JP2005537645A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2005537645A5 JP2005537645A5 JP2004531945A JP2004531945A JP2005537645A5 JP 2005537645 A5 JP2005537645 A5 JP 2005537645A5 JP 2004531945 A JP2004531945 A JP 2004531945A JP 2004531945 A JP2004531945 A JP 2004531945A JP 2005537645 A5 JP2005537645 A5 JP 2005537645A5
- Authority
- JP
- Japan
- Prior art keywords
- precursor compound
- substrate
- metal
- formula
- hafnium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims 43
- 239000000758 substrate Substances 0.000 claims 42
- 150000001875 compounds Chemical class 0.000 claims 37
- 239000002243 precursor Substances 0.000 claims 28
- 229910052751 metal Inorganic materials 0.000 claims 18
- 239000002184 metal Substances 0.000 claims 18
- 239000004065 semiconductor Substances 0.000 claims 17
- 229910052735 hafnium Chemical group 0.000 claims 12
- 238000000151 deposition Methods 0.000 claims 10
- 230000008021 deposition Effects 0.000 claims 10
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical group [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 10
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical group [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 9
- 230000008016 vaporization Effects 0.000 claims 9
- 229910052726 zirconium Inorganic materials 0.000 claims 9
- 125000000962 organic group Chemical group 0.000 claims 8
- 239000012686 silicon precursor Substances 0.000 claims 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 7
- 238000004519 manufacturing process Methods 0.000 claims 6
- 238000007740 vapor deposition Methods 0.000 claims 6
- 238000000231 atomic layer deposition Methods 0.000 claims 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims 5
- 238000005229 chemical vapour deposition Methods 0.000 claims 4
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 3
- 229910044991 metal oxide Inorganic materials 0.000 claims 3
- 150000004706 metal oxides Chemical class 0.000 claims 3
- 229910052914 metal silicate Inorganic materials 0.000 claims 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 3
- 229920005591 polysilicon Polymers 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 230000004888 barrier function Effects 0.000 claims 2
- 239000012159 carrier gas Substances 0.000 claims 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims 2
- 229910000449 hafnium oxide Inorganic materials 0.000 claims 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims 2
- 239000006104 solid solution Substances 0.000 claims 2
- 229910001928 zirconium oxide Inorganic materials 0.000 claims 2
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 claims 2
- 125000004209 (C1-C8) alkyl group Chemical group 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims 1
- 238000000137 annealing Methods 0.000 claims 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims 1
- 239000003990 capacitor Substances 0.000 claims 1
- 230000005669 field effect Effects 0.000 claims 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- ZUEKXCXHTXJYAR-UHFFFAOYSA-N tetrapropan-2-yl silicate Chemical compound CC(C)O[Si](OC(C)C)(OC(C)C)OC(C)C ZUEKXCXHTXJYAR-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/229,779 US7112485B2 (en) | 2002-08-28 | 2002-08-28 | Systems and methods for forming zirconium and/or hafnium-containing layers |
