JP5689398B2 - 窒化シリコン膜の成膜方法及び成膜装置 - Google Patents
窒化シリコン膜の成膜方法及び成膜装置 Download PDFInfo
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- JP5689398B2 JP5689398B2 JP2011237988A JP2011237988A JP5689398B2 JP 5689398 B2 JP5689398 B2 JP 5689398B2 JP 2011237988 A JP2011237988 A JP 2011237988A JP 2011237988 A JP2011237988 A JP 2011237988A JP 5689398 B2 JP5689398 B2 JP 5689398B2
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- 229910052581 Si3N4 Inorganic materials 0.000 title claims description 97
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims description 97
- 238000000034 method Methods 0.000 title claims description 59
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 71
- 229910052710 silicon Inorganic materials 0.000 claims description 71
- 239000010703 silicon Substances 0.000 claims description 71
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 46
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 claims description 23
- 229910021529 ammonia Inorganic materials 0.000 claims description 22
- 125000003277 amino group Chemical group 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 8
- 238000005121 nitriding Methods 0.000 claims description 8
- 239000003795 chemical substances by application Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 4
- WZUCGJVWOLJJAN-UHFFFAOYSA-N diethylaminosilicon Chemical compound CCN([Si])CC WZUCGJVWOLJJAN-UHFFFAOYSA-N 0.000 claims description 4
- AWFPGKLDLMAPMK-UHFFFAOYSA-N dimethylaminosilicon Chemical compound CN(C)[Si] AWFPGKLDLMAPMK-UHFFFAOYSA-N 0.000 claims description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- 125000000217 alkyl group Chemical group 0.000 claims description 3
- 235000017168 chlorine Nutrition 0.000 claims description 3
- 125000001309 chloro group Chemical class Cl* 0.000 claims description 3
- 229910000077 silane Inorganic materials 0.000 claims description 3
- UOERHRIFSQUTET-UHFFFAOYSA-N N-propyl-N-silylpropan-1-amine Chemical compound CCCN([SiH3])CCC UOERHRIFSQUTET-UHFFFAOYSA-N 0.000 claims description 2
- CGRVKSPUKAFTBN-UHFFFAOYSA-N N-silylbutan-1-amine Chemical compound CCCCN[SiH3] CGRVKSPUKAFTBN-UHFFFAOYSA-N 0.000 claims description 2
- -1 (Diisopropylaminosilane) Hexakisethylaminodisilane Chemical compound 0.000 claims 2
- 239000010408 film Substances 0.000 description 153
- 239000007789 gas Substances 0.000 description 78
- 238000001179 sorption measurement Methods 0.000 description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 24
- 239000011261 inert gas Substances 0.000 description 19
