JP2020535633A - 犠牲エッチングキャップ層を利用した高アスペクト比フィーチャの誘電体ギャップ充填 - Google Patents
犠牲エッチングキャップ層を利用した高アスペクト比フィーチャの誘電体ギャップ充填 Download PDFInfo
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- JP2020535633A JP2020535633A JP2020514992A JP2020514992A JP2020535633A JP 2020535633 A JP2020535633 A JP 2020535633A JP 2020514992 A JP2020514992 A JP 2020514992A JP 2020514992 A JP2020514992 A JP 2020514992A JP 2020535633 A JP2020535633 A JP 2020535633A
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- 238000005530 etching Methods 0.000 title claims description 156
- 238000011049 filling Methods 0.000 title claims description 53
- 238000000034 method Methods 0.000 claims abstract description 266
- 239000000758 substrate Substances 0.000 claims abstract description 213
- 239000000463 material Substances 0.000 claims abstract description 209
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 179
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 177
- 238000000151 deposition Methods 0.000 claims abstract description 108
- 238000012876 topography Methods 0.000 claims abstract description 49
- 230000008569 process Effects 0.000 claims description 172
- 239000007789 gas Substances 0.000 claims description 125
- 239000002243 precursor Substances 0.000 claims description 105
- 238000000231 atomic layer deposition Methods 0.000 claims description 92
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 85
- 229910052710 silicon Inorganic materials 0.000 claims description 85
- 239000010703 silicon Substances 0.000 claims description 84
- 239000007800 oxidant agent Substances 0.000 claims description 64
- 230000008021 deposition Effects 0.000 claims description 62
- 230000001590 oxidative effect Effects 0.000 claims description 56
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 46
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 46
- 239000004065 semiconductor Substances 0.000 claims description 45
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 39
- 238000012545 processing Methods 0.000 claims description 38
- 239000000376 reactant Substances 0.000 claims description 36
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 31
- 239000003795 chemical substances by application Substances 0.000 claims description 29
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 claims description 11
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims description 10
- 230000008878 coupling Effects 0.000 claims description 8
- 238000010168 coupling process Methods 0.000 claims description 8
- 238000005859 coupling reaction Methods 0.000 claims description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 8
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 8
