TW201842603A - 用於遠端電漿監控之光學放射頻譜儀(oes) - Google Patents
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Abstract
本申請描述一種使用遠端電漿來蝕刻基板的方法和系統。遠端激發的蝕刻劑係形成在遠端電漿中,並通過噴頭流入基板處理區域以蝕刻基板。從基板正上方的基板處理區域獲取光學放射頻譜。光學放射頻譜可用於決定蝕刻的終點、決定蝕刻速率,或用於表徵蝕刻製程。弱電漿可能存在於基板處理區域中。弱電漿可能相較於遠端電漿具有低得多的強度。在蝕刻製程中於基板上方不使用偏壓電漿的情況下,可以在靠近基板處理區域一側所設置的視埠附近,點燃弱電漿以表徵蝕刻劑。
Description
本文揭露的實施例係關於遠端電漿蝕刻製程。
積體電路透過採用在基板表面上產生精細圖案化材料層的製程而成為可能。在基板上製造圖案化材料需要用於去除暴露材料的受控方法。化學蝕刻用於各種目的,包括將光阻圖案轉移到下面的層中,減薄化層或減薄化已經存在於表面上的特徵的橫向尺寸。通常希望有一種蝕刻製程可更快地蝕刻一種材料而較慢地蝕刻另一種材料,以有助於例如進行圖案轉移製程。這樣的蝕刻製程被稱作:相對於第二材料選擇第一材料。由於材料、電路和製程的多樣性,已經開發了對多種材料具有選擇能力的蝕刻製程。
為了選擇性地從半導體基板去除材料,通常需要乾蝕刻製程。此需求起因於希望具有能夠以最小的物理干擾從微型結構中輕輕地移除材料的能力。乾蝕刻製程還可以通過去除氣相反應物來突然停止蝕刻速率。一些乾蝕刻製程涉及將基板暴露於由一或多種前驅物形成的遠端電漿副產物。遠端電漿系統中的蝕刻劑的遠端激發(而非本地端)可以期望地提高選擇性。
基於各種目的,本領域需要方法和系統來監測遠端電漿的各方面的原位特徵。
描述了使用遠端電漿蝕刻基板的方法和系統。 遠端激發的蝕刻劑係形成在遠端電漿中,並通過噴頭流入基板處理區域以蝕刻基板。從基板正上方的基板處理區域獲取光學放射頻譜。光學放射頻譜可用於決定蝕刻的終點,決定蝕刻速率或原位表徵蝕刻製程。弱電漿可存在於基板處理區域中。弱電漿可具有比遠端電漿低的強度。在蝕刻製程中於基板上方不使用偏壓電漿的情況下,可以在靠近基板處理區域的一側所設置的視埠附近,點燃弱電漿以表徵蝕刻劑。
本文揭露的實施例包括蝕刻基板的方法。該等方法包括將基板放置在基板處理室的基板處理區域中。該等方法還包括將含氟前驅物流入遠端電漿區域,該遠端電漿區域藉由噴頭而與基板處理區域分離。該等方法還包括在遠端電漿區域中形成具有遠端電漿功率的遠端電漿。該等方法還包括從遠端電漿區域中的遠端電漿中的含氟前驅物產生電漿流出物。該等方法還包括使電漿流出物流過噴頭進入基板處理區域。該等方法還包括以電漿流出物蝕刻基板。該等方法還包括在基板處理區域中形成具有一本地端電漿功率的本地端電漿。該等方法還包括獲取通過固定至基板處理室一側(形成基板處理區域的邊界)的視埠的光學放射頻譜。光學放射頻譜表示基於光學波長的強度,並且使用光學放射頻譜儀獲得光學放射頻譜。
遠端電漿的遠端電漿功率可超過本地端電漿的本地端電漿功率十倍或更多。本地端電漿可居中於基板上。本地端電漿可位於基板之上並在靠近視埠的基板的一邊緣之外。本地端電漿可使用位於視埠外側的電極形成,且本地端電漿功率可施加在該電極和基板處理室之間。本地端電漿可使用第一電極和第二電極形成,每一電極位於視埠的外側,並且本地端電漿功率可以施加在第一電極和第二電極之間。
本文揭露的實施例包括基板處理室。基板處理室包括遠端電漿區域。遠端電漿區域係配置以接收含氟前驅物並且由該含氟前驅物形成遠端電漿。基板處理室還包括遠端電漿功率供應,該遠端電漿功率供應係配置以將遠端電漿功率施加至遠端電漿區域,並係配置以形成遠端電漿。基板處理室還包括基板處理區域。基板處理室還包括位於遠端電漿區域和基板處理區域之間的噴頭。基板處理區域藉由噴頭中的通孔流體耦合到遠端電漿區域。基板處理室還包括配置以支撐基板的基座。基板處理室還包括附接到基板處理室的凸緣。凸緣與基板處理室形成真空密封。基板處理室還包括附接到凸緣且與凸緣形成真空密封的視埠。該視埠在近紅外光譜中是光學透射的。基板處理室還包括配置以在光輻射通過視埠之後接收該光輻射的光學放射頻譜儀。光學放射頻譜儀係位於視埠的外部,並且光輻射源自基板上方的基板處理區域內部。
基板處理室還可包括本地端電漿功率供應,該本地端電漿功率供應係配置以在基板處理區域中形成本地端電漿。本地端電漿可具有小於遠端電漿功率的10%的一本地端電漿功率。基板處理室還可包括經配置以將光輻射從視埠引導至光學放射頻譜儀的光纖電纜。基板處理室還可包括靠近視埠的電極,該電極可位於視埠的外部。基板處理室還可包括經配置以將電漿功率施加至電極的電漿功率供應。基板處理室還可包括經配置以向電極施加電漿功率的第二電極,該電極可與第二電極電絕緣。
