JP2005537645A - ジルコニウムおよび／またはハフニウム含有層を形成するシステムおよび方法 - Google Patents

ジルコニウムおよび／またはハフニウム含有層を形成するシステムおよび方法 Download PDF

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JP2005537645A
JP2005537645A JP2004531945A JP2004531945A JP2005537645A JP 2005537645 A JP2005537645 A JP 2005537645A JP 2004531945 A JP2004531945 A JP 2004531945A JP 2004531945 A JP2004531945 A JP 2004531945A JP 2005537645 A JP2005537645 A JP 2005537645A
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precursor compound
substrate
metal
hafnium
zirconium
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JP2005537645A5 (enExample
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エー． ヴァールトシュトラ，ブライアン
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マイクロン テクノロジー，インコーポレイティド
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
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    • H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H01L21/02148—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing hafnium, e.g. HfSiOx or HfSiON
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    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H01L21/02159—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing zirconium, e.g. ZrSiOx
    • H—ELECTRICITY
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    • H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H01L21/02161—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing more than one metal element
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    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
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    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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    • H01L21/02362—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment formation of intermediate layers, e.g. capping layers or diffusion barriers
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    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Glass Compositions (AREA)
  • Semiconductor Memories (AREA)
  • Nanotechnology (AREA)
JP2004531945A 2002-08-28 2003-08-27 ジルコニウムおよび／またはハフニウム含有層を形成するシステムおよび方法 Pending JP2005537645A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/229,779 US7112485B2 (en) 2002-08-28 2002-08-28 Systems and methods for forming zirconium and/or hafnium-containing layers
PCT/US2003/027152 WO2004020691A2 (en) 2002-08-28 2003-08-27 Systems and methods for forming zirconium and/or hafnium-containing layers

Publications (2)

Publication Number Publication Date
JP2005537645A true JP2005537645A (ja) 2005-12-08
JP2005537645A5 JP2005537645A5 (enExample) 2006-10-26

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JP2004531945A Pending JP2005537645A (ja) 2002-08-28 2003-08-27 ジルコニウムおよび／またはハフニウム含有層を形成するシステムおよび方法

Country Status (10)

Country Link
US (2) US7112485B2 (enExample)
EP (1) EP1532290B1 (enExample)
JP (1) JP2005537645A (enExample)
KR (2) KR20100072378A (enExample)
CN (2) CN1937253A (enExample)
AT (1) ATE418627T1 (enExample)
AU (1) AU2003272249A1 (enExample)
DE (1) DE60325484D1 (enExample)
TW (1) TWI249587B (enExample)
WO (1) WO2004020691A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120062895A (ko) * 2009-09-11 2012-06-14 도쿄엘렉트론가부시키가이샤 금속-실리콘 함유 막의 펄스형 화학 기상 증착
KR101442212B1 (ko) 2006-07-21 2014-09-18 에이에스엠 아메리카, 인코포레이티드 금속 실리케이트 막들의 원자층 증착