| PCT/US2003/027152 WO2004020691A2 (en) | 2002-08-28 | 2003-08-27 | Systems and methods for forming zirconium and/or hafnium-containing layers |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005537645A JP2005537645A (ja) | 2005-12-08 |
| JP2005537645A5 true JP2005537645A5 (enExample) | 2006-10-26 |
Family
ID=31976314
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004531945A Pending JP2005537645A (ja) | 2002-08-28 | 2003-08-27 | ジルコニウムおよび／またはハフニウム含有層を形成するシステムおよび方法 |
Country Status (10)
| Country | Link |
|---|---|
| US (2) | US7112485B2 (enExample) |
| EP (1) | EP1532290B1 (enExample) |
| JP (1) | JP2005537645A (enExample) |
| KR (2) | KR20100072378A (enExample) |
| CN (2) | CN1937253A (enExample) |
| AT (1) | ATE418627T1 (enExample) |
| AU (1) | AU2003272249A1 (enExample) |
| DE (1) | DE60325484D1 (enExample) |
| TW (1) | TWI249587B (enExample) |
| WO (1) | WO2004020691A2 (enExample) |
Families Citing this family (100)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6620723B1 (en) * | 2000-06-27 | 2003-09-16 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
| JP5290488B2 (ja) | 2000-09-28 | 2013-09-18 | プレジデント アンド フェロウズ オブ ハーバード カレッジ | 酸化物、ケイ酸塩及びリン酸塩の気相成長 |
| US6846516B2 (en) * | 2002-04-08 | 2005-01-25 | Applied Materials, Inc. | Multiple precursor cyclical deposition system |
| US20030235961A1 (en) * | 2002-04-17 | 2003-12-25 | Applied Materials, Inc. | Cyclical sequential deposition of multicomponent films |
| US7160577B2 (en) | 2002-05-02 | 2007-01-09 | Micron Technology, Inc. | Methods for atomic-layer deposition of aluminum oxides in integrated circuits |
| US7067439B2 (en) * | 2002-06-14 | 2006-06-27 | Applied Materials, Inc. | ALD metal oxide deposition process using direct oxidation |
| US6858547B2 (en) * | 2002-06-14 | 2005-02-22 | Applied Materials, Inc. | System and method for forming a gate dielectric |
| US20030232501A1 (en) * | 2002-06-14 | 2003-12-18 | Kher Shreyas S. | Surface pre-treatment for enhancement of nucleation of high dielectric constant materials |
| US6921702B2 (en) * | 2002-07-30 | 2005-07-26 | Micron Technology Inc. | Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics |
| US6958300B2 (en) | 2002-08-28 | 2005-10-25 | Micron Technology, Inc. | Systems and methods for forming metal oxides using metal organo-amines and metal organo-oxides |
| US7112485B2 (en) | 2002-08-28 | 2006-09-26 | Micron Technology, Inc. | Systems and methods for forming zirconium and/or hafnium-containing layers |
| US7041609B2 (en) * | 2002-08-28 | 2006-05-09 | Micron Technology, Inc. | Systems and methods for forming metal oxides using alcohols |
| US7101813B2 (en) | 2002-12-04 | 2006-09-05 | Micron Technology Inc. | Atomic layer deposited Zr-Sn-Ti-O films |
| US6958302B2 (en) * | 2002-12-04 | 2005-10-25 | Micron Technology, Inc. | Atomic layer deposited Zr-Sn-Ti-O films using TiI4 |
| US7713592B2 (en) * | 2003-02-04 | 2010-05-11 | Tegal Corporation | Nanolayer deposition process |
| US7135369B2 (en) | 2003-03-31 | 2006-11-14 | Micron Technology, Inc. | Atomic layer deposited ZrAlxOy dielectric layers including Zr4AlO9 |
| US20040198069A1 (en) * | 2003-04-04 | 2004-10-07 | Applied Materials, Inc. | Method for hafnium nitride deposition |
| US7390535B2 (en) | 2003-07-03 | 2008-06-24 | Aeromet Technologies, Inc. | Simple chemical vapor deposition system and methods for depositing multiple-metal aluminide coatings |
| JP3956225B2 (ja) * | 2003-08-26 | 2007-08-08 | 株式会社トリケミカル研究所 | 膜形成方法 |
