JPH0294452A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPH0294452A
JPH0294452A JP63246016A JP24601688A JPH0294452A JP H0294452 A JPH0294452 A JP H0294452A JP 63246016 A JP63246016 A JP 63246016A JP 24601688 A JP24601688 A JP 24601688A JP H0294452 A JPH0294452 A JP H0294452A
Authority
JP
Japan
Prior art keywords
bonding
film
bonding pad
wire
pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63246016A
Other languages
English (en)
Inventor
Norihiko Endo
徳彦 遠藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP63246016A priority Critical patent/JPH0294452A/ja
Publication of JPH0294452A publication Critical patent/JPH0294452A/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
    • H01L2224/02165—Reinforcing structures
    • H01L2224/02166—Collar structures
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05073—Single internal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05124—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
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    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05644—Gold [Au] as principal constituent
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48838—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48844—Gold (Au) as principal constituent
    • H—ELECTRICITY
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    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
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    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
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    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
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    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体装置に関し、特にボンディングパッドの
構造に関する。
〔従来の技術〕
従来の半導体装置に形成されるボンディングパッドＩＯ
Ａは、第２図に示すようにＡＩから形成されており、そ
の表面は露出していた。そして、このボンディングパッ
ドＩＯＡとリード（図示せず）とを接続するボンディン
グワイヤ６ＡはＡｕから構成されていた。
〔発明が解決しようとする課題〕
上述した従来の半導体装置に設けられたホンディングパ
ッドは、その表面が露出しているので、材料のＡＩが水
などの不純物に腐食されやすいという欠点がある。又、
ボンディングワイヤ６ＡはＡｕである為、いわゆるパー
プルブレーグとよばれるＡｕ−Ａｌ合金ができ、接続強
度が劣化するという欠点がある。
〔課題を解決するための手段〕
本発明の半導体装置は、半導体基板上の絶縁膜上に設け
られたＡＩ膜とＡ　ｌｌ膜とからなる２ｆｔ４構造のボ
ンディングパッドと、前記ボンディングパッドとリード
とを接続するＣｕからなるボンディングワイヤとを含ん
で構成される。
〔実施例〕
次に本発明を図面を参照して説明する。
第１図は本発明の一実施例のボンディングパッド近ｆ？
ｔの断面図である９ 第１図において、シリコン基板１の上のＳｉＯ□等から
なる絶縁膜２上には、ＡＩ膜３とＡｕ膜４とからなるボ
ンディングパッド１０が形成されており、そして、この
ボンディングパッド１０とリード（図示せず）とをＣｕ
からなるボンディングワイヤ６が接続している。尚５は
ＰＳＧＩｉＩである。
このように構成された本実施例によれば、ボンディング
パッド１０の表面層はＡ　ｕ　ｐｌｉ４４で形成されて
いるため、水等による腐食を防止することができる。更
に、ボンディングワイヤ６がＣｕから構成されているた
め、ボンディングパッド１０との接続強度を高めること
ができる。
〔発明の効果〕
以上説明したように本発明は、半導体装置のボンディン
グパッドをＡｌ［ＩとＡｕ膜で形成し、更にボンディン
グワイヤをＣｕから構成することにより、ボンディング
パッドの耐腐食性とボンディング強度の向上をはかるこ
とができる効果がある。
【図面の簡単な説明】
第１図は本発明の一実施例のボンデインクパッド近傍の
断面図、第２図は従来の半導体装置のボンディングパッ
ド近傍の断面図である。 １・・・シリコン基板、２・・・絶縁膜、３・・・Ａｌ
膜、４・・・Ａ　１１膜、５・・・ＰＳＧ膜、６．６Ａ
・・・ボンディングワイヤ、１０．ＩＯＡ・・・ホンデ
ィングパッド。

Claims (1)

    【特許請求の範囲】
  1. 半導体基板上の絶縁膜上に設けられたＡｌ膜とＡｕ膜と
    からなる２層構造のボンディングパッドと、前記ボンデ
    ィングパッドとリードとを接続するＣｕからなるボンデ
    ィングワイヤとを含むことを特徴とする半導体装置。
JP63246016A 1988-09-29 1988-09-29 半導体装置 Pending JPH0294452A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63246016A JPH0294452A (ja) 1988-09-29 1988-09-29 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63246016A JPH0294452A (ja) 1988-09-29 1988-09-29 半導体装置

Publications (1)

Publication Number Publication Date
JPH0294452A true JPH0294452A (ja) 1990-04-05

Family

ID=17142205

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63246016A Pending JPH0294452A (ja) 1988-09-29 1988-09-29 半導体装置

Country Status (1)

Country Link
JP (1) JPH0294452A (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005167004A (ja) * 2003-12-03 2005-06-23 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
US7709938B2 (en) 2005-06-22 2010-05-04 Infineon Technologies Ag Arrangement for electrically connecting semiconductor circuit arrangements to an external contact device and method for producing the same
JP2010157683A (ja) * 2008-12-03 2010-07-15 Renesas Technology Corp 半導体集積回路装置
US8198721B2 (en) 2005-07-18 2012-06-12 Infineon Technologies Ag Semiconductor module

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005167004A (ja) * 2003-12-03 2005-06-23 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
US7709938B2 (en) 2005-06-22 2010-05-04 Infineon Technologies Ag Arrangement for electrically connecting semiconductor circuit arrangements to an external contact device and method for producing the same
US8030744B2 (en) 2005-06-22 2011-10-04 Infineon Technologies Ag Arrangement for electrically connecting semiconductor circuit arrangements to an external contact device and method for producing the same
DE102005028951B4 (de) * 2005-06-22 2018-05-30 Infineon Technologies Ag Anordnung zur elektrischen Verbindung einer Halbleiter-Schaltungsanordnung mit einer äusseren Kontakteinrichtung
US8198721B2 (en) 2005-07-18 2012-06-12 Infineon Technologies Ag Semiconductor module
DE102005033469B4 (de) * 2005-07-18 2019-05-09 Infineon Technologies Ag Verfahren zum Herstellen eines Halbleitermoduls
JP2010157683A (ja) * 2008-12-03 2010-07-15 Renesas Technology Corp 半導体集積回路装置

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