CN107004561A - 具有直接出口环状等离子体源的等离子体处理系统 - Google Patents

具有直接出口环状等离子体源的等离子体处理系统 Download PDF

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CN107004561A
CN107004561A CN201580066116.8A CN201580066116A CN107004561A CN 107004561 A CN107004561 A CN 107004561A CN 201580066116 A CN201580066116 A CN 201580066116A CN 107004561 A CN107004561 A CN 107004561A
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D·卢博米尔斯基
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Abstract

等离子体处理系统包括处理腔室及等离子体源，该等离子体源在等离子体腔中产生等离子体。该等离子体腔围绕环轴是实质对称的。该等离子体源在该等离子体腔的第一轴向侧上限定多个出口孔。由该等离子体所产生的等离子体产物在轴向方向上通过该多个出口孔从该等离子体腔朝该处理腔室传递。一种等离子体处理的方法，包括以下步骤：在实质环状的等离子体腔内产生等离子体以形成等离子体产物，该实质环状的等离子体腔限定环轴，及通过多个出口开口向处理腔室将等离子体产物直接分布进处理腔室中，该多个出口开口实质在方位上分布于该等离子体腔的第一轴向侧周围。

Description

具有直接出口环状等离子体源的等离子体处理系统
技术领域
本公开广泛地应用于等离子体处理设备的领域。更具体而言，公开了用于提供空间上均匀的等离子体产物的系统及方法。
背景技术
半导体处理通常利用等离子体处理来在半导体晶片上蚀刻、清洁或沉积材料。所有这样的处理在受处理晶片的整个表面上有利地是高度均匀的。在这几年，显著地，在特征尺寸已减小的同时晶片尺寸已增加，以致于每个受处理晶片可收获更多的集成电路。典型的晶片直径从1970年代的约2或3英寸增加到2010年代的12英寸或更大。在同一时间框架下，商用集成电路的典型最小特征尺寸从约5微米减小到约0.015微米。在晶片生长得更大的同时处理较小的特征需要处理均匀性上的显著改进。晶片以外的工件的等离子体处理亦可受益于改进的处理均匀性。
发明内容
在实施例中，一种等离子体处理系统包括处理腔室及等离子体源，该等离子体源在等离子体腔中产生等离子体。该等离子体腔围绕环轴是实质对称的。该等离子体源在该等离子体腔的第一轴向侧上限定多个出口孔。由该等离子体所产生的等离子体产物在轴向方向上通过该多个出口孔从该等离子体腔朝该处理腔室传递。
在实施例中，一种等离子体处理系统包括：处理腔室，围绕腔室轴是实质径向对称的；外等离子体源，在外等离子体腔中产生第一等离子体；及内等离子体源，在内等离子体腔中产生第二等离子体。该外等离子体腔及该内等离子体腔围绕环轴是径向对称的，该环轴与该腔室轴重合。该内等离子体腔是自该外等离子体腔径向朝内的。该外及内等离子体腔沿该外等离子体源的第一轴向侧通过相应的外及内出口开口与该处理腔室流体连通，使得由该第一等离子体所产生的等离子体产物在轴向方向上通过该外及内出口开口从该外及内等离子体腔朝该处理腔室传递。
在实施例中，一种等离子体处理的方法包括以下步骤：在实质环状的等离子体腔内产生等离子体以形成等离子体产物，该实质环状的等离子体腔限定环轴，及通过多个出口开口向处理腔室将等离子体产物直接分布进处理腔室中，该多个出口开口实质在方位上分布于该等离子体腔的第一轴向侧周围。
附图说明
图1根据实施例示意性地描绘等离子体处理系统的主要构件。
图2根据实施例示意性地描绘直接出口环状等离子体源的所选构件。
图3根据实施例示意性地描绘直接出口环状等离子体源的所选构件。
图4根据实施例示意性地描绘直接出口环状等离子体源的所选构件。
图5根据实施例示意性地描绘直接出口环状等离子体源的所选构件。
图6是图5的直接出口环状等离子体源的示意性剖视图(在断线6-6处取得)。
图7是图5的直接出口环状等离子体源的示意性剖视图(在断线7-7处取得)。
图8根据实施例示意性地描绘具有等离子体腔的直接出口环状等离子体源，该等离子体腔通过在板附近安置等离子体阻挡件来限定。
图9根据实施例示意性地描绘具有等离子体腔的另一直接出口环状等离子体源，该等离子体腔通过在板附近安置等离子体阻挡件来限定。
图10根据实施例示意性地描绘直接出口环状等离子体源，图示了入口气体歧管，该入口气体歧管向其中的等离子体腔供应源气体。
图11是沿图10的线11-11的示意性剖视图。
图12根据实施例示意性地描绘直接出口环状等离子体源的具有用于引入源气体的内联气体注射端口的等离子体阻挡件。
图13根据实施例示意性地描绘直接出口环状等离子体源的具有用于引入源气体的多个内联气体注射端口的等离子体阻挡件。
图14根据实施例示意性地描绘直接出口环状等离子体源的等离子体阻挡件，图示了可如何相对于板的表面法线以多个角度限定出口孔，该板形成其一个轴向侧(axialside)。
图15A是根据实施例的示意性底视图，描绘了直接出口环状等离子体源，在该直接出口环状等离子体源中限定了四个出口孔。
图15B是根据实施例的示意性底视图，描绘了直接出口环状等离子体源，在该直接出口环状等离子体源中限定了超过六十个出口孔。
图16根据实施例以横截面视图示意性地描绘等离子体晶片处理系统，该等离子体晶片处理系统包括两个直接出口环状等离子体源。
图17A示意性地描绘图16的等离子体处理系统的顶面的面朝上的示意性平面图，其中两个直接环状等离子体源的底板特征是可见的。
图17B示意性地描绘图16的等离子体处理系统的扩散板的面朝上的示意性平面图。
图18根据实施例以横截面视图示意性地描绘等离子体晶片处理系统，该等离子体晶片处理系统包括两个直接出口环状等离子体源。
具体实施方式
可通过参考结合以下所述的附图进行的以下的详细说明来了解本公开，其中类似的参考标号在若干附图各处用以指类似的组件。注意的是，为了清楚说明的目的，附图中的某些要素可不按比例绘制。可通过使用括号中的标号来指示项目的特定实例(例如等离子体阻挡件210(1)、210(2)等等)，同时不具括号的标号指任何这样的项目(例如等离子体阻挡件210)。为了清楚说明，在示出多个项目实例的情况中，可以只有实例中的一些被标示。
图1根据实施例示意性地描绘等离子体处理系统100的主要构件。系统100被描绘为单一晶片、半导体晶片等离子体处理系统，但对于本领域技术人员而言将显而易见的是，本文中的技术及原理可施用于任何类型的等离子体产生系统(例如并不一定处理晶片或半导体的系统)。亦应了解的是，图1是简化图，仅示出了系统100的所选的、主要的构件；实际处理系统相较于系统100将因而看起来不同且很可能包含额外的构件。
处理系统100包括用于晶片接口115、用户接口120、等离子体处理单元130、控制器140及一或更多个电源150的壳体110。处理系统100由各种设施所支持，所述设施可包括气体(一或多种)155、电源170、真空160及可选的其他物。为了清楚说明，未示出处理系统100内的内部管道及电性连接。
处理系统100被描绘为所谓的间接(或远程)等离子体处理系统，其在第一位置处产生等离子体，且将等离子体和/或等离子体产物(例如离子、分子片断、自由基、经激励物种及类似物)引导至处理步骤发生的第二位置。因此，在图1中，等离子体处理单元130包括远程等离子体源132，该远程等离子体源132为处理腔室134供应等离子体和/或等离子体产物。处理腔室134包括一或更多个晶片基座135，晶片接口115在其上放置工件50以供处理。工件50例如是半导体晶片，但任何其他类型的工件亦可经受等离子体处理。操作时，气体(一或多种)155被引进等离子体源132，且射频产生器(RF Gen)165供应电力以点燃等离子体源132内的等离子体。等离子体和/或等离子体产物从等离子体源132传到处理腔室134，在该处理腔室134处，工件50被处理。通常现今的系统例如可通过喷嘴133和/或扩散板137来传输等离子体和/或等离子体产物，以试图均匀地散播及施用它们。实际的等离子体系统可提供许多其他可选特征或子系统，通过所述其他可选特征或子系统，等离子体、等离子体产物和/或载体或额外处理气体在等离子体源132及处理腔室134之间流动和/或混合。
描绘为系统100的部分的构件是通过示例的方式来列出的，且并非穷尽的。亦可包括许多其他可能的构件(例如：压力和/或流量控制器；气体或等离子体歧管或分布装置；离子抑制板；电极、磁心和/或其他电磁装置；机械、压力、温度、化学、光学和/或电子传感器；晶片或其他工件的处理机构；检视和/或其他存取端口；及类似物)，但为了清楚说明并未图示。影响处理腔室134中的状况的各种控制方案是可能的。例如，可通过监测处理腔室134中的压力及向上或向下调整所有气体流动直到所测量的压力是在所需压力的某公差内为止来维持压力。可通过增加加热器及温度传感器来控制温度。光学传感器可在等离子体产生时和/或在等离子体与工件相互作用时检测等离子体的发射峰。
还为了清楚说明而未示出系统100内所描绘的构件的内部连接及协作。除了RF产生器165及气体155以外，其他代表性设施(例如真空160和/或通用电源170)可与系统100连接。类似于系统100中所绘示的构件，绘示为与系统100连接的设施是旨在说明性而非穷尽的；其他类型的设施(例如加热或冷却流体、加压空气、网络能力、废料处理系统及类似物)亦可与系统100连接，但为了清楚说明而未图示。类似地，虽然以上说明提及的是，等离子体在远程等离子体源132内被点燃，但以下所讨论的原理可等效施用于所谓的“直接”等离子体系统，该系统在实际的工件处理位置中产生等离子体。
虽然间接等离子体处理系统被描绘于图1中及此公开的其他处，但对于本领域技术人员而言应是清楚的是，本文中所公开的技术、装置及方法亦可施用于直接等离子体处理系统(例如，等离子体是在工件(一或多个)的位置处点燃的情况)。类似地，在实施例中，可重新组织、重新分布和/或复制处理系统100的组件，例如：(1)以提供具有多个处理腔室的单一处理系统；(2)以对单一处理腔室提供多个远程等离子体源；(3)以在单一处理腔室内提供多个工件固定件(例如晶片基座135)；(4)以利用单一远程等离子体源来向多个处理腔室供应等离子体产物；和/或(5)以按串行/并行的组合提供等离子体及气体源，使得各种源气体可被活化(例如至少暂时作为等离子体的部分而存在)零、一、二或更多次，且在它们进入处理腔室之前或之后与其他源气体混合，及类似物。尚未是等离子体的部分的气体在本文中有时称为“未活化”气体。
