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  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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  • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
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  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
  • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
  • C23C16/14—Deposition of only one other metal element
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  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45523—Pulsed gas flow or change of composition over time
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  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45523—Pulsed gas flow or change of composition over time
  • C23C16/45525—Atomic layer deposition [ALD]
  • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
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  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/54—Apparatus specially adapted for continuous coating
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  • H10B—ELECTRONIC MEMORY DEVICES
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  • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
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  • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
  • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
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  • H10D64/00—Electrodes of devices having potential barriers
  • H10D64/01—Manufacture or treatment
  • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
  • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
  • H10D64/01332—Making the insulator
  • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
  • H10D64/01342—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid by deposition, e.g. evaporation, ALD or laser deposition
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  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
  • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
  • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
  • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
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  • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
  • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
  • H10P14/6326—Deposition processes
  • H10P14/6328—Deposition from the gas or vapour phase
  • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
  • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
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  • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
  • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
  • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
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  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
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  • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
  • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
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  • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
  • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
  • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers

Definitions

• tungsten- containing materials are an integral part of many semiconductor fabrication processes. These materials may be used for horizontal interconnects, vias between adjacent metal layers, and contacts between metal layers and devices.
• a conventional tungsten deposition process the substrate is heated to the process temperature in a vacuum chamber and a very thin portion of tungsten film that serves as a seed layer (also called a nucleation layer) is deposited. Thereafter, the remainder of the tungsten film (referred to as the bulk layer) is deposited on the nucleation layer by exposing the substrate to two reactants simultaneously in a chemical vapor deposition (CVD) process.
• the bulk layer is generally deposited more rapidly than the nucleation layer.
• CVD chemical vapor deposition
• One aspect of the disclosure relates to a method for filling structures with a metal -containing material, the method including: providing a structure to be filled with a metal -containing material, exposing the structure to multiple deposition cycles, with each deposition cycle including exposure to one or more alternating reducing agent (e.g. hydrogen (H 2 )) dose / inert gas purge pulses pulse followed by exposure to one or more alternating metal precursor dose pulses and inert gas purge pulses.
• alternating reducing agent e.g. hydrogen (H 2 )
• the metal may be tungsten (W) or molybdenum (Mo) in some embodiments.
• the structure is a partially fabricated three-dimension (3-D) NAND structure having sidewalls and a plurality of openings in the sidewalls leading to a plurality of features having a plurality of interior regions fluidically accessible through the openings.
• the metal precursor is a chlorine-containing metal precursor, such as tungsten hexachloride, tungsten pentachloride, tungsten tetrachhloride, molybdenum pentachloride, molybdenum dichloride dioxide, and molybdenum tetrachloride oxide, and mixtures thereof.
• a pulse of the chlorine-containing metal precursor comprises between about 0.1% and about 5.0% of chlorine-containing metal precursor by volume.
• the exposure to multiple alternating metal precursor pulses and inert gas purge pulses includes turning the inert gas purge flow off during the metal precursor pulses.
• the duration of an inert gas purge pulse is at least 1.5 times that of a metal precursor pulse.
• each deposition cycle comprises at least five or at least ten alternating metal precursor pulses and inert gas purge pulses.
• each deposition cycle includes only one H 2 pulse. In other embodiments, each deposition cycle includes multiple alternating H 2 and inert gas pulses.
• Another aspect of the disclosure relates to a method for filling structures with a metal -containing material, the method including: providing a structure to be filled with a metal -containing material, exposing the structure to multiple deposition cycles, with each deposition cycle including exposure to a reducing agent (e.g. hydrogen (3 ⁇ 4)) dose pulse followed by exposure to an inert gas pulse and exposure to multiple alternating metal precursor dose pulses and inert gas purge pulses.
• a reducing agent e.g. hydrogen (3 ⁇ 4)
• the structure is a partially fabricated three-dimension (3-D) NAND structure having sidewalls and a plurality of openings in the sidewalls leading to a plurality of features having a plurality of interior regions fluidically accessible through the openings.
• the metal precursor is a chlorine-containing metal precursor, such as tungsten hexachloride, tungsten pentachloride, tungsten tetrachhloride, molybdenum pentachloride, molybdenum dichloride dioxide, and molybdenum tetrachloride oxide, and mixtures thereof.
• a pulse of the chlorine-containing metal precursor comprises between about 0.1% and about 5.0% of chlorine-containing metal precursor by volume.
• the exposure to multiple alternating metal precursor pulses and inert gas purge pulses includes turning the inert gas purge flow off during the metal precursor pulses.
• the duration of an inert gas purge pulse is at least 1.5 times that of a metal precursor pulse.
• each deposition cycle comprises at least five or at least ten alternating metal precursor pulses and inert gas purge pulses.
• Another aspect of the disclosure relates to an apparatus including one or more process chambers each configured to hold a substrate; one or more process gas inlets for coupling to a reducing agent (e.g., hydrogen (3 ⁇ 4)) gas source, a metal precursor gas source, and an inert purge gas source; and a controller for controlling operations in the apparatus, comprising machine-readable instructions for performing multiple deposition cycles, wherein each deposition cycle comprises: inletting a hydrogen (H 2 ) pulse to the one or more process chambers via the one more process gas inlets; after inletting the H 2 pulse, inletting an inert purge gas pulse to the one or more process chamber via the one or more process gas inlets; after inletting the inert purge gas pulse, inletting multiple alternating metal precursor pulses and inert gas purge pulses to the one or more process chambers via the one or more purge gas inlets.
• a reducing agent e.g., hydrogen (3 ⁇ 4)
• the metal precursor is a chlorine-containing metal precursor.
• the instructions comprise instructions for turning the inert gas purge flow off during the metal precursor pulses.
• the duration of the inert gas purge pulse is at least 1.5 times that of the metal precursor pulses.
• each deposition cycle comprises at least five alternating metal precursor pulses and inert gas purge pulses. In some embodiments, each deposition cycle comprises at least ten alternating metal precursor pulses and inert gas purge pulses.
• Another aspect of the disclosure relates to a method for filling structures with a metal -containing material, the method including: providing a structure to be filled with a metal -containing material, exposing the structure to multiple deposition cycles, with each deposition cycle including exposure to multiple alternating hydrogen (H 2 ) pulses and inert gas pulses followed and exposure to metal precursor pulse followed by an inert gas purge pulse.
• the structure is a partially fabricated three-dimension (3-D) NAND structure having sidewalls and a plurality of openings in the sidewalls leading to a plurality of features having a plurality of interior regions fluidically accessible through the openings.
• the metal precursor is a chlorine-containing metal precursor.
• a pulse of the chlorine-containing metal precursor comprises between about 0.1% and about 5.0% of chlorine-containing metal precursor by volume.
• the exposure to multiple alternating H 2 pulses and inert gas purge pulses includes turning the inert gas purge flow off during the metal precursor pulses.
• each deposition cycle includes only one metal precursor pulse. In other embodiments, each deposition cycle includes multiple alternating metal precursor and inert gas pulses.
