DE102005028951B4 - Anordnung zur elektrischen Verbindung einer Halbleiter-Schaltungsanordnung mit einer äusseren Kontakteinrichtung - Google Patents
Anordnung zur elektrischen Verbindung einer Halbleiter-Schaltungsanordnung mit einer äusseren Kontakteinrichtung Download PDFInfo
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- DE102005028951B4 DE102005028951B4 DE102005028951.7A DE102005028951A DE102005028951B4 DE 102005028951 B4 DE102005028951 B4 DE 102005028951B4 DE 102005028951 A DE102005028951 A DE 102005028951A DE 102005028951 B4 DE102005028951 B4 DE 102005028951B4
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- 239000004065 semiconductors Substances 0.000 title claims abstract description 77
- 239000010410 layers Substances 0.000 claims abstract description 95
- 239000010931 gold Substances 0.000 claims abstract description 29
- 239000010933 palladium Substances 0.000 claims abstract description 14
- 229910000990 Ni alloys Inorganic materials 0.000 claims abstract description 8
- 239000011701 zinc Substances 0.000 claims abstract description 6
- 229910052737 gold Inorganic materials 0.000 claims description 16
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- 210000004940 Nucleus Anatomy 0.000 abstract description 4
- 238000000034 methods Methods 0.000 description 28
- 239000010949 copper Substances 0.000 description 24
- 238000004519 manufacturing process Methods 0.000 description 14
- 239000000463 materials Substances 0.000 description 13
- 229910005569 NiB Inorganic materials 0.000 description 12
- 238000001465 metallisation Methods 0.000 description 12
- 239000010950 nickel Substances 0.000 description 11
- 239000011248 coating agents Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
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- 150000001875 compounds Chemical class 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reactions Methods 0.000 description 5
- 238000009736 wetting Methods 0.000 description 5
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- 239000002184 metals Substances 0.000 description 4
- 239000000203 mixtures Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 229910001413 alkali metal ions Inorganic materials 0.000 description 3
- 244000052616 bacterial pathogens Species 0.000 description 3
- 239000000969 carriers Substances 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 229910000679 solders Inorganic materials 0.000 description 3
- 229910003294 NiMo Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N boron Chemical compound 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- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical class data:image/svg+xml;base64,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 data:image/svg+xml;base64,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 [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminum Chemical compound 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Classifications
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R12/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCBs], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
- H01R12/50—Fixed connections
- H01R12/51—Fixed connections for rigid printed circuits or like structures
- H01R12/55—Fixed connections for rigid printed circuits or like structures characterised by the terminals
- H01R12/57—Fixed connections for rigid printed circuits or like structures characterised by the terminals surface mounting terminals
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
- H01R13/02—Contact members
- H01R13/03—Contact members characterised by the material, e.g. plating, or coating materials
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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Abstract
Verbindungsanordnung zwischen einer Halbleiter-Schaltungsanordnung (1) und einer äusseren Kontakteinrichtung (3), bei der die Unterseite (12) der Halbleiter-Schaltungsanordnung (1) und die Oberseite (31) der äusseren Kontakteinrichtung (3) gegenüber zueinander vorgesehen sind und eine elektrische Verbindung zwischen einem inneren Kontaktanschluss (4) auf der zur Unterseite gegenüberliegenden Oberseite (11) der Halbleiter-Schaltungsanordnung (1) und einem äusseren Kontaktanschluss (5) auf der Oberfläche der äusseren Kontakteinrichtung (3) aus einem elektrisch leitenden Draht (6) besteht, wobei auf der Oberfläche mindestens des inneren Kontaktanschlusses (4) und auf der Oberfläche des Drahtes (6) eine zusätzliche metallische Schicht (7, 72) angeordnet ist, dadurch gekennzeichnet, dass die metallische Schicht (7) aus Zn-Keimen (71), einer Ni-Legierungsschicht (72), einer Pd-Schicht (73) und einer Au-Schicht (74) besteht.
Description
- Die Erfindung betrifft eine elektrische Verbindungsanordnung zwischen einer Halbleiter-Schaltungsanordnung und einer äusseren Kontakteinrichtung.
- Bei der Herstellung von Modulen, die integrierte Schaltungen enthalten, oder oberflächenmontierbaren Bauelementen (SMD) werden üblicherweise die Schaltungen und Bauelemente zuerst auf bzw. in Halbleiter-Wafern mit mikroelektronischen Technologien erzeugt und so Schaltungsanordnungen gebildet, wobei auf der Oberfläche der Halbleiter-Schaltungsanordnungen Kontaktanschlüsse zur elektrischen Verbindung mit einer äusseren Kontakteinrichtung aufgebracht werden. Die Halbleiter-Schaltungsanordnungen bzw. Halbleiter-Chips werden dann vereinzelt, mit äusseren Kontakteinrichtungen verbunden und mit einem Gehäuse umschlossen. Innerhalb dieses Prozesses werden die Halbleiter-Schaltungsanordnungen elektrisch charakterisiert, auf einem Träger montiert und die elektrische Verbindung zu äusseren Anschlüssen hergestellt.
