CN107004561A - 具有直接出口环状等离子体源的等离子体处理系统 - Google Patents
具有直接出口环状等离子体源的等离子体处理系统 Download PDFInfo
- Publication number
- CN107004561A CN107004561A CN201580066116.8A CN201580066116A CN107004561A CN 107004561 A CN107004561 A CN 107004561A CN 201580066116 A CN201580066116 A CN 201580066116A CN 107004561 A CN107004561 A CN 107004561A
- Authority
- CN
- China
- Prior art keywords
- plasma
- chamber
- source
- processing chamber
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 43
- 230000008569 process Effects 0.000 title claims abstract description 32
- 238000012545 processing Methods 0.000 claims abstract description 102
- 238000003851 corona treatment Methods 0.000 claims abstract description 9
- 239000007789 gas Substances 0.000 claims description 111
- 239000012530 fluid Substances 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 230000000694 effects Effects 0.000 claims description 8
- 239000004411 aluminium Substances 0.000 claims description 7
- 230000005684 electric field Effects 0.000 claims description 7
- 230000004907 flux Effects 0.000 claims description 7
- 238000004891 communication Methods 0.000 claims description 5
- 239000003989 dielectric material Substances 0.000 claims description 5
- 238000011282 treatment Methods 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims 1
- 210000002381 plasma Anatomy 0.000 description 369
- 230000004888 barrier function Effects 0.000 description 75
- 150000002500 ions Chemical class 0.000 description 12
- 239000000463 material Substances 0.000 description 10
- 238000001816 cooling Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 235000012489 doughnuts Nutrition 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910017083 AlN Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 210000000952 spleen Anatomy 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 210000000003 hoof Anatomy 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000010076 replication Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Abstract
等离子体处理系统包括处理腔室及等离子体源,该等离子体源在等离子体腔中产生等离子体。该等离子体腔围绕环轴是实质对称的。该等离子体源在该等离子体腔的第一轴向侧上限定多个出口孔。由该等离子体所产生的等离子体产物在轴向方向上通过该多个出口孔从该等离子体腔朝该处理腔室传递。一种等离子体处理的方法,包括以下步骤:在实质环状的等离子体腔内产生等离子体以形成等离子体产物,该实质环状的等离子体腔限定环轴,及通过多个出口开口向处理腔室将等离子体产物直接分布进处理腔室中,该多个出口开口实质在方位上分布于该等离子体腔的第一轴向侧周围。
Description
技术领域
本公开广泛地应用于等离子体处理设备的领域。更具体而言,公开了用于提供空间上均匀的等离子体产物的系统及方法。
背景技术
半导体处理通常利用等离子体处理来在半导体晶片上蚀刻、清洁或沉积材料。所有这样的处理在受处理晶片的整个表面上有利地是高度均匀的。在这几年,显著地,在特征尺寸已减小的同时晶片尺寸已增加,以致于每个受处理晶片可收获更多的集成电路。典型的晶片直径从1970年代的约2或3英寸增加到2010年代的12英寸或更大。在同一时间框架下,商用集成电路的典型最小特征尺寸从约5微米减小到约0.015微米。在晶片生长得更大的同时处理较小的特征需要处理均匀性上的显著改进。晶片以外的工件的等离子体处理亦可受益于改进的处理均匀性。
发明内容
在实施例中,一种等离子体处理系统包括处理腔室及等离子体源,该等离子体源在等离子体腔中产生等离子体。该等离子体腔围绕环轴是实质对称的。该等离子体源在该等离子体腔的第一轴向侧上限定多个出口孔。由该等离子体所产生的等离子体产物在轴向方向上通过该多个出口孔从该等离子体腔朝该处理腔室传递。
在实施例中,一种等离子体处理系统包括:处理腔室,围绕腔室轴是实质径向对称的;外等离子体源,在外等离子体腔中产生第一等离子体;及内等离子体源,在内等离子体腔中产生第二等离子体。该外等离子体腔及该内等离子体腔围绕环轴是径向对称的,该环轴与该腔室轴重合。该内等离子体腔是自该外等离子体腔径向朝内的。该外及内等离子体腔沿该外等离子体源的第一轴向侧通过相应的外及内出口开口与该处理腔室流体连通,使得由该第一等离子体所产生的等离子体产物在轴向方向上通过该外及内出口开口从该外及内等离子体腔朝该处理腔室传递。
在实施例中,一种等离子体处理的方法包括以下步骤:在实质环状的等离子体腔内产生等离子体以形成等离子体产物,该实质环状的等离子体腔限定环轴,及通过多个出口开口向处理腔室将等离子体产物直接分布进处理腔室中,该多个出口开口实质在方位上分布于该等离子体腔的第一轴向侧周围。
附图说明
图1根据实施例示意性地描绘等离子体处理系统的主要构件。
图2根据实施例示意性地描绘直接出口环状等离子体源的所选构件。
图3根据实施例示意性地描绘直接出口环状等离子体源的所选构件。
图4根据实施例示意性地描绘直接出口环状等离子体源的所选构件。
图5根据实施例示意性地描绘直接出口环状等离子体源的所选构件。
图6是图5的直接出口环状等离子体源的示意性剖视图(在断线6-6处取得)。
图7是图5的直接出口环状等离子体源的示意性剖视图(在断线7-7处取得)。
图8根据实施例示意性地描绘具有等离子体腔的直接出口环状等离子体源,该等离子体腔通过在板附近安置等离子体阻挡件来限定。
图9根据实施例示意性地描绘具有等离子体腔的另一直接出口环状等离子体源,该等离子体腔通过在板附近安置等离子体阻挡件来限定。
图10根据实施例示意性地描绘直接出口环状等离子体源,图示了入口气体歧管,该入口气体歧管向其中的等离子体腔供应源气体。
图11是沿图10的线11-11的示意性剖视图。
图12根据实施例示意性地描绘直接出口环状等离子体源的具有用于引入源气体的内联气体注射端口的等离子体阻挡件。
图13根据实施例示意性地描绘直接出口环状等离子体源的具有用于引入源气体的多个内联气体注射端口的等离子体阻挡件。
图14根据实施例示意性地描绘直接出口环状等离子体源的等离子体阻挡件,图示了可如何相对于板的表面法线以多个角度限定出口孔,该板形成其一个轴向侧(axialside)。
图15A是根据实施例的示意性底视图,描绘了直接出口环状等离子体源,在该直接出口环状等离子体源中限定了四个出口孔。
图15B是根据实施例的示意性底视图,描绘了直接出口环状等离子体源,在该直接出口环状等离子体源中限定了超过六十个出口孔。
图16根据实施例以横截面视图示意性地描绘等离子体晶片处理系统,该等离子体晶片处理系统包括两个直接出口环状等离子体源。
图17A示意性地描绘图16的等离子体处理系统的顶面的面朝上的示意性平面图,其中两个直接环状等离子体源的底板特征是可见的。
图17B示意性地描绘图16的等离子体处理系统的扩散板的面朝上的示意性平面图。
图18根据实施例以横截面视图示意性地描绘等离子体晶片处理系统,该等离子体晶片处理系统包括两个直接出口环状等离子体源。
具体实施方式
可通过参考结合以下所述的附图进行的以下的详细说明来了解本公开,其中类似的参考标号在若干附图各处用以指类似的组件。注意的是,为了清楚说明的目的,附图中的某些要素可不按比例绘制。可通过使用括号中的标号来指示项目的特定实例(例如等离子体阻挡件210(1)、210(2)等等),同时不具括号的标号指任何这样的项目(例如等离子体阻挡件210)。为了清楚说明,在示出多个项目实例的情况中,可以只有实例中的一些被标示。
图1根据实施例示意性地描绘等离子体处理系统100的主要构件。系统100被描绘为单一晶片、半导体晶片等离子体处理系统,但对于本领域技术人员而言将显而易见的是,本文中的技术及原理可施用于任何类型的等离子体产生系统(例如并不一定处理晶片或半导体的系统)。亦应了解的是,图1是简化图,仅示出了系统100的所选的、主要的构件;实际处理系统相较于系统100将因而看起来不同且很可能包含额外的构件。
处理系统100包括用于晶片接口115、用户接口120、等离子体处理单元130、控制器140及一或更多个电源150的壳体110。处理系统100由各种设施所支持,所述设施可包括气体(一或多种)155、电源170、真空160及可选的其他物。为了清楚说明,未示出处理系统100内的内部管道及电性连接。
处理系统100被描绘为所谓的间接(或远程)等离子体处理系统,其在第一位置处产生等离子体,且将等离子体和/或等离子体产物(例如离子、分子片断、自由基、经激励物种及类似物)引导至处理步骤发生的第二位置。因此,在图1中,等离子体处理单元130包括远程等离子体源132,该远程等离子体源132为处理腔室134供应等离子体和/或等离子体产物。处理腔室134包括一或更多个晶片基座135,晶片接口115在其上放置工件50以供处理。工件50例如是半导体晶片,但任何其他类型的工件亦可经受等离子体处理。操作时,气体(一或多种)155被引进等离子体源132,且射频产生器(RF Gen)165供应电力以点燃等离子体源132内的等离子体。等离子体和/或等离子体产物从等离子体源132传到处理腔室134,在该处理腔室134处,工件50被处理。通常现今的系统例如可通过喷嘴133和/或扩散板137来传输等离子体和/或等离子体产物,以试图均匀地散播及施用它们。实际的等离子体系统可提供许多其他可选特征或子系统,通过所述其他可选特征或子系统,等离子体、等离子体产物和/或载体或额外处理气体在等离子体源132及处理腔室134之间流动和/或混合。
描绘为系统100的部分的构件是通过示例的方式来列出的,且并非穷尽的。亦可包括许多其他可能的构件(例如:压力和/或流量控制器;气体或等离子体歧管或分布装置;离子抑制板;电极、磁心和/或其他电磁装置;机械、压力、温度、化学、光学和/或电子传感器;晶片或其他工件的处理机构;检视和/或其他存取端口;及类似物),但为了清楚说明并未图示。影响处理腔室134中的状况的各种控制方案是可能的。例如,可通过监测处理腔室134中的压力及向上或向下调整所有气体流动直到所测量的压力是在所需压力的某公差内为止来维持压力。可通过增加加热器及温度传感器来控制温度。光学传感器可在等离子体产生时和/或在等离子体与工件相互作用时检测等离子体的发射峰。
还为了清楚说明而未示出系统100内所描绘的构件的内部连接及协作。除了RF产生器165及气体155以外,其他代表性设施(例如真空160和/或通用电源170)可与系统100连接。类似于系统100中所绘示的构件,绘示为与系统100连接的设施是旨在说明性而非穷尽的;其他类型的设施(例如加热或冷却流体、加压空气、网络能力、废料处理系统及类似物)亦可与系统100连接,但为了清楚说明而未图示。类似地,虽然以上说明提及的是,等离子体在远程等离子体源132内被点燃,但以下所讨论的原理可等效施用于所谓的“直接”等离子体系统,该系统在实际的工件处理位置中产生等离子体。
虽然间接等离子体处理系统被描绘于图1中及此公开的其他处,但对于本领域技术人员而言应是清楚的是,本文中所公开的技术、装置及方法亦可施用于直接等离子体处理系统(例如,等离子体是在工件(一或多个)的位置处点燃的情况)。类似地,在实施例中,可重新组织、重新分布和/或复制处理系统100的组件,例如:(1)以提供具有多个处理腔室的单一处理系统;(2)以对单一处理腔室提供多个远程等离子体源;(3)以在单一处理腔室内提供多个工件固定件(例如晶片基座135);(4)以利用单一远程等离子体源来向多个处理腔室供应等离子体产物;和/或(5)以按串行/并行的组合提供等离子体及气体源,使得各种源气体可被活化(例如至少暂时作为等离子体的部分而存在)零、一、二或更多次,且在它们进入处理腔室之前或之后与其他源气体混合,及类似物。尚未是等离子体的部分的气体在本文中有时称为“未活化”气体。
图2根据实施例示意性地描绘直接出口环状等离子体源200的所选构件。等离子体源200是远程等离子体源132(图1)的示例。在本文中将用以描述图2中及其他处所示的特征的有用坐标系统将轴向位置定义为沿环轴1、将径向方向2定义为标示距环轴1的距离及将方位方向3定义为标示围绕环轴1的旋转方向。本文中所公开的等离子体源将被认为是限定了一环轴,该环轴经过等离子体源的形心(不一定穿过等离子体源的物理特征),其中等离子体源的等离子体产生腔相对于环轴大致为环状、径向对称的,且在垂直于环轴的平面中围绕环轴延伸。环状构件的主要圆周21被限定为在其外边界处围绕环轴在方位上延伸,例如如针对以下的等离子体阻挡件210(1)所示的;为了清楚说明,在图2中,主要圆周21并不图示为一路延伸于等离子体阻挡件210(1)的周围。次要圆周在相对于环轴1的单一方位位置围绕构件(例如等离子体阻挡件210(1))延伸,例如如次要圆周22(图2)所示。
等离子体源200包括等离子体阻挡件210(1)、磁构件220(1)及电感线圈230。磁构件220(1)至少部分地围绕等离子体阻挡件210(1)延伸,且电感线圈230至少部分地围绕磁构件220(1)缠绕。虽然磁构件220(1)是以环状图示,但磁构件220不一定要是环状的、具有圆形横截面或完全围绕等离子体阻挡件210延伸。等离子体阻挡件210(1)可被抽空,且等离子体源气体可被引进等离子体阻挡件210(1)。在等离子体源气体在等离子体阻挡件210(1)内的情况下,电流通过电感线圈230,在磁构件220(1)内诱发磁通量,这反过来在等离子体阻挡件210(1)内诱发了电流,点燃了等离子体。
等离子体源200可因此被看作类似于变压器,其中一次电流流过电感线圈230且二次电流在等离子体阻挡件210(1)内流动。有益地,等离子体源200将二次电流约束在等离子体阻挡件210(1)内所点燃的气体和/或等离子体内,因此,有益地,等离子体阻挡件210(1)并不由限定完整方位电路的导体所形成。在某些实施例中,等离子体阻挡件210(1)由介电材料制造,然而,如以下所讨论的,铝通常是一种用以制作等离子体阻挡件210(1)的至少一部分的便利材料。当等离子体阻挡件210(1)由铝或另一实质导电的材料制作时,外场可被耦合进等离子体阻挡件210(1),且可通过包括一或更多个介电断路器240来中断方位电路路径,所述介电断路器围绕等离子体阻挡件210(1)的次要圆周延伸。
等离子体阻挡件210(1)限定多个输出孔(于多个方位位置处,但是是在其单一轴向侧上),等离子体产物通过所述输出孔而分布,以供用于等离子体处理中。例如,在图2中,输出孔是不可见的,但与出口250连接以在箭头所示的方向上分布等离子体产物。通过围绕等离子体阻挡件210(1)的一个轴向侧在多个方位位置处提供输出口,等离子体源200有益地提供出口250的圆形分布,使得其中所提供的等离子体产物距产生它们的等离子体是等距的。这允许直接将圆形图案的等离子体产物耦合至处理腔室,使得等离子体产物以圆形及空间上宽广的图案到达处理腔室,同时该图案的所有点距离等离子体实质上是等距的。
本文中的直接出口环状等离子体源实施例的一个优点在于跨宽广及圆形对称的图案提供等离子体产物,在该图案中,所有点距离等离子体实质上是等距的。这最小化了重组效应及壁效应上的差异,所述效应在其他情况下会在不同的位置处影响处理结果。虽然典型的电感等离子体系统可利用环状等离子体腔室来产生等离子体产物,但这样的系统通常通过单一端口或喷嘴来分布等离子体产物,该端口或喷嘴提供了从等离子体到工件上的各种位置的不同距离。
本文中的实施例的另一优点在于,在相对的高压产生等离子体而没有因为离子被高电场加速而造成的对内部表面的过量溅射损害的能力。本文中的实施例例如可操作在0.5托(Torr)或更少到100托或更多的压力状态下。其他类型的电感耦合等离子体源往往将等离子体阻挡件暴露于高电场,这样的场通常由位于等离子体阻挡件附近的电感线圈所引起。经历如此场的等离子体中的离子在场的方向上加速,往往撞击内部等离子体阻挡件壁且溅射其材料。溅射损害造成了降低的设备寿命和/或过量的维护需求,招致劳动及材料成本及工具停机时间。相较之下,除了沿环状等离子体腔的方向,本文中的设计最小化了等离子体阻挡件对于电场的暴露,使得由磁构件所操控的磁通量在等离子体本身内产生二次电流,而不引发会造成对等离子体阻挡件表面的溅射的电场。这反过来允许本文中的至少某些实施例使用主要由具有未处理表面的铝(与较昂贵的材料相反)或具有特殊处理表面的铝制作的等离子体阻挡件。受处理表面仍是个选项。
本文中的磁构件220通常由铁素体形成。电感线圈230通常由铜形成,可选地为了减少外表皮的电阻率而镀以银。磁构件220及电感线圈230两者及等离子体阻挡件210的某些区域或部分可包括用于冷却气体或流体的通道(如本文中进一步讨论的),以移除由操作期间的电及磁损失所产生的热。如上所述,等离子体阻挡件210可由具有未处理表面或具有表面处理(例如阳极化,或氧化铝、氮化铝或氧化钇涂层)的铝来制造。其他材料选择亦是可能的,且可通过考虑成本、可加工性、导电性、热膨胀、散热特性及与所要的气体及等离子体产物的兼容性来作出所述材料选择。
图3示意性地描绘直接出口环状等离子体源300的所选构件。等离子体源300与等离子体源200(图2)共享许多相同构件,但包括等离子体阻挡件210(2)、具有各自的电感线圈230的两个磁构件220(1)。环轴1、径向方向2及方位方向3再次图示于图3中以供参考。为了对称及高效的等离子体产生,磁构件220(1)围绕等离子体阻挡件210(2)在方位上彼此相反地进行设置。此外,等离子体源300的等离子体阻挡件210(2)包括四个介电断路器240;两个介电断路器240位于磁构件220(1)附近,同时其他两个围绕等离子体阻挡件210(2)的圆周从磁构件220(1)以90度间隔进行设置。
图4示意性地描绘直接出口环状等离子体源400的所选构件。等离子体源400与等离子体源200及300共享许多相同构件,但包括两个磁构件220(2),所述磁构件220(2)是U或马蹄形的而非环状的。使用U或马蹄形磁构件帮助利用直接出口环状等离子体源的某些构造,如以下所进一步描述的。
图5示意性地描绘直接出口环状等离子体源500的所选构件。为了清楚说明,环轴1、径向方向2及方位方向3并不再次图示于图5中,但仍如图2中般限定。等离子体源500与等离子体源200、300及400共享许多相同构件。等离子体阻挡件210(3)包括具有介电断路器240(其中的两者在图5的视图中被磁构件220(3)所隐藏)的金属区段245。等离子体阻挡件210(3)在轴向侧211(1)(被标示,但隐藏在图5的视图中)上是扁平的。等离子体阻挡件210(3)限定了区段245中的入口孔260。等离子体阻挡件210(3)还在轴向侧211(2)上限定了出口孔270,如所示的。图5中所示的入口孔260及出口孔270的位置及数量仅是说明性的;为了清楚说明,并非此类孔的所有实例皆被示出或标示。实际上,入口孔260可经安置以提供将均匀的源气体引入等离子体阻挡件210(3),但可在其他情况下经布置以方便与等离子体源500的其他组件整合。出口孔270通常较图5中所示的更多,经布置以提供将均匀的等离子体产物分布至相邻的处理腔室,且可被限定于区段245或介电断路器240中(参照图6及7)。断线6-6及7-7表示分别取得图6及7中所示的剖面图的平面。
图6及7是分别于图5的断线6-6及7-7处所取得的直接出口环状等离子体源500的示意性剖视图。图6图示穿过介电断路器240(在图5的视图中隐藏在磁构件220(3)之下)中的一者所取得的剖面。环轴1及径向方向2再次图示于图6及7中以供参考;方位方向弯进或弯出图6及7的平面,从环轴1的左边到右边改变符号。某些出口孔270由等离子体阻挡件210(3)的轴向侧211(2)上的介电断路器240所限定,如所示的。还图示出等离子体腔280及形成于其中的等离子体299。图7图示穿过金属区段245中的一者而取得的剖面。某些出口孔270由等离子体阻挡件210(3)的轴向侧211(2)上的介电断路器240所限定,如所示的。还图示出等离子体腔280及形成于其中的等离子体299。
图6及7亦图示通过磁构件220(3)的冷却管275。冷却管275可提供气体或流体的流体连接,以移除由磁构件220(3)所耗散的热;对于本文中所述的任何磁构件,构想了提供冷却通道的特征,虽然为了清楚说明而在许多情况下不图示。类似地,冷却管可提供于电感线圈230和/或各种其他等离子体源组件中;为了清楚说明,在本文中图示及描述了某些这样的布置同时不图示及描述其他的布置。
图8示意性地描绘直接出口环状等离子体源600的部分,其中等离子体腔280通过在板610附近安置等离子体阻挡件210(4)来限定。环轴方向10及径向方向2再次图示于图8中以供参考。实际的环轴经过等离子体腔280的形心(在图8的视图外面);方位方向弯进或弯出图8的平面。为了可制造性及维护的目的,提供由可容易加工及替换的组件所限定的等离子体腔可能是有益的。等离子体源600因此通过将等离子体阻挡件210(4)提供为相对简单的形状来限定等离子体腔280,具有将等离子体阻挡件210(4)密封至板610的能力,该板610在其中限定出口孔270。将等离子体阻挡件210(4)密封至板610的能力由板610中的沟槽615所提供,所述沟槽615接纳一或更多个O型环620。当等离子体腔280被抽空时,外部大气压将等离子体阻挡件210(4)对着O型环620推压(force)以形成密封。在图8中所示的实施例中,板610由介电材料形成。用于板610以及介电断路器240的合适材料包括陶瓷,特别是氮化铝或氧化铝,或熔凝石英。形成介电材料的板610允许等离子体阻挡件210(4)的介电断路器240中断方位电流,以便等离子体299可形成;也就是说,若板610由金属形成且电耦合至等离子体阻挡件210(4),则由磁构件所诱发的电流仅会在因此而形成的方位电路周围快速移动,减少了将电场耦合进等离子体腔280。介电断路器240在本文中完全延伸于等离子体阻挡件210的次要圆周周围;在方位方向上,介电断路器240需要具有充足的宽度以抑制等离子体阻挡件210的邻近金属段产生电弧,例如约四分之一英寸到一英寸。
图9示意性地描绘直接出口环状等离子体源700,其具有通过在板710附近安置等离子体阻挡件210(5)来限定的等离子体腔280。环轴方向10及径向方向2再次图示于图9中以供参考;方位方向弯进及弯出图9的平面。板710由导体形成,且在其接触等离子体阻挡件210(5)的表面处包括介电阻挡层720。介电阻挡层720因此使等离子体阻挡件210(5)相对于形成板710的导体的短路现象失效,以中断在其他情况下会形成的方位电流。等离子体源700因此通过将等离子体阻挡件210(5)提供为相对简单的形状来限定等离子体腔280,具有将等离子体阻挡件210(5)密封至板710的能力,该板710在其中限定出口孔270。将等离子体阻挡件210(4)密封至板710的能力由等离子体阻挡件210(5)中的沟槽715所提供,所述沟槽715接纳一或更多个O型环620。当等离子体腔280被抽空时,外部大气压将板710对着O型环620推压以形成密封。图9中所描绘的设计允许等离子体阻挡件210(5)及板710被保持在不同电位;这允许控制通过输出孔270朝处理位置发射的等离子体产物内自由基对离子的比率。图9还图示冷却管775,该冷却管775提供板710的气体或流体冷却。冷却管775可被提供于本文中的其他组件(例如等离子体阻挡件、等离子体源或等离子体腔室的顶或底板、或等离子体腔室的侧壁)中。
图10示意性地描绘直接出口环状等离子体源800,图示了向其中的等离子体腔供应源气体的入口气体歧管810。径向方向2及方位方向3图示于图10中以供参考;环轴1延伸出图10的平面。图10中所描绘的顶视图在等离子体阻挡件210(6)的相对侧上图示磁构件220(3),具有任一侧上的成对的气体歧管810。气体歧管810中的每一个通过一或更多个入口820接收源气体;虽然只有一个入口820描绘于图10中,但要了解的是,入口820可在数量及位置上改变。气体歧管810通过其中的孔将源气体分布进等离子体阻挡件210(6),如现在讨论的。断线11-11指示等离子体源800的横截面,其更详细地描绘于图11中。
图11是沿图10的断线11-11的示意性剖视图,描绘直接出口环状等离子体源800。环轴1及径向方向2再次图示于图11中以供参考;方位方向弯进或弯出图11的平面,从环轴1的左边到右边改变符号。入口气流通过入口孔820被引进气体歧管810,接着通过由等离子体阻挡件210(6)所限定的孔830传进等离子体腔280。入口孔820在图11的视图中图示为垂直的(例如与环轴1平行),但可以其他角度来限定以在等离子体腔280中促进混合或其他效果(亦参照图12及13)。气体歧管810可经建构以仅包含小的气体容积,以便源气体流(例如由上游阀或其他气体管理设备所引入的)中的改变快速地传进等离子体腔280。气体歧管810可包括压力传感器,以提供关于其中的压力的信息,从而促进对影响等离子体处理的因素的了解。气体歧管810的材料选择对于与其相关联的等离子体阻挡件210而言是相同的;例如金属(例如铝)(具有或不具经处理表面)、或电介质(例如氧化铝、氮化铝及其他陶瓷)是可能的选择。当气体歧管810及其相关联的等离子体阻挡件210皆由金属制作时,可能需要将气体歧管810与等离子体阻挡件210隔离和/或在气体歧管810中提供介电断路器,以避免完成方位电路,如以上所讨论的。
图12示意性地描绘直接出口环状等离子体源的等离子体阻挡件210(7),该等离子体阻挡件210(7)具有内联气体入口孔850以供引入源气体。环轴1、径向方向2及方位方向3再次图示于图12中以供参考。内联气体入口孔850实质上与等离子体腔280方位对准,如所示的。通过气体入口孔850引入源气体流给予被注入气体以方位速度,从而促进在等离子体阻挡件210(7)内进行充分混合。在实施例中,内联气体入口孔850可被准确地方位对准,如图12中所示的,然而在其他实施例中,内联气体入口孔可仅被部分对准,例如在其与等离子体腔280相交处限定角度。以任何相对于环轴具有非零方位分量的角度经过内联气体入口孔850的源气体将在其被引入等离子体腔280时在气体中产生至少一些方位速度。
图13示意性地描绘直接出口环状等离子体源的具有多个内联气体入口孔850的等离子体阻挡件210(8)。环轴1、径向方向2及方位方向3再次图示于图13中以供参考。可以预期,可利用任何数量的内联气体入口孔850,且内联气体入口孔850可与处于其他角度的气体入口孔和/或与气体歧管810的变体结合使用,如图10及11中所示。
图14示意性地描绘直接出口环状等离子体源900的等离子体阻挡件210(9),图示了出口孔270可如何相对于形成其一个轴向侧的板910的表面法线以多个角度920限定。环轴的方向10及径向方向2再次图示于图14中以供参考;方位方向弯进及弯出图14的平面。以多个角度形成出口孔270可帮助将等离子体产物广泛地分布进相邻等离子体处理装置中,以促进均匀的处理。
图15A是直接出口环状等离子体源1000的示意性底视图说明,其中限定了四个出口孔270。图15的视图示意性地描绘直接出口环状等离子体源1000的底板,其中该板的另一侧上的等离子体阻挡件的大概边界由断线所暗示。即使仅使用四个出口孔270,相较于仅从一个孔抽取输出的现有技术的远程等离子体源,等离子体源1000也可提供显著更均匀的处理。环轴1延伸进图15A及15B的平面中;径向方向2及方位方向3图示于图15A中以供参考,但为了清楚说明而在图15B中被省略。图15B是直接出口环状等离子体源1100的示意性底视图说明,其中限定了超过六十个出口孔270。图15B的视图示意性地描绘直接出口环状等离子体源1100的底板,其中该板的另一侧上的等离子体阻挡件的大概边界由断线所暗示。相对应等离子体阻挡件的几何形状及材料、磁构件及电感线圈的数量及放置可被优化,以在等离子体阻挡件内产生均匀的等离子体分布,使得通过出口孔270所抽取的等离子体产物在空间上跨等离子体源1100是均匀的。在实施例中,直接环状等离子体源可包括数百或数千个出口孔270。
图16以横截面视图示意性地描绘等离子体晶片处理系统1200,其包括两个直接出口环状等离子体源1201及1202。为了清楚说明,仅标示处理系统1200的代表组件,且图16不是按比例绘制的。环轴1及径向方向2再次图示于图16中以供参考;方位方向弯进或弯出图16的平面,从环轴1的左边到右边改变符号。等离子体晶片处理系统限定处理腔室1234,该处理腔室1234围绕环轴1径向对称;因此等离子体源1201可被视为外等离子体源,同时等离子体源1202可被视为内等离子体源,其中等离子体源1201及1202的环轴及等离子体腔室1234的对称轴皆重合。再次地,虽然图16是针对晶片处理的实施例,但了解的是,其他实施例可利用相同的原理以供处理其他工件。
等离子体晶片处理系统1200利用等离子体源1201及1202以产生等离子体产物,且被配置用于在等离子体产物从等离子体的位置移动至正被处理的工件50时将等离子体产物与未活化气体可选地混合。等离子体晶片处理系统1200限定处理腔室1234,在该处理腔室1234中,基座1235将工件50定位于处置位置处,如所示的。在腔室1234的顶面1232的顶上,等离子体源1201形成外环形,且等离子体源1202形成内环形。等离子体源1201及1202可在具有或不具有气体歧管(如图10及11中所示)的情况下从入口孔260或830接收源气体(如分别于图5及11中所示的);这样的结构未示出于图16的视图中。等离子体源1201及1202中的每一个包括各自的等离子体阻挡件210(10)或210(11),且利用电感线圈230及磁构件220(3)来从其中的源气体产生等离子体。等离子体源1201及1202共享共同的底板1210,该共同的底板1210限定孔270以供朝处理腔室1234分布等离子体产物。
底板1210中的孔270提供均匀的、轴向方向(例如在环轴的方向上)的及短的路径,以供从等离子体产物起源处的等离子体将等离子体产物分布至正被处理的工件50。两个等离子体源1201和1202的使用(其中等离子体源1201限定外环且等离子体源1202限定内环)在优化对工件50的处理的中心至边缘的均匀性方面提供了显著的自由度。可通过改变工艺参数(特别是等离子体源1201及1202的)并测量在系统1200中所处理的测试晶片和/或产品晶片上的效果来优化处理配方。可调整整体气体流及提供至等离子体源1201和/或1202的RF能量,直到效果跨所处理的每一个工件50是均匀的为止。在实施例中,等离子体源1201及1202相较于彼此可运行不同的反应气体比率,和/或相较于彼此可利用完全不同的源气体。
处理系统1200亦提供通过底板1210及顶面1232的气体入口1270,以供供应要与等离子体产物混合的未活化气体(亦参照图17A)。图16及17A中所示的孔270和/或气体入口1270的数量及分布只是表示性的,且可在实施例间变化。
为了易于组装部件及部件的可替换性,底板1210在实施例中与腔室1234的顶面1232分离(如所示的)。也就是说,等离子体源1201及1202可与底板1210组装,及安装为单一单元或从顶面1232移除为单一单元。然而,在实施例中,底板1210及顶面1232的特征可结合于单一板中。
图16亦图示可选的扩散板1237,该扩散板1237限定孔1247,以供等离子体产物前行进处理腔室1234。扩散板1237亦可包括一或更多个气体通道1239,以传导可与等离子体产物混合的未活化气体。例如,如图16中所示,气体通道1239与输出气体孔1241连接,输出气体孔1241限定于扩散板1237的面向腔室的一侧中(亦参照图17B)。图16及17B中所示的孔1247和/或输出气体孔1241的数量及分布仅为表示性的,且可在实施例间变化。
图17A示意性地描绘等离子体处理系统1200(图16)的顶面1232的面朝上的示意性平面图,其中直接环状等离子体源1201及1202的底板1210的特征是可见的。为了清楚说明,仅标示顶面1232及底板1210的代表性组件,且图17并非按比例绘制。环轴、径向及方位方向未图示于图17A及17B中,但可从其他附图中所示的那些方向确定。许多孔270提供从产生等离子体产物的等离子体到正被处理的工件的用于来自等离子体源1201及1202的等离子体产物的在长度上非常短且均匀的路径,跨腔室1234促进了均匀的处理。例如,在实施例中,从等离子体源1201和/或1202内的等离子体到工件50上的任何位置的路径可小于四英寸。提供与孔270穿插的气体入口1270允许将未活化气体与等离子体产物混合。某些实施例在等离子体产物及未活化气体从图17A中(也就是在不包括扩散器1237的处理系统1200中)所示的结构出现时,有益地以等离子体产物及未活化气体处理晶片。其他实施例可受益于由扩散板1237所提供的额外气体及等离子体产物的混合。
图17B示意性地描绘扩散器1237的面朝上的示意性平面图。为了清楚说明,仅标示扩散板1237的代表性特征,且图17B并非按比例绘制。孔1247(描绘为开口圆)一路延伸穿过扩散板1237,同时出口气体孔1241(描绘为点)仅延伸进扩散板1237的底面,在该处,从气体通道1239将未活化气体供应给出口气体孔1241。扩散器1237促进等离子体产物与未活化气体的进一步的混合及对等离子体产物对未活化气体的比率的良好控制,这对于某些等离子体处理可能是有益的,但对于其他等离子体处理可能是不必要的。
图18以横截面视图示意性地描绘等离子体晶片处理系统1300,其包括两个直接出口环状等离子体源1301及1302。再次地,虽然图18是针对晶片处理的实施例,了解的是,其他实施例可利用相同原理以供处理其他工件。处理系统1300的许多特征将被辨识为实质类似于先前所述的系统且不再次描述。环轴1及径向方向2再次图示于图18中以供参考;方位方向弯进或弯出图18的平面,从环轴1的左边到右边改变符号。等离子体晶片处理系统限定处理腔室1334,该处理腔室1334围绕环轴1径向对称;因此等离子体源1301可被视为外等离子体源,同时等离子体源1302可被视为内等离子体源,其中等离子体源1301及1302的环轴及等离子体腔室1334的对称轴皆重合。图18描绘等离子体阻挡件210(12)及210(13)的额外特征,等离子体阻挡件210(12)及210(13)与下层空间开放性流体连通,而不是受底板所约束。图18还描绘域分隔器1360。
类似于等离子体源1201及1202的各自的位置,等离子体源1301及1302在处理腔室1334顶上限定内及外环形。等离子体源1301及1302可在具有或不具有气体歧管810(如图10及11中所示)的情况下从入口孔260或830接收源气体(如分别于图5及11中所示的);这样的结构未示出于图18的视图中。在处理腔室1334内,基座1335定位工件50以供处理。等离子体阻挡件210(12)和/或210(13)在其第一轴向侧上形成实质方位性连续的开口1370,也就是说,等离子体源1301及1302在第一轴向侧上实质上并不被约束,先前所讨论的等离子体源1201、1202及其他者亦是如此。开口1370在它们通过顶板1332在方位方向上显著延伸的方面而言可以是实质方位性连续的,然而,在此背景下,“实质方位性连续”并不排除中断开口1370以对于顶板1332的径向内部分提供机械支撑;与任一等离子体源的主要圆周的至少约75%相对应的开口会被视为是实质方位性连续的。此外,等离子体阻挡件210(12)及210(13)两者限定实质方位性连续的开口并不是关键的;在实施例中,等离子体阻挡件210(12)及210(13)中的一者限定实质方位性连续的开口同时另一者不限定。因此,等离子体源1301及1302的等离子体腔与在处理腔室1334的上部分中所形成的空间1355、1357流体连通,使得等离子体产物将通过开口1370传出等离子体阻挡件210(12)及210(13)而进入空间1355及1357。从空间1355、1357,等离子体产物通过扩散板1337传进处理腔室1334。
等离子体晶片处理系统1300当然可包括用于向等离子体源1301及1302供应源气体的供给件(provision)(例如结合图10-13所述的个别气体入口孔和/或气体歧管)及用于向等离子体产物增加进一步气体的供给件(例如图16、17A及17B中所描绘的气体入口1270和/或气体通道1239)。
等离子体阻挡件210(12)及210(13)的开口设计意味着,各等离子体阻挡件下的空间1355、1357中的每一个中的压力将实质由到相应等离子体阻挡件的输入气体流所决定。如果需要,可因此通过使用域分隔器1360来维持空间1355及1357的分离。域分隔器1360是圆形特征,该圆形特征围绕其完整圆周接触顶板1332及扩散板1337两者;图18的横截面图仅图示通过横截平面的域分隔器1360的两个部分。域分隔器1360通常由介电材料形成,且强制实行供应至处理腔室1334的中心区域及边缘区域的等离子体产物之间的分离。在实施例中,此分离可用以在处理腔室1334中单独控制中心及边缘处理效果,且因此用以优化工件50处的中心至边缘的处理均匀性。
用于向等离子体源1301及1302供应源气体的供给件可独立控制,以便处理腔室的中心区域及边缘区域处(例如大约对应于分别最受等离子体源1302及1301影响的那些区域)的处理效果可为了最佳的处理均匀性而被调整。对等离子体源1301及1302的源气体的独立可控性无论域分隔器1360是否存在都可以是有益的。
从前述说明,应清楚的是,一、二或更多个环状等离子体源可用以通过沿到处理腔室的短行进路径从等离子体源的轴向侧抽取等离子体产物来向处理腔室提供等离子体产物的均匀分布。多个环状等离子体源可经安置以具有构件,所述构件例如各自的等离子体阻挡件、等离子体阻挡件的介电断路器、磁构件、电感线圈、冷却装置、输出孔、入口气体歧管以及为了最佳的均匀性及到处理腔室的等离子体产物的最短传播路径而布置的其他相关联构件。
已描述若干实施例,将由本领域技术人员所辨识的是,可使用各种修改、替代结构及等效物而不脱离本发明的精神。此外,未描述许多熟知的处理及构件,以避免不必要地模糊了本发明。据此,不应将以上说明视为限制本发明的范围。
凡提供了值的范围,了解的是,亦具体公开了该范围的上及下限之间的各中间值(以下限单位的十分之一为单位,除非上下文另有清楚地指示)。包括任何经陈述的值或经陈述范围中的中间值和该经陈述范围中的任何其他经陈述或中间的值之间的每个较小范围。这些较小范围的上及下限可独立地被包括或排除于范围中,且该较小范围中包括任一限值、皆不包括限值或皆包括限值的各个范围亦包括在本发明中,受制于经陈述范围中的任何具体排除的限值。凡经陈述的范围包括限值中的一者或两者,则亦包括排除被包括的限值中的任一者或两者的范围。
如本文中及所附权利要求中所使用的,单数形式的“一个(a)”、“一个(an)”及“该(the)”包括了复数的指涉对象,除非上下文另有清楚指示。因此,例如,对于“一处理”的指称包括了多个这样的处理,且对于“该电极”的指称包括了对于一或更多个电极及其对本领域技术人员而言是熟知的等效物的指称,以此类推。并且,用字“包括(comprise)”、“包括(comprising)”、“包括(include)”、“包括(including)”及“包括(includes)”当用在此说明书中及以下权利要求中时,旨在指定所陈述特征、整数、组件或步骤的存在,但它们并不排除一或更多个其他特征、整数、组件、步骤、动作或群组的存在或增加。
Claims (15)
1.一种等离子体处理系统,包括:
处理腔室;及
等离子体源,所述等离子体源在等离子体腔中产生等离子体,
所述等离子体腔围绕环轴是实质径向对称的,
所述等离子体源在所述等离子体腔的第一轴向侧上限定多个出口孔,其中由所述等离子体所产生的等离子体产物在轴向方向上通过所述多个出口孔从所述等离子体腔朝所述处理腔室传递。
2.如权利要求1所述的等离子体处理系统,其中所述等离子体源包括等离子体产生阻挡件及平面板,所述平面板在所述第一轴向侧上邻接所述等离子体产生阻挡件,所述等离子体产生阻挡件及所述平面板实质围住所述等离子体腔,所述平面板限定所述多个出口孔。
3.如权利要求2所述的等离子体处理系统,所述等离子体源进一步包括电感线圈及磁心构件,
所述电感线圈至少部分地围绕所述磁心构件缠绕,且
所述磁心构件被安置于所述等离子体产生阻挡件附近,
使得所述电感线圈中的电流在所述磁心构件中诱发磁通量,且所述磁心构件中的所述磁通量在所述等离子体腔内诱发方位电流以产生所述等离子体。
4.如权利要求3所述的等离子体处理系统,所述平面板包括介电材料,所述等离子体腔包括铝,且包括多个介电断路器,所述多个介电断路器中断由所述磁通量所诱发的方位电流。
5.如权利要求1所述的等离子体处理系统,所述处理腔室围绕所述环轴是实质径向对称的,所述多个出口孔相对于所述环轴是对称地布置的,使得所述等离子体产物从所述等离子体腔朝所述处理腔室跨所述径向方向均匀地分布。
6.如权利要求1所述的等离子体处理系统,进一步包括扩散板,所述扩散板限定穿过所述扩散板的多个孔,所述扩散板安置于所述等离子体源及所述处理腔室之间,其中所述扩散板限定一或更多个气体通道,所述一或更多个气体通道向面向所述处理腔室的所述扩散板的一侧传导未活化气体。
7.一种等离子体处理系统,包括:
处理腔室,所述处理腔室围绕腔室轴是实质径向对称的;
外等离子体源,所述外等离子体源在外等离子体腔中产生第一等离子体,
所述外等离子体腔围绕环轴是径向对称的,所述环轴与所述腔室轴重合,
所述外等离子体腔沿所述外等离子体源的第一轴向侧通过外出口开口与所述处理腔室流体连通,使得由所述第一等离子体所产生的等离子体产物在轴向方向上通过所述外出口开口从所述外等离子体腔朝所述处理腔室传递;及
内等离子体源,所述内等离子体源在内等离子体腔中产生第二等离子体,
所述内等离子体腔围绕所述环轴是径向对称的,所述环轴与所述腔室轴重合,且所述内等离子体腔是自所述外等离子体腔径向朝内的,
所述内等离子体腔沿所述内等离子体源的第一轴向侧通过内出口开口与所述处理腔室流体连通,使得由所述第二等离子体所产生的等离子体产物在所述轴向方向上通过所述内出口开口从所述内等离子体腔朝所述处理腔室传递。
8.如权利要求7所述的等离子体处理系统,其中所述外出口开口及所述内出口开口中的至少一者是实质在方位上连续的。
9.如权利要求7所述的等离子体处理系统,其中所述内出口开口及所述外出口开口被限定于所述等离子体腔室的外板中,所述处理系统进一步包括扩散板,所述扩散板安置于所述外板与所述等离子体腔室内的处理位置之间。
10.如权利要求9所述的等离子体处理系统,进一步包括圆形域分隔器,所述圆形域分隔器被径向安置于所述内等离子体源与所述外等离子体源之间,所述域分隔器在所述域分隔器的圆周周围与所述等离子体腔室的所述外板及所述扩散板两者连续接触。
11.如权利要求7所述的等离子体处理系统,其中供应至所述内及外等离子体源的源气体是能独立控制的,以调整发生于所述处理腔室的中心区域及边缘区域处的处理效果。
12.一种等离子体处理的方法,包括以下步骤:
将源气体引入实质环状的等离子体腔中,所述实质环状的等离子体腔限定环轴;
在所述等离子体腔内诱发方位电场,以从所述源气体产生等离子体,从而形成等离子体产物;及
通过多个出口开口向处理腔室将所述等离子体产物直接分布进处理腔室中,所述多个出口开口实质在方位上分布于所述等离子体腔的第一轴向侧周围。
13.如权利要求12所述的方法,其中提供所述方位电场的步骤包括以下步骤:在电感线圈中提供电流以在安置于所述等离子体腔附近的磁构件中诱发磁通量,使得所述磁心构件中的所述磁通量诱发所述方位电场。
14.如权利要求12所述的方法,进一步包括以下步骤:将一或更多种未活化气体与所述等离子体产物混合。
15.如权利要求14所述的方法,其中将所述一或更多种未活化气体与所述等离子体产物混合的步骤包括以下步骤:通过孔传递所述等离子体产物,所述孔穿过扩散板而形成,及通过所述扩散板中的气体通道供应所述一或更多种未活化气体。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/565,077 US10224210B2 (en) | 2014-12-09 | 2014-12-09 | Plasma processing system with direct outlet toroidal plasma source |
US14/565,077 | 2014-12-09 | ||
PCT/US2015/061372 WO2016094047A1 (en) | 2014-12-09 | 2015-11-18 | Plasma processing system with direct outlet toroidal plasma source |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107004561A true CN107004561A (zh) | 2017-08-01 |
CN107004561B CN107004561B (zh) | 2020-07-31 |
Family
ID=56094936
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201580066116.8A Active CN107004561B (zh) | 2014-12-09 | 2015-11-18 | 具有直接出口环状等离子体源的等离子体处理系统 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10224210B2 (zh) |
JP (1) | JP6752205B2 (zh) |
KR (1) | KR102468600B1 (zh) |
CN (1) | CN107004561B (zh) |
TW (1) | TWI702630B (zh) |
WO (1) | WO2016094047A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113195785A (zh) * | 2018-10-18 | 2021-07-30 | 玳萌珠宝商贸有限公司 | 从成角度的气体流辅助的等离子体的轴对称材料沉积 |
Families Citing this family (100)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9324576B2 (en) | 2010-05-27 | 2016-04-26 | Applied Materials, Inc. | Selective etch for silicon films |
US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
US9064815B2 (en) | 2011-03-14 | 2015-06-23 | Applied Materials, Inc. | Methods for etch of metal and metal-oxide films |
US8999856B2 (en) | 2011-03-14 | 2015-04-07 | Applied Materials, Inc. | Methods for etch of sin films |
US9267739B2 (en) | 2012-07-18 | 2016-02-23 | Applied Materials, Inc. | Pedestal with multi-zone temperature control and multiple purge capabilities |
US9373517B2 (en) | 2012-08-02 | 2016-06-21 | Applied Materials, Inc. | Semiconductor processing with DC assisted RF power for improved control |
US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
US9362130B2 (en) | 2013-03-01 | 2016-06-07 | Applied Materials, Inc. | Enhanced etching processes using remote plasma sources |
US20140271097A1 (en) | 2013-03-15 | 2014-09-18 | Applied Materials, Inc. | Processing systems and methods for halide scavenging |
US9773648B2 (en) | 2013-08-30 | 2017-09-26 | Applied Materials, Inc. | Dual discharge modes operation for remote plasma |
US9576809B2 (en) | 2013-11-04 | 2017-02-21 | Applied Materials, Inc. | Etch suppression with germanium |
US9520303B2 (en) | 2013-11-12 | 2016-12-13 | Applied Materials, Inc. | Aluminum selective etch |
US9499898B2 (en) | 2014-03-03 | 2016-11-22 | Applied Materials, Inc. | Layered thin film heater and method of fabrication |
US9299537B2 (en) | 2014-03-20 | 2016-03-29 | Applied Materials, Inc. | Radial waveguide systems and methods for post-match control of microwaves |
US9903020B2 (en) | 2014-03-31 | 2018-02-27 | Applied Materials, Inc. | Generation of compact alumina passivation layers on aluminum plasma equipment components |
US9309598B2 (en) | 2014-05-28 | 2016-04-12 | Applied Materials, Inc. | Oxide and metal removal |
US9496167B2 (en) | 2014-07-31 | 2016-11-15 | Applied Materials, Inc. | Integrated bit-line airgap formation and gate stack post clean |
US9659753B2 (en) | 2014-08-07 | 2017-05-23 | Applied Materials, Inc. | Grooved insulator to reduce leakage current |
US9613822B2 (en) | 2014-09-25 | 2017-04-04 | Applied Materials, Inc. | Oxide etch selectivity enhancement |
US9355922B2 (en) | 2014-10-14 | 2016-05-31 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
US10573496B2 (en) | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
US11257693B2 (en) | 2015-01-09 | 2022-02-22 | Applied Materials, Inc. | Methods and systems to improve pedestal temperature control |
US9728437B2 (en) | 2015-02-03 | 2017-08-08 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
WO2016149050A1 (en) | 2015-03-13 | 2016-09-22 | Advanced Energy Industries, Inc. | Plasma source device and methods |
US9691645B2 (en) | 2015-08-06 | 2017-06-27 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US9349605B1 (en) | 2015-08-07 | 2016-05-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US10522371B2 (en) | 2016-05-19 | 2019-12-31 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US9865484B1 (en) | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
US10283330B2 (en) * | 2016-07-25 | 2019-05-07 | Lam Research Corporation | Systems and methods for achieving a pre-determined factor associated with an edge region within a plasma chamber by synchronizing main and edge RF generators |
US10062575B2 (en) | 2016-09-09 | 2018-08-28 | Applied Materials, Inc. | Poly directional etch by oxidation |
US10629473B2 (en) | 2016-09-09 | 2020-04-21 | Applied Materials, Inc. | Footing removal for nitride spacer |
US9934942B1 (en) | 2016-10-04 | 2018-04-03 | Applied Materials, Inc. | Chamber with flow-through source |
US9721789B1 (en) | 2016-10-04 | 2017-08-01 | Applied Materials, Inc. | Saving ion-damaged spacers |
US10062585B2 (en) | 2016-10-04 | 2018-08-28 | Applied Materials, Inc. | Oxygen compatible plasma source |
US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
US10062579B2 (en) | 2016-10-07 | 2018-08-28 | Applied Materials, Inc. | Selective SiN lateral recess |
US9947549B1 (en) | 2016-10-10 | 2018-04-17 | Applied Materials, Inc. | Cobalt-containing material removal |
US10163696B2 (en) | 2016-11-11 | 2018-12-25 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
US9768034B1 (en) | 2016-11-11 | 2017-09-19 | Applied Materials, Inc. | Removal methods for high aspect ratio structures |
US10242908B2 (en) | 2016-11-14 | 2019-03-26 | Applied Materials, Inc. | Airgap formation with damage-free copper |
US10026621B2 (en) | 2016-11-14 | 2018-07-17 | Applied Materials, Inc. | SiN spacer profile patterning |
US10566206B2 (en) | 2016-12-27 | 2020-02-18 | Applied Materials, Inc. | Systems and methods for anisotropic material breakthrough |
US10403507B2 (en) | 2017-02-03 | 2019-09-03 | Applied Materials, Inc. | Shaped etch profile with oxidation |
US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
US10043684B1 (en) | 2017-02-06 | 2018-08-07 | Applied Materials, Inc. | Self-limiting atomic thermal etching systems and methods |
US10319739B2 (en) | 2017-02-08 | 2019-06-11 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
US10319649B2 (en) | 2017-04-11 | 2019-06-11 | Applied Materials, Inc. | Optical emission spectroscopy (OES) for remote plasma monitoring |
US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
US10497579B2 (en) | 2017-05-31 | 2019-12-03 | Applied Materials, Inc. | Water-free etching methods |
US10049891B1 (en) | 2017-05-31 | 2018-08-14 | Applied Materials, Inc. | Selective in situ cobalt residue removal |
US10920320B2 (en) | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
US10541246B2 (en) | 2017-06-26 | 2020-01-21 | Applied Materials, Inc. | 3D flash memory cells which discourage cross-cell electrical tunneling |
US10727080B2 (en) | 2017-07-07 | 2020-07-28 | Applied Materials, Inc. | Tantalum-containing material removal |
US10541184B2 (en) | 2017-07-11 | 2020-01-21 | Applied Materials, Inc. | Optical emission spectroscopic techniques for monitoring etching |
US10354889B2 (en) | 2017-07-17 | 2019-07-16 | Applied Materials, Inc. | Non-halogen etching of silicon-containing materials |
US10170336B1 (en) | 2017-08-04 | 2019-01-01 | Applied Materials, Inc. | Methods for anisotropic control of selective silicon removal |
US10043674B1 (en) | 2017-08-04 | 2018-08-07 | Applied Materials, Inc. | Germanium etching systems and methods |
US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
US10283324B1 (en) | 2017-10-24 | 2019-05-07 | Applied Materials, Inc. | Oxygen treatment for nitride etching |
US10128086B1 (en) | 2017-10-24 | 2018-11-13 | Applied Materials, Inc. | Silicon pretreatment for nitride removal |
US10256112B1 (en) | 2017-12-08 | 2019-04-09 | Applied Materials, Inc. | Selective tungsten removal |
US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
US10679870B2 (en) | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
TWI766433B (zh) | 2018-02-28 | 2022-06-01 | 美商應用材料股份有限公司 | 形成氣隙的系統及方法 |
US10593560B2 (en) | 2018-03-01 | 2020-03-17 | Applied Materials, Inc. | Magnetic induction plasma source for semiconductor processes and equipment |
US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
US10497573B2 (en) | 2018-03-13 | 2019-12-03 | Applied Materials, Inc. | Selective atomic layer etching of semiconductor materials |
US10573527B2 (en) | 2018-04-06 | 2020-02-25 | Applied Materials, Inc. | Gas-phase selective etching systems and methods |
US10490406B2 (en) | 2018-04-10 | 2019-11-26 | Appled Materials, Inc. | Systems and methods for material breakthrough |
US10699879B2 (en) | 2018-04-17 | 2020-06-30 | Applied Materials, Inc. | Two piece electrode assembly with gap for plasma control |
US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
US11019715B2 (en) * | 2018-07-13 | 2021-05-25 | Mks Instruments, Inc. | Plasma source having a dielectric plasma chamber with improved plasma resistance |
US10672642B2 (en) | 2018-07-24 | 2020-06-02 | Applied Materials, Inc. | Systems and methods for pedestal configuration |
GB201813451D0 (en) | 2018-08-17 | 2018-10-03 | Spts Technologies Ltd | Plasma apparatus |
US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
US10553403B1 (en) * | 2019-05-08 | 2020-02-04 | Mks Instruments, Inc. | Polygonal toroidal plasma source |
KR20210155622A (ko) * | 2020-06-16 | 2021-12-23 | 주식회사 뉴파워 프라즈마 | 플라즈마 반응 장치 |
WO2023239531A1 (en) * | 2022-06-07 | 2023-12-14 | Lam Research Corporation | Liquid cooling plate for cooling of dielectric window of a substrate processing system |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010006093A1 (en) * | 1999-12-07 | 2001-07-05 | Toshihiro Tabuchi | Surface treatment apparatus |
US20020046991A1 (en) * | 1997-06-26 | 2002-04-25 | Smith Donald K. | Toroidal low-field reactive gas source |
US20040107908A1 (en) * | 2002-06-05 | 2004-06-10 | Applied Materials, Inc. | Plasma immersion ion implantation apparatus including an inductively coupled plasma source having low dissociation and low minimum plasma voltage |
KR100663668B1 (ko) * | 2005-12-07 | 2007-01-09 | 주식회사 뉴파워 프라즈마 | 복수의 기판을 병렬 배치 처리하기 위한 플라즈마 처리장치 |
KR100678696B1 (ko) * | 2006-02-08 | 2007-02-06 | 주식회사 뉴파워 프라즈마 | 환형 플라즈마를 형성하기 위한 페라이트 코어 조립체를구비한 자기 강화된 플라즈마 소오스 |
KR20070079870A (ko) * | 2006-02-04 | 2007-08-08 | 위순임 | 다중 출력 원격 플라즈마 발생기 및 이를 구비한 기판 처리시스템 |
US20120031559A1 (en) * | 2010-08-04 | 2012-02-09 | Lam Research Corporation | Dual Plasma Volume Processing Apparatus for Neutral/Ion Flux Control |
US20120035766A1 (en) * | 2010-08-06 | 2012-02-09 | Ali Shajii | Systems, methods and apparatus for choked flow element extraction |
CN102893705A (zh) * | 2010-05-14 | 2013-01-23 | 应用材料公司 | 使用磁场集中器的具有金属喷淋头的电感应式等离子体源 |
Family Cites Families (1689)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2369620A (en) | 1941-03-07 | 1945-02-13 | Battelle Development Corp | Method of coating cupreous metal with tin |
