CN1155050C - 三维结构存储器的制造方法 - Google Patents

三维结构存储器的制造方法 Download PDF

Info

Publication number
CN1155050C
CN1155050C CNB988038366A CN98803836A CN1155050C CN 1155050 C CN1155050 C CN 1155050C CN B988038366 A CNB988038366 A CN B988038366A CN 98803836 A CN98803836 A CN 98803836A CN 1155050 C CN1155050 C CN 1155050C
Authority
CN
China
Prior art keywords
substrate
bonding
interconnection
memory
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB988038366A
Other languages
English (en)
Other versions
CN1268925A (zh
Inventor
���ס�J������
格伦·J·利迪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=25268870&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=CN1155050(C) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Individual filed Critical Individual
Publication of CN1268925A publication Critical patent/CN1268925A/zh
Application granted granted Critical
Publication of CN1155050C publication Critical patent/CN1155050C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
    • G11C29/846—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by choosing redundant lines at an output stage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/04—Supports for storage elements, e.g. memory modules; Mounting or fixing of storage elements on such supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/50—Peripheral circuit region structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/44—Indication or identification of errors, e.g. for repair
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/81—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a hierarchical redundancy scheme
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
    • G11C29/848—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by adjacent switching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29109—Indium [In] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29111—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29116—Lead [Pb] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/29118—Zinc [Zn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/29124—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29144—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29147—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29155—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/29166—Titanium [Ti] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/29169—Platinum [Pt] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/808—Bonding techniques
    • H01L2224/80801—Soldering or alloying
    • H01L2224/8082—Diffusion bonding
    • H01L2224/8083—Solid-solid interdiffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Non-Volatile Memory (AREA)
  • Hall/Mr Elements (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

一种三维结构(3DS)存储器(100)使得能够将存储器电路(103)和控制逻辑(101)物理上分离到不同的层(103)上，致使可以分别地优化各个层。几个存储器电路(103)有一个控制逻辑(101)就够了，从而降低了成本。3DS存储器(100)的制造涉及到将存储器电路(103)减薄到厚度小于50微米以及将电路键合到电路叠层，同时仍然呈晶片衬底形式。采用了细粒高密度层间垂直总线互连(105)。3DS存储器(100)制造方法使得能够实现几种性能和物理尺寸效能，并且是用现有的半导体工艺技术实现的。

Description

三维结构存储器的制造方法
本发明涉及到叠层集成电路存储器。
提高电子电路性能和降低其成本的制造方法，毫无例外地是提高电路集成度和减小相等数量的诸如晶体管或电容器之类的电子器件所占据的物理尺寸的方法。这些方法已经生产了每秒钟能够运行一亿次的成本低于1000美元的1996微处理器和数据存储时间小于50毫微秒的成本低于50美元的64兆位DRAM电路。这种电路的物理尺寸小于2cm2。这些制造方法很大程度上支撑着主要工业化国家的经济生活标准，并在全球人民的日常生活中肯定会继续具有重大影响。
电路制造方法有二种主要形式：工艺集成和装配集成。历史上，这二种制造科目之间的界线是很清楚的，但随着MCM(多芯片模块)和倒装片管芯安装的使用的出现，这一清晰的分隔可能会很快地消失。(相对于例如封装形式中的集成电路，此处的术语“集成电路(IC)”主要是用于切自半导体晶片之类的电路衬底的单个管芯中的集成电路)。在初期的管芯形式中，大多数IC现在是单独封装的，但越来越多地使用MCM。MCM中的管芯通常用诸如金属丝键合、DCA(直接芯片安装)或FCA(倒装片安装)之类的常规IC管芯I/O互连键合方法，以平面形式被安装到电路衬底。
诸如DRAM、SRAM、快速EPROM、EEPROM、铁电存储器、GMR(巨磁阻)之类的集成电路存储器，具有共同的结构特性，即与控制电路单片集成在同一个具有存储器阵列电路的管芯上。对于大存储器电路，这样构成的(标准或常规的)结构即电路布局结构就在控制电路与存储器阵列电路之间产生了设计折中限制。制造过程中存储器单元电路的几何尺寸的减小已经导致了密度越来越高的存储器IC，但这种更高的存储器密度已经导致了以牺牲更大的IC面积为代价的更尖端的控制电路。更大的IC面积至少意味着单位IC的更高的制造成本(每个晶片的IC更少)以及更低的IC成品率(每个晶片可工作的IC更少)，而在最坏的情况下，由于成本无竞争性或运行不可靠而导致无法制造的IC设计。
随着存储器密度的增大和单个存储器单元尺寸的减小，需要更多的控制电路。在诸如DRAM之类的某些情况下，存储器IC的控制电路所占IC面积的百分数接近或超过40％。一部分控制电路是读出放大器，它在读出操作过程中对存储器阵列电路中的存储器单元的状态、电位或电荷进行读出。读出放大器电路是控制电路的主要部分，改善读出放大器的灵敏度，以便读出甚至更小的存储器单元同时又防止读出放大器所用的面积变得太大，是对IC存储器设计者的一个永恒的挑战。
如果没有这一控制电路和存储器电路之间的限制或折中，则能够将控制电路制造成执行大量的额外功能，诸如对每个存储器单元进行多重存储状态的读出、通过更灵敏的读出放大器进行更快的存储器存取、超高速缓存、刷新、地址转换等等。但这一折中是目前所有制造厂家所制造的存储器IC的物理的和经济的现实。
DRAM电路的容量每代之间以4倍的因子增加，例如1兆位，4兆位，16兆位，64兆位DRAM。电路存储器容量的这一每代4倍的增大，已经导致了越来越大的DRAM电路面积。在引入新一代DRAM的时候，电路成品率太低，因而大量制造是不合算的。在新一代DRAM的实验性样品出现的日期与大量生产这种电路的日期之间，通常要几年。
在本发明人的美国专利5354695中，公开了以叠层即三维(3D)方式来装配管芯，此处列为参考。而且，还试图以3D方式装配存储器管芯。德克萨斯州Dallas的德州仪器公司、加州Costa Mesa的IrvineSemsors以及加州Scotts Valley的Cubic Memory公司，都已试图生产叠层即3D DRAM产品。在所有三种情况下，管芯形式的常规DRAM都被层叠起来，并沿电路叠层的外表面制作叠层中各个DRAM之间的互连。这些产品已经销售几年了，并已证明对于商业应用来说是太昂贵了，但由于其物理尺寸即脚印(footprint)小，故在空间及军事应用中已经得到了一些应用。
DRAM电路类型被认为是并常常被用作本说明书的样品，然而，本发明显然不局限于DRAM类型电路。诸如EEPROM(电可擦可编程只读存储器)、快速EPROM、铁电存储器、GMR(巨磁阻)或这些存储器单元的组合之类的存储器单元类型，无疑也能够用于本三维结构(3DS)方法来制作3DS存储器器件。
本发明还有下列其它的目的：
1.比之仅仅用单片电路集成方法常规制造的电路，存储器每兆位的制造成本降低几倍。
2.比之常规制造的存储器电路，性能高几倍。
3.比之常规制造的存储器电路，单位IC的存储器密度高许多倍。
4.设计者对电路面积尺寸因而对成本的更大的控制权。
5.用内部控制器对存储器单元进行电路的动态和静态自测试。
6.动态错误恢复和重构。
7.每个存储器单元的多层存储。
8.虚拟地址变换、地址分屏(address windowing)、诸如间接寻址或按内容寻址的各种寻址功能、模拟电路功能、以及各种图象加速和微处理器功能。
本3DS存储器技术是一种叠层即3D电路装配技术。其特点包括：
1.存储器电路与控制逻辑，物理上分隔在不同的层上；
2.几个存储器电路用一个控制逻辑；
3.存储器电路被减薄到厚度小于约50微米，形成一个具有平坦的加工过的键合表面的基本上柔软的衬底，并在仍然处于晶片衬底形式的情况下，将电路键合到电路叠层；以及
4.采用细粒高密度层间垂直总线连接。
3DS存储器制造方法使得能够实现几种功能和物理尺寸效能，并用现有的半导体工艺技术加以实现。以DRAM电路作为例子，用0.25微米工艺制造的64兆位DRAM可以具有84mm2的管芯尺寸、存储器面积对管芯尺寸的比率为40％、和约为50ns的对8兆位存储的存取时间；用同样的0.25微米工艺制造的3DS DRAM IC将具有18.6mm2的管芯尺寸，采用17层DRAM阵列电路，存储器面积对管芯尺寸的比率为94.4％，而对64兆位存储的存取时间可望小于10ns。3DS DRAMIC制造方法代表了相对于常规DRAM IC制造方法的每兆位成本的可观的几倍的降低。换言之，3DS存储器制造方法在基本结构层面上代表了与所用的工艺制造技术无关的十分重要的成本节省方法。
结合附图，从下列描述中可以进一步了解本发明。在这些附图中：
图1a是用方法A或方法B制造的3DS DRAM IC的示意图，显示了与常规IC管芯相同的I/O键合焊点的物理状态；
图1b是3DS存储器IC的剖面图，示出了几个减薄了的电路层之间的金属键合互连；
图1c是面朝下键合和互连在一个较大的常规IC或另一个3DS IC上的3DS DRAM IC的示意图；
图2a示出了具有一组数据线总线即一个端口的3DS DRAM阵列电路块的物理布局；
图2b示出了具有二组数据线总线即二个端口的3DS DRAM阵列电路块的物理布局；
图2c示出了部分典型存储器控制器电路的物理布局；
图3示出了3DS DRAM阵列电路的物理布局，示出了(64)3DSDRAM阵列块各部分；
图4是减薄了的衬底中的普通3DS垂直互连或连接线的剖面图；
图5示出了用来向下选择栅线读出或写入选择的3DS存储器多路复用器的布局。
参照图1a和图1b，3DS(三维结构)存储器器件100是一个所有电路层之间具有细粒垂直互连的集成电路叠层。如从图2a和图2b可见，术语“细粒层间垂直互连”被用来表示穿透电路层的导体，它具有或不具有插入的器件元件，且标称间距小于100微米，更典型是小于10微米，但不限制小于2微米的间距。细粒层间互连也起将各个电路层键合到一起的作用。如图1b所示，虽然键合和互连层105a和105b等最好是金属，但如以下更充分地所述，也可以使用其它材料。
键合和互连层105a和105b等中的图形107a和107b等，确定了集成电路各层之间的垂直互连接触，并用来使这些接触彼此电隔离以及与其余的键合材料电隔离；此图形在键合层中取空洞或介电质填充的间隔的形式。
3DS存储器叠层通常被组织成控制器101和数目一般为9-32个的存储器阵列电路层103，但对层数没有特别的限制。控制器电路是标称电路厚度(通常为0.5mm或更厚)，但各个存储器阵列电路层是减薄了的基本上柔软的净应力低的电路，其厚度小于50微米，通常小于10微米。在最终的存储器阵列电路层上制作常规I/O键合焊点，以便用于常规封装方法。可以使用诸如插入互连(公开在本发明人的美国专利5323035和5453404中)、DCA(直接芯片安装)或FCA(倒装片安装)方法之类的其它金属图形。
细粒层间垂直互连还可以用于3DS存储器管芯与常规管芯(其中常规管芯可以是图1c所示的控制器电路)之间的或3DS存储器管芯与另一个3DS存储器管芯之间的直接单个管芯键合；应该设想的是，待要键合到一起的各个芯片的面积(尺寸)可以不同，不必完全相同。更确切地说，参照图1c，3DS DRAM IC叠层100被面朝下键合并互连在一个较大的常规IC或另一个3DS IC 107上。3DS叠层100也可以只由具有DRAM控制器电路作为较大管芯部分的DRAM阵列电路组成。若DRAM控制器电路是较大管芯部分，则可能要求细粒垂直总线互连(在3DS DRAM IC叠层100的表面109处)将3DS DRAM阵列电路连接到DRAM控制器，否则较大晶粒的常规互连可能进入(图形化)到整平了的键合层中。
如图3所示，各个存储器阵列电路层包括由存储器阵列块301(标称面积小于5mm2)组成的存储器阵列电路300，且各个块由存储器单元(以与DRAM或EEPROM电路的单元阵列很相似的方式)、总线电极、以及按设计者的意思用来选择存储器阵列的特定行或列的启动栅组成。控制电路由通常在诸如常规DRAM之类的单片设计的典型存储器电路的外围可能找到的读出放大器、地址、控制和驱动逻辑组成。
细粒总线独立于各个存储器阵列层垂直连接控制器，使控制器能够将驱动(功率)或启动信号提供给任一层而不影响其它任何一层的状态。这使控制器能够独立地对各个存储器电路层进行测试、读出或写入。
图2a和图2b示出了诸如图3的块301的存储器阵列的可能块的布局的例子。虽然只示出了块的一部分，但在所示的实施例中，各个块呈现横向对称，致使可以从所示的部分确定整个块的布局。各个参考号后面的缩写“T”、“L”和“TL”分别被用来表示“上”、“左”和“左上”，表示图中未示出的相应元件。
参照图2a，块的核心部分200由大量的存储器单元组成。逻辑上说，存储器单元集合可以再分成各含有例如由64兆位存储器单元组成的8×8阵列的“宏单元”201。在核心的外围制作了细粒垂直互连，它包含以下参照图4更详细地描述的层间键合和总线接触金属化400。细粒垂直互连包括I/O功率和接地总线203TL、存储器电路层选择205T、存储器宏单元列选择207T、数据线209L和栅线多路复用器(“mux”)选择209TL。在所示实施例中，栅线多路复用器211T是4:1多路复用器，用来在8列宽的存储器宏单元列中选择4列中的1个。相应的下侧4:1多路复用器与上侧多路复用器211T组合形成等效8:1多路复用器，用来从8栅线宽的存储器宏单元列中选择一个栅线。
图5示出了4:1栅线总线多路复用器500的一种实现。栅线启动209TL(例如制作在金属层1中)分别控制晶体管501a-501d。耦合到晶体管的是各个栅线503a-503d。同时部分可看到的是耦合到相应4:1多路复用器(未示出)的栅线505a-505d。当一个栅线启动被激活时，相应的栅线被耦合到多路复用器(例如制作在金属层2中)的输出线507。输出线通过线509(例如制作在金属层3中且相应于垂直总线互连的金属接触400)和钨栓511和513，被连接到一个或更多个垂直总线接触。钨栓513将线509连接到垂直互连(未示出)。
再次参照图2a，在存储器电路层的情况下，此层也可以包括来自控制器层启动信号205T的输出线启动(栅)，对其可以提供I/O启动(栅)213。
要注意的是，在存储器层面处，各个存储器块301与每个其它的存储器块301是电隔离的。因此，各个存储器块的成品率几率是独立的。
同可以增加额外的栅线垂直互连一样，可以增加额外的读出/写入端口；额外的垂直互连能够以冗余的方式被采用，以便改善垂直互连成品率。3DS存储器电路能够被设计成具有一个或更多个数据读出和写入总线端口互连。参照图2b，存储器块301’被示为具有端口P0(209L)和另一个端口P1(209L’)。对垂直互连数目的唯一限制是这种垂直互连加在电路成本上的杂项开支(overhead)。细粒垂直互连方法在仅仅增加百分之几的管芯面积的情况下，使每个块能够有上千的互连。
作为一个例子，图2b所示的具有二个读出/写入端口并在0.35微米或0.15微米设计规则中完成的4兆位DRAM存储器块的垂直互连的杂项开支由接近5000个连接组成，并小于存储器阵列块总面积的6％。因此，3DS DRAM电路中的每个存储器阵列电路层的垂直互连杂项开支小于6％。这显著小于目前在单片DRAM电路设计中遇到的非存储器单元面积能够超过40％的情况。在完成了的3DS DRAM电路中，非存储器单元面积的百分比通常小于叠层结构中所有电路总面积的10％。
3DS存储器器件去耦通常在单片存储器电路的存储器单元邻近发现的控制功能，并将它们分离到控制电路。控制功能不出现在常规存储器IC中的各个存储器阵列层上，而只在控制电路中出现一次。这就产生了一个节省的办法，使几个存储器阵列层共用同一个控制逻辑，因而比常规存储器设计降低了高达二倍的单位存储器单元的净成本。
控制功能向分立控制电路的分离，使得这种功能可以有更大的面积(即等于一个或几个存储器阵列块的面积)。功能的这一物理分离还使二个用于控制逻辑和存储器阵列的非常不同的制造工艺能够分离，再次实现了比之用于常规存储器的更复杂的组合逻辑/存储器制造工艺的额外制造成本的节省。存储器阵列也可以在不考虑控制逻辑功能的工艺要求的工艺技术中制造。这导致能够以低于目前存储器电路的成本来设计性能更高的控制器功能。而且，也可以用较少的工艺步骤来制造存储器阵列电路，标称降低存储器电路制造成本30％-40％(例如，在DRAM阵列的情况下，对于CMOS，工艺技术能够被限制到NMOS或PMOS晶体管)。
因此，虽然用热扩散金属键合方法使存储器控制器衬底和存储器阵列衬底的足够平坦的表面键合是比较好的，但在本发明的较广泛的情况下，本发明试图用诸如各向异性导电环氧树脂粘合剂之类的各种常规表面键合方法来键合分立的存储器控制器和存储器阵列衬底，以便形成二者之间的互连以提供随机存取数据存储。
参照图2c，示出了部分示范性存储器控制电路的布局。层间键合和总线金属化的图形与前述图2a的相同。然而，提供了例如包括读出放大器和数据线缓冲器215的存储器控制器电路来代替大量的存储器单元。由于增大了管芯的可用面积，故多层逻辑可以与读出放大器和数据线缓冲器215一起制造。还示出了地址译码器、栅线和DRAM层选择逻辑217、刷新和自测试逻辑219、ECC逻辑221、开屏逻辑(windowing logic)223等。要注意的是，除了通常在DRAM存储器控制器电路中的功能外，还提供了自测试逻辑、ECC逻辑和开屏逻辑。依赖于管芯尺寸或使用的控制器电路的数目，也可以提供任何大量的其它功能，例如包括虚拟存储器安排、诸如间接寻址或内容寻址之类的地址功能、数据压缩、数据解压缩、声频编码、声频译码、视频编码、视频译码、声音识别、手写体识别、功率安排、数据库处理、图象加速功能、微处理器功能(包括加入一个微处理器衬底)等。
3DS存储器电路管芯的尺寸不依赖于对一个单层上的存储器单元和控制功能逻辑的必要数目的这一限制。这使电路设计者能够减小3DS电路管芯的尺寸或选择对电路成品率最佳的管芯尺寸。3DS存储器电路管芯尺寸主要是用来制造最终3DS存储器电路的存储器阵列块的尺寸和数目以及存储器阵列层的数目的函数。(如下所述，19层的0.25微米工艺的3DS DRAM存储器电路的成品率可以呈现为大于90％。)选择3DS电路管芯尺寸的这一优点，使得能够比常规单片电路设计可以在制造中更早地使用更先进的工艺技术。这当然意味着比常规存储器电路额外的成本降低和功能提高。
3DS存储器器件的制造方法
3DS存储器电路有二种基本的制造方法。但此二种3DS存储器制造方法具有共同的目的，即大量电路衬底被热扩散金属键合(也称为热压键合)到坚固的支持件即公共衬底上，此公共衬底本身也可以是电路的元件层。
支持件即公共衬底可以是标准的半导体晶片、石英晶片或能够适应3DS电路工艺步骤、电路运行和所使用的工艺设备的任何材料组分构成的衬底。支持衬底的尺寸和形状是最大限度优化可获得的制造设备和方法的一种选择。通过各种方法将电路衬底键合到支持衬底，然后进行减薄。电路衬底可以制作在标准的单晶半导体衬底上，或作为多晶电路制作在诸如硅或石英之类的适当的衬底上。
多晶硅晶体管电路具有重要的成本节约选择余地，即加入一个分离层(膜)，使其上制作了多晶硅电路的衬底能够分离并重新使用。多晶硅晶体管或TFT(薄膜晶体管)器件被广泛地使用，也不一定仅仅由硅制成。
利用通常是铝的二个金属表面的热扩散，将3DS存储器电路的各个电路层键合到一起。待要键合的电路的表面是光滑的且足够平整，正如未被加工的半导体晶片或已经用CMP(化学机械工艺)方法整平过的已被加工过的半导体晶片的表面情况那样，至少在待要键合的电路(制作在衬底上)的表面区域上，表面平整度小于1mm，最好是小于1000埃。待要键合的电路表面上的金属键合材料被图形化成彼此成镜象，从而确定图2a、图2b、图2c和图5所示的各个垂直互连接触。键合二个电路衬底的步骤导致在二个电路层即衬底之间同时形成垂直互连。
电路层的热扩散键合最好在具有受控压力和诸如含有少量H2O和O2的N2气氛的设备工作室中进行。键合设备对准待要键合的衬底的图形，然后用一组编程压力和用作键合材料的金属的类型所要求的一定时间的一种或更多种温度，将它们压到一起。键合材料的标称厚度在500-15000埃的范围内或更大，最佳厚度为1500埃。根据键合图形的设计，衬底键合的开始阶段最后在例如1-740乇的负压这样的低于标准压力的情况下进行。这样可以在键合表面之间留下一个内部负压，一旦回到外部大气压力，这进一步有助于形成键合并增强键合的可靠性。
最佳的键合材料是纯铝或铝的合金，但不局限于铝，例如可以包括在可接受的温度和制作时间内提供可接受的表面键合扩散能力的诸如Sn、Ti、In、Pb、Zn、Ni、Cu、Pt、Au之类的金属或这些金属的合金。键合材料不局限于金属，可以是诸如高导电多晶硅之类的键合材料的组合，其中有些是诸如二氧化硅那样不导电，且上述示范性键合材料选择不应该认为是对如何键合电路层的限制。
在金属键合材料形成表面天然氧化物的情况下，这种氧化物或阻止形成满意的键合，或者还可能增大键合所形成的垂直互连的电阻，必须清除此氧化物。键合设备提供了降低氧化物的能力，使键合材料的键合表面没有天然氧化物。组成降低表面氧化物的气氛的方法是众所周知的，并且有其它的方法来清除天然氧化物，例如溅射腐蚀、等离子体腐蚀或离子研磨腐蚀。在铝被用作键合材料的情况下，最好在键合之前清除键合表面上大约40埃的天然氧化铝薄膜。
3DS存储器电路的减薄了的(基本上柔软的)衬底电路层通常是存储器阵列电路，但减薄了的衬底电路层不局限于存储器电路。其它的电路层类型可以是控制器电路、诸如EEPROM之类的非易失存储器、包括微处理器逻辑的额外的逻辑、以及诸如支持图象或数据库处理的专用逻辑功能等。这些电路层类型的选择遵照电路设计的功能要求而不受3DS存储器制造工艺的限制。
与常规存储器电路制造中更普通地使用的由较高应力的氧化硅和氮化硅组成的介电质相反，最好用诸如低应力的二氧化硅和氮化硅介电质之类的低应力(低于5×108达因/cm2)介电质来制造减薄了的(基本上柔软的)衬底电路。在本发明人的美国专利5354695中，详细地讨论了这种低应力介电质，此处列为参考。具有常规应力水平的介电质可以用于3DS DRAM电路的装配中，但若叠层装配件包含几层以上，则装配件中的各个层必须平衡应力，使层的淀积膜的净应力小于5×108达因/cm2。比之使用各个淀积膜的应力不相等但淀积成产生较低的净平衡应力的方法，采用本来就应力低的淀积膜是较好的方法。
方法A，3DS存储器器件的制造工序
本制造工序假设几个电路层将被键合到一个公共即支持衬底并接着就地减薄。得到的3DS存储器电路的一个例子示于图1a。
1.将第二电路衬底的上侧对准并键合到公共衬底。
2A.将第二电路衬底的背侧即暴露的表面研磨到厚度小于50微米，然后抛光即平滑表面。此减薄了的衬底现在是基本上柔软的衬底。
在器件制造之前，也可以在半导体表面以下在第二衬底中包含一个厚度从小于1微米到几微米的腐蚀停止层。此腐蚀停止层可以是外延制作的诸如GeB之类的薄膜(在本发明人的美国专利5354695和5323035中描述，此处列为参考)或低密度的O2或N2注入层，以便正好在第二衬底的上侧上的器件层下面形成掩埋氧化物或氮化物势垒腐蚀停止层。在初步研磨衬底背侧的主要部分之后，再在化学浴液中对第二衬底背侧的其余部分进行选择性腐蚀，此腐蚀停止于外延层或注入层的表面。如有需要，可以再用抛光和RIE步骤来完成第二衬底的减薄。
作为变通，在器件制造之前，诸如注入到第二衬底的上侧表面中的H2之类的分离层可以用于热处理步骤，以便裂开第二衬底背侧的大部分，使之能够重新利用。
2B.第二电路衬底也可以是能够被专用化学脱模剂激活的诸如铝、钛、AlAs、KBr之类的分离层上的由多晶硅晶体管或TFT组成的电路。然后，在激活(溶解)分离层时，清除第二衬底的背侧，如有需要，则随之以互连半导体工艺步骤。
3.对第二电路衬底的减薄了的背侧进行加工，以便形成诸如图4所示的具有第二衬底的被键合表面侧的垂直互连。背侧加工通常包含介电质和金属淀积物的常规半导体工艺步骤、光刻和RIE，其顺序可以变化很大。背侧加工的完成还将导致相似于上侧键合材料图形的图形化金属层，从而方便额外电路衬底、诸如常规I/O IC键合焊点(金属丝键合)图形的端子图形、3DS存储器电路到另一个管芯(另一个3DS电路或常规管芯)的热扩散键合图形、或用来插入互连、常规DCA(直接芯片安装)或FCA(倒装片安装)的图形的后续键合。
更确切地说，参照图4，当制造有源电路器件时，热生长或淀积一个氧化物掩模401。然后，例如与多晶硅栅制作步骤同时，从高掺杂的多晶硅制作垂直总线接触403。作为变通，接触403也可以用金属制作。然后用常规工艺制作常规DRAM互连结构410。DRAM互连可以包括内部焊点405。晶片的“DRAM加工的”部分420包括各种介电层和金属层。淀积最终钝化层407，之后制作通孔409。然后用常规CMP工艺来获得平坦的表面411。再在最上面的金属层(例如第3金属层)中，对未示出的接触413和键合表面进行图形化。
在将第二衬底的背侧键合并减薄到硅(或其它半导体)衬底415的大约1-8mm之后，对准接触403，制作馈通线417。然后制作钝化层419和接触421。可以制作接触421以便形成接触413的镜象，使其它晶片得以键合。
4.若另一个电路层要键合到3DS电路叠层，则重复步骤1-3。
5A.然后将完成的3DS存储器衬底常规地锯成管芯(单个的)，得到图1a所示类型的电路，并如常规集成电路那样进行封装。
5B.然后将完成的3DS存储器衬底的电路常规地锯开，并以相似于上述步骤1键合电路衬底的方式，单个地对准并热扩散键合(金属图形向下)到第二(常规IC)管芯或MCM衬底的表面。(常规管芯或MCM衬底可以具有比3DS存储器衬底更大的面积，并可以包括图象控制器、视频控制器或微处理器，使3DS被埋置成为另一个电路的一部分。)这一最后键合步骤通常包括3DS存储器电路与管芯或MCM衬底之间的细粒互连，但也可以使用常规的互连图形。3DS存储器电路还可以面朝上键合到管芯形式的常规IC或MCM衬底和用来形成常规I/O互连的金属丝键合。
方法B，3DS存储器器件的制造工序
本制造工序假设电路衬底首先被键合到一个传送衬底，进行减薄，然后键合到公共衬底成为电路叠层。然后分离传送衬底。此方法相对于方法A具有下述优点，即衬底在被键合到最终电路叠层之前能够被减薄，而且能够对衬底电路层同时进行减薄和垂直互连加工。
1.用脱模层即分离层将第二电路衬底键合到传送衬底。传送衬底可以具有高公差的平行表面(总厚度变化TTV小于1微米)，并可以穿一系列的小孔以协助分离过程。分离层可以是平铺淀积的键合金属。不要求表面精确对准。
2.执行方法A的步骤2A或2B。
3.加工第二衬底的背侧，以形成图4所示的具有第二衬底的键合上侧表面的互连。背侧加工通常包含介电质和金属淀积物的常规半导体工艺步骤、光刻和RIE，其顺序可以变化很大。背侧加工的完成还将导致相似于公共衬底的键合材料图形的图形化金属层，从而方便额外电路层的后续键合。
4.将第二电路键合到公共衬底即支持衬底(3DS叠层)，并借助于激活它与第二电路之间的分离层而分离传送衬底。
5.加工第二衬底现在暴露的上侧，以便形成后续衬底键合的互连或常规I/O键合(金属丝键合)焊点图形的端子图形、3DS存储器电路到另一个管芯(另一个3DS电路或常规管芯)的热扩散键合图形、或用于常规插入互连、DCA(直接芯片安装)或FCA(倒装片安装)的图形。若另一个电路层要键合到3DS电路叠层，则重复步骤1-4。
6.执行方法A的步骤5A或5B。
提高3DS存储器器件的成品率的方法
3DS电路可以被认为是一种垂直装配的MCM(多芯片模块)，且其最终成品率为完成的3DS电路中各个组成电路(层)的成品率几率的乘积。3DS电路采用几种提高成品率的方法，这些方法在单个存储器IC中的组合应用中是叠加的。用在3DS存储器电路中的提高成品率的方法包括：小的存储器阵列块尺寸、通过物理地孤立即分离垂直总线互连而使存储器阵列块电隔离、备用内部存储器阵列块栅线、备用存储器阵列层(备用块间栅线)、备用控制器以及ECC(错误纠正码)。术语“备用”被用来表示用冗余的元件来替代。
存储器阵列块的选定的尺寸是3DS存储器电路成品率公式中的首要组成部分。各个存储器阵列块被单独地(唯一地)存取，并由控制器电路供电，因此，除了与不同存储器阵列层上的存储器阵列块之外，还与包括同一个存储器阵列层上的存储器阵列块的每个其它存储器阵列块，彼此物理上独立。存储器阵列块的尺寸通常小于5mm2，最好是小于3mm2，但不局限于具体的尺寸。存储器阵列块的尺寸、其NMOS或PMOS制造工艺的简化、以及它与其它存储器阵列块之间的物理独立性，为几乎所有的制造IC的工艺提供了大于99.5％的保守估计的标称成品率。这一成品率假定存储器阵列块中的诸如互连线断开或短路之类的大多数点缺陷或失效的存储器单元可以由块内或块间的冗余栅线备用(替代)。使完成的存储器阵列块无法使用的存储器阵列块中的大多数缺陷，导致用冗余存储器阵列层完全替代此块，否则就废弃此3DS电路。
在3DS DRAM电路例子中，存储器阵列块叠层的成品率由下列成品率公式计算：
Ys＝((1-(1-Py)2)n)b
其中n是DRAM阵列的层数，b是每个DRAM阵列的块数，Py是小于3mm2的DRAM阵列块的有效成品率(几率)。假设在DRAM阵列块线和一个冗余DRAM阵列层中的栅线的DRAM阵列块冗余量为4％，并进一步假设每层的块数为64，叠层中的存储器阵列层数为17，且Py的有效值为0.995，则整个存储器阵列(包括所有存储器阵列块叠层)的叠层成品率Ys为97.47％。
然后将存储器阵列的叠层成品率Ys乘以控制器的成品率Yc。假设管芯尺寸小于50mm2，由0.5微米BiCMOS或混合信号工艺制造的控制器的合理Yc在65％-85％之间，则给出3DS存储器电路的净成品率在63.4％-82.8％之间。若冗余的控制器电路层被添加到3DS存储器叠层中，则成品率几率可以在85.7％-95.2％之间。
借助于可选地使用ECC逻辑，能够进一步提高存储器阵列块的有效成品率。ECC逻辑对某些数据位组的数据位错误进行纠正。运行ECC逻辑所必须的出错位组的各个位可以存储在垂直相关的块叠层中的任何一个存储器阵列层的冗余栅线上。如有需要，为了适应ECC出错位组各个位的存储，还可以将额外的存储器阵列层加入到电路中。
先进的3DS存储器器件控制器的能力
比之常规存储器电路，3DS存储器控制器电路由于控制器电路能够有额外的面积以及可以得到各种混合信号工艺制造技术，而可以具有各种优越的能力。某些这种能力是具有动态栅线地址分配的存储器单元的自测试、虚拟地址转换、可编程地址开屏或绘图、ECC、数据压缩和多层存储。
动态栅线地址分配是利用可编程栅来启动读出/写入操作的层和栅线。这使存储器存储的物理顺序能够分离或不同于存储的存储器的逻辑顺序。
对各代存储器器件进行的测试已经导致了明显增大了的测试成本。借助于组合足够的控制逻辑以执行各个存储器阵列块的内部测试(自测试)，3DS存储器控制器降低了测试成本。按常规ATE方式的电路测试仅仅要求验证控制器电路的功能。内部测试的范围还被延伸到对应于各层上各个存储器阵列块的各个栅线的唯一地址的可编程(动态)分配。借助于重构(替代)在产品中使用3DS存储器电路之后失效的栅线的地址，在3DS存储器电路作为诊断工具和提高电路可靠性的方法的寿命期内的任何时候，都能够使用3DS控制器电路的自测试能力。
ECC是一种电路能力，即如果包括在控制器电路中，它被可编程信号能够启动或关断，或形成一种专用功能。
数据压缩逻辑能够提高可存储在3DS存储器阵列中的数据总量。存在着可用于此目的的各种各样的通常熟知的数据压缩方法。
较大的读出放大器具有较大的动态性能，并能够从存储器单元中进行更高速的读出操作。较大的读出放大器可望提供在每个存储器单元中存储多于一位的信息(多层存储)的能力；在诸如快速EPROM之类的非易失存储器电路中已经表现了这种能力。多层存储也已经被提出用于4千兆位DRAM一代的电路中。
对本技术领域熟练人员来说，显然，本发明可以体现在其它的具体形式中而不超越其构思和主旨特征。因此，此处公开的实施例被认为是说明性的而不是限制性的。本发明的范围由所附权利要求而不是由上述描述来表示，且其等效意义和范围内的改变都被认为包括在其中。