| US7314812B2 (en) | 2003-08-28 | 2008-01-01 | Micron Technology, Inc. | Method for reducing the effective thickness of gate oxides by nitrogen implantation and anneal |
| US6989573B2 (en) * | 2003-10-10 | 2006-01-24 | Micron Technology, Inc. | Lanthanide oxide/zirconium oxide atomic layer deposited nanolaminate gate dielectrics |
| US20050153571A1 (en) * | 2003-11-17 | 2005-07-14 | Yoshihide Senzaki | Nitridation of high-k dielectric films |
| KR100639673B1 (ko) * | 2003-12-22 | 2006-10-30 | 삼성전자주식회사 | 고유전 합금으로 이루어지는 게이트 유전막을 구비하는반도체 소자 및 그 제조 방법 |
| CN100447962C (zh) * | 2004-01-21 | 2008-12-31 | 株式会社日立国际电气 | 半导体装置的制造方法及衬底处理装置 |
| US20050252449A1 (en) * | 2004-05-12 | 2005-11-17 | Nguyen Son T | Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system |
| US8119210B2 (en) | 2004-05-21 | 2012-02-21 | Applied Materials, Inc. | Formation of a silicon oxynitride layer on a high-k dielectric material |
| US8323754B2 (en) * | 2004-05-21 | 2012-12-04 | Applied Materials, Inc. | Stabilization of high-k dielectric materials |
| US20060019033A1 (en) * | 2004-05-21 | 2006-01-26 | Applied Materials, Inc. | Plasma treatment of hafnium-containing materials |
| US20060062917A1 (en) * | 2004-05-21 | 2006-03-23 | Shankar Muthukrishnan | Vapor deposition of hafnium silicate materials with tris(dimethylamino)silane |
| US6852588B1 (en) * | 2004-06-30 | 2005-02-08 | Freescale Semiconductor, Inc. | Methods of fabricating semiconductor structures comprising epitaxial Hf3Si2 layers |
| US7601649B2 (en) * | 2004-08-02 | 2009-10-13 | Micron Technology, Inc. | Zirconium-doped tantalum oxide films |
| US7588988B2 (en) | 2004-08-31 | 2009-09-15 | Micron Technology, Inc. | Method of forming apparatus having oxide films formed using atomic layer deposition |
| US7494939B2 (en) | 2004-08-31 | 2009-02-24 | Micron Technology, Inc. | Methods for forming a lanthanum-metal oxide dielectric layer |
| KR100647484B1 (ko) * | 2004-11-23 | 2006-11-23 | 삼성전자주식회사 | 박막 제조 방법 및 이를 이용한 게이트 구조물,커패시터와 플래시 메모리 장치의 제조 방법 |
| US7235501B2 (en) | 2004-12-13 | 2007-06-26 | Micron Technology, Inc. | Lanthanum hafnium oxide dielectrics |
| US7560395B2 (en) * | 2005-01-05 | 2009-07-14 | Micron Technology, Inc. | Atomic layer deposited hafnium tantalum oxide dielectrics |
| US7422983B2 (en) | 2005-02-24 | 2008-09-09 | International Business Machines Corporation | Ta-TaN selective removal process for integrated device fabrication |
| JP2006279019A (ja) * | 2005-03-03 | 2006-10-12 | Sony Corp | 薄膜の形成方法および半導体装置の製造方法 |
| US7687409B2 (en) | 2005-03-29 | 2010-03-30 | Micron Technology, Inc. | Atomic layer deposited titanium silicon oxide films |
| JP4522900B2 (ja) * | 2005-03-30 | 2010-08-11 | 東京エレクトロン株式会社 | 成膜方法および記録媒体 |
| US7662729B2 (en) | 2005-04-28 | 2010-02-16 | Micron Technology, Inc. | Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer |
| US7390756B2 (en) * | 2005-04-28 | 2008-06-24 | Micron Technology, Inc. | Atomic layer deposited zirconium silicon oxide films |
| JP4711733B2 (ja) * | 2005-05-12 | 2011-06-29 | 株式会社Adeka | 酸化珪素系薄膜の製造方法 |
| US7572695B2 (en) | 2005-05-27 | 2009-08-11 | Micron Technology, Inc. | Hafnium titanium oxide films |
| US7510983B2 (en) | 2005-06-14 | 2009-03-31 | Micron Technology, Inc. | Iridium/zirconium oxide structure |
| US20070049043A1 (en) * | 2005-08-23 | 2007-03-01 | Applied Materials, Inc. | Nitrogen profile engineering in HI-K nitridation for device performance enhancement and reliability improvement |