- 229910052814 silicon oxide Inorganic materials 0.000 description 18
- 235000012431 wafers Nutrition 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 14
- 238000011534 incubation Methods 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 9
- 229910001873 dinitrogen Inorganic materials 0.000 description 8
- 239000006185 dispersion Substances 0.000 description 8
- 230000001965 increasing effect Effects 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 238000000231 atomic layer deposition Methods 0.000 description 7
- 239000010453 quartz Substances 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- BIVNKSDKIFWKFA-UHFFFAOYSA-N N-propan-2-yl-N-silylpropan-2-amine Chemical compound CC(C)N([SiH3])C(C)C BIVNKSDKIFWKFA-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- WMAAIGILTZEOHE-UHFFFAOYSA-N n-[bis(ethylamino)-[tris(ethylamino)silyl]silyl]ethanamine Chemical compound CCN[Si](NCC)(NCC)[Si](NCC)(NCC)NCC WMAAIGILTZEOHE-UHFFFAOYSA-N 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011553 magnetic fluid Substances 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 239000012686 silicon precursor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Description
図1はこの発明の第1の実施形態に係る窒化シリコン膜の成膜方法の一例を示す流れ図、図2は図1に示す一例中の被処理体の断面例を示す断面図である。
DIPAS流量: 150sccm
処 理 時 間: 60sec
処 理 温 度: 450℃
処 理 圧 力: 532Pa(4Torr)
である。処理終了後、処理室内を、不活性ガスを用いてパージする(ステップ3)。本例では、不活性ガスとして窒素(N2)ガスを用いた。
NH3 流 量: 5000sccm
処 理 時 間: 25min
処 理 温 度: 処理の間に450℃から630℃へ上昇
処 理 圧 力: 66.7Pa(0.5Torr)
である。
図3はこの発明の第2の実施形態に係る窒化シリコン膜の成膜方法の一例を示す流れ図である。なお、一例中の被処理体の断面例は、図2A〜図2Dを代用する。
TDMAS流量: 150sccm
処 理 時 間: 15sec
処 理 温 度: 550℃
処 理 圧 力: 532Pa(4Torr)
である。処理終了後、処理室内を、不活性ガスを用いてパージする(ステップ13)。本例では、不活性ガスとして窒素ガスを用いた。
NH3 流 量: 5000sccm
処 理 時 間: 20sec
処 理 温 度: 550℃
処 理 圧 力: 53.2Pa(0.4Torr)
である。
次に、第1の実施形態、及び第2の実施形態のインキュベーション時間を、比較例と比較しながら説明する。
線II : y = 0.9265x − 14.181 …(2)
線III: y = 0.9159x − 21.846 …(3)
上記(1)、(2)、(3)式をy=0、即ち、窒化シリコン膜5の膜厚を“0”としたときのALDサイクルは次のようになる。
線II : 15サイクル(第2の実施形態)
線III: 24サイクル(比較例)
つまり、比較例ではALDサイクルを24回繰り返した後に窒化シリコン膜5が成長しだす。対して、第1の実施形態ではALDサイクルを19回繰り返した後に窒化シリコン膜5が成長しだし、第2の実施形態ではALDサイクルをさらに速い15回繰り返した後に窒化シリコン膜5が成長しだす。このように、第1、第2の実施形態は、双方ともが比較例よりも速い段階から窒化シリコン膜5が成長しだすことが明らかとなった。
第3の実施形態は、上記第1、第2の実施形態に係る窒化シリコン膜の成膜方法を実施することが可能な成膜装置の一例に関する。
第4の実施形態は、第1、又は第2の実施形態に係る窒化シリコン膜の成膜方法を利用した半導体装置の一成膜工程例に関する。
BTBAS(ビスターシャリブチルアミノシラン)
DMAS(ジメチルアミノシラン)
BDMAS(ビスジメチルアミノシラン)
DEAS(ジエチルアミノシラン)
BDEAS(ビスジエチルアミノシラン)、及び
DPAS(ジプロピルアミノシラン)
また、アミノシラン系ガスとしては、分子式中のシリコン(Si)が1つとなるものに限られるものではなく、分子式中のシリコンが2つとなるもの、例えば、ヘキサキスエチルアミノジシラン(C12H36N6Si2)なども用いることができる。
(1) (((R1R2)N)nSi2H6-n-m(R3)m …n:アミノ基の数 m:アルキル基の数
