KR960706207A - 상호접속용 접촉구조, 삽입기, 반도체 어셈블리 및 이들을 제조하기 위한 방법(contact structure for interconnections, interposer, semiconductor assembly and method) - Google Patents
상호접속용 접촉구조, 삽입기, 반도체 어셈블리 및 이들을 제조하기 위한 방법(contact structure for interconnections, interposer, semiconductor assembly and method)Info
- Publication number
- KR960706207A KR960706207A KR1019960702580A KR19960702580A KR960706207A KR 960706207 A KR960706207 A KR 960706207A KR 1019960702580 A KR1019960702580 A KR 1019960702580A KR 19960702580 A KR19960702580 A KR 19960702580A KR 960706207 A KR960706207 A KR 960706207A
- Authority
- KR
- South Korea
- Prior art keywords
- contact
- substrate
- contact structure
- semiconductor device
- terminal
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims 59
- 238000000034 method Methods 0.000 title claims 32
- 239000004020 conductor Substances 0.000 claims abstract 28
- 239000000463 material Substances 0.000 claims abstract 9
- 239000000758 substrate Substances 0.000 claims 58
- 230000008878 coupling Effects 0.000 claims 8
- 238000010168 coupling process Methods 0.000 claims 8
- 238000005859 coupling reaction Methods 0.000 claims 8
- 229910000679 solder Inorganic materials 0.000 claims 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 6
- 229910045601 alloy Inorganic materials 0.000 claims 6
- 239000000956 alloy Substances 0.000 claims 6
- 239000003990 capacitor Substances 0.000 claims 5
- 238000000151 deposition Methods 0.000 claims 5
- 238000007689 inspection Methods 0.000 claims 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 4
- 239000011810 insulating material Substances 0.000 claims 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 3
- 229910052804 chromium Inorganic materials 0.000 claims 3
- 239000011651 chromium Substances 0.000 claims 3
- 229910017052 cobalt Inorganic materials 0.000 claims 3
- 239000010941 cobalt Substances 0.000 claims 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 3
- 229910052802 copper Inorganic materials 0.000 claims 3
- 239000010949 copper Substances 0.000 claims 3
- 229910052759 nickel Inorganic materials 0.000 claims 3
- 229910052709 silver Inorganic materials 0.000 claims 3
- 239000004332 silver Substances 0.000 claims 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 3
- 229910052721 tungsten Inorganic materials 0.000 claims 3
- 239000010937 tungsten Substances 0.000 claims 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 2
- 229910052796 boron Inorganic materials 0.000 claims 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 2
- 229910052737 gold Inorganic materials 0.000 claims 2
- 239000010931 gold Substances 0.000 claims 2
- 229910052738 indium Inorganic materials 0.000 claims 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 2
- 229910052742 iron Inorganic materials 0.000 claims 2
- 229910052750 molybdenum Inorganic materials 0.000 claims 2
- 239000011733 molybdenum Substances 0.000 claims 2
- 229910052698 phosphorus Inorganic materials 0.000 claims 2
- 239000011574 phosphorus Substances 0.000 claims 2
- 229910052703 rhodium Inorganic materials 0.000 claims 2
- 239000010948 rhodium Substances 0.000 claims 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims 2
- 239000000523 sample Substances 0.000 claims 2
- 238000007789 sealing Methods 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 238000004873 anchoring Methods 0.000 claims 1
- 229910052787 antimony Inorganic materials 0.000 claims 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 1
- 229910052797 bismuth Inorganic materials 0.000 claims 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 1
- 229910052793 cadmium Inorganic materials 0.000 claims 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 230000002401 inhibitory effect Effects 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 238000001465 metallisation Methods 0.000 claims 1
- 239000005445 natural material Substances 0.000 claims 1
- 230000003472 neutralizing effect Effects 0.000 claims 1
- -1 pallanium Substances 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 230000001568 sexual effect Effects 0.000 claims 1
- 238000007493 shaping process Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 238000005476 soldering Methods 0.000 claims 1
- 230000001629 suppression Effects 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 210000003205 muscle Anatomy 0.000 description 1
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/02—Arrangements of circuit components or wiring on supporting structure
- H05K7/10—Plug-in assemblages of components, e.g. IC sockets
- H05K7/1053—Plug-in assemblages of components, e.g. IC sockets having interior leads
- H05K7/1061—Plug-in assemblages of components, e.g. IC sockets having interior leads co-operating by abutting
- H05K7/1069—Plug-in assemblages of components, e.g. IC sockets having interior leads co-operating by abutting with spring contact pieces
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/04—Housings; Supporting members; Arrangements of terminals
- G01R1/0408—Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
- G01R1/0433—Sockets for IC's or transistors
- G01R1/0441—Details
- G01R1/0466—Details concerning contact pieces or mechanical details, e.g. hinges or cams; Shielding
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/04—Housings; Supporting members; Arrangements of terminals
- G01R1/0408—Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
- G01R1/0433—Sockets for IC's or transistors
- G01R1/0483—Sockets for un-leaded IC's having matrix type contact fields, e.g. BGA or PGA devices; Sockets for unpackaged, naked chips
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
- G01R1/06716—Elastic
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- G—PHYSICS
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- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
- G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
- G01R1/07314—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card the body of the probe being perpendicular to test object, e.g. bed of nails or probe with bump contacts on a rigid support
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
- G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
- G01R1/07342—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card the body of the probe being at an angle other than perpendicular to test object, e.g. probe card
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- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
- G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
- G01R1/07357—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card with flexible bodies, e.g. buckling beams
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2884—Testing of integrated circuits [IC] using dedicated test connectors, test elements or test circuits on the IC under test
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67138—Apparatus for wiring semiconductor or solid state device
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0652—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next and on each other, i.e. mixed assemblies
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/306—Lead-in-hole components, e.g. affixing or retention before soldering, spacing means
- H05K3/308—Adaptations of leads
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/325—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by abutting or pinching, i.e. without alloying process; mechanical auxiliary parts therefor
- H05K3/326—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by abutting or pinching, i.e. without alloying process; mechanical auxiliary parts therefor the printed circuit having integral resilient or deformable parts, e.g. tabs or parts of flexible circuits
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3421—Leaded components
- H05K3/3426—Leaded components characterised by the leads
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Abstract
상호접속 접촉구조 에셈블리는 표면과 이 표면에 액세스 가능하며 상기 전자소자에 의해 지지된 도전접촉구조를 가진다. 접촉구조는 제1 및 제2단부를 가진 내부 가요성 연장부재를 포함하며, 상기 제1단부는 개별 본딩재료를 사용하지 않고 상기 도전접촉단자의 표면에 제1인티메이트 본드를 형성한다. 전기도전 셸은 상기 연장부재를 밀봉하고 상기 제1인티매이트에 인접한 상기 도전접촉단자의 적어도 일부분을 가진 제2인티매이트 본드를 형성하는 적어도 하나의 도전재료층으로 형성된다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 개별핀의 형태인 본 발명을 통합한 뼈대 및 근육 접촉구조의 부분적인 사시도, 제2도는 제1도와 유사하나 구부러진 탄성 접촉구조를 도시한 부분적인 사시도, 제3도는 다중 휨 및 다중 층 셀을 가진 접촉구조를 도시한 단면의 측입면도.
Claims (86)
- 표면을 가진 전자소자와, 상기 전자소자에 의해 지지되며 상기 표면을 통해 액세스 가능한 도전성 접촉단자와, 제1 및 제2단부를 가진 가요성 연장부재를 포함하는데, 상기 제1단자는 개별 본딩 재료를 사용하지 않고 상기 도전성 접촉 단자의 표면에 제1 인티메이트 본드를 형성하며, 상기 연장부재를 밀봉하는 적어도 하나의 도전재료층으로 형성되어 상기 제1인티매이트 본드에 인접한 상기 도전 접촉 단자의 적어도 일부분을 가진 제2이티매이트 본드를 형성하는 것을 특징으로 하는 상호 접속 접촉 구조 어셈블리.
- 제1항에 있어서, 인장, 시어(shear) 및/또는 휨에 의해 측정된 제1 및 제2인티매이트 본드의 강도는 제1 인티매이트 본드보다 더 강한 것을 특징으로 하는 상호 접속 접촉구조 어셈블리.
- 제2항에 있어서, 상기 제2인티매이트 본드의 강도는 제1 인티매이트 본드의 강도의 2배 이상인것을 특징으로 하는 상호 접속 접촉구조 어셈블리.
- 제1항에 있어서, 상기 적어도 하나의 층이 압착되는 것을 특징으로 하는 상호 접속 접촉 구조 어셈블리.
- 제1항에 있어서, 상기 내부 가요성 연장 부재 및 상기 셀의 셀의 적어도 하나의 층은 상호 접속 접촉구조에 탄성특성을 분배하는 캔틸레버를 제공하기 위해 형성되는 것을 특징으로 하는 상호 접속 접촉 구조 어셈블리.
- 제1항에 있어서, 상기 셀은 외부층을 가지며, 상기 외부층은 땝납 합금인 것을 특징으로 하는 상호 접속 접촉구조 어셈블리.
- 반도체 장치를 통합하며 표면을 가진 적어도 하나의 도전 접촉패드를 가진 표면을 가지는 전자소자를 포함하는 어셈블리와 상호 접속하여 사용 하는 접촉구조에 있어서, 제1 및 제2단부를 가진 적어도 하나의 도전 가요성 연장소자와, 제1인티매이트 본드를 형성하기위해 접촉패드의 표면에 상기 제1단부를 결합하는 수단과, 상기 가요성 연장소자를 밀봉하는 셀과, 제2인티메이트 본드의 강도가 상기 제2인티메이트 본드의 강도보다 강한 상기 제2인티메이트 본드를 제공하기위해 상기 가요성 연장소자의 제1단부를 상기 접촉패드에 결합하는 상기 수단에 인접한 적어도 접촉패드 표면의 일부분을 포함 하는 것을 특징으로 하는 접촉구조.
- 제7항에 있어서, 상기 셀은 도전 재료로 이루어진 적어도 하나의 층으로 형성되는 것을 특징으로 하는 접촉 구조.
- 제8항에 있어서, 상기 가요성 연장소자는 휨을 형성하는 적어도 하나의 캔틸레버가 제공되는 것을 특징으로 하는 접촉 구조.
- 제9항에 있어서, 상기 도전셀은 고항복력을 가지는 것을 특징으로 하는 접촉 구조.
- 제10항에 있어서, 상기 셀의 상기 도전 재료층은 니켈, 코발트, 철, 인, 붕소, 구리, 텅스텐, 몰리브덴, 로듐, 크롬, 류테늄, 은, 팔라늄 및 이들의 합금의 군으로 선택된 재료로 형성되는 것을 특징으로 하는 접촉 구조.
- 제8항에 있어서, 상기 셀은 내부 압축력을 제공하는 층을 포함하는 것을 특징으로 하는 접촉 구조.
- 제7항에 있어서, 상기 제2단부는 자유단부인 것을 특징으로 하는 접촉 구조.
- 제13항에 있어서, 상기 자유단부는 볼형 구조를 가지는 것을 특징으로 하는 접촉 구조.
- 제7항에 있어서, 도전재료로 이루어진 셀에 부착된 외부 도전층을 더 포함하고, 상기 외부도전층은 양호한 전기 접속을 형성하는 재료로 이루어지는 것을 특징으로 하는 접촉구조.
- 제7항에 있어서, 상기 셀은 외부표면을 가지며, 상기 외부표면은 미세 돌출을 가지는 것을 특징으로 하는 접촉구조.
- 제9항에 있어서, 휨의 변형을 허용하면서 휨의 도전특성을 최소화 하기위해 접촉패드의 표면으로부터 휨부분 이상으로 뻗는 도전 가요성 재료 매스를 더 포함하는 것을 특징으로 하는 접촉 구조.
- 제13항에 있어서, 상기 자유단부는 상기 전자소자의 표면위로 뻗는 것을 특징으로 하는 접촉구조.
- 제13항에 있어서, 상기 자유단부는 상기 전자소자의 표면 하부에서 아래로 뻗는 것을 특징으로 하는 접촉구조.
- 제7항에 있어서, 차폐 접촉구조를 제공하기 위해서, 셀위에 배치된 절연재료로 이루어진 층과 절연재료층위에 배치된 도전재료로 이루어진 추가층을 더 포함하는 것을 특징으로 하는 접촉 구조.
- 제10항에 있어서, 상기 제2단부는 상기 접촉단자와 탄력있게 맞물리기 위해서 탄성 프로브 접촉으로 사용 할 수 있도록 개방되는 것을 특징으로 하는 접촉구조.
- 제21항에 있어서, 상기 접촉구조는 전기접촉층으로 이용하는 종속부분을 포함하는 것을 특징으로 하는 접촉구조.
- 제13항에 있어서, 상기 자유단부는 자유단부에 의해 지지되고 일정한 간격을둔 다수의 돌출부를 가진 적어도 하나의 층을 가진 접촉패드가 제공되는 것을 특징으로 하는 접촉구조.
- 제23항에 있어서, 돌출부를 가진 상기 층은 경질 도전 재료로 형성되는 것을 특징으로 하는 접촉구조.
- 제24항에 있어서, 상기 경질 도전재료는 니켈, 코발트, 로듐, 철, 크롬, 텅스텐, 몰리브덴, 탄소 및 이들의 합금의 군으로 선택되는 것을 특징으로 하는 접촉 구조.
- 제10항에 있어서, 상기 프로브 단부는 상부 자유단부에 인접한 캔틸레버 부분일 제공되는 것을 특징으로 하는 접촉 구조.
- 제7항에 있어서, 상기 수단은 제1단부가 결합되는 동일한 도전 접촉패드에 상기 제2단부를 결합하고, 땝납층은 상기접촉구조를 밀봉하고 땝납 범프를 형성하기 위해 제공되는 것을 특징으로 하는 접촉 구조.
- 제27항에 있어서, 상기 셸은 땝납 재료로 형성되는 외부층을 가지는 것을 특징으로 하는 접촉 구조.
- 제7항에 있어서, 상기 가요성 연장소자는 상기접촉패드위로 뻗으며, 이접촉패드 사이의 평면 표면영역을 둘러싸는 루프로 형성되며, 상기 셸은 가요성 연장소자의 셸에 고정되고 밀폐된 평면영역을 덮는 땝납 범프를 형성하는 것을 특징으로 하는 접촉구조.
- 반도체 어셈블리와, 일정한 간격을 둔 제1 및 제2표면 및 상기 표면둥 적어도 하나에 일정한 간격을 둔 다수의 접촉패드를 가진 졀연재료로 형성된 기판과, 상기표면중 적어도 한 표면상의 접촉패드에 장착된 다수의 접촉구조에 사용하며, 상기 각각의 접촉구조는 제1단부 및 상기기판위로 뻗으며 개방된 제2단부를 가진 적어도 하나의 가요성 연장소자와, 상기 제1단부를 접촉패드에 결합하고 가요성 연장소자상에 형성되고 상기 접촉패드에 결합된 도전 재료로 이루어진 셸을 가진 수단을 포함하는 것을 특징으로 하는 삽입기.
- 제30항에 있어서, 상기기판은 상기 접촉패드에 고정된 추가 가요성 연장소자와 함께 기판을 통해 뻗는 홀과 상기 추가 가요성 연장소자상에서 도전재료로 형성된 셸이 제공되는 것을 특징으로 하는 삽입기.
- 제31항에 있어서, 상기 가요성 연장소자는 캔틸레버 부분을 가진 휨부분이 형성되며, 상기 셀은 평방인치당 적어도 3만 파운드의 고항복력을 가진 재료로 형성되는 것을 특징으로 하는 삽입기.
- 제31항에 있어서, 상기 홀은 제1 및 제2표면을 통해 뻗으며 쇼울더 상에 배치된 접촉패드와 함께 상기 제1 및 제2표면에 대해 리세스 되는 상기 쇼울더를 제공하고 성호 오프셋되는 부분을 가지며, 상기 접촉구조는 상기 쇼울더상에 배치된 접촉패드에 고정되고 일정한 간격을 둔 평행평면에 위치한 자유단부를 제공하기 위해 상기 제1및 제2표면 이상 상기 홀을 통해 외부로 뻗는 자유담부를 가지는 것을 특징으로 하는 삽입기.
- 제31항에 있어서, 상기 홀은 이홀을 통해 뻗는 컨덕터를 가지는 것을 특징으로 하는 삽입기.
- 제31항에 있어서, 상기 홀은 도금된 스로우 홀의 형태를 가지며, 상기 접촉구조는 상기 도금돈 스로우홀을 가로질러 뻗으며 상기 기판의 다른 측면상의 접촉패드에 결합되는 추가 접촉구조와 함께 상기 제1 및 제2표면 중 한 표면상의 접촉패드에 배치되며, 상기 추가 접촉구조는 가요성 연장소자를 포함하며 상기 가요성 연장소자상에 형성된 셸을 포함하는 것을 특징으로 하는 삽입기.
- 제35항에 있어서, 상기 추가 접촉구조는 땝납 범프를 제공하기 위해 상기 추가 접촉구조상에 형성된 땝납과 함께 루프형 단면인 것을 특징으로 하는 삽입기.
- 접촉패드가 제공된 표면을 가진 능동 반도체 장치와 상기 접촉 패드상에 장착된 다수의 접촉구조를 포함하며, 상기 각각의 접촉구조는 제1 및 제2단부를 가진 가요성 연장소자와 개방된 제2단부를 가진 접촉패드에 상기 제1단부를 결합하는 수단과, 상기 가요성 연장소자상에 형성되고 상기 가요성 연장소자는 및 상기 접촉패드의 적어도 일부분위로 뻗는 도전재료로 형성된 셀을 포함하고, 상기 가요성 연장소자는 휨을 형성하는 캔틸레버 부분을 가지며, 상기 접촉패드는 소정 간격으로 떨어져 위치하며, 상기 접촉구조의 제2자유단부는 상기 접촉구조에 결합된 가요성 연장소자의 제1단부 사이의 공간보다 더 넓은 간격으로 떨어져 있는 것을 특징으로 하는 반도체 장치 어셈블리.
- 제37항에 있어서, 상기 제2 자유단자는 상기 가요성 연장소자의 상기 제1단부에 대해 엇갈려 배치되는 것을 특징으로 하는 반도체 장치 어셈블리.
- 제37항에 있어서, 상기 반도체 잔치의 표면상에 장착돤 통합핀을 더 포함하며, 상기 통합핀은 가요성 연장소자 및 상기 가요성 연장소자상에 형성된 셸로 형성되는 것을 특징으로 하는 반도체 장치 어셈블리.
- 제39항에 있어서, 상기 가요성 연장소자 및 상기 통합핀의 상기 셸은 접촉구조와 동일한 재료로 형성되는 것을 특징으로 하는 반도체 장치 어셈블리.
- 제1및 제2표면과 상기 제1 및 제2표면 중 적어도 한 표면상에 배치된 접촉패드를 가진 절연 재료층으로 형성된 기판과, 제1표면 및 접촉패드를 가지고 본드를 형성하기 위해 기판중 한표면에 의해 지지된 패드 또는 반도체 장치의 패드중 하나에 결합된 제1단부와 상기 반도체 장치의 접촉패드 또는 본드없는 기판중 한표면에 의해 지지된 접촉패드와 접촉하는 제2단부를 가진 탄성 접촉구조를 통합하는 적어도 하나의 능동 반도체 장치를 포함하고, 상기 상호 접속 접촉구조는 휨을 형성하는 캔틸레버 부분을 가진 가요성 연장소자와 가요성 연장 소자상에 배치된 인치당 적어도 3만파운두의 고항복력을 가지고 상기 기판에 상기 능동 실리콘 장치를 탄력있게 고정하기위해 상기 상호 접속 접촉구조에 스프링 특성을 제공하는 도전 재료로 이루어진 셸로 구성되는 것을 특징으로 하는 반도체 장치 어셈블리.
- 제41항에 있어서, 적어도 하나의 추가능동 반도체 장치는 접촉패드 및 상기 기판의 다른 표면에서 상기 접촉패드에 적어도 하나의 추가 능동 방도체 장치의 접촉 패드를 접속하는 수단을 가지는 것을 특징으로 하는 반도체 장치 어셈블리.
- 제42항에 있어서, 상기기판의 다른 표면상의 접촉패드에 적어도 하나의 추가 반도체 장치의 접촉패드를 접속하는 상기 수단은 제1상호 접속 접촉구조와 동일한 구조의 상호접속 접촉구조를 포함하는 것을 특징으로 하는 반도체 장치 어셈블리.
- 제41항에 있어서 도전재료로 형성된 상기 셸은 접촉패드에 상기 접속구조를 추가 인장 힘을 제공하기 위해 상기접촉 패드에 친밀하게 결합되는 것을 특징으로 하는 반도체 장치 어셈블리.
- 제41항에 있어서, 상기 기판은 인쇄회로 기판이며, 상기 인쇄회로기판은 다수이 금속화층과 이들 통해 뻗는 수직 바이어 컨덕터가 제공되고, 상기 접촉패드는 상기 수직 바이어 컨덕터와 접촉하는 것을 특징으로 하는 반도체 패키지 어셈블리.
- 제41항에 있어서, 상기 기판에 고정되고, 적어도 하나의 능동 반도체 장치를 소정위치에 유지하기 위해 상기반도체 장치위로 뻗으며, 상기 상호 접속 탄성 접촉구조상에 압축력을 제공하는 스프링 클립수단을 더 포함하는 것을 특징으로 하는 반도체 장치 어셈블리.
- 제46항에 있어서, 상기 스프링 클립 수단은 상기 상호 접속 탄성 접촉구조와 동일한 재료로 형성되는 것을 특징으로 하는 반도체 패키지 어셈블리.
- 제45항에 있어서, 상기 상호 접속 접촉구조는 제2유단부를 가지며, 상기 제2자유단부는 상기 수직 바이어 컨덕터를 통해 상기 인쇄회로기판으로 뻗으며 상기 기판에 대해 상기 반도체 장치를 소정위치에 위치시키면서 전기접촉을 형성하기 휘해 상기 수직 바이어 컨덕터와 맞물리는 것을 특징으로 하는 반도체 패키지 어셈블리.
- 제41항에 있어서, 상기 기판은 다수의 홀과, 상기 기판에 대해 상기 반도체 장치를 소정위치에 위치시키고 상기 반도체 장치상의 접촉패드에 상기 기판상의 접촉 패드를 접속하는 탄성 접촉구조상에 압축력을 제공하기 위해 반도체 장치에 고정되고 상기 홀을 통해 뻗으며 상기 인쇄회로기판과 맞물이는 스프링 클립수단이 제공되는 것을 특징으로 하는 반도체 패키지 어셈블리.
- 제41항에 있어서, 상기 기판은 다수의 정렬홀과, 상기 기판에 대해 상기 반도체 장치를 정렬시키기 위해 상기 반도체 장치상에 장착되고 상기 기판의 상기 홀을 통해 뻗는 정렬핀과, 상기 정렬핀에 의해 결정된 정렬로 반도체 장치를 상기 기판에 대한 소정위치에 위치시키기 위해 상기 반도체 장치및 상기 기판사이에 배치된 점착수단이 제공되는 것을 특징으로 하는 반도체 패키지 어셈블리.
- 제50항에 있어서, 상기 정렬핀은 상기 가요성 연장소자를 위한 추가 구조적인 지지를 제공하기 위해 형성된 셸을 가진 연장소자로 형성되는 것을 특징으로 하는 반도체 패키지 어셈블리.
- 제41항에 있어서, 상기 제1반도체 장치및 상기 기판사이에 배치된 커패시터를 더 포함하고, 상기 커패시터는 접촉단자와 상기 접촉단자를 상기 제1 반도체 장치의 접촉패드에 결합하는 수단을 포함하는 것을 특징으로 하는 반도체 패키지 어셈블리.
