JP2011181176A - 情報処理方法、積層型集積回路メモリ - Google Patents
情報処理方法、積層型集積回路メモリ Download PDFInfo
- Publication number
- JP2011181176A JP2011181176A JP2011119212A JP2011119212A JP2011181176A JP 2011181176 A JP2011181176 A JP 2011181176A JP 2011119212 A JP2011119212 A JP 2011119212A JP 2011119212 A JP2011119212 A JP 2011119212A JP 2011181176 A JP2011181176 A JP 2011181176A
- Authority
- JP
- Japan
- Prior art keywords
- memory
- circuit
- substrate
- layer
- data
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015654 memory Effects 0.000 title claims abstract description 239
- 238000003672 processing method Methods 0.000 title description 6
- 230000010365 information processing Effects 0.000 title description 3
- 239000000758 substrate Substances 0.000 claims abstract description 92
- 238000000034 method Methods 0.000 claims abstract description 48
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- 230000006870 function Effects 0.000 claims description 24
- 238000012545 processing Methods 0.000 claims description 24
- 238000012360 testing method Methods 0.000 claims description 14
- 238000003860 storage Methods 0.000 claims description 10
- 238000013144 data compression Methods 0.000 claims description 5
- 238000007726 management method Methods 0.000 claims description 4
- 230000001133 acceleration Effects 0.000 claims description 3
- 208000011580 syndromic disease Diseases 0.000 claims description 3
- 230000006837 decompression Effects 0.000 claims description 2
- 230000002950 deficient Effects 0.000 claims 2
- 239000010410 layer Substances 0.000 abstract description 91
- 238000004519 manufacturing process Methods 0.000 abstract description 41
- 239000011229 interlayer Substances 0.000 abstract description 9
- 238000005304 joining Methods 0.000 abstract description 8
- 238000005516 engineering process Methods 0.000 abstract description 7
- 230000008569 process Effects 0.000 abstract description 7
- 238000000926 separation method Methods 0.000 abstract description 6
- 239000010419 fine particle Substances 0.000 abstract description 5
- 230000010354 integration Effects 0.000 abstract description 5
- 230000002829 reductive effect Effects 0.000 abstract description 3
- 238000003475 lamination Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 21
- 239000002184 metal Substances 0.000 description 21
- 239000000463 material Substances 0.000 description 13
- 238000013461 design Methods 0.000 description 11
- 235000012431 wafers Nutrition 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000010408 film Substances 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000013519 translation Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- -1 for example Inorganic materials 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 230000036963 noncompetitive effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/50—Peripheral circuit region structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
- G11C29/846—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by choosing redundant lines at an output stage
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/04—Supports for storage elements, e.g. memory modules; Mounting or fixing of storage elements on such supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/44—Indication or identification of errors, e.g. for repair
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
- G11C29/81—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a hierarchical redundancy scheme
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
- G11C29/848—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by adjacent switching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29109—Indium [In] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29111—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29116—Lead [Pb] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/29118—Zinc [Zn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/29124—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29144—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29147—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29155—Nickel [Ni] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/29166—Titanium [Ti] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/29169—Platinum [Pt] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
- H01L2224/808—Bonding techniques
- H01L2224/80801—Soldering or alloying
- H01L2224/8082—Diffusion bonding
- H01L2224/8083—Solid-solid interdiffusion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/977—Thinning or removal of substrate
Abstract
【解決手段】各層が別々に最適化されるように、別々の層(103)上へのメモリ回路(103)および制御論理回路(101)の物理的分離が可能な三次元(3DS)メモリ(100)。幾つかのメモリ回路(103)について1つの制御論理回路(101)で十分であり、コストを低減できる。3DSメモリ(100)の製造は、メモリ回路(103)を50μm以下の厚さに薄肉化する工程と、該メモリ回路を、ウェーハ基板形態のまま回路積層体に接合する工程とを有する。微粒子の高密度層間垂直バス相互接続部(105)が使用されている。3DSメモリ(100)製造方法は、幾つかの性能および物理的サイズ効率を可能にしかつ確立された半導体加工技術により実施される。
【選択図】 図1a
Description
3DSメモリ回路には2つの主要な製造方法がある。しかしながら、2つの3DSメモリ製造方法は、剛性支持基板すなわち共通基板(基板自体も回路部品層にすることは任意である)上への多数の回路基板の熱拡散金属接合(熱圧縮接合とも呼ばれる)である共通目的を有する。
この製造順序は、幾つかの回路層が共通基板すなわち支持基板に接合され、次に所定位置で薄肉化されることを想定する。図1aには、この結果得られる3DSメモリ回路の一例が示されている。
この製造順序は、回路基板が最初にトランスファ基板に接合され、薄肉化され、次に回路積層体の1つの層として共通基板に接合されることを想定する。次に、トランスファ基板が離型される。この方法は、方法Aに比べて、最終回路積層体に接合される前に基板を薄肉化できるという長所を有し、かつ基板の回路層の同時薄肉化および垂直相互接続加工を行なうことができる。
Claims (32)
- 半導体基板、メモリコントローラ層および複数のメモリ層を有して構成される積層形集積回路メモリを用いて情報処理する方法であって、
該方法は、
メモリアクセスを開始するステップと、
該メモリコントローラ層と、複数のメモリブロックのそれぞれの内の選択された格納位置との間でデータを垂直方向に独立してルーティングするステップとを包含する、方法。 - 1つのメモリアクセス中に、前記複数のメモリ層からデータにアクセスするステップをさらに包含する、請求項1に記載の方法。
- 欠陥部分を有する1つのメモリ層からのデータの代わりに、他のメモリ層からのデータが用いられる、請求項2に記載の方法。
- 1つのメモリ層からのデータが用いられて、他のメモリ層からのデータに対してECC処理を実行する、請求項2に記載の方法。
- 前記選択された格納位置からのデータを前記メモリコントローラ層内で受信するステップと、
各選択された格納位置に対して、少なくとも4つの電圧レベルを区別することにより、少なくとも2つのデータビットを生成するステップとをさらに包含する、請求項1に記載の方法。 - データを前記メモリコントローラ層内で受信するステップと、
該データをデコンプレッションするステップとをさらに包含する、請求項1に記載の方法。 - データを前記メモリコントローラ層内で圧縮するステップと、
該データを前記選択されたメモリ位置に書き込むステップとをさらに包含する、請求項1に記載の方法。 - メモリ回路およびメモリコントローラ回路のうちの一方が形成された第1の基板と、
前記メモリ回路および該メモリコントローラ回路の他方が形成され、該第1の基板にボンディングされている少なくとも1つの実質的に可撓性の基板と、を備えた積層形集積回路メモリであって、
前記第1の基板と前記実質的に可塑性の基板の少なくとも1つが、当該基板の第1の表面から反対側の表面に伸びる垂直相互接続部を有し、
前記垂直相互接続部が、導電性中心部分と、前記導電性中心部分の周囲に位置する絶縁性部分とを有することを特徴とする積層形集積回路メモリ。 - 前記第1の基板には前記メモリ回路が形成されており、前記第1の基板は、メモリ回路基板の積層体の一部であり、前記実質的に可撓性の基板には前記メモリコントローラ回路が形成されている、請求項8に記載の装置。
- 前記第1の基板および前記実質的に可撓性の基板は、単体化されたダイであり、前記実質的に可撓性の基板は、前記第1の基板より大きい領域を有する、請求項9に記載の装置。
- 前記実質的に可撓性の基板には、前記メモリコントローラ回路から離れて付加回路が形成されている、請求項10に記載の装置。
- 前記付加回路は、グラフィックディスプレイ・サブシステムの一部である、請求項11に記載の装置。
- 記付加回路は、マイクロプロセッサを含む、請求項11に記載の装置。
- 前記実質的に可撓性の基板は、メモリI/Oパッドを有する、請求項8に記載の装置。
- 前記メモリ回路は、前記可撓性の基板の上面に近接して形成されており、該上面は、前記第1の基板にボンディングされており、前記メモリI/Oパッドは、該可撓性の基板の反対側裏面に近接して形成されている、請求項14に記載の装置。
- 前記メモリ回路および前記メモリコントローラ回路は、前記垂直相互接続部によって結合されている、請求項8に記載の装置。
- 前記垂直相互接続部は、100μm未満のピッチで形成された垂直相互接続部を含む、請求項16に記載の装置。
- 前記垂直相互接続部のうちの少なくともいくつかは、二次元で配列されている、請求項16に記載の装置。
- 前記メモリ回路は、二次元配列のメモリブロックを含み、各メモリブロックには、垂直相互接続部の配列が近接して形成されており、該垂直相互接続部の配列は、該メモリブロックを前記メモリコントローラに結合する第1のポートを形成する、請求項17に記載の装置。
- 少なくともいくつかのメモリブロックには、前記垂直相互接続部の配列が近接して形成されており、該垂直相互接続部の配列は、前記メモリブロックを前記メモリコントローラに結合する第2のポートを形成する、請求項19に記載の装置。
- 前記メモリ回路のうちの少なくとも1つは、冗長メモリ位置を提供する、請求項8に記載の装置。
- 冗長メモリ回路が形成された実質的に可撓性の付加基板をさらに備えている、請求項21に記載の装置。
- 前記メモリコントローラ回路は、ECC論理を含み、ECCシンドロームを前記冗長メモリ回路内に格納するようにプログラムされている、請求項22に記載の装置。
- 前記メモリコントローラ回路は、前記メモリ回路を試験するための論理を含む、請求項21に記載の装置。
- 前記メモリコントローラ回路は、前記メモリ回路内の欠陥メモリ位置を冗長メモリ位置と置き換えるようにプログラムされている、請求項24に記載の装置。
- 前記メモリコントローラ回路は、バーチャルメモリ管理、間接アドレシング、内容アドレシング、データ圧縮、データデコンプレッション、グラフィックアクセラレーション、オーディオエンコーディング、オーディオデコーディング、ビデオエンコーディング、ビデオデコーディング、音声認識、筆跡認識、電力管理およびデータベース処理の機能のうちの少なくとも1つを実行するための論理を含む、請求項8に記載の装置。
- 冗長メモリコントローラが形成され、前記実質的に可撓性の基板にボンディングされている第2の基板をさらに備えている、請求項8に記載の装置。
- マイクロプロセッサが形成され、前記実質的に可撓性の基板にボンディングされている第2の基板をさらに備えている、請求項8に記載の装置。
- 前記メモリコントローラ回路は、前記メモリ回路のデータラインに結合されているセンスアンプを含む、請求項8に記載の装置。
- 前記センスアンプは、2つより多い信号レベルを区別し、各センスアンプは、複数レベルの出力信号を生成する、請求項29に記載の装置。
- 前記センスアンプは、10ns以下のスイッチング速度を示すようにサイズ化されている、請求項29に記載の装置。
- 前記第1の基板と前記実質的に可塑性の基板の少なくとも1つが、5×108ダイン/cm2以下の応力の誘電体層で構成されていることを特徴とする請求項8に記載の装置
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/835,190 US5915167A (en) | 1997-04-04 | 1997-04-04 | Three dimensional structure memory |
US08/835,190 | 1997-04-04 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008013188A Division JP5207747B2 (ja) | 1997-04-04 | 2008-01-23 | ランダムアクセスメモリを形成する方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011181176A true JP2011181176A (ja) | 2011-09-15 |
JP5690215B2 JP5690215B2 (ja) | 2015-03-25 |
Family
ID=25268870
Family Applications (6)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP54303198A Withdrawn JP2002516033A (ja) | 1997-04-04 | 1998-04-03 | 三次元構造メモリ |
JP2007211038A Expired - Fee Related JP5207684B2 (ja) | 1997-04-04 | 2007-08-13 | 情報処理方法 |
JP2008013189A Expired - Fee Related JP5468739B2 (ja) | 1997-04-04 | 2008-01-23 | 複数の集積回路の間に相互接続部を形成する方法 |
JP2008013190A Pending JP2008172254A (ja) | 1997-04-04 | 2008-01-23 | 情報処理方法 |
JP2008013188A Expired - Fee Related JP5207747B2 (ja) | 1997-04-04 | 2008-01-23 | ランダムアクセスメモリを形成する方法 |
JP2011119212A Expired - Fee Related JP5690215B2 (ja) | 1997-04-04 | 2011-05-27 | 積層型集積回路メモリ |
Family Applications Before (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP54303198A Withdrawn JP2002516033A (ja) | 1997-04-04 | 1998-04-03 | 三次元構造メモリ |
JP2007211038A Expired - Fee Related JP5207684B2 (ja) | 1997-04-04 | 2007-08-13 | 情報処理方法 |
JP2008013189A Expired - Fee Related JP5468739B2 (ja) | 1997-04-04 | 2008-01-23 | 複数の集積回路の間に相互接続部を形成する方法 |
JP2008013190A Pending JP2008172254A (ja) | 1997-04-04 | 2008-01-23 | 情報処理方法 |
JP2008013188A Expired - Fee Related JP5207747B2 (ja) | 1997-04-04 | 2008-01-23 | ランダムアクセスメモリを形成する方法 |
Country Status (7)
Country | Link |
---|---|
US (6) | US5915167A (ja) |
EP (3) | EP1986233A3 (ja) |
JP (6) | JP2002516033A (ja) |
KR (3) | KR100711820B1 (ja) |
CN (5) | CN101188235B (ja) |
TW (1) | TW412854B (ja) |
WO (1) | WO1998045130A1 (ja) |
Families Citing this family (1246)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5354695A (en) | 1992-04-08 | 1994-10-11 | Leedy Glenn J | Membrane dielectric isolation IC fabrication |
US6714625B1 (en) * | 1992-04-08 | 2004-03-30 | Elm Technology Corporation | Lithography device for semiconductor circuit pattern generation |
US8018058B2 (en) * | 2004-06-21 | 2011-09-13 | Besang Inc. | Semiconductor memory device |
US7633162B2 (en) * | 2004-06-21 | 2009-12-15 | Sang-Yun Lee | Electronic circuit with embedded memory |
US7800199B2 (en) * | 2003-06-24 | 2010-09-21 | Oh Choonsik | Semiconductor circuit |
US8058142B2 (en) | 1996-11-04 | 2011-11-15 | Besang Inc. | Bonded semiconductor structure and method of making the same |
US20050280155A1 (en) * | 2004-06-21 | 2005-12-22 | Sang-Yun Lee | Semiconductor bonding and layer transfer method |
US5915167A (en) | 1997-04-04 | 1999-06-22 | Elm Technology Corporation | Three dimensional structure memory |
US6551857B2 (en) | 1997-04-04 | 2003-04-22 | Elm Technology Corporation | Three dimensional structure integrated circuits |
FR2771852B1 (fr) * | 1997-12-02 | 1999-12-31 | Commissariat Energie Atomique | Procede de transfert selectif d'une microstructure, formee sur un substrat initial, vers un substrat final |
US6198168B1 (en) | 1998-01-20 | 2001-03-06 | Micron Technologies, Inc. | Integrated circuits using high aspect ratio vias through a semiconductor wafer and method for forming same |
JPH11204742A (ja) * | 1998-01-20 | 1999-07-30 | Sony Corp | メモリ及び情報機器 |
US6150188A (en) * | 1998-02-26 | 2000-11-21 | Micron Technology Inc. | Integrated circuits using optical fiber interconnects formed through a semiconductor wafer and methods for forming same |
US6090636A (en) * | 1998-02-26 | 2000-07-18 | Micron Technology, Inc. | Integrated circuits using optical waveguide interconnects formed through a semiconductor wafer and methods for forming same |
US6329712B1 (en) | 1998-03-25 | 2001-12-11 | Micron Technology, Inc. | High density flip chip memory arrays |
US6281042B1 (en) | 1998-08-31 | 2001-08-28 | Micron Technology, Inc. | Structure and method for a high performance electronic packaging assembly |
US6392296B1 (en) | 1998-08-31 | 2002-05-21 | Micron Technology, Inc. | Silicon interposer with optical connections |
US6219237B1 (en) | 1998-08-31 | 2001-04-17 | Micron Technology, Inc. | Structure and method for an electronic assembly |
US6586835B1 (en) * | 1998-08-31 | 2003-07-01 | Micron Technology, Inc. | Compact system module with built-in thermoelectric cooling |
US6483736B2 (en) * | 1998-11-16 | 2002-11-19 | Matrix Semiconductor, Inc. | Vertically stacked field programmable nonvolatile memory and method of fabrication |
US6122187A (en) | 1998-11-23 | 2000-09-19 | Micron Technology, Inc. | Stacked integrated circuits |
US6255852B1 (en) | 1999-02-09 | 2001-07-03 | Micron Technology, Inc. | Current mode signal interconnects and CMOS amplifier |
KR100450468B1 (ko) * | 1999-02-26 | 2004-09-30 | 인피니언 테크놀로지스 아게 | 기억 셀 장치 및 그의 제조 방법 |
US6849480B1 (en) | 1999-05-07 | 2005-02-01 | Seagate Technology Llc | Surface mount IC stacking method and device |
US6903434B2 (en) * | 1999-05-20 | 2005-06-07 | Alliance Semiconductors | Method and apparatus for integrating flash EPROM and SRAM cells on a common substrate |
DE19928733A1 (de) * | 1999-06-23 | 2001-01-04 | Giesecke & Devrient Gmbh | Halbleiterspeicher-Chipmodul |
US7554829B2 (en) | 1999-07-30 | 2009-06-30 | Micron Technology, Inc. | Transmission lines for CMOS integrated circuits |
US6984571B1 (en) | 1999-10-01 | 2006-01-10 | Ziptronix, Inc. | Three dimensional device integration method and integrated device |
US6500694B1 (en) * | 2000-03-22 | 2002-12-31 | Ziptronix, Inc. | Three dimensional device integration method and integrated device |
US6259126B1 (en) * | 1999-11-23 | 2001-07-10 | International Business Machines Corporation | Low cost mixed memory integration with FERAM |
US6197663B1 (en) | 1999-12-07 | 2001-03-06 | Lucent Technologies Inc. | Process for fabricating integrated circuit devices having thin film transistors |
TW587252B (en) * | 2000-01-18 | 2004-05-11 | Hitachi Ltd | Semiconductor memory device and data processing device |
WO2001054117A1 (fr) * | 2000-01-20 | 2001-07-26 | Matsushita Electric Industrial Co., Ltd. | Tete em, procede de fabrication de cette tete, et dispositif d'enregistrement magnetique et de reproduction |
US6902987B1 (en) | 2000-02-16 | 2005-06-07 | Ziptronix, Inc. | Method for low temperature bonding and bonded structure |
US6888750B2 (en) * | 2000-04-28 | 2005-05-03 | Matrix Semiconductor, Inc. | Nonvolatile memory on SOI and compound semiconductor substrates and method of fabrication |
US8575719B2 (en) | 2000-04-28 | 2013-11-05 | Sandisk 3D Llc | Silicon nitride antifuse for use in diode-antifuse memory arrays |
US6956757B2 (en) | 2000-06-22 | 2005-10-18 | Contour Semiconductor, Inc. | Low cost high density rectifier matrix memory |
US6563133B1 (en) | 2000-08-09 | 2003-05-13 | Ziptronix, Inc. | Method of epitaxial-like wafer bonding at low temperature and bonded structure |
EP2988331B1 (en) | 2000-08-14 | 2019-01-09 | SanDisk Technologies LLC | Semiconductor memory device |
US6711043B2 (en) | 2000-08-14 | 2004-03-23 | Matrix Semiconductor, Inc. | Three-dimensional memory cache system |
US6765813B2 (en) | 2000-08-14 | 2004-07-20 | Matrix Semiconductor, Inc. | Integrated systems using vertically-stacked three-dimensional memory cells |
US6600173B2 (en) | 2000-08-30 | 2003-07-29 | Cornell Research Foundation, Inc. | Low temperature semiconductor layering and three-dimensional electronic circuits using the layering |
US6584541B2 (en) | 2000-09-15 | 2003-06-24 | Matrix Semiconductor, Inc. | Method for storing digital information in write-once memory array |
US20030120858A1 (en) * | 2000-09-15 | 2003-06-26 | Matrix Semiconductor, Inc. | Memory devices and methods for use therewith |
JP2002176137A (ja) | 2000-09-28 | 2002-06-21 | Toshiba Corp | 積層型半導体デバイス |
JP3934867B2 (ja) | 2000-09-29 | 2007-06-20 | 株式会社東芝 | 不揮発性半導体記憶装置および不揮発性半導体メモリシステム |
US6498088B1 (en) * | 2000-11-09 | 2002-12-24 | Micron Technology, Inc. | Stacked local interconnect structure and method of fabricating same |
US6377504B1 (en) * | 2000-12-12 | 2002-04-23 | Tachuon Semiconductor Corp | High-density memory utilizing multiplexers to reduce bit line pitch constraints |
US6591394B2 (en) * | 2000-12-22 | 2003-07-08 | Matrix Semiconductor, Inc. | Three-dimensional memory array and method for storing data bits and ECC bits therein |
US7352199B2 (en) | 2001-02-20 | 2008-04-01 | Sandisk Corporation | Memory card with enhanced testability and methods of making and using the same |
US6718432B1 (en) | 2001-03-22 | 2004-04-06 | Netlogic Microsystems, Inc. | Method and apparatus for transparent cascading of multiple content addressable memory devices |
US6521994B1 (en) * | 2001-03-22 | 2003-02-18 | Netlogic Microsystems, Inc. | Multi-chip module having content addressable memory |
US6897514B2 (en) * | 2001-03-28 | 2005-05-24 | Matrix Semiconductor, Inc. | Two mask floating gate EEPROM and method of making |
US7424201B2 (en) * | 2001-03-30 | 2008-09-09 | Sandisk 3D Llc | Method for field-programming a solid-state memory device with a digital media file |
US6748994B2 (en) * | 2001-04-11 | 2004-06-15 | Avery Dennison Corporation | Label applicator, method and label therefor |
WO2003009183A1 (fr) * | 2001-07-11 | 2003-01-30 | Riken | Procede de stockage de donnees d'entite integrant forme et quantite physique et programme de stockage |
US6762092B2 (en) * | 2001-08-08 | 2004-07-13 | Sandisk Corporation | Scalable self-aligned dual floating gate memory cell array and methods of forming the array |
US6843421B2 (en) | 2001-08-13 | 2005-01-18 | Matrix Semiconductor, Inc. | Molded memory module and method of making the module absent a substrate support |
US6525953B1 (en) | 2001-08-13 | 2003-02-25 | Matrix Semiconductor, Inc. | Vertically-stacked, field-programmable, nonvolatile memory and method of fabrication |
US6593624B2 (en) | 2001-09-25 | 2003-07-15 | Matrix Semiconductor, Inc. | Thin film transistors with vertically offset drain regions |
US6841813B2 (en) * | 2001-08-13 | 2005-01-11 | Matrix Semiconductor, Inc. | TFT mask ROM and method for making same |
EP1442869A4 (en) * | 2001-08-16 | 2008-12-24 | Riken | METHOD AND DEVICE FOR THE FAST MANUFACTURE OF PROTOTYPES USING V-CAD DATA |
GB0120113D0 (en) | 2001-08-17 | 2001-10-10 | Koninkl Philips Electronics Nv | Memory circuit |
US6759275B1 (en) | 2001-09-04 | 2004-07-06 | Megic Corporation | Method for making high-performance RF integrated circuits |
US6624485B2 (en) | 2001-11-05 | 2003-09-23 | Matrix Semiconductor, Inc. | Three-dimensional, mask-programmed read only memory |
US7101770B2 (en) * | 2002-01-30 | 2006-09-05 | Micron Technology, Inc. | Capacitive techniques to reduce noise in high speed interconnections |
US6649505B2 (en) | 2002-02-04 | 2003-11-18 | Matrix Semiconductor, Inc. | Method for fabricating and identifying integrated circuits and self-identifying integrated circuits |
US6731011B2 (en) | 2002-02-19 | 2004-05-04 | Matrix Semiconductor, Inc. | Memory module having interconnected and stacked integrated circuits |
US6853049B2 (en) * | 2002-03-13 | 2005-02-08 | Matrix Semiconductor, Inc. | Silicide-silicon oxide-semiconductor antifuse device and method of making |
US7235457B2 (en) | 2002-03-13 | 2007-06-26 | Micron Technology, Inc. | High permeability layered films to reduce noise in high speed interconnects |
US6639309B2 (en) * | 2002-03-28 | 2003-10-28 | Sandisk Corporation | Memory package with a controller on one side of a printed circuit board and memory on another side of the circuit board |
US6906361B2 (en) * | 2002-04-08 | 2005-06-14 | Guobiao Zhang | Peripheral circuits of electrically programmable three-dimensional memory |
EP1514309B1 (en) * | 2002-06-19 | 2013-11-27 | SanDisk Technologies Inc. | Deep wordline trench to shield cross coupling between adjacent cells of nand memory |
US6894930B2 (en) | 2002-06-19 | 2005-05-17 | Sandisk Corporation | Deep wordline trench to shield cross coupling between adjacent cells for scaled NAND |
US6768661B2 (en) * | 2002-06-27 | 2004-07-27 | Matrix Semiconductor, Inc. | Multiple-mode memory and method for forming same |
US6737675B2 (en) | 2002-06-27 | 2004-05-18 | Matrix Semiconductor, Inc. | High density 3D rail stack arrays |
AU2003255254A1 (en) * | 2002-08-08 | 2004-02-25 | Glenn J. Leedy | Vertical system integration |
US6908817B2 (en) * | 2002-10-09 | 2005-06-21 | Sandisk Corporation | Flash memory array with increased coupling between floating and control gates |
US7183120B2 (en) * | 2002-10-31 | 2007-02-27 | Honeywell International Inc. | Etch-stop material for improved manufacture of magnetic devices |
US6954394B2 (en) * | 2002-11-27 | 2005-10-11 | Matrix Semiconductor, Inc. | Integrated circuit and method for selecting a set of memory-cell-layer-dependent or temperature-dependent operating conditions |
US7800932B2 (en) * | 2005-09-28 | 2010-09-21 | Sandisk 3D Llc | Memory cell comprising switchable semiconductor memory element with trimmable resistance |
US7176064B2 (en) * | 2003-12-03 | 2007-02-13 | Sandisk 3D Llc | Memory cell comprising a semiconductor junction diode crystallized adjacent to a silicide |
US20070164388A1 (en) * | 2002-12-19 | 2007-07-19 | Sandisk 3D Llc | Memory cell comprising a diode fabricated in a low resistivity, programmed state |
US8008700B2 (en) * | 2002-12-19 | 2011-08-30 | Sandisk 3D Llc | Non-volatile memory cell with embedded antifuse |
US20050226067A1 (en) | 2002-12-19 | 2005-10-13 | Matrix Semiconductor, Inc. | Nonvolatile memory cell operating by increasing order in polycrystalline semiconductor material |
US7618850B2 (en) * | 2002-12-19 | 2009-11-17 | Sandisk 3D Llc | Method of making a diode read/write memory cell in a programmed state |
US7767499B2 (en) * | 2002-12-19 | 2010-08-03 | Sandisk 3D Llc | Method to form upward pointing p-i-n diodes having large and uniform current |
AU2003296988A1 (en) * | 2002-12-19 | 2004-07-29 | Matrix Semiconductor, Inc | An improved method for making high-density nonvolatile memory |
US7800933B2 (en) * | 2005-09-28 | 2010-09-21 | Sandisk 3D Llc | Method for using a memory cell comprising switchable semiconductor memory element with trimmable resistance |
US8637366B2 (en) * | 2002-12-19 | 2014-01-28 | Sandisk 3D Llc | Nonvolatile memory cell without a dielectric antifuse having high- and low-impedance states |
US7660181B2 (en) * | 2002-12-19 | 2010-02-09 | Sandisk 3D Llc | Method of making non-volatile memory cell with embedded antifuse |
US20060249753A1 (en) * | 2005-05-09 | 2006-11-09 | Matrix Semiconductor, Inc. | High-density nonvolatile memory array fabricated at low temperature comprising semiconductor diodes |
US7285464B2 (en) | 2002-12-19 | 2007-10-23 | Sandisk 3D Llc | Nonvolatile memory cell comprising a reduced height vertical diode |
US20100133695A1 (en) * | 2003-01-12 | 2010-06-03 | Sang-Yun Lee | Electronic circuit with embedded memory |
US7799675B2 (en) * | 2003-06-24 | 2010-09-21 | Sang-Yun Lee | Bonded semiconductor structure and method of fabricating the same |
US6806535B2 (en) * | 2003-01-22 | 2004-10-19 | Macronix International Co., Ltd. | Non-volatile memory and fabricating method thereof |
US6962835B2 (en) | 2003-02-07 | 2005-11-08 | Ziptronix, Inc. | Method for room temperature metal direct bonding |
US7383476B2 (en) * | 2003-02-11 | 2008-06-03 | Sandisk 3D Llc | System architecture and method for three-dimensional memory |
US7293286B2 (en) * | 2003-02-20 | 2007-11-06 | Bea Systems, Inc. | Federated management of content repositories |
JP4419049B2 (ja) * | 2003-04-21 | 2010-02-24 | エルピーダメモリ株式会社 | メモリモジュール及びメモリシステム |
US7109092B2 (en) | 2003-05-19 | 2006-09-19 | Ziptronix, Inc. | Method of room temperature covalent bonding |
US7511352B2 (en) * | 2003-05-19 | 2009-03-31 | Sandisk 3D Llc | Rail Schottky device and method of making |
US7105406B2 (en) * | 2003-06-20 | 2006-09-12 | Sandisk Corporation | Self aligned non-volatile memory cell and process for fabrication |
US7863748B2 (en) * | 2003-06-24 | 2011-01-04 | Oh Choonsik | Semiconductor circuit and method of fabricating the same |
US7632738B2 (en) * | 2003-06-24 | 2009-12-15 | Sang-Yun Lee | Wafer bonding method |
US20100190334A1 (en) * | 2003-06-24 | 2010-07-29 | Sang-Yun Lee | Three-dimensional semiconductor structure and method of manufacturing the same |
US8071438B2 (en) * | 2003-06-24 | 2011-12-06 | Besang Inc. | Semiconductor circuit |
US8471263B2 (en) * | 2003-06-24 | 2013-06-25 | Sang-Yun Lee | Information storage system which includes a bonded semiconductor structure |
US7867822B2 (en) | 2003-06-24 | 2011-01-11 | Sang-Yun Lee | Semiconductor memory device |
US7057958B2 (en) * | 2003-09-30 | 2006-06-06 | Sandisk Corporation | Method and system for temperature compensation for memory cells with temperature-dependent behavior |
US20050073875A1 (en) * | 2003-10-03 | 2005-04-07 | Matsushita Electric Industrial Co., Ltd. | Redundancy repaired yield calculation method |
US7221008B2 (en) * | 2003-10-06 | 2007-05-22 | Sandisk Corporation | Bitline direction shielding to avoid cross coupling between adjacent cells for NAND flash memory |
US7682920B2 (en) * | 2003-12-03 | 2010-03-23 | Sandisk 3D Llc | Method for making a p-i-n diode crystallized adjacent to a silicide in series with a dielectric antifuse |
