JP2006182781A5 - - Google Patents

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Publication number
JP2006182781A5
JP2006182781A5 JP2005368548A JP2005368548A JP2006182781A5 JP 2006182781 A5 JP2006182781 A5 JP 2006182781A5 JP 2005368548 A JP2005368548 A JP 2005368548A JP 2005368548 A JP2005368548 A JP 2005368548A JP 2006182781 A5 JP2006182781 A5 JP 2006182781A5
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JP
Japan
Prior art keywords
precursor
nitrogen
silicon
germanium
deposition
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JP2005368548A
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English (en)
Japanese (ja)
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JP5148063B2 (ja
JP2006182781A (ja
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Priority claimed from KR1020040112899A external-priority patent/KR100640620B1/ko
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Publication of JP2006182781A publication Critical patent/JP2006182781A/ja
Publication of JP2006182781A5 publication Critical patent/JP2006182781A5/ja
Application granted granted Critical
Publication of JP5148063B2 publication Critical patent/JP5148063B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2005368548A 2004-12-27 2005-12-21 ゲルマニウム前駆体、これを利用して形成されたｇｓｔ薄膜、前記薄膜の製造方法及び相変化メモリ素子 Expired - Lifetime JP5148063B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2004-0112899 2004-12-27
KR1020040112899A KR100640620B1 (ko) 2004-12-27 2004-12-27 트윈비트 셀 구조의 ｎｏｒ형 플래쉬 메모리 소자 및 그제조 방법

Publications (3)

Publication Number Publication Date
JP2006182781A JP2006182781A (ja) 2006-07-13
JP2006182781A5 true JP2006182781A5 (enExample) 2009-01-22
JP5148063B2 JP5148063B2 (ja) 2013-02-20

Family

ID=36612241

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2005368548A Expired - Lifetime JP5148063B2 (ja) 2004-12-27 2005-12-21 ゲルマニウム前駆体、これを利用して形成されたｇｓｔ薄膜、前記薄膜の製造方法及び相変化メモリ素子
JP2005376044A Pending JP2006186378A (ja) 2004-12-27 2005-12-27 ツインビットセル構造のｎｏｒ型フラッシュメモリ素子及びその製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2005376044A Pending JP2006186378A (ja) 2004-12-27 2005-12-27 ツインビットセル構造のｎｏｒ型フラッシュメモリ素子及びその製造方法

Country Status (3)

Country Link
US (2) US20060141710A1 (enExample)
JP (2) JP5148063B2 (enExample)
KR (1) KR100640620B1 (enExample)

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US7888165B2 (en) 2008-08-14 2011-02-15 Micron Technology, Inc. Methods of forming a phase change material
KR101445333B1 (ko) * 2008-08-29 2014-10-01 삼성전자주식회사 가변저항 메모리 장치의 형성방법
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US8158844B2 (en) * 2008-10-08 2012-04-17 Kci Licensing, Inc. Limited-access, reduced-pressure systems and methods
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US20110124182A1 (en) * 2009-11-20 2011-05-26 Advanced Techology Materials, Inc. System for the delivery of germanium-based precursor
WO2011119175A1 (en) 2010-03-26 2011-09-29 Advanced Technology Materials, Inc. Germanium antimony telluride materials and devices incorporating same
US20110254085A1 (en) 2010-04-16 2011-10-20 Hynix Semiconductor Inc. Semiconductor integrated circuit device having reduced unit cell area and method for manufacturing the same
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KR20180104195A (ko) 2011-12-22 2018-09-19 인텔 코포레이션 반도체 구조
KR102117124B1 (ko) 2012-04-30 2020-05-29 엔테그리스, 아이엔씨. 유전체 물질로 중심-충전된 상 변화 합금을 포함하는 상 변화 메모리 구조체
WO2014070682A1 (en) 2012-10-30 2014-05-08 Advaned Technology Materials, Inc. Double self-aligned phase change memory device structure
US9214630B2 (en) * 2013-04-11 2015-12-15 Air Products And Chemicals, Inc. Method of making a multicomponent film
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