US3451840A (en) | 1965-10-06 | 1969-06-24 | Us Air Force | Wire coated with boron nitride and boron |
US3401302A (en) | 1965-11-01 | 1968-09-10 | Humphreys Corp | Induction plasma generator including cooling means, gas flow means, and operating means therefor |
US3537474A (en) | 1968-02-19 | 1970-11-03 | Varian Associates | Push button vacuum control valve and vacuum system using same |
US3756511A (en) | 1971-02-02 | 1973-09-04 | Kogyo Kaihatsu Kenyusho | Nozzle and torch for plasma jet |
US3969077A (en) | 1971-12-16 | 1976-07-13 | Varian Associates | Alkali metal leak detection method and apparatus |
US4232060A (en) | 1979-01-22 | 1980-11-04 | Richardson Chemical Company | Method of preparing substrate surface for electroless plating and products produced thereby |
US4632857A (en) | 1974-05-24 | 1986-12-30 | Richardson Chemical Company | Electrolessly plated product having a polymetallic catalytic film underlayer |
US4397812A (en) | 1974-05-24 | 1983-08-09 | Richardson Chemical Company | Electroless nickel polyalloys |
US4006047A (en) | 1974-07-22 | 1977-02-01 | Amp Incorporated | Catalysts for electroless deposition of metals on comparatively low-temperature polyolefin and polyester substrates |
US3937857A (en) | 1974-07-22 | 1976-02-10 | Amp Incorporated | Catalyst for electroless deposition of metals |
US4341592A (en) | 1975-08-04 | 1982-07-27 | Texas Instruments Incorporated | Method for removing photoresist layer from substrate by ozone treatment |
US4190488A (en) | 1978-08-21 | 1980-02-26 | International Business Machines Corporation | Etching method using noble gas halides |
US4265943A (en) | 1978-11-27 | 1981-05-05 | Macdermid Incorporated | Method and composition for continuous electroless copper deposition using a hypophosphite reducing agent in the presence of cobalt or nickel ions |
US4234628A (en) | 1978-11-28 | 1980-11-18 | The Harshaw Chemical Company | Two-step preplate system for polymeric surfaces |
US4214946A (en) | 1979-02-21 | 1980-07-29 | International Business Machines Corporation | Selective reactive ion etching of polysilicon against SiO2 utilizing SF6 -Cl2 -inert gas etchant |
US4209357A (en) | 1979-05-18 | 1980-06-24 | Tegal Corporation | Plasma reactor apparatus |
IT1130955B (it) | 1980-03-11 | 1986-06-18 | Oronzio De Nora Impianti | Procedimento per la formazione di elettroci sulle superficie di membrane semipermeabili e sistemi elettrodo-membrana cosi' prodotti |
US4361418A (en) | 1980-05-06 | 1982-11-30 | Risdon Corporation | High vacuum processing system having improved recycle draw-down capability under high humidity ambient atmospheric conditions |
NL8004005A (nl) | 1980-07-11 | 1982-02-01 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting. |
US4381441A (en) | 1980-10-30 | 1983-04-26 | Western Electric Company, Inc. | Methods of and apparatus for trimming film resistors |
US4340462A (en) | 1981-02-13 | 1982-07-20 | Lam Research Corporation | Adjustable electrode plasma processing chamber |
US4368223A (en) | 1981-06-01 | 1983-01-11 | Asahi Glass Company, Ltd. | Process for preparing nickel layer |
DE3205345A1 (de) | 1982-02-15 | 1983-09-01 | Philips Patentverwaltung Gmbh, 2000 Hamburg | "verfahren zur herstellung von fluordotierten lichtleitfasern" |
US4585920A (en) | 1982-05-21 | 1986-04-29 | Tegal Corporation | Plasma reactor removable insert |
JPS591671A (ja) | 1982-05-28 | 1984-01-07 | Fujitsu Ltd | プラズマcvd装置 |
JPS59126778A (ja) | 1983-01-11 | 1984-07-21 | Tokyo Denshi Kagaku Kabushiki | プラズマエツチング方法及びその装置 |
JPS6060060A (ja) | 1983-09-12 | 1985-04-06 | 株式会社日立製作所 | 鉄道車両の扉開閉装置 |
US4579618A (en) | 1984-01-06 | 1986-04-01 | Tegal Corporation | Plasma reactor apparatus |
US4656052A (en) | 1984-02-13 | 1987-04-07 | Kyocera Corporation | Process for production of high-hardness boron nitride film |
US4656076A (en) | 1985-04-26 | 1987-04-07 | Triquint Semiconductors, Inc. | Self-aligned recessed gate process |
US4807016A (en) | 1985-07-15 | 1989-02-21 | Texas Instruments Incorporated | Dry etch of phosphosilicate glass with selectivity to undoped oxide |
US4610775A (en) | 1985-07-26 | 1986-09-09 | Westinghouse Electric Corp. | Method and apparatus for clearing short-circuited, high-voltage cathodes in a sputtering chamber |
JPS6245119A (ja) | 1985-08-23 | 1987-02-27 | Matsushita Electric Ind Co Ltd | ドライエツチング装置 |
US4749440A (en) | 1985-08-28 | 1988-06-07 | Fsi Corporation | Gaseous process and apparatus for removing films from substrates |
US4668335A (en) | 1985-08-30 | 1987-05-26 | Advanced Micro Devices, Inc. | Anti-corrosion treatment for patterning of metallic layers |
US4690746A (en) | 1986-02-24 | 1987-09-01 | Genus, Inc. | Interlayer dielectric process |
US4715937A (en) | 1986-05-05 | 1987-12-29 | The Board Of Trustees Of The Leland Stanford Junior University | Low-temperature direct nitridation of silicon in nitrogen plasma generated by microwave discharge |
US4960488A (en) | 1986-12-19 | 1990-10-02 | Applied Materials, Inc. | Reactor chamber self-cleaning process |
US4892753A (en) | 1986-12-19 | 1990-01-09 | Applied Materials, Inc. | Process for PECVD of silicon oxide using TEOS decomposition |
US5000113A (en) | 1986-12-19 | 1991-03-19 | Applied Materials, Inc. | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
US4951601A (en) | 1986-12-19 | 1990-08-28 | Applied Materials, Inc. | Multi-chamber integrated process system |
US4872947A (en) | 1986-12-19 | 1989-10-10 | Applied Materials, Inc. | CVD of silicon oxide using TEOS decomposition and in-situ planarization process |
US5228501A (en) | 1986-12-19 | 1993-07-20 | Applied Materials, Inc. | Physical vapor deposition clamping mechanism and heater/cooler |
JPS63204726A (ja) | 1987-02-20 | 1988-08-24 | Anelva Corp | 真空処理装置 |
US4868071A (en) | 1987-02-24 | 1989-09-19 | Polyonics Corporation | Thermally stable dual metal coated laminate products made from textured polyimide film |
US5322976A (en) | 1987-02-24 | 1994-06-21 | Polyonics Corporation | Process for forming polyimide-metal laminates |
EP0283311B1 (en) | 1987-03-18 | 2001-08-01 | Kabushiki Kaisha Toshiba | Thin film forming method |
US4793897A (en) | 1987-03-20 | 1988-12-27 | Applied Materials, Inc. | Selective thin film etch process |
US4786360A (en) | 1987-03-30 | 1988-11-22 | International Business Machines Corporation | Anisotropic etch process for tungsten metallurgy |
US5198034A (en) | 1987-03-31 | 1993-03-30 | Epsilon Technology, Inc. | Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment |
DE3884653T2 (de) | 1987-04-03 | 1994-02-03 | Fujitsu Ltd | Verfahren und Vorrichtung zur Gasphasenabscheidung von Diamant. |
US4913929A (en) | 1987-04-21 | 1990-04-03 | The Board Of Trustees Of The Leland Stanford Junior University | Thermal/microwave remote plasma multiprocessing reactor and method of use |
JP2598019B2 (ja) | 1987-06-01 | 1997-04-09 | 富士通株式会社 | 感光体の製造方法 |
US4753898A (en) | 1987-07-09 | 1988-06-28 | Motorola, Inc. | LDD CMOS process |
US4828649A (en) | 1987-07-16 | 1989-05-09 | Texas Instruments Incorporated | Method for etching an aluminum film doped with silicon |
US4867841A (en) | 1987-07-16 | 1989-09-19 | Texas Instruments Incorporated | Method for etch of polysilicon film |
US4886570A (en) | 1987-07-16 | 1989-12-12 | Texas Instruments Incorporated | Processing apparatus and method |
US4857140A (en) | 1987-07-16 | 1989-08-15 | Texas Instruments Incorporated | Method for etching silicon nitride |
US4838990A (en) | 1987-07-16 | 1989-06-13 | Texas Instruments Incorporated | Method for plasma etching tungsten |
US4820377A (en) | 1987-07-16 | 1989-04-11 | Texas Instruments Incorporated | Method for cleanup processing chamber and vacuum process module |
US4878994A (en) | 1987-07-16 | 1989-11-07 | Texas Instruments Incorporated | Method for etching titanium nitride local interconnects |
US4904621A (en) | 1987-07-16 | 1990-02-27 | Texas Instruments Incorporated | Remote plasma generation process using a two-stage showerhead |
JPS6432627A (en) | 1987-07-29 | 1989-02-02 | Hitachi Ltd | Low-temperature dry etching method |
US4919750A (en) | 1987-09-14 | 1990-04-24 | International Business Machines Corporation | Etching metal films with complexing chloride plasma |
US4810520A (en) | 1987-09-23 | 1989-03-07 | Magnetic Peripherals Inc. | Method for controlling electroless magnetic plating |
US5180435A (en) | 1987-09-24 | 1993-01-19 | Research Triangle Institute, Inc. | Remote plasma enhanced CVD method and apparatus for growing an epitaxial semiconductor layer |
US4991542A (en) | 1987-10-14 | 1991-02-12 | The Furukawa Electric Co., Ltd. | Method of forming a thin film by plasma CVD and apapratus for forming a thin film |
US4865685A (en) | 1987-11-03 | 1989-09-12 | North Carolina State University | Dry etching of silicon carbide |
US4981551A (en) | 1987-11-03 | 1991-01-01 | North Carolina State University | Dry etching of silicon carbide |
US4792378A (en) | 1987-12-15 | 1988-12-20 | Texas Instruments Incorporated | Gas dispersion disk for use in plasma enhanced chemical vapor deposition reactor |
US4851370A (en) | 1987-12-28 | 1989-07-25 | American Telephone And Telegraph Company, At&T Bell Laboratories | Fabricating a semiconductor device with low defect density oxide |
JP2804037B2 (ja) | 1988-02-05 | 1998-09-24 | 株式会社東芝 | ドライエッチング方法 |
JPH01297141A (ja) | 1988-05-25 | 1989-11-30 | Canon Inc | マイクロ波プラズマ処理装置 |
US4900856A (en) | 1988-05-26 | 1990-02-13 | Ethyl Corporation | Preparation of metal halide-amine complexes |
JPH029115A (ja) | 1988-06-28 | 1990-01-12 | Mitsubishi Electric Corp | 半導体製造装置 |
US4904341A (en) | 1988-08-22 | 1990-02-27 | Westinghouse Electric Corp. | Selective silicon dioxide etchant for superconductor integrated circuits |
JPH02114525A (ja) | 1988-10-24 | 1990-04-26 | Toshiba Corp | 有機化合物膜の除去方法及び除去装置 |
JPH02114530A (ja) | 1988-10-25 | 1990-04-26 | Mitsubishi Electric Corp | 薄膜形成装置 |
US4894352A (en) | 1988-10-26 | 1990-01-16 | Texas Instruments Inc. | Deposition of silicon-containing films using organosilicon compounds and nitrogen trifluoride |
KR930004115B1 (ko) | 1988-10-31 | 1993-05-20 | 후지쓰 가부시끼가이샤 | 애싱(ashing)처리방법 및 장치 |
DE68928402T2 (de) | 1988-12-27 | 1998-03-12 | Toshiba Kawasaki Kk | Verfahren zur Entfernung einer Oxidschicht auf einem Substrat |
US4985372A (en) | 1989-02-17 | 1991-01-15 | Tokyo Electron Limited | Method of forming conductive layer including removal of native oxide |
IT216961Z2 (it) | 1989-03-07 | 1991-10-21 | Roltra Spa | Dispositivo attuatore per bloccaserratura elettrico |
JP2823276B2 (ja) | 1989-03-18 | 1998-11-11 | 株式会社東芝 | X線マスクの製造方法および薄膜の内部応力制御装置 |
US4946903A (en) | 1989-03-27 | 1990-08-07 | The Research Foundation Of State University Of Ny | Oxyfluoropolymers having chemically reactive surface functionality and increased surface energies |
US5186718A (en) | 1989-05-19 | 1993-02-16 | Applied Materials, Inc. | Staged-vacuum wafer processing system and method |
US5061838A (en) | 1989-06-23 | 1991-10-29 | Massachusetts Institute Of Technology | Toroidal electron cyclotron resonance reactor |
US5270125A (en) | 1989-07-11 | 1993-12-14 | Redwood Microsystems, Inc. | Boron nutride membrane in wafer structure |
US4993358A (en) | 1989-07-28 | 1991-02-19 | Watkins-Johnson Company | Chemical vapor deposition reactor and method of operation |
US5013691A (en) | 1989-07-31 | 1991-05-07 | At&T Bell Laboratories | Anisotropic deposition of silicon dioxide |
US5028565A (en) | 1989-08-25 | 1991-07-02 | Applied Materials, Inc. | Process for CVD deposition of tungsten layer on semiconductor wafer |
US4994404A (en) | 1989-08-28 | 1991-02-19 | Motorola, Inc. | Method for forming a lightly-doped drain (LDD) structure in a semiconductor device |
US4980018A (en) | 1989-11-14 | 1990-12-25 | Intel Corporation | Plasma etching process for refractory metal vias |
EP0447155B1 (en) | 1990-03-12 | 1995-07-26 | Ngk Insulators, Ltd. | Wafer heaters for use in semi-conductor-producing apparatus, heating units using such wafer heaters, and production of heaters |
JP2960466B2 (ja) | 1990-03-19 | 1999-10-06 | 株式会社日立製作所 | 半導体デバイスの配線絶縁膜の形成方法及びその装置 |
US5089441A (en) | 1990-04-16 | 1992-02-18 | Texas Instruments Incorporated | Low-temperature in-situ dry cleaning process for semiconductor wafers |
US5147692A (en) | 1990-05-08 | 1992-09-15 | Macdermid, Incorporated | Electroless plating of nickel onto surfaces such as copper or fused tungston |
US5069938A (en) | 1990-06-07 | 1991-12-03 | Applied Materials, Inc. | Method of forming a corrosion-resistant protective coating on aluminum substrate |
US5238499A (en) | 1990-07-16 | 1993-08-24 | Novellus Systems, Inc. | Gas-based substrate protection during processing |
US5083030A (en) | 1990-07-18 | 1992-01-21 | Applied Photonics Research | Double-sided radiation-assisted processing apparatus |
US5235139A (en) | 1990-09-12 | 1993-08-10 | Macdermid, Incorprated | Method for fabricating printed circuits |
US5089442A (en) | 1990-09-20 | 1992-02-18 | At&T Bell Laboratories | Silicon dioxide deposition method using a magnetic field and both sputter deposition and plasma-enhanced cvd |
KR930011413B1 (ko) | 1990-09-25 | 1993-12-06 | 가부시키가이샤 한도오따이 에네루기 겐큐쇼 | 펄스형 전자파를 사용한 플라즈마 cvd 법 |
DE69116058T2 (de) | 1990-09-27 | 1996-08-22 | At & T Corp | Verfahren zur Herstellung integrierter Schaltungen |
JPH04142738A (ja) | 1990-10-04 | 1992-05-15 | Sony Corp | ドライエッチング方法 |
JPH04355917A (ja) | 1990-10-12 | 1992-12-09 | Seiko Epson Corp | 半導体装置の製造装置 |
US5549780A (en) | 1990-10-23 | 1996-08-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for plasma processing and apparatus for plasma processing |
JPH0817171B2 (ja) | 1990-12-31 | 1996-02-21 | 株式会社半導体エネルギー研究所 | プラズマ発生装置およびそれを用いたエッチング方法 |
JP2640174B2 (ja) | 1990-10-30 | 1997-08-13 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JP3206916B2 (ja) | 1990-11-28 | 2001-09-10 | 住友電気工業株式会社 | 欠陥濃度低減方法、紫外線透過用光学ガラスの製造方法及び紫外線透過用光学ガラス |
US5578130A (en) | 1990-12-12 | 1996-11-26 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus and method for depositing a film |
US5314724A (en) | 1991-01-08 | 1994-05-24 | Fujitsu Limited | Process for forming silicon oxide film |
JP2697315B2 (ja) | 1991-01-23 | 1998-01-14 | 日本電気株式会社 | フッ素含有シリコン酸化膜の形成方法 |
JP2787142B2 (ja) | 1991-03-01 | 1998-08-13 | 上村工業 株式会社 | 無電解錫、鉛又はそれらの合金めっき方法 |
DE4107006A1 (de) | 1991-03-05 | 1992-09-10 | Siemens Ag | Verfahren zum anisotropen trockenaetzen von aluminium bzw. aluminiumlegierungen enthaltenden leiterbahnebenen in integrierten halbleiterschaltungen |
US5897751A (en) | 1991-03-11 | 1999-04-27 | Regents Of The University Of California | Method of fabricating boron containing coatings |
US5330578A (en) | 1991-03-12 | 1994-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Plasma treatment apparatus |
US5290383A (en) | 1991-03-24 | 1994-03-01 | Tokyo Electron Limited | Plasma-process system with improved end-point detecting scheme |
JPH05508266A (ja) | 1991-04-03 | 1993-11-18 | イーストマン・コダック・カンパニー | GaAsをドライエッチングするための高耐久性マスク |
EP0511448A1 (en) | 1991-04-30 | 1992-11-04 | International Business Machines Corporation | Method and apparatus for in-situ and on-line monitoring of a trench formation process |
JPH04341568A (ja) | 1991-05-16 | 1992-11-27 | Toshiba Corp | 薄膜形成方法及び薄膜形成装置 |
JP2699695B2 (ja) | 1991-06-07 | 1998-01-19 | 日本電気株式会社 | 化学気相成長法 |
US5203911A (en) | 1991-06-24 | 1993-04-20 | Shipley Company Inc. | Controlled electroless plating |
US6074512A (en) | 1991-06-27 | 2000-06-13 | Applied Materials, Inc. | Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners |
US6077384A (en) | 1994-08-11 | 2000-06-20 | Applied Materials, Inc. | Plasma reactor having an inductive antenna coupling power through a parallel plate electrode |
US5279865A (en) | 1991-06-28 | 1994-01-18 | Digital Equipment Corporation | High throughput interlevel dielectric gap filling process |
JPH0521393A (ja) | 1991-07-11 | 1993-01-29 | Sony Corp | プラズマ処理装置 |
JPH0562936A (ja) | 1991-09-03 | 1993-03-12 | Mitsubishi Electric Corp | プラズマ処理装置およびプラズマクリーニング方法 |
US5240497A (en) | 1991-10-08 | 1993-08-31 | Cornell Research Foundation, Inc. | Alkaline free electroless deposition |
JPH05226480A (ja) | 1991-12-04 | 1993-09-03 | Nec Corp | 半導体装置の製造方法 |
US5290382A (en) | 1991-12-13 | 1994-03-01 | Hughes Aircraft Company | Methods and apparatus for generating a plasma for "downstream" rapid shaping of surfaces of substrates and films |
US5279669A (en) | 1991-12-13 | 1994-01-18 | International Business Machines Corporation | Plasma reactor for processing substrates comprising means for inducing electron cyclotron resonance (ECR) and ion cyclotron resonance (ICR) conditions |
US5352636A (en) | 1992-01-16 | 1994-10-04 | Applied Materials, Inc. | In situ method for cleaning silicon surface and forming layer thereon in same chamber |
US5300463A (en) | 1992-03-06 | 1994-04-05 | Micron Technology, Inc. | Method of selectively etching silicon dioxide dielectric layers on semiconductor wafers |
JP3084497B2 (ja) | 1992-03-25 | 2000-09-04 | 東京エレクトロン株式会社 | SiO2膜のエッチング方法 |
JP2773530B2 (ja) | 1992-04-15 | 1998-07-09 | 日本電気株式会社 | 半導体装置の製造方法 |
JP2792335B2 (ja) | 1992-05-27 | 1998-09-03 | 日本電気株式会社 | 半導体装置の製造方法 |
KR100293830B1 (ko) | 1992-06-22 | 2001-09-17 | 리차드 에이치. 로브그렌 | 플라즈마 처리 쳄버내의 잔류물 제거를 위한 플라즈마 정결방법 |
US5286297A (en) | 1992-06-24 | 1994-02-15 | Texas Instruments Incorporated | Multi-electrode plasma processing apparatus |
US5534072A (en) | 1992-06-24 | 1996-07-09 | Anelva Corporation | Integrated module multi-chamber CVD processing system and its method for processing subtrates |
US5252178A (en) | 1992-06-24 | 1993-10-12 | Texas Instruments Incorporated | Multi-zone plasma processing method and apparatus |
JP3688726B2 (ja) | 1992-07-17 | 2005-08-31 | 株式会社東芝 | 半導体装置の製造方法 |
US5380560A (en) | 1992-07-28 | 1995-01-10 | International Business Machines Corporation | Palladium sulfate solution for the selective seeding of the metal interconnections on polyimide dielectrics for electroless metal deposition |
US5248371A (en) | 1992-08-13 | 1993-09-28 | General Signal Corporation | Hollow-anode glow discharge apparatus |
US5292370A (en) | 1992-08-14 | 1994-03-08 | Martin Marietta Energy Systems, Inc. | Coupled microwave ECR and radio-frequency plasma source for plasma processing |
US5271972A (en) | 1992-08-17 | 1993-12-21 | Applied Materials, Inc. | Method for depositing ozone/TEOS silicon oxide films of reduced surface sensitivity |
US5326427A (en) | 1992-09-11 | 1994-07-05 | Lsi Logic Corporation | Method of selectively etching titanium-containing materials on a semiconductor wafer using remote plasma generation |
US5306530A (en) | 1992-11-23 | 1994-04-26 | Associated Universities, Inc. | Method for producing high quality thin layer films on substrates |
JP2809018B2 (ja) | 1992-11-26 | 1998-10-08 | 日本電気株式会社 | 半導体装置およびその製造方法 |
US5382311A (en) | 1992-12-17 | 1995-01-17 | Tokyo Electron Limited | Stage having electrostatic chuck and plasma processing apparatus using same |
US5500249A (en) | 1992-12-22 | 1996-03-19 | Applied Materials, Inc. | Uniform tungsten silicide films produced by chemical vapor deposition |
US5756402A (en) | 1992-12-28 | 1998-05-26 | Kabushiki Kaisha Toshiba | Method of etching silicon nitride film |
US5624582A (en) | 1993-01-21 | 1997-04-29 | Vlsi Technology, Inc. | Optimization of dry etching through the control of helium backside pressure |
US5366585A (en) | 1993-01-28 | 1994-11-22 | Applied Materials, Inc. | Method and apparatus for protection of conductive surfaces in a plasma processing reactor |
US5345999A (en) | 1993-03-17 | 1994-09-13 | Applied Materials, Inc. | Method and apparatus for cooling semiconductor wafers |
US5302233A (en) | 1993-03-19 | 1994-04-12 | Micron Semiconductor, Inc. | Method for shaping features of a semiconductor structure using chemical mechanical planarization (CMP) |
JP3236111B2 (ja) | 1993-03-31 | 2001-12-10 | キヤノン株式会社 | プラズマ処理装置及び処理方法 |
US5800686A (en) | 1993-04-05 | 1998-09-01 | Applied Materials, Inc. | Chemical vapor deposition chamber with substrate edge protection |
KR0142150B1 (ko) | 1993-04-09 | 1998-07-15 | 윌리엄 티. 엘리스 | 붕소 질화물을 에칭하기 위한 방법 |
US5416048A (en) | 1993-04-16 | 1995-05-16 | Micron Semiconductor, Inc. | Method to slope conductor profile prior to dielectric deposition to improve dielectric step-coverage |
EP0628644B1 (en) | 1993-05-27 | 2003-04-02 | Applied Materials, Inc. | Improvements in or relating to susceptors suitable for use in chemical vapour deposition devices |
US5591269A (en) | 1993-06-24 | 1997-01-07 | Tokyo Electron Limited | Vacuum processing apparatus |
US5292682A (en) | 1993-07-06 | 1994-03-08 | Eastman Kodak Company | Method of making two-phase charge coupled device |
US5413670A (en) | 1993-07-08 | 1995-05-09 | Air Products And Chemicals, Inc. | Method for plasma etching or cleaning with diluted NF3 |
US5560779A (en) | 1993-07-12 | 1996-10-01 | Olin Corporation | Apparatus for synthesizing diamond films utilizing an arc plasma |
WO1995002900A1 (en) | 1993-07-15 | 1995-01-26 | Astarix, Inc. | Aluminum-palladium alloy for initiation of electroless plating |
DE69421465T2 (de) | 1993-07-30 | 2000-02-10 | Applied Materials, Inc. | Verfahren zur Ablagerung von Silzium-Nitrid auf Siliziumoberflächen |
US5483920A (en) | 1993-08-05 | 1996-01-16 | Board Of Governors Of Wayne State University | Method of forming cubic boron nitride films |
US5685946A (en) | 1993-08-11 | 1997-11-11 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Method of producing buried porous silicon-geramanium layers in monocrystalline silicon lattices |
US5468597A (en) | 1993-08-25 | 1995-11-21 | Shipley Company, L.L.C. | Selective metallization process |
US5865896A (en) | 1993-08-27 | 1999-02-02 | Applied Materials, Inc. | High density plasma CVD reactor with combined inductive and capacitive coupling |
US5614055A (en) | 1993-08-27 | 1997-03-25 | Applied Materials, Inc. | High density plasma CVD and etching reactor |
US5384284A (en) | 1993-10-01 | 1995-01-24 | Micron Semiconductor, Inc. | Method to form a low resistant bond pad interconnect |
SE501888C2 (sv) | 1993-10-18 | 1995-06-12 | Ladislav Bardos | En metod och en apparat för generering av en urladdning i egna ångor från en radiofrekvenselektrod för kontinuerlig självförstoftning av elektroden |
US5505816A (en) | 1993-12-16 | 1996-04-09 | International Business Machines Corporation | Etching of silicon dioxide selectively to silicon nitride and polysilicon |
US5415890A (en) | 1994-01-03 | 1995-05-16 | Eaton Corporation | Modular apparatus and method for surface treatment of parts with liquid baths |
US5403434A (en) | 1994-01-06 | 1995-04-04 | Texas Instruments Incorporated | Low-temperature in-situ dry cleaning process for semiconductor wafer |
JP3188363B2 (ja) | 1994-01-21 | 2001-07-16 | エフエスアイ・インターナショナル・インコーポレーテッド | 循環クーラントを用いた温度コントローラ及びそのための温度制御方法 |
US5399237A (en) | 1994-01-27 | 1995-03-21 | Applied Materials, Inc. | Etching titanium nitride using carbon-fluoride and carbon-oxide gas |
US5451259A (en) | 1994-02-17 | 1995-09-19 | Krogh; Ole D. | ECR plasma source for remote processing |
US5439553A (en) | 1994-03-30 | 1995-08-08 | Penn State Research Foundation | Controlled etching of oxides via gas phase reactions |
DE69531880T2 (de) | 1994-04-28 | 2004-09-09 | Applied Materials, Inc., Santa Clara | Verfahren zum Betreiben eines CVD-Reaktors hoher Plasma-Dichte mit kombinierter induktiver und kapazitiver Einkopplung |
US5468342A (en) | 1994-04-28 | 1995-11-21 | Cypress Semiconductor Corp. | Method of etching an oxide layer |
US6110838A (en) | 1994-04-29 | 2000-08-29 | Texas Instruments Incorporated | Isotropic polysilicon plus nitride stripping |
US5531835A (en) | 1994-05-18 | 1996-07-02 | Applied Materials, Inc. | Patterned susceptor to reduce electrostatic force in a CVD chamber |
US5628829A (en) | 1994-06-03 | 1997-05-13 | Materials Research Corporation | Method and apparatus for low temperature deposition of CVD and PECVD films |
US5665640A (en) | 1994-06-03 | 1997-09-09 | Sony Corporation | Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor |
US5580421A (en) | 1994-06-14 | 1996-12-03 | Fsi International | Apparatus for surface conditioning |
US5767373A (en) | 1994-06-16 | 1998-06-16 | Novartis Finance Corporation | Manipulation of protoporphyrinogen oxidase enzyme activity in eukaryotic organisms |
JP3501524B2 (ja) | 1994-07-01 | 2004-03-02 | 東京エレクトロン株式会社 | 処理装置の真空排気システム |
JP3411678B2 (ja) | 1994-07-08 | 2003-06-03 | 東京エレクトロン株式会社 | 処理装置 |
US5592358A (en) | 1994-07-18 | 1997-01-07 | Applied Materials, Inc. | Electrostatic chuck for magnetic flux processing |
US5563105A (en) | 1994-09-30 | 1996-10-08 | International Business Machines Corporation | PECVD method of depositing fluorine doped oxide using a fluorine precursor containing a glass-forming element |
JPH08107101A (ja) | 1994-10-03 | 1996-04-23 | Fujitsu Ltd | プラズマ処理装置及びプラズマ処理方法 |
US5558717A (en) | 1994-11-30 | 1996-09-24 | Applied Materials | CVD Processing chamber |
TW344897B (en) | 1994-11-30 | 1998-11-11 | At&T Tcorporation | A process for forming gate oxides possessing different thicknesses on a semiconductor substrate |
CN1053764C (zh) | 1994-12-09 | 2000-06-21 | 中国科学院微电子中心 | 束致变蚀方法 |
US5792376A (en) | 1995-01-06 | 1998-08-11 | Kabushiki Kaisha Toshiba | Plasma processing apparatus and plasma processing method |
US5772770A (en) | 1995-01-27 | 1998-06-30 | Kokusai Electric Co, Ltd. | Substrate processing apparatus |
JPH08279495A (ja) | 1995-02-07 | 1996-10-22 | Seiko Epson Corp | プラズマ処理装置及びその方法 |
US5571576A (en) | 1995-02-10 | 1996-11-05 | Watkins-Johnson | Method of forming a fluorinated silicon oxide layer using plasma chemical vapor deposition |
US5670066A (en) | 1995-03-17 | 1997-09-23 | Lam Research Corporation | Vacuum plasma processing wherein workpiece position is detected prior to chuck being activated |
US6039851A (en) | 1995-03-22 | 2000-03-21 | Micron Technology, Inc. | Reactive sputter faceting of silicon dioxide to enhance gap fill of spaces between metal lines |
JPH08264510A (ja) | 1995-03-27 | 1996-10-11 | Toshiba Corp | シリコン窒化膜のエッチング方法およびエッチング装置 |
US5571577A (en) | 1995-04-07 | 1996-11-05 | Board Of Trustees Operating Michigan State University | Method and apparatus for plasma treatment of a surface |
JP3270852B2 (ja) | 1995-04-20 | 2002-04-02 | 東京エレクトロン株式会社 | 圧力調整装置及びこれを用いた部屋の連通方法 |
US20010028922A1 (en) | 1995-06-07 | 2001-10-11 | Sandhu Gurtej S. | High throughput ILD fill process for high aspect ratio gap fill |
TW434745B (en) | 1995-06-07 | 2001-05-16 | Tokyo Electron Ltd | Plasma processing apparatus |
JP3599204B2 (ja) | 1995-06-08 | 2004-12-08 | アネルバ株式会社 | Cvd装置 |
JP2814370B2 (ja) | 1995-06-18 | 1998-10-22 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US5997962A (en) | 1995-06-30 | 1999-12-07 | Tokyo Electron Limited | Plasma process utilizing an electrostatic chuck |
US6022446A (en) * | 1995-08-21 | 2000-02-08 | Shan; Hongching | Shallow magnetic fields for generating circulating electrons to enhance plasma processing |
US6197364B1 (en) | 1995-08-22 | 2001-03-06 | International Business Machines Corporation | Production of electroless Co(P) with designed coercivity |
US5755859A (en) | 1995-08-24 | 1998-05-26 | International Business Machines Corporation | Cobalt-tin alloys and their applications for devices, chip interconnections and packaging |
AU6962196A (en) | 1995-09-01 | 1997-03-27 | Advanced Semiconductor Materials America, Inc. | Wafer support system |
US6228751B1 (en) | 1995-09-08 | 2001-05-08 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
US5719085A (en) | 1995-09-29 | 1998-02-17 | Intel Corporation | Shallow trench isolation technique |
US5716506A (en) | 1995-10-06 | 1998-02-10 | Board Of Trustees Of The University Of Illinois | Electrochemical sensors for gas detection |
JPH09106898A (ja) | 1995-10-09 | 1997-04-22 | Anelva Corp | プラズマcvd装置、プラズマ処理装置及びプラズマcvd方法 |
US5635086A (en) | 1995-10-10 | 1997-06-03 | The Esab Group, Inc. | Laser-plasma arc metal cutting apparatus |
JPH09106899A (ja) | 1995-10-11 | 1997-04-22 | Anelva Corp | プラズマcvd装置及び方法並びにドライエッチング装置及び方法 |
US5814238A (en) | 1995-10-12 | 1998-09-29 | Sandia Corporation | Method for dry etching of transition metals |
US5910340A (en) | 1995-10-23 | 1999-06-08 | C. Uyemura & Co., Ltd. | Electroless nickel plating solution and method |
US6015724A (en) | 1995-11-02 | 2000-01-18 | Semiconductor Energy Laboratory Co. | Manufacturing method of a semiconductor device |
US5648125A (en) | 1995-11-16 | 1997-07-15 | Cane; Frank N. | Electroless plating process for the manufacture of printed circuit boards |
US5599740A (en) | 1995-11-16 | 1997-02-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Deposit-etch-deposit ozone/teos insulator layer method |
US5846598A (en) | 1995-11-30 | 1998-12-08 | International Business Machines Corporation | Electroless plating of metallic features on nonmetallic or semiconductor layer without extraneous plating |
US5756400A (en) | 1995-12-08 | 1998-05-26 | Applied Materials, Inc. | Method and apparatus for cleaning by-products from plasma chamber surfaces |
US5733816A (en) | 1995-12-13 | 1998-03-31 | Micron Technology, Inc. | Method for depositing a tungsten layer on silicon |
US6261637B1 (en) | 1995-12-15 | 2001-07-17 | Enthone-Omi, Inc. | Use of palladium immersion deposition to selectively initiate electroless plating on Ti and W alloys for wafer fabrication |
DE69608669T2 (de) | 1995-12-19 | 2001-03-01 | Cornell Research Foundation, Inc. | Stromloses aufbringen von metallfilmen mit sprayprozessor |
US5883012A (en) | 1995-12-21 | 1999-03-16 | Motorola, Inc. | Method of etching a trench into a semiconductor substrate |
US5679606A (en) | 1995-12-27 | 1997-10-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | method of forming inter-metal-dielectric structure |
WO1997024761A1 (en) | 1995-12-27 | 1997-07-10 | Lam Research Corporation | Methods and apparatus for filling trenches in a semiconductor wafer |
WO1997024760A1 (fr) | 1995-12-28 | 1997-07-10 | Nippon Sanso Corporation | Procede et dispositif de transfert de substrats en plaques minces |
US5674787A (en) | 1996-01-16 | 1997-10-07 | Sematech, Inc. | Selective electroless copper deposited interconnect plugs for ULSI applications |
US5891513A (en) | 1996-01-16 | 1999-04-06 | Cornell Research Foundation | Electroless CU deposition on a barrier layer by CU contact displacement for ULSI applications |
US5824599A (en) | 1996-01-16 | 1998-10-20 | Cornell Research Foundation, Inc. | Protected encapsulation of catalytic layer for electroless copper interconnect |
US6036878A (en) | 1996-02-02 | 2000-03-14 | Applied Materials, Inc. | Low density high frequency process for a parallel-plate electrode plasma reactor having an inductive antenna |
