JP2005167004A - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JP2005167004A JP2005167004A JP2003404571A JP2003404571A JP2005167004A JP 2005167004 A JP2005167004 A JP 2005167004A JP 2003404571 A JP2003404571 A JP 2003404571A JP 2003404571 A JP2003404571 A JP 2003404571A JP 2005167004 A JP2005167004 A JP 2005167004A
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Abstract
【解決手段】半導体素子搭載領域と、前記半導体素子搭載領域1pの近傍に、一端が位置するように配設された複数のリード1a,1b、1cと、前記半導体素子搭載領域に搭載され、前記リードの少なくとも一つにボンディングワイヤ5を介して電気的に接続された半導体チップ3と、前記半導体チップ3を被覆すると共に、前記リード1a、1b、1cの外方の端部を外部に露呈せしめる樹脂パッケージ2とを備えた半導体装置において、前記樹脂パッケージ2は、全高0.33mm以下で構成される。
【選択図】図4
Description
電気音響変換器、例えばコンデサマイクロホンは、導電面を有する振動膜とこれに並行し空気層を介して対向設置された導電性の固定電極との間の静電容量が、音圧によって駆動された振動膜の振動に起因して変化することから、この静電容量の変化を振動膜上の音圧に比例する量として検出するように構成したものである。
この構成により、リード上にボールボンドし、リード上から垂直にあがり、その後水平に導き、半導体チップ表面のボンディングパッドにステッチボンドすることにより薄型化が可能となる。
この構成により、ステッチボンド位置がボンディンパッドの中心よりも内側に偏心するため、引き回し側でワイヤが接触してもボンディングパッド上であるためエッジ短絡のおそれもない。
この構成により、ワイヤの張架方向にボンディングパッドが伸張しているため、引き回し側でワイヤが接触してもボンディングパッド上であることが多く、エッジ短絡のおそれもない。
この構成により、前記半導体チップのエッジと垂直方向に伸張する辺が長手方向となるため、引き回し側でワイヤが接触してもボンディングパッド上であることが多く、エッジ短絡のおそれもない。
これにより、ワイヤのステッチボンドの衝撃を受けにくく緩衝材として作用するため、半導体チップのボンディングパッドにクラックが生じるのを防ぐことができる。
これにより、ワイヤのステッチボンドの衝撃を受けにくく緩衝材として作用するため、半導体チップのボンディングパッドにクラックが生じるのを防ぐことができる上、比抵抗が小さく、使用時およびボンディング時に温度上昇が少ないため、ボンディングパッドの信頼性は更に向上する。
この構成により、ボンディングパッドが十分に厚いため、ワイヤのステッチボンドの衝撃を受けにくく、緩衝材として作用し、半導体チップのボンディングパッドにクラックが生じるのを防ぐことができる。
この構成により、半導体装置のより薄型化をはかることができる。
この構成により、ボンディングワイヤが展性に富むため、逆ワイヤボンディングにより若干のストレスがかかったとしてもワイヤ切れを生じるのを防ぐことができる。
この構成により、ボンディングワイヤをリードから半導体チップ上に張架するため、高さを低く押さえることができる。
この構成により、ステッチボンド位置がボンディンパッドの中心よりも内側に偏心するため、引き回し側でワイヤが接触してもボンディングパッド上であるためエッジ短絡のおそれもない。
この構成により、ステッチボンド位置がボンディンパッドの中心よりも十分に内側に位置しているため、引き回し側でワイヤが接触してもボンディングパッド上であるためエッジ短絡のおそれもない。
(実施の形態)
図1は、本発明の実施の形態の半導体装置を示す上面図、図2は同半導体装置の断面図、図3は封止樹脂を除いた状態を示す図、図4は、同半導体装置のワイヤボンディング状態を示す要部拡大図、図5(a)および(b)は半導体チップの上面図およびそのA−A断面図、図6および図7は、ワイヤボンディング操作を示す説明図である。
この半導体装置は、ボンディングワイヤ5をリード1a、1b、1cから、半導体チップ3のボンディングパッド3bに向けて逆ワイヤボンディングにより張架したことを特徴とするものである。このボンディングパッド3bは図5に示すように、ボンディングパッド3bがボンディングワイヤ5の張架方向と長手方向とがほぼ一致するように形成された長方形状をなしている。またこのボンディングパッド3bは膜厚5±1μmのニッケルめっき層上に膜厚0.2±0.05μmのAu層で被覆したものとなっており、半導体チップ表面から7μmの高さに形成されている。そしてボンディングワイヤは図4に示すように、板厚0.10mmのリード1a、1b、1c上にボールボンドした後、垂直方向に引き上げられ、半導体チップ表面から10μm程度上がったところで水平方向に曲げられて半導体チップのボンディングパッド上に張架せしめられている。
またこの樹脂パッケージの外径は1.2mm×0.8mm×0.33mmであった。
まず、このリードフレームの製造方法について説明する。
この方法では、条材を打ち抜き加工し、図3に示すように、送り穴を備えたサイドバーの間に、ダイパッド1pと、これを支持する吊りリード1cと、リード端子1a、1bとからなるリードフレームユニットが多数個順次配設されたリードフレーム本体の形状加工を行う。そしてめっきを必要とする場合にはこのようにして形成されたリードフレーム本体のリード部に、電解めっきをおこないリードフレームを形成する。
そして図7(a)に示すように、リード端子1bにキャピラリ10によってボールを形成し、この後、図7(b)に示すように、ボンディングワイヤ5をボール位置から垂直方向に上にあげこの後水平方向に曲げて引っ張る。