| US7402534B2 (en) * | 2005-08-26 | 2008-07-22 | Applied Materials, Inc. | Pretreatment processes within a batch ALD reactor |
| US20070049023A1 (en) * | 2005-08-29 | 2007-03-01 | Micron Technology, Inc. | Zirconium-doped gadolinium oxide films |
| US7393736B2 (en) * | 2005-08-29 | 2008-07-01 | Micron Technology, Inc. | Atomic layer deposition of Zrx Hfy Sn1-x-y O2 films as high k gate dielectrics |
| KR100718839B1 (ko) * | 2005-08-31 | 2007-05-16 | 삼성전자주식회사 | 박막 제조 방법 및 이를 이용한 커패시터의 제조 방법 |
| US7410910B2 (en) | 2005-08-31 | 2008-08-12 | Micron Technology, Inc. | Lanthanum aluminum oxynitride dielectric films |
| US7615438B2 (en) | 2005-12-08 | 2009-11-10 | Micron Technology, Inc. | Lanthanide yttrium aluminum oxide dielectric films |
| US7592251B2 (en) * | 2005-12-08 | 2009-09-22 | Micron Technology, Inc. | Hafnium tantalum titanium oxide films |
| US7972974B2 (en) | 2006-01-10 | 2011-07-05 | Micron Technology, Inc. | Gallium lanthanide oxide films |
| US7709402B2 (en) | 2006-02-16 | 2010-05-04 | Micron Technology, Inc. | Conductive layers for hafnium silicon oxynitride films |
| US7964514B2 (en) * | 2006-03-02 | 2011-06-21 | Applied Materials, Inc. | Multiple nitrogen plasma treatments for thin SiON dielectrics |
| US7582161B2 (en) * | 2006-04-07 | 2009-09-01 | Micron Technology, Inc. | Atomic layer deposited titanium-doped indium oxide films |
| US7798096B2 (en) | 2006-05-05 | 2010-09-21 | Applied Materials, Inc. | Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool |
| WO2007140813A1 (en) * | 2006-06-02 | 2007-12-13 | L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Method of forming high-k dielectric films based on novel titanium, zirconium, and hafnium precursors and their use for semiconductor manufacturing |
| US7795160B2 (en) * | 2006-07-21 | 2010-09-14 | Asm America Inc. | ALD of metal silicate films |
| US7727908B2 (en) | 2006-08-03 | 2010-06-01 | Micron Technology, Inc. | Deposition of ZrA1ON films |
| US7582549B2 (en) | 2006-08-25 | 2009-09-01 | Micron Technology, Inc. | Atomic layer deposited barium strontium titanium oxide films |
| US7605030B2 (en) | 2006-08-31 | 2009-10-20 | Micron Technology, Inc. | Hafnium tantalum oxynitride high-k dielectric and metal gates |
| US7544604B2 (en) * | 2006-08-31 | 2009-06-09 | Micron Technology, Inc. | Tantalum lanthanide oxynitride films |
| US7776765B2 (en) | 2006-08-31 | 2010-08-17 | Micron Technology, Inc. | Tantalum silicon oxynitride high-k dielectrics and metal gates |
| US20080057659A1 (en) * | 2006-08-31 | 2008-03-06 | Micron Technology, Inc. | Hafnium aluminium oxynitride high-K dielectric and metal gates |
| US7759747B2 (en) | 2006-08-31 | 2010-07-20 | Micron Technology, Inc. | Tantalum aluminum oxynitride high-κ dielectric |
| US7563730B2 (en) | 2006-08-31 | 2009-07-21 | Micron Technology, Inc. | Hafnium lanthanide oxynitride films |
| GB0702759D0 (en) * | 2007-02-13 | 2007-03-21 | Unversity Of Aveiro | Non aqueous thin film formation |
| KR100829539B1 (ko) * | 2007-04-13 | 2008-05-16 | 삼성전자주식회사 | 박막 제조 방법, 이를 이용한 게이트 구조물 및 커패시터의제조 방법 |
| KR100877100B1 (ko) * | 2007-04-16 | 2009-01-09 | 주식회사 하이닉스반도체 | 비휘발성 메모리 소자 제조 방법 |
| FR2915315B1 (fr) * | 2007-04-19 | 2009-06-26 | St Microelectronics Crolles 2 | Procede de fabrication d'un condensateur a stabilite elevee et condensateur correspondant. |
| US9337047B2 (en) * | 2007-09-17 | 2016-05-10 | Infineon Technologies Ag | Semiconductor device and method of making semiconductor device |