US5872052A (en) | 1996-02-12 | 1999-02-16 | Micron Technology, Inc. | Planarization using plasma oxidized amorphous silicon |
US5648175A (en) | 1996-02-14 | 1997-07-15 | Applied Materials, Inc. | Chemical vapor deposition reactor system and integrated circuit |
US6004884A (en) | 1996-02-15 | 1999-12-21 | Lam Research Corporation | Methods and apparatus for etching semiconductor wafers |
TW335517B (en) | 1996-03-01 | 1998-07-01 | Hitachi Ltd | Apparatus and method for processing plasma |
US5656093A (en) | 1996-03-08 | 1997-08-12 | Applied Materials, Inc. | Wafer spacing mask for a substrate support chuck and method of fabricating same |
JPH09260356A (ja) | 1996-03-22 | 1997-10-03 | Toshiba Corp | ドライエッチング方法 |
KR20000005011A (ko) | 1996-03-25 | 2000-01-25 | 알만드 피. 뉴커만스 | 이식가능한 보청기 마이크로액추에이터의 장착장치 및 방법 |
US6065425A (en) | 1996-03-25 | 2000-05-23 | Canon Kabushiki Kaisha | Plasma process apparatus and plasma process method |
US5858876A (en) | 1996-04-01 | 1999-01-12 | Chartered Semiconductor Manufacturing, Ltd. | Simultaneous deposit and etch method for forming a void-free and gap-filling insulator layer upon a patterned substrate layer |
US5712185A (en) | 1996-04-23 | 1998-01-27 | United Microelectronics | Method for forming shallow trench isolation |
US5843847A (en) | 1996-04-29 | 1998-12-01 | Applied Materials, Inc. | Method for etching dielectric layers with high selectivity and low microloading |
US6176667B1 (en) | 1996-04-30 | 2001-01-23 | Applied Materials, Inc. | Multideck wafer processing system |
KR100230981B1 (ko) | 1996-05-08 | 1999-11-15 | 김광호 | 반도체장치 제조공정의 플라즈마 식각 방법 |
US5660957A (en) | 1996-05-16 | 1997-08-26 | Fujitsu Limited | Electron-beam treatment procedure for patterned mask layers |
US5863376A (en) | 1996-06-05 | 1999-01-26 | Lam Research Corporation | Temperature controlling method and apparatus for a plasma processing chamber |
US6048798A (en) | 1996-06-05 | 2000-04-11 | Lam Research Corporation | Apparatus for reducing process drift in inductive coupled plasma etching such as oxide layer |
US5820723A (en) | 1996-06-05 | 1998-10-13 | Lam Research Corporation | Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support |
JPH1068094A (ja) | 1996-06-13 | 1998-03-10 | Samsung Electron Co Ltd | 遷移金属薄膜用蝕刻ガス混合物およびこれを用いた遷移金属薄膜の蝕刻方法 |
US5846373A (en) | 1996-06-28 | 1998-12-08 | Lam Research Corporation | Method for monitoring process endpoints in a plasma chamber and a process monitoring arrangement in a plasma chamber |
US5846883A (en) | 1996-07-10 | 1998-12-08 | Cvc, Inc. | Method for multi-zone high-density inductively-coupled plasma generation |
US5993916A (en) | 1996-07-12 | 1999-11-30 | Applied Materials, Inc. | Method for substrate processing with improved throughput and yield |
US5846332A (en) | 1996-07-12 | 1998-12-08 | Applied Materials, Inc. | Thermally floating pedestal collar in a chemical vapor deposition chamber |
US6170428B1 (en) | 1996-07-15 | 2001-01-09 | Applied Materials, Inc. | Symmetric tunable inductively coupled HDP-CVD reactor |
US5781693A (en) | 1996-07-24 | 1998-07-14 | Applied Materials, Inc. | Gas introduction showerhead for an RTP chamber with upper and lower transparent plates and gas flow therebetween |
US5661093A (en) | 1996-09-12 | 1997-08-26 | Applied Materials, Inc. | Method for the stabilization of halogen-doped films through the use of multiple sealing layers |
US5888906A (en) | 1996-09-16 | 1999-03-30 | Micron Technology, Inc. | Plasmaless dry contact cleaning method using interhalogen compounds |
US5747373A (en) | 1996-09-24 | 1998-05-05 | Taiwan Semiconductor Manufacturing Company Ltd. | Nitride-oxide sidewall spacer for salicide formation |
US5846375A (en) | 1996-09-26 | 1998-12-08 | Micron Technology, Inc. | Area specific temperature control for electrode plates and chucks used in semiconductor processing equipment |
US5835334A (en) | 1996-09-30 | 1998-11-10 | Lam Research | Variable high temperature chuck for high density plasma chemical vapor deposition |
US5904827A (en) | 1996-10-15 | 1999-05-18 | Reynolds Tech Fabricators, Inc. | Plating cell with rotary wiper and megasonic transducer |
US6308654B1 (en) | 1996-10-18 | 2001-10-30 | Applied Materials, Inc. | Inductively coupled parallel-plate plasma reactor with a conical dome |
US5951776A (en) | 1996-10-25 | 1999-09-14 | Applied Materials, Inc. | Self aligning lift mechanism |
KR100237825B1 (ko) | 1996-11-05 | 2000-01-15 | 윤종용 | 반도체장치 제조설비의 페디스탈 |
US5804259A (en) | 1996-11-07 | 1998-09-08 | Applied Materials, Inc. | Method and apparatus for depositing a multilayered low dielectric constant film |
US5939831A (en) | 1996-11-13 | 1999-08-17 | Applied Materials, Inc. | Methods and apparatus for pre-stabilized plasma generation for microwave clean applications |
US5935340A (en) | 1996-11-13 | 1999-08-10 | Applied Materials, Inc. | Method and apparatus for gettering fluorine from chamber material surfaces |
US5968587A (en) | 1996-11-13 | 1999-10-19 | Applied Materials, Inc. | Systems and methods for controlling the temperature of a vapor deposition apparatus |
US5935334A (en) | 1996-11-13 | 1999-08-10 | Applied Materials, Inc. | Substrate processing apparatus with bottom-mounted remote plasma system |
US5994209A (en) | 1996-11-13 | 1999-11-30 | Applied Materials, Inc. | Methods and apparatus for forming ultra-shallow doped regions using doped silicon oxide films |
US6114216A (en) | 1996-11-13 | 2000-09-05 | Applied Materials, Inc. | Methods for shallow trench isolation |
US5963840A (en) | 1996-11-13 | 1999-10-05 | Applied Materials, Inc. | Methods for depositing premetal dielectric layer at sub-atmospheric and high temperature conditions |
US6019848A (en) | 1996-11-13 | 2000-02-01 | Applied Materials, Inc. | Lid assembly for high temperature processing chamber |
US5812403A (en) | 1996-11-13 | 1998-09-22 | Applied Materials, Inc. | Methods and apparatus for cleaning surfaces in a substrate processing system |
US5873781A (en) | 1996-11-14 | 1999-02-23 | Bally Gaming International, Inc. | Gaming machine having truly random results |
US5882786A (en) | 1996-11-15 | 1999-03-16 | C3, Inc. | Gemstones formed of silicon carbide with diamond coating |
US5844195A (en) | 1996-11-18 | 1998-12-01 | Applied Materials, Inc. | Remote plasma source |
US5855681A (en) | 1996-11-18 | 1999-01-05 | Applied Materials, Inc. | Ultra high throughput wafer vacuum processing system |
US6152070A (en) | 1996-11-18 | 2000-11-28 | Applied Materials, Inc. | Tandem process chamber |
US5830805A (en) | 1996-11-18 | 1998-11-03 | Cornell Research Foundation | Electroless deposition equipment or apparatus and method of performing electroless deposition |
US5695810A (en) | 1996-11-20 | 1997-12-09 | Cornell Research Foundation, Inc. | Use of cobalt tungsten phosphide as a barrier material for copper metallization |
FR2756663B1 (fr) | 1996-12-04 | 1999-02-26 | Berenguer Marc | Procede de traitement d'un substrat semi-conducteur comprenant une etape de traitement de surface |
US5951896A (en) | 1996-12-04 | 1999-09-14 | Micro C Technologies, Inc. | Rapid thermal processing heater technology and method of use |
JPH10172792A (ja) | 1996-12-05 | 1998-06-26 | Tokyo Electron Ltd | プラズマ処理装置 |
US6312554B1 (en) | 1996-12-05 | 2001-11-06 | Applied Materials, Inc. | Apparatus and method for controlling the ratio of reactive to non-reactive ions in a semiconductor wafer processing chamber |
US5843538A (en) | 1996-12-09 | 1998-12-01 | John L. Raymond | Method for electroless nickel plating of metal substrates |
US5953635A (en) | 1996-12-19 | 1999-09-14 | Intel Corporation | Interlayer dielectric with a composite dielectric stack |
US5948702A (en) | 1996-12-19 | 1999-09-07 | Texas Instruments Incorporated | Selective removal of TixNy |
US6120640A (en) | 1996-12-19 | 2000-09-19 | Applied Materials, Inc. | Boron carbide parts and coatings in a plasma reactor |
KR100234539B1 (ko) | 1996-12-24 | 1999-12-15 | 윤종용 | 반도체장치 제조용 식각 장치 |
US5788825A (en) | 1996-12-30 | 1998-08-04 | Samsung Electronics Co., Ltd. | Vacuum pumping system for a sputtering device |
US5955037A (en) | 1996-12-31 | 1999-09-21 | Atmi Ecosys Corporation | Effluent gas stream treatment system having utility for oxidation treatment of semiconductor manufacturing effluent gases |
DE19700231C2 (de) | 1997-01-07 | 2001-10-04 | Geesthacht Gkss Forschung | Vorrichtung zum Filtern und Trennen von Strömungsmedien |
US5913147A (en) | 1997-01-21 | 1999-06-15 | Advanced Micro Devices, Inc. | Method for fabricating copper-aluminum metallization |
US5882424A (en) | 1997-01-21 | 1999-03-16 | Applied Materials, Inc. | Plasma cleaning of a CVD or etch reactor using a low or mixed frequency excitation field |
JPH10223608A (ja) | 1997-02-04 | 1998-08-21 | Sony Corp | 半導体装置の製造方法 |
US5800621A (en) | 1997-02-10 | 1998-09-01 | Applied Materials, Inc. | Plasma source for HDP-CVD chamber |
US6035101A (en) | 1997-02-12 | 2000-03-07 | Applied Materials, Inc. | High temperature multi-layered alloy heater assembly and related methods |
US6013584A (en) | 1997-02-19 | 2000-01-11 | Applied Materials, Inc. | Methods and apparatus for forming HDP-CVD PSG film used for advanced pre-metal dielectric layer applications |
US6190233B1 (en) | 1997-02-20 | 2001-02-20 | Applied Materials, Inc. | Method and apparatus for improving gap-fill capability using chemical and physical etchbacks |
US6479373B2 (en) | 1997-02-20 | 2002-11-12 | Infineon Technologies Ag | Method of structuring layers with a polysilicon layer and an overlying metal or metal silicide layer using a three step etching process with fluorine, chlorine, bromine containing gases |
US5990000A (en) | 1997-02-20 | 1999-11-23 | Applied Materials, Inc. | Method and apparatus for improving gap-fill capability using chemical and physical etchbacks |
DE19706682C2 (de) | 1997-02-20 | 1999-01-14 | Bosch Gmbh Robert | Anisotropes fluorbasiertes Plasmaätzverfahren für Silizium |
US6059643A (en) | 1997-02-21 | 2000-05-09 | Aplex, Inc. | Apparatus and method for polishing a flat surface using a belted polishing pad |
US6328803B2 (en) | 1997-02-21 | 2001-12-11 | Micron Technology, Inc. | Method and apparatus for controlling rate of pressure change in a vacuum process chamber |
JP4043089B2 (ja) * | 1997-02-24 | 2008-02-06 | 株式会社エフオーアイ | プラズマ処理装置 |
US6376386B1 (en) | 1997-02-25 | 2002-04-23 | Fujitsu Limited | Method of etching silicon nitride by a mixture of CH2 F2, CH3F or CHF3 and an inert gas |
US5789300A (en) | 1997-02-25 | 1998-08-04 | Advanced Micro Devices, Inc. | Method of making IGFETs in densely and sparsely populated areas of a substrate |
US6039834A (en) | 1997-03-05 | 2000-03-21 | Applied Materials, Inc. | Apparatus and methods for upgraded substrate processing system with microwave plasma source |
TW418461B (en) | 1997-03-07 | 2001-01-11 | Tokyo Electron Ltd | Plasma etching device |
US5850105A (en) | 1997-03-21 | 1998-12-15 | Advanced Micro Devices, Inc. | Substantially planar semiconductor topography using dielectrics and chemical mechanical polish |
TW376547B (en) | 1997-03-27 | 1999-12-11 | Matsushita Electric Ind Co Ltd | Method and apparatus for plasma processing |
US6030666A (en) | 1997-03-31 | 2000-02-29 | Lam Research Corporation | Method for microwave plasma substrate heating |
US5786276A (en) | 1997-03-31 | 1998-07-28 | Applied Materials, Inc. | Selective plasma etching of silicon nitride in presence of silicon or silicon oxides using mixture of CH3F or CH2F2 and CF4 and O2 |
US6017414A (en) | 1997-03-31 | 2000-01-25 | Lam Research Corporation | Method of and apparatus for detecting and controlling in situ cleaning time of vacuum processing chambers |
JPH10284360A (ja) | 1997-04-02 | 1998-10-23 | Hitachi Ltd | 基板温度制御装置及び方法 |
US5968610A (en) | 1997-04-02 | 1999-10-19 | United Microelectronics Corp. | Multi-step high density plasma chemical vapor deposition process |
US5866483A (en) | 1997-04-04 | 1999-02-02 | Applied Materials, Inc. | Method for anisotropically etching tungsten using SF6, CHF3, and N2 |
US6174450B1 (en) | 1997-04-16 | 2001-01-16 | Lam Research Corporation | Methods and apparatus for controlling ion energy and plasma density in a plasma processing system |
US6204200B1 (en) | 1997-05-05 | 2001-03-20 | Texas Instruments Incorporated | Process scheme to form controlled airgaps between interconnect lines to reduce capacitance |
US6149828A (en) | 1997-05-05 | 2000-11-21 | Micron Technology, Inc. | Supercritical etching compositions and method of using same |
US5969422A (en) | 1997-05-15 | 1999-10-19 | Advanced Micro Devices, Inc. | Plated copper interconnect structure |
US6189483B1 (en) | 1997-05-29 | 2001-02-20 | Applied Materials, Inc. | Process kit |
US6083344A (en) | 1997-05-29 | 2000-07-04 | Applied Materials, Inc. | Multi-zone RF inductively coupled source configuration |
US6136685A (en) | 1997-06-03 | 2000-10-24 | Applied Materials, Inc. | High deposition rate recipe for low dielectric constant films |
US5937323A (en) | 1997-06-03 | 1999-08-10 | Applied Materials, Inc. | Sequencing of the recipe steps for the optimal low-k HDP-CVD processing |
US6706334B1 (en) | 1997-06-04 | 2004-03-16 | Tokyo Electron Limited | Processing method and apparatus for removing oxide film |
US5872058A (en) | 1997-06-17 | 1999-02-16 | Novellus Systems, Inc. | High aspect ratio gapfill process by using HDP |
US5885749A (en) | 1997-06-20 | 1999-03-23 | Clear Logic, Inc. | Method of customizing integrated circuits by selective secondary deposition of layer interconnect material |
US5933757A (en) | 1997-06-23 | 1999-08-03 | Lsi Logic Corporation | Etch process selective to cobalt silicide for formation of integrated circuit structures |
US6150628A (en) | 1997-06-26 | 2000-11-21 | Applied Science And Technology, Inc. | Toroidal low-field reactive gas source |
US6815633B1 (en) | 1997-06-26 | 2004-11-09 | Applied Science & Technology, Inc. | Inductively-coupled toroidal plasma source |
US6518155B1 (en) | 1997-06-30 | 2003-02-11 | Intel Corporation | Device structure and method for reducing silicide encroachment |
US6184121B1 (en) | 1997-07-10 | 2001-02-06 | International Business Machines Corporation | Chip interconnect wiring structure with low dielectric constant insulator and methods for fabricating the same |
US5944049A (en) | 1997-07-15 | 1999-08-31 | Applied Materials, Inc. | Apparatus and method for regulating a pressure in a chamber |
JPH1136076A (ja) | 1997-07-16 | 1999-02-09 | Tokyo Electron Ltd | Cvd成膜装置およびcvd成膜方法 |
US6007635A (en) | 1997-11-26 | 1999-12-28 | Micro C Technologies, Inc. | Platform for supporting a semiconductor substrate and method of supporting a substrate during rapid high temperature processing |
US5814365A (en) | 1997-08-15 | 1998-09-29 | Micro C Technologies, Inc. | Reactor and method of processing a semiconductor substate |
US6090212A (en) | 1997-08-15 | 2000-07-18 | Micro C Technologies, Inc. | Substrate platform for a semiconductor substrate during rapid high temperature processing and method of supporting a substrate |
US5926737A (en) | 1997-08-19 | 1999-07-20 | Tokyo Electron Limited | Use of TiCl4 etchback process during integrated CVD-Ti/TiN wafer processing |
US6258170B1 (en) | 1997-09-11 | 2001-07-10 | Applied Materials, Inc. | Vaporization and deposition apparatus |
US6063688A (en) | 1997-09-29 | 2000-05-16 | Intel Corporation | Fabrication of deep submicron structures and quantum wire transistors using hard-mask transistor width definition |
US6161500A (en) | 1997-09-30 | 2000-12-19 | Tokyo Electron Limited | Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions |
US6364957B1 (en) | 1997-10-09 | 2002-04-02 | Applied Materials, Inc. | Support assembly with thermal expansion compensation |
US6688375B1 (en) | 1997-10-14 | 2004-02-10 | Applied Materials, Inc. | Vacuum processing system having improved substrate heating and cooling |
GB9722028D0 (en) | 1997-10-17 | 1997-12-17 | Shipley Company Ll C | Plating of polymers |
US6379575B1 (en) | 1997-10-21 | 2002-04-30 | Applied Materials, Inc. | Treatment of etching chambers using activated cleaning gas |
US6136693A (en) | 1997-10-27 | 2000-10-24 | Chartered Semiconductor Manufacturing Ltd. | Method for planarized interconnect vias using electroless plating and CMP |
US6013191A (en) | 1997-10-27 | 2000-01-11 | Advanced Refractory Technologies, Inc. | Method of polishing CVD diamond films by oxygen plasma |
US6063712A (en) | 1997-11-25 | 2000-05-16 | Micron Technology, Inc. | Oxide etch and method of etching |
US5849639A (en) | 1997-11-26 | 1998-12-15 | Lucent Technologies Inc. | Method for removing etching residues and contaminants |
US6136165A (en) | 1997-11-26 | 2000-10-24 | Cvc Products, Inc. | Apparatus for inductively-coupled-plasma-enhanced ionized physical-vapor deposition |
US6079356A (en) | 1997-12-02 | 2000-06-27 | Applied Materials, Inc. | Reactor optimized for chemical vapor deposition of titanium |
US6077780A (en) | 1997-12-03 | 2000-06-20 | Advanced Micro Devices, Inc. | Method for filling high aspect ratio openings of an integrated circuit to minimize electromigration failure |
US6143476A (en) | 1997-12-12 | 2000-11-07 | Applied Materials Inc | Method for high temperature etching of patterned layers using an organic mask stack |
US5976327A (en) | 1997-12-12 | 1999-11-02 | Applied Materials, Inc. | Step coverage and overhang improvement by pedestal bias voltage modulation |
US6083844A (en) | 1997-12-22 | 2000-07-04 | Lam Research Corporation | Techniques for etching an oxide layer |
US6415858B1 (en) | 1997-12-31 | 2002-07-09 | Temptronic Corporation | Temperature control system for a workpiece chuck |
US6406759B1 (en) | 1998-01-08 | 2002-06-18 | The University Of Tennessee Research Corporation | Remote exposure of workpieces using a recirculated plasma |
US6140234A (en) | 1998-01-20 | 2000-10-31 | International Business Machines Corporation | Method to selectively fill recesses with conductive metal |
US5932077A (en) | 1998-02-09 | 1999-08-03 | Reynolds Tech Fabricators, Inc. | Plating cell with horizontal product load mechanism |
US6074514A (en) | 1998-02-09 | 2000-06-13 | Applied Materials, Inc. | High selectivity etch using an external plasma discharge |
US6635578B1 (en) | 1998-02-09 | 2003-10-21 | Applied Materials, Inc | Method of operating a dual chamber reactor with neutral density decoupled from ion density |
US6340435B1 (en) | 1998-02-11 | 2002-01-22 | Applied Materials, Inc. | Integrated low K dielectrics and etch stops |
US6627532B1 (en) | 1998-02-11 | 2003-09-30 | Applied Materials, Inc. | Method of decreasing the K value in SiOC layer deposited by chemical vapor deposition |
US6186091B1 (en) | 1998-02-11 | 2001-02-13 | Silicon Genesis Corporation | Shielded platen design for plasma immersion ion implantation |
US6054379A (en) | 1998-02-11 | 2000-04-25 | Applied Materials, Inc. | Method of depositing a low k dielectric with organo silane |
US6197688B1 (en) | 1998-02-12 | 2001-03-06 | Motorola Inc. | Interconnect structure in a semiconductor device and method of formation |
US6171661B1 (en) | 1998-02-25 | 2001-01-09 | Applied Materials, Inc. | Deposition of copper with increased adhesion |
US6892669B2 (en) | 1998-02-26 | 2005-05-17 | Anelva Corporation | CVD apparatus |
JP4151862B2 (ja) | 1998-02-26 | 2008-09-17 | キヤノンアネルバ株式会社 | Cvd装置 |
US6177222B1 (en) | 1998-03-12 | 2001-01-23 | Xerox Corporation | Coated photographic papers |
US6551939B2 (en) | 1998-03-17 | 2003-04-22 | Anneal Corporation | Plasma surface treatment method and resulting device |
US5920792A (en) | 1998-03-19 | 1999-07-06 | Winbond Electronics Corp | High density plasma enhanced chemical vapor deposition process in combination with chemical mechanical polishing process for preparation and planarization of intemetal dielectric layers |
US6565729B2 (en) | 1998-03-20 | 2003-05-20 | Semitool, Inc. | Method for electrochemically depositing metal on a semiconductor workpiece |
US6194038B1 (en) | 1998-03-20 | 2001-02-27 | Applied Materials, Inc. | Method for deposition of a conformal layer on a substrate |
US6197181B1 (en) | 1998-03-20 | 2001-03-06 | Semitool, Inc. | Apparatus and method for electrolytically depositing a metal on a microelectronic workpiece |
US6602434B1 (en) | 1998-03-27 | 2003-08-05 | Applied Materials, Inc. | Process for etching oxide using hexafluorobutadiene or related fluorocarbons and manifesting a wide process window |
US6203657B1 (en) | 1998-03-31 | 2001-03-20 | Lam Research Corporation | Inductively coupled plasma downstream strip module |
US6395150B1 (en) | 1998-04-01 | 2002-05-28 | Novellus Systems, Inc. | Very high aspect ratio gapfill using HDP |
WO1999052135A1 (en) | 1998-04-02 | 1999-10-14 | Applied Materials, Inc. | Method for etching low k dielectrics |
US6198616B1 (en) | 1998-04-03 | 2001-03-06 | Applied Materials, Inc. | Method and apparatus for supplying a chucking voltage to an electrostatic chuck within a semiconductor wafer processing system |
US6174810B1 (en) | 1998-04-06 | 2001-01-16 | Motorola, Inc. | Copper interconnect structure and method of formation |
US6117245A (en) | 1998-04-08 | 2000-09-12 | Applied Materials, Inc. | Method and apparatus for controlling cooling and heating fluids for a gas distribution plate |
US5997649A (en) | 1998-04-09 | 1999-12-07 | Tokyo Electron Limited | Stacked showerhead assembly for delivering gases and RF power to a reaction chamber |
US6113771A (en) | 1998-04-21 | 2000-09-05 | Applied Materials, Inc. | Electro deposition chemistry |
US6416647B1 (en) | 1998-04-21 | 2002-07-09 | Applied Materials, Inc. | Electro-chemical deposition cell for face-up processing of single semiconductor substrates |
US6179924B1 (en) | 1998-04-28 | 2001-01-30 | Applied Materials, Inc. | Heater for use in substrate processing apparatus to deposit tungsten |
US6093594A (en) | 1998-04-29 | 2000-07-25 | Advanced Micro Devices, Inc. | CMOS optimization method utilizing sacrificial sidewall spacer |
US6081414A (en) | 1998-05-01 | 2000-06-27 | Applied Materials, Inc. | Apparatus for improved biasing and retaining of a workpiece in a workpiece processing system |
US6030881A (en) | 1998-05-05 | 2000-02-29 | Novellus Systems, Inc. | High throughput chemical vapor deposition process capable of filling high aspect ratio structures |
US6218288B1 (en) | 1998-05-11 | 2001-04-17 | Micron Technology, Inc. | Multiple step methods for forming conformal layers |
US6509283B1 (en) | 1998-05-13 | 2003-01-21 | National Semiconductor Corporation | Thermal oxidation method utilizing atomic oxygen to reduce dangling bonds in silicon dioxide grown on silicon |
US6007785A (en) | 1998-05-20 | 1999-12-28 | Academia Sinica | Apparatus for efficient ozone generation |
US6086677A (en) | 1998-06-16 | 2000-07-11 | Applied Materials, Inc. | Dual gas faceplate for a showerhead in a semiconductor wafer processing system |
US6148761A (en) | 1998-06-16 | 2000-11-21 | Applied Materials, Inc. | Dual channel gas distribution plate |
KR100296137B1 (ko) | 1998-06-16 | 2001-08-07 | 박종섭 | 보호막으로서고밀도플라즈마화학기상증착에의한절연막을갖는반도체소자제조방법 |
US6147009A (en) | 1998-06-29 | 2000-11-14 | International Business Machines Corporation | Hydrogenated oxidized silicon carbon material |
EP1112125B1 (en) | 1998-06-30 | 2006-01-25 | Semitool, Inc. | Metallization structures for microelectronic applications and process for forming the structures |
US6562128B1 (en) | 2001-11-28 | 2003-05-13 | Seh America, Inc. | In-situ post epitaxial treatment process |
US6037018A (en) | 1998-07-01 | 2000-03-14 | Taiwan Semiconductor Maufacturing Company | Shallow trench isolation filled by high density plasma chemical vapor deposition |
US6248429B1 (en) | 1998-07-06 | 2001-06-19 | Micron Technology, Inc. | Metallized recess in a substrate |
JP2000026975A (ja) | 1998-07-09 | 2000-01-25 | Komatsu Ltd | 表面処理装置 |
KR100265866B1 (ko) | 1998-07-11 | 2000-12-01 | 황철주 | 반도체 제조장치 |
US6182603B1 (en) | 1998-07-13 | 2001-02-06 | Applied Komatsu Technology, Inc. | Surface-treated shower head for use in a substrate processing chamber |
US6063683A (en) | 1998-07-27 | 2000-05-16 | Acer Semiconductor Manufacturing, Inc. | Method of fabricating a self-aligned crown-shaped capacitor for high density DRAM cells |
US6436816B1 (en) | 1998-07-31 | 2002-08-20 | Industrial Technology Research Institute | Method of electroless plating copper on nitride barrier |
US6162370A (en) | 1998-08-28 | 2000-12-19 | Ashland Inc. | Composition and method for selectively etching a silicon nitride film |
US6383951B1 (en) | 1998-09-03 | 2002-05-07 | Micron Technology, Inc. | Low dielectric constant material for integrated circuit fabrication |
US6440863B1 (en) | 1998-09-04 | 2002-08-27 | Taiwan Semiconductor Manufacturing Company | Plasma etch method for forming patterned oxygen containing plasma etchable layer |
US6165912A (en) | 1998-09-17 | 2000-12-26 | Cfmt, Inc. | Electroless metal deposition of electronic components in an enclosable vessel |
US6037266A (en) | 1998-09-28 | 2000-03-14 | Taiwan Semiconductor Manufacturing Company | Method for patterning a polysilicon gate with a thin gate oxide in a polysilicon etcher |
JP3725708B2 (ja) | 1998-09-29 | 2005-12-14 | 株式会社東芝 | 半導体装置 |
US6277733B1 (en) | 1998-10-05 | 2001-08-21 | Texas Instruments Incorporated | Oxygen-free, dry plasma process for polymer removal |
JP3764594B2 (ja) | 1998-10-12 | 2006-04-12 | 株式会社日立製作所 | プラズマ処理方法 |
US6180523B1 (en) | 1998-10-13 | 2001-01-30 | Industrial Technology Research Institute | Copper metallization of USLI by electroless process |
US6228758B1 (en) | 1998-10-14 | 2001-05-08 | Advanced Micro Devices, Inc. | Method of making dual damascene conductive interconnections and integrated circuit device comprising same |
US6251802B1 (en) | 1998-10-19 | 2001-06-26 | Micron Technology, Inc. | Methods of forming carbon-containing layers |
US6107199A (en) | 1998-10-24 | 2000-08-22 | International Business Machines Corporation | Method for improving the morphology of refractory metal thin films |
JP3064268B2 (ja) | 1998-10-29 | 2000-07-12 | アプライド マテリアルズ インコーポレイテッド | 成膜方法及び装置 |
US6176198B1 (en) | 1998-11-02 | 2001-01-23 | Applied Materials, Inc. | Apparatus and method for depositing low K dielectric materials |
US6462371B1 (en) | 1998-11-24 | 2002-10-08 | Micron Technology Inc. | Films doped with carbon for use in integrated circuit technology |
US6203863B1 (en) | 1998-11-27 | 2001-03-20 | United Microelectronics Corp. | Method of gap filling |
US6228233B1 (en) | 1998-11-30 | 2001-05-08 | Applied Materials, Inc. | Inflatable compliant bladder assembly |
US6258220B1 (en) | 1998-11-30 | 2001-07-10 | Applied Materials, Inc. | Electro-chemical deposition system |
US6251236B1 (en) | 1998-11-30 | 2001-06-26 | Applied Materials, Inc. | Cathode contact ring for electrochemical deposition |
US6015747A (en) | 1998-12-07 | 2000-01-18 | Advanced Micro Device | Method of metal/polysilicon gate formation in a field effect transistor |
US6242349B1 (en) | 1998-12-09 | 2001-06-05 | Advanced Micro Devices, Inc. | Method of forming copper/copper alloy interconnection with reduced electromigration |
US6364954B2 (en) | 1998-12-14 | 2002-04-02 | Applied Materials, Inc. | High temperature chemical vapor deposition chamber |
EP1014434B1 (de) | 1998-12-24 | 2008-03-26 | ATMEL Germany GmbH | Verfahren zum anisotropen plasmachemischen Trockenätzen von Siliziumnitrid-Schichten mittels eines Fluor-enthaltenden Gasgemisches |
DE19901210A1 (de) | 1999-01-14 | 2000-07-27 | Siemens Ag | Halbleiterbauelement und Verfahren zu dessen Herstellung |
US6499425B1 (en) | 1999-01-22 | 2002-12-31 | Micron Technology, Inc. | Quasi-remote plasma processing method and apparatus |
TW428256B (en) | 1999-01-25 | 2001-04-01 | United Microelectronics Corp | Structure of conducting-wire layer and its fabricating method |
JP3330554B2 (ja) | 1999-01-27 | 2002-09-30 | 松下電器産業株式会社 | エッチング方法 |
US6245669B1 (en) | 1999-02-05 | 2001-06-12 | Taiwan Semiconductor Manufacturing Company | High selectivity Si-rich SiON etch-stop layer |
US6740247B1 (en) | 1999-02-05 | 2004-05-25 | Massachusetts Institute Of Technology | HF vapor phase wafer cleaning and oxide etching |
US6010962A (en) | 1999-02-12 | 2000-01-04 | Taiwan Semiconductor Manufacturing Company | Copper chemical-mechanical-polishing (CMP) dishing |
US6245670B1 (en) | 1999-02-19 | 2001-06-12 | Advanced Micro Devices, Inc. | Method for filling a dual damascene opening having high aspect ratio to minimize electromigration failure |
TW469534B (en) | 1999-02-23 | 2001-12-21 | Matsushita Electric Ind Co Ltd | Plasma processing method and apparatus |
US6291282B1 (en) | 1999-02-26 | 2001-09-18 | Texas Instruments Incorporated | Method of forming dual metal gate structures or CMOS devices |
US6136163A (en) | 1999-03-05 | 2000-10-24 | Applied Materials, Inc. | Apparatus for electro-chemical deposition with thermal anneal chamber |
US6312995B1 (en) | 1999-03-08 | 2001-11-06 | Advanced Micro Devices, Inc. | MOS transistor with assisted-gates and ultra-shallow “Psuedo” source and drain extensions for ultra-large-scale integration |
US6197705B1 (en) | 1999-03-18 | 2001-03-06 | Chartered Semiconductor Manufacturing Ltd. | Method of silicon oxide and silicon glass films deposition |
US6797189B2 (en) | 1999-03-25 | 2004-09-28 | Hoiman (Raymond) Hung | Enhancement of silicon oxide etch rate and nitride selectivity using hexafluorobutadiene or other heavy perfluorocarbon |
US6144099A (en) | 1999-03-30 | 2000-11-07 | Advanced Micro Devices, Inc. | Semiconductor metalization barrier |
US6238582B1 (en) | 1999-03-30 | 2001-05-29 | Veeco Instruments, Inc. | Reactive ion beam etching method and a thin film head fabricated using the method |
JP2000290777A (ja) | 1999-04-07 | 2000-10-17 | Tokyo Electron Ltd | ガス処理装置、バッフル部材、及びガス処理方法 |
US6263830B1 (en) | 1999-04-12 | 2001-07-24 | Matrix Integrated Systems, Inc. | Microwave choke for remote plasma generator |
US6099697A (en) | 1999-04-13 | 2000-08-08 | Applied Materials, Inc. | Method of and apparatus for restoring a support surface in a semiconductor wafer processing system |
US6110836A (en) | 1999-04-22 | 2000-08-29 | Applied Materials, Inc. | Reactive plasma etch cleaning of high aspect ratio openings |
US6110832A (en) | 1999-04-28 | 2000-08-29 | International Business Machines Corporation | Method and apparatus for slurry polishing |
US6541671B1 (en) | 2002-02-13 | 2003-04-01 | The Regents Of The University Of California | Synthesis of 2H- and 13C-substituted dithanes |
US6310755B1 (en) | 1999-05-07 | 2001-10-30 | Applied Materials, Inc. | Electrostatic chuck having gas cavity and method |
JP3099066B1 (ja) | 1999-05-07 | 2000-10-16 | 東京工業大学長 | 薄膜構造体の製造方法 |
JP3482904B2 (ja) | 1999-05-10 | 2004-01-06 | 松下電器産業株式会社 | プラズマ処理方法及び装置 |