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6620723B1 (en) * 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
JP5290488B2 (ja) 2000-09-28 2013-09-18 プレジデント アンド フェロウズ オブ ハーバード カレッジ 酸化物、ケイ酸塩及びリン酸塩の気相成長
US6846516B2 (en) * 2002-04-08 2005-01-25 Applied Materials, Inc. Multiple precursor cyclical deposition system
US20030235961A1 (en) * 2002-04-17 2003-12-25 Applied Materials, Inc. Cyclical sequential deposition of multicomponent films
US7160577B2 (en) 2002-05-02 2007-01-09 Micron Technology, Inc. Methods for atomic-layer deposition of aluminum oxides in integrated circuits
US7067439B2 (en) * 2002-06-14 2006-06-27 Applied Materials, Inc. ALD metal oxide deposition process using direct oxidation
US6858547B2 (en) * 2002-06-14 2005-02-22 Applied Materials, Inc. System and method for forming a gate dielectric
US20030232501A1 (en) * 2002-06-14 2003-12-18 Kher Shreyas S. Surface pre-treatment for enhancement of nucleation of high dielectric constant materials
US6921702B2 (en) * 2002-07-30 2005-07-26 Micron Technology Inc. Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics
US6958300B2 (en) 2002-08-28 2005-10-25 Micron Technology, Inc. Systems and methods for forming metal oxides using metal organo-amines and metal organo-oxides
US7112485B2 (en) 2002-08-28 2006-09-26 Micron Technology, Inc. Systems and methods for forming zirconium and/or hafnium-containing layers
US7041609B2 (en) * 2002-08-28 2006-05-09 Micron Technology, Inc. Systems and methods for forming metal oxides using alcohols
US7101813B2 (en) 2002-12-04 2006-09-05 Micron Technology Inc. Atomic layer deposited Zr-Sn-Ti-O films
US6958302B2 (en) * 2002-12-04 2005-10-25 Micron Technology, Inc. Atomic layer deposited Zr-Sn-Ti-O films using TiI4
US7713592B2 (en) * 2003-02-04 2010-05-11 Tegal Corporation Nanolayer deposition process
US7135369B2 (en) 2003-03-31 2006-11-14 Micron Technology, Inc. Atomic layer deposited ZrAlxOy dielectric layers including Zr4AlO9
US20040198069A1 (en) * 2003-04-04 2004-10-07 Applied Materials, Inc. Method for hafnium nitride deposition
US7390535B2 (en) 2003-07-03 2008-06-24 Aeromet Technologies, Inc. Simple chemical vapor deposition system and methods for depositing multiple-metal aluminide coatings
JP3956225B2 (ja) * 2003-08-26 2007-08-08 株式会社トリケミカル研究所 膜形成方法
US7314812B2 (en) 2003-08-28 2008-01-01 Micron Technology, Inc. Method for reducing the effective thickness of gate oxides by nitrogen implantation and anneal
US6989573B2 (en) * 2003-10-10 2006-01-24 Micron Technology, Inc. Lanthanide oxide/zirconium oxide atomic layer deposited nanolaminate gate dielectrics
US20050153571A1 (en) * 2003-11-17 2005-07-14 Yoshihide Senzaki Nitridation of high-k dielectric films
KR100639673B1 (ko) * 2003-12-22 2006-10-30 삼성전자주식회사 고유전 합금으로 이루어지는 게이트 유전막을 구비하는반도체 소자 및 그 제조 방법
CN100447962C (zh) * 2004-01-21 2008-12-31 株式会社日立国际电气 半导体装置的制造方法及衬底处理装置
US20050252449A1 (en) * 2004-05-12 2005-11-17 Nguyen Son T Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
US8119210B2 (en) 2004-05-21 2012-02-21 Applied Materials, Inc. Formation of a silicon oxynitride layer on a high-k dielectric material
US8323754B2 (en) * 2004-05-21 2012-12-04 Applied Materials, Inc. Stabilization of high-k dielectric materials
US20060019033A1 (en) * 2004-05-21 2006-01-26 Applied Materials, Inc. Plasma treatment of hafnium-containing materials
US20060062917A1 (en) * 2004-05-21 2006-03-23 Shankar Muthukrishnan Vapor deposition of hafnium silicate materials with tris(dimethylamino)silane
US6852588B1 (en) * 2004-06-30 2005-02-08 Freescale Semiconductor, Inc. Methods of fabricating semiconductor structures comprising epitaxial Hf3Si2 layers
US7601649B2 (en) * 2004-08-02 2009-10-13 Micron Technology, Inc. Zirconium-doped tantalum oxide films
US7588988B2 (en) 2004-08-31 2009-09-15 Micron Technology, Inc. Method of forming apparatus having oxide films formed using atomic layer deposition
