WO2022064600A1 - 半導体装置の製造方法、基板処理装置、およびプログラム - Google Patents
半導体装置の製造方法、基板処理装置、およびプログラム Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 70
- 239000004065 semiconductor Substances 0.000 title claims description 23
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 239000007789 gas Substances 0.000 claims abstract description 492
- 239000002994 raw material Substances 0.000 claims abstract description 303
- 238000012545 processing Methods 0.000 claims abstract description 186
- 239000012495 reaction gas Substances 0.000 claims abstract description 54
- 208000035404 Autolysis Diseases 0.000 claims abstract description 15
- 206010057248 Cell death Diseases 0.000 claims abstract description 15
- 230000028043 self proteolysis Effects 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims description 56
- 238000010926 purge Methods 0.000 claims description 44
- 230000015572 biosynthetic process Effects 0.000 claims description 39
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 claims description 22
- 239000005046 Chlorosilane Substances 0.000 claims description 21
- 238000000354 decomposition reaction Methods 0.000 claims description 15
- 230000008569 process Effects 0.000 claims description 15
- 239000012159 carrier gas Substances 0.000 claims description 11
- 235000012431 wafers Nutrition 0.000 description 116
- 239000011261 inert gas Substances 0.000 description 33
- 125000004429 atom Chemical group 0.000 description 22
- 238000006243 chemical reaction Methods 0.000 description 22
- 239000000460 chlorine Substances 0.000 description 16
- 238000003860 storage Methods 0.000 description 16
- 239000000543 intermediate Substances 0.000 description 15
- 229910052739 hydrogen Inorganic materials 0.000 description 14
- 229910052757 nitrogen Inorganic materials 0.000 description 14
- 230000007246 mechanism Effects 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 9
- 238000011156 evaluation Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 150000004767 nitrides Chemical class 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 230000001629 suppression Effects 0.000 description 8
- 229910052799 carbon Inorganic materials 0.000 description 7
- 230000002040 relaxant effect Effects 0.000 description 7
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 6
- -1 for example Substances 0.000 description 6
- 239000007769 metal material Substances 0.000 description 6
- 238000001179 sorption measurement Methods 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 5
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 4
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 4
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 239000003779 heat-resistant material Substances 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 3
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 229910002091 carbon monoxide Inorganic materials 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- DIIIISSCIXVANO-UHFFFAOYSA-N 1,2-Dimethylhydrazine Chemical compound CNNC DIIIISSCIXVANO-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- CFOAUMXQOCBWNJ-UHFFFAOYSA-N [B].[Si] Chemical compound [B].[Si] CFOAUMXQOCBWNJ-UHFFFAOYSA-N 0.000 description 2
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 2
- 125000003277 amino group Chemical group 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005256 carbonitriding Methods 0.000 description 2
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- HDZGCSFEDULWCS-UHFFFAOYSA-N monomethylhydrazine Chemical compound CNN HDZGCSFEDULWCS-UHFFFAOYSA-N 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 210000003254 palate Anatomy 0.000 description 2
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- NIIPNAJXERMYOG-UHFFFAOYSA-N 1,1,2-trimethylhydrazine Chemical compound CNN(C)C NIIPNAJXERMYOG-UHFFFAOYSA-N 0.000 description 1
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 101000735417 Homo sapiens Protein PAPPAS Proteins 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BIVNKSDKIFWKFA-UHFFFAOYSA-N N-propan-2-yl-N-silylpropan-2-amine Chemical compound CC(C)N([SiH3])C(C)C BIVNKSDKIFWKFA-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 102100034919 Protein PAPPAS Human genes 0.000 description 1
- 229910003697 SiBN Inorganic materials 0.000 description 1
- 229910003691 SiBr Inorganic materials 0.000 description 1
- 241000705989 Tetrax Species 0.000 description 1
- 229910010041 TiAlC Inorganic materials 0.000 description 1
- 229910010282 TiON Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- NDGSBJSAXJUQTE-UHFFFAOYSA-N azane;phosphorous acid Chemical compound N.OP(O)O NDGSBJSAXJUQTE-UHFFFAOYSA-N 0.000 description 1
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 125000006309 butyl amino group Chemical group 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- GPTXWRGISTZRIO-UHFFFAOYSA-N chlorquinaldol Chemical compound ClC1=CC(Cl)=C(O)C2=NC(C)=CC=C21 GPTXWRGISTZRIO-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- RAABOESOVLLHRU-UHFFFAOYSA-N diazene Chemical compound N=N RAABOESOVLLHRU-UHFFFAOYSA-N 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- VJIYRPVGAZXYBD-UHFFFAOYSA-N dibromosilane Chemical compound Br[SiH2]Br VJIYRPVGAZXYBD-UHFFFAOYSA-N 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- PUUOOWSPWTVMDS-UHFFFAOYSA-N difluorosilane Chemical compound F[SiH2]F PUUOOWSPWTVMDS-UHFFFAOYSA-N 0.000 description 1
- AIHCVGFMFDEUMO-UHFFFAOYSA-N diiodosilane Chemical compound I[SiH2]I AIHCVGFMFDEUMO-UHFFFAOYSA-N 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- XPBBUZJBQWWFFJ-UHFFFAOYSA-N fluorosilane Chemical compound [SiH3]F XPBBUZJBQWWFFJ-UHFFFAOYSA-N 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- OCVXZQOKBHXGRU-UHFFFAOYSA-N iodine(1+) Chemical compound [I+] OCVXZQOKBHXGRU-UHFFFAOYSA-N 0.000 description 1
- IDIOJRGTRFRIJL-UHFFFAOYSA-N iodosilane Chemical compound I[SiH3] IDIOJRGTRFRIJL-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- OWKFQWAGPHVFRF-UHFFFAOYSA-N n-(diethylaminosilyl)-n-ethylethanamine Chemical compound CCN(CC)[SiH2]N(CC)CC OWKFQWAGPHVFRF-UHFFFAOYSA-N 0.000 description 1
- AHJCYBLQMDWLOC-UHFFFAOYSA-N n-methyl-n-silylmethanamine Chemical compound CN(C)[SiH3] AHJCYBLQMDWLOC-UHFFFAOYSA-N 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000004375 physisorption Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000002407 reforming Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- AIFMYMZGQVTROK-UHFFFAOYSA-N silicon tetrabromide Chemical compound Br[Si](Br)(Br)Br AIFMYMZGQVTROK-UHFFFAOYSA-N 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- CFTHARXEQHJSEH-UHFFFAOYSA-N silicon tetraiodide Chemical compound I[Si](I)(I)I CFTHARXEQHJSEH-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 1
- PZKOFHKJGUNVTM-UHFFFAOYSA-N trichloro-[dichloro(trichlorosilyl)silyl]silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)[Si](Cl)(Cl)Cl PZKOFHKJGUNVTM-UHFFFAOYSA-N 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- GIRKRMUMWJFNRI-UHFFFAOYSA-N tris(dimethylamino)silicon Chemical compound CN(C)[Si](N(C)C)N(C)C GIRKRMUMWJFNRI-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
- H01L21/67306—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by a material, a roughness, a coating or the like
Definitions
- This disclosure relates to a semiconductor device manufacturing method, a substrate processing device, and a program.
- a substrate processing step of supplying a raw material gas or a reaction gas to a substrate and forming a film on the substrate may be performed (see, for example, Patent Document 1).
- the object of the present disclosure is to improve the step coverage (step coverage) without lowering the film formation rate of the film formed on the substrate.
- a step of supplying a raw material gas to a substrate having a recess on the surface and (B) A step of supplying the reaction gas to the substrate and It has a step of forming a film on the substrate by performing a cycle of performing the above non-simultaneously a predetermined number of times.
- the processing conditions for supplying the raw material gas to the substrate in a plurality of times and supplying the raw material gas for the first time are set, and the processing for supplying the raw material gas for the second and subsequent times is performed.
- a technique is provided in which the processing conditions are such that the self-decomposition of the raw material gas can be suppressed.
- FIG. 1 is a schematic configuration diagram of a vertical processing furnace of a substrate processing apparatus preferably used in one aspect of the present disclosure, and is a diagram showing a portion 202 of the processing furnace in a vertical cross-sectional view.
- FIG. 2 is a schematic configuration diagram of a vertical processing furnace of a substrate processing apparatus preferably used in one aspect of the present disclosure, and is a diagram showing a portion 202 of the processing furnace in a cross-sectional view taken along the line AA of FIG.
- FIG. 3 is a schematic configuration diagram of a controller 121 of a substrate processing apparatus preferably used in one aspect of the present disclosure, and is a diagram showing a control system of the controller 121 as a block diagram.
- FIG. 1 is a schematic configuration diagram of a vertical processing furnace of a substrate processing apparatus preferably used in one aspect of the present disclosure, and is a diagram showing a portion 202 of the processing furnace in a vertical cross-sectional view.
- FIG. 2 is a schematic configuration diagram of a vertical processing furnace
- FIG. 4 is a flow chart showing a film forming sequence according to one aspect of the present disclosure, and is a diagram showing changes in supply timing and partial pressure of the raw material gas of the raw material gas, the reaction gas, and the inert gas.
- FIG. 5A is an enlarged cross-sectional view of the surface of the wafer 200 after the initial layer is formed in the recesses in the initial stage of step A of the film forming sequence in one aspect of the present disclosure.
