JP6278035B2 - 発光装置の製造方法 - Google Patents
発光装置の製造方法 Download PDFInfo
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- JP6278035B2 JP6278035B2 JP2015231202A JP2015231202A JP6278035B2 JP 6278035 B2 JP6278035 B2 JP 6278035B2 JP 2015231202 A JP2015231202 A JP 2015231202A JP 2015231202 A JP2015231202 A JP 2015231202A JP 6278035 B2 JP6278035 B2 JP 6278035B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 238000000034 method Methods 0.000 title claims description 23
- 229920005989 resin Polymers 0.000 claims description 152
- 239000011347 resin Substances 0.000 claims description 152
- 239000000463 material Substances 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 16
- 239000000945 filler Substances 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 5
- 238000007747 plating Methods 0.000 claims description 2
- 238000007789 sealing Methods 0.000 description 16
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 11
- 229920002050 silicone resin Polymers 0.000 description 7
- 238000000605 extraction Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 5
- 238000007599 discharging Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
Description
<支持体準備工程>
<発光素子等配置工程>
<光反射壁形成工程>
<封止部材形成工程>
Claims (11)
- 凹部を有する支持体を準備する工程と、
前記凹部の底面に発光素子を配置する工程と、
前記凹部の底面に第一の光反射樹脂を配置する工程と、
前記第一の光反射樹脂よりも粘度が高い第二の光反射樹脂を前記凹部に配置する工程と、
前記第一の光反射樹脂および前記第二の光反射樹脂を硬化させて光反射側壁を形成する工程を含む発光装置の製造方法。 - 前記凹部の側面は、前記発光素子を挟んで向かい合う2つの第一の領域と、それらと異なる方向から前記発光素子を挟んで向かい合う2つの第二の領域とから構成されており、
前記第一の領域と前記発光素子との距離が前記第二の領域と前記発光素子との距離よりも小さく、
前記第一の領域と前記発光素子との間に前記第一の光反射樹脂を配置し、
前記第二の領域と前記発光素子との間に前記第二の光反射樹脂を配置する請求項1に記載の発光装置の製造方法。 - 前記第一の光反射樹脂を前記第二の領域と前記発光素子との間に供給した後、前記第一の領域と前記発光素子との間に延在させる請求項2に記載の発光装置の製造方法。
- 前記第一の光反射樹脂および前記第二の光反射樹脂を前記発光素子から間隔を空けて配置する請求項1から3のいずれか一項に記載の発光装置の製造方法。
- 前記凹部の底面に、前記発光素子とは異なる半導体素子を配置した後、前記第一の光反射樹脂により前記半導体素子を被覆する請求項1から4のいずれか一項に記載の発光装置の製造方法。
- 前記支持体は、前記凹部の底面に金メッキを有する配線電極を備える請求項1から5のいずれか一項に記載の発光装置の製造方法。
- 前記発光素子の電極を前記配線電極とワイヤで接続した後、
前記ワイヤの少なくとも一部を前記第一の光反射樹脂で被覆する請求項6に記載の発光装置の製造方法。 - 前記第二の光反射樹脂を硬化させて前記発光素子よりも高い光反射壁を形成する請求項1から7のいずれか一項に記載の発光装置の製造方法。
- 前記第一の光反射樹脂および前記第二の光反射樹脂は、光拡散材を含む請求項1から8のいずれか一項に記載の発光装置の製造方法。
- 前記第二の光反射樹脂は、前記第一の光反射樹脂よりもフィラーの含有濃度が高い請求項1から9のいずれか一項に記載の発光装置の製造方法。
- 前記支持体は、セラミックスパッケージである請求項1から10のいずれか一項に記載の発光装置の製造方法。
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JP2015231202A JP6278035B2 (ja) | 2015-11-27 | 2015-11-27 | 発光装置の製造方法 |
US15/346,257 US10181459B2 (en) | 2015-11-27 | 2016-11-08 | Method of manufacturing light-emitting device |
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JP2015231202A JP6278035B2 (ja) | 2015-11-27 | 2015-11-27 | 発光装置の製造方法 |
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JP6278035B2 true JP6278035B2 (ja) | 2018-02-14 |
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Families Citing this family (8)
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DE102017128457A1 (de) | 2017-11-30 | 2019-06-06 | Osram Opto Semiconductors Gmbh | Herstellung optoelektronischer bauelemente |
JP6852745B2 (ja) * | 2018-06-29 | 2021-03-31 | 日亜化学工業株式会社 | 発光装置の製造方法および発光装置 |
US10510591B1 (en) * | 2018-06-29 | 2019-12-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Package-on-package structure and method of manufacturing package |
WO2020003789A1 (ja) | 2018-06-29 | 2020-01-02 | 日亜化学工業株式会社 | 発光装置の製造方法および発光装置 |
US11043621B2 (en) | 2018-07-09 | 2021-06-22 | Nichia Corporation | Light emitting device and method of manufacturing light emitting device |
JP7256382B2 (ja) * | 2019-04-26 | 2023-04-12 | 日亜化学工業株式会社 | 発光装置の製造方法 |
JP7364858B2 (ja) * | 2019-06-13 | 2023-10-19 | 日亜化学工業株式会社 | 発光装置 |
CN112563383A (zh) * | 2019-09-25 | 2021-03-26 | 佛山市国星光电股份有限公司 | 一种led封装方法、led器件及cob光源 |
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JP5013905B2 (ja) * | 2007-02-28 | 2012-08-29 | スタンレー電気株式会社 | 半導体発光装置 |
JP2008305940A (ja) * | 2007-06-07 | 2008-12-18 | Showa Denko Kk | 表示装置、キャップ、発光装置、およびこれらの製造方法 |
JP5280818B2 (ja) * | 2008-11-28 | 2013-09-04 | シャープ株式会社 | 発光装置 |
JP5396215B2 (ja) * | 2009-09-24 | 2014-01-22 | スタンレー電気株式会社 | 半導体発光装置の製造方法、半導体発光装置および液晶表示装置 |
US20110254030A1 (en) * | 2010-04-15 | 2011-10-20 | Perkinelmer Elcos Gmbh | Liquid reflector |
JP5710915B2 (ja) | 2010-09-09 | 2015-04-30 | シチズンホールディングス株式会社 | 半導体発光装置 |
JP5886584B2 (ja) * | 2010-11-05 | 2016-03-16 | ローム株式会社 | 半導体発光装置 |
JPWO2013011628A1 (ja) * | 2011-07-19 | 2015-02-23 | パナソニック株式会社 | 発光装置及びその製造方法 |
JP5956167B2 (ja) * | 2012-01-23 | 2016-07-27 | スタンレー電気株式会社 | 発光装置、車両用灯具及び発光装置の製造方法 |
JP2014082453A (ja) * | 2012-09-25 | 2014-05-08 | Toyoda Gosei Co Ltd | 発光装置の製造方法 |
JP5527456B2 (ja) | 2013-04-10 | 2014-06-18 | 日亜化学工業株式会社 | 発光装置の製造方法 |
JP2014207349A (ja) * | 2013-04-15 | 2014-10-30 | パナソニック株式会社 | 発光装置およびその製造方法 |
JP6149727B2 (ja) * | 2013-12-28 | 2017-06-21 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
JP6459880B2 (ja) * | 2015-09-30 | 2019-01-30 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
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