- 제52항에 있어서, 상기 기판은 리세스가 형성되며, 상기 커패시터는 그 자체내에 배치되는 것을 특징으로 하는 반도체 패키지 어셈블리.
- 제52항에 있어서, 상기 접촉단자를 상기 제1능동 반도체 장치의 접촉패드에 접속하는 상기 수단은 상기 리세스에 인접하여 배치된 접촉패드를 호함하는 것을 특징으로 하는 반도체 패키지 어셈블리.
- 제41항에 있어서, 상기 기판은 다른 레벨에서 스텝을 가진 제2표면이 제공되며, 상기 접촉패드는 상기 스템상의 패드에 고정되고 동일한 수평면으로 뻗는 자유단자를 가지는 것을 특징으로 하는 반도체 패키지 어셈블리.
- 제41항에 있어서, 상기 기판은 제1표면을 통해 뻗는 리세스와, 상기 리세스내에 배치된 커패시터와 커패스터에 의해 지지되고 상기 반도체 장치의 접촉패드와 동일한 평면에서 종료되며 상기 반도체 장치에 고정되어 상기 반도체 장치에 전기 접촉을 제공하는 추가 접촉구조가 제공되는 것을 특징으로 하는 반도체 패키지 어셈블리.
- 제41항에 있어서, 통합기판은 상기 통합기판의 접촉패드에 상기 기판의 접촉패드를 상호 접속하는 추가 탄성 접촉구조와 함께 다수의 접촉패드를 가지는 것을특징으로 하는 반도체 패키지 어셈블리.
- 제57항에 있어서, 통합 기판과 이 통합기판에 추가 기판을 접속하는 접촉구조상에 장착되는 다수의 추가 기판을 더 포함하는 것을 특징으로 하는 반도체 패키지 어셈블리.
- 제58항에 있어서, 상기 기판을 상기 통합기판에 상호접속하는 상기 접촉구조는 제1 및 제2측면과 제1및 제2측면상의 적어도 몇몇의 접촉패드사이에 전기 접속하는 접촉패드를 가진 삽입기와, 상기 삽입기의 접촉패드 및 상기 통합기판의 접촉패드사이를 접속하는 땝납수단을 포함하며, 상기 삽입기의 접촉헤드및 상기 기판상의 접촉패드를 접촉시키는 것을 특징으로 하는 반도체 패키지 어셈블리.
- 제59항에 있어서, 압축력이 접촉구조에 가해져서 상기 접촉구조가 상기 접촉패드와 전기 접촉을 하도록, 상기 삽입기의 접촉패드와, 상기 기판 또는 통합기판과 상기 통합기판에 상기 기판을 접속하는 억제수단과 맞물리는 것을 특징으로 하는 반도체 패키지 어셈블리.
- 제60항에 있어서, 상기 억제수단은 착탈 가능한 수단의 형태인것을 특징으로 하는 반도체 패키지 어셈블리.
- 제1및 제2표면과 제1 및 제2표면상에 도전 접촉패드를 가진 절연재료로 형성된 기판과, 상기 기판의 제1 및 제2표면상의 상기 접촉패드와 맞선 접촉패드를 가진 다수의 반도체 장치와, 상기 반도체 장치가 상기 접촉구조를 통해 상기 반도체 장치에 전기 접속하는 상기 기판에 의해 지지된 상기기판 및 접촉수단의 대향측면상의 제1 및 제2평행평면에 위치하도록 반도체 장치의 접촉패드 및 상기 기판에 의해 지지된 접촉패드를 전기 접속하고 상기 기판의 표면으로부터 일정한 간격을 둔 위치에 상기 반도체 장치를 지지하는 탄성 접촉구조를 포함하는 것을 특징으로 하는 반도체 패키지 어셈블리.
- 제62항에 있어서, 상기 접촉수단은 한 평면에 열로 배치되는 것을 특징으로 하는 반도체 패키지 어셈블리.
- 제1 및 제2단부를 가진 가요성 연장 도전 소자를 사용함으로서 전자소자에 의해 지지된 접촉패드와 맞물리는 구조적인 접촉을 제공하는 단계와, 제1본드를 형성하기 위해 상기 제1단부를 상기 접촉패드에 고정시키는 단계와, 상기 접촉패드 및 상기 구조적인 접촉부사이에 추가 힘이 제공되도록 구조적인 접촉을 제공하는 가요성 연장소자와 제1본드 및 접촉패드위로 뻗는 셸을 형성하는 단계를 포함하는 것을 특징으로하는 방법.
- 제64항에 있어서, 상기 제1 및 제2단부사이의 가요성 연장소자에 휨을 형성하는 단계와, 접촉구조에 대한 스프링과 같은 특성을 제공하기 위해 상기 휨위에 상기 셸을 형성하는 단계를 더 포함하는 것을 특징으로하는 것을 특징으로 하는 방법.
- 제65항에 있어서, 상기 부재들 사이에 전기 접속을 하기위해 상기 추가 전자소자상의 상기 접촉구조에 상기 가요성 연장소자의 제2단부를 부착하는 단계아, 접촉패드를 가진 추가 전자 소자를 제공하는 단계를 더 포함하는 것을 특징으로하는 방법.
- 제66항에 있어서, 압축힘이 상기 접촉구조상에 유지되도록 상기 전자소자 및 상기 추가 전자소자사이에 압축힘을 가하는 단계를 더 포함하는 것을 특징으로하는 방법.
- 제64항에 있어서, 제2본드를 형성하기 위해 동일 접촉패드에 상기 제2단부를 고정하는 단계를 더 포함하는 것을 특징으로하는 방법.
- 전자소자의 도전 단자에 돌출 도전 접촉부를 장착하기 위한 방법에 있어서, 상기 단자에 상기 공급단자를 결합하는 연속적인 공급단자를 가진 와이어를 제공하는 단계와, 상기 단자로부터 돌출하고 제1시템 단부를 가진 스템을 결합된 공급단부로부터 형성하는 단계와, 상기 소자로 부터 일정한 간격을 둔 관계로 장착된 투매부재에 제2스템을 결합하는 단계와, 뼈대를 한정하기 위해 제2스템에 상기 스템을 고정하는 단계와, 상기 뼈대및 상기소자의 적어도 인접표면을 밀봉하기 위해 도전 재료를 중착하는 단계와, 투매 부재를 제거하는 단계를 포함하는 것을 특징으로하는 방법.
- 제69항에 있어서, 제거단계중, 상기 스템 단부는 투매 부재로부터 제거 하는 것을 특징으로 하는 방법.
- 제69항에 있어서, 상기 도전 재료층은 그것의 표면상에 다수의 미세 돌출이 제공되는 것을 특징으로하는 방법.
- 제69항에 있어서, 상기 중착단계는 서로 다른 다수의 층을 배치시키는 단계를 포함하는 것을 특징으로하는 방법.
- 제73항에 있어서, 도전 재료를 포함하는 적어도 하나의 상기 층은 매칭단자에 삽입될때 돌출 도전 접촉부의 접촉저항을 감소시키기 위해 재그 형태를 가지는 것을 특징으로 하는 방법.
- 전자소자상의 도전단자에 돌출 도전접촉부를 장착하기 위한 방법에 있어서, 상기 단자에 연속적인 공급 단자를 가진 와이어를 제공하는 단계와, 상기 단자에 상기 공급 단자를 결합하는 단계와, 상기 단자로부터 돌출하고 제1스템 단부를 가진 스템을 공급 단부로 부터 형성하는 단계와, 뼈대를 한정 하기위해 제2스템 단부에 상기 스템을 고정하는 단계와, 상기 뼈대 및 상기 상기 단자의 인접표면을 밀봉하기 위해 도전 재료를 중착하는 단계와, 다수의 단자와 적어도 하나의 전자 소자상에서 동일하 단계를 실행하는 단계를 포함하며, 상기 단자는 다른 평면에 있으며, 상기 형성 단계는 다수의 자유 스탠딩 돌출 스템에서 실행되며 상기 고정 단계는 공통 평면의 각각의 스템상에서 실행되는 것을 특징으로하는 방법.
- 제74항에 있어서, 상기 단자는 다른 평면에 위치하며, 상기 형성단계는 다른 평면상에서 실행되는 것을 특징으로하는 방법.
- 소정 패턴으로 정렬된 접촉패드를 가진 개별 검사 또는 번-인 기판을 사용함으로써 장착된 다수의 탄성접촉구조를 가진 반도체 장치상에서 검사 및/ 또는 번-인 과정을 실행하는 방법에 있어서, 상기 반도체 장치와 연관된 탕성 접촉구조를 상기 검사 또는 번-인 기판의 상기 접촉 패드와 전기 접속하기위해 압축력하에서 상기 검사 또는 번-인 기판에 대해 다수의 탄성 접촉구조를 가진 상기 반도체 장치의 위치를 조절하는 단계와, 상기 탄성 접촉구조가 검사 또는 번-인 기판의 접촉 패드와 맞물리는 동안 상기 반도체 장치를 검사하는 단계와, 검사 또는 번-인을 완료한 후 검사 또는 번-인 기판의 접촉패드와 맞물리는 상기 다수의 탄성 접촉구조를 가진 상기 반도체 장치를 제거하는 단계를 포함하는 것을 특징으로하는 방법.
- 제76항에 있어서, 소정 패턴으로 배열된 다수의 접촉패드를 가진 통합기판을사용하기 위해 검사 또는 번-인 과정을 완료한 다음 상기 통합기판상의 상기접촉패드와 맞물리는 상기 반도체 장치의 탄성 접촉구조를 위치시키고, 상기 접촉구조 및 상기 통합기판의 상기접축패드사이의 영구 접속을 형성하는 추가 단계를 더 실행 하는 것을 특징으로하는 방법.
- 제76항에 있어서, 상기 접촉 구조는 베이스 및 자유단부를 가지며, 상기 베이스 단자의 공간과 다르고 상기 기판상의 상기 접촉패드의 공간에 일치하도록 상기 자유단부사이의 공간을 변화시키는 단계를 더 포함하는 것을 특징으로하는 방법.
- 전자 소자상의 도전단자에 돌출 도전 접축구도를 정착하기 위한 방법에 있어서, 연속적인 공급단자를 가진 와이어를 제공하는 단계와, 상기 공급단자를 상기 단자에 결합하는 단계와, 상기 단자로부터 돌출하며 제1스템단자를 가지는 스템을 상기 공급단자로부터 형성하는 단계와, 뼈대를 한정하기위해 제2스템단자에 상기 스템을 고정하는 단계와, 뼈대 및 상기 단자의 인접표면을 밀봉하기 위해 도전 재료를 증착하는 단계를 포함하는 것을 특징으로 하는 방법.
- 제79항에 있어서, 상기 형성 단계와 상기 고정 단계는 와이어 본딩 장치에 의해 실행되고, 상기 고정 단계후 및 상기 중착단계전에 상기 장치의 외부에 있는 도구에 의해 상기 뼈대를 성형하는 단계를 더 포함하는 것을 특징으로 하는 방법.
- 제79항에 있어서, 상기 도전 재료층은 그 표면상에 다수의 미세 돌출부가 제공되는 것을 특징으로하는 방법.
- 제79항에 있어서, 상기 중착단계는 서로 각각 다른 다수의 층의 위치를 조절하는 단계를 더 포함하는 것을 특징으로 하는 방법.
- 제79항에 있어서, 상기 중착 단계는 서로 각각 다른 다수의 층의 위치를 조절하는 단계를 더 포함하는 것을 특징으로 하는 방법.
- 제79항에 있어서, 상기 형성단계는 다수의 자유 스탠딩 돌출 스템을 만들며, 상기 고정 단계는 공통평면의 상기 각각의 스템상에 실행되는 것을 특징으로 하는 방법.
- 제79항에 있어서, 상기 단자는 다른 평면에 위치하며, 상기 형성 단계는 다수의 자유스탠딩 돌출 스템을 만들며, 상기 고정단계는 공통펑면의 상기 각각의 모든 스템상에서 실행되는 것을 특징으로 하는 방법.
- 제79항에 있어서, 상기 와이어는 금, 구리, 알루미늄, 은, 인듐,및 이들의 합금으로 이루어진 군으로부터 선택된 금속으로 형성되며, 상기 뼈대는 니켈, 코발트, 붕소, 인, 구리, 텅스텐, 티타늄, 크롬, 및 이들의 합금으로 이루어진 군으로부터 선택된 제1 도전재료층으로 코팅되며, 상기 도전 재료의 상부층은 인듐, 비스무트, 안티몬, 금, 은 ,카드뮴 및 이들의 합금으로 이루어진 군으로부터 선택된 땜납인것을 특징으로 하는 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
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US8/340,144 | 1993-11-15 | ||
US8/152,812 | 1993-11-16 | ||
US08/152,812 | 1993-11-16 | ||
US08/152,812 US5476211A (en) | 1993-11-16 | 1993-11-16 | Method of manufacturing electrical contacts, using a sacrificial member |
US08/340,144 US5917707A (en) | 1993-11-16 | 1994-11-15 | Flexible contact structure with an electrically conductive shell |
US08/340,144 | 1994-11-15 | ||
PCT/US1994/013373 WO1995014314A1 (en) | 1993-11-16 | 1994-11-16 | Contact structure for interconnections, interposer, semiconductor assembly and method |
Publications (2)
Publication Number | Publication Date |
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KR960706207A true KR960706207A (ko) | 1996-11-08 |
KR100210691B1 KR100210691B1 (ko) | 1999-07-15 |
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KR1019960702580A KR100210691B1 (ko) | 1993-11-15 | 1994-11-16 | 상호접속용 접촉구조, 삽입기, 반도체 어셈블리 및 이들을 제조하기 위한 방법 |
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US (9) | US5917707A (ko) |
EP (2) | EP1241481A3 (ko) |
JP (4) | JP3006885B2 (ko) |
KR (1) | KR100210691B1 (ko) |
CN (1) | CN1045693C (ko) |
DE (1) | DE69431565T2 (ko) |
WO (1) | WO1995014314A1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160110717A (ko) | 2015-03-11 | 2016-09-22 | 주식회사 듀링플러스 | 탄성 시그널 핀 |
Families Citing this family (531)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5829128A (en) * | 1993-11-16 | 1998-11-03 | Formfactor, Inc. | Method of mounting resilient contact structures to semiconductor devices |
US5476211A (en) * | 1993-11-16 | 1995-12-19 | Form Factor, Inc. | Method of manufacturing electrical contacts, using a sacrificial member |
US6043563A (en) * | 1997-05-06 | 2000-03-28 | Formfactor, Inc. | Electronic components with terminals and spring contact elements extending from areas which are remote from the terminals |
US20050062492A1 (en) * | 2001-08-03 | 2005-03-24 | Beaman Brian Samuel | High density integrated circuit apparatus, test probe and methods of use thereof |
US6295729B1 (en) * | 1992-10-19 | 2001-10-02 | International Business Machines Corporation | Angled flying lead wire bonding process |
US5810607A (en) * | 1995-09-13 | 1998-09-22 | International Business Machines Corporation | Interconnector with contact pads having enhanced durability |
US7368924B2 (en) | 1993-04-30 | 2008-05-06 | International Business Machines Corporation | Probe structure having a plurality of discrete insulated probe tips projecting from a support surface, apparatus for use thereof and methods of fabrication thereof |
US6722032B2 (en) * | 1995-11-27 | 2004-04-20 | International Business Machines Corporation | Method of forming a structure for electronic devices contact locations |
US6064213A (en) * | 1993-11-16 | 2000-05-16 | Formfactor, Inc. | Wafer-level burn-in and test |
US20070228110A1 (en) * | 1993-11-16 | 2007-10-04 | Formfactor, Inc. | Method Of Wirebonding That Utilizes A Gas Flow Within A Capillary From Which A Wire Is Played Out |
US6836962B2 (en) | 1993-11-16 | 2005-01-04 | Formfactor, Inc. | Method and apparatus for shaping spring elements |
US7200930B2 (en) * | 1994-11-15 | 2007-04-10 | Formfactor, Inc. | Probe for semiconductor devices |
US6246247B1 (en) | 1994-11-15 | 2001-06-12 | Formfactor, Inc. | Probe card assembly and kit, and methods of using same |
US7579269B2 (en) * | 1993-11-16 | 2009-08-25 | Formfactor, Inc. | Microelectronic spring contact elements |
US6727580B1 (en) | 1993-11-16 | 2004-04-27 | Formfactor, Inc. | Microelectronic spring contact elements |
US20020053734A1 (en) * | 1993-11-16 | 2002-05-09 | Formfactor, Inc. | Probe card assembly and kit, and methods of making same |
US7073254B2 (en) | 1993-11-16 | 2006-07-11 | Formfactor, Inc. | Method for mounting a plurality of spring contact elements |
US7064566B2 (en) * | 1993-11-16 | 2006-06-20 | Formfactor, Inc. | Probe card assembly and kit |
US6482013B2 (en) * | 1993-11-16 | 2002-11-19 | Formfactor, Inc. | Microelectronic spring contact element and electronic component having a plurality of spring contact elements |
US6624648B2 (en) | 1993-11-16 | 2003-09-23 | Formfactor, Inc. | Probe card assembly |
US6442831B1 (en) * | 1993-11-16 | 2002-09-03 | Formfactor, Inc. | Method for shaping spring elements |
US5772451A (en) * | 1993-11-16 | 1998-06-30 | Form Factor, Inc. | Sockets for electronic components and methods of connecting to electronic components |
US6741085B1 (en) * | 1993-11-16 | 2004-05-25 | Formfactor, Inc. | Contact carriers (tiles) for populating larger substrates with spring contacts |
US6525555B1 (en) | 1993-11-16 | 2003-02-25 | Formfactor, Inc. | Wafer-level burn-in and test |
US6184053B1 (en) * | 1993-11-16 | 2001-02-06 | Formfactor, Inc. | Method of making microelectronic spring contact elements |
US6429112B1 (en) * | 1994-07-07 | 2002-08-06 | Tessera, Inc. | Multi-layer substrates and fabrication processes |
US6499216B1 (en) * | 1994-07-07 | 2002-12-31 | Tessera, Inc. | Methods and structures for electronic probing arrays |
US6848173B2 (en) * | 1994-07-07 | 2005-02-01 | Tessera, Inc. | Microelectric packages having deformed bonded leads and methods therefor |
US6690186B2 (en) | 1994-07-07 | 2004-02-10 | Tessera, Inc. | Methods and structures for electronic probing arrays |
US5688716A (en) | 1994-07-07 | 1997-11-18 | Tessera, Inc. | Fan-out semiconductor chip assembly |
US5495667A (en) * | 1994-11-07 | 1996-03-05 | Micron Technology, Inc. | Method for forming contact pins for semiconductor dice and interconnects |
US6232789B1 (en) * | 1997-05-28 | 2001-05-15 | Cascade Microtech, Inc. | Probe holder for low current measurements |
US20100065963A1 (en) * | 1995-05-26 | 2010-03-18 | Formfactor, Inc. | Method of wirebonding that utilizes a gas flow within a capillary from which a wire is played out |
US5998864A (en) * | 1995-05-26 | 1999-12-07 | Formfactor, Inc. | Stacking semiconductor devices, particularly memory chips |
EP2063466A2 (en) | 1995-05-26 | 2009-05-27 | FormFactor, Inc. | Interconnection element and method of fabrication thereof |
US6150186A (en) * | 1995-05-26 | 2000-11-21 | Formfactor, Inc. | Method of making a product with improved material properties by moderate heat-treatment of a metal incorporating a dilute additive |
US20020004320A1 (en) | 1995-05-26 | 2002-01-10 | David V. Pedersen | Attaratus for socketably receiving interconnection elements of an electronic component |
US5729150A (en) | 1995-12-01 | 1998-03-17 | Cascade Microtech, Inc. | Low-current probe card with reduced triboelectric current generating cables |
US8033838B2 (en) | 1996-02-21 | 2011-10-11 | Formfactor, Inc. | Microelectronic contact structure |
US6880245B2 (en) * | 1996-03-12 | 2005-04-19 | International Business Machines Corporation | Method for fabricating a structure for making contact with an IC device |
JPH09260428A (ja) * | 1996-03-19 | 1997-10-03 | Toshiba Corp | 半導体装置及びその実装方法 |
JP2001526833A (ja) * | 1996-05-17 | 2001-12-18 | フォームファクター,インコーポレイテッド | ウェーハレベルのバーンインおよびテスト |
EP2058667A2 (en) | 1996-05-17 | 2009-05-13 | FormFactor, Inc. | Microelectronic spring contact element |
WO1997043654A1 (en) * | 1996-05-17 | 1997-11-20 | Formfactor, Inc. | Microelectronic spring contact elements |
EP1321978B1 (en) * | 1996-05-17 | 2010-02-17 | FormFactor, Inc. | Contact structure |
JP3328135B2 (ja) * | 1996-05-28 | 2002-09-24 | 田中電子工業株式会社 | バンプ形成用金合金線及びバンプ形成方法 |
US5914613A (en) * | 1996-08-08 | 1999-06-22 | Cascade Microtech, Inc. | Membrane probing system with local contact scrub |
US7282945B1 (en) | 1996-09-13 | 2007-10-16 | International Business Machines Corporation | Wafer scale high density probe assembly, apparatus for use thereof and methods of fabrication thereof |
DE69734158T2 (de) | 1996-09-13 | 2006-06-22 | International Business Machines Corp. | Prüfkopfstruktur mit mehreren getrennten isolierten prüfspitzen |
EP0925510B1 (en) | 1996-09-13 | 2007-04-11 | International Business Machines Corporation | Integrated compliant probe for wafer level test and burn-in |
DE69737621T2 (de) * | 1996-10-01 | 2007-12-20 | Matsushita Electric Industrial Co., Ltd., Kadoma | Halbleiterelement mit einer Höckerelektrode |
SG71046A1 (en) | 1996-10-10 | 2000-03-21 | Connector Systems Tech Nv | High density connector and method of manufacture |
US5989939A (en) * | 1996-12-13 | 1999-11-23 | Tessera, Inc. | Process of manufacturing compliant wirebond packages |
US6690185B1 (en) | 1997-01-15 | 2004-02-10 | Formfactor, Inc. | Large contactor with multiple, aligned contactor units |
US7063541B2 (en) | 1997-03-17 | 2006-06-20 | Formfactor, Inc. | Composite microelectronic spring structure and method for making same |
US5929521A (en) * | 1997-03-26 | 1999-07-27 | Micron Technology, Inc. | Projected contact structure for bumped semiconductor device and resulting articles and assemblies |
US7321485B2 (en) | 1997-04-08 | 2008-01-22 | X2Y Attenuators, Llc | Arrangement for energy conditioning |
US9054094B2 (en) | 1997-04-08 | 2015-06-09 | X2Y Attenuators, Llc | Energy conditioning circuit arrangement for integrated circuit |
US7301748B2 (en) | 1997-04-08 | 2007-11-27 | Anthony Anthony A | Universal energy conditioning interposer with circuit architecture |
US7110235B2 (en) * | 1997-04-08 | 2006-09-19 | Xzy Altenuators, Llc | Arrangement for energy conditioning |
US7336468B2 (en) | 1997-04-08 | 2008-02-26 | X2Y Attenuators, Llc | Arrangement for energy conditioning |
US6215166B1 (en) * | 1997-04-30 | 2001-04-10 | Motorola, Inc. | Radio frequency electronic device and method for regulating an amount of power delivered to a radio frequency electronic device |
US7714235B1 (en) | 1997-05-06 | 2010-05-11 | Formfactor, Inc. | Lithographically defined microelectronic contact structures |
US6034533A (en) | 1997-06-10 | 2000-03-07 | Tervo; Paul A. | Low-current pogo probe card |
US6215196B1 (en) * | 1997-06-30 | 2001-04-10 | Formfactor, Inc. | Electronic component with terminals and spring contact elements extending from areas which are remote from the terminals |
WO1999000844A2 (en) * | 1997-06-30 | 1999-01-07 | Formfactor, Inc. | Sockets for semiconductor devices with spring contact elements |
US6534855B1 (en) * | 1997-08-22 | 2003-03-18 | Micron Technology, Inc. | Wireless communications system and method of making |
US6329829B1 (en) | 1997-08-22 | 2001-12-11 | Micron Technology, Inc. | Interconnect and system for making temporary electrical connections to semiconductor components |
JPH11121897A (ja) * | 1997-10-14 | 1999-04-30 | Fujitsu Ltd | 複数の回路素子を基板上に搭載するプリント配線基板の製造方法及びプリント配線基板の構造 |
US6114240A (en) * | 1997-12-18 | 2000-09-05 | Micron Technology, Inc. | Method for fabricating semiconductor components using focused laser beam |
US5994221A (en) * | 1998-01-30 | 1999-11-30 | Lucent Technologies Inc. | Method of fabricating aluminum-indium (or thallium) vias for ULSI metallization and interconnects |
US6281446B1 (en) * | 1998-02-16 | 2001-08-28 | Matsushita Electric Industrial Co., Ltd. | Multi-layered circuit board and method of manufacturing the same |
JP4006081B2 (ja) * | 1998-03-19 | 2007-11-14 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
US6222276B1 (en) | 1998-04-07 | 2001-04-24 | International Business Machines Corporation | Through-chip conductors for low inductance chip-to-chip integration and off-chip connections |
US6720501B1 (en) | 1998-04-14 | 2004-04-13 | Formfactor, Inc. | PC board having clustered blind vias |
TW366548B (en) * | 1998-04-18 | 1999-08-11 | United Microelectronics Corp | Trench bump block and the application of the same |
SG108210A1 (en) * | 1998-06-19 | 2005-01-28 | Advantest Corp | Probe contactor formed by photolithography process |
US6164523A (en) * | 1998-07-01 | 2000-12-26 | Semiconductor Components Industries, Llc | Electronic component and method of manufacture |
US7304486B2 (en) * | 1998-07-08 | 2007-12-04 | Capres A/S | Nano-drive for high resolution positioning and for positioning of a multi-point probe |
AU4897399A (en) * | 1998-07-08 | 2000-02-01 | Capres Aps | Multi-point probe |
US6664628B2 (en) | 1998-07-13 | 2003-12-16 | Formfactor, Inc. | Electronic component overlapping dice of unsingulated semiconductor wafer |
US6705876B2 (en) * | 1998-07-13 | 2004-03-16 | Formfactor, Inc. | Electrical interconnect assemblies and methods |
US6256882B1 (en) * | 1998-07-14 | 2001-07-10 | Cascade Microtech, Inc. | Membrane probing system |
JP2000138104A (ja) * | 1998-08-26 | 2000-05-16 | Yazaki Corp | 回路保護素子の検査構造 |
US6184576B1 (en) * | 1998-09-21 | 2001-02-06 | Advantest Corp. | Packaging and interconnection of contact structure |
US6414501B2 (en) * | 1998-10-01 | 2002-07-02 | Amst Co., Ltd. | Micro cantilever style contact pin structure for wafer probing |
GB2342509A (en) * | 1998-10-05 | 2000-04-12 | Standex Int Corp | Surface mount reed switch having transverse feet formed from leads |
JP2000311915A (ja) * | 1998-10-14 | 2000-11-07 | Texas Instr Inc <Ti> | 半導体デバイス及びボンディング方法 |
JP2000200804A (ja) * | 1998-10-30 | 2000-07-18 | Shinko Electric Ind Co Ltd | 半導体装置及びその製造方法 |
US6441315B1 (en) | 1998-11-10 | 2002-08-27 | Formfactor, Inc. | Contact structures with blades having a wiping motion |
US6608385B2 (en) | 1998-11-30 | 2003-08-19 | Advantest Corp. | Contact structure and production method thereof and probe contact assembly using same |
US6540524B1 (en) * | 2000-02-14 | 2003-04-01 | Advantest Corp. | Contact structure and production method thereof |
US6579804B1 (en) * | 1998-11-30 | 2003-06-17 | Advantest, Corp. | Contact structure and production method thereof and probe contact assembly using same |
US6504223B1 (en) * | 1998-11-30 | 2003-01-07 | Advantest Corp. | Contact structure and production method thereof and probe contact assembly using same |
US6456099B1 (en) | 1998-12-31 | 2002-09-24 | Formfactor, Inc. | Special contact points for accessing internal circuitry of an integrated circuit |
JP3530761B2 (ja) * | 1999-01-18 | 2004-05-24 | 新光電気工業株式会社 | 半導体装置 |
JP3160583B2 (ja) * | 1999-01-27 | 2001-04-25 | 日本特殊陶業株式会社 | 樹脂製基板 |
US6274937B1 (en) * | 1999-02-01 | 2001-08-14 | Micron Technology, Inc. | Silicon multi-chip module packaging with integrated passive components and method of making |
US6079990A (en) * | 1999-02-02 | 2000-06-27 | Molex Incorporated | Terminal-receiving socket for mounting on a circuit board |
AU3623000A (en) * | 1999-03-10 | 2000-09-28 | Tessera, Inc. | Microelectronic joining processes |
US6183267B1 (en) * | 1999-03-11 | 2001-02-06 | Murray Hill Devices | Ultra-miniature electrical contacts and method of manufacture |
