Claims (1)
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十、申請專利範圍:X. The scope of application for patents:
曰修(更)正本 第094101516號專利申請案 中文申請專利範圍替換本(97年5月) 一種發光二極體元件,包含: Ίχ光一極體晶片’能產生初始光線,以及 蛋光材料,該螢光材料係由一銪致活之驗土族氧化 物與摻雜雜質所組成,會吸收一部分該初始光線以發射出 波長相異之螢光光線,其中該摻雜雜質係選自氟、氯、演、 破、磷、硫及氮中至少一者;曰修(more)本本本094101516 Patent Application Chinese Patent Application Renewal (June 1997) A light-emitting diode component comprising: a phosphorescent wafer wafer capable of generating initial light, and egg light material, The fluorescent material is composed of a living earth oxide and doping impurities, and absorbs a part of the initial light to emit fluorescent light having a different wavelength, wherein the doping impurity is selected from fluorine, chlorine, At least one of acting, breaking, phosphorus, sulfur and nitrogen;
藉由混合該初始光線及螢光光線使該發光二極體元件 成為一多波長光源。 2·根據請求項丨之發光二極體元件,其中該銪致活之鹼土族 氧化物之主體係由氧化鎂(Mg0)、氧化鈣(Ca0)、氧 化釔(SrO )、氧化鋇(Ba〇 )、氧化鎂鈣鳃鋇 ((Mg,Ca,Sr,Ba)0)、氧化鎂鋰鎮((Mg,Sr,Ba)〇)、氧 化鈣鳃鋇((Ca,Sr,Ba)〇)及氧化錕鋇((Sr,Ba)〇)之銪致 活之驗土族氧化物中至少一者所組成。The light emitting diode element is a multi-wavelength light source by mixing the initial light and the fluorescent light. 2. The luminescent diode component according to the claim ,, wherein the main system of the bismuth-activated alkaline earth oxide consists of magnesium oxide (Mg0), calcium oxide (Ca0), strontium oxide (SrO), and cerium oxide (Ba〇). ), magnesium oxide calcium strontium ((Mg, Ca, Sr, Ba) 0), magnesium oxide lithium ((Mg, Sr, Ba) 〇), calcium oxide strontium ((Ca, Sr, Ba) 及) and At least one of the oxides of the earthworms activated by cerium oxide ((Sr, Ba) cerium).
3·根據請求項i之發光二極體元件,其中該銪致活驗土族氧 化物係以二價銪(Eu2+)作為活化劑。 根據請求項2之發光二極體元件,其中該_料係選自 所述銪致活之驗土族氧化物,並以不同組成比例所形成的 化合物及混合物中之至少—種形式存在。 根據請求項1之發光二極體元件,其中該銪致活之驗土族 氧化物的螢光材料可以Η —伊 乂疋一知銪致活之氧化鎂鈣鳃鋇 ((Mgr,Ca為,叫〇咖2+)、二價銪致活之氧化鎂銘鋇 ((Mga’ b’ ae)〇.SEu )、二價銪致活之氧化鋰鋇((叫, [.\HU\LGC\A34276\97639\97639.doc 1303111 Srj)〇:sEu2+),化學式中a、b、c、i、j、r、s、x、yh 必須滿足下列關係式及等式:,啦i、 (r+X+y+Z+s)=l、(a+b+c+s)==1 及(i+j + s)=l。 6. —種發光二極體元件,包含: 一發光二極體晶片,能產生初始光線;以及 一勞光材料,該螢光材料係由至少一銪致活矽酸鹽與 按雜雜質所組成,會吸收一部分該初始光線以發射出波長3. The luminescent diode element according to claim i, wherein the bismuth-based bio-organic oxide system uses divalent europium (Eu2+) as an activator. A light-emitting diode element according to claim 2, wherein the material is selected from the earth-killing earth oxides of the earthworms, and is present in at least one of a compound and a mixture formed in different composition ratios. According to the light-emitting diode element of claim 1, wherein the fluorescent material of the earth-removing earth oxide of the earthworm can be activated, the magnesium oxide calcium strontium (Mgr, Ca is called 〇 2+ 2+), 二 铕 铕 之 氧化 氧化 ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( \97639\97639.doc 1303111 Srj)〇:sEu2+), in the chemical formula a, b, c, i, j, r, s, x, yh must satisfy the following relations and equations:, i, (r+X +y+Z+s)=l, (a+b+c+s)==1 and (i+j + s)=l. 6. A light-emitting diode element comprising: a light-emitting diode a wafer capable of generating initial light; and a glazing material consisting of at least one bismuth citrate and impurity-containing impurities, absorbing a portion of the initial ray to emit a wavelength
