JP4473284B2 - 発光装置およびその製造方法 - Google Patents
発光装置およびその製造方法 Download PDFInfo
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- JP4473284B2 JP4473284B2 JP2007064776A JP2007064776A JP4473284B2 JP 4473284 B2 JP4473284 B2 JP 4473284B2 JP 2007064776 A JP2007064776 A JP 2007064776A JP 2007064776 A JP2007064776 A JP 2007064776A JP 4473284 B2 JP4473284 B2 JP 4473284B2
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- Prior art keywords
- light
- phosphor
- light emitting
- emitting element
- emitting device
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Links
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 119
- 238000007789 sealing Methods 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims description 8
- 239000002245 particle Substances 0.000 abstract description 12
- 238000009877 rendering Methods 0.000 description 23
- 229910052751 metal Inorganic materials 0.000 description 21
- 239000002184 metal Substances 0.000 description 21
- 229920005989 resin Polymers 0.000 description 19
- 239000011347 resin Substances 0.000 description 19
- 230000002596 correlated effect Effects 0.000 description 15
- 238000001179 sorption measurement Methods 0.000 description 9
- 238000005286 illumination Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 238000004382 potting Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
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- 229920002050 silicone resin Polymers 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910003668 SrAl Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000006750 UV protection Effects 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- TVZPLCNGKSPOJA-UHFFFAOYSA-N copper zinc Chemical compound [Cu].[Zn] TVZPLCNGKSPOJA-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
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- 239000013307 optical fiber Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/0883—Arsenides; Nitrides; Phosphides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7715—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing cerium
- C09K11/77218—Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77348—Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Description
実施例と同様の第1の蛍光体16と第2の蛍光体18を用意し、これらの第1の蛍光体16と第2の蛍光体18を実施例と同様のシリコーン樹脂に混合し、実施例と同様にリードフレーム12aのカップ13内にポッティングすることにより、第1の蛍光体16と第2の蛍光体18を含む封止部材20で発光素子14を封止した。
実施例の第1の蛍光体16の代わりに実施例の第2の蛍光体18を使用し、実施例の第2の蛍光体18の代わりに実施例の第1の蛍光体16を使用した以外は、実施例と同様の方法により、図9に示すようなカップ13内の構造の発光装置を作製した。
12a、12b リードフレーム
13 カップ(凹部)
13a 底面
14 発光素子
16 第1の蛍光体
18 第2の蛍光体
20 封止部材
22 導電性ワイヤ
24 モールド部材
26 金属製トレイ
28 金属板
30 直流電源
Claims (3)
- 所定のピーク波長の光を発する発光素子と、この発光素子からの光を吸収して発光素子からの光のピーク波長より長波長側にピーク波長を有する光を発する第1の蛍光体と、この第1の蛍光体と発光素子の少なくとも一方からの光を吸収してその少なくとも一方からの光のピーク波長より長波長側にピーク波長を有する光を発する第2の蛍光体とを用意し、第1の蛍光体の上方に対向するように発光素子を配置し、第1の蛍光体を負に帯電させて、正に帯電した発光素子の表面に第1の蛍光体を静電吸着させて第1の蛍光体の層を形成した後、第2の蛍光体を含む封止部材によって発光素子および第1の蛍光体の層を封止することを特徴とする、発光装置の製造方法。
- 前記発光素子が420nm以上且つ490nm未満の領域にピーク波長を有する光を発する発光素子であり、前記第1の蛍光体が490nm以上且つ590nm未満の領域にピーク波長を有する光を発する蛍光体であり、前記第2の蛍光体が590nm以上且つ780nm以下の領域にピーク波長を有する光を発する蛍光体であることを特徴とする、請求項1に記載の発光装置の製造方法。
- 前記封止部材に前記第2の蛍光体を分散させることを特徴とする、請求項1または2に記載の発光装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007064776A JP4473284B2 (ja) | 2006-03-31 | 2007-03-14 | 発光装置およびその製造方法 |
US11/690,974 US7878876B2 (en) | 2006-03-31 | 2007-03-26 | Light emitting device and method for producing same |
US12/568,123 US7956536B2 (en) | 2006-03-31 | 2009-09-28 | Light emitting device and method for producing same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006097083 | 2006-03-31 | ||
JP2007064776A JP4473284B2 (ja) | 2006-03-31 | 2007-03-14 | 発光装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007294894A JP2007294894A (ja) | 2007-11-08 |
JP4473284B2 true JP4473284B2 (ja) | 2010-06-02 |
Family
ID=38557813
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007064776A Expired - Fee Related JP4473284B2 (ja) | 2006-03-31 | 2007-03-14 | 発光装置およびその製造方法 |