本文揭露的實施例包括光學放射頻譜儀組件。該光學放射頻譜儀組件包括經配置以附接到基板處理室的凸緣。凸緣係配置以與基板處理室形成真空密封。光學放射頻譜儀組件還包括附接到凸緣且與該凸緣形成真空密封的平面視埠。平面視埠在近紅外光譜中是光學透射的。光學放射頻譜儀組件還包括接近平面視埠的電極,該電極設置在平面視埠的一外側。該光學放射頻譜儀組件還包括光學放射頻譜儀,該光學放射頻譜儀係配置以在光輻射通過平面視埠之後接收該光輻射。光學放射頻譜儀係位於平面視埠的該外側。該光學放射頻譜儀組件還包括經配置以將電漿功率施加至電極的電漿功率供應。
光學放射頻譜儀組件還可包括經配置以將來自平面視埠的紅外光引導至光學放射頻譜儀的光纖電纜。電漿功率供應可經配置以在電極和基板處理室之間施加電漿功率。光學放射頻譜儀組件還可包括靠近平面視埠的第二電極。電極可與第二電極電絕緣。電漿功率供應可經配置以在電極和第二電極之間施加電漿功率。
額外的實施方式和特徵將在下文的描述中闡述,而其餘部分對於本領域技術人員在查閱說明書後將變得顯而易見,或者可以透過實現所揭露的實施方式而了解。所揭露的實施例的特徵和優點可以透過說明書中描述的手段、組合和方法來實現和獲得。
本文描述了使用遠端電漿蝕刻基板的方法和系統。遠端激發的蝕刻劑係形成在遠端電漿中,並通過噴頭流入基板處理區域以蝕刻基板。從基板正上方的基板處理區域獲取光學放射頻譜。光學放射頻譜可用於決定蝕刻終點,決定蝕刻速率或原位表徵蝕刻製程。弱電漿可能存在於基板處理區域中。弱電漿比遠端電漿可具有低得多的強度。在蝕刻製程中於基板上方不使用偏壓電漿的情況下,可以在靠近基板處理區域的一側所設置的視埠附近,點燃弱電漿以表徵蝕刻劑。
過去,氣相蝕刻製程係在基板處理區域內的本地端電漿中激發NF3。透過將基板處理區域中的一些反應物通過管而流動至用於表徵的獨立的電漿,然後通過真空泵處理任何化學流出物,來執行光學放射頻譜技術。最近,使用藉由噴頭(有時是雙通道噴頭)而與基板處理區域隔離的空間受限的遠端電漿區域,開發了高選擇性氣相蝕刻製程。電漿流出物係在遠端電漿區域中形成並通過噴頭流入基板處理區域。遠端電漿流出物可選地在基板上方的偏壓電漿中被進一步激發。
本文描述的方法和系統提供了在基板處理區域中表徵遠端電漿蝕刻製程的益處,其中基板處理區域比遠端電漿區域具有更多的空間。電漿流出物的表徵發生在更接近於基板的位置,與先前使用的較迂迴的採樣路徑相比,能更準確的確定蝕刻製程。
第1圖示出示例性基板處理室的示意性橫截面圖。 基板處理室1001的示意圖用於介紹光學放射頻譜儀,但也提供用於後續描述中提到的替代配置和細節的背景。與第1圖相比,後續的附圖將提供較少的細節,但只是為了簡潔目的。在第1圖中發現的特徵的任何組合可存在於任何或所有後續實施例中。基板處理室1001內部具有遠端電漿區域1015和基板處理區域1033。遠端電漿區域1015,藉由離子抑制器1023和噴頭1025,與基板處理區域1033分隔開。
根據本文所述的所有實施例,第1圖示出了頂板1017、離子抑制器1023、噴頭1025和其上設置有基板1055的基板支撐件1065(也稱為基座),並且以上各者皆可被包含於所有實施例中。基座1065可具有熱交換通道,熱交換流體流過該熱交換通道以控制基板1055的溫度。此配置可允許基板1055的溫度被冷卻或加熱以維持相對低的溫度,例如在-20℃ 到200℃之間。使用嵌入式加熱器元件,基座1065也可被電阻式加熱到相對高的溫度,例如在100℃和1100℃之間。
蝕刻劑前驅物從蝕刻劑供應系統1010流出,通過頂板1017中的孔,進入遠端電漿區域1015。結構特徵可包括選擇頂板1017中的孔的尺寸和橫截面幾何形狀,以在遠端電漿區域1015中產生電漿的情況下,去激活(deactivate)返流入的電漿。頂板1017或基板處理室1001的導電頂部以及噴頭1025,被示出為具有中間絕緣環1020,其允許相對於噴頭1025和/或離子抑制器1023施加AC電位至頂板1017。絕緣環1020可定位在頂板1017和噴頭1025和/或離子抑制器1023之間,以實現在遠端電漿區域1015中形成電容耦合電漿(CCP)。遠端電漿區域1015容納遠端電漿。
離子抑制器1023中的複數個孔可經配置以控制激活的氣體(即,離子、自由基和/或中性物質)通過離子抑制器1023。例如,可選擇孔的深寬比、或孔徑與長度的比值和/或孔的幾何形狀,使得通過離子抑制器1023的激活氣體中的離子帶電物質的流動減少。離子抑制器1023中的多孔可包括面向遠端電漿區域1015的錐形部分,和面向噴頭1025的圓柱形部分。圓柱形部分可被成形和制定尺寸,以控制到達並通過噴頭1025的離子物質的流動。還可以將可調節電偏壓施加至離子抑制器1023,作為控制離子物質通過抑制器的流動的附加手段。離子抑制器1023可用於減少或消除從電漿生成區域行經到基板的離子帶電物質的量。不帶電的中性和自由基物質仍可通過離子抑制器的開口而與基板反應。