相異之螢光光線,其中該摻雜雜質係選自氯、溴、碘、磷、 硫及氮中至少一者; 藉由混合該初始光線及螢光光線使該發光二極體元件 成為一多波長光源。 7 ·根據請求項6之發光二極體元件,其中該銪致活矽酸鹽之 主體化學式為AjiO4,該化學式中A係選自鋰、鈣、鋇、 鎂、鋅及鎘中至少一者。 8 ·根據請求項6之發光二極體元件,其中該銪致活矽酸鹽之 主體係由矽酸鈣鳃鋇所組成,其化學式為 (Si^x_yBaxcay)si〇4,該化學式中X及y僅需要滿足下列一 組 ®SS:〇$XS〇.8,〇$y$〇8;〇‘X$〇5,〇$y$〇3; 0.5 ^ 0·7,0·2 g y ^ 0.5。 9· 一種發光二極體元件,包含: 一發光二極體晶片,能產生初始光線;以及 一螢光材料,該螢光材料係由至少一銪致活準矽酸鹽 與接雜雜質所組成,會吸收一部分該初始光線以發射出波 長相異之螢光光線,其中該摻雜雜質係選自氟、氯、溴、 639. doc H:\HU\LGC\A34276\97639\97< -2 - 1303111 碘、猶、硫及氮中至少一者; 藉由混合該初始光線及螢光光線使該發光二極體元件 成為一多波長光源。 10. —種發光二極體元件,包含: 一發光二極體晶片,能產生初始光線;以及 一螢光材料,該螢光材料係由至少一銪致活準矽酸蹄 所組成,會吸收一部分該初始光線以發射出波長相異之螢 光光線; 藉由混合該初始光線及螢光光線使該發光二極體元件 成為一多波長光源。 11·根據請求項9或10之發光二極體元件,其中該銪致活準矽 酸鹽之主體化學式為ASi〇3,該化學式中A係選自锶、鈣、 鋇、鎂、辞及録中至少一者。 !2·根據請求項9或10之發光二極體元件,其中該銪致活準矽 酉欠鹽之主體係由準矽酸鈣鳃鋇所組成,其化學式為 (Sr2_x-yBaxCay)Si〇3,該化學式中乂及y僅需要滿足下列一 組關係式·〇$χ^ο.8,ο^γ^〇8;〇^χ^〇5,〇^0〇3; 〇·5 $ X $ 〇 7,0.2 g y g 〇·5。 13· 一種發光二極體元件,包含: 一發光二極體晶片,能產生初始光線;以及 一螢光材料,該螢光材料係由至少一銪致活過氧磷酸 鹽與摻雜雜質所組成,會吸收一部分該初始光線以發射出 波長相異之螢光光線,其中該摻雜雜質係選自氟、氯、溴、 蛾、♦、硫及氮中至少一者; H:\HU\LGC\A34276\97639\97639.doc 1303111 藉由混合該初始光線及螢光光線使該發光二極體元件 成為一多波長光源。 14· 一種發光二極體元件,包含: 一發光二極體晶片,能產生初始光線;以及 一螢光材料,該螢光材料係甴至少一銪致活過氧嶙酸 鹽所組成,會吸收一部分該初始光線以發射出波長相異之 螢光光線; 藉由混合该初始光線及螢光光線使該發光二極體元件 成為一多波長光源。 1 5 ·根據请求項13或14之發光二極體元件,其中該銪致活過氧 磷酸鹽之主體係由過氧磷酸锶銪錳所組成,其化學式為 (Al_x-yBxCy)2P2〇7,該化學式中:A係選自|思、約、鋇、 鎮、鋅及鎘中至少一者;3係選自銪、錳、鉬及鈽中至少 一者;C係選自銪、猛、|目及飾中至少一者。 16. 根據請求項13或14之發光二極體元件,其中該銪致活過氡 磷酸鹽之主體係由過氧磷酸鋰銪錳所組成,其化學式為 (Sr〗_x_yEux]VIny)2P2+z07 ’該化學式中x、乂及z需要滿足下列 各關係·· 0.03$ 0.08,〇.〇6$ 0.16,〇$ 〇 〇5。 17. 根據請求項1、6、9、10、13或14之發光二極體元件,其 另包含一可固定該發光二極體晶片之導線架。 18. 根據請求項1、6、9、10、13或14之發光二極體元件,其 中該發光二極體元件係侧面發光之元件。 19·根據請求項1、6、9、10、13或14之發光二極體元件,其 另包含_可固定該發光二極體晶片之基板。 [.\HU\LGC\A34276\97639\97639.doc -4- 1303111 2 〇.根據請求項1、6、9、1 〇、 中混光後之多波長光線係 線0 1 3或14之發光—極體元件’其 白光及白光系中間色中一種光 21. 22. 根據請求項Η或10之發先二極體元件,其中該螢光材料 係直接覆蓋於該發光二極體晶片表面。 根據請求項卜6或10之發光二極體元件,其另包含一包覆a different fluorescent light, wherein the doping impurity is selected from at least one of chlorine, bromine, iodine, phosphorus, sulfur, and nitrogen; and the light emitting diode element is formed by mixing the initial light and the fluorescent light Multi-wavelength light source. The light-emitting diode element according to claim 6, wherein the main chemical formula of the bismuth active citrate is AjiO4, wherein the A system is selected from at least one of lithium, calcium, barium, magnesium, zinc and cadmium. 8. The light-emitting diode element according to claim 6, wherein the main system of the bismuth active bismuth citrate is composed of calcium lanthanum citrate, and the chemical formula is (Si^x_yBaxcay) si 〇 4, wherein X and y only need to meet the following set of ®SS: 〇$XS〇.8, 〇$y$〇8; 〇'X$〇5, 〇$y$〇3; 0.5 ^ 0·7,0·2 gy ^ 0.5 . 9. A light-emitting diode device comprising: a light-emitting diode chip capable of generating initial light; and a fluorescent material consisting of at least one bismuth-activated meta- citrate and impurity A portion of the initial light is absorbed to emit a fluorescent light of a different wavelength, wherein the doping impurity is selected from the group consisting of fluorine, chlorine, and bromine, 639. doc H:\HU\LGC\A34276\97639\97<-2 - 1303111 at least one of iodine, helium, sulfur, and nitrogen; the light-emitting diode element is a multi-wavelength light source by mixing the initial light and the fluorescent light. 