WO2000065888A1 (en) * | 1999-04-22 | 2000-11-02 | Rohm Co., Ltd. | Circuit board, battery pack, and method of manufacturing circuit board |
US7382142B2 (en) * | 2000-05-23 | 2008-06-03 | Nanonexus, Inc. | High density interconnect system having rapid fabrication cycle |
US6799976B1 (en) * | 1999-07-28 | 2004-10-05 | Nanonexus, Inc. | Construction structures and manufacturing processes for integrated circuit wafer probe card assemblies |
US7247035B2 (en) * | 2000-06-20 | 2007-07-24 | Nanonexus, Inc. | Enhanced stress metal spring contactor |
US6812718B1 (en) | 1999-05-27 | 2004-11-02 | Nanonexus, Inc. | Massively parallel interface for electronic circuits |
US6917525B2 (en) * | 2001-11-27 | 2005-07-12 | Nanonexus, Inc. | Construction structures and manufacturing processes for probe card assemblies and packages having wafer level springs |
US6791171B2 (en) | 2000-06-20 | 2004-09-14 | Nanonexus, Inc. | Systems for testing and packaging integrated circuits |
US7349223B2 (en) * | 2000-05-23 | 2008-03-25 | Nanonexus, Inc. | Enhanced compliant probe card systems having improved planarity |
US6710609B2 (en) * | 2002-07-15 | 2004-03-23 | Nanonexus, Inc. | Mosaic decal probe |
US6578264B1 (en) * | 1999-06-04 | 2003-06-17 | Cascade Microtech, Inc. | Method for constructing a membrane probe using a depression |
US7215131B1 (en) | 1999-06-07 | 2007-05-08 | Formfactor, Inc. | Segmented contactor |
US6287126B1 (en) * | 1999-06-25 | 2001-09-11 | International Business Machines Corporation | Mechanical attachment means used as electrical connection |
US6329722B1 (en) * | 1999-07-01 | 2001-12-11 | Texas Instruments Incorporated | Bonding pads for integrated circuits having copper interconnect metallization |
US6407562B1 (en) * | 1999-07-29 | 2002-06-18 | Agilent Technologies, Inc. | Probe tip terminating device providing an easily changeable feed-through termination |
US6713374B2 (en) | 1999-07-30 | 2004-03-30 | Formfactor, Inc. | Interconnect assemblies and methods |
US7435108B1 (en) * | 1999-07-30 | 2008-10-14 | Formfactor, Inc. | Variable width resilient conductive contact structures |
JP2010192928A (ja) * | 1999-08-12 | 2010-09-02 | Fujitsu Semiconductor Ltd | 半導体装置及びその製造方法 |
US6468098B1 (en) * | 1999-08-17 | 2002-10-22 | Formfactor, Inc. | Electrical contactor especially wafer level contactor using fluid pressure |
JP2001060596A (ja) * | 1999-08-19 | 2001-03-06 | Shinko Electric Ind Co Ltd | 半導体装置の製造方法 |
WO2001017320A1 (en) * | 1999-08-27 | 2001-03-08 | Lex Kosowsky | Current carrying structure using voltage switchable dielectric material |
US7825491B2 (en) | 2005-11-22 | 2010-11-02 | Shocking Technologies, Inc. | Light-emitting device using voltage switchable dielectric material |
US7695644B2 (en) * | 1999-08-27 | 2010-04-13 | Shocking Technologies, Inc. | Device applications for voltage switchable dielectric material having high aspect ratio particles |
US7446030B2 (en) * | 1999-08-27 | 2008-11-04 | Shocking Technologies, Inc. | Methods for fabricating current-carrying structures using voltage switchable dielectric materials |
US6340822B1 (en) * | 1999-10-05 | 2002-01-22 | Agere Systems Guardian Corp. | Article comprising vertically nano-interconnected circuit devices and method for making the same |
US6853067B1 (en) | 1999-10-12 | 2005-02-08 | Microassembly Technologies, Inc. | Microelectromechanical systems using thermocompression bonding |
EP1096674B1 (en) * | 1999-10-29 | 2013-03-27 | Kyocera Corporation | Circuit substrate |
US6342399B1 (en) * | 1999-11-08 | 2002-01-29 | Agere Systems Guardian Corp. | Testing integrated circuits |
US6392428B1 (en) * | 1999-11-16 | 2002-05-21 | Eaglestone Partners I, Llc | Wafer level interposer |
JP2001174482A (ja) * | 1999-12-21 | 2001-06-29 | Toshiba Corp | 電気的特性評価用接触針、プローブ構造体、プローブカード、および電気的特性評価用接触針の製造方法 |
DE19961791C2 (de) * | 1999-12-21 | 2002-11-28 | Infineon Technologies Ag | Anordnung zum Testen von Chips mittels einer gedruckten Schaltungsplatte |
US6827584B2 (en) * | 1999-12-28 | 2004-12-07 | Formfactor, Inc. | Interconnect for microelectronic structures with enhanced spring characteristics |
SG94730A1 (en) * | 2000-01-19 | 2003-03-18 | Advantest Corp | Contact structure having contact bumps |
EP1121009A3 (en) * | 2000-01-28 | 2004-06-16 | Kabushiki Kaisha Toshiba | Power semiconductor module for use in power conversion units with downsizing requirements |
US6641430B2 (en) | 2000-02-14 | 2003-11-04 | Advantest Corp. | Contact structure and production method thereof and probe contact assembly using same |
US6676438B2 (en) | 2000-02-14 | 2004-01-13 | Advantest Corp. | Contact structure and production method thereof and probe contact assembly using same |
US6838890B2 (en) * | 2000-02-25 | 2005-01-04 | Cascade Microtech, Inc. | Membrane probing system |
US7262611B2 (en) * | 2000-03-17 | 2007-08-28 | Formfactor, Inc. | Apparatuses and methods for planarizing a semiconductor contactor |
JP4323055B2 (ja) * | 2000-03-22 | 2009-09-02 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置試験用コンタクタ及びその製造方法 |
US6424167B1 (en) | 2000-03-22 | 2002-07-23 | National Semiconductor Corporation | Vibration resistant test module for use with semiconductor device test apparatus |
JP4088015B2 (ja) * | 2000-03-24 | 2008-05-21 | 株式会社新川 | 湾曲状ワイヤの形成方法 |
DE10017746B4 (de) * | 2000-04-10 | 2005-10-13 | Infineon Technologies Ag | Verfahren zur Herstellung eines elektronischen Bauteils mit mikroskopisch kleinen Kontaktflächen |
US6640432B1 (en) * | 2000-04-12 | 2003-11-04 | Formfactor, Inc. | Method of fabricating shaped springs |
US7458816B1 (en) | 2000-04-12 | 2008-12-02 | Formfactor, Inc. | Shaped spring |
US6833984B1 (en) * | 2000-05-03 | 2004-12-21 | Rambus, Inc. | Semiconductor module with serial bus connection to multiple dies |
US7122889B2 (en) * | 2000-05-03 | 2006-10-17 | Rambus, Inc. | Semiconductor module |
US6396296B1 (en) * | 2000-05-15 | 2002-05-28 | Advanced Micro Devices, Inc. | Method and apparatus for electrical characterization of an integrated circuit package using a vertical probe station |
US7952373B2 (en) | 2000-05-23 | 2011-05-31 | Verigy (Singapore) Pte. Ltd. | Construction structures and manufacturing processes for integrated circuit wafer probe card assemblies |
US20050068054A1 (en) * | 2000-05-23 | 2005-03-31 | Sammy Mok | Standardized layout patterns and routing structures for integrated circuit wafer probe card assemblies |
JP3879816B2 (ja) * | 2000-06-02 | 2007-02-14 | セイコーエプソン株式会社 | 半導体装置及びその製造方法、積層型半導体装置、回路基板並びに電子機器 |
US20020113322A1 (en) * | 2000-06-12 | 2002-08-22 | Shinichi Terashima | Semiconductor device and method to produce the same |
US6332782B1 (en) | 2000-06-19 | 2001-12-25 | International Business Machines Corporation | Spatial transformation interposer for electronic packaging |
US6459039B1 (en) | 2000-06-19 | 2002-10-01 | International Business Machines Corporation | Method and apparatus to manufacture an electronic package with direct wiring pattern |
US6717062B2 (en) * | 2000-07-03 | 2004-04-06 | Rohm Co., Ltd. | Battery pack and battery case used for the same, and method for producing the same |
US6812048B1 (en) | 2000-07-31 | 2004-11-02 | Eaglestone Partners I, Llc | Method for manufacturing a wafer-interposer assembly |
US6537831B1 (en) * | 2000-07-31 | 2003-03-25 | Eaglestone Partners I, Llc | Method for selecting components for a matched set using a multi wafer interposer |
US6822469B1 (en) | 2000-07-31 | 2004-11-23 | Eaglestone Partners I, Llc | Method for testing multiple semiconductor wafers |
US6462575B1 (en) | 2000-08-28 | 2002-10-08 | Micron Technology, Inc. | Method and system for wafer level testing and burning-in semiconductor components |
WO2002023618A1 (fr) * | 2000-09-18 | 2002-03-21 | Nippon Steel Corporation | Fil de connexion de semi-conducteur et son procede de fabrication |
US6589819B2 (en) * | 2000-09-29 | 2003-07-08 | Tessera, Inc. | Microelectronic packages having an array of resilient leads and methods therefor |
US6815712B1 (en) | 2000-10-02 | 2004-11-09 | Eaglestone Partners I, Llc | Method for selecting components for a matched set from a wafer-interposer assembly |
JP3450290B2 (ja) * | 2000-10-17 | 2003-09-22 | 山形日本電気株式会社 | 液晶パネル駆動回路 |
US6686657B1 (en) * | 2000-11-07 | 2004-02-03 | Eaglestone Partners I, Llc | Interposer for improved handling of semiconductor wafers and method of use of same |
US20020096421A1 (en) * | 2000-11-29 | 2002-07-25 | Cohn Michael B. | MEMS device with integral packaging |
DE20114544U1 (de) * | 2000-12-04 | 2002-02-21 | Cascade Microtech Inc | Wafersonde |
US6524885B2 (en) * | 2000-12-15 | 2003-02-25 | Eaglestone Partners I, Llc | Method, apparatus and system for building an interposer onto a semiconductor wafer using laser techniques |
US7348494B1 (en) * | 2000-12-15 | 2008-03-25 | Nortel Networks Limited | Signal layer interconnects |
US6529022B2 (en) * | 2000-12-15 | 2003-03-04 | Eaglestone Pareners I, Llc | Wafer testing interposer for a conventional package |
US20020078401A1 (en) * | 2000-12-15 | 2002-06-20 | Fry Michael Andrew | Test coverage analysis system |
US6750396B2 (en) | 2000-12-15 | 2004-06-15 | Di/Dt, Inc. | I-channel surface-mount connector |
JP3910363B2 (ja) | 2000-12-28 | 2007-04-25 | 富士通株式会社 | 外部接続端子 |
JP4674970B2 (ja) * | 2001-01-09 | 2011-04-20 | Okiセミコンダクタ株式会社 | 金属線のボンディング方法 |
US6539625B2 (en) * | 2001-01-11 | 2003-04-01 | International Business Machines Corporation | Chromium adhesion layer for copper vias in low-k technology |
US6885106B1 (en) * | 2001-01-11 | 2005-04-26 | Tessera, Inc. | Stacked microelectronic assemblies and methods of making same |
US6532654B2 (en) * | 2001-01-12 | 2003-03-18 | International Business Machines Corporation | Method of forming an electrical connector |
JP3486872B2 (ja) * | 2001-01-26 | 2004-01-13 | Necセミコンダクターズ九州株式会社 | 半導体装置及びその製造方法 |
JP2002231399A (ja) * | 2001-02-02 | 2002-08-16 | Fujitsu Ltd | 半導体装置試験用コンタクタ及びその製造方法 |
US6673653B2 (en) * | 2001-02-23 | 2004-01-06 | Eaglestone Partners I, Llc | Wafer-interposer using a ceramic substrate |
US20020163062A1 (en) * | 2001-02-26 | 2002-11-07 | International Business Machines Corporation | Multiple material stacks with a stress relief layer between a metal structure and a passivation layer |
US7396236B2 (en) * | 2001-03-16 | 2008-07-08 | Formfactor, Inc. | Wafer level interposer |
US6884653B2 (en) * | 2001-03-21 | 2005-04-26 | Micron Technology, Inc. | Folded interposer |
US6627980B2 (en) | 2001-04-12 | 2003-09-30 | Formfactor, Inc. | Stacked semiconductor device assembly with microelectronic spring contacts |
US6655018B2 (en) * | 2001-04-30 | 2003-12-02 | Delphi Technologies, Inc. | Technique for surface mounting electrical components to a circuit board |
JP2002343478A (ja) | 2001-05-16 | 2002-11-29 | Tyco Electronics Amp Kk | 電気コンタクトおよびそれを用いた電気接続部材 |
US20020173072A1 (en) * | 2001-05-18 | 2002-11-21 | Larson Thane M. | Data capture plate for substrate components |
US6545226B2 (en) * | 2001-05-31 | 2003-04-08 | International Business Machines Corporation | Printed wiring board interposer sub-assembly |
US6585527B2 (en) | 2001-05-31 | 2003-07-01 | Samtec, Inc. | Compliant connector for land grid array |
US6560861B2 (en) * | 2001-07-11 | 2003-05-13 | Xerox Corporation | Microspring with conductive coating deposited on tip after release |
US6788085B2 (en) * | 2001-07-11 | 2004-09-07 | International Business Machines Corporation | Self-aligning wafer burn-in probe |
US6729019B2 (en) * | 2001-07-11 | 2004-05-04 | Formfactor, Inc. | Method of manufacturing a probe card |
US6806568B2 (en) * | 2001-07-20 | 2004-10-19 | The Board Of Trustees Of The University Of Arkansas | Decoupling capacitor for integrated circuit package and electrical components using the decoupling capacitor and associated methods |
GB2377654A (en) * | 2001-07-20 | 2003-01-22 | Alex Chang | Artificial eye for dolls |
US7182672B2 (en) * | 2001-08-02 | 2007-02-27 | Sv Probe Pte. Ltd. | Method of probe tip shaping and cleaning |
WO2003052435A1 (en) | 2001-08-21 | 2003-06-26 | Cascade Microtech, Inc. | Membrane probing system |
US20030038356A1 (en) * | 2001-08-24 | 2003-02-27 | Derderian James M | Semiconductor devices including stacking spacers thereon, assemblies including the semiconductor devices, and methods |
US20030042615A1 (en) * | 2001-08-30 | 2003-03-06 | Tongbi Jiang | Stacked microelectronic devices and methods of fabricating same |
US20030176066A1 (en) * | 2001-09-12 | 2003-09-18 | Yu Zhou | Contact structure and production method thereof and probe contact assemly using same |
US6764869B2 (en) * | 2001-09-12 | 2004-07-20 | Formfactor, Inc. | Method of assembling and testing an electronics module |
US6714828B2 (en) * | 2001-09-17 | 2004-03-30 | Formfactor, Inc. | Method and system for designing a probe card |
US6977515B2 (en) * | 2001-09-20 | 2005-12-20 | Wentworth Laboratories, Inc. | Method for forming photo-defined micro electrical contacts |
US6906540B2 (en) * | 2001-09-20 | 2005-06-14 | Wentworth Laboratories, Inc. | Method for chemically etching photo-defined micro electrical contacts |
US6882546B2 (en) * | 2001-10-03 | 2005-04-19 | Formfactor, Inc. | Multiple die interconnect system |
US6817052B2 (en) * | 2001-11-09 | 2004-11-16 | Formfactor, Inc. | Apparatuses and methods for cleaning test probes |
US6608390B2 (en) * | 2001-11-13 | 2003-08-19 | Kulicke & Soffa Investments, Inc. | Wirebonded semiconductor package structure and method of manufacture |
US7244367B2 (en) * | 2001-12-11 | 2007-07-17 | Jds Uniphase Corporation | Metal alloy elements in micromachined devices |
US6798073B2 (en) * | 2001-12-13 | 2004-09-28 | Megic Corporation | Chip structure and process for forming the same |
US6960923B2 (en) * | 2001-12-19 | 2005-11-01 | Formfactor, Inc. | Probe card covering system and method |
US7168160B2 (en) * | 2001-12-21 | 2007-01-30 | Formfactor, Inc. | Method for mounting and heating a plurality of microelectronic components |
EP1940213A3 (en) | 2001-12-27 | 2009-12-16 | FormFactor, Inc. | Cooling assembly with direct cooling of active electronic components |
US6891385B2 (en) * | 2001-12-27 | 2005-05-10 | Formfactor, Inc. | Probe card cooling assembly with direct cooling of active electronic components |
US7064953B2 (en) * | 2001-12-27 | 2006-06-20 | Formfactor, Inc. | Electronic package with direct cooling of active electronic components |
US6896760B1 (en) | 2002-01-16 | 2005-05-24 | Micron Technology, Inc. | Fabrication of stacked microelectronic devices |
US6840374B2 (en) | 2002-01-18 | 2005-01-11 | Igor Y. Khandros | Apparatus and method for cleaning test probes |
US6712621B2 (en) * | 2002-01-23 | 2004-03-30 | High Connection Density, Inc. | Thermally enhanced interposer and method |
US6721189B1 (en) * | 2002-03-13 | 2004-04-13 | Rambus, Inc. | Memory module |
TWI288958B (en) * | 2002-03-18 | 2007-10-21 | Nanonexus Inc | A miniaturized contact spring |
DE10392441T5 (de) * | 2002-03-18 | 2005-07-07 | Nanonexus, Inc., Fremont | Eine miniaturisierte Kontaktfeder |
JP4054208B2 (ja) * | 2002-04-01 | 2008-02-27 | 富士通株式会社 | コンタクタの製造方法 |
US7010854B2 (en) * | 2002-04-10 | 2006-03-14 | Formfactor, Inc. | Re-assembly process for MEMS structures |
US20050067292A1 (en) * | 2002-05-07 | 2005-03-31 | Microfabrica Inc. | Electrochemically fabricated structures having dielectric or active bases and methods of and apparatus for producing such structures |
US20050104609A1 (en) * | 2003-02-04 | 2005-05-19 | Microfabrica Inc. | Microprobe tips and methods for making |
US20070045121A1 (en) * | 2002-05-07 | 2007-03-01 | Microfabrica Inc. | Electrochemically fabricated hermetically sealed microstructures and methods of and apparatus for producing such structures |
US7273812B2 (en) * | 2002-05-07 | 2007-09-25 | Microfabrica Inc. | Microprobe tips and methods for making |
US7363705B2 (en) * | 2003-02-04 | 2008-04-29 | Microfabrica, Inc. | Method of making a contact |
US20060108678A1 (en) | 2002-05-07 | 2006-05-25 | Microfabrica Inc. | Probe arrays and method for making |
US7640651B2 (en) * | 2003-12-31 | 2010-01-05 | Microfabrica Inc. | Fabrication process for co-fabricating multilayer probe array and a space transformer |
US20060238209A1 (en) * | 2002-05-07 | 2006-10-26 | Microfabrica Inc. | Vertical microprobes for contacting electronic components and method for making such probes |
US20050184748A1 (en) * | 2003-02-04 | 2005-08-25 | Microfabrica Inc. | Pin-type probes for contacting electronic circuits and methods for making such probes |
US20060053625A1 (en) * | 2002-05-07 | 2006-03-16 | Microfabrica Inc. | Microprobe tips and methods for making |
WO2003095711A2 (en) * | 2002-05-07 | 2003-11-20 | Memgen Corporation | Electrochemically fabricated structures having dielectric or active bases |
US20060051948A1 (en) * | 2003-02-04 | 2006-03-09 | Microfabrica Inc. | Microprobe tips and methods for making |
US7531077B2 (en) | 2003-02-04 | 2009-05-12 | Microfabrica Inc. | Electrochemical fabrication process for forming multilayer multimaterial microprobe structures |
US20050142739A1 (en) * | 2002-05-07 | 2005-06-30 | Microfabrica Inc. | Probe arrays and method for making |
US20060006888A1 (en) * | 2003-02-04 | 2006-01-12 | Microfabrica Inc. | Electrochemically fabricated microprobes |
US7265565B2 (en) | 2003-02-04 | 2007-09-04 | Microfabrica Inc. | Cantilever microprobes for contacting electronic components and methods for making such probes |
US7412767B2 (en) * | 2003-02-04 | 2008-08-19 | Microfabrica, Inc. | Microprobe tips and methods for making |
US6965244B2 (en) * | 2002-05-08 | 2005-11-15 | Formfactor, Inc. | High performance probe system |
US6911835B2 (en) * | 2002-05-08 | 2005-06-28 | Formfactor, Inc. | High performance probe system |
US20040000428A1 (en) * | 2002-06-26 | 2004-01-01 | Mirng-Ji Lii | Socketless package to circuit board assemblies and methods of using same |
AU2002368160A1 (en) * | 2002-07-15 | 2004-02-25 | Formfactor, Inc. | Fiducial alignment marks on microelectronic spring contacts |
US6612161B1 (en) * | 2002-07-23 | 2003-09-02 | Fidelica Microsystems, Inc. | Atomic force microscopy measurements of contact resistance and current-dependent stiction |
DE10242521A1 (de) * | 2002-09-12 | 2004-03-25 | Robert Bosch Gmbh | Diode |
WO2004034068A2 (en) * | 2002-10-10 | 2004-04-22 | Advantest Corporation | Contact structure and production method thereof and probe contact assembly using same |
US6724205B1 (en) | 2002-11-13 | 2004-04-20 | Cascade Microtech, Inc. | Probe for combined signals |
JP2004172477A (ja) | 2002-11-21 | 2004-06-17 | Kaijo Corp | ワイヤループ形状、そのワイヤループ形状を備えた半導体装置、ワイヤボンディング方法及び半導体製造装置 |
US6920689B2 (en) * | 2002-12-06 | 2005-07-26 | Formfactor, Inc. | Method for making a socket to perform testing on integrated circuits |
US7084650B2 (en) * | 2002-12-16 | 2006-08-01 | Formfactor, Inc. | Apparatus and method for limiting over travel in a probe card assembly |
US20040114338A1 (en) * | 2002-12-17 | 2004-06-17 | Blasko Raymond J. | Direct connection to a circuit board |
US6945827B2 (en) * | 2002-12-23 | 2005-09-20 | Formfactor, Inc. | Microelectronic contact structure |
US20040124507A1 (en) * | 2002-12-30 | 2004-07-01 | Aldaz Robert Edward | Contact structure and production method thereof |
US10416192B2 (en) | 2003-02-04 | 2019-09-17 | Microfabrica Inc. | Cantilever microprobes for contacting electronic components |
US8613846B2 (en) * | 2003-02-04 | 2013-12-24 | Microfabrica Inc. | Multi-layer, multi-material fabrication methods for producing micro-scale and millimeter-scale devices with enhanced electrical and/or mechanical properties |
