소자 및 그 제조 방법
US20100072623A1 (en) 2008-09-19 2010-03-25 Advanced Micro Devices, Inc. Semiconductor device with improved contact plugs, and related fabrication methods
JP2010093116A (ja) 2008-10-09 2010-04-22 Panasonic Corp 半導体装置及び半導体装置の製造方法
US20100120245A1 (en) 2008-11-07 2010-05-13 Agus Sofian Tjandra Plasma and thermal anneal treatment to improve oxidation resistance of metal-containing films
US7964502B2 (en) 2008-11-25 2011-06-21 Freescale Semiconductor, Inc. Multilayered through via
US7825024B2 (en) 2008-11-25 2010-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming through-silicon vias
US8129270B1 (en) 2008-12-10 2012-03-06 Novellus Systems, Inc. Method for depositing tungsten film having low resistivity, low roughness and high reflectivity
US20100144140A1 (en) 2008-12-10 2010-06-10 Novellus Systems, Inc. Methods for depositing tungsten films having low resistivity for gapfill applications
US8110877B2 (en) 2008-12-19 2012-02-07 Intel Corporation Metal-insulator-semiconductor tunneling contacts having an insulative layer disposed between source/drain contacts and source/drain regions
WO2010077847A2 (en) * 2008-12-31 2010-07-08 Applied Materials, Inc. Method of depositing tungsten film with reduced resistivity and improved surface morphology
US8236691B2 (en) 2008-12-31 2012-08-07 Micron Technology, Inc. Method of high aspect ratio plug fill
KR20100096488A (ko) 2009-02-24 2010-09-02 삼성전자주식회사 리세스 채널 구조를 갖는 반도체 소자
DE102009015747B4 (de) 2009-03-31 2013-08-08 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Verfahren zur Herstellung von Transistoren mit Metallgateelektrodenstrukturen und Gatedielektrikum mit großem ε und einer Zwischenätzstoppschicht
US9159571B2 (en) 2009-04-16 2015-10-13 Lam Research Corporation Tungsten deposition process using germanium-containing reducing agent
US20100267230A1 (en) 2009-04-16 2010-10-21 Anand Chandrashekar Method for forming tungsten contacts and interconnects with small critical dimensions
US20110020546A1 (en) * 2009-05-15 2011-01-27 Asm International N.V. Low Temperature ALD of Noble Metals
US8039394B2 (en) 2009-06-26 2011-10-18 Seagate Technology Llc Methods of forming layers of alpha-tantalum
US9034768B2 (en) 2010-07-09 2015-05-19 Novellus Systems, Inc. Depositing tungsten into high aspect ratio features
US8119527B1 (en) 2009-08-04 2012-02-21 Novellus Systems, Inc. Depositing tungsten into high aspect ratio features
US8207062B2 (en) 2009-09-09 2012-06-26 Novellus Systems, Inc. Method for improving adhesion of low resistivity tungsten/tungsten nitride layers
EP2501722A4 (en) 2009-11-19 2013-05-01 Univ Singapore METHOD FOR PRODUCING T-CELL-RECEPTOR-SIMILAR MONOCLONAL ANTIBODIES AND APPLICATIONS THEREOF
DE102009055392B4 (de) 2009-12-30 2014-05-22 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Halbleiterbauelement und Verfahren zur Herstellung des Halbleiterbauelements
US8642797B2 (en) 2010-02-25 2014-02-04 Air Products And Chemicals, Inc. Amidate precursors for depositing metal containing films
JP5729911B2 (ja) 2010-03-11 2015-06-03 ノベラス・システムズ・インコーポレーテッドＮｏｖｅｌｌｕｓ Ｓｙｓｔｅｍｓ Ｉｎｃｏｒｐｏｒａｔｅｄ タングステン膜の製造方法およびタングステン膜を堆積させる装置
US8709948B2 (en) 2010-03-12 2014-04-29 Novellus Systems, Inc. Tungsten barrier and seed for copper filled TSV
KR101356332B1 (ko) 2010-03-19 2014-02-04 노벨러스 시스템즈, 인코포레이티드 낮은 저항 및 강한 미소-접착 특성을 가진 텅스텐 박막의 증착 방법
US9129945B2 (en) 2010-03-24 2015-09-08 Applied Materials, Inc. Formation of liner and barrier for tungsten as gate electrode and as contact plug to reduce resistance and enhance device performance
US8741394B2 (en) 2010-03-25 2014-06-03 Novellus Systems, Inc. In-situ deposition of film stacks
US20110256692A1 (en) 2010-04-14 2011-10-20 Applied Materials, Inc. Multiple precursor concentric delivery showerhead
IL213195A0 (en) 2010-05-31 2011-07-31 Rohm & Haas Elect Mat Photoresist compositions and emthods of forming photolithographic patterns
TWI509695B (zh) 2010-06-10 2015-11-21 Ａｓｍ國際股份有限公司 使膜選擇性沈積於基板上的方法
TW201314739A (zh) 2010-09-27 2013-04-01 Astrowatt Inc 包含半導體層及含金屬層之電子裝置及其形成方法
US8778797B2 (en) 2010-09-27 2014-07-15 Novellus Systems, Inc. Systems and methods for selective tungsten deposition in vias
WO2012057884A1 (en) 2010-10-29 2012-05-03 Applied Materials, Inc. Nitrogen-containing ligands and their use in atomic layer deposition methods