US8018024B2 (en) * | 2003-12-03 | 2011-09-13 | Sandisk 3D Llc | P-i-n diode crystallized adjacent to a silicide in series with a dielectric antifuse |
US7423304B2 (en) * | 2003-12-05 | 2008-09-09 | Sandisck 3D Llc | Optimization of critical dimensions and pitch of patterned features in and above a substrate |
US6951780B1 (en) * | 2003-12-18 | 2005-10-04 | Matrix Semiconductor, Inc. | Selective oxidation of silicon in diode, TFT, and monolithic three dimensional memory arrays |
FR2864336B1 (fr) * | 2003-12-23 | 2006-04-28 | Commissariat Energie Atomique | Procede de scellement de deux plaques avec formation d'un contact ohmique entre celles-ci |
JP3896112B2 (ja) * | 2003-12-25 | 2007-03-22 | エルピーダメモリ株式会社 | 半導体集積回路装置 |
JP4850392B2 (ja) * | 2004-02-17 | 2012-01-11 | 三洋電機株式会社 | 半導体装置の製造方法 |
US7183153B2 (en) * | 2004-03-12 | 2007-02-27 | Sandisk Corporation | Method of manufacturing self aligned non-volatile memory cells |
FR2872625B1 (fr) * | 2004-06-30 | 2006-09-22 | Commissariat Energie Atomique | Assemblage par adhesion moleculaire de deux substrats, l'un au moins supportant un film conducteur electrique |
US7507638B2 (en) * | 2004-06-30 | 2009-03-24 | Freescale Semiconductor, Inc. | Ultra-thin die and method of fabricating same |
US7315466B2 (en) | 2004-08-04 | 2008-01-01 | Samsung Electronics Co., Ltd. | Semiconductor memory device and method for arranging and manufacturing the same |
US7312487B2 (en) * | 2004-08-16 | 2007-12-25 | International Business Machines Corporation | Three dimensional integrated circuit |
US20060067117A1 (en) * | 2004-09-29 | 2006-03-30 | Matrix Semiconductor, Inc. | Fuse memory cell comprising a diode, the diode serving as the fuse element |
US7566974B2 (en) * | 2004-09-29 | 2009-07-28 | Sandisk 3D, Llc | Doped polysilicon via connecting polysilicon layers |
US7405465B2 (en) | 2004-09-29 | 2008-07-29 | Sandisk 3D Llc | Deposited semiconductor structure to minimize n-type dopant diffusion and method of making |
JP4966487B2 (ja) * | 2004-09-29 | 2012-07-04 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置及びその製造方法 |
JP4443379B2 (ja) * | 2004-10-26 | 2010-03-31 | 三洋電機株式会社 | 半導体装置の製造方法 |
JP4873517B2 (ja) * | 2004-10-28 | 2012-02-08 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置及びその製造方法 |
US7416956B2 (en) * | 2004-11-23 | 2008-08-26 | Sandisk Corporation | Self-aligned trench filling for narrow gap isolation regions |
US7381615B2 (en) | 2004-11-23 | 2008-06-03 | Sandisk Corporation | Methods for self-aligned trench filling with grown dielectric for high coupling ratio in semiconductor devices |
US7218570B2 (en) * | 2004-12-17 | 2007-05-15 | Sandisk 3D Llc | Apparatus and method for memory operations using address-dependent conditions |
US7482223B2 (en) * | 2004-12-22 | 2009-01-27 | Sandisk Corporation | Multi-thickness dielectric for semiconductor memory |
US7259038B2 (en) * | 2005-01-19 | 2007-08-21 | Sandisk Corporation | Forming nonvolatile phase change memory cell having a reduced thermal contact area |
US7307268B2 (en) | 2005-01-19 | 2007-12-11 | Sandisk Corporation | Structure and method for biasing phase change memory array for reliable writing |
US7517796B2 (en) * | 2005-02-17 | 2009-04-14 | Sandisk 3D Llc | Method for patterning submicron pillars |
US7485967B2 (en) * | 2005-03-10 | 2009-02-03 | Sanyo Electric Co., Ltd. | Semiconductor device with via hole for electric connection |
US7303959B2 (en) * | 2005-03-11 | 2007-12-04 | Sandisk 3D Llc | Bottom-gate SONOS-type cell having a silicide gate |
US7422985B2 (en) * | 2005-03-25 | 2008-09-09 | Sandisk 3D Llc | Method for reducing dielectric overetch using a dielectric etch stop at a planar surface |
US7521353B2 (en) | 2005-03-25 | 2009-04-21 | Sandisk 3D Llc | Method for reducing dielectric overetch when making contact to conductive features |
US8367524B2 (en) * | 2005-03-29 | 2013-02-05 | Sang-Yun Lee | Three-dimensional integrated circuit structure |
US8455978B2 (en) | 2010-05-27 | 2013-06-04 | Sang-Yun Lee | Semiconductor circuit structure and method of making the same |
US20110143506A1 (en) * | 2009-12-10 | 2011-06-16 | Sang-Yun Lee | Method for fabricating a semiconductor memory device |
US7553611B2 (en) * | 2005-03-31 | 2009-06-30 | Sandisk 3D Llc | Masking of repeated overlay and alignment marks to allow reuse of photomasks in a vertical structure |
US7812404B2 (en) | 2005-05-09 | 2010-10-12 | Sandisk 3D Llc | Nonvolatile memory cell comprising a diode and a resistance-switching material |
US8110863B2 (en) | 2005-06-01 | 2012-02-07 | Sandisk 3D Llc | TFT charge storage memory cell having high-mobility corrugated channel |
US7764549B2 (en) * | 2005-06-20 | 2010-07-27 | Sandisk 3D Llc | Floating body memory cell system and method of manufacture |
US7317641B2 (en) * | 2005-06-20 | 2008-01-08 | Sandisk Corporation | Volatile memory cell two-pass writing method |
GB2441726B (en) * | 2005-06-24 | 2010-08-11 | Metaram Inc | An integrated memory core and memory interface circuit |
US8077535B2 (en) | 2006-07-31 | 2011-12-13 | Google Inc. | Memory refresh apparatus and method |
US8081474B1 (en) | 2007-12-18 | 2011-12-20 | Google Inc. | Embossed heat spreader |
US8041881B2 (en) | 2006-07-31 | 2011-10-18 | Google Inc. | Memory device with emulated characteristics |
US8090897B2 (en) | 2006-07-31 | 2012-01-03 | Google Inc. | System and method for simulating an aspect of a memory circuit |
US7609567B2 (en) | 2005-06-24 | 2009-10-27 | Metaram, Inc. | System and method for simulating an aspect of a memory circuit |
US9171585B2 (en) | 2005-06-24 | 2015-10-27 | Google Inc. | Configurable memory circuit system and method |
US8089795B2 (en) | 2006-02-09 | 2012-01-03 | Google Inc. | Memory module with memory stack and interface with enhanced capabilities |
US7386656B2 (en) | 2006-07-31 | 2008-06-10 | Metaram, Inc. | Interface circuit system and method for performing power management operations in conjunction with only a portion of a memory circuit |
US8335894B1 (en) | 2008-07-25 | 2012-12-18 | Google Inc. | Configurable memory system with interface circuit |
US9542352B2 (en) | 2006-02-09 | 2017-01-10 | Google Inc. | System and method for reducing command scheduling constraints of memory circuits |
US20080028136A1 (en) | 2006-07-31 | 2008-01-31 | Schakel Keith R | Method and apparatus for refresh management of memory modules |
US9507739B2 (en) | 2005-06-24 | 2016-11-29 | Google Inc. | Configurable memory circuit system and method |
US8796830B1 (en) | 2006-09-01 | 2014-08-05 | Google Inc. | Stackable low-profile lead frame package |
US8397013B1 (en) | 2006-10-05 | 2013-03-12 | Google Inc. | Hybrid memory module |
US8327104B2 (en) | 2006-07-31 | 2012-12-04 | Google Inc. | Adjusting the timing of signals associated with a memory system |
US8130560B1 (en) | 2006-11-13 | 2012-03-06 | Google Inc. | Multi-rank partial width memory modules |
US8386722B1 (en) | 2008-06-23 | 2013-02-26 | Google Inc. | Stacked DIMM memory interface |
US8060774B2 (en) | 2005-06-24 | 2011-11-15 | Google Inc. | Memory systems and memory modules |
US8055833B2 (en) | 2006-10-05 | 2011-11-08 | Google Inc. | System and method for increasing capacity, performance, and flexibility of flash storage |
US8111566B1 (en) | 2007-11-16 | 2012-02-07 | Google, Inc. | Optimal channel design for memory devices for providing a high-speed memory interface |
US8169233B2 (en) | 2009-06-09 | 2012-05-01 | Google Inc. | Programming of DIMM termination resistance values |
US8359187B2 (en) | 2005-06-24 | 2013-01-22 | Google Inc. | Simulating a different number of memory circuit devices |
US20080082763A1 (en) | 2006-10-02 | 2008-04-03 | Metaram, Inc. | Apparatus and method for power management of memory circuits by a system or component thereof |
US8244971B2 (en) | 2006-07-31 | 2012-08-14 | Google Inc. | Memory circuit system and method |
US8438328B2 (en) | 2008-02-21 | 2013-05-07 | Google Inc. | Emulation of abstracted DIMMs using abstracted DRAMs |
US10013371B2 (en) | 2005-06-24 | 2018-07-03 | Google Llc | Configurable memory circuit system and method |
US20070069241A1 (en) * | 2005-07-01 | 2007-03-29 | Matrix Semiconductor, Inc. | Memory with high dielectric constant antifuses and method for using at low voltage |
US7453755B2 (en) * | 2005-07-01 | 2008-11-18 | Sandisk 3D Llc | Memory cell with high-K antifuse for reverse bias programming |
US7955515B2 (en) * | 2005-07-11 | 2011-06-07 | Sandisk 3D Llc | Method of plasma etching transition metal oxides |
US7426128B2 (en) * | 2005-07-11 | 2008-09-16 | Sandisk 3D Llc | Switchable resistive memory with opposite polarity write pulses |
US7362604B2 (en) * | 2005-07-11 | 2008-04-22 | Sandisk 3D Llc | Apparatus and method for programming an array of nonvolatile memory cells including switchable resistor memory elements |
US7345907B2 (en) | 2005-07-11 | 2008-03-18 | Sandisk 3D Llc | Apparatus and method for reading an array of nonvolatile memory cells including switchable resistor memory elements |
US7978561B2 (en) | 2005-07-28 | 2011-07-12 | Samsung Electronics Co., Ltd. | Semiconductor memory devices having vertically-stacked transistors therein |
JP2009502962A (ja) * | 2005-07-29 | 2009-01-29 | ザ ジェネラル ホスピタル コーポレイション | 皮膚損傷を軽減するための方法、及び組成物 |
US7827345B2 (en) * | 2005-08-04 | 2010-11-02 | Joel Henry Hinrichs | Serially interfaced random access memory |
US7485968B2 (en) | 2005-08-11 | 2009-02-03 | Ziptronix, Inc. | 3D IC method and device |
US7379316B2 (en) | 2005-09-02 | 2008-05-27 | Metaram, Inc. | Methods and apparatus of stacking DRAMs |
JP4783100B2 (ja) * | 2005-09-12 | 2011-09-28 | 独立行政法人理化学研究所 | 境界データのセル内形状データへの変換方法とその変換プログラム |
US7800934B2 (en) * | 2005-09-28 | 2010-09-21 | Sandisk 3D Llc | Programming methods to increase window for reverse write 3D cell |
US7541240B2 (en) * | 2005-10-18 | 2009-06-02 | Sandisk Corporation | Integration process flow for flash devices with low gap fill aspect ratio |
US7834338B2 (en) * | 2005-11-23 | 2010-11-16 | Sandisk 3D Llc | Memory cell comprising nickel-cobalt oxide switching element |
US7816659B2 (en) * | 2005-11-23 | 2010-10-19 | Sandisk 3D Llc | Devices having reversible resistivity-switching metal oxide or nitride layer with added metal |
US7352602B2 (en) | 2005-12-30 | 2008-04-01 | Micron Technology, Inc. | Configurable inputs and outputs for memory stacking system and method |
US9632929B2 (en) | 2006-02-09 | 2017-04-25 | Google Inc. | Translating an address associated with a command communicated between a system and memory circuits |
US7875871B2 (en) | 2006-03-31 | 2011-01-25 | Sandisk 3D Llc | Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride |
US7829875B2 (en) * | 2006-03-31 | 2010-11-09 | Sandisk 3D Llc | Nonvolatile rewritable memory cell comprising a resistivity-switching oxide or nitride and an antifuse |
US7808810B2 (en) * | 2006-03-31 | 2010-10-05 | Sandisk 3D Llc | Multilevel nonvolatile memory cell comprising a resistivity-switching oxide or nitride and an antifuse |
US7283414B1 (en) | 2006-05-24 | 2007-10-16 | Sandisk 3D Llc | Method for improving the precision of a temperature-sensor circuit |
US7575984B2 (en) * | 2006-05-31 | 2009-08-18 | Sandisk 3D Llc | Conductive hard mask to protect patterned features during trench etch |
US7754605B2 (en) * | 2006-06-30 | 2010-07-13 | Sandisk 3D Llc | Ultrashallow semiconductor contact by outdiffusion from a solid source |
US20080012065A1 (en) * | 2006-07-11 | 2008-01-17 | Sandisk Corporation | Bandgap engineered charge storage layer for 3D TFT |
US7542337B2 (en) * | 2006-07-31 | 2009-06-02 | Sandisk 3D Llc | Apparatus for reading a multi-level passive element memory cell array |
US7542338B2 (en) * | 2006-07-31 | 2009-06-02 | Sandisk 3D Llc | Method for reading a multi-level passive element memory cell array |
US7724589B2 (en) | 2006-07-31 | 2010-05-25 | Google Inc. | System and method for delaying a signal communicated from a system to at least one of a plurality of memory circuits |
US7450414B2 (en) * | 2006-07-31 | 2008-11-11 | Sandisk 3D Llc | Method for using a mixed-use memory array |
US8279704B2 (en) * | 2006-07-31 | 2012-10-02 | Sandisk 3D Llc | Decoder circuitry providing forward and reverse modes of memory array operation and method for biasing same |
US20080023790A1 (en) * | 2006-07-31 | 2008-01-31 | Scheuerlein Roy E | Mixed-use memory array |
US7486537B2 (en) * | 2006-07-31 | 2009-02-03 | Sandisk 3D Llc | Method for using a mixed-use memory array with different data states |
US8513789B2 (en) | 2006-10-10 | 2013-08-20 | Tessera, Inc. | Edge connect wafer level stacking with leads extending along edges |
US7901989B2 (en) | 2006-10-10 | 2011-03-08 | Tessera, Inc. | Reconstituted wafer level stacking |
US7829438B2 (en) * | 2006-10-10 | 2010-11-09 | Tessera, Inc. | Edge connect wafer level stacking |
JP4245180B2 (ja) * | 2006-10-30 | 2009-03-25 | エルピーダメモリ株式会社 | 積層メモリ |
US7952901B2 (en) * | 2007-08-09 | 2011-05-31 | Qualcomm Incorporated | Content addressable memory |
CN101536178B (zh) * | 2006-11-17 | 2011-08-03 | 高通股份有限公司 | 内容可寻址存储器 |
US7811916B2 (en) * | 2006-12-13 | 2010-10-12 | Sandisk 3D Llc | Method for isotropic doping of a non-planar surface exposed in a void |
US20080157169A1 (en) * | 2006-12-28 | 2008-07-03 | Yuan Jack H | Shield plates for reduced field coupling in nonvolatile memory |
US7952195B2 (en) * | 2006-12-28 | 2011-05-31 | Tessera, Inc. | Stacked packages with bridging traces |
US20080160680A1 (en) * | 2006-12-28 | 2008-07-03 | Yuan Jack H | Methods of fabricating shield plates for reduced field coupling in nonvolatile memory |
US7890724B2 (en) * | 2006-12-29 | 2011-02-15 | Sandisk Corporation | System for code execution |
US7890723B2 (en) * | 2006-12-29 | 2011-02-15 | Sandisk Corporation | Method for code execution |
US7605458B1 (en) * | 2007-02-01 | 2009-10-20 | Xilinx, Inc. | Method and apparatus for integrating capacitors in stacked integrated circuits |
KR20080080882A (ko) * | 2007-03-02 | 2008-09-05 | 삼성전자주식회사 | Ecc용 레이어를 구비하는 다층 구조 반도체 메모리 장치및 이를 이용하는 에러 검출 및 정정 방법 |
JP2010522988A (ja) | 2007-03-27 | 2010-07-08 | サンディスク スリーディー,エルエルシー | 3次元nandメモリおよびその作製方法 |
US7514321B2 (en) * | 2007-03-27 | 2009-04-07 | Sandisk 3D Llc | Method of making three dimensional NAND memory |
US7851851B2 (en) * | 2007-03-27 | 2010-12-14 | Sandisk 3D Llc | Three dimensional NAND memory |
US7667999B2 (en) | 2007-03-27 | 2010-02-23 | Sandisk 3D Llc | Method to program a memory cell comprising a carbon nanotube fabric and a steering element |
US7982209B2 (en) | 2007-03-27 | 2011-07-19 | Sandisk 3D Llc | Memory cell comprising a carbon nanotube fabric element and a steering element |
US7575973B2 (en) * | 2007-03-27 | 2009-08-18 | Sandisk 3D Llc | Method of making three dimensional NAND memory |
US7586773B2 (en) | 2007-03-27 | 2009-09-08 | Sandisk 3D Llc | Large array of upward pointing p-i-n diodes having large and uniform current |
US7745265B2 (en) * | 2007-03-27 | 2010-06-29 | Sandisk 3D, Llc | Method of making three dimensional NAND memory |
US7808038B2 (en) * | 2007-03-27 | 2010-10-05 | Sandisk 3D Llc | Method of making three dimensional NAND memory |
US7745285B2 (en) * | 2007-03-30 | 2010-06-29 | Sandisk Corporation | Methods of forming and operating NAND memory with side-tunneling |
US20080315206A1 (en) * | 2007-06-19 | 2008-12-25 | Herner S Brad | Highly Scalable Thin Film Transistor |
US7537968B2 (en) | 2007-06-19 | 2009-05-26 | Sandisk 3D Llc | Junction diode with reduced reverse current |
US8102694B2 (en) * | 2007-06-25 | 2012-01-24 | Sandisk 3D Llc | Nonvolatile memory device containing carbon or nitrogen doped diode |
US8072791B2 (en) * | 2007-06-25 | 2011-12-06 | Sandisk 3D Llc | Method of making nonvolatile memory device containing carbon or nitrogen doped diode |
US7684226B2 (en) * | 2007-06-25 | 2010-03-23 | Sandisk 3D Llc | Method of making high forward current diodes for reverse write 3D cell |
US7830697B2 (en) * | 2007-06-25 | 2010-11-09 | Sandisk 3D Llc | High forward current diodes for reverse write 3D cell |
US7718546B2 (en) * | 2007-06-27 | 2010-05-18 | Sandisk 3D Llc | Method for fabricating a 3-D integrated circuit using a hard mask of silicon-oxynitride on amorphous carbon |
US20090003083A1 (en) * | 2007-06-28 | 2009-01-01 | Sandisk 3D Llc | Memory cell with voltage modulated sidewall poly resistor |
US7824956B2 (en) * | 2007-06-29 | 2010-11-02 | Sandisk 3D Llc | Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same |
US7902537B2 (en) * | 2007-06-29 | 2011-03-08 | Sandisk 3D Llc | Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same |
US8233308B2 (en) | 2007-06-29 | 2012-07-31 | Sandisk 3D Llc | Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same |
US7800939B2 (en) * | 2007-06-29 | 2010-09-21 | Sandisk 3D Llc | Method of making 3D R/W cell with reduced reverse leakage |
US20090104756A1 (en) * | 2007-06-29 | 2009-04-23 | Tanmay Kumar | Method to form a rewriteable memory cell comprising a diode and a resistivity-switching grown oxide |
US7759666B2 (en) * | 2007-06-29 | 2010-07-20 | Sandisk 3D Llc | 3D R/W cell with reduced reverse leakage |
US7846785B2 (en) * | 2007-06-29 | 2010-12-07 | Sandisk 3D Llc | Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same |
WO2009005700A2 (en) | 2007-06-29 | 2009-01-08 | Sandisk 3D, Llc | Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same |
US8209479B2 (en) | 2007-07-18 | 2012-06-26 | Google Inc. | Memory circuit system and method |
US8461672B2 (en) * | 2007-07-27 | 2013-06-11 | Tessera, Inc. | Reconstituted wafer stack packaging with after-applied pad extensions |
WO2009020572A2 (en) | 2007-08-03 | 2009-02-12 | Tessera Technologies Hungary Kft. | Stack packages using reconstituted wafers |
US8043895B2 (en) | 2007-08-09 | 2011-10-25 | Tessera, Inc. | Method of fabricating stacked assembly including plurality of stacked microelectronic elements |
EP2037461A3 (en) | 2007-09-12 | 2009-10-28 | Samsung Electronics Co., Ltd. | Multi-layered memory devices |
US20090070550A1 (en) * | 2007-09-12 | 2009-03-12 | Solomon Research Llc | Operational dynamics of three dimensional intelligent system on a chip |
US8042082B2 (en) * | 2007-09-12 | 2011-10-18 | Neal Solomon | Three dimensional memory in a system on a chip |
US8136071B2 (en) * | 2007-09-12 | 2012-03-13 | Neal Solomon | Three dimensional integrated circuits and methods of fabrication |
US8080874B1 (en) | 2007-09-14 | 2011-12-20 | Google Inc. | Providing additional space between an integrated circuit and a circuit board for positioning a component therebetween |
US8298931B2 (en) * | 2007-09-28 | 2012-10-30 | Sandisk 3D Llc | Dual damascene with amorphous carbon for 3D deep via/trench application |
US20090087993A1 (en) * | 2007-09-28 | 2009-04-02 | Steven Maxwell | Methods and apparatus for cost-effectively increasing feature density using a mask shrinking process with double patterning |
US7846782B2 (en) | 2007-09-28 | 2010-12-07 | Sandisk 3D Llc | Diode array and method of making thereof |
US8349663B2 (en) * | 2007-09-28 | 2013-01-08 | Sandisk 3D Llc | Vertical diode based memory cells having a lowered programming voltage and methods of forming the same |
US20090086521A1 (en) * | 2007-09-28 | 2009-04-02 | Herner S Brad | Multiple antifuse memory cells and methods to form, program, and sense the same |
US8059443B2 (en) * | 2007-10-23 | 2011-11-15 | Hewlett-Packard Development Company, L.P. | Three-dimensional memory module architectures |
US8679861B2 (en) * | 2007-11-29 | 2014-03-25 | International Business Machines Corporation | Semiconductor chip repair by stacking of a base semiconductor chip and a repair semiconductor chip |
US20090144678A1 (en) * | 2007-11-30 | 2009-06-04 | International Business Machines Corporation | Method and on-chip control apparatus for enhancing process reliability and process variability through 3d integration |
US7759201B2 (en) * | 2007-12-17 | 2010-07-20 | Sandisk 3D Llc | Method for fabricating pitch-doubling pillar structures |
US7746680B2 (en) | 2007-12-27 | 2010-06-29 | Sandisk 3D, Llc | Three dimensional hexagonal matrix memory array |
US7706169B2 (en) * | 2007-12-27 | 2010-04-27 | Sandisk 3D Llc | Large capacity one-time programmable memory cell using metal oxides |
US7887999B2 (en) * | 2007-12-27 | 2011-02-15 | Sandisk 3D Llc | Method of making a pillar pattern using triple or quadruple exposure |
US7764534B2 (en) * | 2007-12-28 | 2010-07-27 | Sandisk 3D Llc | Two terminal nonvolatile memory using gate controlled diode elements |
US20090166610A1 (en) * | 2007-12-31 | 2009-07-02 | April Schricker | Memory cell with planarized carbon nanotube layer and methods of forming the same |
US8878235B2 (en) | 2007-12-31 | 2014-11-04 | Sandisk 3D Llc | Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same |
US8236623B2 (en) * | 2007-12-31 | 2012-08-07 | Sandisk 3D Llc | Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same |
US8558220B2 (en) * | 2007-12-31 | 2013-10-15 | Sandisk 3D Llc | Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same |
US7906392B2 (en) | 2008-01-15 | 2011-03-15 | Sandisk 3D Llc | Pillar devices and methods of making thereof |
US7745312B2 (en) * | 2008-01-15 | 2010-06-29 | Sandisk 3D, Llc | Selective germanium deposition for pillar devices |
JP2009200308A (ja) * | 2008-02-22 | 2009-09-03 | Oki Semiconductor Co Ltd | 半導体パッケージ |
GB2458907A (en) * | 2008-04-01 | 2009-10-07 | Sharp Kk | Device interconnects |
GB2459251A (en) * | 2008-04-01 | 2009-10-21 | Sharp Kk | Semiconductor nanowire devices |
US8110476B2 (en) | 2008-04-11 | 2012-02-07 | Sandisk 3D Llc | Memory cell that includes a carbon-based memory element and methods of forming the same |
US8467224B2 (en) * | 2008-04-11 | 2013-06-18 | Sandisk 3D Llc | Damascene integration methods for graphitic films in three-dimensional memories and memories formed therefrom |
US7713818B2 (en) * | 2008-04-11 | 2010-05-11 | Sandisk 3D, Llc | Double patterning method |
US7723180B2 (en) * | 2008-04-11 | 2010-05-25 | Sandisk 3D Llc | Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same |
US8445385B2 (en) * | 2008-04-11 | 2013-05-21 | Sandisk 3D Llc | Methods for etching carbon nano-tube films for use in non-volatile memories |
US7812335B2 (en) * | 2008-04-11 | 2010-10-12 | Sandisk 3D Llc | Sidewall structured switchable resistor cell |
US8084366B2 (en) * | 2008-04-11 | 2011-12-27 | Sandisk 3D Llc | Modified DARC stack for resist patterning |
US7981592B2 (en) * | 2008-04-11 | 2011-07-19 | Sandisk 3D Llc | Double patterning method |
US8048474B2 (en) * | 2008-04-11 | 2011-11-01 | Sandisk 3D Llc | Method of making nonvolatile memory cell containing carbon resistivity switching as a storage element by low temperature processing |
US7859887B2 (en) * | 2008-04-11 | 2010-12-28 | Sandisk 3D Llc | Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same |
US7830698B2 (en) * | 2008-04-11 | 2010-11-09 | Sandisk 3D Llc | Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same |
EP2263273B1 (en) | 2008-04-11 | 2012-05-16 | Sandisk 3D LLC | Memory cell that includes a carbon nano-tube reversible resistance-switching element and methods of forming the same |
US8304284B2 (en) * | 2008-04-11 | 2012-11-06 | Sandisk 3D Llc | Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element, and methods of forming the same |
US8530318B2 (en) * | 2008-04-11 | 2013-09-10 | Sandisk 3D Llc | Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same |
US7786015B2 (en) * | 2008-04-28 | 2010-08-31 | Sandisk 3D Llc | Method for fabricating self-aligned complementary pillar structures and wiring |
US8450835B2 (en) * | 2008-04-29 | 2013-05-28 | Sandisk 3D Llc | Reverse leakage reduction and vertical height shrinking of diode with halo doping |
US7973555B1 (en) * | 2008-05-28 | 2011-07-05 | Xilinx, Inc. | Configuration interface to stacked FPGA |
US20090307415A1 (en) * | 2008-06-05 | 2009-12-10 | Yong-Hoon Kang | Memory device having multi-layer structure and driving method thereof |
US8680662B2 (en) * | 2008-06-16 | 2014-03-25 | Tessera, Inc. | Wafer level edge stacking |
US7732235B2 (en) | 2008-06-30 | 2010-06-08 | Sandisk 3D Llc | Method for fabricating high density pillar structures by double patterning using positive photoresist |
US7781269B2 (en) * | 2008-06-30 | 2010-08-24 | Sandisk 3D Llc | Triangle two dimensional complementary patterning of pillars |
US7932180B2 (en) * | 2008-07-07 | 2011-04-26 | Infineon Technologies Ag | Manufacturing a semiconductor device via etching a semiconductor chip to a first layer |
US8569730B2 (en) * | 2008-07-08 | 2013-10-29 | Sandisk 3D Llc | Carbon-based interface layer for a memory device and methods of forming the same |
CN102144309A (zh) * | 2008-07-08 | 2011-08-03 | 桑迪士克3D有限责任公司 | 基于碳的电阻率-切换材料及其形成方法 |
US8014185B2 (en) * | 2008-07-09 | 2011-09-06 | Sandisk 3D Llc | Multiple series passive element matrix cell for three-dimensional arrays |
US7733685B2 (en) * | 2008-07-09 | 2010-06-08 | Sandisk 3D Llc | Cross point memory cell with distributed diodes and method of making same |
US7579232B1 (en) | 2008-07-11 | 2009-08-25 | Sandisk 3D Llc | Method of making a nonvolatile memory device including forming a pillar shaped semiconductor device and a shadow mask |
US8309407B2 (en) * | 2008-07-15 | 2012-11-13 | Sandisk 3D Llc | Electronic devices including carbon-based films having sidewall liners, and methods of forming such devices |