Claims (62)

1.一种制作随机存取存储器的方法，它包含下列步骤：
在第一衬底上制造存储器电路；
在第二衬底上制造存储器控制器电路；以及
键合第一和第二衬底，以便在存储器电路与存储器控制器电路之间形成互连，第一衬底或第二衬底单独都不足以提供随机存取数据的存储，其中所述键合是第一衬底到第二衬底的热扩散键合，且所述衬底中的一个的背侧被减薄并然后被加工，以形成穿过所述衬底的互连，并在所述衬底的背侧上形成接触。
2.权利要求1的方法，其中所述键合是第一衬底到第二衬底的热扩散键合以形成叠层IC结构。
3.权利要求2的方法，其中至少某些所述互连是具有小于100μm间距的细粒垂直互连。
4.权利要求3的方法，包含进一步键合叠层IC结构和另一个衬底的步骤。
5.权利要求4的方法，其中所述进一步键合是叠层IC结构和另一个衬底的彼此热扩散键合。
6.权利要求5的方法，其中所述热扩散键合采用接触间距小于100μm的细粒接触图形。
7.权利要求6的方法，其中所述细粒接触图形形成细粒垂直互连的延伸范围。
8.权利要求1的方法，包含进一步键合叠层IC结构和另一个衬底的步骤。
9.权利要求8的方法，其中所述进一步键合是单个叠层IC结构和另一个衬底的金属丝键合。
10.权利要求1的方法，其中至少某些互连用平面工艺制作。
11.权利要求8的方法，其中所述进一步键合是单个叠层IC结构的细粒垂直互连接触图形和另一个叠层IC或常规电路IC的热扩散金属键合。
12.权利要求8的方法，其中所述进一步键合是单个叠层IC结构的互连接触图形和另一个叠层IC或常规电路IC的热扩散金属键合。
13.权利要求11的方法，其中第一和第二衬底被金属丝键合到第三衬底。
14.权利要求1的方法，其中所述键合是第一衬底到第二衬底的热扩散键合，以形成叠层IC结构，此方法还包含下列步骤：
在至少一个额外的衬底上制造至少一个额外的存储器电路；以及
将至少一个额外的衬底键合到叠层IC衬底，并在至少一个额外的存储器电路和存储器控制器电路之间制作互连，其中至少某些互连穿过其上制作了存储器电路的衬底。
15.权利要求14的方法，还包含下列步骤：
对其上制作了存储器电路的衬底进行减薄，以形成减薄了的衬底，从而方便所述互连的制作。
16.权利要求15的方法，其中至少某些所述互连是具有小于100μm的间距的细粒垂直互连。
17.权利要求15的方法，其中所述减薄了的衬底被减薄到厚度小于50μm。
18.权利要求15的方法，其中减薄了的衬底的半导体部分被减薄到厚度在大约1-8μm的范围内。
19.权利要求15的方法，其中所述减薄包含研磨所述衬底。
20.权利要求19的方法，其中所述衬底在被键合之后被研磨。
21.权利要求19的方法，其中所述衬底在被键合之前被研磨。
22.权利要求14的方法，其中至少一个存储器电路制作在可重新使用的衬底上，进一步包含从可重新使用的衬底将其中制作了存储器电路的层分离的步骤。
23.权利要求22的方法，其中至少一个存储器电路由多晶硅晶体管制作。
24.权利要求14的方法，其中的键合包含热扩散键合。
25.权利要求24的方法，其中的配套接触图形制作在待要键合到一起的各个表面上。
26.权利要求25的方法，其中所述配套接触图形主要由金属制作。
27.权利要求26的方法，其中所述金属选自Al、Sn、Ti、In、Pb、Zn、Ni、Cu、Pt和Au的金属和它们的合金构成的组。
28.权利要求14的方法，其中所述存储器电路和所述存储器控制器电路是半导体电路，且其中的存储器控制器电路用第一半导体工艺技术制造，而存储器电路用不同的第二半导体工艺技术制造。
29.权利要求28的方法，其中的第一半导体工艺技术采用第一类型和第二互补类型的有源半导体器件。
30.权利要求28的方法，其中根据第二半导体工艺技术制作的半导体器件包括MOS半导体器件，各个MOS半导体器件都是单一类型的。
31.一种将其上各制作有集成电路的多个衬底键合到一起以便在各集成电路之间形成互连的方法，此方法包含下列步骤：
对各个第一和第二衬底上的配套表面进行加工，以便达到各个配套表面的基本平整性；
在配套表面上制作配套的细粒互连图形；以及
执行配套表面的细粒平坦热扩散键合；以及
对其上制作了所述集成电路的至少一个所述衬底进行减薄以形成减薄了的衬底，从而方便所述互连的制作，并执行所述减薄了的衬底的背侧加工。
32.权利要求31的方法，其中所述第一衬底到第二衬底的热扩散键合形成一个叠层IC结构。
33.权利要求32的方法，其中至少某些所述互连是间距小于100μm的细粒垂直互连。
34.权利要求33的方法，包含进一步键合叠层IC结构和另一个衬底的步骤。
35.权利要求34的方法，其中所述进一步键合是叠层IC结构和另一个衬底的彼此热扩散键合。
36.权利要求35的方法，其中所述热扩散键合采用具有小于100μm的接触间距的细粒接触图形。
37.权利要求36的方法，其中所述细粒接触图形形成细粒垂直互连的延伸范围。
38.权利要求31的方法，包含进一步键合叠层IC结构和另一个衬底的步骤。
39.权利要求38的方法，其中所述进一步键合是单个叠层IC结构和另一个衬底的金属丝键合。
40.权利要求31的方法，其中至少某些互连用平面工艺制作。
41.权利要求38的方法，其中所述进一步键合是单个叠层IC结构的细粒垂直互连接触图形和另一个叠层IC或常规电路IC的热扩散金属键合。
42.权利要求38的方法，其中所述进一步键合是单个叠层IC结构的互连接触图形和另一个叠层IC或常规IC的热扩散金属键合。
43.权利要求41的方法，其中第一和第二衬底被金属丝键合到第三衬底。
44.权利要求31的方法，还包含下列步骤：
对其上制作了所述集成电路的所述衬底进行减薄以形成减薄了的衬底，从而方便所述互连的制作。
45.权利要求44的方法，其中至少某些所述互连是间距小于100μm的细粒垂直互连。
46.权利要求44的方法，其中所述减薄了的衬底被减薄到厚度小于50μm。
47.权利要求44的方法，其中减薄了的衬底的半导体部分被减薄到厚度在大约1-8μm的范围内。
48.权利要求44的方法，其中所述减薄包含研磨所述衬底。
49.权利要求48的方法，其中所述衬底在被键合之后被研磨。
50.权利要求48的方法，其中所述衬底在被键合之前被研磨。
51.权利要求43的方法，其中至少一个集成电路制作在可重新使用的衬底上，进一步包含从可重新使用的衬底将其中制作了集成电路的层分离的步骤。
52.权利要求51的方法，其中至少一个集成电路由多晶硅晶体管制作。
53.权利要求43的方法，其中的键合包含热扩散键合。
54.权利要求53的方法，其中的配套接触图形制作在待要键合到一起的各个表面上。
55.权利要求54的方法，其中所述配套接触图形主要由金属制作。
56.权利要求55的方法，其中所述金属选自Al、Sn、Ti、In、Pb、Zn、Ni、Cu、Pt和Au的金属和它们的合金构成的组。
57.权利要求1的方法，还包含在存储器控制器读出放大器中定位，并将读出放大器耦合到存储器电路的数据线的步骤。
58.权利要求57的方法，还包含利用读出放大器识别二个以上的信号电平，并从各个读出放大器产生多层输出信号的步骤。
59.权利要求1的方法，其中所述存储器控制器电路用半导体工艺技术制造，而所述存储器电路用不同的工艺技术制造。
60.权利要求59的方法，其中所述不同的工艺技术选自DRAM、SRAM、FLASH、EPROM、与EEPROM、铁电存储器和巨磁阻构成的组。
61.权利要求1的方法，其中被热扩散键合所键合的表面包括互连金属化和非互连金属化；从而热扩散键合同时获得了通过所述互连金属化的电互连以及通过所述非互连金属化的机械键合。
62.权利要求31的方法，其中被热扩散键合所键合的表面包括互连金属化和非互连金属化；从而热扩散键合同时获得了通过所述互连金属化的电互连以及通过所述非互连金属化的机械键合。
CNB988038366A 1997-04-04 1998-04-03 三维结构存储器的制造方法 Expired - Fee Related CN1155050C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/835,190 1997-04-04
US08/835,190 US5915167A (en) 1997-04-04 1997-04-04 Three dimensional structure memory

Related Child Applications (4)

Application Number Title Priority Date Filing Date
CN2007101808311A Division CN101188235B (zh) 1997-04-04 1998-04-03 叠层集成电路存储器
CN2003101026369A Division CN1525485B (zh) 1997-04-04 1998-04-03 叠层集成电路存储器
CNB2003101043970A Division CN100409425C (zh) 1997-04-04 1998-04-03 三维结构存储器的制造方法及使用方法
CN201010284280.5A Division CN102005453B (zh) 1997-04-04 1998-04-03 三维结构存储器

Publications (2)

Publication Number Publication Date
CN1268925A CN1268925A (zh) 2000-10-04
CN1155050C true CN1155050C (zh) 2004-06-23

Family

ID=25268870

Family Applications (5)

Application Number Title Priority Date Filing Date
CN2007101808311A Expired - Fee Related CN101188235B (zh) 1997-04-04 1998-04-03 叠层集成电路存储器
CN201010284280.5A Expired - Fee Related CN102005453B (zh) 1997-04-04 1998-04-03 三维结构存储器
CNB988038366A Expired - Fee Related CN1155050C (zh) 1997-04-04 1998-04-03 三维结构存储器的制造方法
CNB2003101043970A Expired - Fee Related CN100409425C (zh) 1997-04-04 1998-04-03 三维结构存储器的制造方法及使用方法
CN2003101026369A Expired - Fee Related CN1525485B (zh) 1997-04-04 1998-04-03 叠层集成电路存储器

Family Applications Before (2)

Application Number Title Priority Date Filing Date
CN2007101808311A Expired - Fee Related CN101188235B (zh) 1997-04-04 1998-04-03 叠层集成电路存储器
CN201010284280.5A Expired - Fee Related CN102005453B (zh) 1997-04-04 1998-04-03 三维结构存储器

Family Applications After (2)

Application Number Title Priority Date Filing Date
CNB2003101043970A Expired - Fee Related CN100409425C (zh) 1997-04-04 1998-04-03 三维结构存储器的制造方法及使用方法
CN2003101026369A Expired - Fee Related CN1525485B (zh) 1997-04-04 1998-04-03 叠层集成电路存储器

Country Status (7)

Country Link
US (6) US5915167A (zh)
EP (3) EP2276035A3 (zh)
JP (6) JP2002516033A (zh)
KR (3) KR100785821B1 (zh)
CN (5) CN101188235B (zh)
TW (1) TW412854B (zh)
WO (1) WO1998045130A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9748114B2 (en) 2010-09-30 2017-08-29 International Business Machines Corporation Method for forming through silicon via in N+ epitaxy wafers with reduced parasitic capacitance