| US9418864B2 (en) * | 2008-01-30 | 2016-08-16 | Infineon Technologies Ag | Method of forming a non volatile memory device using wet etching |
| US7659158B2 (en) | 2008-03-31 | 2010-02-09 | Applied Materials, Inc. | Atomic layer deposition processes for non-volatile memory devices |
| US7999351B2 (en) * | 2008-06-25 | 2011-08-16 | Intel Corporation | Phase memorization for low leakage dielectric films |
| US20100062149A1 (en) * | 2008-09-08 | 2010-03-11 | Applied Materials, Inc. | Method for tuning a deposition rate during an atomic layer deposition process |
| US8491967B2 (en) * | 2008-09-08 | 2013-07-23 | Applied Materials, Inc. | In-situ chamber treatment and deposition process |
| US20100279124A1 (en) | 2008-10-31 | 2010-11-04 | Leybold Optics Gmbh | Hafnium or zirconium oxide Coating |
| US8907059B2 (en) * | 2008-11-14 | 2014-12-09 | Bio-Rad Laboratories, Inc. | Phosphopeptide enrichment of compositions by fractionation on ceramic hydroxyapatite |
| US7968406B2 (en) * | 2009-01-09 | 2011-06-28 | Micron Technology, Inc. | Memory cells, methods of forming dielectric materials, and methods of forming memory cells |
| US20110065287A1 (en) * | 2009-09-11 | 2011-03-17 | Tokyo Electron Limited | Pulsed chemical vapor deposition of metal-silicon-containing films |
| US8288811B2 (en) | 2010-03-22 | 2012-10-16 | Micron Technology, Inc. | Fortification of charge-storing material in high-K dielectric environments and resulting apparatuses |
| US20110298089A1 (en) * | 2010-06-03 | 2011-12-08 | International Business Machines Corporation | Trench capacitor and method of fabrication |
| KR20120064966A (ko) * | 2010-12-10 | 2012-06-20 | 에스케이하이닉스 주식회사 | 반도체 장치 제조 방법 |
| EP2769003A1 (en) * | 2011-10-21 | 2014-08-27 | University College Cork, National University Of Ireland | A single crystal high dielectric constant material |
| US9401663B2 (en) | 2012-12-21 | 2016-07-26 | Infineon Technologies Austria Ag | Power converter circuit with AC output |
| US9425622B2 (en) | 2013-01-08 | 2016-08-23 | Infineon Technologies Austria Ag | Power converter circuit with AC output and at least one transformer |
| US9478989B2 (en) | 2012-01-17 | 2016-10-25 | Infineon Technologies Austria Ag | Power converter circuit with AC output |
| US9461474B2 (en) | 2012-01-17 | 2016-10-04 | Infineon Technologies Austria Ag | Power converter circuit with AC output |
| US9484746B2 (en) | 2012-01-17 | 2016-11-01 | Infineon Technologies Austria Ag | Power converter circuit with AC output |
| WO2013109401A1 (en) * | 2012-01-19 | 2013-07-25 | Christian Dussarrat | Silicon containing compounds for ald deposition of metal silicate films |
| KR102106885B1 (ko) | 2013-03-15 | 2020-05-06 | 삼성전자 주식회사 | 실리콘 산화막 증착용 전구체 조성물 및 상기 전구체 조성물을 이용한 반도체 소자 제조 방법 |
| KR102052664B1 (ko) | 2013-03-15 | 2019-12-06 | 삼성전자주식회사 | 트리알킬실란 계열의 실리콘 전구체 및 이를 이용하는 박막 형성 방법 |
| DE102014100832A1 (de) * | 2014-01-24 | 2015-07-30 | Osram Opto Semiconductors Gmbh | ALD-Beschichtungsanlage und Verfahren zum Betreiben einer ALD-Beschichtungsanlage |
| KR20150128333A (ko) * | 2014-05-09 | 2015-11-18 | 한국생산기술연구원 | 유기 발광 소자의 보호층 제조방법 및 이를 이용하여 제조된 보호층을 포함하는 유기 발광 소자 |
| TWI809158B (zh) * | 2018-07-26 | 2023-07-21 | 日商東京威力科創股份有限公司 | 針對半導體元件形成晶體穩定的鐵電性鉿鋯基膜的方法 |
| US11462398B2 (en) | 2019-07-17 | 2022-10-04 | International Business Machines Corporation | Ligand selection for ternary oxide thin films |
| CN110498691A (zh) * | 2019-10-09 | 2019-11-26 | 江苏脒诺甫纳米材料有限公司 | 一种基于陶瓷烧结技术的硅基陶瓷气凝胶制备工艺 |
