JP5148063B2 - ゲルマニウム前駆体、これを利用して形成されたｇｓｔ薄膜、前記薄膜の製造方法及び相変化メモリ素子 - Google Patents

ゲルマニウム前駆体、これを利用して形成されたｇｓｔ薄膜、前記薄膜の製造方法及び相変化メモリ素子 Download PDF

Info

Publication number
JP5148063B2
JP5148063B2 JP2005368548A JP2005368548A JP5148063B2 JP 5148063 B2 JP5148063 B2 JP 5148063B2 JP 2005368548 A JP2005368548 A JP 2005368548A JP 2005368548 A JP2005368548 A JP 2005368548A JP 5148063 B2 JP5148063 B2 JP 5148063B2
Authority
JP
Japan
Prior art keywords
precursor
phase change
thin film
deposition
gst
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2005368548A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006182781A (ja
JP2006182781A5 (enExample
Inventor
範錫 徐
正賢 李
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2006182781A publication Critical patent/JP2006182781A/ja
Publication of JP2006182781A5 publication Critical patent/JP2006182781A5/ja
Application granted granted Critical
Publication of JP5148063B2 publication Critical patent/JP5148063B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H10D30/6211—Fin field-effect transistors [FinFET] having fin-shaped semiconductor bodies integral with the bulk semiconductor substrates

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Chemical Vapour Deposition (AREA)
JP2005368548A 2004-12-27 2005-12-21 ゲルマニウム前駆体、これを利用して形成されたｇｓｔ薄膜、前記薄膜の製造方法及び相変化メモリ素子 Expired - Lifetime JP5148063B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2004-0112899 2004-12-27
KR1020040112899A KR100640620B1 (ko) 2004-12-27 2004-12-27 트윈비트 셀 구조의 ｎｏｒ형 플래쉬 메모리 소자 및 그제조 방법

Publications (3)

Publication Number Publication Date
JP2006182781A JP2006182781A (ja) 2006-07-13
JP2006182781A5 JP2006182781A5 (enExample) 2009-01-22
JP5148063B2 true JP5148063B2 (ja) 2013-02-20

Family

ID=36612241

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2005368548A Expired - Lifetime JP5148063B2 (ja) 2004-12-27 2005-12-21 ゲルマニウム前駆体、これを利用して形成されたｇｓｔ薄膜、前記薄膜の製造方法及び相変化メモリ素子
JP2005376044A Pending JP2006186378A (ja) 2004-12-27 2005-12-27 ツインビットセル構造のｎｏｒ型フラッシュメモリ素子及びその製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2005376044A Pending JP2006186378A (ja) 2004-12-27 2005-12-27 ツインビットセル構造のｎｏｒ型フラッシュメモリ素子及びその製造方法

Country Status (3)

