WO2003021691A1 - Semiconductor light emitting device, light emitting apparatus and production method for semiconductor light emitting device - Google Patents

Semiconductor light emitting device, light emitting apparatus and production method for semiconductor light emitting device Download PDF

Info

Publication number
WO2003021691A1
WO2003021691A1 PCT/JP2002/008959 JP0208959W WO03021691A1 WO 2003021691 A1 WO2003021691 A1 WO 2003021691A1 JP 0208959 W JP0208959 W JP 0208959W WO 03021691 A1 WO03021691 A1 WO 03021691A1
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
emitting device
semiconductor light
blue led
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2002/008959
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
Toshihide Maeda
Shozo Oshio
Katsuaki Iwama
Hiromi Kitahara
Tadaaki Ikeda
Hidenori Kamei
Yasuyuki Hanada
Kei Sakanoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US10/469,740 priority Critical patent/US7023019B2/en
Priority to EP02762994A priority patent/EP1367655A4/en
Priority to KR1020037007224A priority patent/KR100923804B1/ko
Priority to JP2003525920A priority patent/JP3749243B2/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of WO2003021691A1 publication Critical patent/WO2003021691A1/ja
Anticipated expiration legal-status Critical
Priority to US11/143,660 priority patent/US7422504B2/en
Priority to US11/349,896 priority patent/US7629620B2/en
Priority to US11/585,892 priority patent/US7592639B2/en
Priority to US11/908,000 priority patent/US7772769B2/en
Priority to US15/201,883 priority patent/USRE47453E1/en
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C09K11/025—Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
    • C09K11/7729—Chalcogenides
    • C09K11/7731—Chalcogenides with alkaline earth metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
    • C09K11/77342—Silicates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
    • C09K11/7735—Germanates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
    • C09K11/7774—Aluminates
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S6/00—Lighting devices intended to be free-standing
    • F21S6/002—Table lamps, e.g. for ambient lighting
    • F21S6/003—Table lamps, e.g. for ambient lighting for task lighting, e.g. for reading or desk work, e.g. angle poise lamps
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S6/00—Lighting devices intended to be free-standing
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12035—Zener diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H10W72/01515—
    • H10W72/075—
    • H10W72/5522—
    • H10W72/5524—
    • H10W72/884—
    • H10W74/00—
    • H10W90/722—
    • H10W90/734—
    • H10W90/754—
    • H10W90/756—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Led Device Packages (AREA)
  • Luminescent Compositions (AREA)
  • Led Devices (AREA)
PCT/JP2002/008959 2001-09-03 2002-09-03 Semiconductor light emitting device, light emitting apparatus and production method for semiconductor light emitting device Ceased WO2003021691A1 (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
US10/469,740 US7023019B2 (en) 2001-09-03 2002-09-03 Light-emitting semiconductor device, light-emitting system and method for fabricating light-emitting semiconductor device
EP02762994A EP1367655A4 (en) 2001-09-03 2002-09-03 "SEMICONDUCTOR LIGHT EMISSION ELEMENT, LIGHT EMISSIONING APPARATUS, AND METHOD OF MANUFACTURING A SEMICONDUCTOR LIGHT EMISSION ELEMENT"
KR1020037007224A KR100923804B1 (ko) 2001-09-03 2002-09-03 반도체발광소자, 발광장치 및 반도체발광소자의 제조방법
JP2003525920A JP3749243B2 (ja) 2001-09-03 2002-09-03 半導体発光デバイス，発光装置及び半導体発光デバイスの製造方法
US11/143,660 US7422504B2 (en) 2001-09-03 2005-06-03 Light-emitting semiconductor device, light-emitting system and method for fabricating light-emitting semiconductor device
US11/349,896 US7629620B2 (en) 2001-09-03 2006-02-09 Light-emitting semiconductor device, light-emitting system and method for fabricating light-emitting semiconductor device
US11/585,892 US7592639B2 (en) 2001-09-03 2006-10-25 Light-emitting semiconductor device, light-emitting system and method for fabricating light-emitting semiconductor device
US11/908,000 US7772769B2 (en) 2001-09-03 2007-10-19 Light-emitting semiconductor device, light-emitting system and method for fabricating light-emitting semiconductor device
US15/201,883 USRE47453E1 (en) 2001-09-03 2016-07-05 Luminescent layer and light-emitting semiconductor device

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP2001265540 2001-09-03
JP2001-265540 2001-09-03
JP2001-381369 2001-12-14
JP2001381368 2001-12-14
JP2001-381370 2001-12-14
JP2001381370 2001-12-14
JP2001-381368 2001-12-14
JP2001381369 2001-12-14

Related Child Applications (3)

Application Number Title Priority Date Filing Date
US10469740 A-371-Of-International 2002-09-03
US11/143,660 Division US7422504B2 (en) 2001-09-03 2005-06-03 Light-emitting semiconductor device, light-emitting system and method for fabricating light-emitting semiconductor device
US11/349,896 Division US7629620B2 (en) 2001-09-03 2006-02-09 Light-emitting semiconductor device, light-emitting system and method for fabricating light-emitting semiconductor device

Publications (1)

Publication Number Publication Date
WO2003021691A1 true WO2003021691A1 (en) 2003-03-13

Family

ID=27482528

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/008959 Ceased WO2003021691A1 (en) 2001-09-03 2002-09-03 Semiconductor light emitting device, light emitting apparatus and production method for semiconductor light emitting device

Country Status (7)

Country Link
US (6) US7023019B2 (enExample)
EP (2) EP2017901A1 (enExample)
JP (4) JP3749243B2 (enExample)
KR (2) KR20080087049A (enExample)
CN (2) CN101335322B (enExample)
TW (1) TW595012B (enExample)
WO (1) WO2003021691A1 (enExample)

Cited By (78)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10319091A1 (de) * 2003-04-28 2004-09-09 Siemens Ag Leuchtstoff zum Umwandeln einer Primärstrahlung in eine Sekundärstrahlung
JP2005085895A (ja) * 2003-09-05 2005-03-31 Nichia Chem Ind Ltd 光源装置及び照明装置
WO2005045881A1 (en) * 2003-11-11 2005-05-19 Koninklijke Philips Electronics N.V. Low-pressure vapor discharge lamp with a mercury-free gas filling
WO2005071039A1 (ja) * 2004-01-26 2005-08-04 Kyocera Corporation 波長変換器、発光装置、波長変換器の製造方法および発光装置の製造方法
JP2005277127A (ja) * 2004-03-25 2005-10-06 Stanley Electric Co Ltd 発光デバイス
WO2005098973A1 (en) * 2004-04-07 2005-10-20 Lg Innotek Co., Ltd Light emitting device and phosphor for the same
WO2005098972A1 (en) * 2004-04-07 2005-10-20 Lg Innotek Co., Ltd Light emitting device and phosphor for the same
WO2005106978A1 (ja) * 2004-04-28 2005-11-10 Matsushita Electric Industrial Co., Ltd. 発光装置およびその製造方法
WO2005112137A1 (en) * 2004-05-13 2005-11-24 Seoul Opto-Device Co., Ltd. Light emitting device including rgb light emitting diodes and phosphor
JP2005353888A (ja) * 2004-06-11 2005-12-22 Stanley Electric Co Ltd 発光素子
JP2006124422A (ja) * 2004-10-26 2006-05-18 Toyoda Gosei Co Ltd 改善されたシリケート系蛍光体及びそれを用いたｌｅｄランプ
JP2006245020A (ja) * 2005-02-28 2006-09-14 Sharp Corp 発光ダイオード素子とその製造方法
JP2006299097A (ja) * 2005-04-21 2006-11-02 Matsushita Electric Works Ltd 発光装置
WO2006126819A1 (en) * 2005-05-24 2006-11-30 Seoul Semiconductor Co., Ltd. Light emitting device and phosphor of alkaline earth sulfide therefor
JP2006332163A (ja) * 2005-05-24 2006-12-07 Rohm Co Ltd 白色系発光装置
JP2007500776A (ja) * 2003-05-17 2007-01-18 フォスファーテック コーポレーション シリケート蛍光りん光物質を有する発光装置
JP2007013053A (ja) * 2005-07-04 2007-01-18 Toshiba Corp 発光装置およびその製造方法
JP2007027796A (ja) * 2004-04-27 2007-02-01 Matsushita Electric Ind Co Ltd 発光装置
JP2007506264A (ja) * 2003-09-15 2007-03-15 コニンクリユケ フィリップス エレクトロニクス エヌ．ブイ． 白色発光照明システム
JP2007510040A (ja) * 2003-10-29 2007-04-19 ゲルコアー リミテッド ライアビリティ カンパニー スペクトル特性が向上したガーネット蛍光体材料
JP2007180494A (ja) * 2005-12-27 2007-07-12 Samsung Electro Mech Co Ltd 蛍光体膜形成方法及びこれを用いた発光ダイオードパッケージの製造方法
WO2007091687A1 (ja) * 2006-02-10 2007-08-16 Mitsubishi Chemical Corporation 蛍光体及びその製造方法、蛍光体含有組成物、発光装置、並びに画像表示装置及び照明装置
JP2007227680A (ja) * 2006-02-23 2007-09-06 Matsushita Electric Works Ltd 発光ダイオードを用いた白色照明装置
US7278756B2 (en) 2003-11-14 2007-10-09 Hon Hai Precision Industry Co., Ltd. Light-emitting diode and backlight system using the same
JP2007535615A (ja) * 2005-04-05 2007-12-06 インテマティックス・コーポレーション 新規なシリケート系黄色−緑色蛍光体
US7311858B2 (en) * 2004-08-04 2007-12-25 Intematix Corporation Silicate-based yellow-green phosphors
JP2007335799A (ja) * 2006-06-19 2007-12-27 Toyoda Gosei Co Ltd 発光装置
JP2008024791A (ja) * 2006-07-19 2008-02-07 Toshiba Corp 蛍光体、蛍光体の製造方法および発光装置
JP2008050379A (ja) * 2005-08-10 2008-03-06 Mitsubishi Chemicals Corp 蛍光体及びそれを用いた発光装置
US7349043B2 (en) 2004-05-24 2008-03-25 Nec Corporation Light source, display device, portable terminal device, and ray direction switching element
JP2008517458A (ja) * 2004-10-18 2008-05-22 エルジー イノテック カンパニー リミテッド 蛍光体、その蛍光体を利用した発光素子、及びその蛍光体の製造方法｛Ｐｈｏｓｐｈｏｒ，ｌｉｇｈｔｅｍｉｔｔｉｎｇｄｅｖｉｃｅｂｙｕｓｉｎｇｔｈｅｓａｍｅａｎｄｍａｎｕｆａｃｔｕｒｉｎｇｍｅｔｈｏｄｏｆｔｈｅｓａｍｅ｝
JP2008135707A (ja) * 2006-10-31 2008-06-12 Toshiba Lighting & Technology Corp 発光装置
JP2009506195A (ja) * 2005-08-31 2009-02-12 ルミネイション リミテッド ライアビリティ カンパニー Ｌｅｄに使用する蛍光体及びその配合物
JPWO2007015542A1 (ja) * 2005-08-04 2009-02-19 日亜化学工業株式会社 蛍光体及び発光装置
JP2009515030A (ja) * 2005-11-08 2009-04-09 インテマティックス・コーポレーション シリケート系緑色蛍光体
JP2009079094A (ja) * 2007-09-25 2009-04-16 Toshiba Corp 蛍光体およびそれを用いたｌｅｄランプ
JP2009135539A (ja) * 2009-03-16 2009-06-18 Toyoda Gosei Co Ltd 固体素子デバイスの製造方法
JP2009141374A (ja) * 2003-12-05 2009-06-25 Toshiba Corp 発光装置
US7554129B2 (en) 2004-06-10 2009-06-30 Seoul Semiconductor Co., Ltd. Light emitting device
US7569407B2 (en) 2004-09-21 2009-08-04 Cree, Inc. Methods of coating semiconductor light emitting elements by evaporating solvent from a suspension
JP2009534844A (ja) * 2006-04-20 2009-09-24 クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド 照明装置
US7608202B2 (en) 2006-02-02 2009-10-27 Nichia Corporation Phosphor and light emitting device using the same
JP2009277998A (ja) * 2008-05-16 2009-11-26 Toshiba Lighting & Technology Corp 発光装置
JP2010007085A (ja) * 2005-08-23 2010-01-14 Samsung Electro Mech Co Ltd 複合蛍光体粉末、及びこれを用いた発光装置並びに複合蛍光体粉末の製造方法
JP2010124004A (ja) * 2010-03-08 2010-06-03 Toshiba Corp 発光装置およびその製造方法
JP2010141354A (ja) * 2010-03-08 2010-06-24 Toshiba Corp 発光装置およびその製造方法
US7842961B2 (en) 2005-06-17 2010-11-30 Seoul Semiconductor Co., Ltd. Red phosphor and luminous element using the same
JP2010272894A (ja) * 2010-08-27 2010-12-02 Toshiba Lighting & Technology Corp 発光装置
US7915085B2 (en) 2003-09-18 2011-03-29 Cree, Inc. Molded chip fabrication method
JP2011511960A (ja) * 2008-01-31 2011-04-14 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 表示装置
US7943952B2 (en) 2006-07-31 2011-05-17 Cree, Inc. Method of uniform phosphor chip coating and LED package fabricated using method
US7959321B2 (en) 2005-03-31 2011-06-14 Seoul Semiconductor Co., Ltd. Backlight panel employing white light emitting diode having red phosphor and green phosphor
US7989823B2 (en) 2006-06-08 2011-08-02 Hong-Yuan Technology Co., Ltd. Light emitting system, light emitting apparatus and forming method thereof
US8017035B2 (en) 2004-08-04 2011-09-13 Intematix Corporation Silicate-based yellow-green phosphors
US8070984B2 (en) 2004-06-10 2011-12-06 Seoul Semiconductor Co., Ltd. Luminescent material
WO2012090999A1 (ja) * 2010-12-28 2012-07-05 コニカミノルタオプト株式会社 発光装置の製造方法
US8288936B2 (en) 2007-06-05 2012-10-16 Sharp Kabushiki Kaisha Light emitting apparatus, method for manufacturing the light emitting apparatus, electronic device and cell phone device
JP2012251147A (ja) * 2011-06-03 2012-12-20 Samsung Electronics Co Ltd シリケート蛍光体、シリケート蛍光体の製造方法、及びシリケート蛍光体を含む発光装置
WO2013046674A1 (ja) * 2011-09-27 2013-04-04 コニカミノルタアドバンストレイヤー株式会社 Ｌｅｄ装置の製造方法
US8461756B2 (en) 2008-05-19 2013-06-11 Kabushiki Kaisha Toshiba Linear white light source, and backlight and liquid crystal display device using the same
US8637883B2 (en) 2008-03-19 2014-01-28 Cree, Inc. Low index spacer layer in LED devices
WO2014021006A1 (ja) * 2012-07-30 2014-02-06 住友金属鉱山株式会社 アルカリ土類金属シリケート蛍光体及びその製造方法
CN103883955A (zh) * 2012-12-22 2014-06-25 鸿富锦精密工业（深圳）有限公司 Led车灯
CN103923646A (zh) * 2014-04-10 2014-07-16 上海应用技术学院 一种黄色荧光粉及其制备方法
US8847254B2 (en) 2005-12-15 2014-09-30 Seoul Semiconductor Co., Ltd. Light emitting device
US8878219B2 (en) 2008-01-11 2014-11-04 Cree, Inc. Flip-chip phosphor coating method and devices fabricated utilizing method
US8900482B2 (en) 2004-06-10 2014-12-02 Seoul Semiconductor Co., Ltd. Light emitting device
US8969908B2 (en) 2006-04-04 2015-03-03 Cree, Inc. Uniform emission LED package
US9024349B2 (en) 2007-01-22 2015-05-05 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
KR101524946B1 (ko) * 2013-12-17 2015-06-02 주식회사 효성 고연색성의 백색 형광체 조성물, 및 이를 포함하는 백색 발광 다이오드
US9159888B2 (en) 2007-01-22 2015-10-13 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US9166126B2 (en) 2011-01-31 2015-10-20 Cree, Inc. Conformally coated light emitting devices and methods for providing the same
US9287241B2 (en) 2005-09-30 2016-03-15 Seoul Semiconductor Co., Ltd. Light emitting device and LCD backlight using the same
US9312246B2 (en) 2006-03-31 2016-04-12 Seoul Semiconductor Co., Ltd. Light emitting device and lighting system having the same
JP2018107355A (ja) * 2016-12-27 2018-07-05 日亜化学工業株式会社 発光装置の製造方法
US10295147B2 (en) 2006-11-09 2019-05-21 Cree, Inc. LED array and method for fabricating same
US10505083B2 (en) 2007-07-11 2019-12-10 Cree, Inc. Coating method utilizing phosphor containment structure and devices fabricated using same
US11257996B2 (en) 2007-11-29 2022-02-22 Nichia Corporation Light emitting apparatus and method for producing the same

