JP5194932B2 - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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- JP5194932B2 JP5194932B2 JP2008080733A JP2008080733A JP5194932B2 JP 5194932 B2 JP5194932 B2 JP 5194932B2 JP 2008080733 A JP2008080733 A JP 2008080733A JP 2008080733 A JP2008080733 A JP 2008080733A JP 5194932 B2 JP5194932 B2 JP 5194932B2
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 526
- 238000004519 manufacturing process Methods 0.000 title claims description 46
- 239000000853 adhesive Substances 0.000 claims abstract description 38
- 229920005989 resin Polymers 0.000 claims description 266
- 239000011347 resin Substances 0.000 claims description 266
- 238000000034 method Methods 0.000 claims description 62
- 230000001070 adhesive effect Effects 0.000 claims description 37
- 239000000463 material Substances 0.000 description 132
- 239000000758 substrate Substances 0.000 description 82
- 239000000126 substance Substances 0.000 description 66
- 125000006850 spacer group Chemical group 0.000 description 62
- 239000010410 layer Substances 0.000 description 56
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 44
- 238000004090 dissolution Methods 0.000 description 42
- 229910000679 solder Inorganic materials 0.000 description 39
- 239000010949 copper Substances 0.000 description 34
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 32
- 239000010931 gold Substances 0.000 description 28
- 238000007789 sealing Methods 0.000 description 25
- 230000015572 biosynthetic process Effects 0.000 description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 17
- 229910052802 copper Inorganic materials 0.000 description 17
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 16
- 239000011368 organic material Substances 0.000 description 16
- 230000001154 acute effect Effects 0.000 description 15
- 229910052759 nickel Inorganic materials 0.000 description 15
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 14
- 229910052737 gold Inorganic materials 0.000 description 14
- 238000010438 heat treatment Methods 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 238000012986 modification Methods 0.000 description 13
- 230000004048 modification Effects 0.000 description 13
- 230000002093 peripheral effect Effects 0.000 description 13
- 229910045601 alloy Inorganic materials 0.000 description 12
- 239000000956 alloy Substances 0.000 description 12