Families Citing this family (1273)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5354695A (en) * 1992-04-08 1994-10-11 Leedy Glenn J Membrane dielectric isolation IC fabrication
US6714625B1 (en) * 1992-04-08 2004-03-30 Elm Technology Corporation Lithography device for semiconductor circuit pattern generation
US8058142B2 (en) 1996-11-04 2011-11-15 Besang Inc. Bonded semiconductor structure and method of making the same
US7800199B2 (en) * 2003-06-24 2010-09-21 Oh Choonsik Semiconductor circuit
US8018058B2 (en) * 2004-06-21 2011-09-13 Besang Inc. Semiconductor memory device
US7633162B2 (en) * 2004-06-21 2009-12-15 Sang-Yun Lee Electronic circuit with embedded memory
US20050280155A1 (en) * 2004-06-21 2005-12-22 Sang-Yun Lee Semiconductor bonding and layer transfer method
US5915167A (en) * 1997-04-04 1999-06-22 Elm Technology Corporation Three dimensional structure memory
US6551857B2 (en) 1997-04-04 2003-04-22 Elm Technology Corporation Three dimensional structure integrated circuits
FR2771852B1 (fr) * 1997-12-02 1999-12-31 Commissariat Energie Atomique Procede de transfert selectif d'une microstructure, formee sur un substrat initial, vers un substrat final
JPH11204742A (ja) * 1998-01-20 1999-07-30 Sony Corp メモリ及び情報機器
US6198168B1 (en) 1998-01-20 2001-03-06 Micron Technologies, Inc. Integrated circuits using high aspect ratio vias through a semiconductor wafer and method for forming same
US6150188A (en) * 1998-02-26 2000-11-21 Micron Technology Inc. Integrated circuits using optical fiber interconnects formed through a semiconductor wafer and methods for forming same
US6090636A (en) * 1998-02-26 2000-07-18 Micron Technology, Inc. Integrated circuits using optical waveguide interconnects formed through a semiconductor wafer and methods for forming same
US6329712B1 (en) * 1998-03-25 2001-12-11 Micron Technology, Inc. High density flip chip memory arrays
US6586835B1 (en) 1998-08-31 2003-07-01 Micron Technology, Inc. Compact system module with built-in thermoelectric cooling
US6392296B1 (en) 1998-08-31 2002-05-21 Micron Technology, Inc. Silicon interposer with optical connections
US6219237B1 (en) 1998-08-31 2001-04-17 Micron Technology, Inc. Structure and method for an electronic assembly
US6281042B1 (en) 1998-08-31 2001-08-28 Micron Technology, Inc. Structure and method for a high performance electronic packaging assembly
US7157314B2 (en) 1998-11-16 2007-01-02 Sandisk Corporation Vertically stacked field programmable nonvolatile memory and method of fabrication
US6122187A (en) 1998-11-23 2000-09-19 Micron Technology, Inc. Stacked integrated circuits
US6255852B1 (en) 1999-02-09 2001-07-03 Micron Technology, Inc. Current mode signal interconnects and CMOS amplifier
CN1183545C (zh) * 1999-02-26 2005-01-05 因芬尼昂技术股份公司 存储元件装置及其制造方法
US6849480B1 (en) 1999-05-07 2005-02-01 Seagate Technology Llc Surface mount IC stacking method and device
US6903434B2 (en) 1999-05-20 2005-06-07 Alliance Semiconductors Method and apparatus for integrating flash EPROM and SRAM cells on a common substrate
DE19928733A1 (de) * 1999-06-23 2001-01-04 Giesecke & Devrient Gmbh Halbleiterspeicher-Chipmodul
US7554829B2 (en) 1999-07-30 2009-06-30 Micron Technology, Inc. Transmission lines for CMOS integrated circuits
US6984571B1 (en) 1999-10-01 2006-01-10 Ziptronix, Inc. Three dimensional device integration method and integrated device
US6500694B1 (en) * 2000-03-22 2002-12-31 Ziptronix, Inc. Three dimensional device integration method and integrated device
US6259126B1 (en) * 1999-11-23 2001-07-10 International Business Machines Corporation Low cost mixed memory integration with FERAM
US6197663B1 (en) 1999-12-07 2001-03-06 Lucent Technologies Inc. Process for fabricating integrated circuit devices having thin film transistors
TW587252B (en) 2000-01-18 2004-05-11 Hitachi Ltd Semiconductor memory device and data processing device
KR100440548B1 (ko) * 2000-01-20 2004-07-15 마쯔시다덴기산교 가부시키가이샤 자기 저항 헤드 및 그 제조방법, 및 자기 기록 재생장치
US6902987B1 (en) 2000-02-16 2005-06-07 Ziptronix, Inc. Method for low temperature bonding and bonded structure
US6888750B2 (en) * 2000-04-28 2005-05-03 Matrix Semiconductor, Inc. Nonvolatile memory on SOI and compound semiconductor substrates and method of fabrication
US8575719B2 (en) 2000-04-28 2013-11-05 Sandisk 3D Llc Silicon nitride antifuse for use in diode-antifuse memory arrays
US6956757B2 (en) * 2000-06-22 2005-10-18 Contour Semiconductor, Inc. Low cost high density rectifier matrix memory
US6563133B1 (en) 2000-08-09 2003-05-13 Ziptronix, Inc. Method of epitaxial-like wafer bonding at low temperature and bonded structure
US6711043B2 (en) 2000-08-14 2004-03-23 Matrix Semiconductor, Inc. Three-dimensional memory cache system
US6765813B2 (en) 2000-08-14 2004-07-20 Matrix Semiconductor, Inc. Integrated systems using vertically-stacked three-dimensional memory cells
EP1312120A1 (en) 2000-08-14 2003-05-21 Matrix Semiconductor, Inc. Dense arrays and charge storage devices, and methods for making same
US6600173B2 (en) 2000-08-30 2003-07-29 Cornell Research Foundation, Inc. Low temperature semiconductor layering and three-dimensional electronic circuits using the layering
US20030120858A1 (en) 2000-09-15 2003-06-26 Matrix Semiconductor, Inc. Memory devices and methods for use therewith
US6584541B2 (en) 2000-09-15 2003-06-24 Matrix Semiconductor, Inc. Method for storing digital information in write-once memory array
JP2002176137A (ja) 2000-09-28 2002-06-21 Toshiba Corp 積層型半導体デバイス
JP3934867B2 (ja) 2000-09-29 2007-06-20 株式会社東芝 不揮発性半導体記憶装置および不揮発性半導体メモリシステム
US6498088B1 (en) * 2000-11-09 2002-12-24 Micron Technology, Inc. Stacked local interconnect structure and method of fabricating same
US6377504B1 (en) * 2000-12-12 2002-04-23 Tachuon Semiconductor Corp High-density memory utilizing multiplexers to reduce bit line pitch constraints
US6591394B2 (en) * 2000-12-22 2003-07-08 Matrix Semiconductor, Inc. Three-dimensional memory array and method for storing data bits and ECC bits therein
US7352199B2 (en) 2001-02-20 2008-04-01 Sandisk Corporation Memory card with enhanced testability and methods of making and using the same
US6521994B1 (en) 2001-03-22 2003-02-18 Netlogic Microsystems, Inc. Multi-chip module having content addressable memory
US6718432B1 (en) 2001-03-22 2004-04-06 Netlogic Microsystems, Inc. Method and apparatus for transparent cascading of multiple content addressable memory devices
US6897514B2 (en) * 2001-03-28 2005-05-24 Matrix Semiconductor, Inc. Two mask floating gate EEPROM and method of making
US7424201B2 (en) * 2001-03-30 2008-09-09 Sandisk 3D Llc Method for field-programming a solid-state memory device with a digital media file
US6748994B2 (en) * 2001-04-11 2004-06-15 Avery Dennison Corporation Label applicator, method and label therefor
JP4208191B2 (ja) * 2001-07-11 2009-01-14 独立行政法人理化学研究所 形状と物理量を統合したボリュームデータの生成方法及び生成装置と生成プログラム
US6762092B2 (en) * 2001-08-08 2004-07-13 Sandisk Corporation Scalable self-aligned dual floating gate memory cell array and methods of forming the array
US6593624B2 (en) 2001-09-25 2003-07-15 Matrix Semiconductor, Inc. Thin film transistors with vertically offset drain regions
US6841813B2 (en) * 2001-08-13 2005-01-11 Matrix Semiconductor, Inc. TFT mask ROM and method for making same
US6843421B2 (en) 2001-08-13 2005-01-18 Matrix Semiconductor, Inc. Molded memory module and method of making the module absent a substrate support
US6525953B1 (en) 2001-08-13 2003-02-25 Matrix Semiconductor, Inc. Vertically-stacked, field-programmable, nonvolatile memory and method of fabrication
WO2003016031A1 (en) * 2001-08-16 2003-02-27 Riken Rapid prototyping method and device using v-cad data
GB0120113D0 (en) 2001-08-17 2001-10-10 Koninkl Philips Electronics Nv Memory circuit
US6759275B1 (en) 2001-09-04 2004-07-06 Megic Corporation Method for making high-performance RF integrated circuits
US6624485B2 (en) 2001-11-05 2003-09-23 Matrix Semiconductor, Inc. Three-dimensional, mask-programmed read only memory
US7101770B2 (en) 2002-01-30 2006-09-05 Micron Technology, Inc. Capacitive techniques to reduce noise in high speed interconnections
US6649505B2 (en) 2002-02-04 2003-11-18 Matrix Semiconductor, Inc. Method for fabricating and identifying integrated circuits and self-identifying integrated circuits
US6731011B2 (en) * 2002-02-19 2004-05-04 Matrix Semiconductor, Inc. Memory module having interconnected and stacked integrated circuits
US7235457B2 (en) 2002-03-13 2007-06-26 Micron Technology, Inc. High permeability layered films to reduce noise in high speed interconnects
US6853049B2 (en) * 2002-03-13 2005-02-08 Matrix Semiconductor, Inc. Silicide-silicon oxide-semiconductor antifuse device and method of making
US6639309B2 (en) * 2002-03-28 2003-10-28 Sandisk Corporation Memory package with a controller on one side of a printed circuit board and memory on another side of the circuit board
US6906361B2 (en) * 2002-04-08 2005-06-14 Guobiao Zhang Peripheral circuits of electrically programmable three-dimensional memory
EP1514309B1 (en) * 2002-06-19 2013-11-27 SanDisk Technologies Inc. Deep wordline trench to shield cross coupling between adjacent cells of nand memory
US6894930B2 (en) 2002-06-19 2005-05-17 Sandisk Corporation Deep wordline trench to shield cross coupling between adjacent cells for scaled NAND
US6737675B2 (en) 2002-06-27 2004-05-18 Matrix Semiconductor, Inc. High density 3D rail stack arrays
US6768661B2 (en) * 2002-06-27 2004-07-27 Matrix Semiconductor, Inc. Multiple-mode memory and method for forming same
US7402897B2 (en) * 2002-08-08 2008-07-22 Elm Technology Corporation Vertical system integration
US6908817B2 (en) * 2002-10-09 2005-06-21 Sandisk Corporation Flash memory array with increased coupling between floating and control gates
US7183120B2 (en) * 2002-10-31 2007-02-27 Honeywell International Inc. Etch-stop material for improved manufacture of magnetic devices
US6954394B2 (en) * 2002-11-27 2005-10-11 Matrix Semiconductor, Inc. Integrated circuit and method for selecting a set of memory-cell-layer-dependent or temperature-dependent operating conditions
US7800932B2 (en) * 2005-09-28 2010-09-21 Sandisk 3D Llc Memory cell comprising switchable semiconductor memory element with trimmable resistance
US7767499B2 (en) * 2002-12-19 2010-08-03 Sandisk 3D Llc Method to form upward pointing p-i-n diodes having large and uniform current
US20070164388A1 (en) * 2002-12-19 2007-07-19 Sandisk 3D Llc Memory cell comprising a diode fabricated in a low resistivity, programmed state
US20060249753A1 (en) * 2005-05-09 2006-11-09 Matrix Semiconductor, Inc. High-density nonvolatile memory array fabricated at low temperature comprising semiconductor diodes
US20050226067A1 (en) 2002-12-19 2005-10-13 Matrix Semiconductor, Inc. Nonvolatile memory cell operating by increasing order in polycrystalline semiconductor material
US7660181B2 (en) * 2002-12-19 2010-02-09 Sandisk 3D Llc Method of making non-volatile memory cell with embedded antifuse
US7176064B2 (en) * 2003-12-03 2007-02-13 Sandisk 3D Llc Memory cell comprising a semiconductor junction diode crystallized adjacent to a silicide
JP2006511965A (ja) 2002-12-19 2006-04-06 マトリックス セミコンダクター インコーポレイテッド 高密度不揮発性メモリを製作するための改良された方法
US8008700B2 (en) * 2002-12-19 2011-08-30 Sandisk 3D Llc Non-volatile memory cell with embedded antifuse
US8637366B2 (en) * 2002-12-19 2014-01-28 Sandisk 3D Llc Nonvolatile memory cell without a dielectric antifuse having high- and low-impedance states
US7618850B2 (en) * 2002-12-19 2009-11-17 Sandisk 3D Llc Method of making a diode read/write memory cell in a programmed state
US7800933B2 (en) * 2005-09-28 2010-09-21 Sandisk 3D Llc Method for using a memory cell comprising switchable semiconductor memory element with trimmable resistance
US7285464B2 (en) 2002-12-19 2007-10-23 Sandisk 3D Llc Nonvolatile memory cell comprising a reduced height vertical diode
US7799675B2 (en) * 2003-06-24 2010-09-21 Sang-Yun Lee Bonded semiconductor structure and method of fabricating the same
US20100133695A1 (en) * 2003-01-12 2010-06-03 Sang-Yun Lee Electronic circuit with embedded memory
US6806535B2 (en) * 2003-01-22 2004-10-19 Macronix International Co., Ltd. Non-volatile memory and fabricating method thereof
US6962835B2 (en) 2003-02-07 2005-11-08 Ziptronix, Inc. Method for room temperature metal direct bonding
US7383476B2 (en) * 2003-02-11 2008-06-03 Sandisk 3D Llc System architecture and method for three-dimensional memory
US7293286B2 (en) * 2003-02-20 2007-11-06 Bea Systems, Inc. Federated management of content repositories
JP4419049B2 (ja) * 2003-04-21 2010-02-24 エルピーダメモリ株式会社 メモリモジュール及びメモリシステム
US7511352B2 (en) * 2003-05-19 2009-03-31 Sandisk 3D Llc Rail Schottky device and method of making
US7109092B2 (en) 2003-05-19 2006-09-19 Ziptronix, Inc. Method of room temperature covalent bonding
US7105406B2 (en) * 2003-06-20 2006-09-12 Sandisk Corporation Self aligned non-volatile memory cell and process for fabrication
US7867822B2 (en) 2003-06-24 2011-01-11 Sang-Yun Lee Semiconductor memory device
US7632738B2 (en) * 2003-06-24 2009-12-15 Sang-Yun Lee Wafer bonding method
US20100190334A1 (en) * 2003-06-24 2010-07-29 Sang-Yun Lee Three-dimensional semiconductor structure and method of manufacturing the same
US8471263B2 (en) * 2003-06-24 2013-06-25 Sang-Yun Lee Information storage system which includes a bonded semiconductor structure
US7863748B2 (en) * 2003-06-24 2011-01-04 Oh Choonsik Semiconductor circuit and method of fabricating the same
US8071438B2 (en) * 2003-06-24 2011-12-06 Besang Inc. Semiconductor circuit
US7057958B2 (en) * 2003-09-30 2006-06-06 Sandisk Corporation Method and system for temperature compensation for memory cells with temperature-dependent behavior
US20050073875A1 (en) * 2003-10-03 2005-04-07 Matsushita Electric Industrial Co., Ltd. Redundancy repaired yield calculation method
US7221008B2 (en) * 2003-10-06 2007-05-22 Sandisk Corporation Bitline direction shielding to avoid cross coupling between adjacent cells for NAND flash memory
US8018024B2 (en) * 2003-12-03 2011-09-13 Sandisk 3D Llc P-i-n diode crystallized adjacent to a silicide in series with a dielectric antifuse
US7682920B2 (en) * 2003-12-03 2010-03-23 Sandisk 3D Llc Method for making a p-i-n diode crystallized adjacent to a silicide in series with a dielectric antifuse
US7423304B2 (en) 2003-12-05 2008-09-09 Sandisck 3D Llc Optimization of critical dimensions and pitch of patterned features in and above a substrate
US6951780B1 (en) * 2003-12-18 2005-10-04 Matrix Semiconductor, Inc. Selective oxidation of silicon in diode, TFT, and monolithic three dimensional memory arrays
FR2864336B1 (fr) * 2003-12-23 2006-04-28 Commissariat Energie Atomique Procede de scellement de deux plaques avec formation d'un contact ohmique entre celles-ci
JP3896112B2 (ja) * 2003-12-25 2007-03-22 エルピーダメモリ株式会社 半導体集積回路装置
JP4850392B2 (ja) * 2004-02-17 2012-01-11 三洋電機株式会社 半導体装置の製造方法
US7183153B2 (en) * 2004-03-12 2007-02-27 Sandisk Corporation Method of manufacturing self aligned non-volatile memory cells
US7507638B2 (en) * 2004-06-30 2009-03-24 Freescale Semiconductor, Inc. Ultra-thin die and method of fabricating same
FR2872625B1 (fr) * 2004-06-30 2006-09-22 Commissariat Energie Atomique Assemblage par adhesion moleculaire de deux substrats, l'un au moins supportant un film conducteur electrique
US7315466B2 (en) 2004-08-04 2008-01-01 Samsung Electronics Co., Ltd. Semiconductor memory device and method for arranging and manufacturing the same
US7312487B2 (en) * 2004-08-16 2007-12-25 International Business Machines Corporation Three dimensional integrated circuit
US7566974B2 (en) * 2004-09-29 2009-07-28 Sandisk 3D, Llc Doped polysilicon via connecting polysilicon layers
JP4966487B2 (ja) * 2004-09-29 2012-07-04 オンセミコンダクター・トレーディング・リミテッド 半導体装置及びその製造方法
US20060067117A1 (en) * 2004-09-29 2006-03-30 Matrix Semiconductor, Inc. Fuse memory cell comprising a diode, the diode serving as the fuse element
US7405465B2 (en) 2004-09-29 2008-07-29 Sandisk 3D Llc Deposited semiconductor structure to minimize n-type dopant diffusion and method of making
JP4443379B2 (ja) * 2004-10-26 2010-03-31 三洋電機株式会社 半導体装置の製造方法
JP4873517B2 (ja) * 2004-10-28 2012-02-08 オンセミコンダクター・トレーディング・リミテッド 半導体装置及びその製造方法
US7416956B2 (en) * 2004-11-23 2008-08-26 Sandisk Corporation Self-aligned trench filling for narrow gap isolation regions
US7381615B2 (en) 2004-11-23 2008-06-03 Sandisk Corporation Methods for self-aligned trench filling with grown dielectric for high coupling ratio in semiconductor devices
US7218570B2 (en) * 2004-12-17 2007-05-15 Sandisk 3D Llc Apparatus and method for memory operations using address-dependent conditions
US7482223B2 (en) * 2004-12-22 2009-01-27 Sandisk Corporation Multi-thickness dielectric for semiconductor memory
US7307268B2 (en) 2005-01-19 2007-12-11 Sandisk Corporation Structure and method for biasing phase change memory array for reliable writing
US7259038B2 (en) * 2005-01-19 2007-08-21 Sandisk Corporation Forming nonvolatile phase change memory cell having a reduced thermal contact area
US7517796B2 (en) * 2005-02-17 2009-04-14 Sandisk 3D Llc Method for patterning submicron pillars
US7485967B2 (en) * 2005-03-10 2009-02-03 Sanyo Electric Co., Ltd. Semiconductor device with via hole for electric connection
US7303959B2 (en) * 2005-03-11 2007-12-04 Sandisk 3D Llc Bottom-gate SONOS-type cell having a silicide gate
US7422985B2 (en) * 2005-03-25 2008-09-09 Sandisk 3D Llc Method for reducing dielectric overetch using a dielectric etch stop at a planar surface
US7521353B2 (en) 2005-03-25 2009-04-21 Sandisk 3D Llc Method for reducing dielectric overetch when making contact to conductive features
US20110143506A1 (en) * 2009-12-10 2011-06-16 Sang-Yun Lee Method for fabricating a semiconductor memory device
US8455978B2 (en) 2010-05-27 2013-06-04 Sang-Yun Lee Semiconductor circuit structure and method of making the same
US8367524B2 (en) * 2005-03-29 2013-02-05 Sang-Yun Lee Three-dimensional integrated circuit structure
US7553611B2 (en) * 2005-03-31 2009-06-30 Sandisk 3D Llc Masking of repeated overlay and alignment marks to allow reuse of photomasks in a vertical structure
US7812404B2 (en) 2005-05-09 2010-10-12 Sandisk 3D Llc Nonvolatile memory cell comprising a diode and a resistance-switching material
US8110863B2 (en) 2005-06-01 2012-02-07 Sandisk 3D Llc TFT charge storage memory cell having high-mobility corrugated channel
US7317641B2 (en) * 2005-06-20 2008-01-08 Sandisk Corporation Volatile memory cell two-pass writing method
US7764549B2 (en) * 2005-06-20 2010-07-27 Sandisk 3D Llc Floating body memory cell system and method of manufacture
US20070014168A1 (en) * 2005-06-24 2007-01-18 Rajan Suresh N Method and circuit for configuring memory core integrated circuit dies with memory interface integrated circuit dies
US8438328B2 (en) 2008-02-21 2013-05-07 Google Inc. Emulation of abstracted DIMMs using abstracted DRAMs
US9542352B2 (en) 2006-02-09 2017-01-10 Google Inc. System and method for reducing command scheduling constraints of memory circuits
US8111566B1 (en) 2007-11-16 2012-02-07 Google, Inc. Optimal channel design for memory devices for providing a high-speed memory interface
US20080082763A1 (en) 2006-10-02 2008-04-03 Metaram, Inc. Apparatus and method for power management of memory circuits by a system or component thereof
US8359187B2 (en) 2005-06-24 2013-01-22 Google Inc. Simulating a different number of memory circuit devices
US8619452B2 (en) 2005-09-02 2013-12-31 Google Inc. Methods and apparatus of stacking DRAMs
US8089795B2 (en) 2006-02-09 2012-01-03 Google Inc. Memory module with memory stack and interface with enhanced capabilities
US9171585B2 (en) 2005-06-24 2015-10-27 Google Inc. Configurable memory circuit system and method
US20080028136A1 (en) 2006-07-31 2008-01-31 Schakel Keith R Method and apparatus for refresh management of memory modules
US7609567B2 (en) 2005-06-24 2009-10-27 Metaram, Inc. System and method for simulating an aspect of a memory circuit
US8055833B2 (en) 2006-10-05 2011-11-08 Google Inc. System and method for increasing capacity, performance, and flexibility of flash storage
US8081474B1 (en) 2007-12-18 2011-12-20 Google Inc. Embossed heat spreader
US8041881B2 (en) 2006-07-31 2011-10-18 Google Inc. Memory device with emulated characteristics
US10013371B2 (en) 2005-06-24 2018-07-03 Google Llc Configurable memory circuit system and method
US8335894B1 (en) 2008-07-25 2012-12-18 Google Inc. Configurable memory system with interface circuit
US9507739B2 (en) 2005-06-24 2016-11-29 Google Inc. Configurable memory circuit system and method
US8244971B2 (en) 2006-07-31 2012-08-14 Google Inc. Memory circuit system and method
US7386656B2 (en) 2006-07-31 2008-06-10 Metaram, Inc. Interface circuit system and method for performing power management operations in conjunction with only a portion of a memory circuit
US8386722B1 (en) 2008-06-23 2013-02-26 Google Inc. Stacked DIMM memory interface
US8130560B1 (en) 2006-11-13 2012-03-06 Google Inc. Multi-rank partial width memory modules
US8077535B2 (en) 2006-07-31 2011-12-13 Google Inc. Memory refresh apparatus and method
US8796830B1 (en) 2006-09-01 2014-08-05 Google Inc. Stackable low-profile lead frame package
US8090897B2 (en) * 2006-07-31 2012-01-03 Google Inc. System and method for simulating an aspect of a memory circuit
US8397013B1 (en) 2006-10-05 2013-03-12 Google Inc. Hybrid memory module
US8327104B2 (en) 2006-07-31 2012-12-04 Google Inc. Adjusting the timing of signals associated with a memory system
US8060774B2 (en) 2005-06-24 2011-11-15 Google Inc. Memory systems and memory modules
US7453755B2 (en) * 2005-07-01 2008-11-18 Sandisk 3D Llc Memory cell with high-K antifuse for reverse bias programming
US20070069241A1 (en) 2005-07-01 2007-03-29 Matrix Semiconductor, Inc. Memory with high dielectric constant antifuses and method for using at low voltage
US7345907B2 (en) 2005-07-11 2008-03-18 Sandisk 3D Llc Apparatus and method for reading an array of nonvolatile memory cells including switchable resistor memory elements
US7426128B2 (en) * 2005-07-11 2008-09-16 Sandisk 3D Llc Switchable resistive memory with opposite polarity write pulses
US7955515B2 (en) * 2005-07-11 2011-06-07 Sandisk 3D Llc Method of plasma etching transition metal oxides
US7362604B2 (en) * 2005-07-11 2008-04-22 Sandisk 3D Llc Apparatus and method for programming an array of nonvolatile memory cells including switchable resistor memory elements
US7978561B2 (en) 2005-07-28 2011-07-12 Samsung Electronics Co., Ltd. Semiconductor memory devices having vertically-stacked transistors therein
JP2009502962A (ja) * 2005-07-29 2009-01-29 ザ ジェネラル ホスピタル コーポレイション 皮膚損傷を軽減するための方法、及び組成物
US7827345B2 (en) * 2005-08-04 2010-11-02 Joel Henry Hinrichs Serially interfaced random access memory
US7485968B2 (en) 2005-08-11 2009-02-03 Ziptronix, Inc. 3D IC method and device
JP4783100B2 (ja) * 2005-09-12 2011-09-28 独立行政法人理化学研究所 境界データのセル内形状データへの変換方法とその変換プログラム
US7800934B2 (en) * 2005-09-28 2010-09-21 Sandisk 3D Llc Programming methods to increase window for reverse write 3D cell
US7541240B2 (en) * 2005-10-18 2009-06-02 Sandisk Corporation Integration process flow for flash devices with low gap fill aspect ratio
US7816659B2 (en) * 2005-11-23 2010-10-19 Sandisk 3D Llc Devices having reversible resistivity-switching metal oxide or nitride layer with added metal
US7834338B2 (en) * 2005-11-23 2010-11-16 Sandisk 3D Llc Memory cell comprising nickel-cobalt oxide switching element
US7352602B2 (en) * 2005-12-30 2008-04-01 Micron Technology, Inc. Configurable inputs and outputs for memory stacking system and method
US9632929B2 (en) 2006-02-09 2017-04-25 Google Inc. Translating an address associated with a command communicated between a system and memory circuits
US7808810B2 (en) * 2006-03-31 2010-10-05 Sandisk 3D Llc Multilevel nonvolatile memory cell comprising a resistivity-switching oxide or nitride and an antifuse
US7829875B2 (en) * 2006-03-31 2010-11-09 Sandisk 3D Llc Nonvolatile rewritable memory cell comprising a resistivity-switching oxide or nitride and an antifuse
US7875871B2 (en) * 2006-03-31 2011-01-25 Sandisk 3D Llc Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride
US7283414B1 (en) 2006-05-24 2007-10-16 Sandisk 3D Llc Method for improving the precision of a temperature-sensor circuit
US7575984B2 (en) 2006-05-31 2009-08-18 Sandisk 3D Llc Conductive hard mask to protect patterned features during trench etch
US7754605B2 (en) * 2006-06-30 2010-07-13 Sandisk 3D Llc Ultrashallow semiconductor contact by outdiffusion from a solid source
US20080012065A1 (en) * 2006-07-11 2008-01-17 Sandisk Corporation Bandgap engineered charge storage layer for 3D TFT
US7486537B2 (en) * 2006-07-31 2009-02-03 Sandisk 3D Llc Method for using a mixed-use memory array with different data states
US7542338B2 (en) * 2006-07-31 2009-06-02 Sandisk 3D Llc Method for reading a multi-level passive element memory cell array
US7450414B2 (en) * 2006-07-31 2008-11-11 Sandisk 3D Llc Method for using a mixed-use memory array
US20080023790A1 (en) * 2006-07-31 2008-01-31 Scheuerlein Roy E Mixed-use memory array
US8279704B2 (en) * 2006-07-31 2012-10-02 Sandisk 3D Llc Decoder circuitry providing forward and reverse modes of memory array operation and method for biasing same
US7724589B2 (en) 2006-07-31 2010-05-25 Google Inc. System and method for delaying a signal communicated from a system to at least one of a plurality of memory circuits
US7542337B2 (en) * 2006-07-31 2009-06-02 Sandisk 3D Llc Apparatus for reading a multi-level passive element memory cell array
US8513789B2 (en) 2006-10-10 2013-08-20 Tessera, Inc. Edge connect wafer level stacking with leads extending along edges
US7829438B2 (en) * 2006-10-10 2010-11-09 Tessera, Inc. Edge connect wafer level stacking
US7901989B2 (en) * 2006-10-10 2011-03-08 Tessera, Inc. Reconstituted wafer level stacking
JP4245180B2 (ja) * 2006-10-30 2009-03-25 エルピーダメモリ株式会社 積層メモリ
US7952901B2 (en) * 2007-08-09 2011-05-31 Qualcomm Incorporated Content addressable memory
MX2009005241A (es) * 2006-11-17 2009-05-28 Qualcomm Inc Memoria de contenido direccionable.
US7811916B2 (en) * 2006-12-13 2010-10-12 Sandisk 3D Llc Method for isotropic doping of a non-planar surface exposed in a void
US20080160680A1 (en) * 2006-12-28 2008-07-03 Yuan Jack H Methods of fabricating shield plates for reduced field coupling in nonvolatile memory
US20080157169A1 (en) * 2006-12-28 2008-07-03 Yuan Jack H Shield plates for reduced field coupling in nonvolatile memory
US7952195B2 (en) * 2006-12-28 2011-05-31 Tessera, Inc. Stacked packages with bridging traces
US7890723B2 (en) * 2006-12-29 2011-02-15 Sandisk Corporation Method for code execution
US7890724B2 (en) * 2006-12-29 2011-02-15 Sandisk Corporation System for code execution
US7605458B1 (en) * 2007-02-01 2009-10-20 Xilinx, Inc. Method and apparatus for integrating capacitors in stacked integrated circuits
KR20080080882A (ko) * 2007-03-02 2008-09-05 삼성전자주식회사 Ｅｃｃ용 레이어를 구비하는 다층 구조 반도체 메모리 장치및 이를 이용하는 에러 검출 및 정정 방법
EP2130219B1 (en) 2007-03-27 2016-10-12 SanDisk Technologies, Inc. Three dimensional nand memory and method of making thereof
US7982209B2 (en) * 2007-03-27 2011-07-19 Sandisk 3D Llc Memory cell comprising a carbon nanotube fabric element and a steering element
US7745265B2 (en) * 2007-03-27 2010-06-29 Sandisk 3D, Llc Method of making three dimensional NAND memory
US7667999B2 (en) * 2007-03-27 2010-02-23 Sandisk 3D Llc Method to program a memory cell comprising a carbon nanotube fabric and a steering element
US7851851B2 (en) * 2007-03-27 2010-12-14 Sandisk 3D Llc Three dimensional NAND memory
US7808038B2 (en) * 2007-03-27 2010-10-05 Sandisk 3D Llc Method of making three dimensional NAND memory
US7586773B2 (en) 2007-03-27 2009-09-08 Sandisk 3D Llc Large array of upward pointing p-i-n diodes having large and uniform current
US7575973B2 (en) * 2007-03-27 2009-08-18 Sandisk 3D Llc Method of making three dimensional NAND memory
US7514321B2 (en) * 2007-03-27 2009-04-07 Sandisk 3D Llc Method of making three dimensional NAND memory
US7745285B2 (en) 2007-03-30 2010-06-29 Sandisk Corporation Methods of forming and operating NAND memory with side-tunneling
US20080315206A1 (en) * 2007-06-19 2008-12-25 Herner S Brad Highly Scalable Thin Film Transistor
US7537968B2 (en) 2007-06-19 2009-05-26 Sandisk 3D Llc Junction diode with reduced reverse current
US8072791B2 (en) * 2007-06-25 2011-12-06 Sandisk 3D Llc Method of making nonvolatile memory device containing carbon or nitrogen doped diode
US7684226B2 (en) * 2007-06-25 2010-03-23 Sandisk 3D Llc Method of making high forward current diodes for reverse write 3D cell
US8102694B2 (en) * 2007-06-25 2012-01-24 Sandisk 3D Llc Nonvolatile memory device containing carbon or nitrogen doped diode
US7830697B2 (en) * 2007-06-25 2010-11-09 Sandisk 3D Llc High forward current diodes for reverse write 3D cell
US7718546B2 (en) * 2007-06-27 2010-05-18 Sandisk 3D Llc Method for fabricating a 3-D integrated circuit using a hard mask of silicon-oxynitride on amorphous carbon
US20090003083A1 (en) * 2007-06-28 2009-01-01 Sandisk 3D Llc Memory cell with voltage modulated sidewall poly resistor
US8233308B2 (en) * 2007-06-29 2012-07-31 Sandisk 3D Llc Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same
US7824956B2 (en) 2007-06-29 2010-11-02 Sandisk 3D Llc Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
US7800939B2 (en) * 2007-06-29 2010-09-21 Sandisk 3D Llc Method of making 3D R/W cell with reduced reverse leakage
US7759666B2 (en) * 2007-06-29 2010-07-20 Sandisk 3D Llc 3D R/W cell with reduced reverse leakage
US7902537B2 (en) 2007-06-29 2011-03-08 Sandisk 3D Llc Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
CN101720506B (zh) 2007-06-29 2012-05-16 桑迪士克3D公司 存储器单元，存储器阵列以及形成它们的方法
US20090104756A1 (en) * 2007-06-29 2009-04-23 Tanmay Kumar Method to form a rewriteable memory cell comprising a diode and a resistivity-switching grown oxide
US7846785B2 (en) * 2007-06-29 2010-12-07 Sandisk 3D Llc Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same
US8209479B2 (en) 2007-07-18 2012-06-26 Google Inc. Memory circuit system and method
EP2186134A2 (en) 2007-07-27 2010-05-19 Tessera, Inc. Reconstituted wafer stack packaging with after-applied pad extensions
US8551815B2 (en) 2007-08-03 2013-10-08 Tessera, Inc. Stack packages using reconstituted wafers
US8043895B2 (en) * 2007-08-09 2011-10-25 Tessera, Inc. Method of fabricating stacked assembly including plurality of stacked microelectronic elements
EP2037461A3 (en) 2007-09-12 2009-10-28 Samsung Electronics Co., Ltd. Multi-layered memory devices
US8042082B2 (en) * 2007-09-12 2011-10-18 Neal Solomon Three dimensional memory in a system on a chip
US20090070550A1 (en) * 2007-09-12 2009-03-12 Solomon Research Llc Operational dynamics of three dimensional intelligent system on a chip
US8136071B2 (en) * 2007-09-12 2012-03-13 Neal Solomon Three dimensional integrated circuits and methods of fabrication
US8080874B1 (en) 2007-09-14 2011-12-20 Google Inc. Providing additional space between an integrated circuit and a circuit board for positioning a component therebetween
US20090086521A1 (en) * 2007-09-28 2009-04-02 Herner S Brad Multiple antifuse memory cells and methods to form, program, and sense the same
US20090087993A1 (en) * 2007-09-28 2009-04-02 Steven Maxwell Methods and apparatus for cost-effectively increasing feature density using a mask shrinking process with double patterning
US8298931B2 (en) * 2007-09-28 2012-10-30 Sandisk 3D Llc Dual damascene with amorphous carbon for 3D deep via/trench application
US7846782B2 (en) 2007-09-28 2010-12-07 Sandisk 3D Llc Diode array and method of making thereof
US8349663B2 (en) * 2007-09-28 2013-01-08 Sandisk 3D Llc Vertical diode based memory cells having a lowered programming voltage and methods of forming the same
US8059443B2 (en) * 2007-10-23 2011-11-15 Hewlett-Packard Development Company, L.P. Three-dimensional memory module architectures
US20090144678A1 (en) * 2007-11-30 2009-06-04 International Business Machines Corporation Method and on-chip control apparatus for enhancing process reliability and process variability through 3d integration
US8679861B2 (en) 2007-11-29 2014-03-25 International Business Machines Corporation Semiconductor chip repair by stacking of a base semiconductor chip and a repair semiconductor chip
US7759201B2 (en) * 2007-12-17 2010-07-20 Sandisk 3D Llc Method for fabricating pitch-doubling pillar structures
US7706169B2 (en) * 2007-12-27 2010-04-27 Sandisk 3D Llc Large capacity one-time programmable memory cell using metal oxides
US7887999B2 (en) * 2007-12-27 2011-02-15 Sandisk 3D Llc Method of making a pillar pattern using triple or quadruple exposure
US7746680B2 (en) 2007-12-27 2010-06-29 Sandisk 3D, Llc Three dimensional hexagonal matrix memory array
US7764534B2 (en) * 2007-12-28 2010-07-27 Sandisk 3D Llc Two terminal nonvolatile memory using gate controlled diode elements
US20090166610A1 (en) * 2007-12-31 2009-07-02 April Schricker Memory cell with planarized carbon nanotube layer and methods of forming the same
US8878235B2 (en) 2007-12-31 2014-11-04 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same
US8236623B2 (en) * 2007-12-31 2012-08-07 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same
US8558220B2 (en) * 2007-12-31 2013-10-15 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same
US7745312B2 (en) * 2008-01-15 2010-06-29 Sandisk 3D, Llc Selective germanium deposition for pillar devices
US7906392B2 (en) 2008-01-15 2011-03-15 Sandisk 3D Llc Pillar devices and methods of making thereof
JP2009200308A (ja) * 2008-02-22 2009-09-03 Oki Semiconductor Co Ltd 半導体パッケージ
GB2458907A (en) * 2008-04-01 2009-10-07 Sharp Kk Device interconnects
GB2459251A (en) * 2008-04-01 2009-10-21 Sharp Kk Semiconductor nanowire devices
US8530318B2 (en) * 2008-04-11 2013-09-10 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same
US7981592B2 (en) * 2008-04-11 2011-07-19 Sandisk 3D Llc Double patterning method
US8110476B2 (en) * 2008-04-11 2012-02-07 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods of forming the same
US7713818B2 (en) * 2008-04-11 2010-05-11 Sandisk 3D, Llc Double patterning method
US7812335B2 (en) * 2008-04-11 2010-10-12 Sandisk 3D Llc Sidewall structured switchable resistor cell
CN102067292B (zh) * 2008-04-11 2013-08-14 桑迪士克3D有限责任公司 用于蚀刻在非易失性存储器中使用的碳纳米管膜的方法
US8084366B2 (en) * 2008-04-11 2011-12-27 Sandisk 3D Llc Modified DARC stack for resist patterning
US8304284B2 (en) * 2008-04-11 2012-11-06 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element, and methods of forming the same
US8048474B2 (en) * 2008-04-11 2011-11-01 Sandisk 3D Llc Method of making nonvolatile memory cell containing carbon resistivity switching as a storage element by low temperature processing
US7859887B2 (en) * 2008-04-11 2010-12-28 Sandisk 3D Llc Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same
WO2009126846A1 (en) * 2008-04-11 2009-10-15 Sandisk 3D, Llc Damascene integration methods for graphitic films in three-dimensional memories and memories formed therefrom
US7830698B2 (en) * 2008-04-11 2010-11-09 Sandisk 3D Llc Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same
EP2263273B1 (en) * 2008-04-11 2012-05-16 Sandisk 3D LLC Memory cell that includes a carbon nano-tube reversible resistance-switching element and methods of forming the same
US7723180B2 (en) * 2008-04-11 2010-05-25 Sandisk 3D Llc Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same
US7786015B2 (en) * 2008-04-28 2010-08-31 Sandisk 3D Llc Method for fabricating self-aligned complementary pillar structures and wiring
US8450835B2 (en) * 2008-04-29 2013-05-28 Sandisk 3D Llc Reverse leakage reduction and vertical height shrinking of diode with halo doping
US7973555B1 (en) * 2008-05-28 2011-07-05 Xilinx, Inc. Configuration interface to stacked FPGA
US20090307415A1 (en) * 2008-06-05 2009-12-10 Yong-Hoon Kang Memory device having multi-layer structure and driving method thereof
EP2308087B1 (en) * 2008-06-16 2020-08-12 Tessera, Inc. Stacking of wafer-level chip scale packages having edge contacts
US7781269B2 (en) * 2008-06-30 2010-08-24 Sandisk 3D Llc Triangle two dimensional complementary patterning of pillars
US7732235B2 (en) 2008-06-30 2010-06-08 Sandisk 3D Llc Method for fabricating high density pillar structures by double patterning using positive photoresist
US7932180B2 (en) * 2008-07-07 2011-04-26 Infineon Technologies Ag Manufacturing a semiconductor device via etching a semiconductor chip to a first layer
CN102144309A (zh) * 2008-07-08 2011-08-03 桑迪士克3D有限责任公司 基于碳的电阻率-切换材料及其形成方法
US8569730B2 (en) * 2008-07-08 2013-10-29 Sandisk 3D Llc Carbon-based interface layer for a memory device and methods of forming the same
US8014185B2 (en) * 2008-07-09 2011-09-06 Sandisk 3D Llc Multiple series passive element matrix cell for three-dimensional arrays
US7733685B2 (en) * 2008-07-09 2010-06-08 Sandisk 3D Llc Cross point memory cell with distributed diodes and method of making same
US7579232B1 (en) 2008-07-11 2009-08-25 Sandisk 3D Llc Method of making a nonvolatile memory device including forming a pillar shaped semiconductor device and a shadow mask
US8309407B2 (en) * 2008-07-15 2012-11-13 Sandisk 3D Llc Electronic devices including carbon-based films having sidewall liners, and methods of forming such devices
US20100012914A1 (en) * 2008-07-18 2010-01-21 Sandisk 3D Llc Carbon-based resistivity-switching materials and methods of forming the same
US8031505B2 (en) * 2008-07-25 2011-10-04 Samsung Electronics Co., Ltd. Stacked memory module and system
US20100032639A1 (en) * 2008-08-07 2010-02-11 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods of forming the same
WO2010022097A1 (en) * 2008-08-19 2010-02-25 Sandisk 3D, Llc Methods for increasing carbon nano-tube (cnt) yield in memory devices
US8129256B2 (en) 2008-08-19 2012-03-06 International Business Machines Corporation 3D integrated circuit device fabrication with precisely controllable substrate removal
US8399336B2 (en) * 2008-08-19 2013-03-19 International Business Machines Corporation Method for fabricating a 3D integrated circuit device having lower-cost active circuitry layers stacked before higher-cost active circuitry layer
US8298914B2 (en) * 2008-08-19 2012-10-30 International Business Machines Corporation 3D integrated circuit device fabrication using interface wafer as permanent carrier
US8130528B2 (en) 2008-08-25 2012-03-06 Sandisk 3D Llc Memory system with sectional data lines
US8130527B2 (en) * 2008-09-11 2012-03-06 Micron Technology, Inc. Stacked device identification assignment
US8008213B2 (en) * 2008-09-30 2011-08-30 Sandisk 3D Llc Self-assembly process for memory array
US7920407B2 (en) * 2008-10-06 2011-04-05 Sandisk 3D, Llc Set and reset detection circuits for reversible resistance switching memory material
US8027209B2 (en) 2008-10-06 2011-09-27 Sandisk 3D, Llc Continuous programming of non-volatile memory
US8076056B2 (en) * 2008-10-06 2011-12-13 Sandisk 3D Llc Method of making sub-resolution pillar structures using undercutting technique
US7835207B2 (en) 2008-10-07 2010-11-16 Micron Technology, Inc. Stacked device remapping and repair
EP2340562A2 (en) * 2008-10-23 2011-07-06 Sandisk 3D LLC Carbon-based memory elements exhibiting reduced delamination and methods of forming the same
US7996736B2 (en) * 2008-10-26 2011-08-09 Sandisk 3D Llc Bad page marking strategy for fast readout in memory
US8080443B2 (en) * 2008-10-27 2011-12-20 Sandisk 3D Llc Method of making pillars using photoresist spacer mask
US8835892B2 (en) * 2008-10-30 2014-09-16 Sandisk 3D Llc Electronic devices including carbon nano-tube films having boron nitride-based liners, and methods of forming the same
US20100108976A1 (en) * 2008-10-30 2010-05-06 Sandisk 3D Llc Electronic devices including carbon-based films, and methods of forming such devices
US8421050B2 (en) * 2008-10-30 2013-04-16 Sandisk 3D Llc Electronic devices including carbon nano-tube films having carbon-based liners, and methods of forming the same
US7858468B2 (en) 2008-10-30 2010-12-28 Micron Technology, Inc. Memory devices and formation methods
US8193074B2 (en) * 2008-11-21 2012-06-05 Sandisk 3D Llc Integration of damascene type diodes and conductive wires for memory device
US8734759B2 (en) 2008-12-05 2014-05-27 Yeda Research And Development Co. Ltd. Methods of diagnosing and treating motor neuron diseases
US7978496B2 (en) 2008-12-18 2011-07-12 Sandisk 3D Llc Method of programming a nonvolatile memory device containing a carbon storage material
US7929368B2 (en) * 2008-12-30 2011-04-19 Micron Technology, Inc. Variable memory refresh devices and methods
US8084347B2 (en) 2008-12-31 2011-12-27 Sandisk 3D Llc Resist feature and removable spacer pitch doubling patterning method for pillar structures
US7846756B2 (en) * 2008-12-31 2010-12-07 Sandisk 3D Llc Nanoimprint enhanced resist spacer patterning method
WO2010078467A1 (en) 2008-12-31 2010-07-08 Sandisk 3D, Llc Modulation of resistivity in carbon-based read-writeable materials
US8114765B2 (en) * 2008-12-31 2012-02-14 Sandisk 3D Llc Methods for increased array feature density
US8023310B2 (en) * 2009-01-14 2011-09-20 Sandisk 3D Llc Nonvolatile memory cell including carbon storage element formed on a silicide layer
US8456880B2 (en) * 2009-01-30 2013-06-04 Unity Semiconductor Corporation Multiple layers of memory implemented as different memory technology
US8158515B2 (en) 2009-02-03 2012-04-17 International Business Machines Corporation Method of making 3D integrated circuits
US8683164B2 (en) * 2009-02-04 2014-03-25 Micron Technology, Inc. Stacked-die memory systems and methods for training stacked-die memory systems
WO2010104610A2 (en) * 2009-03-13 2010-09-16 Tessera Technologies Hungary Kft. Stacked microelectronic assemblies having vias extending through bond pads
US8183121B2 (en) 2009-03-31 2012-05-22 Sandisk 3D Llc Carbon-based films, and methods of forming the same, having dielectric filler material and exhibiting reduced thermal resistance
US7978498B2 (en) 2009-04-03 2011-07-12 Sandisk 3D, Llc Programming non-volatile storage element using current from other element
US8270199B2 (en) 2009-04-03 2012-09-18 Sandisk 3D Llc Cross point non-volatile memory cell
US8384426B2 (en) 2009-04-14 2013-02-26 Monolithic 3D Inc. Semiconductor device and structure
US7986042B2 (en) 2009-04-14 2011-07-26 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
US8754533B2 (en) 2009-04-14 2014-06-17 Monolithic 3D Inc. Monolithic three-dimensional semiconductor device and structure
US8669778B1 (en) 2009-04-14 2014-03-11 Monolithic 3D Inc. Method for design and manufacturing of a 3D semiconductor device
US8395191B2 (en) 2009-10-12 2013-03-12 Monolithic 3D Inc. Semiconductor device and structure
US9577642B2 (en) 2009-04-14 2017-02-21 Monolithic 3D Inc. Method to form a 3D semiconductor device
US8405420B2 (en) 2009-04-14 2013-03-26 Monolithic 3D Inc. System comprising a semiconductor device and structure
US9711407B2 (en) 2009-04-14 2017-07-18 Monolithic 3D Inc. Method of manufacturing a three dimensional integrated circuit by transfer of a mono-crystalline layer
US9509313B2 (en) 2009-04-14 2016-11-29 Monolithic 3D Inc. 3D semiconductor device
US8362800B2 (en) 2010-10-13 2013-01-29 Monolithic 3D Inc. 3D semiconductor device including field repairable logics
US8373439B2 (en) 2009-04-14 2013-02-12 Monolithic 3D Inc. 3D semiconductor device
US8378715B2 (en) 2009-04-14 2013-02-19 Monolithic 3D Inc. Method to construct systems
US8058137B1 (en) 2009-04-14 2011-11-15 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
US8362482B2 (en) 2009-04-14 2013-01-29 Monolithic 3D Inc. Semiconductor device and structure
US8427200B2 (en) 2009-04-14 2013-04-23 Monolithic 3D Inc. 3D semiconductor device
US8279650B2 (en) 2009-04-20 2012-10-02 Sandisk 3D Llc Memory system with data line switching scheme
US20100283053A1 (en) 2009-05-11 2010-11-11 Sandisk 3D Llc Nonvolatile memory array comprising silicon-based diodes fabricated at low temperature
US8988130B2 (en) * 2009-05-20 2015-03-24 Qualcomm Incorporated Method and apparatus for providing through silicon via (TSV) redundancy
WO2010144624A1 (en) 2009-06-09 2010-12-16 Google Inc. Programming of dimm termination resistance values