10. A light-emitting diode component comprising: a light-emitting diode chip capable of generating initial light; and a fluorescent material consisting of at least one active bismuth acid hoof A portion of the initial light emits a fluorescent light having a different wavelength; and the light emitting diode element is a multi-wavelength light source by mixing the initial light and the fluorescent light. The light-emitting diode element according to claim 9 or 10, wherein the main chemical formula of the bismuth activator is ASi〇3, wherein the system A is selected from the group consisting of strontium, calcium, barium, magnesium, and remarks At least one of them. 2. The light-emitting diode element according to claim 9 or 10, wherein the main system of the bismuth-killing salt is composed of calcium bismuth citrate, and the chemical formula is (Sr2_x-yBaxCay)Si〇3 In the chemical formula, 乂 and y only need to satisfy the following set of relations: 〇$χ^ο.8, ο^γ^〇8; 〇^χ^〇5, 〇^0〇3; 〇·5 $ X $ 〇 7, 0.2 gyg 〇·5. 13. A light-emitting diode device comprising: a light-emitting diode wafer capable of generating initial light; and a fluorescent material consisting of at least one bismuth-activated peroxy phosphate and doped impurities And absorbing a portion of the initial light to emit fluorescent light having a different wavelength, wherein the doping impurity is selected from at least one of fluorine, chlorine, bromine, moth, ♦, sulfur, and nitrogen; H:\HU\LGC \A34276\97639\97639.doc 1303111 The light-emitting diode element is made into a multi-wavelength light source by mixing the initial light and the fluorescent light. 14. A light-emitting diode component comprising: a light-emitting diode chip capable of generating initial light; and a phosphor material comprising at least one active peroxometalate that absorbs A portion of the initial light emits a fluorescent light having a different wavelength; and the light emitting diode element is a multi-wavelength light source by mixing the initial light and the fluorescent light. The light-emitting diode element according to claim 13 or 14, wherein the main system of the bismuth-activated peroxyphosphate is composed of manganese lanthanum oxyphosphate having a chemical formula of (Al_x-yBxCy)2P2〇7, In the formula: A is selected from at least one of: Si, about, yttrium, town, zinc, and cadmium; 3 is selected from at least one of lanthanum, manganese, molybdenum, and lanthanum; At least one of the eyes and ornaments. 16. The light-emitting diode element according to claim 13 or 14, wherein the main system of the bismuth-activated bismuth phosphate consists of lithium perovskite bismuth manganese, the chemical formula of which is (Sr〗_x_yEux]VIny)2P2+z07 'In this chemical formula, x, 乂, and z need to satisfy the following relationships. · 0.03$ 0.08, 〇.