US20100012914A1 (en) * | 2008-07-18 | 2010-01-21 | Sandisk 3D Llc | Carbon-based resistivity-switching materials and methods of forming the same |
US8031505B2 (en) * | 2008-07-25 | 2011-10-04 | Samsung Electronics Co., Ltd. | Stacked memory module and system |
US20100032639A1 (en) * | 2008-08-07 | 2010-02-11 | Sandisk 3D Llc | Memory cell that includes a carbon-based memory element and methods of forming the same |
US8399336B2 (en) | 2008-08-19 | 2013-03-19 | International Business Machines Corporation | Method for fabricating a 3D integrated circuit device having lower-cost active circuitry layers stacked before higher-cost active circuitry layer |
US8298914B2 (en) * | 2008-08-19 | 2012-10-30 | International Business Machines Corporation | 3D integrated circuit device fabrication using interface wafer as permanent carrier |
US8129256B2 (en) | 2008-08-19 | 2012-03-06 | International Business Machines Corporation | 3D integrated circuit device fabrication with precisely controllable substrate removal |
US8431417B2 (en) * | 2008-08-19 | 2013-04-30 | Sandisk 3D Llc | Methods for increasing carbon nano-tube (CNT) yield in memory devices |
US8130528B2 (en) | 2008-08-25 | 2012-03-06 | Sandisk 3D Llc | Memory system with sectional data lines |
US8130527B2 (en) | 2008-09-11 | 2012-03-06 | Micron Technology, Inc. | Stacked device identification assignment |
US8008213B2 (en) * | 2008-09-30 | 2011-08-30 | Sandisk 3D Llc | Self-assembly process for memory array |
US7920407B2 (en) | 2008-10-06 | 2011-04-05 | Sandisk 3D, Llc | Set and reset detection circuits for reversible resistance switching memory material |
US8027209B2 (en) | 2008-10-06 | 2011-09-27 | Sandisk 3D, Llc | Continuous programming of non-volatile memory |
US8076056B2 (en) * | 2008-10-06 | 2011-12-13 | Sandisk 3D Llc | Method of making sub-resolution pillar structures using undercutting technique |
US7835207B2 (en) * | 2008-10-07 | 2010-11-16 | Micron Technology, Inc. | Stacked device remapping and repair |
JP2012507150A (ja) * | 2008-10-23 | 2012-03-22 | サンディスク スリーディー,エルエルシー | 低減された層間剥離特性を示す炭素系メモリ素子およびその形成方法 |
US7996736B2 (en) * | 2008-10-26 | 2011-08-09 | Sandisk 3D Llc | Bad page marking strategy for fast readout in memory |
US8080443B2 (en) * | 2008-10-27 | 2011-12-20 | Sandisk 3D Llc | Method of making pillars using photoresist spacer mask |
US20100108976A1 (en) * | 2008-10-30 | 2010-05-06 | Sandisk 3D Llc | Electronic devices including carbon-based films, and methods of forming such devices |
US7858468B2 (en) | 2008-10-30 | 2010-12-28 | Micron Technology, Inc. | Memory devices and formation methods |
US8835892B2 (en) * | 2008-10-30 | 2014-09-16 | Sandisk 3D Llc | Electronic devices including carbon nano-tube films having boron nitride-based liners, and methods of forming the same |
US8421050B2 (en) * | 2008-10-30 | 2013-04-16 | Sandisk 3D Llc | Electronic devices including carbon nano-tube films having carbon-based liners, and methods of forming the same |
US8193074B2 (en) * | 2008-11-21 | 2012-06-05 | Sandisk 3D Llc | Integration of damascene type diodes and conductive wires for memory device |
US8734759B2 (en) | 2008-12-05 | 2014-05-27 | Yeda Research And Development Co. Ltd. | Methods of diagnosing and treating motor neuron diseases |
US7978496B2 (en) | 2008-12-18 | 2011-07-12 | Sandisk 3D Llc | Method of programming a nonvolatile memory device containing a carbon storage material |
US7929368B2 (en) * | 2008-12-30 | 2011-04-19 | Micron Technology, Inc. | Variable memory refresh devices and methods |
US7846756B2 (en) * | 2008-12-31 | 2010-12-07 | Sandisk 3D Llc | Nanoimprint enhanced resist spacer patterning method |
US8084347B2 (en) * | 2008-12-31 | 2011-12-27 | Sandisk 3D Llc | Resist feature and removable spacer pitch doubling patterning method for pillar structures |
US8470646B2 (en) * | 2008-12-31 | 2013-06-25 | Sandisk 3D Llc | Modulation of resistivity in carbon-based read-writeable materials |
US8114765B2 (en) | 2008-12-31 | 2012-02-14 | Sandisk 3D Llc | Methods for increased array feature density |
US8023310B2 (en) * | 2009-01-14 | 2011-09-20 | Sandisk 3D Llc | Nonvolatile memory cell including carbon storage element formed on a silicide layer |
US8456880B2 (en) * | 2009-01-30 | 2013-06-04 | Unity Semiconductor Corporation | Multiple layers of memory implemented as different memory technology |
US8158515B2 (en) | 2009-02-03 | 2012-04-17 | International Business Machines Corporation | Method of making 3D integrated circuits |
US8683164B2 (en) * | 2009-02-04 | 2014-03-25 | Micron Technology, Inc. | Stacked-die memory systems and methods for training stacked-die memory systems |
US8466542B2 (en) * | 2009-03-13 | 2013-06-18 | Tessera, Inc. | Stacked microelectronic assemblies having vias extending through bond pads |
US8183121B2 (en) | 2009-03-31 | 2012-05-22 | Sandisk 3D Llc | Carbon-based films, and methods of forming the same, having dielectric filler material and exhibiting reduced thermal resistance |
US8270199B2 (en) | 2009-04-03 | 2012-09-18 | Sandisk 3D Llc | Cross point non-volatile memory cell |
US7978498B2 (en) | 2009-04-03 | 2011-07-12 | Sandisk 3D, Llc | Programming non-volatile storage element using current from other element |
US8362800B2 (en) | 2010-10-13 | 2013-01-29 | Monolithic 3D Inc. | 3D semiconductor device including field repairable logics |
US8754533B2 (en) | 2009-04-14 | 2014-06-17 | Monolithic 3D Inc. | Monolithic three-dimensional semiconductor device and structure |
US8405420B2 (en) | 2009-04-14 | 2013-03-26 | Monolithic 3D Inc. | System comprising a semiconductor device and structure |
US9711407B2 (en) | 2009-04-14 | 2017-07-18 | Monolithic 3D Inc. | Method of manufacturing a three dimensional integrated circuit by transfer of a mono-crystalline layer |
US8427200B2 (en) | 2009-04-14 | 2013-04-23 | Monolithic 3D Inc. | 3D semiconductor device |
US7986042B2 (en) | 2009-04-14 | 2011-07-26 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
US8058137B1 (en) | 2009-04-14 | 2011-11-15 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
US8395191B2 (en) | 2009-10-12 | 2013-03-12 | Monolithic 3D Inc. | Semiconductor device and structure |
US9509313B2 (en) | 2009-04-14 | 2016-11-29 | Monolithic 3D Inc. | 3D semiconductor device |
US9577642B2 (en) | 2009-04-14 | 2017-02-21 | Monolithic 3D Inc. | Method to form a 3D semiconductor device |
US8384426B2 (en) | 2009-04-14 | 2013-02-26 | Monolithic 3D Inc. | Semiconductor device and structure |
US8362482B2 (en) | 2009-04-14 | 2013-01-29 | Monolithic 3D Inc. | Semiconductor device and structure |
US8669778B1 (en) | 2009-04-14 | 2014-03-11 | Monolithic 3D Inc. | Method for design and manufacturing of a 3D semiconductor device |
US8373439B2 (en) | 2009-04-14 | 2013-02-12 | Monolithic 3D Inc. | 3D semiconductor device |
US8378715B2 (en) | 2009-04-14 | 2013-02-19 | Monolithic 3D Inc. | Method to construct systems |
US8279650B2 (en) | 2009-04-20 | 2012-10-02 | Sandisk 3D Llc | Memory system with data line switching scheme |
US20100283053A1 (en) * | 2009-05-11 | 2010-11-11 | Sandisk 3D Llc | Nonvolatile memory array comprising silicon-based diodes fabricated at low temperature |
US8988130B2 (en) | 2009-05-20 | 2015-03-24 | Qualcomm Incorporated | Method and apparatus for providing through silicon via (TSV) redundancy |
US8154904B2 (en) | 2009-06-19 | 2012-04-10 | Sandisk 3D Llc | Programming reversible resistance switching elements |
US7927977B2 (en) | 2009-07-15 | 2011-04-19 | Sandisk 3D Llc | Method of making damascene diodes using sacrificial material |
US8148230B2 (en) | 2009-07-15 | 2012-04-03 | Sandisk 3D Llc | Method of making damascene diodes using selective etching methods |
US8320181B2 (en) * | 2009-08-25 | 2012-11-27 | Micron Technology, Inc. | 3D memory devices decoding and routing systems and methods |
US8207064B2 (en) | 2009-09-17 | 2012-06-26 | Sandisk 3D Llc | 3D polysilicon diode with low contact resistance and method for forming same |
US8536023B2 (en) | 2010-11-22 | 2013-09-17 | Monolithic 3D Inc. | Method of manufacturing a semiconductor device and structure |
US11018133B2 (en) | 2009-10-12 | 2021-05-25 | Monolithic 3D Inc. | 3D integrated circuit |
US8294159B2 (en) | 2009-10-12 | 2012-10-23 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
US8742476B1 (en) | 2012-11-27 | 2014-06-03 | Monolithic 3D Inc. | Semiconductor device and structure |
US10388863B2 (en) | 2009-10-12 | 2019-08-20 | Monolithic 3D Inc. | 3D memory device and structure |
US10366970B2 (en) | 2009-10-12 | 2019-07-30 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US9099424B1 (en) | 2012-08-10 | 2015-08-04 | Monolithic 3D Inc. | Semiconductor system, device and structure with heat removal |
US8581349B1 (en) | 2011-05-02 | 2013-11-12 | Monolithic 3D Inc. | 3D memory semiconductor device and structure |
US8476145B2 (en) | 2010-10-13 | 2013-07-02 | Monolithic 3D Inc. | Method of fabricating a semiconductor device and structure |
US11374118B2 (en) | 2009-10-12 | 2022-06-28 | Monolithic 3D Inc. | Method to form a 3D integrated circuit |
US10910364B2 (en) | 2009-10-12 | 2021-02-02 | Monolitaic 3D Inc. | 3D semiconductor device |
US10043781B2 (en) | 2009-10-12 | 2018-08-07 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10354995B2 (en) | 2009-10-12 | 2019-07-16 | Monolithic 3D Inc. | Semiconductor memory device and structure |
US10157909B2 (en) | 2009-10-12 | 2018-12-18 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US8450804B2 (en) | 2011-03-06 | 2013-05-28 | Monolithic 3D Inc. | Semiconductor device and structure for heat removal |
WO2011047151A2 (en) | 2009-10-14 | 2011-04-21 | Skeletal Dynamics Llc | Internal joint stabilizer for a multi-axis joint, such as a carpo-metacarpal joint or the like, and method of use |
US8274130B2 (en) | 2009-10-20 | 2012-09-25 | Sandisk 3D Llc | Punch-through diode steering element |
US8551855B2 (en) | 2009-10-23 | 2013-10-08 | Sandisk 3D Llc | Memory cell that includes a carbon-based reversible resistance switching element compatible with a steering element, and methods of forming the same |
US8481396B2 (en) | 2009-10-23 | 2013-07-09 | Sandisk 3D Llc | Memory cell that includes a carbon-based reversible resistance switching element compatible with a steering element, and methods of forming the same |
KR20120089697A (ko) * | 2009-10-26 | 2012-08-13 | 쌘디스크 3디 엘엘씨 | 4× 1/2 피치 릴리프 패터닝을 위해 이중 측벽 패터닝을 사용하여 메모리 라인들 및 구조들을 형성하는 장치 및 방법 |
US8233309B2 (en) | 2009-10-26 | 2012-07-31 | Sandisk 3D Llc | Non-volatile memory array architecture incorporating 1T-1R near 4F2 memory cell |
US8558345B2 (en) | 2009-11-09 | 2013-10-15 | International Business Machines Corporation | Integrated decoupling capacitor employing conductive through-substrate vias |
US8237278B2 (en) | 2009-11-16 | 2012-08-07 | International Business Machines Corporation | Configurable interposer |
US8551850B2 (en) * | 2009-12-07 | 2013-10-08 | Sandisk 3D Llc | Methods of forming a reversible resistance-switching metal-insulator-metal structure |
US8213243B2 (en) | 2009-12-15 | 2012-07-03 | Sandisk 3D Llc | Program cycle skip |
US8223525B2 (en) | 2009-12-15 | 2012-07-17 | Sandisk 3D Llc | Page register outside array and sense amplifier interface |
US8026178B2 (en) | 2010-01-12 | 2011-09-27 | Sandisk 3D Llc | Patterning method for high density pillar structures |
US7923305B1 (en) | 2010-01-12 | 2011-04-12 | Sandisk 3D Llc | Patterning method for high density pillar structures |
US8415238B2 (en) * | 2010-01-14 | 2013-04-09 | International Business Machines Corporation | Three dimensional integration and methods of through silicon via creation |
US8399180B2 (en) * | 2010-01-14 | 2013-03-19 | International Business Machines Corporation | Three dimensional integration with through silicon vias having multiple diameters |
US8232636B2 (en) * | 2010-01-26 | 2012-07-31 | International Business Machines Corporation | Reliability enhancement of metal thermal interface |
US8431492B2 (en) * | 2010-02-02 | 2013-04-30 | Sandisk 3D Llc | Memory cell that includes a sidewall collar for pillar isolation and methods of forming the same |
US8304863B2 (en) * | 2010-02-09 | 2012-11-06 | International Business Machines Corporation | Electromigration immune through-substrate vias |
US8389375B2 (en) | 2010-02-11 | 2013-03-05 | Sandisk 3D Llc | Memory cell formed using a recess and methods for forming the same |
US8541819B1 (en) | 2010-12-09 | 2013-09-24 | Monolithic 3D Inc. | Semiconductor device and structure |
US8461035B1 (en) | 2010-09-30 | 2013-06-11 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
US8026521B1 (en) | 2010-10-11 | 2011-09-27 | Monolithic 3D Inc. | Semiconductor device and structure |
US9099526B2 (en) | 2010-02-16 | 2015-08-04 | Monolithic 3D Inc. | Integrated circuit device and structure |
US8373230B1 (en) | 2010-10-13 | 2013-02-12 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
US8492886B2 (en) | 2010-02-16 | 2013-07-23 | Monolithic 3D Inc | 3D integrated circuit with logic |
KR20130001725A (ko) | 2010-02-18 | 2013-01-04 | 쌘디스크 3디 엘엘씨 | 반전가능한 저항-스위칭 소자들에 대한 스텝 소프트 프로그래밍 |
US8686419B2 (en) * | 2010-02-23 | 2014-04-01 | Sandisk 3D Llc | Structure and fabrication method for resistance-change memory cell in 3-D memory |
US8237146B2 (en) | 2010-02-24 | 2012-08-07 | Sandisk 3D Llc | Memory cell with silicon-containing carbon switching layer and methods for forming the same |
US20110210306A1 (en) | 2010-02-26 | 2011-09-01 | Yubao Li | Memory cell that includes a carbon-based memory element and methods of forming the same |
US8481394B2 (en) * | 2010-03-04 | 2013-07-09 | Sandisk 3D Llc | Memory cell that includes a carbon-based memory element and methods of forming the same |
US8354660B2 (en) | 2010-03-16 | 2013-01-15 | Sandisk 3D Llc | Bottom electrodes for use with metal oxide resistivity switching layers |
US8114707B2 (en) | 2010-03-25 | 2012-02-14 | International Business Machines Corporation | Method of forming a multi-chip stacked structure including a thin interposer chip having a face-to-back bonding with another chip |
US20110244683A1 (en) | 2010-04-01 | 2011-10-06 | Michiaki Sano | Fabricating Voids Using Slurry Protect Coat Before Chemical-Mechanical Polishing |
TW201207852A (en) * | 2010-04-05 | 2012-02-16 | Mosaid Technologies Inc | Semiconductor memory device having a three-dimensional structure |
US8471360B2 (en) | 2010-04-14 | 2013-06-25 | Sandisk 3D Llc | Memory cell with carbon switching material having a reduced cross-sectional area and methods for forming the same |
US8436447B2 (en) | 2010-04-23 | 2013-05-07 | Sandisk 3D Llc | Memory cell that includes a carbon-based memory element and methods of forming the same |
US8385102B2 (en) | 2010-05-11 | 2013-02-26 | Sandisk 3D Llc | Alternating bipolar forming voltage for resistivity-switching elements |
US20110278529A1 (en) | 2010-05-14 | 2011-11-17 | Huiwen Xu | Memory employing diamond-like carbon resistivity-switchable material and methods of forming the same |
US8395942B2 (en) | 2010-05-17 | 2013-03-12 | Sandisk Technologies Inc. | Junctionless TFT NAND flash memory |
US8723335B2 (en) | 2010-05-20 | 2014-05-13 | Sang-Yun Lee | Semiconductor circuit structure and method of forming the same using a capping layer |
US8232648B2 (en) | 2010-06-01 | 2012-07-31 | International Business Machines Corporation | Semiconductor article having a through silicon via and guard ring |
KR20110132820A (ko) * | 2010-06-03 | 2011-12-09 | 삼성전자주식회사 | 다수개의 반도체 레이어가 적층 된 반도체 메모리 장치 및 시스템 |
US8520425B2 (en) | 2010-06-18 | 2013-08-27 | Sandisk 3D Llc | Resistive random access memory with low current operation |
US8724369B2 (en) | 2010-06-18 | 2014-05-13 | Sandisk 3D Llc | Composition of memory cell with resistance-switching layers |
US8520424B2 (en) | 2010-06-18 | 2013-08-27 | Sandisk 3D Llc | Composition of memory cell with resistance-switching layers |
US8564305B2 (en) * | 2010-06-22 | 2013-10-22 | National Tsing Hua University | Discontinuous type layer-ID detector for 3D-IC and method of the same |
US9397093B2 (en) | 2013-02-08 | 2016-07-19 | Sandisk Technologies Inc. | Three dimensional NAND device with semiconductor, metal or silicide floating gates and method of making thereof |
US8928061B2 (en) | 2010-06-30 | 2015-01-06 | SanDisk Technologies, Inc. | Three dimensional NAND device with silicide containing floating gates |
US9159739B2 (en) | 2010-06-30 | 2015-10-13 | Sandisk Technologies Inc. | Floating gate ultrahigh density vertical NAND flash memory |
US10128261B2 (en) | 2010-06-30 | 2018-11-13 | Sandisk Technologies Llc | Cobalt-containing conductive layers for control gate electrodes in a memory structure |
KR101079300B1 (ko) | 2010-07-08 | 2011-11-04 | 윤재만 | 반도체 메모리 장치 |
US8492878B2 (en) | 2010-07-21 | 2013-07-23 | International Business Machines Corporation | Metal-contamination-free through-substrate via structure |
US8901613B2 (en) | 2011-03-06 | 2014-12-02 | Monolithic 3D Inc. | Semiconductor device and structure for heat removal |
US9953925B2 (en) | 2011-06-28 | 2018-04-24 | Monolithic 3D Inc. | Semiconductor system and device |
US10217667B2 (en) | 2011-06-28 | 2019-02-26 | Monolithic 3D Inc. | 3D semiconductor device, fabrication method and system |
US9219005B2 (en) | 2011-06-28 | 2015-12-22 | Monolithic 3D Inc. | Semiconductor system and device |
US8642416B2 (en) | 2010-07-30 | 2014-02-04 | Monolithic 3D Inc. | Method of forming three dimensional integrated circuit devices using layer transfer technique |
KR20120019882A (ko) * | 2010-08-27 | 2012-03-07 | 주식회사 하이닉스반도체 | 반도체 집적회로 |
US8883589B2 (en) | 2010-09-28 | 2014-11-11 | Sandisk 3D Llc | Counter doping compensation methods to improve diode performance |
US20120080802A1 (en) | 2010-09-30 | 2012-04-05 | International Business Machines Corporation | Through silicon via in n+ epitaxy wafers with reduced parasitic capacitance |
US8163581B1 (en) | 2010-10-13 | 2012-04-24 | Monolith IC 3D | Semiconductor and optoelectronic devices |
US11482440B2 (en) | 2010-12-16 | 2022-10-25 | Monolithic 3D Inc. | 3D semiconductor device and structure with a built-in test circuit for repairing faulty circuits |
US10497713B2 (en) | 2010-11-18 | 2019-12-03 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
US8273610B2 (en) | 2010-11-18 | 2012-09-25 | Monolithic 3D Inc. | Method of constructing a semiconductor device and structure |
US11158674B2 (en) | 2010-10-11 | 2021-10-26 | Monolithic 3D Inc. | Method to produce a 3D semiconductor device and structure |
US10896931B1 (en) | 2010-10-11 | 2021-01-19 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11018191B1 (en) | 2010-10-11 | 2021-05-25 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10290682B2 (en) | 2010-10-11 | 2019-05-14 | Monolithic 3D Inc. | 3D IC semiconductor device and structure with stacked memory |
US11257867B1 (en) | 2010-10-11 | 2022-02-22 | Monolithic 3D Inc. | 3D semiconductor device and structure with oxide bonds |
US11469271B2 (en) | 2010-10-11 | 2022-10-11 | Monolithic 3D Inc. | Method to produce 3D semiconductor devices and structures with memory |
US11315980B1 (en) | 2010-10-11 | 2022-04-26 | Monolithic 3D Inc. | 3D semiconductor device and structure with transistors |
US8114757B1 (en) | 2010-10-11 | 2012-02-14 | Monolithic 3D Inc. | Semiconductor device and structure |
US11227897B2 (en) | 2010-10-11 | 2022-01-18 | Monolithic 3D Inc. | Method for producing a 3D semiconductor memory device and structure |
US11600667B1 (en) | 2010-10-11 | 2023-03-07 | Monolithic 3D Inc. | Method to produce 3D semiconductor devices and structures with memory |
US11024673B1 (en) | 2010-10-11 | 2021-06-01 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11164898B2 (en) | 2010-10-13 | 2021-11-02 | Monolithic 3D Inc. | Multilevel semiconductor device and structure |
US10833108B2 (en) | 2010-10-13 | 2020-11-10 | Monolithic 3D Inc. | 3D microdisplay device and structure |
US11929372B2 (en) | 2010-10-13 | 2024-03-12 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors and wafer bonding |
US11694922B2 (en) | 2010-10-13 | 2023-07-04 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with oxide bonding |
US11605663B2 (en) | 2010-10-13 | 2023-03-14 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors and wafer bonding |
US9197804B1 (en) | 2011-10-14 | 2015-11-24 | Monolithic 3D Inc. | Semiconductor and optoelectronic devices |
US11163112B2 (en) | 2010-10-13 | 2021-11-02 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with electromagnetic modulators |
US11063071B1 (en) | 2010-10-13 | 2021-07-13 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with waveguides |
US11855100B2 (en) | 2010-10-13 | 2023-12-26 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with oxide bonding |
US11404466B2 (en) | 2010-10-13 | 2022-08-02 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors |
US10998374B1 (en) | 2010-10-13 | 2021-05-04 | Monolithic 3D Inc. | Multilevel semiconductor device and structure |
US11327227B2 (en) | 2010-10-13 | 2022-05-10 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with electromagnetic modulators |
US8379458B1 (en) | 2010-10-13 | 2013-02-19 | Monolithic 3D Inc. | Semiconductor device and structure |
US10679977B2 (en) | 2010-10-13 | 2020-06-09 | Monolithic 3D Inc. | 3D microdisplay device and structure |
US11869915B2 (en) | 2010-10-13 | 2024-01-09 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors and wafer bonding |
US10978501B1 (en) | 2010-10-13 | 2021-04-13 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with waveguides |
US11437368B2 (en) | 2010-10-13 | 2022-09-06 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with oxide bonding |
US11133344B2 (en) | 2010-10-13 | 2021-09-28 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors |
US10943934B2 (en) | 2010-10-13 | 2021-03-09 | Monolithic 3D Inc. | Multilevel semiconductor device and structure |
US11043523B1 (en) | 2010-10-13 | 2021-06-22 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors |
US11855114B2 (en) | 2010-10-13 | 2023-12-26 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors and wafer bonding |
US8389971B2 (en) | 2010-10-14 | 2013-03-05 | Sandisk 3D Llc | Memory cells having storage elements that share material layers with steering elements and methods of forming the same |
US8841648B2 (en) | 2010-10-14 | 2014-09-23 | Sandisk 3D Llc | Multi-level memory arrays with memory cells that employ bipolar storage elements and methods of forming the same |
WO2012060253A1 (en) * | 2010-11-05 | 2012-05-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8409989B2 (en) | 2010-11-11 | 2013-04-02 | International Business Machines Corporation | Structure and method to fabricate a body contact |
US8462580B2 (en) | 2010-11-17 | 2013-06-11 | Sandisk 3D Llc | Memory system with reversible resistivity-switching using pulses of alternatrie polarity |
US8355271B2 (en) | 2010-11-17 | 2013-01-15 | Sandisk 3D Llc | Memory system with reversible resistivity-switching using pulses of alternate polarity |
US11121021B2 (en) | 2010-11-18 | 2021-09-14 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11211279B2 (en) | 2010-11-18 | 2021-12-28 | Monolithic 3D Inc. | Method for processing a 3D integrated circuit and structure |
US11610802B2 (en) | 2010-11-18 | 2023-03-21 | Monolithic 3D Inc. | Method for producing a 3D semiconductor device and structure with single crystal transistors and metal gate electrodes |
US11569117B2 (en) | 2010-11-18 | 2023-01-31 | Monolithic 3D Inc. | 3D semiconductor device and structure with single-crystal layers |
US11018042B1 (en) | 2010-11-18 | 2021-05-25 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
US11355381B2 (en) | 2010-11-18 | 2022-06-07 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
US11495484B2 (en) | 2010-11-18 | 2022-11-08 | Monolithic 3D Inc. | 3D semiconductor devices and structures with at least two single-crystal layers |
US11923230B1 (en) | 2010-11-18 | 2024-03-05 | Monolithic 3D Inc. | 3D semiconductor device and structure with bonding |
US11735462B2 (en) | 2010-11-18 | 2023-08-22 | Monolithic 3D Inc. | 3D semiconductor device and structure with single-crystal layers |
US11784082B2 (en) | 2010-11-18 | 2023-10-10 | Monolithic 3D Inc. | 3D semiconductor device and structure with bonding |
US11508605B2 (en) | 2010-11-18 | 2022-11-22 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
US11482438B2 (en) | 2010-11-18 | 2022-10-25 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor memory device and structure |
US11521888B2 (en) | 2010-11-18 | 2022-12-06 | Monolithic 3D Inc. | 3D semiconductor device and structure with high-k metal gate transistors |
US11164770B1 (en) | 2010-11-18 | 2021-11-02 | Monolithic 3D Inc. | Method for producing a 3D semiconductor memory device and structure |
US11094576B1 (en) | 2010-11-18 | 2021-08-17 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor memory device and structure |
US11862503B2 (en) | 2010-11-18 | 2024-01-02 | Monolithic 3D Inc. | Method for producing a 3D semiconductor device and structure with memory cells and multiple metal layers |
US11804396B2 (en) | 2010-11-18 | 2023-10-31 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers |
US11854857B1 (en) | 2010-11-18 | 2023-12-26 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers |
US11482439B2 (en) | 2010-11-18 | 2022-10-25 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor memory device comprising charge trap junction-less transistors |
US11004719B1 (en) | 2010-11-18 | 2021-05-11 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor memory device and structure |
US11443971B2 (en) | 2010-11-18 | 2022-09-13 | Monolithic 3D Inc. | 3D semiconductor device and structure with memory |
US11901210B2 (en) | 2010-11-18 | 2024-02-13 | Monolithic 3D Inc. | 3D semiconductor device and structure with memory |
US11355380B2 (en) | 2010-11-18 | 2022-06-07 | Monolithic 3D Inc. | Methods for producing 3D semiconductor memory device and structure utilizing alignment marks |
US11031275B2 (en) | 2010-11-18 | 2021-06-08 | Monolithic 3D Inc. | 3D semiconductor device and structure with memory |
US11615977B2 (en) | 2010-11-18 | 2023-03-28 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
US11107721B2 (en) | 2010-11-18 | 2021-08-31 | Monolithic 3D Inc. | 3D semiconductor device and structure with NAND logic |
US8854865B2 (en) * | 2010-11-24 | 2014-10-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device |
EP2731109B1 (en) | 2010-12-14 | 2016-09-07 | SanDisk Technologies LLC | Architecture for three dimensional non-volatile storage with vertical bit lines |
US8824183B2 (en) | 2010-12-14 | 2014-09-02 | Sandisk 3D Llc | Non-volatile memory having 3D array of read/write elements with vertical bit lines and select devices and methods thereof |
US8546961B2 (en) | 2011-01-10 | 2013-10-01 | International Business Machines Corporation | Alignment marks to enable 3D integration |
TWI473105B (zh) * | 2011-01-18 | 2015-02-11 | Macronix Int Co Ltd | 具有錯誤自動檢查與更正位元之三維記憶體結構 |
TWI564890B (zh) * | 2011-01-26 | 2017-01-01 | 半導體能源研究所股份有限公司 | 記憶體裝置及半導體裝置 |
US8866124B2 (en) | 2011-02-02 | 2014-10-21 | Sandisk 3D Llc | Diodes with native oxide regions for use in memory arrays and methods of forming the same |
US20120223414A1 (en) | 2011-03-02 | 2012-09-06 | Schricker April D | Methods for increasing bottom electrode performance in carbon-based memory devices |
US8553476B2 (en) | 2011-03-03 | 2013-10-08 | Sandisk 3D Llc | Three dimensional memory system with page of data across word lines |
US8374051B2 (en) | 2011-03-03 | 2013-02-12 | Sandisk 3D Llc | Three dimensional memory system with column pipeline |
US9053766B2 (en) | 2011-03-03 | 2015-06-09 | Sandisk 3D, Llc | Three dimensional memory system with intelligent select circuit |
US8975670B2 (en) | 2011-03-06 | 2015-03-10 | Monolithic 3D Inc. | Semiconductor device and structure for heat removal |
US9432298B1 (en) | 2011-12-09 | 2016-08-30 | P4tents1, LLC | System, method, and computer program product for improving memory systems |
US8699293B2 (en) | 2011-04-27 | 2014-04-15 | Sandisk 3D Llc | Non-volatile storage system with dual block programming |
US10388568B2 (en) | 2011-06-28 | 2019-08-20 | Monolithic 3D Inc. | 3D semiconductor device and system |
US8866121B2 (en) | 2011-07-29 | 2014-10-21 | Sandisk 3D Llc | Current-limiting layer and a current-reducing layer in a memory device |
US8659001B2 (en) | 2011-09-01 | 2014-02-25 | Sandisk 3D Llc | Defect gradient to boost nonvolatile memory performance |
US20130075685A1 (en) | 2011-09-22 | 2013-03-28 | Yubao Li | Methods and apparatus for including an air gap in carbon-based memory devices |
US8687399B2 (en) | 2011-10-02 | 2014-04-01 | Monolithic 3D Inc. | Semiconductor device and structure |
US9029173B2 (en) | 2011-10-18 | 2015-05-12 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
JP2013114644A (ja) | 2011-12-01 | 2013-06-10 | Fujitsu Ltd | メモリモジュールおよび半導体記憶装置 |
CN103946980B (zh) * | 2011-12-02 | 2017-06-20 | 英特尔公司 | 允许装置互连中的变化的堆栈式存储器 |
US8637413B2 (en) | 2011-12-02 | 2014-01-28 | Sandisk 3D Llc | Nonvolatile resistive memory element with a passivated switching layer |
US20130148404A1 (en) | 2011-12-08 | 2013-06-13 | Abhijit Bandyopadhyay | Antifuse-based memory cells having multiple memory states and methods of forming the same |
US9269425B2 (en) | 2011-12-30 | 2016-02-23 | Sandisk 3D Llc | Low forming voltage non-volatile storage device |
US8698119B2 (en) | 2012-01-19 | 2014-04-15 | Sandisk 3D Llc | Nonvolatile memory device using a tunnel oxide as a current limiter element |
US8686386B2 (en) | 2012-02-17 | 2014-04-01 | Sandisk 3D Llc | Nonvolatile memory device using a varistor as a current limiter element |
US9000557B2 (en) | 2012-03-17 | 2015-04-07 | Zvi Or-Bach | Semiconductor device and structure |
US8933715B2 (en) | 2012-04-08 | 2015-01-13 | Elm Technology Corporation | Configurable vertical integration |
US11616004B1 (en) | 2012-04-09 | 2023-03-28 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and a connective path |
US11410912B2 (en) | 2012-04-09 | 2022-08-09 | Monolithic 3D Inc. | 3D semiconductor device with vias and isolation layers |
US11164811B2 (en) | 2012-04-09 | 2021-11-02 | Monolithic 3D Inc. | 3D semiconductor device with isolation layers and oxide-to-oxide bonding |
US11476181B1 (en) | 2012-04-09 | 2022-10-18 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
US11881443B2 (en) | 2012-04-09 | 2024-01-23 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and a connective path |
US11694944B1 (en) | 2012-04-09 | 2023-07-04 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and a connective path |
US11088050B2 (en) | 2012-04-09 | 2021-08-10 | Monolithic 3D Inc. | 3D semiconductor device with isolation layers |
US10600888B2 (en) | 2012-04-09 | 2020-03-24 | Monolithic 3D Inc. | 3D semiconductor device |
US11735501B1 (en) | 2012-04-09 | 2023-08-22 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and a connective path |
US8557632B1 (en) | 2012-04-09 | 2013-10-15 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
US11594473B2 (en) | 2012-04-09 | 2023-02-28 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and a connective path |
US20130292634A1 (en) | 2012-05-07 | 2013-11-07 | Yung-Tin Chen | Resistance-switching memory cells having reduced metal migration and low current operation and methods of forming the same |
US20130304450A1 (en) * | 2012-05-08 | 2013-11-14 | StarDFX Technologies, Inc. | Method for Unified High-Level Hardware Description Language Simulation Based on Parallel Computing Platforms |
US9171584B2 (en) | 2012-05-15 | 2015-10-27 | Sandisk 3D Llc | Three dimensional non-volatile storage with interleaved vertical select devices above and below vertical bit lines |
US8828884B2 (en) | 2012-05-23 | 2014-09-09 | Sandisk Technologies Inc. | Multi-level contact to a 3D memory array and method of making |
US8658499B2 (en) | 2012-07-09 | 2014-02-25 | Sandisk Technologies Inc. | Three dimensional NAND device and method of charge trap layer separation and floating gate formation in the NAND device |
US9129715B2 (en) | 2012-09-05 | 2015-09-08 | SVXR, Inc. | High speed x-ray inspection microscope |
US9853053B2 (en) | 2012-09-10 | 2017-12-26 | 3B Technologies, Inc. | Three dimension integrated circuits employing thin film transistors |
US8686428B1 (en) | 2012-11-16 | 2014-04-01 | Monolithic 3D Inc. | Semiconductor device and structure |
US8574929B1 (en) | 2012-11-16 | 2013-11-05 | Monolithic 3D Inc. | Method to form a 3D semiconductor device and structure |
US9472284B2 (en) * | 2012-11-19 | 2016-10-18 | Silicon Storage Technology, Inc. | Three-dimensional flash memory system |
US9111597B2 (en) * | 2012-12-20 | 2015-08-18 | Macronix International Co., Ltd. | Memory device structure with decoders in a device level separate from the array level |
US11018116B2 (en) | 2012-12-22 | 2021-05-25 | Monolithic 3D Inc. | Method to form a 3D semiconductor device and structure |
US11967583B2 (en) | 2012-12-22 | 2024-04-23 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
US11063024B1 (en) | 2012-12-22 | 2021-07-13 | Monlithic 3D Inc. | Method to form a 3D semiconductor device and structure |
US11217565B2 (en) | 2012-12-22 | 2022-01-04 | Monolithic 3D Inc. | Method to form a 3D semiconductor device and structure |
US8674470B1 (en) | 2012-12-22 | 2014-03-18 | Monolithic 3D Inc. | Semiconductor device and structure |
US11961827B1 (en) | 2012-12-22 | 2024-04-16 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
US11309292B2 (en) | 2012-12-22 | 2022-04-19 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
US11784169B2 (en) | 2012-12-22 | 2023-10-10 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
US11916045B2 (en) | 2012-12-22 | 2024-02-27 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
US9871034B1 (en) | 2012-12-29 | 2018-01-16 | Monolithic 3D Inc. | Semiconductor device and structure |
US11004694B1 (en) | 2012-12-29 | 2021-05-11 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US9385058B1 (en) | 2012-12-29 | 2016-07-05 | Monolithic 3D Inc. | Semiconductor device and structure |
US11087995B1 (en) | 2012-12-29 | 2021-08-10 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11430667B2 (en) | 2012-12-29 | 2022-08-30 | Monolithic 3D Inc. | 3D semiconductor device and structure with bonding |
US10892169B2 (en) | 2012-12-29 | 2021-01-12 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10651054B2 (en) | 2012-12-29 | 2020-05-12 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11177140B2 (en) | 2012-12-29 | 2021-11-16 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10903089B1 (en) | 2012-12-29 | 2021-01-26 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11430668B2 (en) | 2012-12-29 | 2022-08-30 | Monolithic 3D Inc. | 3D semiconductor device and structure with bonding |
US10600657B2 (en) | 2012-12-29 | 2020-03-24 | Monolithic 3D Inc | 3D semiconductor device and structure |
US10115663B2 (en) | 2012-12-29 | 2018-10-30 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US20140241031A1 (en) | 2013-02-28 | 2014-08-28 | Sandisk 3D Llc | Dielectric-based memory cells having multi-level one-time programmable and bi-level rewriteable operating modes and methods of forming the same |
US9007810B2 (en) | 2013-02-28 | 2015-04-14 | Sandisk 3D Llc | ReRAM forming with reset and iload compensation |
US9411722B2 (en) | 2013-03-04 | 2016-08-09 | Sandisk Technologies Llc | Asynchronous FIFO buffer for memory access |
US9202694B2 (en) | 2013-03-04 | 2015-12-01 | Sandisk 3D Llc | Vertical bit line non-volatile memory systems and methods of fabrication |
US9165933B2 (en) | 2013-03-07 | 2015-10-20 | Sandisk 3D Llc | Vertical bit line TFT decoder for high voltage operation |
US20140252298A1 (en) | 2013-03-10 | 2014-09-11 | Sandisk 3D Llc | Methods and apparatus for metal oxide reversible resistance-switching memory devices |
US10325651B2 (en) | 2013-03-11 | 2019-06-18 | Monolithic 3D Inc. | 3D semiconductor device with stacked memory |
US8902663B1 (en) | 2013-03-11 | 2014-12-02 | Monolithic 3D Inc. | Method of maintaining a memory state |
US11935949B1 (en) | 2013-03-11 | 2024-03-19 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and memory cells |
US11869965B2 (en) | 2013-03-11 | 2024-01-09 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and memory cells |
US9230987B2 (en) | 2014-02-20 | 2016-01-05 | Sandisk Technologies Inc. | Multilevel memory stack structure and methods of manufacturing the same |
US11923374B2 (en) | 2013-03-12 | 2024-03-05 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
US11398569B2 (en) | 2013-03-12 | 2022-07-26 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11088130B2 (en) | 2014-01-28 | 2021-08-10 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US8994404B1 (en) | 2013-03-12 | 2015-03-31 | Monolithic 3D Inc. | Semiconductor device and structure |
US10840239B2 (en) | 2014-08-26 | 2020-11-17 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US8947972B2 (en) | 2013-03-15 | 2015-02-03 | Sandisk 3D Llc | Dynamic address grouping for parallel programming in non-volatile memory |
US9223665B2 (en) | 2013-03-15 | 2015-12-29 | Micron Technology, Inc. | Apparatuses and methods for memory testing and repair |
US9117749B1 (en) | 2013-03-15 | 2015-08-25 | Monolithic 3D Inc. | Semiconductor device and structure |
US8947944B2 (en) | 2013-03-15 | 2015-02-03 | Sandisk 3D Llc | Program cycle skip evaluation before write operations in non-volatile memory |
US10224279B2 (en) | 2013-03-15 | 2019-03-05 | Monolithic 3D Inc. | Semiconductor device and structure |
US9093480B2 (en) | 2013-04-01 | 2015-07-28 | Sandisk Technologies Inc. | Spacer passivation for high aspect ratio etching of multilayer stacks for three dimensional NAND device |
US9099496B2 (en) | 2013-04-01 | 2015-08-04 | Sandisk Technologies Inc. | Method of forming an active area with floating gate negative offset profile in FG NAND memory |
US11720736B2 (en) | 2013-04-15 | 2023-08-08 | Monolithic 3D Inc. | Automation methods for 3D integrated circuits and devices |
US11341309B1 (en) | 2013-04-15 | 2022-05-24 | Monolithic 3D Inc. | Automation for monolithic 3D devices |
US9021414B1 (en) | 2013-04-15 | 2015-04-28 | Monolithic 3D Inc. | Automation for monolithic 3D devices |
US11030371B2 (en) | 2013-04-15 | 2021-06-08 | Monolithic 3D Inc. | Automation for monolithic 3D devices |
US11574109B1 (en) | 2013-04-15 | 2023-02-07 | Monolithic 3D Inc | Automation methods for 3D integrated circuits and devices |
US11270055B1 (en) | 2013-04-15 | 2022-03-08 | Monolithic 3D Inc. | Automation for monolithic 3D devices |
US11487928B2 (en) | 2013-04-15 | 2022-11-01 | Monolithic 3D Inc. | Automation for monolithic 3D devices |
KR101531843B1 (ko) * | 2013-05-02 | 2015-06-26 | 하나 마이크론(주) | 집적회로 소자 패키지의 제조 방법 |
US9252151B2 (en) | 2013-07-08 | 2016-02-02 | Sandisk Technologies Inc. | Three dimensional NAND device with birds beak containing floating gates and method of making thereof |
TWI493568B (zh) * | 2013-08-19 | 2015-07-21 | Ind Tech Res Inst | 記憶體裝置 |
US9105468B2 (en) | 2013-09-06 | 2015-08-11 | Sandisk 3D Llc | Vertical bit line wide band gap TFT decoder |
US9524976B2 (en) | 2013-09-15 | 2016-12-20 | Sandisk Technologies Llc | Method of integrating select gate source and memory hole for three-dimensional non-volatile memory device |
US9230980B2 (en) | 2013-09-15 | 2016-01-05 | Sandisk Technologies Inc. | Single-semiconductor-layer channel in a memory opening for a three-dimensional non-volatile memory device |
KR102136845B1 (ko) | 2013-09-16 | 2020-07-23 | 삼성전자 주식회사 | 적층형 이미지 센서 및 그 제조방법 |
US9023719B2 (en) | 2013-09-17 | 2015-05-05 | Sandisk Technologies Inc. | High aspect ratio memory hole channel contact formation |
US9230973B2 (en) | 2013-09-17 | 2016-01-05 | Sandisk Technologies Inc. | Methods of fabricating a three-dimensional non-volatile memory device |
US9711225B2 (en) | 2013-10-16 | 2017-07-18 | Sandisk Technologies Llc | Regrouping and skipping cycles in non-volatile memory |
US9449983B2 (en) | 2013-12-19 | 2016-09-20 | Sandisk Technologies Llc | Three dimensional NAND device with channel located on three sides of lower select gate and method of making thereof |
US9449924B2 (en) | 2013-12-20 | 2016-09-20 | Sandisk Technologies Llc | Multilevel contact to a 3D memory array and method of making thereof |
US9263379B2 (en) | 2013-12-31 | 2016-02-16 | Freescale Semiconductor, Inc. | IC package with metal interconnect structure implemented between metal layers of die and interposer |
US9230905B2 (en) | 2014-01-08 | 2016-01-05 | Sandisk 3D Llc | Trench multilevel contact to a 3D memory array and method of making thereof |
US11107808B1 (en) | 2014-01-28 | 2021-08-31 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11031394B1 (en) | 2014-01-28 | 2021-06-08 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10297586B2 (en) | 2015-03-09 | 2019-05-21 | Monolithic 3D Inc. | Methods for processing a 3D semiconductor device |
US9362338B2 (en) | 2014-03-03 | 2016-06-07 | Sandisk Technologies Inc. | Vertical thin film transistors in non-volatile storage systems |
US9379246B2 (en) | 2014-03-05 | 2016-06-28 | Sandisk Technologies Inc. | Vertical thin film transistor selection devices and methods of fabrication |
US9343507B2 (en) | 2014-03-12 | 2016-05-17 | Sandisk 3D Llc | Dual channel vertical field effect transistor including an embedded electrode |
US9331088B2 (en) | 2014-03-25 | 2016-05-03 | Sandisk 3D Llc | Transistor device with gate bottom isolation and method of making thereof |
KR102258739B1 (ko) | 2014-03-26 | 2021-06-02 | 삼성전자주식회사 | 하이브리드 적층 구조를 갖는 반도체 소자 및 그 제조방법 |
US9224747B2 (en) | 2014-03-26 | 2015-12-29 | Sandisk Technologies Inc. | Vertical NAND device with shared word line steps |
US9443867B2 (en) | 2014-04-30 | 2016-09-13 | Sandisk Technologies Llc | Method of making damascene select gate in memory device |
US9552991B2 (en) | 2014-04-30 | 2017-01-24 | Sandisk Technologies Llc | Trench vertical NAND and method of making thereof |
US9331094B2 (en) | 2014-04-30 | 2016-05-03 | Sandisk Technologies Inc. | Method of selective filling of memory openings |
US9548313B2 (en) * | 2014-05-30 | 2017-01-17 | Sandisk Technologies Llc | Method of making a monolithic three dimensional NAND string using a select gate etch stop layer |
US9553146B2 (en) | 2014-06-05 | 2017-01-24 | Sandisk Technologies Llc | Three dimensional NAND device having a wavy charge storage layer |
US9559117B2 (en) | 2014-06-17 | 2017-01-31 | Sandisk Technologies Llc | Three-dimensional non-volatile memory device having a silicide source line and method of making thereof |
US9524779B2 (en) | 2014-06-24 | 2016-12-20 | Sandisk Technologies Llc | Three dimensional vertical NAND device with floating gates |
US9768270B2 (en) | 2014-06-25 | 2017-09-19 | Sandisk Technologies Llc | Method of selectively depositing floating gate material in a memory device |
US9379124B2 (en) | 2014-06-25 | 2016-06-28 | Sandisk Technologies Inc. | Vertical floating gate NAND with selectively deposited ALD metal films |
US9455263B2 (en) | 2014-06-27 | 2016-09-27 | Sandisk Technologies Llc | Three dimensional NAND device with channel contacting conductive source line and method of making thereof |
US9305932B2 (en) | 2014-06-30 | 2016-04-05 | Sandisk Technologies Inc. | Methods of making three dimensional NAND devices |
US9397107B2 (en) | 2014-06-30 | 2016-07-19 | Sandisk Technologies Llc | Methods of making three dimensional NAND devices |
US9177966B1 (en) | 2014-07-08 | 2015-11-03 | Sandisk Technologies Inc. | Three dimensional NAND devices with air gap or low-k core |
US9627009B2 (en) | 2014-07-25 | 2017-04-18 | Sandisk Technologies Llc | Interleaved grouped word lines for three dimensional non-volatile storage |
US9570460B2 (en) | 2014-07-29 | 2017-02-14 | Sandisk Technologies Llc | Spacer passivation for high-aspect ratio opening film removal and cleaning |
US9437658B2 (en) | 2014-08-05 | 2016-09-06 | Sandisk Technologies Llc | Fully isolated selector for memory device |
US9356031B2 (en) | 2014-08-11 | 2016-05-31 | Sandisk Technologies Inc. | Three dimensional NAND string memory devices with voids enclosed between control gate electrodes |
US9136130B1 (en) | 2014-08-11 | 2015-09-15 | Sandisk Technologies Inc. | Three dimensional NAND string with discrete charge trap segments |
US9887207B2 (en) | 2014-08-18 | 2018-02-06 | Sandisk Technologies Llc | Three dimensional NAND device having dummy memory holes and method of making thereof |
KR102204391B1 (ko) | 2014-08-18 | 2021-01-18 | 삼성전자주식회사 | 공유 가능한 ecc 셀 어레이를 갖는 메모리 장치 |
US9583539B2 (en) | 2014-08-19 | 2017-02-28 | Sandisk Technologies Llc | Word line connection for memory device and method of making thereof |
US9230983B1 (en) | 2014-08-20 | 2016-01-05 | Sandisk Technologies Inc. | Metal word lines for three dimensional memory devices |
WO2016028621A1 (en) | 2014-08-20 | 2016-02-25 | Sandisk Technologies Inc. | Floating gate ultrahigh density vertical nand flash memory and method of making thereof |
US9576975B2 (en) | 2014-08-26 | 2017-02-21 | Sandisk Technologies Llc | Monolithic three-dimensional NAND strings and methods of fabrication thereof |
US9236392B1 (en) | 2014-08-26 | 2016-01-12 | Sandisk Technologies Inc. | Multiheight electrically conductive via contacts for a multilevel interconnect structure |
US9230974B1 (en) | 2014-08-26 | 2016-01-05 | Sandisk Technologies Inc. | Methods of selective removal of blocking dielectric in NAND memory strings |
US9691884B2 (en) | 2014-08-26 | 2017-06-27 | Sandisk Technologies Llc | Monolithic three dimensional NAND strings and methods of fabrication thereof |
US9401309B2 (en) | 2014-08-26 | 2016-07-26 | Sandisk Technologies Llc | Multiheight contact via structures for a multilevel interconnect structure |
US9601502B2 (en) | 2014-08-26 | 2017-03-21 | Sandisk Technologies Llc | Multiheight contact via structures for a multilevel interconnect structure |
US9620514B2 (en) | 2014-09-05 | 2017-04-11 | Sandisk Technologies Llc | 3D semicircular vertical NAND string with self aligned floating gate or charge trap cell memory cells and methods of fabricating and operating the same |
US9666594B2 (en) | 2014-09-05 | 2017-05-30 | Sandisk Technologies Llc | Multi-charge region memory cells for a vertical NAND device |
US9455267B2 (en) | 2014-09-19 | 2016-09-27 | Sandisk Technologies Llc | Three dimensional NAND device having nonlinear control gate electrodes and method of making thereof |
US9412749B1 (en) | 2014-09-19 | 2016-08-09 | Sandisk Technologies Llc | Three dimensional memory device having well contact pillar and method of making thereof |
US9666590B2 (en) | 2014-09-24 | 2017-05-30 | Sandisk Technologies Llc | High stack 3D memory and method of making |
US9515085B2 (en) | 2014-09-26 | 2016-12-06 | Sandisk Technologies Llc | Vertical memory device with bit line air gap |
US9230984B1 (en) * | 2014-09-30 | 2016-01-05 | Sandisk Technologies Inc | Three dimensional memory device having comb-shaped source electrode and methods of making thereof |
US9331093B2 (en) | 2014-10-03 | 2016-05-03 | Sandisk Technologies Inc. | Three dimensional NAND device with silicon germanium heterostructure channel |
US9368509B2 (en) | 2014-10-15 | 2016-06-14 | Sandisk Technologies Inc. | Three-dimensional memory structure having self-aligned drain regions and methods of making thereof |
US9305934B1 (en) | 2014-10-17 | 2016-04-05 | Sandisk Technologies Inc. | Vertical NAND device containing peripheral devices on epitaxial semiconductor pedestal |
US9530787B2 (en) | 2014-10-20 | 2016-12-27 | Sandisk Technologies Llc | Batch contacts for multiple electrically conductive layers |
US9305937B1 (en) | 2014-10-21 | 2016-04-05 | Sandisk Technologies Inc. | Bottom recess process for an outer blocking dielectric layer inside a memory opening |
US9449981B2 (en) | 2014-10-21 | 2016-09-20 | Sandisk Technologies Llc | Three dimensional NAND string memory devices and methods of fabrication thereof |
US9825051B2 (en) | 2014-10-22 | 2017-11-21 | Sandisk Technologies Llc | Three dimensional NAND device containing fluorine doped layer and method of making thereof |
US20160118391A1 (en) | 2014-10-22 | 2016-04-28 | SanDisk Technologies, Inc. | Deuterium anneal of semiconductor channels in a three-dimensional memory structure |
US9379132B2 (en) | 2014-10-24 | 2016-06-28 | Sandisk Technologies Inc. | NAND memory strings and methods of fabrication thereof |
US9449980B2 (en) | 2014-10-31 | 2016-09-20 | Sandisk Technologies Llc | Band gap tailoring for a tunneling dielectric for a three-dimensional memory structure |
US9620712B2 (en) | 2014-10-31 | 2017-04-11 | Sandisk Technologies Llc | Concave word line and convex interlayer dielectric for protecting a read/write layer |
US9230979B1 (en) | 2014-10-31 | 2016-01-05 | Sandisk Technologies Inc. | High dielectric constant etch stop layer for a memory structure |
US9666799B2 (en) | 2014-10-31 | 2017-05-30 | Sandisk Technologies Llc | Concave word line and convex interlayer dielectric for protecting a read/write layer |
US9305849B1 (en) | 2014-11-12 | 2016-04-05 | Sandisk Technologies Inc. | Method of making a three dimensional NAND device |
US9236396B1 (en) | 2014-11-12 | 2016-01-12 | Sandisk Technologies Inc. | Three dimensional NAND device and method of making thereof |
US9419135B2 (en) | 2014-11-13 | 2016-08-16 | Sandisk Technologies Llc | Three dimensional NAND device having reduced wafer bowing and method of making thereof |
US9698152B2 (en) | 2014-11-13 | 2017-07-04 | Sandisk Technologies Llc | Three-dimensional memory structure with multi-component contact via structure and method of making thereof |
US9524981B2 (en) | 2015-05-04 | 2016-12-20 | Sandisk Technologies Llc | Three dimensional memory device with hybrid source electrode for wafer warpage reduction |
US9496419B2 (en) | 2014-11-25 | 2016-11-15 | Sandisk Technologies Llc | Ruthenium nucleation layer for control gate electrodes in a memory structure |
US9698223B2 (en) | 2014-11-25 | 2017-07-04 | Sandisk Technologies Llc | Memory device containing stress-tunable control gate electrodes |
US9570455B2 (en) | 2014-11-25 | 2017-02-14 | Sandisk Technologies Llc | Metal word lines for three dimensional memory devices |
US9728499B2 (en) | 2014-11-26 | 2017-08-08 | Sandisk Technologies Llc | Set of stepped surfaces formation for a multilevel interconnect structure |
EP3224865B1 (en) | 2014-11-26 | 2019-12-18 | SanDisk Technologies LLC | Set of stepped surfaces formation for a multilevel interconnect structure |
US9502429B2 (en) | 2014-11-26 | 2016-11-22 | Sandisk Technologies Llc | Set of stepped surfaces formation for a multilevel interconnect structure |