そして図7(c)に示すように、ボンディングワイヤ5を半導体チップ3のボンディングパッド3bにステッチボンドをうつ。図6はこのステッチボンドの状態を示す図であり、キャピラリをボンディングパッド3bに対して垂直におくことにより、半導体チップへのエッジ短絡を防止することができ、信頼性の高いボンディング状態を得ることができる。このときボンディングパッド3bを構成する長方形の中心よりも10μm以上内側にステッチボンドをうつ。これにより、ボンディングワイヤが接触するのはボンディングパッド上となり、ワイヤの半導体チップへのエッジ短絡のおそれはない。
このようにして、ワイヤボンディングによりリードと半導体チップとの電気的接続が行なわれる。
なお、前記実施の形態では、エッジ短絡もなく、またボンディングパッドの割れも皆無であった。これはボンディングパッドが厚いNi−Au層からなるめっき層を具備しており、緩衝効果がある点も有効に作用しているものと思われる。
なお前記実施の形態ではボンディングパッドの表面から半導体チップ表面の高さが10μmとしたが、他は同様にしてめっき層の膜厚を変化させて半導体チップのボンディングパッドのクラックの発生状況を観察した。その結果得られた不良数を次表に示す。いずれも母数は100とする。
1b リードージ
1p ダイパッド
2 樹脂パッケージ
3 半導体チップ
3b ボンディングパッド
4 ボールバンプ
5 ボンディングワイヤ
Claims (13)
- 半導体素子搭載領域と、前記半導体素子搭載領域の近傍に、一端が位置するように配設された複数のリードと、
前記半導体素子搭載領域に搭載され、前記リードの少なくとも一つにボンディングワイヤを介して電気的に接続された半導体チップと、
前記半導体チップを被覆すると共に、前記リードの外方の端部を外部に露呈せしめる樹脂パッケージとを備えた半導体装置において、
前記樹脂パッケージは、全高0.33mm以下で構成されたことを特徴とする半導体装置。 - 前記ボンディングワイヤは、前記リード上を開始点とし、前記半導体チップのボンディングパッドを構成する電極表面上まで張架される逆ボンディングワイヤである請求項1に記載の半導体装置。
- 前記ボンディングワイヤは、前記ボンディングパッドの中心よりも前記半導体チップの内側に偏心した位置で接合されている請求項2に記載の半導体装置。
- 前記ボンディングパッドは、ボンディングワイヤの張架方向と長手方向とがほぼ一致するように形成された長方形状をなす請求項3に記載の半導体装置。
- 前記ボンディングパッドは、前記半導体チップのエッジと垂直方向に伸張する辺が長手方向となるように形成された長方形状をなす請求項3に記載の半導体装置。
- 前記ボンディングパッドは、Ni−Au層で被覆されている請求項1乃至5のいずれかに記載の半導体装置。
- 前記ボンディングパッドは、Au層で被覆されている請求項1乃至5のいずれかに記載の半導体装置。
- 前記ボンディングパッドのボンディング面は前記半導体チップ表面から5μm以上の高さにある請求項1乃至7のいずれかに記載の半導体装置。
- 前記リードの厚みが0.11mm以下である請求項1乃至8のいずれか記載の半導体装置。
- 前記ボンディングワイヤは、金、アルミニウム、銅のいずれかである請求項1乃至9のいずれかに記載の半導体装置。
- 半導体素子搭載領域と、前記半導体素子搭載領域の近傍に、一端が位置するように配設された複数のリードとを備えたリードフレームに、半導体チップを搭載する工程と、
前記リードの少なくとも一つを開始点とし、前記半導体チップのボンディングパッドに向けてボンディングワイヤを張架するワイヤボンディング工程と、
前記半導体チップを被覆すると共に、前記リードの外方の端部を外部に露呈せしめるように樹脂パッケージを形成する工程とを含む半導体装置の製造方法。 - 前記ワイヤボンディング工程は、ボンディングワイヤを担持したキャピラリを前記リード上の所定位置に降し、押しつけることによりリードに接合する工程と、
前記キャピラリを、前記ボンディングパッドの中心よりも内側に偏位した位置に降す工程とを含む請求項11に記載の半導体装置の製造方法。 - 前記ワイヤボンディング工程は、前記キャピラリを、前記ボンディングパッドの中心よりも内側に10μm以上偏位した位置に降す工程を含む請求項12に記載の半導体装置の製造方法。
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Citations (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5150661A (ja) * | 1974-10-30 | 1976-05-04 | Hitachi Ltd | |
JPS56145842U (ja) * | 1980-03-31 | 1981-11-04 | ||
JPS6055648A (ja) * | 1983-09-07 | 1985-03-30 | Toshiba Corp | 高密度実装基板 |
JPS62150869A (ja) * | 1985-12-25 | 1987-07-04 | Hitachi Ltd | 化合物半導体装置 |
JPH0294452A (ja) * | 1988-09-29 | 1990-04-05 | Nec Corp | 半導体装置 |
JPH0348230U (ja) * | 1989-09-16 | 1991-05-08 | ||
JPH04134842U (ja) * | 1991-06-05 | 1992-12-15 | サンケン電気株式会社 | 電子装置のリード接続構造 |
JPH05129473A (ja) * | 1991-11-06 | 1993-05-25 | Sony Corp | 樹脂封止表面実装型半導体装置 |
JPH06333976A (ja) * | 1993-05-25 | 1994-12-02 | Rohm Co Ltd | 半導体装置 |
