JP5280818B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
- Publication number
- JP5280818B2 JP5280818B2 JP2008304733A JP2008304733A JP5280818B2 JP 5280818 B2 JP5280818 B2 JP 5280818B2 JP 2008304733 A JP2008304733 A JP 2008304733A JP 2008304733 A JP2008304733 A JP 2008304733A JP 5280818 B2 JP5280818 B2 JP 5280818B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- light emitting
- emitting device
- emitting element
- filler
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229920005989 resin Polymers 0.000 claims description 124
- 239000011347 resin Substances 0.000 claims description 124
- 239000000945 filler Substances 0.000 claims description 99
- 230000001681 protective effect Effects 0.000 claims description 81
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 56
- 229920002050 silicone resin Polymers 0.000 claims description 44
- 239000003822 epoxy resin Substances 0.000 claims description 8
- 229920000647 polyepoxide Polymers 0.000 claims description 8
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- 238000000149 argon plasma sintering Methods 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- 239000004952 Polyamide Substances 0.000 claims description 4
- 229920001807 Urea-formaldehyde Polymers 0.000 claims description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052863 mullite Inorganic materials 0.000 claims description 4
- 229920002647 polyamide Polymers 0.000 claims description 4
- 238000001579 optical reflectometry Methods 0.000 claims description 2
- 238000013021 overheating Methods 0.000 claims description 2
- 229920001296 polysiloxane Polymers 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 16
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 14
- 229910052709 silver Inorganic materials 0.000 description 14
- 239000004332 silver Substances 0.000 description 14
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 13
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 12
- 229910052737 gold Inorganic materials 0.000 description 12
- 239000010931 gold Substances 0.000 description 12
- 229910052693 Europium Inorganic materials 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 238000007789 sealing Methods 0.000 description 9
- 239000004954 Polyphthalamide Substances 0.000 description 8
- 229920006375 polyphtalamide Polymers 0.000 description 8
- 229910004283 SiO 4 Inorganic materials 0.000 description 7
- 238000000605 extraction Methods 0.000 description 7
- 238000004898 kneading Methods 0.000 description 7
- 229910052725 zinc Inorganic materials 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 229910052771 Terbium Inorganic materials 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 238000004382 potting Methods 0.000 description 5
- 229910052688 Gadolinium Inorganic materials 0.000 description 3
- 229910052793 cadmium Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 3
- 229910052727 yttrium Inorganic materials 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 2
- QVMHUALAQYRRBM-UHFFFAOYSA-N [P].[P] Chemical compound [P].[P] QVMHUALAQYRRBM-UHFFFAOYSA-N 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000000994 depressogenic effect Effects 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 102100032047 Alsin Human genes 0.000 description 1