| TWI797640B (zh) | 2020-06-18 | 2023-04-01 | 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 | 基於矽之自組裝單層組成物及使用該組成物之表面製備 |
Family Cites Families (58)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR930012120B1 (ko) * | 1991-07-03 | 1993-12-24 | 삼성전자 주식회사 | 반도체장치 및 그의 제조방법 |
| JPH05239650A (ja) | 1992-02-27 | 1993-09-17 | Kojundo Chem Lab Co Ltd | シリコン酸化膜の製造法 |
| JPH07176732A (ja) * | 1993-10-29 | 1995-07-14 | Nkk Corp | Ｍｉｓ電界効果型トランジスタの製造方法 |
| AU1955395A (en) | 1994-03-26 | 1995-10-17 | Drake, Simone Robert | Tantalum compounds |
| JP3407409B2 (ja) * | 1994-07-27 | 2003-05-19 | 富士通株式会社 | 高誘電率薄膜の製造方法 |
| US6313035B1 (en) * | 1996-05-31 | 2001-11-06 | Micron Technology, Inc. | Chemical vapor deposition using organometallic precursors |
| US6080645A (en) | 1996-10-29 | 2000-06-27 | Micron Technology, Inc. | Method of making a doped silicon diffusion barrier region |
| TW438860B (en) * | 1996-11-20 | 2001-06-07 | Japan Synthetic Rubber Co Ltd | Curable resin composition and cured products |
| US6303391B1 (en) * | 1997-06-26 | 2001-10-16 | Advanced Technology Materials, Inc. | Low temperature chemical vapor deposition process for forming bismuth-containing ceramic films useful in ferroelectric memory devices |
| US5885877A (en) * | 1997-04-21 | 1999-03-23 | Advanced Micro Devices, Inc. | Composite gate electrode incorporating dopant diffusion-retarding barrier layer adjacent to underlying gate dielectric |
| US6020243A (en) * | 1997-07-24 | 2000-02-01 | Texas Instruments Incorporated | Zirconium and/or hafnium silicon-oxynitride gate dielectric |
| US7157385B2 (en) * | 2003-09-05 | 2007-01-02 | Micron Technology, Inc. | Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitry |
| US6057584A (en) * | 1997-12-19 | 2000-05-02 | Advanced Micro Devices, Inc. | Semiconductor device having a tri-layer gate insulating dielectric |
| US6093944A (en) * | 1998-06-04 | 2000-07-25 | Lucent Technologies Inc. | Dielectric materials of amorphous compositions of TI-O2 doped with rare earth elements and devices employing same |
| US6373114B1 (en) * | 1998-10-23 | 2002-04-16 | Micron Technology, Inc. | Barrier in gate stack for improved gate dielectric integrity |
| JP2000188400A (ja) * | 1998-11-09 | 2000-07-04 | Texas Instr Inc <Ti> | 半導体デバイスを形成する方法 |
| JP4152028B2 (ja) * | 1999-01-25 | 2008-09-17 | 株式会社Ａｄｅｋａ | ルテニウム系薄膜の製造方法 |
| US6573132B1 (en) * | 1999-03-25 | 2003-06-03 | Matsushita Electric Industrial Co., Ltd. | Method for fabricating a semiconductor device having contacts self-aligned with a gate electrode thereof |
| US6312831B1 (en) | 1999-04-30 | 2001-11-06 | Visteon Global Technologies, Inc. | Highly reflective, durable titanium/tin oxide films |
| US6273951B1 (en) * | 1999-06-16 | 2001-08-14 | Micron Technology, Inc. | Precursor mixtures for use in preparing layers on substrates |
| US6060755A (en) * | 1999-07-19 | 2000-05-09 | Sharp Laboratories Of America, Inc. | Aluminum-doped zirconium dielectric film transistor structure and deposition method for same |
| US6221712B1 (en) * | 1999-08-30 | 2001-04-24 | United Microelectronics Corp. | Method for fabricating gate oxide layer |
| US6399208B1 (en) * | 1999-10-07 | 2002-06-04 | Advanced Technology Materials Inc. | Source reagent composition and method for chemical vapor deposition formation or ZR/HF silicate gate dielectric thin films |