JPH08340018A (ja) * | 1995-04-10 | 1996-12-24 | Fujitsu Ltd | ワイヤボンディング方法及び半導体装置及びワイヤボンディング用キャピラリー及びボールバンプの形成方法 |
JPH1056030A (ja) * | 1996-08-08 | 1998-02-24 | Seiko Epson Corp | 半導体装置及びその製造方法 |
JP2001185651A (ja) * | 1999-12-27 | 2001-07-06 | Matsushita Electronics Industry Corp | 半導体装置およびその製造方法 |
JP2001338955A (ja) * | 2000-05-29 | 2001-12-07 | Texas Instr Japan Ltd | 半導体装置及びその製造方法 |
JP2002151745A (ja) * | 2000-11-10 | 2002-05-24 | Sharp Corp | 半導体装置 |
JP2002231882A (ja) * | 2001-02-06 | 2002-08-16 | Mitsubishi Electric Corp | 半導体装置 |
JP2002329742A (ja) * | 2001-05-07 | 2002-11-15 | Mitsubishi Electric Corp | 半導体装置 |
JP2003133480A (ja) * | 2001-10-30 | 2003-05-09 | Sharp Corp | 半導体装置及び積層型半導体装置並びに半導体装置の製造方法及び積層型半導体装置の製造方法 |
JP2003158218A (ja) * | 2001-11-22 | 2003-05-30 | Sharp Corp | 半導体装置及びその製造方法 |
JP2005197360A (ja) * | 2004-01-05 | 2005-07-21 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
-
2003
- 2003-12-03 JP JP2003404571A patent/JP3941953B2/ja not_active Expired - Fee Related
Patent Citations (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5150661A (ja) * | 1974-10-30 | 1976-05-04 | Hitachi Ltd | |
JPS56145842U (ja) * | 1980-03-31 | 1981-11-04 | ||
JPS6055648A (ja) * | 1983-09-07 | 1985-03-30 | Toshiba Corp | 高密度実装基板 |
JPS62150869A (ja) * | 1985-12-25 | 1987-07-04 | Hitachi Ltd | 化合物半導体装置 |
JPH0294452A (ja) * | 1988-09-29 | 1990-04-05 | Nec Corp | 半導体装置 |
JPH0348230U (ja) * | 1989-09-16 | 1991-05-08 | ||
JPH04134842U (ja) * | 1991-06-05 | 1992-12-15 | サンケン電気株式会社 | 電子装置のリード接続構造 |
JPH05129473A (ja) * | 1991-11-06 | 1993-05-25 | Sony Corp | 樹脂封止表面実装型半導体装置 |
JPH06333976A (ja) * | 1993-05-25 | 1994-12-02 | Rohm Co Ltd | 半導体装置 |
JPH08340018A (ja) * | 1995-04-10 | 1996-12-24 | Fujitsu Ltd | ワイヤボンディング方法及び半導体装置及びワイヤボンディング用キャピラリー及びボールバンプの形成方法 |
JPH1056030A (ja) * | 1996-08-08 | 1998-02-24 | Seiko Epson Corp | 半導体装置及びその製造方法 |
JP2001185651A (ja) * | 1999-12-27 | 2001-07-06 | Matsushita Electronics Industry Corp | 半導体装置およびその製造方法 |
JP2001338955A (ja) * | 2000-05-29 | 2001-12-07 | Texas Instr Japan Ltd | 半導体装置及びその製造方法 |
JP2002151745A (ja) * | 2000-11-10 | 2002-05-24 | Sharp Corp | 半導体装置 |
JP2002231882A (ja) * | 2001-02-06 | 2002-08-16 | Mitsubishi Electric Corp | 半導体装置 |
JP2002329742A (ja) * | 2001-05-07 | 2002-11-15 | Mitsubishi Electric Corp | 半導体装置 |
JP2003133480A (ja) * | 2001-10-30 | 2003-05-09 | Sharp Corp | 半導体装置及び積層型半導体装置並びに半導体装置の製造方法及び積層型半導体装置の製造方法 |
JP2003158218A (ja) * | 2001-11-22 | 2003-05-30 | Sharp Corp | 半導体装置及びその製造方法 |
JP2005197360A (ja) * | 2004-01-05 | 2005-07-21 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
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