US7567089B2 (en) * | 2003-02-04 | 2009-07-28 | Microfabrica Inc. | Two-part microprobes for contacting electronic components and methods for making such probes |
US20080157793A1 (en) * | 2003-02-04 | 2008-07-03 | Microfabrica Inc. | Vertical Microprobes for Contacting Electronic Components and Method for Making Such Probes |
US20080211524A1 (en) * | 2003-02-04 | 2008-09-04 | Microfabrica Inc. | Electrochemically Fabricated Microprobes |
US9244101B2 (en) * | 2003-02-04 | 2016-01-26 | University Of Southern California | Electrochemical fabrication process for forming multilayer multimaterial microprobe structures |
US7505862B2 (en) * | 2003-03-07 | 2009-03-17 | Salmon Technologies, Llc | Apparatus and method for testing electronic systems |
SG124273A1 (en) * | 2004-03-08 | 2006-08-30 | Tan Yin Leong | Non-abrasive electrical test contact |
US6815836B2 (en) * | 2003-03-24 | 2004-11-09 | Texas Instruments Incorporated | Wire bonding for thin semiconductor package |
US6948940B2 (en) * | 2003-04-10 | 2005-09-27 | Formfactor, Inc. | Helical microelectronic contact and method for fabricating same |
US6965245B2 (en) * | 2003-05-01 | 2005-11-15 | K&S Interconnect, Inc. | Prefabricated and attached interconnect structure |
US9671429B2 (en) | 2003-05-07 | 2017-06-06 | University Of Southern California | Multi-layer, multi-material micro-scale and millimeter-scale devices with enhanced electrical and/or mechanical properties |
US7057404B2 (en) | 2003-05-23 | 2006-06-06 | Sharp Laboratories Of America, Inc. | Shielded probe for testing a device under test |
US6953707B2 (en) * | 2003-05-28 | 2005-10-11 | Texas Instruments Incorporated | Method and system for chip-to-package interconnection |
US7326327B2 (en) * | 2003-06-06 | 2008-02-05 | Formfactor, Inc. | Rhodium electroplated structures and methods of making same |
US7242097B2 (en) * | 2003-06-30 | 2007-07-10 | Intel Corporation | Electromigration barrier layers for solder joints |
US7456050B2 (en) * | 2003-07-01 | 2008-11-25 | Stmicroelectronics, Inc. | System and method for controlling integrated circuit die height and planarity |
WO2006017078A2 (en) * | 2004-07-07 | 2006-02-16 | Cascade Microtech, Inc. | Probe head having a membrane suspended probe |
US7304376B2 (en) * | 2003-07-30 | 2007-12-04 | Tessers, Inc. | Microelectronic assemblies with springs |
US6958670B2 (en) * | 2003-08-01 | 2005-10-25 | Raytheon Company | Offset connector with compressible conductor |
US7408258B2 (en) * | 2003-08-20 | 2008-08-05 | Salmon Technologies, Llc | Interconnection circuit and electronic module utilizing same |
DE10340297B4 (de) * | 2003-09-02 | 2006-07-20 | Semikron Elektronik Gmbh & Co. Kg | Verbindugsanordnung zur Verbindung von aktiven und passiven elektrischen und elektronischen Bauelementen |
US7298030B2 (en) * | 2003-09-26 | 2007-11-20 | Tessera, Inc. | Structure and method of making sealed capped chips |
US6881074B1 (en) * | 2003-09-29 | 2005-04-19 | Cookson Electronics, Inc. | Electrical circuit assembly with micro-socket |
US7179688B2 (en) * | 2003-10-16 | 2007-02-20 | Kulicke And Soffa Industries, Inc. | Method for reducing or eliminating semiconductor device wire sweep in a multi-tier bonding device and a device produced by the method |
US6847122B1 (en) * | 2003-10-16 | 2005-01-25 | Kulicke & Soffa Investments, Inc. | System and method for preventing and alleviating short circuiting in a semiconductor device |
JP2005127952A (ja) * | 2003-10-27 | 2005-05-19 | Sumitomo Electric Ind Ltd | コンタクトプローブおよびその製造方法 |
EP1678761A1 (en) * | 2003-10-29 | 2006-07-12 | Conductive Inkjet Technology Limited | Electrical connection of components |
US7243421B2 (en) * | 2003-10-29 | 2007-07-17 | Conductive Inkjet Technology Limited | Electrical connection of components |
US20050116344A1 (en) * | 2003-10-29 | 2005-06-02 | Tessera, Inc. | Microelectronic element having trace formed after bond layer |
EP1692529A4 (en) | 2003-11-14 | 2014-03-26 | Wentworth Lab Inc | CHIP DICE WITH INTEGRATED ASSEMBLY ASSISTANCE |
US7024763B2 (en) | 2003-11-26 | 2006-04-11 | Formfactor, Inc. | Methods for making plated through holes usable as interconnection wire or probe attachments |
EP1698033A4 (en) | 2003-12-22 | 2010-07-21 | X2Y Attenuators Llc | INTERNAL SHIELDED ENERGY PREPARATION |
US7427868B2 (en) | 2003-12-24 | 2008-09-23 | Cascade Microtech, Inc. | Active wafer probe |
US20080108221A1 (en) * | 2003-12-31 | 2008-05-08 | Microfabrica Inc. | Microprobe Tips and Methods for Making |
US20080105355A1 (en) * | 2003-12-31 | 2008-05-08 | Microfabrica Inc. | Probe Arrays and Method for Making |
US10641792B2 (en) | 2003-12-31 | 2020-05-05 | University Of Southern California | Multi-layer, multi-material micro-scale and millimeter-scale devices with enhanced electrical and/or mechanical properties |
TWI266057B (en) * | 2004-02-05 | 2006-11-11 | Ind Tech Res Inst | Integrated probe card and the packaging method |
JP4140012B2 (ja) * | 2004-02-06 | 2008-08-27 | ソニー株式会社 | チップ状電子部品、その製造方法及び実装構造 |
US20050184376A1 (en) * | 2004-02-19 | 2005-08-25 | Salmon Peter C. | System in package |
US7282932B2 (en) * | 2004-03-02 | 2007-10-16 | Micron Technology, Inc. | Compliant contact pin assembly, card system and methods thereof |
CN101166983B (zh) * | 2004-03-10 | 2013-08-14 | 温特沃斯实验室公司 | 灵活的微电路空间转接装置装配 |
US7378742B2 (en) * | 2004-10-27 | 2008-05-27 | Intel Corporation | Compliant interconnects for semiconductors and micromachines |
US7202541B2 (en) * | 2004-04-29 | 2007-04-10 | Hewlett-Packard Development Company, L.P. | Apparatus and method for transverse characterization of materials |
US20050255722A1 (en) * | 2004-05-07 | 2005-11-17 | Salmon Peter C | Micro blade assembly |
US7659739B2 (en) * | 2006-09-14 | 2010-02-09 | Micro Porbe, Inc. | Knee probe having reduced thickness section for control of scrub motion |
US8988091B2 (en) * | 2004-05-21 | 2015-03-24 | Microprobe, Inc. | Multiple contact probes |
US7759949B2 (en) | 2004-05-21 | 2010-07-20 | Microprobe, Inc. | Probes with self-cleaning blunt skates for contacting conductive pads |
US7733101B2 (en) * | 2004-05-21 | 2010-06-08 | Microprobe, Inc. | Knee probe having increased scrub motion |
USRE43503E1 (en) | 2006-06-29 | 2012-07-10 | Microprobe, Inc. | Probe skates for electrical testing of convex pad topologies |
US9097740B2 (en) * | 2004-05-21 | 2015-08-04 | Formfactor, Inc. | Layered probes with core |
US9476911B2 (en) | 2004-05-21 | 2016-10-25 | Microprobe, Inc. | Probes with high current carrying capability and laser machining methods |
US20050277281A1 (en) * | 2004-06-10 | 2005-12-15 | Dubin Valery M | Compliant interconnect and method of formation |
US7183493B2 (en) | 2004-06-30 | 2007-02-27 | Intel Corporation | Electronic assembly having multi-material interconnects |
JP2006019636A (ja) * | 2004-07-05 | 2006-01-19 | Renesas Technology Corp | 半導体装置 |
US20090174423A1 (en) * | 2004-07-21 | 2009-07-09 | Klaerner Peter J | Bond Reinforcement Layer for Probe Test Cards |
WO2006014635A1 (en) | 2004-07-21 | 2006-02-09 | K & S Interconnect, Inc. | Reinforced probes for testing semiconductor devices |
KR100618342B1 (ko) * | 2004-07-29 | 2006-09-04 | 삼성전자주식회사 | 소형 구조물 및 그 제작방법 |
US7750487B2 (en) * | 2004-08-11 | 2010-07-06 | Intel Corporation | Metal-metal bonding of compliant interconnect |
US7385411B2 (en) * | 2004-08-31 | 2008-06-10 | Formfactor, Inc. | Method of designing a probe card apparatus with desired compliance characteristics |
ATE400987T1 (de) * | 2004-09-08 | 2008-07-15 | Murata Manufacturing Co | Zusammengesetztes keramisches substrat |
KR100648039B1 (ko) * | 2004-09-13 | 2006-11-23 | 삼성전자주식회사 | 솔더 볼 형성 방법과 이를 이용한 반도체 패키지의 제조방법 및 구조 |
JP2008512680A (ja) | 2004-09-13 | 2008-04-24 | カスケード マイクロテック インコーポレイテッド | 両面プロービング構造体 |
JP2006108431A (ja) * | 2004-10-06 | 2006-04-20 | Sharp Corp | 半導体装置 |
US7659619B1 (en) * | 2004-10-13 | 2010-02-09 | Sun Microsystems, Inc. | Structures for Z-aligned proximity communication |
US7046027B2 (en) * | 2004-10-15 | 2006-05-16 | Teradyne, Inc. | Interface apparatus for semiconductor device tester |
KR100585561B1 (ko) * | 2004-10-26 | 2006-06-07 | 주식회사 파이컴 | 수직형 전기적 접촉체 및 그 제조방법 |
US8525314B2 (en) | 2004-11-03 | 2013-09-03 | Tessera, Inc. | Stacked packaging improvements |
WO2006137896A2 (en) * | 2004-12-16 | 2006-12-28 | International Business Machines Corporation | Metalized elastomeric probe structure |
US7427809B2 (en) * | 2004-12-16 | 2008-09-23 | Salmon Technologies, Llc | Repairable three-dimensional semiconductor subsystem |
US7771208B2 (en) * | 2004-12-16 | 2010-08-10 | International Business Machines Corporation | Metalized elastomeric electrical contacts |
US20060132152A1 (en) * | 2004-12-20 | 2006-06-22 | Wang Chih Y | Contact-type film probe |
US20070007983A1 (en) * | 2005-01-06 | 2007-01-11 | Salmon Peter C | Semiconductor wafer tester |
US20060170114A1 (en) * | 2005-01-31 | 2006-08-03 | Chao-Yuan Su | Novel method for copper wafer wire bonding |
US7535247B2 (en) | 2005-01-31 | 2009-05-19 | Cascade Microtech, Inc. | Interface for testing semiconductors |
US7656172B2 (en) | 2005-01-31 | 2010-02-02 | Cascade Microtech, Inc. | System for testing semiconductors |
JP2006216911A (ja) * | 2005-02-07 | 2006-08-17 | Renesas Technology Corp | 半導体装置およびカプセル型半導体パッケージ |
US20060180927A1 (en) * | 2005-02-14 | 2006-08-17 | Daisuke Takai | Contact structure and method for manufacturing the same |
US20060183270A1 (en) * | 2005-02-14 | 2006-08-17 | Tessera, Inc. | Tools and methods for forming conductive bumps on microelectronic elements |
US7817397B2 (en) | 2005-03-01 | 2010-10-19 | X2Y Attenuators, Llc | Energy conditioner with tied through electrodes |
JP2008537843A (ja) | 2005-03-01 | 2008-09-25 | エックストゥーワイ アテニュエイターズ,エルエルシー | 内部で重なり合った調整器 |
JP2006245336A (ja) * | 2005-03-03 | 2006-09-14 | Koito Mfg Co Ltd | 発光装置 |
US8143095B2 (en) | 2005-03-22 | 2012-03-27 | Tessera, Inc. | Sequential fabrication of vertical conductive interconnects in capped chips |
EP1866830B1 (en) * | 2005-03-30 | 2008-12-24 | Nxp B.V. | A portable object connectable package |
US7371676B2 (en) * | 2005-04-08 | 2008-05-13 | Micron Technology, Inc. | Method for fabricating semiconductor components with through wire interconnects |
JP4534062B2 (ja) | 2005-04-19 | 2010-09-01 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US8016182B2 (en) | 2005-05-10 | 2011-09-13 | Kaijo Corporation | Wire loop, semiconductor device having same and wire bonding method |
US7692521B1 (en) | 2005-05-12 | 2010-04-06 | Microassembly Technologies, Inc. | High force MEMS device |
US7541826B2 (en) * | 2005-05-13 | 2009-06-02 | Kla-Tencor Corporation | Compliant pad wafer chuck |
JP4036872B2 (ja) * | 2005-05-18 | 2008-01-23 | アルプス電気株式会社 | 半導体装置の製造方法 |
US7393770B2 (en) * | 2005-05-19 | 2008-07-01 | Micron Technology, Inc. | Backside method for fabricating semiconductor components with conductive interconnects |
US7449899B2 (en) * | 2005-06-08 | 2008-11-11 | Cascade Microtech, Inc. | Probe for high frequency signals |
US7388296B2 (en) * | 2005-06-09 | 2008-06-17 | Ngk Spark Plug Co., Ltd. | Wiring substrate and bonding pad composition |
WO2006137979A2 (en) * | 2005-06-13 | 2006-12-28 | Cascade Microtech, Inc. | Wideband active-passive differential signal probe |
DE102005028951B4 (de) | 2005-06-22 | 2018-05-30 | Infineon Technologies Ag | Anordnung zur elektrischen Verbindung einer Halbleiter-Schaltungsanordnung mit einer äusseren Kontakteinrichtung |
US7589406B2 (en) * | 2005-06-27 | 2009-09-15 | Micron Technology, Inc. | Stacked semiconductor component |
DE102005034485B4 (de) * | 2005-07-20 | 2013-08-29 | Infineon Technologies Ag | Verbindungselement für ein Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterleistungsbauelements |
US7362119B2 (en) * | 2005-08-01 | 2008-04-22 | Touchdown Technologies, Inc | Torsion spring probe contactor design |
US20070023889A1 (en) * | 2005-08-01 | 2007-02-01 | Salmon Peter C | Copper substrate with feedthroughs and interconnection circuits |
US20070023923A1 (en) * | 2005-08-01 | 2007-02-01 | Salmon Peter C | Flip chip interface including a mixed array of heat bumps and signal bumps |
US7245135B2 (en) * | 2005-08-01 | 2007-07-17 | Touchdown Technologies, Inc. | Post and tip design for a probe contact |
US20070023904A1 (en) * | 2005-08-01 | 2007-02-01 | Salmon Peter C | Electro-optic interconnection apparatus and method |
US7586747B2 (en) | 2005-08-01 | 2009-09-08 | Salmon Technologies, Llc. | Scalable subsystem architecture having integrated cooling channels |
US7331796B2 (en) * | 2005-09-08 | 2008-02-19 | International Business Machines Corporation | Land grid array (LGA) interposer utilizing metal-on-elastomer hemi-torus and other multiple points of contact geometries |
US20070057685A1 (en) * | 2005-09-14 | 2007-03-15 | Touchdown Technologies, Inc. | Lateral interposer contact design and probe card assembly |
KR100790685B1 (ko) * | 2005-09-16 | 2008-01-02 | 삼성전기주식회사 | 무선통신 단말기의 내장형 안테나 모듈 |
JP4923494B2 (ja) * | 2005-09-22 | 2012-04-25 | 富士通株式会社 | 多層回路基板設計支援方法、プログラム、装置及び多層回路基板 |
US20070090156A1 (en) * | 2005-10-25 | 2007-04-26 | Ramanathan Lakshmi N | Method for forming solder contacts on mounted substrates |
US7923844B2 (en) | 2005-11-22 | 2011-04-12 | Shocking Technologies, Inc. | Semiconductor devices including voltage switchable materials for over-voltage protection |
US7307348B2 (en) * | 2005-12-07 | 2007-12-11 | Micron Technology, Inc. | Semiconductor components having through wire interconnects (TWI) |
US7649367B2 (en) * | 2005-12-07 | 2010-01-19 | Microprobe, Inc. | Low profile probe having improved mechanical scrub and reduced contact inductance |
US20070138644A1 (en) * | 2005-12-15 | 2007-06-21 | Tessera, Inc. | Structure and method of making capped chip having discrete article assembled into vertical interconnect |
US7365553B2 (en) * | 2005-12-22 | 2008-04-29 | Touchdown Technologies, Inc. | Probe card assembly |
US8058101B2 (en) | 2005-12-23 | 2011-11-15 | Tessera, Inc. | Microelectronic packages and methods therefor |
US20070152685A1 (en) * | 2006-01-03 | 2007-07-05 | Formfactor, Inc. | A probe array structure and a method of making a probe array structure |
US7936062B2 (en) | 2006-01-23 | 2011-05-03 | Tessera Technologies Ireland Limited | Wafer level chip packaging |
FR2896914B1 (fr) * | 2006-01-30 | 2008-07-04 | Valeo Electronique Sys Liaison | Module electronique et procede d'assemblage d'un tel module |
EP1991996A1 (en) * | 2006-03-07 | 2008-11-19 | X2Y Attenuators, L.L.C. | Energy conditioner structures |
US7312617B2 (en) | 2006-03-20 | 2007-12-25 | Microprobe, Inc. | Space transformers employing wire bonds for interconnections with fine pitch contacts |
US7659612B2 (en) | 2006-04-24 | 2010-02-09 | Micron Technology, Inc. | Semiconductor components having encapsulated through wire interconnects (TWI) |
US20090126903A1 (en) * | 2006-04-24 | 2009-05-21 | Sumitomo Electric Industries, Ltd. | Heat transfer member, convex structural member, electronic apparatus, and electric product |
US7444253B2 (en) * | 2006-05-09 | 2008-10-28 | Formfactor, Inc. | Air bridge structures and methods of making and using air bridge structures |
ATE495561T1 (de) * | 2006-05-23 | 2011-01-15 | Delphi Tech Inc | Elektronisches bauteil mit kontaktelementen |
US7403028B2 (en) | 2006-06-12 | 2008-07-22 | Cascade Microtech, Inc. | Test structure and probe for differential signals |
US7764072B2 (en) | 2006-06-12 | 2010-07-27 | Cascade Microtech, Inc. | Differential signal probing system |
US7723999B2 (en) | 2006-06-12 | 2010-05-25 | Cascade Microtech, Inc. | Calibration structures for differential signal probing |
US7723224B2 (en) * | 2006-06-14 | 2010-05-25 | Freescale Semiconductor, Inc. | Microelectronic assembly with back side metallization and method for forming the same |
US20080022522A1 (en) * | 2006-07-19 | 2008-01-31 | Lotes Co., Ltd. | Manufacturing method for electrical connector |
US7331797B1 (en) * | 2006-07-26 | 2008-02-19 | Lotes Co., Ltd. | Electrical connector and a manufacturing method thereof |
US7968010B2 (en) | 2006-07-29 | 2011-06-28 | Shocking Technologies, Inc. | Method for electroplating a substrate |
JP2010521058A (ja) | 2006-09-24 | 2010-06-17 | ショッキング テクノロジーズ,インコーポレイテッド | ステップ電圧応答を有する電圧切り換え可能な誘電体材料の組成及び該誘電体材料の製造方法 |
JPWO2008041484A1 (ja) * | 2006-09-26 | 2010-02-04 | アルプス電気株式会社 | 弾性接触子を用いた金属端子間の接合方法 |
US8907689B2 (en) | 2006-10-11 | 2014-12-09 | Microprobe, Inc. | Probe retention arrangement |
US7786740B2 (en) * | 2006-10-11 | 2010-08-31 | Astria Semiconductor Holdings, Inc. | Probe cards employing probes having retaining portions for potting in a potting region |
EP1930216A1 (en) * | 2006-12-07 | 2008-06-11 | Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO | Wire beam |
US8604605B2 (en) | 2007-01-05 | 2013-12-10 | Invensas Corp. | Microelectronic assembly with multi-layer support structure |
DE102007012500A1 (de) * | 2007-03-15 | 2008-09-18 | Continental Automotive Gmbh | Leiterplattenkontaktiervorrichtung |
US7675131B2 (en) * | 2007-04-05 | 2010-03-09 | Micron Technology, Inc. | Flip-chip image sensor packages and methods of fabricating the same |
US7514948B2 (en) | 2007-04-10 | 2009-04-07 | Microprobe, Inc. | Vertical probe array arranged to provide space transformation |
US8832936B2 (en) * | 2007-04-30 | 2014-09-16 | International Business Machines Corporation | Method of forming metallized elastomeric electrical contacts |
US7793236B2 (en) | 2007-06-13 | 2010-09-07 | Shocking Technologies, Inc. | System and method for including protective voltage switchable dielectric material in the design or simulation of substrate devices |
US7876114B2 (en) | 2007-08-08 | 2011-01-25 | Cascade Microtech, Inc. | Differential waveguide probe |
JP2009071156A (ja) * | 2007-09-14 | 2009-04-02 | Toshiba Corp | 半導体装置及びその製造方法 |
US7888955B2 (en) | 2007-09-25 | 2011-02-15 | Formfactor, Inc. | Method and apparatus for testing devices using serially controlled resources |
US7977959B2 (en) | 2007-09-27 | 2011-07-12 | Formfactor, Inc. | Method and apparatus for testing devices using serially controlled intelligent switches |
US20090091025A1 (en) * | 2007-10-04 | 2009-04-09 | Agency For Science, Technology And Research | Method for forming and releasing interconnects |
US7671610B2 (en) * | 2007-10-19 | 2010-03-02 | Microprobe, Inc. | Vertical guided probe array providing sideways scrub motion |
US8723546B2 (en) * | 2007-10-19 | 2014-05-13 | Microprobe, Inc. | Vertical guided layered probe |
US9147665B2 (en) * | 2007-11-06 | 2015-09-29 | Fairchild Semiconductor Corporation | High bond line thickness for semiconductor devices |
TWI389290B (zh) * | 2007-11-08 | 2013-03-11 | Ind Tech Res Inst | 晶片結構及其製程、晶片堆疊結構及其製程 |
JP4443598B2 (ja) * | 2007-11-26 | 2010-03-31 | シャープ株式会社 | 両面配線基板 |
TW200922009A (en) * | 2007-12-07 | 2009-05-16 | Jye Chuang Electronic Co Ltd | Contact terminal |
ATE481735T1 (de) * | 2007-12-27 | 2010-10-15 | Imec | Methode zur justage und zum bonding von teilen und ein bauteil aus justierten und gebondeten teilen |
FR2926435B1 (fr) * | 2008-01-10 | 2012-02-03 | Johnson Controls Tech Co | Carte electronique comportant une plaque de circuit imprime et un equipement porte par cette plaque. |
US8206614B2 (en) | 2008-01-18 | 2012-06-26 | Shocking Technologies, Inc. | Voltage switchable dielectric material having bonded particle constituents |
JP2009176947A (ja) * | 2008-01-24 | 2009-08-06 | Olympus Corp | 3次元モジュール |
US20090224793A1 (en) * | 2008-03-07 | 2009-09-10 | Formfactor, Inc. | Method And Apparatus For Designing A Custom Test System |
US8122309B2 (en) * | 2008-03-11 | 2012-02-21 | Formfactor, Inc. | Method and apparatus for processing failures during semiconductor device testing |