- Kontaktanschlüsse auf der Oberfläche von Halbleiter-Schaltungsanordnungen unterliegen während des Prozessierens, der elektrischen Charakterisierung der enthaltenen Bauelemente und Schaltungen und der anschliessenden Herstellung der elektrischen Verbindung zu einer äusseren Kontakteinrichtung verschiedenen Umwelteinflüssen. So können beispielsweise durch Nadelkarten-Abdrücke während des Messvorganges oder durch das Bonden Risse in der Metallisierung des Kontaktanschlusses entstehen, die eine Diffusion von Alkalimetall-Ionen, z.B. Na-Ionen, in die Halbleiter-Schaltungsanordnung, speziell in die aktiven Gebiete, begünstigen und damit beispielsweise zu einer Verschiebung der Einsatzspannung von Transistoren führen.
- Die elektrischen Verbindungen zwischen einer Halbleiter-Schaltungsanordnung und einer äusseren Kontakteinrichtung können auf verschiedene Weise ausgeführt werden. Eine sehr verbreitete Methode ist das Drahtbonden mit einem Au- oder Al-Draht. Dabei wird ein erstes Ende des Drahtes auf dem inneren Kontaktanschluss auf der Oberfläche der Halbleiter-Schaltungsanordnung befestigt, der Draht anschliessend von dort zu einem äusseren Kontaktanschluss auf der Oberfläche der äusseren Kontakteinrichtung geführt und das zweite Ende des Drahtes auf diesem befestigt.
- Beim Drahtbonden sind verschiedene Verfahren, die sich bezüglich der eingesetzten Materialien und der verwandten Prozessparameter, wie z.B. Druck und Temperatur, unterscheiden, gebräuchlich. Beim Thermokompressionsbonden wird ein Au-Draht verwandt, dessen Ende aufgeschmolzen und auf dem Kontaktanschluss aufgedrückt wird. Beim Ultraschallbonden wird beispielsweise ein Al-Draht mit einer Kaltschweisspressverbindung, das heisst bei Raumtemperatur unter der Anwendung von Ultraschall, auf dem Kontaktanschluss befestigt. Auch eine Kombination beider Verfahren ist möglich.
- Das Herstellen der elektrischen Verbindung mittels Bonden bringt einige gravierende Probleme mit sich. Beim Bonden auf der Oberfläche der Halbleiter-Schaltungsanordnung kann es, vor allem bei Prozessparametern, die zu einer starken Verformung des Bonds führen (Überbonden), zu Rissen in der Kontaktmetallisierung kommen, die eine Diffusion von Alkalimetall-Ionen, z.B. von Na-Ionen, in die aktiven Bereiche der Halbleiter-Schaltungsanordnung begünstigen und so zu einer Veränderung der elektrischen Eigenschaften der Halbleiter-Schaltungsanordnung führen. Die Bondausbeute und die Zuverlässigkeit der Bondverbindungen, z.B. die Power-Cycling-Festigkeit, sind von den gewählten Prozessparametern abhängig. So kann ein niedriger Druck bei der Herstellung der Bondverbindung die Ausbeute erhöhen, er verringert aber gleichzeitig die Zuverlässigkeit, während ein erhöhter Druck bei der Herstellung der Bondverbindung und damit eine vergrößerte Auflagefläche des Drahtes auf dem Kontaktanschluss zwar die Zuverlässigkeit erhöht, aber beispielsweise zu den oben erwähnten Problemen mit Rissen in der Metallisierung führt.
- Dieses Problem ist besonders bei der Verwendung von dicken Drähten relevant, wie sie beim Bonden von Leistungshalbleitermodulen aufgrund der notwendigen hohen Stromtragfähigkeit eingesetzt werden.
- Weiterhin kann es zum Angriff von korrosiven Moldcompound-Materialien auf den Bondkontakt kommen, der die Festigkeit und Zuverlässigkeit des Kontaktes verringert. Diese Materialien sind Bestandteil des Gehäuses, das die Halbleiter-Schaltungsanordnung und die äussere Kontakteinrichtung umschliesst. Weiterhin werden Abätzungen des Bondkontaktes vom Kontaktanschluss bei nachfolgenden Prozessschritten aufgrund unterschiedlicher chemischer Potentiale beobachtet.
