JP2023510607A - エッチングまたは堆積のための方法 - Google Patents
エッチングまたは堆積のための方法 Download PDFInfo
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- JP2023510607A JP2023510607A JP2022543417A JP2022543417A JP2023510607A JP 2023510607 A JP2023510607 A JP 2023510607A JP 2022543417 A JP2022543417 A JP 2022543417A JP 2022543417 A JP2022543417 A JP 2022543417A JP 2023510607 A JP2023510607 A JP 2023510607A
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- 238000000034 method Methods 0.000 title claims abstract description 113
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 29
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- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 15
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- 229910052681 coesite Inorganic materials 0.000 claims abstract description 14
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- 241000588731 Hafnia Species 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
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- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
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- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
Abstract
Description
(a)基板を制御可能にエッチングするための異種プロセス条件の第1のセットであって、基板は、Al2O3、TiN、HfO2、ZrO2、W、Mo、Co、Ru、およびSiN膜から選定される膜を含む、第1のセット、または、
(b)タングステンを基板の表面上へと制御可能に堆積させるための異種プロセス条件の第2のセットであって、基板は、Al2O3、HfO2、ZrO2、W、Mo、Co、Ru、SiN、TiN、およびSiO2膜から選定される膜を含む、第2のセット
のもとで、反応ゾーン内で、WOCl4および還元ガスに基板を暴露すること
を含む方法を提供する。
反応ゾーン内で、(i)前駆体アンプルから送り出されるキャリアガスと一緒のWOCl4、および、(ii)還元ガスに、Al2O3、TiN、HfO2、ZrO2、W、Mo、Co、Ru、およびSiN膜から選定される膜を含む基板を暴露することであって、反応ゾーン内の圧力は約0.5から500トールであり、基板温度は約200℃から1000℃であり、還元ガス流れ速度は約0.1から10リットル毎分であり、キャリアガス流れは約0.001から1リットル毎分であり、反応ゾーン内のWOCl4の濃度は1000ppmより大であり、前駆体アンプル温度は約10℃から約180℃であり、以て、Al2O3、TiN、HfO2、ZrO2、W、Mo、Co、Ru、およびSiN膜から選定される膜を含む基板がエッチングされる、基板を暴露すること
を含む方法を提供する。
反応ゾーン内で、(i)前駆体アンプルから送り出されるキャリアガスと一緒のWOCl4、および、(ii)還元ガスに、Al2O3、HfO2、ZrO2、W、Mo、Co、Ru、SiN、TiN、およびSiO2膜から選定される膜を含む基板を暴露することであって、反応ゾーン内の圧力は約0.5トールから500トールであり、基板温度は約200℃から1000℃であり、還元ガス流れ速度は約0.1から10リットル毎分であり、キャリアガス流れは約0.001から1リットル毎分であり、WOCl4の濃度は1000ppm未満であり、前駆体アンプル温度は約10℃から約180℃であり、以て、タングステンが、Al2O3、HfO2、ZrO2、W、Mo、Co、Ru、SiN、TiN、およびSiO2膜から選定される膜を含む基板の表面上へと堆積される、基板を暴露すること
を含む方法を提供する。
反応ゾーン内で、(i)前駆体アンプルから送り出されるキャリアガスと一緒のWOCl4、および、(ii)共反応物還元ガスに、Al2O3、HfO2、ZrO2、W、Mo、Co、Ru、Cu、Ir、SiN、TiN、およびSiO2膜から選択される膜を含む基板を暴露することであって、反応ゾーン内の圧力は約0.5トールから500トールであり、基板温度は約200℃から1000℃であり、還元ガス流れ速度は約0.1から10リットル毎分であり、キャリアガス流れは約0.001から1リットル毎分であり、WOCl4の濃度は、より少ない1000ppmであり、前駆体アンプル温度は約10℃から約180℃であり、以て、タングステンが、W、Mo、Co、Ru、Cu、Ir、および、他の適した金属導体膜などの金属導体膜上へと選択的に堆積されるが、窒化物および/または誘電体酸化物膜上へは堆積されない、基板を暴露すること