Families Citing this family (401)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101335322B (zh) 2001-09-03 2010-12-08 松下电器产业株式会社 荧光体层、半导体发光装置及半导体发光元件的制造方法
EP1447853B1 (en) * 2001-10-01 2012-08-08 Panasonic Corporation Semiconductor light emitting element and light emitting device using this
DE10258193B4 (de) * 2002-12-12 2014-04-10 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen von Leuchtdioden-Lichtquellen mit Lumineszenz-Konversionselement
JP3717480B2 (ja) * 2003-01-27 2005-11-16 ローム株式会社 半導体発光装置
US7005679B2 (en) * 2003-05-01 2006-02-28 Cree, Inc. Multiple component solid state white light
KR100537560B1 (ko) * 2003-11-25 2005-12-19 주식회사 메디아나전자 2단계 큐어 공정을 포함하는 백색 발광 다이오드 소자의제조방법
US20050122034A1 (en) * 2003-12-08 2005-06-09 Fuji Photo Film Co., Ltd. Electroluminescent device
KR100540848B1 (ko) * 2004-01-02 2006-01-11 주식회사 메디아나전자 이중 몰드로 구성된 백색 발광다이오드 소자 및 그 제조방법
JP2005197369A (ja) * 2004-01-05 2005-07-21 Toshiba Corp 光半導体装置
US7183588B2 (en) * 2004-01-08 2007-02-27 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Light emission device
DE202005002110U1 (de) * 2004-02-19 2005-05-04 Hong-Yuan Technology Co., Ltd., Yonghe Lichtemittierende Vorrichtung
US7573072B2 (en) 2004-03-10 2009-08-11 Lumination Llc Phosphor and blends thereof for use in LEDs
US7391060B2 (en) 2004-04-27 2008-06-24 Matsushita Electric Industrial Co., Ltd. Phosphor composition and method for producing the same, and light-emitting device using the same
KR100655894B1 (ko) * 2004-05-06 2006-12-08 서울옵토디바이스주식회사 색온도 및 연색성이 우수한 파장변환 발광장치
US7315119B2 (en) * 2004-05-07 2008-01-01 Avago Technologies Ip (Singapore) Pte Ltd Light-emitting device having a phosphor particle layer with specific thickness
KR100623024B1 (ko) * 2004-06-10 2006-09-19 엘지전자 주식회사 고출력 ｌｅｄ 패키지
WO2005124877A2 (en) * 2004-06-18 2005-12-29 Philips Intellectual Property & Standards Gmbh Led with improve light emittance profile
KR100616594B1 (ko) * 2004-07-02 2006-08-28 삼성전기주식회사 색 혼합성이 향상된 ｒｇｂ 발광 다이오드 패키지
US7427366B2 (en) * 2004-07-06 2008-09-23 Sarnoff Corporation Efficient, green-emitting phosphors, and combinations with red-emitting phosphors
US7201495B2 (en) * 2004-08-03 2007-04-10 Philips Lumileds Lighting Company, Llc Semiconductor light emitting device package with cover with flexible portion
US7601276B2 (en) * 2004-08-04 2009-10-13 Intematix Corporation Two-phase silicate-based yellow phosphor
JP2006083219A (ja) * 2004-09-14 2006-03-30 Sharp Corp 蛍光体およびこれを用いた発光装置
KR100880757B1 (ko) * 2004-09-22 2009-02-02 가부시끼가이샤 도시바 발광 장치와 그것을 이용한 백 라이트 및 액정 표시 장치
JP4756841B2 (ja) * 2004-09-29 2011-08-24 スタンレー電気株式会社 半導体発光装置の製造方法
JP4618721B2 (ja) * 2004-09-30 2011-01-26 日東電工株式会社 光学素子及びこれを用いた偏光面光源並びにこれを用いた表示装置
WO2006041178A2 (en) * 2004-10-13 2006-04-20 Matsushita Electric Industrial Co., Ltd. Luminescent light source, method for manufacturing the same, and light-emitting apparatus
JP2006114637A (ja) * 2004-10-13 2006-04-27 Toshiba Corp 半導体発光装置
TW200619765A (en) * 2004-12-10 2006-06-16 Innolux Display Corp Backlight system
JP2006179572A (ja) * 2004-12-21 2006-07-06 Sharp Corp 発光ダイオード、バックライト装置および発光ダイオードの製造方法
JP2006188700A (ja) * 2005-01-03 2006-07-20 Samsung Electro Mech Co Ltd 硫化物系蛍光体の被膜形成方法及び表面コーティング硫化物系蛍光体
US7821023B2 (en) 2005-01-10 2010-10-26 Cree, Inc. Solid state lighting component
US9793247B2 (en) * 2005-01-10 2017-10-17 Cree, Inc. Solid state lighting component
US9070850B2 (en) 2007-10-31 2015-06-30 Cree, Inc. Light emitting diode package and method for fabricating same
US7564180B2 (en) 2005-01-10 2009-07-21 Cree, Inc. Light emission device and method utilizing multiple emitters and multiple phosphors
US8125137B2 (en) 2005-01-10 2012-02-28 Cree, Inc. Multi-chip light emitting device lamps for providing high-CRI warm white light and light fixtures including the same
US7413918B2 (en) * 2005-01-11 2008-08-19 Semileds Corporation Method of making a light emitting diode
TWI303111B (en) * 2005-01-19 2008-11-11 Advanced Optoelectronic Tech Light emitting diode device and manufacturing method thereof
DE102005005263A1 (de) * 2005-02-04 2006-08-10 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Gelb emittierender Leuchtstoff und Lichtquelle mit derartigem Leuchtstoff
TWI521748B (zh) 2005-02-18 2016-02-11 日亞化學工業股份有限公司 具備控制配光特性用之透鏡之發光裝置
EP1854831A4 (en) * 2005-02-23 2014-11-19 Mitsubishi Chem Corp SEMICONDUCTOR LIGHT EMITTING ELEMENT ELEMENT, METHOD FOR PRODUCING SUCH A SEMICONDUCTOR LIGHT MESSAGE DEVICE ELEMENT AND SEMICONDUCTOR LIGHT EMITTING DEVICE USING SUCH A SEMICONDUCTOR LIGHT EMITTING DEVICE ELEMENT
US7276183B2 (en) * 2005-03-25 2007-10-02 Sarnoff Corporation Metal silicate-silica-based polymorphous phosphors and lighting devices
US20060221022A1 (en) * 2005-04-01 2006-10-05 Roger Hajjar Laser vector scanner systems with display screens having optical fluorescent materials
CN100454591C (zh) * 2005-05-10 2009-01-21 光宝科技股份有限公司 包含荧光粉的发光二极管元件
TW200704283A (en) * 2005-05-27 2007-01-16 Lamina Ceramics Inc Solid state LED bridge rectifier light engine
KR101017917B1 (ko) * 2005-06-07 2011-03-04 가부시키가이샤후지쿠라 발광소자 실장용 기판, 발광소자 모듈, 조명장치, 표시장치및 교통 신호기
TW200717866A (en) * 2005-07-29 2007-05-01 Toshiba Kk Semiconductor light emitting device
US20070045643A1 (en) * 2005-08-29 2007-03-01 Shih-Lung Liu Substrate-based white light diode
KR100666211B1 (ko) 2005-09-22 2007-01-09 한국화학연구원 자외선 및 장파장 여기용 규산염계 형광체
JP2007095807A (ja) * 2005-09-27 2007-04-12 Sanyo Electric Co Ltd 発光装置及びその製造方法
TWI383034B (zh) * 2005-10-25 2013-01-21 Intematix Corp 二相以矽酸鹽為主的黃色磷光體
US7537356B2 (en) * 2005-11-11 2009-05-26 Chunghwa Picture Tubes, Ltd. Method for improving color purity of light source module and fluorescent lamp and LED device applying the method
US20120211773A1 (en) * 2005-11-22 2012-08-23 Robert Fleming Light-emitting devices comprising non-linear electrically protective material
US20070125984A1 (en) * 2005-12-01 2007-06-07 Sarnoff Corporation Phosphors protected against moisture and LED lighting devices
US8906262B2 (en) * 2005-12-02 2014-12-09 Lightscape Materials, Inc. Metal silicate halide phosphors and LED lighting devices using the same
US8337071B2 (en) 2005-12-21 2012-12-25 Cree, Inc. Lighting device
KR101332139B1 (ko) * 2005-12-21 2013-11-21 크리, 인코포레이티드 조명 장치 및 조명 방법
CN101351891B (zh) 2005-12-22 2014-11-19 科锐公司 照明装置
JP4828226B2 (ja) * 2005-12-28 2011-11-30 新光電気工業株式会社 発光装置及びその製造方法
US7777322B2 (en) * 2005-12-30 2010-08-17 Dialight Corporation Apparatus for providing a light source that combines different color LEDS
US7918582B2 (en) * 2005-12-30 2011-04-05 Dialight Corporation Signal light using phosphor coated LEDs
KR100658970B1 (ko) 2006-01-09 2006-12-19 주식회사 메디아나전자 복합 파장의 광을 발생시키는 발광 다이오드 소자
US7569406B2 (en) * 2006-01-09 2009-08-04 Cree, Inc. Method for coating semiconductor device using droplet deposition
US8044412B2 (en) 2006-01-20 2011-10-25 Taiwan Semiconductor Manufacturing Company, Ltd Package for a light emitting element
TWI317756B (en) * 2006-02-07 2009-12-01 Coretronic Corp Phosphor, fluorescent gel, and light emitting diode device
KR100735453B1 (ko) * 2006-02-22 2007-07-04 삼성전기주식회사 백색 발광 장치
US8323529B2 (en) * 2006-03-16 2012-12-04 Seoul Semiconductor Co., Ltd. Fluorescent material and light emitting diode using the same
JP4473284B2 (ja) * 2006-03-31 2010-06-02 Ｄｏｗａエレクトロニクス株式会社 発光装置およびその製造方法
KR100797968B1 (ko) * 2006-03-31 2008-01-24 서울반도체 주식회사 발광 다이오드 및 이의 제조 방법
JP2007300069A (ja) 2006-04-04 2007-11-15 Toyoda Gosei Co Ltd 発光素子、この発光素子を用いた発光装置及びこの発光素子の製造方法
US8998444B2 (en) * 2006-04-18 2015-04-07 Cree, Inc. Solid state lighting devices including light mixtures
US9335006B2 (en) * 2006-04-18 2016-05-10 Cree, Inc. Saturated yellow phosphor converted LED and blue converted red LED
US8513875B2 (en) 2006-04-18 2013-08-20 Cree, Inc. Lighting device and lighting method
US9084328B2 (en) 2006-12-01 2015-07-14 Cree, Inc. Lighting device and lighting method
KR101419954B1 (ko) * 2006-04-18 2014-07-16 크리, 인코포레이티드 조명 장치 및 조명 방법
US7821194B2 (en) * 2006-04-18 2010-10-26 Cree, Inc. Solid state lighting devices including light mixtures
US7758221B2 (en) * 2006-05-02 2010-07-20 Koninklijke Philips Electronics N.V. Vehicle headlight
KR100731678B1 (ko) * 2006-05-08 2007-06-22 서울반도체 주식회사 칩형 발광 다이오드 패키지 및 그것을 갖는 발광 장치
CA2647845A1 (en) * 2006-05-30 2007-12-13 University Of Georgia Research Foundation White phosphors, methods of making white phosphors, white light emitting leds, methods of making white light emitting leds, and light bulb structures
BRPI0712439B1 (pt) * 2006-05-31 2019-11-05 Cree, Inc. dispositivo de iluminação e método de iluminação
DE102006026481A1 (de) 2006-06-07 2007-12-13 Siemens Ag Verfahren zum Anordnen einer Pulverschicht auf einem Substrat sowie Schichtaufbau mit mindestens einer Pulverschicht auf einem Substrat
US8120247B2 (en) * 2006-06-21 2012-02-21 Koninklijke Philips Electronics N.V. Light emitting device with a plurality of uniform diameter ceramic spherical color converter elements
US20080012035A1 (en) * 2006-07-11 2008-01-17 Bily Wang LED chip package structure and method for manufacturing the same
US20080029720A1 (en) * 2006-08-03 2008-02-07 Intematix Corporation LED lighting arrangement including light emitting phosphor
JP5205724B2 (ja) * 2006-08-04 2013-06-05 日亜化学工業株式会社 発光装置
US7820075B2 (en) * 2006-08-10 2010-10-26 Intematix Corporation Phosphor composition with self-adjusting chromaticity
CN101554089A (zh) * 2006-08-23 2009-10-07 科锐Led照明科技公司 照明装置和照明方法
KR101258227B1 (ko) 2006-08-29 2013-04-25 서울반도체 주식회사 발광 소자
JP4905009B2 (ja) * 2006-09-12 2012-03-28 豊田合成株式会社 発光装置の製造方法
CN101605867B (zh) 2006-10-03 2013-05-08 渲染材料公司 金属硅酸盐卤化物磷光体以及使用它们的led照明器件
US9048400B2 (en) * 2006-10-12 2015-06-02 Panasonic Intellectual Property Management Co., Ltd. Light-emitting device with a wavelength converting layer and method for manufacturing the same
WO2008058168A2 (en) * 2006-11-07 2008-05-15 Cree Led Lighting Solutions, Inc. Lighting device and lighting method
US8029155B2 (en) 2006-11-07 2011-10-04 Cree, Inc. Lighting device and lighting method
JP4520972B2 (ja) * 2006-11-28 2010-08-11 Ｄｏｗａエレクトロニクス株式会社 発光装置及びその製造方法
US9441793B2 (en) 2006-12-01 2016-09-13 Cree, Inc. High efficiency lighting device including one or more solid state light emitters, and method of lighting
KR20080049947A (ko) * 2006-12-01 2008-06-05 엘지전자 주식회사 방송 시스템, 인터페이스 방법, 및 데이터 구조
EP2089654B1 (en) 2006-12-07 2016-08-03 Cree, Inc. Lighting device and lighting method
US8013506B2 (en) * 2006-12-12 2011-09-06 Prysm, Inc. Organic compounds for adjusting phosphor chromaticity
KR20080065451A (ko) * 2007-01-09 2008-07-14 삼성전기주식회사 Ｌｅｄ 패키지
EP2104797B1 (en) * 2007-01-11 2013-07-31 Panasonic Corporation Light source
US8232564B2 (en) * 2007-01-22 2012-07-31 Cree, Inc. Wafer level phosphor coating technique for warm light emitting diodes
TWI336962B (en) * 2007-02-08 2011-02-01 Touch Micro System Tech White light emitting diode package structure having silicon substrate and method of making the same
KR101079460B1 (ko) * 2007-02-09 2011-11-03 도시바 마테리알 가부시키가이샤 백색 발광 램프와 그것을 사용한 조명 장치
KR100900620B1 (ko) * 2007-02-20 2009-06-02 삼성전기주식회사 백색 발광 장치
JP5476128B2 (ja) * 2007-02-22 2014-04-23 クリー インコーポレイテッド 照明装置、照明方法、光フィルタ、および光をフィルタリングする方法
WO2008116351A1 (en) * 2007-03-26 2008-10-02 He Shan Lide Electronic Enterprise Company Ltd. Method for synthesizing lower color temperature light and lighting device
EP2135001A1 (de) * 2007-04-16 2009-12-23 Goodrich Lighting Systems GmbH Farbverstellbare led-leuchte, insbesondere zur fahrzeuginnenbeleuchtung
WO2008137977A1 (en) 2007-05-08 2008-11-13 Cree Led Lighting Solutions, Inc. Lighting device and lighting method
KR101485206B1 (ko) 2007-05-08 2015-01-27 크리, 인코포레이티드 조명 장치 및 조명 방법
US8038317B2 (en) 2007-05-08 2011-10-18 Cree, Inc. Lighting device and lighting method
EP2458262B1 (en) 2007-05-08 2019-01-23 Cree, Inc. Lighting device and lighting method
KR20100017668A (ko) * 2007-05-08 2010-02-16 크리 엘이디 라이팅 솔루션즈, 인크. 조명 장치 및 조명 방법
KR100818162B1 (ko) * 2007-05-14 2008-03-31 루미마이크로 주식회사 색온도 조절이 가능한 백색 ｌｅｄ 장치
WO2008149256A1 (en) * 2007-06-05 2008-12-11 Koninklijke Philips Electronics N.V. Self-supporting luminescent film and phosphor-enhanced illumination system
JP4519888B2 (ja) * 2007-06-29 2010-08-04 株式会社東芝 半導体受光素子及び光半導体モジュール
JP2009019105A (ja) * 2007-07-11 2009-01-29 Nitto Denko Corp ポリイミドからなる光半導体素子封止用樹脂
US20090029490A1 (en) * 2007-07-26 2009-01-29 Baiocchi Frank A Method of fabricating an electronic device
KR100844919B1 (ko) * 2007-07-27 2008-07-09 세메스 주식회사 경화제 도포 장치
US20090039375A1 (en) * 2007-08-07 2009-02-12 Cree, Inc. Semiconductor light emitting devices with separated wavelength conversion materials and methods of forming the same
US7863635B2 (en) * 2007-08-07 2011-01-04 Cree, Inc. Semiconductor light emitting devices with applied wavelength conversion materials
CN101784636B (zh) 2007-08-22 2013-06-12 首尔半导体株式会社 非化学计量四方铜碱土硅酸盐磷光体及其制备方法
KR101055769B1 (ko) 2007-08-28 2011-08-11 서울반도체 주식회사 비화학양론적 정방정계 알칼리 토류 실리케이트 형광체를채택한 발광 장치
KR101393948B1 (ko) * 2007-09-10 2014-05-12 엘지이노텍 주식회사 발광 다이오드 패키지 및 그 제조방법
WO2009028861A2 (en) * 2007-08-31 2009-03-05 Lg Innotek Co., Ltd Light emitting device package
DE102007046520A1 (de) * 2007-09-28 2009-04-02 Osram Opto Semiconductors Gmbh Lichtemittierendes Flächenelement und Verfahren zum Herstellen eines lichtemittierenden Flächenelementes
EP2210036B1 (en) * 2007-10-10 2016-11-23 Cree, Inc. Lighting device and method of making
TW200921934A (en) * 2007-11-06 2009-05-16 Prodisc Technology Inc Discrete light-emitting diode light source device of wavelength conversion unit
JP2009114415A (ja) * 2007-11-09 2009-05-28 Nitto Denko Corp ポリイミドを含む光半導体素子封止用樹脂およびそれを用いて得られる光半導体装置
EP2221885A4 (en) * 2007-11-19 2013-09-25 Panasonic Corp SEMICONDUCTOR LIGHTING ELEMENT AND METHOD FOR PRODUCING A SEMICONDUCTOR LIGHTING ELEMENT
KR100998233B1 (ko) 2007-12-03 2010-12-07 서울반도체 주식회사 슬림형 ｌｅｄ 패키지
US8487330B2 (en) 2007-12-07 2013-07-16 Kabushiki Kaisha Toshiba Phosphor and LED light-emitting device using the same
TW200925247A (en) * 2007-12-12 2009-06-16 Wang yong qi Three spectral band phosphor powder for using in multilayered agricultural film
US9041285B2 (en) 2007-12-14 2015-05-26 Cree, Inc. Phosphor distribution in LED lamps using centrifugal force
US8167674B2 (en) * 2007-12-14 2012-05-01 Cree, Inc. Phosphor distribution in LED lamps using centrifugal force
DE102008015941A1 (de) * 2007-12-21 2009-06-25 Osram Opto Semiconductors Gmbh Beleuchtungseinrichtung
US7989236B2 (en) * 2007-12-27 2011-08-02 Toyoda Gosei Co., Ltd. Method of making phosphor containing glass plate, method of making light emitting device
EP2246409B1 (en) * 2008-01-21 2014-04-16 Nichia Corporation Light emitting apparatus
US7790230B2 (en) * 2008-01-30 2010-09-07 The United States Of America As Represented By The Secretary Of The Navy Metal chloride seeded growth of electronic and optical materials
CN101230271B (zh) * 2008-01-31 2010-06-02 中国计量学院 一种用于led的红光荧光粉及其制备方法
US8178888B2 (en) * 2008-02-01 2012-05-15 Cree, Inc. Semiconductor light emitting devices with high color rendering
CN101510579B (zh) * 2008-02-13 2011-04-06 财团法人工业技术研究院 发光元件及其制作方法
EP2257999B1 (en) * 2008-03-25 2014-10-01 Kabushiki Kaisha Toshiba Light emitting device, and method and apparatus for manufacturing same
US8350461B2 (en) 2008-03-28 2013-01-08 Cree, Inc. Apparatus and methods for combining light emitters
CN102017206A (zh) * 2008-04-17 2011-04-13 株式会社东芝 白光发射设备、背光灯、液晶显示设备、以及照明设备
WO2009143283A1 (en) * 2008-05-20 2009-11-26 Lightscape Materials, Inc. Silicate-based phosphors and led lighting devices using the same
US8461613B2 (en) * 2008-05-27 2013-06-11 Interlight Optotech Corporation Light emitting device
US8871024B2 (en) 2008-06-05 2014-10-28 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US9157167B1 (en) 2008-06-05 2015-10-13 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US8097081B2 (en) 2008-06-05 2012-01-17 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US20090309127A1 (en) * 2008-06-13 2009-12-17 Soraa, Inc. Selective area epitaxy growth method and structure
US8847249B2 (en) 2008-06-16 2014-09-30 Soraa, Inc. Solid-state optical device having enhanced indium content in active regions
US8303710B2 (en) * 2008-06-18 2012-11-06 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US8240875B2 (en) 2008-06-25 2012-08-14 Cree, Inc. Solid state linear array modules for general illumination
US20090320745A1 (en) * 2008-06-25 2009-12-31 Soraa, Inc. Heater device and method for high pressure processing of crystalline materials
JP5305758B2 (ja) * 2008-06-30 2013-10-02 株式会社東芝 半導体発光装置
EP2312658B1 (en) * 2008-07-03 2018-06-27 Samsung Electronics Co., Ltd. A wavelength-converting light emitting diode (led) chip and method for fabrication of an led device equipped with this chip
WO2011044554A1 (en) 2009-10-09 2011-04-14 Soraa, Inc. Method for synthesis of high quality large area bulk gallium based crystals
WO2010005914A1 (en) * 2008-07-07 2010-01-14 Soraa, Inc. High quality large area bulk non-polar or semipolar gallium based substrates and methods
US8805134B1 (en) 2012-02-17 2014-08-12 Soraa Laser Diode, Inc. Methods and apparatus for photonic integration in non-polar and semi-polar oriented wave-guided optical devices
US8259769B1 (en) 2008-07-14 2012-09-04 Soraa, Inc. Integrated total internal reflectors for high-gain laser diodes with high quality cleaved facets on nonpolar/semipolar GaN substrates
JP5239043B2 (ja) * 2008-07-18 2013-07-17 シャープ株式会社 発光装置および発光装置の製造方法
US8698193B2 (en) * 2008-07-29 2014-04-15 Sharp Kabushiki Kaisha Light emitting device and method for manufacturing the same
JP2011530194A (ja) 2008-08-04 2011-12-15 ソラア インコーポレーテッド 物質および蛍光体を含んだ非分極性あるいは半極性のガリウムを用いた白色灯デバイス
US8284810B1 (en) 2008-08-04 2012-10-09 Soraa, Inc. Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods
US8979999B2 (en) * 2008-08-07 2015-03-17 Soraa, Inc. Process for large-scale ammonothermal manufacturing of gallium nitride boules
US8383432B2 (en) * 2008-08-07 2013-02-26 Sharp Laboratories Of America, Inc. Colloidal-processed silicon particle device
US10036099B2 (en) 2008-08-07 2018-07-31 Slt Technologies, Inc. Process for large-scale ammonothermal manufacturing of gallium nitride boules
US8021481B2 (en) * 2008-08-07 2011-09-20 Soraa, Inc. Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride
US8430958B2 (en) * 2008-08-07 2013-04-30 Soraa, Inc. Apparatus and method for seed crystal utilization in large-scale manufacturing of gallium nitride
US8323405B2 (en) * 2008-08-07 2012-12-04 Soraa, Inc. Process and apparatus for growing a crystalline gallium-containing nitride using an azide mineralizer
US8148801B2 (en) 2008-08-25 2012-04-03 Soraa, Inc. Nitride crystal with removable surface layer and methods of manufacture
FR2935543A1 (fr) * 2008-09-03 2010-03-05 Glory Science Co Ltd Unite photoemissive et procede de fabrication d'une telle unite
US8354679B1 (en) 2008-10-02 2013-01-15 Soraa, Inc. Microcavity light emitting diode method of manufacture
DE102008050643B4 (de) * 2008-10-07 2022-11-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Leuchtmittel
US8455894B1 (en) 2008-10-17 2013-06-04 Soraa, Inc. Photonic-crystal light emitting diode and method of manufacture
US9425172B2 (en) * 2008-10-24 2016-08-23 Cree, Inc. Light emitter array
JP5274211B2 (ja) * 2008-11-13 2013-08-28 スタンレー電気株式会社 色変換発光装置
JP5280818B2 (ja) * 2008-11-28 2013-09-04 シャープ株式会社 発光装置
US8878230B2 (en) 2010-03-11 2014-11-04 Soraa, Inc. Semi-insulating group III metal nitride and method of manufacture
US8987156B2 (en) 2008-12-12 2015-03-24 Soraa, Inc. Polycrystalline group III metal nitride with getter and method of making
US8461071B2 (en) * 2008-12-12 2013-06-11 Soraa, Inc. Polycrystalline group III metal nitride with getter and method of making
US9543392B1 (en) 2008-12-12 2017-01-10 Soraa, Inc. Transparent group III metal nitride and method of manufacture
USRE47114E1 (en) 2008-12-12 2018-11-06 Slt Technologies, Inc. Polycrystalline group III metal nitride with getter and method of making
TWI386728B (zh) * 2009-01-20 2013-02-21 Au Optronics Corp 背光模組與液晶顯示器
US20110100291A1 (en) * 2009-01-29 2011-05-05 Soraa, Inc. Plant and method for large-scale ammonothermal manufacturing of gallium nitride boules
US7967652B2 (en) 2009-02-19 2011-06-28 Cree, Inc. Methods for combining light emitting devices in a package and packages including combined light emitting devices
US8333631B2 (en) * 2009-02-19 2012-12-18 Cree, Inc. Methods for combining light emitting devices in a package and packages including combined light emitting devices
JP4873024B2 (ja) * 2009-02-23 2012-02-08 ウシオ電機株式会社 光源装置
US8247886B1 (en) 2009-03-09 2012-08-21 Soraa, Inc. Polarization direction of optical devices using selected spatial configurations
KR100969160B1 (ko) * 2009-03-10 2010-07-21 엘지이노텍 주식회사 발광소자 및 그 제조방법
WO2010110204A1 (ja) * 2009-03-27 2010-09-30 コニカミノルタオプト株式会社 蛍光体部材、蛍光体部材の製造方法、及び照明装置
US8299473B1 (en) 2009-04-07 2012-10-30 Soraa, Inc. Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors
JP5780605B2 (ja) * 2009-04-13 2015-09-16 ソラア レイザー ダイオード インク レーザ利用のためのｇａｎ基板を用いた光学素子構造
US8837545B2 (en) 2009-04-13 2014-09-16 Soraa Laser Diode, Inc. Optical device structure using GaN substrates and growth structures for laser applications
US8634442B1 (en) 2009-04-13 2014-01-21 Soraa Laser Diode, Inc. Optical device structure using GaN substrates for laser applications
US8791499B1 (en) 2009-05-27 2014-07-29 Soraa, Inc. GaN containing optical devices and method with ESD stability