- Um diese Probleme zu lösen, sind bisher aufwendige Optimierungsprozesse für die elektrische Charakterisierung mittels Nadelkarten und für die Bondparameter durchgeführt worden, die zwar eine Verbesserung hervorgerufen haben, aber keine endgültige Lösung des Problems darstellen. Weiterhin wurde die Metallisierung auf der Oberfläche der Halbleiter-Schaltungsanordnung als sehr dicke Schicht ausgeführt oder durch die gezielte Beimengung von zusätzlichen Materialien mechanisch gehärtet, um beim Bonden Prozessparameter einsetzen zu können, die eine hohe Ausbeute und Zuverlässigkeit ermöglichen. Zur mechanischen Stabilisierung des Bondkontaktes auf der Oberfläche der Halbleiter-Schaltungsanordnung, welche besonders bei Bondprozessen ohne starke Verformung des Bond-drahtes notwendig ist, sowie zum Schutz vor aggressiven Mouldcompound-Materialien wird auf den Bondkontakt ein harter, hochtemperaturfester Kunststoff aufgebracht. Alle diese Lösungsansätze führen allerdings zu einer wesentlichen Erhöhung der Kosten. Für das Problem des Abätzens des Bondkontaktes aufgrund unterschiedlicher chemischer Potentiale gibt es zur Zeit keine Lösung.
- Aus der
US 6 825 564 B2 ist ein Verfahren bekannt, bei dem eine NiP-Schicht stromlos auf einem Kontaktanschluss aus Cu abgeschieden wurde, um die Oxidierung der Cu-Oberfläche zu verhindern und damit die Bondfähigkeit des Kontaktanschlusses zu verbessern. - In der
GB 2 362 510 A - In der
US 6 564 449 B1 ist ein Verfahren zur Verstärkung des Kontaktanschlusses auf der Oberfläche der Halbleiter-Schaltungsanordnung beschrieben, bei dem ein zusätzliches Schichtsystem aus Ti, Cr oder TiW und Au oder aus Ni und Au auf dem Kontaktanschluss abgeschieden wird, um die Zuverlässigkeit und Reproduzierbarkeit des Bondkontaktes beim reverse wire bonding mit Au-Draht zu erhöhen. - In der
DE 26 50 348 A1 ist eine Verbindungsanordnung beschrieben, bei der auf die stiftförmigen elektrischen Anschlussleiter eines diskreten elektrischen Bauelementes und auf die damit zu verbindende Leiterbahn auf einer Leiterplatte ein Schichtsystem aus einer Ni- und einer Au-Schicht aufgebracht wurde, um die Lötbarkeit der Kontaktanschlüsse zu verbessern. - In der
JP S54- 149 578 A - In der
JP S64- 48 434 A - In der JP H06- 302 639 A ist eine elektrische Verbindung mittels eines Al-Bond-Drahtes mit einem Durchmesser von 550 µm zwischen einem Halbleiter-Chip und einer äußeren Kontakteinrichtung beschrieben.
- In der JP H11- 37 022 A ist ein Halbleiter-Bauelement mit einem verstärkten Bond-Kontaktanschluss zum Vermeiden von Schäden am Bondkontakt beschrieben. Dabei ist die Dicke des Kontaktanschlussgebietes durch die Erhöhung der Dicke der Kontaktanschluss-Schicht aus Al selbst oder durch das Aufbringen einer zusätzlichen Schicht unter dem Kontaktanschluss vergrößert.
- In der
DE 699 12 565 T2 ist ein Halbleiter-Bauelement mit einem verstärkten Bond-Kontaktanschluss über aktiven Gebieten des Halbleiter-Bauelementes beschrieben. Der verstärkte Kontaktanschluss soll Schädigungen der darunter liegenden Gebiete des Halbleiter-Bauelementes beim Bonden vermeiden. Dazu wird auf dem Bondpad 5 ein zusätzlicher Bump aus Ni, Cu, einer Ni- oder einer Cu-Legierung aufgebracht. Auf diese kann eine weitere Schicht aus Au, Pt oder Ag aufgebracht werden. - Ein Einsatz von Cu als Material für den Draht ist aufgrund der guten elektrischen Eigenschaften von Cu in Zukunft vorgesehen. Dies ist schwierig, da grosse Kräfte bei der Herstellung des Kontaktes des Cu-Drahtes zum Kontaktanschluss notwendig sind, was bei der jetztigen Ausführung der Kontaktanschlüsse auf der Oberfläche der Halbleiter-Schaltungsanordnung zu Schäden im Kontaktanschluss und den darunter liegenden Bereichen der Halbleiter-Schaltungsanordnung führt.
- In der
JP S62- 158 338 A - In der JP H02- 94 452 A ist eine elektrische Verbindung zwischen einem Cu-Bond-Draht und einem Halbleiter-Chip sowie ein Verfahren zur Herstellung dieser Verbindung beschrieben. Dabei weist der Kontaktanschluss eine Beschichtung mit Au auf.