- FIG. 5B is an enlarged cross-sectional view of the surface of the wafer 200 after the first layer is formed in the recess in step A of the film forming sequence in one aspect of the present disclosure.
- FIGS. 1 to 4 One aspect of the present disclosure will be described mainly with reference to FIGS. 1 to 4. It should be noted that the drawings used in the following description are all schematic, and the relationship between the dimensions of each element on the drawing, the ratio of each element, and the like do not always match the actual ones. Further, even between the plurality of drawings, the relationship of the dimensions of each element, the ratio of each element, and the like do not always match.
- the processing furnace 202 has a heater 207 as a temperature controller (heating unit).
- the heater 207 has a cylindrical shape and is vertically installed by being supported by a holding plate.
- the heater 207 also functions as an activation mechanism (excitation portion) for activating (exciting) the gas with heat.
- a reaction tube 203 is arranged concentrically with the heater 207.
- the reaction tube 203 is made of a heat-resistant material such as quartz (SiO 2 ) or silicon carbide (SiC), and is formed in a cylindrical shape in which the upper end is closed and the lower end is open.
- a manifold 209 is arranged concentrically with the reaction tube 203.
- the manifold 209 is made of a metal material such as stainless steel (SUS), and is formed in a cylindrical shape with open upper and lower ends. The upper end of the manifold 209 is engaged with the lower end of the reaction tube 203 and is configured to support the reaction tube 203.
- An O-ring 220a as a sealing member is provided between the manifold 209 and the reaction tube 203.
- the reaction tube 203 is installed vertically like the heater 207.
- a processing container (reaction container) is mainly composed of the reaction tube 203 and the manifold 209.
- a processing chamber 201 is formed in the hollow portion of the cylinder of the processing container.
- the processing chamber 201 is configured to accommodate the wafer 200 as a substrate.
- the wafer 200 is processed in the processing chamber 201.
- Nozzles 249a to 249c as first to third supply units are provided in the processing chamber 201 so as to penetrate the side wall of the manifold 209.
- the nozzles 249a to 249c are also referred to as first to third nozzles, respectively.
- the nozzles 249a to 249c are made of a heat-resistant material such as quartz or SiC.
- Gas supply pipes 232a to 232c are connected to the nozzles 249a to 249c, respectively.
- the nozzles 249a to 249c are different nozzles, and each of the nozzles 249b and 249c is provided adjacent to the nozzle 249a.
- the gas supply pipes 232a to 232c are provided with mass flow controllers (MFCs) 241a to 241c which are flow rate controllers (flow control units) and valves 243a to 243c which are on-off valves, respectively, in order from the upstream side of the gas flow. ..
- MFCs mass flow controllers
- a gas supply pipe 232d is connected to the downstream side of the gas supply pipe 232a with respect to the valve 243a.
- a gas supply pipe 232e is connected to the downstream side of the gas supply pipe 232b on the downstream side of the valve 243b.
- the gas supply pipes 232d and 232e are provided with MFC 241d and 241e and valves 243d and 243e, respectively, in order from the upstream side of the gas flow.
- the gas supply pipes 232a to 232e are made of a metal material such as SUS.
- the nozzles 249a to 249c are arranged in an annular space in a plan view between the inner wall of the reaction tube 203 and the wafer 200, along the upper part of the inner wall of the reaction tube 203 from the lower part of the wafer 200.
- Each is provided so as to stand upward in the arrangement direction. That is, the nozzles 249a to 249c are provided in the region horizontally surrounding the wafer array region on the side of the wafer array region in which the wafer 200 is arranged, so as to be along the wafer array region.
- the nozzle 249a is arranged so as to face the exhaust port 231a, which will be described later, with the center of the wafer 200 carried into the processing chamber 201 interposed therebetween.
- the nozzles 249b and 249c are arranged so as to sandwich a straight line L passing through the nozzle 249a and the center of the exhaust port 231a along the inner wall of the reaction tube 203 (the outer peripheral portion of the wafer 200) from both sides.
- the straight line L is also a straight line passing through the nozzle 249a and the center of the wafer 200. That is, it can be said that the nozzle 249c is provided on the side opposite to the nozzle 249b with the straight line L interposed therebetween.
- the nozzles 249b and 249c are arranged line-symmetrically with the straight line L as the axis of symmetry.
- Gas supply holes 250a to 250c for supplying gas are provided on the side surfaces of the nozzles 249a to 249c, respectively. Each of the gas supply holes 250a to 250c is opened so as to face (face) the exhaust port 231a in a plan view, and gas can be supplied toward the wafer 200. A plurality of gas supply holes 250a to 250c are provided from the lower part to the upper part of the reaction tube 203.
- the raw material gas is supplied into the processing chamber 201 via the MFC 241a, the valve 243a, and the nozzle 249a.
- the reaction gas is supplied into the processing chamber 201 via the MFC 241b, the valve 243b, and the nozzle 249b.
- the reaction gas is a substance having a molecular structure (chemical structure) different from that of the raw material gas.
- the inert gas is supplied into the processing chamber 201 via the MFC 241d, 241e, the valves 243d, 243e, the gas supply pipes 232a, 232b, and the nozzles 249a, 249b, respectively. Further, from the gas supply pipe 232c, the inert gas is supplied into the processing chamber 201 via the MFC 241c, the valve 243c, and the nozzle 249c.
- the inert gas acts as a purge gas, a carrier gas, a diluting gas and the like.
- the raw material gas supply system is mainly composed of the gas supply pipe 232a, the MFC241a, and the valve 243a.
- the reaction gas supply system is mainly composed of the gas supply pipe 232b, the MFC241b, and the valve 243b.
- the gas supply pipes 232c to 232e, MFC241c to 241e, and valves 243c to 243e constitute an inert gas supply system.
- each or both of the raw material gas and the reaction gas is also referred to as a film-forming gas
- each or both of the raw material gas supply system and the reaction gas supply system is also referred to as a film-forming gas supply system.
- any or all of the gas supply systems may be configured as an integrated gas supply system 248 in which valves 243a to 243e, MFC241a to 241e, and the like are integrated.
- the integrated gas supply system 248 is connected to each of the gas supply pipes 232a to 232e, and supplies various gases into the gas supply pipes 232a to 232e, that is, the opening / closing operation of the valves 243a to 243e and the MFC 241a to 241e.
- the flow rate adjusting operation and the like are controlled by the controller 121, which will be described later.
- the integrated gas supply system 248 is configured as an integrated or divided integrated unit, and can be attached to and detached from the gas supply pipes 232a to 232e in units of the integrated unit, and is an integrated gas supply system. It is configured so that maintenance, replacement, expansion, etc. of 248 can be performed in units of integrated units.
- an exhaust port 231a for exhausting the atmosphere in the processing chamber 201 is provided below the side wall of the reaction tube 203. As shown in FIG. 2, the exhaust port 231a is provided at a position facing (facing) the nozzles 249a to 249c (gas supply holes 250a to 250c) with the wafer 200 interposed therebetween in a plan view.
- the exhaust port 231a may be provided along the upper part of the side wall of the reaction tube 203 from the lower part, that is, along the wafer arrangement region.
- An exhaust pipe 231 is connected to the exhaust port 231a.
- the exhaust pipe 231 is made of a metal material such as SUS.
- the exhaust pipe 231 is provided via a pressure sensor 245 as a pressure detector (pressure detection unit) for detecting the pressure in the processing chamber 201 and an APC (Auto Pressure Controller) valve 244 as a pressure regulator (pressure regulator).
- a vacuum pump 246 as a vacuum exhaust device is connected.
- the APC valve 244 can perform vacuum exhaust and vacuum exhaust stop in the processing chamber 201 by opening and closing the valve with the vacuum pump 246 operating, and further, with the vacuum pump 246 operating, the APC valve 244 can perform vacuum exhaust and vacuum exhaust stop. By adjusting the valve opening degree based on the pressure information detected by the pressure sensor 245, the pressure in the processing chamber 201 can be adjusted.
- the exhaust system is mainly composed of an exhaust pipe 231, an APC valve 244, and a pressure sensor 245.
- the vacuum pump 246 may be included in the exhaust system.
- a seal cap 219 is provided as a furnace palate body that can airtightly close the lower end opening of the manifold 209.
- the seal cap 219 is made of a metal material such as SUS and is formed in a disk shape.
- An O-ring 220b as a sealing member that comes into contact with the lower end of the manifold 209 is provided on the upper surface of the seal cap 219.
- a rotation mechanism 267 for rotating the boat 217 which will be described later, is installed.
- the rotation shaft 255 of the rotation mechanism 267 is made of a metal material such as SUS, and is connected to the boat 217 through the seal cap 219.
- the rotation mechanism 267 is configured to rotate the wafer 200 by rotating the boat 217.
- the seal cap 219 is configured to be vertically lifted and lowered by a boat elevator 115 as a lifting mechanism installed outside the reaction tube 203.
- the boat elevator 115 is configured as a transport device (transport mechanism) for loading and unloading (transporting) the wafer 200 into and out of the processing chamber 201 by raising and lowering the seal cap 219.
- a shutter 219s is provided as a furnace palate body that can airtightly close the lower end opening of the manifold 209 in a state where the seal cap 219 is lowered and the boat 217 is carried out from the processing chamber 201.
- the shutter 219s is made of a metal material such as SUS and is formed in a disk shape.
- An O-ring 220c as a sealing member that comes into contact with the lower end of the manifold 209 is provided on the upper surface of the shutter 219s.