US8306081B1 (en) 2009-05-27 2012-11-06 Soraa, Inc. High indium containing InGaN substrates for long wavelength optical devices
US8509275B1 (en) 2009-05-29 2013-08-13 Soraa, Inc. Gallium nitride based laser dazzling device and method
US9250044B1 (en) 2009-05-29 2016-02-02 Soraa Laser Diode, Inc. Gallium and nitrogen containing laser diode dazzling devices and methods of use
US9800017B1 (en) 2009-05-29 2017-10-24 Soraa Laser Diode, Inc. Laser device and method for a vehicle
US10108079B2 (en) 2009-05-29 2018-10-23 Soraa Laser Diode, Inc. Laser light source for a vehicle
US9829780B2 (en) 2009-05-29 2017-11-28 Soraa Laser Diode, Inc. Laser light source for a vehicle
US8427590B2 (en) 2009-05-29 2013-04-23 Soraa, Inc. Laser based display method and system
US8921876B2 (en) * 2009-06-02 2014-12-30 Cree, Inc. Lighting devices with discrete lumiphor-bearing regions within or on a surface of remote elements
DE102009030205A1 (de) * 2009-06-24 2010-12-30 Litec-Lp Gmbh Leuchtstoffe mit Eu(II)-dotierten silikatischen Luminophore
KR101055762B1 (ko) * 2009-09-01 2011-08-11 서울반도체 주식회사 옥시오소실리케이트 발광체를 갖는 발광 물질을 채택한 발광 장치
JP5471091B2 (ja) * 2009-07-07 2014-04-16 日亜化学工業株式会社 蛍光体及びこれを備える発光装置並びに蛍光体の製造方法
KR101673913B1 (ko) * 2009-07-20 2016-11-08 삼성전자 주식회사 발광 패키지 및 그 제조 방법
US20120135239A1 (en) * 2009-07-31 2012-05-31 Masayuki Hayashi Deposition material for organic device, and method for producing organic device
US8598809B2 (en) * 2009-08-19 2013-12-03 Cree, Inc. White light color changing solid state lighting and methods
US9000466B1 (en) 2010-08-23 2015-04-07 Soraa, Inc. Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening
US8355418B2 (en) 2009-09-17 2013-01-15 Soraa, Inc. Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates
US8750342B1 (en) 2011-09-09 2014-06-10 Soraa Laser Diode, Inc. Laser diodes with scribe structures
WO2011033910A1 (ja) 2009-09-17 2011-03-24 株式会社東芝 白色発光ランプおよびそれを用いた白色ｌｅｄ照明装置
US9293644B2 (en) 2009-09-18 2016-03-22 Soraa, Inc. Power light emitting diode and method with uniform current density operation
US9583678B2 (en) 2009-09-18 2017-02-28 Soraa, Inc. High-performance LED fabrication
US8933644B2 (en) 2009-09-18 2015-01-13 Soraa, Inc. LED lamps with improved quality of light
CN107256915A (zh) * 2009-09-18 2017-10-17 天空公司 发光二极管器件
WO2011037877A1 (en) 2009-09-25 2011-03-31 Cree, Inc. Lighting device with low glare and high light level uniformity
US8435347B2 (en) 2009-09-29 2013-05-07 Soraa, Inc. High pressure apparatus with stackable rings
US9157025B2 (en) 2009-10-13 2015-10-13 Merck Patent Gmbh Phosphor mixtures comprising europium-doped ortho-silicates
KR101034054B1 (ko) * 2009-10-22 2011-05-12 엘지이노텍 주식회사 발광소자 패키지 및 그 제조방법
US9435493B2 (en) 2009-10-27 2016-09-06 Cree, Inc. Hybrid reflector system for lighting device
US20100276712A1 (en) * 2009-11-03 2010-11-04 Alexander Shaikevitch Light emitting diode with thin multilayer phosphor film
DE112010004694A5 (de) * 2009-12-07 2012-10-31 Tridonic Gmbh & Co. Kg Beleuchtung mit led
US8511851B2 (en) * 2009-12-21 2013-08-20 Cree, Inc. High CRI adjustable color temperature lighting devices
DE102009059798A1 (de) 2009-12-21 2011-06-22 LITEC-LP GmbH, 17489 Mittel zur Verbesserung der Stabilität gegenüber der auftretenden Strahlenbelastung sowie Resistenz gegenüber dem Einfluß von Luftfeuchtigkeit bei Strontiumoxyorthosilikat-Leuchtstoffen
TW201123548A (en) * 2009-12-25 2011-07-01 Ind Tech Res Inst A multi-layer stacked LED package
KR20110076447A (ko) * 2009-12-29 2011-07-06 삼성전자주식회사 발광 장치 및 이를 포함하는 표시 장치
US8740413B1 (en) 2010-02-03 2014-06-03 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US8905588B2 (en) 2010-02-03 2014-12-09 Sorra, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US10147850B1 (en) 2010-02-03 2018-12-04 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
JP2011171436A (ja) * 2010-02-17 2011-09-01 Tdk Corp 電子部品内蔵モジュール及び電子部品内蔵モジュールの製造方法
JP2011181793A (ja) * 2010-03-03 2011-09-15 Koito Mfg Co Ltd 発光装置
US9275979B2 (en) 2010-03-03 2016-03-01 Cree, Inc. Enhanced color rendering index emitter through phosphor separation
JP5795481B2 (ja) 2010-03-05 2015-10-14 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ フォトリソグラフィパターンを形成する方法
CN101787277B (zh) * 2010-03-09 2012-12-05 湘潭大学 一种硅酸盐黄色长余辉荧光体及其制备方法
US8643038B2 (en) * 2010-03-09 2014-02-04 Cree, Inc. Warm white LEDs having high color rendering index values and related luminophoric mediums
US20110220920A1 (en) * 2010-03-09 2011-09-15 Brian Thomas Collins Methods of forming warm white light emitting devices having high color rendering index values and related light emitting devices
CN102414851B (zh) 2010-03-11 2016-06-22 松下知识产权经营株式会社 发光模块、光源装置、液晶显示装置和发光模块的制造方法
JP5718895B2 (ja) * 2010-03-12 2015-05-13 株式会社東芝 白色照明装置
JP2011216849A (ja) * 2010-03-17 2011-10-27 Tdk Corp 電子回路モジュール部品及び電子回路モジュール部品の製造方法
US8710532B2 (en) 2010-03-18 2014-04-29 Kabushiki Kaisha Toshiba White light emitting lamp and white LED lighting apparatus including the same
JP5660662B2 (ja) * 2010-03-19 2015-01-28 東芝ライテック株式会社 照明装置
US9927611B2 (en) 2010-03-29 2018-03-27 Soraa Laser Diode, Inc. Wearable laser based display method and system
TWI394827B (zh) * 2010-04-20 2013-05-01 China Glaze Co Ltd 螢光材料與白光發光裝置
US8450770B2 (en) * 2010-05-11 2013-05-28 Advanced Semiconductor Engineering, Inc. Light emitting package structure
US8451876B1 (en) 2010-05-17 2013-05-28 Soraa, Inc. Method and system for providing bidirectional light sources with broad spectrum
TW201143498A (en) * 2010-05-17 2011-12-01 Au Optronics Corp Light emitting device
WO2011143792A1 (zh) * 2010-05-20 2011-11-24 大连路明发光科技股份有限公司 可剥离型光转换发光膜
US8684559B2 (en) 2010-06-04 2014-04-01 Cree, Inc. Solid state light source emitting warm light with high CRI
US9450143B2 (en) 2010-06-18 2016-09-20 Soraa, Inc. Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices
US9564320B2 (en) 2010-06-18 2017-02-07 Soraa, Inc. Large area nitride crystal and method for making it
US10546846B2 (en) 2010-07-23 2020-01-28 Cree, Inc. Light transmission control for masking appearance of solid state light sources
JP2012033823A (ja) * 2010-08-02 2012-02-16 Stanley Electric Co Ltd 発光装置およびその製造方法
DE102010034322A1 (de) 2010-08-14 2012-02-16 Litec-Lp Gmbh Oberflächenmodifizierter Silikatleuchtstoffe
US9196785B2 (en) 2010-08-14 2015-11-24 Seoul Semiconductor Co., Ltd. Light emitting device having surface-modified quantum dot luminophores
WO2012023737A2 (en) 2010-08-14 2012-02-23 Seoul Semiconductor Co., Ltd. Light emitting device having surface-modified silicate luminophores
US9234129B2 (en) 2010-08-14 2016-01-12 Seoul Semiconductor Co., Ltd. Surface-modified quantum dot luminophores
US9614129B2 (en) 2010-08-14 2017-04-04 Seoul Semiconductor Co., Ltd. Light emitting device having surface-modified luminophores
JP4991958B2 (ja) * 2010-09-06 2012-08-08 株式会社東芝 発光装置
US20120057338A1 (en) * 2010-09-06 2012-03-08 Kabushiki Kaisha Toshiba Light emitting device
KR20120024104A (ko) * 2010-09-06 2012-03-14 서울옵토디바이스주식회사 발광 소자
TWI457418B (zh) * 2010-09-29 2014-10-21 友達光電股份有限公司 白光發光二極體裝置、發光裝置及液晶顯示器
US8610341B2 (en) 2010-10-05 2013-12-17 Intematix Corporation Wavelength conversion component
JP6069205B2 (ja) 2010-10-05 2017-02-01 インテマティックス・コーポレーションＩｎｔｅｍａｔｉｘ Ｃｏｒｐｏｒａｔｉｏｎ フォトルミネッセンス波長変換を備える発光装置及び波長変換コンポーネント
US8604678B2 (en) 2010-10-05 2013-12-10 Intematix Corporation Wavelength conversion component with a diffusing layer
US8957585B2 (en) 2010-10-05 2015-02-17 Intermatix Corporation Solid-state light emitting devices with photoluminescence wavelength conversion
US8614539B2 (en) 2010-10-05 2013-12-24 Intematix Corporation Wavelength conversion component with scattering particles
US9546765B2 (en) 2010-10-05 2017-01-17 Intematix Corporation Diffuser component having scattering particles
US8729559B2 (en) 2010-10-13 2014-05-20 Soraa, Inc. Method of making bulk InGaN substrates and devices thereon
US8654064B2 (en) * 2010-10-18 2014-02-18 Samsung Display Co., Ltd. Backlight having blue light emitting diodes and method of driving same
JP5545866B2 (ja) * 2010-11-01 2014-07-09 シチズン電子株式会社 半導体発光装置
US8816319B1 (en) 2010-11-05 2014-08-26 Soraa Laser Diode, Inc. Method of strain engineering and related optical device using a gallium and nitrogen containing active region
JP2012109397A (ja) * 2010-11-17 2012-06-07 Panasonic Corp 発光装置
DE102010053362B4 (de) 2010-12-03 2021-09-30 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips, strahlungsemittierender Halbleiterchip und strahlungsemittierendes Bauelement
US8556469B2 (en) 2010-12-06 2013-10-15 Cree, Inc. High efficiency total internal reflection optic for solid state lighting luminaires
DE102010054280B4 (de) * 2010-12-13 2025-05-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Erzeugen einer Lumineszenzkonversionsstoffschicht, Zusammensetzung hierfür und Bauelement umfassend eine solche Lumineszenzkonversionsstoffschicht
JP5733743B2 (ja) * 2010-12-15 2015-06-10 日東電工株式会社 光半導体装置
JP5621579B2 (ja) * 2010-12-21 2014-11-12 コニカミノルタ株式会社 蛍光体塗布装置および発光装置の製造方法
DE102010063760B4 (de) * 2010-12-21 2022-12-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement
US8786053B2 (en) 2011-01-24 2014-07-22 Soraa, Inc. Gallium-nitride-on-handle substrate materials and devices and method of manufacture
US9595813B2 (en) 2011-01-24 2017-03-14 Soraa Laser Diode, Inc. Laser package having multiple emitters configured on a substrate member
US9025635B2 (en) 2011-01-24 2015-05-05 Soraa Laser Diode, Inc. Laser package having multiple emitters configured on a support member
US9318875B1 (en) 2011-01-24 2016-04-19 Soraa Laser Diode, Inc. Color converting element for laser diode
US9093820B1 (en) 2011-01-25 2015-07-28 Soraa Laser Diode, Inc. Method and structure for laser devices using optical blocking regions
US9786811B2 (en) 2011-02-04 2017-10-10 Cree, Inc. Tilted emission LED array
US11251164B2 (en) 2011-02-16 2022-02-15 Creeled, Inc. Multi-layer conversion material for down conversion in solid state lighting
WO2012124426A1 (ja) * 2011-03-11 2012-09-20 コニカミノルタオプト株式会社 発光装置の製造方法および蛍光体混合液
JP5498417B2 (ja) * 2011-03-15 2014-05-21 株式会社東芝 半導体発光装置及びその製造方法
JP5746553B2 (ja) * 2011-04-28 2015-07-08 株式会社東芝 基板加工システム、および基板加工プログラム
CN102796522A (zh) * 2011-05-27 2012-11-28 亿广科技(上海)有限公司 荧光粉组合物及使用该荧光粉组合物的白色发光装置
JP2012246462A (ja) * 2011-05-31 2012-12-13 Sharp Corp 発光装置
JP5863291B2 (ja) * 2011-06-28 2016-02-16 株式会社小糸製作所 平面発光モジュール
US10842016B2 (en) 2011-07-06 2020-11-17 Cree, Inc. Compact optically efficient solid state light source with integrated thermal management
USD700584S1 (en) 2011-07-06 2014-03-04 Cree, Inc. LED component
CN102250611B (zh) * 2011-07-26 2013-09-11 彩虹集团公司 一种硅酸盐绿色荧光粉及其制备方法
US8686431B2 (en) 2011-08-22 2014-04-01 Soraa, Inc. Gallium and nitrogen containing trilateral configuration for optical devices
JP2013067710A (ja) * 2011-09-21 2013-04-18 Dexerials Corp 被覆蛍光体の製造方法、被覆蛍光体及び白色光源
CN103828075A (zh) * 2011-09-26 2014-05-28 柯尼卡美能达株式会社 荧光体分散液及led装置的制造方法
US9141157B2 (en) * 2011-10-13 2015-09-22 Texas Instruments Incorporated Molded power supply system having a thermally insulated component
JPWO2013061511A1 (ja) * 2011-10-27 2015-04-02 パナソニック株式会社 発光装置
US8912025B2 (en) 2011-11-23 2014-12-16 Soraa, Inc. Method for manufacture of bright GaN LEDs using a selective removal process
DE102011056813A1 (de) * 2011-12-21 2013-06-27 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Leuchtdiode
US8482104B2 (en) 2012-01-09 2013-07-09 Soraa, Inc. Method for growth of indium-containing nitride films
US9269876B2 (en) 2012-03-06 2016-02-23 Soraa, Inc. Light emitting diodes with low refractive index material layers to reduce light guiding effects
JP2013201274A (ja) * 2012-03-23 2013-10-03 Toshiba Lighting & Technology Corp 照明装置
CN103375708B (zh) * 2012-04-26 2015-10-28 展晶科技(深圳)有限公司 发光二极管灯源装置
CN102769080A (zh) * 2012-05-31 2012-11-07 杭州士兰明芯科技有限公司 一种白光led芯片及其制作方法
US9406849B2 (en) * 2012-08-10 2016-08-02 Koninklijke Philips N.V. Phosphor converted light emitting diode, a lamp and a luminaire
US8971368B1 (en) 2012-08-16 2015-03-03 Soraa Laser Diode, Inc. Laser devices having a gallium and nitrogen containing semipolar surface orientation
US9978904B2 (en) 2012-10-16 2018-05-22 Soraa, Inc. Indium gallium nitride light emitting devices
JP2014086520A (ja) * 2012-10-23 2014-05-12 Sharp Corp 発光装置
KR102090163B1 (ko) 2012-10-26 2020-03-18 삼성디스플레이 주식회사 백라이트 유닛 및 이를 포함하는 표시 장치
TWI545806B (zh) * 2012-10-30 2016-08-11 晶元光電股份有限公司 波長轉換材料及其應用
CN102965102A (zh) * 2012-10-31 2013-03-13 彩虹集团公司 一种硅酸盐绿色荧光粉的制备方法
CN102994082B (zh) * 2012-12-13 2014-07-02 昆明理工大学 一种铋离子掺杂的锗酸盐白色光荧光粉及其制备方法
US8802471B1 (en) 2012-12-21 2014-08-12 Soraa, Inc. Contacts for an n-type gallium and nitrogen substrate for optical devices
US9761763B2 (en) 2012-12-21 2017-09-12 Soraa, Inc. Dense-luminescent-materials-coated violet LEDs
US20140185269A1 (en) 2012-12-28 2014-07-03 Intermatix Corporation Solid-state lamps utilizing photoluminescence wavelength conversion components
CN104871326B (zh) * 2013-01-23 2017-08-08 夏普株式会社 发光装置
US8754435B1 (en) 2013-02-19 2014-06-17 Cooledge Lighting Inc. Engineered-phosphor LED package and related methods
US8933478B2 (en) 2013-02-19 2015-01-13 Cooledge Lighting Inc. Engineered-phosphor LED packages and related methods
US8890196B2 (en) * 2013-03-14 2014-11-18 Goldeneye, Inc. Lightweight self-cooling light sources
TWI627371B (zh) 2013-03-15 2018-06-21 英特曼帝克司公司 光致發光波長轉換組件
JP6076804B2 (ja) * 2013-03-29 2017-02-08 株式会社朝日ラバー 蛍光体含有シートの製造方法
DE102013206225A1 (de) * 2013-04-09 2014-10-09 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
JP6040500B2 (ja) * 2013-04-25 2016-12-07 国立研究開発法人物質・材料研究機構 蛍光体、その製造方法、発光装置および画像表示装置
TWI523293B (zh) * 2013-05-21 2016-02-21 長興材料工業股份有限公司 光色轉換膜及其製造方法
CN104241262B (zh) 2013-06-14 2020-11-06 惠州科锐半导体照明有限公司 发光装置以及显示装置
US9166372B1 (en) 2013-06-28 2015-10-20 Soraa Laser Diode, Inc. Gallium nitride containing laser device configured on a patterned substrate
US8994033B2 (en) 2013-07-09 2015-03-31 Soraa, Inc. Contacts for an n-type gallium and nitrogen substrate for optical devices
JP2016533030A (ja) * 2013-07-24 2016-10-20 クーレッジ ライティング インコーポレイテッド 波長変換材料を組み込む発光ダイおよび関連方法
CN105684170B (zh) * 2013-08-09 2019-09-03 株式会社光波 发光装置
US9410664B2 (en) 2013-08-29 2016-08-09 Soraa, Inc. Circadian friendly LED light source
US9362715B2 (en) 2014-02-10 2016-06-07 Soraa Laser Diode, Inc Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material
US9379525B2 (en) 2014-02-10 2016-06-28 Soraa Laser Diode, Inc. Manufacturable laser diode
US9368939B2 (en) 2013-10-18 2016-06-14 Soraa Laser Diode, Inc. Manufacturable laser diode formed on C-plane gallium and nitrogen material
US9520695B2 (en) 2013-10-18 2016-12-13 Soraa Laser Diode, Inc. Gallium and nitrogen containing laser device having confinement region
JP6384893B2 (ja) * 2013-10-23 2018-09-05 株式会社光波 単結晶蛍光体及び発光装置
KR20160077144A (ko) * 2013-10-28 2016-07-01 지이 라이팅 솔루션스, 엘엘씨 향상된 광증백 및 컬러 선호도를 위한 램프
JP2015119172A (ja) * 2013-11-13 2015-06-25 株式会社日本セラテック 発光素子、発光装置、及びそれらの製造方法
JP6244906B2 (ja) * 2013-12-27 2017-12-13 日亜化学工業株式会社 半導体発光装置
US9209596B1 (en) 2014-02-07 2015-12-08 Soraa Laser Diode, Inc. Manufacturing a laser diode device from a plurality of gallium and nitrogen containing substrates
US9520697B2 (en) 2014-02-10 2016-12-13 Soraa Laser Diode, Inc. Manufacturable multi-emitter laser diode
US9871350B2 (en) 2014-02-10 2018-01-16 Soraa Laser Diode, Inc. Manufacturable RGB laser diode source
KR20150096198A (ko) * 2014-02-14 2015-08-24 삼성전자주식회사 발광 소자 패키지 및 그 제조 방법
US9680067B2 (en) 2014-03-18 2017-06-13 GE Lighting Solutions, LLC Heavily phosphor loaded LED packages having higher stability
US9590148B2 (en) * 2014-03-18 2017-03-07 GE Lighting Solutions, LLC Encapsulant modification in heavily phosphor loaded LED packages for improved stability
CN105431953B (zh) * 2014-06-05 2018-03-16 上海富迪照明电器有限公司 基于固态荧光材料的嵌入式白光led封装结构及其制作方法
KR102221599B1 (ko) * 2014-06-18 2021-03-02 엘지이노텍 주식회사 발광 소자 패키지
US9564736B1 (en) 2014-06-26 2017-02-07 Soraa Laser Diode, Inc. Epitaxial growth of p-type cladding regions using nitrogen gas for a gallium and nitrogen containing laser diode
WO2016001219A1 (en) * 2014-06-30 2016-01-07 Rhodia Operations Suspension of a magnesium silicate, method for making same and use thereof as a phosphor
CN105322071B (zh) * 2014-07-29 2018-08-14 深圳大学 一种芯片级白光led及其制作方法
JP6353763B2 (ja) * 2014-09-30 2018-07-04 新光電気工業株式会社 半導体装置及びその製造方法
JP6280014B2 (ja) * 2014-09-30 2018-02-14 新光電気工業株式会社 半導体装置及びその製造方法
US12126143B2 (en) 2014-11-06 2024-10-22 Kyocera Sld Laser, Inc. Method of manufacture for an ultraviolet emitting optoelectronic device
US9246311B1 (en) 2014-11-06 2016-01-26 Soraa Laser Diode, Inc. Method of manufacture for an ultraviolet laser diode
US9653642B1 (en) 2014-12-23 2017-05-16 Soraa Laser Diode, Inc. Manufacturable RGB display based on thin film gallium and nitrogen containing light emitting diodes
US9666677B1 (en) 2014-12-23 2017-05-30 Soraa Laser Diode, Inc. Manufacturable thin film gallium and nitrogen containing devices
US9646957B2 (en) * 2015-01-14 2017-05-09 Everlight Electronics Co., Ltd. LED packaging structure having stacked arrangement of protection element and LED chip
KR102069081B1 (ko) 2015-06-12 2020-01-22 가부시끼가이샤 도시바 형광체 및 그 제조 방법, 그리고 led 램프
CN106328008B (zh) * 2015-06-30 2019-03-22 光宝光电(常州)有限公司 胶体填充至壳体的制法、发光二极管的数字显示器及制法
JP6472728B2 (ja) 2015-08-04 2019-02-20 日亜化学工業株式会社 発光装置および発光装置を備えたバックライト
US11437775B2 (en) 2015-08-19 2022-09-06 Kyocera Sld Laser, Inc. Integrated light source using a laser diode
US10879673B2 (en) 2015-08-19 2020-12-29 Soraa Laser Diode, Inc. Integrated white light source using a laser diode and a phosphor in a surface mount device package
US11437774B2 (en) 2015-08-19 2022-09-06 Kyocera Sld Laser, Inc. High-luminous flux laser-based white light source
US10938182B2 (en) 2015-08-19 2021-03-02 Soraa Laser Diode, Inc. Specialized integrated light source using a laser diode
US9787963B2 (en) 2015-10-08 2017-10-10 Soraa Laser Diode, Inc. Laser lighting having selective resolution
US9882107B2 (en) * 2016-01-12 2018-01-30 Citizen Electronics Co., Ltd. LED package with covered bonding wire
DE102017201882A1 (de) * 2016-02-09 2017-08-24 Nichia Corporation Leuchtvorrichtung und die Leuchtvorrichtung aufweisende Hintergrundbeleuchtung
WO2017188191A1 (ja) * 2016-04-25 2017-11-02 日本特殊陶業株式会社 波長変換部材、その製造方法および発光装置
DE102016212070A1 (de) * 2016-07-04 2018-01-04 Osram Gmbh Beleuchtungseinrichtung und fahrzeugscheinwerfer mit beleuchtungseinrichtung
CN109000207B (zh) * 2017-06-06 2020-09-15 光宝科技股份有限公司 光源组件
TWI702362B (zh) * 2017-07-13 2020-08-21 東貝光電科技股份有限公司 Ｌｅｄ發光裝置
US10771155B2 (en) 2017-09-28 2020-09-08 Soraa Laser Diode, Inc. Intelligent visible light with a gallium and nitrogen containing laser source
JP7120745B2 (ja) * 2017-09-29 2022-08-17 日本特殊陶業株式会社 光波長変換装置及び光複合装置
US10222474B1 (en) 2017-12-13 2019-03-05 Soraa Laser Diode, Inc. Lidar systems including a gallium and nitrogen containing laser light source
US10763414B2 (en) * 2017-12-18 2020-09-01 Rohm Co., Ltd. Semiconductor light-emitting device
US20210180769A1 (en) * 2017-12-18 2021-06-17 Panasonic Intellectual Property Management Co., Ltd. Light-emitting apparatus
US10551728B1 (en) 2018-04-10 2020-02-04 Soraa Laser Diode, Inc. Structured phosphors for dynamic lighting
CN108550682A (zh) * 2018-05-15 2018-09-18 深圳市泛珠科技发展有限公司 一种led灯
US20190393112A1 (en) * 2018-06-25 2019-12-26 Elizabeth Nofen Encapsulant material containing fluorophores for in-situ visualization of stress in an organic package
KR102245926B1 (ko) * 2018-09-20 2021-04-29 주식회사 엘지화학 유기 발광 소자
WO2020114894A1 (en) * 2018-12-04 2020-06-11 Signify Holding B.V. Crisp white tuning
US11239637B2 (en) 2018-12-21 2022-02-01 Kyocera Sld Laser, Inc. Fiber delivered laser induced white light system
US11421843B2 (en) 2018-12-21 2022-08-23 Kyocera Sld Laser, Inc. Fiber-delivered laser-induced dynamic light system
US20220011483A1 (en) * 2018-12-27 2022-01-13 Nippon Electric Glass Co., Ltd. Wavelength conversion member and light emitting device
US12000552B2 (en) 2019-01-18 2024-06-04 Kyocera Sld Laser, Inc. Laser-based fiber-coupled white light system for a vehicle
US12152742B2 (en) 2019-01-18 2024-11-26 Kyocera Sld Laser, Inc. Laser-based light guide-coupled wide-spectrum light system
US11884202B2 (en) 2019-01-18 2024-01-30 Kyocera Sld Laser, Inc. Laser-based fiber-coupled white light system
US11228158B2 (en) 2019-05-14 2022-01-18 Kyocera Sld Laser, Inc. Manufacturable laser diodes on a large area gallium and nitrogen containing substrate
US10903623B2 (en) 2019-05-14 2021-01-26 Soraa Laser Diode, Inc. Method and structure for manufacturable large area gallium and nitrogen containing substrate
CN110156036B (zh) * 2019-05-30 2020-10-16 东北大学 一种单斜晶re3bo6球形颗粒的制备方法
TWI814842B (zh) * 2019-06-17 2023-09-11 大陸商蘇州鐸力斯科技有限公司 白光發光二極體及包含其之背光模組與顯示裝置
WO2020259950A1 (en) * 2019-06-25 2020-12-30 Lumileds Holding B.V. Phosphor layer for micro-led applications
CN110690357B (zh) * 2019-09-04 2021-01-01 武汉华星光电半导体显示技术有限公司 显示面板
US11362243B2 (en) 2019-10-09 2022-06-14 Lumileds Llc Optical coupling layer to improve output flux in LEDs
US20230104278A1 (en) * 2020-03-24 2023-04-06 Denka Company Limited Phosphor particle, composite, light- emitting device, and self-light-emitting display
US12191626B1 (en) 2020-07-31 2025-01-07 Kyocera Sld Laser, Inc. Vertically emitting laser devices and chip-scale-package laser devices and laser-based, white light emitting devices
US20230093367A1 (en) * 2021-01-06 2023-03-23 Seoul Viosys Co., Ltd. Light emitting device and light emitting module having the same
CN114699992B (zh) * 2022-02-17 2023-01-06 四川马边龙泰磷电有限责任公司 一种硝酸钙热解装置