- Weiterhin wird in der
JP H04- 322 435 A JP S62-219 628 A - Aus der
JP S55- 78 536 A - Weiterhin beschreibt die
JP S63- 300 522 A - Aus der
US 2004 / 0 217 488 A1 - Die
JP 2002- 222 826 A - Weiterhin sind Bonddrähte auch noch aus der
US 2003 / 0 173 659 A1 US 2003 / 0 102 563 A1 - Schließlich ist aus der
US 5 917 707 A eine Halbleiteranordnung bekannt, die mit einer äußeren Kontakteinrichtung durch eine elektrische Verbindung aus einem elektrisch leitenden Draht verbunden ist. Diese Halbleiteranordnung hat einen inneren Kontaktanschluss, an den der Draht angeschlossen ist. Auf der Oberfläche der äußeren Kontakteinrichtung ist ein äußerer Kontaktanschluss vorgesehen, der zur Kontaktgabe für den Draht dient. - Weiterhin ist auf der Oberfläche des inneren Kontaktanschlusses, der Oberfläche des Drahtes und der Oberfläche des äußeren Kontaktanschlusses eine zusätzliche metallische Schicht vorgesehen. Für diese zusätzliche metallische Schicht können unter anderem auch Nickel oder Kupfer gewählt werden. Schließlich ist auch noch eine Polymer-Schutzschicht für den inneren Kontaktanschluss erwähnt.
- Es ist Aufgabe der Erfindung, eine Verbindungsanordnung zwischen einer Halbleiter-Schaltungsanordnung und einer äusseren Kontakteinrichtung, bei der mittels eines Drahtes die elektrische Verbindung zwischen einem inneren Kontaktanschluss auf der Oberfläche der Halbleiter-Schaltungsanordnung und einem äusseren Kontaktanschluss auf der Oberfläche der äusseren Kontakteinrichtung hergestellt wird, zur Verfügung zu stellen, die resistent gegenüber Umwelteinflüssen ist, eine stabile, zuverlässige elektrische Verbindung bei hoher Prozessausbeute gewährleistet und den Einsatz von Cu als Material für den Draht ermöglicht.
- Diese Aufgabe wird erfindungsgemäss durch die in Patentanspruch 1 angegebenen Merkmale gelöst. Eine vorteilhafte Weiterbildung der Erfindung ergibt sich aus dem Unteranspruch.
- Bei einer Verbindungsanordnung ist auf mindestens dem inneren Kontaktanschluss und auf dem Draht oder auf der Oberfläche von mindestens einem mit dem Draht verbundenen Kontaktanschluss und dem Draht oder auf beiden Kontaktanschlüssen eine zusätzliche metallische Schicht aufgebracht. Bei einer weiteren Verbindungsanordnung ist eine zusätzliche metallische Schicht nur auf dem inneren Kontaktanschluss aufgebracht, wobei der Durchmesser des Drahtes mindestens 500 µm beträgt oder der Draht aus Cu besteht. Der Durchmesser des Cu-Drahtes beträgt mindestens 50 µm für einen dünnen Draht und mindestens 300 µm für einen dicken Draht.
- Die metallische Schicht, die aus Zn-Keimen, einer Ni-Legierungsschicht, einer Pd-Schicht und einer Au-Schicht besteht, schützt den Kontaktanschluss vor Umwelteinflüssen während der elektrischen Charakterisierung und der weiteren Prozessierung, insbesondere indem Risse in der Metallisierung, die die Diffusion von Alkalimetall-Ionen begünstigen, vermieden oder abgedeckt werden und gegebenenfalls eine Oxidation der Metallisierungs-Oberfläche verhindert wird. Weiterhin ermöglicht die metallische Schicht den Einsatz von Cu als Material für den Draht und von besonders günstigen Prozessparametern bei der Herstellung der elektrischen Verbindung mittels eines Drahtes, stabilisiert die elektrische Verbindung mechanisch und macht sie gegen chemische Prozesse resistent.
- Vorteile der Verbindungsanordnung liegen in der hohen Ausbeute des Bondprozesses aufgrund der möglichen günstigen Prozessparameter und in der hohen Zuverlässigkeit der elektrischen Verbindung, wobei besondere Anforderungen an die Metallisierung auf der Oberfläche der Halbleiter-Schaltungsanordnung, wie z.B. mechanische Härte und/oder grosse Dicke, bei Verwendung von dicken Al- oder Au-Drähten (Durchmesser mindestens 500 µm) entfallen. Auch Ausfälle der elektrischen Verbindung, die aus Brüchen innerhalb des Drahtes nahe des Bondkontaktes resultieren, wie sie im Falle der Bondbeschichtung mit einem Kunststoff auftreten, werden vermieden. Die metallische Schicht wirkt ausserdem als Schutzschicht gegen Ätz- und Diffusionsprozesse bei der weiteren Prozessierung und beim späteren Einsatz des Moduls, das die Verbindungsanordnung enthält. Bei einer Abscheidung der metallischen Schicht auf dem Draht verhindert diese die Korrossion des Drahtes und erhöht damit die Zuverlässigkeit.