- 239000010936 titanium Substances 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 11
- 230000006378 damage Effects 0.000 description 11
- 239000003822 epoxy resin Substances 0.000 description 11
- 229920000647 polyepoxide Polymers 0.000 description 11
- 230000008569 process Effects 0.000 description 10
- 238000011084 recovery Methods 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 230000036961 partial effect Effects 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 239000004925 Acrylic resin Substances 0.000 description 7
- 229920000178 Acrylic resin Polymers 0.000 description 7
- 239000002253 acid Substances 0.000 description 7
- 230000006835 compression Effects 0.000 description 7
- 238000007906 compression Methods 0.000 description 7
- 238000009713 electroplating Methods 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 7
- 238000007747 plating Methods 0.000 description 7
- 230000002829 reductive effect Effects 0.000 description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 238000003754 machining Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 230000003014 reinforcing effect Effects 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 5
- 229920001187 thermosetting polymer Polymers 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 230000004308 accommodation Effects 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 239000010953 base metal Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000004070 electrodeposition Methods 0.000 description 3
- 238000005323 electroforming Methods 0.000 description 3
- 238000007772 electroless plating Methods 0.000 description 3
- 239000008187 granular material Substances 0.000 description 3
- 230000001788 irregular Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000012993 chemical processing Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000000016 photochemical curing Methods 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910018134 Al-Mg Inorganic materials 0.000 description 1
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018467 Al—Mg Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004283 SiO 4 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- ZAUUZASCMSWKGX-UHFFFAOYSA-N manganese nickel Chemical compound [Mn].[Ni] ZAUUZASCMSWKGX-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/57—Protection from inspection, reverse engineering or tampering
