JP2010512668A5 - - Google Patents
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- Publication number
- JP2010512668A5 JP2010512668A5 JP2009541506A JP2009541506A JP2010512668A5 JP 2010512668 A5 JP2010512668 A5 JP 2010512668A5 JP 2009541506 A JP2009541506 A JP 2009541506A JP 2009541506 A JP2009541506 A JP 2009541506A JP 2010512668 A5 JP2010512668 A5 JP 2010512668A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- source
- process chamber
- forming
- phosphorus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims 28
- 239000000758 substrate Substances 0.000 claims 13
- 229910052799 carbon Inorganic materials 0.000 claims 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 6
- 239000013078 crystal Substances 0.000 claims 6
- 229910052698 phosphorus Inorganic materials 0.000 claims 6
- 239000011574 phosphorus Substances 0.000 claims 6
- 238000005530 etching Methods 0.000 claims 5
- 229910052710 silicon Inorganic materials 0.000 claims 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/609,826 US8394196B2 (en) | 2006-12-12 | 2006-12-12 | Formation of in-situ phosphorus doped epitaxial layer containing silicon and carbon |
| PCT/US2007/086984 WO2008073894A1 (en) | 2006-12-12 | 2007-12-10 | Formation of in-situ phosphorus doped epitaxial layer containing silicon and carbon |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012207133A Division JP5551745B2 (ja) | 2006-12-12 | 2012-09-20 | シリコンと炭素を含有するインサイチュリンドープエピタキシャル層の形成 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010512668A JP2010512668A (ja) | 2010-04-22 |
| JP2010512668A5 true JP2010512668A5 (enExample) | 2010-12-02 |
Family
ID=39498574
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009541506A Pending JP2010512668A (ja) | 2006-12-12 | 2007-12-10 | シリコンと炭素を含有するインサイチュリンドープエピタキシャル層の形成 |
| JP2012207133A Active JP5551745B2 (ja) | 2006-12-12 | 2012-09-20 | シリコンと炭素を含有するインサイチュリンドープエピタキシャル層の形成 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012207133A Active JP5551745B2 (ja) | 2006-12-12 | 2012-09-20 | シリコンと炭素を含有するインサイチュリンドープエピタキシャル層の形成 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8394196B2 (enExample) |
| JP (2) | JP2010512668A (enExample) |
| TW (1) | TWI414006B (enExample) |
| WO (1) | WO2008073894A1 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5200371B2 (ja) * | 2006-12-01 | 2013-06-05 | 東京エレクトロン株式会社 | 成膜方法、半導体装置及び記憶媒体 |
| US8367548B2 (en) * | 2007-03-16 | 2013-02-05 | Asm America, Inc. | Stable silicide films and methods for making the same |
| DE102008030854B4 (de) * | 2008-06-30 | 2014-03-20 | Advanced Micro Devices, Inc. | MOS-Transistoren mit abgesenkten Drain- und Source-Bereichen und nicht-konformen Metallsilizidgebieten und Verfahren zum Herstellen der Transistoren |
| US7994015B2 (en) | 2009-04-21 | 2011-08-09 | Applied Materials, Inc. | NMOS transistor devices and methods for fabricating same |
| US8999798B2 (en) * | 2009-12-17 | 2015-04-07 | Applied Materials, Inc. | Methods for forming NMOS EPI layers |
| US8598003B2 (en) | 2009-12-21 | 2013-12-03 | Intel Corporation | Semiconductor device having doped epitaxial region and its methods of fabrication |
| WO2012102755A1 (en) * | 2011-01-28 | 2012-08-02 | Applied Materials, Inc. | Carbon addition for low resistivity in situ doped silicon epitaxy |
| WO2012108901A1 (en) * | 2011-02-08 | 2012-08-16 | Applied Materials, Inc. | Epitaxy of high tensile silicon alloy for tensile strain applications |
| KR102534730B1 (ko) | 2015-04-10 | 2023-05-26 | 어플라이드 머티어리얼스, 인코포레이티드 | 선택적 에피택셜 성장을 위한 성장률을 증강시키기 위한 방법 |
| KR102742581B1 (ko) | 2019-09-24 | 2024-12-13 | 삼성전자주식회사 | 반도체 소자 및 이의 제조 방법 |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5177677A (en) * | 1989-03-08 | 1993-01-05 | Hitachi, Ltd. | Power conversion system |
| US5186718A (en) | 1989-05-19 | 1993-02-16 | Applied Materials, Inc. | Staged-vacuum wafer processing system and method |
| US5108792A (en) | 1990-03-09 | 1992-04-28 | Applied Materials, Inc. | Double-dome reactor for semiconductor processing |
| US5179677A (en) | 1990-08-16 | 1993-01-12 | Applied Materials, Inc. | Apparatus and method for substrate heating utilizing various infrared means to achieve uniform intensity |
| KR100815009B1 (ko) * | 2000-09-28 | 2008-03-18 | 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 | 산화물, 규산염 및 인산염의 증기를 이용한 석출 |
| US6426265B1 (en) * | 2001-01-30 | 2002-07-30 | International Business Machines Corporation | Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology |
| AU2002306436A1 (en) * | 2001-02-12 | 2002-10-15 | Asm America, Inc. | Improved process for deposition of semiconductor films |
| KR100713904B1 (ko) | 2001-06-29 | 2007-05-07 | 주식회사 하이닉스반도체 | 반도체소자의 제조방법 |
| US6916398B2 (en) | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
| KR100473476B1 (ko) | 2002-07-04 | 2005-03-10 | 삼성전자주식회사 | 반도체 장치 및 그 제조방법 |
| US6897131B2 (en) | 2002-09-20 | 2005-05-24 | Applied Materials, Inc. | Advances in spike anneal processes for ultra shallow junctions |
| US6803297B2 (en) | 2002-09-20 | 2004-10-12 | Applied Materials, Inc. | Optimal spike anneal ambient |
| US7540920B2 (en) * | 2002-10-18 | 2009-06-02 | Applied Materials, Inc. | Silicon-containing layer deposition with silicon compounds |
| US6998305B2 (en) * | 2003-01-24 | 2006-02-14 | Asm America, Inc. | Enhanced selectivity for epitaxial deposition |
| US6998153B2 (en) | 2003-01-27 | 2006-02-14 | Applied Materials, Inc. | Suppression of NiSi2 formation in a nickel salicide process using a pre-silicide nitrogen plasma |
| JP4139306B2 (ja) * | 2003-10-02 | 2008-08-27 | 東洋炭素株式会社 | 縦型ホットウォールＣＶＤエピタキシャル装置及びＳｉＣエピタキシャル成長方法 |
| US7132338B2 (en) * | 2003-10-10 | 2006-11-07 | Applied Materials, Inc. | Methods to fabricate MOSFET devices using selective deposition process |
| US7166528B2 (en) | 2003-10-10 | 2007-01-23 | Applied Materials, Inc. | Methods of selective deposition of heavily doped epitaxial SiGe |
| WO2005116304A2 (en) | 2004-04-23 | 2005-12-08 | Asm America, Inc. | In situ doped epitaxial films |
| US20050241671A1 (en) * | 2004-04-29 | 2005-11-03 | Dong Chun C | Method for removing a substance from a substrate using electron attachment |
| US7196005B2 (en) * | 2004-09-03 | 2007-03-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Dual damascene process with dummy features |
| US7560352B2 (en) * | 2004-12-01 | 2009-07-14 | Applied Materials, Inc. | Selective deposition |
| US7682940B2 (en) | 2004-12-01 | 2010-03-23 | Applied Materials, Inc. | Use of Cl2 and/or HCl during silicon epitaxial film formation |
| US7312128B2 (en) * | 2004-12-01 | 2007-12-25 | Applied Materials, Inc. | Selective epitaxy process with alternating gas supply |
| US7195985B2 (en) * | 2005-01-04 | 2007-03-27 | Intel Corporation | CMOS transistor junction regions formed by a CVD etching and deposition sequence |
| US7687383B2 (en) | 2005-02-04 | 2010-03-30 | Asm America, Inc. | Methods of depositing electrically active doped crystalline Si-containing films |
| JP2006253617A (ja) * | 2005-02-14 | 2006-09-21 | Toshiba Ceramics Co Ltd | ＳｉＣ半導体およびその製造方法 |
| KR101193453B1 (ko) * | 2006-07-31 | 2012-10-24 | 비쉐이-실리코닉스 | 실리콘 카바이드 쇼트키 다이오드를 위한 몰리브덴 장벽 금속 및 제조방법 |
| US8124473B2 (en) * | 2007-04-12 | 2012-02-28 | Advanced Micro Devices, Inc. | Strain enhanced semiconductor devices and methods for their fabrication |
| US20080283926A1 (en) * | 2007-05-18 | 2008-11-20 | Texas Instruments Incorporated | Method for integrating silicon germanium and carbon doped silicon within a strained cmos flow |
-
2006
- 2006-12-12 US US11/609,826 patent/US8394196B2/en active Active
-
2007
- 2007-12-10 JP JP2009541506A patent/JP2010512668A/ja active Pending
- 2007-12-10 WO PCT/US2007/086984 patent/WO2008073894A1/en not_active Ceased
- 2007-12-11 TW TW096147287A patent/TWI414006B/zh not_active IP Right Cessation
-
2012
- 2012-09-20 JP JP2012207133A patent/JP5551745B2/ja active Active
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