- 101710187109 Alsin Proteins 0.000 description 1
- 229910015999 BaAl Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910003668 SrAl Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Description
図1は本発明の実施の形態1による発光装置70を示す模式断面図である。発光装置70は、光を外部に放射する発光透光面の形状が細長いサイド発光型のLED発光装置である。発光装置70は、ポリフタルアミド(PPA)で形成された絶縁性の基部10、青色LEDチップからなる発光素子1、およびSiのツェナーダイオードからなる保護素子2を備える。基部10は発光装置70の発光面となる上面側が窪んだ凹状開口部を有する光反射壁7を備え、凹状開口部の底面(すなわち基部10の上面)には第1の電極3および第2の電極4が形成されている。第1の電極3および第2の電極4はそれぞれ発光装置70の外部の電源に接続できるよう外部電極(図示せず)に接続されている。
図2は本発明の実施の形態2による発光装置71を示す模式断面図である。本実施の形態において実施の形態1と同等の機能を有する部材または構成については詳細な説明を省略し、同一の符号を付す。
図3は本発明の実施の形態3による発光装置72を示す模式平面図であり、図4は図3に示すA−A断面を示す模式断面図である。図3においては、凹状開口部の内部を詳細に示すために、蛍光体および封止樹脂を図示していない。本実施の形態において実施の形態2と同等の機能を有する部材または構成については詳細な説明を省略し、同一の符号を付す。
ここで蛍光体含有樹脂6は、(Ba,Sr)2SiO4:Euからなる黄色蛍光体6aと透光性のシリコーン樹脂とを混練したものであり、黄色蛍光体6aのシリコーン樹脂に対する重量比は0.118である。
図5は本発明の実施の形態4による発光装置73を示す模式平面図であり、図6は図5に示すB−B断面を示す模式断面図である。図3においては、凹状開口部の内部を詳細に示すために、蛍光体および封止樹脂を図示していない。本実施の形態において実施の形態3と同等の機能を有する部材または構成については詳細な説明を省略し、同一の符号を付す。
図7は本発明の実施の形態5による発光装置74を示す模式平面図であり、図8は図7に示す発光装置74を示す模式断面図である。本実施の形態において実施の形態4と同等の機能を有する部材または構成については詳細な説明を省略し、同一の符号を付す。
フィラー含有樹脂に含まれるフィラーは、ミー散乱によって光を反射(散乱)するので、発光素子1からの光の波長より大きい粒径を有することが好ましい。また、本願のように樹脂にフィラーを混合させている場合、樹脂の屈折率に対してフィラーの屈折率が高いほど反射効果が高くなる。そのため、フィラーの屈折率が高い方が好適である。
蛍光体として、黄色蛍光を発するEu(ユーロピウム)を賦活したα−サイアロンである、Ca(Si,Al)12(O,N)16:Eu、あるいはBOSE:Eu系である(Ba,Sr)2SiO4、(Y,Gd)3Al5O12:CeまたはTb3Al5O12:Ce、を用いてもよい。
1 発光素子
2 保護素子
3 第1の電極
4 第2の電極
5 フィラー含有樹脂(光反射性部材)
5a フィラー
6 蛍光体含有樹脂(透光性部材)
6a、6b、6c 蛍光体
7 光反射壁
7a 穴部(凹部)
8 封止樹脂(透光性部材)
9 ワイヤ
Claims (12)
- 絶縁性の基部と、上記基部の一方の側に載置された発光素子と、上記基部の上記発光素子と同じ側に載置され上記発光素子を保護する保護素子とを備える発光装置において、
上記保護素子は、光を反射する光反射性部材によって覆われ、
上記光反射性部材は、硬化前に軟性を有する透明部材に、上記発光素子が発する光の波長より大きい粒径の、光反射性あるいは光散乱性を有するフィラーを含有させたものであり、
上記発光装置は、
上記発光素子を囲うように上記基部の上記発光素子と同じ側に配置され、光を反射する光反射壁を備え、
上記光反射性部材の表面は、上記光反射壁と繋がっており、上記光反射性部材の表面は上記光反射壁と共に、上記発光素子からの光を上記発光装置の外部へ反射する光反射面を形成しており、上記光反射面は、上記発光素子を囲う連続した面であることを特徴とする発光装置。 - 上記光反射壁はその一部に凹部を有し、上記保護素子は上記凹部に配置されていることを特徴とする請求項1に記載の発光装置。
- 上記光反射面の上記光反射性部材で形成された部分は、上記光反射面の上記光反射壁で形成された部分と同じ形状であることを特徴とする請求項2に記載の発光装置。
- 上記基部上には、2つの電極が形成されており、上記光反射性部材が上記2つの電極間の隙間の少なくとも一部に形成されていることを特徴とする請求項1または2に記載の発光装置。
- 上記発光素子を透光性部材で覆っていることを特徴とする請求項1から4のいずれか一項に記載の発光装置。
- 上記透光性部材は、上記発光素子からの光を吸収する蛍光体を含有することを特徴とする請求項5に記載の発光装置。
- 上記光反射性部材に覆われる上記保護素子は、複数個であることを特徴とする請求項1から6のいずれか一項に記載の発光装置。
- 上記保護素子は、過熱、過電圧、または過電流から上記発光素子を保護することを特徴とする請求項1から7のいずれか一項に記載の発光装置。
- 上記保護素子は、上記発光素子に印加される逆方向の電圧または順方向の過電圧から上記発光素子を保護するツェナーダイオードからなることを特徴とする請求項1から7のいずれか一項に記載の発光装置。
- 上記透明部材は、透明樹脂またはガラスからなることを特徴とする請求項1から9のいずれか一項に記載の発光装置。
- 上記フィラーは、TiO2、SiO2、アルミナ、窒化アルミニウム、またはムライトからなることを特徴とする請求項10に記載の発光装置。
- 上記透明樹脂は、エポキシ樹脂、ユリア樹脂、シリコーン、変性エポキシ樹脂、変性シリコーン樹脂、またはポリアミドからなることを特徴とする請求項10または11に記載の発光装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008304733A JP5280818B2 (ja) | 2008-11-28 | 2008-11-28 | 発光装置 |
US12/625,993 US8476657B2 (en) | 2008-11-28 | 2009-11-25 | Light-emitting device |
CN200910224958.8A CN101752355B (zh) | 2008-11-28 | 2009-11-26 | 发光装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008304733A JP5280818B2 (ja) | 2008-11-28 | 2008-11-28 | 発光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010129883A JP2010129883A (ja) | 2010-06-10 |
