CN1135268A - 用于互联、插件和半导体组件的接触结构及其方法 - Google Patents

用于互联、插件和半导体组件的接触结构及其方法 Download PDF

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Publication number
CN1135268A
CN1135268A CN94194179A CN94194179A CN1135268A CN 1135268 A CN1135268 A CN 1135268A CN 94194179 A CN94194179 A CN 94194179A CN 94194179 A CN94194179 A CN 94194179A CN 1135268 A CN1135268 A CN 1135268A
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Prior art keywords
contact
chassis
substrate
contact structures
semiconductor device
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CN94194179A
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CN1045693C (zh
Inventor
伊戈尔·Y·汉德罗斯
加埃唐·L·马蒂厄
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FormFactor Inc
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FormFactor Inc
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Priority claimed from US08/152,812 external-priority patent/US5476211A/en
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    • H05K7/1053—Plug-in assemblages of components, e.g. IC sockets having interior leads
    • H05K7/1061—Plug-in assemblages of components, e.g. IC sockets having interior leads co-operating by abutting
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Abstract

一种互联接触结构组件包括一电子元件，该电子元件有一表面和在该表面可触及的一导电接触。接触结构包括一具有第一和第二端的内柔性细长元件，第一端在所述导电接触端的表面形成第一紧密结合点而无需用另外的连接材料。一导电壳体由至少一层包封柔性细长元件的导电的材料组成，同时在紧邻第一紧密结合点的至少一部分导电接触端形成第二紧密结合点。

Description

用于互联、插件和半导体组件的接触结构及其方法
本申请是1993年11月16日申请的NO.08/152,812专利申请的部分继续。本发明涉及一种互联接触结构、插件、半导体组件和使用它们的封装件及其制造方法。
此前多种类型的用于半导体器件的互联具有某种或多种缺点，限制了它们在半导体工业的广泛应用。因此，需要新型的和改进的互联接触结构克服这些缺点，这在半导体组件和封装件中特别有用，并能在半导体工业领域广泛应用。
总的来讲，本发明的目的之一是提供一种接触结构、插件、一种半导体组件和使用它们的封装件及其制造方法，使得能把接触结构和特别是弹性接触结构直接连接于有源硅器件。
本发明的目的之二是提供一接触结构、插件、一半导体组件和使用它们的封装件及其制造方法，使得对于在测试基片进行老化试验(burn-in)时在焊盘或底盘(pad)上形成临时接触。
本发明的目的之三是提供一接触结构、插件、一半导体组件和上述特征的方法，使得能利用接触结构在不同于其末端点的起始点的间隙或间距。
本发明的目的之四是提供一接触结构、插件、一半导体组件和方法，该方法采用能形成三维输出的交错接触结构。
本发明的目的之五是提供一接触结构、插件、一半导体组件和上述特征的方法，使得接触结构可处区域阵列、周围、边缘或中心线底盘输出端的底盘上。
本发明的目的之六是提供一接触结构、插件、一半导体组件和上述特征的方法，对于一侧边缘的底盘出线，能以一种方式实现，它允许在SIMM和其他印制板(card)上形成小间距边缘的芯片安装。
本发明的目的之七是提供一接触结构、插件、一半导体组件和上述特征的方法，使得能在薄片或单一化形式中的器件上安装接触(点)。
本发明的目的之八是提供一接触结构、插件、一半导体组件和方法，其中用自动化设备完成接触连接。
本发明的目的之九是提供一接触结构、插件、一半导体组件和方法，使得能采用底部芯片电容器以节省有效面积。
本发明的目的之十是提供一接触结构、插件、一半导体组件和上述特征的方法，用来提供一个以上的、在两侧分布有用于印制板的硅(card ready silicon)、可选择地与弹性接触结构互联的基片初始母体。
从下文结合附图对较佳实施例的描述，本发明的其他目的和特征将会更清楚。
图1是本发明一“骨架和肌肉”接触结构的部分立体图，其中接触结构为一独立式销针形式。
图2是类似于图1的部分立体图，但它示出具有一弯道的弹性接触结构。
图3是一剖面侧视图，它示出一具有多个弯道和多层壳体的接触结构。
图4是本发明另一实施例的接触结构的剖面侧视图，其中壳体有诸突起部分。
图5是本发明另一实施例的接触结构的剖面侧视图，其中接触结构的弯道部分被一顺从合成橡胶的导电层一起缩短。
图6是本发明另一个接触结构的剖面立体图，该接触结构连同印刷线路板中的金属化通孔一起使用。
图7是本发明另一实施例的接触结构的剖面立体图，该接触结构连同印刷线路板中的金属化通孔一起使用，其中一弹性接触结构在印刷线路板的一侧，而在另一侧有一个不需要有弹性的接触结构。
图8是本发明另一接触结构的剖面侧视图，其中多个图1所示类型的杆被一焊料层桥接在一起以形成一焊料柱结构。
图9是本发明一接触结构的剖面侧视立体图，图中每个接触端有两个冗余(two redundant)弹性顺从接触结构。
图10是本发明另一个接触结构的剖面侧视立体图，图中三个弹性接触结构通过在最顶点和在最下端的焊料层而桥接在一起，而中间弯曲部分没有焊料，从而提供一顺从焊料柱。
图11是本发明另一实施例的接触结构的剖面侧视图，图中接触结构伸出基体的一边缘以形成一探针接触。
图12是本发明另一接触结构的剖面侧视图，该接触结构使用了一屏蔽接触探针。
图13是本发明另一接触结构的剖视部分立体图，图中接触结构在接触结构承载体如一印刷线路板的一侧，其中一个接触结构穿过一孔到另一侧，而另一个接触结构从同一侧伸出。
图14是本发明另一实施例的接触结构的侧视图和立体图的组合，图中探针有一个末端，其外形能够使当末端与另一个接触端连接时接触电阻最小。
图15是一个类似于图14的视图，但图中采用了一悬臂接触。
图16是本发明一接触结构的剖面的部分立体图，图中的接触结构形成环路。
图17是类似于图16的视图，但示出了每个接触底盘的两个环路和桥接所述环路以形成一焊料柱的焊料层。
图18是一个剖面的部分立体图，它示出了本发明的一个接触结构，图中的接触结构有一个围栏，该围栏象围墙一样用于封闭一粗大的诸如用作热互联的焊料柱。
图19是一个剖面的部分立体图，它示出本发明的一个插件。
图20是一个剖面的部分立体图，它示出一双面插件。
图21是本发明另一个插件的剖面部分立体图，其中的一侧有弹性接触结构，而在另一侧有可焊接触。
图22是本发明另一个实施例的剖面部分立体图，它采用双面弹性顺从接触结构和托脚(standoffs)。
图23是本发明一有源半导体组件的剖面部分立体图。
图24是具有定位销的错列接触结构的剖面部分立体图。
图25是本发明一半导体封装件的剖面侧视图，它示出一双面反装芯片的连接。
图26是本发明一半导体封装件的剖面侧视图。
图27是本发明另一实施例的半导体封装件的剖面侧视图，该实施例采用了可拆除的接触结构。
图28是本发明另一实施例的半导体封装件的剖面侧视图，该实施例采用了可拆互联的弹性接触结构和金属化通孔。
图29是本发明另一个采用锁定弹簧的半导体封装件的剖面侧视图。
图30是本发明另一个采用定位销的半导体封装件的剖面侧视图。
图31是本发明另一个装有电容器的半导体封装件的剖面侧视图。
图32是本发明另一个安装多个电容器的半导体封装件的剖面侧视图。
图33是本发明另一个采用一去耦电容器的半导体封装件的剖面侧视图。
图34是本发明另一个采用一母板的半导体封装件的剖面侧视图。
图35是本发明另一个采用一插件的半导体封装件的剖面侧视图。
图36是本发明一采用互联基片的半导体封装件的剖面部分立体图。
图37是一个含有四层呈双面初始母体形式的半导体器件的半导体封装件的侧视图。
图38是本发明一半导体封装件的剖面侧视图，图中示出垂直堆放的硅芯片。
总的来讲，本发明的接触结构用于一种具有一电子元件的器件，该电子元件有一个表面和一个可从该电子元件表面接近或触及的导电接触底盘，该底盘也有一个表面。一导电柔性细长元件有第一和第二端。提供一种装置，用于把第一端连接或粘附到接触底盘以形成一其第二端自由的第一紧密结合。一导电壳体包封柔性细长元件，至少一部分接触底盘的表面直接靠近把第一端连接或粘附到接触底盘以提供一第二紧密结合的装置，使得在接触底盘与导电壳体之间的连接或粘附强度大于在接触底盘与柔性细长元件之间的连接或粘附强度。