- H01L23/573—Protection from inspection, reverse engineering or tampering using passive means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0275—Security details, e.g. tampering prevention or detection
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3431—Leadless components
- H05K3/3436—Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/0502—Disposition
- H01L2224/05026—Disposition the internal layer being disposed in a recess of the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05124—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05147—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05155—Nickel [Ni] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05571—Disposition the external layer being disposed in a recess of the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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Description
本発明の実施の形態の別の観点によれば、第1の電子回路形成部を有する第1の半導体素子と、前記第1の電子回路形成部に対向して配置された第2の電子回路形成部を有する第2の半導体素子と、前記第1の半導体素子と前記第2の半導体素子との間に、圧縮状態で配設され、前記第1の電子回路形成部に対向して形成された第1の突起部と前記第2の電子回路形成部に対向して形成された第2の突起部とを有する弾性体と、前記第1の半導体素子と前記第2の半導体素子とを固着する接着剤と、を備えることを特徴とする半導体装置が提供される。
本発明の第1の実施の形態に係る半導体装置100を、図1に示す。
成される。また、ボンディング端子16の表面には、下層より、例えばニッケル/金(N
i/Au)の2層めっき、銅/ニッケル/金(Cu/Ni/Au)の3層めっき、或いは
半田被覆を施しておいてもよい。当該半田被覆は、半田析出法、半田粉付着法、印刷法、又は電解めっき法等により形成される。
当該電子回路は、トランジスタ等の能動素子、容量素子或いは抵抗素子等の受動素子、ならびにこれらの機能素子を相互に接続する銅(Cu)、アルミニウム(Al)或いはこれらの金属の合金からなる配線層をもって形成されている。
当該凸状外部接続端子14は、無電解めっき法、電気めっき法等によって形成されたニッケル(Ni)から構成されていてもよい。凸状外部接続端子14の頂部には、必要に応じて平坦化処理が施される。
前述の如く、当該配線基板11としては、無機材料を機材とする絶縁基板或いは有機材料を機材とする絶縁基板が用いられる。そして、当該配線基板11の表面及び/又は内部には、例えば銅(Cu)等からなる配線層が選択的に配設され、配線基板11の一方の主面であって、半導体素子12が搭載される面上には、前記配線層に接続された導電層が選択的に配設されている。また、当該導電層に於ける、半導体素子12の外部接続端子14が接続される部位、及びその周囲を除いて、ソルダーレジスト層15が選択的に被覆されている。
この時、前記バネ部材25は、スペーサ樹脂26を介して半導体素子12により圧縮される。
当該アンダーフィル材27は、毛細管現象により、半導体素子12と配線基板11との間隙部に充填され、更に当該半導体素子12の外周部に配設される。
この結果、配線基板11の一方の主面上にフリップチップ(フェイスダウン)方式をもって搭載・固着された半導体素子12と当該配線基板11の一方の主面との間に、アンダーフィル材27が充填され、両者の接続が補強される。
本発明の第2の実施の形態に係る半導体装置200を、図13に示す。
尚、当該半導体装置200に於いて、前記半導体装置100に於ける部位に対応する部位には同じ符号を付し、その説明を省略する。
かかる構成にあっても、バネ固定用樹脂個片28−6の樹脂量は、前記図14に示す構造に比して少ない。勿論、当該孔32を複数個配設することも可能である。
当該下金型121に於いて前記キャビティ部127に対応する領域から離間した領域と、当該領域に対応する下金型固定部120には、バネ固定用樹脂個片28−1を構成する樹脂129が投入されるポット部128が連通して配設されている。
このとき、下金型121上に設けられたバネ部材25は、上金型126からの圧力により圧縮される。更に、この時点で、加熱機構により加熱されている下金型121内に設けられたプランジャ125上に載置されている固形状の樹脂129は溶融する。
プランジャ125によりカル部131に圧入された溶融樹脂は、ランナ部133及びゲート部132を介して前記キャビティ部127内に流入し、キャビティ部127の内部に置かれている複数個のバネ部材25を一体に被覆して、樹脂封止する。