| JP2001108199A (ja) | 1999-10-12 | 2001-04-20 | Tori Chemical Kenkyusho:Kk | 残留物のパージが簡易な流体移送用配管装置及び流体供給装置、並びに配管装置中の残留物をパージする方法及び流体供給方法。 |
| US6203613B1 (en) * | 1999-10-19 | 2001-03-20 | International Business Machines Corporation | Atomic layer deposition with nitrate containing precursors |
| US6780704B1 (en) * | 1999-12-03 | 2004-08-24 | Asm International Nv | Conformal thin films over textured capacitor electrodes |
| US6335049B1 (en) * | 2000-01-03 | 2002-01-01 | Micron Technology, Inc. | Chemical vapor deposition methods of forming a high K dielectric layer and methods of forming a capacitor |
| EP1266054B1 (en) * | 2000-03-07 | 2006-12-20 | Asm International N.V. | Graded thin films |
| JP2001257344A (ja) | 2000-03-10 | 2001-09-21 | Toshiba Corp | 半導体装置及び半導体装置の製造方法 |
| US6984591B1 (en) | 2000-04-20 | 2006-01-10 | International Business Machines Corporation | Precursor source mixtures |
| KR20010114050A (ko) * | 2000-06-20 | 2001-12-29 | 박종섭 | 반도체 소자의 알루미늄 산화막 형성 방법 |
| US6837251B1 (en) | 2000-06-21 | 2005-01-04 | Air Products And Chemicals, Inc. | Multiple contents container assembly for ultrapure solvent purging |
| JP4651848B2 (ja) * | 2000-07-21 | 2011-03-16 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法並びにｃｍｏｓトランジスタ |
| JP2002053960A (ja) | 2000-08-04 | 2002-02-19 | Kojundo Chem Lab Co Ltd | ジルコニウムおよびハフニウムシリケート膜形成用ｃｖｄ原料組成物とその製法ならびにそれを用いたシリケート膜の製法 |
| US6368986B1 (en) * | 2000-08-31 | 2002-04-09 | Micron Technology, Inc. | Use of selective ozone TEOS oxide to create variable thickness layers and spacers |
| CN1341955A (zh) | 2000-09-06 | 2002-03-27 | 联华电子股份有限公司 | 使用氮化工艺的多晶硅化金属栅极制程 |
| JP5290488B2 (ja) * | 2000-09-28 | 2013-09-18 | プレジデント アンド フェロウズ オブ ハーバード カレッジ | 酸化物、ケイ酸塩及びリン酸塩の気相成長 |
| TW486392B (en) | 2000-09-29 | 2002-05-11 | Air Prod & Chem | Solvent blend for use in high purity precursor removal |
| US6300203B1 (en) * | 2000-10-05 | 2001-10-09 | Advanced Micro Devices, Inc. | Electrolytic deposition of dielectric precursor materials for use in in-laid gate MOS transistors |
| KR100385952B1 (ko) * | 2001-01-19 | 2003-06-02 | 삼성전자주식회사 | 탄탈륨 산화막을 가진 반도체 커패시터 및 그의 제조방법 |
| US6844604B2 (en) * | 2001-02-02 | 2005-01-18 | Samsung Electronics Co., Ltd. | Dielectric layer for semiconductor device and method of manufacturing the same |
| US6586792B2 (en) * | 2001-03-15 | 2003-07-01 | Micron Technology, Inc. | Structures, methods, and systems for ferroelectric memory transistors |
| WO2002090614A1 (en) * | 2001-03-20 | 2002-11-14 | Mattson Technology, Inc. | Method for depositing a coating having a relatively high dielectric constant onto a substrate |
| US6541280B2 (en) * | 2001-03-20 | 2003-04-01 | Motorola, Inc. | High K dielectric film |
| US7005392B2 (en) * | 2001-03-30 | 2006-02-28 | Advanced Technology Materials, Inc. | Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same |
| KR100418569B1 (ko) * | 2001-12-10 | 2004-02-14 | 주식회사 하이닉스반도체 | 단원자층증착을 이용한 고유전체 박막 형성방법 |
| EP1492161A4 (en) * | 2002-03-29 | 2006-05-24 | Tokyo Electron Ltd | METHOD FOR CONSTITUTING AN UNDERLYING INSULATING FILM |
| US7164165B2 (en) * | 2002-05-16 | 2007-01-16 | Micron Technology, Inc. | MIS capacitor |
| JP3627106B2 (ja) | 2002-05-27 | 2005-03-09 | 株式会社高純度化学研究所 | 原子層吸着堆積法によるハフニウムシリケート薄膜の製造方法 |
| US7326988B2 (en) * | 2002-07-02 | 2008-02-05 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for fabricating the same |
| US6723658B2 (en) * | 2002-07-15 | 2004-04-20 | Texas Instruments Incorporated | Gate structure and method |