- 239000010937 tungsten Substances 0.000 claims description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 7
- 229910017052 cobalt Inorganic materials 0.000 claims description 7
- 239000010941 cobalt Substances 0.000 claims description 7
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 239000011733 molybdenum Substances 0.000 claims description 7
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 229910052707 ruthenium Inorganic materials 0.000 claims description 6
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 5
- 239000004341 Octafluorocyclobutane Substances 0.000 claims description 4
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 claims description 4
- 235000019407 octafluorocyclobutane Nutrition 0.000 claims description 4
- 238000010586 diagram Methods 0.000 abstract description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 42
- 238000010926 purge Methods 0.000 description 41
- 239000003989 dielectric material Substances 0.000 description 34
- 235000012431 wafers Nutrition 0.000 description 30
- 229910052786 argon Inorganic materials 0.000 description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 19
- 239000007788 liquid Substances 0.000 description 16
- 239000012159 carrier gas Substances 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 13
- 238000005229 chemical vapour deposition Methods 0.000 description 12
- 239000000203 mixture Substances 0.000 description 11
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 10
- 238000002156 mixing Methods 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 10
- 230000008016 vaporization Effects 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 239000011261 inert gas Substances 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 238000009834 vaporization Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 8
- 238000002474 experimental method Methods 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 5
- 239000001272 nitrous oxide Substances 0.000 description 5
- 229910000077 silane Inorganic materials 0.000 description 5
- BMYNFMYTOJXKLE-UHFFFAOYSA-N 3-azaniumyl-2-hydroxypropanoate Chemical compound NCC(O)C(O)=O BMYNFMYTOJXKLE-UHFFFAOYSA-N 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 4
- YUCFVHQCAFKDQG-UHFFFAOYSA-N fluoromethane Chemical compound F[CH] YUCFVHQCAFKDQG-UHFFFAOYSA-N 0.000 description 4
- 238000009499 grossing Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- 238000011065 in-situ storage Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000011800 void material Substances 0.000 description 4
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 230000003252 repetitive effect Effects 0.000 description 3
- 239000012686 silicon precursor Substances 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- -1 texylsilane Chemical compound 0.000 description 3
