JPH04368140A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPH04368140A JPH04368140A JP3144330A JP14433091A JPH04368140A JP H04368140 A JPH04368140 A JP H04368140A JP 3144330 A JP3144330 A JP 3144330A JP 14433091 A JP14433091 A JP 14433091A JP H04368140 A JPH04368140 A JP H04368140A
- Authority
- JP
- Japan
- Prior art keywords
- bonding wire
- lead frame
- bonding
- semiconductor chip
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- 239000011347 resin Substances 0.000 claims abstract description 6
- 229920005989 resin Polymers 0.000 claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 239000010409 thin film Substances 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 abstract description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 4
- 238000002161 passivation Methods 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
- H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
- H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
- H01L2224/02165—Reinforcing structures
- H01L2224/02166—Collar structures
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05556—Shape in side view
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- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05556—Shape in side view
- H01L2224/05558—Shape in side view conformal layer on a patterned surface
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- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4845—Details of ball bonds
- H01L2224/48451—Shape
- H01L2224/48453—Shape of the interface with the bonding area
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- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
め要約のデータは記録されません。
Description
【0001】
【産業上の利用分野】本発明は半導体装置に関する。
【0002】
【従来の技術】通常、半導体装置は、図2に示すように
、半導体素子(図示省略)と、Al等の金属をパターニ
ングして形成して半導体素子に接続した金属配線6を備
え、金属細線(ボンディングワイヤー)7を接着するた
めのボンディングパッド8を金属配線の一領域に備えて
いる半導体チップ3を、リードフレーム2に固着し、リ
ードフレームのリード2aとボンディングパッド8をボ
ンディングワイヤー7で接続し、ボンディングワイヤー
を含め、半導体チップ全体を樹脂1で封止した構造にな
っている。この従来の半導体装置のボンディングパッド
は、図2に示すように、素子間を分離する絶縁膜4の上
に、その絶縁膜に平行な平面型に形成されていた。
、半導体素子(図示省略)と、Al等の金属をパターニ
ングして形成して半導体素子に接続した金属配線6を備
え、金属細線(ボンディングワイヤー)7を接着するた
めのボンディングパッド8を金属配線の一領域に備えて
いる半導体チップ3を、リードフレーム2に固着し、リ
ードフレームのリード2aとボンディングパッド8をボ
ンディングワイヤー7で接続し、ボンディングワイヤー
を含め、半導体チップ全体を樹脂1で封止した構造にな
っている。この従来の半導体装置のボンディングパッド
は、図2に示すように、素子間を分離する絶縁膜4の上
に、その絶縁膜に平行な平面型に形成されていた。
【0003】
【発明が解決しようとする課題】上述した従来の半導体
装置のボンディングパッドは、絶縁膜に平行な平面型で
あるため、ボンディングの際球状になったボンディング
ワイヤーの先端が押しつぶされボンディングパッドとボ
ンディングワイヤーとの接触面積が小さくなりボンディ
ングワイヤーの引張り強度が弱くなるという欠点があっ
た。
装置のボンディングパッドは、絶縁膜に平行な平面型で
あるため、ボンディングの際球状になったボンディング
ワイヤーの先端が押しつぶされボンディングパッドとボ
ンディングワイヤーとの接触面積が小さくなりボンディ
ングワイヤーの引張り強度が弱くなるという欠点があっ
た。
【0004】
【課題を解決するための手段】本発明の半導体装置は、
リードフレームと、これにダイボンディングされた半導
体チップと半導体チップ上に設けた、中央部にすり鉢状
のくぼみを持つボンディングパッドと、このボンディン
グパッドとリードフレームを接続するボンディングワイ
ヤーと、アルミ配線と、パッシベーション膜と樹脂封止
材と備えている。
リードフレームと、これにダイボンディングされた半導