Country Link
US (2) US20060141710A1 (enExample)
JP (2) JP5148063B2 (enExample)
KR (1) KR100640620B1 (enExample)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101128711B1 (ko) * 2005-04-29 2012-03-23 매그나칩 반도체 유한회사 노아형 플래시 메모리 소자
US8288198B2 (en) 2006-05-12 2012-10-16 Advanced Technology Materials, Inc. Low temperature deposition of phase change memory materials
KR101282404B1 (ko) * 2006-09-05 2013-07-04 삼성디스플레이 주식회사 액정 표시 장치의 제조 방법
JP2008078404A (ja) 2006-09-21 2008-04-03 Toshiba Corp 半導体メモリ及びその製造方法
KR100757323B1 (ko) * 2006-09-29 2007-09-11 삼성전자주식회사 전하 트랩형 비휘발성 메모리 장치 및 그 제조 방법
KR100762262B1 (ko) * 2006-10-23 2007-10-01 삼성전자주식회사 비휘발성 메모리 소자 및 그 형성방법
JP5320295B2 (ja) 2006-11-02 2013-10-23 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 金属薄膜のｃｖｄ／ａｌｄに有用なアンチモンおよびゲルマニウム錯体
KR100888617B1 (ko) * 2007-06-15 2009-03-17 삼성전자주식회사 상변화 메모리 장치 및 그 형성 방법
KR100871547B1 (ko) * 2007-08-14 2008-12-01 주식회사 동부하이텍 노어 플래시 메모리 소자 및 그 제조 방법
KR100946146B1 (ko) * 2007-09-10 2010-03-10 주식회사 하이닉스반도체 플래시 메모리 소자 및 그 제조 방법
US7960205B2 (en) * 2007-11-27 2011-06-14 Air Products And Chemicals, Inc. Tellurium precursors for GST films in an ALD or CVD process
US7718990B2 (en) * 2007-12-04 2010-05-18 Ovonyx, Inc. Active material devices with containment layer
US8318252B2 (en) * 2008-01-28 2012-11-27 Air Products And Chemicals, Inc. Antimony precursors for GST films in ALD/CVD processes
US20090215225A1 (en) 2008-02-24 2009-08-27 Advanced Technology Materials, Inc. Tellurium compounds useful for deposition of tellurium containing materials
WO2009134989A2 (en) 2008-05-02 2009-11-05 Advanced Technology Materials, Inc. Antimony compounds useful for deposition of antimony-containing materials
US20110180905A1 (en) * 2008-06-10 2011-07-28 Advanced Technology Materials, Inc. GeSbTe MATERIAL INCLUDING SUPERFLOW LAYER(S), AND USE OF Ge TO PREVENT INTERACTION OF Te FROM SbXTeY AND GeXTeY RESULTING IN HIGH Te CONTENT AND FILM CRYSTALLINITY
US7888165B2 (en) 2008-08-14 2011-02-15 Micron Technology, Inc. Methods of forming a phase change material
KR101445333B1 (ko) * 2008-08-29 2014-10-01 삼성전자주식회사 가변저항 메모리 장치의 형성방법
US7834342B2 (en) 2008-09-04 2010-11-16 Micron Technology, Inc. Phase change material and methods of forming the phase change material
US8158844B2 (en) * 2008-10-08 2012-04-17 Kci Licensing, Inc. Limited-access, reduced-pressure systems and methods
KR101518332B1 (ko) 2008-12-01 2015-05-08 삼성전자주식회사 반도체 장치 제조 방법
US8003521B2 (en) 2009-04-07 2011-08-23 Micron Technology, Inc. Semiconductor processing
TW201247589A (en) 2009-05-22 2012-12-01 Advanced Tech Materials Low temperature GST process
US20110124182A1 (en) * 2009-11-20 2011-05-26 Advanced Techology Materials, Inc. System for the delivery of germanium-based precursor
WO2011119175A1 (en) 2010-03-26 2011-09-29 Advanced Technology Materials, Inc. Germanium antimony telluride materials and devices incorporating same
US20110254085A1 (en) 2010-04-16 2011-10-20 Hynix Semiconductor Inc. Semiconductor integrated circuit device having reduced unit cell area and method for manufacturing the same
WO2011146913A2 (en) 2010-05-21 2011-11-24 Advanced Technology Materials, Inc. Germanium antimony telluride materials and devices incorporating same
KR20180104195A (ko) 2011-12-22 2018-09-19 인텔 코포레이션 반도체 구조
KR102117124B1 (ko) 2012-04-30 2020-05-29 엔테그리스, 아이엔씨. 유전체 물질로 중심-충전된 상 변화 합금을 포함하는 상 변화 메모리 구조체
WO2014070682A1 (en) 2012-10-30 2014-05-08 Advaned Technology Materials, Inc. Double self-aligned phase change memory device structure
US9214630B2 (en) * 2013-04-11 2015-12-15 Air Products And Chemicals, Inc. Method of making a multicomponent film
JP5733864B2 (ja) * 2013-10-09 2015-06-10 ラピスセミコンダクタ株式会社 半導体装置
KR101659610B1 (ko) * 2014-03-18 2016-09-23 주식회사 유진테크 머티리얼즈 유기 게르마늄 아민 화합물 및 이를 이용한 박막 증착 방법
JP6306386B2 (ja) * 2014-03-20 2018-04-04 株式会社日立国際電気 基板処理方法、基板処理装置およびプログラム
KR102165263B1 (ko) 2014-06-20 2020-10-13 삼성전자 주식회사 Ｍｏｓｆｅｔ 소자들의 레이아웃들 및 수직 구조들
US9418896B2 (en) * 2014-11-12 2016-08-16 Samsung Electronics Co., Ltd. Semiconductor device and fabricating method thereof
US9983811B2 (en) * 2016-05-25 2018-05-29 Seagate Technology Llc Save critical data upon power loss
US11069773B2 (en) * 2018-11-26 2021-07-20 Taiwan Semiconductor Manufacturing Co., Ltd. Contact-to-gate monitor pattern and fabrication thereof
CN118102718A (zh) * 2024-02-18 2024-05-28 华虹半导体(无锡)有限公司 Nor闪存及其阵列结构、制造方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19600307C1 (de) * 1996-01-05 1998-01-08 Siemens Ag Hochintegrierter Halbleiterspeicher und Verfahren zur Herstellung des Halbleiterspeichers
JPH10112531A (ja) * 1996-08-13 1998-04-28 Hitachi Ltd 半導体集積回路装置の製造方法
TW340958B (en) * 1997-02-25 1998-09-21 Winbond Electronics Corp The producing method for self-aligned isolating gate flash memory unit
KR100242723B1 (ko) * 1997-08-12 2000-02-01 윤종용 불휘발성 반도체 메모리 장치의 셀 어레이 구조 및 그 제조방법
KR100278661B1 (ko) * 1998-11-13 2001-02-01 윤종용 비휘발성 메모리소자 및 그 제조방법
US6133098A (en) * 1999-05-17 2000-10-17 Halo Lsi Design & Device Technology, Inc. Process for making and programming and operating a dual-bit multi-level ballistic flash memory
JP4834897B2 (ja) * 2000-05-02 2011-12-14 ソニー株式会社 不揮発性半導体記憶装置およびその動作方法
JP2002100689A (ja) * 2000-09-22 2002-04-05 Toshiba Corp 不揮発性半導体記憶装置
JP5290488B2 (ja) * 2000-09-28 2013-09-18 プレジデント アンド フェロウズ オブ ハーバード カレッジ 酸化物、ケイ酸塩及びリン酸塩の気相成長
US6674138B1 (en) * 2001-12-31 2004-01-06 Advanced Micro Devices, Inc. Use of high-k dielectric materials in modified ONO structure for semiconductor devices
JP2003224213A (ja) * 2002-01-30 2003-08-08 Mitsubishi Electric Corp 不揮発性半導体記憶装置
US6642573B1 (en) * 2002-03-13 2003-11-04 Advanced Micro Devices, Inc. Use of high-K dielectric material in modified ONO structure for semiconductor devices
US6570211B1 (en) * 2002-06-26 2003-05-27 Advanced Micro Devices, Inc. 2Bit/cell architecture for floating gate flash memory product and associated method
DE10241171A1 (de) * 2002-09-05 2004-03-18 Infineon Technologies Ag Wort- und Bitleitungsanordnung für einen FINFET-Halbleiterspeicher
JP2004349352A (ja) * 2003-05-20 2004-12-09 Sharp Corp 半導体記憶装置およびその動作方法、半導体装置ならびに携帯電子機器
JP2005064217A (ja) * 2003-08-12 2005-03-10 Genusion:Kk 不揮発性半導体記憶装置の消去方法
US6878991B1 (en) * 2004-01-30 2005-04-12 Micron Technology, Inc. Vertical device 4F2 EEPROM memory
KR20050091488A (ko) * 2004-03-12 2005-09-15 주식회사 유피케미칼 세라믹 또는 금속박막 증착용 전구체 화합물 및 그제조방법
KR100652378B1 (ko) * 2004-09-08 2006-12-01 삼성전자주식회사 안티몬 프리커서 및 이를 이용한 상변화 메모리 소자의 제조방법