尤其如附图所示，图1中的接触结构101用于接触一电子元件102，例如是一种装有一个或多个半导体器件的由塑料薄膜、陶瓷或硅封装的有源或无源半导体器件。电子元件还可以是一种互联元件如一种连接器。或者，它可以是一种用于半导体封装件或半导体器件的制造、测试和老化试验的插座。在任何情况下，还可称作支承结构的电子元件102被用来安装接触结构101。电子元件有一个或多个一般在一表面104的平面或从或通过电子元件102的表面104可接近或触及的导电接触底盘103，而底盘103位于各种部位并在各种角度的各种平面中。底盘103可以设置在电子元件102的圆周上，也可放置在一区域阵列、一边缘附近或一中心线或为本技术领域的普通技术人员所熟知的上述方法的组合。一般来讲，每个底盘103有其自身的电气功能。在某些应用场合中，诸接触底盘103实际上可在不同的平面中，或在一元件的边缘上面，它可具有任何所需的几何形状，例如可设计成圆形的或矩形，并具有暴露的表面105。作为例子的底盘103有各种尺寸，但其范围一般从2至50密耳。
接触结构101包括一细长元件106，由于其直径小，因而易于成为柔性的，其柔性程度适于形状的改变，并有第一和第二端107和108。该细长元件也可称作芯线或“骨架”。细长元件106由一合适的导电材料如具有少量其他金属例如铍、镉、硅和锰的金、铝或铜形成，以获得所需的物理性能。此外，还可采用金属或诸如铂组金属的合金。或者用铅、锡、铟或它们的合金来形成细长元件。细长元件的直径范围为0.25至10密耳，最佳直径为0.5至3密耳，其长度根据需要任选，但长度一般与其在小的几何形半导体器件中的使用成比例，其封装范围应为10至500密耳。
提供一种装置，用于在导电细长元件106的第一端107与一个接触底盘103之间形成一第一紧密结合。可用任一合适的手段形成这种连接，例如，采用一毛细管(图未示)而且在毛细管中穿有细长元件106、特别是在第一端有一个圆球的一线材结合点与底盘103接合，从而在压力和温度或超声波能的作用下，形成了把细长元件106的第一端107连接于底盘103的一线材结合点、特别是圆球形结合点111。所需线材结合点形成之后，毛细管上升到细长元件106一所需的长度，使之从毛细管中伸出来，通过局部熔化线材而后切断细长元件106并在细长元件106的第二端108形成一圆球112，同时还在位于毛细管中的其余段的细长元件106提供一对应的圆球，所以如果需要的话，采用同样的线材粘结机与下一个底盘形成一圆球形结合连接，从而形成另一个接触结构。或者采用楔形结合点。
根据本发明，一也可称为“肌肉”并覆盖“骨架”的导电壳体116在细长元件106的外面形成并完全包围该细长元件106以及接触底盘103的表面105，导电壳体116直接包围线材结合点111并最好遍布接触底盘103，从而通过对接触底盘的整个暴露面的直接连接对该接触底盘103形成一第二紧密结合。从而，接触结构101通过第一和第二紧密结合固定于接触底盘103。壳体116除有导电性能外还有在下文所要描述的复合接触结构101所希望有的其他机械性能。
壳体116由一种能为接触结构提供所需机械性能的材料形成。壳体材料原则上应该是一种具有至少30,000磅/平方英寸的高屈服强度的材料。对于本发明的接触结构，在接触结构101与接触底盘103之间的粘结强度原则上比壳体116与接触底盘103之间的粘接强度大50％。壳体116的壁厚一般在0.20至20密耳之间，最好在0.25至10密耳之间。本发明的壳体116沿细长元件或骨架106的长度粘附于其上同时连接至接触底盘103的表面，以有效提供一完整的结构。一般来讲，细长元件或骨架106的硬度比壳体材料的硬度小。当希望有一种塑性变形的接触结构时，壳体116由一种导电材料如铜或焊料比如铅锡焊料所形成。当希望壳体116有弹性性能时，可以使用镍、铁、钴或其合金。在某些应用中能为壳体116提供所需性能的其他材料有：铜、镍、钴、锡、硼、含磷的(phosphorous)、铬、钨、钼、铟、铯、锑、金、银、铑、钯、铂、钌以及它们的合金。一般来讲，如果需要的话，壳体中的顶层由金、银、金属或铂组金属的合金或各种焊料合金组成。当在一定的镀槽条件下电镀时，某些在细长元件106上的材料如镍将会形成内压应力，从而增加了变形或打破一最终接触结构101所需要的应力。某些材料如镍能提供超过80,000磅/平方英寸的抗拉强度。
由上述所列的一种或多种材料组成的壳体或“肌肉”116通常用传统的含水电镀金属形成于柔性细长元件或“骨架”上。还可通过采用在传统的薄膜工艺中所使用的物理或化学的蒸发沉积技术来提供壳体116，所述传统的薄膜工艺包括采用气体、液体或固体前身或初始母体的电解工艺以及蒸发或喷镀。
从中可以了解到，接触结构101所希望有的最终的性能能容易地设计进由骨架106和肌肉116组成的接触结构101，只要能达到所希望的导电率和其他物理性能，如与接触底盘103一起形成的第一和第二紧密结合的所需要的拉伸强度或连接。完全包封柔性细长元件或骨架106的壳体或肌肉116在接触底盘103之上与之一起形成第二连接结合。
在上述说明中描述了一单个的接触结构101。然而应能理解的是，在一单个的电子元件或多个这种电子元件上进行电镀或沉积加工期间，可同时形成上百个接触结构101。
如图所示，壳体116在其整个长度上的以及在接触底盘103之上的厚度基本上是均匀的。另一方面，壳体116的厚度通过调整组成壳体的诸层的种类或改变沉积参数而有所改变。接触结构或销101的最上面的自由端为了映出通常在壳体116下面的细长元件106第二端或自由端的圆球形状而只略大一点。应予以理解的是，如果需要，可以采用切割连续线材的装置而不是用熔化技术来去掉在细长元件106的第二端的圆球112。从而，第二端将会是其直径与细长元件106相同的基本上呈圆柱形的部件。
当希望一接触结构具有弹性时，可采用图2所示的接触结构121。接触结构121包括由与图1所示的细长元件106相同的导电材料形成的软细长导电元件122。细长导电元件有第一和第二端123和124以及一在第一端123上的并以与圆球结合点111相同的方式粘结于底盘103上的圆球形结合点126。当细长导电元件122通过焊接机的毛细管正在卸料时，一悬臂或悬臂部分122a形成一弯道。从而提供一形成在至少一个悬臂部分的弯道。这种悬臂部分为将在下文描述的接触结构121中提供弹性功能。弯道122a形成后，通过一适当的切割加工在第二端124形成顶端127。此后以与上文所描述的壳体116的相同方式在细长导电元件122形成壳体131以包围细长导电元件122，并在接触底盘103之上连接于该接触底盘103。可以理解，可以采用多种形状而不只是图2中所示的那一种。
为了把附加的强度传给接触结构121，壳体131主要由能给出高屈服强化性能的材料，如坚固的、导电的、硬的材料形成，其厚度如上文结合图1所描述的那样。这种材料从镍、钴、铁、含磷的、硼、铜、钨、钼、钌、铬、铑、铅、锡和它们的合金中选择。
从接触结构121中可以看出，细长导电元件122确定了接触结构121的轨迹或形状，而壳体131确定了接触结构的机械和物理性能，如接触结构的弹性或弹性变形以及通过贵重的顶层(noble toplayer)提供低阻弹性负载接触的能力。从图2中看到，当接触结构121的第二或自由端上下移动时，悬臂或弯道122a能快速适应第二自由端的位置变化，而且会回弹，并提供一个基本上恒定的、在一给定的试图使接触结构121的第二端回到其原始位置的设计范围内的屈服力。以一弹性方式设计弹簧形状以响应指向相对于电子元件102表面的任何角度的力
图3示出本发明另一个接触结构136，图中一软细长导电元件137有两个弯道137a和137b以及在一端的圆球结合点138和在另一端的圆球139。如图所示，弯道137a和137b面向相反的方向。具有一个上文所述类型的壳体141。然而，它是由一第一层或内层142和第二层或外层143组成。作为例子，第一层或内层142可采取具有合适厚度如1至3密耳的镍或镍合金覆盖层的形式以便为接触结构提供所希望有的弹性和/或屈服强度。假定需要为接触结构136提供一特别的外表面，则第二层或外层143由金或其他合适的导电材料组成。在某些场合中，可以采用第一层或内层142作为一阻挡层(barrier layer)，例如采用具有焊料接触的接触结构136以避免金与焊料的相互作用。在这种应用场合中，可以使软细长导电元件137镀上一后面有1至1.5密耳的焊料如铅锡合金的铜或镍薄层。从而可以看到，通过形成两层以上的壳体，就可获得接触结构所需要的附加特征。还应该了解的是，如果愿意，在某些应用场合，附加层作为壳体的一部分提供。
图4示出本发明另一个接触结构146，图中：一柔性细长导电元件147有一面向外面的弯道147a，一壳体148包封软细长导电元件147。然而在此情况下，壳体148以这样一种方式形成，即在壳体148的外表面沿其纵向长度形成诸微突起。这些突起以多种途径形成，如在电镀槽中调整加工条件以在壳体148中形成尖状物。
图5示出本发明另一接触结构151，它包括一其上有一壳体153的柔性细长元件152，其上有一个呈U形弯道152a的悬臂部分。为了降低电流在接触结构151中传导期间的电感应，把弯道152埋入一合适类型的如具有银粒子的硅橡胶的导电顺从(electrically con-ductive compliant)聚合物体154。导电顺从的合成橡胶154基本上不会制约接触结构151的弹性部分152a的移动。材料154的导电率范围一般在10-2至10-6欧姆厘米之间。