〇6$ 0.16, 〇$ 〇〇5. 17. The light emitting diode device of claim 1, 6, 9, 10, 13 or 14 further comprising a lead frame for fixing the light emitting diode chip. 18. A light-emitting diode element according to claim 1, 6, 9, 10, 13 or 14, wherein the light-emitting diode element is an element that emits light from the side. 19. The light-emitting diode element according to claim 1, 6, 9, 10, 13 or 14, further comprising a substrate capable of fixing the light-emitting diode wafer. [.\HU\LGC\A34276\97639\97639.doc -4- 1303111 2 〇. According to the request, 1, 6, 9, 1 〇, the multi-wavelength ray line 0 1 3 or 14 after the light is mixed A polar body element 'a light in a white light and a white light intermediate color. 21. 22. The first diode element according to claim 3 or 10, wherein the fluorescent material directly covers the surface of the light emitting diode wafer. According to the light-emitting diode component of claim 6 or 10, the package further comprises a cladding
•亥毛光—極體晶片之模構件,該螢光材料係分佈於該模構 件内。 23 ·根據明求項丨丨之發光二極體元件,其中該螢光材料係直接 覆蓋於該發光二極體晶片表面。 24·根據請求項15之發光二極體元件,其中該螢光材料係直接 覆蓋於該發光二極體晶片表面。 25. 根據請求項16之發光二極體元件,其中該螢光材料係直接 覆蓋於該發光二極體晶片表面。 26. 根據明求項丨丨之發光二極體元件,其另包含一包覆該發光 二極體晶片之模構件,該螢光材料係分佈於該模構件内。 27·根據請求項15之發光二極體元件,其另包含一包覆該發光 一極體B曰片之模構件,該螢光材料係分佈於該模構件内。 I根據請求項16之發光二極體元件,其另包含-包覆該發光 一極體曰曰片之模構件,該螢光材料係分佈於該模構件内。 29· -種發光二極體元件之製造方法,其包含下列步驟: 口定並電性連結一發光二極體晶片於一支撐載體上; 以及 將赏光材料置於該發光二極體晶片發出光線可照射 [AHU\LGC\A34276\97639\97639.doc 1303111 到之處,該榮光材料係由一銪致活 ^ 蛛土族氧化物盥第一 按雜雜貝、一銷致活發酸趨盘裳_ /、 ,、弗—摻雜雜質、一銪致活準 矽酸鹽及一銪致活過氧磷酸鹽 ^ b 斤 芏/ 一種銪致活化合物 所組成,其中該弟一摻雜雜質係選 & 、’、、目氟 '氯、溴、埃、磷、 硫及氮中至少一者及第二摻雜雜質 貝係坻自虱、溴、碘、磷、 硫及氮中至少一者; 藉由使該發光二極體晶片發射 知耵出初始光線以激發該銪 致活驗土族氧化物的螢光材料產生螢光光線,混合該初始 光線及螢光光線後使該發光二極體元件成為—多波長光 源0 30·根據請求項29之發光二極體元件之製造方法’其中該鎖致 活之鹼土族氧化物之主體係由氧化鎂(Mg〇)、氧化約 (CaO)、氧化(Sr〇)、氧化鋇(㈣)、氧化鎮約 ㈣((Mg,Ca,Sr,Ba)0)、氧化鎂銷鋇((Mg,Sr,Ba)〇)、 氧化約銷鋇((Ca,Sr,Ba)0)及氧化銘領((Sr,Ba)〇)之鎖 致活之鹼土族氧化物中至少一者所組成。 31. 根據請求項29之發光二極體元件之製造方法,其中該螢光 材料係選自所述銪致活之鹼土族氧化物,並以不同組成比 例所形成的化合物及混合物中之至少一種形式存在。 32. 根據請求項29項之發光二極體元件之製造方法,其中該銪 致活之鹼土族氧化物螢光材料可以是二價銪致活之氧化 鎮妈銷鋇((Mgr,Cax,Sry,Baz)〇:sEu2+)、二價銪致活之氧 化鎂鳃鋇((Mga5Srb,Bae)0:sEu2+)、二價銪致活之氧化锶 鎖((Bai5 Srj)0:sEu2+),化學式中 a、b、c、i、j、r、s、 H \HU\LGC\A34276\97639\97639 d〇c 1303111 乂、7及2必須滿足下列關係式及等式:0$(3^,(:,丨山1^,:^,:/,:2) € 1、(r+x+y+z+s)=l、(a+b+c+s)=l 及(i+j + spl。 33.根據請求項29項之發光二極體元件之製造方法,其中該銪 致活驗土族氧化物、銪致活石夕酸鹽、銪致活準石夕酸鹽及銪 致活過氧磷酸鹽的螢光材料係以二價銪(Eu2+)作為活化 劑0• The glare-forms of the polar body wafer, the fluorescent material being distributed within the mold member. 23. The light-emitting diode component according to the invention, wherein the phosphor material directly covers the surface of the light-emitting diode wafer. The light-emitting diode element according to claim 15, wherein the fluorescent material directly covers the surface of the light-emitting diode wafer. 25. The light emitting diode component of claim 16, wherein the phosphor material directly overlies the surface of the light emitting diode wafer. 