JP5194932B2 (ja) * | 2008-03-26 | 2013-05-08 | 富士通セミコンダクター株式会社 | 半導体装置および半導体装置の製造方法 |
US8203421B2 (en) | 2008-04-14 | 2012-06-19 | Shocking Technologies, Inc. | Substrate device or package using embedded layer of voltage switchable dielectric material in a vertical switching configuration |
DE102008023761B9 (de) * | 2008-05-09 | 2012-11-08 | Feinmetall Gmbh | Elektrisches Kontaktelement zum Berührungskontaktieren von elektrischen Prüflingen sowie entsprechende Kontaktieranordnung |
US8230593B2 (en) * | 2008-05-29 | 2012-07-31 | Microprobe, Inc. | Probe bonding method having improved control of bonding material |
US8963323B2 (en) * | 2008-06-20 | 2015-02-24 | Alcatel Lucent | Heat-transfer structure |
KR101004911B1 (ko) * | 2008-08-12 | 2010-12-28 | 삼성전기주식회사 | 마이크로 전자기계적 부품 제조방법 |
US8095841B2 (en) | 2008-08-19 | 2012-01-10 | Formfactor, Inc. | Method and apparatus for testing semiconductor devices with autonomous expected value generation |
TWI372250B (en) * | 2008-08-27 | 2012-09-11 | King Yuan Electronics Co Ltd | Probe card |
US7944225B2 (en) * | 2008-09-26 | 2011-05-17 | Formfactor, Inc. | Method and apparatus for providing a tester integrated circuit for testing a semiconductor device under test |
US9208931B2 (en) | 2008-09-30 | 2015-12-08 | Littelfuse, Inc. | Voltage switchable dielectric material containing conductor-on-conductor core shelled particles |
EP2342722A2 (en) | 2008-09-30 | 2011-07-13 | Shocking Technologies Inc | Voltage switchable dielectric material containing conductive core shelled particles |
US7888957B2 (en) | 2008-10-06 | 2011-02-15 | Cascade Microtech, Inc. | Probing apparatus with impedance optimized interface |
US8794322B2 (en) * | 2008-10-10 | 2014-08-05 | Halliburton Energy Services, Inc. | Additives to suppress silica scale build-up |
US7982305B1 (en) * | 2008-10-20 | 2011-07-19 | Maxim Integrated Products, Inc. | Integrated circuit package including a three-dimensional fan-out / fan-in signal routing |
US8362871B2 (en) | 2008-11-05 | 2013-01-29 | Shocking Technologies, Inc. | Geometric and electric field considerations for including transient protective material in substrate devices |
WO2010059247A2 (en) | 2008-11-21 | 2010-05-27 | Cascade Microtech, Inc. | Replaceable coupon for a probing apparatus |
US8399773B2 (en) | 2009-01-27 | 2013-03-19 | Shocking Technologies, Inc. | Substrates having voltage switchable dielectric materials |
US9226391B2 (en) | 2009-01-27 | 2015-12-29 | Littelfuse, Inc. | Substrates having voltage switchable dielectric materials |
US8272123B2 (en) | 2009-01-27 | 2012-09-25 | Shocking Technologies, Inc. | Substrates having voltage switchable dielectric materials |
US8073019B2 (en) * | 2009-03-02 | 2011-12-06 | Jian Liu | 810 nm ultra-short pulsed fiber laser |
KR101890825B1 (ko) * | 2009-03-10 | 2018-08-22 | 존스테크 인터내셔널 코포레이션 | 마이크로 회로 테스터를 위한 전기 전도성 핀 |
US8968606B2 (en) | 2009-03-26 | 2015-03-03 | Littelfuse, Inc. | Components having voltage switchable dielectric materials |
JP5062283B2 (ja) * | 2009-04-30 | 2012-10-31 | 日亜化学工業株式会社 | 半導体装置及びその製造方法 |
US8531042B2 (en) * | 2009-06-30 | 2013-09-10 | Oracle America, Inc. | Technique for fabricating microsprings on non-planar surfaces |
US8436251B2 (en) * | 2009-07-08 | 2013-05-07 | Medtronic, Inc. | Ribbon connecting electrical components |
US9053844B2 (en) | 2009-09-09 | 2015-06-09 | Littelfuse, Inc. | Geometric configuration or alignment of protective material in a gap structure for electrical devices |
CN104321860B (zh) * | 2009-09-17 | 2017-06-06 | 皇家飞利浦电子股份有限公司 | 电子器件中易碎无机层处的接触部位的几何结构 |
JP5706437B2 (ja) | 2009-11-12 | 2015-04-22 | ダウ グローバル テクノロジーズ エルエルシー | ポリオキサゾリドン樹脂 |
JP5488024B2 (ja) * | 2010-02-17 | 2014-05-14 | ミツミ電機株式会社 | Acアダプタ |
US9082622B2 (en) | 2010-02-26 | 2015-07-14 | Littelfuse, Inc. | Circuit elements comprising ferroic materials |
US9320135B2 (en) | 2010-02-26 | 2016-04-19 | Littelfuse, Inc. | Electric discharge protection for surface mounted and embedded components |
US9224728B2 (en) | 2010-02-26 | 2015-12-29 | Littelfuse, Inc. | Embedded protection against spurious electrical events |
US8215966B2 (en) * | 2010-04-20 | 2012-07-10 | Tyco Electronics Corporation | Interposer connector assembly |
US8407888B2 (en) | 2010-05-07 | 2013-04-02 | Oracle International Corporation | Method of assembling a circuit board assembly |
JP2011258364A (ja) * | 2010-06-08 | 2011-12-22 | Shinko Electric Ind Co Ltd | ソケット |
US8172615B2 (en) | 2010-06-30 | 2012-05-08 | Tyco Electronics Corporation | Electrical connector for an electronic module |
US8167644B2 (en) | 2010-06-30 | 2012-05-01 | Tyco Electronics Corporation | Electrical connector for an electronic module |
US8482111B2 (en) | 2010-07-19 | 2013-07-09 | Tessera, Inc. | Stackable molded microelectronic packages |
US9159708B2 (en) | 2010-07-19 | 2015-10-13 | Tessera, Inc. | Stackable molded microelectronic packages with area array unit connectors |
JP5713598B2 (ja) | 2010-07-20 | 2015-05-07 | 新光電気工業株式会社 | ソケット及びその製造方法 |
US8274798B2 (en) * | 2010-07-28 | 2012-09-25 | Unimicron Technology Corp. | Carrier substrate and method for making the same |
JP5788166B2 (ja) | 2010-11-02 | 2015-09-30 | 新光電気工業株式会社 | 接続端子構造及びその製造方法、並びにソケット |
US8191246B1 (en) * | 2010-11-11 | 2012-06-05 | Qi Luo | Method of manufacturing a plurality of miniaturized spring contacts |
KR101075241B1 (ko) | 2010-11-15 | 2011-11-01 | 테세라, 인코포레이티드 | 유전체 부재에 단자를 구비하는 마이크로전자 패키지 |
US20120146206A1 (en) | 2010-12-13 | 2012-06-14 | Tessera Research Llc | Pin attachment |
US20120208379A1 (en) * | 2011-02-14 | 2012-08-16 | Chicony Power Technology Co., Ltd. | Ac inlet |
US9702904B2 (en) * | 2011-03-21 | 2017-07-11 | Formfactor, Inc. | Non-linear vertical leaf spring |
KR101128063B1 (ko) | 2011-05-03 | 2012-04-23 | 테세라, 인코포레이티드 | 캡슐화 층의 표면에 와이어 본드를 구비하는 패키지 적층형 어셈블리 |
US8404520B1 (en) | 2011-10-17 | 2013-03-26 | Invensas Corporation | Package-on-package assembly with wire bond vias |
JP2013101043A (ja) * | 2011-11-08 | 2013-05-23 | Renesas Electronics Corp | 半導体装置の製造方法 |
WO2013070201A1 (en) | 2011-11-09 | 2013-05-16 | Advantest America, Inc. | Fine pitch microelectronic contact array and method of making same |
TWI453425B (zh) | 2012-09-07 | 2014-09-21 | Mjc Probe Inc | 晶片電性偵測裝置及其形成方法 |
US8946757B2 (en) | 2012-02-17 | 2015-02-03 | Invensas Corporation | Heat spreading substrate with embedded interconnects |
US8372741B1 (en) | 2012-02-24 | 2013-02-12 | Invensas Corporation | Method for package-on-package assembly with wire bonds to encapsulation surface |
US9349706B2 (en) | 2012-02-24 | 2016-05-24 | Invensas Corporation | Method for package-on-package assembly with wire bonds to encapsulation surface |
US9082763B2 (en) * | 2012-03-15 | 2015-07-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Joint structure for substrates and methods of forming |
US8835228B2 (en) | 2012-05-22 | 2014-09-16 | Invensas Corporation | Substrate-less stackable package with wire-bond interconnect |
US8902605B2 (en) * | 2012-06-13 | 2014-12-02 | International Business Machines Corporation | Adapter for plated through hole mounting of surface mount component |
US9391008B2 (en) | 2012-07-31 | 2016-07-12 | Invensas Corporation | Reconstituted wafer-level package DRAM |
US9502390B2 (en) | 2012-08-03 | 2016-11-22 | Invensas Corporation | BVA interposer |
US8927877B2 (en) * | 2012-08-08 | 2015-01-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Looped interconnect structure |
US9338895B2 (en) * | 2012-10-17 | 2016-05-10 | Microelectronics Assembly Technologies | Method for making an electrical circuit |
US8902606B2 (en) * | 2012-10-17 | 2014-12-02 | Microelectronics Assembly Technologies | Electronic interconnect system |
US20140104776A1 (en) * | 2012-10-17 | 2014-04-17 | James E. Clayton | Rigid circuit board with flexibly attached module |
US8975738B2 (en) | 2012-11-12 | 2015-03-10 | Invensas Corporation | Structure for microelectronic packaging with terminals on dielectric mass |
US8878353B2 (en) | 2012-12-20 | 2014-11-04 | Invensas Corporation | Structure for microelectronic packaging with bond elements to encapsulation surface |
US9202782B2 (en) * | 2013-01-07 | 2015-12-01 | Intel Corporation | Embedded package in PCB build up |
US9136254B2 (en) | 2013-02-01 | 2015-09-15 | Invensas Corporation | Microelectronic package having wire bond vias and stiffening layer |
JP6161918B2 (ja) * | 2013-02-25 | 2017-07-12 | 新光電気工業株式会社 | 半導体装置 |
US9167710B2 (en) | 2013-08-07 | 2015-10-20 | Invensas Corporation | Embedded packaging with preformed vias |
US9685365B2 (en) | 2013-08-08 | 2017-06-20 | Invensas Corporation | Method of forming a wire bond having a free end |
US20150076714A1 (en) | 2013-09-16 | 2015-03-19 | Invensas Corporation | Microelectronic element with bond elements to encapsulation surface |
EP2854170B1 (en) | 2013-09-27 | 2022-01-26 | Alcatel Lucent | A structure for a heat transfer interface and method of manufacturing the same |
US9810714B2 (en) * | 2013-11-07 | 2017-11-07 | Heraeus Deutschland GmbH & Co. KG | Probe pin and method for producing a probe pin |
US9583456B2 (en) | 2013-11-22 | 2017-02-28 | Invensas Corporation | Multiple bond via arrays of different wire heights on a same substrate |
US9379074B2 (en) | 2013-11-22 | 2016-06-28 | Invensas Corporation | Die stacks with one or more bond via arrays of wire bond wires and with one or more arrays of bump interconnects |
US9263394B2 (en) | 2013-11-22 | 2016-02-16 | Invensas Corporation | Multiple bond via arrays of different wire heights on a same substrate |
US9196577B2 (en) | 2014-01-09 | 2015-11-24 | Infineon Technologies Ag | Semiconductor packaging arrangement |
US9583411B2 (en) | 2014-01-17 | 2017-02-28 | Invensas Corporation | Fine pitch BVA using reconstituted wafer with area array accessible for testing |
TWI587412B (zh) * | 2014-05-08 | 2017-06-11 | 矽品精密工業股份有限公司 | 封裝結構及其製法 |
US10381326B2 (en) | 2014-05-28 | 2019-08-13 | Invensas Corporation | Structure and method for integrated circuits packaging with increased density |
US9646917B2 (en) | 2014-05-29 | 2017-05-09 | Invensas Corporation | Low CTE component with wire bond interconnects |
US9412714B2 (en) | 2014-05-30 | 2016-08-09 | Invensas Corporation | Wire bond support structure and microelectronic package including wire bonds therefrom |
GB2529678B (en) * | 2014-08-28 | 2017-01-25 | Cambium Networks Ltd | Radio frequency connection arrangement |
US9735084B2 (en) | 2014-12-11 | 2017-08-15 | Invensas Corporation | Bond via array for thermal conductivity |
US10679866B2 (en) | 2015-02-13 | 2020-06-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Interconnect structure for semiconductor package and method of fabricating the interconnect structure |
US9888579B2 (en) | 2015-03-05 | 2018-02-06 | Invensas Corporation | Pressing of wire bond wire tips to provide bent-over tips |
US9668344B2 (en) * | 2015-04-23 | 2017-05-30 | SK Hynix Inc. | Semiconductor packages having interconnection members |
US9502372B1 (en) | 2015-04-30 | 2016-11-22 | Invensas Corporation | Wafer-level packaging using wire bond wires in place of a redistribution layer |
US9761554B2 (en) | 2015-05-07 | 2017-09-12 | Invensas Corporation | Ball bonding metal wire bond wires to metal pads |
US10685943B2 (en) * | 2015-05-14 | 2020-06-16 | Mediatek Inc. | Semiconductor chip package with resilient conductive paste post and fabrication method thereof |
US9490222B1 (en) | 2015-10-12 | 2016-11-08 | Invensas Corporation | Wire bond wires for interference shielding |
US10490528B2 (en) | 2015-10-12 | 2019-11-26 | Invensas Corporation | Embedded wire bond wires |
US10332854B2 (en) | 2015-10-23 | 2019-06-25 | Invensas Corporation | Anchoring structure of fine pitch bva |
US10181457B2 (en) | 2015-10-26 | 2019-01-15 | Invensas Corporation | Microelectronic package for wafer-level chip scale packaging with fan-out |
US10043779B2 (en) | 2015-11-17 | 2018-08-07 | Invensas Corporation | Packaged microelectronic device for a package-on-package device |
US9659848B1 (en) | 2015-11-18 | 2017-05-23 | Invensas Corporation | Stiffened wires for offset BVA |
CN105467176A (zh) * | 2015-12-10 | 2016-04-06 | 苏州世纪福智能装备股份有限公司 | 双层浮动式高密度连接器 |
US9984992B2 (en) | 2015-12-30 | 2018-05-29 | Invensas Corporation | Embedded wire bond wires for vertical integration with separate surface mount and wire bond mounting surfaces |
US10104773B2 (en) * | 2016-01-27 | 2018-10-16 | Northrop Grumman Systems Corporation | Resilient micro lattice electrical interconnection assembly |
CN105719978B (zh) * | 2016-05-09 | 2018-12-04 | 中芯长电半导体(江阴)有限公司 | 一种近间距铜针封装结构及其制备方法 |
US10643965B2 (en) * | 2016-05-25 | 2020-05-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method of forming a joint assembly |
US10120020B2 (en) | 2016-06-16 | 2018-11-06 | Formfactor Beaverton, Inc. | Probe head assemblies and probe systems for testing integrated circuit devices |
US10299368B2 (en) | 2016-12-21 | 2019-05-21 | Invensas Corporation | Surface integrated waveguides and circuit structures therefor |
JP6387426B2 (ja) * | 2017-01-25 | 2018-09-05 | 日鉄住金マイクロメタル株式会社 | ボンディングワイヤ |
CN106852021A (zh) * | 2017-04-03 | 2017-06-13 | 东莞市仪锐电子有限公司 | 一种pcb电路板焊片脉冲热压机 |
US11489038B2 (en) * | 2017-08-29 | 2022-11-01 | Micron Technology, Inc. | Capacitors having vertical contacts extending through conductive tiers |
CN112904057B (zh) * | 2018-01-11 | 2022-06-07 | 欧姆龙株式会社 | 探针、检查工具、检查单元和检查装置 |
CN109300859B (zh) * | 2018-09-18 | 2020-08-28 | 苏州施密科微电子设备有限公司 | 一种半导体芯片封装框架 |
US11973301B2 (en) | 2018-09-26 | 2024-04-30 | Microfabrica Inc. | Probes having improved mechanical and/or electrical properties for making contact between electronic circuit elements and methods for making |
US11262383B1 (en) | 2018-09-26 | 2022-03-01 | Microfabrica Inc. | Probes having improved mechanical and/or electrical properties for making contact between electronic circuit elements and methods for making |
CN109046495A (zh) * | 2018-10-17 | 2018-12-21 | 皖南医学院 | 一种实验器皿的摆放盒 |
DE102018220089A1 (de) * | 2018-11-22 | 2020-05-28 | Infineon Technologies Ag | Digitale Vorverzerrungstechnik für eine Schaltungsanordnung mit einem Leistungsverstärker |
WO2020167603A1 (en) | 2019-02-11 | 2020-08-20 | Interplex Industries, Inc. | Multi-part contact |
US11768227B1 (en) | 2019-02-22 | 2023-09-26 | Microfabrica Inc. | Multi-layer probes having longitudinal axes and preferential probe bending axes that lie in planes that are nominally parallel to planes of probe layers |
CN111786159B (zh) * | 2019-04-03 | 2022-02-11 | 高天星 | 传导装置 |
TWI706139B (zh) * | 2019-10-25 | 2020-10-01 | 巨擘科技股份有限公司 | 金屬探針結構及其製造方法 |
US11761982B1 (en) | 2019-12-31 | 2023-09-19 | Microfabrica Inc. | Probes with planar unbiased spring elements for electronic component contact and methods for making such probes |
US11867721B1 (en) | 2019-12-31 | 2024-01-09 | Microfabrica Inc. | Probes with multiple springs, methods for making, and methods for using |
JP2021174864A (ja) * | 2020-04-24 | 2021-11-01 | 株式会社村田製作所 | 積層セラミックコンデンサ |
US11850676B2 (en) * | 2020-06-03 | 2023-12-26 | Kulicke And Soffa Industries, Inc. | Ultrasonic welding systems, methods of using the same, and related workpieces including welded conductive pins |
US11774467B1 (en) | 2020-09-01 | 2023-10-03 | Microfabrica Inc. | Method of in situ modulation of structural material properties and/or template shape |
CN113451791B (zh) * | 2021-05-22 | 2024-01-05 | 深圳市越疆科技股份有限公司 | 检测电路板与电极的连接结构、电子皮肤、外壳及机械臂 |
Family Cites Families (481)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3302067A (en) | 1967-01-31 | Modular circuit package utilizing solder coated | ||
US3258736A (en) | 1966-06-28 | Electrical connector | ||
US2432275A (en) * | 1943-02-01 | 1947-12-09 | Hazeltine Research Inc | Coupling device |
DE1026876B (de) | 1953-06-17 | 1958-03-27 | Telefunken Gmbh | Verfahren zur Herstellung von p-n-UEbergaengen bestimmter Sperrschichtgroesse |
US2869040A (en) * | 1954-01-11 | 1959-01-13 | Sylvania Electric Prod | Solder-dipped stamped wiring |
US2923859A (en) | 1955-07-20 | 1960-02-02 | Philco Corp | Manufacture of electrical appliances with printed wiring panels |
US3087239A (en) * | 1959-06-19 | 1963-04-30 | Western Electric Co | Methods of bonding leads to semiconductive devices |
US3075282A (en) | 1959-07-24 | 1963-01-29 | Bell Telephone Labor Inc | Semiconductor device contact |
US3202489A (en) | 1959-12-01 | 1965-08-24 | Hughes Aircraft Co | Gold-aluminum alloy bond electrode attachment |
US3070650A (en) | 1960-09-23 | 1962-12-25 | Sanders Associates Inc | Solder connection for electrical circuits |
US3047683A (en) | 1961-03-22 | 1962-07-31 | Jr Bernard Edward Shlesinger | Multiple contact switch |
US3217213A (en) * | 1961-06-02 | 1965-11-09 | Slater Electric Inc | Semiconductor diode construction with heat dissipating housing |
US3274456A (en) * | 1962-11-21 | 1966-09-20 | Gen Instrument Corp | Rectifier assembly and method of making same |
US3281751A (en) | 1963-08-30 | 1966-10-25 | Raymond H Blair | Spring connector for printed circuit board |
US3296692A (en) | 1963-09-13 | 1967-01-10 | Bell Telephone Labor Inc | Thermocompression wire attachments to quartz crystals |
US3286340A (en) | 1964-02-28 | 1966-11-22 | Philco Corp | Fabrication of semiconductor units |
DE1514304A1 (de) | 1964-04-03 | 1969-05-14 | Philco Ford Corp | Halbleiteranordnung und Herstellungsverfahren hierfuer |
US3344228A (en) | 1964-11-19 | 1967-09-26 | Thermal barriers for electric cables | |
US3336433A (en) * | 1965-02-11 | 1967-08-15 | Texas Instruments Inc | Electronic package |
US3429040A (en) | 1965-06-18 | 1969-02-25 | Ibm | Method of joining a component to a substrate |
US3373481A (en) * | 1965-06-22 | 1968-03-19 | Sperry Rand Corp | Method of electrically interconnecting conductors |
FR1483574A (ko) | 1965-06-24 | 1967-09-06 | ||
US3368114A (en) | 1965-07-06 | 1968-02-06 | Radiation Inc | Microelectronic circuit packages with improved connection structure |
US3467765A (en) | 1965-10-04 | 1969-09-16 | Contemporary Research Inc | Solder composition |
GB1100697A (en) * | 1965-11-22 | 1968-01-24 | Matsushita Electronics Corp | Alternator semiconductor diode and rectifying circuit assembly |
US3445770A (en) * | 1965-12-27 | 1969-05-20 | Philco Ford Corp | Microelectronic test probe with defect marker access |
US3614832A (en) | 1966-03-09 | 1971-10-26 | Ibm | Decal connectors and methods of forming decal connections to solid state devices |
US3390308A (en) | 1966-03-31 | 1968-06-25 | Itt | Multiple chip integrated circuit assembly |
US3397451A (en) | 1966-04-06 | 1968-08-20 | Western Electric Co | Sequential wire and articlebonding methods |
US3426252A (en) | 1966-05-03 | 1969-02-04 | Bell Telephone Labor Inc | Semiconductive device including beam leads |
US3517438A (en) | 1966-05-12 | 1970-06-30 | Ibm | Method of packaging a circuit module and joining same to a circuit substrate |
DE1539692A1 (de) | 1966-06-23 | 1969-10-16 | Blume & Redecker Gmbh | Umklebevorrichtung fuer Spulen |
NL6613526A (ko) | 1966-09-26 | 1968-03-27 | ||
US3460238A (en) * | 1967-04-20 | 1969-08-12 | Motorola Inc | Wire severing in wire bonding machines |
US3474297A (en) | 1967-06-30 | 1969-10-21 | Texas Instruments Inc | Interconnection system for complex semiconductor arrays |
US3573617A (en) * | 1967-10-27 | 1971-04-06 | Aai Corp | Method and apparatus for testing packaged integrated circuits |
US3495170A (en) | 1967-11-24 | 1970-02-10 | James R Biard | Method for the indirect measurement of resistivities and impurity concentrations in a semiconductor body including an epitaxial film |