在图6中，在一为传统的印刷电路板156形式的电子元件中采用类似于图2所示类型的接触结构155。印刷电路板156有呈金属化通孔(plated-through hole)157形式的垂直通路导体，其中一镀层结构158穿过孔157并在印刷线路板156的相对两个表面形圆环159，以致从线路板156的一侧到该线路板的另一侧形成电接触。如图所示，在印刷线路板156的每一侧都有一接触结构155，并与形成环159起接触底盘作用的电镀结构158接触。从而，接触结构155可用来在位于两个电子元件的接触底盘之间形成一电连接，电子元件面对在金属化通孔157相对侧的印刷线路板156的每一侧。可以看到，作为接触结构155的一部分的壳体131还穿过金属化通孔157并设置在位于金属化通孔157两侧的环状电镀结构158上。这种结构只要在接触结构155的柔性细长元件的装配过程中把印刷线路板156从一侧倒转至另一侧就能方便地制成。如下文所要描述的，这种类型的结构可用于有关的插件。通过采用接触结构155，在印刷线路板的相对侧提供顺性能力(compliance capabilites)就可通过装有图6所示的接触结构的插件在诸电子元件的匹配底盘之间形成面对面的连接。
当只在一侧需要顺性，采用图7中所示的结构，在这个实施例中，如在图7中所示的底侧的接触结构161包括柔性细长元件162，柔性细长元件162有一个固定于金属化层158的呈圆球结合的第一结合点163。接触结构161形成一个越过孔157的环路，并通过一合适的手段如本领域的普通技术人员所知道的呈楔形结合的一第二结合点164，采用在半导体工业中所使用的焊接机，把接触结构161连接或粘结于环159的另一侧。柔性细长元件162被一种由上文所述的材料所制成的壳体166所覆盖。还应该理解，由于在电子元件156的下侧不需要顺性，接触结构161可被如图1中所示的直的销状接触结构101所替代。
图8是本发明另一实施例的接触结构171，该接触结构用于形成一焊料柱(solder column)。接触结构171是一种混合接触结构，它由三个图1中所示类型的“骨架”结构106组成，它们基本上以空间相隔120°安装在一单个接触底盘103上。三个“骨架”结构106制成后，一第一连续壳体层172沉积于细长“骨架”106和导电底盘103上，以形成类似于接触结构101的接触结构。然后在接触结构之间放置焊料层使此结构成为一焊料柱。焊料是一种适宜种类如铅和锡的合金，并且在销状接触结构与端部103的涂层表面之间桥接以形成焊料柱接触结构171。根据焊料柱的使用，焊料柱可以有多种尺寸，例如其直径范围为10至50密耳，最好是10至20密耳。这些焊料柱有一个适当的高度，例如为10至200密耳，最好是20至150密耳。如前所述，如果需要的话，用非熔化切割加工来去掉接触结构101的圆球112。
图9中所示的是一混合接触结构176，它有两个装在一单个底盘103上的接触结构177其悬臂部分177a和177b面对相对方向，从而为每一个接触底盘提供双冗余弹性顺从接触结构177。
图10是另一个混合接触结构181，图中，焊料182供桥接接触结构177的上端和下端但不桥接接触结构121具有弯道177a和177b的那部分，从而仍然保留顺性。对于这样一种结构，还应了解的是，在呈120°空间配置的三个这种接触结构177之间有焊料182，而且为了形成一焊接接触，接触结构177不必有弹性。
图11是本发明另一实施例的探针状接触结构186。它包括一其一端固定于接触底盘103的柔性细长元件187。柔性细长元件187有一个弯曲的悬臂部分187a。另一部分187b朝下伸过电子元件102一边缘或者穿过上文所述类型的引线孔(feed-through hole)，而用合适的方法楔结结于一牺牲金属层188，例如牺牲金属层为通过用作一支撑(standoff)的厚光刻胶189固定至元件102上的铝层。该步骤完成后，通过用一合适的腐蚀剂如氢氧化钠腐蚀铝层188而把该铝层牺牲掉。然后以上文所述的方法使柔性细长元件187镀上一由镍钴合金或其他如上文所述的合适材料形成的壳体190，以提供一其弯曲的末端在一元件102下面的位置的独立弹簧状接触结构186。壳体190所使用的材料能控制探针接触结构自由端的偏移特征。或者，可在壳体190完成之后再腐蚀掉牺牲层188。还应该理解，细长元件在端部103的结合点可以是楔形的，而在牺牲结构188的结合点可以是圆球形结合点。
图12是另一个探针接触结构191，它有一个通过结合点193粘结于接触底盘103的柔性细长元件192。如在前面的实施例那样，柔性细长元件192有一悬臂或弯道192a和一部段192b。部段192b越过边缘194或穿过一设置在元件102的孔。一壳体195在柔性细长元件192的外面。在壳体195的外面有附加层，附加层由以介质材料形成的外面有一金属层197的一层196所组成。如果层197接地，就有为一屏蔽接触提供控制的阻抗的探针接触结构191。因此，就可以在需要或必须屏蔽的系统中使用探针接触结构191以改进探测结构的电气性能。如图12所示，探针接触结构191的最末端去掉介质层196和金属层197，以便与其他的接触底盘或结构形成直接接触。
图13示出本发明另一实施例的接触结构201，其中印刷线路板形式的电子元件202可用作将在下文中描述的一插件。如前面的实施例那样，它有一个被镀层包围的孔203以提供接触底盘204。接触结构201的类型如上文所述，它有一个在电子元件202的一侧向上延伸的部段206和向下穿过孔203到电子元件202另一侧的另一个部段207。部段207被暂时连接于一如上文所述通过腐蚀而被去掉的牺牲基体(图未示)。有了这种结构，可以看出从电子元件202的两侧形成电连接。
图14示出本发明另一个实施例的接触结构211，其中在构造过程中采用一牺牲铝层212。在需要于铝层212上形成一接触底盘的区域中，在铝层212的表面形成多个负突出(negative projections)或孔213。如图所示，这些负突出或孔213呈倒置的终端在顶点的棱锥体。然后在铝中的负突出或孔213装填上诸如金或铑的导电材料214。随后是一镍层216和一金层217。接着由一合适材料如金或铝形成的软细长导电元件218通过一适当的手段如一结合点219而被连接于金层217。柔性细长元件218穿过弯道218a，然后转到电子元件102的一侧并延伸到接触底盘103的顶部，用一合适的手段如结合点220而连接于接触底盘103。此后，由上文所述类型的弹性合金材料形成的一壳体221在柔性细长元件218上沉积并遍布接触底盘103和金层217，从而完成接触结构。通过壳体221的性能和弯道218的轨迹的适当组合，就能获得所需要的弹性。
在电镀过程中，用本技术领域的技术人员所熟知的方法使牺牲铝层212覆盖有一合适的保护膜。接触结构完成后，去掉保护膜并以上文所描述的方法融化牺牲铝层212，以在接触结构211的自由端提供一接触底盘224。从这个方法中可以知道，接触底盘可以构造成一个可控制的几何形状如具有多个尖端，这些尖端能施加局部高压力以接触另外的底盘如在一半导体器件上的铝底盘，从而弄破在铝底盘上的任何氧化层，通过铝底盘在诸尖端周围的变形而在它们之间形成良好的电接触。在接触底盘224上施加一较小的力就能形成这些大的接触力。
图15示出了本发明的另一个接触结构，图中示出了一个装在接触结构226自由端的接触底盘227。接触底盘227有一个在矩形接触底盘227一端的机械成形的悬垂探针228。接触底盘227以类似于接触底盘224的方法构成，例子中的底盘有一个镍或铑尖端或探针228以及也是由镍或铑形成的一层229。层229覆盖有镍合金隔离层231，而隔离层231又覆盖有一金层232。一导电材料的柔性细长元件236通过一结合点237连接于底盘103，同时通过一悬臂或弯道236a越过半导体结构102的边缘而以一合适的方式如一结合点238连接于金层232。柔性细长元件236及结合点237和238外镀有一壳体239。壳体239是一种如上文所述类型的坚固合金并遍布底盘103和整个金层232。对于这种类型的接触结构226，一悬臂探针228能提高控制接触结构226的偏移-负荷特性(deflection ver-sus load behavior)的能力。
图16示出本发明另一个接触结构241。图中所示的接触结构弯成一个环路。采用一个导电材料的柔性细长元件242并以一个合适的方法如通过圆球结合点243把它粘结到接触底盘103一侧，然后使柔性细长元件变成一个总的呈“U”形的口朝下的环路242a，随后通过合适机构如一个楔形结合点244把柔性细长元件的另一端装到接触底盘243的一另侧，从而完成此环路。然后以上文所述方法在柔性细长元件上形成一壳体246，并在结合点244和243和接触底盘103的边缘上沉积。这样就可提供一比较坚固的接触结构241。应该了解，如果需要的话，在一个底盘103上能有一个以上的环路接触结构241。例如可以在同一个接触底盘103分开设置两个这种结构。
图17示出本发明另一个接触结构251，它由结合图16的上文所述的、分开放置并安装在同一个底盘103上的两个接触结构241组成，其中，一焊料层252在接触结构241上形成并桥接在接触结构241之间的U形空间。此外，焊料桥接两个分开的接触结构241以形成一整体的焊料凸缘253。应该了解如果需要的话，两个接触结构241可分开得足够远，以致焊料不能在两个接触结构241之间桥接，而仅仅在每个接触结构241形成的桥之间桥接以在一个底盘103上提供分开的焊料凸缘。
图18示出另一个接触结构256，图中，在半导体元件102或其它电子元件上有一个大的接触底盘103，在该底盘103的外周围放置多个上文所述类型的接触结构241。内细长元件或骨架的粘接从圆球结合点243开始，在连贯的环路之间有楔形结合点244以有效形成一封闭一空间的矩形围栏。然后内细长元件外镀一上文所述类型的壳体(图未示)。随后矩形围栏装填焊料(图未示)以提供一个在所需的地方用作一散热装置(heat sink)的独立焊料接点或一凸缘。
