JP2006287195A - 成膜方法、成膜装置及び記憶媒体 - Google Patents
成膜方法、成膜装置及び記憶媒体 Download PDFInfo
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- JP2006287195A JP2006287195A JP2006004192A JP2006004192A JP2006287195A JP 2006287195 A JP2006287195 A JP 2006287195A JP 2006004192 A JP2006004192 A JP 2006004192A JP 2006004192 A JP2006004192 A JP 2006004192A JP 2006287195 A JP2006287195 A JP 2006287195A
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- Formation Of Insulating Films (AREA)
Abstract
【解決手段】被処理体Wに対して所定の薄膜を形成するための成膜装置において、処理容器4と、被処理体を複数段に保持する保持手段12と、処理容器の外周に設けられる加熱手段86と、成膜用の複数の異なる原料ガスを混合させて混合ガスを形成する混合タンク部50と、混合ガスを処理容器内へ供給する混合ガスノズル部30と、混合ガスと反応する反応性ガスを処理容器内へ供給する反応性ガスノズル部28と、混合ガスと反応性ガスとを交互に且つ間欠的に処理容器内へ供給するように前記混合ガスと反応性ガスの供給を制御する制御手段60とを備える。
【選択図】図1
Description
そこで、不純物としてボロン(B)を添加して形成したシリコン窒化膜が、上記不純物の拡散係数や酸化バリヤ性を先のシリコン窒化膜と同等に維持しつつ、誘電率を非常に小さくして寄生容量を大幅に抑制することが可能な絶縁膜として提案されている(特許文献2)。
本発明は、以上のような問題点に着目し、これを有効に解決すべく創案されたものである。本発明の目的は、処理容器の高さ方向において添加ガスのような供給量が少ないガスを均一に分散させて供給するようにし、もって形成される薄膜中の元素の組成比を均一化させることが可能な成膜方法、成膜装置及び記憶媒体を提供することにある。
また例えば請求項4に規定するように、前記活性化手段は、前記処理容器に一体的に組み込まれている。
また例えば請求項5に規定するように、前記反応性ガスノズル部は、前記処理容器の長さ方向に沿って延びると共に、所定の間隔を隔てて複数のガス噴射孔が形成された分散ノズルを有する。
また例えば請求項7に規定するように、前記複数の原料ガス中には、供給量が他の原料ガスの供給量の1/100以下である微小量供給用原料ガスが含まれている。
また例えば請求項8に規定するように、前記反応性ガスは、窒化ガスまたは酸化ガスである。
また例えば請求項10に規定するように、前記複数の原料ガスは、シラン系ガスと添加用ガスとを含む。
また例えば請求項11に規定するように、前記シラン系ガスは、ジクロロシラン(DCS)、ヘキサクロロジシラン(HCD)、モノシラン[SiH4 ]、ジシラン[Si2 H6 ]、ヘキサメチルジシラザン(HMDS)、テトラクロロシラン(TCS)、ジシリルアミン(DSA)、トリシリルアミン(TSA)、ビスターシャルブチルアミノシラン(BTBAS)よりなる群より選択される1以上のガスである。
また例えば請求項12に規定するように、前記添加用ガスは、BCl3 、B2 H6 、BF3 、B(CH3 )3 よりなる群より選択される1以上のボロン含有ガスである。
この場合、例えば請求項15に規定するように、前記反応性ガスは、プラズマにより活性化される。
また例えば請求項17に規定するように、前記反応性ガスは、窒化ガスまたは酸化ガスである。
