TWI354711B - - Google Patents

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Publication number
TWI354711B
TWI354711B TW093131901A TW93131901A TWI354711B TW I354711 B TWI354711 B TW I354711B TW 093131901 A TW093131901 A TW 093131901A TW 93131901 A TW93131901 A TW 93131901A TW I354711 B TWI354711 B TW I354711B
Authority
TW
Taiwan
Prior art keywords
film
insulating film
substrate
gas
compound
Prior art date
Application number
TW093131901A
Other languages
English (en)
Chinese (zh)
Other versions
TW200526804A (en
Inventor
Shigeru Nakajima
Dong-Kyun Choi
Tomonori Fujiwara
Hiroaki Ikegawa
Genji Nakamura
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200526804A publication Critical patent/TW200526804A/zh
Application granted granted Critical
Publication of TWI354711B publication Critical patent/TWI354711B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H10P10/00—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D64/01342—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
TW093131901A 2003-10-30 2004-10-20 Method of manufacturing semiconductor device, film-forming apparatus, and storage medium TW200526804A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003371182 2003-10-30

Publications (2)

Publication Number Publication Date
TW200526804A TW200526804A (en) 2005-08-16
TWI354711B true TWI354711B (enExample) 2011-12-21

Family

ID=34685745

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093131901A TW200526804A (en) 2003-10-30 2004-10-20 Method of manufacturing semiconductor device, film-forming apparatus, and storage medium

Country Status (3)

Country Link
US (1) US7084023B2 (enExample)
KR (1) KR100944831B1 (enExample)
TW (1) TW200526804A (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4358492B2 (ja) * 2002-09-25 2009-11-04 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード 熱化学気相成長法によるシリコン窒化物膜またはシリコンオキシ窒化物膜の製造方法
JP4455225B2 (ja) * 2004-08-25 2010-04-21 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
US7479425B2 (en) * 2005-01-20 2009-01-20 Chartered Semiconductor Manufacturing, Ltd Method for forming high-K charge storage device
JP2006261434A (ja) * 2005-03-17 2006-09-28 L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude シリコン酸化膜の形成方法
KR100877100B1 (ko) * 2007-04-16 2009-01-09 주식회사 하이닉스반도체 비휘발성 메모리 소자 제조 방법
KR101217778B1 (ko) * 2007-06-08 2013-01-02 도쿄엘렉트론가부시키가이샤 패터닝 방법
SG11201602301WA (en) 2013-09-27 2016-04-28 Antonio Sanchez Amine substituted trisilylamine and tridisilylamine compounds
US11124876B2 (en) 2015-03-30 2021-09-21 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Si-containing film forming precursors and methods of using the same
US9777025B2 (en) 2015-03-30 2017-10-03 L'Air Liquide, Société pour l'Etude et l'Exploitation des Procédés Georges Claude Si-containing film forming precursors and methods of using the same
JP6814057B2 (ja) * 2017-01-27 2021-01-13 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム
CN111902918B (zh) 2018-04-27 2024-07-26 株式会社国际电气 半导体装置的制造方法、基板处理装置以及记录介质
TWI797640B (zh) 2020-06-18 2023-04-01 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 基於矽之自組裝單層組成物及使用該組成物之表面製備

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6338248A (ja) * 1986-08-04 1988-02-18 Hitachi Ltd 半導体装置およびその製造方法
JPH0660406B2 (ja) 1987-03-24 1994-08-10 日本電気株式会社 ハフニウム酸化膜の気相成長法
US6277436B1 (en) * 1997-11-26 2001-08-21 Advanced Technology Materials, Inc. Liquid delivery MOCVD process for deposition of high frequency dielectric materials
JP2001257344A (ja) * 2000-03-10 2001-09-21 Toshiba Corp 半導体装置及び半導体装置の製造方法
JP3851752B2 (ja) * 2000-03-27 2006-11-29 株式会社東芝 半導体装置の製造方法
KR100545706B1 (ko) * 2000-06-28 2006-01-24 주식회사 하이닉스반도체 반도체 소자 제조방법
JP4644359B2 (ja) 2000-11-30 2011-03-02 ルネサスエレクトロニクス株式会社 成膜方法
US6486080B2 (en) 2000-11-30 2002-11-26 Chartered Semiconductor Manufacturing Ltd. Method to form zirconium oxide and hafnium oxide for high dielectric constant materials
JP3773448B2 (ja) 2001-06-21 2006-05-10 松下電器産業株式会社 半導体装置
US6960537B2 (en) * 2001-10-02 2005-11-01 Asm America, Inc. Incorporation of nitrogen into high k dielectric film
JP4102072B2 (ja) * 2002-01-08 2008-06-18 株式会社東芝 半導体装置
JP2003258243A (ja) 2002-02-28 2003-09-12 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法

Also Published As

Publication number Publication date
KR100944831B1 (ko) 2010-03-03
TW200526804A (en) 2005-08-16
KR20050041930A (ko) 2005-05-04
US7084023B2 (en) 2006-08-01
US20050142716A1 (en) 2005-06-30

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MM4A Annulment or lapse of patent due to non-payment of fees