US9754956B2 (en) | 2014-12-04 | 2017-09-05 | Sandisk Technologies Llc | Uniform thickness blocking dielectric portions in a three-dimensional memory structure |
US9793288B2 (en) | 2014-12-04 | 2017-10-17 | Sandisk Technologies Llc | Methods of fabricating memory device with spaced-apart semiconductor charge storage regions |
US9553100B2 (en) | 2014-12-04 | 2017-01-24 | Sandisk Techologies Llc | Selective floating gate semiconductor material deposition in a three-dimensional memory structure |
US9576971B2 (en) | 2014-12-09 | 2017-02-21 | Sandisk Technologies Llc | Three-dimensional memory structure having a back gate electrode |
US9355727B1 (en) | 2014-12-09 | 2016-05-31 | Sandisk Technologies Inc. | Three-dimensional memory structure having a back gate electrode |
US9484357B2 (en) | 2014-12-16 | 2016-11-01 | Sandisk Technologies Llc | Selective blocking dielectric formation in a three-dimensional memory structure |
US9515079B2 (en) | 2014-12-16 | 2016-12-06 | Sandisk Technologies Llc | Three dimensional memory device with blocking dielectric having enhanced protection against fluorine attack |
WO2016099580A2 (en) | 2014-12-23 | 2016-06-23 | Lupino James John | Three dimensional integrated circuits employing thin film transistors |
US9711524B2 (en) | 2015-01-13 | 2017-07-18 | Sandisk Technologies Llc | Three-dimensional memory device containing plural select gate transistors having different characteristics and method of making thereof |
US9478558B2 (en) | 2015-01-20 | 2016-10-25 | Sandisk Technologies Llc | Semiconductor structure with concave blocking dielectric sidewall and method of making thereof by isotropically etching the blocking dielectric layer |
US9437543B2 (en) | 2015-01-22 | 2016-09-06 | Sandisk Technologies Llc | Composite contact via structure containing an upper portion which fills a cavity within a lower portion |
US9780182B2 (en) | 2015-02-04 | 2017-10-03 | Sandisk Technologies Llc | Molybdenum-containing conductive layers for control gate electrodes in a memory structure |
US9984963B2 (en) | 2015-02-04 | 2018-05-29 | Sandisk Technologies Llc | Cobalt-containing conductive layers for control gate electrodes in a memory structure |
US10741572B2 (en) | 2015-02-04 | 2020-08-11 | Sandisk Technologies Llc | Three-dimensional memory device having multilayer word lines containing selectively grown cobalt or ruthenium and method of making the same |
US9419058B1 (en) | 2015-02-05 | 2016-08-16 | Sandisk Technologies Llc | Memory device with comb-shaped electrode having a plurality of electrode fingers and method of making thereof |
US9627395B2 (en) | 2015-02-11 | 2017-04-18 | Sandisk Technologies Llc | Enhanced channel mobility three-dimensional memory structure and method of making thereof |
US9484296B2 (en) | 2015-02-12 | 2016-11-01 | Sandisk Technologies Llc | Self-aligned integrated line and via structure for a three-dimensional semiconductor device |
US9583615B2 (en) | 2015-02-17 | 2017-02-28 | Sandisk Technologies Llc | Vertical transistor and local interconnect structure |
US9343358B1 (en) | 2015-02-23 | 2016-05-17 | Sandisk Technologies Inc. | Three-dimensional memory device with stress compensation layer within a word line stack |
US9698202B2 (en) | 2015-03-02 | 2017-07-04 | Sandisk Technologies Llc | Parallel bit line three-dimensional resistive random access memory |
US9870945B2 (en) | 2015-03-10 | 2018-01-16 | Sandisk Technologies Llc | Crystalline layer stack for forming conductive layers in a three-dimensional memory structure |
US9530788B2 (en) | 2015-03-17 | 2016-12-27 | Sandisk Technologies Llc | Metallic etch stop layer in a three-dimensional memory structure |
US9812461B2 (en) | 2015-03-17 | 2017-11-07 | Sandisk Technologies Llc | Honeycomb cell structure three-dimensional non-volatile memory device |
US9443866B1 (en) | 2015-03-24 | 2016-09-13 | Sandisk Technologies Llc | Mid-tunneling dielectric band gap modification for enhanced data retention in a three-dimensional semiconductor device |
US9613975B2 (en) | 2015-03-31 | 2017-04-04 | Sandisk Technologies Llc | Bridge line structure for bit line connection in a three-dimensional semiconductor device |
US9799671B2 (en) | 2015-04-07 | 2017-10-24 | Sandisk Technologies Llc | Three-dimensional integration schemes for reducing fluorine-induced electrical shorts |
US9450023B1 (en) | 2015-04-08 | 2016-09-20 | Sandisk Technologies Llc | Vertical bit line non-volatile memory with recessed word lines |
US9524977B2 (en) | 2015-04-15 | 2016-12-20 | Sandisk Technologies Llc | Metal-semiconductor alloy region for enhancing on current in a three-dimensional memory structure |
US11056468B1 (en) | 2015-04-19 | 2021-07-06 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11011507B1 (en) | 2015-04-19 | 2021-05-18 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10825779B2 (en) | 2015-04-19 | 2020-11-03 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10381328B2 (en) | 2015-04-19 | 2019-08-13 | Monolithic 3D Inc. | Semiconductor device and structure |
US9601508B2 (en) | 2015-04-27 | 2017-03-21 | Sandisk Technologies Llc | Blocking oxide in memory opening integration scheme for three-dimensional memory structure |
US9397046B1 (en) | 2015-04-29 | 2016-07-19 | Sandisk Technologies Llc | Fluorine-free word lines for three-dimensional memory devices |
US9627403B2 (en) | 2015-04-30 | 2017-04-18 | Sandisk Technologies Llc | Multilevel memory stack structure employing support pillar structures |
US9666281B2 (en) | 2015-05-08 | 2017-05-30 | Sandisk Technologies Llc | Three-dimensional P-I-N memory device and method reading thereof using hole current detection |
US10074661B2 (en) | 2015-05-08 | 2018-09-11 | Sandisk Technologies Llc | Three-dimensional junction memory device and method reading thereof using hole current detection |
US9859422B2 (en) | 2015-05-28 | 2018-01-02 | Sandisk Technologies Llc | Field effect transistor with elevated active regions and methods of manufacturing the same |
US9443861B1 (en) | 2015-05-28 | 2016-09-13 | Sandisk Technologies Llc | Fluorine-blocking insulating spacer for backside contact structure of three-dimensional memory structures |
EP3262687B1 (en) | 2015-06-08 | 2021-04-07 | SanDisk Technologies LLC | Three-dimensional memory device having a heterostructure quantum well channel |
US9646981B2 (en) | 2015-06-15 | 2017-05-09 | Sandisk Technologies Llc | Passive devices for integration with three-dimensional memory devices |
EP3262680B1 (en) | 2015-06-15 | 2019-08-21 | SanDisk Technologies LLC | Passive devices for integration with three-dimensional memory devices |
US9589981B2 (en) | 2015-06-15 | 2017-03-07 | Sandisk Technologies Llc | Passive devices for integration with three-dimensional memory devices |
US9419012B1 (en) | 2015-06-19 | 2016-08-16 | Sandisk Technologies Llc | Three-dimensional memory structure employing air gap isolation |
US9356043B1 (en) | 2015-06-22 | 2016-05-31 | Sandisk Technologies Inc. | Three-dimensional memory devices containing memory stack structures with position-independent threshold voltage |
US9613977B2 (en) | 2015-06-24 | 2017-04-04 | Sandisk Technologies Llc | Differential etch of metal oxide blocking dielectric layer for three-dimensional memory devices |
US10622368B2 (en) | 2015-06-24 | 2020-04-14 | Sandisk Technologies Llc | Three-dimensional memory device with semicircular metal-semiconductor alloy floating gate electrodes and methods of making thereof |
US9530785B1 (en) | 2015-07-21 | 2016-12-27 | Sandisk Technologies Llc | Three-dimensional memory devices having a single layer channel and methods of making thereof |
US9627399B2 (en) | 2015-07-24 | 2017-04-18 | Sandisk Technologies Llc | Three-dimensional memory device with metal and silicide control gates |
US9679906B2 (en) | 2015-08-11 | 2017-06-13 | Sandisk Technologies Llc | Three-dimensional memory devices containing memory block bridges |
US9449987B1 (en) | 2015-08-21 | 2016-09-20 | Sandisk Technologies Llc | Three dimensional memory device with epitaxial semiconductor pedestal for peripheral transistors |
US9543318B1 (en) | 2015-08-21 | 2017-01-10 | Sandisk Technologies Llc | Three dimensional memory device with epitaxial semiconductor pedestal for peripheral transistors |
US11956952B2 (en) | 2015-08-23 | 2024-04-09 | Monolithic 3D Inc. | Semiconductor memory device and structure |
US9853043B2 (en) | 2015-08-25 | 2017-12-26 | Sandisk Technologies Llc | Method of making a multilevel memory stack structure using a cavity containing a sacrificial fill material |
US9780143B2 (en) * | 2015-08-25 | 2017-10-03 | Western Digital Technologies, Inc. | Implementing magnetic memory integration with CMOS driving circuits |
US9502471B1 (en) | 2015-08-25 | 2016-11-22 | Sandisk Technologies Llc | Multi tier three-dimensional memory devices including vertically shared bit lines |
US9953941B2 (en) | 2015-08-25 | 2018-04-24 | Invensas Bonding Technologies, Inc. | Conductive barrier direct hybrid bonding |
US10096654B2 (en) | 2015-09-11 | 2018-10-09 | Sandisk Technologies Llc | Three-dimensional resistive random access memory containing self-aligned memory elements |
US9646975B2 (en) | 2015-09-21 | 2017-05-09 | Sandisk Technologies Llc | Lateral stack of cobalt and a cobalt-semiconductor alloy for control gate electrodes in a memory structure |
WO2017053329A1 (en) | 2015-09-21 | 2017-03-30 | Monolithic 3D Inc | 3d semiconductor device and structure |
US11978731B2 (en) | 2015-09-21 | 2024-05-07 | Monolithic 3D Inc. | Method to produce a multi-level semiconductor memory device and structure |
US9576966B1 (en) | 2015-09-21 | 2017-02-21 | Sandisk Technologies Llc | Cobalt-containing conductive layers for control gate electrodes in a memory structure |
US9806089B2 (en) | 2015-09-21 | 2017-10-31 | Sandisk Technologies Llc | Method of making self-assembling floating gate electrodes for a three-dimensional memory device |
US9911748B2 (en) | 2015-09-28 | 2018-03-06 | Sandisk Technologies Llc | Epitaxial source region for uniform threshold voltage of vertical transistors in 3D memory devices |
US9842651B2 (en) | 2015-11-25 | 2017-12-12 | Sunrise Memory Corporation | Three-dimensional vertical NOR flash thin film transistor strings |
US11120884B2 (en) | 2015-09-30 | 2021-09-14 | Sunrise Memory Corporation | Implementing logic function and generating analog signals using NOR memory strings |
US9892800B2 (en) | 2015-09-30 | 2018-02-13 | Sunrise Memory Corporation | Multi-gate NOR flash thin-film transistor strings arranged in stacked horizontal active strips with vertical control gates |
US10121553B2 (en) | 2015-09-30 | 2018-11-06 | Sunrise Memory Corporation | Capacitive-coupled non-volatile thin-film transistor NOR strings in three-dimensional arrays |
US10522225B1 (en) | 2015-10-02 | 2019-12-31 | Monolithic 3D Inc. | Semiconductor device with non-volatile memory |
US9570463B1 (en) | 2015-10-15 | 2017-02-14 | Sandisk Technologies Llc | Multilevel memory stack structure with joint electrode having a collar portion and methods for manufacturing the same |
US9876025B2 (en) | 2015-10-19 | 2018-01-23 | Sandisk Technologies Llc | Methods for manufacturing ultrathin semiconductor channel three-dimensional memory devices |
US9780108B2 (en) | 2015-10-19 | 2017-10-03 | Sandisk Technologies Llc | Ultrathin semiconductor channel three-dimensional memory devices |
US11114464B2 (en) | 2015-10-24 | 2021-09-07 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10418369B2 (en) | 2015-10-24 | 2019-09-17 | Monolithic 3D Inc. | Multi-level semiconductor memory device and structure |
US10847540B2 (en) | 2015-10-24 | 2020-11-24 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
US11296115B1 (en) | 2015-10-24 | 2022-04-05 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US9478495B1 (en) | 2015-10-26 | 2016-10-25 | Sandisk Technologies Llc | Three dimensional memory device containing aluminum source contact via structure and method of making thereof |
US9704920B2 (en) | 2015-10-27 | 2017-07-11 | Sandisk Technologies Llc | Resistive random access memory containing a steering element and a tunneling dielectric element |
US9659955B1 (en) | 2015-10-28 | 2017-05-23 | Sandisk Technologies Llc | Crystalinity-dependent aluminum oxide etching for self-aligned blocking dielectric in a memory structure |
US9620512B1 (en) | 2015-10-28 | 2017-04-11 | Sandisk Technologies Llc | Field effect transistor with a multilevel gate electrode for integration with a multilevel memory device |
US9793139B2 (en) | 2015-10-29 | 2017-10-17 | Sandisk Technologies Llc | Robust nucleation layers for enhanced fluorine protection and stress reduction in 3D NAND word lines |
US9754958B2 (en) | 2015-10-30 | 2017-09-05 | Sandisk Technologies Llc | Three-dimensional memory devices having a shaped epitaxial channel portion and method of making thereof |
US9842851B2 (en) | 2015-10-30 | 2017-12-12 | Sandisk Technologies Llc | Three-dimensional memory devices having a shaped epitaxial channel portion |
US9899399B2 (en) | 2015-10-30 | 2018-02-20 | Sandisk Technologies Llc | 3D NAND device with five-folded memory stack structure configuration |
US11114427B2 (en) | 2015-11-07 | 2021-09-07 | Monolithic 3D Inc. | 3D semiconductor processor and memory device and structure |
US11937422B2 (en) | 2015-11-07 | 2024-03-19 | Monolithic 3D Inc. | Semiconductor memory device and structure |
US9812505B2 (en) | 2015-11-16 | 2017-11-07 | Sandisk Technologies Llc | Non-volatile memory device containing oxygen-scavenging material portions and method of making thereof |
US9831266B2 (en) | 2015-11-20 | 2017-11-28 | Sandisk Technologies Llc | Three-dimensional NAND device containing support pedestal structures for a buried source line and method of making the same |
US9799670B2 (en) | 2015-11-20 | 2017-10-24 | Sandisk Technologies Llc | Three dimensional NAND device containing dielectric pillars for a buried source line and method of making thereof |
US9837431B2 (en) | 2015-11-20 | 2017-12-05 | Sandisk Technologies Llc | 3D semicircular vertical NAND string with recessed inactive semiconductor channel sections |
US9917100B2 (en) | 2015-11-20 | 2018-03-13 | Sandisk Technologies Llc | Three-dimensional NAND device containing support pedestal structures for a buried source line and method of making the same |
US9935123B2 (en) | 2015-11-25 | 2018-04-03 | Sandisk Technologies Llc | Within array replacement openings for a three-dimensional memory device |
US10038006B2 (en) | 2015-12-22 | 2018-07-31 | Sandisk Technologies Llc | Through-memory-level via structures for a three-dimensional memory device |
US9530790B1 (en) | 2015-12-24 | 2016-12-27 | Sandisk Technologies Llc | Three-dimensional memory device containing CMOS devices over memory stack structures |
US9659956B1 (en) | 2016-01-06 | 2017-05-23 | Sandisk Technologies Llc | Three-dimensional memory device containing source select gate electrodes with enhanced electrical isolation |
US9754665B2 (en) | 2016-01-29 | 2017-09-05 | Sandisk Technologies Llc | Vacancy-modulated conductive oxide resistive RAM device including an interfacial oxygen source layer |
US9754820B2 (en) | 2016-02-01 | 2017-09-05 | Sandisk Technologies Llc | Three-dimensional memory device containing an aluminum oxide etch stop layer for backside contact structure and method of making thereof |
US9589839B1 (en) | 2016-02-01 | 2017-03-07 | Sandisk Technologies Llc | Method of reducing control gate electrode curvature in three-dimensional memory devices |
US9728551B1 (en) | 2016-02-04 | 2017-08-08 | Sandisk Technologies Llc | Multi-tier replacement memory stack structure integration scheme |
US9673213B1 (en) | 2016-02-15 | 2017-06-06 | Sandisk Technologies Llc | Three dimensional memory device with peripheral devices under dummy dielectric layer stack and method of making thereof |
US9859363B2 (en) * | 2016-02-16 | 2018-01-02 | Sandisk Technologies Llc | Self-aligned isolation dielectric structures for a three-dimensional memory device |
US10269620B2 (en) | 2016-02-16 | 2019-04-23 | Sandisk Technologies Llc | Multi-tier memory device with through-stack peripheral contact via structures and method of making thereof |
US9991280B2 (en) | 2016-02-17 | 2018-06-05 | Sandisk Technologies Llc | Multi-tier three-dimensional memory devices containing annular dielectric spacers within memory openings and methods of making the same |
US9721663B1 (en) | 2016-02-18 | 2017-08-01 | Sandisk Technologies Llc | Word line decoder circuitry under a three-dimensional memory array |
US9595535B1 (en) | 2016-02-18 | 2017-03-14 | Sandisk Technologies Llc | Integration of word line switches with word line contact via structures |
US10115732B2 (en) | 2016-02-22 | 2018-10-30 | Sandisk Technologies Llc | Three dimensional memory device containing discrete silicon nitride charge storage regions |
US9679907B1 (en) | 2016-02-29 | 2017-06-13 | Sandisk Technologies Llc | Three-dimensional memory device with charge-trapping-free gate dielectric for top select gate electrode and method of making thereof |
CN111446246B (zh) * | 2016-03-07 | 2023-04-07 | 杭州海存信息技术有限公司 | 兼具数据分析功能的存储器 |
US10242994B2 (en) | 2016-03-16 | 2019-03-26 | Sandisk Technologies Llc | Three-dimensional memory device containing annular etch-stop spacer and method of making thereof |
US9768192B1 (en) | 2016-03-16 | 2017-09-19 | Sandisk Technologies Llc | Three-dimensional memory device containing annular etch-stop spacer and method of making thereof |
US9780034B1 (en) | 2016-03-16 | 2017-10-03 | Sandisk Technologies Llc | Three-dimensional memory device containing annular etch-stop spacer and method of making thereof |
US10224104B2 (en) | 2016-03-23 | 2019-03-05 | Sandisk Technologies Llc | Three dimensional NAND memory device with common bit line for multiple NAND strings in each memory block |
US10355015B2 (en) | 2016-03-23 | 2019-07-16 | Sandisk Technologies Llc | Three-dimensional NAND memory device with common bit line for multiple NAND strings in each memory block |
US9711530B1 (en) | 2016-03-25 | 2017-07-18 | Sandisk Technologies Llc | Locally-trap-characteristic-enhanced charge trap layer for three-dimensional memory structures |
US9812463B2 (en) | 2016-03-25 | 2017-11-07 | Sandisk Technologies Llc | Three-dimensional memory device containing vertically isolated charge storage regions and method of making thereof |
US9786681B1 (en) | 2016-04-01 | 2017-10-10 | Sandisk Technologies Llc | Multilevel memory stack structure employing stacks of a support pedestal structure and a support pillar structure |
CN105742277B (zh) * | 2016-04-13 | 2018-06-22 | 中国航天科技集团公司第九研究院第七七一研究所 | 一种大容量立体集成sram存储器三维扩展方法 |
US9953697B2 (en) | 2016-04-25 | 2018-04-24 | Sandisk Technologies Llc | Volatile memory device employing a resistive memory element |
US10084015B2 (en) | 2016-04-28 | 2018-09-25 | Sandisk Technologies Llc | Resistive memory element employing electron density modulation and structural relaxation |
US9881956B2 (en) * | 2016-05-06 | 2018-01-30 | International Business Machines Corporation | Heterogeneous integration using wafer-to-wafer stacking with die size adjustment |
US9728547B1 (en) | 2016-05-19 | 2017-08-08 | Sandisk Technologies Llc | Three-dimensional memory device with aluminum-containing etch stop layer for backside contact structure and method of making thereof |
US10256248B2 (en) | 2016-06-07 | 2019-04-09 | Sandisk Technologies Llc | Through-memory-level via structures between staircase regions in a three-dimensional memory device and method of making thereof |
US10249640B2 (en) | 2016-06-08 | 2019-04-02 | Sandisk Technologies Llc | Within-array through-memory-level via structures and method of making thereof |
US9985046B2 (en) | 2016-06-13 | 2018-05-29 | Sandisk Technologies Llc | Method of forming a staircase in a semiconductor device using a linear alignment control feature |
US10121794B2 (en) | 2016-06-20 | 2018-11-06 | Sandisk Technologies Llc | Three-dimensional memory device having epitaxial germanium-containing vertical channel and method of making thereof |
US10103161B2 (en) | 2016-06-28 | 2018-10-16 | Sandisk Technologies Llc | Offset backside contact via structures for a three-dimensional memory device |
US10361213B2 (en) | 2016-06-28 | 2019-07-23 | Sandisk Technologies Llc | Three dimensional memory device containing multilayer wordline barrier films and method of making thereof |
US9917093B2 (en) | 2016-06-28 | 2018-03-13 | Sandisk Technologies Llc | Inter-plane offset in backside contact via structures for a three-dimensional memory device |
US10355139B2 (en) | 2016-06-28 | 2019-07-16 | Sandisk Technologies Llc | Three-dimensional memory device with amorphous barrier layer and method of making thereof |
EP3420590B1 (en) | 2016-06-28 | 2020-01-29 | SanDisk Technologies LLC | Offset backside contact via structures for a three-dimensional memory device |
US9978768B2 (en) | 2016-06-29 | 2018-05-22 | Sandisk Technologies Llc | Method of making three-dimensional semiconductor memory device having laterally undulating memory films |
US9576967B1 (en) | 2016-06-30 | 2017-02-21 | Sandisk Technologies Llc | Method of suppressing epitaxial growth in support openings and three-dimensional memory device containing non-epitaxial support pillars in the support openings |
US9659866B1 (en) | 2016-07-08 | 2017-05-23 | Sandisk Technologies Llc | Three-dimensional memory structures with low source line resistance |
US9613689B1 (en) | 2016-07-08 | 2017-04-04 | Sandisk Technologies Llc | Self-selecting local bit line for a three-dimensional memory array |
US10381372B2 (en) | 2016-07-13 | 2019-08-13 | Sandisk Technologies Llc | Selective tungsten growth for word lines of a three-dimensional memory device |
US10529620B2 (en) | 2016-07-13 | 2020-01-07 | Sandisk Technologies Llc | Three-dimensional memory device containing word lines formed by selective tungsten growth on nucleation controlling surfaces and methods of manufacturing the same |
US9748266B1 (en) | 2016-07-20 | 2017-08-29 | Sandisk Technologies Llc | Three-dimensional memory device with select transistor having charge trapping gate dielectric layer and methods of making and operating thereof |
US9748174B1 (en) | 2016-07-20 | 2017-08-29 | Sandisk Technologies Llc | Three-dimensional memory device having multi-layer diffusion barrier stack and method of making thereof |
US9716105B1 (en) | 2016-08-02 | 2017-07-25 | Sandisk Technologies Llc | Three-dimensional memory device with different thickness insulating layers and method of making thereof |
US9824966B1 (en) | 2016-08-12 | 2017-11-21 | Sandisk Technologies Llc | Three-dimensional memory device containing a lateral source contact and method of making the same |
US9754963B1 (en) | 2016-08-22 | 2017-09-05 | Sandisk Technologies Llc | Multi-tier memory stack structure containing two types of support pillar structures |
US9805805B1 (en) | 2016-08-23 | 2017-10-31 | Sandisk Technologies Llc | Three-dimensional memory device with charge carrier injection wells for vertical channels and method of making and using thereof |
US9905573B1 (en) | 2016-08-30 | 2018-02-27 | Sandisk Technologies Llc | Three-dimensional memory device with angled word lines and method of making thereof |
KR102369776B1 (ko) | 2016-08-31 | 2022-03-03 | 마이크론 테크놀로지, 인크. | 강유전 메모리 셀 |
KR102188490B1 (ko) | 2016-08-31 | 2020-12-09 | 마이크론 테크놀로지, 인크. | 강유전체 메모리를 포함하며 강유전체 메모리에 액세스하기 위한 장치 및 방법 |
KR102314663B1 (ko) * | 2016-08-31 | 2021-10-21 | 마이크론 테크놀로지, 인크. | 2 트랜지스터-1 커패시터 메모리를 포함하고 이를 액세스하기 위한 장치 및 방법 |
CN109643570B (zh) | 2016-08-31 | 2023-11-21 | 美光科技公司 | 包括铁电存储器且用于操作铁电存储器的装置及方法 |
US10050054B2 (en) | 2016-10-05 | 2018-08-14 | Sandisk Technologies Llc | Three-dimensional memory device having drain select level isolation structure and method of making thereof |
US11711928B2 (en) | 2016-10-10 | 2023-07-25 | Monolithic 3D Inc. | 3D memory devices and structures with control circuits |
US11812620B2 (en) | 2016-10-10 | 2023-11-07 | Monolithic 3D Inc. | 3D DRAM memory devices and structures with control circuits |
US11329059B1 (en) | 2016-10-10 | 2022-05-10 | Monolithic 3D Inc. | 3D memory devices and structures with thinned single crystal substrates |
US11930648B1 (en) | 2016-10-10 | 2024-03-12 | Monolithic 3D Inc. | 3D memory devices and structures with metal layers |
US11251149B2 (en) | 2016-10-10 | 2022-02-15 | Monolithic 3D Inc. | 3D memory device and structure |
US11869591B2 (en) | 2016-10-10 | 2024-01-09 | Monolithic 3D Inc. | 3D memory devices and structures with control circuits |
US9818801B1 (en) | 2016-10-14 | 2017-11-14 | Sandisk Technologies Llc | Resistive three-dimensional memory device with heterostructure semiconductor local bit line and method of making thereof |
US10014316B2 (en) | 2016-10-18 | 2018-07-03 | Sandisk Technologies Llc | Three-dimensional memory device with leakage reducing support pillar structures and method of making thereof |
US9806256B1 (en) | 2016-10-21 | 2017-10-31 | Sandisk Technologies Llc | Resistive memory device having sidewall spacer electrode and method of making thereof |
US9881929B1 (en) | 2016-10-27 | 2018-01-30 | Sandisk Technologies Llc | Multi-tier memory stack structure containing non-overlapping support pillar structures and method of making thereof |