US3689991A (en) | 1968-03-01 | 1972-09-12 | Gen Electric | A method of manufacturing a semiconductor device utilizing a flexible carrier |
US3519890A (en) * | 1968-04-01 | 1970-07-07 | North American Rockwell | Low stress lead |
US3509270A (en) * | 1968-04-08 | 1970-04-28 | Ney Co J M | Interconnection for printed circuits and method of making same |
US3567846A (en) | 1968-05-31 | 1971-03-02 | Gen Cable Corp | Metallic sheathed cables with roam cellular polyolefin insulation and method of making |
US3553499A (en) * | 1968-07-17 | 1971-01-05 | Sperry Rand Corp | Fast-acting avalanche mode transistor switch |
US3590480A (en) | 1968-10-03 | 1971-07-06 | Theodore H Johnson Jr | Method of manufacturing a pulse transformer package |
US3550645A (en) | 1968-10-03 | 1970-12-29 | Photocircuits Corp | Wire wound armature,method and apparatus for making same |
US3555477A (en) | 1969-01-21 | 1971-01-12 | Standard Int Corp | Electrical inductor and method of making the same |
US3673681A (en) | 1969-04-01 | 1972-07-04 | Inforex | Electrical circuit board wiring |
US3623649A (en) | 1969-06-09 | 1971-11-30 | Gen Motors Corp | Wedge bonding tool for the attachment of semiconductor leads |
US3680206A (en) | 1969-06-23 | 1972-08-01 | Ferranti Ltd | Assemblies of semiconductor devices having mounting pillars as circuit connections |
US3871015A (en) | 1969-08-14 | 1975-03-11 | Ibm | Flip chip module with non-uniform connector joints |
US3871014A (en) | 1969-08-14 | 1975-03-11 | Ibm | Flip chip module with non-uniform solder wettable areas on the substrate |
US3591839A (en) | 1969-08-27 | 1971-07-06 | Siliconix Inc | Micro-electronic circuit with novel hermetic sealing structure and method of manufacture |
US3569610A (en) | 1969-10-15 | 1971-03-09 | Gen Cable Corp | Ethylene-propylene rubber insulated cable with cross-linked polyethylene strand shielding |
JPS4919634B1 (ko) | 1969-12-29 | 1974-05-18 | ||
US3627124A (en) | 1970-01-29 | 1971-12-14 | Western Electric Co | Method for separating selected articles from an array |
US3616532A (en) | 1970-02-02 | 1971-11-02 | Sperry Rand Corp | Multilayer printed circuit electrical interconnection device |
US3662454A (en) * | 1970-03-18 | 1972-05-16 | Rca Corp | Method of bonding metals together |
DE2119567C2 (de) | 1970-05-05 | 1983-07-14 | International Computers Ltd., London | Elektrische Verbindungsvorrichtung und Verfahren zu ihrer Herstellung |
US3683105A (en) | 1970-10-13 | 1972-08-08 | Westinghouse Electric Corp | Microcircuit modular package |
US3680037A (en) | 1970-11-05 | 1972-07-25 | Tech Wire Prod Inc | Electrical interconnector |
US3844909A (en) | 1970-11-12 | 1974-10-29 | Gen Electric | Magnetic film plated wire and substrates therefor |
US3753665A (en) | 1970-11-12 | 1973-08-21 | Gen Electric | Magnetic film plated wire |
US3864728A (en) | 1970-11-20 | 1975-02-04 | Siemens Ag | Semiconductor components having bimetallic lead connected thereto |
DE2104207C3 (de) * | 1971-01-29 | 1974-04-11 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum Verbinden eines Kontaktierungsdrahtes |
US3724068A (en) | 1971-02-25 | 1973-04-03 | Du Pont | Semiconductor chip packaging apparatus and method |
US3772575A (en) | 1971-04-28 | 1973-11-13 | Rca Corp | High heat dissipation solder-reflow flip chip transistor |
US3832769A (en) | 1971-05-26 | 1974-09-03 | Minnesota Mining & Mfg | Circuitry and method |
US3611061A (en) | 1971-07-07 | 1971-10-05 | Motorola Inc | Multiple lead integrated circuit device and frame member for the fabrication thereof |
GB1387587A (en) | 1971-07-22 | 1975-03-19 | Plessey Co Ltd | Electrical interconnectors and connector assemblies |
US3917900A (en) | 1971-07-26 | 1975-11-04 | Anaconda Co | Electric cable with expanded-metal shield and method of making |
US3846823A (en) * | 1971-08-05 | 1974-11-05 | Lucerne Products Inc | Semiconductor assembly |
US3747198A (en) * | 1971-08-19 | 1973-07-24 | Gen Electric | Tailless wedge bonding of gold wire to palladium-silver cermets |
US3832632A (en) | 1971-11-22 | 1974-08-27 | F Ardezzone | Multi-point probe head assembly |
US3719981A (en) | 1971-11-24 | 1973-03-13 | Rca Corp | Method of joining solder balls to solder bumps |
CA954635A (en) | 1972-06-06 | 1974-09-10 | Microsystems International Limited | Mounting leads and method of fabrication |
DE2228703A1 (de) | 1972-06-13 | 1974-01-10 | Licentia Gmbh | Verfahren zum herstellen einer vorgegebenen lotschichtstaerke bei der fertigung von halbleiterbauelementen |
DE2232794B1 (de) | 1972-07-04 | 1973-01-25 | Matsuo Electric Co., Ltd., Toyonaka, Osaka (Japan) | Plättchenförmiges elektronisches Bauelement |
US3939559A (en) | 1972-10-03 | 1976-02-24 | Western Electric Company, Inc. | Methods of solid-phase bonding mating members through an interposed pre-shaped compliant medium |
US3811186A (en) | 1972-12-11 | 1974-05-21 | Ibm | Method of aligning and attaching circuit devices on a substrate |
US3842189A (en) * | 1973-01-08 | 1974-10-15 | Rca Corp | Contact array and method of making the same |
US3861135A (en) | 1973-02-08 | 1975-01-21 | Chomerics Inc | Electrical interconnector and method of making |
US3795884A (en) | 1973-03-06 | 1974-03-05 | Amp Inc | Electrical connector formed from coil spring |
US3862791A (en) | 1973-06-13 | 1975-01-28 | Northern Electric Co | Terminal pin block and method of making it |
US3839727A (en) | 1973-06-25 | 1974-10-01 | Ibm | Semiconductor chip to substrate solder bond using a locally dispersed, ternary intermetallic compound |
US3849728A (en) * | 1973-08-21 | 1974-11-19 | Wentworth Labor Inc | Fixed point probe card and an assembly and repair fixture therefor |
US3873173A (en) | 1973-10-05 | 1975-03-25 | Itt | Electrical connector assembly |
US3868724A (en) | 1973-11-21 | 1975-02-25 | Fairchild Camera Instr Co | Multi-layer connecting structures for packaging semiconductor devices mounted on a flexible carrier |
US3877064A (en) | 1974-02-22 | 1975-04-08 | Amp Inc | Device for connecting leadless integrated circuit packages to a printed-circuit board |
US3926360A (en) | 1974-05-28 | 1975-12-16 | Burroughs Corp | Method of attaching a flexible printed circuit board to a rigid printed circuit board |
US3921285A (en) | 1974-07-15 | 1975-11-25 | Ibm | Method for joining microminiature components to a carrying structure |
US3904262A (en) | 1974-09-27 | 1975-09-09 | John M Cutchaw | Connector for leadless integrated circuit packages |
US4074342A (en) | 1974-12-20 | 1978-02-14 | International Business Machines Corporation | Electrical package for lsi devices and assembly process therefor |
US4009485A (en) | 1974-12-23 | 1977-02-22 | General Electric Company | Semiconductor pellet assembly mounted on ceramic substrate |
US3982320A (en) | 1975-02-05 | 1976-09-28 | Technical Wire Products, Inc. | Method of making electrically conductive connector |
US3984166A (en) | 1975-05-07 | 1976-10-05 | Burroughs Corporation | Semiconductor device package having lead frame structure with integral spring contacts |
US3991463A (en) | 1975-05-19 | 1976-11-16 | Chomerics, Inc. | Method of forming an interconnector |
US4189825A (en) | 1975-06-04 | 1980-02-26 | Raytheon Company | Integrated test and assembly device |
US4003621A (en) | 1975-06-16 | 1977-01-18 | Technical Wire Products, Inc. | Electrical connector employing conductive rectilinear elements |
US3990689A (en) | 1975-08-11 | 1976-11-09 | Eklund Sr Ralph H | Adjustable holder assembly for positioning a vacuum chuck |
US3982811A (en) * | 1975-09-22 | 1976-09-28 | Rockwell International Corporation | Electrical terminal |
DE2608250C3 (de) | 1976-02-28 | 1985-06-05 | Telefunken electronic GmbH, 7100 Heilbronn | Verfahren zum Thermokompressions-Verbinden von auf Halbleiterkörpern befindlichen Metall-Anschlußkontakten mit zugeordneten Gehäuseanschlußteilen und Vorrichtung zur Durchführung des Verfahrens |
US4080722A (en) | 1976-03-22 | 1978-03-28 | Rca Corporation | Method of manufacturing semiconductor devices having a copper heat capacitor and/or copper heat sink |
US4047780A (en) * | 1976-04-07 | 1977-09-13 | Cedrone Nicholas J | Test contactor system for semiconductor device handling apparatus |
DE2617465C3 (de) | 1976-04-21 | 1978-10-19 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Elektrische Spule und Verfahren zu ihrer Herstellung |
US4085502A (en) * | 1977-04-12 | 1978-04-25 | Advanced Circuit Technology, Inc. | Jumper cable |
US4034468A (en) | 1976-09-03 | 1977-07-12 | Ibm Corporation | Method for making conduction-cooled circuit package |
US4067104A (en) | 1977-02-24 | 1978-01-10 | Rockwell International Corporation | Method of fabricating an array of flexible metallic interconnects for coupling microelectronics components |
US4246595A (en) | 1977-03-08 | 1981-01-20 | Matsushita Electric Industrial Co., Ltd. | Electronics circuit device and method of making the same |
US4125308A (en) * | 1977-05-26 | 1978-11-14 | Emc Technology, Inc. | Transitional RF connector |
JPS53149763A (en) | 1977-06-01 | 1978-12-27 | Citizen Watch Co Ltd | Mounting method of semiconductor integrate circuit |
US4139936A (en) | 1977-07-05 | 1979-02-20 | Hughes Aircraft Company | Method of making hermetic coaxial cable |
US4161692A (en) | 1977-07-18 | 1979-07-17 | Cerprobe Corporation | Probe device for integrated circuit wafers |
US4312117A (en) | 1977-09-01 | 1982-01-26 | Raytheon Company | Integrated test and assembly device |
EP0002166A3 (fr) * | 1977-11-18 | 1979-08-08 | International Business Machines Corporation | Support pour microplaquettes de circuits intégrés, et son procédé de fabrication |
US4155615A (en) | 1978-01-24 | 1979-05-22 | Amp Incorporated | Multi-contact connector for ceramic substrate packages and the like |
US4179802A (en) | 1978-03-27 | 1979-12-25 | International Business Machines Corporation | Studded chip attachment process |
JPS54146581A (en) | 1978-05-09 | 1979-11-15 | Mitsubishi Electric Corp | Electric chracteristic measuring device for semiconductor chip |
US4326663A (en) | 1978-07-20 | 1982-04-27 | Eltec Instruments, Inc. | Pyroelectric detector |
JPS5555985U (ko) | 1978-10-12 | 1980-04-16 | ||
US4225900A (en) | 1978-10-25 | 1980-09-30 | Raytheon Company | Integrated circuit device package interconnect means |
US4216350A (en) | 1978-11-01 | 1980-08-05 | Burroughs Corporation | Multiple solder pre-form with non-fusible web |
US4231154A (en) | 1979-01-10 | 1980-11-04 | International Business Machines Corporation | Electronic package assembly method |
US4195193A (en) | 1979-02-23 | 1980-03-25 | Amp Incorporated | Lead frame and chip carrier housing |
US4278311A (en) | 1979-04-06 | 1981-07-14 | Amp Incorporated | Surface to surface connector |
JPS568081U (ko) | 1979-06-29 | 1981-01-23 | ||
JPS5626446A (en) | 1979-08-09 | 1981-03-14 | Nec Corp | Semiconductor device |
US4272140A (en) | 1979-12-19 | 1981-06-09 | Gte Automatic Electric Laboratories Incorporated | Arrangement for mounting dual-in-line packaged integrated circuits to thick/thin film circuits |
US4332341A (en) * | 1979-12-26 | 1982-06-01 | Bell Telephone Laboratories, Incorporated | Fabrication of circuit packages using solid phase solder bonding |
US4322778A (en) | 1980-01-25 | 1982-03-30 | International Business Machines Corp. | High performance semiconductor package assembly |
SU1003396A1 (ru) | 1980-02-08 | 1983-03-07 | Институт коллоидной химии и химии воды АН УССР | Электрический соединитель |
JPS56116282A (en) | 1980-02-19 | 1981-09-11 | Sharp Kk | Electronic part with plural terminals |
US4417392A (en) | 1980-05-15 | 1983-11-29 | Cts Corporation | Process of making multi-layer ceramic package |
US4523144A (en) | 1980-05-27 | 1985-06-11 | Japan Electronic Materials Corp. | Complex probe card for testing a semiconductor wafer |
JPS5728337A (en) * | 1980-07-28 | 1982-02-16 | Hitachi Ltd | Connecting constructin of semiconductor element |
US4374457A (en) | 1980-08-04 | 1983-02-22 | Wiech Raymond E Jr | Method of fabricating complex micro-circuit boards and substrates |
US4472762A (en) | 1980-09-25 | 1984-09-18 | Texas Instruments Incorporated | Electronic circuit interconnection system |
US4385202A (en) | 1980-09-25 | 1983-05-24 | Texas Instruments Incorporated | Electronic circuit interconnection system |
US4546406A (en) | 1980-09-25 | 1985-10-08 | Texas Instruments Incorporated | Electronic circuit interconnection system |
US4396935A (en) | 1980-10-06 | 1983-08-02 | Ncr Corporation | VLSI Packaging system |
US4418857A (en) * | 1980-12-31 | 1983-12-06 | International Business Machines Corp. | High melting point process for Au:Sn:80:20 brazing alloy for chip carriers |
US4422568A (en) | 1981-01-12 | 1983-12-27 | Kulicke And Soffa Industries, Inc. | Method of making constant bonding wire tail lengths |
FR2498814B1 (fr) | 1981-01-26 | 1985-12-20 | Burroughs Corp | Boitier pour circuit integre, moyen pour le montage et procede de fabrication |
US4385341A (en) * | 1981-03-19 | 1983-05-24 | Northern Telecom Limited | Strain relief member for flat flexible cables |
NL184184C (nl) | 1981-03-20 | 1989-05-01 | Philips Nv | Werkwijze voor het aanbrengen van kontaktverhogingen op kontaktplaatsen van een electronische microketen. |
US4408218A (en) | 1981-03-27 | 1983-10-04 | Amp Incorporated | Ceramic chip carrier with lead frame having removable rim |
US4407007A (en) | 1981-05-28 | 1983-09-27 | International Business Machines Corporation | Process and structure for minimizing delamination in the fabrication of multi-layer ceramic substrate |
US4410905A (en) | 1981-08-14 | 1983-10-18 | Amp Incorporated | Power, ground and decoupling structure for chip carriers |
US4419818A (en) | 1981-10-26 | 1983-12-13 | Amp Incorporated | Method for manufacturing substrate with selectively trimmable resistors between signal leads and ground structure |
US4402450A (en) | 1981-08-21 | 1983-09-06 | Western Electric Company, Inc. | Adapting contacts for connection thereto |
JPS5842262A (ja) | 1981-09-07 | 1983-03-11 | Toshiba Corp | 混成集積回路のリ−ド線接続方法 |
DE3280233D1 (de) | 1981-09-11 | 1990-10-04 | Toshiba Kawasaki Kk | Verfahren zum herstellen eines substrats fuer multischichtschaltung. |
US4447857A (en) | 1981-12-09 | 1984-05-08 | International Business Machines Corporation | Substrate with multiple type connections |
EP0082902B1 (fr) | 1981-12-29 | 1985-11-27 | International Business Machines Corporation | Procédé pour souder les broches aux oeillets des conducteurs formés sur un substrat céramique |
US4453176A (en) | 1981-12-31 | 1984-06-05 | International Business Machines Corporation | LSI Chip carrier with buried repairable capacitor with low inductance leads |
US4514750A (en) | 1982-01-11 | 1985-04-30 | Texas Instruments Incorporated | Integrated circuit package having interconnected leads adjacent the package ends |
US4532152A (en) * | 1982-03-05 | 1985-07-30 | Elarde Vito D | Fabrication of a printed circuit board with metal-filled channels |
US4412642A (en) | 1982-03-15 | 1983-11-01 | Western Electric Co., Inc. | Cast solder leads for leadless semiconductor circuits |
JPS58173790A (ja) | 1982-04-06 | 1983-10-12 | シチズン時計株式会社 | 表示装置と半導体装置の接続構造 |
US4754316A (en) | 1982-06-03 | 1988-06-28 | Texas Instruments Incorporated | Solid state interconnection system for three dimensional integrated circuit structures |
US4551746A (en) | 1982-10-05 | 1985-11-05 | Mayo Foundation | Leadless chip carrier apparatus providing an improved transmission line environment and improved heat dissipation |
JPS5988860A (ja) | 1982-11-12 | 1984-05-22 | Matsushita Electric Ind Co Ltd | 金属リ−ドへの金属突起物形成方法 |
US4442938A (en) | 1983-03-22 | 1984-04-17 | Advanced Interconnections | Socket terminal positioning method and construction |
JPS59195856A (ja) * | 1983-04-20 | 1984-11-07 | Fujitsu Ltd | 半導体装置及びその製造方法 |
US4567432A (en) * | 1983-06-09 | 1986-01-28 | Texas Instruments Incorporated | Apparatus for testing integrated circuits |
US4513355A (en) | 1983-06-15 | 1985-04-23 | Motorola, Inc. | Metallization and bonding means and method for VLSI packages |
JPS6010298A (ja) | 1983-06-29 | 1985-01-19 | 富士通株式会社 | 音声メツセ−ジ長予測方式 |
US4705205A (en) | 1983-06-30 | 1987-11-10 | Raychem Corporation | Chip carrier mounting device |
US4664309A (en) | 1983-06-30 | 1987-05-12 | Raychem Corporation | Chip mounting device |
US4553192A (en) | 1983-08-25 | 1985-11-12 | International Business Machines Corporation | High density planar interconnected integrated circuit package |
US4615573A (en) | 1983-10-28 | 1986-10-07 | Honeywell Inc. | Spring finger interconnect for IC chip carrier |
US4677458A (en) | 1983-11-04 | 1987-06-30 | Control Data Corporation | Ceramic IC package attachment apparatus |
US4545610A (en) * | 1983-11-25 | 1985-10-08 | International Business Machines Corporation | Method for forming elongated solder connections between a semiconductor device and a supporting substrate |
US4751199A (en) | 1983-12-06 | 1988-06-14 | Fairchild Semiconductor Corporation | Process of forming a compliant lead frame for array-type semiconductor packages |
US4520561A (en) | 1983-12-16 | 1985-06-04 | Rca Corporation | Method of fabricating an electronic circuit including an aperture through the substrate thereof |
KR900001273B1 (ko) | 1983-12-23 | 1990-03-05 | 후지쑤 가부시끼가이샤 | 반도체 집적회로 장치 |
US4547833A (en) | 1983-12-23 | 1985-10-15 | Schlumberger Technology Corporation | High density electronics packaging system for hostile environment |
US4597522A (en) | 1983-12-26 | 1986-07-01 | Kabushiki Kaisha Toshiba | Wire bonding method and device |
US4581291A (en) | 1983-12-29 | 1986-04-08 | Bongianni Wayne L | Microminiature coaxial cable and methods manufacture |
JPS60150657A (ja) * | 1984-01-18 | 1985-08-08 | Hitachi Ltd | レジンモ−ルド半導体装置 |
US4670770A (en) | 1984-02-21 | 1987-06-02 | American Telephone And Telegraph Company | Integrated circuit chip-and-substrate assembly |
US4595794A (en) | 1984-03-19 | 1986-06-17 | At&T Bell Laboratories | Component mounting apparatus |
US4574470A (en) | 1984-03-19 | 1986-03-11 | Trilogy Computer Development Partners, Ltd. | Semiconductor chip mounting system |
US4597617A (en) | 1984-03-19 | 1986-07-01 | Tektronix, Inc. | Pressure interconnect package for integrated circuits |
US4627151A (en) | 1984-03-22 | 1986-12-09 | Thomson Components-Mostek Corporation | Automatic assembly of integrated circuits |
US4685998A (en) | 1984-03-22 | 1987-08-11 | Thomson Components - Mostek Corp. | Process of forming integrated circuits with contact pads in a standard array |
US4548451A (en) * | 1984-04-27 | 1985-10-22 | International Business Machines Corporation | Pinless connector interposer and method for making the same |
US4667219A (en) * | 1984-04-27 | 1987-05-19 | Trilogy Computer Development Partners, Ltd. | Semiconductor chip interface |
DK291184D0 (da) * | 1984-06-13 | 1984-06-13 | Boeegh Petersen Allan | Fremgangsmaade og indretning til test af kredsloebsplader |
JPS6132490A (ja) | 1984-07-24 | 1986-02-15 | 富士通株式会社 | フラツトリ−ドパツケ−ジ型電子部品の取付け構造 |
US4600138A (en) | 1984-07-25 | 1986-07-15 | Hughes Aircraft Company | Bonding tool and clamp assembly and wire handling method |
EP0169574B1 (en) | 1984-07-27 | 1990-04-25 | Kabushiki Kaisha Toshiba | Apparatus for manufacturing semiconductor device |
US4772936A (en) | 1984-09-24 | 1988-09-20 | United Technologies Corporation | Pretestable double-sided tab design |
GB2167228B (en) | 1984-10-11 | 1988-05-05 | Anamartic Ltd | Integrated circuit package |
US4747784A (en) * | 1986-05-16 | 1988-05-31 | Daymarc Corporation | Contactor for integrated circuits |
DE3536908A1 (de) | 1984-10-18 | 1986-04-24 | Sanyo Electric Co., Ltd., Moriguchi, Osaka | Induktivitaetselement und verfahren zur herstellung desselben |
