JP2005277127A - 発光デバイス - Google Patents
発光デバイス Download PDFInfo
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- JP2005277127A JP2005277127A JP2004088604A JP2004088604A JP2005277127A JP 2005277127 A JP2005277127 A JP 2005277127A JP 2004088604 A JP2004088604 A JP 2004088604A JP 2004088604 A JP2004088604 A JP 2004088604A JP 2005277127 A JP2005277127 A JP 2005277127A
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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Abstract
異なる波長の蛍光を発する複数種類の蛍光体を混合した蛍光体層を含む白色等発光デバイスにおいて、ある一種の蛍光体から発した蛍光が、他種の蛍光体に吸収され、発光の輝度が低下する問題を防止する。
【解決手段】
励起素子から外部へ放出される際の光の経路に沿って、発する蛍光波長が長いものから順に配置する。即ち、励起素子近傍により赤色に近い波長の光を発する蛍光体を配置し、より外側により青色に近い波長の光を発する蛍光体を配置することで、蛍光の再吸収を抑制し、高輝度化を図る。
【選択図】 図1
Description
2 引き出し電極部
3 励起素子
4 ワイヤ
5 バインダー樹脂
6 赤色蛍光体
7 緑色蛍光体
8 透明なシート
9 赤色蛍光体を含む蛍光体層
10 緑色蛍光体を含む蛍光体層
Claims (11)
- LEDチップと、前記LEDチップからの発光の少なくとも一部を吸収して吸収した光より長波長の蛍光を発する二種以上の蛍光体を含む発光デバイスであって、
前記蛍光体は、前記LEDチップから発する発光が外部に放出される際の光路に沿って蛍光波長が長いものから短いものへと順になるよう配置されていることを特徴とする発光デバイス。 - 前記蛍光体は、バインダー樹脂に含有されて前記LEDチップ近傍に配置され、蛍光体層を構成してなり、かつ、蛍光波長が長い蛍光体を含む蛍光体層のバインダー樹脂の屈折率は蛍光波長が短い蛍光体を含む蛍光体層のバインダー樹脂の屈折率より大きいことを特徴とする請求項1に記載の発光デバイス。
- 前記蛍光体は、透明なシート上に前記蛍光体の蛍光波長が長いものが前記LEDチップ側へ配置されるように積層され前記LEDチップの発光観測面近傍に配置されることを特徴とする請求項1に記載の発光デバイス。
- 前記蛍光体のうち蛍光波長が長いものがバインダー樹脂に含有されて前記LEDチップ近傍に配置され蛍光体層を構成してなり、かつ、蛍光波長が短い蛍光体は透明なシート上に積層されて前記蛍光波長が長い蛍光体層の上部に配置されていることを特徴とする請求項1に記載の発光デバイス。
- LEDチップと、前記LEDチップからの発光の少なくとも一部を吸収して吸収した光より長波長の蛍光を発する二種以上の蛍光体を含む発光デバイスの製造方法であって、
前記蛍光体の蛍光波長が大きいものほど蛍光体粒子の中位径が大きくなるように蛍光体の種類ごとに準備する工程と、
前記蛍光体をバインダー樹脂に混合する工程と、
前記蛍光体含有バインダー樹脂を前記LEDチップ近傍へ充填する工程
を含むことを特徴とする発光デバイスの製造方法。 - 前記蛍光体は、異なる波長の蛍光を発する異なる蛍光体の間の中位径の差が1μm以上であることを特徴とする請求項5に記載の発光デバイスの製造方法。
- 更に、前記バインダー樹脂に、ナノ粒子分散剤が混合される工程を含むことを特徴とする請求項5または6に記載の発光デバイスの製造方法。
- 更に、前記バインダー樹脂に、増粘剤が混合される工程を含むことを特徴とする請求項5または6に記載の発光デバイスの製造方法。
- 更に、前記バインダー樹脂を冷却する工程を含むことを特徴とする請求項5または6に記載の発光デバイスの製造方法。
- LEDチップと、前記LEDチップからの発光の少なくとも一部を吸収して吸収した光より長波長の蛍光を発する二種以上の蛍光体を含む発光デバイスの製造方法であって、
前記蛍光体の種類ごとに揮発性溶媒に分散された分散液として調製する工程と、
前記分散液を前記LED素子近傍へ塗布し、蛍光体層を前記蛍光体の発する蛍光波長が長いものから順次積層していく工程
を含むことを特徴とする発光デバイスの製造方法。 - LEDチップと、前記LEDチップからの発光の少なくとも一部を吸収して吸収した光より長波長の蛍光を発する二種以上の蛍光体を含む発光デバイスの製造方法であって、
前記蛍光体の種類ごとに蛍光体を分散した分散液を調整する工程と、
前記蛍光体分散液を透明なシート上に塗布して、前記蛍光体の蛍光波長が長いものがより前記LEDチップ側へ配置されるように積層する工程と、
前記透明なシートを前記LEDチップの発光観測面近傍に配置する工程
を含むことを特徴とする発光デバイスの製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004088604A JP4451178B2 (ja) | 2004-03-25 | 2004-03-25 | 発光デバイス |
Applications Claiming Priority (1)
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---|---|---|---|
JP2004088604A JP4451178B2 (ja) | 2004-03-25 | 2004-03-25 | 発光デバイス |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005277127A true JP2005277127A (ja) | 2005-10-06 |
JP4451178B2 JP4451178B2 (ja) | 2010-04-14 |
Family
ID=35176449
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2004088604A Expired - Fee Related JP4451178B2 (ja) | 2004-03-25 | 2004-03-25 | 発光デバイス |
Country Status (1)
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JP (1) | JP4451178B2 (ja) |
Cited By (68)
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JP2007049114A (ja) * | 2005-05-30 | 2007-02-22 | Sharp Corp | 発光装置とその製造方法 |
JP2007149909A (ja) * | 2005-11-28 | 2007-06-14 | Nichia Chem Ind Ltd | 発光装置 |
JP2007173397A (ja) * | 2005-12-20 | 2007-07-05 | Matsushita Electric Ind Co Ltd | 発光モジュールとこれを用いた表示装置及び照明装置 |
WO2007077869A1 (ja) * | 2006-01-04 | 2007-07-12 | Rohm Co., Ltd. | 薄型発光ダイオードランプとその製造方法 |
JP2007184330A (ja) * | 2006-01-04 | 2007-07-19 | Rohm Co Ltd | 発光装置及びその製造方法 |
JP2007184326A (ja) * | 2006-01-04 | 2007-07-19 | Rohm Co Ltd | 薄型発光ダイオードランプとその製造方法 |
JP2007201301A (ja) * | 2006-01-30 | 2007-08-09 | Sumitomo Metal Electronics Devices Inc | 白色ledの発光装置 |
JP2007294728A (ja) * | 2006-04-26 | 2007-11-08 | Nichia Chem Ind Ltd | 半導体発光装置 |
JP2007311663A (ja) * | 2006-05-19 | 2007-11-29 | Sharp Corp | 発光装置の製造方法、発光装置、および発光装置の製造装置 |
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