US8154904B2 (en) 2009-06-19 2012-04-10 Sandisk 3D Llc Programming reversible resistance switching elements
US7927977B2 (en) 2009-07-15 2011-04-19 Sandisk 3D Llc Method of making damascene diodes using sacrificial material
US8148230B2 (en) 2009-07-15 2012-04-03 Sandisk 3D Llc Method of making damascene diodes using selective etching methods
US8320181B2 (en) * 2009-08-25 2012-11-27 Micron Technology, Inc. 3D memory devices decoding and routing systems and methods
US8207064B2 (en) 2009-09-17 2012-06-26 Sandisk 3D Llc 3D polysilicon diode with low contact resistance and method for forming same
US8294159B2 (en) 2009-10-12 2012-10-23 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
US11018133B2 (en) 2009-10-12 2021-05-25 Monolithic 3D Inc. 3D integrated circuit
US10043781B2 (en) 2009-10-12 2018-08-07 Monolithic 3D Inc. 3D semiconductor device and structure
US10388863B2 (en) 2009-10-12 2019-08-20 Monolithic 3D Inc. 3D memory device and structure
US11374118B2 (en) 2009-10-12 2022-06-28 Monolithic 3D Inc. Method to form a 3D integrated circuit
US12027518B1 (en) 2009-10-12 2024-07-02 Monolithic 3D Inc. 3D semiconductor devices and structures with metal layers
US10910364B2 (en) 2009-10-12 2021-02-02 Monolitaic 3D Inc. 3D semiconductor device
US10366970B2 (en) 2009-10-12 2019-07-30 Monolithic 3D Inc. 3D semiconductor device and structure
US9099424B1 (en) 2012-08-10 2015-08-04 Monolithic 3D Inc. Semiconductor system, device and structure with heat removal
US8742476B1 (en) 2012-11-27 2014-06-03 Monolithic 3D Inc. Semiconductor device and structure
US8536023B2 (en) 2010-11-22 2013-09-17 Monolithic 3D Inc. Method of manufacturing a semiconductor device and structure
US8581349B1 (en) 2011-05-02 2013-11-12 Monolithic 3D Inc. 3D memory semiconductor device and structure
US10354995B2 (en) 2009-10-12 2019-07-16 Monolithic 3D Inc. Semiconductor memory device and structure
US8476145B2 (en) 2010-10-13 2013-07-02 Monolithic 3D Inc. Method of fabricating a semiconductor device and structure
US11984445B2 (en) 2009-10-12 2024-05-14 Monolithic 3D Inc. 3D semiconductor devices and structures with metal layers
US10157909B2 (en) 2009-10-12 2018-12-18 Monolithic 3D Inc. 3D semiconductor device and structure
US8450804B2 (en) 2011-03-06 2013-05-28 Monolithic 3D Inc. Semiconductor device and structure for heat removal
CA2777540C (en) 2009-10-14 2018-05-01 Skeletal Dynamics, Llc Internal joint stabilizer for a multi-axis joint, such as a carpo-metacarpal joint or the like, and method of use
US8274130B2 (en) 2009-10-20 2012-09-25 Sandisk 3D Llc Punch-through diode steering element
US8481396B2 (en) * 2009-10-23 2013-07-09 Sandisk 3D Llc Memory cell that includes a carbon-based reversible resistance switching element compatible with a steering element, and methods of forming the same
US8551855B2 (en) 2009-10-23 2013-10-08 Sandisk 3D Llc Memory cell that includes a carbon-based reversible resistance switching element compatible with a steering element, and methods of forming the same
US8233309B2 (en) * 2009-10-26 2012-07-31 Sandisk 3D Llc Non-volatile memory array architecture incorporating 1T-1R near 4F2 memory cell
US8809128B2 (en) * 2009-10-26 2014-08-19 Sandisk 3D Llc Methods and apparatus for layout of three dimensional matrix array memory for reduced cost patterning
US8558345B2 (en) 2009-11-09 2013-10-15 International Business Machines Corporation Integrated decoupling capacitor employing conductive through-substrate vias
US8237278B2 (en) 2009-11-16 2012-08-07 International Business Machines Corporation Configurable interposer
US8551850B2 (en) * 2009-12-07 2013-10-08 Sandisk 3D Llc Methods of forming a reversible resistance-switching metal-insulator-metal structure
US8213243B2 (en) 2009-12-15 2012-07-03 Sandisk 3D Llc Program cycle skip
US8223525B2 (en) 2009-12-15 2012-07-17 Sandisk 3D Llc Page register outside array and sense amplifier interface
US8026178B2 (en) * 2010-01-12 2011-09-27 Sandisk 3D Llc Patterning method for high density pillar structures
US7923305B1 (en) 2010-01-12 2011-04-12 Sandisk 3D Llc Patterning method for high density pillar structures
US8415238B2 (en) 2010-01-14 2013-04-09 International Business Machines Corporation Three dimensional integration and methods of through silicon via creation
US8399180B2 (en) * 2010-01-14 2013-03-19 International Business Machines Corporation Three dimensional integration with through silicon vias having multiple diameters
US8232636B2 (en) * 2010-01-26 2012-07-31 International Business Machines Corporation Reliability enhancement of metal thermal interface
US8431492B2 (en) * 2010-02-02 2013-04-30 Sandisk 3D Llc Memory cell that includes a sidewall collar for pillar isolation and methods of forming the same
US8304863B2 (en) 2010-02-09 2012-11-06 International Business Machines Corporation Electromigration immune through-substrate vias
US8389375B2 (en) 2010-02-11 2013-03-05 Sandisk 3D Llc Memory cell formed using a recess and methods for forming the same
US8461035B1 (en) 2010-09-30 2013-06-11 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
US8026521B1 (en) 2010-10-11 2011-09-27 Monolithic 3D Inc. Semiconductor device and structure
US8541819B1 (en) 2010-12-09 2013-09-24 Monolithic 3D Inc. Semiconductor device and structure
US9099526B2 (en) 2010-02-16 2015-08-04 Monolithic 3D Inc. Integrated circuit device and structure
US8492886B2 (en) 2010-02-16 2013-07-23 Monolithic 3D Inc 3D integrated circuit with logic
US8373230B1 (en) 2010-10-13 2013-02-12 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
JP2013520761A (ja) 2010-02-18 2013-06-06 サンディスク スリーディー，エルエルシー 可逆的抵抗性スイッチング素子のためのステップ・ソフト・プログラム
US8686419B2 (en) 2010-02-23 2014-04-01 Sandisk 3D Llc Structure and fabrication method for resistance-change memory cell in 3-D memory
US8237146B2 (en) 2010-02-24 2012-08-07 Sandisk 3D Llc Memory cell with silicon-containing carbon switching layer and methods for forming the same
US20110210306A1 (en) * 2010-02-26 2011-09-01 Yubao Li Memory cell that includes a carbon-based memory element and methods of forming the same
US8481394B2 (en) * 2010-03-04 2013-07-09 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods of forming the same
US8354660B2 (en) * 2010-03-16 2013-01-15 Sandisk 3D Llc Bottom electrodes for use with metal oxide resistivity switching layers
US8114707B2 (en) 2010-03-25 2012-02-14 International Business Machines Corporation Method of forming a multi-chip stacked structure including a thin interposer chip having a face-to-back bonding with another chip
US20110244683A1 (en) 2010-04-01 2011-10-06 Michiaki Sano Fabricating Voids Using Slurry Protect Coat Before Chemical-Mechanical Polishing
TW201207852A (en) * 2010-04-05 2012-02-16 Mosaid Technologies Inc Semiconductor memory device having a three-dimensional structure
US8471360B2 (en) 2010-04-14 2013-06-25 Sandisk 3D Llc Memory cell with carbon switching material having a reduced cross-sectional area and methods for forming the same
US8436447B2 (en) 2010-04-23 2013-05-07 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods of forming the same
US8385102B2 (en) 2010-05-11 2013-02-26 Sandisk 3D Llc Alternating bipolar forming voltage for resistivity-switching elements
US20110278529A1 (en) 2010-05-14 2011-11-17 Huiwen Xu Memory employing diamond-like carbon resistivity-switchable material and methods of forming the same
US8395942B2 (en) 2010-05-17 2013-03-12 Sandisk Technologies Inc. Junctionless TFT NAND flash memory
US8723335B2 (en) 2010-05-20 2014-05-13 Sang-Yun Lee Semiconductor circuit structure and method of forming the same using a capping layer
US8232648B2 (en) 2010-06-01 2012-07-31 International Business Machines Corporation Semiconductor article having a through silicon via and guard ring
KR20110132820A (ko) * 2010-06-03 2011-12-09 삼성전자주식회사 다수개의 반도체 레이어가 적층 된 반도체 메모리 장치 및 시스템
US8737111B2 (en) 2010-06-18 2014-05-27 Sandisk 3D Llc Memory cell with resistance-switching layers
US8520425B2 (en) 2010-06-18 2013-08-27 Sandisk 3D Llc Resistive random access memory with low current operation
US8724369B2 (en) 2010-06-18 2014-05-13 Sandisk 3D Llc Composition of memory cell with resistance-switching layers
US8564305B2 (en) * 2010-06-22 2013-10-22 National Tsing Hua University Discontinuous type layer-ID detector for 3D-IC and method of the same
US9159739B2 (en) 2010-06-30 2015-10-13 Sandisk Technologies Inc. Floating gate ultrahigh density vertical NAND flash memory
US8928061B2 (en) 2010-06-30 2015-01-06 SanDisk Technologies, Inc. Three dimensional NAND device with silicide containing floating gates
US10128261B2 (en) 2010-06-30 2018-11-13 Sandisk Technologies Llc Cobalt-containing conductive layers for control gate electrodes in a memory structure
US9397093B2 (en) 2013-02-08 2016-07-19 Sandisk Technologies Inc. Three dimensional NAND device with semiconductor, metal or silicide floating gates and method of making thereof
KR101079300B1 (ko) * 2010-07-08 2011-11-04 윤재만 반도체 메모리 장치
US8492878B2 (en) 2010-07-21 2013-07-23 International Business Machines Corporation Metal-contamination-free through-substrate via structure
US8901613B2 (en) 2011-03-06 2014-12-02 Monolithic 3D Inc. Semiconductor device and structure for heat removal
US8642416B2 (en) 2010-07-30 2014-02-04 Monolithic 3D Inc. Method of forming three dimensional integrated circuit devices using layer transfer technique
US10217667B2 (en) 2011-06-28 2019-02-26 Monolithic 3D Inc. 3D semiconductor device, fabrication method and system
US9953925B2 (en) 2011-06-28 2018-04-24 Monolithic 3D Inc. Semiconductor system and device
US9219005B2 (en) 2011-06-28 2015-12-22 Monolithic 3D Inc. Semiconductor system and device
KR20120019882A (ko) * 2010-08-27 2012-03-07 주식회사 하이닉스반도체 반도체 집적회로
US8883589B2 (en) 2010-09-28 2014-11-11 Sandisk 3D Llc Counter doping compensation methods to improve diode performance
US8273610B2 (en) 2010-11-18 2012-09-25 Monolithic 3D Inc. Method of constructing a semiconductor device and structure
US11482440B2 (en) 2010-12-16 2022-10-25 Monolithic 3D Inc. 3D semiconductor device and structure with a built-in test circuit for repairing faulty circuits
US8163581B1 (en) 2010-10-13 2012-04-24 Monolith IC 3D Semiconductor and optoelectronic devices
US10497713B2 (en) 2010-11-18 2019-12-03 Monolithic 3D Inc. 3D semiconductor memory device and structure
US11018191B1 (en) 2010-10-11 2021-05-25 Monolithic 3D Inc. 3D semiconductor device and structure
US11257867B1 (en) 2010-10-11 2022-02-22 Monolithic 3D Inc. 3D semiconductor device and structure with oxide bonds
US11024673B1 (en) 2010-10-11 2021-06-01 Monolithic 3D Inc. 3D semiconductor device and structure
US11600667B1 (en) 2010-10-11 2023-03-07 Monolithic 3D Inc. Method to produce 3D semiconductor devices and structures with memory
US10896931B1 (en) 2010-10-11 2021-01-19 Monolithic 3D Inc. 3D semiconductor device and structure
US11469271B2 (en) 2010-10-11 2022-10-11 Monolithic 3D Inc. Method to produce 3D semiconductor devices and structures with memory
US11315980B1 (en) 2010-10-11 2022-04-26 Monolithic 3D Inc. 3D semiconductor device and structure with transistors
US10290682B2 (en) 2010-10-11 2019-05-14 Monolithic 3D Inc. 3D IC semiconductor device and structure with stacked memory
US8114757B1 (en) 2010-10-11 2012-02-14 Monolithic 3D Inc. Semiconductor device and structure
US11227897B2 (en) 2010-10-11 2022-01-18 Monolithic 3D Inc. Method for producing a 3D semiconductor memory device and structure
US11158674B2 (en) 2010-10-11 2021-10-26 Monolithic 3D Inc. Method to produce a 3D semiconductor device and structure
US11605663B2 (en) 2010-10-13 2023-03-14 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors and wafer bonding
US11063071B1 (en) 2010-10-13 2021-07-13 Monolithic 3D Inc. Multilevel semiconductor device and structure with waveguides
US11163112B2 (en) 2010-10-13 2021-11-02 Monolithic 3D Inc. Multilevel semiconductor device and structure with electromagnetic modulators
US11694922B2 (en) 2010-10-13 2023-07-04 Monolithic 3D Inc. Multilevel semiconductor device and structure with oxide bonding
US11869915B2 (en) 2010-10-13 2024-01-09 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors and wafer bonding
US11984438B2 (en) 2010-10-13 2024-05-14 Monolithic 3D Inc. Multilevel semiconductor device and structure with oxide bonding
US12080743B2 (en) 2010-10-13 2024-09-03 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors and wafer bonding
US11855100B2 (en) 2010-10-13 2023-12-26 Monolithic 3D Inc. Multilevel semiconductor device and structure with oxide bonding
US11133344B2 (en) 2010-10-13 2021-09-28 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors
US11437368B2 (en) 2010-10-13 2022-09-06 Monolithic 3D Inc. Multilevel semiconductor device and structure with oxide bonding
US10998374B1 (en) 2010-10-13 2021-05-04 Monolithic 3D Inc. Multilevel semiconductor device and structure
US8379458B1 (en) 2010-10-13 2013-02-19 Monolithic 3D Inc. Semiconductor device and structure
US10679977B2 (en) 2010-10-13 2020-06-09 Monolithic 3D Inc. 3D microdisplay device and structure
US11404466B2 (en) 2010-10-13 2022-08-02 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors
US10978501B1 (en) 2010-10-13 2021-04-13 Monolithic 3D Inc. Multilevel semiconductor device and structure with waveguides
US9197804B1 (en) 2011-10-14 2015-11-24 Monolithic 3D Inc. Semiconductor and optoelectronic devices
US11929372B2 (en) 2010-10-13 2024-03-12 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors and wafer bonding
US10943934B2 (en) 2010-10-13 2021-03-09 Monolithic 3D Inc. Multilevel semiconductor device and structure
US11043523B1 (en) 2010-10-13 2021-06-22 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors
US11855114B2 (en) 2010-10-13 2023-12-26 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors and wafer bonding
US11327227B2 (en) 2010-10-13 2022-05-10 Monolithic 3D Inc. Multilevel semiconductor device and structure with electromagnetic modulators
US11164898B2 (en) 2010-10-13 2021-11-02 Monolithic 3D Inc. Multilevel semiconductor device and structure
US10833108B2 (en) 2010-10-13 2020-11-10 Monolithic 3D Inc. 3D microdisplay device and structure
US12094892B2 (en) 2010-10-13 2024-09-17 Monolithic 3D Inc. 3D micro display device and structure
US8389971B2 (en) 2010-10-14 2013-03-05 Sandisk 3D Llc Memory cells having storage elements that share material layers with steering elements and methods of forming the same
US8841648B2 (en) 2010-10-14 2014-09-23 Sandisk 3D Llc Multi-level memory arrays with memory cells that employ bipolar storage elements and methods of forming the same
KR101973212B1 (ko) * 2010-11-05 2019-04-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8409989B2 (en) 2010-11-11 2013-04-02 International Business Machines Corporation Structure and method to fabricate a body contact
US8462580B2 (en) 2010-11-17 2013-06-11 Sandisk 3D Llc Memory system with reversible resistivity-switching using pulses of alternatrie polarity
US8355271B2 (en) 2010-11-17 2013-01-15 Sandisk 3D Llc Memory system with reversible resistivity-switching using pulses of alternate polarity
US11615977B2 (en) 2010-11-18 2023-03-28 Monolithic 3D Inc. 3D semiconductor memory device and structure
US11004719B1 (en) 2010-11-18 2021-05-11 Monolithic 3D Inc. Methods for producing a 3D semiconductor memory device and structure
US11862503B2 (en) 2010-11-18 2024-01-02 Monolithic 3D Inc. Method for producing a 3D semiconductor device and structure with memory cells and multiple metal layers
US11018042B1 (en) 2010-11-18 2021-05-25 Monolithic 3D Inc. 3D semiconductor memory device and structure
US11735462B2 (en) 2010-11-18 2023-08-22 Monolithic 3D Inc. 3D semiconductor device and structure with single-crystal layers
US12068187B2 (en) 2010-11-18 2024-08-20 Monolithic 3D Inc. 3D semiconductor device and structure with bonding and DRAM memory cells
US11610802B2 (en) 2010-11-18 2023-03-21 Monolithic 3D Inc. Method for producing a 3D semiconductor device and structure with single crystal transistors and metal gate electrodes
US11094576B1 (en) 2010-11-18 2021-08-17 Monolithic 3D Inc. Methods for producing a 3D semiconductor memory device and structure
US11121021B2 (en) 2010-11-18 2021-09-14 Monolithic 3D Inc. 3D semiconductor device and structure
US11854857B1 (en) 2010-11-18 2023-12-26 Monolithic 3D Inc. Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers
US11211279B2 (en) 2010-11-18 2021-12-28 Monolithic 3D Inc. Method for processing a 3D integrated circuit and structure
US11784082B2 (en) 2010-11-18 2023-10-10 Monolithic 3D Inc. 3D semiconductor device and structure with bonding
US11443971B2 (en) 2010-11-18 2022-09-13 Monolithic 3D Inc. 3D semiconductor device and structure with memory
US11804396B2 (en) 2010-11-18 2023-10-31 Monolithic 3D Inc. Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers
US11482438B2 (en) 2010-11-18 2022-10-25 Monolithic 3D Inc. Methods for producing a 3D semiconductor memory device and structure
US11482439B2 (en) 2010-11-18 2022-10-25 Monolithic 3D Inc. Methods for producing a 3D semiconductor memory device comprising charge trap junction-less transistors
US11569117B2 (en) 2010-11-18 2023-01-31 Monolithic 3D Inc. 3D semiconductor device and structure with single-crystal layers
US11521888B2 (en) 2010-11-18 2022-12-06 Monolithic 3D Inc. 3D semiconductor device and structure with high-k metal gate transistors
US11164770B1 (en) 2010-11-18 2021-11-02 Monolithic 3D Inc. Method for producing a 3D semiconductor memory device and structure
US12100611B2 (en) 2010-11-18 2024-09-24 Monolithic 3D Inc. Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers
US11508605B2 (en) 2010-11-18 2022-11-22 Monolithic 3D Inc. 3D semiconductor memory device and structure
US11031275B2 (en) 2010-11-18 2021-06-08 Monolithic 3D Inc. 3D semiconductor device and structure with memory
US11355380B2 (en) 2010-11-18 2022-06-07 Monolithic 3D Inc. Methods for producing 3D semiconductor memory device and structure utilizing alignment marks
US11107721B2 (en) 2010-11-18 2021-08-31 Monolithic 3D Inc. 3D semiconductor device and structure with NAND logic
US11355381B2 (en) 2010-11-18 2022-06-07 Monolithic 3D Inc. 3D semiconductor memory device and structure
US11495484B2 (en) 2010-11-18 2022-11-08 Monolithic 3D Inc. 3D semiconductor devices and structures with at least two single-crystal layers
US12033884B2 (en) 2010-11-18 2024-07-09 Monolithic 3D Inc. Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers
US11923230B1 (en) 2010-11-18 2024-03-05 Monolithic 3D Inc. 3D semiconductor device and structure with bonding
US11901210B2 (en) 2010-11-18 2024-02-13 Monolithic 3D Inc. 3D semiconductor device and structure with memory
US8854865B2 (en) * 2010-11-24 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
CN103794620B (zh) 2010-12-14 2016-08-24 桑迪士克科技有限责任公司 具有三个用于行选择的器件驱动器的三维非易失性存储器
US8824183B2 (en) 2010-12-14 2014-09-02 Sandisk 3D Llc Non-volatile memory having 3D array of read/write elements with vertical bit lines and select devices and methods thereof
US8546961B2 (en) 2011-01-10 2013-10-01 International Business Machines Corporation Alignment marks to enable 3D integration
TWI473105B (zh) * 2011-01-18 2015-02-11 Macronix Int Co Ltd 具有錯誤自動檢查與更正位元之三維記憶體結構
US9601178B2 (en) * 2011-01-26 2017-03-21 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
US8866124B2 (en) 2011-02-02 2014-10-21 Sandisk 3D Llc Diodes with native oxide regions for use in memory arrays and methods of forming the same
US20120223414A1 (en) 2011-03-02 2012-09-06 Schricker April D Methods for increasing bottom electrode performance in carbon-based memory devices
US9053766B2 (en) 2011-03-03 2015-06-09 Sandisk 3D, Llc Three dimensional memory system with intelligent select circuit
US8553476B2 (en) 2011-03-03 2013-10-08 Sandisk 3D Llc Three dimensional memory system with page of data across word lines
US8374051B2 (en) 2011-03-03 2013-02-12 Sandisk 3D Llc Three dimensional memory system with column pipeline
US8975670B2 (en) 2011-03-06 2015-03-10 Monolithic 3D Inc. Semiconductor device and structure for heat removal
US9432298B1 (en) 2011-12-09 2016-08-30 P4tents1, LLC System, method, and computer program product for improving memory systems
US8699293B2 (en) 2011-04-27 2014-04-15 Sandisk 3D Llc Non-volatile storage system with dual block programming
US10388568B2 (en) 2011-06-28 2019-08-20 Monolithic 3D Inc. 3D semiconductor device and system
US8866121B2 (en) 2011-07-29 2014-10-21 Sandisk 3D Llc Current-limiting layer and a current-reducing layer in a memory device
US8659001B2 (en) 2011-09-01 2014-02-25 Sandisk 3D Llc Defect gradient to boost nonvolatile memory performance
US20130075685A1 (en) 2011-09-22 2013-03-28 Yubao Li Methods and apparatus for including an air gap in carbon-based memory devices
US8687399B2 (en) 2011-10-02 2014-04-01 Monolithic 3D Inc. Semiconductor device and structure
US9029173B2 (en) 2011-10-18 2015-05-12 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
JP2013114644A (ja) * 2011-12-01 2013-06-10 Fujitsu Ltd メモリモジュールおよび半導体記憶装置
US8637413B2 (en) 2011-12-02 2014-01-28 Sandisk 3D Llc Nonvolatile resistive memory element with a passivated switching layer
CN103946980B (zh) 2011-12-02 2017-06-20 英特尔公司 允许装置互连中的变化的堆栈式存储器
US20130148404A1 (en) 2011-12-08 2013-06-13 Abhijit Bandyopadhyay Antifuse-based memory cells having multiple memory states and methods of forming the same
US9269425B2 (en) 2011-12-30 2016-02-23 Sandisk 3D Llc Low forming voltage non-volatile storage device
US8698119B2 (en) 2012-01-19 2014-04-15 Sandisk 3D Llc Nonvolatile memory device using a tunnel oxide as a current limiter element
US8686386B2 (en) 2012-02-17 2014-04-01 Sandisk 3D Llc Nonvolatile memory device using a varistor as a current limiter element
US9000557B2 (en) 2012-03-17 2015-04-07 Zvi Or-Bach Semiconductor device and structure
US8933715B2 (en) 2012-04-08 2015-01-13 Elm Technology Corporation Configurable vertical integration
US11088050B2 (en) 2012-04-09 2021-08-10 Monolithic 3D Inc. 3D semiconductor device with isolation layers
US11694944B1 (en) 2012-04-09 2023-07-04 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and a connective path
US11616004B1 (en) 2012-04-09 2023-03-28 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and a connective path
US11476181B1 (en) 2012-04-09 2022-10-18 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US11410912B2 (en) 2012-04-09 2022-08-09 Monolithic 3D Inc. 3D semiconductor device with vias and isolation layers
US11881443B2 (en) 2012-04-09 2024-01-23 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and a connective path
US8557632B1 (en) 2012-04-09 2013-10-15 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
US11735501B1 (en) 2012-04-09 2023-08-22 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and a connective path
US10600888B2 (en) 2012-04-09 2020-03-24 Monolithic 3D Inc. 3D semiconductor device
US11594473B2 (en) 2012-04-09 2023-02-28 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and a connective path
US11164811B2 (en) 2012-04-09 2021-11-02 Monolithic 3D Inc. 3D semiconductor device with isolation layers and oxide-to-oxide bonding
US20130292634A1 (en) 2012-05-07 2013-11-07 Yung-Tin Chen Resistance-switching memory cells having reduced metal migration and low current operation and methods of forming the same
US20130304450A1 (en) * 2012-05-08 2013-11-14 StarDFX Technologies, Inc. Method for Unified High-Level Hardware Description Language Simulation Based on Parallel Computing Platforms
US9171584B2 (en) 2012-05-15 2015-10-27 Sandisk 3D Llc Three dimensional non-volatile storage with interleaved vertical select devices above and below vertical bit lines
US8828884B2 (en) 2012-05-23 2014-09-09 Sandisk Technologies Inc. Multi-level contact to a 3D memory array and method of making
US8658499B2 (en) 2012-07-09 2014-02-25 Sandisk Technologies Inc. Three dimensional NAND device and method of charge trap layer separation and floating gate formation in the NAND device
US9129715B2 (en) 2012-09-05 2015-09-08 SVXR, Inc. High speed x-ray inspection microscope
US9853053B2 (en) 2012-09-10 2017-12-26 3B Technologies, Inc. Three dimension integrated circuits employing thin film transistors
US8574929B1 (en) 2012-11-16 2013-11-05 Monolithic 3D Inc. Method to form a 3D semiconductor device and structure
US8686428B1 (en) 2012-11-16 2014-04-01 Monolithic 3D Inc. Semiconductor device and structure
US9472284B2 (en) * 2012-11-19 2016-10-18 Silicon Storage Technology, Inc. Three-dimensional flash memory system
US9111597B2 (en) * 2012-12-20 2015-08-18 Macronix International Co., Ltd. Memory device structure with decoders in a device level separate from the array level
US11063024B1 (en) 2012-12-22 2021-07-13 Monlithic 3D Inc. Method to form a 3D semiconductor device and structure
US11916045B2 (en) 2012-12-22 2024-02-27 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US11309292B2 (en) 2012-12-22 2022-04-19 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US8674470B1 (en) 2012-12-22 2014-03-18 Monolithic 3D Inc. Semiconductor device and structure
US11018116B2 (en) 2012-12-22 2021-05-25 Monolithic 3D Inc. Method to form a 3D semiconductor device and structure
US11784169B2 (en) 2012-12-22 2023-10-10 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US12051674B2 (en) 2012-12-22 2024-07-30 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US11217565B2 (en) 2012-12-22 2022-01-04 Monolithic 3D Inc. Method to form a 3D semiconductor device and structure
US11961827B1 (en) 2012-12-22 2024-04-16 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US11967583B2 (en) 2012-12-22 2024-04-23 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US11177140B2 (en) 2012-12-29 2021-11-16 Monolithic 3D Inc. 3D semiconductor device and structure
US9871034B1 (en) 2012-12-29 2018-01-16 Monolithic 3D Inc. Semiconductor device and structure
US10600657B2 (en) 2012-12-29 2020-03-24 Monolithic 3D Inc 3D semiconductor device and structure
US10651054B2 (en) 2012-12-29 2020-05-12 Monolithic 3D Inc. 3D semiconductor device and structure
US10903089B1 (en) 2012-12-29 2021-01-26 Monolithic 3D Inc. 3D semiconductor device and structure
US11430667B2 (en) 2012-12-29 2022-08-30 Monolithic 3D Inc. 3D semiconductor device and structure with bonding
US11087995B1 (en) 2012-12-29 2021-08-10 Monolithic 3D Inc. 3D semiconductor device and structure
US10892169B2 (en) 2012-12-29 2021-01-12 Monolithic 3D Inc. 3D semiconductor device and structure
US11430668B2 (en) 2012-12-29 2022-08-30 Monolithic 3D Inc. 3D semiconductor device and structure with bonding
US11004694B1 (en) 2012-12-29 2021-05-11 Monolithic 3D Inc. 3D semiconductor device and structure
US10115663B2 (en) 2012-12-29 2018-10-30 Monolithic 3D Inc. 3D semiconductor device and structure
US9385058B1 (en) 2012-12-29 2016-07-05 Monolithic 3D Inc. Semiconductor device and structure
US20140241031A1 (en) 2013-02-28 2014-08-28 Sandisk 3D Llc Dielectric-based memory cells having multi-level one-time programmable and bi-level rewriteable operating modes and methods of forming the same
US9007810B2 (en) 2013-02-28 2015-04-14 Sandisk 3D Llc ReRAM forming with reset and iload compensation
US9202694B2 (en) 2013-03-04 2015-12-01 Sandisk 3D Llc Vertical bit line non-volatile memory systems and methods of fabrication
US9411722B2 (en) 2013-03-04 2016-08-09 Sandisk Technologies Llc Asynchronous FIFO buffer for memory access
US9165933B2 (en) 2013-03-07 2015-10-20 Sandisk 3D Llc Vertical bit line TFT decoder for high voltage operation
US20140252298A1 (en) 2013-03-10 2014-09-11 Sandisk 3D Llc Methods and apparatus for metal oxide reversible resistance-switching memory devices
US8902663B1 (en) 2013-03-11 2014-12-02 Monolithic 3D Inc. Method of maintaining a memory state
US10325651B2 (en) 2013-03-11 2019-06-18 Monolithic 3D Inc. 3D semiconductor device with stacked memory
US12094965B2 (en) 2013-03-11 2024-09-17 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and memory cells
US11869965B2 (en) 2013-03-11 2024-01-09 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and memory cells
US11935949B1 (en) 2013-03-11 2024-03-19 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and memory cells
US11398569B2 (en) 2013-03-12 2022-07-26 Monolithic 3D Inc. 3D semiconductor device and structure
US9230987B2 (en) 2014-02-20 2016-01-05 Sandisk Technologies Inc. Multilevel memory stack structure and methods of manufacturing the same
US11923374B2 (en) 2013-03-12 2024-03-05 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US11088130B2 (en) 2014-01-28 2021-08-10 Monolithic 3D Inc. 3D semiconductor device and structure
US12100646B2 (en) 2013-03-12 2024-09-24 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US8994404B1 (en) 2013-03-12 2015-03-31 Monolithic 3D Inc. Semiconductor device and structure
US10840239B2 (en) 2014-08-26 2020-11-17 Monolithic 3D Inc. 3D semiconductor device and structure
US9117749B1 (en) 2013-03-15 2015-08-25 Monolithic 3D Inc. Semiconductor device and structure
US10224279B2 (en) 2013-03-15 2019-03-05 Monolithic 3D Inc. Semiconductor device and structure
US8947944B2 (en) 2013-03-15 2015-02-03 Sandisk 3D Llc Program cycle skip evaluation before write operations in non-volatile memory
US9223665B2 (en) 2013-03-15 2015-12-29 Micron Technology, Inc. Apparatuses and methods for memory testing and repair
US8947972B2 (en) 2013-03-15 2015-02-03 Sandisk 3D Llc Dynamic address grouping for parallel programming in non-volatile memory
US9093480B2 (en) 2013-04-01 2015-07-28 Sandisk Technologies Inc. Spacer passivation for high aspect ratio etching of multilayer stacks for three dimensional NAND device
US9099496B2 (en) 2013-04-01 2015-08-04 Sandisk Technologies Inc. Method of forming an active area with floating gate negative offset profile in FG NAND memory
US11720736B2 (en) 2013-04-15 2023-08-08 Monolithic 3D Inc. Automation methods for 3D integrated circuits and devices
US11341309B1 (en) 2013-04-15 2022-05-24 Monolithic 3D Inc. Automation for monolithic 3D devices
US11574109B1 (en) 2013-04-15 2023-02-07 Monolithic 3D Inc Automation methods for 3D integrated circuits and devices
US11487928B2 (en) 2013-04-15 2022-11-01 Monolithic 3D Inc. Automation for monolithic 3D devices
US9021414B1 (en) 2013-04-15 2015-04-28 Monolithic 3D Inc. Automation for monolithic 3D devices
US11030371B2 (en) 2013-04-15 2021-06-08 Monolithic 3D Inc. Automation for monolithic 3D devices
US11270055B1 (en) 2013-04-15 2022-03-08 Monolithic 3D Inc. Automation for monolithic 3D devices
KR101531843B1 (ko) * 2013-05-02 2015-06-26 하나 마이크론(주) 집적회로 소자 패키지의 제조 방법
US9252151B2 (en) 2013-07-08 2016-02-02 Sandisk Technologies Inc. Three dimensional NAND device with birds beak containing floating gates and method of making thereof
TWI493568B (zh) * 2013-08-19 2015-07-21 Ind Tech Res Inst 記憶體裝置
US9105468B2 (en) 2013-09-06 2015-08-11 Sandisk 3D Llc Vertical bit line wide band gap TFT decoder
WO2015038246A2 (en) 2013-09-15 2015-03-19 SanDisk Technologies, Inc. Method of integrating select gate source and memory hole for three-dimensional non-volatile memory device
US9230980B2 (en) 2013-09-15 2016-01-05 Sandisk Technologies Inc. Single-semiconductor-layer channel in a memory opening for a three-dimensional non-volatile memory device
KR102136845B1 (ko) 2013-09-16 2020-07-23 삼성전자 주식회사 적층형 이미지 센서 및 그 제조방법
US9496274B2 (en) 2013-09-17 2016-11-15 Sandisk Technologies Llc Three-dimensional non-volatile memory device
US9460931B2 (en) 2013-09-17 2016-10-04 Sandisk Technologies Llc High aspect ratio memory hole channel contact formation
US9711225B2 (en) 2013-10-16 2017-07-18 Sandisk Technologies Llc Regrouping and skipping cycles in non-volatile memory
TW201535390A (zh) * 2013-11-08 2015-09-16 Conversant Intellectual Property Man Inc 具有上體連接的三維非揮發性記憶體單元結構
US9449983B2 (en) 2013-12-19 2016-09-20 Sandisk Technologies Llc Three dimensional NAND device with channel located on three sides of lower select gate and method of making thereof
US9449924B2 (en) 2013-12-20 2016-09-20 Sandisk Technologies Llc Multilevel contact to a 3D memory array and method of making thereof
US9263379B2 (en) 2013-12-31 2016-02-16 Freescale Semiconductor, Inc. IC package with metal interconnect structure implemented between metal layers of die and interposer
US9230905B2 (en) 2014-01-08 2016-01-05 Sandisk 3D Llc Trench multilevel contact to a 3D memory array and method of making thereof
US11031394B1 (en) 2014-01-28 2021-06-08 Monolithic 3D Inc. 3D semiconductor device and structure
US10297586B2 (en) 2015-03-09 2019-05-21 Monolithic 3D Inc. Methods for processing a 3D semiconductor device
US11107808B1 (en) 2014-01-28 2021-08-31 Monolithic 3D Inc. 3D semiconductor device and structure
US12094829B2 (en) 2014-01-28 2024-09-17 Monolithic 3D Inc. 3D semiconductor device and structure
US9362338B2 (en) 2014-03-03 2016-06-07 Sandisk Technologies Inc. Vertical thin film transistors in non-volatile storage systems
US9379246B2 (en) 2014-03-05 2016-06-28 Sandisk Technologies Inc. Vertical thin film transistor selection devices and methods of fabrication
US9343507B2 (en) 2014-03-12 2016-05-17 Sandisk 3D Llc Dual channel vertical field effect transistor including an embedded electrode
US9331088B2 (en) 2014-03-25 2016-05-03 Sandisk 3D Llc Transistor device with gate bottom isolation and method of making thereof
US9224747B2 (en) 2014-03-26 2015-12-29 Sandisk Technologies Inc. Vertical NAND device with shared word line steps
KR102258739B1 (ko) 2014-03-26 2021-06-02 삼성전자주식회사 하이브리드 적층 구조를 갖는 반도체 소자 및 그 제조방법
US9552991B2 (en) 2014-04-30 2017-01-24 Sandisk Technologies Llc Trench vertical NAND and method of making thereof
US9443867B2 (en) 2014-04-30 2016-09-13 Sandisk Technologies Llc Method of making damascene select gate in memory device
US9331094B2 (en) 2014-04-30 2016-05-03 Sandisk Technologies Inc. Method of selective filling of memory openings
US9548313B2 (en) * 2014-05-30 2017-01-17 Sandisk Technologies Llc Method of making a monolithic three dimensional NAND string using a select gate etch stop layer
US9553146B2 (en) 2014-06-05 2017-01-24 Sandisk Technologies Llc Three dimensional NAND device having a wavy charge storage layer
US9559117B2 (en) 2014-06-17 2017-01-31 Sandisk Technologies Llc Three-dimensional non-volatile memory device having a silicide source line and method of making thereof
US9524779B2 (en) 2014-06-24 2016-12-20 Sandisk Technologies Llc Three dimensional vertical NAND device with floating gates
US9768270B2 (en) 2014-06-25 2017-09-19 Sandisk Technologies Llc Method of selectively depositing floating gate material in a memory device
US9379124B2 (en) 2014-06-25 2016-06-28 Sandisk Technologies Inc. Vertical floating gate NAND with selectively deposited ALD metal films
US9455263B2 (en) 2014-06-27 2016-09-27 Sandisk Technologies Llc Three dimensional NAND device with channel contacting conductive source line and method of making thereof
US9397107B2 (en) 2014-06-30 2016-07-19 Sandisk Technologies Llc Methods of making three dimensional NAND devices
US9305932B2 (en) 2014-06-30 2016-04-05 Sandisk Technologies Inc. Methods of making three dimensional NAND devices
US9177966B1 (en) 2014-07-08 2015-11-03 Sandisk Technologies Inc. Three dimensional NAND devices with air gap or low-k core
US9627009B2 (en) 2014-07-25 2017-04-18 Sandisk Technologies Llc Interleaved grouped word lines for three dimensional non-volatile storage
US9570460B2 (en) 2014-07-29 2017-02-14 Sandisk Technologies Llc Spacer passivation for high-aspect ratio opening film removal and cleaning
US9437658B2 (en) 2014-08-05 2016-09-06 Sandisk Technologies Llc Fully isolated selector for memory device
US9136130B1 (en) 2014-08-11 2015-09-15 Sandisk Technologies Inc. Three dimensional NAND string with discrete charge trap segments
US9356031B2 (en) 2014-08-11 2016-05-31 Sandisk Technologies Inc. Three dimensional NAND string memory devices with voids enclosed between control gate electrodes
KR102204391B1 (ko) 2014-08-18 2021-01-18 삼성전자주식회사 공유 가능한 ecc 셀 어레이를 갖는 메모리 장치
US9887207B2 (en) 2014-08-18 2018-02-06 Sandisk Technologies Llc Three dimensional NAND device having dummy memory holes and method of making thereof
US9583539B2 (en) 2014-08-19 2017-02-28 Sandisk Technologies Llc Word line connection for memory device and method of making thereof
EP3183748B1 (en) 2014-08-20 2021-03-10 SanDisk Technologies LLC Floating gate ultrahigh density vertical nand flash memory and method of making thereof
US9230983B1 (en) 2014-08-20 2016-01-05 Sandisk Technologies Inc. Metal word lines for three dimensional memory devices
US9230974B1 (en) 2014-08-26 2016-01-05 Sandisk Technologies Inc. Methods of selective removal of blocking dielectric in NAND memory strings
US9691884B2 (en) 2014-08-26 2017-06-27 Sandisk Technologies Llc Monolithic three dimensional NAND strings and methods of fabrication thereof
US9401309B2 (en) 2014-08-26 2016-07-26 Sandisk Technologies Llc Multiheight contact via structures for a multilevel interconnect structure
US9576975B2 (en) 2014-08-26 2017-02-21 Sandisk Technologies Llc Monolithic three-dimensional NAND strings and methods of fabrication thereof
US9601502B2 (en) 2014-08-26 2017-03-21 Sandisk Technologies Llc Multiheight contact via structures for a multilevel interconnect structure
US9236392B1 (en) 2014-08-26 2016-01-12 Sandisk Technologies Inc. Multiheight electrically conductive via contacts for a multilevel interconnect structure
US9620514B2 (en) 2014-09-05 2017-04-11 Sandisk Technologies Llc 3D semicircular vertical NAND string with self aligned floating gate or charge trap cell memory cells and methods of fabricating and operating the same
US9666594B2 (en) 2014-09-05 2017-05-30 Sandisk Technologies Llc Multi-charge region memory cells for a vertical NAND device
US9455267B2 (en) 2014-09-19 2016-09-27 Sandisk Technologies Llc Three dimensional NAND device having nonlinear control gate electrodes and method of making thereof
US9412749B1 (en) 2014-09-19 2016-08-09 Sandisk Technologies Llc Three dimensional memory device having well contact pillar and method of making thereof
US9666590B2 (en) 2014-09-24 2017-05-30 Sandisk Technologies Llc High stack 3D memory and method of making
US9515085B2 (en) 2014-09-26 2016-12-06 Sandisk Technologies Llc Vertical memory device with bit line air gap
US9230984B1 (en) 2014-09-30 2016-01-05 Sandisk Technologies Inc Three dimensional memory device having comb-shaped source electrode and methods of making thereof
US9331093B2 (en) 2014-10-03 2016-05-03 Sandisk Technologies Inc. Three dimensional NAND device with silicon germanium heterostructure channel
US9368509B2 (en) 2014-10-15 2016-06-14 Sandisk Technologies Inc. Three-dimensional memory structure having self-aligned drain regions and methods of making thereof
US9305934B1 (en) 2014-10-17 2016-04-05 Sandisk Technologies Inc. Vertical NAND device containing peripheral devices on epitaxial semiconductor pedestal
US9530787B2 (en) 2014-10-20 2016-12-27 Sandisk Technologies Llc Batch contacts for multiple electrically conductive layers
US9305937B1 (en) 2014-10-21 2016-04-05 Sandisk Technologies Inc. Bottom recess process for an outer blocking dielectric layer inside a memory opening
US9449981B2 (en) 2014-10-21 2016-09-20 Sandisk Technologies Llc Three dimensional NAND string memory devices and methods of fabrication thereof
US20160118391A1 (en) 2014-10-22 2016-04-28 SanDisk Technologies, Inc. Deuterium anneal of semiconductor channels in a three-dimensional memory structure
US9825051B2 (en) 2014-10-22 2017-11-21 Sandisk Technologies Llc Three dimensional NAND device containing fluorine doped layer and method of making thereof
US9379132B2 (en) 2014-10-24 2016-06-28 Sandisk Technologies Inc. NAND memory strings and methods of fabrication thereof
US9666799B2 (en) 2014-10-31 2017-05-30 Sandisk Technologies Llc Concave word line and convex interlayer dielectric for protecting a read/write layer
US9449980B2 (en) 2014-10-31 2016-09-20 Sandisk Technologies Llc Band gap tailoring for a tunneling dielectric for a three-dimensional memory structure
US9230979B1 (en) 2014-10-31 2016-01-05 Sandisk Technologies Inc. High dielectric constant etch stop layer for a memory structure
US9620712B2 (en) 2014-10-31 2017-04-11 Sandisk Technologies Llc Concave word line and convex interlayer dielectric for protecting a read/write layer
US9236396B1 (en) 2014-11-12 2016-01-12 Sandisk Technologies Inc. Three dimensional NAND device and method of making thereof
US9305849B1 (en) 2014-11-12 2016-04-05 Sandisk Technologies Inc. Method of making a three dimensional NAND device
US9524981B2 (en) 2015-05-04 2016-12-20 Sandisk Technologies Llc Three dimensional memory device with hybrid source electrode for wafer warpage reduction
US9419135B2 (en) 2014-11-13 2016-08-16 Sandisk Technologies Llc Three dimensional NAND device having reduced wafer bowing and method of making thereof
US9698152B2 (en) 2014-11-13 2017-07-04 Sandisk Technologies Llc Three-dimensional memory structure with multi-component contact via structure and method of making thereof
US9496419B2 (en) 2014-11-25 2016-11-15 Sandisk Technologies Llc Ruthenium nucleation layer for control gate electrodes in a memory structure
US9570455B2 (en) 2014-11-25 2017-02-14 Sandisk Technologies Llc Metal word lines for three dimensional memory devices
US9698223B2 (en) 2014-11-25 2017-07-04 Sandisk Technologies Llc Memory device containing stress-tunable control gate electrodes
US9728499B2 (en) 2014-11-26 2017-08-08 Sandisk Technologies Llc Set of stepped surfaces formation for a multilevel interconnect structure
WO2016085581A1 (en) 2014-11-26 2016-06-02 SanDisk Technologies, Inc. Set of Stepped Surfaces Formation for a Multilevel Interconnect Structure
US9502429B2 (en) 2014-11-26 2016-11-22 Sandisk Technologies Llc Set of stepped surfaces formation for a multilevel interconnect structure
US9553100B2 (en) 2014-12-04 2017-01-24 Sandisk Techologies Llc Selective floating gate semiconductor material deposition in a three-dimensional memory structure
US9754956B2 (en) 2014-12-04 2017-09-05 Sandisk Technologies Llc Uniform thickness blocking dielectric portions in a three-dimensional memory structure
US9793288B2 (en) 2014-12-04 2017-10-17 Sandisk Technologies Llc Methods of fabricating memory device with spaced-apart semiconductor charge storage regions
US9576971B2 (en) 2014-12-09 2017-02-21 Sandisk Technologies Llc Three-dimensional memory structure having a back gate electrode
US9355727B1 (en) 2014-12-09 2016-05-31 Sandisk Technologies Inc. Three-dimensional memory structure having a back gate electrode
US9484357B2 (en) 2014-12-16 2016-11-01 Sandisk Technologies Llc Selective blocking dielectric formation in a three-dimensional memory structure
US9515079B2 (en) 2014-12-16 2016-12-06 Sandisk Technologies Llc Three dimensional memory device with blocking dielectric having enhanced protection against fluorine attack
WO2016099580A2 (en) 2014-12-23 2016-06-23 Lupino James John Three dimensional integrated circuits employing thin film transistors
US9711524B2 (en) 2015-01-13 2017-07-18 Sandisk Technologies Llc Three-dimensional memory device containing plural select gate transistors having different characteristics and method of making thereof
US9478558B2 (en) 2015-01-20 2016-10-25 Sandisk Technologies Llc Semiconductor structure with concave blocking dielectric sidewall and method of making thereof by isotropically etching the blocking dielectric layer
US9437543B2 (en) 2015-01-22 2016-09-06 Sandisk Technologies Llc Composite contact via structure containing an upper portion which fills a cavity within a lower portion
US9780182B2 (en) 2015-02-04 2017-10-03 Sandisk Technologies Llc Molybdenum-containing conductive layers for control gate electrodes in a memory structure
US9984963B2 (en) 2015-02-04 2018-05-29 Sandisk Technologies Llc Cobalt-containing conductive layers for control gate electrodes in a memory structure
US10741572B2 (en) 2015-02-04 2020-08-11 Sandisk Technologies Llc Three-dimensional memory device having multilayer word lines containing selectively grown cobalt or ruthenium and method of making the same
US9419058B1 (en) 2015-02-05 2016-08-16 Sandisk Technologies Llc Memory device with comb-shaped electrode having a plurality of electrode fingers and method of making thereof
US9627395B2 (en) 2015-02-11 2017-04-18 Sandisk Technologies Llc Enhanced channel mobility three-dimensional memory structure and method of making thereof