图19示出一插件301，它包括一有第一和第二平表面303和304的基片302。基片302有一个适当的厚度，如其范围为5至200密耳，最好是20至100密耳。它由一适当的材料如用作一绝缘体的模制塑料所形成，它有多个穿过第一表面303的分开设置的孔306和多个穿过第二表面304的分开设置的孔307。孔306和307的截面几何形状根据需要可任选如圆形。图中所示的孔306和307是不同圆心的图。因而，每个孔306和307有一个垂直于孔所穿过的表面延伸的直边壁部分308并包括一朝内朝下倾斜于孔的倾斜壁部分309。如图19所示，孔306和307成对排列，每一对的两个孔相互之间略有偏移并通过在两个孔之间延伸的通道311而互联，所以实际上有一个穿过基片302的单孔，在一侧的孔的一部分相对于穿过基片另一侧的部分偏移。从而用效地提供一用传统方法电镀的复合孔，如用于印刷线路板以提供一具有由一种诸如可选择地外面镀金的铜材料形成的镀层313的金属化通孔。由于在各对孔306和307之间存在偏移，在每个孔306和307的底部有一个平面台肩316，台肩上有镀层313。具有镀层313的台肩316形成区域，在该区域上形成上文所述类型以及如图2所示的顺从接触结构121。形成这种接触结构的壳体131的材料延伸至镀通复合孔312提供的镀层313以在接触结构121与镀层313之间形成良好的连接。
从图19中看到。接触结构有一个合适的长度使得它们的自由端伸出在基片302相对侧的平表面303和304，所以它们能如上文所述与电子元件接触。互连结构121的自由端能以合适的距离如10至20密耳，最好是20至100密耳分开间置。基片302可由多种类型的塑料形成。例如它们还可以是基于聚醚酰亚胺(polyetherimide)、聚砜或液晶聚合物的塑料模制材料。
在图19所示的结构中，成对的电极相互之间绝缘。然而很显然，如果需要的话，只要在侧边或表面303和304放置导电部分的镀层313以形成适当的互联，就能使成对的电极互连。例如，表面303和304的公同电镀部分表示电源面和接地面，它们可适当互联至电源和接地的连接点上。
图20示出一双面插件321，它包括一呈薄塑料片状由一诸如聚酰亚胺的合适材料形成的塑料基片322。在基片322中钻出或模制出多个分开设置的孔323。基片还可以是加固的环氧薄片如补充有玻璃纤维的环氧树脂，孔323穿过其中。上文所述类型的镀层324用于金属化通孔323并在基片322的顶侧形成金属化层326、在其底侧形成金属化层327，如图20所示。然而对于本发明，可以看到，如果需要的话，在基片322底侧的金属化层327可去掉。一类似于图13所示的接触结构201装在靠邻金属化通孔323的导电层326。此接触结构201包括一从基片322的一侧弹性延伸的接触结构121，而另一个接触结构201穿过孔323并伸出基片的另一侧，从而在该侧形成一个探针式接触。可以知道，如果需要的话，能在基片322上设置电路并使之连接于接触结构121和201。此外，在基片322中设置销子(图未示)以使插件321与其他电子元件对齐，如下文所述。
图21示出本发明另一个插件331，图中，弹性接触结构121在一基片332的一侧，而可焊接触334设置在基片的另一侧。在基片332中有若干金属化通孔或导体的垂直通道336。针对图7的上文所述类型的支承装置(standoff)161设置在基片332的另一侧并连接于镀层337，接触结构121和支承装置都装在镀层337上。因而知道，插件331提供形成插件一侧的弹性接触和插件另一侧的焊接支承装置或可焊接触的能力。
图22示出插件341，它有设置在具有金属化通孔343的一基片342的相对侧的双面弹性接触结构121和支承装置346。支承装置346呈环路形，它们装在在基片342上的金属化层347并可位于基片342上的任何部位。如图22所示，支承装置346的高度低于接触结构121的高度，所以在与接触结构121形成接触的电子元件施加过度压力的情况下，克服接触结构121的屈服力的内压缩移动将受到支承装置的制约。支承装置346以与上文所述的一个具有覆盖有一壳体的骨架的接触结构121相同的方法制成。然而应予以理解的是，在支承装置的柔性细长元件两端的结合点如果需要的话可以是楔形结合。
图23是本发明一有源半导体组件351。组件351包括一为硅基体的以本领域普通技术人员所熟知的方法构造的半导体器件352，具有内金属化层和内连接。它有一个被一钝化层354所覆盖的顶部敷铝合金353。多个上文所述类型的接触结构355穿过设置在钝化层354的孔356并与敷铝353接触。如图23所示，接触结构355的最上顶端以交错接触结构355的方法排成两列，而其中一列中接触结构355的顶端偏离于其它接触结构355的顶端，以提供一可三维输出的交错结构。在半导体器件352的铝底盘之间的距离用字母D表示，例子中的距离为5密耳。接触结构355的交错自由端的更大的距离在图23中用mD表示，例子中的距离为10或15密耳。为接触结构355的自由端提供不同的偏移就可方便地获得自由端的这种不同间距。由其中的接触结构355组成的一组接触结构355有比排成列的另外的接触结构121大的弯道，所以接触结构121的自由端偏移一段所需要的距离。这样可以看出，一具有大的底盘间距能够与另外的器件互联的半导体器件具有比较密集的几何结构。
如果需要，可提供可选择的密封剂357(见图23)，它遍布接触结构355的底基和复盖钝化层354的半导体器件352的表面。如果需要，密封剂357也可另外用在图23所示的接触结构355的下端以用来包封接触结构355的悬臂的下部分。如果需要，全部的接触结构355都可供以这种附加的密封剂357。所采用的密封剂357有助于避免或至少限制在组装工作期间对半导体器件的操作损坏。
图24示出本发明另一实施例的一半导体组件366，它包括具有形成接触底座或区域368的敷铝的有源半导体器件367。作为例子，有源半导体器件可以是一个存储芯片或微处理器。半导体器件367的大部分表面被一钝化层369所覆盖。用本领域的技术人员所熟知的方法如采用一光刻胶(photoresist)和一种合适的蚀刻在钝化层369中形成孔或开口371。孔371形成后，一连续短暂层(图未示)沉积于钝化层369和铝合金接触底盘368上。随后是敷以一光刻胶层(图未示)，之后在光刻胶形成与孔371对齐而直径大出0.5至5密耳，最好是大出1至3密耳的孔(图未示)。此后，以一合适材料如后面跟着金屋的镍层形式的金属化层376在孔371以及在光刻胶中的较大的孔中形成，之后以一传统方法去掉光刻胶而保留金属化层376，并腐蚀掉除在金属化层376下面区域之外的其余短暂层。如图24所示，金属化沉积的厚度为1至3密耳并形成一环状外伸部分376a。
类似于接触结构121的接触结构381设置在图所示环形金属化层376中，其柔性细长元件或骨架382圆球形连接于杯形金属化层376，其遍布环状外伸部分376a顶部的壳体383有效提供了一大直径盖子。或者，通过把骨架连接于孔371中、随后沉积壳体或肌肉而使接触结构381构造于孔371中，之后去掉光刻胶和腐蚀掉短暂金属层。
如图24所示，接触结构381有不同的构造，其中一部分有大的弯道，而另一部分则有小的弯道，具有大弯道的接触结构有长悬臂部分。接触结构381每隔一个向相反方向伸展，所以诸自由端有一个在相邻自由端之间的定为mD的间距，该间距mD不同于相邻接触结构381在盖子376之间的间距D。可以看出，由于为接触结构381提供不同的角度以及不同的形状，自由端可设置在平行于有源半导体器件367平面的一平面中，但在该平面中，自由端之间的间距显著不同于各个接触结构在其底基之间的间距，以便在自由端提供所需的间隔或节距。换句话讲，从图24中的半导体组件中可以了解到，可以某一间距把接触结构放置在一半导体器件上，而在该半导体器件上的接触结构的上自由端可有相同的或不同的间距。
图24示出，为方便于半导体组件366与其它的电子元件如印刷线路板等对齐，可提供定位销386，定位销386是在接触结构381形成的同时形成的。虽然图24示出单个定位销386，但应理解可在一半导体组件366上提供多个这种定位销。当金属化层376设置在钝化层369时，为了便于此类定位销386的形成，提供设置在适当位置的金属化层387，特别是设置在钝化层369上。然后在其它的接触结构381形成的同时形成由一骨架388和一壳体389组成的定位销386。从而看出，相对于接触结构381可容易地提供所需数量的定位销，而基本上不需要增加完成半导体组件366的费用。
有源半导体器件367通常被制成一晶片形式，例如直径为8英寸，晶片的厚度范围为15至30密耳最好是15至25密耳，尽管提供半导体组件的能力可薄至10密耳。对于图24所示的结构，提供伸出在一晶片上的每个单独集成电路的边缘或外边界的弹性接触结381是不可能的，所以要在冲切一晶片之前，连接晶片中的半导体器件。这种冲切过程一般称作单一化(singulation)，在这个过程中，晶片被冲切成单个的半导体器件。在有关半导体组件366的设计中，接触结构381最好以图23所示的方法定位，使得冲切需要一个最小的表面面积以提供所希望的单一化。这些进行切割的区域通常称为划片道(scribe streets)。通过交替在那些底盘上的接触结构381以形成如图24所示的偏移，就可获得有所增加的节距以形成对其它电子元件的互联。
因而知道，本发明的工艺可用于晶片状的半导体器件以及单个半导体器件。同样，对图24所示的结构，在用定位销386形成对接触结构的正确定位、电子元件与其配合的同时，形成与接触结构381的互联。
通过可屈服地使接触结构381的顶端与在一测试基片(图未示)上的匹配接触端形成压缩配合，使图24所示类型的一半导体组件366能在其全工作速度(full functional speed)被测试。这种测试不需要在一测试基片上装专用探针就能进行。为了确保在测试基片的诸接触端之间的良好接触，通过提供一在测试基片的接触底盘上的类似材料，导电壳体383可有一诸如金、铑或银的贵金属外层，从而形成一低阻接触。以前用测试探针接触具有氧化倾向的铝接点曾是必要的，最终形成高阻接触。
图24所示的结构除简化测试步骤之外，还能用于半导体器件的老化测试。因而，用相同的方法，半导体组件367能使它的接触结构381屈服地接触设置在一老化测试基片(图未示)上的、由与在测试基片上的接触底盘的相同材料形成的匹配接触底盘。当与老化测试基片接触的器件367被长时间试验时，能交替地暴露于高温和低温。对于这种老化测试，多个半导体器件367能用来填充一能接纳多个这种半导体器件367的老化测试板或基片，并通过下文关于图26和27所述类型的弹簧夹子而与其保持接触。通过使用对齐或定位销386，使半导体器件367与老化测试基片很容易对齐。以图24所示方法排列的半导体结构381的输出端负载能力(fan-out capabilities)有可能使在半导体器件367的接触底盘有一小间距，而使接触结构381顶端有一大的间距。由此可简化这种半导体器件与在测试和老化测试基片上的接触底盘的标准间距的对齐，从而可降低这种测试和老化测试基片的成本。