- 238000011144 upstream manufacturing Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 239000005046 Chlorosilane Substances 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000001723 curing Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical group 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000678 plasma activation Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 2
- BEEYLGLWYXWFAG-UHFFFAOYSA-N 2-aminosilyl-2-methylpropane Chemical compound CC(C)(C)[SiH2]N BEEYLGLWYXWFAG-UHFFFAOYSA-N 0.000 description 1
- MAYUMUDTQDNZBD-UHFFFAOYSA-N 2-chloroethylsilane Chemical compound [SiH3]CCCl MAYUMUDTQDNZBD-UHFFFAOYSA-N 0.000 description 1
- VUGMARFZKDASCX-UHFFFAOYSA-N 2-methyl-N-silylpropan-2-amine Chemical compound CC(C)(C)N[SiH3] VUGMARFZKDASCX-UHFFFAOYSA-N 0.000 description 1
- MNTMWHBQGOKGDD-UHFFFAOYSA-N 3-methylbutylsilane Chemical compound CC(C)CC[SiH3] MNTMWHBQGOKGDD-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 238000001994 activation Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- VQPFDLRNOCQMSN-UHFFFAOYSA-N bromosilane Chemical compound Br[SiH3] VQPFDLRNOCQMSN-UHFFFAOYSA-N 0.000 description 1
- AUOLYXZHVVMFPD-UHFFFAOYSA-N butan-2-yl(chloro)silane Chemical compound CCC(C)[SiH2]Cl AUOLYXZHVVMFPD-UHFFFAOYSA-N 0.000 description 1
- VBLDUBUUQYXSCG-UHFFFAOYSA-N butan-2-ylsilane Chemical compound CCC(C)[SiH3] VBLDUBUUQYXSCG-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- YGHUUVGIRWMJGE-UHFFFAOYSA-N chlorodimethylsilane Chemical compound C[SiH](C)Cl YGHUUVGIRWMJGE-UHFFFAOYSA-N 0.000 description 1
- AZFVLHQDIIJLJG-UHFFFAOYSA-N chloromethylsilane Chemical compound [SiH3]CCl AZFVLHQDIIJLJG-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- UWGIJJRGSGDBFJ-UHFFFAOYSA-N dichloromethylsilane Chemical compound [SiH3]C(Cl)Cl UWGIJJRGSGDBFJ-UHFFFAOYSA-N 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- UCXUKTLCVSGCNR-UHFFFAOYSA-N diethylsilane Chemical compound CC[SiH2]CC UCXUKTLCVSGCNR-UHFFFAOYSA-N 0.000 description 1
- UBHZUDXTHNMNLD-UHFFFAOYSA-N dimethylsilane Chemical compound C[SiH2]C UBHZUDXTHNMNLD-UHFFFAOYSA-N 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- OGWXFZNXPZTBST-UHFFFAOYSA-N ditert-butyl(chloro)silane Chemical compound CC(C)(C)[SiH](Cl)C(C)(C)C OGWXFZNXPZTBST-UHFFFAOYSA-N 0.000 description 1
- LFLMSLJSSVNEJH-UHFFFAOYSA-N ditert-butyl(silyl)silane Chemical compound CC(C)(C)[SiH]([SiH3])C(C)(C)C LFLMSLJSSVNEJH-UHFFFAOYSA-N 0.000 description 1