また例えば請求項18に規定するように、前記複数の原料ガスは、シラン系ガスと添加用ガスとを含む。
成膜用の複数の異なる原料ガスを予め混合タンク部内、或いは混合ガス通路内で混合させることによって均一化した混合ガスを形成し、この混合ガスを処理容器内へ供給するようにしたので、形成される薄膜中の面間方向における元素の組成比を均一化させることができる。
図1は本発明の係る成膜装置の一例を示す縦断面構成図、図2は成膜装置(加熱手段は省略)を示す横断面構成図、図3は各種のガスの供給のタイミングとRF(高周波)の印加のタイミングを示すタイミングチャートである。尚、ここでは原料ガスとしてシラン系ガスとボロン含有ガスとを用い、具体的には上記シラン系ガスとしてジクロロシラン(DCS)を用い、ボロン含有ガスとしてBCl3 ガスを用いる。また反応性ガスとしては、窒化ガスであるアンモニアガス(NH3 )を用い、上記NH3 ガスをプラズマにより活性化して不純物としてボロンの含有(ドープ)されたボロン含有シリコン窒化膜(SiBN)を成膜する場合を例にとって説明する。従って、ここでは上記ボロン含有ガスは、添加ガスとしても用いられることになる。
上記処理容器4の下端は、上記マニホールド8によって支持されており、このマニホールド8の下方より多数枚の被処理体としての半導体ウエハWを多段に載置した保持手段としての石英製のウエハボート12が昇降可能に挿脱自在になされている。本実施例の場合において、このウエハボート12の支柱12Aには、例えば50〜100枚程度の直径が300mmのウエハWを略等ピッチで多段に支持できるようになっている。
そして、この回転軸20の貫通部には、例えば磁性流体シール22が介設され、この回転軸20を気密にシールしつつ回転可能に支持している。また、蓋部18の周辺部とマニホールド8の下端部には、例えばOリング等よりなるシール部材24が介設されており、処理容器4内のシール性を保持している。
上記マニホールド8には、反応性ガスとしてNH3 ガスを供給するための反応性ガスノズル部28と、複数の成膜用の原料ガスを混合して形成された混合ガスを供給するための混合ガスノズル部30と、N2 ガス等の不活性ガスを供給するためのガスノズル32とが、それぞれ設けられている。具体的には、上記反応性ガスノズル部28は、上記マニホールド8の側壁を内側へ気密に貫通して上方向へ屈曲されて容器内の天井板6の近傍まで延びる石英管よりなる分散ノズル34を有している。この分散ノズル34には、その長さ方向に沿って複数(多数)のガス噴射孔34Aが所定の間隔を隔てて形成されており、各噴射孔34Aから水平方向に向けて略均一にNH3 ガスを噴射できるようになっている。
また不活性ガス用の上記ガスノズル32は、ガス通路44を介して不活性ガス源であるN2 ガス源46に接続されている。
このガス通路44には、マスフローコントローラのような流量制御器44A及び開閉弁44Bが下流側に向けて順次介設されており、必要に応じて流量制御しつつパージガスとして例えばN2 ガスを流し得るようになっている。
そして、上記処理容器4内を上方向に延びていく上記反応性ガスノズル部28の分散ノズル34は途中で処理容器4の半径方向外方へ屈曲されて、上記プラズマ区画壁72内の一番奥(処理容器4の中心より一番離れた部分)に位置され、この一番奥の部分に沿って上方に向けて起立させて設けられている。従って、高周波電源76がオンされている時に上記分散ノズル34のガス噴射孔34Aから噴射されたアンモニアガスはここで活性化されて処理容器4の中心に向けて強制的に流すようになっている。
そして上記プラズマ区画壁72の開口70の外側近傍、すなわち開口70の外側(処理容器4内)の一側には、上記混合ガスノズル部30の分散ノズル36が起立させて設けられており、この分散ノズル36に設けた各ガス噴射孔36Aより処理容器4の中心方向に向けてシラン系ガスであるDCSガスとBCl3 ガスとの混合ガスを噴射し得るようになっている。
