JP2007051327A - 成膜方法 - Google Patents
成膜方法 Download PDFInfo
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- JP2007051327A JP2007051327A JP2005237065A JP2005237065A JP2007051327A JP 2007051327 A JP2007051327 A JP 2007051327A JP 2005237065 A JP2005237065 A JP 2005237065A JP 2005237065 A JP2005237065 A JP 2005237065A JP 2007051327 A JP2007051327 A JP 2007051327A
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- 238000000151 deposition Methods 0.000 title abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 129
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 100
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 57
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 57
- 239000001301 oxygen Substances 0.000 claims abstract description 57
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 50
- 150000004767 nitrides Chemical class 0.000 claims abstract description 46
- 238000000034 method Methods 0.000 claims abstract description 42
- 239000007800 oxidant agent Substances 0.000 claims abstract description 16
- 239000003575 carbonaceous material Substances 0.000 claims abstract description 15
- 239000000126 substance Substances 0.000 claims abstract description 12
- 238000005121 nitriding Methods 0.000 claims abstract description 10
- 238000009832 plasma treatment Methods 0.000 claims abstract description 9
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 8
- 238000001179 sorption measurement Methods 0.000 claims description 30
- 150000002902 organometallic compounds Chemical class 0.000 claims description 19
- 239000012298 atmosphere Substances 0.000 claims description 18
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 14
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 11
- 239000000243 solution Substances 0.000 claims description 10
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 9
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 229960001730 nitrous oxide Drugs 0.000 claims description 7
- 235000013842 nitrous oxide Nutrition 0.000 claims description 7
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 3
- 239000011259 mixed solution Substances 0.000 claims description 3
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 2
- 229910000423 chromium oxide Inorganic materials 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 143
- 229910003460 diamond Inorganic materials 0.000 abstract description 81
- 239000010432 diamond Substances 0.000 abstract description 81
- 239000010409 thin film Substances 0.000 abstract description 28
- 239000013078 crystal Substances 0.000 abstract description 15
- 239000000463 material Substances 0.000 abstract description 12
- 238000000231 atomic layer deposition Methods 0.000 abstract description 7
- 239000002194 amorphous carbon material Substances 0.000 abstract description 4
- 239000002180 crystalline carbon material Substances 0.000 abstract description 4
- 150000002736 metal compounds Chemical class 0.000 abstract description 2
- 238000006243 chemical reaction Methods 0.000 description 25
- 125000004429 atom Chemical group 0.000 description 22
- 239000010410 layer Substances 0.000 description 18
- 125000004430 oxygen atom Chemical group O* 0.000 description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 14
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 10
- 125000004433 nitrogen atom Chemical group N* 0.000 description 9
- 239000002994 raw material Substances 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 229910052799 carbon Inorganic materials 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 239000011261 inert gas Substances 0.000 description 7
- 230000001590 oxidative effect Effects 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 125000004432 carbon atom Chemical group C* 0.000 description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 6