US7091605B2 (en) | 2001-09-21 | 2006-08-15 | Eastman Kodak Company | Highly moisture-sensitive electronic device element and method for fabrication |
US6129829A (en) | 1999-05-14 | 2000-10-10 | Thompson; Donald E. | Electrostatic filter for dielectric fluid |
WO2000070117A1 (en) | 1999-05-14 | 2000-11-23 | The Regents Of The University Of California | Low-temperature compatible wide-pressure-range plasma flow device |
JP2000331993A (ja) | 1999-05-19 | 2000-11-30 | Mitsubishi Electric Corp | プラズマ処理装置 |
KR100416308B1 (ko) | 1999-05-26 | 2004-01-31 | 동경 엘렉트론 주식회사 | 플라즈마 처리 장치 |
US6323128B1 (en) | 1999-05-26 | 2001-11-27 | International Business Machines Corporation | Method for forming Co-W-P-Au films |
JP3320685B2 (ja) | 1999-06-02 | 2002-09-03 | 株式会社半導体先端テクノロジーズ | 微細パターン形成方法 |
US6916399B1 (en) | 1999-06-03 | 2005-07-12 | Applied Materials Inc | Temperature controlled window with a fluid supply system |
US6565661B1 (en) | 1999-06-04 | 2003-05-20 | Simplus Systems Corporation | High flow conductance and high thermal conductance showerhead system and method |
US20020033233A1 (en) | 1999-06-08 | 2002-03-21 | Stephen E. Savas | Icp reactor having a conically-shaped plasma-generating section |
US6174812B1 (en) | 1999-06-08 | 2001-01-16 | United Microelectronics Corp. | Copper damascene technology for ultra large scale integration circuits |
US6367413B1 (en) | 1999-06-15 | 2002-04-09 | Tokyo Electron Limited | Apparatus for monitoring substrate biasing during plasma processing of a substrate |
US6821571B2 (en) | 1999-06-18 | 2004-11-23 | Applied Materials Inc. | Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers |
US6161576A (en) | 1999-06-23 | 2000-12-19 | Mks Instruments, Inc. | Integrated turbo pump and control valve system |
US6110530A (en) | 1999-06-25 | 2000-08-29 | Applied Materials, Inc. | CVD method of depositing copper films by using improved organocopper precursor blend |
FR2795555B1 (fr) | 1999-06-28 | 2002-12-13 | France Telecom | Procede de fabrication d'un dispositif semi-conducteur comprenant un empilement forme alternativement de couches de silicium et de couches de materiau dielectrique |
US6277752B1 (en) | 1999-06-28 | 2001-08-21 | Taiwan Semiconductor Manufacturing Company | Multiple etch method for forming residue free patterned hard mask layer |
US6245192B1 (en) | 1999-06-30 | 2001-06-12 | Lam Research Corporation | Gas distribution apparatus for semiconductor processing |
US6415736B1 (en) | 1999-06-30 | 2002-07-09 | Lam Research Corporation | Gas distribution apparatus for semiconductor processing |
US6258223B1 (en) | 1999-07-09 | 2001-07-10 | Applied Materials, Inc. | In-situ electroless copper seed layer enhancement in an electroplating system |
US6516815B1 (en) | 1999-07-09 | 2003-02-11 | Applied Materials, Inc. | Edge bead removal/spin rinse dry (EBR/SRD) module |
US6352081B1 (en) | 1999-07-09 | 2002-03-05 | Applied Materials, Inc. | Method of cleaning a semiconductor device processing chamber after a copper etch process |
US6351013B1 (en) | 1999-07-13 | 2002-02-26 | Advanced Micro Devices, Inc. | Low-K sub spacer pocket formation for gate capacitance reduction |
US6342733B1 (en) | 1999-07-27 | 2002-01-29 | International Business Machines Corporation | Reduced electromigration and stressed induced migration of Cu wires by surface coating |
US6281135B1 (en) | 1999-08-05 | 2001-08-28 | Axcelis Technologies, Inc. | Oxygen free plasma stripping process |
US6237527B1 (en) | 1999-08-06 | 2001-05-29 | Axcelis Technologies, Inc. | System for improving energy purity and implant consistency, and for minimizing charge accumulation of an implanted substrate |
US6235643B1 (en) | 1999-08-10 | 2001-05-22 | Applied Materials, Inc. | Method for etching a trench having rounded top and bottom corners in a silicon substrate |
WO2001012873A1 (en) | 1999-08-17 | 2001-02-22 | Tokyo Electron Limited | Pulsed plasma processing method and apparatus |
US6602806B1 (en) | 1999-08-17 | 2003-08-05 | Applied Materials, Inc. | Thermal CVD process for depositing a low dielectric constant carbon-doped silicon oxide film |
EP1077479A1 (en) | 1999-08-17 | 2001-02-21 | Applied Materials, Inc. | Post-deposition treatment to enchance properties of Si-O-C low K film |
ATE414326T1 (de) | 1999-08-17 | 2008-11-15 | Applied Materials Inc | Methode und apparat zur verbesserung der eigenschaften eines niedrig-k si-o-c filmes |
EP1077274A1 (en) | 1999-08-17 | 2001-02-21 | Applied Materials, Inc. | Lid cooling mechanism and method for optimized deposition of low-k dielectric using tri methylsilane-ozone based processes |
JP4220075B2 (ja) | 1999-08-20 | 2009-02-04 | 東京エレクトロン株式会社 | 成膜方法および成膜装置 |
US6322716B1 (en) | 1999-08-30 | 2001-11-27 | Cypress Semiconductor Corp. | Method for conditioning a plasma etch chamber |
US6375748B1 (en) | 1999-09-01 | 2002-04-23 | Applied Materials, Inc. | Method and apparatus for preventing edge deposition |
US6441492B1 (en) | 1999-09-10 | 2002-08-27 | James A. Cunningham | Diffusion barriers for copper interconnect systems |
US6548414B2 (en) | 1999-09-14 | 2003-04-15 | Infineon Technologies Ag | Method of plasma etching thin films of difficult to dry etch materials |
JP3514186B2 (ja) | 1999-09-16 | 2004-03-31 | 日新電機株式会社 | 薄膜形成方法及び装置 |
US6503843B1 (en) | 1999-09-21 | 2003-01-07 | Applied Materials, Inc. | Multistep chamber cleaning and film deposition process using a remote plasma that also enhances film gap fill |
US6432819B1 (en) | 1999-09-27 | 2002-08-13 | Applied Materials, Inc. | Method and apparatus of forming a sputtered doped seed layer |
US6153935A (en) | 1999-09-30 | 2000-11-28 | International Business Machines Corporation | Dual etch stop/diffusion barrier for damascene interconnects |
US6287643B1 (en) | 1999-09-30 | 2001-09-11 | Novellus Systems, Inc. | Apparatus and method for injecting and modifying gas concentration of a meta-stable or atomic species in a downstream plasma reactor |
US6321587B1 (en) | 1999-10-15 | 2001-11-27 | Radian International Llc | Solid state fluorine sensor system and method |
US6423284B1 (en) | 1999-10-18 | 2002-07-23 | Advanced Technology Materials, Inc. | Fluorine abatement using steam injection in oxidation treatment of semiconductor manufacturing effluent gases |
US6364949B1 (en) | 1999-10-19 | 2002-04-02 | Applied Materials, Inc. | 300 mm CVD chamber design for metal-organic thin film deposition |
KR100338768B1 (ko) | 1999-10-25 | 2002-05-30 | 윤종용 | 산화막 제거방법 및 산화막 제거를 위한 반도체 제조 장치 |
US20010041444A1 (en) | 1999-10-29 | 2001-11-15 | Jeffrey A. Shields | Tin contact barc for tungsten polished contacts |
DE29919142U1 (de) | 1999-10-30 | 2001-03-08 | Agrodyn Hochspannungstechnik GmbH, 33803 Steinhagen | Plasmadüse |
US6551924B1 (en) | 1999-11-02 | 2003-04-22 | International Business Machines Corporation | Post metalization chem-mech polishing dielectric etch |
JP3366301B2 (ja) | 1999-11-10 | 2003-01-14 | 日本電気株式会社 | プラズマcvd装置 |
US6162302A (en) | 1999-11-16 | 2000-12-19 | Agilent Technologies | Method of cleaning quartz substrates using conductive solutions |
US8114245B2 (en) | 1999-11-26 | 2012-02-14 | Tadahiro Ohmi | Plasma etching device |
US6599842B2 (en) | 1999-11-29 | 2003-07-29 | Applied Materials, Inc. | Method for rounding corners and removing damaged outer surfaces of a trench |
US6465350B1 (en) | 1999-11-29 | 2002-10-15 | Texas Instruments Incorporated | Aluminum nitride thin film formation on integrated circuits |
US6573194B2 (en) | 1999-11-29 | 2003-06-03 | Texas Instruments Incorporated | Method of growing surface aluminum nitride on aluminum films with low energy barrier |
AU2905901A (en) | 1999-11-30 | 2001-06-12 | Regents Of The University Of California, The | Method for producing fluorinated diamond-like carbon films |
US6342453B1 (en) | 1999-12-03 | 2002-01-29 | Applied Materials, Inc. | Method for CVD process control for enhancing device performance |
KR20010062209A (ko) | 1999-12-10 | 2001-07-07 | 히가시 데쓰로 | 고내식성 막이 내부에 형성된 챔버를 구비하는 처리 장치 |
JP3659101B2 (ja) | 1999-12-13 | 2005-06-15 | 富士ゼロックス株式会社 | 窒化物半導体素子及びその製造方法 |
JP4695238B2 (ja) | 1999-12-14 | 2011-06-08 | 東京エレクトロン株式会社 | 圧力制御方法 |
KR100385133B1 (ko) | 1999-12-16 | 2003-05-22 | 엘지전자 주식회사 | 교환기의 셀 다중화/역다중화 시스템 |
US6277763B1 (en) | 1999-12-16 | 2001-08-21 | Applied Materials, Inc. | Plasma processing of tungsten using a gas mixture comprising a fluorinated gas and oxygen |
US6225745B1 (en) | 1999-12-17 | 2001-05-01 | Axcelis Technologies, Inc. | Dual plasma source for plasma process chamber |
US6350697B1 (en) | 1999-12-22 | 2002-02-26 | Lam Research Corporation | Method of cleaning and conditioning plasma reaction chamber |
US6534809B2 (en) | 1999-12-22 | 2003-03-18 | Agilent Technologies, Inc. | Hardmask designs for dry etching FeRAM capacitor stacks |
AU2577001A (en) | 1999-12-22 | 2001-07-03 | Tokyo Electron Limited | Method and system for reducing damage to substrates during plasma processing with a resonator source |
US6238513B1 (en) | 1999-12-28 | 2001-05-29 | International Business Machines Corporation | Wafer lift assembly |
KR100767762B1 (ko) | 2000-01-18 | 2007-10-17 | 에이에스엠 저펜 가부시기가이샤 | 자가 세정을 위한 원격 플라즈마 소스를 구비한 cvd 반도체 공정장치 |
US6772827B2 (en) | 2000-01-20 | 2004-08-10 | Applied Materials, Inc. | Suspended gas distribution manifold for plasma chamber |
US6477980B1 (en) | 2000-01-20 | 2002-11-12 | Applied Materials, Inc. | Flexibly suspended gas distribution manifold for plasma chamber |
US6656831B1 (en) | 2000-01-26 | 2003-12-02 | Applied Materials, Inc. | Plasma-enhanced chemical vapor deposition of a metal nitride layer |
US6494959B1 (en) | 2000-01-28 | 2002-12-17 | Applied Materials, Inc. | Process and apparatus for cleaning a silicon surface |
JP3723712B2 (ja) | 2000-02-10 | 2005-12-07 | 株式会社日立国際電気 | 基板処理装置及び基板処理方法 |
US6743473B1 (en) | 2000-02-16 | 2004-06-01 | Applied Materials, Inc. | Chemical vapor deposition of barriers from novel precursors |
US6573030B1 (en) | 2000-02-17 | 2003-06-03 | Applied Materials, Inc. | Method for depositing an amorphous carbon layer |
TW580735B (en) | 2000-02-21 | 2004-03-21 | Hitachi Ltd | Plasma treatment apparatus and treating method of sample material |
US6350320B1 (en) | 2000-02-22 | 2002-02-26 | Applied Materials, Inc. | Heater for processing chamber |
US6319766B1 (en) | 2000-02-22 | 2001-11-20 | Applied Materials, Inc. | Method of tantalum nitride deposition by tantalum oxide densification |
US6391788B1 (en) | 2000-02-25 | 2002-05-21 | Applied Materials, Inc. | Two etchant etch method |
US6958098B2 (en) | 2000-02-28 | 2005-10-25 | Applied Materials, Inc. | Semiconductor wafer support lift-pin assembly |
JP2001319885A (ja) | 2000-03-02 | 2001-11-16 | Hitachi Kokusai Electric Inc | 基板処理装置及び半導体製造方法 |
JP3979791B2 (ja) | 2000-03-08 | 2007-09-19 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
KR100350056B1 (ko) | 2000-03-09 | 2002-08-24 | 삼성전자 주식회사 | 다마신 게이트 공정에서 자기정렬콘택패드 형성 방법 |
US6537707B1 (en) | 2000-03-15 | 2003-03-25 | Agilent Technologies, Inc. | Two-stage roughing and controlled deposition rates for fabricating laser ablation masks |
US6900596B2 (en) | 2002-07-09 | 2005-05-31 | Applied Materials, Inc. | Capacitively coupled plasma reactor with uniform radial distribution of plasma |
US6528751B1 (en) | 2000-03-17 | 2003-03-04 | Applied Materials, Inc. | Plasma reactor with overhead RF electrode tuned to the plasma |
US6527968B1 (en) | 2000-03-27 | 2003-03-04 | Applied Materials Inc. | Two-stage self-cleaning silicon etch process |
JP3433721B2 (ja) | 2000-03-28 | 2003-08-04 | ティーディーケイ株式会社 | ドライエッチング方法及び微細加工方法 |
JP4056195B2 (ja) | 2000-03-30 | 2008-03-05 | 株式会社ルネサステクノロジ | 半導体集積回路装置の製造方法 |
WO2001075188A2 (en) | 2000-03-30 | 2001-10-11 | Tokyo Electron Limited | Method of and apparatus for gas injection |
DE10016340C1 (de) | 2000-03-31 | 2001-12-06 | Promos Technologies Inc | Verfahren zur Herstellung von flaschenförmigen Tiefgräben zur Verwendung in Halbleitervorrichtungen |
US6558564B1 (en) | 2000-04-05 | 2003-05-06 | Applied Materials Inc. | Plasma energy control by inducing plasma instability |
JP2001355074A (ja) | 2000-04-10 | 2001-12-25 | Sony Corp | 無電解メッキ処理方法およびその装置 |
US7892974B2 (en) | 2000-04-11 | 2011-02-22 | Cree, Inc. | Method of forming vias in silicon carbide and resulting devices and circuits |
KR20010096229A (ko) | 2000-04-18 | 2001-11-07 | 황 철 주 | 반도체 소자의 극박막 형성장치 및 그 형성방법 |
US6762129B2 (en) | 2000-04-19 | 2004-07-13 | Matsushita Electric Industrial Co., Ltd. | Dry etching method, fabrication method for semiconductor device, and dry etching apparatus |
JP2001308023A (ja) | 2000-04-21 | 2001-11-02 | Tokyo Electron Ltd | 熱処理装置及び方法 |
JP2001313282A (ja) | 2000-04-28 | 2001-11-09 | Nec Corp | ドライエッチング方法 |
US6458718B1 (en) | 2000-04-28 | 2002-10-01 | Asm Japan K.K. | Fluorine-containing materials and processes |
US6387207B1 (en) | 2000-04-28 | 2002-05-14 | Applied Materials, Inc. | Integration of remote plasma generator with semiconductor processing chamber |
KR100367662B1 (ko) | 2000-05-02 | 2003-01-10 | 주식회사 셈테크놀러지 | 하이퍼서멀 중성입자 발생 장치 및 이를 채용하는 중성입자 처리 장치 |
JP3662472B2 (ja) | 2000-05-09 | 2005-06-22 | エム・エフエスアイ株式会社 | 基板表面の処理方法 |
EP1211725A4 (en) | 2000-05-10 | 2003-02-26 | Ibiden Co Ltd | ELECTROSTATIC CHUCK |
US6679981B1 (en) | 2000-05-11 | 2004-01-20 | Applied Materials, Inc. | Inductive plasma loop enhancing magnetron sputtering |
TWI228747B (en) | 2000-05-17 | 2005-03-01 | Tokyo Electron Ltd | Processing apparatus and the maintenance method, assembling mechanism and method of processing apparatus parts, and lock mechanism and the lock method |
JP3448737B2 (ja) | 2000-05-25 | 2003-09-22 | 住友重機械工業株式会社 | ウエハーチャック用冷却板及びウエハーチャック |
US6645585B2 (en) | 2000-05-30 | 2003-11-11 | Kyocera Corporation | Container for treating with corrosive-gas and plasma and method for manufacturing the same |
JP2002194547A (ja) | 2000-06-08 | 2002-07-10 | Applied Materials Inc | アモルファスカーボン層の堆積方法 |
KR20010111058A (ko) | 2000-06-09 | 2001-12-15 | 조셉 제이. 스위니 | 전체 영역 온도 제어 정전기 척 및 그 제조방법 |
US6603269B1 (en) | 2000-06-13 | 2003-08-05 | Applied Materials, Inc. | Resonant chamber applicator for remote plasma source |
US6509623B2 (en) | 2000-06-15 | 2003-01-21 | Newport Fab, Llc | Microelectronic air-gap structures and methods of forming the same |
US6391753B1 (en) | 2000-06-20 | 2002-05-21 | Advanced Micro Devices, Inc. | Process for forming gate conductors |
US6645550B1 (en) | 2000-06-22 | 2003-11-11 | Applied Materials, Inc. | Method of treating a substrate |
TW527436B (en) | 2000-06-23 | 2003-04-11 | Anelva Corp | Chemical vapor deposition system |
US6620723B1 (en) | 2000-06-27 | 2003-09-16 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
JP4371543B2 (ja) | 2000-06-29 | 2009-11-25 | 日本電気株式会社 | リモートプラズマcvd装置及び膜形成方法 |
US6303418B1 (en) | 2000-06-30 | 2001-10-16 | Chartered Semiconductor Manufacturing Ltd. | Method of fabricating CMOS devices featuring dual gate structures and a high dielectric constant gate insulator layer |
DE10032607B4 (de) | 2000-07-07 | 2004-08-12 | Leo Elektronenmikroskopie Gmbh | Teilchenstrahlgerät mit einer im Ultrahochvakuum zu betreibenden Teilchenquelle und kaskadenförmige Pumpanordnung für ein solches Teilchenstrahlgerät |
US6736987B1 (en) | 2000-07-12 | 2004-05-18 | Techbank Corporation | Silicon etching apparatus using XeF2 |
US6440870B1 (en) | 2000-07-12 | 2002-08-27 | Applied Materials, Inc. | Method of etching tungsten or tungsten nitride electrode gates in semiconductor structures |
US6794311B2 (en) | 2000-07-14 | 2004-09-21 | Applied Materials Inc. | Method and apparatus for treating low k dielectric layers to reduce diffusion |
KR100366623B1 (ko) | 2000-07-18 | 2003-01-09 | 삼성전자 주식회사 | 반도체 기판 또는 lcd 기판의 세정방법 |
US6764958B1 (en) | 2000-07-28 | 2004-07-20 | Applied Materials Inc. | Method of depositing dielectric films |
US6677242B1 (en) | 2000-08-12 | 2004-01-13 | Applied Materials Inc. | Integrated shallow trench isolation approach |
US6446572B1 (en) | 2000-08-18 | 2002-09-10 | Tokyo Electron Limited | Embedded plasma source for plasma density improvement |
US6800830B2 (en) | 2000-08-18 | 2004-10-05 | Hitachi Kokusai Electric, Inc. | Chemistry for boron diffusion barrier layer and method of application in semiconductor device fabrication |
US6335288B1 (en) | 2000-08-24 | 2002-01-01 | Applied Materials, Inc. | Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD |
US6459066B1 (en) | 2000-08-25 | 2002-10-01 | Board Of Regents, The University Of Texas System | Transmission line based inductively coupled plasma source with stable impedance |
US6372657B1 (en) | 2000-08-31 | 2002-04-16 | Micron Technology, Inc. | Method for selective etching of oxides |
JP2002075972A (ja) | 2000-09-04 | 2002-03-15 | Hitachi Ltd | 半導体装置の製造方法 |
JP4484345B2 (ja) | 2000-09-11 | 2010-06-16 | 東京エレクトロン株式会社 | 半導体装置及びその製造方法 |
US6465366B1 (en) | 2000-09-12 | 2002-10-15 | Applied Materials, Inc. | Dual frequency plasma enhanced chemical vapor deposition of silicon carbide layers |
JP4717295B2 (ja) | 2000-10-04 | 2011-07-06 | 株式会社半導体エネルギー研究所 | ドライエッチング装置及びエッチング方法 |
US6461974B1 (en) | 2000-10-06 | 2002-10-08 | Lam Research Corporation | High temperature tungsten etching process |
DK200001497A (da) | 2000-10-08 | 2002-04-09 | Scanavo As | Opbevaringsindretning for en databærer |
KR100375102B1 (ko) | 2000-10-18 | 2003-03-08 | 삼성전자주식회사 | 반도체 장치의 제조에서 화학 기상 증착 방법 및 이를수행하기 위한 장치 |
US6403491B1 (en) | 2000-11-01 | 2002-06-11 | Applied Materials, Inc. | Etch method using a dielectric etch chamber with expanded process window |
US6610362B1 (en) | 2000-11-20 | 2003-08-26 | Intel Corporation | Method of forming a carbon doped oxide layer on a substrate |
KR100382725B1 (ko) | 2000-11-24 | 2003-05-09 | 삼성전자주식회사 | 클러스터화된 플라즈마 장치에서의 반도체소자의 제조방법 |
AUPR179500A0 (en) | 2000-11-30 | 2000-12-21 | Saintech Pty Limited | Ion source |
US6291348B1 (en) | 2000-11-30 | 2001-09-18 | Advanced Micro Devices, Inc. | Method of forming Cu-Ca-O thin films on Cu surfaces in a chemical solution and semiconductor device thereby formed |
US6544340B2 (en) | 2000-12-08 | 2003-04-08 | Applied Materials, Inc. | Heater with detachable ceramic top plate |
US6448537B1 (en) | 2000-12-11 | 2002-09-10 | Eric Anton Nering | Single-wafer process chamber thermal convection processes |
US6461972B1 (en) | 2000-12-22 | 2002-10-08 | Lsi Logic Corporation | Integrated circuit fabrication dual plasma process with separate introduction of different gases into gas flow |
US6533910B2 (en) | 2000-12-29 | 2003-03-18 | Lam Research Corporation | Carbonitride coated component of semiconductor processing equipment and method of manufacturing thereof |
US6537429B2 (en) | 2000-12-29 | 2003-03-25 | Lam Research Corporation | Diamond coatings on reactor wall and method of manufacturing thereof |
US6500772B2 (en) | 2001-01-08 | 2002-12-31 | International Business Machines Corporation | Methods and materials for depositing films on semiconductor substrates |
US20020124867A1 (en) | 2001-01-08 | 2002-09-12 | Apl Co., Ltd. | Apparatus and method for surface cleaning using plasma |
FR2819341B1 (fr) | 2001-01-11 | 2003-06-27 | St Microelectronics Sa | Procede d'integration d'une cellule dram |
US6879981B2 (en) | 2001-01-16 | 2005-04-12 | Corigin Ltd. | Sharing live data with a non cooperative DBMS |
US6849854B2 (en) | 2001-01-18 | 2005-02-01 | Saintech Pty Ltd. | Ion source |
JP4644943B2 (ja) | 2001-01-23 | 2011-03-09 | 東京エレクトロン株式会社 | 処理装置 |
US6743732B1 (en) | 2001-01-26 | 2004-06-01 | Taiwan Semiconductor Manufacturing Company | Organic low K dielectric etch with NH3 chemistry |
US6893969B2 (en) | 2001-02-12 | 2005-05-17 | Lam Research Corporation | Use of ammonia for etching organic low-k dielectrics |
US6537733B2 (en) | 2001-02-23 | 2003-03-25 | Applied Materials, Inc. | Method of depositing low dielectric constant silicon carbide layers |
US6878206B2 (en) | 2001-07-16 | 2005-04-12 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
US6348407B1 (en) | 2001-03-15 | 2002-02-19 | Chartered Semiconductor Manufacturing Inc. | Method to improve adhesion of organic dielectrics in dual damascene interconnects |
JP3924483B2 (ja) | 2001-03-19 | 2007-06-06 | アイピーエス リミテッド | 化学気相蒸着装置 |
KR100423953B1 (ko) | 2001-03-19 | 2004-03-24 | 디지웨이브 테크놀러지스 주식회사 | 화학기상증착장치 |
JP5013353B2 (ja) | 2001-03-28 | 2012-08-29 | 隆 杉野 | 成膜方法及び成膜装置 |
US7084070B1 (en) | 2001-03-30 | 2006-08-01 | Lam Research Corporation | Treatment for corrosion in substrate processing |
US6670278B2 (en) | 2001-03-30 | 2003-12-30 | Lam Research Corporation | Method of plasma etching of silicon carbide |
US20020177321A1 (en) | 2001-03-30 | 2002-11-28 | Li Si Yi | Plasma etching of silicon carbide |
FR2823032B1 (fr) | 2001-04-03 | 2003-07-11 | St Microelectronics Sa | Resonateur electromecanique a poutre vibrante |
US20020144657A1 (en) | 2001-04-05 | 2002-10-10 | Chiang Tony P. | ALD reactor employing electrostatic chuck |
JP3707394B2 (ja) | 2001-04-06 | 2005-10-19 | ソニー株式会社 | 無電解メッキ方法 |
US6761796B2 (en) | 2001-04-06 | 2004-07-13 | Axcelis Technologies, Inc. | Method and apparatus for micro-jet enabled, low-energy ion generation transport in plasma processing |
US20030019428A1 (en) | 2001-04-28 | 2003-01-30 | Applied Materials, Inc. | Chemical vapor deposition chamber |
EP1391140B1 (en) | 2001-04-30 | 2012-10-10 | Lam Research Corporation | Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support |
US6914009B2 (en) | 2001-05-07 | 2005-07-05 | Applied Materials Inc | Method of making small transistor lengths |
US6740601B2 (en) | 2001-05-11 | 2004-05-25 | Applied Materials Inc. | HDP-CVD deposition process for filling high aspect ratio gaps |
US20020170678A1 (en) | 2001-05-18 | 2002-11-21 | Toshio Hayashi | Plasma processing apparatus |
US6717189B2 (en) | 2001-06-01 | 2004-04-06 | Ebara Corporation | Electroless plating liquid and semiconductor device |
US6506291B2 (en) | 2001-06-14 | 2003-01-14 | Applied Materials, Inc. | Substrate support with multilevel heat transfer mechanism |
JP2004533123A (ja) | 2001-06-14 | 2004-10-28 | マトソン テクノロジー インコーポレーテッド | 銅接続用の障壁エンハンスメント工程 |
US6573606B2 (en) | 2001-06-14 | 2003-06-03 | International Business Machines Corporation | Chip to wiring interface with single metal alloy layer applied to surface of copper interconnect |
US20060191637A1 (en) | 2001-06-21 | 2006-08-31 | John Zajac | Etching Apparatus and Process with Thickness and Uniformity Control |
US6685803B2 (en) | 2001-06-22 | 2004-02-03 | Applied Materials, Inc. | Plasma treatment of processing gases |
US6770166B1 (en) | 2001-06-29 | 2004-08-03 | Lam Research Corp. | Apparatus and method for radio frequency de-coupling and bias voltage control in a plasma reactor |
US20030000647A1 (en) | 2001-06-29 | 2003-01-02 | Applied Materials, Inc. | Substrate processing chamber |
US6596599B1 (en) | 2001-07-16 | 2003-07-22 | Taiwan Semiconductor Manufacturing Company | Gate stack for high performance sub-micron CMOS devices |
US20030029715A1 (en) | 2001-07-25 | 2003-02-13 | Applied Materials, Inc. | An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems |
US6846745B1 (en) | 2001-08-03 | 2005-01-25 | Novellus Systems, Inc. | High-density plasma process for filling high aspect ratio structures |
US6596654B1 (en) | 2001-08-24 | 2003-07-22 | Novellus Systems, Inc. | Gap fill for high aspect ratio structures |
JP3914452B2 (ja) | 2001-08-07 | 2007-05-16 | 株式会社ルネサステクノロジ | 半導体集積回路装置の製造方法 |
US6984288B2 (en) | 2001-08-08 | 2006-01-10 | Lam Research Corporation | Plasma processor in plasma confinement region within a vacuum chamber |
US7179556B2 (en) | 2001-08-10 | 2007-02-20 | Denso Corporation | Fuel cell system |
WO2003017359A1 (en) | 2001-08-13 | 2003-02-27 | Ebara Corporation | Semiconductor device and production method therefor, and plating solution |
US20030038305A1 (en) | 2001-08-21 | 2003-02-27 | Wasshuber Christoph A. | Method for manufacturing and structure of transistor with low-k spacer |
US6762127B2 (en) | 2001-08-23 | 2004-07-13 | Yves Pierre Boiteux | Etch process for dielectric materials comprising oxidized organo silane materials |
US6753506B2 (en) | 2001-08-23 | 2004-06-22 | Axcelis Technologies | System and method of fast ambient switching for rapid thermal processing |
US7199328B2 (en) | 2001-08-29 | 2007-04-03 | Tokyo Electron Limited | Apparatus and method for plasma processing |
WO2003018867A1 (en) | 2001-08-29 | 2003-03-06 | Applied Materials, Inc. | Semiconductor processing using an efficiently coupled gas source |
US6796314B1 (en) | 2001-09-07 | 2004-09-28 | Novellus Systems, Inc. | Using hydrogen gas in a post-etch radio frequency-plasma contact cleaning process |
KR100441297B1 (ko) | 2001-09-14 | 2004-07-23 | 주성엔지니어링(주) | 리모트 플라즈마를 이용하는 ccp형 pecvd장치 |
US20030054608A1 (en) | 2001-09-17 | 2003-03-20 | Vanguard International Semiconductor Corporation | Method for forming shallow trench isolation in semiconductor device |
US6555467B2 (en) | 2001-09-28 | 2003-04-29 | Sharp Laboratories Of America, Inc. | Method of making air gaps copper interconnect |
US6462372B1 (en) | 2001-10-09 | 2002-10-08 | Silicon-Based Technology Corp. | Scaled stack-gate flash memory device |
US6656837B2 (en) | 2001-10-11 | 2003-12-02 | Applied Materials, Inc. | Method of eliminating photoresist poisoning in damascene applications |
EP1302988A3 (de) | 2001-10-12 | 2007-01-24 | Bayer MaterialScience AG | Photovoltaik-Module mit einer thermoplastischen Schmelzklebeschicht sowie ein Verfahren zu ihrer Herstellung |
US6855906B2 (en) | 2001-10-16 | 2005-02-15 | Adam Alexander Brailove | Induction plasma reactor |
US20030072639A1 (en) | 2001-10-17 | 2003-04-17 | Applied Materials, Inc. | Substrate support |
KR100433091B1 (ko) | 2001-10-23 | 2004-05-28 | 주식회사 하이닉스반도체 | 반도체소자의 도전배선 형성방법 |
JP3759895B2 (ja) | 2001-10-24 | 2006-03-29 | 松下電器産業株式会社 | エッチング方法 |
US7780785B2 (en) | 2001-10-26 | 2010-08-24 | Applied Materials, Inc. | Gas delivery apparatus for atomic layer deposition |
US6916398B2 (en) | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
US20030087488A1 (en) | 2001-11-07 | 2003-05-08 | Tokyo Electron Limited | Inductively coupled plasma source for improved process uniformity |
JP4040284B2 (ja) | 2001-11-08 | 2008-01-30 | 住友大阪セメント株式会社 | プラズマ発生用電極内蔵型サセプタ及びその製造方法 |
JP2003158080A (ja) | 2001-11-22 | 2003-05-30 | Mitsubishi Electric Corp | 半導体製造装置、半導体製造装置における堆積物除去方法、および半導体装置の製造方法 |
KR100443121B1 (ko) | 2001-11-29 | 2004-08-04 | 삼성전자주식회사 | 반도체 공정의 수행 방법 및 반도체 공정 장치 |
US6794290B1 (en) | 2001-12-03 | 2004-09-21 | Novellus Systems, Inc. | Method of chemical modification of structure topography |
WO2003049173A1 (fr) | 2001-12-07 | 2003-06-12 | Tokyo Electron Limited | Procede de nitruration de film isolant, dispositif a semi-conducteur et son procede de production et dispositif et procede de traitement de surface |
JP4392852B2 (ja) | 2001-12-07 | 2010-01-06 | 東京エレクトロン株式会社 | プラズマ処理装置に用いられる排気リング機構及びプラズマ処理装置 |
US6905968B2 (en) | 2001-12-12 | 2005-06-14 | Applied Materials, Inc. | Process for selectively etching dielectric layers |
JP2006501634A (ja) | 2001-12-13 | 2006-01-12 | アプライド マテリアルズ インコーポレイテッド | 基板をエッチングするための方法及び装置 |
US6890850B2 (en) | 2001-12-14 | 2005-05-10 | Applied Materials, Inc. | Method of depositing dielectric materials in damascene applications |
US6605874B2 (en) | 2001-12-19 | 2003-08-12 | Intel Corporation | Method of making semiconductor device using an interconnect |
JP2005514762A (ja) | 2001-12-20 | 2005-05-19 | 東京エレクトロン株式会社 | 加工物をプラズマ処理するための磁気フィルタを備える方法および装置 |
US20030116439A1 (en) | 2001-12-21 | 2003-06-26 | International Business Machines Corporation | Method for forming encapsulated metal interconnect structures in semiconductor integrated circuit devices |
US20030116087A1 (en) | 2001-12-21 | 2003-06-26 | Nguyen Anh N. | Chamber hardware design for titanium nitride atomic layer deposition |
KR100442167B1 (ko) | 2001-12-26 | 2004-07-30 | 주성엔지니어링(주) | 자연산화막 제거방법 |
US20030124842A1 (en) | 2001-12-27 | 2003-07-03 | Applied Materials, Inc. | Dual-gas delivery system for chemical vapor deposition processes |
KR100484258B1 (ko) | 2001-12-27 | 2005-04-22 | 주식회사 하이닉스반도체 | 반도체 소자 제조 방법 |
US6828241B2 (en) | 2002-01-07 | 2004-12-07 | Applied Materials, Inc. | Efficient cleaning by secondary in-situ activation of etch precursor from remote plasma source |
US6770565B2 (en) | 2002-01-08 | 2004-08-03 | Applied Materials Inc. | System for planarizing metal conductive layers |
US6942929B2 (en) | 2002-01-08 | 2005-09-13 | Nianci Han | Process chamber having component with yttrium-aluminum coating |
US6827815B2 (en) | 2002-01-15 | 2004-12-07 | Applied Materials, Inc. | Showerhead assembly for a processing chamber |
US6869880B2 (en) | 2002-01-24 | 2005-03-22 | Applied Materials, Inc. | In situ application of etch back for improved deposition into high-aspect-ratio features |
US20040060514A1 (en) | 2002-01-25 | 2004-04-01 | Applied Materials, Inc. A Delaware Corporation | Gas distribution showerhead |
US6866746B2 (en) | 2002-01-26 | 2005-03-15 | Applied Materials, Inc. | Clamshell and small volume chamber with fixed substrate support |
US6998014B2 (en) | 2002-01-26 | 2006-02-14 | Applied Materials, Inc. | Apparatus and method for plasma assisted deposition |
US7138014B2 (en) | 2002-01-28 | 2006-11-21 | Applied Materials, Inc. | Electroless deposition apparatus |
TWI239794B (en) | 2002-01-30 | 2005-09-11 | Alps Electric Co Ltd | Plasma processing apparatus and method |
US7226504B2 (en) | 2002-01-31 | 2007-06-05 | Sharp Laboratories Of America, Inc. | Method to form thick relaxed SiGe layer with trench structure |
US6632325B2 (en) | 2002-02-07 | 2003-10-14 | Applied Materials, Inc. | Article for use in a semiconductor processing chamber and method of fabricating same |
US7033447B2 (en) | 2002-02-08 | 2006-04-25 | Applied Materials, Inc. | Halogen-resistant, anodized aluminum for use in semiconductor processing apparatus |
US7048814B2 (en) | 2002-02-08 | 2006-05-23 | Applied Materials, Inc. | Halogen-resistant, anodized aluminum for use in semiconductor processing apparatus |
US6821348B2 (en) | 2002-02-14 | 2004-11-23 | 3M Innovative Properties Company | In-line deposition processes for circuit fabrication |
US7479304B2 (en) | 2002-02-14 | 2009-01-20 | Applied Materials, Inc. | Gas distribution plate fabricated from a solid yttrium oxide-comprising substrate |
US6656848B1 (en) | 2002-02-22 | 2003-12-02 | Scientific Systems Research Limited | Plasma chamber conditioning |
JP3921234B2 (ja) | 2002-02-28 | 2007-05-30 | キヤノンアネルバ株式会社 | 表面処理装置及びその製造方法 |
US6677167B2 (en) | 2002-03-04 | 2004-01-13 | Hitachi High-Technologies Corporation | Wafer processing apparatus and a wafer stage and a wafer processing method |
US6646233B2 (en) | 2002-03-05 | 2003-11-11 | Hitachi High-Technologies Corporation | Wafer stage for wafer processing apparatus and wafer processing method |