遠端電漿功率可具有各種頻率或多種頻率的組合。可相對於離子抑制器1023、相對於噴頭1025或相對於離子抑制器1023和噴頭1025二者,藉由從遠端電漿功率供應1068傳送至頂板1017的遠端RF功率,來提供遠端電漿(如示出)。 遠端RF功率可在10瓦和10,000瓦之間、在10瓦和5000瓦之間、優選地在25瓦和2000瓦之間,或者更優選地在50瓦和1500瓦之間,以增加腔室部件的壽命。在示例性處理系統中應用於遠端電漿區域的遠端RF頻率,於實施例中可為低於200kHz的低RF頻率、10MHz至15MHz之間的較高RF頻率,或高於1GHz的微波頻率。電漿功率可電容耦合(CCP)或電感耦合(ICP)至遠端電漿區域。
於實施例中,從遠端電漿區域1015中的蝕刻劑前驅物得到的電漿流出物可流動通過離子抑制器1023中的孔,和/或流經噴頭1025,並通過噴頭的通孔或第一流體通道1019,進入基板處理區域1033。在遠端電漿蝕刻製程期間,基板處理區域1033中可存在很少電漿或不存在電漿。電漿流出物與基板反應,以從基板上蝕刻材料。
噴頭1025可以是雙通道噴頭(DCSH)。雙通道噴頭1025可提供蝕刻製程,其中允許在基板處理區域1033外部分離蝕刻劑,以在蝕刻劑被遞送到基板處理區域1033之前提供蝕刻劑與腔室部件以及蝕刻劑彼此間的有限相互作用。噴頭1025可包括上板1014和下板1016。多數板可彼此耦接以限定板之間的容積1018。板的配置可提供通過上板和下板的第一流體通道1019,以及通過下板1016的第二流體通道1021。形成的通道可經配置以單獨經由第二流體通道1021,通過下板1016從容積1018提供流體進出,並且第一流體通道1019可與板及第二流體通道1021之間的容積1018流體隔離。在實施例中,容積1018可通過噴頭1025的一側讓流體進出,並且用於供應未激發前驅物。
可選地,在實施例中,偏壓電漿功率可存在於基板處理區域中。偏壓電漿可用於進一步激發已經在遠端電漿中激發的電漿流出物。偏壓電漿係指位於基板正上方的本地端電漿。使用術語偏壓電漿,是因為電漿流出物可被離子化和/或被加速朝向基板,以有利地加速或提供對某些蝕刻製程的進入對準。可透過相對於離子抑制器1023、相對於噴頭1025(如圖所示)或相對於離子抑制器1023和噴頭1025兩者,將偏壓電漿功率從偏壓電漿功率供應1069施加至基板1055/基座1065,來形成偏壓電漿。偏壓RF電漿功率可低於遠端RF功率。偏壓RF電漿功率可低於遠端RF電漿功率的20%、低於15%、低於10%,或低於5%。在實施例中,偏壓RF電漿功率可在1瓦和1000瓦之間、在1瓦和500瓦之間,或者在2瓦和100瓦之間。在示例性處理系統中施加至遠端電漿區域的偏壓RF電漿頻率,在實施例中可為低於200kHz的低RF電漿頻率、在10MHz和15MHz之間的較高RF電漿頻率,或高於1GHz的微波頻率。偏壓RF電漿頻率可不同於遠端RF頻率,以進一步改善光學放射頻譜的完整性。電漿功率可電容耦合(CCP)或電感耦合(ICP)至基板電漿區域。
視埠1071係設置在基板處理室1001的一側上,並且形成基板處理區域1033的邊界。視埠1071傳輸光輻射且對光譜的紅外部分為透射。在實施例中,本文描述的視埠可在650nm與800nm之間、在680nm與760nm之間,或在700nm與740nm之間透射。光學放射頻譜儀(OES)係佈置在視埠1071的外部,且經配置為接收源自在基板處理區域1033中形成的偏壓電漿的光輻射,優選為紅外輻射。在沒有偏壓電漿的情況下,弱電漿可形成在視埠1071的內側上,以促進由光學放射頻譜儀獲取光學放射頻譜。根據實施例,弱電漿的特性(功率、頻率)可與之前提供的偏壓功率特性相同。例如,弱RF電漿功率可低於遠端RF電漿功率的20%、低於15%、低於10%,或低於5%。在實施例中,弱RF電漿功率可在1瓦和1000瓦之間、在1瓦和500瓦之間,或在2瓦和100瓦之間。在示例性處理系統中施加至遠端電漿區域的弱RF電漿頻率,在實施例中可為低於200kHz的低RF電漿頻率、在10MHz和15MHz之間的較高RF電漿頻率,或高於1GHz的微波頻率。弱RF電漿頻率可與遠端RF頻率不同,以進一步改善光學放射頻譜的完整性。弱電漿功率可電容耦合(CCP)或電感耦合(ICP)至基板電漿區域。
