JP4819170B2 - 発光装置およびその製造方法 - Google Patents
発光装置およびその製造方法 Download PDFInfo
- Publication number
- JP4819170B2 JP4819170B2 JP2010032504A JP2010032504A JP4819170B2 JP 4819170 B2 JP4819170 B2 JP 4819170B2 JP 2010032504 A JP2010032504 A JP 2010032504A JP 2010032504 A JP2010032504 A JP 2010032504A JP 4819170 B2 JP4819170 B2 JP 4819170B2
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- JP
- Japan
- Prior art keywords
- particle size
- light emitting
- phosphor
- light
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Led Devices (AREA)
- Luminescent Compositions (AREA)
- Led Device Packages (AREA)
Description
小粒径蛍光体18’および18として、平均粒径(D50)が9μmのSrAl1.42Si3.58O0.42N6.58:Ceからなる組成の緑色蛍光体と、平均粒径(D50)が7μmのCaAlSiN3:Euからなる組成の赤色蛍光体を用意し、これらの2種類の小粒径蛍光体を実施例と同様のシリコーン樹脂に混合し、実施例と同様にリードフレーム12aのカップ13内に注入して樹脂を硬化させることにより、2種類の小粒径蛍光体18’および18を含む封止部材20で発光素子14を封止した。
大粒径蛍光体16として平均粒径(D50)が25μmのSrAl1.45Si3.55O0.45N6.55:Ceからなる組成の緑色蛍光体と、小粒径蛍光体18として平均粒径(D50)が7μmのCaAlSiN3:Euからなる組成の赤色蛍光体を用意し、これらの大粒径蛍光体16と小粒径蛍光体18を実施例と同様のシリコーン樹脂に混合し、実施例と同様にリードフレーム12aのカップ13内に注入して樹脂を硬化させることにより、大粒径蛍光体16および小粒径蛍光体18を含む封止部材20で発光素子14を封止した。なお、大粒径蛍光体16は、樹脂の硬化中に沈降していた。
実施例の大粒径蛍光体16の代わりに、小粒径蛍光体18として平均粒径(D50)が9μmのSrAl1.42Si3.58O0.42N6.58:Ceからなる組成の緑色蛍光体を使用し、実施例の小粒径蛍光体18の代わりに、大粒径蛍光体16として平均粒径(D50)が25μmのCaAlSiN3:Euからなる組成の赤色蛍光体を使用した以外は、実施例と同様の方法により、図11に示すようなカップ13内の構造の発光装置を作製した。
12a、12b リードフレーム
13 カップ(凹部)
13a 底面
14 発光素子
16 大粒径蛍光体
18 小粒径蛍光体
20 封止部材
22 導電性ワイヤ
24 モールド部材
26 金属製トレイ
28 金属板
30 直流電源
Claims (5)
- 凹部が形成された載置部と、この載置部の凹部の底面に載置されて所定のピーク波長の光を発する発光素子と、この発光素子の表面に形成されて発光素子からの光を吸収して発光素子からの光のピーク波長と異なるピーク波長の光を発する大粒径蛍光体の層と、この大粒径蛍光体よりも粒径が小さく且つ発光素子からの光を吸収して発光素子からの光のピーク波長と異なるピーク波長の光を発する小粒径蛍光体と、この小粒径蛍光体が分散して発光素子および大粒径蛍光体の層を載置部の凹部内に封止する封止部材とを備え、大粒径蛍光体の粒径が10μm以上且つ50μm未満、小粒径蛍光体の粒径が1μm以上且つ10μm未満であり、大粒径蛍光体の層が発光素子の表面を均一に覆うように配置され、封止部材の表面から出射された光の相関色温度を封止部材の表面の中心における接平面に対して10〜170°の範囲において10°毎の角度で測定したときの相関色温度の最大値と最小値の差が500K以下であることを特徴とする、発光装置。
- 前記小粒径蛍光体の量が前記大粒径蛍光体と前記小粒径蛍光体の総量の20質量%以下であることを特徴とする、請求項1に記載の発光装置。
- 前記大粒径蛍光体の層が前記発光素子の表面に均等な厚さに形成されていることを特徴とする、請求項1または2に記載の発光装置。
- 前記大粒径蛍光体の粒径が20〜40μmであり、前記小粒径蛍光体の粒径が3〜8μmであることを特徴とする、請求項1乃至3のいずれかに記載の発光装置。
- 平均演色評価数Raが90以上であることを特徴とする、請求項1乃至4のいずれかに記載の発光装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010032504A JP4819170B2 (ja) | 2006-03-31 | 2010-02-17 | 発光装置およびその製造方法 |
Applications Claiming Priority (3)
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JP2006096978 | 2006-03-31 | ||
JP2006096978 | 2006-03-31 | ||
JP2010032504A JP4819170B2 (ja) | 2006-03-31 | 2010-02-17 | 発光装置およびその製造方法 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2007064451A Division JP4473283B2 (ja) | 2006-03-31 | 2007-03-14 | 発光装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2010166065A JP2010166065A (ja) | 2010-07-29 |
JP4819170B2 true JP4819170B2 (ja) | 2011-11-24 |
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JP2010032504A Expired - Fee Related JP4819170B2 (ja) | 2006-03-31 | 2010-02-17 | 発光装置およびその製造方法 |
Country Status (1)
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JP (1) | JP4819170B2 (ja) |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003179269A (ja) * | 2001-01-24 | 2003-06-27 | Nichia Chem Ind Ltd | 光半導体素子 |
US7217583B2 (en) * | 2004-09-21 | 2007-05-15 | Cree, Inc. | Methods of coating semiconductor light emitting elements by evaporating solvent from a suspension |
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2010
- 2010-02-17 JP JP2010032504A patent/JP4819170B2/ja not_active Expired - Fee Related
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JP2010166065A (ja) | 2010-07-29 |
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