- the opening / closing operation of the shutter 219s (elevating / lowering operation, rotating operation, etc.) is controlled by the shutter opening / closing mechanism 115s.
- the boat 217 as a substrate support supports a plurality of wafers, for example, 25 to 200 wafers 200 in a horizontal position and vertically aligned with each other, that is, to support them in multiple stages. It is configured to be arranged at intervals.
- the boat 217 is made of a heat resistant material such as quartz or SiC.
- a heat insulating plate 218 made of a heat-resistant material such as quartz or SiC is supported in multiple stages.
- a temperature sensor 263 as a temperature detector is installed in the reaction tube 203. By adjusting the energization condition to the heater 207 based on the temperature information detected by the temperature sensor 263, the temperature in the processing chamber 201 becomes a desired temperature distribution.
- the temperature sensor 263 is provided along the inner wall of the reaction tube 203.
- the controller 121 which is a control unit (control means), is configured as a computer including a CPU (Central Processing Unit) 121a, a RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port 121d.
- the RAM 121b, the storage device 121c, and the I / O port 121d are configured so that data can be exchanged with the CPU 121a via the internal bus 121e.
- An input / output device 122 configured as, for example, a touch panel or the like is connected to the controller 121.
- the storage device 121c is composed of, for example, a flash memory, an HDD (Hard Disk Drive), an SSD (Solid State Drive), or the like.
- a control program for controlling the operation of the board processing device, a process recipe in which the procedure and conditions for board processing described later are described, and the like are readablely stored.
- the process recipes are combined so that the controller 121 can execute each procedure in the substrate processing described later and obtain a predetermined result, and functions as a program.
- process recipes, control programs, etc. are collectively referred to simply as programs.
- a process recipe is also simply referred to as a recipe.
- the RAM 121b is configured as a memory area (work area) in which programs, data, and the like read by the CPU 121a are temporarily held.
- the I / O port 121d includes the above-mentioned MFC 241a to 241e, valves 243a to 243e, pressure sensor 245, APC valve 244, vacuum pump 246, temperature sensor 263, heater 207, rotation mechanism 267, boat elevator 115, shutter opening / closing mechanism 115s, etc. It is connected to the.
- the CPU 121a is configured to be able to read and execute a control program from the storage device 121c and read a recipe from the storage device 121c in response to an input of an operation command from the input / output device 122 or the like.
- the CPU 121a adjusts the flow rate of various gases by the MFCs 241a to 241e, opens and closes the valves 243a to 243e, opens and closes the APC valve 244, and adjusts the pressure by the APC valve 244 based on the pressure sensor 245 so as to follow the contents of the read recipe.
- the controller 121 can be configured by installing the above-mentioned program stored in the external storage device 123 in the computer.
- the external storage device 123 includes, for example, a magnetic disk such as an HDD, an optical disk such as a CD, a magneto-optical disk such as MO, a semiconductor memory such as a USB memory or an SSD, and the like.
- the storage device 121c and the external storage device 123 are configured as a computer-readable recording medium. Hereinafter, these are collectively referred to simply as a recording medium.
- recording medium may include only the storage device 121c alone, it may include only the external storage device 123 alone, or it may include both of them.
- the program may be provided to the computer by using a communication means such as the Internet or a dedicated line without using the external storage device 123.
- Substrate processing step An example of a sequence in which a wafer 200 as a substrate is processed by using the above-mentioned substrate processing apparatus as one step of a semiconductor device manufacturing process, that is, a film forming sequence for forming a film on the wafer 200.
- a silicon substrate silicon wafer
- recesses such as trenches and holes are provided on the surface of the wafer 200.
- the operation of each part constituting the substrate processing apparatus is controlled by the controller 121.
- Step A in which the raw material gas is supplied to the wafer 200 having a recess on the surface
- Step B which supplies the reaction gas to the wafer 200
- a film is formed on the wafer 200 by performing a cycle of performing the above non-simultaneously a predetermined number of times (n times, where n is an integer of 1 or more).
- step A the raw material gas is divided and supplied to the wafer 200 a plurality of times (m times, m is an integer of 2 or more), and the processing conditions for supplying the raw material gas for the first time are set to the raw materials for the second and subsequent times.
- the treatment conditions should be such that the self-decomposition of the raw material gas can be suppressed rather than the treatment conditions when supplying the gas.
- step A and step B are alternately performed n times (n is an integer of 1 or more), a step for purging the inside of the processing chamber 201 is sandwiched between them. Is preferable. Further, as shown in FIG. 4, even when the raw material gas is divided into m times (m is an integer of 1 or more) and intermittently supplied, a step of purging the inside of the processing chamber 201 is sandwiched between them. Is preferable.
- the film formation sequence in this case can be shown as follows.
- FIG. 4 shows an example of the supply timing of each of the raw material gas, the reaction gas, and the inert gas as an example of the film formation sequence in this embodiment, and an example of the transition of the partial pressure of the raw material gas accompanying the supply timing. There is.
- wafer When the word “wafer” is used in the present specification, it may mean the wafer itself or a laminate of a wafer and a predetermined layer or film formed on the surface thereof.
- wafer surface When the term “wafer surface” is used in the present specification, it may mean the surface of the wafer itself or the surface of a predetermined layer or the like formed on the wafer.
- a predetermined layer when it is described that "a predetermined layer is formed on a wafer”, it means that a predetermined layer is directly formed on the surface of the wafer itself, or a layer formed on the wafer or the like. It may mean forming a predetermined layer on top.
- the use of the term “wafer” in the present specification is also synonymous with the use of the term “wafer”.
- the inside of the processing chamber 201 is evacuated (vacuum exhaust) by the vacuum pump 246 so as to have a desired pressure (vacuum degree).
- the pressure in the processing chamber 201 is measured by the pressure sensor 245, and the APC valve 244 is feedback-controlled based on the measured pressure information (pressure adjustment).
- the wafer 200 in the processing chamber 201 is heated by the heater 207 so as to have a desired processing temperature.
- the state of energization to the heater 207 is feedback-controlled based on the temperature information detected by the temperature sensor 263 so that the inside of the processing chamber 201 has a desired temperature distribution (temperature adjustment).
- the rotation of the wafer 200 by the rotation mechanism 267 is started. Exhaust in the processing chamber 201, heating and rotation of the wafer 200 are all continuously performed at least until the processing of the wafer 200 is completed.
- Step A the raw material gas is supplied to the wafer 200 in the processing chamber 201 in a plurality of times. Specifically, step a1 for supplying the raw material gas to the wafer 200 and step a2 for purging the inside of the processing chamber 201 in which the wafer 200 exists are alternately performed a plurality of times (m times, m is 2). The above integer) Repeat.
- step a1 the valve 243a is opened and the raw material gas flows into the gas supply pipe 232a.
- the flow rate of the raw material gas is adjusted by the MFC 241a, is supplied into the processing chamber 201 via the nozzle 249a, and is exhausted from the exhaust port 231a.
- the raw material gas is supplied to the wafer 200 (raw material gas supply).
- the valves 243c to 243e are opened, and the inert gas is supplied into the processing chamber 201 via each of the nozzles 249a to 249c. In some of the methods shown below, the supply of the inert gas into the treatment chamber 201 may not be carried out.
- step a2 the valve 243a is closed and the supply of the raw material gas into the processing chamber 201 is stopped. Then, the inside of the processing chamber 201 is evacuated, and the gas or the like remaining in the processing chamber 201 is removed from the inside of the processing chamber 201. At this time, the valves 243c to 243e are opened, the inert gas is supplied as a purge gas into the processing chamber 201, exhausted from the exhaust port 231a, and the inside of the processing chamber 201 is purged with the inert gas (purge).
- steps a1 and a2 are alternately repeated a predetermined number of times under the treatment conditions described later, and the chlorosilane gas is divided into a plurality of times and supplied to the wafer 200.
- a silicon (Si) -containing layer containing chlorine (Cl) having a predetermined thickness is formed as a first layer on the outermost surface of the wafer 200 as a base.
- the Si-containing layer containing Cl has physical adsorption and chemisorption of chlorosilane gas molecules on the outermost surface of the wafer 200, physical adsorption and chemisorption of molecules of a substance partially decomposed by chlorosilane gas, and thermal decomposition of chlorosilane gas. It is formed by the deposition of Si due to.
- the Si-containing layer containing Cl may be an adsorption layer (physisorption layer or chemisorption layer) of a molecule of chlorosilane gas or a molecule of a substance in which a part of chlorosilane gas is decomposed, and is a deposited layer of Si containing Cl. There may be.
- Si contained in chlorosilane gas is adsorbed on the outermost surface of the wafer 200.
- the Si-containing layer containing Cl is also simply referred to as a Si-containing layer.
- a silane-based gas containing Si as a main element constituting the film formed on the wafer 200 can be used.
- a silane-based gas for example, a gas containing Si and halogen, that is, a halosilane gas can be used.
- Halogen includes chlorine (Cl), fluorine (F), bromine (Br), iodine (I) and the like.
- halosilane gas for example, chlorosilane gas containing Si and Cl can be used.
- the raw material gas examples include monochlorosilane (SiH 3 Cl, abbreviated as MCS) gas, dichlorosilane (SiH 2 Cl 2 , abbreviated as DCS) gas, trichlorosilane (SiHCl 3 , abbreviated as TCS) gas, and tetrachlorosilane (SiCl).