Citations (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60177028A (ja) * 1984-02-23 1985-09-11 Nok Corp 耐熱性硬化性樹脂成形品の製造法
JPH1077468A (ja) * 1996-08-30 1998-03-24 Kasei Optonix Co Ltd 蛍光体
WO1998012757A1 (de) * 1996-09-20 1998-03-26 Siemens Aktiengesellschaft Wellenlängenkonvertierende vergussmasse, deren verwendung und verfahren zu deren herstellung
JPH1187778A (ja) * 1997-09-02 1999-03-30 Toshiba Corp 半導体発光素子、半導体発光装置およびその製造方法
JPH11145519A (ja) * 1997-09-02 1999-05-28 Toshiba Corp 半導体発光素子、半導体発光装置および画像表示装置
JPH11233831A (ja) * 1998-02-17 1999-08-27 Nichia Chem Ind Ltd 発光ダイオード及びその形成方法
JP2000017257A (ja) * 1998-06-30 2000-01-18 Nichia Chem Ind Ltd 蛍光体及びそれを用いた発光スクリーン
JP2000031547A (ja) * 1998-07-09 2000-01-28 Stanley Electric Co Ltd 面状光源
JP2000087030A (ja) * 1998-09-11 2000-03-28 Matsushita Electric Ind Co Ltd プラズマディスプレイパネル用蛍光体及び蛍光体インキ
JP2000147766A (ja) * 1998-11-17 2000-05-26 Dainippon Printing Co Ltd 蛍光体パターン形成用組成物及びプラズマディスプレイ背面板の製造方法
JP2000150966A (ja) * 1998-11-16 2000-05-30 Matsushita Electronics Industry Corp 半導体発光装置及びその製造方法
JP2000228544A (ja) * 1999-02-05 2000-08-15 Sharp Corp 半導体発光装置
JP2000345152A (ja) * 1999-06-07 2000-12-12 Nichia Chem Ind Ltd 黄色発光残光性フォトルミネッセンス蛍光体
JP2000349346A (ja) * 1999-06-07 2000-12-15 Sanken Electric Co Ltd 半導体発光装置
JP2001015817A (ja) * 1999-04-26 2001-01-19 Matsushita Electronics Industry Corp 複合発光素子と発光装置及びその製造方法
JP2001148516A (ja) * 1999-09-09 2001-05-29 Nichia Chem Ind Ltd 発光ダイオード及びその製造方法
JP2001196639A (ja) * 2000-01-12 2001-07-19 Sanyo Electric Co Ltd Ｌｅｄ発光素子及びその製造方法
JP2001228809A (ja) * 1999-12-09 2001-08-24 Fuji Photo Film Co Ltd ディスプレイ装置