US20060252265A1 (en) | 2002-03-06 | 2006-11-09 | Guangxiang Jin | Etching high-kappa dielectric materials with good high-kappa foot control and silicon recess control |
US20030168174A1 (en) | 2002-03-08 | 2003-09-11 | Foree Michael Todd | Gas cushion susceptor system |
US7252011B2 (en) | 2002-03-11 | 2007-08-07 | Mks Instruments, Inc. | Surface area deposition trap |
JP3813562B2 (ja) | 2002-03-15 | 2006-08-23 | 富士通株式会社 | 半導体装置及びその製造方法 |
US7256370B2 (en) | 2002-03-15 | 2007-08-14 | Steed Technology, Inc. | Vacuum thermal annealer |
US20040003828A1 (en) | 2002-03-21 | 2004-01-08 | Jackson David P. | Precision surface treatments using dense fluids and a plasma |
US6913651B2 (en) | 2002-03-22 | 2005-07-05 | Blue29, Llc | Apparatus and method for electroless deposition of materials on semiconductor substrates |
JP4053326B2 (ja) | 2002-03-27 | 2008-02-27 | 東芝松下ディスプレイテクノロジー株式会社 | 薄膜トランジスタの製造方法 |
US6541397B1 (en) | 2002-03-29 | 2003-04-01 | Applied Materials, Inc. | Removable amorphous carbon CMP stop |
US6843858B2 (en) | 2002-04-02 | 2005-01-18 | Applied Materials, Inc. | Method of cleaning a semiconductor processing chamber |
US20030190426A1 (en) | 2002-04-03 | 2003-10-09 | Deenesh Padhi | Electroless deposition method |
US6921556B2 (en) | 2002-04-12 | 2005-07-26 | Asm Japan K.K. | Method of film deposition using single-wafer-processing type CVD |
US6616967B1 (en) | 2002-04-15 | 2003-09-09 | Texas Instruments Incorporated | Method to achieve continuous hydrogen saturation in sparingly used electroless nickel plating process |
US6897532B1 (en) | 2002-04-15 | 2005-05-24 | Cypress Semiconductor Corp. | Magnetic tunneling junction configuration and a method for making the same |
US7013834B2 (en) | 2002-04-19 | 2006-03-21 | Nordson Corporation | Plasma treatment system |
JP3773189B2 (ja) | 2002-04-24 | 2006-05-10 | 独立行政法人科学技術振興機構 | 窓型プローブ、プラズマ監視装置、及び、プラズマ処理装置 |
KR100448714B1 (ko) | 2002-04-24 | 2004-09-13 | 삼성전자주식회사 | 다층 나노라미네이트 구조를 갖는 반도체 장치의 절연막및 그의 형성방법 |
US6528409B1 (en) | 2002-04-29 | 2003-03-04 | Advanced Micro Devices, Inc. | Interconnect structure formed in porous dielectric material with minimized degradation and electromigration |
US6908862B2 (en) | 2002-05-03 | 2005-06-21 | Applied Materials, Inc. | HDP-CVD dep/etch/dep process for improved deposition into high aspect ratio features |
JP2003324072A (ja) | 2002-05-07 | 2003-11-14 | Nec Electronics Corp | 半導体製造装置 |
TW538497B (en) | 2002-05-16 | 2003-06-21 | Nanya Technology Corp | Method to form a bottle-shaped trench |
US20030215570A1 (en) | 2002-05-16 | 2003-11-20 | Applied Materials, Inc. | Deposition of silicon nitride |
US6825051B2 (en) | 2002-05-17 | 2004-11-30 | Asm America, Inc. | Plasma etch resistant coating and process |
US6500728B1 (en) | 2002-05-24 | 2002-12-31 | Taiwan Semiconductor Manufacturing Company | Shallow trench isolation (STI) module to improve contact etch process window |
US20030224217A1 (en) | 2002-05-31 | 2003-12-04 | Applied Materials, Inc. | Metal nitride formation |
KR100434110B1 (ko) | 2002-06-04 | 2004-06-04 | 삼성전자주식회사 | 반도체 장치의 제조방법 |
US20030230385A1 (en) | 2002-06-13 | 2003-12-18 | Applied Materials, Inc. | Electro-magnetic configuration for uniformity enhancement in a dual chamber plasma processing system |
KR101019190B1 (ko) | 2002-06-14 | 2011-03-04 | 세키스이가가쿠 고교가부시키가이샤 | 산화막 형성 방법 및 산화막 형성 장치 |
US6924191B2 (en) | 2002-06-20 | 2005-08-02 | Applied Materials, Inc. | Method for fabricating a gate structure of a field effect transistor |
DE10229037A1 (de) | 2002-06-28 | 2004-01-29 | Robert Bosch Gmbh | Vorrichtung und Verfahren zur Erzeugung von Chlortrifluorid und Anlage zur Ätzung von Halbleitersubstraten mit dieser Vorrichtung |
US20040072446A1 (en) | 2002-07-02 | 2004-04-15 | Applied Materials, Inc. | Method for fabricating an ultra shallow junction of a field effect transistor |
US6767844B2 (en) | 2002-07-03 | 2004-07-27 | Taiwan Semiconductor Manufacturing Co., Ltd | Plasma chamber equipped with temperature-controlled focus ring and method of operating |
US6838125B2 (en) | 2002-07-10 | 2005-01-04 | Applied Materials, Inc. | Method of film deposition using activated precursor gases |
US7357138B2 (en) | 2002-07-18 | 2008-04-15 | Air Products And Chemicals, Inc. | Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials |
US7988398B2 (en) | 2002-07-22 | 2011-08-02 | Brooks Automation, Inc. | Linear substrate transport apparatus |
AU2003261342A1 (en) | 2002-08-02 | 2004-02-23 | E.A. Fischione Instruments, Inc. | Methods and apparatus for preparing specimens for microscopy |
US6921555B2 (en) | 2002-08-06 | 2005-07-26 | Tegal Corporation | Method and system for sequential processing in a two-compartment chamber |
US20040058293A1 (en) | 2002-08-06 | 2004-03-25 | Tue Nguyen | Assembly line processing system |
US20060040055A1 (en) | 2002-08-06 | 2006-02-23 | Tegal Corporation | Method and system for sequential processing in a two-compartment chamber |
US20060046412A1 (en) | 2002-08-06 | 2006-03-02 | Tegal Corporation | Method and system for sequential processing in a two-compartment chamber |
JP3861036B2 (ja) | 2002-08-09 | 2006-12-20 | 三菱重工業株式会社 | プラズマcvd装置 |
US7541270B2 (en) | 2002-08-13 | 2009-06-02 | Micron Technology, Inc. | Methods for forming openings in doped silicon dioxide |
US20040033677A1 (en) | 2002-08-14 | 2004-02-19 | Reza Arghavani | Method and apparatus to prevent lateral oxidation in a transistor utilizing an ultra thin oxygen-diffusion barrier |
US6781173B2 (en) | 2002-08-29 | 2004-08-24 | Micron Technology, Inc. | MRAM sense layer area control |
US6946033B2 (en) | 2002-09-16 | 2005-09-20 | Applied Materials Inc. | Heated gas distribution plate for a processing chamber |
JP3991315B2 (ja) | 2002-09-17 | 2007-10-17 | キヤノンアネルバ株式会社 | 薄膜形成装置及び方法 |
US7335609B2 (en) | 2004-08-27 | 2008-02-26 | Applied Materials, Inc. | Gap-fill depositions introducing hydroxyl-containing precursors in the formation of silicon containing dielectric materials |
JP4260450B2 (ja) | 2002-09-20 | 2009-04-30 | 東京エレクトロン株式会社 | 真空処理装置における静電チャックの製造方法 |
US7166200B2 (en) | 2002-09-30 | 2007-01-23 | Tokyo Electron Limited | Method and apparatus for an improved upper electrode plate in a plasma processing system |
US20070051471A1 (en) | 2002-10-04 | 2007-03-08 | Applied Materials, Inc. | Methods and apparatus for stripping |
KR100500852B1 (ko) | 2002-10-10 | 2005-07-12 | 최대규 | 원격 플라즈마 발생기 |
US6991959B2 (en) | 2002-10-10 | 2006-01-31 | Asm Japan K.K. | Method of manufacturing silicon carbide film |
JP4606713B2 (ja) | 2002-10-17 | 2011-01-05 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US6699380B1 (en) | 2002-10-18 | 2004-03-02 | Applied Materials Inc. | Modular electrochemical processing system |
US6802944B2 (en) | 2002-10-23 | 2004-10-12 | Applied Materials, Inc. | High density plasma CVD process for gapfill into high aspect ratio features |
US7628897B2 (en) | 2002-10-23 | 2009-12-08 | Applied Materials, Inc. | Reactive ion etching for semiconductor device feature topography modification |
US6853043B2 (en) | 2002-11-04 | 2005-02-08 | Applied Materials, Inc. | Nitrogen-free antireflective coating for use with photolithographic patterning |
JP2004165317A (ja) | 2002-11-12 | 2004-06-10 | Renesas Technology Corp | 半導体装置およびその製造方法 |
EP1420080A3 (en) | 2002-11-14 | 2005-11-09 | Applied Materials, Inc. | Apparatus and method for hybrid chemical deposition processes |
KR100862658B1 (ko) | 2002-11-15 | 2008-10-10 | 삼성전자주식회사 | 반도체 처리 시스템의 가스 주입 장치 |
US6861332B2 (en) | 2002-11-21 | 2005-03-01 | Intel Corporation | Air gap interconnect method |
US6902628B2 (en) | 2002-11-25 | 2005-06-07 | Applied Materials, Inc. | Method of cleaning a coated process chamber component |
JP2004179426A (ja) | 2002-11-27 | 2004-06-24 | Tokyo Electron Ltd | 基板処理装置のクリーニング方法 |
US6713873B1 (en) | 2002-11-27 | 2004-03-30 | Intel Corporation | Adhesion between dielectric materials |
TW561068B (en) | 2002-11-29 | 2003-11-11 | Au Optronics Corp | Nozzle head with excellent corrosion resistance for dry etching process and anti-corrosion method thereof |
US7396773B1 (en) | 2002-12-06 | 2008-07-08 | Cypress Semiconductor Company | Method for cleaning a gate stack |
US20040118344A1 (en) | 2002-12-20 | 2004-06-24 | Lam Research Corporation | System and method for controlling plasma with an adjustable coupling to ground circuit |
US6806949B2 (en) | 2002-12-31 | 2004-10-19 | Tokyo Electron Limited | Monitoring material buildup on system components by optical emission |
US6720213B1 (en) | 2003-01-15 | 2004-04-13 | International Business Machines Corporation | Low-K gate spacers by fluorine implantation |
US6808748B2 (en) | 2003-01-23 | 2004-10-26 | Applied Materials, Inc. | Hydrogen assisted HDP-CVD deposition process for aggressive gap-fill technology |
US7500445B2 (en) | 2003-01-27 | 2009-03-10 | Applied Materials, Inc. | Method and apparatus for cleaning a CVD chamber |
US7316761B2 (en) | 2003-02-03 | 2008-01-08 | Applied Materials, Inc. | Apparatus for uniformly etching a dielectric layer |
US7205248B2 (en) | 2003-02-04 | 2007-04-17 | Micron Technology, Inc. | Method of eliminating residual carbon from flowable oxide fill |
US7078351B2 (en) | 2003-02-10 | 2006-07-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist intensive patterning and processing |
CN100468611C (zh) | 2003-02-14 | 2009-03-11 | 应用材料股份有限公司 | 利用含氢自由基清洁自生氧化物的方法和设备 |
US6982175B2 (en) | 2003-02-14 | 2006-01-03 | Unaxis Usa Inc. | End point detection in time division multiplexed etch processes |
US20040195208A1 (en) | 2003-02-15 | 2004-10-07 | Pavel Elizabeth G. | Method and apparatus for performing hydrogen optical emission endpoint detection for photoresist strip and residue removal |
US6969619B1 (en) | 2003-02-18 | 2005-11-29 | Novellus Systems, Inc. | Full spectrum endpoint detection |
KR100739837B1 (ko) | 2003-02-19 | 2007-07-13 | 마쯔시다덴기산교 가부시키가이샤 | 불순물 도입 방법 및 불순물 도입 장치 |
DE10308870B4 (de) | 2003-02-28 | 2006-07-27 | Austriamicrosystems Ag | Bipolartransistor mit verbessertem Basis-Emitter-Übergang und Verfahren zur Herstellung |
US6913992B2 (en) | 2003-03-07 | 2005-07-05 | Applied Materials, Inc. | Method of modifying interlayer adhesion |
WO2004082007A1 (ja) | 2003-03-12 | 2004-09-23 | Tokyo Electron Limited | 半導体処理用の基板保持構造及びプラズマ処理装置 |
US6951821B2 (en) | 2003-03-17 | 2005-10-04 | Tokyo Electron Limited | Processing system and method for chemically treating a substrate |
US20040182315A1 (en) | 2003-03-17 | 2004-09-23 | Tokyo Electron Limited | Reduced maintenance chemical oxide removal (COR) processing system |
JP2004296467A (ja) | 2003-03-25 | 2004-10-21 | Hitachi Kokusai Electric Inc | 基板処理装置 |
US20040187787A1 (en) | 2003-03-31 | 2004-09-30 | Dawson Keith E. | Substrate support having temperature controlled substrate support surface |
WO2004093178A1 (ja) | 2003-04-11 | 2004-10-28 | Hoya Corporation | クロム系薄膜のエッチング方法及びフォトマスクの製造方法 |
US7037376B2 (en) | 2003-04-11 | 2006-05-02 | Applied Materials Inc. | Backflush chamber clean |
US7126225B2 (en) | 2003-04-15 | 2006-10-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for manufacturing a semiconductor wafer with reduced delamination and peeling |
US6942753B2 (en) | 2003-04-16 | 2005-09-13 | Applied Materials, Inc. | Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition |
US6872909B2 (en) | 2003-04-16 | 2005-03-29 | Applied Science And Technology, Inc. | Toroidal low-field reactive gas and plasma source having a dielectric vacuum vessel |
TWI227565B (en) | 2003-04-16 | 2005-02-01 | Au Optronics Corp | Low temperature poly-Si thin film transistor and method of manufacturing the same |
US20040211357A1 (en) | 2003-04-24 | 2004-10-28 | Gadgil Pradad N. | Method of manufacturing a gap-filled structure of a semiconductor device |
US6830624B2 (en) | 2003-05-02 | 2004-12-14 | Applied Materials, Inc. | Blocker plate by-pass for remote plasma clean |
US6903511B2 (en) | 2003-05-06 | 2005-06-07 | Zond, Inc. | Generation of uniformly-distributed plasma |
DE10320472A1 (de) | 2003-05-08 | 2004-12-02 | Kolektor D.O.O. | Plasmabehandlung zur Reinigung von Kupfer oder Nickel |
US6713835B1 (en) | 2003-05-22 | 2004-03-30 | International Business Machines Corporation | Method for manufacturing a multi-level interconnect structure |
US7045020B2 (en) | 2003-05-22 | 2006-05-16 | Applied Materials, Inc. | Cleaning a component of a process chamber |
US20040237897A1 (en) | 2003-05-27 | 2004-12-02 | Hiroji Hanawa | High-Frequency electrostatically shielded toroidal plasma and radical source |
JP4108633B2 (ja) | 2003-06-20 | 2008-06-25 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに電子デバイス |
US7067432B2 (en) | 2003-06-26 | 2006-06-27 | Applied Materials, Inc. | Methodology for in-situ and real-time chamber condition monitoring and process recovery during plasma processing |
WO2005001920A1 (ja) | 2003-06-27 | 2005-01-06 | Tokyo Electron Limited | プラズマ発生方法、クリーニング方法および基板処理方法 |
US7151277B2 (en) | 2003-07-03 | 2006-12-19 | The Regents Of The University Of California | Selective etching of silicon carbide films |
JP4245996B2 (ja) | 2003-07-07 | 2009-04-02 | 株式会社荏原製作所 | 無電解めっきによるキャップ膜の形成方法およびこれに用いる装置 |
US7368392B2 (en) | 2003-07-10 | 2008-05-06 | Applied Materials, Inc. | Method of fabricating a gate structure of a field effect transistor having a metal-containing gate electrode |
US6995073B2 (en) | 2003-07-16 | 2006-02-07 | Intel Corporation | Air gap integration |
JP3866694B2 (ja) | 2003-07-30 | 2007-01-10 | 株式会社日立ハイテクノロジーズ | Lsiデバイスのエッチング方法および装置 |
US7256134B2 (en) | 2003-08-01 | 2007-08-14 | Applied Materials, Inc. | Selective etching of carbon-doped low-k dielectrics |
JP4239750B2 (ja) | 2003-08-13 | 2009-03-18 | セイコーエプソン株式会社 | マイクロレンズ及びマイクロレンズの製造方法、光学装置、光伝送装置、レーザプリンタ用ヘッド、並びにレーザプリンタ |
US20050035455A1 (en) | 2003-08-14 | 2005-02-17 | Chenming Hu | Device with low-k dielectric in close proximity thereto and its method of fabrication |
US7182816B2 (en) | 2003-08-18 | 2007-02-27 | Tokyo Electron Limited | Particulate reduction using temperature-controlled chamber shield |
US7361865B2 (en) | 2003-08-27 | 2008-04-22 | Kyocera Corporation | Heater for heating a wafer and method for fabricating the same |
US7521000B2 (en) | 2003-08-28 | 2009-04-21 | Applied Materials, Inc. | Process for etching photomasks |
US6903031B2 (en) | 2003-09-03 | 2005-06-07 | Applied Materials, Inc. | In-situ-etch-assisted HDP deposition using SiF4 and hydrogen |
US7282244B2 (en) | 2003-09-05 | 2007-10-16 | General Electric Company | Replaceable plate expanded thermal plasma apparatus and method |
US7030034B2 (en) | 2003-09-18 | 2006-04-18 | Micron Technology, Inc. | Methods of etching silicon nitride substantially selectively relative to an oxide of aluminum |
US6967405B1 (en) | 2003-09-24 | 2005-11-22 | Yongsik Yu | Film for copper diffusion barrier |
JP2005101141A (ja) | 2003-09-24 | 2005-04-14 | Renesas Technology Corp | 半導体集積回路装置およびその製造方法 |
US7371688B2 (en) | 2003-09-30 | 2008-05-13 | Air Products And Chemicals, Inc. | Removal of transition metal ternary and/or quaternary barrier materials from a substrate |
US7071532B2 (en) | 2003-09-30 | 2006-07-04 | International Business Machines Corporation | Adjustable self-aligned air gap dielectric for low capacitance wiring |
KR20030083663A (ko) | 2003-10-04 | 2003-10-30 | 삼영플랜트주식회사 | 건설폐기물로부터 시멘트 페이스트 및 모르타르가 제거된재생골재 및 모래를 생산하는 방법 및 장치 |
JP4399227B2 (ja) | 2003-10-06 | 2010-01-13 | 株式会社フジキン | チャンバの内圧制御装置及び内圧被制御式チャンバ |
US20050087517A1 (en) | 2003-10-09 | 2005-04-28 | Andrew Ott | Adhesion between carbon doped oxide and etch stop layers |
US7408225B2 (en) | 2003-10-09 | 2008-08-05 | Asm Japan K.K. | Apparatus and method for forming thin film using upstream and downstream exhaust mechanisms |
US7581511B2 (en) | 2003-10-10 | 2009-09-01 | Micron Technology, Inc. | Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes |
US7125792B2 (en) | 2003-10-14 | 2006-10-24 | Infineon Technologies Ag | Dual damascene structure and method |
US20050085031A1 (en) | 2003-10-15 | 2005-04-21 | Applied Materials, Inc. | Heterogeneous activation layers formed by ionic and electroless reactions used for IC interconnect capping layers |
US20070111519A1 (en) | 2003-10-15 | 2007-05-17 | Applied Materials, Inc. | Integrated electroless deposition system |
US7465358B2 (en) | 2003-10-15 | 2008-12-16 | Applied Materials, Inc. | Measurement techniques for controlling aspects of a electroless deposition process |
JP2005129666A (ja) | 2003-10-22 | 2005-05-19 | Canon Inc | 処理方法及び装置 |
JP2005129688A (ja) | 2003-10-23 | 2005-05-19 | Hitachi Ltd | 半導体装置の製造方法 |
US7053994B2 (en) | 2003-10-28 | 2006-05-30 | Lam Research Corporation | Method and apparatus for etch endpoint detection |
KR100561848B1 (ko) | 2003-11-04 | 2006-03-16 | 삼성전자주식회사 | 헬리컬 공진기형 플라즈마 처리 장치 |
US7709392B2 (en) | 2003-11-05 | 2010-05-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Low K dielectric surface damage control |
US7205233B2 (en) | 2003-11-07 | 2007-04-17 | Applied Materials, Inc. | Method for forming CoWRe alloys by electroless deposition |
JP4273932B2 (ja) | 2003-11-07 | 2009-06-03 | 株式会社島津製作所 | 表面波励起プラズマcvd装置 |
US20050103267A1 (en) | 2003-11-14 | 2005-05-19 | Hur Gwang H. | Flat panel display manufacturing apparatus |
JP4256763B2 (ja) | 2003-11-19 | 2009-04-22 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
JP4393844B2 (ja) | 2003-11-19 | 2010-01-06 | 東京エレクトロン株式会社 | プラズマ成膜装置及びプラズマ成膜方法 |
US20050145341A1 (en) | 2003-11-19 | 2005-07-07 | Masaki Suzuki | Plasma processing apparatus |
KR100558925B1 (ko) | 2003-11-24 | 2006-03-10 | 세메스 주식회사 | 웨이퍼 에지 식각 장치 |
US20050109276A1 (en) | 2003-11-25 | 2005-05-26 | Applied Materials, Inc. | Thermal chemical vapor deposition of silicon nitride using BTBAS bis(tertiary-butylamino silane) in a single wafer chamber |
US20050112876A1 (en) | 2003-11-26 | 2005-05-26 | Chih-Ta Wu | Method to form a robust TiCI4 based CVD TiN film |
US7431966B2 (en) | 2003-12-09 | 2008-10-07 | Micron Technology, Inc. | Atomic layer deposition method of depositing an oxide on a substrate |
US7081407B2 (en) | 2003-12-16 | 2006-07-25 | Lam Research Corporation | Method of preventing damage to porous low-k materials during resist stripping |
US7220497B2 (en) | 2003-12-18 | 2007-05-22 | Lam Research Corporation | Yttria-coated ceramic components of semiconductor material processing apparatuses and methods of manufacturing the components |
US6958286B2 (en) | 2004-01-02 | 2005-10-25 | International Business Machines Corporation | Method of preventing surface roughening during hydrogen prebake of SiGe substrates |
US6893967B1 (en) | 2004-01-13 | 2005-05-17 | Advanced Micro Devices, Inc. | L-shaped spacer incorporating or patterned using amorphous carbon or CVD organic materials |
US6852584B1 (en) | 2004-01-14 | 2005-02-08 | Tokyo Electron Limited | Method of trimming a gate electrode structure |
US7361605B2 (en) | 2004-01-20 | 2008-04-22 | Mattson Technology, Inc. | System and method for removal of photoresist and residues following contact etch with a stop layer present |
US20060033678A1 (en) | 2004-01-26 | 2006-02-16 | Applied Materials, Inc. | Integrated electroless deposition system |
US7012027B2 (en) | 2004-01-27 | 2006-03-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Zirconium oxide and hafnium oxide etching using halogen containing chemicals |
US7064078B2 (en) | 2004-01-30 | 2006-06-20 | Applied Materials | Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme |
WO2005076336A1 (ja) | 2004-02-09 | 2005-08-18 | Tadahiro Ohmi | 半導体装置の製造方法および絶縁膜のエッチング方法 |
US7291550B2 (en) | 2004-02-13 | 2007-11-06 | Chartered Semiconductor Manufacturing Ltd. | Method to form a contact hole |
US7015415B2 (en) | 2004-02-18 | 2006-03-21 | Dry Plasma Systems, Inc. | Higher power density downstream plasma |
JP4707959B2 (ja) | 2004-02-20 | 2011-06-22 | 日本エー・エス・エム株式会社 | シャワープレート、プラズマ処理装置及びプラズマ処理方法 |
JP4698251B2 (ja) | 2004-02-24 | 2011-06-08 | アプライド マテリアルズ インコーポレイテッド | 可動又は柔軟なシャワーヘッド取り付け |
US20070123051A1 (en) | 2004-02-26 | 2007-05-31 | Reza Arghavani | Oxide etch with nh4-nf3 chemistry |
US20060051966A1 (en) | 2004-02-26 | 2006-03-09 | Applied Materials, Inc. | In-situ chamber clean process to remove by-product deposits from chemical vapor etch chamber |
US7780793B2 (en) | 2004-02-26 | 2010-08-24 | Applied Materials, Inc. | Passivation layer formation by plasma clean process to reduce native oxide growth |
US20050230350A1 (en) | 2004-02-26 | 2005-10-20 | Applied Materials, Inc. | In-situ dry clean chamber for front end of line fabrication |
JP4879159B2 (ja) | 2004-03-05 | 2012-02-22 | アプライド マテリアルズ インコーポレイテッド | アモルファス炭素膜堆積のためのcvdプロセス |
US8037896B2 (en) | 2004-03-09 | 2011-10-18 | Mks Instruments, Inc. | Pressure regulation in remote zones |
US7196342B2 (en) | 2004-03-10 | 2007-03-27 | Cymer, Inc. | Systems and methods for reducing the influence of plasma-generated debris on the internal components of an EUV light source |
US7682985B2 (en) | 2004-03-17 | 2010-03-23 | Lam Research Corporation | Dual doped polysilicon and silicon germanium etch |
US7109521B2 (en) | 2004-03-18 | 2006-09-19 | Cree, Inc. | Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls |
US7582555B1 (en) | 2005-12-29 | 2009-09-01 | Novellus Systems, Inc. | CVD flowable gap fill |
US7291360B2 (en) | 2004-03-26 | 2007-11-06 | Applied Materials, Inc. | Chemical vapor deposition plasma process using plural ion shower grids |
US7695590B2 (en) | 2004-03-26 | 2010-04-13 | Applied Materials, Inc. | Chemical vapor deposition plasma reactor having plural ion shower grids |
US7244474B2 (en) | 2004-03-26 | 2007-07-17 | Applied Materials, Inc. | Chemical vapor deposition plasma process using an ion shower grid |
US7697260B2 (en) | 2004-03-31 | 2010-04-13 | Applied Materials, Inc. | Detachable electrostatic chuck |
US7358192B2 (en) | 2004-04-08 | 2008-04-15 | Applied Materials, Inc. | Method and apparatus for in-situ film stack processing |
US7273526B2 (en) | 2004-04-15 | 2007-09-25 | Asm Japan K.K. | Thin-film deposition apparatus |
US8083853B2 (en) | 2004-05-12 | 2011-12-27 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser hole design |
US7785672B2 (en) | 2004-04-20 | 2010-08-31 | Applied Materials, Inc. | Method of controlling the film properties of PECVD-deposited thin films |
US7018941B2 (en) | 2004-04-21 | 2006-03-28 | Applied Materials, Inc. | Post treatment of low k dielectric films |
TWI249774B (en) | 2004-04-23 | 2006-02-21 | Nanya Technology Corp | Forming method of self-aligned contact for semiconductor device |
US7115974B2 (en) | 2004-04-27 | 2006-10-03 | Taiwan Semiconductor Manfacturing Company, Ltd. | Silicon oxycarbide and silicon carbonitride based materials for MOS devices |
US20050238807A1 (en) | 2004-04-27 | 2005-10-27 | Applied Materials, Inc. | Refurbishment of a coated chamber component |
US7708859B2 (en) | 2004-04-30 | 2010-05-04 | Lam Research Corporation | Gas distribution system having fast gas switching capabilities |
JP2007537602A (ja) | 2004-05-11 | 2007-12-20 | アプライド マテリアルズ インコーポレイテッド | フルオロカーボン化学エッチングにおけるh2添加物を使用しての炭素ドープ酸化ケイ素エッチング |
US8328939B2 (en) | 2004-05-12 | 2012-12-11 | Applied Materials, Inc. | Diffuser plate with slit valve compensation |
US8074599B2 (en) | 2004-05-12 | 2011-12-13 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser curvature |
US7691686B2 (en) | 2004-05-21 | 2010-04-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US7049200B2 (en) | 2004-05-25 | 2006-05-23 | Applied Materials Inc. | Method for forming a low thermal budget spacer |
KR100624566B1 (ko) | 2004-05-31 | 2006-09-19 | 주식회사 하이닉스반도체 | 커패시터 상부에 유동성 절연막을 갖는 반도체소자 및 그제조 방법 |
US20050274324A1 (en) | 2004-06-04 | 2005-12-15 | Tokyo Electron Limited | Plasma processing apparatus and mounting unit thereof |
US7651583B2 (en) | 2004-06-04 | 2010-01-26 | Tokyo Electron Limited | Processing system and method for treating a substrate |
US7226852B1 (en) | 2004-06-10 | 2007-06-05 | Lam Research Corporation | Preventing damage to low-k materials during resist stripping |
US7430496B2 (en) | 2004-06-16 | 2008-09-30 | Tokyo Electron Limited | Method and apparatus for using a pressure control system to monitor a plasma processing system |
US7253107B2 (en) | 2004-06-17 | 2007-08-07 | Asm International N.V. | Pressure control system |
US7122949B2 (en) | 2004-06-21 | 2006-10-17 | Neocera, Inc. | Cylindrical electron beam generating/triggering device and method for generation of electrons |
US20050284573A1 (en) | 2004-06-24 | 2005-12-29 | Egley Fred D | Bare aluminum baffles for resist stripping chambers |
US7220687B2 (en) | 2004-06-25 | 2007-05-22 | Applied Materials, Inc. | Method to improve water-barrier performance by changing film surface morphology |
US20060005856A1 (en) | 2004-06-29 | 2006-01-12 | Applied Materials, Inc. | Reduction of reactive gas attack on substrate heater |
US8349128B2 (en) | 2004-06-30 | 2013-01-08 | Applied Materials, Inc. | Method and apparatus for stable plasma processing |
US20060000802A1 (en) | 2004-06-30 | 2006-01-05 | Ajay Kumar | Method and apparatus for photomask plasma etching |
US7097779B2 (en) | 2004-07-06 | 2006-08-29 | Tokyo Electron Limited | Processing system and method for chemically treating a TERA layer |
JP2006049817A (ja) | 2004-07-07 | 2006-02-16 | Showa Denko Kk | プラズマ処理方法およびプラズマエッチング方法 |
WO2006005067A2 (en) | 2004-07-07 | 2006-01-12 | General Electric Company | Protective coating on a substrate and method of making thereof |
US7845309B2 (en) | 2004-07-13 | 2010-12-07 | Nordson Corporation | Ultra high speed uniform plasma processing system |
KR100614648B1 (ko) | 2004-07-15 | 2006-08-23 | 삼성전자주식회사 | 반도체 소자 제조에 사용되는 기판 처리 장치 |
US7767561B2 (en) | 2004-07-20 | 2010-08-03 | Applied Materials, Inc. | Plasma immersion ion implantation reactor having an ion shower grid |
KR100584485B1 (ko) | 2004-07-20 | 2006-05-29 | 동부일렉트로닉스 주식회사 | 반도체 소자의 금속 부식 방지 방법 |
US20060016783A1 (en) | 2004-07-22 | 2006-01-26 | Dingjun Wu | Process for titanium nitride removal |
JP4492947B2 (ja) | 2004-07-23 | 2010-06-30 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP4579611B2 (ja) | 2004-07-26 | 2010-11-10 | 株式会社日立ハイテクノロジーズ | ドライエッチング方法 |
US7217626B2 (en) | 2004-07-26 | 2007-05-15 | Texas Instruments Incorporated | Transistor fabrication methods using dual sidewall spacers |
US7381291B2 (en) | 2004-07-29 | 2008-06-03 | Asm Japan K.K. | Dual-chamber plasma processing apparatus |
US20060021703A1 (en) | 2004-07-29 | 2006-02-02 | Applied Materials, Inc. | Dual gas faceplate for a showerhead in a semiconductor wafer processing system |
US7806077B2 (en) | 2004-07-30 | 2010-10-05 | Amarante Technologies, Inc. | Plasma nozzle array for providing uniform scalable microwave plasma generation |
US7192863B2 (en) | 2004-07-30 | 2007-03-20 | Texas Instruments Incorporated | Method of eliminating etch ridges in a dual damascene process |
JP5519105B2 (ja) | 2004-08-02 | 2014-06-11 | ビーコ・インストゥルメンツ・インコーポレイテッド | 化学気相成長の方法及び化学気相成長リアクタ用のガス供給システム |
US20060024954A1 (en) | 2004-08-02 | 2006-02-02 | Zhen-Cheng Wu | Copper damascene barrier and capping layer |
JP4718141B2 (ja) | 2004-08-06 | 2011-07-06 | 東京エレクトロン株式会社 | 薄膜形成方法及び薄膜形成装置 |
US7247570B2 (en) | 2004-08-19 | 2007-07-24 | Micron Technology, Inc. | Silicon pillars for vertical transistors |
US20060043066A1 (en) | 2004-08-26 | 2006-03-02 | Kamp Thomas A | Processes for pre-tapering silicon or silicon-germanium prior to etching shallow trenches |
US20060042752A1 (en) | 2004-08-30 | 2006-03-02 | Rueger Neal R | Plasma processing apparatuses and methods |
CN102610481B (zh) | 2004-09-01 | 2016-04-13 | 朗姆研究公司 | 用于增加光阻移除率之装置及等离子体灰化方法 |
US7115525B2 (en) | 2004-09-02 | 2006-10-03 | Micron Technology, Inc. | Method for integrated circuit fabrication using pitch multiplication |
US7329576B2 (en) | 2004-09-02 | 2008-02-12 | Micron Technology, Inc. | Double-sided container capacitors using a sacrificial layer |
JP2006108629A (ja) | 2004-09-10 | 2006-04-20 | Toshiba Corp | 半導体装置の製造方法 |
US20060292846A1 (en) | 2004-09-17 | 2006-12-28 | Pinto Gustavo A | Material management in substrate processing |
JP4467453B2 (ja) | 2004-09-30 | 2010-05-26 | 日本碍子株式会社 | セラミックス部材及びその製造方法 |
US7138767B2 (en) | 2004-09-30 | 2006-11-21 | Tokyo Electron Limited | Surface wave plasma processing system and method of using |
US7268084B2 (en) | 2004-09-30 | 2007-09-11 | Tokyo Electron Limited | Method for treating a substrate |
US7544251B2 (en) | 2004-10-07 | 2009-06-09 | Applied Materials, Inc. | Method and apparatus for controlling temperature of a substrate |
US7148155B1 (en) | 2004-10-26 | 2006-12-12 | Novellus Systems, Inc. | Sequential deposition/anneal film densification method |
US7053003B2 (en) | 2004-10-27 | 2006-05-30 | Lam Research Corporation | Photoresist conditioning with hydrogen ramping |
JP2006128485A (ja) | 2004-10-29 | 2006-05-18 | Asm Japan Kk | 半導体処理装置 |
US20060093756A1 (en) | 2004-11-03 | 2006-05-04 | Nagarajan Rajagopalan | High-power dielectric seasoning for stable wafer-to-wafer thickness uniformity of dielectric CVD films |
US20060097397A1 (en) | 2004-11-10 | 2006-05-11 | Russell Stephen W | Method for forming a dual layer, low resistance metallization during the formation of a semiconductor device |
US7618515B2 (en) | 2004-11-15 | 2009-11-17 | Tokyo Electron Limited | Focus ring, plasma etching apparatus and plasma etching method |
EP1662546A1 (en) | 2004-11-25 | 2006-05-31 | The European Community, represented by the European Commission | Inductively coupled plasma processing apparatus |
US7052553B1 (en) | 2004-12-01 | 2006-05-30 | Lam Research Corporation | Wet cleaning of electrostatic chucks |
US7256121B2 (en) | 2004-12-02 | 2007-08-14 | Texas Instruments Incorporated | Contact resistance reduction by new barrier stack process |
FR2878913B1 (fr) | 2004-12-03 | 2007-01-19 | Cit Alcatel | Controle des pressions partielles de gaz pour optimisation de procede |
US20060118240A1 (en) | 2004-12-03 | 2006-06-08 | Applied Science And Technology, Inc. | Methods and apparatus for downstream dissociation of gases |
JP2006193822A (ja) | 2004-12-16 | 2006-07-27 | Sharp Corp | めっき装置、めっき方法、半導体装置、及び半導体装置の製造方法 |
US20060130971A1 (en) | 2004-12-21 | 2006-06-22 | Applied Materials, Inc. | Apparatus for generating plasma by RF power |
JP2006179693A (ja) | 2004-12-22 | 2006-07-06 | Shin Etsu Chem Co Ltd | ヒータ付き静電チャック |
JP4191137B2 (ja) | 2004-12-24 | 2008-12-03 | 東京エレクトロン株式会社 | 基板処理装置のクリーニング方法 |
US7365016B2 (en) | 2004-12-27 | 2008-04-29 | Dalsa Semiconductor Inc. | Anhydrous HF release of process for MEMS devices |
US20060148243A1 (en) | 2004-12-30 | 2006-07-06 | Jeng-Ho Wang | Method for fabricating a dual damascene and polymer removal |
KR100653722B1 (ko) | 2005-01-05 | 2006-12-05 | 삼성전자주식회사 | 저유전막을 갖는 반도체소자의 제조방법 |
US7465953B1 (en) | 2005-01-07 | 2008-12-16 | Board Of Regents, The University Of Texas System | Positioning of nanoparticles and fabrication of single election devices |