- MCS monochlorosilane
- DCS dichlorosilane
- TCS trichlorosilane
- SiCl tetrachlorosilane
- Chlorosilane gas such as hexachlorodisilane gas (Si 2 Cl 6 , abbreviation: HCDS) gas, octachlorotrisilane (Si 3 Cl 8 , abbreviation: OCTS) gas can be used.
- HCDS hexachlorodisilane
- OCTS octachlorotrisilane
- the raw material gas examples include fluorosilane gas such as tetrafluorosilane (SiF 4 ) gas and difluorosilane (SiH 2 F 2 ) gas, tetrabromosilane (SiBr 4 ) gas, and dibromosilane (SiH 2 ), in addition to chlorosilane gas.
- fluorosilane gas such as tetrafluorosilane (SiF 4 ) gas and difluorosilane (SiH 2 F 2 ) gas, tetrabromosilane (SiBr 4 ) gas, and dibromosilane (SiH 2 ), in addition to chlorosilane gas.
- Chlorosilane gas such as Br 2 ) gas
- iodosilane gas such as tetraiodosilane (SiI 4 ) gas and diiodosilane (SiH 2 I 2 ) gas
- the raw material gas one or more of these
- a gas containing Si and an amino group that is, an aminosilane gas
- the amino group is a monovalent functional group obtained by removing hydrogen (H) from ammonia, a primary amine or a secondary amine, and can be expressed as -NH 2 , -NHR, -NR 2 .
- R represents an alkyl group, and two Rs of ⁇ NR2 may be the same or different.
- raw material gas examples include tetrax (dimethylamino) silane (Si [N (CH 3 ) 2 ] 4 , abbreviation: 4DMAS) gas, tris (dimethylamino) silane (Si [N (CH 3 ) 2 ] 3 H, and so on.
- 3DMAS bis (diethylamino) silane (Si [N (C 2 H 5 ) 2 ] 2 H 2 , abbreviation: BDEAS) gas, bis (territory butyl amino) silane (SiH 2 [NH (C 4 H) 9 )] 2
- Aminosilane gas such as (abbreviated as BTBAS) gas, (diisopropylamino) silane (SiH 3 [N (C 3H 7 ) 2 ], abbreviation: DIPAS) gas can also be used.
- BTBAS bis (diethylamino) silane
- DIPAS bis (territory butyl amino) silane
- Aminosilane gas such as (abbreviated as BTBAS) gas
- DIPAS diisopropylamino) silane
- the raw material gas one or more of these can be used.
- the inert gas for example, a rare gas such as nitrogen (N 2 ) gas, argon (Ar) gas, helium (He) gas, neon (Ne) gas, xenone (Xe) gas can be used.
- a rare gas such as nitrogen (N 2 ) gas, argon (Ar) gas, helium (He) gas, neon (Ne) gas, xenone (Xe) gas
- N 2 nitrogen
- Ar argon
- He helium
- Ne neon
- Xe xenone
- Step B After the step A is completed, the reaction gas is supplied to the wafer 200 in the processing chamber 201, that is, the Si-containing layer as the first layer formed on the wafer 200.
- valve 243b is opened and the reaction gas flows into the gas supply pipe 232b.
- the flow rate of the reaction gas is adjusted by the MFC 241b, is supplied into the processing chamber 201 via the nozzle 249b, and is exhausted from the exhaust port 231a.
- the reaction gas is supplied to the wafer 200 (reaction gas supply).
- the valves 243c to 243e are opened, and the inert gas is supplied into the processing chamber 201 via each of the nozzles 249a to 249c. In some of the methods shown below, the supply of the inert gas into the treatment chamber 201 may not be carried out.
- Si-containing layer formed on the wafer 200 is nitrided by supplying the nitride gas to the wafer 200 under the treatment conditions described later. (Modified).
- SiN layer silicon nitrided layer
- SiN layer is formed on the outermost surface of the wafer 200 as a base as a second layer in which a Si-containing layer is nitrided, that is, a layer containing Si and N. ..
- the SiN layer When forming the SiN layer, impurities such as Cl contained in the Si-containing layer form a gaseous substance containing at least Cl in the process of reforming the Si-containing layer with the nitride gas, and the inside of the treatment chamber 201 Is discharged from. As a result, the SiN layer becomes a layer having less impurities such as Cl as compared with the Si-containing layer formed in step A.
- the valve 243b is closed and the supply of the nitride gas into the processing chamber 201 is stopped. Then, by the same treatment procedure as the purge in step A, the gas or the like remaining in the treatment chamber 201 is removed from the treatment chamber 201 (purge).
- reaction gas for example, nitrogen (N) and hydrogen (H) -containing gas which are nitride gas (nitriding agent) can be used.
- N and H-containing gas is both an N-containing gas and an H-containing gas.
- the N and H-containing gas preferably has an N—H bond.
- reaction gas for example, a hydrogen nitride gas such as ammonia (NH 3 ) gas, diimide (N 2 H 2 ) gas, hydrazine (N 2 H 4 ) gas, and N 3 H 8 gas can be used.
- a hydrogen nitride gas such as ammonia (NH 3 ) gas, diimide (N 2 H 2 ) gas, hydrazine (N 2 H 4 ) gas, and N 3 H 8 gas can be used.
- a hydrogen nitride gas such as ammonia (NH 3 ) gas, diimide (N 2 H 2 ) gas, hydrazine (N 2 H 4 ) gas, and N 3 H 8 gas.
- N nitrogen
- C carbon
- H hydrogen
- N, C and H-containing gas for example, an amine-based gas or an organic hydrazine-based gas can be used.
- the N, C and H-containing gas are an N-containing gas, a C-containing gas, an H-containing gas, and an N and C-containing gas.
- reaction gas examples include monoethylamine (C 2 H 5 NH 2 , abbreviated as MEA) gas, diethylamine ((C 2 H 5 ) 2 NH, abbreviated as DEA) gas, and triethylamine ((C 2 H 5 ) 3 N).
- MEA monoethylamine
- DEA diethylamine
- triethylamine ((C 2 H 5 ) 3 N).
- TEA ethylamine
- MMA monomethylamine
- DMA dimethylamine
- trimethylamine ((CH 3 ) 3 ).
- TMA methylamine-based gas and other methylamine-based gases
- organic hydrazine-based gas such as gas, trimethylhydrazine ((CH 3 ) 2 N 2 (CH 3 ) H, abbreviated as TMH) gas can be used.
- TMH trimethylhydrazine
- the reaction gas one or more of these can be used.
- the surface of the wafer 200 is subjected to, for example, silicon nitriding as a film.
- a film SiN film
- the above cycle is preferably repeated a plurality of times. That is, the thickness of the SiN layer formed per cycle is made thinner than the desired film thickness, and the thickness of the SiN film formed by laminating the SiN layers becomes the desired thickness. It is preferable to repeat the cycle multiple times.
- a silicon carbonitriding layer SiCN layer
- the wafer is subjected to the above cycle a predetermined number of times.
- a silicon carbonitriding film SiCN film
- SiCN film can be formed as a film on the surface of the 200.
- the processing conditions for supplying the raw material gas for the first time are set, and the processing for supplying the raw material gas for the second and subsequent times is performed. It is preferable to set the treatment conditions so that the self-decomposition (gas phase decomposition) of the raw material gas can be suppressed rather than the conditions.
- step A the raw material gas is divided into a plurality of times and supplied, and at that time, the processing conditions when the raw material gas is first supplied are set to be higher than the processing conditions when the raw material gas is supplied from the second time onward. It is preferable to set the treatment conditions so that the formation of intermediates of the raw material gas can be suppressed.
- step A the raw material gas is divided into a plurality of times and supplied, and at that time, the processing conditions when the raw material gas is first supplied are set as the processing conditions capable of suppressing autolysis of the raw material gas, and the second time.
- the processing conditions for supplying the raw material gas are the processing conditions for the raw material gas to self-decompose.
- step A the raw material gas is divided into a plurality of times and supplied, and at that time, the processing conditions when the raw material gas is first supplied are set as the processing conditions capable of suppressing the formation of the intermediate of the raw material gas. It is preferable that the treatment conditions for supplying the raw material gas from the second time onward are the treatment conditions for producing the intermediate of the raw material gas.
- step A the raw material gas is supplied in a plurality of times, and at that time, the supply duration of the raw material gas when the raw material gas is first supplied is set, and when the raw material gas is supplied after the second time. It is preferable that the supply duration is shorter than the supply duration of the raw material gas.
- the raw material gas is supplied in a plurality of times, and at that time, the supply flow rate of the raw material gas when the raw material gas is first supplied is the raw material when the raw material gas is supplied from the second time onward. It is preferably smaller than the gas supply flow rate.
- step A the raw material gas is supplied in a plurality of times, and at that time, when the raw material gas is supplied to the wafer 200, the inert gas is supplied as the carrier gas, and the raw material gas is supplied first. It is preferable that the supply flow rate of the carrier gas at the time of the operation is larger than the supply flow rate of the carrier gas at the time of supplying the raw material gas from the second time onward.
- step A the raw material gas is supplied in a plurality of times, and at that time, the partial pressure of the raw material gas when the raw material gas is first supplied is divided into the raw materials when the raw material gas is supplied from the second time onward. It is preferable that the pressure is lower than the partial pressure of the gas.