を含む方法を提供する。
(a)Al2O3もしくはTiNを含む基板膜を制御可能にエッチングするためのプロセス条件の第1のセット、または、
(b)タングステンを基板の表面上へと制御可能に堆積させるためのプロセス条件の第2のセットであって、基板は、Al2O3、HfO2、ZrO2、W、Mo、Co、Ru、SiN、TiN、およびSiO2膜から選定される、第2のセット
のもとで、反応ゾーン内で、WOCl4および還元ガスに基板を暴露すること
を含む方法を提供する。
・圧力 => 0.5トールから500トール、
・温度 => 200℃から1000℃、
・H2流れ速度 => 0.1から10リットル毎分、
・キャリアガス流れ => 0.001から1リットル毎分、および、
・前駆体アンプル温度 => 10℃から180℃。
・圧力 => 0.5トールから500トール、
・温度 => 200℃から1000℃、
・H2流れ速度 => 0.1から10リットル毎分、
・キャリアガス流れ => 0.001から1リットル毎分、および、
・前駆体アンプル温度 => 10℃から180℃。
・反応ゾーン内の圧力は約0.5トールから500トールである、
・基板温度は約200℃から1000℃である、
・還元ガス流れ速度は約0.1から10リットル毎分である、
・キャリアガス流れは約0.001から1リットル毎分である、
・[WOCl4]の濃度は、より少ない1000ppmである、および、
・前駆体アンプル温度は約10℃から約180℃である、
のもとで行う、基板を暴露することにより、金属導体膜上へと選択的に堆積される。
(a)基板を制御可能にエッチングするためのプロセス条件の第1のセットであって、基板は、Al2O3、TiN、HfO2、ZrO2、W、Mo、Co、Ru、Ir、Cu、SiO2、およびSiN膜から選定される膜を含む、第1のセット、
(b)タングステンを基板の表面上へと制御可能に堆積させるためのプロセス条件の第2のセットであって、基板は、Al2O3、HfO2、ZrO2、W、Mo、Co、Ru、Ir、Cu、SiN、TiN、およびSiO2膜から選定される膜を含む、第2のセット、または、
(c)タングステンを、金属導電W、Mo、Co、Ru、Ir、Cu、基板上へと選択的に堆積させるが、近隣の窒化物もしくは誘電体酸化物膜上へは堆積させないためのプロセス条件の第3のセット
のもとで、反応ゾーン内で、WOCl4および還元ガスに基板を暴露することを含む方法である。
(i)WOCl4前駆体に暴露され、後に続くのが、
(ii)吸引または不活性ガスによりパージすることであり、後に続くのが、
(iii)還元ガスへの暴露であり、後に続くのが、
(iv)吸引または不活性ガスによりパージすること、および、基板上での所望の量のエッチングが起こるまで、(i)ないし(iv)のシーケンスを繰り返すことである、態様6の方法である。
反応ゾーン内で、
(i)前駆体アンプルから送り出されるキャリアガスと一緒のWOCl4、および、
(ii)還元ガス
に、Al2O3、HfO2、ZrO2、W、Mo、Co、Ru、SiN、TiN、およびSiO2膜から選定される膜を含む基板を暴露することであって、
反応ゾーン内の圧力は約0.5トールから500トールであり、基板温度は約200℃から1000℃であり、還元ガス流れ速度は約0.1から10リットル毎分であり、キャリアガス流れは約0.001から1リットル毎分であり、WOCl4の濃度は1000ppm未満であり、前駆体アンプル温度は約10℃から約180℃であり、
以て、タングステンが、Al2O3、HfO2、ZrO2、W、Mo、Co、Ru、SiN、TiN、およびSiO2膜から選定される膜を含む基板の表面上へと堆積される、基板を暴露することを含む方法である。
(i)WOCl4前駆体に暴露され、後に続くのが、
(ii)吸引または不活性ガスによりパージすることであり、後に続くのが、
(iii)還元ガスへの暴露であり、後に続くのが、
(iv)吸引または不活性ガスによりパージすること、および、基板上でのタングステンの所望の量の堆積が起こるまで、(i)ないし(iv)のシーケンスを繰り返すことである、態様16の方法である。
タングステンは、W、Mo、Co、Ru、Cu、Ir、および、他の適した金属導体膜などの金属導体膜上へと選択的に堆積されるが、窒化物および/または誘電体酸化物膜上へは堆積されない、方法である。
Claims (20)
- (a)基板を制御可能にエッチングするためのプロセス条件の第1のセットであって、前記基板は、Al2O3、TiN、HfO2、ZrO2、W、Mo、Co、Ru、Ir、Cu、SiO2、およびSiN膜から選定される膜を含む、第1のセット、
(b)タングステンを基板の表面上へと制御可能に堆積させるためのプロセス条件の第2のセットであって、前記基板は、Al2O3、HfO2、ZrO2、W、Mo、Co、Ru、Ir、Cu、SiN、TiN、およびSiO2膜から選定される膜を含む、第2のセット、または、
(c)タングステンを、金属導電W、Mo、Co、Ru、Ir、Cu、基板上へと選択的に堆積させるが、近隣の窒化物もしくは誘電体酸化物膜上へは堆積させないためのプロセス条件の第3のセット
