JP2010090413A - 成膜方法及び成膜装置 - Google Patents
成膜方法及び成膜装置 Download PDFInfo
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- JP2010090413A JP2010090413A JP2008259142A JP2008259142A JP2010090413A JP 2010090413 A JP2010090413 A JP 2010090413A JP 2008259142 A JP2008259142 A JP 2008259142A JP 2008259142 A JP2008259142 A JP 2008259142A JP 2010090413 A JP2010090413 A JP 2010090413A
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- 238000000151 deposition Methods 0.000 title abstract description 9
- 230000008021 deposition Effects 0.000 title abstract description 5
- 238000012545 processing Methods 0.000 claims abstract description 121
- 239000010408 film Substances 0.000 claims abstract description 116
- 239000002994 raw material Substances 0.000 claims abstract description 42
- 239000010409 thin film Substances 0.000 claims abstract description 33
- 238000006243 chemical reaction Methods 0.000 claims abstract description 21
- 239000007789 gas Substances 0.000 claims description 316
- 238000000034 method Methods 0.000 claims description 97
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims description 62
- 239000000872 buffer Substances 0.000 claims description 61
- 238000001179 sorption measurement Methods 0.000 claims description 36
- 238000010438 heat treatment Methods 0.000 claims description 23
- 239000012495 reaction gas Substances 0.000 claims description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- 230000003213 activating effect Effects 0.000 claims description 10
- 238000005121 nitriding Methods 0.000 claims description 10
- 238000003860 storage Methods 0.000 claims description 9
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 claims description 7
- VOSJXMPCFODQAR-UHFFFAOYSA-N ac1l3fa4 Chemical compound [SiH3]N([SiH3])[SiH3] VOSJXMPCFODQAR-UHFFFAOYSA-N 0.000 claims description 6
- 150000002902 organometallic compounds Chemical class 0.000 claims description 6
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 claims description 6
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 4
- BIVNKSDKIFWKFA-UHFFFAOYSA-N N-propan-2-yl-N-silylpropan-2-amine Chemical compound CC(C)N([SiH3])C(C)C BIVNKSDKIFWKFA-UHFFFAOYSA-N 0.000 claims description 3