- step A the raw material gas is supplied in a plurality of times, and at that time, the pressure in the space where the wafer 200 exists when the raw material gas is first supplied, that is, the pressure in the processing chamber 201 is applied. It is preferable that the pressure is lower than the pressure in the processing chamber 201 when the raw material gas is supplied from the second time onward.
- step A the raw material gas is supplied in a plurality of times, and at that time, the pressure in the processing chamber 201 when the raw material gas is first supplied is applied to the treatment when the raw material gas is supplied from the second time onward.
- the pressure may be higher than the pressure in the chamber 201.
- the supply flow rate of the inert gas supplied into the processing chamber 201 when the raw material gas is first supplied is the inert gas supplied into the processing chamber 201 when the raw material gas is supplied from the second time onward.
- the partial pressure of the raw material gas when the raw material gas is first supplied is lower than the partial pressure of the raw material gas when the raw material gas is supplied from the second time onward by making the supply flow rate larger than that of.
- step A the raw material gas is divided and supplied a plurality of times (m times, m is an integer of 2 or more), and at that time, the processing conditions when the raw material gas is first supplied are set to the second and subsequent times.
- the processing conditions that can suppress the autolysis of the raw material gas rather than the processing conditions when supplying the raw material gas to the vehicle, the self-decomposition of the raw material gas is suppressed in the initial stage of step A, that is, in the initial stage of supplying the raw material gas.
- the atoms or molecules contained in the raw material gas can be uniformly adsorbed over the entire area in the recesses provided on the surface of the wafer 200.
- the atoms or molecules contained in the raw material gas can be uniformly adsorbed over the entire area of the initial adsorption site on the outermost surface of the recess.
- a Si-containing layer having a uniform thickness over the entire area of the recess that is, a Si-containing layer having high step coverage
- This layer may be a continuous layer or a discontinuous layer. In either case, the layer has high step coverage.
- Si-containing layer having excellent uniformity and high step coverage as the initial layer in the region in contact with the outermost surface in the recess, even when the treatment conditions are subsequently changed.
- the Si-containing layer formed thereafter tends to inherit the high uniformity and high step coverage in the initial layer, and continues to be a layer having high uniformity and high step coverage.
- step A the raw material gas is divided into a plurality of times (m times, m is an integer of 2 or more) and supplied, and at that time, the processing conditions for supplying the raw material gas from the second time onward are first set as the raw material gas.
- the processing conditions for supplying the raw material gas from the second time onward are first set as the raw material gas.
- the Si-containing layer formed at this time is after forming the Si-containing layer having high step coverage as the initial layer, it tends to inherit the characteristics and state of the initial layer, and continues to have high step coverage. Become.
- the first layer (Si-containing layer) that is uniform and conformal over the entire area in the recess provided on the surface of the wafer 200 without lowering the formation rate of the Si-containing layer. ) Can be formed.
- step A when the raw material gas is divided and supplied a plurality of times (m times, m is an integer of 2 or more) in step A, when m ⁇ 2, first (first time).
- the time of step a2 for purging the inside of the processing chamber 201 performed after step a1 for supplying the raw material gas is the time of step a2 for purging the inside of the processing chamber 201 performed after step a1 for supplying the raw material gas at the end (mth time). It is preferable to make it shorter than the time.
- step A when the raw material gas is divided and supplied a plurality of times (m times, m is an integer of 2 or more) and m ⁇ 3, the process performed after the second step a1 in which the raw material gas is supplied.
- the time of step a2 for purging the inside of the chamber 201 is shorter than the time of step a2 for purging the inside of the processing chamber 201 performed after the step a1 for supplying the raw material gas at the end (mth time).
- the raw material gas is finally (mth) supplied during the time of step a2 for purging the inside of the processing chamber 201, which is performed after step a1 for supplying the raw material gas in each of the first to m-1 times.
- the time is shorter than the time of step a2 for purging the inside of the processing chamber 201 performed after step a1.
- step A when the raw material gas is divided into a plurality of times (m times, m is an integer of 2 or more) and supplied, the inside of the processing chamber 201 performed after step a1 in which the raw material gas is finally supplied (mth time). It is preferable that the time of step a2 for purging is the longest among the times of step a2 to be performed a plurality of times.
- the treatment conditions in each of the above steps when, for example, chlorosilane gas is used as the raw material gas and, for example, N and H-containing gas is used as the reaction gas are exemplified.
- the notation of a numerical range such as "1 to 100 Pa" in the present specification means that the lower limit value and the upper limit value are included in the range. Therefore, for example, "1 to 100 Pa” means “1 Pa or more and 100 Pa or less”.
- the processing temperature in the present specification means the temperature of the wafer 200
- the processing pressure means the pressure in the processing chamber 201.
- the gas supply flow rate: 0 sccm means a case where the gas is not supplied.
- Chlorosilane gas supply flow rate 1 to 500 sccm, preferably 1 to 200 sccm
- Chlorosilane gas supply duration 1 to 20 seconds, preferably 1 to 10 seconds
- Inert gas supply flow rate 500 to 30000 sccm, preferably 1000 to 20000 sccm
- Treatment temperature 250-800 ° C, preferably 600-700 ° C
- Processing pressure 1 to 2666 Pa, preferably 1 to 1333 Pa, more preferably 1 to 100 Pa
- Chlorosilane gas partial pressure 0.00003 to 1333Pa, preferably 0.00005 to 222Pa, more preferably 0.00005 to 17Pa.
- Chlorosilane gas supply flow rate 1 to 2000 sccm, preferably 10 to 1000 sccm
- Chlorosilane gas supply duration 5 to 40 seconds, preferably 10 to 30 seconds
- Inert gas supply flow rate 0 to 20000 sccm, preferably 500 to 10000 sccm
- Processing pressure 1 to 2666 Pa, preferably 67 to 1333 Pa
- Chlorosilane gas partial pressure 0.00005 to 2666 Pa, preferably 0.06 to 889 Pa Is exemplified.
- Other processing conditions can be the same processing conditions as when performing the first step a1 in step A.
- Inert gas supply flow rate 1000 to 20000 sccm
- the duration of supply of the inert gas is exemplified by 1 to 20 seconds, preferably 1 to 10 seconds.
- Other processing conditions can be the same processing conditions as when performing the first step a1 in step A.
- Inert gas supply flow rate 1000 to 30000 sccm
- the duration of supply of the inert gas 5 to 60 seconds, preferably 10 to 30 seconds is exemplified.
- Other processing conditions can be the same processing conditions as when performing the first step a1 in step A.
- step A When the last (mth) step a2 is performed in step A, the treatment chamber is in a state where the supply of the inert gas into the treatment chamber 201 and the supply of the inert gas into the treatment chamber 201 are stopped.
- the exhaust in 201 may be repeated a plurality of times. That is, when performing step a2 at the end (mth time) in step A, cycle purging may be performed.
- the processing conditions in step B include N and H-containing gas supply flow rate: 1 to 20000 sccm, preferably 1000 to 10000 sccm Gas supply duration containing N and H: 1 to 120 seconds, preferably 1 to 60 seconds Inert gas supply flow rate: 0 to 20000 sccm, preferably 500 to 10000 sccm Processing pressure: 1 to 4000 Pa, preferably 1 to 3000 Pa Is exemplified.
- Other processing conditions can be the same as the processing conditions when the first step a1 is performed in step A.
- the inert gas as a purge gas is supplied into the processing chamber 201 from each of the nozzles 249a to 249c and exhausted from the exhaust port 231a.
- the inside of the treatment chamber 201 is purged, and the gas, reaction by-products, and the like remaining in the treatment chamber 201 are removed from the inside of the treatment chamber 201 (after-purge).
- the atmosphere in the processing chamber 201 is replaced with the inert gas (replacement of the inert gas), and the pressure in the treatment chamber 201 is restored to the normal pressure (return to atmospheric pressure).
- the seal cap 219 is lowered by the boat elevator 115, and the lower end of the manifold 209 is opened. Then, the processed wafer 200 is carried out (boat unloading) from the lower end of the manifold 209 to the outside of the reaction tube 203 while being supported by the boat 217. After the boat is unloaded, the shutter 219s is moved and the lower end opening of the manifold 209 is sealed by the shutter 219s via the O-ring 220c (shutter close). The processed wafer 200 is carried out of the reaction tube 203 and then taken out from the boat 217 (wafer discharge).
- step A the raw material gas is divided into a plurality of times and supplied, and at that time, the processing conditions when the raw material gas is first supplied are set to be higher than the processing conditions when the raw material gas is supplied from the second time onward.
- the atoms or molecules contained in the raw material gas are efficiently adsorbed over the entire area in the recess. It is possible to make it. As a result, it is possible to improve the step coverage without lowering the film formation rate of the film formed on the wafer 200. Further, the uniformity of the film thickness in the wafer surface of the film formed on the wafer 200 is improved, and for example, the variation in the film thickness is reduced among the upper side surface, the middle side surface, the lower side surface, and the bottom portion in the recess. Is possible.
- step A the raw material gas is divided into a plurality of times and supplied, and at that time, the processing conditions when the raw material gas is first supplied are set to be higher than the processing conditions when the raw material gas is supplied from the second time onward.
- the processing conditions so that the formation of intermediates of the raw material gas can be suppressed, the atoms or molecules contained in the raw material gas can be contained in the entire area of the recess while suppressing the formation of the intermediates of the raw material gas at the initial stage of supply of the raw material gas. It becomes possible to uniformly adsorb over the entire area.