そして処理容器4内を真空引きして所定のプロセス圧力に維持すると共に、加熱手段86への供給電力を増大させることにより、ウエハ温度を上昇させてプロセス温度を維持する。これと同時に、原料ガス源であるDCSガス源52とBCl3 ガス源54とから両原料ガスをそれぞれ流量制御しつつ流してこれらのガスを混合タンク部50内にて混合して混合ガスを形成し、そして、この混合ガスと反応性ガス源であるNH3 ガス源42からのNH3 ガスとを交互に且つ間欠的に処理容器4内へ供給し、回転しているウエハボート12に支持されているウエハWの表面にボロン含有シリコン窒化膜(SiBN)を形成する。この際、NH3 ガスを単独で供給する時に、全供給時間に亘って、或いは全供給時間の一部において高周波電源(RF電源)76をオンしてプラズマを立てるようにする。
また微小量供給用原料ガスであるBCl3 ガスをウエハ表面に吸着させる際に、吸着量はBCl3 ガスの分圧に依存するが、希釈ガスを用いることなく容器内の高さ方向に均一に供給することができるので、そのBCl3 ガスの分圧を希釈ガスを用いた場合と比較して高く維持してウエハ表面への吸着を促進させることができる。この結果、1サイクル当たりの成膜レートを維持したまま、1サイクルに要する時間を短縮化して、そのスループットを向上させることができる。例えば実験の結果、従来の成膜方法ではBCl3 ガスをウエハ表面に十分に吸着させるのに要する時間は15秒程度要したが、本発明方法によれば、その時間は2〜3秒まで縮めることができた。この結果、従来方法では1サイクルに30秒程度を要したが、本発明方法では8秒まで短縮することができ、スループットを向上できることが確認できた。
このようにプラズマを用いない場合には、プラズマを立てるための部材、例えばプラズマを形成する高周波電源76やプラズマ電極74や活性化手段66等は不要になって、上記成膜装置2から取り除かれるのは勿論である。
また図1に示す装置例では、混合ガスを供給するノズルとして多数のガス噴射孔36Aが形成された分散ノズル36を用いたが、これに限定されず、ガスノズル32と同様に一直線上になされた、いわゆるストレート管やL字状に屈曲された、いわゆるL字管等を用いることができる。このようなストレート管やL字管を用いた場合には、混合ガスは処理容器4内の下部から、或いは上部から供給されることになるので、排気口68は、処理容器4の上部、或いは下部に設けるようにして混合ガスが処理容器4内の高さ方向に沿って十分に流れるように構成する。
この場合には、上記したように、出口側の開閉弁56C、58Cを同時に開閉制御することにより、各ガス貯留タンク部102、104内で一時的に貯留されていたDCSガスとBCl3 ガスとが各ガス通路56、58内を同時に流れてきて混合ガス通路48にて混合され、処理容器4内へ間欠的に供給することができる。この結果、図1に示した装置例と同様な作用効果を発揮することができる。
また、上記実施例では、反応性ガスである窒化ガスとしてNH3 ガスを用いたが、これに限定されず、アンモニア[NH3 ]、窒素[N2 ]、一酸化二窒素[N2 O]、一酸化窒素[NO]よりなる群より選択される1以上のガスを用いることができる。
また、上記実施例では形成される薄膜の種類としてSiBN膜やSiBCN膜を形成する場合を例にとって説明したが、これに限定されず、例えばBCN膜(炭素含有ボロン窒化膜)を形成する場合にも本発明方法を適用することができる。この場合には、ボロン含有ガスと炭化水素ガスが原料ガスとなって両ガスが混合されることになる。
また被処理体としては、半導体ウエハに限定されず、ガラス基板やLCD基板等にも本発明を適用することができる。
4 処理容器
12 ウエハボート(供給手段)
28 反応性ガスノズル部
30 混合ガスノズル部
42 NH3 ガス源(反応性ガス源)
48 混合ガス通路
50 混合タンク部
52 DCSガス源(原料ガス源)
54 BCl3 ガス源
56,58 ガス通路
56C,58C 開閉弁
60 制御手段
62 記憶媒体
66 活性化手段