- CGRVKSPUKAFTBN-UHFFFAOYSA-N N-silylbutan-1-amine Chemical compound CCCCN[SiH3] CGRVKSPUKAFTBN-UHFFFAOYSA-N 0.000 claims description 3
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims description 3
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims 1
- 230000001965 increasing effect Effects 0.000 abstract description 9
- 230000002708 enhancing effect Effects 0.000 abstract 1
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- 230000008569 process Effects 0.000 description 46
- 239000004065 semiconductor Substances 0.000 description 18
- 229910052581 Si3N4 Inorganic materials 0.000 description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 14
- 238000002347 injection Methods 0.000 description 13
- 239000007924 injection Substances 0.000 description 13
- 238000010926 purge Methods 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 12
- 239000010453 quartz Substances 0.000 description 11
- 238000007796 conventional method Methods 0.000 description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 230000009931 harmful effect Effects 0.000 description 5
- 230000004913 activation Effects 0.000 description 4
- 238000005192 partition Methods 0.000 description 4
- 238000011144 upstream manufacturing Methods 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- -1 disilylamine (DSA) Chemical compound 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000007790 scraping Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000012464 large buffer Substances 0.000 description 1
- 239000011553 magnetic fluid Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- VYIRVGYSUZPNLF-UHFFFAOYSA-N n-(tert-butylamino)silyl-2-methylpropan-2-amine Chemical compound CC(C)(C)N[SiH2]NC(C)(C)C VYIRVGYSUZPNLF-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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Abstract
【解決手段】被処理体Wが収容されて真空引き可能になされた処理容器4内で被処理体Wの表面に薄膜を形成する成膜方法において、処理容器4内へ原料ガスを、間に間欠期間を挟んで複数回供給して原料ガスを被処理体Wの表面に吸着させる吸着工程と、処理容器4内へ反応ガスを供給して被処理体Wの表面に吸着している原料ガスと反応させて薄膜を形成する反応工程とを交互に複数回繰り返し行うようにする。
【選択図】図1
Description
請求項3の発明は、請求項1又は2記載において、前記被処理体は前記処理容器内で回転されており、前記吸着工程における前記原料ガスの複数回の供給は、その供給毎に前記被処理体の周方向において異なる位置に対して行うようにしたことを特徴とする。
請求項5の発明は、請求項4記載の発明において、前記シリコン含有ガスは、ジクロロシラン(DCS)、ヘキサクロロジシラン(HCD)、モノシラン[SiH4 ]、ジシラン[Si2 H6 ]、ヘキサメチルジシラザン(HMDS)、テトラクロロシラン(TCS)、ジシリルアミン(DSA)、トリシリルアミン(TSA)、ビスターシャルブチルアミノシラン(BTBAS)、ビスジエチルアミノシラン(BDEAS)、ジイソプロピルアミノシラン(DIPAS)、トリスジメチルアミノシラン(3DMAS)よりなる群より選択される1以上のガスであることを特徴とする。