- Weiterhin ist das Aufbringen einer solchen metallischen Schicht auch auf andere Verbindungsanordnungen, bei denen der elektrische Kontakt auf andere Weise hergestellt wurde, z.B. durch Löten, vorteilhaft.
- Die metallische Schicht umfasst beliebige Ni-Verbindungen, insbesondere NiP, NiB, NiMo, NiRe oder tertiäre Materialkompositionen NiPX, wobei X Cu, W, Sn, Mo oder Sb umfasst. In diesem Zusammenhang beschreibt die Bezeichnung NiY oder NiPX eine Ni-Y- bzw. NiP-X-Legierung, das heisst elementares Ni mit einer Beimengung von Y bzw. P und X. Die Schicht hat eine Dicke von 0,1 bis 100 µm, wobei eine typische Dicke 1 bis 5 µm beträgt. Vorteile von NiP, NiB, NiMo, NiRe sowie den erwähnten tertiären Materialkompositionen sind die grosse Härte und die Möglichkeit, diese Metalle mit einem stromlosen Verfahren abscheiden zu können. Der Phosphor-Gehalt von 5 bis 10 % in NiP bzw. der Bor-Gehalt von 1 bis 5 % in NiB verhindert die Oxidation der Oberfläche der Ni-Schicht. Die metallische Schicht weist eine weitere Schicht auf, die Pd und Au umfasst und die metallische Schicht passiviert und chemisch resistent macht und für weitere Prozessschritte vorteilhaft ist. Beispielsweise verhindert sie die Oxidation der Oberfläche der metallischen Schicht und verbessert die Bondfähigkeit. Weiterhin ist eine einheitliche Beschichtung der Verbindungsanordnung mit einem Edelmetall vorteilhaft hinsichtlich weiterer Prozesse und der Zuverlässigkeit der Verbindungsanordnung. Die Pd und Au umfassende Schicht ist im Vergleich zur metallischen Schicht mit einer Dicke von einigen hundert nm dünn.
- Die metallische Schicht bzw. das Schichtsystem kann den Erfordernissen und Gegebenheiten der Halbleiter-Schaltungsanordnung und der äusseren Kontakteinrichtung sowie des Herstellungsprozesses der elektrischen Verbindung angepasst werden, insbesondere bezüglich der verwandten Materialien und den Prozessparametern der Abscheidung.
- In einer besonders bevorzugten Ausführungsform kann noch eine weitere mechanische Stabilisierung der elektrischen Verbindung und ein Schutz des Bondkontaktes vor dem Angriff von Moldcompound-Materialien durch das Aufbringen eines harten, hochtemperaturfesten Kunststoffes auf den Bondkontakt erfolgen.
- Die metallische Schicht wird nach dem Herstellen der elektrischen Verbindung zwischen der Halbleiter-Schaltungsanordnung und der äusseren Kontakteinrichtung aufgebracht und umhüllt damit mindestens einen der mit dem Draht verbundenen Kontaktanschlüsse als auch den Draht selbst.
- Die metallische Schicht wird vor dem Herstellen der elektrischen Verbindung zur äusseren Kontakteinrichtung abgeschieden. Dies kann sowohl im Wafer-Verband als auch auf der schon vereinzelten Halbleiter-Schaltungsanordnung geschehen, so dass sich die metallische Schicht nur auf dem inneren Kontaktanschluss befindet. Wird die metallische Schicht erst nach der Montage der Halbleiter-Schaltungsanordnung auf einem Träger, der auch die äussere Kontakteinrichtung enthält, abgeschieden, so befindet sie sich sowohl auf dem inneren als auch dem äusseren Kontaktanschluss.
- In einer Ausführungsform wird die metallische Schicht erstmals wie oben beschrieben vor dem Herstellen der elektrischen Verbindung und dann nochmals nach dem Herstellen der elektrischen Verbindung abgeschieden. Sie befindet sich damit auf mindestens dem inneren Kontaktanschluss und umhüllt mindestens einen der mit dem Draht verbundenen Kontaktanschlüsse als auch den Draht selbst.
- Weitere Ausführungsformen der vorliegenden Erfindung werden durch Kombinationen der oben beschriebenen Ausführungsformen gebildet.