US7494939B2 (en) 2004-08-31 2009-02-24 Micron Technology, Inc. Methods for forming a lanthanum-metal oxide dielectric layer
KR100647484B1 (ko) * 2004-11-23 2006-11-23 삼성전자주식회사 박막 제조 방법 및 이를 이용한 게이트 구조물,커패시터와 플래시 메모리 장치의 제조 방법
US7235501B2 (en) 2004-12-13 2007-06-26 Micron Technology, Inc. Lanthanum hafnium oxide dielectrics
US7560395B2 (en) * 2005-01-05 2009-07-14 Micron Technology, Inc. Atomic layer deposited hafnium tantalum oxide dielectrics
US7422983B2 (en) 2005-02-24 2008-09-09 International Business Machines Corporation Ta-TaN selective removal process for integrated device fabrication
JP2006279019A (ja) * 2005-03-03 2006-10-12 Sony Corp 薄膜の形成方法および半導体装置の製造方法
US7687409B2 (en) 2005-03-29 2010-03-30 Micron Technology, Inc. Atomic layer deposited titanium silicon oxide films
JP4522900B2 (ja) * 2005-03-30 2010-08-11 東京エレクトロン株式会社 成膜方法および記録媒体
US7662729B2 (en) 2005-04-28 2010-02-16 Micron Technology, Inc. Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer
US7390756B2 (en) * 2005-04-28 2008-06-24 Micron Technology, Inc. Atomic layer deposited zirconium silicon oxide films
JP4711733B2 (ja) * 2005-05-12 2011-06-29 株式会社Adeka 酸化珪素系薄膜の製造方法
US7572695B2 (en) 2005-05-27 2009-08-11 Micron Technology, Inc. Hafnium titanium oxide films
US7510983B2 (en) 2005-06-14 2009-03-31 Micron Technology, Inc. Iridium/zirconium oxide structure
US20070049043A1 (en) * 2005-08-23 2007-03-01 Applied Materials, Inc. Nitrogen profile engineering in HI-K nitridation for device performance enhancement and reliability improvement
US7402534B2 (en) * 2005-08-26 2008-07-22 Applied Materials, Inc. Pretreatment processes within a batch ALD reactor
US20070049023A1 (en) * 2005-08-29 2007-03-01 Micron Technology, Inc. Zirconium-doped gadolinium oxide films
US7393736B2 (en) * 2005-08-29 2008-07-01 Micron Technology, Inc. Atomic layer deposition of Zrx Hfy Sn1-x-y O2 films as high k gate dielectrics
KR100718839B1 (ko) * 2005-08-31 2007-05-16 삼성전자주식회사 박막 제조 방법 및 이를 이용한 커패시터의 제조 방법
US7410910B2 (en) 2005-08-31 2008-08-12 Micron Technology, Inc. Lanthanum aluminum oxynitride dielectric films
US7615438B2 (en) 2005-12-08 2009-11-10 Micron Technology, Inc. Lanthanide yttrium aluminum oxide dielectric films
US7592251B2 (en) * 2005-12-08 2009-09-22 Micron Technology, Inc. Hafnium tantalum titanium oxide films
US7972974B2 (en) 2006-01-10 2011-07-05 Micron Technology, Inc. Gallium lanthanide oxide films
US7709402B2 (en) 2006-02-16 2010-05-04 Micron Technology, Inc. Conductive layers for hafnium silicon oxynitride films
US7964514B2 (en) * 2006-03-02 2011-06-21 Applied Materials, Inc. Multiple nitrogen plasma treatments for thin SiON dielectrics
US7582161B2 (en) * 2006-04-07 2009-09-01 Micron Technology, Inc. Atomic layer deposited titanium-doped indium oxide films
US7798096B2 (en) 2006-05-05 2010-09-21 Applied Materials, Inc. Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool
WO2007140813A1 (en) * 2006-06-02 2007-12-13 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Method of forming high-k dielectric films based on novel titanium, zirconium, and hafnium precursors and their use for semiconductor manufacturing
US7727908B2 (en) 2006-08-03 2010-06-01 Micron Technology, Inc. Deposition of ZrA1ON films
US7582549B2 (en) 2006-08-25 2009-09-01 Micron Technology, Inc. Atomic layer deposited barium strontium titanium oxide films
US7605030B2 (en) 2006-08-31 2009-10-20 Micron Technology, Inc. Hafnium tantalum oxynitride high-k dielectric and metal gates
US7544604B2 (en) * 2006-08-31 2009-06-09 Micron Technology, Inc. Tantalum lanthanide oxynitride films
US7776765B2 (en) 2006-08-31 2010-08-17 Micron Technology, Inc. Tantalum silicon oxynitride high-k dielectrics and metal gates
US20080057659A1 (en) * 2006-08-31 2008-03-06 Micron Technology, Inc. Hafnium aluminium oxynitride high-K dielectric and metal gates