Family Cites Families (137)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4481422A (en) * 1969-06-12 1984-11-06 The United States Of America As Represented By The Secretary Of The Army Intrusion detecting camouflage fluorescent coating
JPS57158923A (en) * 1981-03-27 1982-09-30 Hitachi Ltd Method for forming fluorescent screen of cathode-ray tube
IT1196142B (it) * 1984-06-11 1988-11-10 Sicor Spa Procedimento per la preparazione di 16,17-acetali di derivati pregnanici e nuovi composti ottenuti
US4727512A (en) * 1984-12-06 1988-02-23 Computer Design & Applications, Inc. Interface adaptor emulating magnetic tape drive
US4775969A (en) * 1986-05-15 1988-10-04 Aquidneck Systems International, Inc. Optical disk storage format, method and apparatus for emulating a magnetic tape drive
US5872669A (en) * 1988-03-01 1999-02-16 Seagate Technology, Inc. Disk drive apparatus with power conservation capability
US5455926A (en) * 1988-04-05 1995-10-03 Data/Ware Development, Inc. Virtual addressing of optical storage media as magnetic tape equivalents
US5438674A (en) * 1988-04-05 1995-08-01 Data/Ware Development, Inc. Optical disk system emulating magnetic tape units
JPH0823643B2 (ja) * 1989-03-28 1996-03-06 シャープ株式会社 アクティブマトリクス表示装置
US5235695A (en) * 1989-06-28 1993-08-10 International Business Machines Corporation Apparatus for efficient utilization of removable data recording media
US5673412A (en) * 1990-07-13 1997-09-30 Hitachi, Ltd. Disk system and power-on sequence for the same
US5274799A (en) * 1991-01-04 1993-12-28 Array Technology Corporation Storage device array architecture with copyback cache
US5358668A (en) 1991-07-08 1994-10-25 Agfa-Gevaert, N.V. Photostimulable phosphor and its use in radiography
ES2100275T3 (es) * 1992-01-07 1997-06-16 Philips Electronics Nv Lampara de descarga en mercurio de baja presion.
EP0552513B1 (en) 1992-01-07 1996-12-04 Koninklijke Philips Electronics N.V. Low-pressure mercury discharge lamp
JPH05287082A (ja) 1992-04-08 1993-11-02 Nitto Denko Corp 超微粒子分散樹脂組成物の製法
US5297124A (en) * 1992-04-24 1994-03-22 Miltope Corporation Tape drive emulation system for a disk drive
WO1994025913A2 (en) * 1993-04-30 1994-11-10 Novadigm, Inc. Method and apparatus for enterprise desktop management
JPH086854A (ja) * 1993-12-23 1996-01-12 Unisys Corp アウトボードファイルキャッシュ外部処理コンプレックス
US5485321A (en) * 1993-12-29 1996-01-16 Storage Technology Corporation Format and method for recording optimization
US5864346A (en) * 1994-09-12 1999-01-26 Nintendo Co., Ltd. Picture display unit and image display system
US5774292A (en) * 1995-04-13 1998-06-30 International Business Machines Corporation Disk drive power management system and method
US5666538A (en) * 1995-06-07 1997-09-09 Ast Research, Inc. Disk power manager for network servers
JP3067592B2 (ja) * 1995-06-30 2000-07-17 ヤマハ株式会社 通信端末装置
JPH0917350A (ja) 1995-06-30 1997-01-17 Ryuji Ozawa 高解像力を持った陰極線管の蛍光膜
US5774643A (en) * 1995-10-13 1998-06-30 Digital Equipment Corporation Enhanced raid write hole protection and recovery
US5774715A (en) * 1996-03-27 1998-06-30 Sun Microsystems, Inc. File system level compression using holes
US5673382A (en) * 1996-05-30 1997-09-30 International Business Machines Corporation Automated management of off-site storage volumes for disaster recovery
US5777433A (en) 1996-07-11 1998-07-07 Hewlett-Packard Company High refractive index package material and a light emitting device encapsulated with such material
JP2927279B2 (ja) 1996-07-29 1999-07-28 日亜化学工業株式会社 発光ダイオード
TW383508B (en) * 1996-07-29 2000-03-01 Nichia Kagaku Kogyo Kk Light emitting device and display
US6021408A (en) * 1996-09-12 2000-02-01 Veritas Software Corp. Methods for operating a log device
CA2221216A1 (en) * 1996-11-15 1998-05-15 Mark Squibb System and apparatus for merging a write event journal and an original storage to produce an updated storage using an event map
JPH10163535A (ja) 1996-11-27 1998-06-19 Kasei Optonix Co Ltd 白色発光素子
US5809511A (en) * 1997-01-02 1998-09-15 International Business Machines Corporation Outboard data migration in a volume stacking library
US5875479A (en) * 1997-01-07 1999-02-23 International Business Machines Corporation Method and means for making a dual volume level copy in a DASD storage subsystem subject to updating during the copy interval
US5949970A (en) * 1997-01-07 1999-09-07 Unisys Corporation Dual XPCS for disaster recovery
US6041329A (en) * 1997-05-29 2000-03-21 International Business Machines Corporation Automated message processing system configured to automatically manage introduction of removable data storage media into media library
US6098148A (en) * 1997-05-29 2000-08-01 International Business Machines Corporation Storage and access of data using volume trailer
US6578120B1 (en) * 1997-06-24 2003-06-10 International Business Machines Corporation Synchronization and resynchronization of loosely-coupled copy operations between a primary and a remote secondary DASD volume under concurrent updating
US6496791B1 (en) * 1997-07-09 2002-12-17 Neville Yates Interfaces for an open systems server providing tape drive emulation
US5974424A (en) * 1997-07-11 1999-10-26 International Business Machines Corporation Parallel file system and method with a metadata node
JP3282176B2 (ja) 1997-07-14 2002-05-13 日亜化学工業株式会社 発光ダイオードの形成方法
JP3985852B2 (ja) 1997-07-17 2007-10-03 株式会社日立プラズマパテントライセンシング プラズマディスプレイパネル
US6128698A (en) * 1997-08-04 2000-10-03 Exabyte Corporation Tape drive emulator for removable disk drive
US6389503B1 (en) * 1997-08-04 2002-05-14 Exabyte Corporation Tape drive emulation by removable disk drive and media formatted therefor
US6173359B1 (en) * 1997-08-27 2001-01-09 International Business Machines Corp. Storage and access to scratch mounts in VTS system
US6044442A (en) * 1997-11-21 2000-03-28 International Business Machines Corporation External partitioning of an automated data storage library into multiple virtual libraries for access by a plurality of hosts
US6304880B1 (en) * 1997-12-12 2001-10-16 International Business Machines Corporation Automated reclamation scheduling override in a virtual tape server
US6105037A (en) * 1997-12-12 2000-08-15 International Business Machines Corporation Apparatus for performing automated reconcile control in a virtual tape system
US6023709A (en) * 1997-12-15 2000-02-08 International Business Machines Corporation Automated file error classification and correction in a hierarchical storage management system
US6061309A (en) * 1997-12-17 2000-05-09 International Business Machines Corporation Method and apparatus for maintaining states of an operator panel and convenience input/output station of a dual library manager/dual accessor controller system in the event of a failure to one controller
US6029179A (en) * 1997-12-18 2000-02-22 International Business Machines Corporation Automated read-only volume processing in a virtual tape server
US6725331B1 (en) * 1998-01-07 2004-04-20 Emc Corporation Method and apparatus for managing the dynamic assignment resources in a data storage system
US6131148A (en) * 1998-01-26 2000-10-10 International Business Machines Corporation Snapshot copy of a secondary volume of a PPRC pair
US6294800B1 (en) * 1998-02-06 2001-09-25 General Electric Company Phosphors for white light generation from UV emitting diodes
JP3307316B2 (ja) 1998-02-27 2002-07-24 サンケン電気株式会社 半導体発光装置
JPH11246510A (ja) 1998-03-04 1999-09-14 New Japan Chem Co Ltd 希土類錯体
US6408369B1 (en) * 1998-03-12 2002-06-18 Emc Corporation Internal copy for a storage controller
US6260110B1 (en) * 1998-04-02 2001-07-10 Emc Corporation Virtual tape system with variable size
US6070224A (en) * 1998-04-02 2000-05-30 Emc Corporation Virtual tape system
US6177030B1 (en) 1998-04-23 2001-01-23 Konica Corporation Stimulable phosphor and radiation image conversion panel by use thereof
US6269423B1 (en) * 1998-05-13 2001-07-31 International Business Machines Corporation Method and apparatus for providing improved caching for a virtual tape server
US6067587A (en) * 1998-06-17 2000-05-23 Sutmyn Storage Corporation Method for serializing and synchronizing data packets by utilizing a physical lock system and a control data structure for mutual exclusion lock
US20020095557A1 (en) * 1998-06-22 2002-07-18 Colin Constable Virtual data storage (VDS) system
US6353837B1 (en) * 1998-06-30 2002-03-05 Emc Corporation Method and apparatus providing mass storage access from systems using different meta-data formats
JP3618552B2 (ja) * 1998-06-30 2005-02-09 富士通株式会社 記憶装置
US6289425B1 (en) * 1998-07-01 2001-09-11 Storage Technology Corporation Method for verifying availability of data space in virtual tape system
JP2000020187A (ja) * 1998-07-07 2000-01-21 Fujitsu Ltd 情報処理装置及び電力制御方法並びに記録媒体
WO2000003408A1 (en) 1998-07-08 2000-01-20 Matsushita Electric Industrial Co., Ltd. Plasma display panel production method suitable for producing high-image-quality plasma display panel, production device and fluorescent ink
JP3645422B2 (ja) 1998-07-14 2005-05-11 東芝電子エンジニアリング株式会社 発光装置
US6049848A (en) * 1998-07-15 2000-04-11 Sutmyn Storage Corporation System and method for performing high-speed tape positioning operations
US6195730B1 (en) * 1998-07-24 2001-02-27 Storage Technology Corporation Computer system with storage device mapping input/output processor
US6269431B1 (en) * 1998-08-13 2001-07-31 Emc Corporation Virtual storage and block level direct access of secondary storage for recovery of backup data
JP2000063682A (ja) 1998-08-25 2000-02-29 New Japan Chem Co Ltd 希土類錯体を含む樹脂組成物及び成形体
JP3507710B2 (ja) * 1998-09-11 2004-03-15 株式会社東芝 電気機器における電源回路
US6266784B1 (en) * 1998-09-15 2001-07-24 International Business Machines Corporation Direct storage of recovery plan file on remote server for disaster recovery and storage management thereof
JP2000160155A (ja) 1998-09-24 2000-06-13 Konica Corp 希土類付活アルカリ土類金属弗化ハロゲン化物系輝尽性蛍光体、その防湿処理方法、放射線像変換パネルおよび輝尽性蛍光体の製造方法
KR100702273B1 (ko) 1998-09-28 2007-03-30 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 조명 시스템
US6207077B1 (en) 2000-02-18 2001-03-27 Orion 21 A.D. Pty Ltd Luminescent gel coats and moldable resins
US6458512B1 (en) * 1998-10-13 2002-10-01 3M Innovative Properties Company Oxynitride encapsulated electroluminescent phosphor particles
US6247096B1 (en) * 1998-11-02 2001-06-12 International Business Machines Corporation Handling eject requests of logical volumes in a data storage subsystem
US6429583B1 (en) * 1998-11-30 2002-08-06 General Electric Company Light emitting device with ba2mgsi2o7:eu2+, ba2sio4:eu2+, or (srxcay ba1-x-y)(a1zga1-z)2sr:eu2+phosphors
JP3968933B2 (ja) 1998-12-25 2007-08-29 コニカミノルタホールディングス株式会社 エレクトロルミネッセンス素子
JP2000208822A (ja) 1999-01-11 2000-07-28 Matsushita Electronics Industry Corp 半導体発光装置
US6351069B1 (en) * 1999-02-18 2002-02-26 Lumileds Lighting, U.S., Llc Red-deficiency-compensating phosphor LED
US6680569B2 (en) * 1999-02-18 2004-01-20 Lumileds Lighting U.S. Llc Red-deficiency compensating phosphor light emitting device
US6336173B1 (en) * 1999-04-01 2002-01-01 International Business Machines Corporation Storing and tracking multiple copies of data in data storage libraries
US6360232B1 (en) * 1999-06-02 2002-03-19 International Business Machines Corporation Disaster recovery method for a removable media library
JP3690968B2 (ja) 1999-06-30 2005-08-31 日亜化学工業株式会社 発光装置及びその形成方法
JP2001026416A (ja) 1999-07-12 2001-01-30 Kansai Research Institute 粒子分散体
DE19951790A1 (de) * 1999-10-27 2001-05-03 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Leuchtstoff für Lichtquellen und zugehörige Lichtquelle
WO2001008453A1 (de) * 1999-07-23 2001-02-01 Osram Opto Semiconductors Gmbh & Co. Ohg Leuchtstoffanordnung, wellenlängenkonvertierende vergussmasse und lichtquelle
US6336163B1 (en) * 1999-07-30 2002-01-01 International Business Machines Corporation Method and article of manufacture for inserting volumes for import into a virtual tape server
JP2001144331A (ja) 1999-09-02 2001-05-25 Toyoda Gosei Co Ltd 発光装置
US7203732B2 (en) * 1999-11-11 2007-04-10 Miralink Corporation Flexible remote data mirroring
JP4045710B2 (ja) 1999-12-16 2008-02-13 松下電器産業株式会社 半導体発光装置の製造方法
JP3763719B2 (ja) 2000-02-02 2006-04-05 独立行政法人科学技術振興機構 オキシ窒化物ガラスを母体材料とした蛍光体
US6615365B1 (en) * 2000-03-11 2003-09-02 Powerquest Corporation Storing a computer disk image within an imaged partition
JP4406490B2 (ja) 2000-03-14 2010-01-27 株式会社朝日ラバー 発光ダイオード
US6621211B1 (en) * 2000-05-15 2003-09-16 General Electric Company White light emitting phosphor blends for LED devices
JP2001337865A (ja) * 2000-05-25 2001-12-07 Minolta Co Ltd ファイル生成方法およびファイル管理方法ならびにファイル
WO2001095585A2 (en) * 2000-06-02 2001-12-13 Inrange Technologies Corporation Message queue server system
US6766520B1 (en) * 2000-06-08 2004-07-20 Unisys Corporation Tape drive emulation software objects, and emulation of other peripheral systems for computers
DE10036940A1 (de) 2000-07-28 2002-02-07 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Lumineszenz-Konversions-LED
JP2002050797A (ja) * 2000-07-31 2002-02-15 Toshiba Corp 半導体励起蛍光体発光装置およびその製造方法
US6635363B1 (en) * 2000-08-21 2003-10-21 General Electric Company Phosphor coating with self-adjusting distance from LED chip
JP2002074811A (ja) * 2000-08-30 2002-03-15 Nec Corp 電源供給制御システム及び電源供給制御方法
US6614103B1 (en) * 2000-09-01 2003-09-02 General Electric Company Plastic packaging of LED arrays
US6694447B1 (en) * 2000-09-29 2004-02-17 Sun Microsystems, Inc. Apparatus and method for increasing application availability during a disaster fail-back
JP3725413B2 (ja) 2000-10-06 2005-12-14 松下電器産業株式会社 半導体発光装置
US6557089B1 (en) * 2000-11-28 2003-04-29 International Business Machines Corporation Backup by ID-suppressed instant virtual copy then physical backup copy with ID reintroduced
US20020083265A1 (en) * 2000-12-26 2002-06-27 Brough Farrell Lynn Methods for increasing cache capacity
AT410266B (de) 2000-12-28 2003-03-25 Tridonic Optoelectronics Gmbh Lichtquelle mit einem lichtemittierenden element
US20020084745A1 (en) * 2000-12-29 2002-07-04 Airma Optoelectronics Corporation Light emitting diode with light conversion by dielectric phosphor powder
US7007141B2 (en) * 2001-01-30 2006-02-28 Data Domain, Inc. Archival data storage system and method
US20020117672A1 (en) * 2001-02-23 2002-08-29 Ming-Sung Chu High-brightness blue-light emitting crystalline structure
JP3629216B2 (ja) * 2001-03-08 2005-03-16 株式会社東芝 デフラグメンテーション機能を有するディスク記憶システム、及び同システムにおけるデフラグメンテーション方法
US6779057B2 (en) * 2001-04-18 2004-08-17 International Business Machines Corporation Method, system, and program for indicating data transmitted to an input/output device as committed
US6915397B2 (en) * 2001-06-01 2005-07-05 Hewlett-Packard Development Company, L.P. System and method for generating point in time storage copy
US6642652B2 (en) * 2001-06-11 2003-11-04 Lumileds Lighting U.S., Llc Phosphor-converted light emitting device
US6779058B2 (en) * 2001-07-13 2004-08-17 International Business Machines Corporation Method, system, and program for transferring data between storage devices
US6625704B2 (en) * 2001-08-08 2003-09-23 Sangate Systems, Inc. Data backup method and system using snapshot and virtual tape
JP2007329511A (ja) 2001-09-03 2007-12-20 Matsushita Electric Ind Co Ltd 半導体発光装置
CN101335322B (zh) * 2001-09-03 2010-12-08 松下电器产业株式会社 荧光体层、半导体发光装置及半导体发光元件的制造方法
JP3756930B2 (ja) 2001-09-03 2006-03-22 松下電器産業株式会社 半導体発光デバイスの製造方法
US6877016B1 (en) * 2001-09-13 2005-04-05 Unisys Corporation Method of capturing a physically consistent mirrored snapshot of an online database
US7072910B2 (en) * 2002-03-22 2006-07-04 Network Appliance, Inc. File folding technique
TWI226357B (en) * 2002-05-06 2005-01-11 Osram Opto Semiconductors Gmbh Wavelength-converting reaction-resin, its production method, light-radiating optical component and light-radiating semiconductor-body
JP4216006B2 (ja) * 2002-06-14 2009-01-28 株式会社日立製作所 記憶装置の制御方法
US7100089B1 (en) * 2002-09-06 2006-08-29 3Pardata, Inc. Determining differences between snapshots
US7127577B2 (en) * 2003-01-21 2006-10-24 Equallogic Inc. Distributed snapshot process
US7055009B2 (en) * 2003-03-21 2006-05-30 International Business Machines Corporation Method, system, and program for establishing and maintaining a point-in-time copy
US7111136B2 (en) * 2003-06-26 2006-09-19 Hitachi, Ltd. Method and apparatus for backup and recovery system using storage based journaling
US7032126B2 (en) * 2003-07-08 2006-04-18 Softek Storage Solutions Corporation Method and apparatus for creating a storage pool by dynamically mapping replication schema to provisioned storage volumes
US7096331B1 (en) * 2003-09-29 2006-08-22 Emc Corporation System and method for managing data associated with copying and replication procedures in a data storage environment
JP4440208B2 (ja) 2005-12-15 2010-03-24 日本電信電話株式会社 光クロスコネクト装置の光パス切り替え方法および光パス切り替え制御装置