26. The light emitting diode device according to the invention, further comprising a mold member covering the light emitting diode chip, the fluorescent material being distributed in the mold member. The light-emitting diode element according to claim 15, further comprising a mold member covering the light-emitting diode B, wherein the fluorescent material is distributed in the mold member. I. The light-emitting diode component of claim 16, further comprising - a mold member encasing the light-emitting one-pole wafer, the fluorescent material being distributed within the mold member. A method of manufacturing a light-emitting diode element, comprising the steps of: electrically and electrically connecting a light-emitting diode chip on a support carrier; and placing a light-receiving material on the light-emitting diode chip to emit light It can be irradiated [AHU\LGC\A34276\97639\97639.doc 1303111 Wherever it goes, the glory material is made by a glimpse of the ^ arachnid oxide 盥 盥 盥 盥 盥 盥 盥 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 /,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, At least one of -, ',, fluoro" chlorine, bromine, arsenic, phosphorus, sulfur, and nitrogen, and at least one of the second doping impurities, at least one of argon, bromine, iodine, phosphorus, sulfur, and nitrogen; The fluorescent light is generated by causing the light-emitting diode wafer to emit a fluorescent material that excites the initial light to excite the active earth oxide, and the initial light and the fluorescent light are mixed to make the light-emitting diode element - multi-wavelength light source 0 30. LED according to claim 29 The manufacturing method of the component 'the main system of the lock-activated alkaline earth oxide is composed of magnesium oxide (Mg 〇), oxidized about (CaO), oxidized (Sr〇), cerium oxide ((iv)), oxidized town (four) (( Mg, Ca, Sr, Ba) 0), Magnesium oxide pin 钡 ((Mg, Sr, Ba) 〇), oxidized about pin 钡 ((Ca, Sr, Ba) 0) and oxidized Ming collar ((Sr, Ba) 〇) The lock-activated alkaline earth oxide consists of at least one of them. 31. The method of producing a light-emitting diode element according to claim 29, wherein the fluorescent material is selected from the group consisting of at least one of a compound and a mixture of the cerium-activated alkaline earth oxide and formed in different composition ratios. Form exists. 32. The method of fabricating a light-emitting diode element according to claim 29, wherein the bismuth-activated alkaline earth oxide fluorescent material is a oxidized granule of divalent strontium (Mgr, Cax, Sry) , Baz) 〇: sEu2+), bivalent strontium-activated magnesium oxide strontium ((Mga5Srb, Bae) 0: sEu2+), bivalent strontium-activated oxidative hydrazine ((Bai5 Srj) 0: sEu 2+), in the chemical formula a, b, c, i, j, r, s, H \HU\LGC\A34276\97639\97639 d〇c 1303111 乂, 7 and 2 must satisfy the following relationship and equation: 0$(3^,( :,丨山1^,:^,:/,:2) € 1, (r+x+y+z+s)=l, (a+b+c+s)=l and (i+j + The method for producing a light-emitting diode element according to claim 29, wherein the living earth oxide, the strontium, the living salt, the bismuth and the bismuth The phosphorescent material of oxyphosphate is based on divalent europium (Eu2+) as the activator.
