JPH0294452A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPH0294452A JPH0294452A JP63246016A JP24601688A JPH0294452A JP H0294452 A JPH0294452 A JP H0294452A JP 63246016 A JP63246016 A JP 63246016A JP 24601688 A JP24601688 A JP 24601688A JP H0294452 A JPH0294452 A JP H0294452A
- Authority
- JP
- Japan
- Prior art keywords
- bonding
- film
- bonding pad
- wire
- pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 claims description 4
- 238000005260 corrosion Methods 0.000 abstract description 5
- 230000007797 corrosion Effects 0.000 abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 150000002739 metals Chemical class 0.000 abstract 1
- 239000012528 membrane Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
- H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
- H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
- H01L2224/02165—Reinforcing structures
- H01L2224/02166—Collar structures
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05073—Single internal layer
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- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05124—Aluminium [Al] as principal constituent
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- H01L2224/45147—Copper (Cu) as principal constituent
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- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
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- H01L2224/48505—Material at the bonding interface
- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
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- H01L2224/48505—Material at the bonding interface
- H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
- H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48838—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/48844—Gold (Au) as principal constituent
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Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
め要約のデータは記録されません。
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置に関し、特にボンディングパッドの
構造に関する。
構造に関する。
従来の半導体装置に形成されるボンディングパッドIO
Aは、第2図に示すようにAIから形成されており、そ
の表面は露出していた。そして、このボンディングパッ
ドIOAとリード(図示せず)とを接続するボンディン
グワイヤ6AはAuから構成されていた。
Aは、第2図に示すようにAIから形成されており、そ
の表面は露出していた。そして、このボンディングパッ
ドIOAとリード(図示せず)とを接続するボンディン
グワイヤ6AはAuから構成されていた。
上述した従来の半導体装置に設けられたホンディングパ
ッドは、その表面が露出しているので、材料のAIが水
などの不純物に腐食されやすいという欠点がある。又、
ボンディングワイヤ6AはAuである為、いわゆるパー
プルブレーグとよばれるAu−Al合金ができ、接続強
度が劣化するという欠点がある。
ッドは、その表面が露出しているので、材料のAIが水
などの不純物に腐食されやすいという欠点がある。又、
ボンディングワイヤ6AはAuである為、いわゆるパー
プルブレーグとよばれるAu−Al合金ができ、接続強
度が劣化するという欠点がある。
本発明の半導体装置は、半導体基板上の絶縁膜上に設け
られたAI膜とA ll膜とからなる2ft4構造のボ
ンディングパッドと、前記ボンディングパッドとリード
とを接続するCuからなるボンディングワイヤとを含ん
で構成される。
られたAI膜とA ll膜とからなる2ft4構造のボ
ンディングパッドと、前記ボンディングパッドとリード
とを接続するCuからなるボンディングワイヤとを含ん
で構成される。
次に本発明を図面を参照して説明する。
第1図は本発明の一実施例のボンディングパッド近f?