Patent Citations (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60177028A (ja) * 1984-02-23 1985-09-11 Nok Corp 耐熱性硬化性樹脂成形品の製造法
JPH1077468A (ja) * 1996-08-30 1998-03-24 Kasei Optonix Co Ltd 蛍光体
WO1998012757A1 (de) * 1996-09-20 1998-03-26 Siemens Aktiengesellschaft Wellenlängenkonvertierende vergussmasse, deren verwendung und verfahren zu deren herstellung
JPH1187778A (ja) * 1997-09-02 1999-03-30 Toshiba Corp 半導体発光素子、半導体発光装置およびその製造方法
JPH11145519A (ja) * 1997-09-02 1999-05-28 Toshiba Corp 半導体発光素子、半導体発光装置および画像表示装置
JPH11233831A (ja) * 1998-02-17 1999-08-27 Nichia Chem Ind Ltd 発光ダイオード及びその形成方法
JP2000017257A (ja) * 1998-06-30 2000-01-18 Nichia Chem Ind Ltd 蛍光体及びそれを用いた発光スクリーン
JP2000031547A (ja) * 1998-07-09 2000-01-28 Stanley Electric Co Ltd 面状光源
JP2000087030A (ja) * 1998-09-11 2000-03-28 Matsushita Electric Ind Co Ltd プラズマディスプレイパネル用蛍光体及び蛍光体インキ
JP2000150966A (ja) * 1998-11-16 2000-05-30 Matsushita Electronics Industry Corp 半導体発光装置及びその製造方法
JP2000147766A (ja) * 1998-11-17 2000-05-26 Dainippon Printing Co Ltd 蛍光体パターン形成用組成物及びプラズマディスプレイ背面板の製造方法
JP2000228544A (ja) * 1999-02-05 2000-08-15 Sharp Corp 半導体発光装置
JP2001015817A (ja) * 1999-04-26 2001-01-19 Matsushita Electronics Industry Corp 複合発光素子と発光装置及びその製造方法
JP2000345152A (ja) * 1999-06-07 2000-12-12 Nichia Chem Ind Ltd 黄色発光残光性フォトルミネッセンス蛍光体
JP2000349346A (ja) * 1999-06-07 2000-12-15 Sanken Electric Co Ltd 半導体発光装置
JP2001148516A (ja) * 1999-09-09 2001-05-29 Nichia Chem Ind Ltd 発光ダイオード及びその製造方法
JP2001228809A (ja) * 1999-12-09 2001-08-24 Fuji Photo Film Co Ltd ディスプレイ装置
JP2001196639A (ja) * 2000-01-12 2001-07-19 Sanyo Electric Co Ltd Ｌｅｄ発光素子及びその製造方法