3 4 _根據睛求項2 9之發光二極體元件之製造方法,其中該销致 活矽酸鹽之主體化學式為AjiCU,該化學式中A係選自 錯、辑、鋇、鎮、鋅及録中至少一者。 35·根據請求項29之發光二極體元件之製造方法,其中該銪致 /舌石夕酸鹽之主體係由石夕酸約銀鋇所組成,其化學式為 (Sr2-x_yBaxCay)Si04,該化學式中乂及y僅需要滿足下列一 組關係式:O^xSO.8, 0gyg0 8; 〇$χ$〇 5, 3 ; 〇.5$ 0.7,0.2$ 0.5。 36. 根據請求項29之發光二極體元件之製造方法,其中該銪致 活準矽酸鹽之主體化學式為ASi〇3,該化學式中A係選自 鳃、鈣、鋇、鎂、鋅及鎘中至少一者。 37. 根據請求項29之發光二極體元件之製造方法,i中該銷致 活一夕酸鹽的營光材料可具有換雜雜質,該捧雜雜質係選 自氟、氯、溴、碘、磷、硫及氮中至少—者。 38. 根據請求項29之發光二極體元件之製造方法,其中該鎖致 活準石夕酸鹽之主體係由準石夕酸㈣鋇所組成,其化學式為 ㈣―”BaxCay)Si〇3,該化學式中认y僅需要滿足下列一 組關係式:ow〇.8,〇W;〇^〇5〇¥〇3; IVHU\LGC\A34276\97639\97639.doc -7- Ι3031Π 0.5 $ 0·7,0.2S 〇·5。 3 9·根據請求項29之發光二極體元件之製造方法,其中該鎖致 活過氧稱酸鹽之主體係由過氧磷酸錯銪猛所組成,其化學 式為(AwBxCy)2P207,該化學式中:a係選自锶、舞、 鋇、鎮、鋅及鑛中至少一者,B係選自銪、|孟、|目及鈽中 至少一者;C係選自銪、錳、鉬及鈽中至少一者。 40·根據請求項29之發光二極體元件之製造方法,其中該鎖致 活過氧構酸鹽的螢光材料可具有摻雜雜質,其摻雜雜質係 遙自氟、氯、>臭、硬、鱗 '硫及I中至少一者。 41·根據請求項29之發光二極體元件之製造方法,其中該銪致 活過氧磷酸鹽之主體係由過氧磷酸锶銪錳所組成,其化學 式為(8Γι_χ_γΕιιχΜ%)2Ρ2+ζ〇7,其中χ、7及z需要滿足下列各 關係· 0.03^x^0.08,〇.〇6$y$〇.i6, 42·根據清求項29之發光二極體元件之製造方法,其中該支撐 載體係一導線架。 43, 根據請求項29之發光二極體元件之製造方法,其中該支撐 載體係一基板。 44. 根據請求項29之發光二極體元件之製造方法,其中混光後 之多波長光線係白光及白光系中間色中一種光線。 45·根據請求項29之發光二極體元件之製造方法,其中該螢光 材料係直接覆蓋於該發光二極體晶片表面。 46.根據請求項29之發光二極體元件之製造方法,其另包含覆 蓋一模構件在«光二極體晶片及支標载體上之步驟。 47·根據請求項46之發光二極體元件之製造方法,其十該發光 H:\HU\LGC\A34276\97639\97639.doc .1303111 材料係分佈於該模構件内。 48. 根據請求項29之發光二極體元件之勢 咬乃决,其中該技朵 材料為粉狀且與液態膠體先行混合,紗 ^ + …、俊再以點膠、塗 佈、印刷及㈣中-種方式將混合後之榮光材料置於 光二極體晶片表面。 % 49. 根據請求項29之發光二極體元件之製造方法,其中該榮光 材料包含螢光粉,其與膠體形成— 化且經壓模後形成一模構件。 50. 根據請求項29之發光二極體元件之製造方法,其中該榮光 材料包含粉狀顆粒,其舆液態膠體先行混合並形成薄膜’ 該薄膜接受適當能量後,融化並附著於該發光二極體晶片 表面。 51. 根據請求項46之發光二極體元件之製造方法,其中該導線 架可使該發光二極體元件形成側面發光之元件。3 4 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ At least one of the records. 35. The method of producing a light-emitting diode element according to claim 29, wherein the main system of the bismuth/salt acid salt is composed of a silver sulphate, and the chemical formula is (Sr2-x_yBaxCay)Si04. In the chemical formula, 乂 and y only need to satisfy the following set of relations: O^xSO.8, 0gyg0 8; 〇$χ$〇5, 3 ; 〇.5$ 0.7, 0.2$ 0.5. The method for producing a light-emitting diode element according to claim 29, wherein the main chemical formula of the bismuth activator is ASi〇3, wherein the system A is selected from the group consisting of strontium, calcium, barium, magnesium, zinc and At least one of cadmium. 37. The method of fabricating a light-emitting diode element according to claim 29, wherein the camping material of the pin-activated acid salt has a impurity, the impurity selected from the group consisting of fluorine, chlorine, bromine, and iodine. At least one of phosphorus, sulfur and nitrogen. 38. The method of producing a light-emitting diode element according to claim 29, wherein the main system of the lock-activated quasi-salt acid salt is composed of quasi-lithic acid (tetra) ruthenium, and the chemical formula is (4) - "BaxCay" Si〇3 In the chemical formula, y only needs to satisfy the following set of relations: ow〇.8, 〇W; 〇^〇5〇¥〇3; IVHU\LGC\A34276\97639\97639.doc -7- Ι3031Π 0.5 $ 0 7. The method of manufacturing a light-emitting diode element according to claim 29, wherein the