图2根据实施例示意性地描绘直接出口环状等离子体源200的所选构件。等离子体源200是远程等离子体源132(图1)的示例。在本文中将用以描述图2中及其他处所示的特征的有用坐标系统将轴向位置定义为沿环轴1、将径向方向2定义为标示距环轴1的距离及将方位方向3定义为标示围绕环轴1的旋转方向。本文中所公开的等离子体源将被认为是限定了一环轴，该环轴经过等离子体源的形心(不一定穿过等离子体源的物理特征)，其中等离子体源的等离子体产生腔相对于环轴大致为环状、径向对称的，且在垂直于环轴的平面中围绕环轴延伸。环状构件的主要圆周21被限定为在其外边界处围绕环轴在方位上延伸，例如如针对以下的等离子体阻挡件210(1)所示的；为了清楚说明，在图2中，主要圆周21并不图示为一路延伸于等离子体阻挡件210(1)的周围。次要圆周在相对于环轴1的单一方位位置围绕构件(例如等离子体阻挡件210(1))延伸，例如如次要圆周22(图2)所示。
等离子体源200包括等离子体阻挡件210(1)、磁构件220(1)及电感线圈230。磁构件220(1)至少部分地围绕等离子体阻挡件210(1)延伸，且电感线圈230至少部分地围绕磁构件220(1)缠绕。虽然磁构件220(1)是以环状图示，但磁构件220不一定要是环状的、具有圆形横截面或完全围绕等离子体阻挡件210延伸。等离子体阻挡件210(1)可被抽空，且等离子体源气体可被引进等离子体阻挡件210(1)。在等离子体源气体在等离子体阻挡件210(1)内的情况下，电流通过电感线圈230，在磁构件220(1)内诱发磁通量，这反过来在等离子体阻挡件210(1)内诱发了电流，点燃了等离子体。
等离子体源200可因此被看作类似于变压器，其中一次电流流过电感线圈230且二次电流在等离子体阻挡件210(1)内流动。有益地，等离子体源200将二次电流约束在等离子体阻挡件210(1)内所点燃的气体和/或等离子体内，因此，有益地，等离子体阻挡件210(1)并不由限定完整方位电路的导体所形成。在某些实施例中，等离子体阻挡件210(1)由介电材料制造，然而，如以下所讨论的，铝通常是一种用以制作等离子体阻挡件210(1)的至少一部分的便利材料。当等离子体阻挡件210(1)由铝或另一实质导电的材料制作时，外场可被耦合进等离子体阻挡件210(1)，且可通过包括一或更多个介电断路器240来中断方位电路路径，所述介电断路器围绕等离子体阻挡件210(1)的次要圆周延伸。
等离子体阻挡件210(1)限定多个输出孔(于多个方位位置处，但是是在其单一轴向侧上)，等离子体产物通过所述输出孔而分布，以供用于等离子体处理中。例如，在图2中，输出孔是不可见的，但与出口250连接以在箭头所示的方向上分布等离子体产物。通过围绕等离子体阻挡件210(1)的一个轴向侧在多个方位位置处提供输出口，等离子体源200有益地提供出口250的圆形分布，使得其中所提供的等离子体产物距产生它们的等离子体是等距的。这允许直接将圆形图案的等离子体产物耦合至处理腔室，使得等离子体产物以圆形及空间上宽广的图案到达处理腔室，同时该图案的所有点距离等离子体实质上是等距的。
本文中的直接出口环状等离子体源实施例的一个优点在于跨宽广及圆形对称的图案提供等离子体产物，在该图案中，所有点距离等离子体实质上是等距的。这最小化了重组效应及壁效应上的差异，所述效应在其他情况下会在不同的位置处影响处理结果。虽然典型的电感等离子体系统可利用环状等离子体腔室来产生等离子体产物，但这样的系统通常通过单一端口或喷嘴来分布等离子体产物，该端口或喷嘴提供了从等离子体到工件上的各种位置的不同距离。
本文中的实施例的另一优点在于，在相对的高压产生等离子体而没有因为离子被高电场加速而造成的对内部表面的过量溅射损害的能力。本文中的实施例例如可操作在0.5托(Torr)或更少到100托或更多的压力状态下。其他类型的电感耦合等离子体源往往将等离子体阻挡件暴露于高电场，这样的场通常由位于等离子体阻挡件附近的电感线圈所引起。经历如此场的等离子体中的离子在场的方向上加速，往往撞击内部等离子体阻挡件壁且溅射其材料。溅射损害造成了降低的设备寿命和/或过量的维护需求，招致劳动及材料成本及工具停机时间。相较之下，除了沿环状等离子体腔的方向，本文中的设计最小化了等离子体阻挡件对于电场的暴露，使得由磁构件所操控的磁通量在等离子体本身内产生二次电流，而不引发会造成对等离子体阻挡件表面的溅射的电场。这反过来允许本文中的至少某些实施例使用主要由具有未处理表面的铝(与较昂贵的材料相反)或具有特殊处理表面的铝制作的等离子体阻挡件。受处理表面仍是个选项。
本文中的磁构件220通常由铁素体形成。电感线圈230通常由铜形成，可选地为了减少外表皮的电阻率而镀以银。磁构件220及电感线圈230两者及等离子体阻挡件210的某些区域或部分可包括用于冷却气体或流体的通道(如本文中进一步讨论的)，以移除由操作期间的电及磁损失所产生的热。如上所述，等离子体阻挡件210可由具有未处理表面或具有表面处理(例如阳极化，或氧化铝、氮化铝或氧化钇涂层)的铝来制造。其他材料选择亦是可能的，且可通过考虑成本、可加工性、导电性、热膨胀、散热特性及与所要的气体及等离子体产物的兼容性来作出所述材料选择。
