JPH03227539A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPH03227539A
JPH03227539A JP2022446A JP2244690A JPH03227539A JP H03227539 A JPH03227539 A JP H03227539A JP 2022446 A JP2022446 A JP 2022446A JP 2244690 A JP2244690 A JP 2244690A JP H03227539 A JPH03227539 A JP H03227539A
Authority
JP
Japan
Prior art keywords
pad
semiconductor chip
protective film
metal
surface protective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022446A
Other languages
English (en)
Inventor
Shinji Nakano
真治 中野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP2022446A priority Critical patent/JPH03227539A/ja
Publication of JPH03227539A publication Critical patent/JPH03227539A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
    • H01L2224/02165—Reinforcing structures
    • H01L2224/02166—Collar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05073—Single internal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 産業上の利用分野 本発明は外部リードとの接続に半導体チップ上の電極パ
ッド部を用いる構造の半導体装置に関する。
従来の技術 従来のＡＩでなる電極パッドを用いた半導体チップと外
部リードとの接続構造について第２図の断面図を用いて
説明する。第２図において、１は半導体チップ、２は表
面保護膜、３はＡｆパッド電極、４はワイヤーボールで
ある。同図において、ワイヤーボール４は、Ａｆパッド
電極４に直接ボンディングされた構造になっている。
発明が解決しようとする課題 上記のような構造の半導体装置では、表面保護膜２と、
ワイヤーボール４の間に、すきまが生じるため、Ａｌパ
ッド電極３の表面が一部むき出しになる。このため、樹
脂封止後においても、ワイヤーリードを通して浸入した
水分によってＡ１パッド電極３が腐食し、半導体装置の
耐湿信頼性を低下されるという問題があった。
本発明はかかる点に鑑みてなされたもので、半導体装置
の耐湿性寿命向上を目的としている。
課題を解決するための手段 本発明は、上記問題点を解決するため、半導体チップの
電極パッド部および同パッド部表面保護膜開口部を、表
面保護膜開口部以上の面積のバリアメタルで覆われた構
造にしたものである。
作用 本発明により、半導体チップの電極パッド部およびパッ
ド部表面保護膜開口部を表面保護膜開口部以上の面積の
バリアメタルで覆われた構造にすることによって、樹脂
封止型半導体装置の耐湿性寿命を従来構造のものより大
幅に向上することができる。
実施例 本発明の実施例を第１図の断面図を用いて説明する。こ
の図において、１は半導体チップ、２は表面保護膜、３
はＡＩ！パッド電極、４はワイヤーボール、５はバリア
メタルである。本実施例では、従来の半導体チップ製造
プロセスを実施した後、バリアメタルを蒸着し、Ａｌパ
ッド電極３の上部に、表面保護膜２の開口部以上の面積
のバリアメタルがパターニングされるようにエラチング
ラ行って、Ａｌｌ＜ッド電極３の上部にバリアメタル５
を形成した。その後ワイヤーボール４をボンディングし
、以降一連の組立工程を実施している。
このような構造にすることにより、Ａ１パッド部表面が
全てバリアメタルに覆われるため、Ａｌパッド部に水分
が浸入しても腐食が発生しにくくなり、耐湿性寿命を大
幅に改善することができる。
発明の効果 以上述べたように、本発明の半導体チップのパッド構造
によると、従来の構造のものと比較して耐湿性寿命を大
幅に向上させることができた。
【図面の簡単な説明】
第１図は本発明の実施例を示す半導体装置の要部断面図
、第２図は従来の半導体装置の要部を示す断面図である
。 １・・・・・・半導体チップ、２・・・・・・表面保護
膜、３・・・・・・Ａ　ｌハツト、４・・・・・・ワイ
ヤーボール、５・・・・・・バリアメタル。

Claims (1)

    【特許請求の範囲】
  1. 外部リードを接続するために設けられた半導体チップ上
    の電極パッド部および表面保護膜開口部が、表面保護膜
    開口部以上の面積のバリアメタルで覆われた構造を備え
    た半導体装置。
JP2022446A 1990-02-01 1990-02-01 半導体装置 Pending JPH03227539A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2022446A JPH03227539A (ja) 1990-02-01 1990-02-01 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2022446A JPH03227539A (ja) 1990-02-01 1990-02-01 半導体装置

Publications (1)

Publication Number Publication Date
JPH03227539A true JPH03227539A (ja) 1991-10-08

Family

ID=12082940

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022446A Pending JPH03227539A (ja) 1990-02-01 1990-02-01 半導体装置

Country Status (1)

Country Link
JP (1) JPH03227539A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11162980A (ja) * 1997-11-26 1999-06-18 Matsushita Electron Corp 半導体装置およびその製造方法
JP2005167198A (ja) * 2003-11-10 2005-06-23 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
US7453128B2 (en) 2003-11-10 2008-11-18 Panasonic Corporation Semiconductor device and method for fabricating the same

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11162980A (ja) * 1997-11-26 1999-06-18 Matsushita Electron Corp 半導体装置およびその製造方法
JP3544464B2 (ja) * 1997-11-26 2004-07-21 松下電器産業株式会社 半導体装置およびその製造方法
JP2005167198A (ja) * 2003-11-10 2005-06-23 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JP3962402B2 (ja) * 2003-11-10 2007-08-22 松下電器産業株式会社 半導体装置
US7453128B2 (en) 2003-11-10 2008-11-18 Panasonic Corporation Semiconductor device and method for fabricating the same
US7948039B2 (en) 2003-11-10 2011-05-24 Panasonic Corporation Semiconductor device and method for fabricating the same
US7994589B2 (en) 2003-11-10 2011-08-09 Panasonic Corporation Semiconductor device and method for fabricating the same
US8247876B2 (en) 2003-11-10 2012-08-21 Panasonic Corporation Semiconductor device
US8618618B2 (en) 2003-11-10 2013-12-31 Panasonic Corporation Semiconductor device
US8710595B2 (en) 2003-11-10 2014-04-29 Panasonic Corporation Semiconductor device
US9082779B2 (en) 2003-11-10 2015-07-14 Panasonic Corporation Semiconductor device
US9673154B2 (en) 2003-11-10 2017-06-06 Panasonic Corporation Semiconductor device

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