- JTGAUXSVQKWNHO-UHFFFAOYSA-N ditert-butylsilicon Chemical compound CC(C)(C)[Si]C(C)(C)C JTGAUXSVQKWNHO-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- KCWYOFZQRFCIIE-UHFFFAOYSA-N ethylsilane Chemical compound CC[SiH3] KCWYOFZQRFCIIE-UHFFFAOYSA-N 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- XPBBUZJBQWWFFJ-UHFFFAOYSA-N fluorosilane Chemical compound [SiH3]F XPBBUZJBQWWFFJ-UHFFFAOYSA-N 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- IDIOJRGTRFRIJL-UHFFFAOYSA-N iodosilane Chemical compound I[SiH3] IDIOJRGTRFRIJL-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000012705 liquid precursor Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000001404 mediated effect Effects 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- IFVRUKGTKXWWQF-UHFFFAOYSA-N methylaminosilicon Chemical compound CN[Si] IFVRUKGTKXWWQF-UHFFFAOYSA-N 0.000 description 1
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- VYIRVGYSUZPNLF-UHFFFAOYSA-N n-(tert-butylamino)silyl-2-methylpropan-2-amine Chemical compound CC(C)(C)N[SiH2]NC(C)(C)C VYIRVGYSUZPNLF-UHFFFAOYSA-N 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 150000001282 organosilanes Chemical class 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000548 poly(silane) polymer Polymers 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- DNAJDTIOMGISDS-UHFFFAOYSA-N prop-2-enylsilane Chemical compound [SiH3]CC=C DNAJDTIOMGISDS-UHFFFAOYSA-N 0.000 description 1
- YYVGYULIMDRZMJ-UHFFFAOYSA-N propan-2-ylsilane Chemical compound CC(C)[SiH3] YYVGYULIMDRZMJ-UHFFFAOYSA-N 0.000 description 1
- 150000003254 radicals Chemical group 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- UTYRQCFTOYUATF-UHFFFAOYSA-N tert-butyl(chloro)silane Chemical compound CC(C)(C)[SiH2]Cl UTYRQCFTOYUATF-UHFFFAOYSA-N 0.000 description 1
- IPGXXWZOPBFRIZ-UHFFFAOYSA-N tert-butyl(silyl)silane Chemical compound CC(C)(C)[SiH2][SiH3] IPGXXWZOPBFRIZ-UHFFFAOYSA-N 0.000 description 1
- BCNZYOJHNLTNEZ-UHFFFAOYSA-N tert-butyldimethylsilyl chloride Chemical compound CC(C)(C)[Si](C)(C)Cl BCNZYOJHNLTNEZ-UHFFFAOYSA-N 0.000 description 1
- KNSVRQSOPKYFJN-UHFFFAOYSA-N tert-butylsilicon Chemical compound CC(C)(C)[Si] KNSVRQSOPKYFJN-UHFFFAOYSA-N 0.000 description 1
- QIMILRIEUVPAMG-UHFFFAOYSA-N tert-butylsilyl carbamate Chemical compound C(N)(O[SiH2]C(C)(C)C)=O QIMILRIEUVPAMG-UHFFFAOYSA-N 0.000 description 1
- ZGYICYBLPGRURT-UHFFFAOYSA-N tri(propan-2-yl)silicon Chemical compound CC(C)[Si](C(C)C)C(C)C ZGYICYBLPGRURT-UHFFFAOYSA-N 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- VOSJXMPCFODQAR-UHFFFAOYSA-N trisilylamine group Chemical group [SiH3]N([SiH3])[SiH3] VOSJXMPCFODQAR-UHFFFAOYSA-N 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 239000006200 vaporizer Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001868 water Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76837—Filling up the space between adjacent conductive structures; Gap-filling properties of dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
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Abstract