图3示意性地描绘直接出口环状等离子体源300的所选构件。等离子体源300与等离子体源200(图2)共享许多相同构件，但包括等离子体阻挡件210(2)、具有各自的电感线圈230的两个磁构件220(1)。环轴1、径向方向2及方位方向3再次图示于图3中以供参考。为了对称及高效的等离子体产生，磁构件220(1)围绕等离子体阻挡件210(2)在方位上彼此相反地进行设置。此外，等离子体源300的等离子体阻挡件210(2)包括四个介电断路器240；两个介电断路器240位于磁构件220(1)附近，同时其他两个围绕等离子体阻挡件210(2)的圆周从磁构件220(1)以90度间隔进行设置。
图4示意性地描绘直接出口环状等离子体源400的所选构件。等离子体源400与等离子体源200及300共享许多相同构件，但包括两个磁构件220(2)，所述磁构件220(2)是U或马蹄形的而非环状的。使用U或马蹄形磁构件帮助利用直接出口环状等离子体源的某些构造，如以下所进一步描述的。
图5示意性地描绘直接出口环状等离子体源500的所选构件。为了清楚说明，环轴1、径向方向2及方位方向3并不再次图示于图5中，但仍如图2中般限定。等离子体源500与等离子体源200、300及400共享许多相同构件。等离子体阻挡件210(3)包括具有介电断路器240(其中的两者在图5的视图中被磁构件220(3)所隐藏)的金属区段245。等离子体阻挡件210(3)在轴向侧211(1)(被标示，但隐藏在图5的视图中)上是扁平的。等离子体阻挡件210(3)限定了区段245中的入口孔260。等离子体阻挡件210(3)还在轴向侧211(2)上限定了出口孔270，如所示的。图5中所示的入口孔260及出口孔270的位置及数量仅是说明性的；为了清楚说明，并非此类孔的所有实例皆被示出或标示。实际上，入口孔260可经安置以提供将均匀的源气体引入等离子体阻挡件210(3)，但可在其他情况下经布置以方便与等离子体源500的其他组件整合。出口孔270通常较图5中所示的更多，经布置以提供将均匀的等离子体产物分布至相邻的处理腔室，且可被限定于区段245或介电断路器240中(参照图6及7)。断线6-6及7-7表示分别取得图6及7中所示的剖面图的平面。
图6及7是分别于图5的断线6-6及7-7处所取得的直接出口环状等离子体源500的示意性剖视图。图6图示穿过介电断路器240(在图5的视图中隐藏在磁构件220(3)之下)中的一者所取得的剖面。环轴1及径向方向2再次图示于图6及7中以供参考；方位方向弯进或弯出图6及7的平面，从环轴1的左边到右边改变符号。某些出口孔270由等离子体阻挡件210(3)的轴向侧211(2)上的介电断路器240所限定，如所示的。还图示出等离子体腔280及形成于其中的等离子体299。图7图示穿过金属区段245中的一者而取得的剖面。某些出口孔270由等离子体阻挡件210(3)的轴向侧211(2)上的介电断路器240所限定，如所示的。还图示出等离子体腔280及形成于其中的等离子体299。
图6及7亦图示通过磁构件220(3)的冷却管275。冷却管275可提供气体或流体的流体连接，以移除由磁构件220(3)所耗散的热；对于本文中所述的任何磁构件，构想了提供冷却通道的特征，虽然为了清楚说明而在许多情况下不图示。类似地，冷却管可提供于电感线圈230和/或各种其他等离子体源组件中；为了清楚说明，在本文中图示及描述了某些这样的布置同时不图示及描述其他的布置。
图8示意性地描绘直接出口环状等离子体源600的部分，其中等离子体腔280通过在板610附近安置等离子体阻挡件210(4)来限定。环轴方向10及径向方向2再次图示于图8中以供参考。实际的环轴经过等离子体腔280的形心(在图8的视图外面)；方位方向弯进或弯出图8的平面。为了可制造性及维护的目的，提供由可容易加工及替换的组件所限定的等离子体腔可能是有益的。等离子体源600因此通过将等离子体阻挡件210(4)提供为相对简单的形状来限定等离子体腔280，具有将等离子体阻挡件210(4)密封至板610的能力，该板610在其中限定出口孔270。将等离子体阻挡件210(4)密封至板610的能力由板610中的沟槽615所提供，所述沟槽615接纳一或更多个O型环620。当等离子体腔280被抽空时，外部大气压将等离子体阻挡件210(4)对着O型环620推压(force)以形成密封。在图8中所示的实施例中，板610由介电材料形成。用于板610以及介电断路器240的合适材料包括陶瓷，特别是氮化铝或氧化铝，或熔凝石英。形成介电材料的板610允许等离子体阻挡件210(4)的介电断路器240中断方位电流，以便等离子体299可形成；也就是说，若板610由金属形成且电耦合至等离子体阻挡件210(4)，则由磁构件所诱发的电流仅会在因此而形成的方位电路周围快速移动，减少了将电场耦合进等离子体腔280。介电断路器240在本文中完全延伸于等离子体阻挡件210的次要圆周周围；在方位方向上，介电断路器240需要具有充足的宽度以抑制等离子体阻挡件210的邻近金属段产生电弧，例如约四分之一英寸到一英寸。