この時、カル部131、ランナ133、及びゲート部132に充填されている樹脂129Bも同時に取り出される。樹脂成形品129A及び129Bは固化されている。尚、ランナ部133は、上金型126の下面に向かって先細るテーパー状の断面形状を有しているため、樹脂129Aが樹脂129Bに接触している部分は容易に破断・分離される。
この様な樹脂成形法によれば、バネ部材25を樹脂封止するバネ固定用樹脂個片28−1を、容易且つ効率的に製造することができる。
この段階で、上金型126ならびに下金型121は、上金型固定部125及び下金型固定部120に設けられた加熱機構(図示せず)により加熱されている。
このとき、バネ押し用突起部材140の先端は下金型121上に配置されたバネ部材25に接触し、当該バネ押し用突起部材140はバネ部材25の突起部25aの近傍を下金型121方向に押圧する。この時点で、プランジャ125の上面上に載置されている固形状の樹脂129は溶融する。
プランジャ130によりカル部131に圧入された溶融樹脂は、ランナ部133及びゲート部132を介して前記キャビティ部127内に流入し、キャビティ部127の内部に置かれている複数のバネ部材25を一体に被覆して、樹脂封止する。
この時、カル部131、ランナ133、及びゲート部132に充填されている樹脂129Bも同時に取り出される。樹脂成形品129A及び129Bは固化されている。尚、ランナ部133は、上金型126の下面に向かって先細るテーパー状の断面形状を有しているため、樹脂129Aが樹脂129Bに接触している部分は容易に破断される。
当該電子回路は、トランジスタ等の能動素子、容量素子或いは抵抗素子等の受動素子、ならびにこれらの機能素子を相互に接続する銅(Cu)、アルミニウム(Al)等からなる配線層をもって形成されている。
次いで、配線基板11上に、前記半導体素子12を位置合わせする。(図26(c)参照)
即ち、外部接続用端子パッド19上に凸状外部接続端子14が形成された半導体素子12の背面(他方の主面)を、予め約180℃乃至260℃に加熱したボンディングツール90に、吸着孔91を介して吸着保持する。そして、当該半導体素子12の凸状外部接続端子14と、配線基板11のボンディング端子16とを対向せしめ、位置合わせする。
即ち、半導体素子12の凸状外部接続端子14に荷重を印加する。この時、前記アンダーフィル材27を半導体素子12の下面全域に流動せしめ、当該半導体素子12と配線基板11との間隙部、並びに半導体素子12の側面外周部に配置し、かかる状態に於いて熱硬化せしめる。
なお、前記図27(d)に示す工程に於いて、アンダーフィル材27が完全に硬化する場合には、本工程を省略してもよい。
本発明の第3の実施の形態に係る半導体装置300を、図28に示す。尚、当該半導体装置300に於いて、前述の二つの実施の形態に於ける部位に対応する部位には同じ符号を付し、その説明を省略する。また、図28に於いて点線Aにより囲まれた部分を拡大し、図29に示す。図29に於いては、封止樹脂311の図示を省略している。
本発明の第4の実施の形態に係る半導体装置400を、図31に示す。なお、当該半導体装置400に於いて、前記実施の形態に於ける部位に対応する部位には同じ符号を付し、その説明を省略する。また、図31に於いて点線Aにより囲まれた部分を拡大して図32に示す。図32に於いては、封止樹脂311の図示を省略している。
この様な構造を有する半導体装置400から、半導体素子12及び半導体素子301を取り出すべく、アンダーフィル材27等を薬液により溶解除去すると、バネ固定用樹脂個片28−8は、その薬液溶解速度がアンダーフィル材27の薬液溶解速度と同等以上の樹脂材から形成されているため、アンダーフィル材27が全て溶解すると同時或いはこれよりも前に溶解除去される。この結果、半導体素子12と半導体素子301との間隙において、圧縮されていたバネ部材75は弾性回復する。
本発明の第5の実施の形態に係る半導体装置500を、図34に示す。なお、当該半導体装置500に於いて、前記実施の形態に於ける部位に対応する部位には同じ符号を付し、その説明を省略する。また、図34に於いて点線Aにより囲まれた部分を拡大して図35に示す。図35に於いては、封止樹脂311の図示を省略している。
本発明の第6の実施の形態に係る半導体装置600を、図37に示す。なお、当該半導体装置600に於いて、前術の実施の形態に於ける部位に対応する部位には同じ符号を付し、その説明を省略する。また、図37に於いて点線Aにより囲まれた部分を拡大して図38に示す。図38に於いては、封止樹脂311の図示を省略している。
本発明の第7の実施の形態に係る半導体装置700を、図40に示す。尚、当該半導体装置700に於いて、前術の実施の形態に於ける部位に対応する部位には同じ符号を付し、その説明を省略する。また、図40に於いて点線Aにより囲まれた部分を拡大して図41に示す。尚、図41に於いては、封止樹脂311の図示は省略している。
本発明の第8の実施の形態に係る半導体装置800を、図43に示す。当該半導体装置800に於いても、前術の実施の形態に於ける部位に対応する部位には同じ符号を付し、その説明を省略する。尚、図43に於いて点線Aにより囲まれた部分を拡大して図44に示す。
この様な構造を有する半導体装置800から、半導体素子301を取り出すべく、接着剤302及びバネ固定用樹脂個片28−11等を薬液により溶解除去すると、バネ固定用樹脂個片28−11も溶解する。この結果、図45に示すように、圧縮されていたバネ部材60は弾性回復し、一端が放熱板部650に支持された状態のバネ部材60の突起部60aにより、半導体素子301の電子回路形成部304は破壊される。
