JP2852134B2 - バンプ形成方法 - Google Patents

バンプ形成方法

Info

Publication number
JP2852134B2
JP2852134B2 JP3047490A JP4749091A JP2852134B2 JP 2852134 B2 JP2852134 B2 JP 2852134B2 JP 3047490 A JP3047490 A JP 3047490A JP 4749091 A JP4749091 A JP 4749091A JP 2852134 B2 JP2852134 B2 JP 2852134B2
Authority
JP
Japan
Prior art keywords
wire
bump
aluminum pad
ball
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP3047490A
Other languages
English (en)
Other versions
JPH04266040A (ja
Inventor
勉 青木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP3047490A priority Critical patent/JP2852134B2/ja
Priority to US07/835,378 priority patent/US5263246A/en
Publication of JPH04266040A publication Critical patent/JPH04266040A/ja
Application granted granted Critical
Publication of JP2852134B2 publication Critical patent/JP2852134B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67138—Apparatus for wiring semiconductor or solid state device
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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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  • Engineering & Computer Science (AREA)
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  • Power Engineering (AREA)
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】
【０００１】
【産業上の利用分野】本発明はＴＡＢ用ウェハのバンプ
形成方法に関し、特に狭ピッチインナーリード対応のバ
ンプ形成方法に関する。
【０００２】
【従来の技術】従来、この種のバンプ形成方法は、ウェ
ハ上の電極に金メッキを行う金バンプ、銅メッキを行う
銅バンプが実施されていたが、資材費が高いという欠点
があり、低コスト化に対応する技術として、標準の金線
ボンダーを利用したボールバンプ方法が提案されて来て
いる。図６にボールバンプした状態を示す平面図、図７
にその側面図を示す。ボールバンプは、ボンダーのスパ
ークロッドで金線ワイヤー先端にボールを形成した後、
ウェハ３のアルミパッド２上に金ボール１１を圧着し、
ワイヤーを引きちぎる方式である。拡散工程でのバンプ
工程が不要となるため、ＴＡＴが短かくなり、多種のウ
ェハサイズに対応できるという汎用性も有り、資材費が
他のバンプ形成方法に比べて低いということで近年注目
されている方法である。
【０００３】
【発明が解決しようとする課題】この従来のボールバン
プ方法では、金線ワイヤーにボールを形成するため、ボ
ールを形成した時点でのボール径は、ワイヤー径の約
２．５倍の大きさになる。さらに、そのボールをアルミ
パッド上に圧着すると、図６に示すように、ワイヤー径
の約３．５倍のつぶし径となる。従って、チップの微細
化にともない、アルミ電極間を狭ピッチ化したいが、上
記の理由により、約１２０μ程度が限界となっている。
これに対し、ワイヤー径を細線化するという手段もある
が、細線にボールを形成する方法は、スパーク電圧の制
御も難しく、安定要素が欠ける。さらに、細線化で加工
コストが見合うのは、２０μが限界であり、その場合の
つぶし径は約７０μとなり、ボールバンプでの狭ピッチ
化の限界は、約１００μということになる。
【０００４】本発明の目的は、前記課題を解決したバン
プ形成方法を提供することにある。
【０００５】
【課題を解決するための手段】前記目的を達成するた
め、本発明に係るバンプ形成方法は、ＴＡＢ用ウェハに
バンプを形成する方法において、アルミパッドを細長く
構成し、アルミパッド内でワイヤ−の一端をアルミパッ
ドにウェッジボンディングし、下方向にワイヤ−高さを
コントロ−ルしてワイヤ−の他端をアルミパッドにウェ
ッジボンディングし、ワイヤ−の部分をバンプとして用
いるものである。
【０００６】
【０００７】
【作用】金属ワイヤーをアルミパッド上でウェッジボン
ディングを行い、必要量圧縮した後に、クランプによっ
て金属ワイヤーを引きちぎる方式を備えており、アルミ
パッド上でのつぶし幅をワイヤー径の１．５倍以下にす
ることを可能とする。
【０００８】
【実施例】次に本発明について図面を参照して説明す
る。
【０００９】（実施例１）図１は、本発明によりバンプ
形成されたウェハを示す断面図、図２は、バンプ形成後
の１個のアルミパッドを示す平面図、図３（ａ）〜
（ｄ）は、本発明のバンプ形成方法を工程順に示す図、
図４は、本発明の装置を示す平面図である。
【００１０】図３に示すように、ウェハ３のパッド上に
ウェッジ５を用いてワイヤー７の先端部をウェッジボン
ディングし、アルミパッド２上にウェッジボンディング
した後クランプ６によってワイヤー７をつまみながら上
昇させると、アルミパッド２上に図２に示すようなワイ
ヤーのつぶし部分が残る。４はダイシングラインであ
る。ウェッジボンディングのため、つぶし部長さＡは、
ワイヤー径Ｄの約２倍、つぶし部幅Ｂは、ワイヤー径の
約１．５倍以下に制限できる。従って、ワイヤー径φ２
０μを使用すれば、アルミパッド２を□４０μ程度に設
定でき、アルミパッド２間の狭ピッチ化を可能にし、イ
ンナーリードピッチを１００μ以下に設定できる。
【００１１】図４は、ウェハ３上にウェッジボンディン
グによりバンプ形成を実施している状態であるが、ウェ
ッジボンディングを実施するためにＵＳホーン８と、ボ
ンディング方向を合わせるためのＸＹθステージ９と、
位置決めローラ１０を有する。
【００１２】（実施例２）図５は、本発明の実施例２を
示す図である。本実施例においては、アルミパッド２間
を狭ピッチ化して、アルミパッド２を細長く構成してい
る。アルミパッド２内でウェッジボンディングを実施し
ているが、つぶし部分ではなく、ワイヤー７の部分をバ
ンプとして利用する方法である。一般のボールホルダー
を使って、アルミパッド内でボンディングを行うと、ワ
イヤーの立ち上がり部分ができてしまうため、均一なバ
ンプ高さの設定が不可能となる。ウェッジボンディング
の場合は、下方向にワイヤー高さをコントロールするの
は容易であることから、本例が可能となる。アルミパッ
ド長さＥも、ワイヤー径φ２０μなら１６０μ程度に制
限できる。
【００１３】
【発明の効果】以上説明したように本発明は、金属ワイ
ヤーをアルミパッド上でウェッジボンディングを行い、
必要量だけを残すことができるため、従来のバンプ形成
方法よりもアルミパッドの極小化、及びパッド間の狭ピ
ット化を可能にできる。それにより、半導体チップを高
機能化、縮小化できるという効果を有する。
【図面の簡単な説明】
【図１】本発明に係るバンプ形成後のウェハを示す断面
図である。
【図２】バンプ形成後のアルミパッドを示す平面図であ
る。
【図３】バンプ形成方法の工程順を示す図である。
【図４】本発明の装置を示す平面図である。
【図５】本発明の実施例２によるバンプ形成後のアルミ
パッドを示す平面図である。
【図６】従来のボールバンプ形成方法のアルミパッドを
示す平面図である。
【図７】従来例によるアルミパッドの側面図である。
【符号の説明】
１ バンプ ２ アルミパッド ３ ウェハ ４ ダイシングライン ５ ウェッジ ６ クランプ ７ ワイヤー ８ ＵＳホーン ９ ＸＹθステージ １０ 位置決めローラ １１ 金ボール