• Another aspect of the disclosure relates to an apparatus including one or more process chambers each configured to hold a substrate; one or more process gas inlets for coupling to a hydrogen (H 2 ) gas source, a metal precursor gas source, and an inert purge gas source; and a controller for controlling operations in the apparatus, comprising machine- readable instructions for performing multiple deposition cycles, wherein each deposition cycle comprises: inletting multiple alternating H 2 pulses and inert gas purge pulses to the one or more process chambers via the one or more purge gas inlets, and inletting a metal precursor pulse followed by an inert gas pulse.
• the metal precursor is a chlorine-containing metal precursor.
• the instructions comprise instructions for turning the inert gas purge flow off during the H 2 pulses.
• Figure 1 A is a schematic illustration of example films on a substrate.
• Figures 1B-1J are schematic examples of various structures in which tungsten or molybdenum may be deposited in accordance with certain disclosed embodiments.
• Figures 2A-2C is a process flow diagram depicting operations for methods in accordance with certain disclosed embodiments.
• Figure 3 is a timing sequence diagram showing example cycles in methods for depositing films in accordance with certain disclosed embodiments.
• Figures 4A-4J are schematic diagrams of an example of a mechanism for depositing films in accordance with certain disclosed embodiments.
• Figure 5 shows an illustration of experimental results comparing tungsten fill of 3-D NAND structures using a H2/Ar/WClx/Ar sequence and a H2/Ar/n(WClx/Ar) sequence.
• Figure 6 is a schematic diagram of an example process tool for performing certain disclosed embodiments.
• Figure 7 is a schematic diagram of an example station for performing certain disclosed embodiments.
• Figure 8 is a schematic diagram showing basic features of a manifold system that may be used in accordance with certain embodiments. DETAILED DESCRIPTION
• Tungsten (W) fill of features is often used in semiconductor device fabrication to form electrical contacts.
• a nucleation tungsten layer is first deposited into a via or contact.
• a nucleation layer is a thin conformal layer that serves to facilitate the subsequent formation of a bulk material thereon.
• the tungsten nucleation layer may be deposited to conformally coat the sidewalls and bottom of the feature. Conforming to the underlying feature bottom and sidewalls can be critical to support high quality deposition.
• Nucleation layers are often deposited using atomic layer deposition (ALD) or pulsed nucleation layer (PNL) methods.
• ALD atomic layer deposition
• PNL pulsed nucleation layer
• PNL pulses of reactant are sequentially injected and purged from the reaction chamber, typically by a pulse of a purge gas between reactants.
• a first reactant can be adsorbed onto the substrate, available to react with the next reactant.
• the process is repeated in a cyclical fashion until the desired thickness is achieved.
• PNL techniques are similar to ALD techniques. PNL is generally distinguished from ALD by its higher operating pressure range (greater than 1 Torr) and its higher growth rate per cycle (greater than 1 monolayer film growth per cycle). Chamber pressure during PNL deposition may range from about 1 Torr to about 400 Torr.
• PNL broadly embodies any cyclical process of sequentially adding reactants for reaction on a semiconductor substrate.
• CVD chemical vapor deposition
• PNL and ALD processes are distinct from CVD processes and vice versa.
• bulk tungsten is typically deposited by a CVD process by reducing tungsten hexafluoride (WF 6 ) using a reducing agent such as hydrogen (H 2 ).
• WF 6 tungsten hexafluoride
• H 2 hydrogen
• Bulk tungsten is different from a tungsten nucleation layer.
• Bulk tungsten as used herein refers to tungsten used to fill most or all of a feature, such as at least about 50% of the feature.
• bulk tungsten is used to carry current. It may be characterized by larger grain size and lower resistivity as compared to a nucleation film.
• bulk tungsten is tungsten deposited to a thickness of at least 50 A.
• One method of preventing fluorine diffusion includes depositing one or more barrier layers prior to depositing tungsten to prevent fluorine from diffusing from tungsten to other layers of the substrate such as an oxide layer.
• Figure 1A shows an example stack of layers deposited on a substrate.
• Substrate 190 includes a silicon layer 192, an oxide layer 194 (e.g., titanium oxide (TiOx), tetraethyl orthosilicate (TEOS) oxide, etc.), a barrier layer 196 (e.g., titanium nitride (TiN)), a tungsten nucleation layer 198, and a bulk tungsten layer 199.
• oxide layer 194 e.g., titanium oxide (TiOx), tetraethyl orthosilicate (TEOS) oxide, etc.
• a barrier layer 196 e.g., titanium nitride (TiN)
• TiN titanium nitride
• Barrier layer 196 is deposited to prevent fluorine diffusion from the bulk tungsten layer 199 and the tungsten nucleation layer 198 to the oxide layer. However, as devices shrink, barrier layers become thinner, and fluorine may still diffuse from the deposited tungsten layers. Although chemical vapor deposition of bulk tungsten performed at a higher temperature results in lower fluorine content, such films may have poor step coverage.
• Fluorine-free tungsten (FFW) precursors are useful to prevent such reliability and integration issues or device performance issues.
• Current FFW precursors include metal organic precursors, but undesirable traces of elements from the metal organic precursors may be incorporated in the tungsten film as well, such as carbon, hydrogen, nitrogen, and oxygen.
• Some metal organic fluorine-free precursors are also not easily implemented or integrated in tungsten deposition processes.
• Tungsten chloride includes tungsten pentachloride (WCl 5 ), tungsten hexachloride (WCl 6 ), tungsten tetrachloride (WCl 4 ), tungsten dichloride (WCl 2 ), and mixtures thereof.
• Wl 5 tungsten pentachloride
• Wl 6 tungsten hexachloride
• Wl 4 tungsten tetrachloride
• WCl 2 tungsten dichloride
• films deposited using certain disclosed embodiments are fluorine-free. Certain disclosed embodiments are directed to depositing bulk tungsten using alternating pulses of a chlorine-containing tungsten precursor and hydrogen.
• Deposition by WC1 5 and WC1 6 presents challenges that are not present with WF 6 , due to possible etching by the tungsten chlorides. Tungsten chlorides are less reactive, and as a result, deposition is performed at higher temperature than deposition using WF 6 . Evaporated WC1 6 has a high enough vapor pressure to enable carrying it into the tungsten deposition chamber. However, WC1 6 may be more likely to etch the substrate than WC1 5 . While WC1 5 is less likely to etch the substrate, WC1 5 also has a higher vapor pressure than WC1 6 . Although the lower vapor pressure is useful in depositing tungsten films having low resistivity, some deposition operations may have poor step coverage.
• Molybdenum may be used to form low resistance metallization stack structures and may take the place of tungsten.
• the disclosed embodiments have a wide variety of applications. Methods may be used to deposit tungsten or molybdenum into features with high step coverage, and may also be used to deposit tungsten into 3D NAND structures. [0031] The methods described herein are performed on a substrate that may be housed in a chamber.
• the substrate may be a silicon or other semiconductor wafer, e.g., a 200-mm wafer, a 300-mm wafer, or a 450-mm wafer, including wafers having one or more layers of material, such as dielectric, conducting, or semi-conducting material deposited thereon.
• the methods are not limit to semiconductor substrates, and may be performed to fill any feature with metal such as tungsten.
• Substrates may have features such as via or contact holes, which may be characterized by one or more of narrow and/or re-entrant openings, constrictions within the feature, and high aspect ratios.
• a feature may be formed in one or more of the above described layers.
• the feature may be formed at least partially in a dielectric layer.
• a feature may have an aspect ratio of at least about 2: 1, at least about 4: 1, at least about 6: 1, at least about 10: 1, at least about 25: 1, or higher.
• One example of a feature is a hole or via in a semiconductor substrate or a layer on the substrate.
• Figures 1B-1H are schematic examples of various structures in which a metal may be deposited in accordance with disclosed embodiments.
• Figure 1B shows an example of a cross-sectional depiction of a vertical feature 101 to be filled with a metal, such as tungsten or molybdenum.
• the feature can include a feature hole 105 in a substrate 103.
• the hole 105 or other feature may have a dimension near the opening, e.g., an opening diameter or line width of between about 10 nm to 500 nm, for example between about 25 nm and about 300 nm.
• the feature hole 105 can be referred to as an unfilled feature or simply a feature.
• the feature 101, and any feature may be characterized in part by an axis 118 that extends through the length of the feature, with vertically-oriented features having vertical axes and horizontally-oriented features having horizontal axes.
• features are wordline features in a 3D NAND structure.
• a substrate may include a wordline structure having an arbitrary number of wordlines (e.g., 50 to 150) with vertical channels at least 200A deep.
• wordlines e.g., 50 to 150
• trench in a substrate or layer e.g., a trench in a substrate or layer.
• the feature may have an under-layer, such as a barrier layer or adhesion layer.
• under-layers include dielectric layers and conducting layers, e.g., silicon oxides, silicon nitrides, silicon carbides, metal oxides, metal nitrides, metal carbides, and metal layers.
• Figure 1C shows an example of a feature 101 that has a re-entrant profile.
• a re entrant profile is a profile that narrows from a bottom, closed end, or interior of the feature to the feature opening. According to various implementations, the profile may narrow gradually and/or include an overhang at the feature opening.
• Figure 1C shows an example of the latter, with an under-layer 113 lining the sidewall or interior surfaces of the feature hole 105.
• the under-layer 113 can be for example, a diffusion barrier layer, an adhesion layer, a nucleation layer, a combination of thereof, or any other applicable material.
• Non-limiting examples of under-layers can include dielectric layers and conducting layers, e.g., silicon oxides, silicon nitrides, silicon carbides, metal oxides, metal nitrides, metal carbides, and metal layers.
• an under-layer can be one or more of titanium, titanium nitride, tungsten nitride, titanium aluminide, tungsten, and molybdenum.
• the under-layer is tungsten- free.
• the under-layer is molybdenum-free.
• the under-layer 113 forms an overhang 115 such that the under-layer 113 is thicker near the opening of the feature 101 than inside the feature 101.
• FIG. 1D shows examples of views of various filled features having constrictions.
• Each of the examples (a), (b) and (c) in Figure 1D includes a constriction 109 at a midpoint within the feature.
• the constriction 109 can be, for example, between about l5 nm-20 nm wide.
• Constrictions can cause pinch off during deposition of tungsten or molybdenum in the feature using conventional techniques, with deposited metal blocking further deposition past the constriction before that portion of the feature is filled, resulting in voids in the feature.
• Example (b) further includes a liner/barrier overhang 115 at the feature opening. Such an overhang could also be a potential pinch-off point.
• Example (c) includes a constriction 112 further away from the field region than the overhang 115 in example (b).
• FIG. 1E shows an example of a horizontal feature 150 that includes a constriction 151.
• horizontal feature 150 may be a word line in a 3D NAND structure.
• the constrictions can be due to the presence of pillars in a 3D NAND or other structure.
• Figure 1F presents a cross-sectional side-view of a 3-D NAND (also referred to as vertical NAND or VNAND) structure 110 (formed on a semiconductor substrate 103) having VNAND stacks (left 125 and right 126), central vertical structure 130, and a plurality of stacked horizontal features 120 with openings 122 on opposite sidewalls 140 of central vertical structure 130.
• a 3-D NAND also referred to as vertical NAND or VNAND
• Figure 1F displays two“stacks” of the exhibited 3-D NAND structure 110, which together form the“trench-like” central vertical structure 130, however, in certain embodiments, there may be more than two “stacks” arranged in sequence and running spatially parallel to one another, the gap between each adjacent pair of “stacks” forming a central vertical structure 130, like that explicitly illustrated in Figure 1F.
• the horizontal features 120 are 3-D memory wordline features that are fluidically accessible from the central vertical structure 130 through the openings 122.
• each 3-D NAND stack 125, 126 contains a stack of wordline features that are fluidically accessible from both sides of the 3-D NAND stack through a central vertical structure 130.
• each 3-D NAND stack contains 6 pairs of stacked wordlines, however, in other embodiments, a 3-D NAND memory layout may contain any number of vertically stacked pairs of wordlines.
• the wordline features in a 3-D NAND stack are typically formed by depositing an alternating stack of silicon oxide and silicon nitride layers, and then selectively removing the nitride layers leaving a stack of oxides layers having gaps between them. These gaps are the wordline features.
• Any number of wordlines may be vertically stacked in such a 3-D NAND structure so long as there is a technique for forming them available, as well as a technique available to successfully accomplish (substantially) void-free fills of the vertical features.
• a VNAND stack may include between 2 and 256 horizontal wordline features, or between 8 and 128 horizontal wordline features, or between 16 and 64 horizontal wordline features, and so forth (the listed ranges understood to include the recited end points).
• Figure 1G presents a cross-sectional top-down view of the same 3-D NAND structure 110 shown in side-view in Figure 1F with the cross-section taken through the horizontal section 160 as indicated by the dashed horizontal line in Figure 1F.
• the cross-section of Figure 1G illustrates several rows of pillars 155, which are shown in Figure 1F to run vertically from the base of semiconductor substrate 103 to the top of 3-D NAND stack 110.
• these pillars 155 are formed from a polysilicon material and are structurally and functionally significant to the 3-D NAND structure 110.
• such polysilicon pillars may serve as gate electrodes for stacked memory cells formed within the pillars.
• FIG. 1G The top-view of Figure 1G illustrates that the pillars 155 form constrictions in the openings 122 to wordline features 120 - i.e. fluidic accessibility of wordline features 120 from the central vertical structure 130 via openings 122 (as indicated by the arrows in Figure 1G) is inhibited by pillars 155.
• the size of the horizontal gap between adjacent polysilicon pillars is between about 1 and 20 nm. This reduction in fluidic accessibility increases the difficulty of uniformly filling wordline features 120 with tungsten material.
• the structure of wordline features 1 and the challenge of uniformly filling them with tungsten material or molybdenum material due to the presence of pillars 155 is further illustrated in Figures 1H, II, and 1J.
• Figure 1H exhibits a vertical cut through a 3-D NAND structure similar to that shown in Figure 1F, but here focused on a single pair of wordline features 120 and additionally schematically illustrating a metal fill process which resulted in the formation of a void 175 in the filled wordline features 120.
• Figure II also schematically illustrates void 175, but in this figure illustrated via a horizontal cut through pillars 155, similar to the horizontal cut exhibited in Figure 1G.
• Figure 1J illustrates the accumulation of tungsten or molybdenum material around the constriction-forming pillars 155, the accumulation resulting in the pinch-off of openings 122, so that no additional tungsten or molybdenum material can be deposited in the region of voids 175.
• Figure 1 J exhibits a single wordline feature 120 viewed cross-sectionally from above and illustrates how a generally conformal deposition of tungsten or molybdenum material begins to pinch- off the interior of wordline feature 120 due to the fact that the significant width of pillars 155 acts to partially block, and/or narrow, and/or constrict what would otherwise be an open path through wordline feature 120.
• Figure 1J can be understood as a 2-D rendering of the 3-D features of the structure of the pillar constrictions shown in Figure II, thus illustrating constrictions that would be seen in a plan view rather than in a cross- sectional view.
• Three-dimensional structures may need longer and/or more concentrated exposure to precursors to allow the innermost and bottommost areas to be filled. Three-dimensional structures can be particularly challenging when employing WCl x precursors because of their proclivity to etch, with longer and more concentrated exposure allowing for more etch as parts of the structure. These challenges may also be present with molybdenum chloride precursors.
• Examples of feature fill for horizontally-oriented and vertically-oriented features are described below. It should be noted that in most cases, the examples are applicable to both horizontally-oriented or vertically-oriented features.
• the term“lateral” may be used to refer to a direction generally orthogonal to the feature axis and the term“vertical” to refer to a direction generally along the feature axis.
• the methods described below involve exposing a structure to multiple reducing agent/purge cycles and/or multiple metal -precursor/purge cycles within an cycle.
• reducing agent/purge cycles and/or multiple metal -precursor/purge cycles within an cycle.
• metal -precursor/purge cycles within an cycle.
• multiple tungsten- containing precursor doses interspersed with purge gas pulsing e.g., W/Ar/W/Ar/W/Ar/W/Ar, where W represents a pulse of a tungsten-containing precursor and Ar a pulse of an argon purge gas
• W represents a pulse of a tungsten-containing precursor
• Ar a pulse of an argon purge gas
• multiple molybdenum-containing precursor doses interspersed with purge gas pulsing e.g., Mo/Ar/Mo/Ar/Mo/Ar/Mo/Ar, where Mo represents a pulse of a molybdenum-containing precursor and Ar a pulse of an argon purge gas
• purge gas pulsing e.g., Mo/Ar/Mo/Ar/Mo/Ar/Mo/Ar, where Mo represents a pulse of a molybdenum-containing precursor and Ar a pulse of an argon purge gas
• the inert gas purge pulse after each metal -containing pulse can ensure that a monolayer of metal -containing precursor is adsorbed throughout the structure.
• the multiple pulses, each followed by a purge gas ensure that multiple monolayers of the metal -containing precursor do not build up at the parts of the structure that are more accessible. This can prevent undesired etching of the structure.
• having alternate pulses enables pressurization of a metal precursor reservoir before each pulse. This can aid in flux to the bottom of the feature.
• multiple reducing agent doses interspersed with purge gas pulses pulsing e.g., H 2 /Ar/H 2 /Ar/W/Ar/W/Ar, where H 2 is the reducing agent, W represents a pulse of a tungsten- containing precursor and Ar a pulse of an argon purge gas or H 2 /Ar/H 2 /Ar/Mo/Ar/Mo/Ar where Mo represents a pulse of molybdenum-containing precursor
• H 2 /Ar/H 2 /Ar/W/Ar/W/Ar where H 2 is the reducing agent
• W represents a pulse of a tungsten- containing precursor
• Ar a pulse of an argon purge gas or H 2 /Ar/H 2 /Ar/Mo/Ar/Mo/Ar where Mo represents a pulse of molybdenum-containing precursor
• tungsten feature fill and molybdenum feature fill aspects of the disclosure may also be implemented in filling features with other materials.
• feature fill using one or more techniques described herein may be used to fill features with other materials including other tungsten-containing materials (e.g., tungsten nitride (WN) and tungsten carbide (WC)), titanium-containing materials (e.g., titanium (Ti), titanium nitride (TiN), titanium silicide (TiSi), titanium carbide (TiC) and titanium aluminide (TiAl)), tantalum-containing materials (e.g., tantalum (Ta), and tantalum nitride (TaN)), and nickel -containing materials (e.g., nickel (Ni) and nickel silicide (NiSi).
• the methods and apparatus disclosed herein are not limited to feature fill, but can be used to deposit tungsten on any appropriate surface including forming blanket films on planar
• Figures 2A-2C provide process flow diagrams for methods performed in accordance with disclosed embodiments. As described below, the method is performed to fill a structure on a substrate with tungsten. Examples of structures are described above with reference to Figures 1B-1H.
• Temperature may vary depending on the chemistry employed.
• WCl x and WO x Cl 4 precursors certain disclosed embodiments may be performed at a substrate temperature between about 400°C and about 600°C, such as about 525°C.
• substrate temperature refers to the temperature to which the pedestal holding the substrate is set.
• certain disclosed embodiments may be performed at a substrate temperature between about 400°C and about 600°C, such as about 525°C.
• substrate temperature refers to the temperature to which the pedestal holding the substrate is set.
• Certain disclosed embodiments may be performed at a chamber pressure between about 3 Torr and about 60 Torr.
• the chamber pressure for tungsten deposition using WCl x precursors is between 5 Torr and 20 Torr, e.g., 10 Torr.
• a structure to be filled with tungsten or molybdenum is exposed to a reducing agent pulse.
• the reducing agent pulse is hydrogen (H 2 ).
• Other reducing agents including silanes, boranes, germanes, phosphines, hydrogen- containing gases, and combinations thereof, may be used.
• bulk tungsten deposition or bulk molybdenum deposition is performed using hydrogen as a reducing agent.
• the reducing agent is pulsed without flowing another reactant.
• a carrier gas may be flowed.
• a carrier gas such as nitrogen (N 2 ), argon (Ar), helium (He), or other inert gases, may be flowed during operation 200.
• Operation 200 may be performed for any suitable duration.
• Example durations include between about 0.25 seconds and about 30 seconds, about 0.25 seconds and about 20 seconds, about 0.25 seconds and about 5 seconds, or about 0.5 seconds and about 3 seconds.
• the chamber is purged to remove excess hydrogen that did not adsorb to the surface of the substrate.
• a purge may be conducted by flowing an inert gas at a fixed pressure thereby reducing the pressure of the chamber and re-pressurizing the chamber before initiating another reactant gas exposure.
• Example inert gases include nitrogen (N 2 ), argon (Ar), helium (He), and mixtures thereof.
• the purge may be performed for a duration between about 0.25 seconds and about 30 seconds, about 0.25 seconds and about 20 seconds, about 0.25 seconds and about 5 seconds, or about 0.5 seconds and about 3 seconds.
• Operations 200 and 202 are then repeated until they are performed k times, where k is an integer of at least 21.
• operation 200 may have a duration of 0.5 seconds, and operation 202 a duration of 1 seconds between reducing agent pulses.
• Example precursors include chlorine-containing tungsten precursors such as tungsten chlorides and tungsten oxychlorides.
• Tungsten chlorides may be WC1 , where x is an integer between and including 2 and 6, such as 2, 3, 4, 5, or 6. Examples include WCl 5 and WCl 6 .
• the chlorine-containing tungsten precursor may include a mixture of WCl x compounds.
• Tungsten oxychlorides include WO x Cl y where x and y are numbers greater than 0.
• Molybdenum precursors including molybdenum chlorides and molybdenum oxychlorides are used to deposit molybdenum. These include molybdenum pentachloride (MoCl 5 ), molybdenum dichloride dioxide (Mo0 2 Cl 2 ), molybdenum tetrachloride oxide (MoOCl 4 ).
• a carrier gas such as nitrogen (N 2 ), argon (Ar), helium (He), or other inert gases, may be flowed during operation 206.
• Operation 204 may be performed for any suitable duration and at any suitable temperature.
• operation 206 may be performed for a duration between about 0.25 seconds and about 30 seconds, about 0.25 seconds and about 20 seconds, about 0.25 seconds and about 5 seconds, or about 0.5 seconds and about 3 seconds. This operation may be performed in some embodiments for a duration sufficient to saturate the active sites on the surface of the substrate.
• the precursor may be diverted to fill the gas line and line change before dosing.
• the carrier gas may be any of those described above with respect to operation 202.
• some WCl x may react with H 2 that remains on the surface from operation 200 and some WCl x may not fully react with H 2 that remained on the surface. Also in various embodiments, some H 2 may not react with WCl x at all and WCl x may instead be physisorbed onto the surface of the substrate where no H 2 is physisorbed or remains on the substrate surface. In some embodiments, H 2 may remain on the substrate surface but may not be physisorbed or chemisorbed to the surface. Operation 204 of Figure 2A may thereby form a sub-monolayer of tungsten in some embodiments. Similarly, operation 204 may form a sub-monolayer of molybdenum in some embodiments.
• a purge is performed to purge excess precursor still in gas phase that did not react with hydrogen or other reducing agent on the surface of the feature.
• a purge may be conducted by flowing an inert gas at a fixed pressure thereby reducing the pressure of the chamber and re-pressurizing the chamber before initiating another gas exposure.
• the chamber may be purged for any suitable duration.
• the chamber may be purged for a duration between about 0.25 seconds and about 30 seconds, about 0.25 seconds and about 20 seconds, about 0.25 seconds and about 5 seconds, or about 0.5 seconds and about 3 seconds.
• the purge duration is between about 0.1 seconds and about 2 seconds and may prevent removing all of the WCl x or other precursor from the substrate surface due to the low adsorption rate of WCl x to a surface of tungsten.
• purge duration is between about 0.1 seconds and about 15 seconds, such as about 7 seconds.
• the chamber may be purged for about 2 seconds during operation 206.
• the purge gas may be any of the gases described above with respect to operation 202.
• Operations 204 and 206 are then repeated until they are performed n times, where n is an integer of at least 2.
• n is an integer of at least 2.
• operation 204 may have a duration of 0.7 seconds
• operation 206 a duration of 2 seconds between tungsten precursor pulses.
• n 10
• a total purge time of 2 x 10 20 seconds.
• operation 208 it is determined whether the tungsten or molybdenum layer has been deposited to an adequate thickness. If not, operations 200-206 are repeated until a desired thickness of a tungsten or molybdenum layer is deposited on the surface of the feature. Each repetition of operations 200-206 may be referred to as a“cycle.” In some embodiments, the order of operations 200/202 and 204/206 may be reversed, such that a tungsten or molybdenum precursor is introduced prior to the introduction of a reducing agent.
• Figure 2B provides a process flow diagram for embodiments in which each ALD cycle includes a single reducing agent pulse and multiple tungsten or molybdenum precursor pulses, such that operations 200 and 202 are not repeated during the cycle.
• Figure 2C provides a process flow diagram for embodiments in which each ALD cycle includes a single tungsten or molybdenum precursor pulse and multiple reducing agent pulses such that operations 204 and 206 are not repeated during the cycle.
• the process blocks in Figures 2B and 2C are otherwise as described above with respect to Figure 2A.
• Figure 3 provides a timing sequence diagram depicting example deposition cycles 311A and 311B in a process for depositing tungsten using H 2 and WCl x .
• Figure 3 shows H 2 pulse in deposition cycle 311A which is an example of an embodiment of operation 200 of Figures 2A-2C.
• the Ar and WCl x flows are turned off.
• a purge gas may continue to flow during the reducing agent pulse.
• turning the purge gas off during the reducing agent pulse is beneficial to increase exposure to the reducing agent.
• an Ar pulse is shown. This is an example of an embodiment of operation 202 of Figures 2A-2C.
• the H 2 and WCl x flows are turned off.
• the dotted box indicates an arbitrary number of H 2 /Ar purge pulses that are then performed without an intervening tungsten precursor pulse. This is an example of an embodiment of operations 200 and 202 of Figures 2A and 2C. Five H 2 /Ar pulse sequences are shown, but the number of H 2 /Ar pulse sequences can range from one to k as described above.
• the dotted box at 340 indicates the repeated WC1 /Ar purge pulses that are then performed without an intervening reducing agent pulse. This is an example of an embodiment of operations 204 and 206 of Figures 2A and 2B.
• Ar flow may remain on during H 2 and/or WCl x pulses, with Ar pulses characterized by no H 2 and WCl x flows and in some embodiments, increased Ar flow.
• Fill of 3-D NAND structures benefit from higher W concentration at the wafer; diluting it will result in poor fill.
• turning the purge gas off and pressuring the purge manifold during the tungsten precursor pulse enables a more efficient purging of the chamber than a continuous purge flow with W pulses in between.
• an Ar pulse concludes deposition cycle 311 A.
• WCl x is shown in the example of Figure 3 for illustrative purposes, the timing sequence in Figure 3 may be used for other precursors including tungsten oxychloride precursors and molybdenum chloride and molybdenum oxychloride precursors.
• other purge gases and/or other reducing agents may be used instead of Ar and H 2 .
• Figures 4A-4J are schematic illustrations of an example mechanism of a deposition cycle in the deposition of tungsten from WCl 6 .
• Figure 4A depicts an example mechanism where H 2 is introduced to the substrate 400, which has an underlayer 401 deposited thereon.
• Underlayer 401 may be a barrier layer in some embodiments.
• underlayer 401 is a titanium nitride (TiN) layer.
• the substrate 400 does not include a tungsten nucleation layer. In other embodiments, it may include a tungsten nucleation layer.
• Hydrogen is introduced in gas phase (41 la and 41 lb) and some H 2 (4l3a and 4l3b) is on the surface of the underlayer 401, where it may catalyti cully dissociate into chemically active adsorbed atomic hydrogen on metal surfaces (e.g. H 2 ) or physisorb on catalyti cully inactive surfaces (e.g. TiN).
• H 2 may not necessarily chemisorb onto the underlayer 401, but in some embodiments, may physisorb onto the surface of the underlayer 401.
• Figure 4B shows an example illustration whereby H 2 previously in gas phase (41 la and 41 lb in Figure 4A) are purged from the chamber, and H 2 previously on the surface (443a and 413b) remain on the surface of the underlayer 401.
• Figure 4C shows an example schematic illustration whereby the substrate is exposed to WCl 6 , some of which is in gas phase (43 la and 43 lb) and some of which is at or near the surface of the substrate (423a and 423b).
• H 2 may react with WCl 6 that remained on the surface from the prior dose.
• WCl 6 may react with H 2 to temporarily form intermediate 443b, whereby in Figure 4E, intermediate 443b fully reacts to leave tungsten 490 on the surface of the substrate 400 on the underlayer 401, and HC1 in gas phase (45 la and 45 lb, for example).
• tungsten 490 grows directly on the underlayer 401 without depositing a nucleation layer and without treating the underlayer 401 prior to depositing tungsten.
• the underlayer 401 may be exposed to a soak treatment, such as by exposing to diborane.
• the underlayer 401 may have been previously treated with a mixture of Sil3 ⁇ 4, B 2 H , and H 2 to form a solid Si-B-H interfacial surface layer that can react sacrificially during subsequent WClx -H 2 exposures.
• the stoichiometry of the Si-B-H layers can vary greatly from low (10%) to high (95%) boron concentration.
• H 2 may not fully react with WCl 6 (or other W chlorides) that remained on the surface from the prior dose.
• WCl 6 may partially react with H 2 to form intermediate 443a, whereby in Figure 4E, intermediate 443a remains partially reacted on the surface of the substrate 400 on the underlayer 401.
• the film deposited using a chlorine-containing tungsten precursor and hydrogen has a lower resistivity than a film deposited using a borane, silane, or germane, for deposition thicknesses up to about 50A.
• the stoichiometry of WCl 6 may use at least three H 2 molecules to react with one molecule of WCl 6 . It is possible that WCl 6 partially reacts with molecules of H 2 but rather than forming tungsten, an intermediate is formed. For example, this may occur if there is not enough H 2 in its vicinity to react with WCl 6 based on stoichiometric principles (e.g., three H 2 molecules are used to react with one molecule of WCl 6 ) thereby leaving an intermediate 343a on the surface of the substrate.
• stoichiometric principles e.g., three H 2 molecules are used to react with one molecule of WCl 6
• Tungsten chlorides may be chemically inert to molecular H 2 and require the presence of adsorbed atomic hydrogen created by the catalytic dissociation of molecular H 2 . In this case large excesses of molecular H 2 beyond simple stoichiometric ratios may be required to fully reduce tungsten chlorides to metallic tungsten (molecular H 2 / WClx ratios of lOO’s to 1).
• Figure 4F provides an example schematic of the substrate when the chamber is purged. This may correspond to operation 202 of Figures 2A-2C. Note that compound 443c of Figure 4F may be an intermediate formed but not completely reacted, while some tungsten 490 may be formed on the substrate. Each cycle thereby forms a sub-monolayer of tungsten on the substrate.
• Figure 4G shows an illustration when a cycle is repeated, whereby H 2 41 lc in gas phase is introduced to the substrate with the deposited tungsten 490 and the partially reacted intermediate 443d thereon.
• This may correspond to operation 200 of Figures 2A-2C in a repeated cycle after determining in operation 208 that tungsten has not been deposited to an adequate thickness.
• the H 2 introduced may now fully react with the intermediate 443d on the substrate such that, as shown in Figure 4H, the reacted compound 443d leaves behind deposited tungsten 490b and 490c, and byproducts HC1 45 lc and 45 ld are formed in gas phase.
• Some H 2 4l lc may remain in gas phase, while some H 2 4l3c may remain on the tungsten layer 490a.
• the chamber is purged (thereby corresponding with operation 202 of Figures 2A-2C), leaving behind deposited tungsten 490a, 490b, and 490c, and some H 2 4l3c.
• WCl 6 is again introduced in a dose such that molecules 43 lc and 423c may then adsorb and/or react with H 2 and the substrate.
• Figure 4J may correspond to operation 204 of Figures 2A-2C.
• the chamber may again be purged and cycles may be repeated again until the desired thickness of tungsten is deposited.
• Tungsten films deposited using certain disclosed embodiments have no fluorine content. Molybdenum films may also have no fluorine content. Overall tensile stress of films may be less than about 0.2 GPa.
• Fluorine-free tungsten precursors may include tungsten carbonyl (W(CO) 6 ) and tungsten chlorides (WCl x ) such as tungsten pentachloride (WCl 5 ) and tungsten hexachloride (WCl 6 ).
• Fluorine-free molybdenum precursors include the molybdenum oxychloride and molybdenum chloride precursors described herein as well as molybdenum hexacarbonyl (Mo(CO) 6 ).
• a feature may be filled by depositing a tungsten nucleation layer by ALD cycles of alternating pulses of a reducing agent (e.g., a borane, a silane, or a germane with hydrogen) and a tungsten precursor such as WCl 6 , followed by bulk tungsten deposition by alternating pulses of hydrogen and a chlorine-containing tungsten precursor as described above with respect to Figures 2 and 3.
• a reducing agent e.g., a borane, a silane, or a germane with hydrogen
• a tungsten precursor such as WCl 6
• a feature may be filled by depositing a molybdenum layer by ALD cycles of alternating pulses of a reducing agent and a molybdenum precursor.
• ALD processes due to the alternating pulses of reactants.
• the methods described herein typically involve purging between reactant cycles to ensure that there is no growth component from a CVD mechanism.
• the methods may be used with“sequential CVD” processes as described in U.S. Patent Publication No. 20170117155 and U.S. Patent No. 9,613,818, both of which are incorporated herein by reference.
• a the precursor can be delivered deep into 3D NAND wordlines with minimizing etching at the top and lateral edges of the structures.
• a monolayer or sub- monolayer of the precursor can be adsorbed throughout the structure.
• having alternate precursor and purge pulses enables a precursor reservoir to be pressurized before precursor dose delivery. This can result in better transport into the structure.
• Table 1 shows conditions and resulting TiN underlayer etch for 300 Angstrom PVD TiN blanket films exposed to a H 2 /Ar/WC1 /Ar sequence and a H 2 /Ar///(WC1 /Ar) sequence, with n equal to 10.
• FIG. 5 shows a schematic illustration of experimental results comparing tungsten fill of 3-D NAND structures using a H 2 /Ar/WC Ar sequence and a H 2 /Ar///(WC1 /Ar) sequence.
• a nucleation layer was deposited in each structure prior to these sequences.
• the illustrations in Figure 5 are representative of cross-sections from the middle sections of 3-D NAND structures.
• the total tungsten precursor exposure in Torr-s was the same for both 501 and 503.
• Each of the n tungsten pulses is short and may be delivered at a constant pressure.
• the total amount of tungsten precursor is sufficient for the tungsten precursor to reach the bottom of the structure and to provide enough material to coat the entire structure laterally.
• the intervening inert gas purge may remove the tungsten precursor at the top and edges of structure, reducing or eliminating substrate etch. If there is not a sufficient inert gas purge, this beneficial effect may not be observed. Further, a pinching effect at peripheral openings may be observed for insufficient purge between multiple tungsten pulses.
• the duration of the inert gas purge is at least as long as the tungsten or molybdenum precursor duration. In some embodiments, the inert gas purge is at least 1.5 times, or at least 2 times, or at least 3 times the duration of the tungsten or molybdenum precursor pulse.
• the purge gas to precursor exposure may also be characterized in terms of partial pressure x duration. The purge may be performed with 100% purge gas, with a precursor diluted to 1% to 5% of flow.
• Disclosed embodiments may be performed at any suitable pressure, such as pressures greater than about 10 Torr, or pressures less than about 10 Torr.
• each pedestal may be set at different temperatures. In some embodiments, each pedestal is set at the same temperature.
• Chamber pressure may also be modulated in one or more operations of certain disclosed embodiments.
• chamber pressure during nucleation deposition is different from chamber pressure during bulk deposition.
• chamber pressure during nucleation deposition is the same as the chamber pressure during bulk deposition.
• Example deposition apparatuses include various systems, e.g., ALTUS ® and ALTUS ® Max, available from Lam Research Corp., of Fremont, California, or any of a variety of other commercially available processing systems.
• sequential chemical vapor deposition (CVD) may be performed at a first station that is one of two, five, or even more deposition stations positioned within a single deposition chamber.
• hydrogen (H 2 ) and tungsten hexachloride (WCl 6 ) may be introduced in alternating pulses to the surface of the semiconductor substrate, at the first station, using an individual gas supply system that creates a localized atmosphere at the substrate surface.
• Another station may be used for fluorine-free tungsten deposition, or CVD.
• Two or more stations may be used to deposit tungsten in a parallel processing.
• a wafer may be indexed to have the sequential CVD operations performed over two or more stations sequentially.
• FIG. 6 is a schematic of a process system suitable for conducting deposition processes in accordance with embodiments.
• the system 600 includes a transfer module 603.
• the transfer module 603 provides a clean, pressurized environment to minimize risk of contamination of substrates being processed as they are moved between various reactor modules.
• Mounted on the transfer module 603 is a multi-station reactor 609 capable of performing ALD and CVD according to various embodiments.
• Multi-station reactor 609 may include multiple stations 611, 613, 615, and 617 that may sequentially perform operations in accordance with disclosed embodiments.
• multi-station reactor 609 may be configured such that station 611 performs a PNL tungsten nucleation layer deposition using a chlorine-containing tungsten precursor or a fluorine-containing precursor, and station 613 performs an ALD tungsten deposition operation according to various embodiments.
• station 615 may also form an ALD tungsten deposition operation, and station 617 may perform a non- sequential CVD operation.
• the number ( n ) of tungsten precursor pulses may be varied from station 613 to 615.
• Stations may include a heated pedestal or substrate support, one or more gas inlets or showerhead or dispersion plate.
• An example of a deposition station 700 is depicted in Figure 7, including substrate support 702 and showerhead 703.
• a heater may be provided in pedestal portion 701.
• the transfer module 503 may be one or more single or multi-station modules 607 capable of performing plasma or chemical (non-plasma) pre-cleans, other deposition operations, or etch operations.
• the module may also be used for various treatments to, for example, prepare a substrate for a deposition process.
• the system 600 also includes one or more wafer source modules 601, where wafers are stored before and after processing.
• An atmospheric robot (not shown) in the atmospheric transfer chamber 619 may first remove wafers from the source modules 601 to loadlocks 621.
• a wafer transfer device (generally a robot arm unit) in the transfer module 603 moves the wafers from loadlocks 621 to and among the modules mounted on the transfer module 603.
• a system controller 629 is employed to control process conditions during deposition.
• the controller 629 will typically include one or more memory devices and one or more processors.
• a processor may include a CPU or computer, analog and/or digital input/output connections, stepper motor controller boards, etc.
• the controller 629 may control all of the activities of the deposition apparatus.
• the system controller 629 executes system control software, including sets of instructions for controlling the timing, mixture of gases, chamber pressure, chamber temperature, wafer temperature, radio frequency (RF) power levels, wafer chuck or pedestal position, and other parameters of a particular process.
• RF radio frequency
• Other computer programs stored on memory devices associated with the controller 629 may be employed in some embodiments.
• the user interface may include a display screen, graphical software displays of the apparatus and/or process conditions, and user input devices such as pointing devices, keyboards, touch screens, microphones, etc.
• System control logic may be configured in any suitable way.
• the logic can be designed or configured in hardware and/or software.
• the instructions for controlling the drive circuitry may be hard coded or provided as software.
• the instructions may be provided by“programming.” Such programming is understood to include logic of any form, including hard coded logic in digital signal processors, application-specific integrated circuits, and other devices which have specific algorithms implemented as hardware. Programming is also understood to include software or firmware instructions that may be executed on a general purpose processor.
• System control software may be coded in any suitable computer readable programming language.
• the computer program code for controlling the germanium-containing reducing agent pulses, hydrogen flow, and tungsten- containing precursor pulses, and other processes in a process sequence can be written in any conventional computer readable programming language: for example, assembly language, C, C++, Pascal, Fortran, or others. Compiled object code or script is executed by the processor to perform the tasks identified in the program. Also as indicated, the program code may be hard coded.
• the controller parameters relate to process conditions, such as, for example, process gas composition and flow rates, temperature, pressure, cooling gas pressure, substrate temperature, and chamber wall temperature. These parameters are provided to the user in the form of a recipe, and may be entered utilizing the user interface.
• Signals for monitoring the process may be provided by analog and/or digital input connections of the system controller 629.
• the signals for controlling the process are output on the analog and digital output connections of the deposition apparatus 600.
• the system software may be designed or configured in many different ways. For example, various chamber component subroutines or control obj ects may be written to control operation of the chamber components necessary to carry out the deposition processes in accordance with the disclosed embodiments. Examples of programs or sections of programs for this purpose include substrate positioning code, process gas control code, pressure control code, and heater control code.
• a controller 629 is part of a system, which may be part of the above-described examples.
• Such systems can include semiconductor processing equipment, including a processing tool or tools, chamber or chambers, a platform or platforms for processing, and/or specific processing components (a wafer pedestal, a gas flow system, etc.).
• These systems may be integrated with electronics for controlling their operation before, during, and after processing of a semiconductor wafer or substrate.
• the electronics may be referred to as the“controller,” which may control various components or subparts of the system or systems.
• the controller 629 may be programmed to control any of the processes disclosed herein, including the delivery of processing gases, temperature settings (e.g., heating and/or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings in some systems, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, positional and operation settings, wafer transfers into and out of a tool and other transfer tools and/or load locks connected to or interfaced with a specific system.
• temperature settings e.g., heating and/or cooling
• RF radio frequency
• the controller may be defined as electronics having various integrated circuits, logic, memory, and/or software that receive instructions, issue instructions, control operation, enable cleaning operations, enable endpoint measurements, and the like.
• the integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and/or one or more microprocessors, or microcontrollers that execute program instructions (e.g., software).
• Program instructions may be instructions communicated to the controller in the form of various individual settings (or program files), defining operational parameters for carrying out a particular process on or for a semiconductor wafer or to a system.
• the operational parameters may, in some embodiments, be part of a recipe defined by process engineers to accomplish one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and/or dies of a wafer.
• the controller 629 may be a part of or coupled to a computer that is integrated with, coupled to the system, otherwise networked to the system, or a combination thereof.
• the controller 629 may be in the“cloud” or all or a part of a fab host computer system, which can allow for remote access of the wafer processing.
• the computer may enable remote access to the system to monitor current progress of fabrication operations, examine a history of past fabrication operations, examine trends or performance metrics from a plurality of fabrication operations, to change parameters of current processing, to set processing steps to follow a current processing, or to start a new process.
• a remote computer e.g.
• a server can provide process recipes to a system over a network, which may include a local network or the Internet.
• the remote computer may include a user interface that enables entry or programming of parameters and/or settings, which are then communicated to the system from the remote computer.
• the controller receives instructions in the form of data, which specify parameters for each of the processing steps to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process to be performed and the type of tool that the controller is configured to interface with or control.
• the controller may be distributed, such as by including one or more discrete controllers that are networked together and working towards a common purpose, such as the processes and controls described herein.
• An example of a distributed controller for such purposes would be one or more integrated circuits on a chamber in communication with one or more integrated circuits located remotely (such as at the platform level or as part of a remote computer) that combine to control a process on the chamber.
• example systems may include a plasma etch chamber or module, a deposition chamber or module, a spin-rinse chamber or module, a metal plating chamber or module, a clean chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a CVD chamber or module, an ALD chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and any other semiconductor processing systems that may be associated or used in the fabrication and/or manufacturing of semiconductor wafers.
• PVD physical vapor deposition
• CVD chemical vapor deposition
• ALD atomic layer etch
• ALE atomic layer etch
• the controller might communicate with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout a factory, a main computer, another controller, or tools used in material transport that bring containers of wafers to and from tool locations and/or load ports in a semiconductor manufacturing factory.
• the controller 629 may include various programs.
• a substrate positioning program may include program code for controlling chamber components that are used to load the substrate onto a pedestal or chuck and to control the spacing between the substrate and other parts of the chamber such as a gas inlet and/or target.
• a process gas control program may include code for controlling gas composition, flow rates, pulse times, and optionally for flowing gas into the chamber prior to deposition in order to stabilize the pressure in the chamber.
• a pressure control program may include code for controlling the pressure in the chamber by regulating, e.g., a throttle valve in the exhaust system of the chamber.
• a heater control program may include code for controlling the current to a heating unit that is used to heat the substrate.
• the heater control program may control delivery of a heat transfer gas such as helium to the wafer chuck.
• a heat transfer gas such as helium
• Examples of chamber sensors that may be monitored during deposition include mass flow controllers, pressure sensors such as manometers, and thermocouples located in the pedestal or chuck. Appropriately programmed feedback and control algorithms may be used with data from these sensors to maintain desired process conditions.
• the apparatus may include a gas manifold system, which provides line charges to the various gas distribution lines as shown schematically in Figure 8.
• Manifold 804 has an input 802 from a source of a tungsten-containing or molybdenum-containing precursor gas (not shown)
• manifold 811 has an input 809 from a source of hydrogen or other reducing gas (not shown)
• manifold 821 has an input 819 from a source of inert purge gas (not shown).
• the manifolds 804, 811 and 821 provide the precursor gas, reducing gas and purge gas to the deposition chamber through valved distribution lines, 805, 813 and 825 respectively.
• valve 806 is closed to vacuum and valve 808 is closed. After a suitable increment of time, valve 808 is opened and the precursor gas is delivered to the chamber. After a suitable time for delivery of the gas, valve 808 is closed. The chamber can then be purged to a vacuum by opening of valve 806 to vacuum.
• Similar processes are used to deliver the reducing gas and the purge gas.
• distribution line 813 is charged by closing valve 815 and closing valve 817 to vacuum. Opening of valve 815 allows for delivery of the reducing gas to the chamber.
• distribution line 825 is charged by closing valve 827 and closing valve 823 to vacuum. Opening of valve 827 allows for delivery of the argon or other inert purge gas to the chamber. The amount of time allowed for line charges changes the amount and timing of the initial delivery of the gas.
• FIG. 6 also shows vacuum pumps in which valves 806, 817 and 823, respectively, can be opened to purge the system.
• the supply of gas through the various distribution lines is controlled by a controller, such as a mass flow controller which is controlled by a microprocessor, a digital signal processor or the like, that is programmed with the flow rates, duration of the flow, and the sequencing of the processes.
• valve and MFC commands are delivered to embedded digital input-output controllers (IOC) in discrete packets of information containing instructions for all time-critical commands for all or a part of a PNL deposition sequence.
• IOC embedded digital input-output controllers
• the ALTUS systems of Lam Research provide at least one IOC sequence.
• the IOCs can be physically located at various points in the apparatus; e.g., within the process module or on a stand-alone power rack standing some distance away from the process module. There are typically multiple IOCs in each module (e.g., 3 per module).
• all commands for controlling valves and setting flow for MFCs may be included in a single IOC sequence. This assures that the timing of all the devices is tightly controlled from an absolute standpoint and also relative to each other.
• IOC sequences running at any given time. This allows for, say, PNL to run at station 1-2 with all timing controlled for all the hardware components needed to deposit a PNL-W nucleation layer at those stations.
• a second sequence might be running concurrently to deposit a tungsten bulk using the timing sequence described above at other deposition stations in the same module.
• the relative timing of the devices controlling the delivery of reagents to stations 3-4 is important within that group of devices, but the relative timing of the PNL process at stations 1-2 can be offset from the relative timing of stations 3-4.
• An IOC translates the information in a packetized sequence and delivers digital or analog command signals directly to MFC or pneumatic solenoid banks controlling the valves.
• a pulse of tungsten- containing gas may be generated as follows. Initially, the system diverts WCl x to a vacuum pump for a period of time while the MFC or other flow- controlling device stabilizes. This may be done for a period of between about 0.5 to 5 seconds in one example. Next, the system pressurizes the tungsten gas delivery manifold by closing both the divert outlet 606 and the outlet 608 to the deposition chamber. This may be done for a period of between about 0.1 and 5 seconds, for example, to create an initial burst of reagent when the outlet to the deposition chamber is opened. This is accomplished by opening outlet valve 808 for between about 0.1 and 10 seconds in one example.
• the tungsten-containing gas is purged from the deposition chamber using a suitable purge gas.
• the pulsed flow of other reagents may be done in a similar manner.
• a pulse of molybdenum- containing gas may be generating in a similar fashion.
• Lithographic patterning of a film typically includes some or all of the following steps, each step provided with a number of possible tools: (1) application of photoresist on a workpiece, i.e., substrate, using a spin-on or spray-on tool; (2) curing of photoresist using a hot plate or furnace or UV curing tool; (3) exposing the photoresist to visible or UV or x-ray light with a tool such as a wafer stepper; (4) developing the resist so as to selectively remove resist and thereby pattern it using a tool such as a wet bench; (5) transferring the resist pattern into an underlying film or workpiece by using a dry or plasma-assisted etching tool; and (6) removing the resist using a tool such as an RF or microwave plasma resist stripper.
• a tool such as an RF or microwave plasma resist stripper.

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