- step A the raw material gas is divided into a plurality of times and supplied, and at that time, the treatment conditions when the raw material gas is first supplied are set as the treatment conditions capable of suppressing autolysis of the raw material gas, and the second time.
- the processing conditions for supplying the raw material gas thereafter to the processing conditions for the raw material gas to self-decompose the atoms contained in the raw material gas are suppressed while suppressing the formation of intermediates of the raw material gas at the initial stage of supplying the raw material gas.
- the molecules can be uniformly adsorbed over the entire area of the recess.
- step A the raw material gas is divided into a plurality of times and supplied, and at that time, the processing conditions when the raw material gas is first supplied are set as the processing conditions capable of suppressing the formation of the intermediate of the raw material gas.
- the processing conditions for supplying the raw material gas from the second time onward to the processing conditions for producing the intermediate of the raw material gas the raw material is suppressed while suppressing the generation of the intermediate of the raw material gas at the initial stage of supplying the raw material gas.
- Atoms or molecules contained in the gas can be uniformly adsorbed over the entire area of the recess. After that, it becomes possible to efficiently adsorb atoms or molecules contained in the raw material gas over the entire area of the recess while generating an intermediate of the raw material gas.
- step A the raw material gas is supplied in a plurality of times, and at that time, the supply duration of the raw material gas when the raw material gas is first supplied is set, and when the raw material gas is supplied after the second time.
- the supply duration shorter than the supply duration of the raw material gas, it is possible to suppress the autolysis of the raw material gas at the initial stage of the supply of the raw material gas. After that, it is possible to relatively lengthen the time for adsorbing the atoms or molecules contained in the raw material gas into the recesses while relaxing the degree of suppression of autolysis of the raw material gas.
- step A the raw material gas is supplied in a plurality of times, and at that time, the supply flow rate of the raw material gas when the raw material gas is first supplied is the raw material when the raw material gas is supplied from the second time onward.
- the flow rate smaller than the gas supply flow rate, it is possible to suppress the autolysis of the raw material gas at the initial stage of the raw material gas supply. After that, it becomes possible to relatively increase the supply flow rate of the raw material gas when adsorbing the atoms or molecules contained in the raw material gas into the recesses, while relaxing the degree of suppression of autolysis of the raw material gas.
- step A the raw material gas is supplied in a plurality of times, and at that time, the inert gas is supplied as the carrier gas when the raw material gas is supplied to the wafer 200, and the raw material gas is supplied first.
- the supply flow rate of the carrier gas larger than the supply flow rate of the carrier gas when supplying the raw material gas from the second time onward, it is possible to suppress the self-decomposition of the raw material gas at the initial stage of the raw material gas supply. It will be possible. After that, it is contained in the raw material gas by relaxing the degree of suppression of self-decomposition of the raw material gas and relatively reducing the supply flow rate of the carrier gas when adsorbing the atoms or molecules contained in the raw material gas into the recesses.
- Atoms or molecules can be efficiently adsorbed over the entire area of the recess. As a result, it is possible to improve the step coverage without lowering the film formation rate of the film formed on the wafer 200. Further, it is possible to improve the uniformity of the film thickness in the wafer surface of the film formed on the wafer 200.
- step A the raw material gas is supplied in a plurality of times, and at that time, the partial pressure of the raw material gas when the raw material gas is first supplied is divided into the raw materials when the raw material gas is supplied from the second time onward.
- the partial pressure of the raw material gas when the raw material gas is first supplied is divided into the raw materials when the raw material gas is supplied from the second time onward.
- step A the raw material gas is supplied in a plurality of times, and at that time, the pressure in the space where the wafer 200 exists (the pressure in the processing chamber 201) at the time of first supplying the raw material gas is set to 2.
- the pressure in the processing chamber 201 when supplying the raw material gas from the second time onward it is possible to suppress the self-decomposition of the raw material gas at the initial stage of supplying the raw material gas.
- the pressure in the processing chamber 201 when adsorbing the atoms or molecules contained in the raw material gas into the recesses is relatively increased to obtain the raw material gas.
- step A the raw material gas is supplied in a plurality of times, and at that time, the pressure in the processing chamber 201 when the raw material gas is first supplied is applied to the treatment when the raw material gas is supplied from the second time onward.
- the pressure may be higher than the pressure in the chamber 201.
- the supply flow rate of the inert gas supplied into the processing chamber 201 when the raw material gas is first supplied is the supply flow rate of the inert gas supplied into the processing chamber 201 when the raw material gas is supplied from the second time onward.
- the partial pressure of the raw material gas when the raw material gas is first supplied can be made lower than the partial pressure of the raw material gas when the raw material gas is supplied from the second time onward. It is possible to obtain the same effect as the effect.
- step A by alternately repeating steps a1 and a2 a plurality of times, even if an intermediate is generated during the supply of the raw material gas, the intermediate is efficiently removed and the raw material gas is used. It becomes possible to adsorb the contained atoms or molecules in the recesses. That is, it is possible to suppress film formation inhibition due to the formation of an excessive intermediate. As a result, it is possible to improve the step coverage without lowering the film formation rate of the film formed on the wafer 200. Further, it is possible to improve the uniformity of the film thickness in the wafer surface of the film formed on the wafer 200.
- step coverage of the film formed on the wafer 200 it is possible to improve the step coverage of the film formed on the wafer 200.
- at least 70% step coverage can be obtained.
- 80% or more step coverage can be obtained.
- 85% or more step coverage can be obtained.
- 90% or more step coverage can be obtained.
- step A the raw material gas is divided into a plurality of times (m times, m is an integer of 2 or more) and supplied, and at that time, the time of the first (first time) step a2 is set to the last (mth time). ) Is shorter than the time of step a2, so that the total purging time can be shortened and the decrease in the film forming rate can be suppressed.
- step A the raw material gas is divided and supplied a plurality of times (m times, m is an integer of 2 or more), and when m ⁇ 3, the time of the second step a2 is set.
- m times m is an integer of 2 or more
- m ⁇ 3 the time of the second step a2 is set.
- step A the raw material gas is divided and supplied a plurality of times (m times, m is an integer of 2 or more), and at that time, of the multiple times step a2, the last (mth) step a2 is performed.
- m times, m is an integer of 2 or more
- step A it is possible to sufficiently suppress the residual of the raw material gas in the processing chamber 201 after the completion of the last (mth) step a1 among the steps a1 performed a plurality of times.
- step B it is possible to avoid mixing the raw material gas and the reaction gas in the processing chamber 201 and suppress the generation of particles. This makes it possible to improve the film quality of the film formed on the wafer 200.
- step A when the raw material gas is divided into a plurality of times (m times, m is an integer of 2 or more) and supplied, immediately after the end of the last (mth) step a2, the raw material gas is introduced into the processing chamber 201. Reaction gas is supplied. Therefore, in order to avoid the generation of particles due to the mixing of the raw material gas remaining in the processing chamber 201 and the reaction gas supplied into the processing chamber 201, it is necessary to sufficiently perform the last (mth) step a2. There is. On the other hand, immediately after the completion of step a2 performed in each of the first to m-1 times, the raw material gas is supplied into the processing chamber 201.
- step a2 performed in each of the first to m-1 times, it is possible to shorten the purging time as compared with step a2 performed at the last (mth time).
- C and H-containing gas for example, ethylene (C 2 H 4 ) gas, acetylene (C 2 H 2 ) gas, propylene (C 3 ).
- Carbon (C) -containing gas such as H 6 ) gas, boron (B) -containing gas such as diborane (B 2 H 6 ) gas and trichloroborane (BCl 3 ) gas, oxygen (O 2 ) gas, ozone (O) 3 ) Gas, plasma-excited O 2 gas (O 2 * ), O 2 gas + hydrogen (H 2 ) gas, water vapor (H 2 O gas), hydrogen peroxide (H 2 O 2 ) gas, nitrogen phosphite
- oxygen (O) -containing gas such as (N 2 O) gas, nitrogen monoxide (NO) gas, nitrogen dioxide (NO 2 ) gas, carbon monoxide (CO) gas, carbon dioxide (CO 2 ) gas, etc. Can be done.
- the description of two gases such as "O 2 gas + H 2 gas” together means a mixed gas of H 2 gas and O 2 gas.
- the two gases may be mixed (premixed) in the supply pipe and then supplied into the processing chamber 201, or the two gases may be supplied separately from different supply pipes in the processing chamber. It may be supplied into 201 and mixed (post-mixed) in the processing chamber 201.
- the reaction gas one or more of these can be used. These are gases having different molecular structures (chemical structures), and can be used as the first reaction gas, the second reaction gas, and the third reaction gas, which will be described later.
- a silicon acid nitride film SiON film
- a silicon acid carbonized film SiOC film
- a silicon acid carbonic acid nitride film SiOCN film
- the present disclosure can also be applied to the case of forming a Si-containing film such as a silicon boron nitride film (SiBCN film), a silicon boron nitride film (SiBN film), and a silicon oxide film (SiO film).
- the treatment procedure and treatment conditions for supplying the raw material gas and the reaction gas can be, for example, the same as those in each step of the above-described embodiment. In these cases as well, the same effects as those described above can be obtained.
- a raw material gas containing a metal element such as aluminum (Al), titanium (Ti), hafnium (Hf), zirconium (Zr), tantalum (Ta), molybdenum (Mo), and tungsten (W) can be used.