(付記1)
半導体素子と、
前記半導体素子の電子回路形成部に対向して配置された板状部材と、
前記半導体素子と前記板状部材との間に、圧縮状態で配設された弾性体と、を備え、
前記弾性体は、前記弾性体の伸長方向の一端に、前記半導体素子の前記電子回路形成部に対向して形成された少なくとも1つの突起部を有し、
前記半導体素子と前記板状部材とは接着剤により固着されていることを特徴とする半導体装置。
(付記2)
付記1記載の半導体装置であって、
前記弾性体は、前記半導体素子と前記板状部材とが少なくとも一部の箇所で接続された状態で、弾性回復して前記弾性体の前記突起部が前記半導体素子の前記電子回路形成部に接触することを特徴とする半導体装置。
(付記3)
付記1又は2記載の半導体装置であって、
前記半導体素子と前記板状部材との間に配置される可溶性部材を備えることを特徴とする半導体装置。
(付記4)
付記3記載の半導体装置であって、
前記可溶性部材は、前記弾性体と前記半導体素子との間に配置される第1の樹脂部であることを特徴とする半導体装置。
(付記5)
付記1乃至4いずれか一項記載の半導体装置であって、
前記板状部材に形成された電極端子と、前記半導体素子の前記電子回路形成部に形成された外部接続端子とは、バンプを介して接合されていることを特徴とする半導体装置。
(付記6)
付記4記載の半導体装置であって、
前記第1の樹脂部の厚さは、前記弾性体が前記圧縮状態から解放されて伸長する長さよりも小さいことを特徴とする半導体装置。
(付記7)
付記3記載の半導体装置であって、
前記可溶性部材は、前記弾性体のうち、少なくとも前記突起部を封止する第2の樹脂部であることを特徴とする半導体装置。
(付記8)
付記7記載の半導体装置であって、
前記第2の樹脂部は、前記半導体素子の中心部分を除いた箇所に配設されることを特徴とする半導体装置。
(付記9)
付記8記載の半導体装置であって、
前記外部接続端子と前記電極端子とは、再溶融性を有する導電部材又は圧着により接合されていることを特徴とする半導体装置。
(付記10)
付記7記載の半導体装置であって、
前記第2の樹脂部の上面には、前記弾性体に到達する凹部が形成され、
前記弾性体の前記突起部は、前記第2の樹脂部の上面よりも下側に位置していることを特徴とする半導体装置。
(付記11)
付記10記載の半導体装置であって、
前記凹部は、前記第2の樹脂部の上面において前記第2の樹脂部の幅方向に延びており、前記第2の樹脂部の側面に連通していることを特徴とする半導体装置。
(付記12)
付記1乃至11いずれか一項記載の半導体装置であって、
前記板状部材の、前記半導体素子と対向する面には、電子回路形成部が形成され、
前記弾性体は、前記伸長方向の他端に、前記板状部材の電子回路形成部に対向して形成された少なくとも1つの突起部を有していることを特徴とする半導体装置。
(付記13)
付記12記載の半導体装置であって、
前記弾性体は複数設けられ、
少なくとも1つの弾性体の突起部は、前記板状部材の電子回路形成部と対向していることを特徴とする半導体装置。
(付記14)
付記13記載の半導体装置であって、
前記弾性体と前記板状部材との間に、前記第2の樹脂部が設けられていることを特徴とする半導体装置。
(付記15)
付記4記載の半導体装置であって、
前記接着剤及び前記第1の樹脂部は、硝酸、硫酸、及びこれらの混酸から構成される群から選択される物質からなる薬液により溶解し、
前記薬液による前記第1の樹脂部の溶解速度は、前記薬液による前記接着剤の溶解速度以上の速度であることを特徴とする半導体装置。
(付記16)
付記7又は8記載の半導体装置であって、
前記接着剤及び前記第2の樹脂部は、硝酸、硫酸、及びこれらの混酸から構成される群から選択される物質からなる薬液により溶解し、
前記薬液による前記第2の樹脂部の溶解速度は、前記薬液による前記接着剤の溶解速度以上の速度であることを特徴とする半導体装置。
(付記17)
板状部材と半導体素子の電子回路形成部との隙間に、圧縮状態の弾性体を、前記弾性体の伸長方向の端部に形成された突起部が前記電子回路形成部に対向する姿勢で配置する工程と、
前記板状部材と前記半導体素子と接着剤により固着する工程と、
を具備することを特徴とする半導体装置の製造方法。
(付記18)
板状部材と半導体素子の電子回路形成部との間に、可溶性部材に保持された圧縮状態の弾性体を、前記弾性体に形成された突起部が前記可溶性部材に対向する姿勢で配置する工程と、
前記板状部材と前記半導体素子とを接着剤により固定する工程と、
を具備することを特徴とする半導体装置の製造方法。
(付記19)
付記18記載の半導体装置の製造方法であって、
前記板状部材と前記半導体素子の電子回路形成部との隙間に前記弾性体を配置する工程の前に、前記電子回路形成部に可溶性部材を形成する工程とを具備し、
前記弾性体は、前記板状部材と前記半導体素子とに加重をかけることにより圧縮状態とすることを特徴とする半導体装置の製造方法。
(付記20)
付記22記載の半導体装置の製造方法であって、
前記半導体素子の外部接続端子と前記板状部材の端子とを、再溶融性を有する導電部材によって被覆することによって、前記半導体素子の前記外部接続端子と前記板状部材の前記端子とを接合することを特徴とする半導体装置の製造方法。
12、301 半導体素子
13、304、525 電子回路形成部
14、320 外部接続端子
16 ボンディング端子
19、305 外部接続用電極パッド
20 導電部材
25、30、35、40、45、50、55、60 バネ部材