請求項7の発明は、請求項6記載の発明において、前記有機金属化合物ガスは、トリメチルアルミニウム(TMA)、テトラキスジメチルアミノハフニウム(TDMAH)、テトラキスエチルメチルアミノハフニウム(TEMAH)、テトラキスエチルメチルアミノジルコニウム(TEMAZ)、テトラキスジメチルアミノチタン(TDMAT)よりなる群より選択される1以上のガスであることを特徴とする。
請求項9の発明は、請求項1乃至8のいずれか一項の記載において、前記反応ガスは、プラズマにより活性化されることを特徴とする。
請求項10の発明は、請求項1乃至9のいずれか一項の記載において、前記吸着工程における前記原料ガスの複数回の供給は、その供給毎に前記原料ガスを一時的に貯留するバッファタンク内に貯留した前記原料ガスを放出して供給するようにしたことを特徴とする。
請求項13の発明は、真空引き可能になされた処理容器と、複数枚の被処理体を前記処理容器内で保持する保持手段と、前記被処理体を加熱する加熱手段と、原料ガスを流すガス通路の途中に前記原料ガスを一時的に貯留するバッファタンクを有して前記処理容器内へ前記原料ガスを供給する原料ガス供給手段と、前記処理容器内へ反応ガスを供給する反応ガス供給手段と、装置全体を制御する装置制御部と、を備えた成膜装置を用いて前記被処理体の表面に薄膜を形成するに際して、請求項1乃至10のいずれか一項に記載の成膜方法を実行するように前記成膜装置を制御する、コンピュータに読み取り可能なプログラムを記憶することを特徴とする記憶媒体である。
請求項15の発明は、請求項14の発明において、前記反応ガスを活性化させるための活性化手段を有することを特徴とする。
処理容器内で被処理体の表面に薄膜を形成するに際して、処理容器内へ原料ガスを、間に間欠期間を挟んで複数回供給して原料ガスを被処理体の表面に吸着させる吸着工程と、処理容器内へ反応ガスを供給して被処理体の表面に吸着している原料ガスと反応させて薄膜を形成する反応工程とを交互に複数回繰り返し行うようにしたので、安全性を維持しつつ多量の原料ガスを処理容器内へ供給することができ、この結果、成膜レートを向上できるのみならず、膜中における原料ガスに含まれる元素の濃度をコントロールして、例えばこの元素濃度を高くすることができる。
図1は本発明の係る成膜装置の実施形態を示す縦断面構成図、図2は成膜装置(加熱手段は省略)を示す横断面構成図である。尚、ここでは原料ガスとしてシリコン含有ガスであるジクロロシラン(DCS)を用い、反応ガスとして窒化ガスであるアンモニアガス(NH3 )を用い、パージガスとしてN2 ガスを用い、上記NH3 ガスをプラズマにより活性化して薄膜としてシリコン窒化膜を成膜する場合を例にとって説明する。
次に、本発明に方法を用いて実際に薄膜としてシリコン窒化膜の成膜処理を行って、その時の成膜レートと薄膜の屈折率(Si濃度に依存)について測定したので、その評価結果について説明する。またこの際、比較例として従来方法を用いてシリコン窒化膜を形成した。従来方法の場合は、成膜装置例としては、図1に示すようなバッファタンクを有するものを用い、1回の吸着工程では原料ガスを1回しか供給しない供給態様を採用した。図4は従来の成膜方法における各ガスの供給態様とバッファタンクへのチャージの態様を示すタイミングチャートである。
次に、バッファタンク56内へ貯留されるDCSガスの安全性及び処理容器内へ供給されるDCSガスの安全性について検討したので、その評価結果について説明する。図6はバッファタンク内へ供給されるDCSガスのチャージ時間とバッファタンク内の圧力との関係を示すグラフである。ここでDCSガスに対して安全性を確保できるバッファタンク内の圧力の上限は600Torr(79.98kPa)である。
また、ここでは反応ガスとして窒化ガス(NH3 ガス)を用いたが、処理態様によっては、酸化ガス、或いは還元ガスを用いることもできる。
4 処理容器
12 ウエハボート(保持手段)
18 蓋部
28 反応ガス供給手段
30 原料ガス供給手段
34 パージガス供給手段
56 バッファタンク
66 活性化手段
74 プラズマ電極
76 高周波電源
86 排気系
94 加熱手段
96 装置制御部
98 記憶媒体
W 半導体ウエハ(被処理体)
Claims (16)
- 被処理体が収容されて真空引き可能になされた処理容器内で前記被処理体の表面に薄膜を形成する成膜方法において、
前記処理容器内へ原料ガスを、間に間欠期間を挟んで複数回供給して前記原料ガスを前記被処理体の表面に吸着させる吸着工程と、
前記処理容器内へ反応ガスを供給して前記被処理体の表面に吸着している前記原料ガスと反応させて前記薄膜を形成する反応工程とを交互に複数回繰り返し行うようにしたことを特徴とする成膜方法。 - 前記吸着工程と前記反応工程との間には、間欠期間が設けられていることを特徴とする請求項1記載の成膜方法。
- 前記被処理体は前記処理容器内で回転されており、前記吸着工程における前記原料ガスの複数回の供給は、その供給毎に前記被処理体の周方向において異なる位置に対して行うようにしたことを特徴とする請求項1又は2記載の成膜方法。