DE3442131A1 (de) * | 1984-11-17 | 1986-05-22 | Messerschmitt-Bölkow-Blohm GmbH, 8012 Ottobrunn | Verfahren zum einkapseln von mikroelektronischen halbleiter- und schichtschaltungen |
US4649415A (en) | 1985-01-15 | 1987-03-10 | National Semiconductor Corporation | Semiconductor package with tape mounted die |
US4659437A (en) | 1985-01-19 | 1987-04-21 | Tokusen Kogyo Kabushiki Kaisha | Method of thermal diffusion alloy plating for steel wire on continuous basis |
US4634199A (en) | 1985-01-22 | 1987-01-06 | Itt Corporation | Connector assembly for making multiple connections in a thin space |
JPS61170054A (ja) * | 1985-01-23 | 1986-07-31 | Mitsubishi Electric Corp | クリツプリ−ド |
US4604644A (en) | 1985-01-28 | 1986-08-05 | International Business Machines Corporation | Solder interconnection structure for joining semiconductor devices to substrates that have improved fatigue life, and process for making |
US4673967A (en) | 1985-01-29 | 1987-06-16 | Texas Instruments Incorporated | Surface mounted system for leaded semiconductor devices |
US4592617A (en) * | 1985-02-06 | 1986-06-03 | North American Specialties Corporation | Solder-bearing terminal |
US4982264A (en) | 1985-02-27 | 1991-01-01 | Texas Instruments Incorporated | High density integrated circuit package |
US4628410A (en) | 1985-04-10 | 1986-12-09 | Itt Corporation | Surface mounting connector |
JPH0763083B2 (ja) | 1985-04-22 | 1995-07-05 | 日本特殊陶業株式会社 | 端子接続構造およびその接続方法 |
US4642889A (en) | 1985-04-29 | 1987-02-17 | Amp Incorporated | Compliant interconnection and method therefor |
US4640499A (en) | 1985-05-01 | 1987-02-03 | The United States Of America As Represented By The Secretary Of The Air Force | Hermetic chip carrier compliant soldering pads |
US4724383A (en) | 1985-05-03 | 1988-02-09 | Testsystems, Inc. | PC board test fixture |
US4837622A (en) | 1985-05-10 | 1989-06-06 | Micro-Probe, Inc. | High density probe card |
US4757256A (en) | 1985-05-10 | 1988-07-12 | Micro-Probe, Inc. | High density probe card |
US4647959A (en) | 1985-05-20 | 1987-03-03 | Tektronix, Inc. | Integrated circuit package, and method of forming an integrated circuit package |
US4628406A (en) | 1985-05-20 | 1986-12-09 | Tektronix, Inc. | Method of packaging integrated circuit chips, and integrated circuit package |
FR2583254A1 (fr) | 1985-06-10 | 1986-12-12 | Thevenin Gilles | Panneau de montage d'elements amovibles, en particulier pour jouets pedagogiques |
JPS61287254A (ja) * | 1985-06-14 | 1986-12-17 | Hitachi Device Eng Co Ltd | 半導体装置 |
JPS61287155A (ja) | 1985-06-14 | 1986-12-17 | Hitachi Ltd | 半導体装置及び半導体装置の製造方法 |
US4647126A (en) | 1985-06-17 | 1987-03-03 | Sperry Corporation | Compliant lead clip |
US4641426A (en) | 1985-06-21 | 1987-02-10 | Associated Enterprises, Inc. | Surface mount compatible connector system with mechanical integrity |
US4780836A (en) | 1985-08-14 | 1988-10-25 | Kabushiki Kaisha Toshiba | Method of testing semiconductor devices using a probe card |
US4661192A (en) | 1985-08-22 | 1987-04-28 | Motorola, Inc. | Low cost integrated circuit bonding process |
CA1226966A (en) | 1985-09-10 | 1987-09-15 | Gabriel Marcantonio | Integrated circuit chip package |
JPS6273650A (ja) | 1985-09-27 | 1987-04-04 | Hitachi Ltd | 電気部品 |
US4646435A (en) | 1985-10-04 | 1987-03-03 | Raychem Corporation | Chip carrier alignment device and alignment method |
US5476211A (en) * | 1993-11-16 | 1995-12-19 | Form Factor, Inc. | Method of manufacturing electrical contacts, using a sacrificial member |
US4764722A (en) * | 1985-10-28 | 1988-08-16 | International Business Machines Corporation | Coaxial probe |
US4874721A (en) | 1985-11-11 | 1989-10-17 | Nec Corporation | Method of manufacturing a multichip package with increased adhesive strength |
US4890194A (en) | 1985-11-22 | 1989-12-26 | Texas Instruments Incorporated | A chip carrier and mounting structure connected to the chip carrier |
JPS62123707A (ja) | 1985-11-22 | 1987-06-05 | 株式会社村田製作所 | 電子部品の製造方法 |
US4750089A (en) | 1985-11-22 | 1988-06-07 | Texas Instruments Incorporated | Circuit board with a chip carrier and mounting structure connected to the chip carrier |
US4903120A (en) | 1985-11-22 | 1990-02-20 | Texas Instruments Incorporated | Chip carrier with interconnects on lid |
AT385932B (de) | 1985-12-13 | 1988-06-10 | Neumayer Karl | Band- bzw. drahtfoermiges material |
US4924353A (en) | 1985-12-20 | 1990-05-08 | Hughes Aircraft Company | Connector system for coupling to an integrated circuit chip |
US4716049A (en) | 1985-12-20 | 1987-12-29 | Hughes Aircraft Company | Compressive pedestal for microminiature connections |
US4902606A (en) | 1985-12-20 | 1990-02-20 | Hughes Aircraft Company | Compressive pedestal for microminiature connections |
US4700473A (en) | 1986-01-03 | 1987-10-20 | Motorola Inc. | Method of making an ultra high density pad array chip carrier |
US4700276A (en) | 1986-01-03 | 1987-10-13 | Motorola Inc. | Ultra high density pad array chip carrier |
JPS62160373A (ja) | 1986-01-09 | 1987-07-16 | 三菱重工業株式会社 | 廃船利用式屋内工場形成方法 |
US4793814A (en) | 1986-07-21 | 1988-12-27 | Rogers Corporation | Electrical circuit board interconnect |
US4721993A (en) | 1986-01-31 | 1988-01-26 | Olin Corporation | Interconnect tape for use in tape automated bonding |
US4709468A (en) | 1986-01-31 | 1987-12-01 | Texas Instruments Incorporated | Method for producing an integrated circuit product having a polyimide film interconnection structure |
JPS62194652A (ja) | 1986-02-21 | 1987-08-27 | Hitachi Ltd | 半導体装置 |
US4807021A (en) | 1986-03-10 | 1989-02-21 | Kabushiki Kaisha Toshiba | Semiconductor device having stacking structure |
US4695870A (en) | 1986-03-27 | 1987-09-22 | Hughes Aircraft Company | Inverted chip carrier |
JPS62246480A (ja) * | 1986-04-16 | 1987-10-27 | 信濃空圧工業株式会社 | 締め付け装置 |
US4681654A (en) | 1986-05-21 | 1987-07-21 | International Business Machines Corporation | Flexible film semiconductor chip carrier |
US4878611A (en) * | 1986-05-30 | 1989-11-07 | American Telephone And Telegraph Company, At&T Bell Laboratories | Process for controlling solder joint geometry when surface mounting a leadless integrated circuit package on a substrate |
US4695872A (en) | 1986-08-01 | 1987-09-22 | Texas Instruments Incorporated | High density micropackage for IC chips |
US4767344A (en) | 1986-08-22 | 1988-08-30 | Burndy Corporation | Solder mounting of electrical contacts |
FR2604029B1 (fr) | 1986-09-16 | 1994-08-05 | Toshiba Kk | Puce de circuit integre possedant des bornes de sortie ameliorees |
US4937203A (en) | 1986-09-26 | 1990-06-26 | General Electric Company | Method and configuration for testing electronic circuits and integrated circuit chips using a removable overlay layer |
US4918811A (en) | 1986-09-26 | 1990-04-24 | General Electric Company | Multichip integrated circuit packaging method |
US4884122A (en) | 1988-08-05 | 1989-11-28 | General Electric Company | Method and configuration for testing electronic circuits and integrated circuit chips using a removable overlay layer |
US4728751A (en) * | 1986-10-06 | 1988-03-01 | International Business Machines Corporation | Flexible electrical connection and method of making same |
US4777564A (en) | 1986-10-16 | 1988-10-11 | Motorola, Inc. | Leadform for use with surface mounted components |
US4970570A (en) | 1986-10-28 | 1990-11-13 | International Business Machines Corporation | Use of tapered head pin design to improve the stress distribution in the braze joint |
US4811082A (en) | 1986-11-12 | 1989-03-07 | International Business Machines Corporation | High performance integrated circuit packaging structure |
EP0268181B1 (en) | 1986-11-15 | 1992-07-29 | Matsushita Electric Works, Ltd. | Plastic molded pin grid chip carrier package |
US4764848A (en) * | 1986-11-24 | 1988-08-16 | International Business Machines Corporation | Surface mounted array strain relief device |
US4814295A (en) | 1986-11-26 | 1989-03-21 | Northern Telecom Limited | Mounting of semiconductor chips on a plastic substrate |
JPH07112041B2 (ja) | 1986-12-03 | 1995-11-29 | シャープ株式会社 | 半導体装置の製造方法 |
US5189507A (en) * | 1986-12-17 | 1993-02-23 | Raychem Corporation | Interconnection of electronic components |
US4955523A (en) * | 1986-12-17 | 1990-09-11 | Raychem Corporation | Interconnection of electronic components |
JP2533511B2 (ja) * | 1987-01-19 | 1996-09-11 | 株式会社日立製作所 | 電子部品の接続構造とその製造方法 |
US5086337A (en) | 1987-01-19 | 1992-02-04 | Hitachi, Ltd. | Connecting structure of electronic part and electronic device using the structure |
US4783719A (en) | 1987-01-20 | 1988-11-08 | Hughes Aircraft Company | Test connector for electrical devices |
US5285949A (en) | 1987-01-26 | 1994-02-15 | Hitachi, Ltd. | Wire-bonding method, wire-bonding apparatus, and semiconductor device produced by the wire-bonding method |
US4855867A (en) | 1987-02-02 | 1989-08-08 | International Business Machines Corporation | Full panel electronic packaging structure |
US4776804A (en) * | 1987-02-05 | 1988-10-11 | Texas Instruments Incorporated | Circuit board systems, connectors used therein, and methods for making the connectors and systems |
US4816426A (en) | 1987-02-19 | 1989-03-28 | Olin Corporation | Process for manufacturing plastic pin grid arrays and the product produced thereby |
US5057461A (en) | 1987-03-19 | 1991-10-15 | Texas Instruments Incorporated | Method of mounting integrated circuit interconnect leads releasably on film |
US5196268A (en) | 1987-03-19 | 1993-03-23 | Texas Instruments Incorporated | Integrated circuit interconnect leads releasably mounted on film |
US4942140A (en) | 1987-03-25 | 1990-07-17 | Mitsubishi Denki Kabushiki Kaisha | Method of packaging semiconductor device |
US4861452A (en) | 1987-04-13 | 1989-08-29 | Texas Instruments Incorporated | Fixture for plating tall contact bumps on integrated circuit |
US4931149A (en) | 1987-04-13 | 1990-06-05 | Texas Instruments Incorporated | Fixture and a method for plating contact bumps for integrated circuits |
US4874476A (en) | 1987-04-13 | 1989-10-17 | Texas Instruments Incorporated | Fixture for plating tall contact bumps on integrated circuit |
US5024746A (en) | 1987-04-13 | 1991-06-18 | Texas Instruments Incorporated | Fixture and a method for plating contact bumps for integrated circuits |
US4874722A (en) | 1987-04-16 | 1989-10-17 | Texas Instruments Incorporated | Process of packaging a semiconductor device with reduced stress forces |
US5106784A (en) | 1987-04-16 | 1992-04-21 | Texas Instruments Incorporated | Method of making a post molded cavity package with internal dam bar for integrated circuit |
US4983907A (en) | 1987-05-14 | 1991-01-08 | Intel Corporation | Driven guard probe card |
US5045975A (en) | 1987-05-21 | 1991-09-03 | Cray Computer Corporation | Three dimensionally interconnected module assembly |
US5195237A (en) * | 1987-05-21 | 1993-03-23 | Cray Computer Corporation | Flying leads for integrated circuits |
US4796078A (en) | 1987-06-15 | 1989-01-03 | International Business Machines Corporation | Peripheral/area wire bonding technique |
US4857482A (en) | 1987-06-30 | 1989-08-15 | Kabushiki Kaisha Toshiba | Method of forming bump electrode and electronic circuit device |
US4818823A (en) | 1987-07-06 | 1989-04-04 | Micro-Circuits, Inc. | Adhesive component means for attaching electrical components to conductors |
US4967261A (en) | 1987-07-30 | 1990-10-30 | Mitsubishi Denki Kabushiki Kaisha | Tape carrier for assembling an IC chip on a substrate |
US4956749A (en) | 1987-11-20 | 1990-09-11 | Hewlett-Packard Company | Interconnect structure for integrated circuits |
US5014111A (en) | 1987-12-08 | 1991-05-07 | Matsushita Electric Industrial Co., Ltd. | Electrical contact bump and a package provided with the same |
US4926241A (en) | 1988-02-19 | 1990-05-15 | Microelectronics And Computer Technology Corporation | Flip substrate for chip mount |
US4827611A (en) | 1988-03-28 | 1989-05-09 | Control Data Corporation | Compliant S-leads for chip carriers |
US4858819A (en) | 1988-03-29 | 1989-08-22 | Hughes Aircraft Company | Orthogonal bonding method and equipment |
US4878846A (en) | 1988-04-06 | 1989-11-07 | Schroeder Jon M | Electronic circuit chip connection assembly and method |
US4985310A (en) * | 1988-04-08 | 1991-01-15 | International Business Machines Corp. | Multilayered metallurgical structure for an electronic component |
US4871964A (en) * | 1988-04-12 | 1989-10-03 | G. G. B. Industries, Inc. | Integrated circuit probing apparatus |
US4918032A (en) | 1988-04-13 | 1990-04-17 | General Motors Corporation | Method for fabricating three-dimensional microstructures and a high-sensitivity integrated vibration sensor using such microstructures |
US5103557A (en) | 1988-05-16 | 1992-04-14 | Leedy Glenn J | Making and testing an integrated circuit using high density probe points |
JPH01313969A (ja) * | 1988-06-13 | 1989-12-19 | Hitachi Ltd | 半導体装置 |
US5185073A (en) | 1988-06-21 | 1993-02-09 | International Business Machines Corporation | Method of fabricating nendritic materials |
US4842184A (en) | 1988-06-23 | 1989-06-27 | Ltv Aerospace & Defense Company | Method and apparatus for applying solder preforms |
US4887148A (en) | 1988-07-15 | 1989-12-12 | Advanced Micro Devices, Inc. | Pin grid array package structure |
US4943845A (en) | 1988-08-02 | 1990-07-24 | Northern Telecom Limited | Thick film packages with common wafer aperture placement |
US5025306A (en) | 1988-08-09 | 1991-06-18 | Texas Instruments Incorporated | Assembly of semiconductor chips |
US5059143A (en) * | 1988-09-08 | 1991-10-22 | Amp Incorporated | Connector contact |
US4907734A (en) | 1988-10-28 | 1990-03-13 | International Business Machines Corporation | Method of bonding gold or gold alloy wire to lead tin solder |
DE3838413A1 (de) | 1988-11-12 | 1990-05-17 | Mania Gmbh | Adapter fuer elektronische pruefvorrichtungen fuer leiterplatten und dergl. |
US4903889A (en) | 1988-11-14 | 1990-02-27 | Raychem Corporation | Connection to a component for use in an electronics assembly |
US4996629A (en) * | 1988-11-14 | 1991-02-26 | International Business Machines Corporation | Circuit board with self-supporting connection between sides |
US5037023A (en) * | 1988-11-28 | 1991-08-06 | Hitachi, Ltd. | Method and apparatus for wire bonding |
JPH02174255A (ja) | 1988-12-27 | 1990-07-05 | Mitsubishi Electric Corp | 半導体集積回路装置 |
US5024372A (en) | 1989-01-03 | 1991-06-18 | Motorola, Inc. | Method of making high density solder bumps and a substrate socket for high density solder bumps |
FR2643753A1 (fr) * | 1989-02-28 | 1990-08-31 | Commissariat Energie Atomique | Procede d'interconnexion de composants electriques au moyen d'elements conducteurs, deformables et sensiblement spheriques |
JPH02237047A (ja) | 1989-03-09 | 1990-09-19 | Mitsubishi Electric Corp | 半導体試験装置 |
US4932902A (en) | 1989-03-21 | 1990-06-12 | Crane Electronics, Inc. | Ultra-high density electrical interconnect system |
US5396104A (en) * | 1989-03-28 | 1995-03-07 | Nippon Steel Corporation | Resin coated bonding wire, method of manufacturing the same, and semiconductor device |
US4922376A (en) | 1989-04-10 | 1990-05-01 | Unistructure, Inc. | Spring grid array interconnection for active microelectronic elements |
JP2810101B2 (ja) * | 1989-04-17 | 1998-10-15 | 日本エー・エム・ピー株式会社 | 電気ピンおよびその製造方法 |
US5077633A (en) | 1989-05-01 | 1991-12-31 | Motorola Inc. | Grounding an ultra high density pad array chip carrier |
US4914814A (en) * | 1989-05-04 | 1990-04-10 | International Business Machines Corporation | Process of fabricating a circuit package |
US5041901A (en) | 1989-05-10 | 1991-08-20 | Hitachi, Ltd. | Lead frame and semiconductor device using the same |
JP2598129B2 (ja) * | 1989-05-18 | 1997-04-09 | 三菱電機株式会社 | 半導体装置 |
US5202061A (en) | 1989-05-26 | 1993-04-13 | International Business Machines Corporation | Electrically conductive polymeric materials and uses thereof |
US5198153A (en) | 1989-05-26 | 1993-03-30 | International Business Machines Corporation | Electrically conductive polymeric |
US5200112A (en) | 1989-05-26 | 1993-04-06 | International Business Machines Corporation | Electrically conductive polymeric materials and uses thereof |
US5060843A (en) * | 1989-06-07 | 1991-10-29 | Nec Corporation | Process of forming bump on electrode of semiconductor chip and apparatus used therefor |
US5366380A (en) | 1989-06-13 | 1994-11-22 | General Datacomm, Inc. | Spring biased tapered contact elements for electrical connectors and integrated circuit packages |
US5349495A (en) * | 1989-06-23 | 1994-09-20 | Vlsi Technology, Inc. | System for securing and electrically connecting a semiconductor chip to a substrate |
US4954878A (en) | 1989-06-29 | 1990-09-04 | Digital Equipment Corp. | Method of packaging and powering integrated circuit chips and the chip assembly formed thereby |
US5246159A (en) | 1989-07-19 | 1993-09-21 | Nec Corporation | Method for forming a bump by bonding a ball on an electrode of an electronic device and apparatus for forming the same |
US5059557A (en) | 1989-08-08 | 1991-10-22 | Texas Instruments Incorporated | Method of electrically connecting integrated circuits by edge-insertion in grooved support members |
US5047711A (en) | 1989-08-23 | 1991-09-10 | Silicon Connections Corporation | Wafer-level burn-in testing of integrated circuits |
US5299730A (en) | 1989-08-28 | 1994-04-05 | Lsi Logic Corporation | Method and apparatus for isolation of flux materials in flip-chip manufacturing |
US5053922A (en) | 1989-08-31 | 1991-10-01 | Hewlett-Packard Company | Demountable tape-automated bonding system |
US5055778A (en) * | 1989-10-02 | 1991-10-08 | Nihon Denshizairyo Kabushiki Kaisha | Probe card in which contact pressure and relative position of each probe end are correctly maintained |
US5156983A (en) * | 1989-10-26 | 1992-10-20 | Digtial Equipment Corporation | Method of manufacturing tape automated bonding semiconductor package |
US4998885A (en) | 1989-10-27 | 1991-03-12 | International Business Machines Corporation | Elastomeric area array interposer |
JPH03142847A (ja) | 1989-10-30 | 1991-06-18 | Hitachi Ltd | 半導体集積回路装置 |
US5012187A (en) | 1989-11-03 | 1991-04-30 | Motorola, Inc. | Method for parallel testing of semiconductor devices |
US5077598A (en) * | 1989-11-08 | 1991-12-31 | Hewlett-Packard Company | Strain relief flip-chip integrated circuit assembly with test fixturing |
US5399982A (en) | 1989-11-13 | 1995-03-21 | Mania Gmbh & Co. | Printed circuit board testing device with foil adapter |
US5006673A (en) | 1989-12-07 | 1991-04-09 | Motorola, Inc. | Fabrication of pad array carriers from a universal interconnect structure |
US5379515A (en) | 1989-12-11 | 1995-01-10 | Canon Kabushiki Kaisha | Process for preparing electrical connecting member |
US5095187A (en) * | 1989-12-20 | 1992-03-10 | Raychem Corporation | Weakening wire supplied through a wire bonder |
US5007576A (en) | 1989-12-26 | 1991-04-16 | Hughes Aircraft Company | Testable ribbon bonding method and wedge bonding tool for microcircuit device fabrication |
US5045921A (en) | 1989-12-26 | 1991-09-03 | Motorola, Inc. | Pad array carrier IC device using flexible tape |
JPH03212006A (ja) * | 1990-01-17 | 1991-09-17 | Sony Corp | 高周波回路用パッケージ |
US4989069A (en) | 1990-01-29 | 1991-01-29 | Motorola, Inc. | Semiconductor package having leads that break-away from supports |
US5066907A (en) | 1990-02-06 | 1991-11-19 | Cerprobe Corporation | Probe system for device and circuit testing |
US5065281A (en) | 1990-02-12 | 1991-11-12 | Rogers Corporation | Molded integrated circuit package incorporating heat sink |