25a、30a、35a、40a、45a、50a、55a、55b、65a、65b 突起部
26 スペーサ樹脂
27 アンダーフィル材
28 バネ部材固定用樹脂個片
31、32 凹部
100、200、300、400、500、600、700、800 半導体装置
306 半田バンプ
650 放熱板部
Claims (10)
- 半導体素子と、
前記半導体素子の電子回路形成部に対向して配置された板状部材と、
前記半導体素子と前記板状部材との間に、圧縮状態で配設された弾性体と、を備え、
前記弾性体は、前記半導体素子の前記電子回路形成部に対向して形成された少なくとも1つの突起部を有し、
前記半導体素子と前記板状部材とは接着剤により固着されていることを特徴とする半導体装置。 - 請求項1記載の半導体装置であって、
前記弾性体は、前記半導体素子と前記板状部材とが少なくとも一部の箇所で接続された状態で、弾性回復して前記弾性体の前記突起部が前記半導体素子の前記電子回路形成部に接触することを特徴とする半導体装置。 - 請求項1又は2記載の半導体装置であって、
前記半導体素子と前記板状部材との間に配置される可溶性部材を備えることを特徴とする半導体装置。 - 請求項3記載の半導体装置であって、
前記可溶性部材は、前記弾性体と前記半導体素子との間に配置される第1の樹脂部であることを特徴とする半導体装置。 - 請求項1乃至4いずれか一項記載の半導体装置であって、
前記板状部材に形成された電極端子と、前記半導体素子の前記電子回路形成部に形成された外部接続端子とは、バンプを介して接合されていることを特徴とする半導体装置。 - 請求項3記載の半導体装置であって、
前記可溶性部材は、前記弾性体のうち、少なくとも前記突起部を封止する第2の樹脂部であることを特徴とする半導体装置。 - 請求項6記載の半導体装置であって、
前記第2の樹脂部の上面には、前記弾性体に到達する凹部が形成され、
前記弾性体の前記突起部は、前記第2の樹脂部の上面よりも下側に位置していることを特徴とする半導体装置。 - 第1の電子回路形成部を有する第1の半導体素子と、
前記第1の電子回路形成部に対向して配置された第2の電子回路形成部を有する第2の半導体素子と、
前記第1の半導体素子と前記第2の半導体素子との間に、圧縮状態で配設され、前記第1の電子回路形成部に対向して形成された第1の突起部と前記第2の電子回路形成部に対向して形成された第2の突起部とを有する弾性体と、
前記第1の半導体素子と前記第2の半導体素子とを固着する接着剤と、を備えることを特徴とする半導体装置。 - 板状部材と半導体素子の電子回路形成部との隙間に、圧縮状態の弾性体を、前記弾性体に形成された突起部が前記電子回路形成部に対向する姿勢で配置する工程と、
前記板状部材と前記半導体素子と接着剤により固着する工程と、
を具備することを特徴とする半導体装置の製造方法。 - 板状部材と半導体素子の電子回路形成部との間に、可溶性部材に保持された圧縮状態の弾性体を、前記弾性体に形成された突起部が前記可溶性部材に対向する姿勢で配置する工程と、
前記板状部材と前記半導体素子とを接着剤により固定する工程と、
を具備することを特徴とする半導体装置の製造方法。
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US7458816B1 (en) * | 2000-04-12 | 2008-12-02 | Formfactor, Inc. | Shaped spring |
JP2004062572A (ja) * | 2002-07-30 | 2004-02-26 | Sharp Corp | 半導体集積回路装置およびその製造方法ならびにicカード |
JP4070568B2 (ja) * | 2002-10-07 | 2008-04-02 | シャープ株式会社 | 半導体チップ及びその製造方法 |
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2008
- 2008-03-26 JP JP2008080733A patent/JP5194932B2/ja not_active Expired - Fee Related
- 2008-11-21 US US12/275,848 patent/US8076769B2/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10426037B2 (en) | 2015-07-15 | 2019-09-24 | International Business Machines Corporation | Circuitized structure with 3-dimensional configuration |
US10524362B2 (en) | 2015-07-15 | 2019-12-31 | International Business Machines Corporation | Circuitized structure with 3-dimensional configuration |
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US20090243092A1 (en) | 2009-10-01 |
US8076769B2 (en) | 2011-12-13 |
JP2009237728A (ja) | 2009-10-15 |
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