- a metal element such as aluminum (Al), titanium (Ti), hafnium (Hf), zirconium (Zr), tantalum (Ta), molybdenum (Mo), and tungsten (W)
- AlN film aluminum nitride film
- TiN film titanium nitride film
- HfN film hafnium nitride film
- ZrN film zirconium nitride film
- TaN tantalum nitride film
- MoN molybdenum nitride film
- WN tungsten nitride film
- AlO film aluminum oxide film
- TiO film titanium oxide film
- HfO film hafnium oxide film
- ZrO film zirconium oxide film
- tantalum Oxide film TaO film
- MoO molybdenum oxide film
- WO titanium acid nitride film
- TiAlCN film titanium-aluminum carbonitride film
- TiAlC film titanium-aluminum carbide film
- TiAlC film titanium
- the present disclosure can also be applied when forming a film containing a metal element such as a charcoal nitride film (TiCN film).
- raw material gases are gases having different molecular structures (chemical structures), and in addition to acting as the above-mentioned raw material gas, they also act as the above-mentioned first reaction gas, second reaction gas, and third reaction gas.
- the treatment procedure and treatment conditions for supplying the raw material gas and the reaction gas can be, for example, the same as those in each step of the above-described embodiment. In these cases as well, the same effects as those described above can be obtained.
- the recipes used for each process are individually prepared according to the processing content and stored in the storage device 121c via a telecommunication line or an external storage device 123. Then, when starting each process, it is preferable that the CPU 121a appropriately selects an appropriate recipe from the plurality of recipes stored in the storage device 121c according to the processing content. This makes it possible to form films having various film types, composition ratios, film qualities, and film thicknesses with good reproducibility with one substrate processing device. In addition, the burden on the operator can be reduced, and each process can be started quickly while avoiding operation mistakes.
- the above recipe is not limited to the case of newly creating, for example, it may be prepared by changing an existing recipe already installed in the board processing device.
- the changed recipe may be installed on the substrate processing apparatus via a telecommunication line or a recording medium on which the recipe is recorded.
- the input / output device 122 included in the existing board processing device may be operated to directly change the existing recipe already installed in the board processing device.
- an example of forming a film using a batch type substrate processing apparatus that processes a plurality of substrates at one time has been described.
- the present disclosure is not limited to the above-described embodiment, and can be suitably applied to, for example, a case where a film is formed by using a single-wafer type substrate processing apparatus that processes one or several substrates at a time.
- an example of forming a film by using a substrate processing apparatus having a hot wall type processing furnace has been described.
- the present disclosure is not limited to the above-mentioned embodiment, and can be suitably applied to the case where a film is formed by using a substrate processing apparatus having a cold wall type processing furnace.
- each processing can be performed under the same processing procedure and processing conditions as the processing procedure and processing conditions in the above-mentioned aspects and modified examples, and the same as the above-mentioned aspects and modified examples. The effect is obtained.
- the above-mentioned embodiments and modifications can be used in combination as appropriate.
- the processing procedure and processing conditions at this time can be, for example, the same as the processing procedures and processing conditions in the above-described aspects and modifications.
- a SiN film was formed as a film on a wafer having recesses on the surface by the film forming sequence shown in FIG. 4, and a first evaluation sample was prepared.
- HCDS gas was used as the raw material gas
- NH3 gas was used as the reaction gas.
- the treatment conditions were set to predetermined conditions within the range of the treatment conditions described in the above-described embodiment.
- a step of supplying HCDS gas and a step of supplying NH3 gas are performed a plurality of non-simultaneously, on a wafer having a recess on the surface.
- a SiN film was formed as a film, and a second evaluation sample was prepared.
- the HCDS gas supply duration per cycle was set to be the same as the total time of the HCDS gas supply duration per cycle in the examples.
- treatment conditions were the same as the treatment conditions in the step of supplying the HCDS gas a second time in the step of supplying the HCDS gas a plurality of times in the above-mentioned example.
- Other treatment conditions including the treatment conditions in the step of supplying NH 3 gas, were the same as the treatment conditions in the examples.
- the step coverage of the SiN film in the recess of the first evaluation sample of the example and the step coverage of the SiN film in the recess of the second evaluation sample of the comparative example were measured.
- the step coverage of the SiN film in the second evaluation sample of the comparative example was less than 90%, whereas the step coverage of the SiN film in the first evaluation sample of the example was 90% or more. It was confirmed that the step coverage of the SiN film in the second evaluation sample was exceeded.
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Abstract
Description
(a)表面に凹部が設けられた基板に対して原料ガスを供給する工程と、
(b)前記基板に対して反応ガスを供給する工程と、
を非同時に行うサイクルを所定回数行うことで、前記基板上に膜を形成する工程を有し、
(a)では、前記基板に対して前記原料ガスを複数回に分割して供給し、最初に前記原料ガスを供給する際における処理条件を、2回目以降に前記原料ガスを供給する際における処理条件よりも、前記原料ガスの自己分解を抑制可能な処理条件とする技術が提供される。
以下、本開示の一態様について、主に、図1~図4を参照しながら説明する。なお、以下の説明において用いられる図面は、いずれも模式的なものであり、図面上の各要素の寸法の関係、各要素の比率等は、現実のものとは必ずしも一致していない。また、複数の図面の相互間においても、各要素の寸法の関係、各要素の比率等は必ずしも一致していない。