Cited By (121)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10319091A1 (de) * 2003-04-28 2004-09-09 Siemens Ag Leuchtstoff zum Umwandeln einer Primärstrahlung in eine Sekundärstrahlung
JP2007500776A (ja) * 2003-05-17 2007-01-18 フォスファーテック コーポレーション シリケート蛍光りん光物質を有する発光装置
JP2005085895A (ja) * 2003-09-05 2005-03-31 Nichia Chem Ind Ltd 光源装置及び照明装置
JP2007506264A (ja) * 2003-09-15 2007-03-15 コニンクリユケ フィリップス エレクトロニクス エヌ．ブイ． 白色発光照明システム
US9093616B2 (en) 2003-09-18 2015-07-28 Cree, Inc. Molded chip fabrication method and apparatus
US10164158B2 (en) 2003-09-18 2018-12-25 Cree, Inc. Molded chip fabrication method and apparatus
US10546978B2 (en) 2003-09-18 2020-01-28 Cree, Inc. Molded chip fabrication method and apparatus
US9105817B2 (en) 2003-09-18 2015-08-11 Cree, Inc. Molded chip fabrication method and apparatus
US7915085B2 (en) 2003-09-18 2011-03-29 Cree, Inc. Molded chip fabrication method
JP2007510040A (ja) * 2003-10-29 2007-04-19 ゲルコアー リミテッド ライアビリティ カンパニー スペクトル特性が向上したガーネット蛍光体材料
WO2005045881A1 (en) * 2003-11-11 2005-05-19 Koninklijke Philips Electronics N.V. Low-pressure vapor discharge lamp with a mercury-free gas filling
US7278756B2 (en) 2003-11-14 2007-10-09 Hon Hai Precision Industry Co., Ltd. Light-emitting diode and backlight system using the same
JP2009141374A (ja) * 2003-12-05 2009-06-25 Toshiba Corp 発光装置
WO2005071039A1 (ja) * 2004-01-26 2005-08-04 Kyocera Corporation 波長変換器、発光装置、波長変換器の製造方法および発光装置の製造方法
JP2005277127A (ja) * 2004-03-25 2005-10-06 Stanley Electric Co Ltd 発光デバイス
WO2005098973A1 (en) * 2004-04-07 2005-10-20 Lg Innotek Co., Ltd Light emitting device and phosphor for the same
WO2005098972A1 (en) * 2004-04-07 2005-10-20 Lg Innotek Co., Ltd Light emitting device and phosphor for the same
JP2006527501A (ja) * 2004-04-07 2006-11-30 エルジー イノテック カンパニー リミテッド 発光素子及び発光素子の蛍光体
US7531956B2 (en) 2004-04-07 2009-05-12 Lg Innotek Co., Ltd. Light emitting device and phosphor for the same
JP2007027796A (ja) * 2004-04-27 2007-02-01 Matsushita Electric Ind Co Ltd 発光装置
JP2013021339A (ja) * 2004-04-27 2013-01-31 Panasonic Corp 発光装置
WO2005106978A1 (ja) * 2004-04-28 2005-11-10 Matsushita Electric Industrial Co., Ltd. 発光装置およびその製造方法
US10916684B2 (en) 2004-05-13 2021-02-09 Seoul Semiconductor Co., Ltd. Light emitting device including RGB light emitting diodes and phosphor
US10672956B2 (en) 2004-05-13 2020-06-02 Seoul Semiconductor Co., Ltd. Light emitting device including RGB light emitting diodes and phosphor
US11605762B2 (en) 2004-05-13 2023-03-14 Seoul Semiconductor Co., Ltd. Light emitting device including RGB light emitting diodes and phosphor
US10186642B2 (en) 2004-05-13 2019-01-22 Seoul Semiconductor Co., Ltd. Light emitting device including RGB light emitting diodes and phosphor
WO2005112137A1 (en) * 2004-05-13 2005-11-24 Seoul Opto-Device Co., Ltd. Light emitting device including rgb light emitting diodes and phosphor
US9209162B2 (en) 2004-05-13 2015-12-08 Seoul Semiconductor Co., Ltd. Light emitting device including RGB light emitting diodes and phosphor
US7728925B2 (en) 2004-05-24 2010-06-01 Nec Corporation Light source, display device, portable terminal device, and ray direction switching element
US7499123B2 (en) 2004-05-24 2009-03-03 Nec Corporation Planar light source, display device, portable terminal device, and ray direction switching element
US7630026B2 (en) 2004-05-24 2009-12-08 Nec Corporation Planar light source, display device, portable terminal device, and ray direction switching element
US7349043B2 (en) 2004-05-24 2008-03-25 Nec Corporation Light source, display device, portable terminal device, and ray direction switching element
US7929077B2 (en) 2004-05-24 2011-04-19 Nec Corporation Light source, display device, portable terminal device, and ray direction switching element
US7554129B2 (en) 2004-06-10 2009-06-30 Seoul Semiconductor Co., Ltd. Light emitting device
US8070984B2 (en) 2004-06-10 2011-12-06 Seoul Semiconductor Co., Ltd. Luminescent material
US8900482B2 (en) 2004-06-10 2014-12-02 Seoul Semiconductor Co., Ltd. Light emitting device
US8883040B2 (en) 2004-06-10 2014-11-11 Seoul Semiconductor Co., Ltd. Luminescent material
JP2005353888A (ja) * 2004-06-11 2005-12-22 Stanley Electric Co Ltd 発光素子
US7311858B2 (en) * 2004-08-04 2007-12-25 Intematix Corporation Silicate-based yellow-green phosphors
US8017035B2 (en) 2004-08-04 2011-09-13 Intematix Corporation Silicate-based yellow-green phosphors
US7569407B2 (en) 2004-09-21 2009-08-04 Cree, Inc. Methods of coating semiconductor light emitting elements by evaporating solvent from a suspension
JP2008517458A (ja) * 2004-10-18 2008-05-22 エルジー イノテック カンパニー リミテッド 蛍光体、その蛍光体を利用した発光素子、及びその蛍光体の製造方法｛Ｐｈｏｓｐｈｏｒ，ｌｉｇｈｔｅｍｉｔｔｉｎｇｄｅｖｉｃｅｂｙｕｓｉｎｇｔｈｅｓａｍｅａｎｄｍａｎｕｆａｃｔｕｒｉｎｇｍｅｔｈｏｄｏｆｔｈｅｓａｍｅ｝
JP2006124422A (ja) * 2004-10-26 2006-05-18 Toyoda Gosei Co Ltd 改善されたシリケート系蛍光体及びそれを用いたｌｅｄランプ
JP2006245020A (ja) * 2005-02-28 2006-09-14 Sharp Corp 発光ダイオード素子とその製造方法
US7959321B2 (en) 2005-03-31 2011-06-14 Seoul Semiconductor Co., Ltd. Backlight panel employing white light emitting diode having red phosphor and green phosphor
US8132952B2 (en) 2005-03-31 2012-03-13 Seoul Semiconductor Co., Ltd. Backlight panel employing white light emitting diode having red phosphor and green phosphor
JP2010189651A (ja) * 2005-04-05 2010-09-02 Intematix Corp 新規なシリケート系黄色−緑色蛍光体
JP2014141674A (ja) * 2005-04-05 2014-08-07 Intematix Corp 新規なシリケート系黄色−緑色蛍光体
JP2007535615A (ja) * 2005-04-05 2007-12-06 インテマティックス・コーポレーション 新規なシリケート系黄色−緑色蛍光体
JP2006299097A (ja) * 2005-04-21 2006-11-02 Matsushita Electric Works Ltd 発光装置
US8088302B2 (en) 2005-05-24 2012-01-03 Seoul Semiconductor Co., Ltd. Green phosphor of thiogallate, red phosphor of alkaline earth sulfide and white light emitting device thereof
WO2006126819A1 (en) * 2005-05-24 2006-11-30 Seoul Semiconductor Co., Ltd. Light emitting device and phosphor of alkaline earth sulfide therefor
US8017961B2 (en) 2005-05-24 2011-09-13 Seoul Semiconductor Co., Ltd. Light emitting device and phosphor of alkaline earth sulfide therefor
JP2006332163A (ja) * 2005-05-24 2006-12-07 Rohm Co Ltd 白色系発光装置
US7842961B2 (en) 2005-06-17 2010-11-30 Seoul Semiconductor Co., Ltd. Red phosphor and luminous element using the same
JP2007013053A (ja) * 2005-07-04 2007-01-18 Toshiba Corp 発光装置およびその製造方法
US7932666B2 (en) 2005-07-04 2011-04-26 Kabushiki Kaisha Toshiba Light-emitting device with fluorescent layer
US8974852B2 (en) 2005-07-04 2015-03-10 Kabushiki Kaisha Toshiba Method of manufacturing light-emitting device with fluorescent layer
US7927512B2 (en) 2005-08-04 2011-04-19 Nichia Corporation Phosphor and light emitting device
JP4873183B2 (ja) * 2005-08-04 2012-02-08 日亜化学工業株式会社 蛍光体及び発光装置
JPWO2007015542A1 (ja) * 2005-08-04 2009-02-19 日亜化学工業株式会社 蛍光体及び発光装置
JP2008050379A (ja) * 2005-08-10 2008-03-06 Mitsubishi Chemicals Corp 蛍光体及びそれを用いた発光装置
JP2010007085A (ja) * 2005-08-23 2010-01-14 Samsung Electro Mech Co Ltd 複合蛍光体粉末、及びこれを用いた発光装置並びに複合蛍光体粉末の製造方法
JP2009506195A (ja) * 2005-08-31 2009-02-12 ルミネイション リミテッド ライアビリティ カンパニー Ｌｅｄに使用する蛍光体及びその配合物
US9576940B2 (en) 2005-09-30 2017-02-21 Seoul Semiconductor Co., Ltd. Light emitting device and LCD backlight using the same
US9287241B2 (en) 2005-09-30 2016-03-15 Seoul Semiconductor Co., Ltd. Light emitting device and LCD backlight using the same
JP2013122052A (ja) * 2005-11-08 2013-06-20 Intematix Corp シリケート系緑色蛍光体
JP2009515030A (ja) * 2005-11-08 2009-04-09 インテマティックス・コーポレーション シリケート系緑色蛍光体
US8847254B2 (en) 2005-12-15 2014-09-30 Seoul Semiconductor Co., Ltd. Light emitting device
US7842333B2 (en) 2005-12-27 2010-11-30 Samsung Led Co., Ltd. Method of forming phosphor film and method of manufacturing light emitting diode package incorporating the same
JP2007180494A (ja) * 2005-12-27 2007-07-12 Samsung Electro Mech Co Ltd 蛍光体膜形成方法及びこれを用いた発光ダイオードパッケージの製造方法
US8226852B2 (en) 2005-12-27 2012-07-24 Samsung Led Co., Ltd. Method of forming phosphor film and method of manufacturing light emitting diode package incorporating the same
US7608202B2 (en) 2006-02-02 2009-10-27 Nichia Corporation Phosphor and light emitting device using the same
WO2007091687A1 (ja) * 2006-02-10 2007-08-16 Mitsubishi Chemical Corporation 蛍光体及びその製造方法、蛍光体含有組成物、発光装置、並びに画像表示装置及び照明装置
CN101379164B (zh) * 2006-02-10 2012-11-21 三菱化学株式会社 荧光体及其制造方法、含荧光体的组合物、发光装置、图像显示装置和照明装置
JP2008088399A (ja) * 2006-02-10 2008-04-17 Mitsubishi Chemicals Corp 蛍光体及びその製造方法、蛍光体含有組成物、発光装置、並びに画像表示装置及び照明装置
JP2007227680A (ja) * 2006-02-23 2007-09-06 Matsushita Electric Works Ltd 発光ダイオードを用いた白色照明装置
US9312246B2 (en) 2006-03-31 2016-04-12 Seoul Semiconductor Co., Ltd. Light emitting device and lighting system having the same
US9576939B2 (en) 2006-03-31 2017-02-21 Seoul Semiconductor Co., Ltd. Light emitting device and lighting system having the same
US11322484B2 (en) 2006-03-31 2022-05-03 Seoul Semiconductor Co., Ltd. Light emitting device and lighting system having the same
US12009348B2 (en) 2006-03-31 2024-06-11 Seoul Semiconductor Co., Ltd. Light emitting device and lighting system having the same
US8969908B2 (en) 2006-04-04 2015-03-03 Cree, Inc. Uniform emission LED package
JP2009534844A (ja) * 2006-04-20 2009-09-24 クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド 照明装置
US7989823B2 (en) 2006-06-08 2011-08-02 Hong-Yuan Technology Co., Ltd. Light emitting system, light emitting apparatus and forming method thereof
JP2007335799A (ja) * 2006-06-19 2007-12-27 Toyoda Gosei Co Ltd 発光装置
JP2008024791A (ja) * 2006-07-19 2008-02-07 Toshiba Corp 蛍光体、蛍光体の製造方法および発光装置
US7943952B2 (en) 2006-07-31 2011-05-17 Cree, Inc. Method of uniform phosphor chip coating and LED package fabricated using method
JP2008135707A (ja) * 2006-10-31 2008-06-12 Toshiba Lighting & Technology Corp 発光装置
US10295147B2 (en) 2006-11-09 2019-05-21 Cree, Inc. LED array and method for fabricating same
US9159888B2 (en) 2007-01-22 2015-10-13 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US9024349B2 (en) 2007-01-22 2015-05-05 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US8288936B2 (en) 2007-06-05 2012-10-16 Sharp Kabushiki Kaisha Light emitting apparatus, method for manufacturing the light emitting apparatus, electronic device and cell phone device
US10505083B2 (en) 2007-07-11 2019-12-10 Cree, Inc. Coating method utilizing phosphor containment structure and devices fabricated using same
JP2009079094A (ja) * 2007-09-25 2009-04-16 Toshiba Corp 蛍光体およびそれを用いたｌｅｄランプ
US11735699B2 (en) 2007-11-29 2023-08-22 Nichia Corporation Light emitting apparatus and method for producing the same
US11257996B2 (en) 2007-11-29 2022-02-22 Nichia Corporation Light emitting apparatus and method for producing the same
US12396304B2 (en) 2007-11-29 2025-08-19 Nichia Corporation Light emitting apparatus and method for producing the same
US8878219B2 (en) 2008-01-11 2014-11-04 Cree, Inc. Flip-chip phosphor coating method and devices fabricated utilizing method
JP2011511960A (ja) * 2008-01-31 2011-04-14 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 表示装置
US8637883B2 (en) 2008-03-19 2014-01-28 Cree, Inc. Low index spacer layer in LED devices
JP2009277998A (ja) * 2008-05-16 2009-11-26 Toshiba Lighting & Technology Corp 発光装置
US8461756B2 (en) 2008-05-19 2013-06-11 Kabushiki Kaisha Toshiba Linear white light source, and backlight and liquid crystal display device using the same
JP2009135539A (ja) * 2009-03-16 2009-06-18 Toyoda Gosei Co Ltd 固体素子デバイスの製造方法
JP2010141354A (ja) * 2010-03-08 2010-06-24 Toshiba Corp 発光装置およびその製造方法
JP2010124004A (ja) * 2010-03-08 2010-06-03 Toshiba Corp 発光装置およびその製造方法
JP2010272894A (ja) * 2010-08-27 2010-12-02 Toshiba Lighting & Technology Corp 発光装置
WO2012090999A1 (ja) * 2010-12-28 2012-07-05 コニカミノルタオプト株式会社 発光装置の製造方法
JPWO2012090999A1 (ja) * 2010-12-28 2014-06-05 コニカミノルタ株式会社 発光装置の製造方法
US9166126B2 (en) 2011-01-31 2015-10-20 Cree, Inc. Conformally coated light emitting devices and methods for providing the same
JP2012251147A (ja) * 2011-06-03 2012-12-20 Samsung Electronics Co Ltd シリケート蛍光体、シリケート蛍光体の製造方法、及びシリケート蛍光体を含む発光装置
KR101812997B1 (ko) 2011-06-03 2017-12-29 삼성디스플레이 주식회사 실리케이트 형광체, 실리케이트 형광체의 제조방법 및 이를 포함하는 발광 장치
WO2013046674A1 (ja) * 2011-09-27 2013-04-04 コニカミノルタアドバンストレイヤー株式会社 Ｌｅｄ装置の製造方法
JPWO2013046674A1 (ja) * 2011-09-27 2015-03-26 コニカミノルタ株式会社 Ｌｅｄ装置の製造方法
US9938459B2 (en) 2012-07-30 2018-04-10 Sumitomo Metal Mining Co., Ltd Alkaline earth metal silicate phosphor and method for producing same
WO2014021006A1 (ja) * 2012-07-30 2014-02-06 住友金属鉱山株式会社 アルカリ土類金属シリケート蛍光体及びその製造方法
JP2014043539A (ja) * 2012-07-30 2014-03-13 Sumitomo Metal Mining Co Ltd アルカリ土類金属シリケート蛍光体及びその製造方法
CN103883955A (zh) * 2012-12-22 2014-06-25 鸿富锦精密工业（深圳）有限公司 Led车灯
KR101524946B1 (ko) * 2013-12-17 2015-06-02 주식회사 효성 고연색성의 백색 형광체 조성물, 및 이를 포함하는 백색 발광 다이오드
CN103923646A (zh) * 2014-04-10 2014-07-16 上海应用技术学院 一种黄色荧光粉及其制备方法
JP2018107355A (ja) * 2016-12-27 2018-07-05 日亜化学工業株式会社 発光装置の製造方法
JP6998114B2 (ja) 2016-12-27 2022-02-04 日亜化学工業株式会社 発光装置の製造方法