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical class [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 229910052735 hafnium Inorganic materials 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000006467 substitution reaction Methods 0.000 description 5
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 4
- -1 aluminum alkoxide Chemical class 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 150000001721 carbon Chemical group 0.000 description 3
- 229910002091 carbon monoxide Inorganic materials 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- 239000002041 carbon nanotube Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 229910003472 fullerene Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- WZVIPWQGBBCHJP-UHFFFAOYSA-N hafnium(4+);2-methylpropan-2-olate Chemical compound [Hf+4].CC(C)(C)[O-].CC(C)(C)[O-].CC(C)(C)[O-].CC(C)(C)[O-] WZVIPWQGBBCHJP-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910007926 ZrCl Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002090 carbon oxide Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- ZVODSTJKZOOBPY-UHFFFAOYSA-N chromium(3+) oxygen(2-) sulfuric acid Chemical compound S(O)(O)(=O)=O.[O-2].[Cr+3].[O-2].[O-2].[Cr+3] ZVODSTJKZOOBPY-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000000572 ellipsometry Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002116 nanohorn Substances 0.000 description 1
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
- DUNKXUFBGCUVQW-UHFFFAOYSA-J zirconium tetrachloride Chemical compound Cl[Zr](Cl)(Cl)Cl DUNKXUFBGCUVQW-UHFFFAOYSA-J 0.000 description 1
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- Insulated Gate Type Field-Effect Transistor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Abstract
【解決手段】 単結晶ダイヤモンド基材上にダイヤモンド薄膜が形成されたダイヤモンド基板等の炭素材料からなる基板の表面に、プラズマ処理、ラジカル処理、薬液処理又はこれらを組み合わせた処理を施すことにより、酸素及び/又は窒素を吸着させる。その後、この酸素及び/又は窒素を吸着させたダイヤモンド基板の表面上に、有機金属化合物と酸化剤又は窒素剤とを交互に供給する原子層堆積法により、酸化膜又は窒素膜を成膜する。
【選択図】 図1
Description
2;ダイヤモンド薄膜
3;ダイヤモンド基板
4;絶縁膜
11;反応容器内整流用配管
12;置換兼キャリア用配管
13;有機金属化合物供給源
14;酸化剤・窒化剤供給源
15;反応容器
16;整流板
17;回転部
18;ヒータ
19;サセプタ
20;基板
21;圧力調整弁
22;ポンプ
Claims (7)
- 炭素材料からなる基板の表面に酸素及び/又は窒素を化学吸着させる工程と、前記基板の酸素及び/又は窒素が吸着された表面上に、有機金属化合物とこの有機金属化合物と反応して金属酸化物を生成する酸化剤とを交互に供給して、前記基板の表面上に金属酸化物からなる酸化膜を積層する工程と、を有することを特徴とする成膜方法。
- 炭素材料からなる基板の表面に酸素及び/又は窒素を化学吸着させる工程と、前記基板の酸素及び/又は窒素が吸着された表面上に、有機金属化合物とこの有機金属化合物と反応して金属窒化物を生成する窒化剤とを交互に供給して、前記基板の表面上に金属窒化物からなる窒化膜を積層する工程と、を有することを特徴とする成膜方法。
- 前記基板の酸素及び/又は窒素が吸着された表面における前記酸素及び窒素の吸着原子密度比(吸着原子密度/表面結合手密度)が60%以上であることを特徴とする請求項1又は2に記載の成膜方法。
- 前記基板の表面に対して、プラズマ処理、ラジカル処理及び薬液処理のうち、少なくとも1種の処理を施すことにより、前記基板の表面に酸素及び/又は窒素を化学吸着させることを特徴とする請求項1乃至3のいずれか1項に記載の成膜方法。
- 前記プラズマ処理は、酸素雰囲気中、窒素雰囲気中又は一酸化二窒素雰囲気中で、基板温度を50乃至350℃としてプラズマを発生させ、このプラズマに前記基板の表面を5乃至30分間暴露することを特徴とする請求項4に記載の成膜方法。
- 前記ラジカル処理は、基板温度を200乃至500℃として、酸素雰囲気中、窒素雰囲気中、一酸化二窒素雰囲気中、オゾン雰囲気中又は水蒸気中で、これらのラジカルに前記基板の表面を10乃至60分間暴露することを特徴とする請求項4に記載の成膜方法。
- 前記薬液処理は、100乃至250℃の酸化クロムの硫酸溶液、硫酸と過酸化水素との混合溶液又はオゾン水に、前記基板の表面を20乃至90分間浸漬することを特徴とする請求項4に記載の成膜方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2005237065A JP4425194B2 (ja) | 2005-08-18 | 2005-08-18 | 成膜方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2005237065A JP4425194B2 (ja) | 2005-08-18 | 2005-08-18 | 成膜方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2007051327A true JP2007051327A (ja) | 2007-03-01 |
JP2007051327A5 JP2007051327A5 (ja) | 2007-12-20 |
JP4425194B2 JP4425194B2 (ja) | 2010-03-03 |
Family
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JP2005237065A Expired - Fee Related JP4425194B2 (ja) | 2005-08-18 | 2005-08-18 | 成膜方法 |
Country Status (1)
Country | Link |
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JP (1) | JP4425194B2 (ja) |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009158612A (ja) * | 2007-12-25 | 2009-07-16 | Nippon Telegr & Teleph Corp <Ntt> | ダイヤモンド電界効果トランジスタ |