US9484296B2 (en) 2015-02-12 2016-11-01 Sandisk Technologies Llc Self-aligned integrated line and via structure for a three-dimensional semiconductor device
US9583615B2 (en) 2015-02-17 2017-02-28 Sandisk Technologies Llc Vertical transistor and local interconnect structure
US9343358B1 (en) 2015-02-23 2016-05-17 Sandisk Technologies Inc. Three-dimensional memory device with stress compensation layer within a word line stack
US9698202B2 (en) 2015-03-02 2017-07-04 Sandisk Technologies Llc Parallel bit line three-dimensional resistive random access memory
US9870945B2 (en) 2015-03-10 2018-01-16 Sandisk Technologies Llc Crystalline layer stack for forming conductive layers in a three-dimensional memory structure
US9812461B2 (en) 2015-03-17 2017-11-07 Sandisk Technologies Llc Honeycomb cell structure three-dimensional non-volatile memory device
US9530788B2 (en) 2015-03-17 2016-12-27 Sandisk Technologies Llc Metallic etch stop layer in a three-dimensional memory structure
US9443866B1 (en) 2015-03-24 2016-09-13 Sandisk Technologies Llc Mid-tunneling dielectric band gap modification for enhanced data retention in a three-dimensional semiconductor device
US9613975B2 (en) 2015-03-31 2017-04-04 Sandisk Technologies Llc Bridge line structure for bit line connection in a three-dimensional semiconductor device
US9799671B2 (en) 2015-04-07 2017-10-24 Sandisk Technologies Llc Three-dimensional integration schemes for reducing fluorine-induced electrical shorts
US9450023B1 (en) 2015-04-08 2016-09-20 Sandisk Technologies Llc Vertical bit line non-volatile memory with recessed word lines
US9524977B2 (en) 2015-04-15 2016-12-20 Sandisk Technologies Llc Metal-semiconductor alloy region for enhancing on current in a three-dimensional memory structure
US10825779B2 (en) 2015-04-19 2020-11-03 Monolithic 3D Inc. 3D semiconductor device and structure
US11056468B1 (en) 2015-04-19 2021-07-06 Monolithic 3D Inc. 3D semiconductor device and structure
US11011507B1 (en) 2015-04-19 2021-05-18 Monolithic 3D Inc. 3D semiconductor device and structure
US10381328B2 (en) 2015-04-19 2019-08-13 Monolithic 3D Inc. Semiconductor device and structure
US9601508B2 (en) 2015-04-27 2017-03-21 Sandisk Technologies Llc Blocking oxide in memory opening integration scheme for three-dimensional memory structure
US9397046B1 (en) 2015-04-29 2016-07-19 Sandisk Technologies Llc Fluorine-free word lines for three-dimensional memory devices
US9627403B2 (en) 2015-04-30 2017-04-18 Sandisk Technologies Llc Multilevel memory stack structure employing support pillar structures
US10074661B2 (en) 2015-05-08 2018-09-11 Sandisk Technologies Llc Three-dimensional junction memory device and method reading thereof using hole current detection
US9666281B2 (en) 2015-05-08 2017-05-30 Sandisk Technologies Llc Three-dimensional P-I-N memory device and method reading thereof using hole current detection
US9859422B2 (en) 2015-05-28 2018-01-02 Sandisk Technologies Llc Field effect transistor with elevated active regions and methods of manufacturing the same
US9443861B1 (en) 2015-05-28 2016-09-13 Sandisk Technologies Llc Fluorine-blocking insulating spacer for backside contact structure of three-dimensional memory structures
EP3262687B1 (en) 2015-06-08 2021-04-07 SanDisk Technologies LLC Three-dimensional memory device having a heterostructure quantum well channel
US9589981B2 (en) 2015-06-15 2017-03-07 Sandisk Technologies Llc Passive devices for integration with three-dimensional memory devices
US9646981B2 (en) 2015-06-15 2017-05-09 Sandisk Technologies Llc Passive devices for integration with three-dimensional memory devices
CN107431063B (zh) 2015-06-15 2020-03-31 桑迪士克科技有限责任公司 与三维存储器器件集成的无源器件
US9419012B1 (en) 2015-06-19 2016-08-16 Sandisk Technologies Llc Three-dimensional memory structure employing air gap isolation
US9356043B1 (en) 2015-06-22 2016-05-31 Sandisk Technologies Inc. Three-dimensional memory devices containing memory stack structures with position-independent threshold voltage
US10622368B2 (en) 2015-06-24 2020-04-14 Sandisk Technologies Llc Three-dimensional memory device with semicircular metal-semiconductor alloy floating gate electrodes and methods of making thereof
US9613977B2 (en) 2015-06-24 2017-04-04 Sandisk Technologies Llc Differential etch of metal oxide blocking dielectric layer for three-dimensional memory devices
US9530785B1 (en) 2015-07-21 2016-12-27 Sandisk Technologies Llc Three-dimensional memory devices having a single layer channel and methods of making thereof
US9627399B2 (en) 2015-07-24 2017-04-18 Sandisk Technologies Llc Three-dimensional memory device with metal and silicide control gates
US9679906B2 (en) 2015-08-11 2017-06-13 Sandisk Technologies Llc Three-dimensional memory devices containing memory block bridges
US9543318B1 (en) 2015-08-21 2017-01-10 Sandisk Technologies Llc Three dimensional memory device with epitaxial semiconductor pedestal for peripheral transistors
US9449987B1 (en) 2015-08-21 2016-09-20 Sandisk Technologies Llc Three dimensional memory device with epitaxial semiconductor pedestal for peripheral transistors
US11956952B2 (en) 2015-08-23 2024-04-09 Monolithic 3D Inc. Semiconductor memory device and structure
US9780143B2 (en) * 2015-08-25 2017-10-03 Western Digital Technologies, Inc. Implementing magnetic memory integration with CMOS driving circuits
US9853043B2 (en) 2015-08-25 2017-12-26 Sandisk Technologies Llc Method of making a multilevel memory stack structure using a cavity containing a sacrificial fill material
US9502471B1 (en) 2015-08-25 2016-11-22 Sandisk Technologies Llc Multi tier three-dimensional memory devices including vertically shared bit lines
US9953941B2 (en) 2015-08-25 2018-04-24 Invensas Bonding Technologies, Inc. Conductive barrier direct hybrid bonding
US10096654B2 (en) 2015-09-11 2018-10-09 Sandisk Technologies Llc Three-dimensional resistive random access memory containing self-aligned memory elements
DE112016004265T5 (de) 2015-09-21 2018-06-07 Monolithic 3D Inc. 3d halbleitervorrichtung und -struktur
US11937422B2 (en) 2015-11-07 2024-03-19 Monolithic 3D Inc. Semiconductor memory device and structure
US9646975B2 (en) 2015-09-21 2017-05-09 Sandisk Technologies Llc Lateral stack of cobalt and a cobalt-semiconductor alloy for control gate electrodes in a memory structure
US9806089B2 (en) 2015-09-21 2017-10-31 Sandisk Technologies Llc Method of making self-assembling floating gate electrodes for a three-dimensional memory device
US9576966B1 (en) 2015-09-21 2017-02-21 Sandisk Technologies Llc Cobalt-containing conductive layers for control gate electrodes in a memory structure
US12100658B2 (en) 2015-09-21 2024-09-24 Monolithic 3D Inc. Method to produce a 3D multilayer semiconductor device and structure
US11114427B2 (en) 2015-11-07 2021-09-07 Monolithic 3D Inc. 3D semiconductor processor and memory device and structure
US11978731B2 (en) 2015-09-21 2024-05-07 Monolithic 3D Inc. Method to produce a multi-level semiconductor memory device and structure
US9911748B2 (en) 2015-09-28 2018-03-06 Sandisk Technologies Llc Epitaxial source region for uniform threshold voltage of vertical transistors in 3D memory devices
US9892800B2 (en) 2015-09-30 2018-02-13 Sunrise Memory Corporation Multi-gate NOR flash thin-film transistor strings arranged in stacked horizontal active strips with vertical control gates
US11120884B2 (en) 2015-09-30 2021-09-14 Sunrise Memory Corporation Implementing logic function and generating analog signals using NOR memory strings
US10121553B2 (en) 2015-09-30 2018-11-06 Sunrise Memory Corporation Capacitive-coupled non-volatile thin-film transistor NOR strings in three-dimensional arrays
US9842651B2 (en) 2015-11-25 2017-12-12 Sunrise Memory Corporation Three-dimensional vertical NOR flash thin film transistor strings
US10522225B1 (en) 2015-10-02 2019-12-31 Monolithic 3D Inc. Semiconductor device with non-volatile memory
US9570463B1 (en) 2015-10-15 2017-02-14 Sandisk Technologies Llc Multilevel memory stack structure with joint electrode having a collar portion and methods for manufacturing the same
US9780108B2 (en) 2015-10-19 2017-10-03 Sandisk Technologies Llc Ultrathin semiconductor channel three-dimensional memory devices
US9876025B2 (en) 2015-10-19 2018-01-23 Sandisk Technologies Llc Methods for manufacturing ultrathin semiconductor channel three-dimensional memory devices
US12035531B2 (en) 2015-10-24 2024-07-09 Monolithic 3D Inc. 3D semiconductor device and structure with logic and memory
US10418369B2 (en) 2015-10-24 2019-09-17 Monolithic 3D Inc. Multi-level semiconductor memory device and structure
US12016181B2 (en) 2015-10-24 2024-06-18 Monolithic 3D Inc. 3D semiconductor device and structure with logic and memory
US10847540B2 (en) 2015-10-24 2020-11-24 Monolithic 3D Inc. 3D semiconductor memory device and structure
US11114464B2 (en) 2015-10-24 2021-09-07 Monolithic 3D Inc. 3D semiconductor device and structure
US11296115B1 (en) 2015-10-24 2022-04-05 Monolithic 3D Inc. 3D semiconductor device and structure
US12120880B1 (en) 2015-10-24 2024-10-15 Monolithic 3D Inc. 3D semiconductor device and structure with logic and memory
US11991884B1 (en) 2015-10-24 2024-05-21 Monolithic 3D Inc. 3D semiconductor device and structure with logic and memory
US9478495B1 (en) 2015-10-26 2016-10-25 Sandisk Technologies Llc Three dimensional memory device containing aluminum source contact via structure and method of making thereof
US9704920B2 (en) 2015-10-27 2017-07-11 Sandisk Technologies Llc Resistive random access memory containing a steering element and a tunneling dielectric element
US9659955B1 (en) 2015-10-28 2017-05-23 Sandisk Technologies Llc Crystalinity-dependent aluminum oxide etching for self-aligned blocking dielectric in a memory structure
US9620512B1 (en) 2015-10-28 2017-04-11 Sandisk Technologies Llc Field effect transistor with a multilevel gate electrode for integration with a multilevel memory device
US9793139B2 (en) 2015-10-29 2017-10-17 Sandisk Technologies Llc Robust nucleation layers for enhanced fluorine protection and stress reduction in 3D NAND word lines
US9899399B2 (en) 2015-10-30 2018-02-20 Sandisk Technologies Llc 3D NAND device with five-folded memory stack structure configuration
US9754958B2 (en) 2015-10-30 2017-09-05 Sandisk Technologies Llc Three-dimensional memory devices having a shaped epitaxial channel portion and method of making thereof
US9842851B2 (en) 2015-10-30 2017-12-12 Sandisk Technologies Llc Three-dimensional memory devices having a shaped epitaxial channel portion
US9812505B2 (en) 2015-11-16 2017-11-07 Sandisk Technologies Llc Non-volatile memory device containing oxygen-scavenging material portions and method of making thereof
US9837431B2 (en) 2015-11-20 2017-12-05 Sandisk Technologies Llc 3D semicircular vertical NAND string with recessed inactive semiconductor channel sections
US9799670B2 (en) 2015-11-20 2017-10-24 Sandisk Technologies Llc Three dimensional NAND device containing dielectric pillars for a buried source line and method of making thereof
US9917100B2 (en) 2015-11-20 2018-03-13 Sandisk Technologies Llc Three-dimensional NAND device containing support pedestal structures for a buried source line and method of making the same
US9831266B2 (en) 2015-11-20 2017-11-28 Sandisk Technologies Llc Three-dimensional NAND device containing support pedestal structures for a buried source line and method of making the same
US9935124B2 (en) 2015-11-25 2018-04-03 Sandisk Technologies Llc Split memory cells with unsplit select gates in a three-dimensional memory device
US9806093B2 (en) 2015-12-22 2017-10-31 Sandisk Technologies Llc Through-memory-level via structures for a three-dimensional memory device
US9530790B1 (en) 2015-12-24 2016-12-27 Sandisk Technologies Llc Three-dimensional memory device containing CMOS devices over memory stack structures
US9659956B1 (en) 2016-01-06 2017-05-23 Sandisk Technologies Llc Three-dimensional memory device containing source select gate electrodes with enhanced electrical isolation
US9754665B2 (en) 2016-01-29 2017-09-05 Sandisk Technologies Llc Vacancy-modulated conductive oxide resistive RAM device including an interfacial oxygen source layer
US9589839B1 (en) 2016-02-01 2017-03-07 Sandisk Technologies Llc Method of reducing control gate electrode curvature in three-dimensional memory devices
US9754820B2 (en) 2016-02-01 2017-09-05 Sandisk Technologies Llc Three-dimensional memory device containing an aluminum oxide etch stop layer for backside contact structure and method of making thereof
US9728551B1 (en) 2016-02-04 2017-08-08 Sandisk Technologies Llc Multi-tier replacement memory stack structure integration scheme
US9673213B1 (en) 2016-02-15 2017-06-06 Sandisk Technologies Llc Three dimensional memory device with peripheral devices under dummy dielectric layer stack and method of making thereof
US10269620B2 (en) 2016-02-16 2019-04-23 Sandisk Technologies Llc Multi-tier memory device with through-stack peripheral contact via structures and method of making thereof
US9859363B2 (en) * 2016-02-16 2018-01-02 Sandisk Technologies Llc Self-aligned isolation dielectric structures for a three-dimensional memory device
US9991280B2 (en) 2016-02-17 2018-06-05 Sandisk Technologies Llc Multi-tier three-dimensional memory devices containing annular dielectric spacers within memory openings and methods of making the same
US9721663B1 (en) 2016-02-18 2017-08-01 Sandisk Technologies Llc Word line decoder circuitry under a three-dimensional memory array
US9595535B1 (en) 2016-02-18 2017-03-14 Sandisk Technologies Llc Integration of word line switches with word line contact via structures
US10115732B2 (en) 2016-02-22 2018-10-30 Sandisk Technologies Llc Three dimensional memory device containing discrete silicon nitride charge storage regions
US9679907B1 (en) 2016-02-29 2017-06-13 Sandisk Technologies Llc Three-dimensional memory device with charge-trapping-free gate dielectric for top select gate electrode and method of making thereof
CN111384051B (zh) * 2016-03-07 2022-09-27 杭州海存信息技术有限公司 兼具语音识别功能的存储器
US10242994B2 (en) 2016-03-16 2019-03-26 Sandisk Technologies Llc Three-dimensional memory device containing annular etch-stop spacer and method of making thereof
US9768192B1 (en) 2016-03-16 2017-09-19 Sandisk Technologies Llc Three-dimensional memory device containing annular etch-stop spacer and method of making thereof
US9780034B1 (en) 2016-03-16 2017-10-03 Sandisk Technologies Llc Three-dimensional memory device containing annular etch-stop spacer and method of making thereof
US10355015B2 (en) 2016-03-23 2019-07-16 Sandisk Technologies Llc Three-dimensional NAND memory device with common bit line for multiple NAND strings in each memory block
US10224104B2 (en) 2016-03-23 2019-03-05 Sandisk Technologies Llc Three dimensional NAND memory device with common bit line for multiple NAND strings in each memory block
US9711530B1 (en) 2016-03-25 2017-07-18 Sandisk Technologies Llc Locally-trap-characteristic-enhanced charge trap layer for three-dimensional memory structures
US9812463B2 (en) 2016-03-25 2017-11-07 Sandisk Technologies Llc Three-dimensional memory device containing vertically isolated charge storage regions and method of making thereof
US9786681B1 (en) 2016-04-01 2017-10-10 Sandisk Technologies Llc Multilevel memory stack structure employing stacks of a support pedestal structure and a support pillar structure
CN105742277B (zh) * 2016-04-13 2018-06-22 中国航天科技集团公司第九研究院第七七一研究所 一种大容量立体集成sram存储器三维扩展方法
US9953697B2 (en) 2016-04-25 2018-04-24 Sandisk Technologies Llc Volatile memory device employing a resistive memory element
US10084015B2 (en) 2016-04-28 2018-09-25 Sandisk Technologies Llc Resistive memory element employing electron density modulation and structural relaxation
US9881956B2 (en) * 2016-05-06 2018-01-30 International Business Machines Corporation Heterogeneous integration using wafer-to-wafer stacking with die size adjustment
US9728547B1 (en) 2016-05-19 2017-08-08 Sandisk Technologies Llc Three-dimensional memory device with aluminum-containing etch stop layer for backside contact structure and method of making thereof
US10256248B2 (en) 2016-06-07 2019-04-09 Sandisk Technologies Llc Through-memory-level via structures between staircase regions in a three-dimensional memory device and method of making thereof
US10249640B2 (en) 2016-06-08 2019-04-02 Sandisk Technologies Llc Within-array through-memory-level via structures and method of making thereof
US9985046B2 (en) 2016-06-13 2018-05-29 Sandisk Technologies Llc Method of forming a staircase in a semiconductor device using a linear alignment control feature
US10121794B2 (en) 2016-06-20 2018-11-06 Sandisk Technologies Llc Three-dimensional memory device having epitaxial germanium-containing vertical channel and method of making thereof
US10361213B2 (en) 2016-06-28 2019-07-23 Sandisk Technologies Llc Three dimensional memory device containing multilayer wordline barrier films and method of making thereof
EP3420590B1 (en) 2016-06-28 2020-01-29 SanDisk Technologies LLC Offset backside contact via structures for a three-dimensional memory device
US9917093B2 (en) 2016-06-28 2018-03-13 Sandisk Technologies Llc Inter-plane offset in backside contact via structures for a three-dimensional memory device
US10103161B2 (en) 2016-06-28 2018-10-16 Sandisk Technologies Llc Offset backside contact via structures for a three-dimensional memory device
US10355139B2 (en) 2016-06-28 2019-07-16 Sandisk Technologies Llc Three-dimensional memory device with amorphous barrier layer and method of making thereof
US9978768B2 (en) 2016-06-29 2018-05-22 Sandisk Technologies Llc Method of making three-dimensional semiconductor memory device having laterally undulating memory films
US9576967B1 (en) 2016-06-30 2017-02-21 Sandisk Technologies Llc Method of suppressing epitaxial growth in support openings and three-dimensional memory device containing non-epitaxial support pillars in the support openings
US9613689B1 (en) 2016-07-08 2017-04-04 Sandisk Technologies Llc Self-selecting local bit line for a three-dimensional memory array
US9659866B1 (en) 2016-07-08 2017-05-23 Sandisk Technologies Llc Three-dimensional memory structures with low source line resistance
US10381372B2 (en) 2016-07-13 2019-08-13 Sandisk Technologies Llc Selective tungsten growth for word lines of a three-dimensional memory device
US10529620B2 (en) 2016-07-13 2020-01-07 Sandisk Technologies Llc Three-dimensional memory device containing word lines formed by selective tungsten growth on nucleation controlling surfaces and methods of manufacturing the same
US9748266B1 (en) 2016-07-20 2017-08-29 Sandisk Technologies Llc Three-dimensional memory device with select transistor having charge trapping gate dielectric layer and methods of making and operating thereof
US9748174B1 (en) 2016-07-20 2017-08-29 Sandisk Technologies Llc Three-dimensional memory device having multi-layer diffusion barrier stack and method of making thereof
US9716105B1 (en) 2016-08-02 2017-07-25 Sandisk Technologies Llc Three-dimensional memory device with different thickness insulating layers and method of making thereof
US9824966B1 (en) 2016-08-12 2017-11-21 Sandisk Technologies Llc Three-dimensional memory device containing a lateral source contact and method of making the same
US9754963B1 (en) 2016-08-22 2017-09-05 Sandisk Technologies Llc Multi-tier memory stack structure containing two types of support pillar structures
US9805805B1 (en) 2016-08-23 2017-10-31 Sandisk Technologies Llc Three-dimensional memory device with charge carrier injection wells for vertical channels and method of making and using thereof
US9905573B1 (en) 2016-08-30 2018-02-27 Sandisk Technologies Llc Three-dimensional memory device with angled word lines and method of making thereof
JP6777369B2 (ja) 2016-08-31 2020-10-28 マイクロン テクノロジー，インク． 強誘電体メモリを含み、強誘電体メモリを動作するための装置及び方法
EP3507807A4 (en) * 2016-08-31 2020-04-29 Micron Technology, Inc. DEVICES AND METHOD WITH AND FOR ACCESS TO ITEMS
KR102369776B1 (ko) 2016-08-31 2022-03-03 마이크론 테크놀로지, 인크. 강유전 메모리 셀
SG11201901211XA (en) 2016-08-31 2019-03-28 Micron Technology Inc Apparatuses and methods including ferroelectric memory and for accessing ferroelectric memory
US10050054B2 (en) 2016-10-05 2018-08-14 Sandisk Technologies Llc Three-dimensional memory device having drain select level isolation structure and method of making thereof
US11711928B2 (en) 2016-10-10 2023-07-25 Monolithic 3D Inc. 3D memory devices and structures with control circuits
US11329059B1 (en) 2016-10-10 2022-05-10 Monolithic 3D Inc. 3D memory devices and structures with thinned single crystal substrates
US11869591B2 (en) 2016-10-10 2024-01-09 Monolithic 3D Inc. 3D memory devices and structures with control circuits
US11930648B1 (en) 2016-10-10 2024-03-12 Monolithic 3D Inc. 3D memory devices and structures with metal layers
US11251149B2 (en) 2016-10-10 2022-02-15 Monolithic 3D Inc. 3D memory device and structure
US11812620B2 (en) 2016-10-10 2023-11-07 Monolithic 3D Inc. 3D DRAM memory devices and structures with control circuits
US9818801B1 (en) 2016-10-14 2017-11-14 Sandisk Technologies Llc Resistive three-dimensional memory device with heterostructure semiconductor local bit line and method of making thereof
US10014316B2 (en) 2016-10-18 2018-07-03 Sandisk Technologies Llc Three-dimensional memory device with leakage reducing support pillar structures and method of making thereof
US9806256B1 (en) 2016-10-21 2017-10-31 Sandisk Technologies Llc Resistive memory device having sidewall spacer electrode and method of making thereof
US9881929B1 (en) 2016-10-27 2018-01-30 Sandisk Technologies Llc Multi-tier memory stack structure containing non-overlapping support pillar structures and method of making thereof
US9929174B1 (en) 2016-10-28 2018-03-27 Sandisk Technologies Llc Three-dimensional memory device having non-uniform spacing among memory stack structures and method of making thereof
US10020363B2 (en) 2016-11-03 2018-07-10 Sandisk Technologies Llc Bulb-shaped memory stack structures for direct source contact in three-dimensional memory device
US9978766B1 (en) 2016-11-09 2018-05-22 Sandisk Technologies Llc Three-dimensional memory device with electrically isolated support pillar structures and method of making thereof
US9972640B1 (en) 2016-11-17 2018-05-15 Sandisk Technologies Llc Three-dimensional memory device with self-aligned drain side select gate electrodes and method of making thereof
US9972641B1 (en) * 2016-11-17 2018-05-15 Sandisk Technologies Llc Three-dimensional memory device having a multilevel drain select gate electrode and method of making thereof
US10083982B2 (en) 2016-11-17 2018-09-25 Sandisk Technologies Llc Three-dimensional memory device having select gate electrode that is thicker than word lines and method of making thereof
US10262945B2 (en) 2016-11-28 2019-04-16 Sandisk Technologies Llc Three-dimensional array device having a metal containing barrier and method of making thereof
US9991277B1 (en) 2016-11-28 2018-06-05 Sandisk Technologies Llc Three-dimensional memory device with discrete self-aligned charge storage elements and method of making thereof
US9876031B1 (en) 2016-11-30 2018-01-23 Sandisk Technologies Llc Three-dimensional memory device having passive devices at a buried source line level and method of making thereof
US10290803B2 (en) 2016-12-02 2019-05-14 Sandisk Technologies Llc Three-dimensional devices with wedge-shaped contact region and method of making thereof
US10853244B2 (en) 2016-12-07 2020-12-01 Sandisk Technologies Llc Randomly writable memory device and method of operating thereof
US10056399B2 (en) 2016-12-22 2018-08-21 Sandisk Technologies Llc Three-dimensional memory devices containing inter-tier dummy memory cells and methods of making the same
US10032908B1 (en) 2017-01-06 2018-07-24 Sandisk Technologies Llc Multi-gate vertical field effect transistor with channel strips laterally confined by gate dielectric layers, and method of making thereof
US10074666B2 (en) 2017-01-09 2018-09-11 Sandisk Technologies Llc Three-dimensional memory device with enhanced mechanical stability semiconductor pedestal and method of making thereof
US9853038B1 (en) 2017-01-20 2017-12-26 Sandisk Technologies Llc Three-dimensional memory device having integrated support and contact structures and method of making thereof
US9911790B1 (en) 2017-01-20 2018-03-06 Sandisk Technologies Llc Resistive RAM including air gaps between word lines and between vertical bit lines
JP2018117102A (ja) * 2017-01-20 2018-07-26 ソニーセミコンダクタソリューションズ株式会社 半導体装置
US9875929B1 (en) 2017-01-23 2018-01-23 Sandisk Technologies Llc Three-dimensional memory device with annular blocking dielectrics and discrete charge storage elements and method of making thereof
US10115735B2 (en) 2017-02-24 2018-10-30 Sandisk Technologies Llc Semiconductor device containing multilayer titanium nitride diffusion barrier and method of making thereof
US10192877B2 (en) 2017-03-07 2019-01-29 Sandisk Technologies Llc Three-dimensional memory device with level-shifted staircase structures and method of making thereof
US10256245B2 (en) 2017-03-10 2019-04-09 Sandisk Technologies Llc Three-dimensional memory device with short-free source select gate contact via structure and method of making the same
US10032489B1 (en) 2017-03-15 2018-07-24 Sandisk Technologies Llc Sensing amplifier to detect the memory cell current transition
US10192929B2 (en) 2017-03-24 2019-01-29 Sandisk Technologies Llc Three-dimensional memory devices having through-stack contact via structures and method of making thereof
US9922987B1 (en) 2017-03-24 2018-03-20 Sandisk Technologies Llc Three-dimensional memory device containing separately formed drain select transistors and method of making thereof
US9960180B1 (en) 2017-03-27 2018-05-01 Sandisk Technologies Llc Three-dimensional memory device with partially discrete charge storage regions and method of making thereof
US10050194B1 (en) 2017-04-04 2018-08-14 Sandisk Technologies Llc Resistive memory device including a lateral air gap around a memory element and method of making thereof
US9960181B1 (en) 2017-04-17 2018-05-01 Sandisk Technologies Llc Three-dimensional memory device having contact via structures in overlapped terrace region and method of making thereof
US10115632B1 (en) 2017-04-17 2018-10-30 Sandisk Technologies Llc Three-dimensional memory device having conductive support structures and method of making thereof
CN110520989B (zh) * 2017-05-08 2023-09-29 美光科技公司 存储器阵列
US10825815B2 (en) 2017-05-08 2020-11-03 Micron Technology, Inc. Memory arrays
US20180331117A1 (en) 2017-05-12 2018-11-15 Sandisk Technologies Llc Multilevel memory stack structure with tapered inter-tier joint region and methods of making thereof
US20180331118A1 (en) 2017-05-12 2018-11-15 Sandisk Technologies Llc Multi-layer barrier for cmos under array type memory device and method of making thereof
US10224372B2 (en) 2017-05-24 2019-03-05 Sandisk Technologies Llc Three-dimensional memory device with vertical bit lines and replacement word lines and method of making thereof
US9941299B1 (en) 2017-05-24 2018-04-10 Sandisk Technologies Llc Three-dimensional ferroelectric memory device and method of making thereof
US10319635B2 (en) 2017-05-25 2019-06-11 Sandisk Technologies Llc Interconnect structure containing a metal slilicide hydrogen diffusion barrier and method of making thereof
US10141331B1 (en) 2017-05-29 2018-11-27 Sandisk Technologies Llc Three-dimensional memory device containing support pillars underneath a retro-stepped dielectric material and method of making thereof
US10283566B2 (en) 2017-06-01 2019-05-07 Sandisk Technologies Llc Three-dimensional memory device with through-stack contact via structures and method of making thereof
US9953992B1 (en) 2017-06-01 2018-04-24 Sandisk Technologies Llc Mid-plane word line switch connection for CMOS under three-dimensional memory device and method of making thereof
US10340449B2 (en) 2017-06-01 2019-07-02 Sandisk Technologies Llc Resistive memory device containing carbon barrier and method of making thereof
US10381373B2 (en) 2017-06-16 2019-08-13 Sandisk Technologies Llc Three-dimensional memory device having a buried source line extending to scribe line and method of making thereof
US10115730B1 (en) 2017-06-19 2018-10-30 Sandisk Technologies Llc Three-dimensional memory device containing structurally reinforced pedestal channel portions and method of making thereof
US10224340B2 (en) 2017-06-19 2019-03-05 Sandisk Technologies Llc Three-dimensional memory device having discrete direct source strap contacts and method of making thereof
US10381364B2 (en) 2017-06-20 2019-08-13 Sandisk Technologies Llc Three-dimensional memory device including vertically offset drain select level layers and method of making thereof
US11180861B2 (en) 2017-06-20 2021-11-23 Sunrise Memory Corporation 3-dimensional NOR string arrays in segmented stacks
US10608011B2 (en) 2017-06-20 2020-03-31 Sunrise Memory Corporation 3-dimensional NOR memory array architecture and methods for fabrication thereof
US10608008B2 (en) 2017-06-20 2020-03-31 Sunrise Memory Corporation 3-dimensional nor strings with segmented shared source regions
US10692874B2 (en) 2017-06-20 2020-06-23 Sunrise Memory Corporation 3-dimensional NOR string arrays in segmented stacks
US10438964B2 (en) 2017-06-26 2019-10-08 Sandisk Technologies Llc Three-dimensional memory device having direct source contact and metal oxide blocking dielectric and method of making thereof
US10355012B2 (en) 2017-06-26 2019-07-16 Sandisk Technologies Llc Multi-tier three-dimensional memory device with stress compensation structures and method of making thereof
US10256272B2 (en) 2017-06-26 2019-04-09 Sandisk Technologies Llc Resistive memory device containing etch stop structures for vertical bit line formation and method of making thereof
US10079267B1 (en) 2017-06-26 2018-09-18 Sandisk Technologies Llc Memory device containing wrap gate vertical select transistors and method of making thereof
US10224240B1 (en) 2017-06-27 2019-03-05 Sandisk Technologies Llc Distortion reduction of memory openings in a multi-tier memory device through thermal cycle control
US10224373B2 (en) 2017-06-28 2019-03-05 Sandisk Technologies Llc Three-dimensional ReRAM memory device employing replacement word lines and methods of making the same
US10354728B2 (en) 2017-06-28 2019-07-16 Sandisk Technologies Llc Write verification and resistive state determination based on cell turn-on characteristics for resistive random access memory
US10290645B2 (en) 2017-06-30 2019-05-14 Sandisk Technologies Llc Three-dimensional memory device containing hydrogen diffusion barrier layer for CMOS under array architecture and method of making thereof
US10867675B2 (en) 2017-07-13 2020-12-15 Micron Technology, Inc. Apparatuses and methods for memory including ferroelectric memory cells and dielectric memory cells
US11037943B2 (en) 2017-07-18 2021-06-15 Sandisk Technologies Llc Three-dimensional memory device having on-pitch drain select gate electrodes and method of making the same
WO2019018050A1 (en) 2017-07-18 2019-01-24 Sandisk Technologies Llc THREE-DIMENSIONAL MEMORY DEVICE WITH SELF-ALIGNED DRAIN SELECTION GRID ELECTRODES AND METHOD FOR MANUFACTURING THE SAME
US11552094B2 (en) 2017-07-18 2023-01-10 Sandisk Technologies Llc Three-dimensional memory device having on-pitch drain select gate electrodes and method of making the same
US10403639B2 (en) 2017-07-18 2019-09-03 Sandisk Technologies Llc Three-dimensional memory device having on-pitch drain select gate electrodes and method of making the same
US10236300B2 (en) 2017-07-25 2019-03-19 Sandisk Technologies Llc On-pitch drain select level isolation structure for three-dimensional memory device and method of making the same
US11043499B2 (en) 2017-07-27 2021-06-22 Micron Technology, Inc. Memory arrays comprising memory cells
US10199359B1 (en) 2017-08-04 2019-02-05 Sandisk Technologies Llc Three-dimensional memory device employing direct source contact and hole current detection and method of making the same
US20190051703A1 (en) 2017-08-09 2019-02-14 Sandisk Technologies Llc Two-dimensional array of surround gate vertical field effect transistors and method of making thereof
US10103169B1 (en) 2017-08-21 2018-10-16 Sandisk Technologies Llc Method of making a three-dimensional memory device using a multi-step hot phosphoric acid wet etch process
US10381229B2 (en) 2017-08-24 2019-08-13 Sandisk Technologies Llc Three-dimensional memory device with straddling drain select electrode lines and method of making thereof
US10283710B2 (en) 2017-09-05 2019-05-07 Sandisk Technologies Llc Resistive random access memory device containing replacement word lines and method of making thereof
WO2019055073A1 (en) 2017-09-14 2019-03-21 Sandisk Technologies Llc THREE-DIMENSIONAL MEMORY DEVICE CONTAINING ANNULAR ENGRAVING STOP SPACER AND METHOD FOR MANUFACTURING THE SAME
US10192878B1 (en) 2017-09-14 2019-01-29 Sandisk Technologies Llc Three-dimensional memory device with self-aligned multi-level drain select gate electrodes
US10290681B2 (en) 2017-09-21 2019-05-14 Sandisk Technologies Llc Array of hole-type surround gate vertical field effect transistors and method of making thereof
US10840205B2 (en) 2017-09-24 2020-11-17 Invensas Bonding Technologies, Inc. Chemical mechanical polishing for hybrid bonding
US10256402B1 (en) 2017-09-25 2019-04-09 Sandisk Technologies Llc ReRAM read state verification based on cell turn-on characteristics
US10290647B2 (en) 2017-09-26 2019-05-14 Sandisk Technologies Llc Three-dimensional memory device containing structurally reinforced pedestal channel portions and method of making the same
US10115895B1 (en) 2017-09-26 2018-10-30 Sandisk Technologies Llc Vertical field effect transisitors having a rectangular surround gate and method of making the same
US10453798B2 (en) 2017-09-27 2019-10-22 Sandisk Technologies Llc Three-dimensional memory device with gated contact via structures and method of making thereof
US10707314B2 (en) 2017-09-29 2020-07-07 Sandisk Technologies Llc Surround gate vertical field effect transistors including tubular and strip electrodes and method of making the same
US10115459B1 (en) 2017-09-29 2018-10-30 Sandisk Technologies Llc Multiple liner interconnects for three dimensional memory devices and method of making thereof
US10199326B1 (en) 2017-10-05 2019-02-05 Sandisk Technologies Llc Three-dimensional memory device with driver circuitry on the backside of a substrate and method of making thereof
US10083877B1 (en) 2017-10-25 2018-09-25 Sandisk Technologies Llc Vertical field effect transistors including two-tier select gates and method of making the same
US10283513B1 (en) 2017-11-06 2019-05-07 Sandisk Technologies Llc Three-dimensional memory device with annular blocking dielectrics and method of making thereof
US10629606B2 (en) 2017-11-07 2020-04-21 Sandisk Technologies Llc Three-dimensional memory device having level-shifted staircases and method of making thereof
US10461163B2 (en) 2017-11-15 2019-10-29 Sandisk Technologies Llc Three-dimensional memory device with thickened word lines in terrace region and method of making thereof
KR102235246B1 (ko) 2017-11-15 2021-04-02 샌디스크 테크놀로지스 엘엘씨 테라스 영역 내의 두꺼운 워드 라인들을 갖는 3차원 메모리 디바이스 및 그 제조 방법
US10453854B2 (en) 2017-11-15 2019-10-22 Sandisk Technologies Llc Three-dimensional memory device with thickened word lines in terrace region
US10217746B1 (en) 2017-11-30 2019-02-26 Sandisk Technologies Llc Three-dimensional memory device having L-shaped word lines and a support structure and methods of making the same
US10211215B1 (en) 2017-11-30 2019-02-19 Sandisk Technologies Llc Three-dimensional memory device containing word lines having vertical protrusion regions and methods of making the same
US10181442B1 (en) 2017-11-30 2019-01-15 Sandisk Technologies Llc Three-dimensional memory device having L-shaped word lines and methods of making the same
US10229931B1 (en) 2017-12-05 2019-03-12 Sandisk Technologies Llc Three-dimensional memory device containing fluorine-free tungsten—word lines and methods of manufacturing the same
US10297312B1 (en) 2017-12-06 2019-05-21 Sandisk Technologies Llc Resistive memory cell programmed by metal alloy formation and method of operating thereof
US10290648B1 (en) 2017-12-07 2019-05-14 Sandisk Technologies Llc Three-dimensional memory device containing air gap rails and method of making thereof
US10916556B1 (en) 2017-12-12 2021-02-09 Sandisk Technologies Llc Three-dimensional memory device using a buried source line with a thin semiconductor oxide tunneling layer
US10256252B1 (en) 2017-12-13 2019-04-09 Sandisk Technologies Llc Three-dimensional memory device containing structurally reinforced pedestal channel portions and methods of making the same
US10347647B1 (en) 2017-12-21 2019-07-09 Sandisk Technologies Llc Three-dimensional memory device containing multi-threshold-voltage drain select gates and method of making the same
KR102457732B1 (ko) 2017-12-28 2022-10-21 선라이즈 메모리 코포레이션 초미세 피치를 갖는 3차원 nor 메모리 어레이: 장치 및 방법
US10354956B1 (en) 2018-01-05 2019-07-16 Sandisk Technologies Llc Three-dimensional memory device containing hydrogen diffusion barrier structures for CMOS under array architecture and method of making the same
US10373969B2 (en) 2018-01-09 2019-08-06 Sandisk Technologies Llc Three-dimensional memory device including partially surrounding select gates and fringe field assisted programming thereof
US10559588B2 (en) 2018-01-12 2020-02-11 Sandisk Technologies Llc Three-dimensional flat inverse NAND memory device and method of making the same
US10283493B1 (en) 2018-01-17 2019-05-07 Sandisk Technologies Llc Three-dimensional memory device containing bonded memory die and peripheral logic die and method of making thereof
US10510738B2 (en) 2018-01-17 2019-12-17 Sandisk Technologies Llc Three-dimensional memory device having support-die-assisted source power distribution and method of making thereof
US10546870B2 (en) 2018-01-18 2020-01-28 Sandisk Technologies Llc Three-dimensional memory device containing offset column stairs and method of making the same
US10622369B2 (en) 2018-01-22 2020-04-14 Sandisk Technologies Llc Three-dimensional memory device including contact via structures that extend through word lines and method of making the same
US10290643B1 (en) 2018-01-22 2019-05-14 Sandisk Technologies Llc Three-dimensional memory device containing floating gate select transistor
US10475812B2 (en) 2018-02-02 2019-11-12 Sunrise Memory Corporation Three-dimensional vertical NOR flash thin-film transistor strings
US10290650B1 (en) 2018-02-05 2019-05-14 Sandisk Technologies Llc Self-aligned tubular electrode portions inside memory openings for drain select gate electrodes in a three-dimensional memory device
US10256247B1 (en) 2018-02-08 2019-04-09 Sandisk Technologies Llc Three-dimensional memory device with silicided word lines, air gap layers and discrete charge storage elements, and method of making thereof
US10720445B1 (en) 2018-02-08 2020-07-21 Sandisk Technologies Llc Three-dimensional memory device having nitrided direct source strap contacts and method of making thereof
US10700028B2 (en) 2018-02-09 2020-06-30 Sandisk Technologies Llc Vertical chip interposer and method of making a chip assembly containing the vertical chip interposer
US10903232B2 (en) 2018-02-14 2021-01-26 Sandisk Technologies Llc Three-dimensional memory devices containing memory stack structures with laterally separated charge storage elements and method of making thereof
US10727248B2 (en) 2018-02-15 2020-07-28 Sandisk Technologies Llc Three-dimensional memory device containing through-memory-level contact via structures
US10971507B2 (en) 2018-02-15 2021-04-06 Sandisk Technologies Llc Three-dimensional memory device containing through-memory-level contact via structures
US10903230B2 (en) 2018-02-15 2021-01-26 Sandisk Technologies Llc Three-dimensional memory device containing through-memory-level contact via structures and method of making the same
US10304852B1 (en) 2018-02-15 2019-05-28 Sandisk Technologies Llc Three-dimensional memory device containing through-memory-level contact via structures
US10553537B2 (en) 2018-02-17 2020-02-04 Sandisk Technologies Llc Interconnects containing serpentine line structures for three-dimensional memory devices and methods of making the same
US10192784B1 (en) 2018-02-22 2019-01-29 Sandisk Technologies Llc Three-dimensional memory device containing self-aligned contact via structures and methods of manufacturing the same
US10381450B1 (en) 2018-02-27 2019-08-13 Sandisk Technologies Llc Three-dimensional memory device with self-aligned drain select level isolation structures and method of making thereof
US10319680B1 (en) 2018-03-01 2019-06-11 Sandisk Technologies Llc Metal contact via structure surrounded by an air gap and method of making thereof
US10600802B2 (en) 2018-03-07 2020-03-24 Sandisk Technologies Llc Multi-tier memory device with rounded top part of joint structure and methods of making the same
US10209636B1 (en) 2018-03-07 2019-02-19 Sandisk Technologies Llc Exposure focus leveling method using region-differentiated focus scan patterns
US10388666B1 (en) 2018-03-08 2019-08-20 Sandisk Technologies Llc Concurrent formation of memory openings and contact openings for a three-dimensional memory device
US11217532B2 (en) 2018-03-14 2022-01-04 Sandisk Technologies Llc Three-dimensional memory device containing compositionally graded word line diffusion barrier layer for and methods of forming the same
US10354980B1 (en) 2018-03-22 2019-07-16 Sandisk Technologies Llc Three-dimensional memory device containing bonded chip assembly with through-substrate via structures and method of making the same
US10115681B1 (en) 2018-03-22 2018-10-30 Sandisk Technologies Llc Compact three-dimensional memory device having a seal ring and methods of manufacturing the same
US10354987B1 (en) 2018-03-22 2019-07-16 Sandisk Technologies Llc Three-dimensional memory device containing bonded chip assembly with through-substrate via structures and method of making the same
US10355017B1 (en) 2018-03-23 2019-07-16 Sandisk Technologies Llc CMOS devices containing asymmetric contact via structures and method of making the same
US10256167B1 (en) 2018-03-23 2019-04-09 Sandisk Technologies Llc Hydrogen diffusion barrier structures for CMOS devices and method of making the same
US10770459B2 (en) 2018-03-23 2020-09-08 Sandisk Technologies Llc CMOS devices containing asymmetric contact via structures
US10269820B1 (en) 2018-04-03 2019-04-23 Sandisk Technologies Llc Three-dimensional memory device containing different pedestal width support pillar structures and method of making the same
US11056348B2 (en) 2018-04-05 2021-07-06 Invensas Bonding Technologies, Inc. Bonding surfaces for microelectronics
US10468413B2 (en) 2018-04-06 2019-11-05 Sandisk Technologies Llc Method for forming hydrogen-passivated semiconductor channels in a three-dimensional memory device
US10804284B2 (en) 2018-04-11 2020-10-13 Sandisk Technologies Llc Three-dimensional memory device containing bidirectional taper staircases and methods of making the same
US10756186B2 (en) 2018-04-12 2020-08-25 Sandisk Technologies Llc Three-dimensional memory device including germanium-containing vertical channels and method of making the same
US10381322B1 (en) 2018-04-23 2019-08-13 Sandisk Technologies Llc Three-dimensional memory device containing self-aligned interlocking bonded structure and method of making the same
US10566059B2 (en) 2018-04-30 2020-02-18 Sandisk Technologies Llc Three dimensional NAND memory device with drain select gate electrode shared between multiple strings
US10615172B2 (en) 2018-05-11 2020-04-07 Sandisk Technologies Llc Three-dimensional memory device having double-width staircase regions and methods of manufacturing the same
US10347654B1 (en) 2018-05-11 2019-07-09 Sandisk Technologies Llc Three-dimensional memory device employing discrete backside openings and methods of making the same
US10381362B1 (en) 2018-05-15 2019-08-13 Sandisk Technologies Llc Three-dimensional memory device including inverted memory stack structures and methods of making the same
US10515897B2 (en) 2018-05-17 2019-12-24 Sandisk Technologies Llc Three-dimensional memory device containing hydrogen diffusion blocking structures and method of making the same
US10515907B2 (en) 2018-05-17 2019-12-24 Sandisk Technologies Llc Three-dimensional memory device containing hydrogen diffusion blocking structures and method of making the same
US10559582B2 (en) 2018-06-04 2020-02-11 Sandisk Technologies Llc Three-dimensional memory device containing source contact to bottom of vertical channels and method of making the same
US11749645B2 (en) 2018-06-13 2023-09-05 Adeia Semiconductor Bonding Technologies Inc. TSV as pad
US11393779B2 (en) 2018-06-13 2022-07-19 Invensas Bonding Technologies, Inc. Large metal pads over TSV
US20190043868A1 (en) * 2018-06-18 2019-02-07 Intel Corporation Three-dimensional (3d) memory with control circuitry and array in separately processed and bonded wafers
US10651153B2 (en) 2018-06-18 2020-05-12 Intel Corporation Three-dimensional (3D) memory with shared control circuitry using wafer-to-wafer bonding
US10658377B2 (en) 2018-06-27 2020-05-19 Sandisk Technologies Llc Three-dimensional memory device with reduced etch damage to memory films and methods of making the same
US10998331B2 (en) 2018-06-27 2021-05-04 Sandisk Technologies Llc Three-dimensional inverse flat NAND memory device containing partially discrete charge storage elements and methods of making the same
US10600800B2 (en) 2018-06-27 2020-03-24 Sandisk Technologies Llc Three-dimensional memory device containing multilevel drain select gate isolation and methods of making the same
US10763271B2 (en) 2018-06-27 2020-09-01 Sandisk Technologies Llc Three-dimensional memory device containing aluminum-silicon word lines and methods of manufacturing the same
US11164883B2 (en) 2018-06-27 2021-11-02 Sandisk Technologies Llc Three-dimensional memory device containing aluminum-silicon word lines and methods of manufacturing the same
US10475804B1 (en) 2018-06-27 2019-11-12 Sandisk Technologies Llc Three-dimensional memory device containing multilevel drain select gate isolation and methods of making the same
CN111373534B (zh) 2018-06-27 2023-09-01 桑迪士克科技有限责任公司 包含多层级漏极选择栅极隔离的三维存储器装置及其制造方法
US10381434B1 (en) 2018-06-28 2019-08-13 Sandisk Technologies Llc Support pillar structures for leakage reduction in a three-dimensional memory device
US10700086B2 (en) 2018-06-28 2020-06-30 Sandisk Technologies Llc Three-dimensional flat NAND memory device having high mobility channels and methods of making the same
US10475879B1 (en) 2018-06-28 2019-11-12 Sandisk Technologies Llc Support pillar structures for leakage reduction in a three-dimensional memory device and methods of making the same
US10854627B1 (en) 2018-06-29 2020-12-01 Sandisk Technologies Llc Three-dimensional memory device containing a capped insulating source line core and method of making the same
CN112567516A (zh) 2018-07-12 2021-03-26 日升存储公司 三维nor存储器阵列的制造方法
US11751391B2 (en) 2018-07-12 2023-09-05 Sunrise Memory Corporation Methods for fabricating a 3-dimensional memory structure of nor memory strings
US10861869B2 (en) 2018-07-16 2020-12-08 Sandisk Technologies Llc Three-dimensional memory device having a slimmed aluminum oxide blocking dielectric and method of making same
US11450669B2 (en) 2018-07-24 2022-09-20 Intel Corporation Stacked thin-film transistor based embedded dynamic random-access memory
US11121149B2 (en) 2018-08-08 2021-09-14 Sandisk Technologies Llc Three-dimensional memory device containing direct contact drain-select-level semiconductor channel portions and methods of making the same
US10840259B2 (en) 2018-08-13 2020-11-17 Sandisk Technologies Llc Three-dimensional memory device including liner free molybdenum word lines and methods of making the same
US10741576B2 (en) 2018-08-20 2020-08-11 Sandisk Technologies Llc Three-dimensional memory device containing drain-select-level air gap and methods of making the same
US10707228B2 (en) 2018-08-21 2020-07-07 Sandisk Technologies Llc Three-dimensional memory device having bonding structures connected to bit lines and methods of making the same
US11011494B2 (en) 2018-08-31 2021-05-18 Invensas Bonding Technologies, Inc. Layer structures for making direct metal-to-metal bonds at low temperatures in microelectronics
KR20210046084A (ko) * 2018-09-20 2021-04-27 마이크론 테크놀로지, 인크. 적층형 메모리 라우팅 기술
US10692884B2 (en) 2018-09-21 2020-06-23 Sandisk Technologies Llc Three-dimensional memory device including bottle-shaped memory stack structures and drain-select gate electrodes having cylindrical portions
TWI713195B (zh) * 2018-09-24 2020-12-11 美商森恩萊斯記憶體公司 三維ｎｏｒ記憶電路製程中之晶圓接合及其形成之積體電路
US10622367B1 (en) 2018-09-26 2020-04-14 Sandisk Technologies Llc Three-dimensional memory device including three-dimensional bit line discharge transistors and method of making the same
US11018151B2 (en) 2018-09-26 2021-05-25 Sandisk Technologies Llc Three-dimensional flat NAND memory device including wavy word lines and method of making the same
US10553599B1 (en) 2018-09-26 2020-02-04 Sandisk Technologies Llc Three-dimensional memory device containing drain select isolation structures and on-pitch channels and methods of making the same without an etch stop layer
US10985171B2 (en) 2018-09-26 2021-04-20 Sandisk Technologies Llc Three-dimensional flat NAND memory device including wavy word lines and method of making the same
US10957706B2 (en) 2018-10-17 2021-03-23 Sandisk Technologies Llc Multi-tier three-dimensional memory device with dielectric support pillars and methods for making the same
US11158573B2 (en) 2018-10-22 2021-10-26 Invensas Bonding Technologies, Inc. Interconnect structures
US10607938B1 (en) 2018-10-26 2020-03-31 International Business Machines Corporation Power distribution networks for monolithic three-dimensional semiconductor integrated circuit devices
US10651196B1 (en) 2018-11-08 2020-05-12 Sandisk Technologies Llc Three-dimensional multilevel device containing seamless unidirectional metal layer fill and method of making same
US10629613B1 (en) 2018-11-20 2020-04-21 Sandisk Technologies Llc Three-dimensional memory device having vertical semiconductor channels including source-side boron-doped pockets and methods of making the same
US10868025B2 (en) 2018-11-26 2020-12-15 Sandisk Technologies Llc Three-dimensional memory device including replacement crystalline channels and methods of making the same
US10756106B2 (en) 2018-11-28 2020-08-25 Sandisk Technologies Llc Three-dimensional memory device with locally modulated threshold voltages at drain select levels and methods of making the same
US10950618B2 (en) 2018-11-29 2021-03-16 Micron Technology, Inc. Memory arrays
US10629675B1 (en) 2018-12-05 2020-04-21 Sandisk Technologies Llc Three-dimensional memory device containing capacitor pillars and methods of making the same
CN113169041B (zh) 2018-12-07 2024-04-09 日升存储公司 形成多层垂直nor型存储器串阵列的方法
US10854619B2 (en) 2018-12-07 2020-12-01 Sandisk Technologies Llc Three-dimensional memory device containing bit line switches
US10734080B2 (en) 2018-12-07 2020-08-04 Sandisk Technologies Llc Three-dimensional memory device containing bit line switches
US10741579B2 (en) 2018-12-11 2020-08-11 Sandisk Technologies Llc Three-dimensional memory device including different height memory stack structures and methods of making the same
EP3711091A4 (en) 2018-12-17 2021-11-24 SanDisk Technologies LLC THREE-DIMENSIONAL STORAGE DEVICE WITH TENSIONED VERTICAL SEMICONDUCTOR CHANNELS AND PROCESS FOR THEIR PRODUCTION
US10797061B2 (en) 2018-12-17 2020-10-06 Sandisk Technologies Llc Three-dimensional memory device having stressed vertical semiconductor channels and method of making the same
US11721727B2 (en) 2018-12-17 2023-08-08 Sandisk Technologies Llc Three-dimensional memory device including a silicon-germanium source contact layer and method of making the same
US10797060B2 (en) 2018-12-17 2020-10-06 Sandisk Technologies Llc Three-dimensional memory device having stressed vertical semiconductor channels and method of making the same
US11101284B2 (en) 2018-12-18 2021-08-24 Sandisk Technologies Llc Three-dimensional memory device containing etch stop structures and methods of making the same
US10957705B2 (en) 2018-12-24 2021-03-23 Sandisk Technologies Llc Three-dimensional memory devices having a multi-stack bonded structure using a logic die and multiple three-dimensional memory dies and method of making the same
US10665580B1 (en) * 2019-01-08 2020-05-26 Sandisk Technologies Llc Bonded structure including a performance-optimized support chip and a stress-optimized three-dimensional memory chip and method for making the same
CN111430303A (zh) 2019-01-09 2020-07-17 桑迪士克科技有限责任公司 单一化半导体裸芯的方法以及由其形成的单一化的裸芯
WO2020142989A1 (en) 2019-01-10 2020-07-16 Yangtze Memory Technologies Co., Ltd. Structures and methods for reducing stress in three-dimensional memory device
US10854513B2 (en) 2019-01-16 2020-12-01 Sandisk Technologies Llc Cavity-disrupting backside trench fill structures for a three-dimensional memory device and method of making the same
US10957680B2 (en) 2019-01-16 2021-03-23 Sandisk Technologies Llc Semiconductor die stacking using vertical interconnection by through-dielectric via structures and methods for making the same
US10923502B2 (en) 2019-01-16 2021-02-16 Sandisk Technologies Llc Three-dimensional ferroelectric memory devices including a backside gate electrode and methods of making same
US10665607B1 (en) 2019-01-18 2020-05-26 Sandisk Technologies Llc Three-dimensional memory device including a deformation-resistant edge seal structure and methods for making the same
US10748894B2 (en) 2019-01-18 2020-08-18 Sandisk Technologies Llc Three-dimensional memory device containing bond pad-based power supply network for a source line and methods of making the same
US10985172B2 (en) 2019-01-18 2021-04-20 Sandisk Technologies Llc Three-dimensional memory device with mobility-enhanced vertical channels and methods of forming the same
US10840260B2 (en) 2019-01-18 2020-11-17 Sandisk Technologies Llc Through-array conductive via structures for a three-dimensional memory device and methods of making the same
US10665581B1 (en) 2019-01-23 2020-05-26 Sandisk Technologies Llc Three-dimensional semiconductor chip containing memory die bonded to both sides of a support die and methods of making the same
US10886366B2 (en) 2019-01-25 2021-01-05 Sandisk Technologies Llc Semiconductor structures for peripheral circuitry having hydrogen diffusion barriers and method of making the same
US10727215B1 (en) 2019-01-30 2020-07-28 Sandisk Technologies Llc Three-dimensional memory device with logic signal routing through a memory die and methods of making the same
JP7425069B2 (ja) * 2019-01-30 2024-01-30 サンライズ メモリー コーポレイション 基板接合を用いた高帯域幅・大容量メモリ組み込み型電子デバイス
US10847408B2 (en) 2019-01-31 2020-11-24 Sandisk Technologies Llc Warpage-compensated bonded structure including a support chip and a three-dimensional memory chip
US11114406B2 (en) 2019-01-31 2021-09-07 Sandisk Technologies Llc Warpage-compensated bonded structure including a support chip and a three-dimensional memory chip
US10943917B2 (en) 2019-02-05 2021-03-09 Sandisk Technologies Llc Three-dimensional memory device with drain-select-level isolation structures and method of making the same
US10748927B1 (en) 2019-02-05 2020-08-18 Sandisk Technologies Llc Three-dimensional memory device with drain-select-level isolation structures and method of making the same
US10685978B1 (en) 2019-02-05 2020-06-16 Sandisk Technologies Llc Three-dimensional memory device with drain-select-level isolation structures and method of making the same
US10748925B1 (en) 2019-02-05 2020-08-18 Sandisk Technologies Llc Three-dimensional memory device containing channels with laterally pegged dielectric cores
US10964715B2 (en) 2019-02-05 2021-03-30 Sandisk Technologies Llc Three-dimensional memory device containing channels with laterally pegged dielectric cores
US10903222B2 (en) 2019-02-05 2021-01-26 Sandisk Technologies Llc Three-dimensional memory device containing a carbon-doped source contact layer and methods for making the same
US10685979B1 (en) 2019-02-05 2020-06-16 Sandisk Technologies Llc Three-dimensional memory device with drain-select-level isolation structures and method of making the same
US10811058B2 (en) 2019-02-06 2020-10-20 Sandisk Technologies Llc Bonded assembly containing memory die bonded to integrated peripheral and system die and methods for making the same
US10804282B2 (en) 2019-02-11 2020-10-13 Sandisk Technologies Llc Three-dimensional memory devices using carbon-doped aluminum oxide backside blocking dielectric layer for etch resistivity enhancement and methods of making the same
CN113424319A (zh) 2019-02-11 2021-09-21 日升存储公司 垂直薄膜晶体管以及作为用于三维存储器阵列的位线连接器的应用
US10700089B1 (en) 2019-02-12 2020-06-30 Sandisk Technologies Llc Three-dimensional memory device including locally thickened electrically conductive layers and methods of manufacturing the same
US11508711B2 (en) 2019-02-13 2022-11-22 Sandisk Technologies Llc Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layer
US11195781B2 (en) 2019-02-13 2021-12-07 Sandisk Technologies Llc Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layer
US11355486B2 (en) 2019-02-13 2022-06-07 Sandisk Technologies Llc Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layer
US11201107B2 (en) 2019-02-13 2021-12-14 Sandisk Technologies Llc Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layer
US10629616B1 (en) 2019-02-13 2020-04-21 Sandisk Technologies Llc Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layer
US10741535B1 (en) 2019-02-14 2020-08-11 Sandisk Technologies Llc Bonded assembly containing multiple memory dies sharing peripheral circuitry on a support die and methods for making the same
US10734400B1 (en) 2019-02-18 2020-08-04 Sandisk Technologies Llc Three-dimensional memory device including bit lines between memory elements and an underlying peripheral circuit and methods of making the same
US10804202B2 (en) 2019-02-18 2020-10-13 Sandisk Technologies Llc Bonded assembly including a semiconductor-on-insulator die and methods for making the same
US10700078B1 (en) 2019-02-18 2020-06-30 Sandisk Technologies Llc Three-dimensional flat NAND memory device having curved memory elements and methods of making the same
US10700090B1 (en) 2019-02-18 2020-06-30 Sandisk Technologies Llc Three-dimensional flat NAND memory device having curved memory elements and methods of making the same
US10672780B1 (en) 2019-02-25 2020-06-02 Sandisk Technologies Llc Three-dimensional memory device having dual configuration support pillar structures and methods for making the same
US10879260B2 (en) 2019-02-28 2020-12-29 Sandisk Technologies Llc Bonded assembly of a support die and plural memory dies containing laterally shifted vertical interconnections and methods for making the same
US11424231B2 (en) 2019-03-01 2022-08-23 Sandisk Technologies Llc Three-dimensional memory device having an epitaxial vertical semiconductor channel and method for making the same
US11239253B2 (en) 2019-03-01 2022-02-01 Sandisk Technologies Llc Three-dimensional memory device having an epitaxial vertical semiconductor channel and method for making the same
US11398451B2 (en) * 2019-03-01 2022-07-26 Sandisk Technologies Llc Methods for reusing substrates during manufacture of a bonded assembly including a logic die and a memory die
US11088252B2 (en) 2019-03-04 2021-08-10 Sandisk Technologies Llc Three-dimensional memory device with a silicon carbon nitride interfacial layer in a charge storage layer and methods of making the same
US10985169B2 (en) 2019-03-04 2021-04-20 Sandisk Technologies Llc Three-dimensional device with bonded structures including a support die and methods of making the same
US10833101B2 (en) 2019-03-04 2020-11-10 Sandisk Technologies Llc Three-dimensional memory device with horizontal silicon channels and method of making the same
US10714497B1 (en) 2019-03-04 2020-07-14 Sandisk Technologies Llc Three-dimensional device with bonded structures including a support die and methods of making the same
US11069703B2 (en) 2019-03-04 2021-07-20 Sandisk Technologies Llc Three-dimensional device with bonded structures including a support die and methods of making the same
US11127655B2 (en) 2019-03-07 2021-09-21 Sandisk Technologies Llc Memory die containing through-memory-level via structure and methods for making the same
US11171150B2 (en) 2019-03-07 2021-11-09 Sandisk Technologies Llc Three-dimensional memory device containing a channel connection strap and method for making the same
US10937800B2 (en) 2019-03-13 2021-03-02 Sandisk Technologies Llc Three-dimensional memory device with on-axis self-aligned drain-select-level isolation structure and methods of manufacturing the same
US10777575B1 (en) 2019-03-22 2020-09-15 Sandisk Technologies Llc Three-dimensional memory device with self-aligned vertical conductive strips having a gate-all-around configuration and method of making the same
US10937801B2 (en) 2019-03-22 2021-03-02 Sandisk Technologies Llc Three-dimensional memory device containing a polygonal lattice of support pillar structures and contact via structures and methods of manufacturing the same
US10847524B2 (en) 2019-03-25 2020-11-24 Sandisk Technologies Llc Three-dimensional memory device having double-width staircase regions and methods of manufacturing the same
US10879262B2 (en) 2019-03-27 2020-12-29 Sandisk Technologies Llc Three-dimensional memory device containing eye-shaped contact via structures located in laterally-undulating trenches and method of making the same
US10985176B2 (en) 2019-03-27 2021-04-20 Sandisk Technologies Llc Three-dimensional memory device containing eye-shaped contact via structures located in laterally-undulating trenches and method of making the same
US10804197B1 (en) 2019-03-28 2020-10-13 Sandisk Technologies Llc Memory die containing stress reducing backside contact via structures and method of making the same
US10658381B1 (en) 2019-03-28 2020-05-19 Sandisk Technologies Llc Memory die having wafer warpage reduction through stress balancing employing rotated three-dimensional memory arrays and method of making the same
US10854629B2 (en) 2019-03-28 2020-12-01 Sandisk Technologies Llc Three-dimensional memory device containing asymmetric, different size support pillars and method for making the same
US11107901B2 (en) 2019-04-03 2021-08-31 Sandisk Technologies Llc Charge storage memory device including ferroelectric layer between control gate electrode layers and methods of making the same
US11158652B1 (en) 2019-04-08 2021-10-26 Monolithic 3D Inc. 3D memory semiconductor devices and structures
US11763864B2 (en) 2019-04-08 2023-09-19 Monolithic 3D Inc. 3D memory semiconductor devices and structures with bit-line pillars
US11296106B2 (en) 2019-04-08 2022-04-05 Monolithic 3D Inc. 3D memory semiconductor devices and structures
US10892016B1 (en) 2019-04-08 2021-01-12 Monolithic 3D Inc. 3D memory semiconductor devices and structures
US11018156B2 (en) 2019-04-08 2021-05-25 Monolithic 3D Inc. 3D memory semiconductor devices and structures
US10756110B1 (en) 2019-04-10 2020-08-25 Sandisk Technologies Llc Method of forming seamless drain-select-level electrodes for a three-dimensional memory device and structures formed by the same
JP7331119B2 (ja) * 2019-04-15 2023-08-22 長江存儲科技有限責任公司 複数の機能性チップを伴う三次元ｎａｎｄメモリデバイスの集積
US10797062B1 (en) 2019-04-16 2020-10-06 Sandisk Technologies Llc Bonded die assembly using a face-to-back oxide bonding and methods for making the same
US11004773B2 (en) 2019-04-23 2021-05-11 Sandisk Technologies Llc Porous barrier layer for improving reliability of through-substrate via structures and methods of forming the same
US10923498B2 (en) 2019-04-25 2021-02-16 Sandisk Technologies Llc Three-dimensional memory device containing direct source contact structure and methods for making the same
CN110537260B (zh) * 2019-04-30 2021-08-03 长江存储科技有限责任公司 具有闪速存储器控制器的键合的存储设备及其制造和操作方法
CN110546762A (zh) * 2019-04-30 2019-12-06 长江存储科技有限责任公司 键合的统一半导体芯片及其制造和操作方法
US10872899B2 (en) 2019-05-07 2020-12-22 Sandisk Technologies Llc Three-dimensional memory device including signal and power connection lines extending through dielectric regions and methods of making the same
US10861873B2 (en) 2019-05-07 2020-12-08 Sandisk Technologies Llc Three-dimensional memory device including signal and power connection lines extending through dielectric regions and methods of making the same
US10804291B1 (en) 2019-05-09 2020-10-13 Sandisk Technologies Llc Three-dimensional memory device using epitaxial semiconductor channels and a buried source line and method of making the same
US10727216B1 (en) 2019-05-10 2020-07-28 Sandisk Technologies Llc Method for removing a bulk substrate from a bonded assembly of wafers
US11469251B2 (en) 2019-05-15 2022-10-11 Sandisk Technologies Llc Memory device using a multilayer ferroelectric stack and method of forming the same
US10727276B1 (en) 2019-05-24 2020-07-28 Sandisk Technologies Llc Three-dimensional NAND memory device containing two terminal selector and methods of using and making thereof
US11244983B2 (en) * 2019-06-25 2022-02-08 Taiwan Semiconductor Manufacturing Co., Ltd. MRAM memory cell layout for minimizing bitcell area
US11037908B2 (en) 2019-07-25 2021-06-15 Sandisk Technologies Llc Bonded die assembly containing partially filled through-substrate via structures and methods for making the same
US10991705B2 (en) 2019-07-30 2021-04-27 Sandisk Technologies Llc Three-dimensional memory device having enhanced contact between polycrystalline channel and epitaxial pedestal structure and method of making the same
US11024645B2 (en) 2019-07-30 2021-06-01 Sandisk Technologies Llc Three-dimensional memory device containing a silicon nitride ring in an opening in a memory film and method of making the same
US10991718B2 (en) 2019-07-30 2021-04-27 Sandisk Technologies Llc Three-dimensional memory device containing a vertical semiconductor channel containing a connection strap and method of making the same
US10991706B2 (en) 2019-07-30 2021-04-27 Sandisk Technologies Llc Three-dimensional memory device having enhanced contact between polycrystalline channel and epitaxial pedestal structure and method of making the same
US11239254B2 (en) 2019-08-02 2022-02-01 Sandisk Technologies Llc Three-dimensional memory device containing epitaxial ferroelectric memory elements and methods for forming the same
US11049880B2 (en) 2019-08-02 2021-06-29 Sandisk Technologies Llc Three-dimensional memory device containing epitaxial ferroelectric memory elements and methods for forming the same
US11502104B2 (en) 2019-08-15 2022-11-15 Sandisk Technologies Llc Antiferroelectric memory devices and methods of making the same
US11024648B2 (en) 2019-08-15 2021-06-01 Sandisk Technologies Llc Ferroelectric memory devices including a stack of ferroelectric and antiferroelectric layers and method of making the same
US11430813B2 (en) 2019-08-15 2022-08-30 Sandisk Technologies Llc Antiferroelectric memory devices and methods of making the same
US10937809B1 (en) 2019-08-15 2021-03-02 Sandisk Technologies Llc Three-dimensional memory device containing ferroelectric memory elements encapsulated by transition metal nitride materials and method of making thereof
US11573834B2 (en) * 2019-08-22 2023-02-07 Micron Technology, Inc. Computational partition for a multi-threaded, self-scheduling reconfigurable computing fabric
US11139237B2 (en) 2019-08-22 2021-10-05 Sandisk Technologies Llc Three-dimensional memory device containing horizontal and vertical word line interconnections and methods of forming the same
US11309332B2 (en) 2019-09-12 2022-04-19 Sandisk Technologies Llc Three-dimensional memory device containing ferroelectric memory elements encapsulated by transition metal-containing conductive elements and method of making thereof
US10910020B1 (en) 2019-09-24 2021-02-02 Sandisk Technologies Llc Three-dimensional memory device containing compact bit line switch circuit and method of making the same
US11049807B2 (en) 2019-09-25 2021-06-29 Sandisk Technologies Llc Three-dimensional memory device containing tubular blocking dielectric spacers
US11011209B2 (en) 2019-10-01 2021-05-18 Sandisk Technologies Llc Three-dimensional memory device including contact-level bit-line-connection structures and methods of making the same
US11289429B2 (en) 2019-10-07 2022-03-29 Sandisk Technologies Llc Three-dimensional memory die containing stress-compensating slit trench structures and methods for making the same
US11069631B2 (en) 2019-10-07 2021-07-20 Sandisk Technologies Llc Three-dimensional memory die containing stress-compensating slit trench structures and methods for making the same
JP7330357B2 (ja) * 2019-10-12 2023-08-21 長江存儲科技有限責任公司 水素ブロッキング層を有する３次元メモリデバイスおよびその製作方法
JP2021064762A (ja) * 2019-10-17 2021-04-22 本田技研工業株式会社 半導体装置
US10903237B1 (en) 2019-11-01 2021-01-26 Sandisk Technologies Llc Three-dimensional memory device including stepped connection plates and methods of forming the same
US11114459B2 (en) 2019-11-06 2021-09-07 Sandisk Technologies Llc Three-dimensional memory device containing width-modulated connection strips and methods of forming the same
US11094653B2 (en) 2019-11-13 2021-08-17 Sandisk Technologies Llc Bonded assembly containing a dielectric bonding pattern definition layer and methods of forming the same
US11257835B2 (en) 2019-11-22 2022-02-22 Sandisk Technologies Llc Three-dimensional memory device containing a dummy memory film isolation structure and method of making thereof
US11088116B2 (en) * 2019-11-25 2021-08-10 Sandisk Technologies Llc Bonded assembly containing horizontal and vertical bonding interfaces and methods of forming the same
US11289416B2 (en) 2019-11-26 2022-03-29 Sandisk Technologies Llc Three-dimensional memory device containing amorphous and crystalline blocking dielectric layers
US11201111B2 (en) 2019-11-27 2021-12-14 Sandisk Technologies Llc Three-dimensional memory device containing structures for enhancing gate-induced drain leakage current and methods of forming the same
US10950627B1 (en) 2019-12-09 2021-03-16 Sandisk Technologies Llc Three-dimensional memory device including split memory cells and methods of forming the same
US11101288B2 (en) 2019-12-11 2021-08-24 Sandisk Technologies Llc Three-dimensional memory device containing plural work function word lines and methods of forming the same
US11063063B2 (en) 2019-12-11 2021-07-13 Sandisk Technologies Llc Three-dimensional memory device containing plural work function word lines and methods of forming the same
WO2021127218A1 (en) 2019-12-19 2021-06-24 Sunrise Memory Corporation Process for preparing a channel region of a thin-film transistor
US11387250B2 (en) 2019-12-20 2022-07-12 Sandisk Technologies Llc Three-dimensional memory device containing metal-organic framework inter-word line insulating layers
US11296028B2 (en) 2019-12-20 2022-04-05 Sandisk Technologies Llc Semiconductor device containing metal-organic framework inter-line insulator structures and methods of manufacturing the same
US12035535B2 (en) 2019-12-27 2024-07-09 Sandisk Technologies Llc Three-dimensional NOR array including vertical word lines and discrete memory elements and methods of manufacture
US11088076B2 (en) 2019-12-27 2021-08-10 Sandisk Technologies Llc Bonding pads embedded in a dielectric diffusion barrier and having recessed metallic liners
US11114534B2 (en) 2019-12-27 2021-09-07 Sandisk Technologies Llc Three-dimensional nor array including vertical word lines and discrete channels and methods of making the same
US11756877B2 (en) 2020-01-07 2023-09-12 Sandisk Technologies Llc Three-dimensional memory device with via structures surrounded by perforated dielectric moat structure and methods of making the same
US11282783B2 (en) 2020-01-07 2022-03-22 Sandisk Technologies Llc Three-dimensional memory device with via structures surrounded by perforated dielectric moat structure and methods of making the same
US12068249B2 (en) 2020-01-07 2024-08-20 Sandisk Technologies Llc Three-dimensional memory device with dielectric isolated via structures and methods of making the same
US11121140B2 (en) 2020-01-08 2021-09-14 Sandisk Technologies Llc Ferroelectric tunnel junction memory device with integrated ovonic threshold switches
US11270963B2 (en) 2020-01-14 2022-03-08 Sandisk Technologies Llc Bonding pads including interfacial electromigration barrier layers and methods of making the same
US11342244B2 (en) 2020-01-21 2022-05-24 Sandisk Technologies Llc Bonded assembly of semiconductor dies containing pad level across-die metal wiring and method of forming the same
US11211370B2 (en) 2020-01-28 2021-12-28 Sandisk Technologies Llc Bonded assembly with vertical power and control signal connection adjacent to sense amplifier regions and methods of forming the same
US11171097B2 (en) 2020-01-28 2021-11-09 Sandisk Technologies Llc Bonded assembly containing metal-organic framework bonding dielectric and methods of forming the same
US11646283B2 (en) 2020-01-28 2023-05-09 Sandisk Technologies Llc Bonded assembly containing low dielectric constant bonding dielectric material
US11133252B2 (en) 2020-02-05 2021-09-28 Sandisk Technologies Llc Three-dimensional memory device containing horizontal and vertical word line interconnections and methods of forming the same
WO2021159028A1 (en) 2020-02-07 2021-08-12 Sunrise Memory Corporation High capacity memory circuit with low effective latency
US11580038B2 (en) 2020-02-07 2023-02-14 Sunrise Memory Corporation Quasi-volatile system-level memory
US11101289B1 (en) 2020-02-19 2021-08-24 Sandisk Technologies Llc Three-dimensional memory device with composite charge storage structures and methods for forming the same
US11114462B1 (en) 2020-02-19 2021-09-07 Sandisk Technologies Llc Three-dimensional memory device with composite charge storage structures and methods for forming the same
US11507301B2 (en) 2020-02-24 2022-11-22 Sunrise Memory Corporation Memory module implementing memory centric architecture
US11508693B2 (en) 2020-02-24 2022-11-22 Sunrise Memory Corporation High capacity memory module including wafer-section memory circuit
US11561911B2 (en) 2020-02-24 2023-01-24 Sunrise Memory Corporation Channel controller for shared memory access
US11244953B2 (en) 2020-02-26 2022-02-08 Sandisk Technologies Llc Three-dimensional memory device including molybdenum word lines and metal oxide spacers and method of making the same
US11569260B2 (en) 2020-02-26 2023-01-31 Sandisk Technologies Llc Three-dimensional memory device including discrete memory elements and method of making the same
US11430745B2 (en) 2020-03-02 2022-08-30 Sandisk Technologies Llc Semiconductor die containing silicon nitride stress compensating regions and method for making the same
US11145628B1 (en) 2020-03-20 2021-10-12 Sandisk Technologies Llc Semiconductor structure containing reentrant shaped bonding pads and methods of forming the same
US11527500B2 (en) 2020-03-20 2022-12-13 Sandisk Technologies Llc Semiconductor structure containing multilayer bonding pads and methods of forming the same
US11201139B2 (en) 2020-03-20 2021-12-14 Sandisk Technologies Llc Semiconductor structure containing reentrant shaped bonding pads and methods of forming the same
US11222954B2 (en) 2020-03-24 2022-01-11 Sandisk Technologies Llc Three-dimensional memory device containing inter-select-gate electrodes and methods of making the same
US11049568B1 (en) 2020-03-27 2021-06-29 Sandisk Technologies Llc Three-dimensional memory device with depletion region position control and method of erasing same using gate induced leakage
US11515227B2 (en) 2020-04-02 2022-11-29 Sandisk Technologies Llc Semiconductor die including edge ring structures and methods for making the same
US11342286B2 (en) 2020-04-02 2022-05-24 Sandisk Technologies Llc Semiconductor die including edge ring structures and methods for making the same
US11289388B2 (en) 2020-04-02 2022-03-29 Sandisk Technologies Llc Semiconductor die including edge ring structures and methods for making the same
US11705496B2 (en) 2020-04-08 2023-07-18 Sunrise Memory Corporation Charge-trapping layer with optimized number of charge-trapping sites for fast program and erase of a memory cell in a 3-dimensional NOR memory string array
US11659711B2 (en) 2020-04-15 2023-05-23 Sandisk Technologies Llc Three-dimensional memory device including discrete charge storage elements and methods of forming the same
US11398496B2 (en) 2020-04-27 2022-07-26 Sandisk Technologies Llc Three-dimensional memory device employing thinned insulating layers and methods for forming the same
US11489043B2 (en) 2020-04-27 2022-11-01 Sandisk Technologies Llc Three-dimensional memory device employing thinned insulating layers and methods for forming the same
US11152284B1 (en) 2020-05-07 2021-10-19 Sandisk Technologies Llc Three-dimensional memory device with a dielectric isolation spacer and methods of forming the same
US11398497B2 (en) 2020-05-18 2022-07-26 Sandisk Technologies Llc Three-dimensional memory device containing auxiliary support pillar structures and method of making the same
US11637118B2 (en) 2020-05-18 2023-04-25 Sandisk Technologies Llc Three-dimensional memory device containing auxiliary support pillar structures and method of making the same
US11177280B1 (en) 2020-05-18 2021-11-16 Sandisk Technologies Llc Three-dimensional memory device including wrap around word lines and methods of forming the same
US11637119B2 (en) 2020-05-18 2023-04-25 Sandisk Technologies Llc Three-dimensional memory device containing auxiliary support pillar structures and method of making the same
US11367736B2 (en) 2020-05-22 2022-06-21 Sandisk Technologies Llc Through-stack contact via structures for a three-dimensional memory device and methods of forming the same
US11342245B2 (en) 2020-05-22 2022-05-24 Sandisk Technologies Llc Through-stack contact via structures for a three-dimensional memory device and methods of forming the same
US11355506B2 (en) 2020-05-22 2022-06-07 Sandisk Technologies Llc Through-stack contact via structures for a three-dimensional memory device and methods of forming the same
US11374020B2 (en) 2020-05-29 2022-06-28 Sandisk Technologies Llc Three-dimensional memory device containing III-V compound semiconductor channel and contacts and method of making the same
US11508748B2 (en) 2020-05-29 2022-11-22 Sandisk Technologies Llc Three-dimensional memory device containing III-V compound semiconductor channel and contacts and method of making the same
US11282857B2 (en) 2020-05-29 2022-03-22 Sandisk Technologies Llc Three-dimensional memory device containing III-V compound semiconductor channel and contacts and method of making the same
US11515317B2 (en) 2020-06-05 2022-11-29 Sandisk Technologies Llc Three-dimensional memory device including through-memory-level via structures and methods of making the same
US11398488B2 (en) 2020-06-05 2022-07-26 Sandisk Technologies Llc Three-dimensional memory device including through-memory-level via structures and methods of making the same
US11404427B2 (en) 2020-06-12 2022-08-02 Sandisk Technologies Llc Three-dimensional memory device including multi-tier moat isolation structures and methods of making the same
US11508749B2 (en) 2020-06-15 2022-11-22 Sandisk Technologies Llc Cutoff gate electrodes for switches for a three-dimensional memory device and method of making the same
US11521984B2 (en) 2020-06-24 2022-12-06 Sandisk Technologies Llc Three-dimensional memory device containing low resistance source-level contact and method of making thereof
US11302713B2 (en) 2020-06-25 2022-04-12 Sandisk Technologies Llc Three-dimensional memory device including III-V compound semiconductor channel layer and method of making the same
US11778817B2 (en) 2020-06-25 2023-10-03 Sandisk Technologies Llc Three-dimensional memory device including III-V compound semiconductor channel layer and method of making the same
US11903218B2 (en) 2020-06-26 2024-02-13 Sandisk Technologies Llc Bonded memory devices and methods of making the same
US11538817B2 (en) 2020-06-26 2022-12-27 Sandisk Technologies Llc Bonded memory devices and methods of making the same
US11342347B2 (en) 2020-06-30 2022-05-24 Sandisk Technologies Llc Spacerless source contact layer replacement process and three-dimensional memory device formed by the process
US11444101B2 (en) 2020-06-30 2022-09-13 Sandisk Technologies Llc Spacerless source contact layer replacement process and three-dimensional memory device formed by the process
US11450679B2 (en) 2020-07-01 2022-09-20 Sandisk Technologies Llc Three-dimensional memory device including stairless word line contact structures for and method of making the same
US11973026B2 (en) 2020-07-01 2024-04-30 Sandisk Technologies Llc Three-dimensional memory device including stairless word line contact structures and method of making the same
US11495612B2 (en) 2020-07-01 2022-11-08 Sandisk Technologies Llc Three-dimensional memory device including stairless word line contact structures for and method of making the same
US11778818B2 (en) 2020-07-21 2023-10-03 Sandisk Technologies Llc Three-dimensional memory device with punch-through-resistant word lines and methods for forming the same
US11587920B2 (en) 2020-07-22 2023-02-21 Sandisk Technologies Llc Bonded semiconductor die assembly containing through-stack via structures and methods for making the same
US11355437B2 (en) 2020-08-04 2022-06-07 Sandisk Technologies Llc Three-dimensional memory device including bump-containing bit lines and methods for manufacturing the same
US11410924B2 (en) 2020-08-21 2022-08-09 Sandisk Technologies Llc Three-dimensional memory device including contact via structures for multi-level stepped surfaces and methods for forming the same
US11430736B2 (en) 2020-08-24 2022-08-30 Sandisk Technologies Llc Semiconductor device including having metal organic framework interlayer dielectric layer between metal lines and methods of forming the same
US11569215B2 (en) 2020-08-31 2023-01-31 Sandisk Technologies Llc Three-dimensional memory device with vertical field effect transistors and method of making thereof
US11963352B2 (en) 2020-08-31 2024-04-16 Sandisk Technologies Llc Three-dimensional memory device with vertical field effect transistors and method of making thereof
US11937424B2 (en) 2020-08-31 2024-03-19 Sunrise Memory Corporation Thin-film storage transistors in a 3-dimensional array of nor memory strings and process for fabricating the same
US11296113B2 (en) 2020-08-31 2022-04-05 Sandisk Technologies Llc Three-dimensional memory device with vertical field effect transistors and method of making thereof
US11355163B2 (en) 2020-09-29 2022-06-07 Alibaba Group Holding Limited Memory interconnection architecture systems and methods
US11963354B2 (en) 2020-09-30 2024-04-16 Sandisk Technologies Llc Three-dimensional memory device with dielectric or semiconductor wall support structures and method of forming the same
US11322440B2 (en) 2020-09-30 2022-05-03 Sandisk Technologies Llc Three-dimensional memory device with dielectric wall support structures and method of forming the same
US11600635B2 (en) 2020-10-13 2023-03-07 Sandisk Technologies Llc Three-dimensional memory device containing bump stack structures and method of deformation measurement thereof
US11264357B1 (en) 2020-10-20 2022-03-01 Invensas Corporation Mixed exposure for large die
US11488975B2 (en) 2020-10-27 2022-11-01 Sandisk Technologies Llc Multi-tier three-dimensional memory device with nested contact via structures and methods for forming the same
US11631695B2 (en) 2020-10-30 2023-04-18 Sandisk Technologies Llc Three-dimensional memory device containing composite word lines containing metal and silicide and method of making thereof
US11842777B2 (en) 2020-11-17 2023-12-12 Sunrise Memory Corporation Methods for reducing disturb errors by refreshing data alongside programming or erase operations
US11393757B2 (en) 2020-11-19 2022-07-19 Sandisk Technologies Llc Three-dimensional memory device containing oxidation-resistant contact structures and methods of making the same
US11848056B2 (en) 2020-12-08 2023-12-19 Sunrise Memory Corporation Quasi-volatile memory with enhanced sense amplifier operation
US11380707B2 (en) 2020-12-09 2022-07-05 Sandisk Technologies Llc Three-dimensional memory device including backside trench support structures and methods of forming the same
US11631690B2 (en) 2020-12-15 2023-04-18 Sandisk Technologies Llc Three-dimensional memory device including trench-isolated memory planes and method of making the same
US11676954B2 (en) 2020-12-28 2023-06-13 Sandisk Technologies Llc Bonded three-dimensional memory devices with backside source power supply mesh and methods of making the same
US11844222B2 (en) 2021-01-12 2023-12-12 Sandisk Technologies Llc Three-dimensional memory device with backside support pillar structures and methods of forming the same
US11515250B2 (en) 2021-02-03 2022-11-29 Sandisk Technologies Llc Three dimensional semiconductor device containing composite contact via structures and methods of making the same
US12010842B2 (en) 2021-02-03 2024-06-11 Sandisk Technologies Llc Method of forming a stepped surface in a three-dimensional memory device and structures incorporating the same
US11532570B2 (en) 2021-02-11 2022-12-20 Sandisk Technologies Llc Three-dimensional memory device containing bridges for enhanced structural support and methods of forming the same
US11450685B2 (en) 2021-02-11 2022-09-20 Sandisk Technologies Llc Three-dimensional memory device containing bridges for enhanced structural support and methods of forming the same
US11621202B2 (en) 2021-03-02 2023-04-04 Western Digital Technologies, Inc. Electrical overlay measurement methods and structures for wafer-to-wafer bonding
US11569139B2 (en) 2021-03-02 2023-01-31 Western Digital Technologies, Inc. Electrical overlay measurement methods and structures for wafer-to-wafer bonding
US11749600B2 (en) 2021-04-07 2023-09-05 Sandisk Technologies Llc Three-dimensional memory device with hybrid staircase structure and methods of forming the same
US11991881B2 (en) 2021-04-09 2024-05-21 Sandisk Technologies Llc Three-dimensional memory device with off-center or reverse slope staircase regions and methods for forming the same
US12058854B2 (en) 2021-04-16 2024-08-06 Sandisk Technologies Llc Three-dimensional memory device with isolated source strips and method of making the same
US11758730B2 (en) 2021-05-10 2023-09-12 Sandisk Technologies Llc Bonded assembly of a memory die and a logic die including laterally shifted bit-line bonding pads and methods of forming the same
US11877446B2 (en) * 2021-06-11 2024-01-16 Sandisk Technologies Llc Three-dimensional memory device with electrically conductive layers containing vertical tubular liners and methods for forming the same
TW202310429A (zh) 2021-07-16 2023-03-01 美商日升存儲公司 薄膜鐵電電晶體的三維記憶體串陣列
US11996153B2 (en) 2021-08-09 2024-05-28 Sandisk Technologies Llc Three-dimensional memory device with separated contact regions and methods for forming the same
US11889694B2 (en) 2021-08-09 2024-01-30 Sandisk Technologies Llc Three-dimensional memory device with separated contact regions and methods for forming the same
US11792988B2 (en) 2021-08-09 2023-10-17 Sandisk Technologies Llc Three-dimensional memory device with separated contact regions and methods for forming the same
US11997850B2 (en) 2021-08-25 2024-05-28 Sandisk Technologies Llc Three-dimensional memory device with staircase etch stop structures and methods for forming the same
US11925027B2 (en) 2021-12-27 2024-03-05 Sandisk Technologies Llc Three-dimensional memory device including sense amplifiers having a common width and separation
US12041770B2 (en) 2021-12-27 2024-07-16 Sandisk Technologies Llc Field effect transistors having concave drain extension region and method of making the same
US12108597B2 (en) 2022-03-02 2024-10-01 Sandisk Technologies Llc Three-dimensional memory device containing a pillar contact between channel and source and methods of making the same

Family Cites Families (251)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US555212A (en) * 1896-02-25 dickersos
US2915722A (en) 1957-05-13 1959-12-01 Inductosyn Corp Pattern for slider of position measuring transformer
GB914656A (zh) 1959-11-10
US3430835A (en) * 1966-06-07 1969-03-04 Westinghouse Electric Corp Wire bonding apparatus for microelectronic components
US3445925A (en) 1967-04-25 1969-05-27 Motorola Inc Method for making thin semiconductor dice
NL6706735A (zh) 1967-05-13 1968-11-14
US3560364A (en) 1968-10-10 1971-02-02 Ibm Method for preparing thin unsupported films of silicon nitride
DE1812199C3 (de) 1968-12-02 1980-07-03 Siemens Ag, 1000 Berlin Und 8000 Muenchen Integrierte, optisch-elektronische Festkörper-Schaltungsanordnung
US3615901A (en) 1969-12-01 1971-10-26 Gustav K Medicus Method of making a plastically shapeable cathode material
US3716429A (en) 1970-06-18 1973-02-13 Rca Corp Method of making semiconductor devices
US3777227A (en) 1972-08-21 1973-12-04 Westinghouse Electric Corp Double diffused high voltage, high current npn transistor
US3922705A (en) 1973-06-04 1975-11-25 Gen Electric Dielectrically isolated integral silicon diaphram or other semiconductor product
US3868565A (en) 1973-07-30 1975-02-25 Jack Kuipers Object tracking and orientation determination means, system and process
US4070230A (en) * 1974-07-04 1978-01-24 Siemens Aktiengesellschaft Semiconductor component with dielectric carrier and its manufacture
US3932932A (en) 1974-09-16 1976-01-20 International Telephone And Telegraph Corporation Method of making multilayer printed circuit board
US3997381A (en) 1975-01-10 1976-12-14 Intel Corporation Method of manufacture of an epitaxial semiconductor layer on an insulating substrate
US4028547A (en) 1975-06-30 1977-06-07 Bell Telephone Laboratories, Incorporated X-ray photolithography
US4196232A (en) * 1975-12-18 1980-04-01 Rca Corporation Method of chemically vapor-depositing a low-stress glass layer
US4142004A (en) 1976-01-22 1979-02-27 Bell Telephone Laboratories, Incorporated Method of coating semiconductor substrates
NL7607095A (nl) 1976-06-29 1978-01-02 Philips Nv Trefplaatmontage voor een opneembuis, en werkwijze voor de vervaardiging daarvan.
GB1542084A (en) * 1976-08-31 1979-03-14 Standard Telephones Cables Ltd Thin silicon semiconductor devices
US4249302A (en) * 1978-12-28 1981-02-10 Ncr Corporation Multilayer printed circuit board
JPS55156395A (en) 1979-05-24 1980-12-05 Fujitsu Ltd Method of fabricating hollow multilayer printed board
JPS5930130B2 (ja) * 1979-09-20 1984-07-25 富士通株式会社 気相成長方法
US4262631A (en) 1979-10-01 1981-04-21 Kubacki Ronald M Thin film deposition apparatus using an RF glow discharge
US4401986A (en) 1979-12-26 1983-08-30 Texas Instruments Incorporated Position sensor and system
US4416054A (en) * 1980-07-01 1983-11-22 Westinghouse Electric Corp. Method of batch-fabricating flip-chip bonded dual integrated circuit arrays
JPS5747711A (en) 1980-08-08 1982-03-18 Fujitsu Ltd Chemical plasma growing method in vapor phase
DE3070833D1 (en) 1980-09-19 1985-08-08 Ibm Deutschland Structure with a silicon body that presents an aperture and method of making this structure
JPS5837948A (ja) * 1981-08-31 1983-03-05 Toshiba Corp 積層半導体記憶装置
US4500905A (en) 1981-09-30 1985-02-19 Tokyo Shibaura Denki Kabushiki Kaisha Stacked semiconductor device with sloping sides
JPS58111491A (ja) 1981-12-25 1983-07-02 Nippon Kogaku Kk <Nikon> 固体撮像装置
JPS58139449A (ja) * 1982-02-15 1983-08-18 Fujitsu Ltd 垂直信号線を有する多層集積回路
US4585991A (en) * 1982-06-03 1986-04-29 Texas Instruments Incorporated Solid state multiprobe testing apparatus
US4416064A (en) 1982-06-30 1983-11-22 Hurst Roger W Ladder bar dial
US4622632A (en) 1982-08-18 1986-11-11 Board Of Regents, University Of Washington Data processing system having a pyramidal array of processors
US4761681A (en) * 1982-09-08 1988-08-02 Texas Instruments Incorporated Method for fabricating a semiconductor contact and interconnect structure using orientation dependent etching and thermomigration
US4663559A (en) 1982-09-17 1987-05-05 Christensen Alton O Field emission device
JPS59117271A (ja) * 1982-12-24 1984-07-06 Hitachi Ltd 圧力感知素子を有する半導体装置とその製造法
US4604162A (en) 1983-06-13 1986-08-05 Ncr Corporation Formation and planarization of silicon-on-insulator structures
JPH0743959B2 (ja) * 1984-02-06 1995-05-15 株式会社日立製作所 誤り訂正機能付半導体メモリ
JPS6130059A (ja) * 1984-07-20 1986-02-12 Nec Corp 半導体装置の製造方法
US4702936A (en) * 1984-09-20 1987-10-27 Applied Materials Japan, Inc. Gas-phase growth process
US4617160A (en) * 1984-11-23 1986-10-14 Irvine Sensors Corporation Method for fabricating modules comprising uniformly stacked, aligned circuit-carrying layers
DE3504714A1 (de) 1985-02-12 1986-08-14 Siemens AG, 1000 Berlin und 8000 München Lithografiegeraet zur erzeugung von mikrostrukturen
US4618763A (en) * 1985-04-12 1986-10-21 Grumman Aerospace Corporation Infrared focal plane module with stacked IC module body
NL8501773A (nl) 1985-06-20 1987-01-16 Philips Nv Werkwijze voor het vervaardigen van halfgeleiderinrichtingen.
JPS629642A (ja) 1985-07-05 1987-01-17 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
DE3527532A1 (de) 1985-08-01 1987-02-12 Teves Gmbh Alfred Verfahren und bremsanlage zur vortriebsregelung
JPS62155517A (ja) 1985-12-27 1987-07-10 Canon Inc パターン描画装置及び方法
NL8600087A (nl) 1986-01-17 1987-08-17 Philips Nv Inrichting voor vol-duplex datatransmissie over tweedraadsverbindingen.
US4952446A (en) 1986-02-10 1990-08-28 Cornell Research Foundation, Inc. Ultra-thin semiconductor membranes
JPS62190744A (ja) * 1986-02-18 1987-08-20 Agency Of Ind Science & Technol 垂直配線構造
JPS62208665A (ja) * 1986-03-07 1987-09-12 Mitsubishi Electric Corp 積層形半導体記憶装置
KR900008647B1 (ko) 1986-03-20 1990-11-26 후지쓰 가부시끼가이샤 3차원 집적회로와 그의 제조방법
JPS62272556A (ja) * 1986-05-20 1987-11-26 Fujitsu Ltd 三次元半導体集積回路装置及びその製造方法
JPS62239400A (ja) * 1986-04-08 1987-10-20 Nec Corp ランダムアクセスメモリ
US4706166A (en) 1986-04-25 1987-11-10 Irvine Sensors Corporation High-density electronic modules--process and product
JPS62259285A (ja) * 1986-05-06 1987-11-11 Mitsubishi Electric Corp 記憶装置のアドレス指定方式
US4954875A (en) * 1986-07-17 1990-09-04 Laser Dynamics, Inc. Semiconductor wafer array with electrically conductive compliant material
US4897708A (en) 1986-07-17 1990-01-30 Laser Dynamics, Inc. Semiconductor wafer array
US4810673A (en) 1986-09-18 1989-03-07 Texas Instruments Incorporated Oxide deposition method
US4684436A (en) 1986-10-29 1987-08-04 International Business Machines Corp. Method of simultaneously etching personality and select
US4939694A (en) * 1986-11-03 1990-07-03 Hewlett-Packard Company Defect tolerant self-testing self-repairing memory system
JPS63149900A (ja) * 1986-12-15 1988-06-22 Toshiba Corp 半導体メモリ
US4892753A (en) * 1986-12-19 1990-01-09 Applied Materials, Inc. Process for PECVD of silicon oxide using TEOS decomposition
US5000113A (en) 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
US4721938A (en) * 1986-12-22 1988-01-26 Delco Electronics Corporation Process for forming a silicon pressure transducer
JPS63186457A (ja) * 1987-01-29 1988-08-02 Hitachi Ltd 半導体装置及びその製造方法
JPH063837B2 (ja) * 1987-03-03 1994-01-12 シャープ株式会社 三次元半導体集積回路の製造方法
US5010024A (en) 1987-03-04 1991-04-23 Advanced Micro Devices, Inc. Passivation for integrated circuit structures
US5110712A (en) 1987-06-12 1992-05-05 Hewlett-Packard Company Incorporation of dielectric layers in a semiconductor
EP0304263A3 (en) * 1987-08-17 1990-09-12 Lsi Logic Corporation Semiconductor chip assembly
US4849857A (en) 1987-10-05 1989-07-18 Olin Corporation Heat dissipating interconnect tape for use in tape automated bonding
JPH088332B2 (ja) * 1987-10-20 1996-01-29 アーヴィン・センサーズ・コーポレーション 高密度電子モジュール及びその製造方法
US4892842A (en) * 1987-10-29 1990-01-09 Tektronix, Inc. Method of treating an integrated circuit
FR2623013A1 (fr) 1987-11-06 1989-05-12 Commissariat Energie Atomique Source d'electrons a cathodes emissives a micropointes et dispositif de visualisation par cathodoluminescence excitee par emission de champ,utilisant cette source
US4825277A (en) 1987-11-17 1989-04-25 Motorola Inc. Trench isolation process and structure
KR900002716B1 (ko) 1987-11-26 1990-04-23 재단법인한국전자 통신연구소 레이져묘화기의 집광광학장치
US4784721A (en) * 1988-02-22 1988-11-15 Honeywell Inc. Integrated thin-film diaphragm; backside etch
GB2215914B (en) 1988-03-17 1991-07-03 Emi Plc Thorn A microengineered diaphragm pressure switch and a method of manufacture thereof
JPH01268151A (ja) * 1988-04-20 1989-10-25 Sharp Corp 半導体装置
GB8810973D0 (en) 1988-05-10 1988-06-15 Stc Plc Improvements in integrated circuits
US5323035A (en) 1992-10-13 1994-06-21 Glenn Leedy Interconnection structure for integrated circuits and method for making same
US5512397A (en) * 1988-05-16 1996-04-30 Leedy; Glenn J. Stepper scanner discretionary lithography and common mask discretionary lithography for integrated circuits
US4924589A (en) 1988-05-16 1990-05-15 Leedy Glenn J Method of making and testing an integrated circuit
US4994735A (en) 1988-05-16 1991-02-19 Leedy Glenn J Flexible tester surface for testing integrated circuits
US5034685A (en) 1988-05-16 1991-07-23 Leedy Glenn J Test device for testing integrated circuits
US5225771A (en) 1988-05-16 1993-07-06 Dri Technology Corp. Making and testing an integrated circuit using high density probe points
US5020219A (en) 1988-05-16 1991-06-04 Leedy Glenn J Method of making a flexible tester surface for testing integrated circuits
US5354695A (en) * 1992-04-08 1994-10-11 Leedy Glenn J Membrane dielectric isolation IC fabrication
US5103557A (en) 1988-05-16 1992-04-14 Leedy Glenn J Making and testing an integrated circuit using high density probe points
US6288561B1 (en) * 1988-05-16 2001-09-11 Elm Technology Corporation Method and apparatus for probing, testing, burn-in, repairing and programming of integrated circuits in a closed environment using a single apparatus
EP0344513A3 (de) 1988-05-31 1991-01-16 Siemens Aktiengesellschaft Verfahren zur Herstellung einer Steuerplatte für ein Lithographiegerät
USRE34893E (en) * 1988-06-08 1995-04-04 Nippondenso Co., Ltd. Semiconductor pressure sensor and method of manufacturing same
US5110373A (en) 1988-09-13 1992-05-05 Nanostructures, Inc. Silicon membrane with controlled stress
US4966663A (en) 1988-09-13 1990-10-30 Nanostructures, Inc. Method for forming a silicon membrane with controlled stress
US5008619A (en) 1988-11-18 1991-04-16 Amp-Akzo Corporation Multilevel circuit board precision positioning
JPH02143466A (ja) 1988-11-25 1990-06-01 Mitsubishi Electric Corp 半導体装置の製造方法
EP0375232B1 (en) 1988-12-21 1996-03-06 AT&T Corp. Growth-modified thermal oxidation process for thin oxides
JPH0744253B2 (ja) * 1988-12-23 1995-05-15 松下電器産業株式会社 積層集積回路
JPH02178960A (ja) * 1988-12-29 1990-07-11 Sharp Corp 神経回路装置
JPH02195598A (ja) * 1989-01-25 1990-08-02 Hitachi Ltd 半導体記憶装置
US4950987A (en) 1989-03-03 1990-08-21 University Of North Carolina At Charlotte Magneto-inductive sensor for performing tactile and proximity sensing
JP2569789B2 (ja) * 1989-03-13 1997-01-08 富士電機株式会社 半導体チップの電極形成方法
US4857481A (en) 1989-03-14 1989-08-15 Motorola, Inc. Method of fabricating airbridge metal interconnects
JP2778977B2 (ja) * 1989-03-14 1998-07-23 株式会社東芝 半導体装置及びその製造方法
JP2823276B2 (ja) 1989-03-18 1998-11-11 株式会社東芝 Ｘ線マスクの製造方法および薄膜の内部応力制御装置
US4990462A (en) 1989-04-12 1991-02-05 Advanced Micro Devices, Inc. Method for coplanar integration of semiconductor ic devices
JP2517410B2 (ja) * 1989-05-15 1996-07-24 三菱電機株式会社 学習機能付集積回路装置
US5262341A (en) * 1989-05-19 1993-11-16 Fujitsu Limited Blanking aperture array and charged particle beam exposure method
DE69017095T2 (de) 1989-05-19 1995-06-14 Fujitsu Ltd Anordnung von Strahlaustastungsblenden, Verfahren zur Herstellung derselben, Gerät und Verfahren zur Belichtung von mit einem Strahl geladenen Teilchen.
US4928058A (en) 1989-05-23 1990-05-22 The University Of Rochester Electro-optic signal measurement
US5051326A (en) 1989-05-26 1991-09-24 At&T Bell Laboratories X-Ray lithography mask and devices made therewith
US4919749A (en) 1989-05-26 1990-04-24 Nanostructures, Inc. Method for making high resolution silicon shadow masks
US5471427A (en) * 1989-06-05 1995-11-28 Mitsubishi Denki Kabushiki Kaisha Circuit for repairing defective bit in semiconductor memory device and repairing method
US5070026A (en) * 1989-06-26 1991-12-03 Spire Corporation Process of making a ferroelectric electronic component and product
JPH0344067A (ja) * 1989-07-11 1991-02-25 Nec Corp 半導体基板の積層方法
US5119164A (en) 1989-07-25 1992-06-02 Advanced Micro Devices, Inc. Avoiding spin-on-glass cracking in high aspect ratio cavities
JP2815184B2 (ja) * 1989-08-04 1998-10-27 オリンパス光学工業株式会社 三次元集積メモリ
US5071510A (en) * 1989-09-22 1991-12-10 Robert Bosch Gmbh Process for anisotropic etching of silicon plates
US5098865A (en) 1989-11-02 1992-03-24 Machado Jose R High step coverage silicon oxide thin films
US5156909A (en) 1989-11-28 1992-10-20 Battelle Memorial Institute Thick, low-stress films, and coated substrates formed therefrom, and methods for making same
JPH03175664A (ja) * 1989-12-04 1991-07-30 Sharp Corp 半導体装置
US5045921A (en) * 1989-12-26 1991-09-03 Motorola, Inc. Pad array carrier IC device using flexible tape
US5169805A (en) 1990-01-29 1992-12-08 International Business Machines Corporation Method of resiliently mounting an integrated circuit chip to enable conformal heat dissipation
JPH03225696A (ja) * 1990-01-30 1991-10-04 Sharp Corp 半導体記憶装置
JPH04228196A (ja) * 1990-04-18 1992-08-18 Hitachi Ltd 半導体集積回路
US5278839A (en) * 1990-04-18 1994-01-11 Hitachi, Ltd. Semiconductor integrated circuit having self-check and self-repair capabilities
KR920702779A (ko) * 1990-04-24 1992-10-06 아이지와 스스무 회로 셀·어레이를 갖춘 반도체 장치 및 데이타 입출력 장치
JP2847890B2 (ja) * 1990-04-27 1999-01-20 株式会社島津製作所 ３次元実装用半導体基板の製造方法
US5116777A (en) 1990-04-30 1992-05-26 Sgs-Thomson Microelectronics, Inc. Method for fabricating semiconductor devices by use of an N+ buried layer for complete isolation
ES2044735B1 (es) * 1990-05-04 1994-08-01 Chevron Research And Tecnology Elementos de tanque de lastre para un buque de doble casco.
JPH0442957A (ja) * 1990-06-06 1992-02-13 Matsushita Electron Corp 半導体集積回路装置の製造方法
US5203731A (en) 1990-07-18 1993-04-20 International Business Machines Corporation Process and structure of an integrated vacuum microelectronic device
JPH0498342A (ja) * 1990-08-09 1992-03-31 Mitsubishi Electric Corp 半導体記憶装置
US5062689A (en) 1990-08-21 1991-11-05 Koehler Dale R Electrostatically actuatable light modulating device
FR2666173A1 (fr) * 1990-08-21 1992-02-28 Thomson Csf Structure hybride d'interconnexion de circuits integres et procede de fabrication.
JP2600018B2 (ja) * 1990-09-29 1997-04-16 三菱電機株式会社 半導体記憶装置
JP2876773B2 (ja) * 1990-10-22 1999-03-31 セイコーエプソン株式会社 プログラム命令語長可変型計算装置及びデータ処理装置
US5117282A (en) 1990-10-29 1992-05-26 Harris Corporation Stacked configuration for integrated circuit devices
US5245227A (en) 1990-11-02 1993-09-14 Atmel Corporation Versatile programmable logic cell for use in configurable logic arrays
US5130894A (en) * 1990-11-26 1992-07-14 At&T Bell Laboratories Three-dimensional circuit modules
JP2573416B2 (ja) * 1990-11-28 1997-01-22 株式会社東芝 半導体記憶装置
US5376561A (en) * 1990-12-31 1994-12-27 Kopin Corporation High density electronic circuit modules
JP3071876B2 (ja) 1991-01-08 2000-07-31 株式会社東芝 Ｘ線マスク、その製造方法、及びこれを用いた露光方法
NL9100327A (nl) * 1991-02-25 1992-09-16 Philips Nv Kathode.
DE4106288C2 (de) 1991-02-28 2001-05-31 Bosch Gmbh Robert Sensor zur Messung von Drücken oder Beschleunigungen
US5111278A (en) 1991-03-27 1992-05-05 Eichelberger Charles W Three-dimensional multichip module systems
FR2674593B1 (fr) 1991-03-29 1993-05-07 Valeo Amortisseur de torsion comportant un preamortisseur a boitier avec pattes a crochets, notamment pour vehicule automobile.
JPH04326757A (ja) * 1991-04-26 1992-11-16 Hitachi Ltd 情報処理装置及びそれを用いた並列計算機システム
EP0516866A1 (en) * 1991-05-03 1992-12-09 International Business Machines Corporation Modular multilayer interwiring structure
DE69224640T2 (de) * 1991-05-17 1998-10-01 Lam Res Corp VERFAHREN ZUR BESCHICHTUNG EINES SIOx FILMES MIT REDUZIERTER INTRINSISCHER SPANNUNG UND/ODER REDUZIERTEM WASSERSTOFFGEHALT
JP2622038B2 (ja) * 1991-06-03 1997-06-18 シャープ株式会社 半導体装置及びその製造方法
US5279865A (en) * 1991-06-28 1994-01-18 Digital Equipment Corporation High throughput interlevel dielectric gap filling process
JP2555811B2 (ja) * 1991-09-10 1996-11-20 富士通株式会社 半導体チップのフリップチップ接合方法
US6230233B1 (en) * 1991-09-13 2001-05-08 Sandisk Corporation Wear leveling techniques for flash EEPROM systems
US5270261A (en) * 1991-09-13 1993-12-14 International Business Machines Corporation Three dimensional multichip package methods of fabrication
US5202754A (en) * 1991-09-13 1993-04-13 International Business Machines Corporation Three-dimensional multichip packages and methods of fabrication
FR2681472B1 (fr) * 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
US5151775A (en) 1991-10-07 1992-09-29 Tektronix, Inc. Integrated circuit device having improved substrate capacitance isolation
JPH05109977A (ja) * 1991-10-18 1993-04-30 Mitsubishi Electric Corp 半導体装置
JPH05129423A (ja) * 1991-10-30 1993-05-25 Rohm Co Ltd 半導体装置及びその製造方法
US5856695A (en) * 1991-10-30 1999-01-05 Harris Corporation BiCMOS devices
JP3178052B2 (ja) * 1991-12-13 2001-06-18 ソニー株式会社 半導体装置とその製造方法
KR950001159B1 (ko) * 1991-12-27 1995-02-11 삼성전자 주식회사 반도체 메모리장치의 박막트랜지스터 및 그 제조방법
US5284804A (en) * 1991-12-31 1994-02-08 Texas Instruments Incorporated Global planarization process
JPH05283607A (ja) * 1992-02-03 1993-10-29 Hitachi Ltd 半導体集積回路装置及びそれを利用した計算機システム
JPH05250900A (ja) * 1992-03-09 1993-09-28 Mitsubishi Electric Corp テスト機能付き半導体集積回路
US6714625B1 (en) * 1992-04-08 2004-03-30 Elm Technology Corporation Lithography device for semiconductor circuit pattern generation
US5985693A (en) * 1994-09-30 1999-11-16 Elm Technology Corporation High density three-dimensional IC interconnection
US5236118A (en) * 1992-05-12 1993-08-17 The Regents Of The University Of California Aligned wafer bonding
US6017658A (en) * 1992-05-13 2000-01-25 The United States Of America As Represented By The Secretary Of The Navy Lithographic mask and method for fabrication thereof
US6355976B1 (en) * 1992-05-14 2002-03-12 Reveo, Inc Three-dimensional packaging technology for multi-layered integrated circuits
JP3544974B2 (ja) * 1992-05-15 2004-07-21 イルビン センサーズ コーポレーション 一体化積層体
US5273940A (en) * 1992-06-15 1993-12-28 Motorola, Inc. Multiple chip package with thinned semiconductor chips
US5489554A (en) 1992-07-21 1996-02-06 Hughes Aircraft Company Method of making a 3-dimensional circuit assembly having electrical contacts that extend through the IC layer
US5432999A (en) * 1992-08-20 1995-07-18 Capps; David F. Integrated circuit lamination process
US5374569A (en) * 1992-09-21 1994-12-20 Siliconix Incorporated Method for forming a BiCDMOS
US5324687A (en) * 1992-10-16 1994-06-28 General Electric Company Method for thinning of integrated circuit chips for lightweight packaged electronic systems
US5347428A (en) * 1992-12-03 1994-09-13 Irvine Sensors Corporation Module comprising IC memory stack dedicated to and structurally combined with an IC microprocessor chip
US5426072A (en) * 1993-01-21 1995-06-20 Hughes Aircraft Company Process of manufacturing a three dimensional integrated circuit from stacked SOI wafers using a temporary silicon substrate
JPH06251172A (ja) * 1993-02-26 1994-09-09 Hitachi Ltd 半導体集積回路システム装置
IT1261411B (it) * 1993-03-12 1996-05-23 Texas Instruments Italia Spa Metodo e circuiteria per l'uso di memorie aventi locazioni difettose erelativa apparecchiatura di produzione.
JP2605968B2 (ja) * 1993-04-06 1997-04-30 日本電気株式会社 半導体集積回路およびその形成方法
WO1994026083A1 (en) * 1993-04-23 1994-11-10 Irvine Sensors Corporation Electronic module comprising a stack of ic chips
US5694588A (en) 1993-05-07 1997-12-02 Texas Instruments Incorporated Apparatus and method for synchronizing data transfers in a single instruction multiple data processor
US5385632A (en) * 1993-06-25 1995-01-31 At&T Laboratories Method for manufacturing integrated semiconductor devices
US5399505A (en) * 1993-07-23 1995-03-21 Motorola, Inc. Method and apparatus for performing wafer level testing of integrated circuit dice
FR2709020B1 (fr) * 1993-08-13 1995-09-08 Thomson Csf Procédé d'interconnexion de pastilles semi-conductrices en trois dimensions, et composant en résultant.
EP0713609B1 (en) * 1993-08-13 2003-05-07 Irvine Sensors Corporation Stack of ic chips as substitute for single ic chip
US5502667A (en) * 1993-09-13 1996-03-26 International Business Machines Corporation Integrated multichip memory module structure
EP0721662A1 (en) * 1993-09-30 1996-07-17 Kopin Corporation Three-dimensional processor using transferred thin film circuits
US5385909A (en) * 1993-11-22 1995-01-31 American Home Products Corporation Heterocyclic esters of rapamycin
JPH07176688A (ja) * 1993-12-20 1995-07-14 Mitsubishi Electric Corp 半導体集積回路
JPH07230696A (ja) * 1993-12-21 1995-08-29 Toshiba Corp 半導体記憶装置
US5457879A (en) * 1994-01-04 1995-10-17 Motorola, Inc. Method of shaping inter-substrate plug and receptacles interconnects
US5380681A (en) * 1994-03-21 1995-01-10 United Microelectronics Corporation Three-dimensional multichip package and methods of fabricating
US5480842A (en) * 1994-04-11 1996-01-02 At&T Corp. Method for fabricating thin, strong, and flexible die for smart cards
US5543791A (en) * 1994-06-16 1996-08-06 International Business Machines Non-volatile parallel-to-serial converter system utilizing thin-film floating-gate, amorphous transistors
WO1996001497A1 (de) 1994-07-05 1996-01-18 Siemens Aktiengesellschaft Verfahren zur herstellung einer dreidimensionalen schaltungsanordnung
US5880010A (en) 1994-07-12 1999-03-09 Sun Microsystems, Inc. Ultrathin electronics
IT1274925B (it) * 1994-09-21 1997-07-29 Texas Instruments Italia Spa Architettura di memoria per dischi a stato solido
DE4433833A1 (de) * 1994-09-22 1996-03-28 Fraunhofer Ges Forschung Verfahren zur Herstellung einer dreidimensionalen integrierten Schaltung unter Erreichung hoher Systemausbeuten
DE4433845A1 (de) * 1994-09-22 1996-03-28 Fraunhofer Ges Forschung Verfahren zur Herstellung einer dreidimensionalen integrierten Schaltung
US5567654A (en) * 1994-09-28 1996-10-22 International Business Machines Corporation Method and workpiece for connecting a thin layer to a monolithic electronic module's surface and associated module packaging
JPH08134212A (ja) * 1994-11-14 1996-05-28 Hitachi Ltd 配線構造体とその製造法
US5715144A (en) * 1994-12-30 1998-02-03 International Business Machines Corporation Multi-layer, multi-chip pyramid and circuit board structure
US5532955A (en) * 1994-12-30 1996-07-02 Mosaid Technologies Incorporated Method of multilevel dram sense and restore
US5534465A (en) * 1995-01-10 1996-07-09 At&T Corp. Method for making multichip circuits using active semiconductor substrates
US6107213A (en) * 1996-02-01 2000-08-22 Sony Corporation Method for making thin film semiconductor
US5703747A (en) * 1995-02-22 1997-12-30 Voldman; Steven Howard Multichip semiconductor structures with interchip electrostatic discharge protection, and fabrication methods therefore
JPH08264712A (ja) * 1995-03-27 1996-10-11 Matsushita Electron Corp 半導体装置
US5733814A (en) * 1995-04-03 1998-03-31 Aptek Industries, Inc. Flexible electronic card and method
US5514628A (en) * 1995-05-26 1996-05-07 Texas Instruments Incorporated Two-step sinter method utilized in conjunction with memory cell replacement by redundancies
US5534466A (en) 1995-06-01 1996-07-09 International Business Machines Corporation Method of making area direct transfer multilayer thin film structure
WO1996041264A1 (en) * 1995-06-07 1996-12-19 International Business Machines Corporation Static wordline redundancy memory device
US6020257A (en) * 1995-06-07 2000-02-01 Elm Technology Corporation Membrane dielectric isolation IC fabrication
US5620915A (en) * 1995-07-12 1997-04-15 United Microelectronics Corporation Method for bypassing null-code sections for read-only memory by access line control
JP3614522B2 (ja) * 1995-08-03 2005-01-26 シャープ株式会社 半導体記憶装置
JPH0992781A (ja) * 1995-09-22 1997-04-04 Internatl Business Mach Corp <Ibm> 統合した回路を有するマルチチップ半導体構造およびその製造方法
JPH09152979A (ja) * 1995-09-28 1997-06-10 Matsushita Electric Ind Co Ltd 半導体装置
US5627112A (en) * 1995-11-13 1997-05-06 Rockwell International Corporation Method of making suspended microstructures
US5918794A (en) * 1995-12-28 1999-07-06 Lucent Technologies Inc. Solder bonding of dense arrays of microminiature contact pads
US6094733A (en) * 1996-01-25 2000-07-25 Kabushiki Kaisha Toshiba Method for testing semiconductor memory devices, and apparatus and system for testing semiconductor memory devices
KR0155081B1 (ko) * 1996-04-08 1998-12-01 김광호 강제 멈춤 기능을 갖는 프린터 및 강제 멈춤 방법
US5719437A (en) * 1996-04-19 1998-02-17 Lucent Technologies Inc. Smart cards having thin die
US5882532A (en) * 1996-05-31 1999-03-16 Hewlett-Packard Company Fabrication of single-crystal silicon structures using sacrificial-layer wafer bonding
US5870176A (en) * 1996-06-19 1999-02-09 Sandia Corporation Maskless lithography
US5656552A (en) * 1996-06-24 1997-08-12 Hudak; John James Method of making a thin conformal high-yielding multi-chip module
US6027958A (en) * 1996-07-11 2000-02-22 Kopin Corporation Transferred flexible integrated circuit
US5760478A (en) * 1996-08-20 1998-06-02 International Business Machines Corporation Clock skew minimization system and method for integrated circuits
EP2270845A3 (en) * 1996-10-29 2013-04-03 Invensas Corporation Integrated circuits and methods for their fabrication
US5729896A (en) * 1996-10-31 1998-03-24 International Business Machines Corporation Method for attaching a flip chip on flexible circuit carrier using chip with metallic cap on solder
US6045625A (en) * 1996-12-06 2000-04-04 Texas Instruments Incorporated Buried oxide with a thermal expansion matching layer for SOI
JPH10209371A (ja) * 1997-01-17 1998-08-07 Mitsubishi Electric Corp Ｉｃメモリ
US6551857B2 (en) * 1997-04-04 2003-04-22 Elm Technology Corporation Three dimensional structure integrated circuits
US5915167A (en) * 1997-04-04 1999-06-22 Elm Technology Corporation Three dimensional structure memory
JP4032454B2 (ja) * 1997-06-27 2008-01-16 ソニー株式会社 三次元回路素子の製造方法
NO308149B1 (no) * 1998-06-02 2000-07-31 Thin Film Electronics Asa Skalerbar, integrert databehandlingsinnretning
JP4063944B2 (ja) * 1998-03-13 2008-03-19 独立行政法人科学技術振興機構 ３次元半導体集積回路装置の製造方法
JP4006081B2 (ja) * 1998-03-19 2007-11-14 株式会社ルネサステクノロジ 半導体装置の製造方法
US6197456B1 (en) * 1999-01-19 2001-03-06 Lsi Logic Corporation Mask having an arbitrary complex transmission function
JP4413306B2 (ja) * 1999-03-23 2010-02-10 株式会社東芝 半導体記憶装置
US6335491B1 (en) * 2000-02-08 2002-01-01 Lsi Logic Corporation Interposer for semiconductor package assembly
WO2001071806A1 (fr) * 2000-03-21 2001-09-27 Mitsubishi Denki Kabushiki Kaisha Dispositif a semi-conducteur, procede de realisation d'un dispositif electronique, dispositif electronique, et terminal d'informations portable
US6236602B1 (en) * 2000-05-25 2001-05-22 Robert Patti Dynamic configuration of storage arrays
JP4635333B2 (ja) * 2000-12-14 2011-02-23 ソニー株式会社 半導体装置の製造方法
KR20030018642A (ko) * 2001-08-30 2003-03-06 주식회사 하이닉스반도체 스택 칩 모듈
US6914324B2 (en) * 2001-10-26 2005-07-05 Staktek Group L.P. Memory expansion and chip scale stacking system and method
US7402897B2 (en) * 2002-08-08 2008-07-22 Elm Technology Corporation Vertical system integration

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9748114B2 (en) 2010-09-30 2017-08-29 International Business Machines Corporation Method for forming through silicon via in N+ epitaxy wafers with reduced parasitic capacitance

Also Published As

Publication number Publication date
JP2008028407A (ja) 2008-02-07
JP5468739B2 (ja) 2014-04-09
EP1986233A2 (en) 2008-10-29
JP5690215B2 (ja) 2015-03-25
US5915167A (en) 1999-06-22
CN1268925A (zh) 2000-10-04
EP2276035A3 (en) 2014-03-12
US7193239B2 (en) 2007-03-20
CN101188235B (zh) 2010-10-06
US20040097008A1 (en) 2004-05-20
EP1986233A3 (en) 2010-08-04
CN1525549A (zh) 2004-09-01
CN102005453A (zh) 2011-04-06
CN100409425C (zh) 2008-08-06
JP2008172254A (ja) 2008-07-24
EP0975472A4 (en) 2007-07-04
KR100711820B1 (ko) 2007-05-02
CN102005453B (zh) 2014-05-07
TW412854B (en) 2000-11-21
CN1525485A (zh) 2004-09-01
EP2276035A2 (en) 2011-01-19
US6208545B1 (en) 2001-03-27
JP2002516033A (ja) 2002-05-28
JP2008166831A (ja) 2008-07-17
KR100785821B1 (ko) 2007-12-13
US6632706B1 (en) 2003-10-14
EP0975472A1 (en) 2000-02-02
US20090067210A1 (en) 2009-03-12
KR20060088907A (ko) 2006-08-07
KR20010005983A (ko) 2001-01-15
CN101188235A (zh) 2008-05-28
JP2008166832A (ja) 2008-07-17
KR20050107819A (ko) 2005-11-15
JP5207747B2 (ja) 2013-06-12
CN1525485B (zh) 2012-12-05
JP5207684B2 (ja) 2013-06-12
US6133640A (en) 2000-10-17
KR100639752B1 (ko) 2006-10-27
JP2011181176A (ja) 2011-09-15
WO1998045130A1 (en) 1998-10-15

Similar Documents

Publication Publication Date Title
CN1155050C (zh) 三维结构存储器的制造方法
US8035233B2 (en) Adjacent substantially flexible substrates having integrated circuits that are bonded together by non-polymeric layer

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C19 Lapse of patent right due to non-payment of the annual fee
CF01 Termination of patent right due to non-payment of annual fee