tの断面図である9 第1図において、シリコン基板1の上のSiO□等から
なる絶縁膜2上には、AI膜3とAu膜4とからなるボ
ンディングパッド10が形成されており、そして、この
ボンディングパッド10とリード(図示せず)とをCu
からなるボンディングワイヤ6が接続している。尚5は
PSGIiIである。
tの断面図である9 第1図において、シリコン基板1の上のSiO□等から
なる絶縁膜2上には、AI膜3とAu膜4とからなるボ
ンディングパッド10が形成されており、そして、この
ボンディングパッド10とリード(図示せず)とをCu
からなるボンディングワイヤ6が接続している。尚5は
PSGIiIである。
このように構成された本実施例によれば、ボンディング
パッド10の表面層はA u pli44で形成されて
いるため、水等による腐食を防止することができる。更
に、ボンディングワイヤ6がCuから構成されているた
め、ボンディングパッド10との接続強度を高めること
ができる。
パッド10の表面層はA u pli44で形成されて
いるため、水等による腐食を防止することができる。更
に、ボンディングワイヤ6がCuから構成されているた
め、ボンディングパッド10との接続強度を高めること
ができる。
以上説明したように本発明は、半導体装置のボンディン
グパッドをAl[IとAu膜で形成し、更にボンディン
グワイヤをCuから構成することにより、ボンディング
パッドの耐腐食性とボンディング強度の向上をはかるこ
とができる効果がある。
グパッドをAl[IとAu膜で形成し、更にボンディン
グワイヤをCuから構成することにより、ボンディング
パッドの耐腐食性とボンディング強度の向上をはかるこ
とができる効果がある。
第1図は本発明の一実施例のボンデインクパッド近傍の
断面図、第2図は従来の半導体装置のボンディングパッ
ド近傍の断面図である。 1・・・シリコン基板、2・・・絶縁膜、3・・・Al
膜、4・・・A 11膜、5・・・PSG膜、6.6A
・・・ボンディングワイヤ、10.IOA・・・ホンデ
ィングパッド。
断面図、第2図は従来の半導体装置のボンディングパッ
ド近傍の断面図である。 1・・・シリコン基板、2・・・絶縁膜、3・・・Al
膜、4・・・A 11膜、5・・・PSG膜、6.6A
・・・ボンディングワイヤ、10.IOA・・・ホンデ
ィングパッド。
Claims (1)
- 半導体基板上の絶縁膜上に設けられたAl膜とAu膜と
からなる2層構造のボンディングパッドと、前記ボンデ
ィングパッドとリードとを接続するCuからなるボンデ
ィングワイヤとを含むことを特徴とする半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63246016A JPH0294452A (ja) | 1988-09-29 | 1988-09-29 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63246016A JPH0294452A (ja) | 1988-09-29 | 1988-09-29 | 半導体装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0294452A true JPH0294452A (ja) | 1990-04-05 |
Family
ID=17142205
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63246016A Pending JPH0294452A (ja) | 1988-09-29 | 1988-09-29 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0294452A (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005167004A (ja) * | 2003-12-03 | 2005-06-23 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
US7709938B2 (en) | 2005-06-22 | 2010-05-04 | Infineon Technologies Ag | Arrangement for electrically connecting semiconductor circuit arrangements to an external contact device and method for producing the same |
JP2010157683A (ja) * | 2008-12-03 | 2010-07-15 | Renesas Technology Corp | 半導体集積回路装置 |
US8198721B2 (en) | 2005-07-18 | 2012-06-12 | Infineon Technologies Ag | Semiconductor module |
-
1988
- 1988-09-29 JP JP63246016A patent/JPH0294452A/ja active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005167004A (ja) * | 2003-12-03 | 2005-06-23 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
US7709938B2 (en) | 2005-06-22 | 2010-05-04 | Infineon Technologies Ag | Arrangement for electrically connecting semiconductor circuit arrangements to an external contact device and method for producing the same |
US8030744B2 (en) | 2005-06-22 | 2011-10-04 | Infineon Technologies Ag | Arrangement for electrically connecting semiconductor circuit arrangements to an external contact device and method for producing the same |
DE102005028951B4 (de) * | 2005-06-22 | 2018-05-30 | Infineon Technologies Ag | Anordnung zur elektrischen Verbindung einer Halbleiter-Schaltungsanordnung mit einer äusseren Kontakteinrichtung |
US8198721B2 (en) | 2005-07-18 | 2012-06-12 | Infineon Technologies Ag | Semiconductor module |
DE102005033469B4 (de) * | 2005-07-18 | 2019-05-09 | Infineon Technologies Ag | Verfahren zum Herstellen eines Halbleitermoduls |
JP2010157683A (ja) * | 2008-12-03 | 2010-07-15 | Renesas Technology Corp | 半導体集積回路装置 |
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