(2) ((R1)NH)nSi2H6-n-m(R3)m …n:アミノ基の数 m:アルキル基の数
(1)、(2)式において、
R1、R2、R3 = CH3、C2H5、C3H7
R1 = R2 = R3、または同じでなくても良い。
n = 1〜6の整数
m = 0、1〜5の整数
(3) (((R1R2)N)nSi2H6-n-m(Cl)m …n:アミノ基の数 m:塩素の数
(4) ((R1)NH)nSi2H6-n-m(Cl)m …n:アミノ基の数 m:塩素の数
(3)、(4)式において
R1、R2 = CH3、C2H5、C3H7
R1 = R2、または同じでなくても良い。
n = 1〜6の整数
m = 0、1〜5の整数
その他、この発明はその要旨を逸脱しない範囲で様々に変形することができる。
Claims (7)
- (1) 被処理体を処理室内に搬入する工程と、
(2) 前記処理室内にアミノシラン系ガスを導入し、前記被処理体の表面上にシリコンを吸着させる工程と、
(3) 前記処理室内にアンモニアを含むガスを導入し、前記シリコンが吸着された前記被処理体の表面上にシード層を形成する工程と、
(4) 前記処理室内に窒化シリコンを成膜する成膜ガスを導入し、前記シード層上に窒化シリコン膜を形成する工程と
を具備し、
前記(3)の工程で、前記処理室内の温度を前記窒化シリコン膜の成膜温度に上昇させることを特徴とする窒化シリコン膜の成膜方法。 - 前記(4)工程が、シリコンを含むガスと窒化剤を含むガスとを交互に供給し、前記シード層上に、窒化シリコンを堆積させていく工程であることを特徴とする請求項1に記載の窒化シリコン膜の成膜方法。
- 前記(4)工程が、シリコンを含むガスと窒化剤を含むガスとを同時に供給し、前記シード層上に、窒化シリコンを堆積させていく工程であることを特徴とする請求項1に記載の窒化シリコン膜の成膜方法。
- 前記シリコンを含むガスが、シラン系ガスであることを特徴とする請求項2又は請求項3に記載の窒化シリコン膜の成膜方法。
- 前記被処理体の表面に、少なくともシリコンを主体とする領域と、金属を主体とする領域とが含まれていることを特徴とする請求項1から請求項4のいずれか一項に記載の窒化シリコン膜の成膜方法。
- 前記アミノシラン系ガスが、
BAS(ブチルアミノシラン)
BTBAS(ビスターシャリブチルアミノシラン)
DMAS(ジメチルアミノシラン)
BDMAS(ビスジメチルアミノシラン)
TDMAS(トリジメチルアミノシラン)
DEAS(ジエチルアミノシラン)
BDEAS(ビスジエチルアミノシラン)
DPAS(ジプロピルアミノシラン)
DIPAS(ジイソプロピルアミノシラン)
ヘキサキスエチルアミノジシラン
(1) (((R1R2)N)nSi2H6-n-m(R3)m
(2) ((R1)NH)nSi2H6-n-m(R3)m
(3) (((R1R2)N)nSi2H6-n-m(Cl)m
(4) ((R1)NH)nSi2H6-n-m(Cl)m
の少なくとも一つを含むガスから選ばれることを特徴とする請求項1から請求項5のいずれか一項に記載の窒化シリコン膜の成膜方法。
(ただし、(1)、(2)式において、n:アミノ基の数、m:アルキル基の数、
(3)、(4)式において、n:アミノ基の数、m:塩素の数、
(1)〜(4)式において、n = 1〜6の整数、m = 0、1〜5の整数、
R1、R2、R3 = CH3、C2H5、C3H7 R1 = R2 = R3、または同じでなくても良い。) - 窒化シリコン膜を成膜する成膜装置であって、
被処理体を収容する処理室と、
前記処理室内に、アミノシラン系ガス、アンモニアを含むガス、及び窒化シリコンを成膜する成膜ガスを供給するガス供給機構と、を備え、
請求項1から請求項6のいずれか一項に記載の窒化シリコン膜の成膜方法を、前記処理室内において実行されるように構成されていることを特徴とする成膜装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
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JP2011237988A JP5689398B2 (ja) | 2010-12-21 | 2011-10-28 | 窒化シリコン膜の成膜方法及び成膜装置 |
TW100147335A TWI524425B (zh) | 2010-12-21 | 2011-12-20 | 氮化矽膜的成膜方法及成膜裝置 |
KR1020110138038A KR20120070516A (ko) | 2010-12-21 | 2011-12-20 | 질화 실리콘막의 성막 방법 및 성막 장치 |
CN2011104339092A CN102560417A (zh) | 2010-12-21 | 2011-12-21 | 氮化硅膜的成膜方法和成膜装置 |
US13/332,691 US8753984B2 (en) | 2010-12-21 | 2011-12-21 | Method and apparatus for forming silicon nitride film |
KR1020150178053A KR20160002613A (ko) | 2010-12-21 | 2015-12-14 | 질화 실리콘막의 성막 방법 및 성막 장치 |
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TW201250844A (en) | 2012-12-16 |
CN102560417A (zh) | 2012-07-11 |
KR20160002613A (ko) | 2016-01-08 |
US20120178264A1 (en) | 2012-07-12 |
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