US7759747B2 (en) 2006-08-31 2010-07-20 Micron Technology, Inc. Tantalum aluminum oxynitride high-κ dielectric
US7563730B2 (en) 2006-08-31 2009-07-21 Micron Technology, Inc. Hafnium lanthanide oxynitride films
GB0702759D0 (en) * 2007-02-13 2007-03-21 Unversity Of Aveiro Non aqueous thin film formation
KR100829539B1 (ko) * 2007-04-13 2008-05-16 삼성전자주식회사 박막 제조 방법, 이를 이용한 게이트 구조물 및 커패시터의제조 방법
KR100877100B1 (ko) * 2007-04-16 2009-01-09 주식회사 하이닉스반도체 비휘발성 메모리 소자 제조 방법
FR2915315B1 (fr) * 2007-04-19 2009-06-26 St Microelectronics Crolles 2 Procede de fabrication d'un condensateur a stabilite elevee et condensateur correspondant.
US9337047B2 (en) * 2007-09-17 2016-05-10 Infineon Technologies Ag Semiconductor device and method of making semiconductor device
US9418864B2 (en) * 2008-01-30 2016-08-16 Infineon Technologies Ag Method of forming a non volatile memory device using wet etching
US7659158B2 (en) 2008-03-31 2010-02-09 Applied Materials, Inc. Atomic layer deposition processes for non-volatile memory devices
US7999351B2 (en) * 2008-06-25 2011-08-16 Intel Corporation Phase memorization for low leakage dielectric films
US20100062149A1 (en) * 2008-09-08 2010-03-11 Applied Materials, Inc. Method for tuning a deposition rate during an atomic layer deposition process
US8491967B2 (en) * 2008-09-08 2013-07-23 Applied Materials, Inc. In-situ chamber treatment and deposition process
US20100279124A1 (en) 2008-10-31 2010-11-04 Leybold Optics Gmbh Hafnium or zirconium oxide Coating
US8907059B2 (en) * 2008-11-14 2014-12-09 Bio-Rad Laboratories, Inc. Phosphopeptide enrichment of compositions by fractionation on ceramic hydroxyapatite
US7968406B2 (en) * 2009-01-09 2011-06-28 Micron Technology, Inc. Memory cells, methods of forming dielectric materials, and methods of forming memory cells
US8288811B2 (en) 2010-03-22 2012-10-16 Micron Technology, Inc. Fortification of charge-storing material in high-K dielectric environments and resulting apparatuses
US20110298089A1 (en) * 2010-06-03 2011-12-08 International Business Machines Corporation Trench capacitor and method of fabrication
KR20120064966A (ko) * 2010-12-10 2012-06-20 에스케이하이닉스 주식회사 반도체 장치 제조 방법
EP2769003A1 (en) * 2011-10-21 2014-08-27 University College Cork, National University Of Ireland A single crystal high dielectric constant material
US9401663B2 (en) 2012-12-21 2016-07-26 Infineon Technologies Austria Ag Power converter circuit with AC output
US9425622B2 (en) 2013-01-08 2016-08-23 Infineon Technologies Austria Ag Power converter circuit with AC output and at least one transformer
US9478989B2 (en) 2012-01-17 2016-10-25 Infineon Technologies Austria Ag Power converter circuit with AC output
US9461474B2 (en) 2012-01-17 2016-10-04 Infineon Technologies Austria Ag Power converter circuit with AC output
US9484746B2 (en) 2012-01-17 2016-11-01 Infineon Technologies Austria Ag Power converter circuit with AC output
WO2013109401A1 (en) * 2012-01-19 2013-07-25 Christian Dussarrat Silicon containing compounds for ald deposition of metal silicate films
KR102106885B1 (ko) 2013-03-15 2020-05-06 삼성전자 주식회사 실리콘 산화막 증착용 전구체 조성물 및 상기 전구체 조성물을 이용한 반도체 소자 제조 방법
KR102052664B1 (ko) 2013-03-15 2019-12-06 삼성전자주식회사 트리알킬실란 계열의 실리콘 전구체 및 이를 이용하는 박막 형성 방법
DE102014100832A1 (de) * 2014-01-24 2015-07-30 Osram Opto Semiconductors Gmbh ALD-Beschichtungsanlage und Verfahren zum Betreiben einer ALD-Beschichtungsanlage
KR20150128333A (ko) * 2014-05-09 2015-11-18 한국생산기술연구원 유기 발광 소자의 보호층 제조방법 및 이를 이용하여 제조된 보호층을 포함하는 유기 발광 소자
TWI809158B (zh) * 2018-07-26 2023-07-21 日商東京威力科創股份有限公司 針對半導體元件形成晶體穩定的鐵電性鉿鋯基膜的方法
US11462398B2 (en) 2019-07-17 2022-10-04 International Business Machines Corporation Ligand selection for ternary oxide thin films
CN110498691A (zh) * 2019-10-09 2019-11-26 江苏脒诺甫纳米材料有限公司 一种基于陶瓷烧结技术的硅基陶瓷气凝胶制备工艺
TWI797640B (zh) 2020-06-18 2023-04-01 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 基於矽之自組裝單層組成物及使用該組成物之表面製備