Description
本出願は、2017年9月13日に出願された、名称を「DIELECTRIC GAPFILL OF HIGH ASPECT RATIO FEATURES UTILIZING A SACRIFICIAL ETCH CAP LAYER」とする、米国特許出願第15/703,917号に基づく優先権を主張する。この出願は、参照により、その全体があらゆる目的のために本明細書に組み込まれる。
図12は、低圧環境を維持するためのプロセスチャンバ本体1202を有する原子層堆積(ALD)プロセスステーション1200の一実施形態の概略図を図示する。そのようなステーションは、ALD、PEALD、CVD、PECVDによる堆積、ならびにエッチバック動作を含む、特定の開示の実施形態を実施するために使用されてもよい。複数のALDプロセスステーション1200を、1つの共通の低圧プロセスツール環境に含めてもよい。例えば、図13は、マルチステーション処理ツール1300の一実施形態を図示する。いくつかの実施形態では、以下で詳細に説明されるものを含むALDプロセスステーション1200の1つ以上のハードウェアパラメータは、1つ以上のコンピュータコントローラ1250によってプログラム的に調整することができる。
実験1
実験は、5ミクロンの深さを有する15:1のフィーチャを有する基板で実施され、凹状タングステンと酸化シリコンのスタブ、およびフィーチャ開口部付近のフィーチャの上部に凹型部があった。そのような基板上への酸化シリコンの堆積を、従来の原子層堆積によって基板上で実施した結果、酸化物スタブが側壁上で出合う位置にボイドが形成された。フィーチャの上部に存在する凹型部により、上部にもボイドが形成された。別の同様の基板に対して、300サイクルのALD、NF3を使用したエッチバック、複数サイクルのALD、PECVDを利用した60秒間のヘルメットの堆積、長いエッチバック、およびフィーチャを充填するためのALD堆積を行った。得られた基板にボイドは発生せず、フィーチャ開口部の角部分から材料は除去されなかった。これらの結果は、側壁トポグラフィを有する高アスペクト比のフィーチャにおいて、ボイドを形成することなく誘電体材料によるギャップ充填を行うために利用される特定の開示のdep−etch−dep動作の実現可能性を示唆した。
実験は、160nmの深さを有する凹状フィーチャを有する基板で実施され、凹状フィーチャの表面は窒化シリコンであり、フィーチャの上部のフィーチャ開口部は25nmであり、側壁はフィーチャの底部に向かって深さ方向に狭まっていた。酸化シリコンは、プラズマとアミノシラン前駆体およびN2O/O2を使用し、40サイクルのALDを利用してフィーチャ内に堆積された。ALDに続いて、酸化シリコンヘルメットがPECVDによって125Aの厚さに堆積された。ヘルメットの堆積後、基板はNF3を使用して32秒の期間エッチングされた。ヘルメットは、エッチング中に完全に消費された。フィーチャを完全に充填するために、後続のALDが実施された。フィーチャは、ボイドがほとんど形成されないか全く形成されない状態で充填された。
前述の実施形態は、明確な理解のために多少詳しく説明されてきたが、一定の変更および修正が添付の特許請求の範囲の範囲内で実施されてもよいことは明らかであろう。本実施形態のプロセス、システム、および装置の実施には多くの別の方法があることに注意されたい。したがって、本実施形態は、限定ではなく例示と見なされるべきであり、それらの実施形態は本明細書に述べられる詳細に限定されるべきではない。
Claims (44)
- 基板上のフィーチャを充填する方法であって、
前記フィーチャを備える前記基板をプロセスチャンバに供給し、前記フィーチャはフィーチャ開口部および側壁トポグラフィを備え、前記側壁トポグラフィは前記フィーチャの前記側壁にスタブを備え、
ケイ素含有前駆体および酸化剤を使用して、前記フィーチャを充填するには不十分な期間、第1の量の酸化シリコンを堆積させ、
エッチング剤に前記第1の量の前記酸化シリコンを曝露して前記第1の量の前記酸化シリコンの少なくとも一部をエッチングし、
前記第1の量の前記酸化シリコンをエッチングした後、前記エッチングされた第1の量の前記酸化シリコン上に第2の量の前記酸化シリコンを堆積させること
を備える、方法。 - 請求項1に記載の方法であって、
前記スタブは、前記側壁の平面に垂直な100Åから約300Åの寸法を有する、方法。 - 請求項1に記載の方法であって、
前記第1の量の酸化シリコンを前記フィーチャ内に堆積させるには不十分な前記期間は、前記基板のフィールド表面上に酸化シリコンの過剰堆積部を形成する、方法。 - 請求項3に記載の方法であって、
前記エッチング剤に前記第1の量の前記酸化シリコンを曝露することは、前記フィーチャの内部よりも前記フィーチャ開口部またはその付近で前記第1の量の前記酸化シリコンの前記少なくとも一部をエッチングすることを含む、方法。 - 請求項1に記載の方法であって、
前記第2の量の前記酸化シリコンは、プラズマ強化化学気相堆積によって堆積される、方法。 - 請求項5に記載の方法はさらに、
前記第2の量の前記酸化シリコンを堆積させた後、前記エッチング剤に前記第1の量の前記酸化シリコンを曝露するために使用される前記期間よりも長い期間、前記エッチング剤に前記第2の量の前記酸化シリコンを曝露することを備える、方法。 - 請求項1に記載の方法であって、
前記フィーチャの前記側壁は、スタックに積層された2つ以上の材料を含む、方法。 - 請求項1に記載の方法であって、
前記第1の量の前記酸化シリコンの前記堆積および前記エッチング剤への前記第1の量の前記酸化シリコンの前記曝露は、真空を破ることなく実施される、方法。 - 請求項1に記載の方法であって、
前記エッチング剤への前記第1の量の前記酸化シリコンの前記曝露および前記第2の量の前記酸化シリコンの前記堆積は、真空を破ることなく実施される、方法。 - 請求項1から9のいずれか一項に記載の方法であって、
前記第1の量の前記酸化シリコンは、原子層堆積の1つ以上のサイクルによって堆積され、原子層堆積の各サイクルは、前記酸化剤と前記ケイ素含有前駆体の交互のパルスを含む、方法。 - 請求項10に記載の方法であって、
プラズマは、前記酸化剤のパルス中に点火される、方法。 - 請求項1から9のいずれか一項に記載の方法であって、
