JPS63143825A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS63143825A
JPS63143825A JP61293106A JP29310686A JPS63143825A JP S63143825 A JPS63143825 A JP S63143825A JP 61293106 A JP61293106 A JP 61293106A JP 29310686 A JP29310686 A JP 29310686A JP S63143825 A JPS63143825 A JP S63143825A
Authority
JP
Japan
Prior art keywords
gold wire
pad
section
protection film
surface protection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61293106A
Other languages
English (en)
Inventor
Yukio Tomita
富田 行雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP61293106A priority Critical patent/JPS63143825A/ja
Publication of JPS63143825A publication Critical patent/JPS63143825A/ja
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
    • H01L2224/02165Reinforcing structures
    • H01L2224/02166Collar structures
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    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • H01L2224/056Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624Aluminium [Al] as principal constituent
    • HELECTRICITY
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4845Details of ball bonds
    • H01L2224/48451Shape
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • HELECTRICITY
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48599Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48617Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48624Aluminium (Al) as principal constituent
    • HELECTRICITY
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    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
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    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301Capillary
    • H01L2224/78302Shape
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    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体装置に関し、特にポンディングパッド部
の腐食防止を行った半導体装置に関する。
〔従来の技術〕
従来、この種のポンディングパッド部を有する半導体装
置においては、金ワイヤによるボンディング等が行われ
ている。かかる例を図面を参照して説明する。
第4図乃至第6図はそれぞれ従来のポンディングパッド
部に金ワイヤをボンディング接続したときの平面図、B
−B″線の断面図、ボンダーのキャピラリー先端の断面
図である。
第4図および第5図に示すように、リード電極11は表
面保護膜12により被覆され、ボンディング接続される
パッド15の領域だけが開口された状態となっている。
かかる状態で金ワイヤ16の先端に保持されたボール状
のヘッド部14がパッド15に圧着され、押しつぶされ
たヘッド部14の周囲に盛上ったはみ出し部13を形成
する。
第6図は従来におけるボンダーのキャピラリー先端の要
部断面図である。
第6図に示すように、金ワ、イヤ6を圧着する際に使用
されるボンダーのキャピラリー17の先端は金ワイヤの
通路18とボール押圧部19およびはみ出し部13の押
圧部20により構成されている。このキャピラリー17
により金ワイヤ16はヘッド部14とはみ出し部13と
でパッド15に圧着される。
しかる後、耐湿性試験等を行って半導体装置として仕上
げる。
〔発明が解決しようとする問題点〕
しかしながら、上述した従来の半導体装置においては、
ボンディング接続を行った半導体装置に対し耐湿性試験
を行ったときに不良個所を発生する恐れがある。