US8969823B2 (en) 2011-01-21 2015-03-03 Uchicago Argonne, Llc Microchannel plate detector and methods for their fabrication
US20120199887A1 (en) 2011-02-03 2012-08-09 Lana Chan Methods of controlling tungsten film properties
US20120225191A1 (en) 2011-03-01 2012-09-06 Applied Materials, Inc. Apparatus and Process for Atomic Layer Deposition
US8865594B2 (en) 2011-03-10 2014-10-21 Applied Materials, Inc. Formation of liner and barrier for tungsten as gate electrode and as contact plug to reduce resistance and enhance device performance
US8546250B2 (en) 2011-08-18 2013-10-01 Wafertech Llc Method of fabricating vertical integrated semiconductor device with multiple continuous single crystal silicon layers vertically separated from one another
US8916435B2 (en) 2011-09-09 2014-12-23 International Business Machines Corporation Self-aligned bottom plate for metal high-K dielectric metal insulator metal (MIM) embedded dynamic random access memory
JP5710529B2 (ja) 2011-09-22 2015-04-30 株式会社東芝 半導体装置及びその製造方法
WO2013063260A1 (en) 2011-10-28 2013-05-02 Applied Materials, Inc. High temperature tungsten metallization process
US9112003B2 (en) 2011-12-09 2015-08-18 Asm International N.V. Selective formation of metallic films on metallic surfaces
CN113862634A (zh) 2012-03-27 2021-12-31 诺发系统公司 钨特征填充
US9034760B2 (en) 2012-06-29 2015-05-19 Novellus Systems, Inc. Methods of forming tensile tungsten films and compressive tungsten films
US9969622B2 (en) 2012-07-26 2018-05-15 Lam Research Corporation Ternary tungsten boride nitride films and methods for forming same
US8975184B2 (en) 2012-07-27 2015-03-10 Novellus Systems, Inc. Methods of improving tungsten contact resistance in small critical dimension features
KR20140028992A (ko) 2012-08-31 2014-03-10 에스케이하이닉스 주식회사 텅스텐 게이트전극을 구비한 반도체장치 및 그 제조 방법
KR101990051B1 (ko) 2012-08-31 2019-10-01 에스케이하이닉스 주식회사 무불소텅스텐 배리어층을 구비한 반도체장치 및 그 제조 방법
US8853080B2 (en) 2012-09-09 2014-10-07 Novellus Systems, Inc. Method for depositing tungsten film with low roughness and low resistivity
JP2014074190A (ja) 2012-10-02 2014-04-24 Tokyo Electron Ltd 成膜装置
US9169556B2 (en) 2012-10-11 2015-10-27 Applied Materials, Inc. Tungsten growth modulation by controlling surface composition
US9546419B2 (en) 2012-11-26 2017-01-17 Applied Materials, Inc. Method of reducing tungsten film roughness and resistivity
WO2014140672A1 (en) 2013-03-15 2014-09-18 L'air Liquide, Societe Anonyme Pour I'etude Et I'exploitation Des Procedes Georges Claude Bis(alkylimido)-bis(alkylamido)molybdenum molecules for deposition of molybdenum-containing films
US9153486B2 (en) 2013-04-12 2015-10-06 Lam Research Corporation CVD based metal/semiconductor OHMIC contact for high volume manufacturing applications
US8975142B2 (en) 2013-04-25 2015-03-10 Globalfoundries Inc. FinFET channel stress using tungsten contacts in raised epitaxial source and drain
US9082826B2 (en) 2013-05-24 2015-07-14 Lam Research Corporation Methods and apparatuses for void-free tungsten fill in three-dimensional semiconductor features
JP6494940B2 (ja) 2013-07-25 2019-04-03 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 異なるサイズのフィーチャへのボイドフリータングステン充填
US9362163B2 (en) 2013-07-30 2016-06-07 Lam Research Corporation Methods and apparatuses for atomic layer cleaning of contacts and vias
CN105453230B (zh) 2013-08-16 2019-06-14 应用材料公司 用六氟化钨(wf6)回蚀进行钨沉积
JP5864503B2 (ja) 2013-09-30 2016-02-17 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、プログラム及び記録媒体
US10777438B2 (en) 2013-10-18 2020-09-15 Brooks Automation, Inc. Processing apparatus
US9589808B2 (en) 2013-12-19 2017-03-07 Lam Research Corporation Method for depositing extremely low resistivity tungsten
JP2015177006A (ja) 2014-03-14 2015-10-05 株式会社東芝 半導体装置及びその製造方法
JP6379550B2 (ja) 2014-03-18 2018-08-29 東京エレクトロン株式会社 成膜装置
US9595470B2 (en) 2014-05-09 2017-03-14 Lam Research Corporation Methods of preparing tungsten and tungsten nitride thin films using tungsten chloride precursor
US20150348840A1 (en) 2014-05-31 2015-12-03 Lam Research Corporation Methods of filling high aspect ratio features with fluorine free tungsten
US9551074B2 (en) 2014-06-05 2017-01-24 Lam Research Corporation Electroless plating solution with at least two borane containing reducing agents
TWI656232B (zh) 2014-08-14 2019-04-11 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 鉬組成物及其用於形成氧化鉬膜之用途
KR102156409B1 (ko) 2014-09-16 2020-09-15 에스케이하이닉스 주식회사 패턴 형성 방법