- 前記原料ガスは、シリコン含有ガスであることを特徴とする請求項1乃至3のいずれか一項に記載の成膜方法。
- 前記シリコン含有ガスは、ジクロロシラン(DCS)、ヘキサクロロジシラン(HCD)、モノシラン[SiH4 ]、ジシラン[Si2 H6 ]、ヘキサメチルジシラザン(HMDS)、テトラクロロシラン(TCS)、ジシリルアミン(DSA)、トリシリルアミン(TSA)、ビスターシャルブチルアミノシラン(BTBAS)、ビスジエチルアミノシラン(BDEAS)、ジイソプロピルアミノシラン(DIPAS)、トリスジメチルアミノシラン(3DMAS)よりなる群より選択される1以上のガスであることを特徴とする請求項4記載の成膜方法。
- 前記原料ガスは、有機金属化合物ガスであることを特徴とする請求項1乃至3のいずれか一項に記載の成膜方法。
- 前記有機金属化合物ガスは、トリメチルアルミニウム(TMA)、テトラキスジメチルアミノハフニウム(TDMAH)、テトラキスエチルメチルアミノハフニウム(TEMAH)、テトラキスエチルメチルアミノジルコニウム(TEMAZ)、テトラキスジメチルアミノチタン(TDMAT)よりなる群より選択される1以上のガスであることを特徴とする請求項6記載の成膜方法。
- 前記反応ガスは、窒化ガスと酸化ガスと還元ガスとよりなる群から選択される1のガスであることを特徴とする請求項1乃至7のいずれか一項に記載の成膜方法。
- 前記反応ガスは、プラズマにより活性化されることを特徴とする請求項1乃至8のいずれか一項に記載の成膜方法。
- 前記吸着工程における前記原料ガスの複数回の供給は、その供給毎に前記原料ガスを一時的に貯留するバッファタンク内に貯留した前記原料ガスを放出して供給するようにしたことを特徴とする請求項1乃至9のいずれか一項に記載の成膜方法。
- 被処理体の表面に薄膜を形成する成膜装置において、
真空引き可能になされた処理容器と、
複数枚の前記被処理体を前記処理容器内で保持する保持手段と、
前記被処理体を加熱する加熱手段と、
原料ガスを流すガス通路の途中に前記原料ガスを一時的に貯留するバッファタンクを有して前記処理容器内へ前記原料ガスを供給する原料ガス供給手段と、
前記処理容器内へ反応ガスを供給する反応ガス供給手段と、
請求項1乃至10のいずれか一項に記載の成膜方法を実行するように装置全体を制御する装置制御部と、
を備えたことを特徴とする成膜装置。 - 前記反応ガスを活性化させるための活性化手段を有することを特徴とする請求項11記載の成膜装置。
- 真空引き可能になされた処理容器と、
複数枚の被処理体を前記処理容器内で保持する保持手段と、
前記被処理体を加熱する加熱手段と、
原料ガスを流すガス通路の途中に前記原料ガスを一時的に貯留するバッファタンクを有して前記処理容器内へ前記原料ガスを供給する原料ガス供給手段と、
前記処理容器内へ反応ガスを供給する反応ガス供給手段と、
装置全体を制御する装置制御部と、
を備えた成膜装置を用いて前記被処理体の表面に薄膜を形成するに際して、
請求項1乃至10のいずれか一項に記載の成膜方法を実行するように前記成膜装置を制御する、コンピュータに読み取り可能なプログラムを記憶することを特徴とする記憶媒体。 - 被処理体の表面に薄膜を形成する成膜装置において、
真空引き可能になされた処理容器と、
複数枚の前記被処理体を前記処理容器内で保持する保持手段と、
前記被処理体を加熱する加熱手段と、
前記処理容器内へ原料ガスを供給する原料ガス供給手段と、
前記処理容器内へ反応ガスを供給する反応ガス供給手段と、
請求項1乃至9のいずれか一項に記載の成膜方法を実行するように装置全体を制御する装置制御部と、
を備えたことを特徴とする成膜装置。 - 前記反応ガスを活性化させるための活性化手段を有することを特徴とする請求項14記載の成膜装置。
- 真空引き可能になされた処理容器と、
複数枚の被処理体を前記処理容器内で保持する保持手段と、
前記被処理体を加熱する加熱手段と、
前記処理容器内へ原料ガスを供給する原料ガス供給手段と、
前記処理容器内へ反応ガスを供給する反応ガス供給手段と、
装置全体を制御する装置制御部と、
を備えた成膜装置を用いて前記被処理体の表面に薄膜を形成するに際して、
請求項1乃至9のいずれか一項に記載の成膜方法を実行するように前記成膜装置を制御する、コンピュータに読み取り可能なプログラムを記憶することを特徴とする記憶媒体。
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US20100136260A1 (en) | 2010-06-03 |
JP5233562B2 (ja) | 2013-07-10 |
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CN101713067A (zh) | 2010-05-26 |
TW201022469A (en) | 2010-06-16 |
US8257789B2 (en) | 2012-09-04 |
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