Country Status (2)
Country | Link |
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US (2) | US7878876B2 (ja) |
JP (1) | JP4473284B2 (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5040863B2 (ja) * | 2008-09-03 | 2012-10-03 | 豊田合成株式会社 | 半導体発光装置 |
US8129735B2 (en) * | 2008-09-24 | 2012-03-06 | Koninklijke Philips Electronics N.V. | LED with controlled angular non-uniformity |
US20100123386A1 (en) * | 2008-11-13 | 2010-05-20 | Maven Optronics Corp. | Phosphor-Coated Light Extraction Structures for Phosphor-Converted Light Emitting Devices |
US20100119839A1 (en) * | 2008-11-13 | 2010-05-13 | Maven Optronics Corp. | System and Method for Forming a Thin-Film Phosphor Layer for Phosphor-Converted Light Emitting Devices |
CN102116959B (zh) * | 2009-12-31 | 2013-08-14 | 北京京东方光电科技有限公司 | 液晶显示器的光学元件及其制作方法 |
EP2555260A1 (en) * | 2010-03-30 | 2013-02-06 | Mitsubishi Chemical Corporation | Light-emitting device |
US8410679B2 (en) | 2010-09-21 | 2013-04-02 | Cree, Inc. | Semiconductor light emitting devices with densely packed phosphor layer at light emitting surface |
DE102010053362B4 (de) * | 2010-12-03 | 2021-09-30 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips, strahlungsemittierender Halbleiterchip und strahlungsemittierendes Bauelement |
US8764504B2 (en) | 2011-02-25 | 2014-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Lighting device and method for manufacturing the same |
DE102011016567B4 (de) * | 2011-04-08 | 2023-05-11 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zum Herstellen eines optoelektronischen Bauelements und derart hergestelltes Bauelement |
AT13372U1 (de) * | 2012-04-30 | 2013-11-15 | Tridonic Jennersdorf Gmbh | LED-Modul mit hoher Lichtstromdichte |
US8754435B1 (en) | 2013-02-19 | 2014-06-17 | Cooledge Lighting Inc. | Engineered-phosphor LED package and related methods |
US8933478B2 (en) * | 2013-02-19 | 2015-01-13 | Cooledge Lighting Inc. | Engineered-phosphor LED packages and related methods |
CN113841238A (zh) * | 2019-03-18 | 2021-12-24 | 英特曼帝克司公司 | Led灯丝 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3772801B2 (ja) | 1996-11-05 | 2006-05-10 | 日亜化学工業株式会社 | 発光ダイオード |
US6351069B1 (en) | 1999-02-18 | 2002-02-26 | Lumileds Lighting, U.S., Llc | Red-deficiency-compensating phosphor LED |
US6680569B2 (en) * | 1999-02-18 | 2004-01-20 | Lumileds Lighting U.S. Llc | Red-deficiency compensating phosphor light emitting device |
JP2001127346A (ja) | 1999-10-22 | 2001-05-11 | Stanley Electric Co Ltd | 発光ダイオード |
MY145695A (en) * | 2001-01-24 | 2012-03-30 | Nichia Corp | Light emitting diode, optical semiconductor device, epoxy resin composition suited for optical semiconductor device, and method for manufacturing the same |
KR20080087049A (ko) * | 2001-09-03 | 2008-09-29 | 마츠시타 덴끼 산교 가부시키가이샤 | 형광체 층, 반도체발광장치, 반도체발광소자의 제조방법 |
JP2003318447A (ja) | 2002-04-24 | 2003-11-07 | Toshiba Lighting & Technology Corp | 発光ダイオードおよびled照明装置 |
US7224000B2 (en) * | 2002-08-30 | 2007-05-29 | Lumination, Llc | Light emitting diode component |
US6717353B1 (en) * | 2002-10-14 | 2004-04-06 | Lumileds Lighting U.S., Llc | Phosphor converted light emitting device |
JP2004152993A (ja) | 2002-10-30 | 2004-05-27 | Okaya Electric Ind Co Ltd | 発光ダイオード |
US7723740B2 (en) | 2003-09-18 | 2010-05-25 | Nichia Corporation | Light emitting device |
KR20050086237A (ko) * | 2004-02-25 | 2005-08-30 | 삼성에스디아이 주식회사 | 전자방출표시장치용 전자방출원의 형성방법과 이를 이용한전지방출표시장치 |
-
2007
- 2007-03-14 JP JP2007064776A patent/JP4473284B2/ja not_active Expired - Fee Related
- 2007-03-26 US US11/690,974 patent/US7878876B2/en not_active Expired - Fee Related
-
2009
- 2009-09-28 US US12/568,123 patent/US7956536B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20070228933A1 (en) | 2007-10-04 |
US20100013374A1 (en) | 2010-01-21 |
JP2007294894A (ja) | 2007-11-08 |
US7878876B2 (en) | 2011-02-01 |
US7956536B2 (en) | 2011-06-07 |
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