- Eine weitere Ausführungsform der erfindungsgemässen Verbindungsanordnung ist durch eine zusätzliche Schicht aus hartem, hochtemperaturfestem Kunststoff über dem mit dem Draht verbundenen inneren Kontaktanschluss gekennzeichnet, die aufgebracht wird und eine zusätzliche mechanische Stabilisierung des Kontaktes bewirkt.
- Für die Halbleiter-Schaltungsanordnung sind in besonderer Weise Leistungshalbleitermodule, wie beispielsweise IGBT-Module, vorgesehen, die Auswahl ist aber nicht darauf beschränkt.
- Als äußere Kontakteinrichtung können verschiedene Trägersubstrate, Multichipmodule, Gehäuseformen und auch andere Halbleiter-Schaltungsanordnungen (chip-to-chip-Bonden) zum Einsatz kommen.
- Als Draht zur Herstellung der elektrischen Verbindung zwischen der Halbleiter-Schaltungsanordnung und der äusseren Kontakteinrichtung können bevorzugt Al- und Au-Drähte und auch Cu-Drähte verwandt werden. Es sind aber auch andere Materialien möglich. Der Draht kann dabei einen runden oder mehreckigen Querschnitt haben. Unter einem „Draht“ soll also beispielsweise auch ein Band oder dergleichen verstanden werden.
- Die metallische Schicht kann stromlos oder in einem elektrogalvanischen Prozess abgeschieden werden. Für eine stromlose Beschichtung ist zuerst die Benetzung der Oberfläche mit Benetzungskeimen notwendig, die sich auf allen freiliegenden metallischen Oberflächen ablagern. Danach erfolgt die Abscheidung der metallischen Schicht aus NiP oder NiB stromlos an den Stellen, wo die Benetzung stattgefunden hat. Auf nichtmetallischen Oberflächen, wie beispielsweise der Passivierung der Halbleiter-Schaltungsanordnung, wird keine Schicht abgeschieden. Weiterhin wird eine Passivierungsschicht, die Pd und Au umfasst, auf der metallischen Schicht abgeschieden.
- Bei Nutzung eines elektrogalvischen Abscheideprozesses entfällt die Benetzung, da keine Bekeimung der zu beschichtenden Oberfläche notwendig ist. Die metallische Schicht wird dabei nur auf metallischen Oberflächen, die ein bestimmtes elektrisches Potential aufweisen, abgeschieden. Weitere Vorteile sind die Möglichkeit, auch andere Metalle, wie z.B. Cu abzuscheiden und dabei höhere Abscheideraten zu erzielen. Da diese Abscheidung unter Stromfluss erfolgt, ist es wichtig, dass eine elektrische Verbindung zwischen der Halbleiter-Schaltungsanordnung und der äusseren Kontakteinrichtung besteht.
- Das Verfahren zur Erzeugung der erfindungsgemässen metallischen Schicht ist einfach und leicht in den Herstellungsprozess der Halbleiter-Schaltungsanordnung auf Wafer-Ebene oder in den Gesamt-Montage-Prozess der Halbleiter-Schaltungsanordnung zu integrieren und ersetzt damit aufwändige oder komplizierte Alternativverfahren, wie beispielsweiese eine Stabilisierung des Bondkontaktes mit einer Kunststoff-Beschichtung oder die Optimierung der Metallisierung auf der Oberfläche der Halbleiter-Schaltungsanordnung und der Parameter des Bondprozesses.
- Nachfolgend wird die Erfindung anhand der Zeichnungen näher erläutert, wobei für einander entsprechende Bauteile und Schichten die gleichen Bezugszeichen verwendet werden. Es zeigen:
-
1 eine schematische Darstellung einer herkömmlichen Verbindungsanordnung, -
2A bis2D schematische Darstellungen einer Verbindungsanordnung, wobei die2A und2C jeweils Ausführungsformen der vorliegenden Erfindung und die2B und2D jeweils erläuternde Beispiele zeigen, -
3A bis3D schematische Darstellungen eines Verfahrens zum Herstellen der Halbleiteranordnung in Flussdiagrammen, wobei die3B und3D jeweils erläuternde Beispiele zeigen, und -
4 eine perspektivische Darstellung einer fertig montierten Halbleiter-Schaltungsanordnung unter Verwendung der erfindungsgemäßen Verbindungsanordnung. - In