main system of the lock-activated peroxyacid salt is composed of peroxyphosphoric acid. The chemical formula is (AwBxCy) 2P207, wherein: a is selected from at least one of 锶, dance, 钡, 镇, zinc, and ore, and B is at least one selected from the group consisting of 铕, 孟, 目, and ;; C And a method for producing a light-emitting diode element according to claim 29, wherein the fluorescent material of the lock-activated peroxyacid salt may have doping impurities The doping impurity is at least one of fluorine, chlorine, > odor, hard, scale, sulfur, and I. 41. The method of manufacturing the light-emitting diode element according to claim 29, The main system of the bismuth-activated peroxyphosphate is composed of bismuth manganese peroxyphosphate, and its chemical formula is (8Γι_χ_γΕιιχΜ%) 2Ρ2+ζ〇7, wherein χ, 7 and z need to satisfy the following relationships: 0.03^x ^0.08,〇.〇6$y$〇.i6, 42. The method of manufacturing the light-emitting diode element according to claim 29, wherein the support carrier is a lead frame. 43. The light-emitting diode according to claim 29. A method of manufacturing a body member, wherein the support carrier is a substrate. 44. The method of fabricating a light-emitting diode device according to claim 29, wherein the multi-wavelength light after the light mixing is one of a white light and a white light intermediate color. The method of manufacturing a light-emitting diode element according to claim 29, wherein the fluorescent material directly covers the surface of the light-emitting diode wafer. 46. The method of manufacturing the light-emitting diode element according to claim 29, further comprising The step of covering a module member on the photodiode wafer and the support carrier. 47. The method for manufacturing the light-emitting diode element according to claim 46, wherein the illumination H:\HU\LGC\A34276\97639\ 97639.doc .1303111 Material Fraction In the mold member. 48. According to claim 29, the potential of the light-emitting diode element is determined, wherein the technical material is powdered and mixed with the liquid colloid, the yarn is ^ + ..., and then dispensed, Coating, printing, and (4) medium-sized method of placing the mixed glare material on the surface of the photodiode wafer. The method of manufacturing the luminescent diode element according to claim 29, wherein the glare material comprises phosphor powder, It forms a mold with the colloid and forms a mold member after compression molding. 50. The method of fabricating a light-emitting diode element according to claim 29, wherein the luminescent material comprises powdery particles, and the liquid colloid is first mixed and formed into a film. After the film receives appropriate energy, it melts and adheres to the light-emitting diode. Body wafer surface. The method of fabricating a light-emitting diode element according to claim 46, wherein the lead frame allows the light-emitting diode element to form a side-emitting element.
H:\HU\LGC\A34276\97639\97639.docH:\HU\LGC\A34276\97639\97639.doc