US5471151A (en) | 1990-02-14 | 1995-11-28 | Particle Interconnect, Inc. | Electrical interconnect using particle enhanced joining of metal surfaces |
US5083697A (en) | 1990-02-14 | 1992-01-28 | Difrancesco Louis | Particle-enhanced joining of metal surfaces |
US4975079A (en) | 1990-02-23 | 1990-12-04 | International Business Machines Corp. | Connector assembly for chip testing |
DE4115043A1 (de) | 1991-05-08 | 1997-07-17 | Gen Electric | Dichtgepackte Verbindungsstruktur, die eine Kammer enthält |
US5123850A (en) | 1990-04-06 | 1992-06-23 | Texas Instruments Incorporated | Non-destructive burn-in test socket for integrated circuit die |
JPH0412483A (ja) | 1990-04-27 | 1992-01-17 | Kel Corp | Icソケット |
US5245751A (en) * | 1990-04-27 | 1993-09-21 | Circuit Components, Incorporated | Array connector |
US5071359A (en) | 1990-04-27 | 1991-12-10 | Rogers Corporation | Array connector |
US5047830A (en) | 1990-05-22 | 1991-09-10 | Amp Incorporated | Field emitter array integrated circuit chip interconnection |
US5227662A (en) | 1990-05-24 | 1993-07-13 | Nippon Steel Corporation | Composite lead frame and semiconductor device using the same |
US5130779A (en) | 1990-06-19 | 1992-07-14 | International Business Machines Corporation | Solder mass having conductive encapsulating arrangement |
US5127570A (en) | 1990-06-28 | 1992-07-07 | Cray Research, Inc. | Flexible automated bonding method and apparatus |
US5147084A (en) | 1990-07-18 | 1992-09-15 | International Business Machines Corporation | Interconnection structure and test method |
US5128612A (en) | 1990-07-31 | 1992-07-07 | Texas Instruments Incorporated | Disposable high performance test head |
US5187020A (en) | 1990-07-31 | 1993-02-16 | Texas Instruments Incorporated | Compliant contact pad |
US5134462A (en) | 1990-08-27 | 1992-07-28 | Motorola, Inc. | Flexible film chip carrier having a flexible film substrate and means for maintaining planarity of the substrate |
US5088190A (en) * | 1990-08-30 | 1992-02-18 | Texas Instruments Incorporated | Method of forming an apparatus for burn in testing of integrated circuit chip |
US5192681A (en) | 1990-08-31 | 1993-03-09 | Texas Instruments Incorporated | Low cost erasable programmable read only memory package |
US5136367A (en) | 1990-08-31 | 1992-08-04 | Texas Instruments Incorporated | Low cost erasable programmable read only memory package |
US5029325A (en) | 1990-08-31 | 1991-07-02 | Motorola, Inc. | TAB tape translator for use with semiconductor devices |
US5148265A (en) | 1990-09-24 | 1992-09-15 | Ist Associates, Inc. | Semiconductor chip assemblies with fan-in leads |
US5258330A (en) | 1990-09-24 | 1993-11-02 | Tessera, Inc. | Semiconductor chip assemblies with fan-in leads |
US5148266A (en) | 1990-09-24 | 1992-09-15 | Ist Associates, Inc. | Semiconductor chip assemblies having interposer and flexible lead |
US5166774A (en) * | 1990-10-05 | 1992-11-24 | Motorola, Inc. | Selectively releasing conductive runner and substrate assembly having non-planar areas |
US5072520A (en) | 1990-10-23 | 1991-12-17 | Rogers Corporation | Method of manufacturing an interconnect device having coplanar contact bumps |
US5148103A (en) | 1990-10-31 | 1992-09-15 | Hughes Aircraft Company | Apparatus for testing integrated circuits |
US5136366A (en) | 1990-11-05 | 1992-08-04 | Motorola, Inc. | Overmolded semiconductor package with anchoring means |
US5154341A (en) * | 1990-12-06 | 1992-10-13 | Motorola Inc. | Noncollapsing multisolder interconnection |
US5241133A (en) | 1990-12-21 | 1993-08-31 | Motorola, Inc. | Leadless pad array chip carrier |
US5321277A (en) | 1990-12-31 | 1994-06-14 | Texas Instruments Incorporated | Multi-chip module testing |
US5239199A (en) | 1991-01-14 | 1993-08-24 | Texas Instruments Incorporated | Vertical lead-on-chip package |
US5097100A (en) * | 1991-01-25 | 1992-03-17 | Sundstrand Data Control, Inc. | Noble metal plated wire and terminal assembly, and method of making the same |
US5148968A (en) * | 1991-02-11 | 1992-09-22 | Motorola, Inc. | Solder bump stretch device |
US5157325A (en) * | 1991-02-15 | 1992-10-20 | Compaq Computer Corporation | Compact, wireless apparatus for electrically testing printed circuit boards |
JPH04264758A (ja) | 1991-02-20 | 1992-09-21 | Nec Corp | 半導体チップキャリア |
JP2852134B2 (ja) | 1991-02-20 | 1999-01-27 | 日本電気株式会社 | バンプ形成方法 |
US5379191A (en) | 1991-02-26 | 1995-01-03 | Microelectronics And Computer Technology Corporation | Compact adapter package providing peripheral to area translation for an integrated circuit chip |
US5289346A (en) | 1991-02-26 | 1994-02-22 | Microelectronics And Computer Technology Corporation | Peripheral to area adapter with protective bumper for an integrated circuit chip |
JP2814151B2 (ja) | 1991-02-27 | 1998-10-22 | 株式会社新川 | ワイヤボンデイング方法 |
US5130783A (en) | 1991-03-04 | 1992-07-14 | Texas Instruments Incorporated | Flexible film semiconductor package |
US5283104A (en) | 1991-03-20 | 1994-02-01 | International Business Machines Corporation | Via paste compositions and use thereof to form conductive vias in circuitized ceramic substrates |
US5217597A (en) | 1991-04-01 | 1993-06-08 | Motorola, Inc. | Solder bump transfer method |
US5088007A (en) | 1991-04-04 | 1992-02-11 | Motorola, Inc. | Compliant solder interconnection |
US5118027A (en) | 1991-04-24 | 1992-06-02 | International Business Machines Corporation | Method of aligning and mounting solder balls to a substrate |
US5237203A (en) | 1991-05-03 | 1993-08-17 | Trw Inc. | Multilayer overlay interconnect for high-density packaging of circuit elements |
US5559444A (en) * | 1991-06-04 | 1996-09-24 | Micron Technology, Inc. | Method and apparatus for testing unpackaged semiconductor dice |
US5296744A (en) * | 1991-07-12 | 1994-03-22 | Vlsi Technology, Inc. | Lead frame assembly and method for wiring same |
US5221815A (en) | 1991-07-26 | 1993-06-22 | Raychem Corporation | Heat recoverable soldering device |
US5173055A (en) | 1991-08-08 | 1992-12-22 | Amp Incorporated | Area array connector |
FR2680284B1 (fr) * | 1991-08-09 | 1993-12-03 | Thomson Csf | Dispositif de connexion a tres faible pas et procede de fabrication. |
JPH0548000A (ja) * | 1991-08-13 | 1993-02-26 | Fujitsu Ltd | 半導体装置 |
JP3061954B2 (ja) | 1991-08-20 | 2000-07-10 | 株式会社東芝 | 半導体装置 |
US5131852A (en) | 1991-08-23 | 1992-07-21 | Amp Incorporated | Electrical socket |
US5264787A (en) | 1991-08-30 | 1993-11-23 | Hughes Aircraft Company | Rigid-flex circuits with raised features as IC test probes |
JP2967621B2 (ja) * | 1991-08-27 | 1999-10-25 | 日本電気株式会社 | 半導体装置用パッケージの製造方法 |
US5239447A (en) | 1991-09-13 | 1993-08-24 | International Business Machines Corporation | Stepped electronic device package |
US5574382A (en) * | 1991-09-17 | 1996-11-12 | Japan Synthetic Rubber Co., Ltd. | Inspection electrode unit for printed wiring board |
US5139427A (en) * | 1991-09-23 | 1992-08-18 | Amp Incorporated | Planar array connector and flexible contact therefor |
JP3138969B2 (ja) | 1991-09-24 | 2001-02-26 | 日本ユニット株式会社 | ブラシ用素材 |
JPH07502141A (ja) * | 1991-09-30 | 1995-03-02 | ゼネラル・ダイナミックス・インフォメーション・システムズ・インコーポレーテッド | めっきしたしなやかなリード線 |
US5201454A (en) | 1991-09-30 | 1993-04-13 | Texas Instruments Incorporated | Process for enhanced intermetallic growth in IC interconnections |
US5288007A (en) | 1991-10-04 | 1994-02-22 | International Business Machine Corporation | Apparatus and methods for making simultaneous electrical connections |
US5326643A (en) | 1991-10-07 | 1994-07-05 | International Business Machines Corporation | Adhesive layer in multi-level packaging and organic material as a metal diffusion barrier |
US5152695A (en) | 1991-10-10 | 1992-10-06 | Amp Incorporated | Surface mount electrical connector |
DE69230660T2 (de) * | 1991-10-29 | 2000-12-07 | Sumitomo Wiring Systems | Kabelbaum |
JP2558976B2 (ja) | 1991-11-08 | 1996-11-27 | 松下電器産業株式会社 | 電子部品の電極とリードとの接合方法 |
US5350947A (en) | 1991-11-12 | 1994-09-27 | Nec Corporation | Film carrier semiconductor device |
US5309324A (en) | 1991-11-26 | 1994-05-03 | Herandez Jorge M | Device for interconnecting integrated circuit packages to circuit boards |
US5180977A (en) | 1991-12-02 | 1993-01-19 | Hoya Corporation Usa | Membrane probe contact bump compliancy system |
DE69109869T2 (de) | 1991-12-06 | 1995-09-21 | Sigmatech Co Ltd | Apparat zur Inspektion der inneren Schaltung eines Halbleiters. |
JP3187904B2 (ja) | 1991-12-20 | 2001-07-16 | 山一電機株式会社 | 電気部品用接続器 |
JPH05182729A (ja) | 1991-12-26 | 1993-07-23 | Yamaichi Electron Co Ltd | 電気部品用接触子 |
US5282312A (en) | 1991-12-31 | 1994-02-01 | Tessera, Inc. | Multi-layer circuit construction methods with customization features |
US5214563A (en) | 1991-12-31 | 1993-05-25 | Compaq Computer Corporation | Thermally reactive lead assembly and method for making same |
US5367764A (en) | 1991-12-31 | 1994-11-29 | Tessera, Inc. | Method of making a multi-layer circuit assembly |
US5311059A (en) * | 1992-01-24 | 1994-05-10 | Motorola, Inc. | Backplane grounding for flip-chip integrated circuit |
US5299939A (en) | 1992-03-05 | 1994-04-05 | International Business Machines Corporation | Spring array connector |
US5210939A (en) | 1992-04-17 | 1993-05-18 | Intel Corporation | Lead grid array integrated circuit |
US5424652A (en) | 1992-06-10 | 1995-06-13 | Micron Technology, Inc. | Method and apparatus for testing an unpackaged semiconductor die |
US5345170A (en) * | 1992-06-11 | 1994-09-06 | Cascade Microtech, Inc. | Wafer probe station having integrated guarding, Kelvin connection and shielding systems |
US5228861A (en) * | 1992-06-12 | 1993-07-20 | Amp Incorporated | High density electrical connector system |
US5237743A (en) | 1992-06-19 | 1993-08-24 | International Business Machines Corporation | Method of forming a conductive end portion on a flexible circuit member |
US5442282A (en) | 1992-07-02 | 1995-08-15 | Lsi Logic Corporation | Testing and exercising individual, unsingulated dies on a wafer |
US5347711A (en) * | 1992-07-15 | 1994-09-20 | The Whitaker Corporation | Termination of multi-conductor electrical cables |
JP3151219B2 (ja) | 1992-07-24 | 2001-04-03 | テツセラ,インコーポレイテッド | 取り外し自在のリード支持体を備えた半導体接続構成体およびその製造方法 |
US5338705A (en) | 1992-09-10 | 1994-08-16 | Texas Instruments Incorporated | Pressure differential downset |
US5497546A (en) * | 1992-09-21 | 1996-03-12 | Matsushita Electric Works, Ltd. | Method for mounting lead terminals to circuit board |
US5382898A (en) | 1992-09-21 | 1995-01-17 | Cerprobe Corporation | High density probe card for testing electrical circuits |
US5371654A (en) * | 1992-10-19 | 1994-12-06 | International Business Machines Corporation | Three dimensional high performance interconnection package |
US5327327A (en) | 1992-10-30 | 1994-07-05 | Texas Instruments Incorporated | Three dimensional assembly of integrated circuit chips |
US5535101A (en) * | 1992-11-03 | 1996-07-09 | Motorola, Inc. | Leadless integrated circuit package |
US5334804A (en) * | 1992-11-17 | 1994-08-02 | Fujitsu Limited | Wire interconnect structures for connecting an integrated circuit to a substrate |
US5308797A (en) | 1992-11-24 | 1994-05-03 | Texas Instruments Incorporated | Leads for semiconductor chip assembly and method |
US5656830A (en) * | 1992-12-10 | 1997-08-12 | International Business Machines Corp. | Integrated circuit chip composite having a parylene coating |
US5389743A (en) * | 1992-12-21 | 1995-02-14 | Hughes Aircraft Company | Rivet design for enhanced copper thick-film I/O pad adhesion |
US5497456A (en) * | 1992-12-31 | 1996-03-05 | Intel Corporation | Apparatus for transferring information between an interrupt producer and an interrupt service environment |
US5422574A (en) | 1993-01-14 | 1995-06-06 | Probe Technology Corporation | Large scale protrusion membrane for semiconductor devices under test with very high pin counts |
US5386344A (en) | 1993-01-26 | 1995-01-31 | International Business Machines Corporation | Flex circuit card elastomeric cable connector assembly |
US5313368A (en) | 1993-02-02 | 1994-05-17 | The Whitaker Corporation | Electrical connections between printed circuit boards and integrated circuits surface mounted thereon |
US5306670A (en) | 1993-02-09 | 1994-04-26 | Texas Instruments Incorporated | Multi-chip integrated circuit module and method for fabrication thereof |
US5378982A (en) | 1993-02-25 | 1995-01-03 | Hughes Aircraft Company | Test probe for panel having an overlying protective member adjacent panel contacts |
CA2110472C (en) | 1993-03-01 | 1999-08-10 | Anilkumar Chinuprasad Bhatt | Method and apparatus for in-situ testing of integrated circuit chips |
EP0615131A1 (en) * | 1993-03-10 | 1994-09-14 | Co-Operative Facility For Aging Tester Development | Prober for semiconductor integrated circuit element wafer |
US5414298A (en) | 1993-03-26 | 1995-05-09 | Tessera, Inc. | Semiconductor chip assemblies and components with pressure contact |
US5355283A (en) * | 1993-04-14 | 1994-10-11 | Amkor Electronics, Inc. | Ball grid array with via interconnection |
US5453583A (en) | 1993-05-05 | 1995-09-26 | Lsi Logic Corporation | Interior bond pad arrangements for alleviating thermal stresses |
JP3115155B2 (ja) * | 1993-05-28 | 2000-12-04 | 株式会社東芝 | 半導体装置およびその製造方法 |
US5359493A (en) | 1993-07-09 | 1994-10-25 | Texas Instruments Incorporated | Three dimensional multi-chip module with integral heat sink |
US5550482A (en) * | 1993-07-20 | 1996-08-27 | Tokyo Electron Kabushiki Kaisha | Probe device |
US5398863A (en) | 1993-07-23 | 1995-03-21 | Tessera, Inc. | Shaped lead structure and method |
US5390844A (en) | 1993-07-23 | 1995-02-21 | Tessera, Inc. | Semiconductor inner lead bonding tool |
KR0138618B1 (ko) * | 1993-08-04 | 1998-06-15 | 이노우에 아끼라 | 프로브카드, 프로브카드용 동축 프로브빔 및 그 제조방법 |
US5621263A (en) * | 1993-08-09 | 1997-04-15 | Murata Manufacturing Co., Ltd. | Piezoelectric resonance component |
US5621313A (en) * | 1993-09-09 | 1997-04-15 | Tokyo Seimitsu Co., Ltd. | Wafer probing system and method that stores reference pattern and movement value data for different kinds of wafers |
US5381848A (en) | 1993-09-15 | 1995-01-17 | Lsi Logic Corporation | Casting of raised bump contacts on a substrate |
US5388327A (en) | 1993-09-15 | 1995-02-14 | Lsi Logic Corporation | Fabrication of a dissolvable film carrier containing conductive bump contacts for placement on a semiconductor device package |
US5477611A (en) | 1993-09-20 | 1995-12-26 | Tessera, Inc. | Method of forming interface between die and chip carrier |
US5414299A (en) | 1993-09-24 | 1995-05-09 | Vlsi Technology, Inc. | Semi-conductor device interconnect package assembly for improved package performance |
US5463324A (en) * | 1993-10-26 | 1995-10-31 | Hewlett-Packard Company | Probe with contacts that interdigitate with and wedge between adjacent legs of an IC or the like |
US5397245A (en) | 1993-10-29 | 1995-03-14 | Texas Instruments Incorporated | Non-destructive interconnect system for semiconductor devices |
US5386341A (en) * | 1993-11-01 | 1995-01-31 | Motorola, Inc. | Flexible substrate folded in a U-shape with a rigidizer plate located in the notch of the U-shape |
US6482013B2 (en) * | 1993-11-16 | 2002-11-19 | Formfactor, Inc. | Microelectronic spring contact element and electronic component having a plurality of spring contact elements |
US5455390A (en) | 1994-02-01 | 1995-10-03 | Tessera, Inc. | Microelectronics unit mounting with multiple lead bonding |
US5435482A (en) | 1994-02-04 | 1995-07-25 | Lsi Logic Corporation | Integrated circuit having a coplanar solder ball contact array |
JP3256367B2 (ja) * | 1994-03-10 | 2002-02-12 | 新日本製鐵株式会社 | 樹脂被覆絶縁ボンディングワイヤ |
US5518964A (en) | 1994-07-07 | 1996-05-21 | Tessera, Inc. | Microelectronic mounting with multiple lead deformation and bonding |
US5590460A (en) | 1994-07-19 | 1997-01-07 | Tessera, Inc. | Method of making multilayer circuit |
US5491302A (en) | 1994-09-19 | 1996-02-13 | Tessera, Inc. | Microelectronic bonding with lead motion |
JPH08122463A (ja) | 1994-10-21 | 1996-05-17 | Shoichi Shinozuka | ストップウォッチ及び計時システム |
US5495667A (en) * | 1994-11-07 | 1996-03-05 | Micron Technology, Inc. | Method for forming contact pins for semiconductor dice and interconnects |
US5557501A (en) | 1994-11-18 | 1996-09-17 | Tessera, Inc. | Compliant thermal connectors and assemblies incorporating the same |
EP0804806A1 (en) * | 1994-12-22 | 1997-11-05 | Benedict G. Pace | Device for superheating steam |
US5613861A (en) | 1995-06-07 | 1997-03-25 | Xerox Corporation | Photolithographically patterned spring contact |
KR0156334B1 (ko) * | 1995-10-14 | 1998-10-15 | 김광호 | 차폐 본딩 와이어를 구비하는 고주파, 고밀도용 반도체 칩 패키지 |
JP3142847B2 (ja) | 2000-01-01 | 2001-03-07 | 株式会社ソフィア | パチンコ遊技機 |
-
1994
- 1994-11-15 US US08/340,144 patent/US5917707A/en not_active Expired - Lifetime
- 1994-11-16 CN CN94194179A patent/CN1045693C/zh not_active Expired - Fee Related
- 1994-11-16 EP EP02004602A patent/EP1241481A3/en not_active Withdrawn
- 1994-11-16 WO PCT/US1994/013373 patent/WO1995014314A1/en active IP Right Grant
- 1994-11-16 EP EP95901950A patent/EP0729652B1/en not_active Expired - Lifetime
- 1994-11-16 DE DE69431565T patent/DE69431565T2/de not_active Expired - Lifetime
- 1994-11-16 JP JP7514639A patent/JP3006885B2/ja not_active Expired - Lifetime
- 1994-11-16 KR KR1019960702580A patent/KR100210691B1/ko not_active IP Right Cessation
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1996
- 1996-10-21 US US08/735,813 patent/US5926951A/en not_active Expired - Lifetime
- 1996-10-21 US US08/735,809 patent/US6279227B1/en not_active Expired - Fee Related
- 1996-10-21 US US08/735,812 patent/US6274823B1/en not_active Expired - Fee Related
- 1996-10-21 US US08/735,815 patent/US6184587B1/en not_active Expired - Fee Related
- 1996-10-21 US US08/735,810 patent/US6242803B1/en not_active Expired - Lifetime
- 1996-10-21 US US08/735,811 patent/US5900738A/en not_active Expired - Lifetime
- 1996-10-21 US US08/735,817 patent/US6476333B1/en not_active Expired - Fee Related
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1999
- 1999-04-20 US US09/295,269 patent/US6956174B2/en not_active Expired - Fee Related
- 1999-08-13 JP JP22917099A patent/JP3939467B2/ja not_active Expired - Fee Related
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2005
- 2005-06-02 JP JP2005162980A patent/JP3996172B2/ja not_active Expired - Fee Related
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- 2006-12-28 JP JP2006355406A patent/JP4092361B2/ja not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160110717A (ko) | 2015-03-11 | 2016-09-22 | 주식회사 듀링플러스 | 탄성 시그널 핀 |
Also Published As
Publication number | Publication date |
---|---|
JP4092361B2 (ja) | 2008-05-28 |
WO1995014314A1 (en) | 1995-05-26 |
US5917707A (en) | 1999-06-29 |
JP2000124397A (ja) | 2000-04-28 |
EP0729652A4 (en) | 1998-06-24 |
CN1045693C (zh) | 1999-10-13 |
US6274823B1 (en) | 2001-08-14 |
JP3996172B2 (ja) | 2007-10-24 |
JP2005252313A (ja) | 2005-09-15 |
US6476333B1 (en) | 2002-11-05 |
US6184587B1 (en) | 2001-02-06 |
CN1135268A (zh) | 1996-11-06 |
EP0729652A1 (en) | 1996-09-04 |
US5900738A (en) | 1999-05-04 |
EP0729652B1 (en) | 2002-10-16 |
JP2007173846A (ja) | 2007-07-05 |
US5926951A (en) | 1999-07-27 |
US20010002624A1 (en) | 2001-06-07 |
EP1241481A3 (en) | 2004-01-02 |
JP3006885B2 (ja) | 2000-02-07 |
JPH09505439A (ja) | 1997-05-27 |
DE69431565T2 (de) | 2003-06-12 |
JP3939467B2 (ja) | 2007-07-04 |
US6279227B1 (en) | 2001-08-28 |
EP1241481A2 (en) | 2002-09-18 |
US6242803B1 (en) | 2001-06-05 |
DE69431565D1 (de) | 2002-11-21 |
US6956174B2 (en) | 2005-10-18 |
KR100210691B1 (ko) | 1999-07-15 |
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