1 ist eine herkömmliche Verbindungsanordnung dargestellt. Eine Halbleiter-Schaltungsanordnung1 hat eine Oberseite11 und eine Unterseite12 . Eine äussere Kontakteinrichtung3 weist eine Oberseite31 auf. Die Halbleiter-Schaltungsanordnung1 ist mittels einer Verbindungsschicht2 auf der äusseren Kontakteinrichtung3 so befestigt, dass sich die Unterseite12 der Halbleiter-Schaltungsanordnung1 und die Oberseite31 der äusseren Kontakteinrichtung3 gegenüber stehen. Auf der Oberfläche der Oberseite11 der Halbleiter-Schaltungsanordnung1 befindet sich ein innerer Kontaktanschluss4 , und auf der Oberfläche der Oberseite31 der äusseren Kontakteinrichtung3 ist ein äusserer Kontaktanschluss5 angeordnet. Dabei sind der Bereich der äusseren Kontakteinrichtung3 , der sich unterhalb der Halbleiter-Schaltungsanordnung1 befindet, und der Bereich der äusseren Kontakteinrichtung3 , auf dem sich der äussere Kontakt5 befindet, elektrisch voneinander isoliert und können sogar mechanisch voneinander getrennt sein. Die elektrische Verbindung zwischen dem inneren Kontaktanschluss4 und dem äusseren Kontaktanschluss5 ist mittels eines Drahtes6 aus beispielsweise Al oder Au oder Cu hergestellt. Der Draht6 kann durch ein Wedge-Wedge- oder ein Ball-Wedge-Verfahren mit den Kontaktanschlüssen4 und5 verbunden werden. - In
2A , die eine erfindungsgemässe Verbindungsanordnung darstellt, umhüllt eine metallische Schicht7 die noch freiliegenden Oberflächen der mit dem Draht6 verbundenen inneren und äusseren Kontaktanschlüsse4 und5 sowie den Draht6 . - Die Schicht
7 besteht aus Zn-Keimen71 , einer Ni-Legierungs-Schicht72 , insbesondere NiP oder NiB, und aus einer Pd-Schicht73 und einer Au-Schicht74 (vgl. Einzelheit A in2A ) . - In
2B , die ein erläuterndes Beispiel darstellt, ist die metallische Schicht7 auf dem inneren und dem äusseren Kontaktanschluss4 und5 aufgebracht. In einer anderen (nicht dargestellten) Verbindungsanordnung ist die metallische Schicht7 nur auf dem inneren Kontaktanschluss4 aufgebracht, wobei der Draht6 einen Durchmesser von mindestens 500 µm aufweist oder aus Cu besteht. - Die metallische Schicht
7 kann aber auch auf dem inneren und äusseren Kontaktanschluss4 und5 und zusätzlich auf den noch freiliegenden Oberflächen der mit dem Draht6 verbundenen inneren und äusseren Kontaktanschlüsse4 und5 sowie dem Draht6 , wie in2A dargestellt, aufgebracht sein. Eine solche Verbindungsanordnung ist in2C gezeigt, wobei die zweite metallische Schicht mit 7' bezeichnet und mit der ersten metallischen Schicht7 im Aufbau identisch ist. Ebenfalls möglich (hier aber nicht dargestellt) ist es, dass sich die metallische Schicht7 auf dem inneren Kontaktanschluss4 und zusätzlich auf den noch freiliegenden Oberflächen der mit dem Draht6 verbundenen inneren und äusseren Kontaktanschlüsse4 und5 sowie dem Draht6 , wie in2A dargestellt, befindet. - Eine weitere Verbindungsanordnung ist in einem erläuternden Beispiel in
2D gezeigt, wo sich die metallische Schicht 7 auf dem inneren und äusseren Kontaktanschluss4 und5 wie in der Verbindungsanordnung von2B befindet und auf dem mit dem Draht6 verbundenen inneren Kontaktanschluss4 noch eine zusätzliche Schicht8 aus hartem, hochtemperaturfestem (Tschmelz > 200°C) Kunststoff aufgebracht ist. In einer weiteren (hier nicht dargestellten) Verbindungsanordnung ist die metallische Schicht7 nur auf dem inneren Kontaktanschluss4 aufgebracht und der mit dem Draht verbundene innere Kontaktanschluss4 zusätzlich mit einer Schicht8 aus einem oben beschriebenen Kunststoff umhüllt. - In
3 sind schematisch die Verfahrensabläufe zur Herstellung der in2 dargestellten Verbindungsanordnungen aufgezeigt. In einem Schritt41 wird die metallische Schicht 7 aufgebracht und in einem Schritt42 wird die elektrische Verbindung zwischen der Halbleiter-Schaltungsanordnung1 und der äusseren Kontakteinrichtung3 mittels des Drahtes6 gebildet. - Bei Nutzung eines stromlosen Abscheideverfahrens gliedert sich der Schritt
41 in folgende Unterschritte:
- A Eintauchen in ein Benetzungsbad und Abscheidung von Keimen auf allen freiliegenden Metall-Oberflächen,
- B Eintauchen in ein Bad aus einer Ni-Legierung und Abscheidung einer Ni-Legierungs-Schicht, insbesondere NiP oder NiB, und optional
- C Eintauchen in ein Pd- und Au-Bad und Abscheidung einer Pd- und einer Au-Schicht.