JP2010062457A (ja) * | 2008-09-05 | 2010-03-18 | Nippon Telegr & Teleph Corp <Ntt> | ダイヤモンド電界効果トランジスタ及びその作製方法 |
WO2011114734A1 (ja) * | 2010-03-18 | 2011-09-22 | 三井造船株式会社 | 薄膜形成装置 |
WO2015023356A1 (en) * | 2013-08-12 | 2015-02-19 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Thin diamond film bonding providing low vapor pressure at high temperature |
JP2015508569A (ja) * | 2011-12-20 | 2015-03-19 | セントレ・ナショナル・デ・ラ・レシェルシェ・サイエンティフィーク | ダイヤモンドの基板にmos積層体を製造する方法 |
JP2015187071A (ja) * | 2014-03-26 | 2015-10-29 | ツィンファ ユニバーシティ | ナノチューブフィルム及びその製造方法 |
JP2018006572A (ja) * | 2016-07-01 | 2018-01-11 | 国立研究開発法人産業技術総合研究所 | ダイヤモンド半導体装置及びその製造方法 |
JP2018529610A (ja) * | 2015-07-31 | 2018-10-11 | クラヨナノ エーエス | グラファイト基板上でのナノワイヤ又はナノピラミッドの成長方法 |
US11239391B2 (en) | 2017-04-10 | 2022-02-01 | Norwegian University Of Science And Technology (Ntnu) | Nanostructure |
US11257967B2 (en) | 2012-06-21 | 2022-02-22 | Norwegian University Of Science And Technology (Ntnu) | Solar cells |
US11264536B2 (en) | 2015-07-13 | 2022-03-01 | Crayonano As | Nanowires or nanopyramids grown on a graphene substrate |
WO2022145291A1 (ja) * | 2020-12-28 | 2022-07-07 | 国立大学法人佐賀大学 | 多層膜構造体、多層膜構造体の製造方法、および電子素子 |
US11594657B2 (en) | 2015-07-13 | 2023-02-28 | Crayonano As | Nanowires/nanopyramids shaped light emitting diodes and photodetectors |
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2005
- 2005-08-18 JP JP2005237065A patent/JP4425194B2/ja not_active Expired - Fee Related
Cited By (18)
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JP2009158612A (ja) * | 2007-12-25 | 2009-07-16 | Nippon Telegr & Teleph Corp <Ntt> | ダイヤモンド電界効果トランジスタ |
JP2010062457A (ja) * | 2008-09-05 | 2010-03-18 | Nippon Telegr & Teleph Corp <Ntt> | ダイヤモンド電界効果トランジスタ及びその作製方法 |
WO2011114734A1 (ja) * | 2010-03-18 | 2011-09-22 | 三井造船株式会社 | 薄膜形成装置 |
JP2011198897A (ja) * | 2010-03-18 | 2011-10-06 | Mitsui Eng & Shipbuild Co Ltd | 薄膜形成装置 |
EP2795668B1 (fr) * | 2011-12-20 | 2017-11-15 | Centre National de la Recherche Scientifique (CNRS) | Procede de fabrication d'un empilement mos sur un substrat en diamant |
JP2015508569A (ja) * | 2011-12-20 | 2015-03-19 | セントレ・ナショナル・デ・ラ・レシェルシェ・サイエンティフィーク | ダイヤモンドの基板にmos積層体を製造する方法 |
US11257967B2 (en) | 2012-06-21 | 2022-02-22 | Norwegian University Of Science And Technology (Ntnu) | Solar cells |
WO2015023356A1 (en) * | 2013-08-12 | 2015-02-19 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Thin diamond film bonding providing low vapor pressure at high temperature |
US9238349B2 (en) | 2013-08-12 | 2016-01-19 | The United States Of America, As Represented By The Secretary Of The Navy | Thin diamond film bonding providing low vapor pressure at high temperature |
JP2015187071A (ja) * | 2014-03-26 | 2015-10-29 | ツィンファ ユニバーシティ | ナノチューブフィルム及びその製造方法 |
US11264536B2 (en) | 2015-07-13 | 2022-03-01 | Crayonano As | Nanowires or nanopyramids grown on a graphene substrate |
US11594657B2 (en) | 2015-07-13 | 2023-02-28 | Crayonano As | Nanowires/nanopyramids shaped light emitting diodes and photodetectors |
JP2018529610A (ja) * | 2015-07-31 | 2018-10-11 | クラヨナノ エーエス | グラファイト基板上でのナノワイヤ又はナノピラミッドの成長方法 |
JP7009358B2 (ja) | 2015-07-31 | 2022-01-25 | クラヨナノ エーエス | グラファイト基板上でのナノワイヤ又はナノピラミッドの成長方法 |
US11450528B2 (en) | 2015-07-31 | 2022-09-20 | Crayonano As | Process for growing nanowires or nanopyramids on graphitic substrates |
JP2018006572A (ja) * | 2016-07-01 | 2018-01-11 | 国立研究開発法人産業技術総合研究所 | ダイヤモンド半導体装置及びその製造方法 |
US11239391B2 (en) | 2017-04-10 | 2022-02-01 | Norwegian University Of Science And Technology (Ntnu) | Nanostructure |
WO2022145291A1 (ja) * | 2020-12-28 | 2022-07-07 | 国立大学法人佐賀大学 | 多層膜構造体、多層膜構造体の製造方法、および電子素子 |
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