JP5280818B2 true JP5280818B2 (ja) | 2013-09-04 |
Family
ID=42221965
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008304733A Active JP5280818B2 (ja) | 2008-11-28 | 2008-11-28 | 発光装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8476657B2 (ja) |
JP (1) | JP5280818B2 (ja) |
CN (1) | CN101752355B (ja) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102010031945A1 (de) * | 2010-07-22 | 2012-01-26 | Osram Opto Semiconductors Gmbh | Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements |
EP2448028B1 (en) | 2010-10-29 | 2017-05-31 | Nichia Corporation | Light emitting apparatus and production method thereof |
CN102456826A (zh) * | 2010-11-01 | 2012-05-16 | 富士康(昆山)电脑接插件有限公司 | 发光二极管导线架 |
JP5582048B2 (ja) * | 2011-01-28 | 2014-09-03 | 日亜化学工業株式会社 | 発光装置 |
KR101766297B1 (ko) * | 2011-02-16 | 2017-08-08 | 삼성전자 주식회사 | 발광소자 패키지 및 그 제조방법 |
KR101923688B1 (ko) * | 2011-08-29 | 2018-11-29 | 엘지이노텍 주식회사 | 발광소자 패키지 및 라이트 유닛 |
US9070831B2 (en) | 2011-10-11 | 2015-06-30 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting device each having variable distances between pairs of electrode pads with respect to Zener diodes and lighting apparatus using the same |
JPWO2013105514A1 (ja) * | 2012-01-13 | 2015-05-11 | コニカミノルタ株式会社 | Led装置 |
JP6096413B2 (ja) * | 2012-01-25 | 2017-03-15 | 新光電気工業株式会社 | 配線基板、発光装置及び配線基板の製造方法 |
KR101974088B1 (ko) * | 2012-05-31 | 2019-04-30 | 엘지디스플레이 주식회사 | 발광 다이오드 |
KR101957701B1 (ko) * | 2012-11-14 | 2019-03-14 | 삼성전자주식회사 | 발광소자 패키지 및 그 제조방법 |
DE102013202904A1 (de) * | 2013-02-22 | 2014-08-28 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil und Verfahren zu seiner Herstellung |
DE102013102482A1 (de) * | 2013-03-12 | 2014-10-02 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
CN103162143B (zh) * | 2013-03-16 | 2015-04-15 | 李忠训 | 基于高压恒流技术的led模组 |
DE102013103416A1 (de) * | 2013-04-05 | 2014-10-23 | Osram Opto Semiconductors Gmbh | Elektromagnetische Strahlung emittierende Baugruppe und Verfahren zum Herstellen einer elektromagnetische Strahlung emittierenden Baugruppe |
KR101476217B1 (ko) * | 2014-05-28 | 2014-12-24 | 엘지전자 주식회사 | 황색 발광 형광체 및 이를 이용한 발광 소자 패키지 |
JP6648467B2 (ja) * | 2014-12-25 | 2020-02-14 | 日亜化学工業株式会社 | 発光装置 |
KR102374676B1 (ko) * | 2015-01-05 | 2022-03-16 | 서울반도체 주식회사 | 발광 다이오드 패키지 및 그 제조 방법 |
JP6627227B2 (ja) * | 2015-02-27 | 2020-01-08 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
US9502623B1 (en) | 2015-10-02 | 2016-11-22 | Nichia Corporation | Light emitting device |
JP6862141B2 (ja) | 2015-10-14 | 2021-04-21 | エルジー イノテック カンパニー リミテッド | 発光素子パッケージ及び照明装置 |
KR101831249B1 (ko) * | 2015-10-14 | 2018-02-23 | 엘지이노텍 주식회사 | 발광소자 패키지 및 조명 장치 |
JP6278035B2 (ja) * | 2015-11-27 | 2018-02-14 | 日亜化学工業株式会社 | 発光装置の製造方法 |
CN109556029B (zh) * | 2018-12-29 | 2023-10-20 | 广东德洛斯照明工业有限公司 | 一种反光器以及照明装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6054716A (en) * | 1997-01-10 | 2000-04-25 | Rohm Co., Ltd. | Semiconductor light emitting device having a protecting device |
EP2017901A1 (en) * | 2001-09-03 | 2009-01-21 | Panasonic Corporation | Semiconductor light emitting device, light emitting apparatus and production method for semiconductor light emitting DEV |