图9示意性地描绘直接出口环状等离子体源700，其具有通过在板710附近安置等离子体阻挡件210(5)来限定的等离子体腔280。环轴方向10及径向方向2再次图示于图9中以供参考；方位方向弯进及弯出图9的平面。板710由导体形成，且在其接触等离子体阻挡件210(5)的表面处包括介电阻挡层720。介电阻挡层720因此使等离子体阻挡件210(5)相对于形成板710的导体的短路现象失效，以中断在其他情况下会形成的方位电流。等离子体源700因此通过将等离子体阻挡件210(5)提供为相对简单的形状来限定等离子体腔280，具有将等离子体阻挡件210(5)密封至板710的能力，该板710在其中限定出口孔270。将等离子体阻挡件210(4)密封至板710的能力由等离子体阻挡件210(5)中的沟槽715所提供，所述沟槽715接纳一或更多个O型环620。当等离子体腔280被抽空时，外部大气压将板710对着O型环620推压以形成密封。图9中所描绘的设计允许等离子体阻挡件210(5)及板710被保持在不同电位；这允许控制通过输出孔270朝处理位置发射的等离子体产物内自由基对离子的比率。图9还图示冷却管775，该冷却管775提供板710的气体或流体冷却。冷却管775可被提供于本文中的其他组件(例如等离子体阻挡件、等离子体源或等离子体腔室的顶或底板、或等离子体腔室的侧壁)中。
图10示意性地描绘直接出口环状等离子体源800，图示了向其中的等离子体腔供应源气体的入口气体歧管810。径向方向2及方位方向3图示于图10中以供参考；环轴1延伸出图10的平面。图10中所描绘的顶视图在等离子体阻挡件210(6)的相对侧上图示磁构件220(3)，具有任一侧上的成对的气体歧管810。气体歧管810中的每一个通过一或更多个入口820接收源气体；虽然只有一个入口820描绘于图10中，但要了解的是，入口820可在数量及位置上改变。气体歧管810通过其中的孔将源气体分布进等离子体阻挡件210(6)，如现在讨论的。断线11-11指示等离子体源800的横截面，其更详细地描绘于图11中。
图11是沿图10的断线11-11的示意性剖视图，描绘直接出口环状等离子体源800。环轴1及径向方向2再次图示于图11中以供参考；方位方向弯进或弯出图11的平面，从环轴1的左边到右边改变符号。入口气流通过入口孔820被引进气体歧管810，接着通过由等离子体阻挡件210(6)所限定的孔830传进等离子体腔280。入口孔820在图11的视图中图示为垂直的(例如与环轴1平行)，但可以其他角度来限定以在等离子体腔280中促进混合或其他效果(亦参照图12及13)。气体歧管810可经建构以仅包含小的气体容积，以便源气体流(例如由上游阀或其他气体管理设备所引入的)中的改变快速地传进等离子体腔280。气体歧管810可包括压力传感器，以提供关于其中的压力的信息，从而促进对影响等离子体处理的因素的了解。气体歧管810的材料选择对于与其相关联的等离子体阻挡件210而言是相同的；例如金属(例如铝)(具有或不具经处理表面)、或电介质(例如氧化铝、氮化铝及其他陶瓷)是可能的选择。当气体歧管810及其相关联的等离子体阻挡件210皆由金属制作时，可能需要将气体歧管810与等离子体阻挡件210隔离和/或在气体歧管810中提供介电断路器，以避免完成方位电路，如以上所讨论的。
图12示意性地描绘直接出口环状等离子体源的等离子体阻挡件210(7)，该等离子体阻挡件210(7)具有内联气体入口孔850以供引入源气体。环轴1、径向方向2及方位方向3再次图示于图12中以供参考。内联气体入口孔850实质上与等离子体腔280方位对准，如所示的。通过气体入口孔850引入源气体流给予被注入气体以方位速度，从而促进在等离子体阻挡件210(7)内进行充分混合。在实施例中，内联气体入口孔850可被准确地方位对准，如图12中所示的，然而在其他实施例中，内联气体入口孔可仅被部分对准，例如在其与等离子体腔280相交处限定角度。以任何相对于环轴具有非零方位分量的角度经过内联气体入口孔850的源气体将在其被引入等离子体腔280时在气体中产生至少一些方位速度。
图13示意性地描绘直接出口环状等离子体源的具有多个内联气体入口孔850的等离子体阻挡件210(8)。环轴1、径向方向2及方位方向3再次图示于图13中以供参考。可以预期，可利用任何数量的内联气体入口孔850，且内联气体入口孔850可与处于其他角度的气体入口孔和/或与气体歧管810的变体结合使用，如图10及11中所示。
图14示意性地描绘直接出口环状等离子体源900的等离子体阻挡件210(9)，图示了出口孔270可如何相对于形成其一个轴向侧的板910的表面法线以多个角度920限定。环轴的方向10及径向方向2再次图示于图14中以供参考；方位方向弯进及弯出图14的平面。以多个角度形成出口孔270可帮助将等离子体产物广泛地分布进相邻等离子体处理装置中，以促进均匀的处理。
图15A是直接出口环状等离子体源1000的示意性底视图说明，其中限定了四个出口孔270。图15的视图示意性地描绘直接出口环状等离子体源1000的底板，其中该板的另一侧上的等离子体阻挡件的大概边界由断线所暗示。即使仅使用四个出口孔270，相较于仅从一个孔抽取输出的现有技术的远程等离子体源，等离子体源1000也可提供显著更均匀的处理。环轴1延伸进图15A及15B的平面中；径向方向2及方位方向3图示于图15A中以供参考，但为了清楚说明而在图15B中被省略。图15B是直接出口环状等离子体源1100的示意性底视图说明，其中限定了超过六十个出口孔270。图15B的视图示意性地描绘直接出口环状等离子体源1100的底板，其中该板的另一侧上的等离子体阻挡件的大概边界由断线所暗示。相对应等离子体阻挡件的几何形状及材料、磁构件及电感线圈的数量及放置可被优化，以在等离子体阻挡件内产生均匀的等离子体分布，使得通过出口孔270所抽取的等离子体产物在空间上跨等离子体源1100是均匀的。在实施例中，直接环状等离子体源可包括数百或数千个出口孔270。