前記エッチング剤は、三フッ化窒素、フルオロホルム(CHF3)、オクタフルオロシクロブタン(C4F8)、テトラフルオロメタン(CF4)、およびそれらの組み合わせからなる群から選択される、方法。 - 請求項1から9のいずれか一項に記載の方法であって、
前記フィーチャは、少なくとも5ミクロンの深さを有する、方法。 - 請求項1から9のいずれか一項に記載の方法であって、
前記フィーチャは、少なくとも15:1のアスペクト比を有する、方法。 - 基板上のフィーチャを充填する方法であって、
前記フィーチャを備える前記基板をプロセスチャンバに供給し、前記フィーチャはフィーチャ開口部および側壁トポグラフィを備え、前記側壁トポグラフィは前記フィーチャの前記側壁にスタブを備え、
ケイ素含有前駆体および酸化剤を使用して、前記フィーチャを充填するには不十分な期間、第1の量の酸化シリコンを堆積させ、
前記第1の量の酸化シリコンを堆積させた後、かつエッチング剤に前記第1の量の酸化シリコンを曝露する前に、過剰堆積部を形成する犠牲ヘルメットを前記基板のフィールド表面上に堆積させ、
前記エッチング剤に前記基板を曝露して前記第1の量の前記酸化シリコンの少なくとも一部をエッチングし、
前記第1の量の前記酸化シリコンをエッチングした後、前記エッチングされた第1の量の前記酸化シリコン上に第2の量の前記酸化物を堆積させて前記フィーチャを少なくとも部分的に充填すること
を備える、方法。 - 請求項15に記載の方法であって、
犠牲ヘルメットは、プラズマ強化化学気相堆積によって堆積される、方法。 - 請求項15および16のいずれか一項に記載の方法であって、
前記犠牲ヘルメットは、窒化シリコンを含む、方法。 - 請求項15および16のいずれか一項に記載の方法であって、
前記犠牲ヘルメットは、酸化シリコンを含む、方法。 - 基板上のフィーチャを充填する方法であって、
前記フィーチャを備える前記基板をプロセスチャンバに供給し、前記フィーチャはフィーチャ開口部および1つ以上の凹型面を有する側壁を備え、
前記フィーチャを充填するには不十分な期間、第1の量の材料を堆積させ、
エッチング剤に前記第1の量の前記材料を曝露して、前記フィーチャ内の前記第1の量の前記材料の少なくとも一部をエッチングし、
前記第1の量の前記材料をエッチングした後、前記エッチングされた第1の量の前記材料上に第2の量の前記材料を堆積させること
を備え、
前記材料は、炭化シリコン、窒化シリコン、シリコン、タングステン、ルテニウム、銅、コバルト、およびモリブデンからなる群から選択される、
方法。 - 請求項19に記載の方法であって、
前記フィーチャ内に前記第1の量の前記材料を堆積させるのに十分な前記期間は、前記基板のフィールド表面上に前記材料の過剰堆積部を形成する、方法。 - 請求項20に記載の方法であって、
前記エッチング剤に前記第1の量の前記材料を曝露することは、前記フィーチャの内部よりも前記フィーチャ開口部またはその付近で前記第1の量の前記材料の少なくとも一部をエッチングすることを含む、方法。 - 請求項21に記載の方法であって、
前記第2の量の前記材料は、プラズマ強化化学気相堆積によって堆積される、方法。 - 請求項22に記載の方法はさらに、
前記第2の量の前記材料を堆積させた後、前記エッチング剤に前記第1の量の前記材料を曝露するために使用される前記期間よりも長い期間、前記エッチング剤に前記第2の量の前記材料を曝露することを備える、方法。 - 請求項19から23のいずれか一項に記載の方法であって、
前記フィーチャの前記側壁は、スタックに積層された2つ以上の材料を含む、方法。 - 請求項19から23のいずれか一項に記載の方法であって、
前記第1の量の前記材料の前記堆積および前記エッチング剤への前記第1の量の前記材料の前記曝露は、真空を破ることなく実施される、方法。 - 請求項19から23のいずれか一項に記載の方法であって、
前記エッチング剤への前記第1の量の前記材料の前記曝露および前記第2の量の前記材料の前記堆積は、真空を破ることなく実施される、方法。 - 基板上のフィーチャを充填する方法であって、
前記フィーチャを備える前記基板をプロセスチャンバに供給し、前記フィーチャはフィーチャ開口部および側壁トポグラフィを備え、前記側壁トポグラフィは前記フィーチャの前記側壁にスタブを備え、
前記フィーチャを充填するには不十分な期間、第1の量の第1の材料を堆積させ、
前記第1の量の第1の材料を堆積させた後、かつエッチング剤に前記第1の量の前記第1の材料を曝露する前に、過剰堆積部を形成する犠牲ヘルメットを前記基板のフィールド表面上に堆積させ、前記犠牲ヘルメットが第2の材料を含み、
前記エッチング剤に前記基板を曝露して前記第1の量の前記第1の材料の少なくとも一部をエッチングし、
前記第1の量の前記第1の材料をエッチングした後、前記エッチングされた第1の量の前記第1の材料上に第2の量の前記材料を堆積させて前記フィーチャを少なくとも部分的に充填すること
を備える、方法。 - 請求項27に記載の方法であって、
前記第1の材料は前記第2の材料とは異なる、方法。 - 請求項27に記載の方法であって、
前記第1の材料は第2の材料と組成的に同じである、方法。 - 半導体基板を処理するための装置であって、
(a)前記半導体基板を保持するための台座を備える少なくとも1つのプロセスチャンバと、
(b)真空に結合するための少なくとも1つの出口と、
(c)1つ以上のプロセスガス源に結合されている1つ以上のプロセスガス入口と、
(d)前記装置の動作を制御するためのコントローラであって、
(i)ケイ素含有前駆体および酸化剤を導入して、前記半導体基板上のフィーチャを充填するには不十分な期間、前記半導体基板上に第1の量の酸化シリコンを堆積させ、前記フィーチャはフィーチャ開口部および側壁トポグラフィを有し、前記側壁トポグラフィは前記フィーチャの前記側壁にスタブを有し、
(ii)前記第1の量の前記酸化シリコンの少なくとも一部をエッチングする期間、前記少なくとも1つのプロセスチャンバにエッチング剤を導入し、
(iii)前記少なくとも1つのプロセスチャンバに前記エッチング剤を導入した後、前記ケイ素含有前駆体および前記酸化剤を導入して、前記エッチングされた第1の量の前記酸化シリコン上に第2の量の酸化シリコンを堆積させるための機械が読み取り可能な命令を含むコントローラと