US9929174B1 (en) | 2016-10-28 | 2018-03-27 | Sandisk Technologies Llc | Three-dimensional memory device having non-uniform spacing among memory stack structures and method of making thereof |
US10008570B2 (en) | 2016-11-03 | 2018-06-26 | Sandisk Technologies Llc | Bulb-shaped memory stack structures for direct source contact in three-dimensional memory device |
US9978766B1 (en) | 2016-11-09 | 2018-05-22 | Sandisk Technologies Llc | Three-dimensional memory device with electrically isolated support pillar structures and method of making thereof |
US9972641B1 (en) * | 2016-11-17 | 2018-05-15 | Sandisk Technologies Llc | Three-dimensional memory device having a multilevel drain select gate electrode and method of making thereof |
US9972640B1 (en) | 2016-11-17 | 2018-05-15 | Sandisk Technologies Llc | Three-dimensional memory device with self-aligned drain side select gate electrodes and method of making thereof |
US10083982B2 (en) * | 2016-11-17 | 2018-09-25 | Sandisk Technologies Llc | Three-dimensional memory device having select gate electrode that is thicker than word lines and method of making thereof |
US9991277B1 (en) | 2016-11-28 | 2018-06-05 | Sandisk Technologies Llc | Three-dimensional memory device with discrete self-aligned charge storage elements and method of making thereof |
US10262945B2 (en) | 2016-11-28 | 2019-04-16 | Sandisk Technologies Llc | Three-dimensional array device having a metal containing barrier and method of making thereof |
US9876031B1 (en) | 2016-11-30 | 2018-01-23 | Sandisk Technologies Llc | Three-dimensional memory device having passive devices at a buried source line level and method of making thereof |
US10290803B2 (en) | 2016-12-02 | 2019-05-14 | Sandisk Technologies Llc | Three-dimensional devices with wedge-shaped contact region and method of making thereof |
US10853244B2 (en) | 2016-12-07 | 2020-12-01 | Sandisk Technologies Llc | Randomly writable memory device and method of operating thereof |
US10056399B2 (en) | 2016-12-22 | 2018-08-21 | Sandisk Technologies Llc | Three-dimensional memory devices containing inter-tier dummy memory cells and methods of making the same |
US10032908B1 (en) | 2017-01-06 | 2018-07-24 | Sandisk Technologies Llc | Multi-gate vertical field effect transistor with channel strips laterally confined by gate dielectric layers, and method of making thereof |
US10074666B2 (en) | 2017-01-09 | 2018-09-11 | Sandisk Technologies Llc | Three-dimensional memory device with enhanced mechanical stability semiconductor pedestal and method of making thereof |
US9853038B1 (en) | 2017-01-20 | 2017-12-26 | Sandisk Technologies Llc | Three-dimensional memory device having integrated support and contact structures and method of making thereof |
JP2018117102A (ja) * | 2017-01-20 | 2018-07-26 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置 |
US9911790B1 (en) | 2017-01-20 | 2018-03-06 | Sandisk Technologies Llc | Resistive RAM including air gaps between word lines and between vertical bit lines |
US9875929B1 (en) | 2017-01-23 | 2018-01-23 | Sandisk Technologies Llc | Three-dimensional memory device with annular blocking dielectrics and discrete charge storage elements and method of making thereof |
US10115735B2 (en) | 2017-02-24 | 2018-10-30 | Sandisk Technologies Llc | Semiconductor device containing multilayer titanium nitride diffusion barrier and method of making thereof |
US10192877B2 (en) | 2017-03-07 | 2019-01-29 | Sandisk Technologies Llc | Three-dimensional memory device with level-shifted staircase structures and method of making thereof |
US10256245B2 (en) | 2017-03-10 | 2019-04-09 | Sandisk Technologies Llc | Three-dimensional memory device with short-free source select gate contact via structure and method of making the same |
US10032489B1 (en) | 2017-03-15 | 2018-07-24 | Sandisk Technologies Llc | Sensing amplifier to detect the memory cell current transition |
US10192929B2 (en) | 2017-03-24 | 2019-01-29 | Sandisk Technologies Llc | Three-dimensional memory devices having through-stack contact via structures and method of making thereof |
US9922987B1 (en) | 2017-03-24 | 2018-03-20 | Sandisk Technologies Llc | Three-dimensional memory device containing separately formed drain select transistors and method of making thereof |
US9960180B1 (en) | 2017-03-27 | 2018-05-01 | Sandisk Technologies Llc | Three-dimensional memory device with partially discrete charge storage regions and method of making thereof |
US10050194B1 (en) | 2017-04-04 | 2018-08-14 | Sandisk Technologies Llc | Resistive memory device including a lateral air gap around a memory element and method of making thereof |
US10115632B1 (en) | 2017-04-17 | 2018-10-30 | Sandisk Technologies Llc | Three-dimensional memory device having conductive support structures and method of making thereof |
US9960181B1 (en) | 2017-04-17 | 2018-05-01 | Sandisk Technologies Llc | Three-dimensional memory device having contact via structures in overlapped terrace region and method of making thereof |
EP3859780A1 (en) * | 2017-05-08 | 2021-08-04 | Micron Technology, Inc. | Memory arrays |
CN110574160B (zh) * | 2017-05-08 | 2023-05-19 | 美光科技公司 | 存储器阵列 |
US20180331117A1 (en) | 2017-05-12 | 2018-11-15 | Sandisk Technologies Llc | Multilevel memory stack structure with tapered inter-tier joint region and methods of making thereof |
US20180331118A1 (en) | 2017-05-12 | 2018-11-15 | Sandisk Technologies Llc | Multi-layer barrier for cmos under array type memory device and method of making thereof |
US9941299B1 (en) | 2017-05-24 | 2018-04-10 | Sandisk Technologies Llc | Three-dimensional ferroelectric memory device and method of making thereof |
US10224372B2 (en) | 2017-05-24 | 2019-03-05 | Sandisk Technologies Llc | Three-dimensional memory device with vertical bit lines and replacement word lines and method of making thereof |
US10319635B2 (en) | 2017-05-25 | 2019-06-11 | Sandisk Technologies Llc | Interconnect structure containing a metal slilicide hydrogen diffusion barrier and method of making thereof |
US10141331B1 (en) | 2017-05-29 | 2018-11-27 | Sandisk Technologies Llc | Three-dimensional memory device containing support pillars underneath a retro-stepped dielectric material and method of making thereof |
US9953992B1 (en) | 2017-06-01 | 2018-04-24 | Sandisk Technologies Llc | Mid-plane word line switch connection for CMOS under three-dimensional memory device and method of making thereof |
US10340449B2 (en) | 2017-06-01 | 2019-07-02 | Sandisk Technologies Llc | Resistive memory device containing carbon barrier and method of making thereof |
US10283566B2 (en) | 2017-06-01 | 2019-05-07 | Sandisk Technologies Llc | Three-dimensional memory device with through-stack contact via structures and method of making thereof |
US10381373B2 (en) | 2017-06-16 | 2019-08-13 | Sandisk Technologies Llc | Three-dimensional memory device having a buried source line extending to scribe line and method of making thereof |
US10115730B1 (en) | 2017-06-19 | 2018-10-30 | Sandisk Technologies Llc | Three-dimensional memory device containing structurally reinforced pedestal channel portions and method of making thereof |
US10224340B2 (en) | 2017-06-19 | 2019-03-05 | Sandisk Technologies Llc | Three-dimensional memory device having discrete direct source strap contacts and method of making thereof |
JP7203054B2 (ja) | 2017-06-20 | 2023-01-12 | サンライズ メモリー コーポレイション | 3次元nor型メモリアレイアーキテクチャ及びその製造方法 |
US11180861B2 (en) | 2017-06-20 | 2021-11-23 | Sunrise Memory Corporation | 3-dimensional NOR string arrays in segmented stacks |
US10381364B2 (en) | 2017-06-20 | 2019-08-13 | Sandisk Technologies Llc | Three-dimensional memory device including vertically offset drain select level layers and method of making thereof |
US10692874B2 (en) | 2017-06-20 | 2020-06-23 | Sunrise Memory Corporation | 3-dimensional NOR string arrays in segmented stacks |
US10608008B2 (en) | 2017-06-20 | 2020-03-31 | Sunrise Memory Corporation | 3-dimensional nor strings with segmented shared source regions |
US10355012B2 (en) | 2017-06-26 | 2019-07-16 | Sandisk Technologies Llc | Multi-tier three-dimensional memory device with stress compensation structures and method of making thereof |
US10256272B2 (en) | 2017-06-26 | 2019-04-09 | Sandisk Technologies Llc | Resistive memory device containing etch stop structures for vertical bit line formation and method of making thereof |
US10438964B2 (en) | 2017-06-26 | 2019-10-08 | Sandisk Technologies Llc | Three-dimensional memory device having direct source contact and metal oxide blocking dielectric and method of making thereof |
US10079267B1 (en) | 2017-06-26 | 2018-09-18 | Sandisk Technologies Llc | Memory device containing wrap gate vertical select transistors and method of making thereof |
US10224240B1 (en) | 2017-06-27 | 2019-03-05 | Sandisk Technologies Llc | Distortion reduction of memory openings in a multi-tier memory device through thermal cycle control |
US10354728B2 (en) | 2017-06-28 | 2019-07-16 | Sandisk Technologies Llc | Write verification and resistive state determination based on cell turn-on characteristics for resistive random access memory |
US10224373B2 (en) | 2017-06-28 | 2019-03-05 | Sandisk Technologies Llc | Three-dimensional ReRAM memory device employing replacement word lines and methods of making the same |
US10290645B2 (en) | 2017-06-30 | 2019-05-14 | Sandisk Technologies Llc | Three-dimensional memory device containing hydrogen diffusion barrier layer for CMOS under array architecture and method of making thereof |
US10867675B2 (en) | 2017-07-13 | 2020-12-15 | Micron Technology, Inc. | Apparatuses and methods for memory including ferroelectric memory cells and dielectric memory cells |
US11552094B2 (en) | 2017-07-18 | 2023-01-10 | Sandisk Technologies Llc | Three-dimensional memory device having on-pitch drain select gate electrodes and method of making the same |
US11037943B2 (en) | 2017-07-18 | 2021-06-15 | Sandisk Technologies Llc | Three-dimensional memory device having on-pitch drain select gate electrodes and method of making the same |
US10297610B2 (en) | 2017-07-18 | 2019-05-21 | Sandisk Technologies Llc | Three-dimensional memory device having on-pitch drain select gate electrodes and method of making the same |
WO2019018050A1 (en) | 2017-07-18 | 2019-01-24 | Sandisk Technologies Llc | THREE-DIMENSIONAL MEMORY DEVICE WITH SELF-ALIGNED DRAIN SELECTION GRID ELECTRODES AND METHOD FOR MANUFACTURING THE SAME |
US10236300B2 (en) | 2017-07-25 | 2019-03-19 | Sandisk Technologies Llc | On-pitch drain select level isolation structure for three-dimensional memory device and method of making the same |
US11043499B2 (en) | 2017-07-27 | 2021-06-22 | Micron Technology, Inc. | Memory arrays comprising memory cells |
US10199359B1 (en) | 2017-08-04 | 2019-02-05 | Sandisk Technologies Llc | Three-dimensional memory device employing direct source contact and hole current detection and method of making the same |
US20190051703A1 (en) | 2017-08-09 | 2019-02-14 | Sandisk Technologies Llc | Two-dimensional array of surround gate vertical field effect transistors and method of making thereof |
US10103169B1 (en) | 2017-08-21 | 2018-10-16 | Sandisk Technologies Llc | Method of making a three-dimensional memory device using a multi-step hot phosphoric acid wet etch process |
US10381229B2 (en) | 2017-08-24 | 2019-08-13 | Sandisk Technologies Llc | Three-dimensional memory device with straddling drain select electrode lines and method of making thereof |
US10283710B2 (en) * | 2017-09-05 | 2019-05-07 | Sandisk Technologies Llc | Resistive random access memory device containing replacement word lines and method of making thereof |
WO2019055073A1 (en) | 2017-09-14 | 2019-03-21 | Sandisk Technologies Llc | THREE-DIMENSIONAL MEMORY DEVICE CONTAINING ANNULAR ENGRAVING STOP SPACER AND METHOD FOR MANUFACTURING THE SAME |
US10192878B1 (en) | 2017-09-14 | 2019-01-29 | Sandisk Technologies Llc | Three-dimensional memory device with self-aligned multi-level drain select gate electrodes |
US10290681B2 (en) | 2017-09-21 | 2019-05-14 | Sandisk Technologies Llc | Array of hole-type surround gate vertical field effect transistors and method of making thereof |
US10840205B2 (en) | 2017-09-24 | 2020-11-17 | Invensas Bonding Technologies, Inc. | Chemical mechanical polishing for hybrid bonding |
US10256402B1 (en) | 2017-09-25 | 2019-04-09 | Sandisk Technologies Llc | ReRAM read state verification based on cell turn-on characteristics |
US10290647B2 (en) | 2017-09-26 | 2019-05-14 | Sandisk Technologies Llc | Three-dimensional memory device containing structurally reinforced pedestal channel portions and method of making the same |
US10115895B1 (en) | 2017-09-26 | 2018-10-30 | Sandisk Technologies Llc | Vertical field effect transisitors having a rectangular surround gate and method of making the same |
US10453798B2 (en) | 2017-09-27 | 2019-10-22 | Sandisk Technologies Llc | Three-dimensional memory device with gated contact via structures and method of making thereof |
US10707314B2 (en) | 2017-09-29 | 2020-07-07 | Sandisk Technologies Llc | Surround gate vertical field effect transistors including tubular and strip electrodes and method of making the same |
US10115459B1 (en) | 2017-09-29 | 2018-10-30 | Sandisk Technologies Llc | Multiple liner interconnects for three dimensional memory devices and method of making thereof |
US10199326B1 (en) | 2017-10-05 | 2019-02-05 | Sandisk Technologies Llc | Three-dimensional memory device with driver circuitry on the backside of a substrate and method of making thereof |
US10083877B1 (en) | 2017-10-25 | 2018-09-25 | Sandisk Technologies Llc | Vertical field effect transistors including two-tier select gates and method of making the same |
US10283513B1 (en) | 2017-11-06 | 2019-05-07 | Sandisk Technologies Llc | Three-dimensional memory device with annular blocking dielectrics and method of making thereof |
US10629606B2 (en) | 2017-11-07 | 2020-04-21 | Sandisk Technologies Llc | Three-dimensional memory device having level-shifted staircases and method of making thereof |
US10461163B2 (en) | 2017-11-15 | 2019-10-29 | Sandisk Technologies Llc | Three-dimensional memory device with thickened word lines in terrace region and method of making thereof |
WO2019099103A1 (en) | 2017-11-15 | 2019-05-23 | Sandisk Technologies Llc | Three-dimensional memory device with thickened word lines in terrace region and method of making thereof |
US10453854B2 (en) | 2017-11-15 | 2019-10-22 | Sandisk Technologies Llc | Three-dimensional memory device with thickened word lines in terrace region |
US10217746B1 (en) | 2017-11-30 | 2019-02-26 | Sandisk Technologies Llc | Three-dimensional memory device having L-shaped word lines and a support structure and methods of making the same |
US10181442B1 (en) | 2017-11-30 | 2019-01-15 | Sandisk Technologies Llc | Three-dimensional memory device having L-shaped word lines and methods of making the same |
US10211215B1 (en) | 2017-11-30 | 2019-02-19 | Sandisk Technologies Llc | Three-dimensional memory device containing word lines having vertical protrusion regions and methods of making the same |
US10229931B1 (en) | 2017-12-05 | 2019-03-12 | Sandisk Technologies Llc | Three-dimensional memory device containing fluorine-free tungsten—word lines and methods of manufacturing the same |
US10297312B1 (en) | 2017-12-06 | 2019-05-21 | Sandisk Technologies Llc | Resistive memory cell programmed by metal alloy formation and method of operating thereof |
US10290648B1 (en) | 2017-12-07 | 2019-05-14 | Sandisk Technologies Llc | Three-dimensional memory device containing air gap rails and method of making thereof |
US10916556B1 (en) | 2017-12-12 | 2021-02-09 | Sandisk Technologies Llc | Three-dimensional memory device using a buried source line with a thin semiconductor oxide tunneling layer |
US10256252B1 (en) | 2017-12-13 | 2019-04-09 | Sandisk Technologies Llc | Three-dimensional memory device containing structurally reinforced pedestal channel portions and methods of making the same |
US10347647B1 (en) | 2017-12-21 | 2019-07-09 | Sandisk Technologies Llc | Three-dimensional memory device containing multi-threshold-voltage drain select gates and method of making the same |
US10354956B1 (en) | 2018-01-05 | 2019-07-16 | Sandisk Technologies Llc | Three-dimensional memory device containing hydrogen diffusion barrier structures for CMOS under array architecture and method of making the same |
US10373969B2 (en) | 2018-01-09 | 2019-08-06 | Sandisk Technologies Llc | Three-dimensional memory device including partially surrounding select gates and fringe field assisted programming thereof |
US10559588B2 (en) | 2018-01-12 | 2020-02-11 | Sandisk Technologies Llc | Three-dimensional flat inverse NAND memory device and method of making the same |
US10510738B2 (en) | 2018-01-17 | 2019-12-17 | Sandisk Technologies Llc | Three-dimensional memory device having support-die-assisted source power distribution and method of making thereof |
US10283493B1 (en) | 2018-01-17 | 2019-05-07 | Sandisk Technologies Llc | Three-dimensional memory device containing bonded memory die and peripheral logic die and method of making thereof |
US10546870B2 (en) | 2018-01-18 | 2020-01-28 | Sandisk Technologies Llc | Three-dimensional memory device containing offset column stairs and method of making the same |
US10622369B2 (en) | 2018-01-22 | 2020-04-14 | Sandisk Technologies Llc | Three-dimensional memory device including contact via structures that extend through word lines and method of making the same |
US10290643B1 (en) | 2018-01-22 | 2019-05-14 | Sandisk Technologies Llc | Three-dimensional memory device containing floating gate select transistor |
US10475812B2 (en) | 2018-02-02 | 2019-11-12 | Sunrise Memory Corporation | Three-dimensional vertical NOR flash thin-film transistor strings |
US10290650B1 (en) | 2018-02-05 | 2019-05-14 | Sandisk Technologies Llc | Self-aligned tubular electrode portions inside memory openings for drain select gate electrodes in a three-dimensional memory device |
US10720445B1 (en) | 2018-02-08 | 2020-07-21 | Sandisk Technologies Llc | Three-dimensional memory device having nitrided direct source strap contacts and method of making thereof |
US10256247B1 (en) | 2018-02-08 | 2019-04-09 | Sandisk Technologies Llc | Three-dimensional memory device with silicided word lines, air gap layers and discrete charge storage elements, and method of making thereof |
US10700028B2 (en) | 2018-02-09 | 2020-06-30 | Sandisk Technologies Llc | Vertical chip interposer and method of making a chip assembly containing the vertical chip interposer |
US10903232B2 (en) | 2018-02-14 | 2021-01-26 | Sandisk Technologies Llc | Three-dimensional memory devices containing memory stack structures with laterally separated charge storage elements and method of making thereof |
US10304852B1 (en) | 2018-02-15 | 2019-05-28 | Sandisk Technologies Llc | Three-dimensional memory device containing through-memory-level contact via structures |
US10903230B2 (en) | 2018-02-15 | 2021-01-26 | Sandisk Technologies Llc | Three-dimensional memory device containing through-memory-level contact via structures and method of making the same |
US10727248B2 (en) | 2018-02-15 | 2020-07-28 | Sandisk Technologies Llc | Three-dimensional memory device containing through-memory-level contact via structures |
US10971507B2 (en) | 2018-02-15 | 2021-04-06 | Sandisk Technologies Llc | Three-dimensional memory device containing through-memory-level contact via structures |
US10553537B2 (en) | 2018-02-17 | 2020-02-04 | Sandisk Technologies Llc | Interconnects containing serpentine line structures for three-dimensional memory devices and methods of making the same |
US10192784B1 (en) | 2018-02-22 | 2019-01-29 | Sandisk Technologies Llc | Three-dimensional memory device containing self-aligned contact via structures and methods of manufacturing the same |
US10381450B1 (en) | 2018-02-27 | 2019-08-13 | Sandisk Technologies Llc | Three-dimensional memory device with self-aligned drain select level isolation structures and method of making thereof |
US10319680B1 (en) | 2018-03-01 | 2019-06-11 | Sandisk Technologies Llc | Metal contact via structure surrounded by an air gap and method of making thereof |
US10600802B2 (en) | 2018-03-07 | 2020-03-24 | Sandisk Technologies Llc | Multi-tier memory device with rounded top part of joint structure and methods of making the same |
US10209636B1 (en) | 2018-03-07 | 2019-02-19 | Sandisk Technologies Llc | Exposure focus leveling method using region-differentiated focus scan patterns |
US10388666B1 (en) | 2018-03-08 | 2019-08-20 | Sandisk Technologies Llc | Concurrent formation of memory openings and contact openings for a three-dimensional memory device |
US10615123B2 (en) | 2018-03-14 | 2020-04-07 | Sandisk Technologies Llc | Three-dimensional memory device containing compositionally graded word line diffusion barrier layer for and methods of forming the same |
US10354987B1 (en) | 2018-03-22 | 2019-07-16 | Sandisk Technologies Llc | Three-dimensional memory device containing bonded chip assembly with through-substrate via structures and method of making the same |
US10354980B1 (en) | 2018-03-22 | 2019-07-16 | Sandisk Technologies Llc | Three-dimensional memory device containing bonded chip assembly with through-substrate via structures and method of making the same |
US10115681B1 (en) | 2018-03-22 | 2018-10-30 | Sandisk Technologies Llc | Compact three-dimensional memory device having a seal ring and methods of manufacturing the same |
US10355017B1 (en) | 2018-03-23 | 2019-07-16 | Sandisk Technologies Llc | CMOS devices containing asymmetric contact via structures and method of making the same |
US10256167B1 (en) | 2018-03-23 | 2019-04-09 | Sandisk Technologies Llc | Hydrogen diffusion barrier structures for CMOS devices and method of making the same |
US10770459B2 (en) | 2018-03-23 | 2020-09-08 | Sandisk Technologies Llc | CMOS devices containing asymmetric contact via structures |
US10269820B1 (en) | 2018-04-03 | 2019-04-23 | Sandisk Technologies Llc | Three-dimensional memory device containing different pedestal width support pillar structures and method of making the same |
US11056348B2 (en) | 2018-04-05 | 2021-07-06 | Invensas Bonding Technologies, Inc. | Bonding surfaces for microelectronics |
US10468413B2 (en) | 2018-04-06 | 2019-11-05 | Sandisk Technologies Llc | Method for forming hydrogen-passivated semiconductor channels in a three-dimensional memory device |
US10804284B2 (en) | 2018-04-11 | 2020-10-13 | Sandisk Technologies Llc | Three-dimensional memory device containing bidirectional taper staircases and methods of making the same |
US10756186B2 (en) | 2018-04-12 | 2020-08-25 | Sandisk Technologies Llc | Three-dimensional memory device including germanium-containing vertical channels and method of making the same |
US10381322B1 (en) | 2018-04-23 | 2019-08-13 | Sandisk Technologies Llc | Three-dimensional memory device containing self-aligned interlocking bonded structure and method of making the same |
US10566059B2 (en) | 2018-04-30 | 2020-02-18 | Sandisk Technologies Llc | Three dimensional NAND memory device with drain select gate electrode shared between multiple strings |
US10347654B1 (en) | 2018-05-11 | 2019-07-09 | Sandisk Technologies Llc | Three-dimensional memory device employing discrete backside openings and methods of making the same |
US10615172B2 (en) | 2018-05-11 | 2020-04-07 | Sandisk Technologies Llc | Three-dimensional memory device having double-width staircase regions and methods of manufacturing the same |
US10381362B1 (en) | 2018-05-15 | 2019-08-13 | Sandisk Technologies Llc | Three-dimensional memory device including inverted memory stack structures and methods of making the same |
US10515907B2 (en) | 2018-05-17 | 2019-12-24 | Sandisk Technologies Llc | Three-dimensional memory device containing hydrogen diffusion blocking structures and method of making the same |
US10515897B2 (en) | 2018-05-17 | 2019-12-24 | Sandisk Technologies Llc | Three-dimensional memory device containing hydrogen diffusion blocking structures and method of making the same |
US10559582B2 (en) | 2018-06-04 | 2020-02-11 | Sandisk Technologies Llc | Three-dimensional memory device containing source contact to bottom of vertical channels and method of making the same |
US11393779B2 (en) | 2018-06-13 | 2022-07-19 | Invensas Bonding Technologies, Inc. | Large metal pads over TSV |
EP3807927A4 (en) | 2018-06-13 | 2022-02-23 | Invensas Bonding Technologies, Inc. | TSV AS A HIDEPAD |
US10651153B2 (en) | 2018-06-18 | 2020-05-12 | Intel Corporation | Three-dimensional (3D) memory with shared control circuitry using wafer-to-wafer bonding |
US20190043868A1 (en) * | 2018-06-18 | 2019-02-07 | Intel Corporation | Three-dimensional (3d) memory with control circuitry and array in separately processed and bonded wafers |
US10763271B2 (en) | 2018-06-27 | 2020-09-01 | Sandisk Technologies Llc | Three-dimensional memory device containing aluminum-silicon word lines and methods of manufacturing the same |
US10658377B2 (en) | 2018-06-27 | 2020-05-19 | Sandisk Technologies Llc | Three-dimensional memory device with reduced etch damage to memory films and methods of making the same |
US10998331B2 (en) | 2018-06-27 | 2021-05-04 | Sandisk Technologies Llc | Three-dimensional inverse flat NAND memory device containing partially discrete charge storage elements and methods of making the same |