JP2016098406A (ja) 2014-11-21 2016-05-30 東京エレクトロン株式会社 モリブデン膜の成膜方法
US9502263B2 (en) 2014-12-15 2016-11-22 Applied Materials, Inc. UV assisted CVD AlN film for BEOL etch stop application
US9443865B2 (en) 2014-12-18 2016-09-13 Sandisk Technologies Llc Fabricating 3D NAND memory having monolithic crystalline silicon vertical NAND channel
US9953984B2 (en) 2015-02-11 2018-04-24 Lam Research Corporation Tungsten for wordline applications
TW201700761A (zh) 2015-05-13 2017-01-01 應用材料股份有限公司 經由基材的有機金屬或矽烷預處理而改良的鎢膜
CN113652672B (zh) 2015-05-27 2023-12-22 Asm Ip 控股有限公司 用于含钼或钨薄膜的ald的前体的合成和用途
US9978605B2 (en) * 2015-05-27 2018-05-22 Lam Research Corporation Method of forming low resistivity fluorine free tungsten film without nucleation
US9613818B2 (en) * 2015-05-27 2017-04-04 Lam Research Corporation Deposition of low fluorine tungsten by sequential CVD process
US9754824B2 (en) 2015-05-27 2017-09-05 Lam Research Corporation Tungsten films having low fluorine content
KR102397797B1 (ko) * 2015-05-27 2022-05-12 램 리써치 코포레이션 순차적인 cvd 프로세스에 의한 저 불소 텅스텐의 증착
JP6478813B2 (ja) * 2015-05-28 2019-03-06 東京エレクトロン株式会社 金属膜の成膜方法
JP6541438B2 (ja) 2015-05-28 2019-07-10 東京エレクトロン株式会社 金属膜のストレス低減方法および金属膜の成膜方法
US10121671B2 (en) 2015-08-28 2018-11-06 Applied Materials, Inc. Methods of depositing metal films using metal oxyhalide precursors
US9853123B2 (en) 2015-10-28 2017-12-26 United Microelectronics Corp. Semiconductor structure and fabrication method thereof
US10535558B2 (en) 2016-02-09 2020-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming trenches
US10995405B2 (en) 2016-02-19 2021-05-04 Merck Patent Gmbh Deposition of molybdenum thin films using a molybdenum carbonyl precursor
CN109661481B (zh) * 2016-07-14 2021-11-30 恩特格里斯公司 使用MoOC14的CVD Mo沉积
US20190161853A1 (en) 2016-07-26 2019-05-30 Tokyo Electron Limited Method for forming tungsten film
US10573522B2 (en) * 2016-08-16 2020-02-25 Lam Research Corporation Method for preventing line bending during metal fill process
US20180142345A1 (en) 2016-11-23 2018-05-24 Entegris, Inc. Low temperature molybdenum film deposition utilizing boron nucleation layers
US10453744B2 (en) 2016-11-23 2019-10-22 Entegris, Inc. Low temperature molybdenum film deposition utilizing boron nucleation layers
US10283404B2 (en) 2017-03-30 2019-05-07 Lam Research Corporation Selective deposition of WCN barrier/adhesion layer for interconnect
KR102572271B1 (ko) 2017-04-10 2023-08-28 램 리써치 코포레이션 몰리브덴을 함유하는 저 저항률 막들
KR20250073535A (ko) 2017-08-14 2025-05-27 램 리써치 코포레이션 3차원 수직 nand 워드라인을 위한 금속 충진 프로세스
US20190067003A1 (en) 2017-08-30 2019-02-28 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film on a dielectric surface of a substrate and related semiconductor device structures
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US10269559B2 (en) 2017-09-13 2019-04-23 Lam Research Corporation Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
US20200402846A1 (en) 2017-11-20 2020-12-24 Lam Research Corporation Self-limiting growth
US11560625B2 (en) 2018-01-19 2023-01-24 Entegris, Inc. Vapor deposition of molybdenum using a bis(alkyl-arene) molybdenum precursor
TWI863919B (zh) 2018-07-26 2024-12-01 美商蘭姆研究公司 純金屬膜的沉積
US12014928B2 (en) 2018-07-31 2024-06-18 Lam Research Corporation Multi-layer feature fill
KR20250116174A (ko) 2018-11-19 2025-07-31 램 리써치 코포레이션 텅스텐을 위한 몰리브덴 템플릿들
WO2020123987A1 (en) 2018-12-14 2020-06-18 Lam Research Corporation Atomic layer deposition on 3d nand structures
SG11202108217UA (en) 2019-01-28 2021-08-30 Lam Res Corp Deposition of metal films
SG11202109796QA (en) 2019-03-11 2021-10-28 Lam Res Corp Precursors for deposition of molybdenum-containing films
WO2020210260A1 (en) 2019-04-11 2020-10-15 Lam Research Corporation High step coverage tungsten deposition
US12237221B2 (en) 2019-05-22 2025-02-25 Lam Research Corporation Nucleation-free tungsten deposition
WO2021030836A1 (en) 2019-08-12 2021-02-18 Lam Research Corporation Tungsten deposition
EP4018471A4 (en) 2019-08-22 2024-01-17 Lam Research Corporation Substantially carbon-free molybdenum-containing and tungsten-containing films in semiconductor device manufacturing
US12334351B2 (en) 2019-09-03 2025-06-17 Lam Research Corporation Molybdenum deposition
WO2021076636A1 (en) 2019-10-15 2021-04-22 Lam Research Corporation Molybdenum fill
KR102953798B1 (ko) 2020-06-24 2026-04-15 에이에스엠 아이피 홀딩 비.브이. 몰리브덴을 포함하는 막의 기상 증착