のもとで、反応ゾーン内で、WOCl4および還元ガスに基板を暴露することを含む方法。 - プロセス条件の前記第1のセットが、約200℃から約1000℃の基板温度範囲、約800ppmから約20,000ppmのWOCl4濃度、および、約0.5から約500トールの圧力を含む、請求項1に記載の方法。
- プロセス条件の前記第2のセットが、約200℃から約1000℃の基板温度範囲、約5ppmから約1200ppmのWOCl4濃度、および、約0.5から約500トールの圧力を含む、請求項1に記載の方法。
- プロセス条件の前記第3のセットが、約200℃から約1000℃の基板温度範囲、約5ppmから約1200ppmのWOCl4濃度、約0.5から約500トールの圧力、および、多数の基板を含み、以て、タングステン金属は、導電金属膜上でのみ堆積されるが、近隣の窒化物または誘電体酸化物膜上へは堆積されない、請求項1に記載の方法。
- 前記還元ガスが、水素、ヒドラジン、またはアルキル化ヒドラジンから選定される、請求項1に記載の方法。
- 前記還元ガスが水素であり、前記水素が、約0.1から約10リットル毎分の速度において前記反応ゾーン内へと送り込まれる、請求項2に記載の方法。
- 反応ゾーン内で、(i)前駆体アンプルから送り出されるキャリアガスと一緒のWOCl4、および、(ii)還元ガスに、Al2O3、TiN、HfO2、ZrO2、W、Mo、Co、Cu、Ru、Ir、SiO2、およびSiN膜から選定される膜を含む基板を暴露することであって、前記反応ゾーン内の圧力は約0.5から500トールであり、基板温度は約200℃から1000℃であり、還元ガス流れ速度は約0.1から10リットル毎分であり、キャリアガス流れは約0.001から1リットル毎分であり、前記反応ゾーン内のWOCl4の濃度は1000ppmより大きく、前駆体アンプル温度は約10℃から約180℃であり、以て、Al2O3、TiN、HfO2、ZrO2、W、Mo、Co、Cu、Ru、Ir、SiO2、およびSiN膜から選定される膜を含む前記基板がエッチングされる、基板を暴露することを含む方法。
- 前記反応ゾーン内のWOCl4の前記濃度が約1000ppmから約10,000ppmである、請求項7に記載の方法。
- 前記基板が、順次、
(i)WOCl4前駆体に暴露され、後に続くのが、
(ii)吸引または不活性ガスによりパージすることであり、後に続くのが、
(iii)還元ガスへの暴露であり、後に続くのが、
(iv)吸引または不活性ガスによりパージすること、および、前記基板上での所望の量のエッチングが起こるまで、(i)ないし(iv)のシーケンスを繰り返すことである、請求項7に記載の方法。 - 前記基板が、WOCl4前駆体および還元ガスの継続的な流れに暴露される、請求項7に記載の方法。
- 前記基板が、還元ガスの継続的な流れに暴露され、一方で、WOCl4前駆体が、あらかじめ決定された期間の時間の間、前記反応ゾーン内へとパルス送出される、請求項7に記載の方法。
- 前記反応ゾーン内のWOCl4前駆体の前記濃度が約2000ppmから約5000ppmである、請求項7に記載の方法。
- 前記基板温度が約300℃から約450℃である、請求項7に記載の方法。
- 反応ゾーン内で、
(i)前駆体アンプルから送り出されるキャリアガスと一緒のWOCl4、および、
(ii)還元ガス
に、Al2O3、HfO2、ZrO2、W、Mo、Co、Cu、Ru、Ir、SiN、TiN、およびSiO2膜から選定される膜を含む基板を暴露することであって、
前記反応ゾーン内の圧力は約0.5トールから500トールであり、基板温度は約200℃から1000℃であり、還元ガス流れ速度は約0.1から10リットル毎分であり、キャリアガス流れは約0.001から1リットル毎分であり、WOCl4の濃度は1000ppm未満であり、前駆体アンプル温度は約10℃から約180℃であり、
以て、タングステンが、Al2O3、HfO2、ZrO2、W、Mo、Co、Cu、Ru、Ir、SiN、TiN、およびSiO2膜から選定される膜を含む前記基板の表面上へと堆積される、基板を暴露することを含む方法。 - 前記反応ゾーン内のWOCl4の前記濃度が約75ppmから約1000ppmである、請求項14に記載の方法。
- 前記WOCl4前駆体が、所望の量の堆積が前記基板上で起こるまで、0.05から約120秒のオフ期間が後に続く、および、所望の数のパルスに対して繰り返される、0.05から約20秒の期間の間、前記反応ゾーン内へとパルス送出される、請求項14に記載の方法。
- 前記WOCl4前駆体が、1から約60秒のオフ期間が後に続く、0.1から約10秒の期間の間、前記反応ゾーン内へとパルス送出される、請求項16に記載の方法。
- 前記基板が、順次、
(i)WOCl4前駆体に暴露され、後に続くのが、
(ii)吸引または不活性ガスによりパージすることであり、後に続くのが、
(iii)還元ガスへの暴露であり、後に続くのが、
(iv)吸引または不活性ガスによりパージすること、および、前記基板上でのタングステンの所望の量の堆積が起こるまで、(i)ないし(iv)のシーケンスを繰り返すことである、請求項14に記載の方法。 - 前記暴露は、前記基板が、WOCl4前駆体および還元ガスの継続的な流れに暴露される場合のものである、請求項14に記載の方法。
- 約10Åから約50Åの厚さを有する、および、約100から約50μΩ-cmの抵抗率を有するタングステン膜。
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