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05239650A (ja) * 1992-02-27 1993-09-17 Kojundo Chem Lab Co Ltd シリコン酸化膜の製造法
JPH07176732A (ja) * 1993-10-29 1995-07-14 Nkk Corp Ｍｉｓ電界効果型トランジスタの製造方法
JP2000188400A (ja) * 1998-11-09 2000-07-04 Texas Instr Inc <Ti> 半導体デバイスを形成する方法
JP2002060944A (ja) * 2000-04-20 2002-02-28 Internatl Business Mach Corp <Ibm> 前駆原料混合物、膜付着方法、及び構造の形成
JP2002100760A (ja) * 2000-07-21 2002-04-05 Mitsubishi Electric Corp 半導体装置およびその製造方法並びにｃｍｏｓトランジスタ
JP2003347297A (ja) * 2002-05-27 2003-12-05 Kojundo Chem Lab Co Ltd 原子層吸着堆積法によるハフニウムシリケート薄膜の製造方法
JP2008277844A (ja) * 2002-03-29 2008-11-13 Tokyo Electron Ltd 絶縁膜の形成方法
JP2008300850A (ja) * 2001-03-30 2008-12-11 Advanced Technology Materials Inc 誘電体薄膜をｃｖｄ形成するための金属アミド前駆体およびアミノシラン前駆体