Das Benetzungsbad enthält im Allgemeinen Zn, das als Keim für die Ni-Legierungs-Abscheidung, insbesondere NiP oder NiB, dient. Besteht die Metallisierung der Kontaktanschlüsse aus Cu, so dient Pd als Keim für die spätere NiP- oder NiB-Abscheidung. Die Dicke der abgeschiedenen NiP- oder NiB-Schicht liegt im Bereich von 0,1 bis 100 µm, wobei eine typische Dicke 1 bis 5 µm beträgt. Der Phosphor-Gehalt in NiP beträgt typischerweise 5 bis 10 % und der Bor-Gehalt in NiB typischerweise 1 bis 5 %. Das Schichtsystem aus Pd und Au ist im Vergleich zur NiP- oder NiB-Schicht dünn. Die Dicke der Pd- oder Au-Schicht beträgt typischerweise 20 bis 400 nm, die Dicke einer zusätzlichen Au-Schicht auf einer Pd-Schicht typischerweise 40 bis 80 nm. Das Schichtsystem passiviert die Oberfläche der NiP- oder NiB-Schicht, verhindert deren Oxidation und verbessert die Bondfähigkeit.
Die Schicht 7 besteht so beispielsweise aus Zn-Keimen 71 , einer Ni-Legierungs-Schicht 72 und aus einer Pd-Schicht 73 und einer Au-Schicht 74 (vgl. Einzelheit A in 2A ).
Die Abscheidung der metallischen Schicht kann sowohl nach dem Vereinzeln der Halbleiter-Schaltungsanordnung und der Montage auf der äusseren Kontakteinrichtung als auch vor dem Vereinzeln im Wafer-Verband durchgeführt werden.
Bei Nutzung eines elektrogalvischen Abscheideprozesses in Schritt 41 entfällt der Unterschritt A, da keine Bekeimung der zu beschichtenden Oberfläche notwendig ist. Weitere Vorteile sind die Möglichkeit, auch andere Metalle, wie z.B. Cu, abzuscheiden und dabei höhere Abscheideraten zu erzielen.
Der Schritt 42 beinhaltet die Herstellung der elektrischen Verbindung zwischen der Halbleiter-Schaltungsanordnung 1 und der äusseren Kontakteinrichtung 3 mittels des Drahtes 6 .
In 3D ist ein weiteres erläuterndes Beispiel dargestellt, bei dem nach dem Prozessablauf, wie er in dem ersten erläuternden Beispiel beschrieben ist, die elektrische Verbindung auf dem inneren Kontaktanschluss 4 durch das Aufbringen der Schicht 8 aus einem harten, hochtemperaturfesten Kunststoff in einem Schritt 43 mechanisch stabilisiert und damit die Zuverlässigkeit weiter erhöht wird. Im Ergebnis erhält man eine Verbindungsanordnung, wie sie in 2D dargestellt ist.
Claims (2)
- Verbindungsanordnung zwischen einer Halbleiter-Schaltungsanordnung (1) und einer äusseren Kontakteinrichtung (3), bei der die Unterseite (12) der Halbleiter-Schaltungsanordnung (1) und die Oberseite (31) der äusseren Kontakteinrichtung (3) gegenüber zueinander vorgesehen sind und eine elektrische Verbindung zwischen einem inneren Kontaktanschluss (4) auf der zur Unterseite gegenüberliegenden Oberseite (11) der Halbleiter-Schaltungsanordnung (1) und einem äusseren Kontaktanschluss (5) auf der Oberfläche der äusseren Kontakteinrichtung (3) aus einem elektrisch leitenden Draht (6) besteht, wobei auf der Oberfläche mindestens des inneren Kontaktanschlusses (4) und auf der Oberfläche des Drahtes (6) eine zusätzliche metallische Schicht (7, 72) angeordnet ist, dadurch gekennzeichnet, dass die metallische Schicht (7) aus Zn-Keimen (71), einer Ni-Legierungsschicht (72), einer Pd-Schicht (73) und einer Au-Schicht (74) besteht.
- Verbindungsanordnung nach
Anspruch 1 , dadurch gekennzeichnet, dass der Draht (6) aus Al oder Au besteht.
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US11/472,653 US7709938B2 (en) | 2005-06-22 | 2006-06-22 | Arrangement for electrically connecting semiconductor circuit arrangements to an external contact device and method for producing the same |
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Also Published As
Publication number | Publication date |
---|---|
US8030744B2 (en) | 2011-10-04 |
US7709938B2 (en) | 2010-05-04 |
US20100213613A1 (en) | 2010-08-26 |
US20070001283A1 (en) | 2007-01-04 |
DE102005028951A1 (de) | 2006-12-28 |
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