図1に示すように、処理炉202は温度調整器(加熱部)としてのヒータ207を有する。ヒータ207は円筒形状であり、保持板に支持されることにより垂直に据え付けられている。ヒータ207は、ガスを熱で活性化(励起)させる活性化機構(励起部)としても機能する。
上述の基板処理装置を用い、半導体装置の製造工程の一工程として、基板としてのウエハ200に対し処理を行うシーケンス例、すなわち、ウエハ200上に膜を形成する成膜シーケンス例について、主に、図4を用いて説明する。なお、本態様では、ウエハ200として、その表面にトレンチやホール等の凹部が設けられたシリコン基板(シリコンウエハ)を用いる例について説明する。以下の説明において、基板処理装置を構成する各部の動作はコントローラ121により制御される。
表面に凹部が設けられたウエハ200に対して原料ガスを供給するステップAと、
ウエハ200に対して反応ガスを供給するステップBと、
を非同時に行うサイクルを所定回数(n回、nは1以上の整数)行うことで、ウエハ200上に膜を形成する。
ステップAにおいて、ウエハ200に対して原料ガスを複数回(m回、mは2以上の整数)に分割して供給し、最初に原料ガスを供給する際における処理条件を、2回目以降に原料ガスを供給する際における処理条件よりも、原料ガスの自己分解を抑制可能な処理条件とする。なお、図4は、一例として、ステップAにおいて、ウエハ200に対して原料ガスを3回に分割して断続的に供給する場合(m=3とする場合)を示している。
複数枚のウエハ200がボート217に装填(ウエハチャージ)された後、シャッタ開閉機構115sによりシャッタ219sが移動させられて、マニホールド209の下端開口が開放される(シャッタオープン)。その後、図1に示すように、複数枚のウエハ200を支持したボート217は、ボートエレベータ115によって持ち上げられて処理室201内へ搬入(ボートロード)される。この状態で、シールキャップ219は、Oリング220bを介してマニホールド209の下端をシールした状態となる。
ボートロードが終了した後、処理室201内、すなわち、ウエハ200が存在する空間が所望の圧力(真空度)となるように、真空ポンプ246によって真空排気(減圧排気)される。この際、処理室201内の圧力は圧力センサ245で測定され、この測定された圧力情報に基づきAPCバルブ244がフィードバック制御される(圧力調整)。また、処理室201内のウエハ200が所望の処理温度となるように、ヒータ207によって加熱される。この際、処理室201内が所望の温度分布となるように、温度センサ263が検出した温度情報に基づきヒータ207への通電具合がフィードバック制御される(温度調整)。また、回転機構267によるウエハ200の回転を開始する。処理室201内の排気、ウエハ200の加熱および回転は、いずれも、少なくともウエハ200に対する処理が終了するまでの間は継続して行われる。
その後、以下のステップA,Bを順次実行する。
本ステップでは、処理室201内のウエハ200に対して原料ガスを複数回に分割して供給する。具体的には、ウエハ200に対して原料ガスを供給するステップa1と、ウエハ200が存在する空間である処理室201内をパージするステップa2と、を交互に複数回(m回、mは2以上の整数)繰り返す。
ステップAが終了した後、処理室201内のウエハ200、すなわち、ウエハ200上に形成された第1層としてのSi含有層に対して反応ガスを供給する。
上述のステップA,Bを非同時に、すなわち、同期させることなく行うサイクルを所定回数(n回、nは1以上の整数)行うことにより、ウエハ200の表面上に、膜として、例えば、シリコン窒化膜(SiN膜)を形成することができる。上述のサイクルは、複数回繰り返すことが好ましい。すなわち、1サイクルあたりに形成されるSiN層の厚さを所望の膜厚よりも薄くし、SiN層を積層することで形成されるSiN膜の厚さが所望の厚さになるまで、上述のサイクルを複数回繰り返すことが好ましい。なお、反応ガスとして、N,C及びH含有ガスを用いる場合、第2層として、例えば、シリコン炭窒化層(SiCN層)を形成することもでき、上述のサイクルを所定回数行うことで、ウエハ200の表面上に、膜として、例えば、シリコン炭窒化膜(SiCN膜)を形成することもできる。
クロロシランガス供給流量:1~500sccm、好ましくは1~200sccm
クロロシランガス供給継続時間:1~20秒、好ましくは1~10秒
不活性ガス供給流量:500~30000sccm、好ましくは1000~20000sccm
処理温度:250~800℃、好ましくは600~700℃
処理圧力:1~2666Pa、好ましくは1~1333Pa、より好ましくは1~100Pa
クロロシランガス分圧:0.00003~1333Pa、好ましくは0.00005~222Pa、より好ましくは0.00005~17Pa
が例示される。
クロロシランガス供給流量:1~2000sccm、好ましくは10~1000sccm
クロロシランガス供給継続時間:5~40秒、好ましくは10~30秒
不活性ガス供給流量:0~20000sccm、好ましくは500~10000sccm
処理圧力:1~2666Pa、好ましくは67~1333Pa
クロロシランガス分圧:0.00005~2666Pa、好ましくは0.06~889Pa
が例示される。他の処理条件は、ステップAにおいて1回目のステップa1を行う際の処理条件と同様な処理条件とすることができる。
不活性ガス供給流量:1000~20000sccm
不活性ガス供給継続時間:1~20秒、好ましくは1~10秒
が例示される。他の処理条件は、ステップAにおいて1回目のステップa1を行う際の処理条件と同様な処理条件とすることができる。
不活性ガス供給流量:1000~30000sccm
不活性ガス供給継続時間:5~60秒、好ましくは10~30秒
が例示される。他の処理条件は、ステップAにおいて1回目のステップa1を行う際の処理条件と同様な処理条件とすることができる。
N及びH含有ガス供給流量:1~20000sccm、好ましくは1000~10000sccm
N及びH含有ガス供給継続時間:1~120秒、好ましくは1~60秒
不活性ガス供給流量:0~20000sccm、好ましくは500~10000sccm
処理圧力:1~4000Pa、好ましくは1~3000Pa
が例示される。他の処理条件は、ステップAにおいて1回目のステップa1を行う際の処理条件と同様とすることができる。
ウエハ200上への所望の厚さの膜の形成が完了した後、ノズル249a~249cのそれぞれから、パージガスとしての不活性ガスを処理室201内へ供給し、排気口231aより排気する。これにより、処理室201内がパージされ、処理室201内に残留するガスや反応副生成物等が処理室201内から除去される(アフターパージ)。その後、処理室201内の雰囲気が不活性ガスに置換され(不活性ガス置換)、処理室201内の圧力が常圧に復帰される(大気圧復帰)。
その後、ボートエレベータ115によりシールキャップ219が下降され、マニホールド209の下端が開口される。そして、処理済のウエハ200が、ボート217に支持された状態でマニホールド209の下端から反応管203の外部に搬出(ボートアンロード)される。ボートアンロードの後は、シャッタ219sが移動させられ、マニホールド209の下端開口がOリング220cを介してシャッタ219sによりシールされる(シャッタクローズ)。処理済のウエハ200は、反応管203の外部に搬出された後、ボート217より取り出される(ウエハディスチャージ)。
本態様によれば、以下に示す1つ又は複数の効果が得られる。
以上、本開示の態様を具体的に説明した。しかしながら、本開示は上述の態様に限定されるものではなく、その要旨を逸脱しない範囲で種々変更可能である。
[(原料ガス→パージ)×m→第1反応ガス→パージ→第2反応ガス→パージ]×n
[(原料ガス→パージ)×m→第1反応ガス→パージ→第2反応ガス→パージ→第3反応ガス→パージ]×n
Claims (20)
- (a)表面に凹部が設けられた基板に対して原料ガスを供給する工程と、
(b)前記基板に対して反応ガスを供給する工程と、
を非同時に行うサイクルを所定回数行うことで、前記基板上に膜を形成する工程を有し、
(a)では、前記基板に対して前記原料ガスを複数回に分割して供給し、最初に前記原料ガスを供給する際における処理条件を、2回目以降に前記原料ガスを供給する際における処理条件よりも、前記原料ガスの自己分解を抑制可能な処理条件とする半導体装置の製造方法。 - (a)では、最初に前記原料ガスを供給する際における処理条件を、2回目以降に前記原料ガスを供給する際における処理条件よりも、前記原料ガスの中間体の生成を抑制可能な処理条件とする請求項1に記載の半導体装置の製造方法。
- (a)では、最初に前記原料ガスを供給する際における処理条件を、前記原料ガスの自己分解を抑制可能な処理条件とし、2回目以降に前記原料ガスを供給する際における処理条件を、前記原料ガスが自己分解する処理条件とする請求項1に記載の半導体装置の製造方法。
- (a)では、最初に前記原料ガスを供給する際における処理条件を、前記原料ガスの中間体の生成を抑制可能な処理条件とし、2回目以降に前記原料ガスを供給する際における処理条件を、前記原料ガスの中間体が生成される処理条件とする請求項1に記載の半導体装置の製造方法。
- (a)では、最初に前記原料ガスを供給する際における前記原料ガスの供給継続時間を、2回目以降に前記原料ガスを供給する際における前記原料ガスの供給継続時間よりも、短くする請求項1に記載の半導体装置の製造方法。
- (a)では、最初に前記原料ガスを供給する際における前記原料ガスの供給流量を、2回目以降に前記原料ガスを供給する際における前記原料ガスの供給流量よりも、小さくする請求項1に記載の半導体装置の製造方法。
- (a)では、更に、キャリアガスを供給し、最初に前記原料ガスを供給する際における前記キャリアガスの供給流量を、2回目以降に前記原料ガスを供給する際における前記キャリアガスの供給流量よりも、大きくする請求項1に記載の半導体装置の製造方法。
- (a)では、最初に前記原料ガスを供給する際における前記原料ガスの分圧を、2回目以降に前記原料ガスを供給する際における前記原料ガスの分圧よりも、低くする請求項1に記載の半導体装置の製造方法。
- (a)では、最初に前記原料ガスを供給する際における前記基板が存在する空間の圧力を、2回目以降に前記原料ガスを供給する際における前記基板が存在する空間の圧力よりも、低くする請求項1に記載の半導体装置の製造方法。
- (a)では、前記基板に対して前記原料ガスを供給する工程と、前記基板が存在する空間をパージする工程と、を交互に複数回繰り返す請求項1に記載の半導体装置の製造方法。
- (a)では、最初に前記原料ガスを供給する工程の後に行う前記基板が存在する空間をパージする工程の時間を、最後に前記原料ガスを供給する工程の後に行う前記基板が存在する空間をパージする工程の時間よりも短くする請求項10に記載の半導体装置の製造方法。
- (a)では、2回目に前記原料ガスを供給する工程の後に行う前記基板が存在する空間をパージする工程の時間を、最後に前記原料ガスを供給する工程の後に行う前記基板が存在する空間をパージする工程の時間よりも短くする請求項11に記載の半導体装置の製造方法。
- (a)では、前記基板が存在する空間をパージする工程のうち、最後に前記原料ガスを供給する工程の後に行う前記基板が存在する空間をパージする工程の時間を、最も長くする請求項10に記載の半導体装置の製造方法。
- 前記原料ガスは、ハロシランガスを含む請求項1に記載の半導体装置の製造方法。
- 前記原料ガスは、クロロシランガスを含む請求項1に記載の半導体装置の製造方法。
- 前記基板上に膜を形成する工程では、80%以上のステップカバレッジが得られるように(a)と(b)とを非同時に行うサイクルを所定回数行う請求項1に記載の半導体装置の製造方法。
- 前記基板上に膜を形成する工程では、85%以上のステップカバレッジが得られるように(a)と(b)とを非同時に行うサイクルを所定回数行う請求項1に記載の半導体装置の製造方法。
- 前記基板上に膜を形成する工程では、90%以上のステップカバレッジが得られるように(a)と(b)とを非同時に行うサイクルを所定回数行う請求項1に記載の半導体装置の製造方法。
- 基板が処理される処理室と、
前記処理室内の基板に対して原料ガスを供給する原料ガス供給系と、
前記処理室内の基板に対して反応ガスを供給する反応ガス供給系と、
前記処理室内の基板を加熱するヒータと、
前記処理室内において、(a)表面に凹部が設けられた基板に対して前記原料ガスを供給する処理と、(b)前記基板に対して反応ガスを供給する処理と、を非同時に行うサイクルを所定回数行うことで、前記基板上に膜を形成する処理を行わせ、(a)では、前記基板に対して前記原料ガスを複数回に分割して供給し、最初に前記原料ガスを供給する際における処理条件を、2回目以降に前記原料ガスを供給する際における処理条件よりも、前記原料ガスの自己分解を抑制可能な処理条件とするように、前記原料ガス供給系、前記反応ガス供給系、および前記ヒータを制御することが可能なよう構成される制御部と、
を有する基板処理装置。 - 基板処理装置の処理室内において、
(a)表面に凹部が設けられた基板に対して原料ガスを供給する手順と、
(b)前記基板に対して反応ガスを供給する手順と、
を非同時に行うサイクルを所定回数行うことで、前記基板上に膜を形成する手順と、
(a)において、前記基板に対して前記原料ガスを複数回に分割して供給し、最初に前記原料ガスを供給する際における処理条件を、2回目以降に前記原料ガスを供給する際における処理条件よりも、前記原料ガスの自己分解を抑制可能な処理条件とする手順と、
をコンピュータによって前記基板処理装置に実行させるプログラム。
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