DE10229067B4 (de) * | 2002-06-28 | 2007-08-16 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zu dessen Herstellung |
JP2005026401A (ja) | 2003-07-01 | 2005-01-27 | Matsushita Electric Ind Co Ltd | 発光ダイオード |
JP4773048B2 (ja) * | 2003-09-30 | 2011-09-14 | シチズン電子株式会社 | 発光ダイオード |
DE102005043928B4 (de) * | 2004-09-16 | 2011-08-18 | Sharp Kk | Optisches Halbleiterbauteil und Verfahren zu dessen Herstellung |
KR200373718Y1 (ko) * | 2004-09-20 | 2005-01-21 | 주식회사 티씨오 | 정전기 방전 충격에 대한 보호 기능이 내장된 고휘도발광다이오드 |
JP2006332618A (ja) * | 2005-04-25 | 2006-12-07 | Naoya Yanase | 電子部品実装基板、及びその電子部品実装基板の製造方法 |
JP4789673B2 (ja) * | 2005-10-27 | 2011-10-12 | 京セラ株式会社 | 発光素子収納用パッケージならびにこれを用いた光源および発光装置 |
JP2007280983A (ja) * | 2006-04-03 | 2007-10-25 | Nichia Chem Ind Ltd | 発光装置 |
JP2008060344A (ja) * | 2006-08-31 | 2008-03-13 | Toshiba Corp | 半導体発光装置 |
JP4882634B2 (ja) * | 2006-09-26 | 2012-02-22 | 日亜化学工業株式会社 | 発光装置 |
JP5233170B2 (ja) * | 2007-05-31 | 2013-07-10 | 日亜化学工業株式会社 | 発光装置、発光装置を構成する樹脂成形体及びそれらの製造方法 |
-
2008
- 2008-11-28 JP JP2008304733A patent/JP5280818B2/ja active Active
-
2009
- 2009-11-25 US US12/625,993 patent/US8476657B2/en active Active
- 2009-11-26 CN CN200910224958.8A patent/CN101752355B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
US20100133571A1 (en) | 2010-06-03 |
CN101752355B (zh) | 2012-10-31 |
US8476657B2 (en) | 2013-07-02 |
CN101752355A (zh) | 2010-06-23 |
JP2010129883A (ja) | 2010-06-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5280818B2 (ja) | 発光装置 | |
JP4761848B2 (ja) | 半導体発光装置 | |
KR102393760B1 (ko) | 발광 장치 및 그 제조 방법 | |
US8421102B2 (en) | Semiconductor light-emitting device having a member in a periphery made of a material whose color, transparency or adhesiveness changes overtime due to light or heat emission from the emitting element | |
JP5895598B2 (ja) | 発光装置 | |
CN111063785A (zh) | 发光装置的制造方法 | |
JPWO2008105527A1 (ja) | Led装置及び照明装置 | |
KR20020079516A (ko) | 발광장치 | |
JP6107415B2 (ja) | 発光装置 | |
JP2016058614A (ja) | 発光装置、及び照明装置 | |
WO2016129495A1 (ja) | 光源装置および発光装置 | |
JP6891797B2 (ja) | ディスプレイ装置 | |
JP2014060328A (ja) | 発光装置 | |
JP2007329502A (ja) | 発光装置 | |
JP6225910B2 (ja) | 発光装置 | |
JP2009065199A (ja) | 発光装置 | |
KR20110039229A (ko) | 복수개의 파장변환 물질층들을 갖는 발광 소자 | |
US9812620B2 (en) | Light emitting device and method of manufacturing the light emitting device | |
JP5005013B2 (ja) | 発光装置及び照明装置 | |
KR101202168B1 (ko) | 고전압 발광 다이오드 패키지 | |
JP5811770B2 (ja) | 発光装置およびその製造方法 | |
KR20080061565A (ko) | 복수개의 파장변환 물질층들을 갖는 발광 소자 | |
KR20130027653A (ko) | Led 백색 광원모듈 | |
JP2019186505A (ja) | 発光装置、照明装置、及び、シリコーン樹脂 | |
US11710809B2 (en) | Light-emitting device and method of manufacturing the light-emitting device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110223 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120625 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120703 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120903 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130514 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130523 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 5280818 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |