JPS5629648A - High hardness sintered body - Google Patents
High hardness sintered bodyInfo
- Publication number
- JPS5629648A JPS5629648A JP10442779A JP10442779A JPS5629648A JP S5629648 A JPS5629648 A JP S5629648A JP 10442779 A JP10442779 A JP 10442779A JP 10442779 A JP10442779 A JP 10442779A JP S5629648 A JPS5629648 A JP S5629648A
- Authority
- JP
- Japan
- Prior art keywords
- binder
- cbn
- sintered body
- temperature
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To enhance properties such as high-temperature hardness, pressure strength, and toughness in the process of preparing a high-hardness sintered body essentially consisting of CBN or WBN by adding a hydride of a specific metal as a binder for intermetallic compounds.
CONSTITUTION: As a binder for hard particles of CBN or WBN, an intermetallic compound of Ni or Co with W, Mo, Nb, V, Ta, etc., is added to undergo pressurizing and forming, and is sintered at high-temperature and high-pressure. At this time, a single or combined hydrides of metals such as TiHX, ZnHX, and HfHX (1≤X≤2) are added as an auxiliary binder. The intermetallic compound is decomposed into hydrogen and metal in pretreatment at high temperature and high pressure where the generated hydrogen cleans the surface of CBN and binder, the metal acts as a strong auxiliary binder. The obtained high-hardness sintered body 1 is brazed to the notch 3 of a bit holder 2 either directly or via a base 4 of cemented carbide or high-speed steel, etc.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10442779A JPS5629648A (en) | 1979-08-16 | 1979-08-16 | High hardness sintered body |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10442779A JPS5629648A (en) | 1979-08-16 | 1979-08-16 | High hardness sintered body |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5629648A true JPS5629648A (en) | 1981-03-25 |
JPS6133894B2 JPS6133894B2 (en) | 1986-08-05 |
Family
ID=14380380
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10442779A Granted JPS5629648A (en) | 1979-08-16 | 1979-08-16 | High hardness sintered body |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5629648A (en) |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103579184A (en) * | 2012-07-26 | 2014-02-12 | 朗姆研究公司 | Ternary tungsten boride nitride films and methods for forming same |
US9583385B2 (en) | 2001-05-22 | 2017-02-28 | Novellus Systems, Inc. | Method for producing ultra-thin tungsten layers with improved step coverage |
US9589808B2 (en) | 2013-12-19 | 2017-03-07 | Lam Research Corporation | Method for depositing extremely low resistivity tungsten |
US9613818B2 (en) | 2015-05-27 | 2017-04-04 | Lam Research Corporation | Deposition of low fluorine tungsten by sequential CVD process |
US9653353B2 (en) | 2009-08-04 | 2017-05-16 | Novellus Systems, Inc. | Tungsten feature fill |
US9673146B2 (en) | 2009-04-16 | 2017-06-06 | Novellus Systems, Inc. | Low temperature tungsten film deposition for small critical dimension contacts and interconnects |
US9754824B2 (en) | 2015-05-27 | 2017-09-05 | Lam Research Corporation | Tungsten films having low fluorine content |
US9953984B2 (en) | 2015-02-11 | 2018-04-24 | Lam Research Corporation | Tungsten for wordline applications |
US9978605B2 (en) | 2015-05-27 | 2018-05-22 | Lam Research Corporation | Method of forming low resistivity fluorine free tungsten film without nucleation |
US10256142B2 (en) | 2009-08-04 | 2019-04-09 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
US10510590B2 (en) | 2017-04-10 | 2019-12-17 | Lam Research Corporation | Low resistivity films containing molybdenum |
US11348795B2 (en) | 2017-08-14 | 2022-05-31 | Lam Research Corporation | Metal fill process for three-dimensional vertical NAND wordline |
US11549175B2 (en) | 2018-05-03 | 2023-01-10 | Lam Research Corporation | Method of depositing tungsten and other metals in 3D NAND structures |
US11972952B2 (en) | 2018-12-14 | 2024-04-30 | Lam Research Corporation | Atomic layer deposition on 3D NAND structures |
US12002679B2 (en) | 2019-04-11 | 2024-06-04 | Lam Research Corporation | High step coverage tungsten deposition |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6090178A (en) * | 1998-04-22 | 2000-07-18 | Sinterfire, Inc. | Frangible metal bullets, ammunition and method of making such articles |
-
1979
- 1979-08-16 JP JP10442779A patent/JPS5629648A/en active Granted
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9583385B2 (en) | 2001-05-22 | 2017-02-28 | Novellus Systems, Inc. | Method for producing ultra-thin tungsten layers with improved step coverage |
US9673146B2 (en) | 2009-04-16 | 2017-06-06 | Novellus Systems, Inc. | Low temperature tungsten film deposition for small critical dimension contacts and interconnects |
US10103058B2 (en) | 2009-08-04 | 2018-10-16 | Novellus Systems, Inc. | Tungsten feature fill |
US9653353B2 (en) | 2009-08-04 | 2017-05-16 | Novellus Systems, Inc. | Tungsten feature fill |
US10256142B2 (en) | 2009-08-04 | 2019-04-09 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
CN103579184B (en) * | 2012-07-26 | 2017-04-12 | 朗姆研究公司 | Ternary tungsten boride nitride films and methods for forming same |
US9969622B2 (en) | 2012-07-26 | 2018-05-15 | Lam Research Corporation | Ternary tungsten boride nitride films and methods for forming same |
CN103579184A (en) * | 2012-07-26 | 2014-02-12 | 朗姆研究公司 | Ternary tungsten boride nitride films and methods for forming same |
US9589808B2 (en) | 2013-12-19 | 2017-03-07 | Lam Research Corporation | Method for depositing extremely low resistivity tungsten |
US10529722B2 (en) | 2015-02-11 | 2020-01-07 | Lam Research Corporation | Tungsten for wordline applications |
US9953984B2 (en) | 2015-02-11 | 2018-04-24 | Lam Research Corporation | Tungsten for wordline applications |
US9978605B2 (en) | 2015-05-27 | 2018-05-22 | Lam Research Corporation | Method of forming low resistivity fluorine free tungsten film without nucleation |
US9754824B2 (en) | 2015-05-27 | 2017-09-05 | Lam Research Corporation | Tungsten films having low fluorine content |
US9613818B2 (en) | 2015-05-27 | 2017-04-04 | Lam Research Corporation | Deposition of low fluorine tungsten by sequential CVD process |
US10546751B2 (en) | 2015-05-27 | 2020-01-28 | Lam Research Corporation | Forming low resistivity fluorine free tungsten film without nucleation |
US10510590B2 (en) | 2017-04-10 | 2019-12-17 | Lam Research Corporation | Low resistivity films containing molybdenum |
US11348795B2 (en) | 2017-08-14 | 2022-05-31 | Lam Research Corporation | Metal fill process for three-dimensional vertical NAND wordline |
US11549175B2 (en) | 2018-05-03 | 2023-01-10 | Lam Research Corporation | Method of depositing tungsten and other metals in 3D NAND structures |
US11972952B2 (en) | 2018-12-14 | 2024-04-30 | Lam Research Corporation | Atomic layer deposition on 3D NAND structures |
US12002679B2 (en) | 2019-04-11 | 2024-06-04 | Lam Research Corporation | High step coverage tungsten deposition |
Also Published As
Publication number | Publication date |
---|---|
JPS6133894B2 (en) | 1986-08-05 |
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