Claims (1)

    (57)【特許請求の範囲】
  1. 【請求項１】 ＴＡＢ用ウェハにバンプを形成する方法
    において、アルミパッドを細長く構成し、アルミパッド
    内でワイヤ−の一端をアルミパッドにウェッジボンディ
    ングし、下方向にワイヤ−高さをコントロ−ルしてワイ
    ヤ−の他端をアルミパッドにウェッジボンディングし、
    ワイヤ−の部分をバンプとして用いることを特徴とする
    バンプ形成方法。
JP3047490A 1991-02-20 1991-02-20 バンプ形成方法 Expired - Fee Related JP2852134B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP3047490A JP2852134B2 (ja) 1991-02-20 1991-02-20 バンプ形成方法
US07/835,378 US5263246A (en) 1991-02-20 1992-02-14 Bump forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3047490A JP2852134B2 (ja) 1991-02-20 1991-02-20 バンプ形成方法

Publications (2)

Publication Number Publication Date
JPH04266040A JPH04266040A (ja) 1992-09-22
JP2852134B2 true JP2852134B2 (ja) 1999-01-27

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Country Status (2)

Country Link
US (1) US5263246A (ja)
JP (1) JP2852134B2 (ja)

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Also Published As

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US5263246A (en) 1993-11-23

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