体チップと半導体チップ上に設けた、中央部にすり鉢状
のくぼみを持つボンディングパッドと、このボンディン
グパッドとリードフレームを接続するボンディングワイ
ヤーと、アルミ配線と、パッシベーション膜と樹脂封止
材と備えている。
【0005】
【実施例】次に、本発明について図面を参照して説明す
る。図1は、本発明の一実施例を示す要部断面図である
。本実施例によれば、半導体装置は、図1に示すように
、リードフレーム2と、これにダンボンディングされた
半導体チップ3と半導体チップ3上に設けた、中央部に
すり鉢状のくぼみを持つボンディングパッド8と、この
ボンディングパッド8とリードフレーム2とを接続する
ボンディングワイヤー7と、アルミ配線6と、パッシベ
ーション膜5と、絶縁膜4と、樹脂封止材1とを含む。
る。図1は、本発明の一実施例を示す要部断面図である
。本実施例によれば、半導体装置は、図1に示すように
、リードフレーム2と、これにダンボンディングされた
半導体チップ3と半導体チップ3上に設けた、中央部に
すり鉢状のくぼみを持つボンディングパッド8と、この
ボンディングパッド8とリードフレーム2とを接続する
ボンディングワイヤー7と、アルミ配線6と、パッシベ
ーション膜5と、絶縁膜4と、樹脂封止材1とを含む。
【0006】本実施例によれば、リードフレーム2のリ
ード2aと半導体チップ3とを接続するボンディングワ
イヤー7を接着するボンディングパッド8が、中央部に
すり鉢状のくぼみを有しているので、ボンディングの際
、すり鉢状のくぼみと球状のボンディングワイヤー先端
がしっかり合致し、ボンディングワイヤーの球がつぶさ
れることなく接続されるのでボンディングパッド8とボ
ンディングワイヤー7の接触面積が大きくなり、ボンデ
ィングワイヤーの引張り強度が強くなる。すなわち、半
導体装置の信頼性を著しく向上せしめることができる。
ード2aと半導体チップ3とを接続するボンディングワ
イヤー7を接着するボンディングパッド8が、中央部に
すり鉢状のくぼみを有しているので、ボンディングの際
、すり鉢状のくぼみと球状のボンディングワイヤー先端
がしっかり合致し、ボンディングワイヤーの球がつぶさ
れることなく接続されるのでボンディングパッド8とボ
ンディングワイヤー7の接触面積が大きくなり、ボンデ
ィングワイヤーの引張り強度が強くなる。すなわち、半
導体装置の信頼性を著しく向上せしめることができる。
【0007】
【発明の効果】以上説明したように本発明は、従来平面
型であったボンディングパッドの中央部に、すり鉢状の
くぼみを有する構造としたので、ボンディングパッドと
ボンディングワイヤーとの接触面積が大きくなり、ボン
ディングワイヤーの引張り強度を強くすることができ、
半導体装置の信頼性向上に大きな効果をあげることがで
きる。
型であったボンディングパッドの中央部に、すり鉢状の
くぼみを有する構造としたので、ボンディングパッドと
ボンディングワイヤーとの接触面積が大きくなり、ボン
ディングワイヤーの引張り強度を強くすることができ、
半導体装置の信頼性向上に大きな効果をあげることがで
きる。
【図1】本発明の一実施例を示す要部断面図である。
【図2】従来の半導体装置の要部断面図である。
1 樹脂封止材
2 リードフレーム
3 半導体チップ
4 絶縁膜
5 パッシベーション膜
6 アルミ配線
7 ボンディングワイヤー
8 ボンディングパット
Claims (1)
- 【請求項1】 半導体素子と、金属薄膜で成る金属配
線とを有する半導体チップをリードフレームに搭載し、
樹脂で封止した半導体装置において、細い金属線(以降
ボンディングワイヤーと記す)を接着する金属配線部位
(以降ボンディングパッドと記す)にすり鉢状のくぼみ
を設けたことを特徴とした半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3144330A JPH04368140A (ja) | 1991-06-17 | 1991-06-17 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3144330A JPH04368140A (ja) | 1991-06-17 | 1991-06-17 | 半導体装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04368140A true JPH04368140A (ja) | 1992-12-21 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3144330A Pending JPH04368140A (ja) | 1991-06-17 | 1991-06-17 | 半導体装置 |
Country Status (1)
Country | Link |
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JP (1) | JPH04368140A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102019119521A1 (de) * | 2019-07-18 | 2021-01-21 | Infineon Technologies Ag | Chipgehäuse und verfahren zur herstellung eines chipgehäuses |
-
1991
- 1991-06-17 JP JP3144330A patent/JPH04368140A/ja active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102019119521A1 (de) * | 2019-07-18 | 2021-01-21 | Infineon Technologies Ag | Chipgehäuse und verfahren zur herstellung eines chipgehäuses |
US11430669B2 (en) | 2019-07-18 | 2022-08-30 | Infineon Technologies Ag | Forming a lock structure in a semiconductor chip pad |
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