Also Published As

Publication number Publication date
US20060141710A1 (en) 2006-06-29
JP2006186378A (ja) 2006-07-13
US20090191681A1 (en) 2009-07-30
JP2006182781A (ja) 2006-07-13
KR100640620B1 (ko) 2006-11-02
KR20060074231A (ko) 2006-07-03

Similar Documents

Publication Publication Date Title
JP5148063B2 (ja) ゲルマニウム前駆体、これを利用して形成されたｇｓｔ薄膜、前記薄膜の製造方法及び相変化メモリ素子
KR100618879B1 (ko) 게르마늄 전구체, 이를 이용하여 형성된 ｇｓｔ 박막,상기 박막의 제조 방법 및 상변화 메모리 소자
KR100688532B1 (ko) 텔루르 전구체, 이를 이용하여 제조된 Ｔｅ-함유 칼코게나이드(ｃｈａｌｃｏｇｅｎｉｄｅ) 박막, 상기 박막의 제조방법 및 상변화 메모리 소자
CN100585899C (zh) 锑前体、使用该锑前体的相变存储器件及其制造方法
US8765223B2 (en) Binary and ternary metal chalcogenide materials and method of making and using same
US7569417B2 (en) Method of forming a phase changeable material layer, a method of manufacturing a phase changeable memory unit, and a method of manufacturing a phase changeable semiconductor memory device
TWI481739B (zh) 碲與硒薄膜之原子層沈積用的前驅物的合成與用途
KR100757415B1 (ko) 게르마늄 화합물 및 그 제조 방법, 상기 게르마늄 화합물을이용한 상변화 메모리 장치 및 그 형성 방법
KR100585175B1 (ko) 화학 기상 증착법에 의한 ＧｅＳｂＴｅ 박막의 제조방법
US10580978B2 (en) Current compliance layers and memory arrays comprising thereof
JP2006182781A5 (enExample)
TWI731109B (zh) 鋁化合物、使用其形成薄膜之方法與製造積體電路元件之方法
TW201250041A (en) Binary and ternary metal chalcogenide materials and method of making and using same
KR20080041460A (ko) 저온 증착용 금속 전구체, 그를 사용한 금속 박막 형성방법 및 상변화 메모리 소자 제조 방법
KR101952729B1 (ko) 원자층 증착을 이용한 칼코겐-함유 막의 제조 방법
WO2012138615A2 (en) Oxic germanium-antimony-tellurium material and phase change memory comprising same
KR102529139B1 (ko) 원자층 증착 공정을 이용한 칼코게나이드계 박막의 형성 방법, 이를 적용한 상변화 물질층의 형성 방법 및 상변화 메모리 소자의 제조 방법
EP2444407A1 (en) Metal compounds for deposition of chalcogenide films at low temperature
TWI434352B (zh) 電阻式記憶體結晶二極體製造方法
KR20060097870A (ko) 상변화 기억소자 제조방법

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081202

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20081202

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20111220

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120124

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20120424

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20120427

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120510

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20121030

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20121128

R150 Certificate of patent or registration of utility model

Ref document number: 5148063

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20151207

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250