為了更好地理解和領會本文揭露的實施例,現在參考第2圖,第2圖係根據實施例的高選擇性蝕刻製程2010的流程圖。在第一操作之前,在選擇性操作2100中,基板被圖案化,然後被放置在基板處理區域內。在操作2200中,含氟前驅物(例如,NF3)可流入遠端電漿區域。遠端電漿係由遠端電漿區域中的含氟前驅物形成,其係藉由在遠端電漿區域上施加遠端電漿功率以形成電漿流出物來實現。在操作2300中,電漿流出物流過設置在遠端電漿區域和基板處理區域之間的噴頭。電漿流出物從遠端電漿區域流過噴頭而進入基板處理區域。在操作2400中,藉由在基板處理區域上施加偏壓電漿功率來形成偏壓電漿,以進一步激發電漿流出物。在實施例中,偏壓電漿功率小於遠端電漿功率,且偏壓電漿可被稱為「弱」電漿。在操作2500中,選擇性蝕刻圖案化基板的部分。獲取通過基板處理室一側的視埠的光學放射頻譜(操作2600),並且基於所得光譜結果停止蝕刻。視埠形成基板處理區域的邊界。可選地,將圖案化的基板移離基板處理區域(操作2700)。
第3A圖示出了示例性基板處理室的示意性橫截面圖。先前給出的製程和設備參數適用於在此描述的所有實施例。類似地,此處和隨後論述中給出的製程和設備參數可用於本文所述的所有其他實施例。基板處理室3001內部具有遠端電漿區域3015和基板處理區域3033。遠端電漿區域3015藉由噴頭3025而與基板處理區域3033分隔開,其中噴頭3025具有通孔3019,通孔3019經配置成使電漿流出物通過。
示出了頂板3017、噴頭3025和支撐基板3055的基座3065。含氟前驅物可從蝕刻劑供應系統3010流入遠端電漿區域3015。頂板3017和噴頭3025係為由絕緣環3020分開的電分離的導體。相對於噴頭3025,施加AC電位(遠端電漿功率)至頂板3017,以形成遠端電漿。 遠端電漿可為遠端電漿區域3015中的電容耦合電漿(CCP)。先前提供了由遠端電漿功率供應(未示出)提供的電漿頻率和電漿功率。
源自遠端電漿區域3015中的氟前驅物的電漿流出物,可行進通過噴頭3025中的通孔3019並進入基板處理區域3033。偏壓電漿功率係由偏壓電漿功率供應(未示出)施加至基板處理區域3033。偏壓電漿進一步激發電漿流出物。偏壓電漿弱離子化電漿流出物,並加速電漿流出物流向基板,以有利地加速或提供對蝕刻製程的進入對準(incoming alignment)。可透過從偏壓電漿功率供應向基板3055/基座3065施加相對於噴頭3025的偏壓電漿功率,來形成偏壓電漿。電漿流出物與基板反應以從基板蝕刻材料。
光學放射頻譜的獲取,係使用電子與離子的重組來放射指示特定原子種類的存在的光子。在第3A圖所示的實施例中,偏壓電漿足以提供獲取光學放射頻譜所需的離子化。為了進一步進行量測,將視埠3071設置在基板處理室3001的一側。使用視埠3071外側的光學放射頻譜儀來量測光學放射頻譜。
第3B圖示出示例性基板處理室的示意性橫截面圖。基板處理室3001內部具有遠端電漿區域3015和基板處理區域3033。遠端電漿區域3015藉由具有通孔3019的噴頭3025而與基板處理區域3033分隔開,通孔3019用以傳遞電漿流出物。圖中示出了頂板3017、噴頭3025和支撐基板3055的基座3065。含氟前驅物可從蝕刻劑供應系統3010流入遠端電漿區域3015。AC電位(遠端電漿功率)相對於噴頭3025被施加至頂板3017以形成遠端電漿。
源自遠端電漿區域3015中的氟前驅物的電漿流出物,行進通過噴頭3025中的通孔3019並進入基板處理區域3033。電漿流出物與基板反應,以從基板蝕刻材料。
在實施例中,沒有偏壓電漿功率被施加至基板處理區域3033。在實施例中,基板處理區域3033可稱為無電漿區而可不具有電漿。靠近基板處理區域的弱電漿被用於獲得光學放射頻譜。弱電漿導致電子與離子重組並伴隨放射用以指示存在特定原子種類的光子。因此,透過本文將要描述的各種技術,僅在視埠3071的內部形成弱電漿。視埠3071係設置在基板處理室3001的一側。使用視埠3071外側的光學放射頻譜儀來量測光學放射頻譜。藉由從弱電漿功率供應施加弱電漿功率至靠近視埠3071的一個或多個電極(未示出),來形成弱電漿。弱RF電漿功率可低於遠端RF功率。相對較低的弱RF電漿功率可避免弱本地端電漿的特性淹沒遠端電漿OES信號。弱RF電漿功率可低於遠端RF電漿功率的10%、低於8%、低於5%,或低於3%。在實施例中,弱RF電漿功率可在0.1瓦和300瓦之間、在0.2瓦和100瓦之間,或者在0.5瓦和20瓦之間。在示例性處理系統中施加至遠端電漿區域的弱RF電漿頻率,於實施例中可為低於200kHz的低RF電漿頻率、在10MHz和15MHz之間的較高RF電漿頻率,或大於1GHz的微波頻率。弱RF電漿頻率可與遠端RF頻率不同,以進一步改善光學放射頻譜的完整性。例如,弱RF電漿頻率可為60kHz,並且遠端RF頻率可為13MHz。電漿功率可電容耦合(CCP)或電感耦合(ICP)至基板電漿區域。
在實施例中,於蝕刻操作期間,基板處理區域和遠端電漿區域中的壓力可在0.01Torr和50Torr之間、在0.1Torr和15Torr之間,或在0.5Torr和10Torr之間。在實施例中,於蝕刻操作期間,圖案化基板的溫度可在-20℃和450℃之間、在0℃和350℃之間,或在5℃和200℃之間。