を備える、装置。 - 請求項30に記載の装置であって、
前記コントローラは、(iii)の前記期間を(i)の前記期間よりも長くするための機械が読み取り可能な命令をさらに含む、装置。 - 請求項30に記載の装置であって、
前記コントローラは、真空を破ることなく(i)および(ii)を実施させるための機械が読み取り可能な命令をさらに含む、装置。 - 請求項30に記載の装置はさらに、
プラズマを発生させるためのプラズマ発生器を備える、装置。 - 請求項30に記載の装置であって、
前記コントローラは、前記酸化剤が導入されるときにプラズマを発生させるための命令をさらに備える、装置。 - 半導体基板を処理するための装置であって、
(a)前記半導体基板を保持するための台座を備える少なくとも1つのプロセスチャンバと、
(b)真空に結合するための少なくとも1つの出口と、
(c)1つ以上のプロセスガス源に結合されている1つ以上のプロセスガス入口と、
(d)前記装置の動作を制御するためのコントローラであって、
(i)堆積前駆体および反応剤を導入して、前記半導体基板上のフィーチャを充填するには不十分な期間、第1の量の材料を堆積させ、
(ii)エッチング剤を導入して前記フィーチャ内の前記第1の量の前記材料の少なくとも一部をエッチングし、
(iii)前記エッチング剤を導入した後、前記堆積前駆体および前記反応剤を導入して、前記エッチングされた第1の量の前記材料上に第2の量の前記材料を堆積させるための機械が読み取り可能な命令を含むコントローラと
を備え、
前記材料は、炭化シリコン、窒化シリコン、シリコン、タングステン、ルテニウム、銅、コバルト、およびモリブデンのいずれか1つである、
装置。 - 請求項35に記載の装置であって、
前記コントローラは、(iii)の前記期間を(i)の前記期間よりも長くするための命令をさらに含む、装置。 - 請求項35に記載の装置であって、
前記コントローラは、真空を破ることなく(i)および(ii)を実施させるための機械が読み取り可能な命令をさらに含む、装置。 - 請求項35に記載の装置はさらに、
プラズマを発生させるためのプラズマ発生器を備える、装置。 - 請求項35に記載の装置であって、
前記コントローラは、前記反応剤が導入されるときにプラズマを発生させるための命令をさらに含む、装置。 - 半導体基板を処理するための装置であって、
(a)前記半導体基板を保持するための台座を備える少なくとも1つのプロセスチャンバと、
(b)真空に結合するための少なくとも1つの出口と、
(c)1つ以上のプロセスガス源に結合されている1つ以上のプロセスガス入口と、
(d)前記装置の動作を制御するためのコントローラであって、
(i)ケイ素含有前駆体および酸化剤を導入して、前記半導体基板上のフィーチャを充填するには不十分な期間、前記半導体基板上に第1の量の酸化シリコンを堆積させ、前記フィーチャはフィーチャ開口部および側壁トポグラフィを有し、前記側壁トポグラフィは前記フィーチャの前記側壁にスタブを有し、
(ii)過剰堆積部を形成する犠牲ヘルメットを前記半導体基板のフィールド表面上に堆積させるための1つ以上のプロセスガスを導入し、
(iii)前記第1の量の前記酸化シリコンの少なくとも一部をエッチングする期間、前記少なくとも1つのプロセスチャンバにエッチング剤を導入し、
(iv)前記少なくとも1つのプロセスチャンバに前記エッチング剤を導入した後、前記ケイ素含有前駆体および前記酸化剤を導入して、前記エッチングされた第1の量の前記酸化シリコン上に第2の量の酸化シリコンを堆積させるための機械が読み取り可能な命令を含むコントローラと
を備える、装置。 - 請求項40に記載の装置であって、
前記コントローラは、(ii)の間に第2のケイ素含有前駆体および窒素含有反応剤を供給させて前記犠牲ヘルメットを堆積させるための命令を含み、前記犠牲ヘルメットは窒化シリコンを含む、装置。 - 半導体基板を処理するための装置であって、
(a)前記半導体基板を保持するための台座を備える少なくとも1つのプロセスチャンバと、
(b)真空に結合するための少なくとも1つの出口と、
(c)1つ以上のプロセスガス源に結合されている1つ以上のプロセスガス入口と、
(d)前記装置の動作を制御するためのコントローラであって、
(i)第1の材料を堆積させるための第1のセットの堆積前駆体を導入して、前記半導体基板上のフィーチャを充填するには不十分な期間、前記半導体基板上に第1の量の前記第1の材料を堆積させ、
(ii)過剰堆積部を形成する犠牲ヘルメットを前記半導体基板のフィールド表面上に堆積させるための1つ以上のプロセスガスを導入し、前記犠牲ヘルメットは第2の材料を含み、
(iii)前記第1の量の前記第1の材料の少なくとも一部をエッチングする期間、前記少なくとも1つのプロセスチャンバにエッチング剤を導入し、
(iv)前記少なくとも1つのプロセスチャンバに前記エッチング剤を導入した後、第1のセットの堆積前駆体を導入して、前記エッチングされた第1の量の前記第1の材料上に第2の量の前記第1の材料を堆積させるための機械が読み取り可能な命令を含むコントローラと
を備える、装置。 - 請求項42に記載の装置であって、
前記第1の材料は前記第2の材料とは異なる、装置。 - 請求項42に記載の装置であって、
前記第1の材料は前記第2の材料と組成的に同じである、装置。
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US10269559B2 (en) | 2019-04-23 |
CN111344857B (zh) | 2024-04-09 |
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US20190206677A1 (en) | 2019-07-04 |
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US10658172B2 (en) | 2020-05-19 |
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US20190080903A1 (en) | 2019-03-14 |
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