图16以横截面视图示意性地描绘等离子体晶片处理系统1200，其包括两个直接出口环状等离子体源1201及1202。为了清楚说明，仅标示处理系统1200的代表组件，且图16不是按比例绘制的。环轴1及径向方向2再次图示于图16中以供参考；方位方向弯进或弯出图16的平面，从环轴1的左边到右边改变符号。等离子体晶片处理系统限定处理腔室1234，该处理腔室1234围绕环轴1径向对称；因此等离子体源1201可被视为外等离子体源，同时等离子体源1202可被视为内等离子体源，其中等离子体源1201及1202的环轴及等离子体腔室1234的对称轴皆重合。再次地，虽然图16是针对晶片处理的实施例，但了解的是，其他实施例可利用相同的原理以供处理其他工件。
等离子体晶片处理系统1200利用等离子体源1201及1202以产生等离子体产物，且被配置用于在等离子体产物从等离子体的位置移动至正被处理的工件50时将等离子体产物与未活化气体可选地混合。等离子体晶片处理系统1200限定处理腔室1234，在该处理腔室1234中，基座1235将工件50定位于处置位置处，如所示的。在腔室1234的顶面1232的顶上，等离子体源1201形成外环形，且等离子体源1202形成内环形。等离子体源1201及1202可在具有或不具有气体歧管(如图10及11中所示)的情况下从入口孔260或830接收源气体(如分别于图5及11中所示的)；这样的结构未示出于图16的视图中。等离子体源1201及1202中的每一个包括各自的等离子体阻挡件210(10)或210(11)，且利用电感线圈230及磁构件220(3)来从其中的源气体产生等离子体。等离子体源1201及1202共享共同的底板1210，该共同的底板1210限定孔270以供朝处理腔室1234分布等离子体产物。
底板1210中的孔270提供均匀的、轴向方向(例如在环轴的方向上)的及短的路径，以供从等离子体产物起源处的等离子体将等离子体产物分布至正被处理的工件50。两个等离子体源1201和1202的使用(其中等离子体源1201限定外环且等离子体源1202限定内环)在优化对工件50的处理的中心至边缘的均匀性方面提供了显著的自由度。可通过改变工艺参数(特别是等离子体源1201及1202的)并测量在系统1200中所处理的测试晶片和/或产品晶片上的效果来优化处理配方。可调整整体气体流及提供至等离子体源1201和/或1202的RF能量，直到效果跨所处理的每一个工件50是均匀的为止。在实施例中，等离子体源1201及1202相较于彼此可运行不同的反应气体比率，和/或相较于彼此可利用完全不同的源气体。
处理系统1200亦提供通过底板1210及顶面1232的气体入口1270，以供供应要与等离子体产物混合的未活化气体(亦参照图17A)。图16及17A中所示的孔270和/或气体入口1270的数量及分布只是表示性的，且可在实施例间变化。
为了易于组装部件及部件的可替换性，底板1210在实施例中与腔室1234的顶面1232分离(如所示的)。也就是说，等离子体源1201及1202可与底板1210组装，及安装为单一单元或从顶面1232移除为单一单元。然而，在实施例中，底板1210及顶面1232的特征可结合于单一板中。
图16亦图示可选的扩散板1237，该扩散板1237限定孔1247，以供等离子体产物前行进处理腔室1234。扩散板1237亦可包括一或更多个气体通道1239，以传导可与等离子体产物混合的未活化气体。例如，如图16中所示，气体通道1239与输出气体孔1241连接，输出气体孔1241限定于扩散板1237的面向腔室的一侧中(亦参照图17B)。图16及17B中所示的孔1247和/或输出气体孔1241的数量及分布仅为表示性的，且可在实施例间变化。
图17A示意性地描绘等离子体处理系统1200(图16)的顶面1232的面朝上的示意性平面图，其中直接环状等离子体源1201及1202的底板1210的特征是可见的。为了清楚说明，仅标示顶面1232及底板1210的代表性组件，且图17并非按比例绘制。环轴、径向及方位方向未图示于图17A及17B中，但可从其他附图中所示的那些方向确定。许多孔270提供从产生等离子体产物的等离子体到正被处理的工件的用于来自等离子体源1201及1202的等离子体产物的在长度上非常短且均匀的路径，跨腔室1234促进了均匀的处理。例如，在实施例中，从等离子体源1201和/或1202内的等离子体到工件50上的任何位置的路径可小于四英寸。提供与孔270穿插的气体入口1270允许将未活化气体与等离子体产物混合。某些实施例在等离子体产物及未活化气体从图17A中(也就是在不包括扩散器1237的处理系统1200中)所示的结构出现时，有益地以等离子体产物及未活化气体处理晶片。其他实施例可受益于由扩散板1237所提供的额外气体及等离子体产物的混合。
图17B示意性地描绘扩散器1237的面朝上的示意性平面图。为了清楚说明，仅标示扩散板1237的代表性特征，且图17B并非按比例绘制。孔1247(描绘为开口圆)一路延伸穿过扩散板1237，同时出口气体孔1241(描绘为点)仅延伸进扩散板1237的底面，在该处，从气体通道1239将未活化气体供应给出口气体孔1241。扩散器1237促进等离子体产物与未活化气体的进一步的混合及对等离子体产物对未活化气体的比率的良好控制，这对于某些等离子体处理可能是有益的，但对于其他等离子体处理可能是不必要的。