74 プラズマ電極
76 高周波電源
86 加熱手段
102,104 ガス貯留タンク部
W 半導体ウエハ(被処理体)
Claims (20)
- 被処理体に対して所定の薄膜を形成するための成膜装置において、
真空引き可能になされた縦型の筒体状の処理容器と、
前記被処理体を複数段に保持して前記処理容器内に挿脱される保持手段と、
前記処理容器の外周に設けられる加熱手段と、
成膜用の複数の異なる原料ガスを混合させて混合ガスを形成する混合タンク部と、
前記混合タンク部からの混合ガスを前記処理容器内へ供給する混合ガスノズル部と、
前記混合ガスと反応する反応性ガスを前記処理容器内へ供給する反応性ガスノズル部と、
前記混合ガスと前記反応性ガスとを交互に且つ間欠的に前記処理容器内へ供給するように前記混合ガスと前記反応性ガスの供給を制御する制御手段と、
を備えたことを特徴とする成膜装置。 - 被処理体に対して所定の薄膜を形成するための成膜装置において、
真空引き可能になされた縦型の筒体状の処理容器と、
前記被処理体を複数段に保持して前記処理容器内に挿脱される保持手段と、
前記処理容器の外周に設けられる加熱手段と、
異なる原料ガスを貯留する複数の原料ガス源と、
前記各原料ガス源に接続されと共に途中に開閉弁が介設されたガス通路と、
前記各ガス通路の下流側を共通に結合することにより形成される混合ガス通路と、
前記各ガス通路の内の少なくともガス供給量の多い方のガス通路に介設されるガス貯留タンク部と、
前記混合ガス通路からの混合ガスを前記処理容器内へ供給する混合ガスノズル部と、
前記混合ガスと反応する反応性ガスを貯留する反応性ガス源と、
前記反応性ガス源に接続されると共に途中に開閉弁が介設されたガス通路と、 該ガス通路からの前記反応性ガスを前記処理容器内へ供給する反応性ガスノズル部と、
前記各開閉弁を開閉させて前記混合ガスと前記反応性ガスとを交互に且つ間欠的に前記処理容器内へ供給するように前記混合ガスと前記反応性ガスの供給を制御する制御手段と、
を備えたことを特徴とする成膜装置。 - 前記反応性ガスをプラズマにより活性化するための活性化手段が設けられることを特徴とする請求項1または2記載の成膜装置。
- 前記活性化手段は、前記処理容器に一体的に組み込まれていることを特徴とする請求項3記載の成膜装置。
- 前記反応性ガスノズル部は、前記処理容器の長さ方向に沿って延びると共に、所定の間隔を隔てて複数のガス噴射孔が形成された分散ノズルを有することを特徴とする請求項1乃至4のいずれかに記載の成膜装置。
- 前記混合ガスノズル部は、前記処理容器の長さ方向に沿って延びると共に、所定の間隔を隔てて複数のガス噴射孔が形成された分散ノズルを有することを特徴とする請求項1乃至5のいずれかに記載の成膜装置。
- 前記複数の原料ガス中には、供給量が他の原料ガスの供給量の1/100以下である微小量供給用原料ガスが含まれていることを特徴とする請求項1乃至6のいずれかに記載の成膜装置。
- 前記反応性ガスは、窒化ガスまたは酸化ガスであることを特徴とする請求項1乃至7のいずれかに記載の成膜装置。
- 前記窒化ガスは、アンモニア[NH3 ]、窒素[N2 ]、一酸化二窒素[N2 O]、一酸化窒素[NO]よりなる群より選択される1以上のガスであることを特徴とする請求項8記載の成膜装置。
- 前記複数の原料ガスは、シラン系ガスと添加用ガスとを含むことを特徴とする請求項1乃至9のいずれかに記載の成膜装置。
- 前記シラン系ガスは、ジクロロシラン(DCS)、ヘキサクロロジシラン(HCD)、モノシラン[SiH4 ]、ジシラン[Si2 H6 ]、ヘキサメチルジシラザン(HMDS)、テトラクロロシラン(TCS)、ジシリルアミン(DSA)、トリシリルアミン(TSA)、ビスターシャルブチルアミノシラン(BTBAS)よりなる群より選択される1以上のガスであることを特徴とする請求項10記載の成膜装置。