US7253123B2 (en) | 2005-01-10 | 2007-08-07 | Applied Materials, Inc. | Method for producing gate stack sidewall spacers |
KR100610019B1 (ko) | 2005-01-11 | 2006-08-08 | 삼성전자주식회사 | 플라즈마 분배장치 및 이를 구비하는 건식 스트리핑 장치 |
US20060162661A1 (en) | 2005-01-22 | 2006-07-27 | Applied Materials, Inc. | Mixing energized and non-energized gases for silicon nitride deposition |
US7829243B2 (en) | 2005-01-27 | 2010-11-09 | Applied Materials, Inc. | Method for plasma etching a chromium layer suitable for photomask fabrication |
JP4601439B2 (ja) | 2005-02-01 | 2010-12-22 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
GB0502149D0 (en) | 2005-02-02 | 2005-03-09 | Boc Group Inc | Method of operating a pumping system |
US7341943B2 (en) | 2005-02-08 | 2008-03-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Post etch copper cleaning using dry plasma |
US20060183270A1 (en) | 2005-02-14 | 2006-08-17 | Tessera, Inc. | Tools and methods for forming conductive bumps on microelectronic elements |
JP4475136B2 (ja) | 2005-02-18 | 2010-06-09 | 東京エレクトロン株式会社 | 処理システム、前処理装置及び記憶媒体 |
US7344912B1 (en) | 2005-03-01 | 2008-03-18 | Spansion Llc | Method for patterning electrically conducting poly(phenyl acetylene) and poly(diphenyl acetylene) |
JP4506677B2 (ja) | 2005-03-11 | 2010-07-21 | 東京エレクトロン株式会社 | 成膜方法、成膜装置及び記憶媒体 |
JP2006261217A (ja) | 2005-03-15 | 2006-09-28 | Canon Anelva Corp | 薄膜形成方法 |
JP4518986B2 (ja) | 2005-03-17 | 2010-08-04 | 東京エレクトロン株式会社 | 大気搬送室、被処理体の処理後搬送方法、プログラム及び記憶媒体 |
US20060246217A1 (en) | 2005-03-18 | 2006-11-02 | Weidman Timothy W | Electroless deposition process on a silicide contact |
US7651934B2 (en) | 2005-03-18 | 2010-01-26 | Applied Materials, Inc. | Process for electroless copper deposition |
US20060252252A1 (en) | 2005-03-18 | 2006-11-09 | Zhize Zhu | Electroless deposition processes and compositions for forming interconnects |
US20060210723A1 (en) | 2005-03-21 | 2006-09-21 | Tokyo Electron Limited | Plasma enhanced atomic layer deposition system and method |
KR100610465B1 (ko) | 2005-03-25 | 2006-08-08 | 주식회사 하이닉스반도체 | 반도체 소자의 제조 방법 |
US7442274B2 (en) | 2005-03-28 | 2008-10-28 | Tokyo Electron Limited | Plasma etching method and apparatus therefor |
US20060215347A1 (en) | 2005-03-28 | 2006-09-28 | Tokyo Electron Limited | Processing apparatus and recording medium |
KR100689826B1 (ko) | 2005-03-29 | 2007-03-08 | 삼성전자주식회사 | 불소 함유된 화학적 식각 가스를 사용하는 고밀도 플라즈마화학기상증착 방법들 및 이를 채택하여 반도체 소자를제조하는 방법들 |
JP4860167B2 (ja) | 2005-03-30 | 2012-01-25 | 東京エレクトロン株式会社 | ロードロック装置,処理システム及び処理方法 |
US20060228889A1 (en) | 2005-03-31 | 2006-10-12 | Edelberg Erik A | Methods of removing resist from substrates in resist stripping chambers |
US7789962B2 (en) | 2005-03-31 | 2010-09-07 | Tokyo Electron Limited | Device and method for controlling temperature of a mounting table, a program therefor, and a processing apparatus including same |
US7288482B2 (en) | 2005-05-04 | 2007-10-30 | International Business Machines Corporation | Silicon nitride etching methods |
US7431856B2 (en) | 2005-05-18 | 2008-10-07 | National Research Council Of Canada | Nano-tip fabrication by spatially controlled etching |
KR100731164B1 (ko) | 2005-05-19 | 2007-06-20 | 주식회사 피에조닉스 | 샤워헤드를 구비한 화학기상 증착 방법 및 장치 |
US20060266288A1 (en) | 2005-05-27 | 2006-11-30 | Applied Materials, Inc. | High plasma utilization for remote plasma clean |
JP4853857B2 (ja) | 2005-06-15 | 2012-01-11 | 東京エレクトロン株式会社 | 基板の処理方法,コンピュータ読み取り可能な記録媒体及び基板処理装置 |
US20060286774A1 (en) | 2005-06-21 | 2006-12-21 | Applied Materials. Inc. | Method for forming silicon-containing materials during a photoexcitation deposition process |
CN101010448B (zh) | 2005-06-23 | 2010-09-29 | 东京毅力科创株式会社 | 半导体处理装置用的构成部件及其制造方法 |
JP4554461B2 (ja) | 2005-07-26 | 2010-09-29 | 株式会社日立ハイテクノロジーズ | 半導体装置の製造方法 |
US7857947B2 (en) | 2005-07-27 | 2010-12-28 | Applied Materials, Inc. | Unique passivation technique for a CVD blocker plate to prevent particle formation |
US8709162B2 (en) | 2005-08-16 | 2014-04-29 | Applied Materials, Inc. | Active cooling substrate support |
US7833381B2 (en) | 2005-08-18 | 2010-11-16 | David Johnson | Optical emission interferometry for PECVD using a gas injection hole |
DE102006038885B4 (de) | 2005-08-24 | 2013-10-10 | Wonik Ips Co., Ltd. | Verfahren zum Abscheiden einer Ge-Sb-Te-Dünnschicht |
US20070056925A1 (en) | 2005-09-09 | 2007-03-15 | Lam Research Corporation | Selective etch of films with high dielectric constant with H2 addition |
US20070066084A1 (en) | 2005-09-21 | 2007-03-22 | Cory Wajda | Method and system for forming a layer with controllable spstial variation |
US20070071888A1 (en) | 2005-09-21 | 2007-03-29 | Arulkumar Shanmugasundram | Method and apparatus for forming device features in an integrated electroless deposition system |
JP4823628B2 (ja) | 2005-09-26 | 2011-11-24 | 東京エレクトロン株式会社 | 基板処理方法および記録媒体 |
DE102005047081B4 (de) | 2005-09-30 | 2019-01-31 | Robert Bosch Gmbh | Verfahren zum plasmalosen Ätzen von Silizium mit dem Ätzgas ClF3 oder XeF2 |
US8102123B2 (en) | 2005-10-04 | 2012-01-24 | Topanga Technologies, Inc. | External resonator electrode-less plasma lamp and method of exciting with radio-frequency energy |
US7438534B2 (en) | 2005-10-07 | 2008-10-21 | Edwards Vacuum, Inc. | Wide range pressure control using turbo pump |
KR100703014B1 (ko) | 2005-10-26 | 2007-04-06 | 삼성전자주식회사 | 실리콘 산화물 식각액 및 이를 이용한 반도체 소자의 제조 방법 |
US20070099806A1 (en) | 2005-10-28 | 2007-05-03 | Stewart Michael P | Composition and method for selectively removing native oxide from silicon-containing surfaces |
EP1780779A3 (en) | 2005-10-28 | 2008-06-11 | Interuniversitair Microelektronica Centrum ( Imec) | A plasma for patterning advanced gate stacks |
US7884032B2 (en) | 2005-10-28 | 2011-02-08 | Applied Materials, Inc. | Thin film deposition |
US7696101B2 (en) | 2005-11-01 | 2010-04-13 | Micron Technology, Inc. | Process for increasing feature density during the manufacture of a semiconductor device |
WO2007142690A2 (en) | 2005-11-04 | 2007-12-13 | Applied Materials, Inc. | Apparatus and process for plasma-enhanced atomic layer deposition |
US20070107750A1 (en) | 2005-11-14 | 2007-05-17 | Sawin Herbert H | Method of using NF3 for removing surface deposits from the interior of chemical vapor deposition chambers |
JP4918778B2 (ja) | 2005-11-16 | 2012-04-18 | 株式会社日立製作所 | 半導体集積回路装置の製造方法 |
US7704887B2 (en) | 2005-11-22 | 2010-04-27 | Applied Materials, Inc. | Remote plasma pre-clean with low hydrogen pressure |
US20070117396A1 (en) | 2005-11-22 | 2007-05-24 | Dingjun Wu | Selective etching of titanium nitride with xenon difluoride |
US7662723B2 (en) | 2005-12-13 | 2010-02-16 | Lam Research Corporation | Methods and apparatus for in-situ substrate processing |
US7405160B2 (en) | 2005-12-13 | 2008-07-29 | Tokyo Electron Limited | Method of making semiconductor device |
US7449538B2 (en) | 2005-12-30 | 2008-11-11 | Hynix Semiconductor Inc. | Hard mask composition and method for manufacturing semiconductor device |
JP2007191792A (ja) | 2006-01-19 | 2007-08-02 | Atto Co Ltd | ガス分離型シャワーヘッド |
KR100712727B1 (ko) | 2006-01-26 | 2007-05-04 | 주식회사 아토 | 절연체를 이용한 샤워헤드 |
US8173228B2 (en) | 2006-01-27 | 2012-05-08 | Applied Materials, Inc. | Particle reduction on surfaces of chemical vapor deposition processing apparatus |
US7494545B2 (en) | 2006-02-03 | 2009-02-24 | Applied Materials, Inc. | Epitaxial deposition process and apparatus |
KR100752622B1 (ko) | 2006-02-17 | 2007-08-30 | 한양대학교 산학협력단 | 원거리 플라즈마 발생장치 |
US20070207275A1 (en) | 2006-02-21 | 2007-09-06 | Applied Materials, Inc. | Enhancement of remote plasma source clean for dielectric films |
CN101378850A (zh) | 2006-02-21 | 2009-03-04 | 应用材料股份有限公司 | 加强用于介电膜层的远程等离子体源清洁 |
AU2007227602A1 (en) | 2006-03-16 | 2007-09-27 | Novartis Ag | Heterocyclic organic compounds for the treatment of in particular melanoma |
US7977245B2 (en) | 2006-03-22 | 2011-07-12 | Applied Materials, Inc. | Methods for etching a dielectric barrier layer with high selectivity |
US7381651B2 (en) | 2006-03-22 | 2008-06-03 | Axcelis Technologies, Inc. | Processes for monitoring the levels of oxygen and/or nitrogen species in a substantially oxygen and nitrogen-free plasma ashing process |
US8343280B2 (en) | 2006-03-28 | 2013-01-01 | Tokyo Electron Limited | Multi-zone substrate temperature control system and method of operating |
US7628574B2 (en) | 2006-03-28 | 2009-12-08 | Arcus Technology, Inc. | Apparatus and method for processing substrates using one or more vacuum transfer chamber units |
US7780865B2 (en) | 2006-03-31 | 2010-08-24 | Applied Materials, Inc. | Method to improve the step coverage and pattern loading for dielectric films |
US7906032B2 (en) | 2006-03-31 | 2011-03-15 | Tokyo Electron Limited | Method for conditioning a process chamber |
JP5042517B2 (ja) | 2006-04-10 | 2012-10-03 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
CN100539080C (zh) | 2006-04-12 | 2009-09-09 | 中芯国际集成电路制造(上海)有限公司 | 通过自对准形成多晶硅浮栅结构的方法 |
US20070243714A1 (en) | 2006-04-18 | 2007-10-18 | Applied Materials, Inc. | Method of controlling silicon-containing polymer build up during etching by using a periodic cleaning step |
US7488685B2 (en) | 2006-04-25 | 2009-02-10 | Micron Technology, Inc. | Process for improving critical dimension uniformity of integrated circuit arrays |
US8226769B2 (en) | 2006-04-27 | 2012-07-24 | Applied Materials, Inc. | Substrate support with electrostatic chuck having dual temperature zones |
US20070254169A1 (en) | 2006-04-28 | 2007-11-01 | Kamins Theodore I | Structures including organic self-assembled monolayers and methods of making the structures |
US7297564B1 (en) | 2006-05-02 | 2007-11-20 | Sharp Laboratories Of America, Inc. | Fabrication of vertical sidewalls on (110) silicon substrates for use in Si/SiGe photodetectors |
US7601607B2 (en) | 2006-05-15 | 2009-10-13 | Chartered Semiconductor Manufacturing, Ltd. | Protruded contact and insertion of inter-layer-dielectric material to match damascene hardmask to improve undercut for low-k interconnects |
JP5578389B2 (ja) | 2006-05-16 | 2014-08-27 | Nltテクノロジー株式会社 | 積層膜パターン形成方法及びゲート電極形成方法 |
US20070266946A1 (en) | 2006-05-22 | 2007-11-22 | Byung-Chul Choi | Semiconductor device manufacturing apparatus and method of using the same |
JP5119609B2 (ja) | 2006-05-25 | 2013-01-16 | 東京エレクトロン株式会社 | 成膜方法、成膜装置及び記憶媒体、並びに半導体装置 |
US20070289534A1 (en) | 2006-05-30 | 2007-12-20 | Applied Materials, Inc. | Process chamber for dielectric gapfill |
US7825038B2 (en) | 2006-05-30 | 2010-11-02 | Applied Materials, Inc. | Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen |
US20070281106A1 (en) | 2006-05-30 | 2007-12-06 | Applied Materials, Inc. | Process chamber for dielectric gapfill |
US7790634B2 (en) | 2006-05-30 | 2010-09-07 | Applied Materials, Inc | Method for depositing and curing low-k films for gapfill and conformal film applications |
US20070277734A1 (en) | 2006-05-30 | 2007-12-06 | Applied Materials, Inc. | Process chamber for dielectric gapfill |
US7665951B2 (en) | 2006-06-02 | 2010-02-23 | Applied Materials, Inc. | Multiple slot load lock chamber and method of operation |
JP5069427B2 (ja) | 2006-06-13 | 2012-11-07 | 北陸成型工業株式会社 | シャワープレート、並びにそれを用いたプラズマ処理装置、プラズマ処理方法及び電子装置の製造方法 |
US7932181B2 (en) | 2006-06-20 | 2011-04-26 | Lam Research Corporation | Edge gas injection for critical dimension uniformity improvement |
US8232176B2 (en) | 2006-06-22 | 2012-07-31 | Applied Materials, Inc. | Dielectric deposition and etch back processes for bottom up gapfill |
US20070296967A1 (en) | 2006-06-27 | 2007-12-27 | Bhupendra Kumra Gupta | Analysis of component for presence, composition and/or thickness of coating |
US8114781B2 (en) | 2006-06-29 | 2012-02-14 | Tokyo Electron Limited | Substrate processing method and substrate processing apparatus |
US7416989B1 (en) | 2006-06-30 | 2008-08-26 | Novellus Systems, Inc. | Adsorption based material removal process |
US7618889B2 (en) | 2006-07-18 | 2009-11-17 | Applied Materials, Inc. | Dual damascene fabrication with low k materials |
US9275887B2 (en) | 2006-07-20 | 2016-03-01 | Applied Materials, Inc. | Substrate processing with rapid temperature gradient control |
GB0616131D0 (en) | 2006-08-14 | 2006-09-20 | Oxford Instr Plasma Technology | Surface processing apparatus |
US20080045030A1 (en) | 2006-08-15 | 2008-02-21 | Shigeru Tahara | Substrate processing method, substrate processing system and storage medium |
US20080124937A1 (en) | 2006-08-16 | 2008-05-29 | Songlin Xu | Selective etching method and apparatus |
KR100761757B1 (ko) | 2006-08-17 | 2007-09-28 | 삼성전자주식회사 | 막 형성 방법 |
KR100818708B1 (ko) | 2006-08-18 | 2008-04-01 | 주식회사 하이닉스반도체 | 표면 세정을 포함하는 반도체소자 제조방법 |
US8110787B1 (en) | 2006-08-23 | 2012-02-07 | ON Semiconductor Trading, Ltd | Image sensor with a reflective waveguide |
US20080063810A1 (en) | 2006-08-23 | 2008-03-13 | Applied Materials, Inc. | In-situ process state monitoring of chamber |
US7575007B2 (en) | 2006-08-23 | 2009-08-18 | Applied Materials, Inc. | Chamber recovery after opening barrier over copper |
US7611980B2 (en) | 2006-08-30 | 2009-11-03 | Micron Technology, Inc. | Single spacer process for multiplying pitch by a factor greater than two and related intermediate IC structures |
US7452766B2 (en) | 2006-08-31 | 2008-11-18 | Micron Technology, Inc. | Finned memory cells and the fabrication thereof |
US20080075668A1 (en) | 2006-09-27 | 2008-03-27 | Goldstein Alan H | Security Device Using Reversibly Self-Assembling Systems |
CN101153396B (zh) | 2006-09-30 | 2010-06-09 | 中芯国际集成电路制造(上海)有限公司 | 等离子刻蚀方法 |
JP2008103645A (ja) | 2006-10-20 | 2008-05-01 | Toshiba Corp | 半導体装置の製造方法 |
US7655571B2 (en) | 2006-10-26 | 2010-02-02 | Applied Materials, Inc. | Integrated method and apparatus for efficient removal of halogen residues from etched substrates |
US20080099147A1 (en) | 2006-10-26 | 2008-05-01 | Nyi Oo Myo | Temperature controlled multi-gas distribution assembly |
JP2008109043A (ja) | 2006-10-27 | 2008-05-08 | Oki Electric Ind Co Ltd | 半導体装置の製造方法および半導体装置 |
US8002946B2 (en) | 2006-10-30 | 2011-08-23 | Applied Materials, Inc. | Mask etch plasma reactor with cathode providing a uniform distribution of etch rate |
US20080102640A1 (en) | 2006-10-30 | 2008-05-01 | Applied Materials, Inc. | Etching oxide with high selectivity to titanium nitride |
US7943005B2 (en) | 2006-10-30 | 2011-05-17 | Applied Materials, Inc. | Method and apparatus for photomask plasma etching |
US7880232B2 (en) | 2006-11-01 | 2011-02-01 | Micron Technology, Inc. | Processes and apparatus having a semiconductor fin |
US7725974B2 (en) | 2006-11-02 | 2010-06-01 | Hughes Randall L | Shoe and foot cleaning and disinfecting system |
US20080193673A1 (en) | 2006-12-05 | 2008-08-14 | Applied Materials, Inc. | Method of processing a workpiece using a mid-chamber gas distribution plate, tuned plasma flow control grid and electrode |
US7939422B2 (en) | 2006-12-07 | 2011-05-10 | Applied Materials, Inc. | Methods of thin film process |
KR20090094368A (ko) | 2006-12-11 | 2009-09-04 | 어플라이드 머티어리얼스, 인코포레이티드 | 건식 포토레지스트 스트립핑 프로세스 및 장치 |
TWM318795U (en) | 2006-12-18 | 2007-09-11 | Lighthouse Technology Co Ltd | Package structure |
US20100059889A1 (en) | 2006-12-20 | 2010-03-11 | Nxp, B.V. | Adhesion of diffusion barrier on copper-containing interconnect element |
US7922863B2 (en) | 2006-12-22 | 2011-04-12 | Applied Materials, Inc. | Apparatus for integrated gas and radiation delivery |
JP5229711B2 (ja) | 2006-12-25 | 2013-07-03 | 国立大学法人名古屋大学 | パターン形成方法、および半導体装置の製造方法 |
JP2008163430A (ja) | 2006-12-28 | 2008-07-17 | Jtekt Corp | 高耐食性部材およびその製造方法 |
US20080157225A1 (en) | 2006-12-29 | 2008-07-03 | Suman Datta | SRAM and logic transistors with variable height multi-gate transistor architecture |
KR20080063988A (ko) | 2007-01-03 | 2008-07-08 | 삼성전자주식회사 | 중성빔을 이용한 식각장치 |
US8097105B2 (en) | 2007-01-11 | 2012-01-17 | Lam Research Corporation | Extending lifetime of yttrium oxide as a plasma chamber material |
JP5168907B2 (ja) | 2007-01-15 | 2013-03-27 | 東京エレクトロン株式会社 | プラズマ処理装置、プラズマ処理方法及び記憶媒体 |
JP4421618B2 (ja) | 2007-01-17 | 2010-02-24 | 東京エレクトロン株式会社 | フィン型電界効果トランジスタの製造方法 |
US7728364B2 (en) | 2007-01-19 | 2010-06-01 | International Business Machines Corporation | Enhanced mobility CMOS transistors with a V-shaped channel with self-alignment to shallow trench isolation |
JP4299863B2 (ja) | 2007-01-22 | 2009-07-22 | エルピーダメモリ株式会社 | 半導体装置の製造方法 |
US8444926B2 (en) | 2007-01-30 | 2013-05-21 | Applied Materials, Inc. | Processing chamber with heated chamber liner |
JP5048352B2 (ja) | 2007-01-31 | 2012-10-17 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
KR100878015B1 (ko) | 2007-01-31 | 2009-01-13 | 삼성전자주식회사 | 산화물 제거 방법 및 이를 이용한 트렌치 매립 방법 |
US20080188090A1 (en) | 2007-02-02 | 2008-08-07 | Applied Materials, Inc. | Internal balanced coil for inductively coupled high density plasma processing chamber |
US7789993B2 (en) | 2007-02-02 | 2010-09-07 | Applied Materials, Inc. | Internal balanced coil for inductively coupled high density plasma processing chamber |
KR100843236B1 (ko) | 2007-02-06 | 2008-07-03 | 삼성전자주식회사 | 더블 패터닝 공정을 이용하는 반도체 소자의 미세 패턴형성 방법 |
JP2008205219A (ja) | 2007-02-20 | 2008-09-04 | Masato Toshima | シャワーヘッドおよびこれを用いたcvd装置 |
US20080202892A1 (en) | 2007-02-27 | 2008-08-28 | Smith John M | Stacked process chambers for substrate vacuum processing tool |
CN100577866C (zh) | 2007-02-27 | 2010-01-06 | 中微半导体设备(上海)有限公司 | 应用于等离子体反应室中的气体喷头组件、其制造方法及其翻新再利用的方法 |
US20080216901A1 (en) | 2007-03-06 | 2008-09-11 | Mks Instruments, Inc. | Pressure control for vacuum processing system |
US7977249B1 (en) | 2007-03-07 | 2011-07-12 | Novellus Systems, Inc. | Methods for removing silicon nitride and other materials during fabrication of contacts |
US20080216958A1 (en) | 2007-03-07 | 2008-09-11 | Novellus Systems, Inc. | Plasma Reaction Apparatus Having Pre-Seasoned Showerheads and Methods for Manufacturing the Same |
CN101681870B (zh) | 2007-03-12 | 2011-08-17 | 东京毅力科创株式会社 | 用于提高衬底内处理均匀性的动态温度背部气体控制 |
KR100853485B1 (ko) | 2007-03-19 | 2008-08-21 | 주식회사 하이닉스반도체 | 리세스 게이트를 갖는 반도체 소자의 제조 방법 |
US20080233709A1 (en) | 2007-03-22 | 2008-09-25 | Infineon Technologies North America Corp. | Method for removing material from a semiconductor |
US7815814B2 (en) | 2007-03-23 | 2010-10-19 | Tokyo Electron Limited | Method and system for dry etching a metal nitride |
JP4418027B2 (ja) | 2007-03-28 | 2010-02-17 | キヤノンアネルバ株式会社 | 真空処理装置 |
JP4988402B2 (ja) | 2007-03-30 | 2012-08-01 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
US8235001B2 (en) | 2007-04-02 | 2012-08-07 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and method for manufacturing semiconductor device |
JP5179476B2 (ja) | 2007-04-17 | 2013-04-10 | 株式会社アルバック | 成膜装置 |
JP5282419B2 (ja) | 2007-04-18 | 2013-09-04 | ソニー株式会社 | 半導体装置及びその製造方法 |
JP5135879B2 (ja) | 2007-05-21 | 2013-02-06 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法 |
KR100777043B1 (ko) | 2007-05-22 | 2007-11-16 | 주식회사 테스 | 비정질 탄소막 형성 방법 및 이를 이용한 반도체 소자의제조 방법 |
US8084105B2 (en) | 2007-05-23 | 2011-12-27 | Applied Materials, Inc. | Method of depositing boron nitride and boron nitride-derived materials |
US7942969B2 (en) | 2007-05-30 | 2011-05-17 | Applied Materials, Inc. | Substrate cleaning chamber and components |
US7807578B2 (en) | 2007-06-01 | 2010-10-05 | Applied Materials, Inc. | Frequency doubling using spacer mask |
US20090004873A1 (en) | 2007-06-26 | 2009-01-01 | Intevac, Inc. | Hybrid etch chamber with decoupled plasma controls |
US7585716B2 (en) | 2007-06-27 | 2009-09-08 | International Business Machines Corporation | High-k/metal gate MOSFET with reduced parasitic capacitance |
JP5008478B2 (ja) | 2007-06-27 | 2012-08-22 | 東京エレクトロン株式会社 | 基板処理装置およびシャワーヘッド |
US20090000641A1 (en) | 2007-06-28 | 2009-01-01 | Applied Materials, Inc. | Methods and apparatus for cleaning deposition chamber parts using selective spray etch |
KR100877107B1 (ko) | 2007-06-28 | 2009-01-07 | 주식회사 하이닉스반도체 | 반도체 소자의 층간절연막 형성방법 |
JP4438008B2 (ja) | 2007-06-29 | 2010-03-24 | 東京エレクトロン株式会社 | 基板処理装置 |
US8021514B2 (en) | 2007-07-11 | 2011-09-20 | Applied Materials, Inc. | Remote plasma source for pre-treatment of substrates prior to deposition |
US8197636B2 (en) | 2007-07-12 | 2012-06-12 | Applied Materials, Inc. | Systems for plasma enhanced chemical vapor deposition and bevel edge etching |
JP5660753B2 (ja) | 2007-07-13 | 2015-01-28 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | プラズマエッチング用高温カソード |
DE102007033685A1 (de) | 2007-07-19 | 2009-01-22 | Robert Bosch Gmbh | Verfahren zum Ätzen einer Schicht auf einem Silizium-Halbleitersubstrat |
JP5583011B2 (ja) | 2007-07-19 | 2014-09-03 | コーニンクレッカ フィリップス エヌ ヴェ | 照明装置データを送信するための方法、システム及び装置 |
US8008166B2 (en) | 2007-07-26 | 2011-08-30 | Applied Materials, Inc. | Method and apparatus for cleaning a substrate surface |
US8108981B2 (en) | 2007-07-31 | 2012-02-07 | Applied Materials, Inc. | Method of making an electrostatic chuck with reduced plasma penetration and arcing |
US9202736B2 (en) | 2007-07-31 | 2015-12-01 | Applied Materials, Inc. | Method for refurbishing an electrostatic chuck with reduced plasma penetration and arcing |
US7848076B2 (en) | 2007-07-31 | 2010-12-07 | Applied Materials, Inc. | Method and apparatus for providing an electrostatic chuck with reduced plasma penetration and arcing |
EP2042516A1 (en) | 2007-09-27 | 2009-04-01 | Protaffin Biotechnologie AG | Glycosaminoglycan-antagonising MCP-1 mutants and methods of using same |
US8367227B2 (en) | 2007-08-02 | 2013-02-05 | Applied Materials, Inc. | Plasma-resistant ceramics with controlled electrical resistivity |
WO2009025392A2 (en) | 2007-08-21 | 2009-02-26 | Panasonic Corporation | Plasma processing device and method of monitoring plasma discharge state in plasma processing device |
WO2009028480A1 (ja) | 2007-08-31 | 2009-03-05 | Tokyo Electron Limited | 半導体装置の製造方法 |
JP5347294B2 (ja) | 2007-09-12 | 2013-11-20 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
US20120122319A1 (en) | 2007-09-19 | 2012-05-17 | Hironobu Shimizu | Coating method for coating reaction tube prior to film forming process |
US7781332B2 (en) | 2007-09-19 | 2010-08-24 | International Business Machines Corporation | Methods to mitigate plasma damage in organosilicate dielectrics using a protective sidewall spacer |
WO2009042137A2 (en) | 2007-09-25 | 2009-04-02 | Lam Research Corporation | Temperature control modules for showerhead electrode assemblies for plasma processing apparatuses |
US8298931B2 (en) | 2007-09-28 | 2012-10-30 | Sandisk 3D Llc | Dual damascene with amorphous carbon for 3D deep via/trench application |
US20090084317A1 (en) | 2007-09-28 | 2009-04-02 | Applied Materials, Inc. | Atomic layer deposition chamber and components |
US7838361B2 (en) | 2007-09-28 | 2010-11-23 | Hynix Semiconductor Inc. | Method for fabricating recess gate in semiconductor device |
WO2009049020A2 (en) | 2007-10-11 | 2009-04-16 | Valence Process Equipment, Inc. | Chemical vapor deposition reactor |
US7838390B2 (en) | 2007-10-12 | 2010-11-23 | Samsung Electronics Co., Ltd. | Methods of forming integrated circuit devices having ion-cured electrically insulating layers therein |
US20090095222A1 (en) | 2007-10-16 | 2009-04-16 | Alexander Tam | Multi-gas spiral channel showerhead |
US7976631B2 (en) | 2007-10-16 | 2011-07-12 | Applied Materials, Inc. | Multi-gas straight channel showerhead |
US7871926B2 (en) | 2007-10-22 | 2011-01-18 | Applied Materials, Inc. | Methods and systems for forming at least one dielectric layer |
US8252696B2 (en) | 2007-10-22 | 2012-08-28 | Applied Materials, Inc. | Selective etching of silicon nitride |
US7541297B2 (en) | 2007-10-22 | 2009-06-02 | Applied Materials, Inc. | Method and system for improving dielectric film quality for void free gap fill |
US8622021B2 (en) | 2007-10-31 | 2014-01-07 | Lam Research Corporation | High lifetime consumable silicon nitride-silicon dioxide plasma processing components |
WO2009058376A2 (en) | 2007-10-31 | 2009-05-07 | Lam Research Corporation | Temperature control module using gas pressure to control thermal conductance between liquid coolant and component body |
EP2208221A4 (en) | 2007-11-01 | 2010-12-15 | Eugene Technology Co Ltd | DEVICE FOR WAFER SURFACE TREATMENT USING AN INDUCTIVE COUPLED HIGH-FREQUENCY PLASMA |
US20090120368A1 (en) | 2007-11-08 | 2009-05-14 | Applied Materials, Inc. | Rotating temperature controlled substrate pedestal for film uniformity |
US20090120584A1 (en) | 2007-11-08 | 2009-05-14 | Applied Materials, Inc. | Counter-balanced substrate support |
KR101573949B1 (ko) | 2007-11-08 | 2015-12-02 | 램 리써치 코포레이션 | 산화물 스페이서를 이용한 피치 감소 |
US7964040B2 (en) | 2007-11-08 | 2011-06-21 | Applied Materials, Inc. | Multi-port pumping system for substrate processing chambers |
JP5172617B2 (ja) | 2007-11-12 | 2013-03-27 | シャープ株式会社 | 気相成長装置及び気相成長方法 |
US7704849B2 (en) | 2007-12-03 | 2010-04-27 | Micron Technology, Inc. | Methods of forming trench isolation in silicon of a semiconductor substrate by plasma |
EP2227831A2 (de) | 2007-12-04 | 2010-09-15 | Parabel Ag | Mehrschichtiges solarelement |
US8187486B1 (en) | 2007-12-13 | 2012-05-29 | Novellus Systems, Inc. | Modulating etch selectivity and etch rate of silicon nitride thin films |
US8512509B2 (en) | 2007-12-19 | 2013-08-20 | Applied Materials, Inc. | Plasma reactor gas distribution plate with radially distributed path splitting manifold |
US8129029B2 (en) | 2007-12-21 | 2012-03-06 | Applied Materials, Inc. | Erosion-resistant plasma chamber components comprising a metal base structure with an overlying thermal oxidation coating |
US7989329B2 (en) | 2007-12-21 | 2011-08-02 | Applied Materials, Inc. | Removal of surface dopants from a substrate |
KR20100103627A (ko) | 2007-12-21 | 2010-09-27 | 어플라이드 머티어리얼스, 인코포레이티드 | 기판의 온도를 제어하기 위한 방법 및 장치 |
US20090170331A1 (en) | 2007-12-27 | 2009-07-02 | International Business Machines Corporation | Method of forming a bottle-shaped trench by ion implantation |
US7910477B2 (en) | 2007-12-28 | 2011-03-22 | Texas Instruments Incorporated | Etch residue reduction by ash methodology |
WO2009084194A1 (en) | 2007-12-28 | 2009-07-09 | Tokyo Electron Limited | Etching method for metal film and metal oxide film, and manufacturing method for semiconductor device |
US8018023B2 (en) | 2008-01-14 | 2011-09-13 | Kabushiki Kaisha Toshiba | Trench sidewall protection by a carbon-rich layer in a semiconductor device |
US7998864B2 (en) | 2008-01-29 | 2011-08-16 | International Business Machines Corporation | Noble metal cap for interconnect structures |
TW200933812A (en) | 2008-01-30 | 2009-08-01 | Promos Technologies Inc | Process for forming trench isolation structure and semiconductor device produced thereby |
US20090191711A1 (en) | 2008-01-30 | 2009-07-30 | Ying Rui | Hardmask open process with enhanced cd space shrink and reduction |
US20090194810A1 (en) | 2008-01-31 | 2009-08-06 | Masahiro Kiyotoshi | Semiconductor device using element isolation region of trench isolation structure and manufacturing method thereof |
KR101259484B1 (ko) | 2008-02-26 | 2013-05-06 | 쿄세라 코포레이션 | 웨이퍼 지지 부재와 그 제조 방법, 및 이것을 사용한 정전 척 |
US20090214825A1 (en) | 2008-02-26 | 2009-08-27 | Applied Materials, Inc. | Ceramic coating comprising yttrium which is resistant to a reducing plasma |
JP5188849B2 (ja) | 2008-03-14 | 2013-04-24 | Sppテクノロジーズ株式会社 | プラズマ処理装置 |
US9520275B2 (en) | 2008-03-21 | 2016-12-13 | Tokyo Electron Limited | Mono-energetic neutral beam activated chemical processing system and method of using |
JP5352103B2 (ja) | 2008-03-27 | 2013-11-27 | 東京エレクトロン株式会社 | 熱処理装置および処理システム |
DE102008016425B4 (de) | 2008-03-31 | 2015-11-19 | Advanced Micro Devices, Inc. | Verfahren zur Strukturierung einer Metallisierungsschicht durch Verringerung der durch Lackentfernung hervorgerufenen Schäden des dielektrischen Materials |
US20090258162A1 (en) | 2008-04-12 | 2009-10-15 | Applied Materials, Inc. | Plasma processing apparatus and method |
US8022377B2 (en) | 2008-04-22 | 2011-09-20 | Applied Materials, Inc. | Method and apparatus for excimer curing |
JP2009266952A (ja) | 2008-04-23 | 2009-11-12 | Seiko Epson Corp | デバイスの製造方法及び製造装置 |
US8409355B2 (en) | 2008-04-24 | 2013-04-02 | Applied Materials, Inc. | Low profile process kit |
US7977246B2 (en) | 2008-04-25 | 2011-07-12 | Applied Materials, Inc. | Thermal annealing method for preventing defects in doped silicon oxide surfaces during exposure to atmosphere |
US8252194B2 (en) | 2008-05-02 | 2012-08-28 | Micron Technology, Inc. | Methods of removing silicon oxide |
US20090275206A1 (en) | 2008-05-05 | 2009-11-05 | Applied Materials, Inc. | Plasma process employing multiple zone gas distribution for improved uniformity of critical dimension bias |
US20090274590A1 (en) | 2008-05-05 | 2009-11-05 | Applied Materials, Inc. | Plasma reactor electrostatic chuck having a coaxial rf feed and multizone ac heater power transmission through the coaxial feed |
US20090277874A1 (en) | 2008-05-09 | 2009-11-12 | Applied Materials, Inc. | Method and apparatus for removing polymer from a substrate |
US20090277587A1 (en) | 2008-05-09 | 2009-11-12 | Applied Materials, Inc. | Flowable dielectric equipment and processes |
US8357435B2 (en) | 2008-05-09 | 2013-01-22 | Applied Materials, Inc. | Flowable dielectric equipment and processes |
US8277670B2 (en) | 2008-05-13 | 2012-10-02 | Lam Research Corporation | Plasma process with photoresist mask pretreatment |
US8333842B2 (en) | 2008-05-15 | 2012-12-18 | Applied Materials, Inc. | Apparatus for etching semiconductor wafers |
KR100998011B1 (ko) | 2008-05-22 | 2010-12-03 | 삼성엘이디 주식회사 | 화학기상 증착장치 |
KR101006848B1 (ko) | 2008-05-28 | 2011-01-14 | 주식회사 코미코 | 기판 지지 장치 및 이를 포함하는 기판 처리 장치 |
DE102008026134A1 (de) | 2008-05-30 | 2009-12-17 | Advanced Micro Devices, Inc., Sunnyvale | Mikrostrukturbauelement mit einer Metallisierungsstruktur mit selbstjustierten Luftspalten zwischen dichtliegenden Metallleitungen |
KR20090128913A (ko) | 2008-06-11 | 2009-12-16 | 성균관대학교산학협력단 | 태양전지용 실리콘 기판의 텍스처링 장치 및 그 방법 |
JP2010003826A (ja) | 2008-06-19 | 2010-01-07 | Toshiba Corp | 半導体装置の製造方法 |
JP5222040B2 (ja) | 2008-06-25 | 2013-06-26 | 東京エレクトロン株式会社 | マイクロ波プラズマ処理装置 |
CN101932750B (zh) | 2008-06-27 | 2014-05-07 | 三菱重工业株式会社 | 真空处理装置及真空处理装置的运转方法 |
JP5211332B2 (ja) | 2008-07-01 | 2013-06-12 | 株式会社ユーテック | プラズマcvd装置、dlc膜及び薄膜の製造方法 |
US8161906B2 (en) | 2008-07-07 | 2012-04-24 | Lam Research Corporation | Clamped showerhead electrode assembly |
US8206506B2 (en) | 2008-07-07 | 2012-06-26 | Lam Research Corporation | Showerhead electrode |
CN102089867B (zh) | 2008-07-11 | 2013-11-27 | 东京毅力科创株式会社 | 等离子体处理装置 |
KR20110036933A (ko) | 2008-07-11 | 2011-04-12 | 어플라이드 머티어리얼스, 인코포레이티드 | Cvd 적용을 위한 챔버 구성요소 |
WO2010008021A1 (ja) | 2008-07-15 | 2010-01-21 | キヤノンアネルバ株式会社 | プラズマ処理方法及びプラズマ処理装置 |
