JP2009540565A5 - - Google Patents

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Publication number
JP2009540565A5
JP2009540565A5 JP2009514271A JP2009514271A JP2009540565A5 JP 2009540565 A5 JP2009540565 A5 JP 2009540565A5 JP 2009514271 A JP2009514271 A JP 2009514271A JP 2009514271 A JP2009514271 A JP 2009514271A JP 2009540565 A5 JP2009540565 A5 JP 2009540565A5
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epitaxial
silicon
semiconductor
depositing
blanket
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JP2009514271A
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JP2009540565A (ja
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Priority claimed from US11/536,463 external-priority patent/US8278176B2/en
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JP2009514271A 2006-06-07 2007-05-11 半導体膜の選択的なエピタキシャル形成 Pending JP2009540565A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US81170306P 2006-06-07 2006-06-07
US11/536,463 US8278176B2 (en) 2006-06-07 2006-09-28 Selective epitaxial formation of semiconductor films
PCT/US2007/011464 WO2007145758A2 (en) 2006-06-07 2007-05-11 Selective epitaxial formation of semiconductor films

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JP2009540565A JP2009540565A (ja) 2009-11-19
JP2009540565A5 true JP2009540565A5 (enExample) 2010-05-27

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JP2009514271A Pending JP2009540565A (ja) 2006-06-07 2007-05-11 半導体膜の選択的なエピタキシャル形成

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US (2) US8278176B2 (enExample)
EP (1) EP2022083A2 (enExample)
JP (1) JP2009540565A (enExample)
KR (2) KR101544931B1 (enExample)
CN (1) CN101454874B (enExample)
TW (1) TWI404123B (enExample)
WO (1) WO2007145758A2 (enExample)

Families Citing this family (503)

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