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017053024A (ja) * 2015-08-07 2017-03-16 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ タングステン堆積充填の強化のためのタングステンの原子層エッチング
US20170306479A1 (en) * 2016-04-21 2017-10-26 Asm Ip Holding B.V. Deposition of metal borides and silicides
US20170306490A1 (en) * 2016-04-25 2017-10-26 Applied Materials, Inc. Enhanced Spatial ALD Of Metals Through Controlled Precursor Mixing

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023510607A (ja) * 2020-01-16 2023-03-14 インテグリス・インコーポレーテッド エッチングまたは堆積のための方法
JP7486588B2 (ja) 2020-01-16 2024-05-17 インテグリス・インコーポレーテッド エッチングまたは堆積のための方法
JPWO2022130559A1 (https=) * 2020-12-17 2022-06-23
JP7608478B2 (ja) 2020-12-17 2025-01-06 株式会社Kokusai Electric 基板処理方法、プログラム、基板処理装置及び半導体装置の製造方法
JP2023135391A (ja) * 2022-03-15 2023-09-28 キオクシア株式会社 成膜方法及び成膜装置
US12448688B2 (en) 2022-03-15 2025-10-21 Kioxia Corporation Film forming method and apparatus
JP7774479B2 (ja) 2022-03-15 2025-11-21 キオクシア株式会社 成膜方法及び成膜装置