US8336188B2 (en) | 2008-07-17 | 2012-12-25 | Formfactor, Inc. | Thin wafer chuck |
JP2011253832A (ja) | 2008-07-24 | 2011-12-15 | Canon Anelva Corp | レジストトリミング方法及びトリミング装置 |
KR20100013980A (ko) | 2008-08-01 | 2010-02-10 | 주식회사 하이닉스반도체 | 반도체 소자의 소자 분리막 형성 방법 |
US20100025370A1 (en) | 2008-08-04 | 2010-02-04 | Applied Materials, Inc. | Reactive gas distributor, reactive gas treatment system, and reactive gas treatment method |
WO2010019430A2 (en) | 2008-08-12 | 2010-02-18 | Applied Materials, Inc. | Electrostatic chuck assembly |
US7972968B2 (en) | 2008-08-18 | 2011-07-05 | Applied Materials, Inc. | High density plasma gapfill deposition-etch-deposition process etchant |
US9222172B2 (en) | 2008-08-20 | 2015-12-29 | Applied Materials, Inc. | Surface treated aluminum nitride baffle |
US8702902B2 (en) | 2008-08-20 | 2014-04-22 | Vision Dynamics Holding B.V. | Device for generating a plasma discharge for patterning the surface of a substrate |
US8268729B2 (en) | 2008-08-21 | 2012-09-18 | International Business Machines Corporation | Smooth and vertical semiconductor fin structure |
KR100997502B1 (ko) | 2008-08-26 | 2010-11-30 | 금호석유화학 주식회사 | 개환된 프탈릭 언하이드라이드를 포함하는 유기 반사 방지막 조성물과 이의 제조방법 |
KR101025741B1 (ko) | 2008-09-02 | 2011-04-04 | 주식회사 하이닉스반도체 | 수직 채널 트랜지스터의 활성필라 제조방법 |
US8871645B2 (en) | 2008-09-11 | 2014-10-28 | Applied Materials, Inc. | Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof |
US8168268B2 (en) | 2008-12-12 | 2012-05-01 | Ovishinsky Innovation, LLC | Thin film deposition via a spatially-coordinated and time-synchronized process |
US7709396B2 (en) | 2008-09-19 | 2010-05-04 | Applied Materials, Inc. | Integral patterning of large features along with array using spacer mask patterning process flow |
US20100081285A1 (en) | 2008-09-30 | 2010-04-01 | Tokyo Electron Limited | Apparatus and Method for Improving Photoresist Properties |
US7968441B2 (en) | 2008-10-08 | 2011-06-28 | Applied Materials, Inc. | Dopant activation anneal to achieve less dopant diffusion (better USJ profile) and higher activation percentage |
US7928003B2 (en) | 2008-10-10 | 2011-04-19 | Applied Materials, Inc. | Air gap interconnects using carbon-based films |
US7910491B2 (en) | 2008-10-16 | 2011-03-22 | Applied Materials, Inc. | Gapfill improvement with low etch rate dielectric liners |
US8207470B2 (en) | 2008-10-20 | 2012-06-26 | Industry-University Cooperation Foundation Hanyang University | Apparatus for generating remote plasma |
US20100099263A1 (en) | 2008-10-20 | 2010-04-22 | Applied Materials, Inc. | Nf3/h2 remote plasma process with high etch selectivity of psg/bpsg over thermal oxide and low density surface defects |
CN102197714A (zh) | 2008-10-21 | 2011-09-21 | 应用材料股份有限公司 | 清洁腔室及工艺所用的等离子体源 |
US8173547B2 (en) | 2008-10-23 | 2012-05-08 | Lam Research Corporation | Silicon etch with passivation using plasma enhanced oxidation |
US20100101727A1 (en) | 2008-10-27 | 2010-04-29 | Helin Ji | Capacitively coupled remote plasma source with large operating pressure range |
JP5396065B2 (ja) | 2008-10-28 | 2014-01-22 | 株式会社日立製作所 | 半導体装置の製造方法 |
US8206829B2 (en) | 2008-11-10 | 2012-06-26 | Applied Materials, Inc. | Plasma resistant coatings for plasma chamber components |
US20100116788A1 (en) | 2008-11-12 | 2010-05-13 | Lam Research Corporation | Substrate temperature control by using liquid controlled multizone substrate support |
JP5358165B2 (ja) | 2008-11-26 | 2013-12-04 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置の製造方法 |
US20100144140A1 (en) | 2008-12-10 | 2010-06-10 | Novellus Systems, Inc. | Methods for depositing tungsten films having low resistivity for gapfill applications |
US20100147219A1 (en) | 2008-12-12 | 2010-06-17 | Jui Hai Hsieh | High temperature and high voltage electrode assembly design |
US8540844B2 (en) | 2008-12-19 | 2013-09-24 | Lam Research Corporation | Plasma confinement structures in plasma processing systems |
US8869741B2 (en) | 2008-12-19 | 2014-10-28 | Lam Research Corporation | Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber |
US8058179B1 (en) | 2008-12-23 | 2011-11-15 | Novellus Systems, Inc. | Atomic layer removal process with higher etch amount |
JP2010154699A (ja) | 2008-12-26 | 2010-07-08 | Hitachi Ltd | 磁束可変型回転電機 |
US20100183825A1 (en) | 2008-12-31 | 2010-07-22 | Cambridge Nanotech Inc. | Plasma atomic layer deposition system and method |
KR101587601B1 (ko) | 2009-01-14 | 2016-01-25 | 삼성전자주식회사 | 비휘발성 메모리 장치의 제조 방법 |
US20100187694A1 (en) | 2009-01-28 | 2010-07-29 | Chen-Hua Yu | Through-Silicon Via Sidewall Isolation Structure |
KR20100087915A (ko) | 2009-01-29 | 2010-08-06 | 삼성전자주식회사 | 실린더형 스토리지 노드를 포함하는 반도체 메모리 소자 및그 제조 방법 |
US7964517B2 (en) | 2009-01-29 | 2011-06-21 | Texas Instruments Incorporated | Use of a biased precoat for reduced first wafer defects in high-density plasma process |
KR101795658B1 (ko) | 2009-01-31 | 2017-11-08 | 어플라이드 머티어리얼스, 인코포레이티드 | 에칭을 위한 방법 및 장치 |
KR101527195B1 (ko) | 2009-02-02 | 2015-06-10 | 삼성전자주식회사 | 수직 구조의 비휘발성 메모리 소자 |
JP5210191B2 (ja) | 2009-02-03 | 2013-06-12 | 東京エレクトロン株式会社 | 窒化珪素膜のドライエッチング方法 |
JP2010180458A (ja) | 2009-02-06 | 2010-08-19 | Kit:Kk | アルミニウム表面の酸化層形成方法及び半導体装置の製造方法 |
US8992723B2 (en) | 2009-02-13 | 2015-03-31 | Applied Material, Inc. | RF bus and RF return bus for plasma chamber electrode |
KR101566922B1 (ko) | 2009-02-16 | 2015-11-09 | 삼성전자주식회사 | 저스트 드라이 에칭과 케미컬 드라이 에칭을 조합한 반도체소자의 금속 실리사이드막 형성 방법 |
US8148749B2 (en) | 2009-02-19 | 2012-04-03 | Fairchild Semiconductor Corporation | Trench-shielded semiconductor device |
WO2010102125A2 (en) | 2009-03-05 | 2010-09-10 | Applied Materials, Inc. | Inductively coupled plasma reactor having rf phase control and methods of use thereof |
CN102007565A (zh) | 2009-03-17 | 2011-04-06 | 德国罗特·劳股份有限公司 | 基片处理系统和基片处理方法 |
KR101539699B1 (ko) | 2009-03-19 | 2015-07-27 | 삼성전자주식회사 | 3차원 구조의 비휘발성 메모리 소자 및 그 제조방법 |
US8312839B2 (en) | 2009-03-24 | 2012-11-20 | Applied Materials, Inc. | Mixing frequency at multiple feeding points |
JP5657262B2 (ja) | 2009-03-27 | 2015-01-21 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP5501807B2 (ja) | 2009-03-31 | 2014-05-28 | 東京エレクトロン株式会社 | 処理装置 |
KR101534357B1 (ko) | 2009-03-31 | 2015-07-06 | 도쿄엘렉트론가부시키가이샤 | 기판 지지 장치 및 기판 지지 방법 |
US8026179B2 (en) | 2009-04-09 | 2011-09-27 | Macronix International Co., Ltd. | Patterning method and integrated circuit structure |
US8272346B2 (en) | 2009-04-10 | 2012-09-25 | Lam Research Corporation | Gasket with positioning feature for clamped monolithic showerhead electrode |
US8193075B2 (en) | 2009-04-20 | 2012-06-05 | Applied Materials, Inc. | Remote hydrogen plasma with ion filter for terminating silicon dangling bonds |
WO2010123707A2 (en) | 2009-04-20 | 2010-10-28 | Applied Materials, Inc. | Enhanced scavenging of residual fluorine radicals using silicon coating on process chamber walls |
US9431237B2 (en) | 2009-04-20 | 2016-08-30 | Applied Materials, Inc. | Post treatment methods for oxide layers on semiconductor devices |
WO2010123877A2 (en) | 2009-04-21 | 2010-10-28 | Applied Materials, Inc. | Cvd apparatus for improved film thickness non-uniformity and particle performance |
US20100273291A1 (en) | 2009-04-28 | 2010-10-28 | Applied Materials, Inc. | Decontamination of mocvd chamber using nh3 purge after in-situ cleaning |
US8623141B2 (en) | 2009-05-18 | 2014-01-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Piping system and control for semiconductor processing |
WO2010141257A2 (en) | 2009-06-03 | 2010-12-09 | Applied Materials, Inc. | Method and apparatus for etching |
US8492292B2 (en) | 2009-06-29 | 2013-07-23 | Applied Materials, Inc. | Methods of forming oxide layers on substrates |
KR101659303B1 (ko) | 2009-07-15 | 2016-09-23 | 어플라이드 머티어리얼스, 인코포레이티드 | Cvd 챔버의 유동 제어 피쳐 |
US8124531B2 (en) | 2009-08-04 | 2012-02-28 | Novellus Systems, Inc. | Depositing tungsten into high aspect ratio features |
US7935643B2 (en) | 2009-08-06 | 2011-05-03 | Applied Materials, Inc. | Stress management for tensile films |
US8404598B2 (en) | 2009-08-07 | 2013-03-26 | Applied Materials, Inc. | Synchronized radio frequency pulsing for plasma etching |
US7989365B2 (en) | 2009-08-18 | 2011-08-02 | Applied Materials, Inc. | Remote plasma source seasoning |
KR101095119B1 (ko) | 2009-08-19 | 2011-12-16 | 삼성전기주식회사 | 다이 패키지 및 그 제조방법 |
CN102598130A (zh) | 2009-08-26 | 2012-07-18 | 威科仪器股份有限公司 | 用于在磁记录介质上制作图案的系统 |
WO2011031521A2 (en) | 2009-08-27 | 2011-03-17 | Applied Materials, Inc. | Method of decontamination of process chamber after in-situ chamber clean |
US8211808B2 (en) | 2009-08-31 | 2012-07-03 | Applied Materials, Inc. | Silicon-selective dry etch for carbon-containing films |
WO2011027515A1 (ja) | 2009-09-02 | 2011-03-10 | 積水化学工業株式会社 | シリコン含有膜のエッチング方法 |
US8997909B2 (en) | 2009-09-03 | 2015-04-07 | Game Changers, Llc | Air cushion transport |
WO2011028349A2 (en) | 2009-09-04 | 2011-03-10 | Applied Materials, Inc. | Remote hydrogen plasma source of silicon containing film deposition |
US20110073136A1 (en) | 2009-09-10 | 2011-03-31 | Matheson Tri-Gas, Inc. | Removal of gallium and gallium containing materials |
US20110065276A1 (en) | 2009-09-11 | 2011-03-17 | Applied Materials, Inc. | Apparatus and Methods for Cyclical Oxidation and Etching |
US20110061812A1 (en) | 2009-09-11 | 2011-03-17 | Applied Materials, Inc. | Apparatus and Methods for Cyclical Oxidation and Etching |
US20110061810A1 (en) | 2009-09-11 | 2011-03-17 | Applied Materials, Inc. | Apparatus and Methods for Cyclical Oxidation and Etching |
JP5648349B2 (ja) | 2009-09-17 | 2015-01-07 | 東京エレクトロン株式会社 | 成膜装置 |
US8216640B2 (en) | 2009-09-25 | 2012-07-10 | Hermes-Epitek Corporation | Method of making showerhead for semiconductor processing apparatus |
US8329587B2 (en) | 2009-10-05 | 2012-12-11 | Applied Materials, Inc. | Post-planarization densification |
US9449859B2 (en) | 2009-10-09 | 2016-09-20 | Applied Materials, Inc. | Multi-gas centrally cooled showerhead design |
US20110136347A1 (en) | 2009-10-21 | 2011-06-09 | Applied Materials, Inc. | Point-of-use silylamine generation |
EP2315028A1 (en) | 2009-10-26 | 2011-04-27 | Atlas Antibodies AB | PODXL protein in colorectal cancer |
JP5257328B2 (ja) | 2009-11-04 | 2013-08-07 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及び記憶媒体 |
KR20120104992A (ko) | 2009-11-06 | 2012-09-24 | 램버스 인코포레이티드 | 3-차원 메모리 어레이 적층 구조물 |
US8455364B2 (en) | 2009-11-06 | 2013-06-04 | International Business Machines Corporation | Sidewall image transfer using the lithographic stack as the mandrel |
US8771538B2 (en) | 2009-11-18 | 2014-07-08 | Applied Materials, Inc. | Plasma source design |
US8742665B2 (en) | 2009-11-18 | 2014-06-03 | Applied Materials, Inc. | Plasma source design |
WO2011066508A2 (en) | 2009-11-30 | 2011-06-03 | Applied Materials, Inc. | Chamber for processing hard disk drive substrates |
US8604697B2 (en) | 2009-12-09 | 2013-12-10 | Jehara Corporation | Apparatus for generating plasma |
TWI579916B (zh) | 2009-12-09 | 2017-04-21 | 諾菲勒斯系統公司 | 整合可流動氧化物及頂蓋氧化物之新穎間隙填充 |
US8202803B2 (en) | 2009-12-11 | 2012-06-19 | Tokyo Electron Limited | Method to remove capping layer of insulation dielectric in interconnect structures |
US20130023062A1 (en) | 2009-12-11 | 2013-01-24 | Takeshi Masuda | Thin film manufacturing apparatus, thin film manufacturing method and method for manufacturing semiconductor device |
US20110140229A1 (en) | 2009-12-16 | 2011-06-16 | Willy Rachmady | Techniques for forming shallow trench isolation |
US8274017B2 (en) | 2009-12-18 | 2012-09-25 | Applied Materials, Inc. | Multifunctional heater/chiller pedestal for wide range wafer temperature control |
US20110151677A1 (en) | 2009-12-21 | 2011-06-23 | Applied Materials, Inc. | Wet oxidation process performed on a dielectric material formed from a flowable cvd process |
US8501629B2 (en) | 2009-12-23 | 2013-08-06 | Applied Materials, Inc. | Smooth SiConi etch for silicon-containing films |
JP4927158B2 (ja) | 2009-12-25 | 2012-05-09 | 東京エレクトロン株式会社 | 基板処理方法、その基板処理方法を実行させるためのプログラムを記録した記録媒体及び基板処理装置 |
US8329262B2 (en) | 2010-01-05 | 2012-12-11 | Applied Materials, Inc. | Dielectric film formation using inert gas excitation |
JP5710209B2 (ja) | 2010-01-18 | 2015-04-30 | 東京エレクトロン株式会社 | 電磁波給電機構およびマイクロ波導入機構 |
JP5166458B2 (ja) | 2010-01-22 | 2013-03-21 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP5608384B2 (ja) | 2010-02-05 | 2014-10-15 | 東京エレクトロン株式会社 | 半導体装置の製造方法及びプラズマエッチング装置 |
ATE551439T1 (de) | 2010-02-08 | 2012-04-15 | Roth & Rau Ag | PARALLELER PLATTENREAKTOR ZUR GLEICHMÄßIGEN DÜNNFILMABLAGERUNG MIT REDUZIERTER WERKZEUGAUFSTELLFLÄCHE |
US20110198034A1 (en) | 2010-02-11 | 2011-08-18 | Jennifer Sun | Gas distribution showerhead with coating material for semiconductor processing |
US8361338B2 (en) | 2010-02-11 | 2013-01-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Hard mask removal method |
WO2011099650A1 (en) | 2010-02-15 | 2011-08-18 | Daikin Industries, Ltd. | Water and oil resistant agent for paper and paper treatment process |
JP5476152B2 (ja) | 2010-02-16 | 2014-04-23 | 積水化学工業株式会社 | 窒化シリコンのエッチング方法及び装置 |
US8456009B2 (en) | 2010-02-18 | 2013-06-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor structure having an air-gap region and a method of manufacturing the same |
JP5662079B2 (ja) | 2010-02-24 | 2015-01-28 | 東京エレクトロン株式会社 | エッチング処理方法 |
US20110207332A1 (en) | 2010-02-25 | 2011-08-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Thin film coated process kits for semiconductor manufacturing tools |
KR101853802B1 (ko) | 2010-03-05 | 2018-05-02 | 어플라이드 머티어리얼스, 인코포레이티드 | 라디칼성분 cvd에 의한 컨포멀 층들 |
JP5450187B2 (ja) | 2010-03-16 | 2014-03-26 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
US8772749B2 (en) | 2010-03-16 | 2014-07-08 | Sandisk 3D Llc | Bottom electrodes for use with metal oxide resistivity switching layers |
CN102892922A (zh) | 2010-03-17 | 2013-01-23 | 应用材料公司 | 用于远程等离子体源辅助的含硅膜沉积的方法和装置 |
US8435902B2 (en) | 2010-03-17 | 2013-05-07 | Applied Materials, Inc. | Invertable pattern loading with dry etch |
US20120074126A1 (en) | 2010-03-26 | 2012-03-29 | Applied Materials, Inc. | Wafer profile modification through hot/cold temperature zones on pedestal for semiconductor manufacturing equipment |
US8637411B2 (en) | 2010-04-15 | 2014-01-28 | Novellus Systems, Inc. | Plasma activated conformal dielectric film deposition |
US20110256421A1 (en) | 2010-04-16 | 2011-10-20 | United Technologies Corporation | Metallic coating for single crystal alloys |
US8288268B2 (en) | 2010-04-29 | 2012-10-16 | International Business Machines Corporation | Microelectronic structure including air gap |
US20110265951A1 (en) | 2010-04-30 | 2011-11-03 | Applied Materials, Inc. | Twin chamber processing system |
US8475674B2 (en) | 2010-04-30 | 2013-07-02 | Applied Materials, Inc. | High-temperature selective dry etch having reduced post-etch solid residue |
US20110265884A1 (en) | 2010-04-30 | 2011-11-03 | Applied Materials, Inc. | Twin chamber processing system with shared vacuum pump |
US8496756B2 (en) | 2010-04-30 | 2013-07-30 | Applied Materials, Inc. | Methods for processing substrates in process systems having shared resources |
US8361906B2 (en) | 2010-05-20 | 2013-01-29 | Applied Materials, Inc. | Ultra high selectivity ashable hard mask film |
US20140154668A1 (en) | 2010-05-21 | 2014-06-05 | The Trustees Of Princeton University | Structures for Enhancement of Local Electric Field, Light Absorption, Light Radiation, Material Detection and Methods for Making and Using of the Same. |
US9324576B2 (en) | 2010-05-27 | 2016-04-26 | Applied Materials, Inc. | Selective etch for silicon films |
JP5751895B2 (ja) | 2010-06-08 | 2015-07-22 | 株式会社日立国際電気 | 半導体装置の製造方法、クリーニング方法および基板処理装置 |
US8373239B2 (en) | 2010-06-08 | 2013-02-12 | International Business Machines Corporation | Structure and method for replacement gate MOSFET with self-aligned contact using sacrificial mandrel dielectric |
JP2011258768A (ja) | 2010-06-09 | 2011-12-22 | Sumitomo Electric Ind Ltd | 炭化珪素基板、エピタキシャル層付き基板、半導体装置および炭化珪素基板の製造方法 |
US20110304078A1 (en) | 2010-06-14 | 2011-12-15 | Applied Materials, Inc. | Methods for removing byproducts from load lock chambers |
US8524004B2 (en) | 2010-06-16 | 2013-09-03 | Applied Materials, Inc. | Loadlock batch ozone cure |
JP5463224B2 (ja) | 2010-07-09 | 2014-04-09 | 日本発條株式会社 | 流路付きプレートの製造方法、流路付きプレート、温度調節プレート、コールドプレート、及びシャワープレート |
US20120009796A1 (en) | 2010-07-09 | 2012-01-12 | Applied Materials, Inc. | Post-ash sidewall healing |
US8278203B2 (en) | 2010-07-28 | 2012-10-02 | Sandisk Technologies Inc. | Metal control gate formation in non-volatile storage |
US8869742B2 (en) | 2010-08-04 | 2014-10-28 | Lam Research Corporation | Plasma processing chamber with dual axial gas injection and exhaust |
JP5198611B2 (ja) | 2010-08-12 | 2013-05-15 | 株式会社東芝 | ガス供給部材、プラズマ処理装置およびイットリア含有膜の形成方法 |
TW201213594A (en) | 2010-08-16 | 2012-04-01 | Air Liquide | Etching of oxide materials |
KR20120022251A (ko) | 2010-09-01 | 2012-03-12 | 삼성전자주식회사 | 플라즈마 식각방법 및 그의 장치 |
US8573152B2 (en) | 2010-09-03 | 2013-11-05 | Lam Research Corporation | Showerhead electrode |
US8580699B2 (en) | 2010-09-10 | 2013-11-12 | Applied Materials, Inc. | Embedded catalyst for atomic layer deposition of silicon oxide |
KR20120029291A (ko) | 2010-09-16 | 2012-03-26 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
US8840754B2 (en) | 2010-09-17 | 2014-09-23 | Lam Research Corporation | Polar regions for electrostatic de-chucking with lift pins |
US8993434B2 (en) | 2010-09-21 | 2015-03-31 | Applied Materials, Inc. | Methods for forming layers on a substrate |
US8633423B2 (en) | 2010-10-14 | 2014-01-21 | Applied Materials, Inc. | Methods and apparatus for controlling substrate temperature in a process chamber |
KR101209003B1 (ko) | 2010-10-14 | 2012-12-06 | 주식회사 유진테크 | 3차원 구조의 메모리 소자를 제조하는 방법 및 장치 |
US20120097330A1 (en) | 2010-10-20 | 2012-04-26 | Applied Materials, Inc. | Dual delivery chamber design |
JP5544343B2 (ja) | 2010-10-29 | 2014-07-09 | 東京エレクトロン株式会社 | 成膜装置 |
WO2012058377A2 (en) | 2010-10-29 | 2012-05-03 | Applied Materials, Inc. | Methods for etching oxide layers using process gas pulsing |
US9111994B2 (en) | 2010-11-01 | 2015-08-18 | Magnachip Semiconductor, Ltd. | Semiconductor device and method of fabricating the same |
US8133349B1 (en) | 2010-11-03 | 2012-03-13 | Lam Research Corporation | Rapid and uniform gas switching for a plasma etch process |
US8389416B2 (en) | 2010-11-22 | 2013-03-05 | Tokyo Electron Limited | Process for etching silicon with selectivity to silicon-germanium |
KR20120058962A (ko) | 2010-11-30 | 2012-06-08 | 삼성전자주식회사 | 반도체 장치의 제조 방법 |
US8475103B2 (en) | 2010-12-09 | 2013-07-02 | Hamilton Sundstand Corporation | Sealing washer assembly for large diameter holes on flat surfaces |
US8470713B2 (en) | 2010-12-13 | 2013-06-25 | International Business Machines Corporation | Nitride etch for improved spacer uniformity |
US8741778B2 (en) | 2010-12-14 | 2014-06-03 | Applied Materials, Inc. | Uniform dry etch in two stages |
US9719169B2 (en) | 2010-12-20 | 2017-08-01 | Novellus Systems, Inc. | System and apparatus for flowable deposition in semiconductor fabrication |
JP5728221B2 (ja) | 2010-12-24 | 2015-06-03 | 東京エレクトロン株式会社 | 基板処理方法及び記憶媒体 |
US20120177846A1 (en) | 2011-01-07 | 2012-07-12 | Applied Materials, Inc. | Radical steam cvd |
KR101529578B1 (ko) | 2011-01-14 | 2015-06-19 | 성균관대학교산학협력단 | 플라즈마 기판 처리 장치 및 방법 |
US20120180954A1 (en) | 2011-01-18 | 2012-07-19 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
US9018692B2 (en) | 2011-01-19 | 2015-04-28 | Macronix International Co., Ltd. | Low cost scalable 3D memory |
US8363476B2 (en) | 2011-01-19 | 2013-01-29 | Macronix International Co., Ltd. | Memory device, manufacturing method and operating method of the same |
KR101744372B1 (ko) | 2011-01-20 | 2017-06-07 | 도쿄엘렉트론가부시키가이샤 | 진공 처리 장치 |
US8723423B2 (en) | 2011-01-25 | 2014-05-13 | Advanced Energy Industries, Inc. | Electrostatic remote plasma source |
US9068265B2 (en) | 2011-02-01 | 2015-06-30 | Applied Materials, Inc. | Gas distribution plate with discrete protective elements |
KR101732936B1 (ko) | 2011-02-14 | 2017-05-08 | 삼성전자주식회사 | 반도체 소자의 미세 패턴 형성 방법 |
US8771539B2 (en) | 2011-02-22 | 2014-07-08 | Applied Materials, Inc. | Remotely-excited fluorine and water vapor etch |
WO2012118847A2 (en) | 2011-02-28 | 2012-09-07 | Inpria Corportion | Solution processible hardmarks for high resolusion lithography |
TW201246362A (en) | 2011-03-01 | 2012-11-16 | Univ King Abdullah Sci & Tech | Silicon germanium mask for deep silicon etching |
WO2012118897A2 (en) | 2011-03-01 | 2012-09-07 | Applied Materials, Inc. | Abatement and strip process chamber in a dual loadlock configuration |
JP6054314B2 (ja) | 2011-03-01 | 2016-12-27 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 基板搬送及びラジカル閉じ込めのための方法及び装置 |
SG192967A1 (en) | 2011-03-04 | 2013-09-30 | Novellus Systems Inc | Hybrid ceramic showerhead |
FR2972563B1 (fr) | 2011-03-07 | 2013-03-01 | Altis Semiconductor Snc | Procédé de traitement d'une couche de nitrure de métal oxydée |
US8999856B2 (en) | 2011-03-14 | 2015-04-07 | Applied Materials, Inc. | Methods for etch of sin films |
US9064815B2 (en) | 2011-03-14 | 2015-06-23 | Applied Materials, Inc. | Methods for etch of metal and metal-oxide films |
US20120238108A1 (en) | 2011-03-14 | 2012-09-20 | Applied Materials, Inc. | Two-stage ozone cure for dielectric films |
CN103430285B (zh) | 2011-03-22 | 2016-06-01 | 应用材料公司 | 用于化学气相沉积腔室的衬里组件 |
CN103443914B (zh) | 2011-03-23 | 2016-05-04 | 住友大阪水泥股份有限公司 | 静电卡盘装置 |
US8980418B2 (en) | 2011-03-24 | 2015-03-17 | Uchicago Argonne, Llc | Sequential infiltration synthesis for advanced lithography |
JP5815967B2 (ja) | 2011-03-31 | 2015-11-17 | 東京エレクトロン株式会社 | 基板洗浄装置及び真空処理システム |
JP6003011B2 (ja) | 2011-03-31 | 2016-10-05 | 東京エレクトロン株式会社 | 基板処理装置 |
JP5864879B2 (ja) | 2011-03-31 | 2016-02-17 | 東京エレクトロン株式会社 | 基板処理装置及びその制御方法 |
US9196463B2 (en) | 2011-04-07 | 2015-11-24 | Varian Semiconductor Equipment Associates, Inc. | System and method for plasma monitoring using microwaves |
US8460569B2 (en) | 2011-04-07 | 2013-06-11 | Varian Semiconductor Equipment Associates, Inc. | Method and system for post-etch treatment of patterned substrate features |
US8815720B2 (en) | 2011-04-12 | 2014-08-26 | Varian Semiconductor Equipment Associates, Inc. | Method of etching a workpiece |
US9695510B2 (en) | 2011-04-21 | 2017-07-04 | Kurt J. Lesker Company | Atomic layer deposition apparatus and process |
US8415250B2 (en) | 2011-04-29 | 2013-04-09 | International Business Machines Corporation | Method of forming silicide contacts of different shapes selectively on regions of a semiconductor device |
US8298954B1 (en) | 2011-05-06 | 2012-10-30 | International Business Machines Corporation | Sidewall image transfer process employing a cap material layer for a metal nitride layer |
US20120285621A1 (en) | 2011-05-10 | 2012-11-15 | Applied Materials, Inc. | Semiconductor chamber apparatus for dielectric processing |
US9012283B2 (en) | 2011-05-16 | 2015-04-21 | International Business Machines Corporation | Integrated circuit (IC) chip having both metal and silicon gate field effect transistors (FETs) and method of manufacture |
US8663389B2 (en) | 2011-05-21 | 2014-03-04 | Andrew Peter Clarke | Method and apparatus for crystal growth using a membrane-assisted semi-closed reactor |
JP5563522B2 (ja) | 2011-05-23 | 2014-07-30 | 東京エレクトロン株式会社 | プラズマ処理装置 |
KR101390900B1 (ko) | 2011-05-31 | 2014-04-30 | 세메스 주식회사 | 기판처리장치 |
US8562785B2 (en) | 2011-05-31 | 2013-10-22 | Lam Research Corporation | Gas distribution showerhead for inductively coupled plasma etch reactor |
US8466073B2 (en) | 2011-06-03 | 2013-06-18 | Applied Materials, Inc. | Capping layer for reduced outgassing |
CN103766002B (zh) | 2011-06-09 | 2017-03-22 | 韩国基础科学支援硏究所 | 包括带状磁铁的等离子产生源及利用此的薄膜沉积系统 |
US8637372B2 (en) | 2011-06-29 | 2014-01-28 | GlobalFoundries, Inc. | Methods for fabricating a FINFET integrated circuit on a bulk silicon substrate |
US8883637B2 (en) | 2011-06-30 | 2014-11-11 | Novellus Systems, Inc. | Systems and methods for controlling etch selectivity of various materials |
US9117867B2 (en) | 2011-07-01 | 2015-08-25 | Applied Materials, Inc. | Electrostatic chuck assembly |
US9054048B2 (en) | 2011-07-05 | 2015-06-09 | Applied Materials, Inc. | NH3 containing plasma nitridation of a layer on a substrate |
KR20110086540A (ko) | 2011-07-12 | 2011-07-28 | 조인숙 | 불소화합물을 이용한 필름의 선택적인 식각 방법 |
US8741775B2 (en) | 2011-07-20 | 2014-06-03 | Applied Materials, Inc. | Method of patterning a low-K dielectric film |
US8974601B2 (en) | 2011-07-29 | 2015-03-10 | Semes Co., Ltd. | Apparatuses, systems and methods for treating substrate |
US8771536B2 (en) | 2011-08-01 | 2014-07-08 | Applied Materials, Inc. | Dry-etch for silicon-and-carbon-containing films |
US20130034666A1 (en) | 2011-08-01 | 2013-02-07 | Applied Materials, Inc. | Inductive plasma sources for wafer processing and chamber cleaning |
KR101271247B1 (ko) | 2011-08-02 | 2013-06-07 | 주식회사 유진테크 | 에피택셜 공정을 위한 반도체 제조설비 |
CN102915902B (zh) | 2011-08-02 | 2015-11-25 | 中微半导体设备(上海)有限公司 | 一种电容耦合式的等离子体处理装置及其基片加工方法 |
US9117759B2 (en) | 2011-08-10 | 2015-08-25 | Micron Technology, Inc. | Methods of forming bulb-shaped trenches in silicon |
US20130045605A1 (en) | 2011-08-18 | 2013-02-21 | Applied Materials, Inc. | Dry-etch for silicon-and-nitrogen-containing films |
US8735291B2 (en) | 2011-08-25 | 2014-05-27 | Tokyo Electron Limited | Method for etching high-k dielectric using pulsed bias power |
US8679982B2 (en) | 2011-08-26 | 2014-03-25 | Applied Materials, Inc. | Selective suppression of dry-etch rate of materials containing both silicon and oxygen |
US8679983B2 (en) | 2011-09-01 | 2014-03-25 | Applied Materials, Inc. | Selective suppression of dry-etch rate of materials containing both silicon and nitrogen |
US20130217243A1 (en) | 2011-09-09 | 2013-08-22 | Applied Materials, Inc. | Doping of dielectric layers |
US8808562B2 (en) | 2011-09-12 | 2014-08-19 | Tokyo Electron Limited | Dry metal etching method |
US8927390B2 (en) | 2011-09-26 | 2015-01-06 | Applied Materials, Inc. | Intrench profile |
US20130260564A1 (en) | 2011-09-26 | 2013-10-03 | Applied Materials, Inc. | Insensitive dry removal process for semiconductor integration |
US8664012B2 (en) | 2011-09-30 | 2014-03-04 | Tokyo Electron Limited | Combined silicon oxide etch and contamination removal process |
US8551891B2 (en) | 2011-10-04 | 2013-10-08 | Applied Materials, Inc. | Remote plasma burn-in |
US9653267B2 (en) | 2011-10-06 | 2017-05-16 | Applied Materials, Inc. | Temperature controlled chamber liner |
US8808563B2 (en) | 2011-10-07 | 2014-08-19 | Applied Materials, Inc. | Selective etch of silicon by way of metastable hydrogen termination |
US20130087309A1 (en) | 2011-10-11 | 2013-04-11 | Applied Materials, Inc. | Substrate support with temperature control |
JP5740281B2 (ja) | 2011-10-20 | 2015-06-24 | 東京エレクトロン株式会社 | 金属膜のドライエッチング方法 |
US9666414B2 (en) | 2011-10-27 | 2017-05-30 | Applied Materials, Inc. | Process chamber for etching low k and other dielectric films |
US9947559B2 (en) | 2011-10-28 | 2018-04-17 | Applied Materials, Inc. | Thermal management of edge ring in semiconductor processing |
US20130105085A1 (en) | 2011-10-28 | 2013-05-02 | Applied Materials, Inc. | Plasma reactor with chamber wall temperature control |
US20130107415A1 (en) | 2011-10-28 | 2013-05-02 | Applied Materials, Inc. | Electrostatic chuck |
US9017481B1 (en) | 2011-10-28 | 2015-04-28 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
US10271416B2 (en) | 2011-10-28 | 2019-04-23 | Applied Materials, Inc. | High efficiency triple-coil inductively coupled plasma source with phase control |
US20130115372A1 (en) | 2011-11-08 | 2013-05-09 | Primestar Solar, Inc. | High emissivity distribution plate in vapor deposition apparatus and processes |
JP5779482B2 (ja) | 2011-11-15 | 2015-09-16 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
WO2013074354A1 (en) * | 2011-11-17 | 2013-05-23 | Lam Research Corporation | Distributed multi-zone plasma source systems, methods and apparatus |
US8652298B2 (en) | 2011-11-21 | 2014-02-18 | Lam Research Corporation | Triode reactor design with multiple radiofrequency powers |
US8900364B2 (en) | 2011-11-29 | 2014-12-02 | Intermolecular, Inc. | High productivity vapor processing system |
US8440523B1 (en) | 2011-12-07 | 2013-05-14 | International Business Machines Corporation | Micromechanical device and methods to fabricate same using hard mask resistant to structure release etch |
US8988848B2 (en) | 2011-12-15 | 2015-03-24 | Applied Materials, Inc. | Extended and independent RF powered cathode substrate for extreme edge tunability |
KR20130072911A (ko) | 2011-12-22 | 2013-07-02 | 에스케이하이닉스 주식회사 | 비휘발성 메모리 장치 및 그 제조 방법 |
KR101878311B1 (ko) | 2011-12-30 | 2018-07-17 | 삼성전자주식회사 | high-K막을 스페이서 에치 스톱으로 이용하는 반도체 소자 형성 방법 및 관련된 소자 |
US8603891B2 (en) | 2012-01-20 | 2013-12-10 | Micron Technology, Inc. | Methods for forming vertical memory devices and apparatuses |
JP6010406B2 (ja) | 2012-01-27 | 2016-10-19 | 東京エレクトロン株式会社 | マイクロ波放射機構、マイクロ波プラズマ源および表面波プラズマ処理装置 |
US8747686B2 (en) | 2012-01-27 | 2014-06-10 | Applied Materials, Inc. | Methods of end point detection for substrate fabrication processes |
US9416445B2 (en) | 2012-02-08 | 2016-08-16 | Iwatani Corporation | Method for treating inner surface of chlorine trifluoride supply passage in apparatus using chlorine trifluoride |
US20130175654A1 (en) | 2012-02-10 | 2013-07-11 | Sylvain Muckenhirn | Bulk nanohole structures for thermoelectric devices and methods for making the same |
US9212099B2 (en) | 2012-02-22 | 2015-12-15 | Applied Materials, Inc. | Heat treated ceramic substrate having ceramic coating and heat treatment for coated ceramics |
WO2013148880A1 (en) | 2012-03-27 | 2013-10-03 | Novellus Systems, Inc. | Tungsten feature fill |
US20130273313A1 (en) | 2012-04-13 | 2013-10-17 | Applied Materials, Inc. | Ceramic coated ring and process for applying ceramic coating |
US9090046B2 (en) | 2012-04-16 | 2015-07-28 | Applied Materials, Inc. | Ceramic coated article and process for applying ceramic coating |
US8937800B2 (en) | 2012-04-24 | 2015-01-20 | Applied Materials, Inc. | Electrostatic chuck with advanced RF and temperature uniformity |
JP6180510B2 (ja) | 2012-04-26 | 2017-08-16 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Escの接着剤の浸食を防止するための方法及び装置 |
US20130284369A1 (en) | 2012-04-26 | 2013-10-31 | Applied Materials, Inc. | Two-phase operation of plasma chamber by phase locked loop |
US9161428B2 (en) | 2012-04-26 | 2015-10-13 | Applied Materials, Inc. | Independent control of RF phases of separate coils of an inductively coupled plasma reactor |