| TW200408015A (en) | 2002-08-18 | 2004-05-16 | Asml Us Inc | Atomic layer deposition of high K metal silicates |
| US7041609B2 (en) | 2002-08-28 | 2006-05-09 | Micron Technology, Inc. | Systems and methods for forming metal oxides using alcohols |
| US7112485B2 (en) | 2002-08-28 | 2006-09-26 | Micron Technology, Inc. | Systems and methods for forming zirconium and/or hafnium-containing layers |
| US6958300B2 (en) | 2002-08-28 | 2005-10-25 | Micron Technology, Inc. | Systems and methods for forming metal oxides using metal organo-amines and metal organo-oxides |
| US20050070126A1 (en) * | 2003-04-21 | 2005-03-31 | Yoshihide Senzaki | System and method for forming multi-component dielectric films |
| US7078742B2 (en) * | 2003-07-25 | 2006-07-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Strained-channel semiconductor structure and method of fabricating the same |
| KR100889362B1 (ko) * | 2004-10-19 | 2009-03-18 | 삼성전자주식회사 | 다층 유전체막으로 이루어진 트랜지스터 및 그 제조 방법 |
-
2002
- 2002-08-28 US US10/229,779 patent/US7112485B2/en not_active Expired - Lifetime
-
2003
- 2003-08-27 AU AU2003272249A patent/AU2003272249A1/en not_active Abandoned
- 2003-08-27 EP EP03754423A patent/EP1532290B1/en not_active Expired - Lifetime
- 2003-08-27 AT AT03754423T patent/ATE418627T1/de not_active IP Right Cessation
- 2003-08-27 KR KR1020107013410A patent/KR20100072378A/ko not_active Ceased
- 2003-08-27 JP JP2004531945A patent/JP2005537645A/ja active Pending
- 2003-08-27 CN CNA2006101425235A patent/CN1937253A/zh active Pending
- 2003-08-27 CN CNA038245876A patent/CN1688744A/zh active Pending
- 2003-08-27 TW TW092123651A patent/TWI249587B/zh not_active IP Right Cessation
- 2003-08-27 WO PCT/US2003/027152 patent/WO2004020691A2/en not_active Ceased
- 2003-08-27 DE DE60325484T patent/DE60325484D1/de not_active Expired - Lifetime
- 2003-08-27 KR KR1020057003574A patent/KR20050042171A/ko not_active Ceased
-
2006
- 2006-07-27 US US11/493,967 patent/US9184061B2/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2005537645A5 (enExample) | ||
| KR101234970B1 (ko) | 니오브 질화물 상에 탄탈 산화물층을 포함하는 구조물 및 장치와, 그 제조 방법 | |
| TW535288B (en) | MFOS memory transistor and method of fabricating same | |
| JP5029927B2 (ja) | 基板上に金属含有層を形成するための蒸着法 | |
| US9012298B2 (en) | Methods for reproducible flash layer deposition | |
| CN100422383C (zh) | 采用醇形成金属氧化物的系统和方法 | |
| US7837797B2 (en) | Systems and methods for forming niobium and/or vanadium containing layers using atomic layer deposition | |
| JP2005537638A5 (enExample) | ||
| JP2005536063A (ja) | Ｈｉｇｈ−ｋ金属酸化物の原子層堆積 | |
| JP2001203339A (ja) | 半導体素子のキャパシタ製造方法 | |
| TWI354711B (enExample) | ||
| US8633114B2 (en) | Methods for manufacturing high dielectric constant films | |
| US8633119B2 (en) | Methods for manufacturing high dielectric constant films | |
| JP2001345285A (ja) | 半導体装置の製造方法及び半導体製造装置 | |
| TW200400616A (en) | Method for fabricating capacitor in semiconductor device | |
| TWI830973B (zh) | 使用超低溫ａｌｄ於高品質含矽膜沈積之方法 | |
| JP4088913B2 (ja) | 半導体素子のキャパシタ製造方法 | |
| JP2001053255A (ja) | 半導体メモリ素子のキャパシタの製造方法 | |
| KR20080061486A (ko) | 반도체 소자 및 그 제조 방법 | |
| KR100399073B1 (ko) | 반도체 소자의 캐패시터 및 그 제조방법 | |
| JP2001144271A (ja) | 半導体メモリ素子のキャパシタ形成方法 | |
| KR101062812B1 (ko) | 반도체 소자의 하프늄 산화막 캐패시터 형성방법 | |
| KR100646923B1 (ko) | 반도체 소자의 커패시터 제조 방법 | |
| KR100937988B1 (ko) | 반도체 소자의 캐패시터 제조방법 | |
| KR20070106286A (ko) | 루틸구조로 결정화된 티타늄산화막의 형성 방법 및 그를이용한 캐패시터의 제조 방법 |