在半导体器件376上完成测试和老化试验步骤并且证实了器件的性能之后，通过去掉弹簧夹子而使器件从测试和/或老化测试基片中取下，此后，使接触结构381的自由端与在下文所述类型的互联结构上的匹配型接触底盘配合以提供一长久的互联。图24所示的接触结构输出端负载能力也使得在装于互联基片的接触底盘采用一不同于在半导体器件367上的接触底盘的间距成为可能。定位销386有利于形成所需要的对齐，同时简化了长久互联。
图25示出一半导体封装组件401。一装有电路的印刷线路(PC)板411安装在封装组件401内，在印刷线路板411的一侧有诸接触底盘412，在印刷线路板的另一侧有诸另外的接触底盘413。半导体器件416和417设置在印刷线路板的相对两侧并有以上文所述方法装在其上的弹性接触结构418，以提供一用可焊端连接于印刷线路板411的双面反装芯片。使组件通过一合适的炉子以使在弹性接触结构418的焊料与接触底盘412和413形成一焊料连接，从而使弹性接触结构418连接于接触底盘412和413。如本领域的普通技术人员所熟知的表面安装组件(surface mount assembly)技术，使用施加于接触底盘412和413的回流焊膏(reflowable solder paste)将进一步有助于这种过程。在印刷线路板411与半导体器件416和417之间设置由一合适的绝缘材料形成的密封剂419，以完成封装件。
图26示出本发明另一个半导体封装组件421，它包括一其相对两侧有底盘424和426的层状印刷线路板423。半导体器件427和428设置在PC板423的相对两侧并装有上文所述类型的接触结构429。通过固定于印刷线路板并夹住半导体器件427和428边缘的弹簧状夹子431，接触结构429被屈服地推进而与接触底盘424和426接触。这些弹簧状夹子431分布在半导体器件如一矩形半导体器件的周围，在两个相对边至少各设置两个这种弹簧状夹子431。如图所示的弹簧夹子431连接或粘附于在印刷线路板423上的接触底盘432上。每个夹子431有一个上文所述类型的以一合适方法如一圆球结合点连接于底盘432的柔性细长元件或骨架433。骨架433有弯道433a和433b以形成伸过半导体器件的一侧的弹簧夹子，如图27所示。一壳体434为夹子431提供一合适的加强或力量，从而增加弯道433a和433b的弹簧状或夹子状的特性以把半导体器件427和428夹在适当的位置。对于这种结构可以看出，具有接触结构429的半导体器件427和428被夹住而与接触底盘424和426紧密接触。这种结构使得接触结构429与接触底盘424和426对齐。当需取下半导体器件427和428时，仅需把弹簧夹子431往外推以释放装有接触结构429的半导体器件427和428，使接触结构429与接触底盘424和426脱离。
在接触结构的自由端或被配合的接触底盘有一焊料覆盖层，然后使组件通过一炉子，该焊料形成紧密包围接触结构自由端和底盘表面的连接体，仅在接触结构的长度留下一可选择的薄覆盖层，从而形成在X、Y、Z的三维方向顺从的连接。
图27示出另一个半导体封装组件441，它包括一PC板442或其它合适的基片，PC板442的表面上有分开设置的接触底盘443和444。接触结构446装在底盘443上，它由骨架447和壳体448所组成并以图示方法构成以提供一弹性接触结构。图26所示类型的弹簧夹子451固定于底盘444。如图27所示，一半导体器件452被夹在诸接触结构446的顶端之间并可移动地与在一上文所述类型的半导体器件452上的镀金属的杯形端453接合。从这个结构中可看到，只要推开弹簧夹子451就能取下半导体器件452，因为在接触结构446的终端或自由端与在半导体器件452上的接触端453之间没有焊料连接。对于图27所示的结构如果需要的话，接触结构446装于在半导体器件452的孔(well)453中，而接触结构446的自由端可移动地接合于在印刷线路板上的底盘443上，从而可获得基本上与图27所示的结构所得到的相同结果。应该了解，在弹簧夹子451的位置，外弹簧元件(图未示)可用于对于镀金属的孔453，施加弹性负荷于接触结构446。
图28示出另一个半导体封装件461，它特别适合用于其上穿有垂直通道导体或金属化通孔463的印刷线路板462。一半导体器件466有上文所述类型的弹性接触结构467。图中所示的接触结构467有多个弯道467a和467b，尤其在自由端的弯道467b，它们所对着的直径比在印刷线路板的金属化通孔463的直径大。因而如图28所示，当半导体器件定位得使接触结构467与金属化通孔对齐时，接触结构467被推进金属化通孔以在接触结构467与金属化通孔463的壁之间形成弹性负荷配合，从而在PC板462上的一可卸的或可移动的安装位置卡住半导体器件466，与金属化通孔形成电接触，以便形成从印刷线路板到外界的接触。
图29示出本发明的另一个半导体封装组件471，它有一个其中有多个分开设置的孔473的PC板472。在PC板的相对侧有诸分开设置的接触底盘476。半导体器件477和478分设在相对两侧，它们有诸上文所述类型接触结构481，该接触结构为弹性并具有适于与接触底盘476接合的自由端。也是上文所述类型的弹簧夹子486以上文所述的方法安装在半导体器件并定位于其上，使得它们与在印刷线路板472中的孔473对齐。如图所示，通过使弹簧夹子486穿过孔473、使部段486a接触印刷线路板的相对两侧，半导体器件477和478被夹到PC板472上。在这种连接中，可选择地在接触结构481的自由端与接触底盘476之间形成一焊料连接。或者如上文所述，形成自由端，以便它们与底盘476形成可移动的弹性接触。通过提供适于经弹性负荷摩擦地接触接触底盘476的自由端，能方便地形成这种结构。
图30示出本发明另一实施例的半导体封装组件491，其中的一PC板492有诸分开设置的孔493，并在延伸的位置上贯通。该实施例提供上文所述类型的半导体器件494和496，其上装有接触结构497。上文所述类型的类似定位销498装在半导体器件494和496上。
在组装半导体封装组件491的过程中，半导体器件496可以是一半导体芯片，可将其放置在一载体(图未示)上以便被自动操作，接着选择芯片并转到顶部，届时孔493与定位销498对齐。此后如图所示，将定位销498的顶端弯曲以夹住印刷线路板，使之与半导体器件496接合。这半导体器件496的中间组件和印刷线路板492被反过来。此后，将第二半导体器件494置于印刷线路板492的顶部并翻转过来，使得定位销498与在一印刷线路板中的其他的孔493对齐，然后将其伸入孔493中，使得在其上的接触结构497与在印刷线路板上的接触底盘499接合。为了附加地在对齐的条件下有助于夹持住诸部件，可有选择地把一具有适当溶剂的合适类型的粘结剂501放在印刷线路板492与半导体器件494之间，该粘结剂由于溶剂蒸发而在固化时收缩。如果需要，当使用粘结剂时，在半导体器件496上的定位销498的自由端不必如图所示那样弯折。
图31示出本发明另一个半导体封装组件506，它包括一印刷线路板507，该印刷线路板有一大的金属化开口或孔508。一电容器511设置在该大的金属化通孔508中，它有被介质材料514分开的第一和第二电极板512和513。电极板512的自由延伸段512a连接于金属化通孔508镀层的部分镀层508a，另一电极板513的自由延伸段513a连接于金属化通孔508镀层的部分镀层508b。由此看到，电容器511悬挂在金属化通孔508中。多个接触底盘516设置在基片或PC板507的上下表面并与金属化通孔508分开一段距离。另外的接触底盘517设置在印刷线路板上并与金属化通孔508的部分镀层508b接触。如图所示，提供上文所述类型的半导体器件521和522，所述半导体器件521和522有上文所示类型的、焊接于接触底盘516和517的接触结构523。
图32示出本发明另一半导体组件526，它有一PC板527，在PC板的相对两侧有多个分开设置的接触底盘528，这些接触底盘528连接或粘附于上文所述具有弹性的、安装在半导体器件531和532上的诸接触结构529。上文所述类型的电容器511设置在印刷线路板527的相对两侧，它们具有连接于在印刷线路板527的相对两侧的诸接触底盘533的板512和513。从而可看出，电容器511设置在半导体器件531和532与印刷线路板527的相对两侧面之间的空间。就半导体器件531和532而言，这些电容器有着所需的空间。通过调整弹性接触结构529的高度，能为电容器511提供足够的空间，这些空间位于印刷线路板527与半导体器件531和532之间。
图33示出本发明另一半导体组件536，它包括一具有第一和第二表面538和539的多层印刷线路板或基片537。在印刷线路板537有一矩形凹部541，它穿过第一表面538。形成多个通过表面539侧可以接近或触及的多个分开设置的台阶(step)542，它们在多个相对于表面539的高度，以便有效形成诸凹陷或凹部的表面539。如图所示，印刷线路板537有至少三个不同平面、标记为546的金属化层。它还有多个在垂直于表面538和539的方向延伸并形成多种互联的垂直通路导体或垂直通路549，如图33所示。垂直通路559可由一合适的材料如在一陶瓷基体中的或在多层印刷线路板中的金属化通孔形式的钼或钨。多个接触底盘551在第二表面539一侧，它们设置在台阶542及表面539，从而直接与金属化层的几个平面接触。上文所示的类型的诸弹性接触结构552连接或粘附于各接触底盘551，这些接触结构具有多种长度，如图33所示，所以它们的自由端基本上在一个总的平行于表面539和台阶542的表面的平面。