图18以横截面视图示意性地描绘等离子体晶片处理系统1300，其包括两个直接出口环状等离子体源1301及1302。再次地，虽然图18是针对晶片处理的实施例，了解的是，其他实施例可利用相同原理以供处理其他工件。处理系统1300的许多特征将被辨识为实质类似于先前所述的系统且不再次描述。环轴1及径向方向2再次图示于图18中以供参考；方位方向弯进或弯出图18的平面，从环轴1的左边到右边改变符号。等离子体晶片处理系统限定处理腔室1334，该处理腔室1334围绕环轴1径向对称；因此等离子体源1301可被视为外等离子体源，同时等离子体源1302可被视为内等离子体源，其中等离子体源1301及1302的环轴及等离子体腔室1334的对称轴皆重合。图18描绘等离子体阻挡件210(12)及210(13)的额外特征，等离子体阻挡件210(12)及210(13)与下层空间开放性流体连通，而不是受底板所约束。图18还描绘域分隔器1360。
类似于等离子体源1201及1202的各自的位置，等离子体源1301及1302在处理腔室1334顶上限定内及外环形。等离子体源1301及1302可在具有或不具有气体歧管810(如图10及11中所示)的情况下从入口孔260或830接收源气体(如分别于图5及11中所示的)；这样的结构未示出于图18的视图中。在处理腔室1334内，基座1335定位工件50以供处理。等离子体阻挡件210(12)和/或210(13)在其第一轴向侧上形成实质方位性连续的开口1370，也就是说，等离子体源1301及1302在第一轴向侧上实质上并不被约束，先前所讨论的等离子体源1201、1202及其他者亦是如此。开口1370在它们通过顶板1332在方位方向上显著延伸的方面而言可以是实质方位性连续的，然而，在此背景下，“实质方位性连续”并不排除中断开口1370以对于顶板1332的径向内部分提供机械支撑；与任一等离子体源的主要圆周的至少约75％相对应的开口会被视为是实质方位性连续的。此外，等离子体阻挡件210(12)及210(13)两者限定实质方位性连续的开口并不是关键的；在实施例中，等离子体阻挡件210(12)及210(13)中的一者限定实质方位性连续的开口同时另一者不限定。因此，等离子体源1301及1302的等离子体腔与在处理腔室1334的上部分中所形成的空间1355、1357流体连通，使得等离子体产物将通过开口1370传出等离子体阻挡件210(12)及210(13)而进入空间1355及1357。从空间1355、1357，等离子体产物通过扩散板1337传进处理腔室1334。
等离子体晶片处理系统1300当然可包括用于向等离子体源1301及1302供应源气体的供给件(provision)(例如结合图10-13所述的个别气体入口孔和/或气体歧管)及用于向等离子体产物增加进一步气体的供给件(例如图16、17A及17B中所描绘的气体入口1270和/或气体通道1239)。
等离子体阻挡件210(12)及210(13)的开口设计意味着，各等离子体阻挡件下的空间1355、1357中的每一个中的压力将实质由到相应等离子体阻挡件的输入气体流所决定。如果需要，可因此通过使用域分隔器1360来维持空间1355及1357的分离。域分隔器1360是圆形特征，该圆形特征围绕其完整圆周接触顶板1332及扩散板1337两者；图18的横截面图仅图示通过横截平面的域分隔器1360的两个部分。域分隔器1360通常由介电材料形成，且强制实行供应至处理腔室1334的中心区域及边缘区域的等离子体产物之间的分离。在实施例中，此分离可用以在处理腔室1334中单独控制中心及边缘处理效果，且因此用以优化工件50处的中心至边缘的处理均匀性。
用于向等离子体源1301及1302供应源气体的供给件可独立控制，以便处理腔室的中心区域及边缘区域处(例如大约对应于分别最受等离子体源1302及1301影响的那些区域)的处理效果可为了最佳的处理均匀性而被调整。对等离子体源1301及1302的源气体的独立可控性无论域分隔器1360是否存在都可以是有益的。
从前述说明，应清楚的是，一、二或更多个环状等离子体源可用以通过沿到处理腔室的短行进路径从等离子体源的轴向侧抽取等离子体产物来向处理腔室提供等离子体产物的均匀分布。多个环状等离子体源可经安置以具有构件，所述构件例如各自的等离子体阻挡件、等离子体阻挡件的介电断路器、磁构件、电感线圈、冷却装置、输出孔、入口气体歧管以及为了最佳的均匀性及到处理腔室的等离子体产物的最短传播路径而布置的其他相关联构件。
已描述若干实施例，将由本领域技术人员所辨识的是，可使用各种修改、替代结构及等效物而不脱离本发明的精神。此外，未描述许多熟知的处理及构件，以避免不必要地模糊了本发明。据此，不应将以上说明视为限制本发明的范围。
凡提供了值的范围，了解的是，亦具体公开了该范围的上及下限之间的各中间值(以下限单位的十分之一为单位，除非上下文另有清楚地指示)。包括任何经陈述的值或经陈述范围中的中间值和该经陈述范围中的任何其他经陈述或中间的值之间的每个较小范围。这些较小范围的上及下限可独立地被包括或排除于范围中，且该较小范围中包括任一限值、皆不包括限值或皆包括限值的各个范围亦包括在本发明中，受制于经陈述范围中的任何具体排除的限值。凡经陈述的范围包括限值中的一者或两者，则亦包括排除被包括的限值中的任一者或两者的范围。