例えば、その不良モードとしてはポンディングパッド部
のアルミ電極の水分による腐食がある。
即ち、ポンディングパッド部以外は表面保護膜で覆われ
ているため、耐湿性試験においても覆われた個所は十分
な効果が得られている。しがしながら、表面保護膜で覆
われていない開口部において、ボンディングによっても
ワイヤー材により覆われないアルミ電極部分が生じ、そ
の露出した部分が耐湿性試験で水分により腐食してしま
う。
また、かかる腐食を解決するため、金ワイヤーの太さを
大きくし且つボール状ヘッド部を同形状に大きくしてパ
ッド部を覆った場合には、ワイヤーのはみ出しによる保
護膜の破壊や製造コストの上昇といった問題がある。 
 一 本発明の目的は、かかるペレット構造の変更を行うこと
なく、耐湿性強度を向上させる半導体装置を提供するこ
とにある。
〔問題点を解決するための手段〕
本発明の半導体装置は、半導体基板上にリードとともに
形成される電極用パッドと、前記電極用パッドの上のみ
に開口部を有するように前記基板上を被覆する表面保護
膜と、前記パッドに金ワイヤーボンディングされたヘッ
ド部と、このヘッド部の周囲に押圧して形成される金ワ
イヤ平坦部とを有し、前記ヘッド部と前記金ワイヤー平
坦部との双方で開口している前記パッドの全面を被覆し
て構成される。
〔実施例〕
次に、本発明の実施例について図面を参照して説明する
第1図は本発明の一実施例を説明するためのボンディン
グ部の平面図、第2図は第1図に示すボンディング部の
A−A’線断面図である。
第1図および第2図に示すように、リード電極1は表面
保護膜2により被覆され、ボンディング接続されるパッ
ド5の領域だけが開口された状態となっている。かかる
状態で金ワイヤ6の先端に保持されたボール状のヘッド
部4がパッド5に圧 ′着され、押しつぶされたヘッド
部4の周囲に平坦にして且つ表面保護膜2よりも盛上っ
た金ワイヤー平坦部3を形成する。これにより、パッド
5は言うまでもなく表面保護膜2の上までも金ワイヤー
平坦部3により全面覆われる。
第3図は本発明におけるボンダーのキャピラリー先端の
要部断面図である。
第3図に示すように、金ワイヤ6を圧着する際に使用さ
れるボンダーのキャピラリー7の先端は金ワイヤの通路
8とボール押圧部となるヘッド形成型部9および金ワイ
ヤー平坦部3の形成型部lOにより構成されている。こ
のキャピラリー7により金ワイヤ6はヘッド部4と金ワ
イヤー平坦部3とでパッド5に圧着される。
従って、ワイヤーボンディング後に、半導体装置の耐湿
性試験等を行ってもパッド5が全面覆われているため、
アルミ腐食を防止することができる。
以上、本実施例について説明したが、樹脂封止する半導
体装置においては特に有効である。
〔発明の効果〕
以上説明したように、本発明は金ワイヤーのはみ出し部
を利用し、表面保護膜まで広げてボンディング作業と同
時にパッドの全面を覆うことにより、ペレット構造を変
更することなく且つ水分で腐食しやすいアルミ電極を保
護して耐湿性強度を向上させた半導体装置を得られる効
果がある。
【図面の簡単な説明】
第1図は本発明の一実施例を説明するためのボンディン
グ部の平面図、第2図は第1図に示すボンディング部の
A−A’線断面図、第3図は本発明におけるボンダーの
キャピラリー先端の要部断面図、第4図は従来の一例を
説明するためのボンディング部の平面図、第5図は第4
図に示すボンディング部のB−B’線断面図、第6図は
従来におけるボンダーのキャピラリー先端の要部断面図
である。 1・・・リード電極、2・・・表面保護膜、3・・・金
ワイヤー平坦部、4・・・ヘッド部、5・・・パッド、
6・・・金ワイヤ−,7・・・キャピラリ、8・・・金
ワイヤ通路、9・・・ヘッド形成型部、10\、+lゝ $f図 諮2凶

Claims (1)

    【特許請求の範囲】
  1. 半導体基板上にリードとともに形成される電極用パッド
    と、前記電極用パッドの上のみに開口部を有するように
    前記基板上を被覆する表面保護膜と、前記パッドに金ワ
    イヤーボンディングされたヘッド部と、このヘッド部の
    周囲に押圧して形成される金ワイヤ平坦部とを有し、前
    記ヘッド部と前記金ワイヤー平坦部との双方で開口して
    いる前記パッドの全面を被覆してなることを特徴とする
    半導体装置。
JP61293106A 1986-12-08 1986-12-08 半導体装置 Pending JPS63143825A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61293106A JPS63143825A (ja) 1986-12-08 1986-12-08 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61293106A JPS63143825A (ja) 1986-12-08 1986-12-08 半導体装置

Publications (1)

Publication Number Publication Date
JPS63143825A true JPS63143825A (ja) 1988-06-16

Family

ID=17790504

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61293106A Pending JPS63143825A (ja) 1986-12-08 1986-12-08 半導体装置

Country Status (1)

Country Link
JP (1) JPS63143825A (ja)

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