提供一通孔去耦电容器556，它由多个电容器组成，这些电容器由设置在一本领域普通技术人员所熟知类型的在介质材料558中的多个平行导电板557所形成。诸板557连接于垂直通路559。在一侧的诸垂直通路559连接于设置在凹部541内的诸接触底盘561，与在印刷线路板537的诸垂直通路549形成接触。
如图33所示，去耦电容器556的上表面稍微超过印刷线路板537的表面538。在印刷线路板的表面538有金属化层以形成接触底盘562。另外的接触底盘563在与垂直通道559接触的去耦电容器556上。所提供的半导体器件或芯片566有多个接触底盘567。这里的诸弹性接触结构568装在接触底盘562和563上，这些接触结构568的最顶点基本上在一公共水平面上，所以，接触结构568的自由端连接于集成半导体器件566上的接触底盘567上。因而可知，弹性接触结构568能方便地适应去耦电容器556的平表面和印刷线路板537的表面538的高度差异。由此能把芯片566的平表面连接于可能是不平的表面，如图33所示。
这类结构能对去耦电容器556提供一个非常低的电感耦合，此电感耦合是一个决定微处理器特性的重要参数。如前所述，在印刷线路板537另一侧的所有接触都不同一个平面内出发，这样便于与不同平面上的接触底盘的直接连接。由此可减少在基片内互联所需的通路和导体的数量。
虽然没有示出半导体封装组件536最外侧封装，但本领域技术人员很容易理解，可采用上文所述类型的封装。或者，可用一合适聚合物或以环氧树脂基的混合物(epoxy based compound)密封由图33所示芯片566以下的部分(图未示)。
如果需要，印刷线路板537可以是大规模的，以便它能在表面538上，采用图33所示的相同原理接纳若干面朝下联接的芯片。这些反装芯片566相互相邻排成若干列，需要时在X和Y两个方向延伸。
图34示出本发明另一个半导体封装组件571，它是一个复合结构，图示例子包括一个在图33中的、上文所述类型的半导体封装组件536，它可装在另一个可称为母板或集成基片的印刷线路板576上。如图所示，母板576具有由通常称为焊料掩膜(solder mask)的设置在母板576相对侧的焊料层579所形成的第一和第二表面577和578。母板还有多层金属化层581和多个分开设置的、垂直于表面577和578延伸的金属化通孔583。金属化通孔583具有通过表面577中的开口587能接近或触及的接触表面586，还有通过层579中的穿过表面578的孔592能接近或触及的接触表面591。如图34所示，接触表面586与弹性接触结构552的自由端接触并通过合适的手段如一焊料或导电环氧树脂与其连接，从而完成组装。
应能理解，对于一大的母板，多个如图33所示类型的半导体封装组件536可装在同一个母印刷线路板或集成基片上。同样，半导体封装组件536可装在以类似于上文所述方法提供的母印刷线路板的另一侧。
有关在一母印刷线路板中安装半导体封装组件536，而不是图34所示的直接焊料接触，应该了解，如果需要，接触结构552可以是可卸接触结构，如图28所示的接触结构467，与连接于母板中的金属化通孔583的导电端形成电接触或弹性负荷接触。从而在这个方法中，在母板576与半导体封装组件536之间形成弹性接触配合。这种结构是需要的，因为它能在现场替换一半导体封装件。因而，例如采用这种弹性负荷接触，就能去掉半导体封装组件536，而用另一个较大容量的半导体封装组件来代替。例如，一笔记本式的计算器中的微处理器就可以此方法升级，在这种情况下，用于集成弹性接触的方法学(methodolgy)包括，通过弹性接触结构与一适当的测试或老化试验基片上的底盘的接合，然后如下文所述把元件弹性加负荷于板576，从而对组件536进行老化试验和测试。
图35示出本发明另一复合半导体封装组件601，该组件有：一其上装有半导体器件566的印刷线路板537；一如上文所述类型的母印刷线路板576；一图21所示类型的用在印刷线路板537与母印刷线路板576之间的插件602；以及用于把插件602的接触结构161连接于接触表面586的焊料603。类似地，插件602的接触结构121被屈服地保持与接触底盘551接合，同时通过合适的手段如穿过印刷线路板537、母线路板576和插件602的具有螺母607的螺栓606夹住接触结构121使其与接触底盘551接合，以形成一复合组件，其中，保持接触结构121受到压力以形成与印刷线路板537的接触底盘551的良好电接触。
代替螺栓606，应该知道，其他紧固装置如弹簧夹子也可用来保持接触结构121的压力，从而如上文所述把印刷线路板紧固在一起。不是象图21所示类型的插件那样的插件602而是图20所示类型的插件用于在插件两侧形成的可移动电极接触，使接触结构121可屈服地与接触底盘551接合，接触结构201可屈服地接合表面586。对于这种结构可以看出，如果需要的话，只要去掉螺栓并替换某些其他元件及插件，就可方便地对一复合半导体封装组件进行改变。插件可拆卸有利于这些改变。
图36示出本发明另一个半导体封装组件。组件611揭示了一种用来获得线路板(card)上硅封装的方法，该组件包括由一合适的绝缘材料形成的具有第一和第二表面613和614的互联基片612。这种互联基片可以是上文所述的印刷线路板那类，如它含有多个金属化的平面(图未示)以及与在表面613和614上的接触底盘617接触的通孔导体或通路导体616。
为面朝下安装的芯片621形式的半导体器件适于设置在互联基片612的相对两侧。如在有关前面的半导体器件中所描述的，这些器件有多个接触底盘622，在接触底盘622上装有一上文所述类型的弹性接触结构626，把它们面朝下转动与在互联结构612上的接触底盘617形成电接触。在反装芯片621与互联基片612之间的间隙填充一合适的密封剂631，如图所示。
所有的电连接设置在多个反装芯片内，这样，如图36所示，在组件611的一边缘可带出多个接触件636以用作先驱物(precursors)，使得半导体封装组件611能够插进诸如在一台式计算机或类似装置中的传统插座中。对于这种结构可以看出，硅芯片能被面朝下安装在互联基片612的两侧。
图37示出本发明另一个半导体封装组件651，它示出了图36所示的半导体封装组件611与半导体封装组件611垂直堆积而被称作一双层堆积板的方法。如图37所示，两个双面硅先驱物已相互垂直安装，其他的接触结构652在两先驱物611的两个互联基片612之间互联。可有选择地用聚合材料或环氧树脂材料密封整个组件以增加刚度和给予保护。
图38示出本发明另一个半导体封装组件661。它示出一组件661，在该组件中有一个上文所述类型的基片662，例如一由塑料/层板(laminate)或陶瓷或硅与基片662一起制成的在一平面中的印刷线路板。多个硅芯片或半导体器件663分开一段距离垂直堆放在基片662上，并在基本上垂直于基片662的平面的方向延伸。基片662有一其上具有与该基片662中的电路相连接的接触底盘667的平面666。类似地，硅芯片663有平行分开的表面668和669，接触件671暴露于表面668。提供上文所述类型的接触结构672，以在硅半导体器件663的接触件671与基片662的底盘667之间形成接触。因而如图所示，为了硅芯片663有一个接触结构672。接触结构是弹性类的并有弯道672a。
还有另外的弹性类接触结构676，具有第一和第二弯道676a和676b。弯道676a和676b的尺寸是这样制定的，当接触结构676固定于基片662的表面666上的另外的底盘678时，它们将接触硅芯片663的相对表面，以把芯片663弹性支承于它们相对基片662垂直的位置。
对于上文所述应能理解，为了代替每对硅芯片之间的单个接触结构676，可提供两个分开的弹性接触结构，其中一个面对一个方向，另一个面对相反的方向，从而提供了与单个弹性接触结构所提供的一样的支承。
从上文可以看到，图38所示的半导体封装组件661有利于批量生产技术，如堆栈存储芯片的生产。
总的已描述了有关的互联接触结构、插件、半导体组件、封装件以及用于制造它们的方法。采用设计成用超声波、热或能量压缩或它们的组合来连接线材的自动焊线机来形成柔性细长元件，如用作接触结构骨架和互联的106，采用这种焊线机能提供具有连续进给端(feed end)的线材，然后通过热压缩或超声波能的组合把进给端紧密连接于一接触底盘或接触端，此后从连接的自由端形成一从接触端突起的销或杆，并有一第一杆端。如果需要，第二杆端可连接于相同的接触底盘或接触端或另外的接触底盘或端头。然后在第二杆端切割销或杆以形成一骨架。此后，一导电材料沉积在骨架上以形成一上文所述的壳体并与接触底盘或端的区域紧密相邻。对于形成另外的接触结构可重复这个过程。
在形成接触结构以进行如上文所述的互联的本方法中，这些是基本步骤，也可称为形成突起的导电接触。有关许多制造半导体晶片的传统半导体工艺包含和采用了这些接触结构或突起的导电接触。如上文所述，可提供采用氧化物、渗氮或聚合物介质层进行芯片钝化。此外，可采用一合适材料如铝、铜、钛、钨、金或它们的组合物的短暂层。这样一种短暂层使使用焊线机成为可能，这种焊线机对切割工序使用高压放电。有选择地电接地的短暂层避免了对有源半导体器件可能的破坏。一般能提供这种短暂层并外镀保护膜，然后把骨架装在由保护膜的孔构成的接触底盘。随后骨架外镀一导电材料以形成壳体或肌肉，之后如上文所述那样去掉保护膜和短暂层。然后单一化或切割晶片。之后，切割后的芯片可有选择地覆盖上保护聚合物，聚合物展延至接触底盘形成接合的区域。
有关这个方法，保护膜中的孔比接触底盘中的孔大。此后，保护膜的孔镀上金属以形成一大尺寸的接触底盘或井(well)。然后除大面积接触底盘下面之外，去除保护膜和短暂层。
通过对接触底盘提供这样一个大面积，有助于根据本发明制造的接触结构的连接。这种扩大的接触底盘可以是任何所需的形状，如圆形、椭圆形、矩形以及其他形状。镀上金属的接触底盘有另外一个优点，即它们用于在大气中气密封接通常为铝的接触底盘。