如本文中及所附权利要求中所使用的，单数形式的“一个(a)”、“一个(an)”及“该(the)”包括了复数的指涉对象，除非上下文另有清楚指示。因此，例如，对于“一处理”的指称包括了多个这样的处理，且对于“该电极”的指称包括了对于一或更多个电极及其对本领域技术人员而言是熟知的等效物的指称，以此类推。并且，用字“包括(comprise)”、“包括(comprising)”、“包括(include)”、“包括(including)”及“包括(includes)”当用在此说明书中及以下权利要求中时，旨在指定所陈述特征、整数、组件或步骤的存在，但它们并不排除一或更多个其他特征、整数、组件、步骤、动作或群组的存在或增加。

Claims (15)

1.一种等离子体处理系统，包括：
处理腔室；及
等离子体源，所述等离子体源在等离子体腔中产生等离子体，
所述等离子体腔围绕环轴是实质径向对称的，
所述等离子体源在所述等离子体腔的第一轴向侧上限定多个出口孔，其中由所述等离子体所产生的等离子体产物在轴向方向上通过所述多个出口孔从所述等离子体腔朝所述处理腔室传递。
2.如权利要求1所述的等离子体处理系统，其中所述等离子体源包括等离子体产生阻挡件及平面板，所述平面板在所述第一轴向侧上邻接所述等离子体产生阻挡件，所述等离子体产生阻挡件及所述平面板实质围住所述等离子体腔，所述平面板限定所述多个出口孔。
3.如权利要求2所述的等离子体处理系统，所述等离子体源进一步包括电感线圈及磁心构件，
所述电感线圈至少部分地围绕所述磁心构件缠绕，且
所述磁心构件被安置于所述等离子体产生阻挡件附近，
使得所述电感线圈中的电流在所述磁心构件中诱发磁通量，且所述磁心构件中的所述磁通量在所述等离子体腔内诱发方位电流以产生所述等离子体。
4.如权利要求3所述的等离子体处理系统，所述平面板包括介电材料，所述等离子体腔包括铝，且包括多个介电断路器，所述多个介电断路器中断由所述磁通量所诱发的方位电流。
5.如权利要求1所述的等离子体处理系统，所述处理腔室围绕所述环轴是实质径向对称的，所述多个出口孔相对于所述环轴是对称地布置的，使得所述等离子体产物从所述等离子体腔朝所述处理腔室跨所述径向方向均匀地分布。
6.如权利要求1所述的等离子体处理系统，进一步包括扩散板，所述扩散板限定穿过所述扩散板的多个孔，所述扩散板安置于所述等离子体源及所述处理腔室之间，其中所述扩散板限定一或更多个气体通道，所述一或更多个气体通道向面向所述处理腔室的所述扩散板的一侧传导未活化气体。
7.一种等离子体处理系统，包括：
处理腔室，所述处理腔室围绕腔室轴是实质径向对称的；
外等离子体源，所述外等离子体源在外等离子体腔中产生第一等离子体，
所述外等离子体腔围绕环轴是径向对称的，所述环轴与所述腔室轴重合，
所述外等离子体腔沿所述外等离子体源的第一轴向侧通过外出口开口与所述处理腔室流体连通，使得由所述第一等离子体所产生的等离子体产物在轴向方向上通过所述外出口开口从所述外等离子体腔朝所述处理腔室传递；及
内等离子体源，所述内等离子体源在内等离子体腔中产生第二等离子体，
所述内等离子体腔围绕所述环轴是径向对称的，所述环轴与所述腔室轴重合，且所述内等离子体腔是自所述外等离子体腔径向朝内的，
所述内等离子体腔沿所述内等离子体源的第一轴向侧通过内出口开口与所述处理腔室流体连通，使得由所述第二等离子体所产生的等离子体产物在所述轴向方向上通过所述内出口开口从所述内等离子体腔朝所述处理腔室传递。
8.如权利要求7所述的等离子体处理系统，其中所述外出口开口及所述内出口开口中的至少一者是实质在方位上连续的。
9.如权利要求7所述的等离子体处理系统，其中所述内出口开口及所述外出口开口被限定于所述等离子体腔室的外板中，所述处理系统进一步包括扩散板，所述扩散板安置于所述外板与所述等离子体腔室内的处理位置之间。
10.如权利要求9所述的等离子体处理系统，进一步包括圆形域分隔器，所述圆形域分隔器被径向安置于所述内等离子体源与所述外等离子体源之间，所述域分隔器在所述域分隔器的圆周周围与所述等离子体腔室的所述外板及所述扩散板两者连续接触。
11.如权利要求7所述的等离子体处理系统，其中供应至所述内及外等离子体源的源气体是能独立控制的，以调整发生于所述处理腔室的中心区域及边缘区域处的处理效果。
12.一种等离子体处理的方法，包括以下步骤：
将源气体引入实质环状的等离子体腔中，所述实质环状的等离子体腔限定环轴；
在所述等离子体腔内诱发方位电场，以从所述源气体产生等离子体，从而形成等离子体产物；及
通过多个出口开口向处理腔室将所述等离子体产物直接分布进处理腔室中，所述多个出口开口实质在方位上分布于所述等离子体腔的第一轴向侧周围。
13.如权利要求12所述的方法，其中提供所述方位电场的步骤包括以下步骤：在电感线圈中提供电流以在安置于所述等离子体腔附近的磁构件中诱发磁通量，使得所述磁心构件中的所述磁通量诱发所述方位电场。
14.如权利要求12所述的方法，进一步包括以下步骤：将一或更多种未活化气体与所述等离子体产物混合。
15.如权利要求14所述的方法，其中将所述一或更多种未活化气体与所述等离子体产物混合的步骤包括以下步骤：通过孔传递所述等离子体产物，所述孔穿过扩散板而形成，及通过所述扩散板中的气体通道供应所述一或更多种未活化气体。
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