現在參照第4圖,第4圖為一光學放射頻譜圖。描繪了光學放射頻譜4010,其表示倂發的遠端電漿和弱本地端電漿。描繪了另一個光學放射頻譜4020,僅表示弱本地端電漿。703.7nm、712.8nm和720.2nm附近的峰值,對應於氟原子濃度。706.5nm和728.1nm附近的峰值,對應於氦原子濃度。氦氣或其他惰性氣體可使用來增益蝕刻製程,但也可用於對氟峰值進行比較和正規化。定性地說,當使用遠端電漿時,可以看到氟量測值變得更加明顯。較一般性而言,可以使用氟量測值來決定在蝕刻製程中氟濃度是否變化、是否已達到一上升平線區,或者已達到一預定設定點。
第5圖係根據實施例的與氟信號相關的蝕刻量的曲線圖。以氦信號正規化的氟信號係顯示在x軸上,而蝕刻量對應於y軸。蝕刻量(與蝕刻速率成正比)對正規化的氟信號5010的曲線圖,顯示為與偏移量大致成線性關係。線性使得正規化的氟信號能夠成為基板蝕刻速率的原位指示,而無需直接量測基板。
第6A圖和第6B圖示出根據實施例的弱電漿視埠的橫截面側視圖。第6A圖示出了基板處理區域6033,該基板處理區域6033具有固定至一側並且與基板處理室的壁形成真空密封的管狀視埠6071。第一電極6072-1和第二電極6072-2在相對側上固定至管狀視埠6071。根據實施例,本文所述的所有電極可為銅膠帶或銀膏,以利於將電極附接到各視埠。亦可使用其他黏合劑。或者,由於視埠和電極之間的機械性接觸不是形成電漿所必需的,故電極可簡單地放置在相對側上的管狀視埠6071附近。藉由在第一電極6072-1和第二電極6072-2之間施加來自弱RF電漿功率供應(未示出)的弱RF電漿功率,在管狀視埠6071的內側上形成弱電漿6034。第6B圖示出了相同配置的端視圖,其中包括弱電漿功率供應6068的視圖。光纖電纜6073係配置以將來自弱電漿6034的光輻射引導通過管狀視埠6071,並進入光學放射頻譜儀6070。
第7A圖、第7B圖和第7C圖示出根據實施例的弱電漿視埠的橫截面側視圖。第7A圖示出了基板處理區域7033,該基板處理區域7033具有固定至一側並且與基板處理室的壁形成真空密封的管狀視埠7071。電極7072-1在管狀視埠7071的外部的周圍處被固定至管狀視埠7071。根據實施例,電極7072-1可為導電膠帶塊(例如,銅)或導電膏層(例如,銀),以促進將電極7072-1附接到管狀視埠7071。由於形成弱電漿毋須依賴於管狀視埠7071和電極7072-1之間的機械性接觸,故電極7072-1可簡單為圍繞管狀視埠7071鬆散地環繞的導電環。藉由在電極7072-1與基板處理室的其餘部分或壁(顯示為基板處理區域7033的邊界)之間施加來自弱RF電漿功率供應7068-1的弱RF電漿功率,在管狀視埠7071的內側上形成弱電漿7034-1。還示出了光纖電纜7073,其係配置以將來自弱電漿7034的光輻射引導通過管狀視埠7071,並進入光學放射頻譜儀7070。第7B圖示出了相同構造的端視圖,其中包括形狀像箍的電極7072-1的視圖。第7C圖示出了在管狀視埠7071的端部上方具有電極7072-2的相關配置,並且光纖電纜7073通過管狀視埠7071的無障礙部分,從一不同角度重新定位為與弱電漿7034-2同等。弱RF電漿功率供應7068-2在電極7072-2和基板處理室的壁之間,提供弱RF電漿功率。
第8A圖和第8B圖示出根據實施例的弱電漿視埠的橫截面側視圖。第8A圖示出了基板處理區域8033,其具有固定至一側並且與基板處理室的壁形成真空密封的平面視埠8071。第一電極8072-1和第二電極8072-2被固定至平面視埠8071,而在它們之間沒有任何直接電連接。第一電極8072-1和第二電極8072-2可為放置在平面視埠8071附近或與平面視埠8071鄰接的導電膠帶塊(例如,銅)、導電膏層(例如,銀),或電極。電極(8072-1、8072-2)在實施例中不需要與平面視埠8071機械性接觸以提供形成弱電漿8034-1的能力。藉由在第一電極8072-1和第二電極8072-2之間施加來自弱RF電漿功率供應8068-1的弱RF電漿功率,在平面視埠8071的內部形成弱電漿8034-1。還示出了光纖電纜8073,光纖電纜8073係配置以將來自弱電漿8034-1的光輻射引導通過平面視埠8071,並進入光學放射頻譜儀8070。第8B圖示出了基板處理區域8033,其具有固定至一側並與基板處理室的壁形成真空密封的平面視埠8071。電極8072-3被固定至平面視埠8071。第一電極8072-1仍可為放置離平面視埠8071非常近或接觸平面視埠8071的導電膠帶塊、導電膏層,或電極。藉由在電極8072-3與基板處理室的其餘部分或顯示作為基板處理區域8033的邊界的壁之間施加來自弱RF電漿功率供應8068-2的弱RF電漿功率,在平面視埠8071內部形成弱電漿8034-1。還示出了光纖電纜8073,其係配置以將來自弱電漿8034-2的光輻射引導通過平面視埠8071,並進入光學放射頻譜儀8070。