US10600800B2 (en) | 2018-06-27 | 2020-03-24 | Sandisk Technologies Llc | Three-dimensional memory device containing multilevel drain select gate isolation and methods of making the same |
EP3695439A4 (en) | 2018-06-27 | 2021-03-03 | SanDisk Technologies LLC | THREE-DIMENSIONAL STORAGE DEVICE WITH MULTI-LEVEL DRAIN SELECT GATE INSULATION AND METHOD FOR PRODUCING IT |
US11164883B2 (en) | 2018-06-27 | 2021-11-02 | Sandisk Technologies Llc | Three-dimensional memory device containing aluminum-silicon word lines and methods of manufacturing the same |
US10475804B1 (en) | 2018-06-27 | 2019-11-12 | Sandisk Technologies Llc | Three-dimensional memory device containing multilevel drain select gate isolation and methods of making the same |
US10381434B1 (en) | 2018-06-28 | 2019-08-13 | Sandisk Technologies Llc | Support pillar structures for leakage reduction in a three-dimensional memory device |
US10475879B1 (en) | 2018-06-28 | 2019-11-12 | Sandisk Technologies Llc | Support pillar structures for leakage reduction in a three-dimensional memory device and methods of making the same |
US10700086B2 (en) | 2018-06-28 | 2020-06-30 | Sandisk Technologies Llc | Three-dimensional flat NAND memory device having high mobility channels and methods of making the same |
US10854627B1 (en) | 2018-06-29 | 2020-12-01 | Sandisk Technologies Llc | Three-dimensional memory device containing a capped insulating source line core and method of making the same |
CN112567516A (zh) | 2018-07-12 | 2021-03-26 | 日升存储公司 | 三维nor存储器阵列的制造方法 |
US11751391B2 (en) | 2018-07-12 | 2023-09-05 | Sunrise Memory Corporation | Methods for fabricating a 3-dimensional memory structure of nor memory strings |
US10861869B2 (en) | 2018-07-16 | 2020-12-08 | Sandisk Technologies Llc | Three-dimensional memory device having a slimmed aluminum oxide blocking dielectric and method of making same |
US11450669B2 (en) | 2018-07-24 | 2022-09-20 | Intel Corporation | Stacked thin-film transistor based embedded dynamic random-access memory |
US11121149B2 (en) | 2018-08-08 | 2021-09-14 | Sandisk Technologies Llc | Three-dimensional memory device containing direct contact drain-select-level semiconductor channel portions and methods of making the same |
US10840259B2 (en) | 2018-08-13 | 2020-11-17 | Sandisk Technologies Llc | Three-dimensional memory device including liner free molybdenum word lines and methods of making the same |
US10741576B2 (en) | 2018-08-20 | 2020-08-11 | Sandisk Technologies Llc | Three-dimensional memory device containing drain-select-level air gap and methods of making the same |
US10707228B2 (en) | 2018-08-21 | 2020-07-07 | Sandisk Technologies Llc | Three-dimensional memory device having bonding structures connected to bit lines and methods of making the same |
US11011494B2 (en) | 2018-08-31 | 2021-05-18 | Invensas Bonding Technologies, Inc. | Layer structures for making direct metal-to-metal bonds at low temperatures in microelectronics |
CN112740328A (zh) * | 2018-09-20 | 2021-04-30 | 美光科技公司 | 堆叠存储器路由技术 |
US10692884B2 (en) | 2018-09-21 | 2020-06-23 | Sandisk Technologies Llc | Three-dimensional memory device including bottle-shaped memory stack structures and drain-select gate electrodes having cylindrical portions |
TWI713195B (zh) | 2018-09-24 | 2020-12-11 | 美商森恩萊斯記憶體公司 | 三維nor記憶電路製程中之晶圓接合及其形成之積體電路 |
US11018151B2 (en) | 2018-09-26 | 2021-05-25 | Sandisk Technologies Llc | Three-dimensional flat NAND memory device including wavy word lines and method of making the same |
US10622367B1 (en) | 2018-09-26 | 2020-04-14 | Sandisk Technologies Llc | Three-dimensional memory device including three-dimensional bit line discharge transistors and method of making the same |
US10553599B1 (en) | 2018-09-26 | 2020-02-04 | Sandisk Technologies Llc | Three-dimensional memory device containing drain select isolation structures and on-pitch channels and methods of making the same without an etch stop layer |
US10985171B2 (en) | 2018-09-26 | 2021-04-20 | Sandisk Technologies Llc | Three-dimensional flat NAND memory device including wavy word lines and method of making the same |
US10957706B2 (en) | 2018-10-17 | 2021-03-23 | Sandisk Technologies Llc | Multi-tier three-dimensional memory device with dielectric support pillars and methods for making the same |
US11158573B2 (en) | 2018-10-22 | 2021-10-26 | Invensas Bonding Technologies, Inc. | Interconnect structures |
US10607938B1 (en) | 2018-10-26 | 2020-03-31 | International Business Machines Corporation | Power distribution networks for monolithic three-dimensional semiconductor integrated circuit devices |
US10651196B1 (en) | 2018-11-08 | 2020-05-12 | Sandisk Technologies Llc | Three-dimensional multilevel device containing seamless unidirectional metal layer fill and method of making same |
US10629613B1 (en) | 2018-11-20 | 2020-04-21 | Sandisk Technologies Llc | Three-dimensional memory device having vertical semiconductor channels including source-side boron-doped pockets and methods of making the same |
US10868025B2 (en) | 2018-11-26 | 2020-12-15 | Sandisk Technologies Llc | Three-dimensional memory device including replacement crystalline channels and methods of making the same |
US10756106B2 (en) | 2018-11-28 | 2020-08-25 | Sandisk Technologies Llc | Three-dimensional memory device with locally modulated threshold voltages at drain select levels and methods of making the same |
US10950618B2 (en) | 2018-11-29 | 2021-03-16 | Micron Technology, Inc. | Memory arrays |
US10629675B1 (en) | 2018-12-05 | 2020-04-21 | Sandisk Technologies Llc | Three-dimensional memory device containing capacitor pillars and methods of making the same |
US10734080B2 (en) | 2018-12-07 | 2020-08-04 | Sandisk Technologies Llc | Three-dimensional memory device containing bit line switches |
US10854619B2 (en) | 2018-12-07 | 2020-12-01 | Sandisk Technologies Llc | Three-dimensional memory device containing bit line switches |
EP3891780A4 (en) | 2018-12-07 | 2022-12-21 | Sunrise Memory Corporation | METHODS OF FORMING NETWORKS OF MULTILAYER VERTICAL NOR TYPE MEMORY CHAINS |
US10741579B2 (en) | 2018-12-11 | 2020-08-11 | Sandisk Technologies Llc | Three-dimensional memory device including different height memory stack structures and methods of making the same |
EP3711091A4 (en) | 2018-12-17 | 2021-11-24 | SanDisk Technologies LLC | THREE-DIMENSIONAL STORAGE DEVICE WITH TENSIONED VERTICAL SEMICONDUCTOR CHANNELS AND PROCESS FOR THEIR PRODUCTION |
US11721727B2 (en) | 2018-12-17 | 2023-08-08 | Sandisk Technologies Llc | Three-dimensional memory device including a silicon-germanium source contact layer and method of making the same |
US10797061B2 (en) | 2018-12-17 | 2020-10-06 | Sandisk Technologies Llc | Three-dimensional memory device having stressed vertical semiconductor channels and method of making the same |
US10797060B2 (en) | 2018-12-17 | 2020-10-06 | Sandisk Technologies Llc | Three-dimensional memory device having stressed vertical semiconductor channels and method of making the same |
US11101284B2 (en) | 2018-12-18 | 2021-08-24 | Sandisk Technologies Llc | Three-dimensional memory device containing etch stop structures and methods of making the same |
US10957705B2 (en) | 2018-12-24 | 2021-03-23 | Sandisk Technologies Llc | Three-dimensional memory devices having a multi-stack bonded structure using a logic die and multiple three-dimensional memory dies and method of making the same |
US10665580B1 (en) | 2019-01-08 | 2020-05-26 | Sandisk Technologies Llc | Bonded structure including a performance-optimized support chip and a stress-optimized three-dimensional memory chip and method for making the same |
CN111430303A (zh) | 2019-01-09 | 2020-07-17 | 桑迪士克科技有限责任公司 | 单一化半导体裸芯的方法以及由其形成的单一化的裸芯 |
WO2020142989A1 (en) | 2019-01-10 | 2020-07-16 | Yangtze Memory Technologies Co., Ltd. | Structures and methods for reducing stress in three-dimensional memory device |
US10923502B2 (en) | 2019-01-16 | 2021-02-16 | Sandisk Technologies Llc | Three-dimensional ferroelectric memory devices including a backside gate electrode and methods of making same |
US10854513B2 (en) | 2019-01-16 | 2020-12-01 | Sandisk Technologies Llc | Cavity-disrupting backside trench fill structures for a three-dimensional memory device and method of making the same |
US10957680B2 (en) | 2019-01-16 | 2021-03-23 | Sandisk Technologies Llc | Semiconductor die stacking using vertical interconnection by through-dielectric via structures and methods for making the same |
US10665607B1 (en) | 2019-01-18 | 2020-05-26 | Sandisk Technologies Llc | Three-dimensional memory device including a deformation-resistant edge seal structure and methods for making the same |
US10840260B2 (en) | 2019-01-18 | 2020-11-17 | Sandisk Technologies Llc | Through-array conductive via structures for a three-dimensional memory device and methods of making the same |
US10985172B2 (en) | 2019-01-18 | 2021-04-20 | Sandisk Technologies Llc | Three-dimensional memory device with mobility-enhanced vertical channels and methods of forming the same |
US10748894B2 (en) | 2019-01-18 | 2020-08-18 | Sandisk Technologies Llc | Three-dimensional memory device containing bond pad-based power supply network for a source line and methods of making the same |
US10665581B1 (en) | 2019-01-23 | 2020-05-26 | Sandisk Technologies Llc | Three-dimensional semiconductor chip containing memory die bonded to both sides of a support die and methods of making the same |
US10886366B2 (en) | 2019-01-25 | 2021-01-05 | Sandisk Technologies Llc | Semiconductor structures for peripheral circuitry having hydrogen diffusion barriers and method of making the same |
US10727215B1 (en) | 2019-01-30 | 2020-07-28 | Sandisk Technologies Llc | Three-dimensional memory device with logic signal routing through a memory die and methods of making the same |
US11670620B2 (en) | 2019-01-30 | 2023-06-06 | Sunrise Memory Corporation | Device with embedded high-bandwidth, high-capacity memory using wafer bonding |
US11114406B2 (en) | 2019-01-31 | 2021-09-07 | Sandisk Technologies Llc | Warpage-compensated bonded structure including a support chip and a three-dimensional memory chip |
US10847408B2 (en) | 2019-01-31 | 2020-11-24 | Sandisk Technologies Llc | Warpage-compensated bonded structure including a support chip and a three-dimensional memory chip |
US10748925B1 (en) | 2019-02-05 | 2020-08-18 | Sandisk Technologies Llc | Three-dimensional memory device containing channels with laterally pegged dielectric cores |
US10748927B1 (en) | 2019-02-05 | 2020-08-18 | Sandisk Technologies Llc | Three-dimensional memory device with drain-select-level isolation structures and method of making the same |
US10903222B2 (en) | 2019-02-05 | 2021-01-26 | Sandisk Technologies Llc | Three-dimensional memory device containing a carbon-doped source contact layer and methods for making the same |
US10685978B1 (en) | 2019-02-05 | 2020-06-16 | Sandisk Technologies Llc | Three-dimensional memory device with drain-select-level isolation structures and method of making the same |
US10964715B2 (en) | 2019-02-05 | 2021-03-30 | Sandisk Technologies Llc | Three-dimensional memory device containing channels with laterally pegged dielectric cores |
US10685979B1 (en) | 2019-02-05 | 2020-06-16 | Sandisk Technologies Llc | Three-dimensional memory device with drain-select-level isolation structures and method of making the same |
US10943917B2 (en) | 2019-02-05 | 2021-03-09 | Sandisk Technologies Llc | Three-dimensional memory device with drain-select-level isolation structures and method of making the same |
US10811058B2 (en) | 2019-02-06 | 2020-10-20 | Sandisk Technologies Llc | Bonded assembly containing memory die bonded to integrated peripheral and system die and methods for making the same |
US10804282B2 (en) | 2019-02-11 | 2020-10-13 | Sandisk Technologies Llc | Three-dimensional memory devices using carbon-doped aluminum oxide backside blocking dielectric layer for etch resistivity enhancement and methods of making the same |
CN113424319A (zh) | 2019-02-11 | 2021-09-21 | 日升存储公司 | 垂直薄膜晶体管以及作为用于三维存储器阵列的位线连接器的应用 |
US10700089B1 (en) | 2019-02-12 | 2020-06-30 | Sandisk Technologies Llc | Three-dimensional memory device including locally thickened electrically conductive layers and methods of manufacturing the same |
US11508711B2 (en) | 2019-02-13 | 2022-11-22 | Sandisk Technologies Llc | Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layer |
US11201107B2 (en) | 2019-02-13 | 2021-12-14 | Sandisk Technologies Llc | Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layer |
US11355486B2 (en) | 2019-02-13 | 2022-06-07 | Sandisk Technologies Llc | Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layer |
US10629616B1 (en) | 2019-02-13 | 2020-04-21 | Sandisk Technologies Llc | Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layer |
US11195781B2 (en) | 2019-02-13 | 2021-12-07 | Sandisk Technologies Llc | Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layer |
US10741535B1 (en) | 2019-02-14 | 2020-08-11 | Sandisk Technologies Llc | Bonded assembly containing multiple memory dies sharing peripheral circuitry on a support die and methods for making the same |
US10700078B1 (en) | 2019-02-18 | 2020-06-30 | Sandisk Technologies Llc | Three-dimensional flat NAND memory device having curved memory elements and methods of making the same |
US10804202B2 (en) | 2019-02-18 | 2020-10-13 | Sandisk Technologies Llc | Bonded assembly including a semiconductor-on-insulator die and methods for making the same |
US10734400B1 (en) | 2019-02-18 | 2020-08-04 | Sandisk Technologies Llc | Three-dimensional memory device including bit lines between memory elements and an underlying peripheral circuit and methods of making the same |
US10700090B1 (en) | 2019-02-18 | 2020-06-30 | Sandisk Technologies Llc | Three-dimensional flat NAND memory device having curved memory elements and methods of making the same |
US10672780B1 (en) | 2019-02-25 | 2020-06-02 | Sandisk Technologies Llc | Three-dimensional memory device having dual configuration support pillar structures and methods for making the same |
US10879260B2 (en) | 2019-02-28 | 2020-12-29 | Sandisk Technologies Llc | Bonded assembly of a support die and plural memory dies containing laterally shifted vertical interconnections and methods for making the same |
US11424231B2 (en) | 2019-03-01 | 2022-08-23 | Sandisk Technologies Llc | Three-dimensional memory device having an epitaxial vertical semiconductor channel and method for making the same |
US11239253B2 (en) | 2019-03-01 | 2022-02-01 | Sandisk Technologies Llc | Three-dimensional memory device having an epitaxial vertical semiconductor channel and method for making the same |
US11398451B2 (en) * | 2019-03-01 | 2022-07-26 | Sandisk Technologies Llc | Methods for reusing substrates during manufacture of a bonded assembly including a logic die and a memory die |
US10985169B2 (en) | 2019-03-04 | 2021-04-20 | Sandisk Technologies Llc | Three-dimensional device with bonded structures including a support die and methods of making the same |
US10714497B1 (en) | 2019-03-04 | 2020-07-14 | Sandisk Technologies Llc | Three-dimensional device with bonded structures including a support die and methods of making the same |
US10833101B2 (en) | 2019-03-04 | 2020-11-10 | Sandisk Technologies Llc | Three-dimensional memory device with horizontal silicon channels and method of making the same |
US11069703B2 (en) | 2019-03-04 | 2021-07-20 | Sandisk Technologies Llc | Three-dimensional device with bonded structures including a support die and methods of making the same |
US11088252B2 (en) | 2019-03-04 | 2021-08-10 | Sandisk Technologies Llc | Three-dimensional memory device with a silicon carbon nitride interfacial layer in a charge storage layer and methods of making the same |
US11171150B2 (en) | 2019-03-07 | 2021-11-09 | Sandisk Technologies Llc | Three-dimensional memory device containing a channel connection strap and method for making the same |
US11127655B2 (en) | 2019-03-07 | 2021-09-21 | Sandisk Technologies Llc | Memory die containing through-memory-level via structure and methods for making the same |
US10937800B2 (en) | 2019-03-13 | 2021-03-02 | Sandisk Technologies Llc | Three-dimensional memory device with on-axis self-aligned drain-select-level isolation structure and methods of manufacturing the same |
US10777575B1 (en) | 2019-03-22 | 2020-09-15 | Sandisk Technologies Llc | Three-dimensional memory device with self-aligned vertical conductive strips having a gate-all-around configuration and method of making the same |
US10937801B2 (en) | 2019-03-22 | 2021-03-02 | Sandisk Technologies Llc | Three-dimensional memory device containing a polygonal lattice of support pillar structures and contact via structures and methods of manufacturing the same |
US10847524B2 (en) | 2019-03-25 | 2020-11-24 | Sandisk Technologies Llc | Three-dimensional memory device having double-width staircase regions and methods of manufacturing the same |
US10879262B2 (en) | 2019-03-27 | 2020-12-29 | Sandisk Technologies Llc | Three-dimensional memory device containing eye-shaped contact via structures located in laterally-undulating trenches and method of making the same |
US10985176B2 (en) | 2019-03-27 | 2021-04-20 | Sandisk Technologies Llc | Three-dimensional memory device containing eye-shaped contact via structures located in laterally-undulating trenches and method of making the same |
US10804197B1 (en) | 2019-03-28 | 2020-10-13 | Sandisk Technologies Llc | Memory die containing stress reducing backside contact via structures and method of making the same |
US10658381B1 (en) | 2019-03-28 | 2020-05-19 | Sandisk Technologies Llc | Memory die having wafer warpage reduction through stress balancing employing rotated three-dimensional memory arrays and method of making the same |
US10854629B2 (en) | 2019-03-28 | 2020-12-01 | Sandisk Technologies Llc | Three-dimensional memory device containing asymmetric, different size support pillars and method for making the same |
US11107901B2 (en) | 2019-04-03 | 2021-08-31 | Sandisk Technologies Llc | Charge storage memory device including ferroelectric layer between control gate electrode layers and methods of making the same |
US11763864B2 (en) | 2019-04-08 | 2023-09-19 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures with bit-line pillars |
US11158652B1 (en) | 2019-04-08 | 2021-10-26 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures |
US11018156B2 (en) | 2019-04-08 | 2021-05-25 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures |
US11296106B2 (en) | 2019-04-08 | 2022-04-05 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures |
US10892016B1 (en) | 2019-04-08 | 2021-01-12 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures |
US10756110B1 (en) | 2019-04-10 | 2020-08-25 | Sandisk Technologies Llc | Method of forming seamless drain-select-level electrodes for a three-dimensional memory device and structures formed by the same |
KR102601225B1 (ko) * | 2019-04-15 | 2023-11-10 | 양쯔 메모리 테크놀로지스 씨오., 엘티디. | 복수의 기능 칩이 있는 3차원 nand 메모리 디바이스의 집적화 |
US10797062B1 (en) | 2019-04-16 | 2020-10-06 | Sandisk Technologies Llc | Bonded die assembly using a face-to-back oxide bonding and methods for making the same |
US11004773B2 (en) | 2019-04-23 | 2021-05-11 | Sandisk Technologies Llc | Porous barrier layer for improving reliability of through-substrate via structures and methods of forming the same |
US10923498B2 (en) | 2019-04-25 | 2021-02-16 | Sandisk Technologies Llc | Three-dimensional memory device containing direct source contact structure and methods for making the same |
KR20210113644A (ko) * | 2019-04-30 | 2021-09-16 | 양쯔 메모리 테크놀로지스 씨오., 엘티디. | 접합된 통합형 반도체 칩과 그 제조 및 작동 방법 |
KR102661281B1 (ko) * | 2019-04-30 | 2024-04-30 | 양쯔 메모리 테크놀로지스 씨오., 엘티디. | 플래시 메모리 컨트롤러를 갖는 본딩된 메모리 장치 및 이의 제조 및 작동 방법 |
US10861873B2 (en) | 2019-05-07 | 2020-12-08 | Sandisk Technologies Llc | Three-dimensional memory device including signal and power connection lines extending through dielectric regions and methods of making the same |
US10872899B2 (en) | 2019-05-07 | 2020-12-22 | Sandisk Technologies Llc | Three-dimensional memory device including signal and power connection lines extending through dielectric regions and methods of making the same |
US10804291B1 (en) | 2019-05-09 | 2020-10-13 | Sandisk Technologies Llc | Three-dimensional memory device using epitaxial semiconductor channels and a buried source line and method of making the same |
US10727216B1 (en) | 2019-05-10 | 2020-07-28 | Sandisk Technologies Llc | Method for removing a bulk substrate from a bonded assembly of wafers |
US11469251B2 (en) | 2019-05-15 | 2022-10-11 | Sandisk Technologies Llc | Memory device using a multilayer ferroelectric stack and method of forming the same |
US10727276B1 (en) | 2019-05-24 | 2020-07-28 | Sandisk Technologies Llc | Three-dimensional NAND memory device containing two terminal selector and methods of using and making thereof |
US11244983B2 (en) | 2019-06-25 | 2022-02-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | MRAM memory cell layout for minimizing bitcell area |
US11037908B2 (en) | 2019-07-25 | 2021-06-15 | Sandisk Technologies Llc | Bonded die assembly containing partially filled through-substrate via structures and methods for making the same |
US10991705B2 (en) | 2019-07-30 | 2021-04-27 | Sandisk Technologies Llc | Three-dimensional memory device having enhanced contact between polycrystalline channel and epitaxial pedestal structure and method of making the same |
US10991706B2 (en) | 2019-07-30 | 2021-04-27 | Sandisk Technologies Llc | Three-dimensional memory device having enhanced contact between polycrystalline channel and epitaxial pedestal structure and method of making the same |
US11024645B2 (en) | 2019-07-30 | 2021-06-01 | Sandisk Technologies Llc | Three-dimensional memory device containing a silicon nitride ring in an opening in a memory film and method of making the same |
US10991718B2 (en) | 2019-07-30 | 2021-04-27 | Sandisk Technologies Llc | Three-dimensional memory device containing a vertical semiconductor channel containing a connection strap and method of making the same |
US11239254B2 (en) | 2019-08-02 | 2022-02-01 | Sandisk Technologies Llc | Three-dimensional memory device containing epitaxial ferroelectric memory elements and methods for forming the same |
US11049880B2 (en) | 2019-08-02 | 2021-06-29 | Sandisk Technologies Llc | Three-dimensional memory device containing epitaxial ferroelectric memory elements and methods for forming the same |
US11502104B2 (en) | 2019-08-15 | 2022-11-15 | Sandisk Technologies Llc | Antiferroelectric memory devices and methods of making the same |
US11430813B2 (en) | 2019-08-15 | 2022-08-30 | Sandisk Technologies Llc | Antiferroelectric memory devices and methods of making the same |
US10937809B1 (en) | 2019-08-15 | 2021-03-02 | Sandisk Technologies Llc | Three-dimensional memory device containing ferroelectric memory elements encapsulated by transition metal nitride materials and method of making thereof |
US11024648B2 (en) | 2019-08-15 | 2021-06-01 | Sandisk Technologies Llc | Ferroelectric memory devices including a stack of ferroelectric and antiferroelectric layers and method of making the same |
US11573834B2 (en) * | 2019-08-22 | 2023-02-07 | Micron Technology, Inc. | Computational partition for a multi-threaded, self-scheduling reconfigurable computing fabric |
US11139237B2 (en) | 2019-08-22 | 2021-10-05 | Sandisk Technologies Llc | Three-dimensional memory device containing horizontal and vertical word line interconnections and methods of forming the same |
US11309332B2 (en) | 2019-09-12 | 2022-04-19 | Sandisk Technologies Llc | Three-dimensional memory device containing ferroelectric memory elements encapsulated by transition metal-containing conductive elements and method of making thereof |
US10910020B1 (en) | 2019-09-24 | 2021-02-02 | Sandisk Technologies Llc | Three-dimensional memory device containing compact bit line switch circuit and method of making the same |
US11049807B2 (en) | 2019-09-25 | 2021-06-29 | Sandisk Technologies Llc | Three-dimensional memory device containing tubular blocking dielectric spacers |
US11011209B2 (en) | 2019-10-01 | 2021-05-18 | Sandisk Technologies Llc | Three-dimensional memory device including contact-level bit-line-connection structures and methods of making the same |
US11069631B2 (en) | 2019-10-07 | 2021-07-20 | Sandisk Technologies Llc | Three-dimensional memory die containing stress-compensating slit trench structures and methods for making the same |
US11289429B2 (en) | 2019-10-07 | 2022-03-29 | Sandisk Technologies Llc | Three-dimensional memory die containing stress-compensating slit trench structures and methods for making the same |
CN112635476B (zh) | 2019-10-12 | 2023-08-08 | 长江存储科技有限责任公司 | 具有氢阻挡层的三维存储设备及其制造方法 |
JP2021064762A (ja) * | 2019-10-17 | 2021-04-22 | 本田技研工業株式会社 | 半導体装置 |
US10903237B1 (en) | 2019-11-01 | 2021-01-26 | Sandisk Technologies Llc | Three-dimensional memory device including stepped connection plates and methods of forming the same |