- 前記添加用ガスは、BCl3 、B2 H6 、BF3 、B(CH3 )3 よりなる群より選択される1以上のボロン含有ガスであることを特徴とする請求項10または11記載の成膜装置。
- 真空引き可能になされて被処理体を複数枚収容することができる縦型の筒体状の処理容器内に、複数の原料ガスと反応性ガスとを供給して被処理体の表面に所定の薄膜を形成する成膜方法において、
前記複数の原料ガスを混合タンク部内で混合させて混合ガスを形成すると共に、前記混合ガスと前記反応性ガスとを交互に且つ間欠的に前記処理容器内へ供給するようにしたことを特徴とする成膜方法。 - 真空引き可能になされて被処理体を複数枚収容することができる縦型の筒体状の処理容器内に、複数の原料ガスと反応性ガスとを供給して被処理体の表面に所定の薄膜を形成する成膜方法において、
前記複数の原料ガスの内の少なくとも供給量の多い方の原料ガスを供給途中にて一時的にガス貯留タンク部に貯留する工程と、
前記ガス貯留タンク部から供給する前記原料ガスと他の原料ガスとを供給途中のガス通路にて混合させて混合ガスを形成すると共に、前記混合ガスと前記反応性ガスとを交互に且つ間欠的に前記処理容器内へ供給する工程とを有するようにしたことを特徴とする成膜方法。 - 前記反応性ガスは、プラズマにより活性化されることを特徴とする請求項13または14記載の成膜方法。
- 前記複数の原料ガス中には、供給量が他の原料ガスの供給量の1/100以下である微小量供給用原料ガスが含まれていることを特徴とする請求項13乃至15のいずれかに記載の成膜方法。
- 前記反応性ガスは、窒化ガスまたは酸化ガスであることを特徴とする請求項13乃至16のいずれかに記載の成膜方法。
- 前記複数の原料ガスは、シラン系ガスと添加用ガスとを含むことを特徴とする請求項13乃至17のいずれかに記載の成膜方法。
- 真空引き可能になされて被処理体を複数枚収容することができる縦型の筒体状の処理容器内に、複数の原料ガスと反応性ガスとを供給して被処理体の表面に所定の薄膜を形成するようにした成膜装置を用いて薄膜を形成するに際して、
前記複数の原料ガスを混合タンク部内で混合させて混合ガスを形成すると共に、前記混合ガスと前記反応性ガスとを交互に且つ間欠的に前記処理容器内へ供給するように前記成膜装置を制御するためのプログラムを記憶することを特徴とする記憶媒体。 - 真空引き可能になされて被処理体を複数枚収容することができる縦型の筒体状の処理容器内に、複数の原料ガスと反応性ガスとを供給して被処理体の表面に所定の薄膜を形成するようにした成膜装置を用いて薄膜を形成するに際して、
前記複数の原料ガスの内の少なくとも供給量の多い方の原料ガスを供給途中にて一時的にガス貯留タンク部に貯留する工程と、
前記ガス貯留タンク部から供給する前記原料ガスと他の原料ガスとを供給途中のガス通路にて混合させて混合ガスを形成すると共に、前記混合ガスと前記反応性ガスとを交互に且つ間欠的に前記処理容器内へ供給する工程とを行なうように前記成膜装置を制御するためのプログラムを記憶することを特徴とする記憶媒体。
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US20060207504A1 (en) | 2006-09-21 |
TW200710952A (en) | 2007-03-16 |
CN1831192B (zh) | 2011-06-29 |
CN1831192A (zh) | 2006-09-13 |
KR20060097672A (ko) | 2006-09-14 |
US8343594B2 (en) | 2013-01-01 |
KR100967238B1 (ko) | 2010-06-30 |
TWI352380B (en) | 2011-11-11 |
US20080274302A1 (en) | 2008-11-06 |
JP4506677B2 (ja) | 2010-07-21 |
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