本文所述的管狀視埠可能更易於破裂,因為管狀視埠從基板處理室延伸出。平面視埠具有能減少意外打破視埠的機會的好處。本文描述的平面視埠的厚度影響基板附近的基板處理室內的弱電漿的強度。根據實施例,平面視埠的厚度可在1mm和15mm之間、在2mm和10mm之間,或優選地在3mm和8mm之間。在實施例中,平面視埠的高度和/或寬度(從最薄尺寸的軸線觀之)可在20mm和100mm之間或在30mm和70mm之間。本文描述的所有實施例中的光纖電纜可被定位到基板的一側並恰好在基板的主平面的上方,以優先採樣最有可能參與蝕刻製程的電漿流出物部分。根據實施例,光纖電纜可朝著在基板的頂表面上方1mm和10mm之間處的水平方向(平行於基板的主平面)進行配置。
在實施例中,離子抑制器(可為噴頭)可用於為氣相蝕刻提供自由基和/或中性物質。離子抑制器亦可稱為離子抑制元件,並且可與噴頭一同配置在遠端腔室區域和基板處理區域之間。在實施例中,例如,使用離子抑制器來過濾從遠端電漿區域到基板處理區域的途中的蝕刻電漿流出物。離子抑制器可用於提供具有比離子更高的自由基濃度的反應性氣體。電漿流出物通過設置在遠端電漿區域和基板處理區域之間的離子抑制器。離子抑制器的作用是可顯著減少或基本上消除從電漿生成區域行經到基板的離子物質。本文描述的離子抑制器僅僅是在本文描述的氣相蝕刻製程期間在基板處理區域中實現低電子溫度的一種方式。
在實施例中,電子束在平行於基板的平面上通過基板處理區域,以降低電漿流出物的電子溫度。如若以這種方式施加電子束,則可以使用更簡單的噴頭。在實施例中,電子束可以作為設置在基板上方的層狀片來傳送。在實施例中,電子束提供中和負電荷之源,並提供更有效的手段以減少帶正電的離子朝向基板的流動並增加蝕刻選擇性。可以調節電漿流出物的流量和控制電子束操作的各種參數,以降低在基板處理區域中量測的電子溫度。
電子溫度可以在遠端電漿中的電漿激發期間使用Langmuir探針在基板處理區域中進行量測。在本文描述的所有無電漿區域中(特別是在基板處理區域中),電子溫度可低於0.5eV、低於0.45eV、低於0.4eV,或低於0.35eV。這些極低的電子溫度值可通過電子束、噴頭和/或離子抑制器的存在來實現。不帶電的中性和自由基物質可通過電子束和/或離子抑制器中的開口在基板處反應。與包括濺射和轟擊(bombardment)的傳統電漿蝕刻製程相比,使用自由基和其他中性物質的這種製程可減少電漿損傷。本文揭露的實施例也優於傳統的濕蝕刻製程,因傳統的濕蝕刻製程中液體的表面張力可能造成小部件的彎曲和剝落。
在本文描述的蝕刻製程期間,基板處理區域在本文中可被描述為「無電漿」區。「無電漿」並不一定意味著該區域沒有電漿。可以存在弱電漿來執行光學放射頻譜量測,但是由於在實施例中弱電漿係定位在基板處理區域的一側,所以基板正上方的區域可為無電漿。電漿區域內產生的離子化物質和自由電子,可能以極低的濃度通過分區(噴頭)中的孔隙(孔口)。遠端電漿區域(例如,遠端腔室區域和/或遠端電漿區域)中的電漿的邊界,可通過噴頭中的孔,小程度地侵入基板處理區域。此外,可在基板處理區域中產生低強度電漿,而不消除本文描述的蝕刻製程的期望特徵。在產生激發的電漿流出物期間,造成具有比遠端電漿區域低得多的強度離子密度的所有電漿,不偏離如本文所使用的「無電漿」的範圍。
本文所稱「基板」,可指其上形成或不形成有層的支撐基板。圖案化基板可為絕緣體或具有各種摻雜濃度和輪廓的半導體,例如可為在積體電路的製造中所使用的半導體基板類型。圖案化基板的暴露「氧化矽」主要是SiO2
,但可包括其他元素組分的濃度,例如氮、氫和碳。在一些實施例中,使用本文揭露的方法所蝕刻的氧化矽部分,基本上由矽和氧組成。圖案化基板的暴露「氮化矽」主要是Si3
N4
,但可包括其他元素組分的濃度,例如氧、氫和碳。在一些實施例中,本文所述的氮化矽部分基本上由矽和氮組成。一般而言,圖案化基板的第一暴露部分比第二暴露部分蝕刻得更快。第一暴露部分可具有不同於第二暴露部分的原子化學計量。在實施例中,第一暴露部分可包含不存在於第二暴露部分中的元素。類似地,根據實施例,第二暴露部分可包含不存在於第一暴露部分中的元素。
術語「前驅物」係用於指參與反應以從表面去除材料或將材料沉積到表面上的任何化學品。「電漿流出物」係描述從遠端電漿區域離開並進入遠端腔室區域和/或基板處理區域的氣體。電漿流出物處於「激發態」,係指至少一些氣體分子處於振動激發狀態、離解狀態和/或離子化狀態。「自由基前驅物」係用於描述參與反應以從表面去除材料或將材料沉積在表面上的電漿流出物(離開電漿處於激發態的氣體)。「自由基–氟前驅物」係描述含氟但可含有其他元素組分的自由基前驅物。術語「惰性氣體」,係指在蝕刻薄膜或摻雜至薄膜中時不形成化學鍵的任何氣體。示例性惰性氣體包括鈍氣,但可包括其他氣體,只要(典型地)在薄膜中捕獲痕量時不形成化學鍵。