Also Published As

Publication number Publication date
WO2019213604A1 (en) 2019-11-07
KR20200140391A (ko) 2020-12-15
US11549175B2 (en) 2023-01-10
JP2024147716A (ja) 2024-10-16
CN112262457A (zh) 2021-01-22
US20210238736A1 (en) 2021-08-05
KR102806630B1 (ko) 2025-05-12

Similar Documents

Publication Publication Date Title
JP2021523292A (ja) ３ｄ ｎａｎｄ構造内にタングステンおよび他の金属を堆積させる方法
US10546751B2 (en) Forming low resistivity fluorine free tungsten film without nucleation
JP7092456B2 (ja) 連続ｃｖｄプロセスによる低フッ素タングステンの堆積
CN113424300B (zh) 在3d nand结构上的原子层沉积
JP2022510428A (ja) ボイドフリーの低応力充填
JP2017008412A5 (https=)
CN114678326A (zh) 用于在金属填充工艺期间防止线弯曲的方法
JP2022529056A (ja) 原子層堆積中の急速フラッシュパージング
US20250038050A1 (en) Feature fill with nucleation inhibition
CN119096326A (zh) 金属硅化物触点形成
JP2026510887A (ja) 低フッ素核形成層堆積のためのパルスａｌｄシーケンス
TW202436661A (zh) 低氟wn沉積的脈衝ald序列
US20240376598A1 (en) Process gas ramp during semiconductor processing
TW202401671A (zh) 高縱橫比3d nand結構中的鎢字元線填充
TW202444945A (zh) 利用抑制的特徵部填充
CN120882898A (zh) 氮化钨沉积序列
WO2026076266A1 (en) Loading sequence for wafer processing in multi-station module
CN120380195A (zh) 具有增强的热抑制的原子层沉积钨填充

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220421

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20220421

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20230606

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20230831

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20231206

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20240319

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240718

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20240725

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20241011

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20251202

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20260227