Family Cites Families (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR930012120B1 (ko) * 1991-07-03 1993-12-24 삼성전자 주식회사 반도체장치 및 그의 제조방법
AU1955395A (en) 1994-03-26 1995-10-17 Drake, Simone Robert Tantalum compounds
JP3407409B2 (ja) * 1994-07-27 2003-05-19 富士通株式会社 高誘電率薄膜の製造方法
US6313035B1 (en) * 1996-05-31 2001-11-06 Micron Technology, Inc. Chemical vapor deposition using organometallic precursors
US6080645A (en) 1996-10-29 2000-06-27 Micron Technology, Inc. Method of making a doped silicon diffusion barrier region
TW438860B (en) * 1996-11-20 2001-06-07 Japan Synthetic Rubber Co Ltd Curable resin composition and cured products
US6303391B1 (en) * 1997-06-26 2001-10-16 Advanced Technology Materials, Inc. Low temperature chemical vapor deposition process for forming bismuth-containing ceramic films useful in ferroelectric memory devices
US5885877A (en) * 1997-04-21 1999-03-23 Advanced Micro Devices, Inc. Composite gate electrode incorporating dopant diffusion-retarding barrier layer adjacent to underlying gate dielectric
US6020243A (en) * 1997-07-24 2000-02-01 Texas Instruments Incorporated Zirconium and/or hafnium silicon-oxynitride gate dielectric
US7157385B2 (en) * 2003-09-05 2007-01-02 Micron Technology, Inc. Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitry
US6057584A (en) * 1997-12-19 2000-05-02 Advanced Micro Devices, Inc. Semiconductor device having a tri-layer gate insulating dielectric
US6093944A (en) * 1998-06-04 2000-07-25 Lucent Technologies Inc. Dielectric materials of amorphous compositions of TI-O2 doped with rare earth elements and devices employing same
US6373114B1 (en) * 1998-10-23 2002-04-16 Micron Technology, Inc. Barrier in gate stack for improved gate dielectric integrity
JP4152028B2 (ja) * 1999-01-25 2008-09-17 株式会社Ａｄｅｋａ ルテニウム系薄膜の製造方法
US6573132B1 (en) * 1999-03-25 2003-06-03 Matsushita Electric Industrial Co., Ltd. Method for fabricating a semiconductor device having contacts self-aligned with a gate electrode thereof
US6312831B1 (en) 1999-04-30 2001-11-06 Visteon Global Technologies, Inc. Highly reflective, durable titanium/tin oxide films
US6273951B1 (en) * 1999-06-16 2001-08-14 Micron Technology, Inc. Precursor mixtures for use in preparing layers on substrates
US6060755A (en) * 1999-07-19 2000-05-09 Sharp Laboratories Of America, Inc. Aluminum-doped zirconium dielectric film transistor structure and deposition method for same
US6221712B1 (en) * 1999-08-30 2001-04-24 United Microelectronics Corp. Method for fabricating gate oxide layer
US6399208B1 (en) * 1999-10-07 2002-06-04 Advanced Technology Materials Inc. Source reagent composition and method for chemical vapor deposition formation or ZR/HF silicate gate dielectric thin films
JP2001108199A (ja) 1999-10-12 2001-04-20 Tori Chemical Kenkyusho:Kk 残留物のパージが簡易な流体移送用配管装置及び流体供給装置、並びに配管装置中の残留物をパージする方法及び流体供給方法。
US6203613B1 (en) * 1999-10-19 2001-03-20 International Business Machines Corporation Atomic layer deposition with nitrate containing precursors
US6780704B1 (en) * 1999-12-03 2004-08-24 Asm International Nv Conformal thin films over textured capacitor electrodes
US6335049B1 (en) * 2000-01-03 2002-01-01 Micron Technology, Inc. Chemical vapor deposition methods of forming a high K dielectric layer and methods of forming a capacitor
EP1266054B1 (en) * 2000-03-07 2006-12-20 Asm International N.V. Graded thin films
JP2001257344A (ja) 2000-03-10 2001-09-21 Toshiba Corp 半導体装置及び半導体装置の製造方法
KR20010114050A (ko) * 2000-06-20 2001-12-29 박종섭 반도체 소자의 알루미늄 산화막 형성 방법
US6837251B1 (en) 2000-06-21 2005-01-04 Air Products And Chemicals, Inc. Multiple contents container assembly for ultrapure solvent purging
JP2002053960A (ja) 2000-08-04 2002-02-19 Kojundo Chem Lab Co Ltd ジルコニウムおよびハフニウムシリケート膜形成用ｃｖｄ原料組成物とその製法ならびにそれを用いたシリケート膜の製法
US6368986B1 (en) * 2000-08-31 2002-04-09 Micron Technology, Inc. Use of selective ozone TEOS oxide to create variable thickness layers and spacers
CN1341955A (zh) 2000-09-06 2002-03-27 联华电子股份有限公司 使用氮化工艺的多晶硅化金属栅极制程
JP5290488B2 (ja) * 2000-09-28 2013-09-18 プレジデント アンド フェロウズ オブ ハーバード カレッジ 酸化物、ケイ酸塩及びリン酸塩の気相成長
TW486392B (en) 2000-09-29 2002-05-11 Air Prod & Chem Solvent blend for use in high purity precursor removal
US6300203B1 (en) * 2000-10-05 2001-10-09 Advanced Micro Devices, Inc. Electrolytic deposition of dielectric precursor materials for use in in-laid gate MOS transistors
KR100385952B1 (ko) * 2001-01-19 2003-06-02 삼성전자주식회사 탄탈륨 산화막을 가진 반도체 커패시터 및 그의 제조방법
US6844604B2 (en) * 2001-02-02 2005-01-18 Samsung Electronics Co., Ltd. Dielectric layer for semiconductor device and method of manufacturing the same
US6586792B2 (en) * 2001-03-15 2003-07-01 Micron Technology, Inc. Structures, methods, and systems for ferroelectric memory transistors
WO2002090614A1 (en) * 2001-03-20 2002-11-14 Mattson Technology, Inc. Method for depositing a coating having a relatively high dielectric constant onto a substrate
US6541280B2 (en) * 2001-03-20 2003-04-01 Motorola, Inc. High K dielectric film
KR100418569B1 (ko) * 2001-12-10 2004-02-14 주식회사 하이닉스반도체 단원자층증착을 이용한 고유전체 박막 형성방법
US7164165B2 (en) * 2002-05-16 2007-01-16 Micron Technology, Inc. MIS capacitor
US7326988B2 (en) * 2002-07-02 2008-02-05 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
US6723658B2 (en) * 2002-07-15 2004-04-20 Texas Instruments Incorporated Gate structure and method
TW200408015A (en) 2002-08-18 2004-05-16 Asml Us Inc Atomic layer deposition of high K metal silicates
US7041609B2 (en) 2002-08-28 2006-05-09 Micron Technology, Inc. Systems and methods for forming metal oxides using alcohols
US7112485B2 (en) 2002-08-28 2006-09-26 Micron Technology, Inc. Systems and methods for forming zirconium and/or hafnium-containing layers
US6958300B2 (en) 2002-08-28 2005-10-25 Micron Technology, Inc. Systems and methods for forming metal oxides using metal organo-amines and metal organo-oxides
US20050070126A1 (en) * 2003-04-21 2005-03-31 Yoshihide Senzaki System and method for forming multi-component dielectric films
US7078742B2 (en) * 2003-07-25 2006-07-18 Taiwan Semiconductor Manufacturing Co., Ltd. Strained-channel semiconductor structure and method of fabricating the same
KR100889362B1 (ko) * 2004-10-19 2009-03-18 삼성전자주식회사 다층 유전체막으로 이루어진 트랜지스터 및 그 제조 방법

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05239650A (ja) * 1992-02-27 1993-09-17 Kojundo Chem Lab Co Ltd シリコン酸化膜の製造法
JPH07176732A (ja) * 1993-10-29 1995-07-14 Nkk Corp Ｍｉｓ電界効果型トランジスタの製造方法
JP2000188400A (ja) * 1998-11-09 2000-07-04 Texas Instr Inc <Ti> 半導体デバイスを形成する方法
JP2002060944A (ja) * 2000-04-20 2002-02-28 Internatl Business Mach Corp <Ibm> 前駆原料混合物、膜付着方法、及び構造の形成
JP2002100760A (ja) * 2000-07-21 2002-04-05 Mitsubishi Electric Corp 半導体装置およびその製造方法並びにｃｍｏｓトランジスタ
JP2008300850A (ja) * 2001-03-30 2008-12-11 Advanced Technology Materials Inc 誘電体薄膜をｃｖｄ形成するための金属アミド前駆体およびアミノシラン前駆体
JP2008277844A (ja) * 2002-03-29 2008-11-13 Tokyo Electron Ltd 絶縁膜の形成方法
JP2003347297A (ja) * 2002-05-27 2003-12-05 Kojundo Chem Lab Co Ltd 原子層吸着堆積法によるハフニウムシリケート薄膜の製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101442212B1 (ko) 2006-07-21 2014-09-18 에이에스엠 아메리카, 인코포레이티드 금속 실리케이트 막들의 원자층 증착
KR20120062895A (ko) * 2009-09-11 2012-06-14 도쿄엘렉트론가부시키가이샤 금속-실리콘 함유 막의 펄스형 화학 기상 증착
JP2013504875A (ja) * 2009-09-11 2013-02-07 東京エレクトロン株式会社 金属−シリコン−含有膜のパルス化学蒸着方法
KR101696957B1 (ko) * 2009-09-11 2017-01-16 도쿄엘렉트론가부시키가이샤 금속-실리콘 함유 막의 펄스형 화학 기상 증착

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KR20100072378A (ko) 2010-06-30
WO2004020691A3 (en) 2004-07-08
DE60325484D1 (de) 2009-02-05
EP1532290A2 (en) 2005-05-25
US7112485B2 (en) 2006-09-26
TWI249587B (en) 2006-02-21
US20040040501A1 (en) 2004-03-04
AU2003272249A1 (en) 2004-03-19
CN1688744A (zh) 2005-10-26
ATE418627T1 (de) 2009-01-15
TW200426240A (en) 2004-12-01
EP1532290B1 (en) 2008-12-24
WO2004020691A2 (en) 2004-03-11
CN1937253A (zh) 2007-03-28
US20050160981A9 (en) 2005-07-28
US20060261389A1 (en) 2006-11-23
US9184061B2 (en) 2015-11-10

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