Also Published As

Publication number Publication date
CN101335322A (zh) 2008-12-31
US7023019B2 (en) 2006-04-04
US7422504B2 (en) 2008-09-09
JP3749243B2 (ja) 2006-02-22
KR20040029313A (ko) 2004-04-06
US20040104391A1 (en) 2004-06-03
JP2012099863A (ja) 2012-05-24
US7592639B2 (en) 2009-09-22
CN100423296C (zh) 2008-10-01
TW595012B (en) 2004-06-21
US20060124942A1 (en) 2006-06-15
CN1633718A (zh) 2005-06-29
KR20080087049A (ko) 2008-09-29
JP2009021613A (ja) 2009-01-29
US20070046169A1 (en) 2007-03-01
US7772769B2 (en) 2010-08-10
JP5308318B2 (ja) 2013-10-09
KR100923804B1 (ko) 2009-10-27
US20050227569A1 (en) 2005-10-13
EP1367655A4 (en) 2009-05-06
US20080135862A1 (en) 2008-06-12
JP2010050490A (ja) 2010-03-04
JP4676519B2 (ja) 2011-04-27
US7629620B2 (en) 2009-12-08
CN101335322B (zh) 2010-12-08
JPWO2003021691A1 (ja) 2004-12-24
EP2017901A1 (en) 2009-01-21
USRE47453E1 (en) 2019-06-25
EP1367655A1 (en) 2003-12-03

Similar Documents

Publication Publication Date Title
WO2003021691A1 (en) Semiconductor light emitting device, light emitting apparatus and production method for semiconductor light emitting device
KR100702297B1 (ko) 백색 ｌｅｄ의 제조 방법
CN1214471C (zh) 具有至少一只发光二极管作为光源的照明单元
US8253149B2 (en) Light emitting diode device
US20070012931A1 (en) White semiconductor light emitting device
CN101493216B (zh) 发光二极管光源模组
KR100610249B1 (ko) 황색 발광 형광체 및 그것을 채용한 백색 반도체 발광장치
WO2003080763A8 (en) Tri-color white light led lamp
KR101265094B1 (ko) 백색 발광 다이오드 및 그 제조 방법
CN105304793B (zh) 一种隔离式液体封装led及其制备方法
CN1913183A (zh) 具有发光变换元件的发光半导体器件
EP1354929A3 (en) A phoshor for white led and a white led
US7884384B2 (en) Light emitting diode device and fabrication method thereof
CN1954044A (zh) 使用磷光体转换发光二极管的有效光源的规则
CN101353572B (zh) 波长转换系统
US7569984B2 (en) White-light fluorescent lamp having luminescence layer with silicon quantum dots
KR101493708B1 (ko) 백색 발광 장치
CN103820118A (zh) 磷光体组合物和具有该磷光体组合物的发光器件封装件
CN1866550A (zh) 多波长白光发光二极管
KR100612962B1 (ko) 삼파장 형광체를 이용한 백색 발광 다이오드
CN101009341A (zh) 萤光体及其白光发光二极管
US20040135163A1 (en) Pink light emitting diode
KR20030063832A (ko) 백색 발광 다이오드 및 그 제조 방법
CN100383990C (zh) 发光装置
KR102035169B1 (ko) 형광체 조성물

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 2003525920

Country of ref document: JP

AK Designated states

Kind code of ref document: A1

Designated state(s): CN JP KR US

Kind code of ref document: A1

Designated state(s): CN JP KR

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LU MC NL PT SE SK TR

Kind code of ref document: A1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FR GB GR IE IT LU MC NL PT SE SK TR

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 028029925

Country of ref document: CN

WWE Wipo information: entry into national phase

Ref document number: 1020037007224

Country of ref document: KR

REEP Request for entry into the european phase

Ref document number: 2002762994

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 2002762994

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 10469740

Country of ref document: US

WWP Wipo information: published in national office

Ref document number: 2002762994

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 1020037007224

Country of ref document: KR