本文已經揭露了若干實施例,而本領域技術人員將瞭解到,在不脫離所揭露的實施例的精神的情況下,可以使用各種修改、替代構造和均等物。另外,本文未描述諸多習知的製程和元件,以避免不必要地模糊本實施例。因此,以上描述不應被視為限制權利要求的範圍。
在提供數值範圍的情況下,應該理解的是除非上下文另有明確規定,在該範圍的上限和下限之間的每個居間值至其小數點第一位屬於具體揭露之範圍。所界定值之間的每一較小範圍,或所界定範圍內的任一居間值以及該界定範圍內的任一其他界定值或居間值,皆被涵蓋。這些較小範圍可獨立地包括或排除其上限和下限,並且任何較小範圍的任一上、下限或兩個上、下限,不論是被包括或排除在較小範圍內,這些較小範圍仍被涵蓋在權利要求範圍內,而係取決於所界定範圍中明確排除的上下限。在界定範圍包括一個或兩個限值的情況下,排除這些限值中的一個或兩個限值的範圍亦涵蓋在權利要求範圍內。
在本文和所附申請專利範圍中所使用的用語中,除非上下文另外明確指出,否則單數形式「一」、「一個」和「該」包括複數個所指物。因此,例如,用語「一製程」包括複數個製程,並且用語「介電材料」包括對本領域技術人員已知的一或多種介電材料及其均等物等等。
另外,在本說明書和以下的申請專利範圍中所使用的用語中,用語「包含」和「包括」旨在明確表示存在所指特徵、整體、組件或步驟,但是它們並不排除存在或添加一個或多個其他特徵、整體、組件、步驟、行為或組。
1001‧‧‧基板處理室
1010‧‧‧蝕刻劑供應系統
1014‧‧‧上板
1015‧‧‧遠端電漿區域
1016‧‧‧下板
1017‧‧‧頂板
1018‧‧‧容積
1019‧‧‧第一流體通道
1020‧‧‧絕緣環
1021‧‧‧第二流體通道
1023‧‧‧離子抑制器
1025‧‧‧噴頭
1033‧‧‧基板處理區域
1055‧‧‧基板
1065‧‧‧基板支撐件/基座
1068‧‧‧遠端電漿電源供應
1069‧‧‧偏壓電漿電源供應
1071‧‧‧視埠
2010‧‧‧流程圖
2100‧‧‧方塊
2200‧‧‧方塊
2300‧‧‧方塊
2400‧‧‧方塊
2500‧‧‧方塊
2600‧‧‧方塊
2700‧‧‧方塊
3001‧‧‧基板處理室
3010‧‧‧蝕刻劑供應系統
3015‧‧‧遠端電漿區域
3017‧‧‧頂板
3019‧‧‧通孔
3020‧‧‧絕緣環
3025‧‧‧噴頭
3033‧‧‧基板處理區域
3055‧‧‧基板
3065‧‧‧基座
3071‧‧‧視埠
4010‧‧‧光學放射頻譜
4020‧‧‧光學放射頻譜
5010‧‧‧氟信號
6033‧‧‧基板處理區域
6034‧‧‧弱電漿
6068‧‧‧弱電漿電源供應
6070‧‧‧光學放射頻譜儀
6071‧‧‧管狀視埠
6072-1‧‧‧第一電極
6072-2‧‧‧第二電極
6073‧‧‧光纖電纜
7033‧‧‧基板處理區域
7034-1‧‧‧弱電漿
7034-2‧‧‧弱電漿
7068-1‧‧‧弱RF電漿電源供應
7068-2‧‧‧弱RF電漿電源供應
7070‧‧‧光學放射頻譜儀
7071‧‧‧管狀視埠
7072-1‧‧‧電極
7072-2‧‧‧電極
7073‧‧‧光纖電纜
8033‧‧‧基板處理區域
8034-1‧‧‧弱電漿
8034-2‧‧‧弱電漿
8068-1‧‧‧弱RF電漿電源供應
8068-2‧‧‧弱RF電漿電源供應
8070‧‧‧光學放射頻譜儀
8071‧‧‧平面視埠
8072-1‧‧‧第一電極
8072-2‧‧‧第二電極
8072-3‧‧‧電極
8073‧‧‧光纖電纜
透過參考說明書和附圖的其餘部分可進一步理解本申請實施例的本質和優點。
第1圖示出根據實施例的基板處理室的示意性橫截面圖。
第2圖係根據實施例的遠端電漿蝕刻製程的流程圖。
第3A圖示出根據實施例的基板處理室的示意性橫截面圖。
第3B圖示出根據實施例的基板處理室的示意性橫截面圖。
第4圖係根據實施例的光學放射頻譜。
第5圖係根據實施例的與氟信號相關的蝕刻量的曲線圖。
第6A圖示出根據實施例的弱電漿視埠的橫截面側視圖。
第6B圖示出根據實施例的弱電漿視埠的橫截面端視圖。
第7A圖示出根據實施例的弱電漿視埠的橫截面側視圖。
第7B圖示出根據實施例的弱電漿視埠的橫截面端視圖。
第7C圖示出根據實施例的弱電漿視埠的橫截面側視圖。
第8A圖示出根據實施例的弱電漿視埠的橫截面側視圖。
第8B圖示出根據實施例的弱電漿視埠的橫截面側視圖。
在附圖中,類似的組件和/或特徵可具有相同的元件符號。此外,相同類型的各種組件可以透過在元件符號之後用破折號和區分類似組件之間的第二符號來進行區別。如若在說明書中僅使用第一元件符號,則該描述適用於具有相同第一元件符號的任何一個類似組件,而不管第二元件符號為何。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無
Claims (17)
- 一種蝕刻一基板的方法,該方法包含以下步驟: 將該基板放置在一基板處理室的一基板處理區域中;使一含氟前驅物流入一遠端電漿區域,其中一噴頭將該遠端電漿區域與該基板處理區域隔離;在該遠端電漿區域中形成具有一遠端電漿功率的一遠端電漿;從該遠端電漿區域中該遠端電漿中的該含氟前驅物產生電漿流出物;使該等電漿流出物流過該噴頭而進入該基板處理區域;以該等電漿流出物蝕刻該基板;在該基板處理區域中形成具有一本地端電漿功率的一本地端電漿;及通過固定至該基板處理室之一側的一視埠,獲取一光學放射頻譜,並形成該基板處理區域的一邊界;其中該光學放射頻譜表示基於光學波長的強度,且該光學放射頻譜係由一光學放射頻譜儀獲取。
- 如請求項1所述之方法,其中該遠端電漿的該遠端電漿功率超過該本地端電漿的該本地端電漿功率十倍或更多。
- 如請求項1所述之方法,其中該本地端電漿係居中於該基板上。
- 如請求項1所述之方法,其中該本地端電漿係佈置在該基板之上並且在該基板靠近該視埠的一邊緣之外。
- 如請求項4所述之方法,其中該本地端電漿係使用設置在該視埠的外側的一電極來形成,且該本地端電漿功率係施加在該電極與該基板處理室之間。
- 如請求項4所述之方法,其中該本地端電漿係使用一第一電極和一第二電極來形成,每一電極係設置在該視埠的外側,且該本地端電漿功率係施加在該第一電極與該第二電極之間。
- 一種基板處理室,該基板處理室包含: 一遠端電漿區域,其中該遠端電漿區域係配置以接收一含氟前驅物,且從該含氟前驅物形成一遠端電漿;一遠端電漿功率供應,係配置以將一遠端電漿功率施加至該遠端電漿區域,且係配置以形成該遠端電漿;一基板處理區域;一噴頭,設置在該遠端電漿區域與該基板處理區域之間,其中該基板處理區域係透過該噴頭中的通孔流體耦合至該遠端電漿區域;一基座,係配置以支撐一基板;一凸緣,附接到該基板處理室,其中該凸緣與該基板處理室形成一真空密封;一視埠,附接到該凸緣,該視埠與該凸緣形成一真空密封,其中該視埠在一近紅外光譜中為光學透射;及一光學放射頻譜儀,係配置以在光輻射通過該視埠之後接收該光輻射,其中該光學放射頻譜儀係設置在該視埠的一外部且該光輻射係源自該基板之上。
- 如請求項7所述之基板處理室,進一步包含一本地端電漿功率供應,該本地端電漿功率供應係配置以在該基板處理區域中形成一本地端電漿,其中該本地端電漿具有小於該遠端電漿功率的10%的一本地端電漿功率。
- 如請求項7所述之基板處理室,進一步包含一光纖電纜,該光纖電纜係配置以將來自該視埠的該光輻射引導至該光學放射頻譜儀。
- 如請求項7所述之基板處理室,進一步包含接近該視埠的一電極,其中該電極係設置在該視埠的該外部。
- 如請求項10所述之基板處理室,進一步包含一電漿功率供應,該電漿功率供應係配置以將一電漿功率施加至該電極。
- 如請求項10所述之基板處理室,進一步包含一第二電極,該第二電極係配置以將一電漿功率施加至該電極,其中該電極係與該第二電極電絕緣。
- 一種光學放射頻譜儀組件,該光學放射頻譜儀組件包含: 一凸緣,係配置以附接至一基板處理室,其中該凸緣係配置以與該基板處理室形成一真空密封;一平面視埠,附接至該凸緣,該平面視埠與該凸緣形成一真空密封,其中該平面視埠在一近紅外光譜中為光學透射;一電極,鄰近該平面視埠,其中該電極係設置在該平面視埠的一外側上;一光學放射頻譜儀,係配置以在光輻射通過該平面視埠之後接收該光輻射,其中該光學放射頻譜儀係設置在該平面視埠的該外側上;及一電漿功率供應,係配置以將一電漿功率施加至該電極。
- 如請求項13所述之光學放射頻譜儀組件,進一步包含一光纖電纜,該光纖電纜係配置以將來自該平面視埠的紅外光引導至該光學放射頻譜儀。
- 如請求項13所述之光學放射頻譜儀組件,其中該電漿功率供應係配置以在該電極與該基板處理室之間施加該電漿功率。
- 如請求項13所述之光學放射頻譜儀組件,進一步包含接近該平面視埠的一第二電極,其中該電極係與該第二電極電絕緣。
- 如請求項16所述之光學放射頻譜儀組件,其中該電漿功率供應係配置以在該電極與該第二電極之間施加該電漿功率。
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TWI773529B (zh) * | 2020-09-30 | 2022-08-01 | 日商日立全球先端科技股份有限公司 | 電漿處理裝置及電漿處理方法 |
TWI795324B (zh) * | 2020-09-30 | 2023-03-01 | 日商日立全球先端科技股份有限公司 | 電漿處理方法 |
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WO2019018019A2 (en) | 2019-01-24 |
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