至此描述了一种方法，其中为一接触结构的自由端提供一接触，外镀的肌肉层或壳体沉积之后，去掉其上的一牺牲层。应该知道如果需要的话，可在外镀层或壳体沉积之前去掉牺牲结构，然后用带有供接触用的短暂层的CVD、无电镀或电镀在其上形成外镀层或壳体。
在此之前还描述了一个用一牺牲部件如铝或铜制造一探针式接触结构的方法。这个方法也可用于在半导体芯片放进封装件之间、在一封装件上的多个接触的共同传输(gang transfer)。在封装件损坏的情况下，半导体芯片的费用将会节省下来，最后损失仅在其中的接触中。因而根据本发明，可在一传输/牺牲基片上根据此前和此后连接于封装件的组合(gang attached to the package)的任何方法形成多个接触，之后可去掉传输牺牲基片。通过采用一软件数据外存储器能方便地完成一牺牲基片载体上的多个接触(点)的连接以在传输基片上形成需要的模式而无需使用专门的模具。
通过如上文所述的半导体器件的弹性接触结构的使用，用它们形成与测试和老化基片上的接触底盘的可屈服和可脱离的接触，能方便地完成测试和老化试验以确定满足所需的性能特征，此后，可从测试和老化基片取下同样的半导体器件，而不改变如上文所述通过把多个半导体器件放到一公共基片上成为永久封装的情况，从而避免对第一平面半导体包装的需要。因而根据本发明，对有源半导体器件可在未封装时测试，也可对其在被封装入永久封装组件后测试。
从上文可以看出，已为与插件、半导体组件和使用它们的封装件形成互联提供接触结构，并提供了一个制造这些的方法。如上文所述，接触结构具有较大的通用性，它能用于半导体工业中的多种不同应用场合以便于半导体组件和封装件的批量生产。接触结构增加了可靠性并提高了结构的完整性，使得采用接触结构的半导体组件和封装件能用于相当不利的环境中。由于本发明接触结构的通用性和弹性，可在多种不同的半导体组件和封装构造中使用接触结构，其中接触在不同的高度并具有不同的间距。由于底座允许将半导体芯片安装至SIMM及其它的线路板上，接触结构能够在许多不同的构造中得到应用。本发明所揭示的接触结构和方法以直接安装的弹性接触(或点)来制造现成的印刷线路板器件(card-ready devices)。该方法适用于在晶片或单片化形式的晶片中安装接触半导体器件。用于完成该方法的设备采用了类似于传统焊线机已在工业中应用的微细机械硬件。

Claims (86)

1.一种互联接触结构组件，包括：一电子元件，该电子元件有一个表面、一个从表面可触及的导电接触端；一个具有第一端和第二端的内柔性细长元件，所述第一端不用一分开的粘结材料在所述导电接触端的表面形成一第一紧密结合点，由至少一层导电材料形成的一导电壳体，包围细长元件，并与紧邻第一紧密结合点的一部分导电接触端形成第二紧密结合点。
2.如权利要求1所述的结构，其特征在于，第二紧密结合点的拉伸、剪切和/或抗弯强度比第一紧密结合点的大。
3.如权利要求2所述的结构，其特征在于，第二紧密结合点的强度至少是第一紧密结合点的两倍。
4.如权利要求1所述的结构，其特征在于，所述至少一层受压缩。
5.如权利要求1所述的结构，其特征在于，所述内柔性细长元件和所述至少一层壳体形成一悬臂从而为互联接触结构提供一弹性特征。
6.如权利要求1所述的结构，其特征在于，所述壳体有一外层，所述的外层是一个焊料合金。
7.一种用于与含有一半导体器件的组件互联的接触结构，组件包括一电子元件，该电子元件有一个其上有至少一个导电接触底盘的表面，所述接触底盘有一个表面，所述接触结构包括：至少一个具有第一和第二端的导电柔性细长元件，把第一端连接到接触底盘表面以形成一第一紧密结合点的机构，一基本上包封柔性细长元件以及至少紧邻把柔性细长元件的第一端连接于接触底盘以提供第二紧密结合点的机构的一部分导电接触底盘的表面的壳体，从而使得第二紧密结合点的强度比第一紧密结合点的大。
8.如权利要求7所述的结构，其特征在于，所述壳体由至少一层导电材料形成。
9.如权利要求8所述的结构，其特征在于，所述柔性细长元件有至少一个形成一弯道的悬臂。
10.如权利要求9所述的结构，其特征在于，所述导电壳体有一高屈服强度。
11.如权利要求10所述的结构，其特征在于，所述壳体的所述导电材料原则上从下面的材料组中选择一种：镍、钴、铁、含磷的、硼、铜、钨、钼、铑、铬、钌、银、钯及它们的合金。
12.如权利要求8所述的结构，其特征在于，所述壳体包括提供内压应力的一层。
13.如权利要求7所述的结构，其特征在于，所述第二端是一自由端。
14.如权利要求13所述的结构，其特征在于，所述自由端有一个圆球形结构。
15.如权利要求7所述的结构，与之一起的有连接于导电材料的壳体的一外导电层，所述外导电层由一能形成良好导电连接的材料形成。
16.如权利要求7所述的结构，其特征在于，所述壳体有一个外表面，所述外表面有微突起。
17.如权利要求9所述的结构，与之一起的有从所述接触底盘的表面伸出并遍布弯道以当允许弯道弯曲时使弯道的感应特性最小的导电软材料块。
18.如权利要求13所述的结构，其特征在于，所述自由端伸出电子元件的表面。
19.如权利要求13所述的结构，其特征在于，所述自由端在电子元件的下面向下延伸。
20.如权利要求7所述的结构，与之一起的有设置在壳体的一层介质材料和另外一层设置在所述介质材料上的导电材料形成一屏蔽的接触结构。
21.如权利要求10所述的结构，其特征在于，所述第二端是自由端，以便使第二端能用作一弹性探针式接触从而弹性地接触接触端。
22.如权利要求21所述的接触结构，其特征在于，所述接触结构包括一用作电接触的悬垂部分。
23.如权利要求13所述的接触结构，其特征在于，所述自由端有一个接触底盘，所述接触底盘至少有一层，其上具有多个分开设置的突起。
24.如权利要求23所述的结构，其特征在于，所述具有突起的层由一硬的导电材料形成。
25.如权利要求24所述的结构，其特征在于，所述硬导电材料从下面材料组中选择：镍、钴、铑、铁、铬、钨、钼、碳和它们的合金。
26.如权利要求10所述的结构，其特征在于，所述探针端有一个靠近自由端的悬臂部分。
27.如权利要求7所述的结构，连同一起的有把第二端连接到结合有第一端的同一个导电接触底盘的机构，同时，焊料将所述接触结构包封住并形成一焊料凸缘。
28.如权利要求27所述的结构，其特征在于，所述壳体有一原则上由一焊料材料形成的外层。
29.如权利要求7所述的结构，其特征在于，所述柔性细长元件形成延展于接触底盘并包围在柔性细长元件之间的平面区域的诸环路，在柔性细长元件上形成壳体，焊料机构固定于柔性细长元件的壳体并形成一覆盖被包围的平面区域的焊料突起。
30.一种用于一半导体器件的插件，一由一绝缘材料形成的基片，基片有分开设置的第一和第二表面以及多个在所述表面中的至少一个上的分开设置的接触底盘，多个接触结构装在在所述至少一个表面上的诸接触底盘，所述每个接触结构包括至少一个具有第一和第二端的柔性细长元件、把第一端连接于一接触底盘的机构、一在柔性细长元件上形成的连接于接触底盘的导电材料壳体，第二端是自由端并伸出基片。
31.如权利要求30所述的插件，其特征在于，所述基片有穿过其中的孔，与之一起的有固定于诸接触底盘并穿过诸孔的其他柔性细长元件，以及在这些柔性细长元件上的由一导电材料形成的壳体。
32.如权利要求31所述的插件，其特征在于，所述柔性细长元件有一个悬臂部分的弯道，所述壳体由一至少为30,000磅/平方英寸的高屈服强度的材料所形成。
33.如权利要求31所述的插件，其特征在于，所述孔有穿过第一和第二表面的相互之间偏移的诸部分，提供了相对于第一和第二表面凹进的台阶，在诸所述台阶设置有诸接触底盘，其中诸所述接触结构固定于设置在台阶的接触底盘，而且有通过孔朝外伸出第一和第二表面的诸自由端，自由端在分开的平行平面中。
34.如权利要求31所述的插件，其特征在于，所述孔具有穿过其的导体。
35.如权利要求31所述的插件，其特征在于，所述孔是金属化通孔，所述接触结构设置在第一和第二表面之一的接触底盘上，同时另外的接触结构越过金属化通孔而连接于基片的另一侧接触底盘上，所述另外接触结构包括柔性细长元件及在其上的壳体。
36.如权利要求35所述的插件，其特征在于，所述另外的接触结构基本上是有高度的环路形，与在另外的接触结构上形成的焊料一起提供一焊料凸缘。
37.一种半导体组件，包括一有源半导体器件，其表面有诸接触底盘，多个接触结构装于这些接触底盘上，所述每个接触结构包括一具有第一端和第二端的柔性细长元件，以及把第一端连接于接触底盘的机构，第二端是自由端，在柔性细长元件上形成的由导电材料组成的一壳体遍布柔性细长元件和固定第一端的接触底盘的至少一部分，所述柔性细长元件有一形成弯道的悬臂部分，所述接触底盘以一预定的距离分开设置，所述接触结构的第二自由端以一比柔性细长元件的连接于接触结构的诸第一端之间的间距大的距离分开设置。
38.如权利要求37所述的组件，其特征在于，第二自由端相对于柔性细长元件的第一端错位。
39.如权利要求37所述的半导体组件，同时具有固定和安装在半导体器件的表面的定位销，所述定位销由一柔性细长元件和一在柔性细长元件上形成的壳体所组成。
40.如权利要求37所述的组件，其特征在于，定位销的所述柔性细长元件和所述壳体由与接触结构相同的材料形成。
41.一种半导体封装组件，包括：一由绝缘材料形成的基片，所述基片有第一和第二表面，在第一和第二表面的至少一个上设置有接触底盘；至少一个有一第一表面和接触底盘的有源半导体器件；有第一和第二端的互联弹性接触结构，第一端适于连接于在基片的一表面中的底盘或连接于半导体器件的接触底盘，以在它们之间形成连接，第二端适于与半导体器件的接触底盘或装在基片一表面的接触底盘形成接触而不连接，所述每个互联接触结构由一具有形成一弯道的悬臂部分的柔性细长元件和一具有至少30,000磅/平方英寸的高屈服强度的导电材料所形成的设置在柔性细长元件上的壳体所组成，并用来为互联接触结构提供弹性特征以把有源硅器件弹性地固定于基片。
42.如权利要求41所述的组件，同时具有至少一个另外的具有接触底盘的有源半导体器件，以及使至少一个另外的有源半导体器件的接触底盘与在基片另一表面的接触底盘连接的机构。
43.如权利要求42所述的组件，其特征在于，所述使至少一个另外的半导体器件的接触底盘与基片另一表面的接触底盘连接的所述机构包括与最初称为互联接触结构的构造一样的互联接触结构。
44.如权利要求41所述的组件，其特征在于，由一导电材料形成的壳体紧密连接于诸接触底盘，以提供另外的把接触结构固定于接触底盘的拉伸强度。
45.如权利要求41所述的组件，其特征在于，所述基片是一印刷线路板，所述印刷线路板有多层金属化层和穿过其的垂直通路导体，接触底盘与垂直通路导体接触。
46.如权利要求41所述的组件，同时具有弹簧夹子，弹簧夹子装置固定于基片并伸到半导体器件上以把至少一个有源半导体器件保持在一相对于基片的预定位置，同时使压力作用于互联弹性接触结构。
47.如权利要求46所述的组件，其特征在于，所述弹簧夹子装置由与互联弹性接触结构相同的材料形成。
48.如权利要求45所述的组件，其特征在于，互联接触结构有第二自由端，第二自由端穿过在印刷线路板的垂直通路导体与垂直通路导体摩擦接触从而与其形成电接触，同时用来把半导体器件保持在一相对于基片的预定位置。
49.如权利要求41所述的组件，其特征在于，所述基片有多个孔，弹簧夹子装置固定于半导体器件并穿过孔而接触印刷线路板以把半导体器件保持在一相对于基片的预定位置，同时压力作用于把基片上的接触底盘连接于半导体器件上的接触底盘的弹性接触结构。
50.如权利要求41所述的组件，其特征在于，所述基片有多个定位孔，定位销装在所述半导体器件上并穿过在所述基片中的孔使半导体器件相对基片对齐，粘结装置设置在半导体器件与基片之间以把半导体器件保持在由定位销对齐确定的相对于基片的预定位置。
51.如权利要求50所述的组件，其特征在于，所述定位销由细长元件所形成，细长元件上形成有壳体以为其提供附加的结构支承。
52.如权利要求41所述的组件，同时具有一设置在所述第一半导体器件与所述基片之间的电容器，所述电容器有接触端和把所述接触端耦合到第一半导体器件的接触底盘的装置。
53.如权利要求52所述的组件，其特征在于，所述基片有一凹口，电容器设置在其内。
54.如权利要求52所述的组件，其特征在于，所述把接触端耦合到第一有源半导体器件的接触底盘的装置包括相邻于凹口设置的接触底盘。
55.如权利要求41所述的组件，其特征在于，所述基片设置有一具有在不同水平面上有台阶的第二表面，台阶上设置有接触底盘，其中接触结构固定于台阶上的底盘并具有延伸进同一水平面的自由端。
56.如权利要求41所述的组件，其特征在于，所述基片有一个穿过第一表面的凹口，一电容器设置在凹口内，另外的接触结构装于电容器并终端于与半导体结构的接触底盘相同的平面并固定于半导体器件，与半导体结构形成电接触。
57.如权利要求41所述的组件，同时，具有一个集成基片，在集成基片上有多个接触底盘，同时另外的弹性接触结构把基片的接触底盘互联到集成基片的接触底盘。
58.如权利要求57所述的组件，同时具有多个装在集成基片上的另外的基片，以及把另外的基片连接到集成基片的接触结构。
59.如权利要求58所述的组件，其特征在于，把所述基片互联到所述集成基片的所述接触结构包括一插件，它有第一和第二侧面及在其上的接触底盘，至少在第一和第二侧面的某些接触底盘之间电互联，所述接触结构与插件上的接触底盘及基片上的接触底盘形成接触，焊料装置形成插件的接触底盘与集成基片的接触底盘之间的连接。
60.如权利要求59所述的组件，其特征在于，所述弹性接触结构屈服地接触插件、基片或集成基片的接触底盘，制约装置把基片互联到集成基片以使压力作用于接触结构，使得接触结构保持与诸接触底盘的电接触。
61.如权利要求60所述的组件，其特征在于，所述制约装置为可移动紧固装置。
62.一种半导体封装组件，包括：一由绝缘材料形成的基片，基片有第一和第二表面，在第一和第二表面上有导电接触底盘；多个半导体器件，具有面对在基片的第一和第二表面上的接触底盘的接触底盘；以及用于半导体器件的接触底盘与在基片上的接触底盘的电互联和用于支承位于离开基片表面一段距离的半导体器件的弹性接触结构，以便半导体器件位于在基片相对侧的第一和第二平行表面，在基片的接触装置用于通过接触结构形成与半导体器件的电接触。
63.如权利要求62所述的组件，其特征在于，所述接触装置设置在一个平面并成一排排列。
64.形成一种接触结构以便用具有第一和第二端的软细长导电构件与在一电子元件上的一接触底盘接触的方法，把第一端固定于接触底盘以形成一第一结合点，在柔性细长元件上形成一导电材料以形成壳体，壳体遍布提供结构接触的柔性细长元件、第一结合点和粘结于其上的接触底盘，以在接触底盘与结构接触之间提供附加的强度。
65.如权利要求64所述的方法，同时具有步骤：在柔性细长元件的第一端和第二端之间形成一弯道，在弯道上形成壳体以为接触结构提供可屈服的弹簧性能。
66.如权利要求65所述的方法，同时具有步骤：提供一其上具有一接触底盘的另外的电子元件，使柔性细长元件的第二端与在另外的电子元件上的接触底盘接触以在它们之间建立电连接。
67.如权利要求64所述的方法，同时具有步骤：在电子元件与另外的电子元件之间施加压力，使得压力保留在接触结构上。
68.如权利要求64所述的方法，同时具有步骤：把第二端固定到同一个接触底盘形成一第二结合点。
69.一种在电子元件上导电端安装一突起的导电接触的方法，该方法包括顺序的步骤：提供一线材，该线材有紧密连接于端部的连续进给端，从连接的进给端形成一从端部突起的杆，其上有第一杆端，把第二杆端连接到与电子元件分开装设的牺牲部分，在第二杆端切割杆以形成一骨架，沉积导电材料以包封骨架以及至少包封元件的相邻表面并去掉牺牲部分。
70.如权利要求69所述的方法，其特征在于，在去掉牺牲部分的步骤中，从牺牲部分切割第二杆端。
71.如权利要求69所述的方法，其特征在于，导电材料的表面具有大量的微突起。
72.如权利要求69所述的方法，其特征在于，沉积步骤包括相互不同的多层布局(placement)。
73.如权利要求72所述的方法，其特征在于，至少由导电材料组成的一层有锯齿状外形，以便当与一匹配的端部配合时减少隆起的导电接触的接触电阻。
74.一种把隆起的导电接触安装到一电子元件上导电端的方法，该方法包括顺序步骤：把一具有连续进给端的线材提供到端部，把进给端紧密连接于端部，自进给端形成一从端部突起的杆，杆上有第一杆端，在第二杆端切割杆以形成一骨架，沉积导电材料以包封骨架和端部的相邻表面，在至少一个电子元件的多个端部完成相同步骤，其中端部在不同的平面，成形步骤导致多个独立的隆起的杆，所有在各个杆进行的切割步骤，都在一个共同的平面。
75.如权利要求74所述的方法，其特征在于，端部在不同的平面，成形步骤在不同的平面进行。
76.一种方法，通过使用一分开的其上有以预定模式排列的接触底盘的测试或老化试验基片，在一个其上装有多个弹性接触结构的半导体器件上进行测试和/或老化试验过程，该方法包括：使具有多个弹性接触结构的半导体器件在压力下相对于测试或老化试验的基片定位，以屈服地推动与半导体器件一起的弹性接触结构而与测试或老化试验基片的接触底盘配合而电接触，当弹性接触结构与测试或老化试验基片的接触底盘接触时进行在半导体器件上的测试，然后在测试或老化试验完成之后，使具有多个弹性接触结构的半导体器件脱离与测试或老化试验基片的接触底盘的接触。
77.如权利要求76所述的方法，用于一其上有多个以一预定模式排列的接触底盘的集成基片，在测试或老化试验过程完成之后，进行另外的步骤：使半导体器件的弹性接触结构与在集成基片上的接触底盘接触，在接触结构与集成基片的接触底盘之间形成一永久的连接。
78.如权利要求76所述的方法，其特征在于，所述接触结构有底端和自由端，且具有改变自由端之间的间距的步骤，使得自由端间距不同于底端间距并与基片上的接触底盘的间距相对应。
79.一种把一隆起的导电接触安装到一电子元件的导电端的方法，该方法包括步骤：提供一具有一连续进给端的线材，使进给端紧密连接于端部，从进给端形成一从端部突起的杆，杆上具有一第一杆端，在第二杆端切割杆以形成一骨架，沉积导电材料以包封骨架和端部的相邻表面。
80.如权利要求79所述的方法，其特征在于，通过一线材连接设备进行成形步骤和切割步骤，在切割步骤之后但在沉积步骤之前通过一外部工具使骨架成形。
81.如权利要求79所述的方法，其特征在于，导电材料的表面有大批微突起。
82.如权利要求79所述的方法，具有沉积步骤，包括多个相互不同的层的布局。
83.如权利要求79所述的方法，其特征在于，沉积步骤包括多个相互不同的层的布局。
84.如权利要求79所述的方法，在多个端部进行，其特征在于，成形步骤形成多个独立的隆起杆，切割步骤在各个杆中进行，所有杆在一个共同的平面。
85.如权利要求79所述的方法，在至少一个电子元件的多个端部进行，其特征在于，端部在不同的平面，成形步骤形成多个独立的隆起杆，切割步骤在各个杆中进行，所有杆在一个共同的平面。
86.如权利要求79所述的方法，在一个电子元件的至少一个端部进行，其特征在于，线材主要由从下面的材料组中选择的一种主要材料制成：金、铜、铝、银、铟、以及它们的合金，骨架镀有导电材料的第一层，导电材料从下面的材料组中选择：镍、钴、硼、含磷的、铜、钨、钛、铬以及它们的合金，导电材料的顶层是一从下面的材料组选择的焊料：铟、铋、锑、金、银、镉以及它们的合金。
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US6279227B1 (en) 2001-08-28
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US5917707A (en) 1999-06-29
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