KR100640620B1 - 트윈비트 셀 구조의 ｎｏｒ형 플래쉬 메모리 소자 및 그제조 방법 - Google Patents

트윈비트 셀 구조의 ｎｏｒ형 플래쉬 메모리 소자 및 그제조 방법 Download PDF

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KR100640620B1
KR100640620B1 KR1020040112899A KR20040112899A KR100640620B1 KR 100640620 B1 KR100640620 B1 KR 100640620B1 KR 1020040112899 A KR1020040112899 A KR 1020040112899A KR 20040112899 A KR20040112899 A KR 20040112899A KR 100640620 B1 KR100640620 B1 KR 100640620B1
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South Korea
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active region
source
gate
oxide film
memory cell
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Korean (ko)
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KR20060074231A (ko
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윤재만
성석강
박동건
이충호
김태용
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삼성전자주식회사
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Priority to KR1020040112899A priority Critical patent/KR100640620B1/ko
Priority to US11/311,367 priority patent/US20060141710A1/en
Priority to JP2005368548A priority patent/JP5148063B2/ja
Priority to JP2005376044A priority patent/JP2006186378A/ja
Publication of KR20060074231A publication Critical patent/KR20060074231A/ko
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Publication of KR100640620B1 publication Critical patent/KR100640620B1/ko
Priority to US12/418,639 priority patent/US20090191681A1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H10D30/6211—Fin field-effect transistors [FinFET] having fin-shaped semiconductor bodies integral with the bulk semiconductor substrates

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  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020040112899A 2004-12-27 2004-12-27 트윈비트 셀 구조의 ｎｏｒ형 플래쉬 메모리 소자 및 그제조 방법 Expired - Fee Related KR100640620B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020040112899A KR100640620B1 (ko) 2004-12-27 2004-12-27 트윈비트 셀 구조의 ｎｏｒ형 플래쉬 메모리 소자 및 그제조 방법
US11/311,367 US20060141710A1 (en) 2004-12-27 2005-12-20 NOR-type flash memory device of twin bit cell structure and method of fabricating the same
JP2005368548A JP5148063B2 (ja) 2004-12-27 2005-12-21 ゲルマニウム前駆体、これを利用して形成されたｇｓｔ薄膜、前記薄膜の製造方法及び相変化メモリ素子
JP2005376044A JP2006186378A (ja) 2004-12-27 2005-12-27 ツインビットセル構造のｎｏｒ型フラッシュメモリ素子及びその製造方法
US12/418,639 US20090191681A1 (en) 2004-12-27 2009-04-06 Nor-type flash memory device with twin bit cell structure and method of fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020040112899A KR100640620B1 (ko) 2004-12-27 2004-12-27 트윈비트 셀 구조의 ｎｏｒ형 플래쉬 메모리 소자 및 그제조 방법

Publications (2)

Publication Number Publication Date
KR20060074231A KR20060074231A (ko) 2006-07-03
KR100640620B1 true KR100640620B1 (ko) 2006-11-02

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US (2) US20060141710A1 (enExample)
JP (2) JP5148063B2 (enExample)
KR (1) KR100640620B1 (enExample)

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Also Published As

Publication number Publication date
US20060141710A1 (en) 2006-06-29
JP2006186378A (ja) 2006-07-13
US20090191681A1 (en) 2009-07-30
JP5148063B2 (ja) 2013-02-20
JP2006182781A (ja) 2006-07-13
KR20060074231A (ko) 2006-07-03

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