US9948214B2 (en) | 2012-04-26 | 2018-04-17 | Applied Materials, Inc. | High temperature electrostatic chuck with real-time heat zone regulating capability |
US9394615B2 (en) | 2012-04-27 | 2016-07-19 | Applied Materials, Inc. | Plasma resistant ceramic coated conductive article |
US9976215B2 (en) | 2012-05-01 | 2018-05-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor film formation apparatus and process |
JP2013235912A (ja) | 2012-05-08 | 2013-11-21 | Tokyo Electron Ltd | 被処理基体をエッチングする方法、及びプラズマエッチング装置 |
US20130298942A1 (en) | 2012-05-14 | 2013-11-14 | Applied Materials, Inc. | Etch remnant removal |
FR2991320B1 (fr) | 2012-06-05 | 2014-06-27 | Commissariat Energie Atomique | Procede de preparation d'amines methylees |
US8974164B2 (en) | 2012-06-26 | 2015-03-10 | Newfrey Llc | Plastic high heat fastener |
US8916477B2 (en) | 2012-07-02 | 2014-12-23 | Novellus Systems, Inc. | Polysilicon etch with high selectivity |
US9034773B2 (en) | 2012-07-02 | 2015-05-19 | Novellus Systems, Inc. | Removal of native oxide with high selectivity |
US8802572B2 (en) | 2012-07-10 | 2014-08-12 | Applied Materials, Inc. | Method of patterning a low-k dielectric film |
US9267739B2 (en) | 2012-07-18 | 2016-02-23 | Applied Materials, Inc. | Pedestal with multi-zone temperature control and multiple purge capabilities |
US9184030B2 (en) | 2012-07-19 | 2015-11-10 | Lam Research Corporation | Edge exclusion control with adjustable plasma exclusion zone ring |
US9631273B2 (en) | 2012-07-25 | 2017-04-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus for dielectric deposition process |
US9604249B2 (en) | 2012-07-26 | 2017-03-28 | Applied Materials, Inc. | Innovative top-coat approach for advanced device on-wafer particle performance |
US9343289B2 (en) | 2012-07-27 | 2016-05-17 | Applied Materials, Inc. | Chemistry compatible coating material for advanced device on-wafer particle performance |
US9373517B2 (en) | 2012-08-02 | 2016-06-21 | Applied Materials, Inc. | Semiconductor processing with DC assisted RF power for improved control |
US8772888B2 (en) | 2012-08-10 | 2014-07-08 | Avalanche Technology Inc. | MTJ MRAM with stud patterning |
US8747680B1 (en) | 2012-08-14 | 2014-06-10 | Everspin Technologies, Inc. | Method of manufacturing a magnetoresistive-based device |
KR102133373B1 (ko) | 2012-08-23 | 2020-07-13 | 어플라이드 머티어리얼스, 인코포레이티드 | Uv 챔버들을 세정하기 위한 방법 및 하드웨어 |
WO2014035933A1 (en) | 2012-08-28 | 2014-03-06 | Applied Materials, Inc. | Methods and apparatus for forming tantalum silicate layers on germanium or iii-v semiconductor devices |
US20140062285A1 (en) | 2012-08-29 | 2014-03-06 | Mks Instruments, Inc. | Method and Apparatus for a Large Area Inductive Plasma Source |
JP6027374B2 (ja) | 2012-09-12 | 2016-11-16 | 東京エレクトロン株式会社 | プラズマ処理装置及びフィルタユニット |
US9034770B2 (en) | 2012-09-17 | 2015-05-19 | Applied Materials, Inc. | Differential silicon oxide etch |
US9023734B2 (en) | 2012-09-18 | 2015-05-05 | Applied Materials, Inc. | Radical-component oxide etch |
US9390937B2 (en) | 2012-09-20 | 2016-07-12 | Applied Materials, Inc. | Silicon-carbon-nitride selective etch |
US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
US20140099794A1 (en) | 2012-09-21 | 2014-04-10 | Applied Materials, Inc. | Radical chemistry modulation and control using multiple flow pathways |
US9018022B2 (en) | 2012-09-24 | 2015-04-28 | Lam Research Corporation | Showerhead electrode assembly in a capacitively coupled plasma processing apparatus |
TWI604528B (zh) | 2012-10-02 | 2017-11-01 | 應用材料股份有限公司 | 使用電漿預處理與高溫蝕刻劑沉積的方向性二氧化矽蝕刻 |
TWI591712B (zh) | 2012-10-03 | 2017-07-11 | 應用材料股份有限公司 | 使用低溫蝕刻劑沉積與電漿後處理的方向性二氧化矽蝕刻 |
US9165783B2 (en) | 2012-11-01 | 2015-10-20 | Applied Materials, Inc. | Method of patterning a low-k dielectric film |
JP6035117B2 (ja) | 2012-11-09 | 2016-11-30 | 東京エレクトロン株式会社 | プラズマエッチング方法及びプラズマエッチング装置 |
US8765574B2 (en) | 2012-11-09 | 2014-07-01 | Applied Materials, Inc. | Dry etch process |
US8969212B2 (en) | 2012-11-20 | 2015-03-03 | Applied Materials, Inc. | Dry-etch selectivity |
US8980763B2 (en) | 2012-11-30 | 2015-03-17 | Applied Materials, Inc. | Dry-etch for selective tungsten removal |
US9064816B2 (en) | 2012-11-30 | 2015-06-23 | Applied Materials, Inc. | Dry-etch for selective oxidation removal |
US9777564B2 (en) | 2012-12-03 | 2017-10-03 | Pyrophase, Inc. | Stimulating production from oil wells using an RF dipole antenna |
US9982343B2 (en) | 2012-12-14 | 2018-05-29 | Applied Materials, Inc. | Apparatus for providing plasma to a process chamber |
WO2014092856A1 (en) | 2012-12-14 | 2014-06-19 | The Penn State Research Foundation | Ultra-high speed anisotropic reactive ion etching |
US9111877B2 (en) | 2012-12-18 | 2015-08-18 | Applied Materials, Inc. | Non-local plasma oxide etch |
US8921234B2 (en) | 2012-12-21 | 2014-12-30 | Applied Materials, Inc. | Selective titanium nitride etching |
US8941969B2 (en) | 2012-12-21 | 2015-01-27 | Applied Materials, Inc. | Single-body electrostatic chuck |
JP6328931B2 (ja) | 2012-12-31 | 2018-05-23 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | フォトレジストパターントリミング方法 |
US9165823B2 (en) | 2013-01-08 | 2015-10-20 | Macronix International Co., Ltd. | 3D stacking semiconductor device and manufacturing method thereof |
US9093389B2 (en) | 2013-01-16 | 2015-07-28 | Applied Materials, Inc. | Method of patterning a silicon nitride dielectric film |
WO2014116392A1 (en) | 2013-01-25 | 2014-07-31 | Applied Materials, Inc. | Electrostatic chuck with concentric cooling base |
JP6080571B2 (ja) | 2013-01-31 | 2017-02-15 | 東京エレクトロン株式会社 | 載置台及びプラズマ処理装置 |
US8970114B2 (en) | 2013-02-01 | 2015-03-03 | Lam Research Corporation | Temperature controlled window of a plasma processing chamber component |
US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
JP2014154421A (ja) | 2013-02-12 | 2014-08-25 | Tokyo Electron Ltd | プラズマ処理装置、プラズマ処理方法、および高周波発生器 |
US20140234466A1 (en) | 2013-02-21 | 2014-08-21 | HGST Netherlands B.V. | Imprint mold and method for making using sidewall spacer line doubling |
TWI487004B (zh) | 2013-03-01 | 2015-06-01 | Winbond Electronics Corp | 圖案化的方法及記憶體元件的形成方法 |
US9362130B2 (en) | 2013-03-01 | 2016-06-07 | Applied Materials, Inc. | Enhanced etching processes using remote plasma sources |
US9040422B2 (en) | 2013-03-05 | 2015-05-26 | Applied Materials, Inc. | Selective titanium nitride removal |
US8801952B1 (en) | 2013-03-07 | 2014-08-12 | Applied Materials, Inc. | Conformal oxide dry etch |
US10170282B2 (en) | 2013-03-08 | 2019-01-01 | Applied Materials, Inc. | Insulated semiconductor faceplate designs |
US8859433B2 (en) | 2013-03-11 | 2014-10-14 | International Business Machines Corporation | DSA grapho-epitaxy process with etch stop material |
US8946023B2 (en) | 2013-03-12 | 2015-02-03 | Sandisk Technologies Inc. | Method of making a vertical NAND device using sequential etching of multilayer stacks |
US20140262031A1 (en) | 2013-03-12 | 2014-09-18 | Sergey G. BELOSTOTSKIY | Multi-mode etch chamber source assembly |
TWI625424B (zh) | 2013-03-13 | 2018-06-01 | 應用材料股份有限公司 | 蝕刻包含過渡金屬的膜之方法 |
US20140273451A1 (en) | 2013-03-13 | 2014-09-18 | Applied Materials, Inc. | Tungsten deposition sequence |
WO2014159427A1 (en) | 2013-03-14 | 2014-10-02 | Applied Materials, Inc | Resist hardening and development processes for semiconductor device manufacturing |
US9006106B2 (en) | 2013-03-14 | 2015-04-14 | Applied Materials, Inc. | Method of removing a metal hardmask |
US9556507B2 (en) | 2013-03-14 | 2017-01-31 | Applied Materials, Inc. | Yttria-based material coated chemical vapor deposition chamber heater |
US8946076B2 (en) | 2013-03-15 | 2015-02-03 | Micron Technology, Inc. | Methods of fabricating integrated structures, and methods of forming vertically-stacked memory cells |
US20140271097A1 (en) | 2013-03-15 | 2014-09-18 | Applied Materials, Inc. | Processing systems and methods for halide scavenging |
US9276011B2 (en) | 2013-03-15 | 2016-03-01 | Micron Technology, Inc. | Cell pillar structures and integrated flows |
US20140263173A1 (en) | 2013-03-15 | 2014-09-18 | Applied Materials, Inc. | Methods for improving etching resistance for an amorphous carbon film |
US20140288528A1 (en) | 2013-03-15 | 2014-09-25 | Dr. Py Institute, Llc | Single-use needle assembly and method |
JP5386046B1 (ja) | 2013-03-27 | 2014-01-15 | エピクルー株式会社 | サセプタ支持部およびこのサセプタ支持部を備えるエピタキシャル成長装置 |
US10941501B2 (en) | 2013-03-29 | 2021-03-09 | Analytical Specialties, Inc. | Method and composition for metal finishing |
US9230819B2 (en) | 2013-04-05 | 2016-01-05 | Lam Research Corporation | Internal plasma grid applications for semiconductor fabrication in context of ion-ion plasma processing |
US9245761B2 (en) | 2013-04-05 | 2016-01-26 | Lam Research Corporation | Internal plasma grid for semiconductor fabrication |
US20140308758A1 (en) | 2013-04-10 | 2014-10-16 | Applied Materials, Inc. | Patterning magnetic memory |
US8748322B1 (en) | 2013-04-16 | 2014-06-10 | Applied Materials, Inc. | Silicon oxide recess etch |
US20140311581A1 (en) | 2013-04-19 | 2014-10-23 | Applied Materials, Inc. | Pressure controller configuration for semiconductor processing applications |
US9720022B2 (en) | 2015-05-19 | 2017-08-01 | Lam Research Corporation | Systems and methods for providing characteristics of an impedance matching model for use with matching networks |
US20140342569A1 (en) | 2013-05-16 | 2014-11-20 | Applied Materials, Inc. | Near surface etch selectivity enhancement |
US8895449B1 (en) | 2013-05-16 | 2014-11-25 | Applied Materials, Inc. | Delicate dry clean |
US9114438B2 (en) | 2013-05-21 | 2015-08-25 | Applied Materials, Inc. | Copper residue chamber clean |
US9082826B2 (en) | 2013-05-24 | 2015-07-14 | Lam Research Corporation | Methods and apparatuses for void-free tungsten fill in three-dimensional semiconductor features |
JP6002087B2 (ja) | 2013-05-29 | 2016-10-05 | 東京エレクトロン株式会社 | グラフェンの生成方法 |
US20140357083A1 (en) | 2013-05-31 | 2014-12-04 | Applied Materials, Inc. | Directed block copolymer self-assembly patterns for advanced photolithography applications |
US10010912B2 (en) | 2013-06-14 | 2018-07-03 | Applied Materials, Inc. | Particle reduction via throttle gate valve purge |
US10808317B2 (en) | 2013-07-03 | 2020-10-20 | Lam Research Corporation | Deposition apparatus including an isothermal processing zone |
US8871651B1 (en) | 2013-07-12 | 2014-10-28 | Globalfoundries Inc. | Mask formation processing |
US9493879B2 (en) | 2013-07-12 | 2016-11-15 | Applied Materials, Inc. | Selective sputtering for pattern transfer |
US8932947B1 (en) | 2013-07-23 | 2015-01-13 | Applied Materials, Inc. | Methods for forming a round bottom silicon trench recess for semiconductor applications |
US9362163B2 (en) | 2013-07-30 | 2016-06-07 | Lam Research Corporation | Methods and apparatuses for atomic layer cleaning of contacts and vias |
KR102154112B1 (ko) | 2013-08-01 | 2020-09-09 | 삼성전자주식회사 | 금속 배선들을 포함하는 반도체 장치 및 그 제조 방법 |
US20150050812A1 (en) | 2013-08-13 | 2015-02-19 | Globalfoundries Inc. | Wafer-less auto clean of processing chamber |
US9543163B2 (en) | 2013-08-20 | 2017-01-10 | Applied Materials, Inc. | Methods for forming features in a material layer utilizing a combination of a main etching and a cyclical etching process |
WO2015031163A1 (en) | 2013-08-27 | 2015-03-05 | Tokyo Electron Limited | Method for laterally trimming a hardmask |
US9773648B2 (en) | 2013-08-30 | 2017-09-26 | Applied Materials, Inc. | Dual discharge modes operation for remote plasma |
JP5837012B2 (ja) | 2013-09-12 | 2015-12-24 | ラピスセミコンダクタ株式会社 | モニタリング方法、プラズマモニタリング方法、モニタリングシステム及びプラズマモニタリングシステム |
US9230980B2 (en) | 2013-09-15 | 2016-01-05 | Sandisk Technologies Inc. | Single-semiconductor-layer channel in a memory opening for a three-dimensional non-volatile memory device |
US8956980B1 (en) | 2013-09-16 | 2015-02-17 | Applied Materials, Inc. | Selective etch of silicon nitride |
US9051655B2 (en) | 2013-09-16 | 2015-06-09 | Applied Materials, Inc. | Boron ionization for aluminum oxide etch enhancement |
US8980758B1 (en) | 2013-09-17 | 2015-03-17 | Applied Materials, Inc. | Methods for etching an etching stop layer utilizing a cyclical etching process |
CN110066984B (zh) | 2013-09-27 | 2021-06-08 | 应用材料公司 | 实现无缝钴间隙填充的方法 |
US8951429B1 (en) | 2013-10-29 | 2015-02-10 | Applied Materials, Inc. | Tungsten oxide processing |
US9576809B2 (en) | 2013-11-04 | 2017-02-21 | Applied Materials, Inc. | Etch suppression with germanium |
US9236265B2 (en) | 2013-11-04 | 2016-01-12 | Applied Materials, Inc. | Silicon germanium processing |
WO2015069613A1 (en) | 2013-11-06 | 2015-05-14 | Mattson Technology, Inc. | Novel mask removal process strategy for vertical nand device |
US9520303B2 (en) | 2013-11-12 | 2016-12-13 | Applied Materials, Inc. | Aluminum selective etch |
US9330937B2 (en) | 2013-11-13 | 2016-05-03 | Intermolecular, Inc. | Etching of semiconductor structures that include titanium-based layers |
US9245762B2 (en) | 2013-12-02 | 2016-01-26 | Applied Materials, Inc. | Procedure for etch rate consistency |
US9117855B2 (en) | 2013-12-04 | 2015-08-25 | Applied Materials, Inc. | Polarity control for remote plasma |
US20150170926A1 (en) | 2013-12-16 | 2015-06-18 | David J. Michalak | Dielectric layers having ordered elongate pores |
US9263278B2 (en) | 2013-12-17 | 2016-02-16 | Applied Materials, Inc. | Dopant etch selectivity control |
US20150171008A1 (en) | 2013-12-17 | 2015-06-18 | GLOBAL FOUNDRIES Singapore Ptd. Ltd. | Integrated circuits with dummy contacts and methods for producing such integrated circuits |
US20150170879A1 (en) | 2013-12-17 | 2015-06-18 | Applied Materials, Inc. | Semiconductor system assemblies and methods of operation |
US20150170943A1 (en) | 2013-12-17 | 2015-06-18 | Applied Materials, Inc. | Semiconductor system assemblies and methods of operation |
US9287095B2 (en) | 2013-12-17 | 2016-03-15 | Applied Materials, Inc. | Semiconductor system assemblies and methods of operation |
US9190293B2 (en) | 2013-12-18 | 2015-11-17 | Applied Materials, Inc. | Even tungsten etch for high aspect ratio trenches |
US9622375B2 (en) | 2013-12-31 | 2017-04-11 | Applied Materials, Inc. | Electrostatic chuck with external flow adjustments for improved temperature distribution |
US9111907B2 (en) | 2014-01-02 | 2015-08-18 | Globalfoundries Inc. | Silicide protection during contact metallization and resulting semiconductor structures |
US20150200042A1 (en) | 2014-01-10 | 2015-07-16 | Applied Materials, Inc. | Recessing ultra-low k dielectric using remote plasma source |
US9287134B2 (en) | 2014-01-17 | 2016-03-15 | Applied Materials, Inc. | Titanium oxide etch |
US9396989B2 (en) | 2014-01-27 | 2016-07-19 | Applied Materials, Inc. | Air gaps between copper lines |
US20150214066A1 (en) | 2014-01-27 | 2015-07-30 | Applied Materials, Inc. | Method for material removal in dry etch reactor |
US9293568B2 (en) | 2014-01-27 | 2016-03-22 | Applied Materials, Inc. | Method of fin patterning |
US9502218B2 (en) | 2014-01-31 | 2016-11-22 | Applied Materials, Inc. | RPS assisted RF plasma source for semiconductor processing |
US9385028B2 (en) | 2014-02-03 | 2016-07-05 | Applied Materials, Inc. | Air gap process |
US9305749B2 (en) | 2014-02-10 | 2016-04-05 | Applied Materials, Inc. | Methods of directing magnetic fields in a plasma source, and associated systems |
JP6059165B2 (ja) | 2014-02-19 | 2017-01-11 | 東京エレクトロン株式会社 | エッチング方法、及びプラズマ処理装置 |
US9499898B2 (en) | 2014-03-03 | 2016-11-22 | Applied Materials, Inc. | Layered thin film heater and method of fabrication |
US9299575B2 (en) | 2014-03-17 | 2016-03-29 | Applied Materials, Inc. | Gas-phase tungsten etch |
US9299538B2 (en) | 2014-03-20 | 2016-03-29 | Applied Materials, Inc. | Radial waveguide systems and methods for post-match control of microwaves |
US9299537B2 (en) | 2014-03-20 | 2016-03-29 | Applied Materials, Inc. | Radial waveguide systems and methods for post-match control of microwaves |
US9136273B1 (en) | 2014-03-21 | 2015-09-15 | Applied Materials, Inc. | Flash gate air gap |
US9190290B2 (en) | 2014-03-31 | 2015-11-17 | Applied Materials, Inc. | Halogen-free gas-phase silicon etch |
US9903020B2 (en) | 2014-03-31 | 2018-02-27 | Applied Materials, Inc. | Generation of compact alumina passivation layers on aluminum plasma equipment components |
US9269590B2 (en) | 2014-04-07 | 2016-02-23 | Applied Materials, Inc. | Spacer formation |
KR102175763B1 (ko) | 2014-04-09 | 2020-11-09 | 삼성전자주식회사 | 반도체 메모리 장치 및 이의 제조 방법 |
US9881788B2 (en) | 2014-05-22 | 2018-01-30 | Lam Research Corporation | Back side deposition apparatus and applications |
US9309598B2 (en) | 2014-05-28 | 2016-04-12 | Applied Materials, Inc. | Oxide and metal removal |
US9773683B2 (en) | 2014-06-09 | 2017-09-26 | American Air Liquide, Inc. | Atomic layer or cyclic plasma etching chemistries and processes |
US9666449B2 (en) | 2014-06-17 | 2017-05-30 | Micron Technology, Inc. | Conductors having a variable concentration of germanium for governing removal rates of the conductor during control gate formation |
US9406523B2 (en) | 2014-06-19 | 2016-08-02 | Applied Materials, Inc. | Highly selective doped oxide removal method |
US9378969B2 (en) | 2014-06-19 | 2016-06-28 | Applied Materials, Inc. | Low temperature gas-phase carbon removal |
US20150371865A1 (en) | 2014-06-19 | 2015-12-24 | Applied Materials, Inc. | High selectivity gas phase silicon nitride removal |
US20150371861A1 (en) | 2014-06-23 | 2015-12-24 | Applied Materials, Inc. | Protective silicon oxide patterning |
KR102248205B1 (ko) | 2014-06-25 | 2021-05-04 | 삼성전자주식회사 | 수직 채널 및 에어 갭을 갖는 반도체 소자 |
KR20160002543A (ko) | 2014-06-30 | 2016-01-08 | 세메스 주식회사 | 기판 처리 장치 |
US20160005833A1 (en) | 2014-07-03 | 2016-01-07 | Applied Materials, Inc. | Feol low-k spacers |
US9425058B2 (en) | 2014-07-24 | 2016-08-23 | Applied Materials, Inc. | Simplified litho-etch-litho-etch process |
US9378978B2 (en) | 2014-07-31 | 2016-06-28 | Applied Materials, Inc. | Integrated oxide recess and floating gate fin trimming |
US9159606B1 (en) | 2014-07-31 | 2015-10-13 | Applied Materials, Inc. | Metal air gap |
US9496167B2 (en) | 2014-07-31 | 2016-11-15 | Applied Materials, Inc. | Integrated bit-line airgap formation and gate stack post clean |
US20160043099A1 (en) | 2014-08-05 | 2016-02-11 | Applied Materials, Inc. | Wordline 3d flash memory air gap |
US20160042968A1 (en) | 2014-08-05 | 2016-02-11 | Applied Materials, Inc. | Integrated oxide and si etch for 3d cell channel mobility improvements |
US9165786B1 (en) | 2014-08-05 | 2015-10-20 | Applied Materials, Inc. | Integrated oxide and nitride recess for better channel contact in 3D architectures |
US9659753B2 (en) | 2014-08-07 | 2017-05-23 | Applied Materials, Inc. | Grooved insulator to reduce leakage current |
US9553102B2 (en) | 2014-08-19 | 2017-01-24 | Applied Materials, Inc. | Tungsten separation |
US9558928B2 (en) | 2014-08-29 | 2017-01-31 | Lam Research Corporation | Contact clean in high-aspect ratio structures |
US9355856B2 (en) | 2014-09-12 | 2016-05-31 | Applied Materials, Inc. | V trench dry etch |
US9368364B2 (en) | 2014-09-24 | 2016-06-14 | Applied Materials, Inc. | Silicon etch process with tunable selectivity to SiO2 and other materials |
US10083818B2 (en) | 2014-09-24 | 2018-09-25 | Applied Materials, Inc. | Auto frequency tuned remote plasma source |
US9478434B2 (en) | 2014-09-24 | 2016-10-25 | Applied Materials, Inc. | Chlorine-based hardmask removal |
US9613822B2 (en) | 2014-09-25 | 2017-04-04 | Applied Materials, Inc. | Oxide etch selectivity enhancement |
CN105448737A (zh) | 2014-09-30 | 2016-03-30 | 联华电子股份有限公司 | 用以形成硅凹槽的蚀刻制作工艺方法与鳍式场效晶体管 |
US9240315B1 (en) | 2014-10-10 | 2016-01-19 | Applied Materials, Inc. | CVD oxide surface pre-conditioning by inductively coupled O2 plasma |
US9355922B2 (en) | 2014-10-14 | 2016-05-31 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
US9652567B2 (en) | 2014-10-20 | 2017-05-16 | Lam Research Corporation | System, method and apparatus for improving accuracy of RF transmission models for selected portions of an RF transmission path |
US9508529B2 (en) | 2014-10-23 | 2016-11-29 | Lam Research Corporation | System, method and apparatus for RF power compensation in a plasma processing system |
US10102321B2 (en) | 2014-10-24 | 2018-10-16 | Lam Research Corporation | System, method and apparatus for refining radio frequency transmission system models |
US9202708B1 (en) | 2014-10-24 | 2015-12-01 | Applied Materials, Inc. | Doped silicon oxide etch |
US9368369B2 (en) | 2014-11-06 | 2016-06-14 | Applied Materials, Inc. | Methods for forming a self-aligned contact via selective lateral etch |
US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
US9799509B2 (en) | 2014-11-26 | 2017-10-24 | Asm Ip Holding B.V. | Cyclic aluminum oxynitride deposition |
JP6320282B2 (ja) | 2014-12-05 | 2018-05-09 | 東京エレクトロン株式会社 | エッチング方法 |
US9299583B1 (en) | 2014-12-05 | 2016-03-29 | Applied Materials, Inc. | Aluminum oxide selective etch |
US10573496B2 (en) | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
US20160181116A1 (en) | 2014-12-18 | 2016-06-23 | Lam Research Corporation | Selective nitride etch |
US9396961B2 (en) | 2014-12-22 | 2016-07-19 | Lam Research Corporation | Integrated etch/clean for dielectric etch applications |
US9502258B2 (en) | 2014-12-23 | 2016-11-22 | Applied Materials, Inc. | Anisotropic gap etch |
US9431268B2 (en) | 2015-01-05 | 2016-08-30 | Lam Research Corporation | Isotropic atomic layer etch for silicon and germanium oxides |
US9633867B2 (en) | 2015-01-05 | 2017-04-25 | Lam Research Corporation | Method and apparatus for anisotropic tungsten etching |
US9425041B2 (en) | 2015-01-06 | 2016-08-23 | Lam Research Corporation | Isotropic atomic layer etch for silicon oxides using no activation |
US9343272B1 (en) | 2015-01-08 | 2016-05-17 | Applied Materials, Inc. | Self-aligned process |
US11257693B2 (en) | 2015-01-09 | 2022-02-22 | Applied Materials, Inc. | Methods and systems to improve pedestal temperature control |
US9373522B1 (en) | 2015-01-22 | 2016-06-21 | Applied Mateials, Inc. | Titanium nitride removal |
US9449846B2 (en) | 2015-01-28 | 2016-09-20 | Applied Materials, Inc. | Vertical gate separation |
US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
US9728437B2 (en) | 2015-02-03 | 2017-08-08 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
US20160237570A1 (en) | 2015-02-13 | 2016-08-18 | Applied Materials, Inc. | Gas delivery apparatus for process equipment |
US9275834B1 (en) | 2015-02-20 | 2016-03-01 | Applied Materials, Inc. | Selective titanium nitride etch |
US9343358B1 (en) | 2015-02-23 | 2016-05-17 | Sandisk Technologies Inc. | Three-dimensional memory device with stress compensation layer within a word line stack |
US9881805B2 (en) | 2015-03-02 | 2018-01-30 | Applied Materials, Inc. | Silicon selective removal |
TWI670749B (zh) | 2015-03-13 | 2019-09-01 | 美商應用材料股份有限公司 | 耦接至工藝腔室的電漿源 |
US9478433B1 (en) | 2015-03-30 | 2016-10-25 | Applied Materials, Inc. | Cyclic spacer etching process with improved profile control |
KR102452593B1 (ko) | 2015-04-15 | 2022-10-11 | 삼성전자주식회사 | 반도체 장치의 제조 방법 |
US20160307772A1 (en) | 2015-04-15 | 2016-10-20 | Applied Materials, Inc. | Spacer formation process with flat top profile |
US9870899B2 (en) | 2015-04-24 | 2018-01-16 | Lam Research Corporation | Cobalt etch back |
US9576788B2 (en) | 2015-04-24 | 2017-02-21 | Applied Materials, Inc. | Cleaning high aspect ratio vias |
US9659791B2 (en) | 2015-07-16 | 2017-05-23 | Applied Materials, Inc. | Metal removal with reduced surface roughness |
US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US9691645B2 (en) | 2015-08-06 | 2017-06-27 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
US9349605B1 (en) | 2015-08-07 | 2016-05-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
US9972504B2 (en) | 2015-08-07 | 2018-05-15 | Lam Research Corporation | Atomic layer etching of tungsten for enhanced tungsten deposition fill |
US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
US9837286B2 (en) | 2015-09-04 | 2017-12-05 | Lam Research Corporation | Systems and methods for selectively etching tungsten in a downstream reactor |
US9564338B1 (en) | 2015-09-08 | 2017-02-07 | Applied Materials, Inc. | Silicon-selective removal |
US9460959B1 (en) | 2015-10-02 | 2016-10-04 | Applied Materials, Inc. | Methods for pre-cleaning conductive interconnect structures |
US10192751B2 (en) | 2015-10-15 | 2019-01-29 | Lam Research Corporation | Systems and methods for ultrahigh selective nitride etch |
US20170133202A1 (en) | 2015-11-09 | 2017-05-11 | Lam Research Corporation | Computer addressable plasma density modification for etch and deposition processes |
US9831097B2 (en) | 2015-12-18 | 2017-11-28 | Applied Materials, Inc. | Methods for selective etching of a silicon material using HF gas without nitrogen etchants |
TWI692799B (zh) | 2015-12-18 | 2020-05-01 | 美商應用材料股份有限公司 | 清潔方法 |
US10147588B2 (en) | 2016-02-12 | 2018-12-04 | Lam Research Corporation | System and method for increasing electron density levels in a plasma of a substrate processing system |
US10522371B2 (en) | 2016-05-19 | 2019-12-31 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US9865484B1 (en) | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
US20180025900A1 (en) | 2016-07-22 | 2018-01-25 | Applied Materials, Inc. | Alkali metal and alkali earth metal reduction |
US10062575B2 (en) | 2016-09-09 | 2018-08-28 | Applied Materials, Inc. | Poly directional etch by oxidation |
US10629473B2 (en) | 2016-09-09 | 2020-04-21 | Applied Materials, Inc. | Footing removal for nitride spacer |
WO2018052477A2 (en) | 2016-09-15 | 2018-03-22 | Applied Materials, Inc. | An integrated method for wafer outgassing reduction |
US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
US9721789B1 (en) | 2016-10-04 | 2017-08-01 | Applied Materials, Inc. | Saving ion-damaged spacers |
US10062585B2 (en) | 2016-10-04 | 2018-08-28 | Applied Materials, Inc. | Oxygen compatible plasma source |
US9934942B1 (en) | 2016-10-04 | 2018-04-03 | Applied Materials, Inc. | Chamber with flow-through source |
US10062579B2 (en) | 2016-10-07 | 2018-08-28 | Applied Materials, Inc. | Selective SiN lateral recess |
US9947549B1 (en) | 2016-10-10 | 2018-04-17 | Applied Materials, Inc. | Cobalt-containing material removal |
US10163696B2 (en) | 2016-11-11 | 2018-12-25 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
US9768034B1 (en) | 2016-11-11 | 2017-09-19 | Applied Materials, Inc. | Removal methods for high aspect ratio structures |
US10242908B2 (en) | 2016-11-14 | 2019-03-26 | Applied Materials, Inc. | Airgap formation with damage-free copper |
US10026621B2 (en) | 2016-11-14 | 2018-07-17 | Applied Materials, Inc. | SiN spacer profile patterning |
US10566206B2 (en) | 2016-12-27 | 2020-02-18 | Applied Materials, Inc. | Systems and methods for anisotropic material breakthrough |
US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
US10403507B2 (en) | 2017-02-03 | 2019-09-03 | Applied Materials, Inc. | Shaped etch profile with oxidation |
US10043684B1 (en) | 2017-02-06 | 2018-08-07 | Applied Materials, Inc. | Self-limiting atomic thermal etching systems and methods |
US9779956B1 (en) | 2017-02-06 | 2017-10-03 | Lam Research Corporation | Hydrogen activated atomic layer etching |
US10319739B2 (en) | 2017-02-08 | 2019-06-11 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
US20180261686A1 (en) | 2017-03-13 | 2018-09-13 | Applied Materials, Inc. | Transistor sidewall formation process |
US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
US10049891B1 (en) | 2017-05-31 | 2018-08-14 | Applied Materials, Inc. | Selective in situ cobalt residue removal |
US10043674B1 (en) | 2017-08-04 | 2018-08-07 | Applied Materials, Inc. | Germanium etching systems and methods |
-
2014
- 2014-12-09 US US14/565,077 patent/US10224210B2/en active Active
-
2015
- 2015-11-18 WO PCT/US2015/061372 patent/WO2016094047A1/en active Application Filing
- 2015-11-18 KR KR1020177018845A patent/KR102468600B1/ko active IP Right Grant
- 2015-11-18 JP JP2017530134A patent/JP6752205B2/ja active Active
- 2015-11-18 CN CN201580066116.8A patent/CN107004561B/zh active Active
- 2015-11-25 TW TW104139245A patent/TWI702630B/zh active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020046991A1 (en) * | 1997-06-26 | 2002-04-25 | Smith Donald K. | Toroidal low-field reactive gas source |
US20010006093A1 (en) * | 1999-12-07 | 2001-07-05 | Toshihiro Tabuchi | Surface treatment apparatus |
US20040107908A1 (en) * | 2002-06-05 | 2004-06-10 | Applied Materials, Inc. | Plasma immersion ion implantation apparatus including an inductively coupled plasma source having low dissociation and low minimum plasma voltage |
KR100663668B1 (ko) * | 2005-12-07 | 2007-01-09 | 주식회사 뉴파워 프라즈마 | 복수의 기판을 병렬 배치 처리하기 위한 플라즈마 처리장치 |
KR20070079870A (ko) * | 2006-02-04 | 2007-08-08 | 위순임 | 다중 출력 원격 플라즈마 발생기 및 이를 구비한 기판 처리시스템 |
KR100678696B1 (ko) * | 2006-02-08 | 2007-02-06 | 주식회사 뉴파워 프라즈마 | 환형 플라즈마를 형성하기 위한 페라이트 코어 조립체를구비한 자기 강화된 플라즈마 소오스 |
CN102893705A (zh) * | 2010-05-14 | 2013-01-23 | 应用材料公司 | 使用磁场集中器的具有金属喷淋头的电感应式等离子体源 |
US20120031559A1 (en) * | 2010-08-04 | 2012-02-09 | Lam Research Corporation | Dual Plasma Volume Processing Apparatus for Neutral/Ion Flux Control |
US20120035766A1 (en) * | 2010-08-06 | 2012-02-09 | Ali Shajii | Systems, methods and apparatus for choked flow element extraction |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113195785A (zh) * | 2018-10-18 | 2021-07-30 | 玳萌珠宝商贸有限公司 | 从成角度的气体流辅助的等离子体的轴对称材料沉积 |
Also Published As
Publication number | Publication date |
---|---|
JP6752205B2 (ja) | 2020-09-09 |
KR102468600B1 (ko) | 2022-11-21 |
JP2017537446A (ja) | 2017-12-14 |
TW201626426A (zh) | 2016-07-16 |
TWI702630B (zh) | 2020-08-21 |
CN107004561B (zh) | 2020-07-31 |
US20160163513A1 (en) | 2016-06-09 |
US10224210B2 (en) | 2019-03-05 |
KR20170093929A (ko) | 2017-08-16 |
WO2016094047A1 (en) | 2016-06-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN107004561A (zh) | 具有直接出口环状等离子体源的等离子体处理系统 | |
TWI701703B (zh) | 用於供應電漿產物之裝置 | |
US20190330748A1 (en) | Gas distribution hub for plasma processing chamber | |
US8961736B2 (en) | Plasma reactor with internal transformer | |
CN202285227U (zh) | 一种用作电容耦合等离子体处理室的部件的限定环 | |
US7363876B2 (en) | Multi-core transformer plasma source | |
US9171702B2 (en) | Consumable isolation ring for movable substrate support assembly of a plasma processing chamber | |
US20120097330A1 (en) | Dual delivery chamber design | |
CN106414800A (zh) | 用于处理管道中的气体的设备 | |
KR20150038130A (ko) | 동축 rf 피드 및 동축 실딩을 갖는 대칭적 유도 결합된 플라즈마 소스 | |
WO2023143094A1 (zh) | 半导体工艺设备 | |
KR100793457B1 (ko) | 다중 방전실을 갖는 플라즈마 반응기 | |
KR20220107521A (ko) | 반응기, 이를 포함하는 공정 처리 장치 및 반응기 제조 방법 | |
CN116614930A (zh) | 一种等离子体发生装置、晶圆处理设备 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |