CN1183545C - 存储元件装置及其制造方法 - Google Patents
存储元件装置及其制造方法 Download PDFInfo
- Publication number
- CN1183545C CN1183545C CNB008068275A CN00806827A CN1183545C CN 1183545 C CN1183545 C CN 1183545C CN B008068275 A CNB008068275 A CN B008068275A CN 00806827 A CN00806827 A CN 00806827A CN 1183545 C CN1183545 C CN 1183545C
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- CN
- China
- Prior art keywords
- lead
- layer
- memory cells
- insulation course
- metallized plane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 210000000352 storage cell Anatomy 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title description 10
- 238000003860 storage Methods 0.000 claims abstract description 34
- 238000009413 insulation Methods 0.000 claims description 42
- 230000005294 ferromagnetic effect Effects 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 20
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 238000009825 accumulation Methods 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229910021332 silicide Inorganic materials 0.000 claims description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- BFRGSJVXBIWTCF-UHFFFAOYSA-N niobium monoxide Inorganic materials [Nb]=O BFRGSJVXBIWTCF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 230000002459 sustained effect Effects 0.000 claims description 2
- 238000001465 metallisation Methods 0.000 abstract description 6
- 210000004027 cell Anatomy 0.000 abstract 1
- 238000003491 array Methods 0.000 description 23
- 230000000694 effects Effects 0.000 description 22
- 238000005516 engineering process Methods 0.000 description 14
- 230000005291 magnetic effect Effects 0.000 description 14
- 238000005530 etching Methods 0.000 description 13
- 230000005415 magnetization Effects 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 230000000452 restraining effect Effects 0.000 description 8
- 229910000906 Bronze Inorganic materials 0.000 description 7
- 239000010974 bronze Substances 0.000 description 7
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 230000002349 favourable effect Effects 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 238000013517 stratification Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000002161 passivation Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Memories (AREA)
- Mram Or Spin Memory Techniques (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19908518.8 | 1999-02-26 | ||
DE19908518 | 1999-02-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1349650A CN1349650A (zh) | 2002-05-15 |
CN1183545C true CN1183545C (zh) | 2005-01-05 |
Family
ID=7899068
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB008068275A Expired - Fee Related CN1183545C (zh) | 1999-02-26 | 2000-02-01 | 存储元件装置及其制造方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US6630703B2 (zh) |
EP (1) | EP1157388B1 (zh) |
JP (1) | JP4138254B2 (zh) |
KR (1) | KR100450468B1 (zh) |
CN (1) | CN1183545C (zh) |
DE (1) | DE50000341D1 (zh) |
TW (1) | TW462051B (zh) |
WO (1) | WO2000052701A1 (zh) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1157388B1 (de) | 1999-02-26 | 2002-07-31 | Infineon Technologies AG | Speicherzellenanordnung und verfahren zu deren herstellung |
US6392922B1 (en) * | 2000-08-14 | 2002-05-21 | Micron Technology, Inc. | Passivated magneto-resistive bit structure and passivation method therefor |
DE10043159A1 (de) | 2000-09-01 | 2002-03-21 | Infineon Technologies Ag | Speicherzellenanordnung und Verfahren zu deren Herstellung |
DE10050076C2 (de) * | 2000-10-10 | 2003-09-18 | Infineon Technologies Ag | Verfahren zur Herstellung einer ferromagnetischen Struktur und ferromagnetisches Bauelement |
US6555858B1 (en) * | 2000-11-15 | 2003-04-29 | Motorola, Inc. | Self-aligned magnetic clad write line and its method of formation |
US6440753B1 (en) * | 2001-01-24 | 2002-08-27 | Infineon Technologies North America Corp. | Metal hard mask for ILD RIE processing of semiconductor memory devices to prevent oxidation of conductive lines |
DE10103868A1 (de) * | 2001-01-30 | 2002-08-22 | Bosch Gmbh Robert | GMR-Struktur und Verfahren zu deren Herstellung |
US6358756B1 (en) * | 2001-02-07 | 2002-03-19 | Micron Technology, Inc. | Self-aligned, magnetoresistive random-access memory (MRAM) structure utilizing a spacer containment scheme |
JP3892736B2 (ja) * | 2001-03-29 | 2007-03-14 | 株式会社東芝 | 半導体記憶装置 |
JP2002299575A (ja) | 2001-03-29 | 2002-10-11 | Toshiba Corp | 半導体記憶装置 |
DE10124366A1 (de) * | 2001-05-18 | 2002-11-28 | Infineon Technologies Ag | Verfahren zum Herstellen einer Halbleiterspeichereinrichtung |
DE10125594A1 (de) | 2001-05-25 | 2002-12-05 | Infineon Technologies Ag | Halbleiterspeichereinrichtung sowie Verfahren zu deren Herstellung |
US6485989B1 (en) | 2001-08-30 | 2002-11-26 | Micron Technology, Inc. | MRAM sense layer isolation |
US6751149B2 (en) * | 2002-03-22 | 2004-06-15 | Micron Technology, Inc. | Magnetic tunneling junction antifuse device |
US6783995B2 (en) * | 2002-04-30 | 2004-08-31 | Micron Technology, Inc. | Protective layers for MRAM devices |
US6784091B1 (en) * | 2003-06-05 | 2004-08-31 | International Business Machines Corporation | Maskless array protection process flow for forming interconnect vias in magnetic random access memory devices |
US6885577B2 (en) * | 2003-06-18 | 2005-04-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Magnetic RAM cell device and array architecture |
US7112454B2 (en) * | 2003-10-14 | 2006-09-26 | Micron Technology, Inc. | System and method for reducing shorting in memory cells |
JP2005260082A (ja) * | 2004-03-12 | 2005-09-22 | Toshiba Corp | 磁気ランダムアクセスメモリ |
JP4131869B2 (ja) * | 2005-01-31 | 2008-08-13 | Tdk株式会社 | 電流センサ |
US8698490B2 (en) * | 2010-12-15 | 2014-04-15 | Infineon Technologies Ag | Magnetoresistive angle sensors having conductors arranged in multiple planes |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5587943A (en) * | 1995-02-13 | 1996-12-24 | Integrated Microtransducer Electronics Corporation | Nonvolatile magnetoresistive memory with fully closed flux operation |
KR100262282B1 (ko) * | 1996-04-30 | 2000-10-02 | 니시무로 타이죠 | 자기 저항 효과 소자 |
US5920500A (en) * | 1996-08-23 | 1999-07-06 | Motorola, Inc. | Magnetic random access memory having stacked memory cells and fabrication method therefor |
US5861328A (en) * | 1996-10-07 | 1999-01-19 | Motorola, Inc. | Method of fabricating GMR devices |
US5915167A (en) * | 1997-04-04 | 1999-06-22 | Elm Technology Corporation | Three dimensional structure memory |
EP1157388B1 (de) | 1999-02-26 | 2002-07-31 | Infineon Technologies AG | Speicherzellenanordnung und verfahren zu deren herstellung |
-
2000
- 2000-02-01 EP EP00910516A patent/EP1157388B1/de not_active Expired - Lifetime
- 2000-02-01 WO PCT/DE2000/000305 patent/WO2000052701A1/de active IP Right Grant
- 2000-02-01 DE DE50000341T patent/DE50000341D1/de not_active Expired - Lifetime
- 2000-02-01 KR KR10-2001-7010933A patent/KR100450468B1/ko not_active IP Right Cessation
- 2000-02-01 CN CNB008068275A patent/CN1183545C/zh not_active Expired - Fee Related
- 2000-02-01 JP JP2000603042A patent/JP4138254B2/ja not_active Expired - Fee Related
- 2000-02-22 TW TW089103057A patent/TW462051B/zh not_active IP Right Cessation
-
2001
- 2001-08-27 US US09/940,011 patent/US6630703B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
TW462051B (en) | 2001-11-01 |
EP1157388A1 (de) | 2001-11-28 |
EP1157388B1 (de) | 2002-07-31 |
JP2002538614A (ja) | 2002-11-12 |
KR100450468B1 (ko) | 2004-09-30 |
DE50000341D1 (de) | 2002-09-05 |
US20020041514A1 (en) | 2002-04-11 |
WO2000052701A1 (de) | 2000-09-08 |
US6630703B2 (en) | 2003-10-07 |
JP4138254B2 (ja) | 2008-08-27 |
KR20010103779A (ko) | 2001-11-23 |
CN1349650A (zh) | 2002-05-15 |
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Legal Events
Date | Code | Title | Description |
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C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee |
Owner name: INFINEON TECHNOLOGIES AG Free format text: FORMER NAME: INFENNIAN TECHNOLOGIES AG |
|
CP01 | Change in the name or title of a patent holder |
Address after: Munich, Germany Patentee after: Infineon Technologies AG Address before: Munich, Germany Patentee before: INFINEON TECHNOLOGIES AG |
|
TR01 | Transfer of patent right |
Effective date of registration: 20130711 Address after: Munich, Germany Patentee after: QIMONDA AG Address before: Munich, Germany Patentee before: Infineon Technologies AG |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160113 Address after: German Berg, Laura Ibiza Patentee after: Infineon Technologies AG Address before: Munich, Germany Patentee before: QIMONDA AG |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20050105 Termination date: 20160201 |
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CF01 | Termination of patent right due to non-payment of annual fee |