US11114459B2 (en) | 2019-11-06 | 2021-09-07 | Sandisk Technologies Llc | Three-dimensional memory device containing width-modulated connection strips and methods of forming the same |
US11094653B2 (en) | 2019-11-13 | 2021-08-17 | Sandisk Technologies Llc | Bonded assembly containing a dielectric bonding pattern definition layer and methods of forming the same |
US11257835B2 (en) | 2019-11-22 | 2022-02-22 | Sandisk Technologies Llc | Three-dimensional memory device containing a dummy memory film isolation structure and method of making thereof |
US11088116B2 (en) * | 2019-11-25 | 2021-08-10 | Sandisk Technologies Llc | Bonded assembly containing horizontal and vertical bonding interfaces and methods of forming the same |
US11289416B2 (en) | 2019-11-26 | 2022-03-29 | Sandisk Technologies Llc | Three-dimensional memory device containing amorphous and crystalline blocking dielectric layers |
US11201111B2 (en) | 2019-11-27 | 2021-12-14 | Sandisk Technologies Llc | Three-dimensional memory device containing structures for enhancing gate-induced drain leakage current and methods of forming the same |
US10950627B1 (en) | 2019-12-09 | 2021-03-16 | Sandisk Technologies Llc | Three-dimensional memory device including split memory cells and methods of forming the same |
US11063063B2 (en) | 2019-12-11 | 2021-07-13 | Sandisk Technologies Llc | Three-dimensional memory device containing plural work function word lines and methods of forming the same |
US11101288B2 (en) | 2019-12-11 | 2021-08-24 | Sandisk Technologies Llc | Three-dimensional memory device containing plural work function word lines and methods of forming the same |
US11515309B2 (en) | 2019-12-19 | 2022-11-29 | Sunrise Memory Corporation | Process for preparing a channel region of a thin-film transistor in a 3-dimensional thin-film transistor array |
US11387250B2 (en) | 2019-12-20 | 2022-07-12 | Sandisk Technologies Llc | Three-dimensional memory device containing metal-organic framework inter-word line insulating layers |
US11296028B2 (en) | 2019-12-20 | 2022-04-05 | Sandisk Technologies Llc | Semiconductor device containing metal-organic framework inter-line insulator structures and methods of manufacturing the same |
US11114534B2 (en) | 2019-12-27 | 2021-09-07 | Sandisk Technologies Llc | Three-dimensional nor array including vertical word lines and discrete channels and methods of making the same |
US11088076B2 (en) | 2019-12-27 | 2021-08-10 | Sandisk Technologies Llc | Bonding pads embedded in a dielectric diffusion barrier and having recessed metallic liners |
US11282783B2 (en) | 2020-01-07 | 2022-03-22 | Sandisk Technologies Llc | Three-dimensional memory device with via structures surrounded by perforated dielectric moat structure and methods of making the same |
US11756877B2 (en) | 2020-01-07 | 2023-09-12 | Sandisk Technologies Llc | Three-dimensional memory device with via structures surrounded by perforated dielectric moat structure and methods of making the same |
US11121140B2 (en) | 2020-01-08 | 2021-09-14 | Sandisk Technologies Llc | Ferroelectric tunnel junction memory device with integrated ovonic threshold switches |
US11270963B2 (en) | 2020-01-14 | 2022-03-08 | Sandisk Technologies Llc | Bonding pads including interfacial electromigration barrier layers and methods of making the same |
US11342244B2 (en) | 2020-01-21 | 2022-05-24 | Sandisk Technologies Llc | Bonded assembly of semiconductor dies containing pad level across-die metal wiring and method of forming the same |
US11211370B2 (en) | 2020-01-28 | 2021-12-28 | Sandisk Technologies Llc | Bonded assembly with vertical power and control signal connection adjacent to sense amplifier regions and methods of forming the same |
US11171097B2 (en) | 2020-01-28 | 2021-11-09 | Sandisk Technologies Llc | Bonded assembly containing metal-organic framework bonding dielectric and methods of forming the same |
US11646283B2 (en) | 2020-01-28 | 2023-05-09 | Sandisk Technologies Llc | Bonded assembly containing low dielectric constant bonding dielectric material |
US11133252B2 (en) | 2020-02-05 | 2021-09-28 | Sandisk Technologies Llc | Three-dimensional memory device containing horizontal and vertical word line interconnections and methods of forming the same |
US11675500B2 (en) | 2020-02-07 | 2023-06-13 | Sunrise Memory Corporation | High capacity memory circuit with low effective latency |
CN115362436A (zh) | 2020-02-07 | 2022-11-18 | 日升存储公司 | 准易失性系统级存储器 |
US11101289B1 (en) | 2020-02-19 | 2021-08-24 | Sandisk Technologies Llc | Three-dimensional memory device with composite charge storage structures and methods for forming the same |
US11114462B1 (en) | 2020-02-19 | 2021-09-07 | Sandisk Technologies Llc | Three-dimensional memory device with composite charge storage structures and methods for forming the same |
US11507301B2 (en) | 2020-02-24 | 2022-11-22 | Sunrise Memory Corporation | Memory module implementing memory centric architecture |
WO2021173209A1 (en) | 2020-02-24 | 2021-09-02 | Sunrise Memory Corporation | High capacity memory module including wafer-section memory circuit |
US11561911B2 (en) | 2020-02-24 | 2023-01-24 | Sunrise Memory Corporation | Channel controller for shared memory access |
US11244953B2 (en) | 2020-02-26 | 2022-02-08 | Sandisk Technologies Llc | Three-dimensional memory device including molybdenum word lines and metal oxide spacers and method of making the same |
US11569260B2 (en) | 2020-02-26 | 2023-01-31 | Sandisk Technologies Llc | Three-dimensional memory device including discrete memory elements and method of making the same |
US11430745B2 (en) | 2020-03-02 | 2022-08-30 | Sandisk Technologies Llc | Semiconductor die containing silicon nitride stress compensating regions and method for making the same |
US11201139B2 (en) | 2020-03-20 | 2021-12-14 | Sandisk Technologies Llc | Semiconductor structure containing reentrant shaped bonding pads and methods of forming the same |
US11527500B2 (en) | 2020-03-20 | 2022-12-13 | Sandisk Technologies Llc | Semiconductor structure containing multilayer bonding pads and methods of forming the same |
US11145628B1 (en) | 2020-03-20 | 2021-10-12 | Sandisk Technologies Llc | Semiconductor structure containing reentrant shaped bonding pads and methods of forming the same |
US11222954B2 (en) | 2020-03-24 | 2022-01-11 | Sandisk Technologies Llc | Three-dimensional memory device containing inter-select-gate electrodes and methods of making the same |
US11049568B1 (en) | 2020-03-27 | 2021-06-29 | Sandisk Technologies Llc | Three-dimensional memory device with depletion region position control and method of erasing same using gate induced leakage |
US11515227B2 (en) | 2020-04-02 | 2022-11-29 | Sandisk Technologies Llc | Semiconductor die including edge ring structures and methods for making the same |
US11342286B2 (en) | 2020-04-02 | 2022-05-24 | Sandisk Technologies Llc | Semiconductor die including edge ring structures and methods for making the same |
US11289388B2 (en) | 2020-04-02 | 2022-03-29 | Sandisk Technologies Llc | Semiconductor die including edge ring structures and methods for making the same |
US11705496B2 (en) | 2020-04-08 | 2023-07-18 | Sunrise Memory Corporation | Charge-trapping layer with optimized number of charge-trapping sites for fast program and erase of a memory cell in a 3-dimensional NOR memory string array |
US11659711B2 (en) | 2020-04-15 | 2023-05-23 | Sandisk Technologies Llc | Three-dimensional memory device including discrete charge storage elements and methods of forming the same |
US11398496B2 (en) | 2020-04-27 | 2022-07-26 | Sandisk Technologies Llc | Three-dimensional memory device employing thinned insulating layers and methods for forming the same |
US11489043B2 (en) | 2020-04-27 | 2022-11-01 | Sandisk Technologies Llc | Three-dimensional memory device employing thinned insulating layers and methods for forming the same |
US11152284B1 (en) | 2020-05-07 | 2021-10-19 | Sandisk Technologies Llc | Three-dimensional memory device with a dielectric isolation spacer and methods of forming the same |
US11637119B2 (en) | 2020-05-18 | 2023-04-25 | Sandisk Technologies Llc | Three-dimensional memory device containing auxiliary support pillar structures and method of making the same |
US11637118B2 (en) | 2020-05-18 | 2023-04-25 | Sandisk Technologies Llc | Three-dimensional memory device containing auxiliary support pillar structures and method of making the same |
US11398497B2 (en) | 2020-05-18 | 2022-07-26 | Sandisk Technologies Llc | Three-dimensional memory device containing auxiliary support pillar structures and method of making the same |
US11177280B1 (en) | 2020-05-18 | 2021-11-16 | Sandisk Technologies Llc | Three-dimensional memory device including wrap around word lines and methods of forming the same |
US11367736B2 (en) | 2020-05-22 | 2022-06-21 | Sandisk Technologies Llc | Through-stack contact via structures for a three-dimensional memory device and methods of forming the same |
US11342245B2 (en) | 2020-05-22 | 2022-05-24 | Sandisk Technologies Llc | Through-stack contact via structures for a three-dimensional memory device and methods of forming the same |
US11355506B2 (en) | 2020-05-22 | 2022-06-07 | Sandisk Technologies Llc | Through-stack contact via structures for a three-dimensional memory device and methods of forming the same |
US11508748B2 (en) | 2020-05-29 | 2022-11-22 | Sandisk Technologies Llc | Three-dimensional memory device containing III-V compound semiconductor channel and contacts and method of making the same |
US11374020B2 (en) | 2020-05-29 | 2022-06-28 | Sandisk Technologies Llc | Three-dimensional memory device containing III-V compound semiconductor channel and contacts and method of making the same |
US11282857B2 (en) | 2020-05-29 | 2022-03-22 | Sandisk Technologies Llc | Three-dimensional memory device containing III-V compound semiconductor channel and contacts and method of making the same |
US11398488B2 (en) | 2020-06-05 | 2022-07-26 | Sandisk Technologies Llc | Three-dimensional memory device including through-memory-level via structures and methods of making the same |
US11515317B2 (en) | 2020-06-05 | 2022-11-29 | Sandisk Technologies Llc | Three-dimensional memory device including through-memory-level via structures and methods of making the same |
US11404427B2 (en) | 2020-06-12 | 2022-08-02 | Sandisk Technologies Llc | Three-dimensional memory device including multi-tier moat isolation structures and methods of making the same |
US11508749B2 (en) | 2020-06-15 | 2022-11-22 | Sandisk Technologies Llc | Cutoff gate electrodes for switches for a three-dimensional memory device and method of making the same |
US11521984B2 (en) | 2020-06-24 | 2022-12-06 | Sandisk Technologies Llc | Three-dimensional memory device containing low resistance source-level contact and method of making thereof |
US11778817B2 (en) | 2020-06-25 | 2023-10-03 | Sandisk Technologies Llc | Three-dimensional memory device including III-V compound semiconductor channel layer and method of making the same |
US11302713B2 (en) | 2020-06-25 | 2022-04-12 | Sandisk Technologies Llc | Three-dimensional memory device including III-V compound semiconductor channel layer and method of making the same |
US11903218B2 (en) | 2020-06-26 | 2024-02-13 | Sandisk Technologies Llc | Bonded memory devices and methods of making the same |
US11538817B2 (en) | 2020-06-26 | 2022-12-27 | Sandisk Technologies Llc | Bonded memory devices and methods of making the same |
US11342347B2 (en) | 2020-06-30 | 2022-05-24 | Sandisk Technologies Llc | Spacerless source contact layer replacement process and three-dimensional memory device formed by the process |
US11444101B2 (en) | 2020-06-30 | 2022-09-13 | Sandisk Technologies Llc | Spacerless source contact layer replacement process and three-dimensional memory device formed by the process |
US11495612B2 (en) | 2020-07-01 | 2022-11-08 | Sandisk Technologies Llc | Three-dimensional memory device including stairless word line contact structures for and method of making the same |
US11973026B2 (en) | 2020-07-01 | 2024-04-30 | Sandisk Technologies Llc | Three-dimensional memory device including stairless word line contact structures and method of making the same |
US11450679B2 (en) | 2020-07-01 | 2022-09-20 | Sandisk Technologies Llc | Three-dimensional memory device including stairless word line contact structures for and method of making the same |
US11778818B2 (en) | 2020-07-21 | 2023-10-03 | Sandisk Technologies Llc | Three-dimensional memory device with punch-through-resistant word lines and methods for forming the same |
US11587920B2 (en) | 2020-07-22 | 2023-02-21 | Sandisk Technologies Llc | Bonded semiconductor die assembly containing through-stack via structures and methods for making the same |
US11355437B2 (en) | 2020-08-04 | 2022-06-07 | Sandisk Technologies Llc | Three-dimensional memory device including bump-containing bit lines and methods for manufacturing the same |
US11410924B2 (en) | 2020-08-21 | 2022-08-09 | Sandisk Technologies Llc | Three-dimensional memory device including contact via structures for multi-level stepped surfaces and methods for forming the same |
US11430736B2 (en) | 2020-08-24 | 2022-08-30 | Sandisk Technologies Llc | Semiconductor device including having metal organic framework interlayer dielectric layer between metal lines and methods of forming the same |
US11296113B2 (en) | 2020-08-31 | 2022-04-05 | Sandisk Technologies Llc | Three-dimensional memory device with vertical field effect transistors and method of making thereof |
US11569215B2 (en) | 2020-08-31 | 2023-01-31 | Sandisk Technologies Llc | Three-dimensional memory device with vertical field effect transistors and method of making thereof |
US11937424B2 (en) | 2020-08-31 | 2024-03-19 | Sunrise Memory Corporation | Thin-film storage transistors in a 3-dimensional array of nor memory strings and process for fabricating the same |
US11963352B2 (en) | 2020-08-31 | 2024-04-16 | Sandisk Technologies Llc | Three-dimensional memory device with vertical field effect transistors and method of making thereof |
US11355163B2 (en) | 2020-09-29 | 2022-06-07 | Alibaba Group Holding Limited | Memory interconnection architecture systems and methods |
US11963354B2 (en) | 2020-09-30 | 2024-04-16 | Sandisk Technologies Llc | Three-dimensional memory device with dielectric or semiconductor wall support structures and method of forming the same |
US11322440B2 (en) | 2020-09-30 | 2022-05-03 | Sandisk Technologies Llc | Three-dimensional memory device with dielectric wall support structures and method of forming the same |
US11600635B2 (en) | 2020-10-13 | 2023-03-07 | Sandisk Technologies Llc | Three-dimensional memory device containing bump stack structures and method of deformation measurement thereof |
US11264357B1 (en) | 2020-10-20 | 2022-03-01 | Invensas Corporation | Mixed exposure for large die |
US11488975B2 (en) | 2020-10-27 | 2022-11-01 | Sandisk Technologies Llc | Multi-tier three-dimensional memory device with nested contact via structures and methods for forming the same |
US11631695B2 (en) | 2020-10-30 | 2023-04-18 | Sandisk Technologies Llc | Three-dimensional memory device containing composite word lines containing metal and silicide and method of making thereof |
US11842777B2 (en) | 2020-11-17 | 2023-12-12 | Sunrise Memory Corporation | Methods for reducing disturb errors by refreshing data alongside programming or erase operations |
US11393757B2 (en) | 2020-11-19 | 2022-07-19 | Sandisk Technologies Llc | Three-dimensional memory device containing oxidation-resistant contact structures and methods of making the same |
US11848056B2 (en) | 2020-12-08 | 2023-12-19 | Sunrise Memory Corporation | Quasi-volatile memory with enhanced sense amplifier operation |
US11380707B2 (en) | 2020-12-09 | 2022-07-05 | Sandisk Technologies Llc | Three-dimensional memory device including backside trench support structures and methods of forming the same |
US11631690B2 (en) | 2020-12-15 | 2023-04-18 | Sandisk Technologies Llc | Three-dimensional memory device including trench-isolated memory planes and method of making the same |
US11676954B2 (en) | 2020-12-28 | 2023-06-13 | Sandisk Technologies Llc | Bonded three-dimensional memory devices with backside source power supply mesh and methods of making the same |
US11844222B2 (en) | 2021-01-12 | 2023-12-12 | Sandisk Technologies Llc | Three-dimensional memory device with backside support pillar structures and methods of forming the same |
US11515250B2 (en) | 2021-02-03 | 2022-11-29 | Sandisk Technologies Llc | Three dimensional semiconductor device containing composite contact via structures and methods of making the same |
US11532570B2 (en) | 2021-02-11 | 2022-12-20 | Sandisk Technologies Llc | Three-dimensional memory device containing bridges for enhanced structural support and methods of forming the same |
US11450685B2 (en) | 2021-02-11 | 2022-09-20 | Sandisk Technologies Llc | Three-dimensional memory device containing bridges for enhanced structural support and methods of forming the same |
US11569139B2 (en) | 2021-03-02 | 2023-01-31 | Western Digital Technologies, Inc. | Electrical overlay measurement methods and structures for wafer-to-wafer bonding |
US11621202B2 (en) | 2021-03-02 | 2023-04-04 | Western Digital Technologies, Inc. | Electrical overlay measurement methods and structures for wafer-to-wafer bonding |
US11749600B2 (en) | 2021-04-07 | 2023-09-05 | Sandisk Technologies Llc | Three-dimensional memory device with hybrid staircase structure and methods of forming the same |
US11758730B2 (en) | 2021-05-10 | 2023-09-12 | Sandisk Technologies Llc | Bonded assembly of a memory die and a logic die including laterally shifted bit-line bonding pads and methods of forming the same |
US11877446B2 (en) * | 2021-06-11 | 2024-01-16 | Sandisk Technologies Llc | Three-dimensional memory device with electrically conductive layers containing vertical tubular liners and methods for forming the same |
TW202310429A (zh) | 2021-07-16 | 2023-03-01 | 美商日升存儲公司 | 薄膜鐵電電晶體的三維記憶體串陣列 |
US11792988B2 (en) | 2021-08-09 | 2023-10-17 | Sandisk Technologies Llc | Three-dimensional memory device with separated contact regions and methods for forming the same |
US11889694B2 (en) | 2021-08-09 | 2024-01-30 | Sandisk Technologies Llc | Three-dimensional memory device with separated contact regions and methods for forming the same |
US11925027B2 (en) | 2021-12-27 | 2024-03-05 | Sandisk Technologies Llc | Three-dimensional memory device including sense amplifiers having a common width and separation |
Citations (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5837948A (ja) * | 1981-08-31 | 1983-03-05 | Toshiba Corp | 積層半導体記憶装置 |
JPS58139449A (ja) * | 1982-02-15 | 1983-08-18 | Fujitsu Ltd | 垂直信号線を有する多層集積回路 |
JPS62190744A (ja) * | 1986-02-18 | 1987-08-20 | Agency Of Ind Science & Technol | 垂直配線構造 |
JPS62208665A (ja) * | 1986-03-07 | 1987-09-12 | Mitsubishi Electric Corp | 積層形半導体記憶装置 |
JPS62239400A (ja) * | 1986-04-08 | 1987-10-20 | Nec Corp | ランダムアクセスメモリ |
JPS62259285A (ja) * | 1986-05-06 | 1987-11-11 | Mitsubishi Electric Corp | 記憶装置のアドレス指定方式 |
JPS62272556A (ja) * | 1986-05-20 | 1987-11-26 | Fujitsu Ltd | 三次元半導体集積回路装置及びその製造方法 |
JPS63149900A (ja) * | 1986-12-15 | 1988-06-22 | Toshiba Corp | 半導体メモリ |
JPS63213943A (ja) * | 1987-03-03 | 1988-09-06 | Sharp Corp | 三次元半導体集積回路の製造方法 |
JPH01268151A (ja) * | 1988-04-20 | 1989-10-25 | Sharp Corp | 半導体装置 |
JPH02178960A (ja) * | 1988-12-29 | 1990-07-11 | Sharp Corp | 神経回路装置 |
JPH02195598A (ja) * | 1989-01-25 | 1990-08-02 | Hitachi Ltd | 半導体記憶装置 |
JPH02239652A (ja) * | 1989-03-14 | 1990-09-21 | Toshiba Corp | 半導体装置 |
JPH02239627A (ja) * | 1989-03-13 | 1990-09-21 | Fuji Electric Co Ltd | 半導体チップの電極形成方法 |
JPH02256264A (ja) * | 1988-12-23 | 1990-10-17 | Matsushita Electric Ind Co Ltd | 積層集積回路 |
JPH0366161A (ja) * | 1989-08-04 | 1991-03-20 | Olympus Optical Co Ltd | 三次元集積メモリ |
JPH03175664A (ja) * | 1989-12-04 | 1991-07-30 | Sharp Corp | 半導体装置 |
JPH03225696A (ja) * | 1990-01-30 | 1991-10-04 | Sharp Corp | 半導体記憶装置 |
WO1991016656A1 (en) * | 1990-04-24 | 1991-10-31 | Seiko Epson Corporation | Semiconductor device provided with circuit cell and array, and data input-output device |
JPH0410649A (ja) * | 1990-04-27 | 1992-01-14 | Shimadzu Corp | 3次元実装用半導体基板の製造方法 |
JPH04195995A (ja) * | 1990-11-28 | 1992-07-15 | Toshiba Corp | 半導体記憶装置 |
JPH04228196A (ja) * | 1990-04-18 | 1992-08-18 | Hitachi Ltd | 半導体集積回路 |
JPH04356956A (ja) * | 1991-06-03 | 1992-12-10 | Sharp Corp | 半導体装置及びその製造方法 |
JPH05167007A (ja) * | 1991-12-13 | 1993-07-02 | Sony Corp | 半導体装置とその製造方法 |
JPH05250900A (ja) * | 1992-03-09 | 1993-09-28 | Mitsubishi Electric Corp | テスト機能付き半導体集積回路 |
JPH06251172A (ja) * | 1993-02-26 | 1994-09-09 | Hitachi Ltd | 半導体集積回路システム装置 |
JPH06291250A (ja) * | 1993-04-06 | 1994-10-18 | Nec Corp | 半導体集積回路およびその形成方法 |
WO1995009438A1 (en) * | 1993-09-30 | 1995-04-06 | Kopin Corporation | Three-dimensional processor using transferred thin film circuits |
JPH07504782A (ja) * | 1992-02-13 | 1995-05-25 | コピン・コーポレーシヨン | 高密度電子回路モジュール |
JPH07508614A (ja) * | 1992-04-08 | 1995-09-21 | リーディ,グレン・ジェイ | 膜絶縁層分離ic製造 |
JPH0883883A (ja) * | 1994-06-16 | 1996-03-26 | Internatl Business Mach Corp <Ibm> | 薄膜フローティング・ゲート・アモルファス・トランジスタを利用する不揮発性並直列変換器システム |
JPH08504060A (ja) * | 1992-12-03 | 1996-04-30 | イルビン センサーズ コーポレーション | Icマイクロプロセッサ用で、構造的にicマイクロプロセッサに組み合わされたicメモリー積層を含むモジュール |
JPH08264712A (ja) * | 1995-03-27 | 1996-10-11 | Matsushita Electron Corp | 半導体装置 |
JPH0945871A (ja) * | 1995-08-03 | 1997-02-14 | Sharp Corp | 半導体記憶装置及びその製造方法 |
JPH0992781A (ja) * | 1995-09-22 | 1997-04-04 | Internatl Business Mach Corp <Ibm> | 統合した回路を有するマルチチップ半導体構造およびその製造方法 |
Family Cites Families (216)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US555212A (en) * | 1896-02-25 | dickersos | ||
US2915722A (en) | 1957-05-13 | 1959-12-01 | Inductosyn Corp | Pattern for slider of position measuring transformer |
GB914656A (ja) | 1959-11-10 | |||
US3430835A (en) * | 1966-06-07 | 1969-03-04 | Westinghouse Electric Corp | Wire bonding apparatus for microelectronic components |
US3445925A (en) * | 1967-04-25 | 1969-05-27 | Motorola Inc | Method for making thin semiconductor dice |
NL6706735A (ja) | 1967-05-13 | 1968-11-14 | ||
US3560364A (en) * | 1968-10-10 | 1971-02-02 | Ibm | Method for preparing thin unsupported films of silicon nitride |
DE1812199C3 (de) * | 1968-12-02 | 1980-07-03 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Integrierte, optisch-elektronische Festkörper-Schaltungsanordnung |
US3615901A (en) | 1969-12-01 | 1971-10-26 | Gustav K Medicus | Method of making a plastically shapeable cathode material |
US3716429A (en) * | 1970-06-18 | 1973-02-13 | Rca Corp | Method of making semiconductor devices |
US3777227A (en) | 1972-08-21 | 1973-12-04 | Westinghouse Electric Corp | Double diffused high voltage, high current npn transistor |
US3922705A (en) | 1973-06-04 | 1975-11-25 | Gen Electric | Dielectrically isolated integral silicon diaphram or other semiconductor product |
US3868565A (en) * | 1973-07-30 | 1975-02-25 | Jack Kuipers | Object tracking and orientation determination means, system and process |
US4070230A (en) * | 1974-07-04 | 1978-01-24 | Siemens Aktiengesellschaft | Semiconductor component with dielectric carrier and its manufacture |
US3932932A (en) * | 1974-09-16 | 1976-01-20 | International Telephone And Telegraph Corporation | Method of making multilayer printed circuit board |
US3997381A (en) | 1975-01-10 | 1976-12-14 | Intel Corporation | Method of manufacture of an epitaxial semiconductor layer on an insulating substrate |
US4028547A (en) | 1975-06-30 | 1977-06-07 | Bell Telephone Laboratories, Incorporated | X-ray photolithography |
US4196232A (en) * | 1975-12-18 | 1980-04-01 | Rca Corporation | Method of chemically vapor-depositing a low-stress glass layer |
US4142004A (en) * | 1976-01-22 | 1979-02-27 | Bell Telephone Laboratories, Incorporated | Method of coating semiconductor substrates |
NL7607095A (nl) * | 1976-06-29 | 1978-01-02 | Philips Nv | Trefplaatmontage voor een opneembuis, en werkwijze voor de vervaardiging daarvan. |
GB1542084A (en) * | 1976-08-31 | 1979-03-14 | Standard Telephones Cables Ltd | Thin silicon semiconductor devices |
US4249302A (en) * | 1978-12-28 | 1981-02-10 | Ncr Corporation | Multilayer printed circuit board |
JPS55156395A (en) | 1979-05-24 | 1980-12-05 | Fujitsu Ltd | Method of fabricating hollow multilayer printed board |
JPS5930130B2 (ja) * | 1979-09-20 | 1984-07-25 | 富士通株式会社 | 気相成長方法 |
US4262631A (en) * | 1979-10-01 | 1981-04-21 | Kubacki Ronald M | Thin film deposition apparatus using an RF glow discharge |
US4401986A (en) | 1979-12-26 | 1983-08-30 | Texas Instruments Incorporated | Position sensor and system |
US4416054A (en) * | 1980-07-01 | 1983-11-22 | Westinghouse Electric Corp. | Method of batch-fabricating flip-chip bonded dual integrated circuit arrays |
JPS5747711A (en) | 1980-08-08 | 1982-03-18 | Fujitsu Ltd | Chemical plasma growing method in vapor phase |
DE3070833D1 (en) | 1980-09-19 | 1985-08-08 | Ibm Deutschland | Structure with a silicon body that presents an aperture and method of making this structure |
US4500905A (en) * | 1981-09-30 | 1985-02-19 | Tokyo Shibaura Denki Kabushiki Kaisha | Stacked semiconductor device with sloping sides |
JPS58111491A (ja) * | 1981-12-25 | 1983-07-02 | Nippon Kogaku Kk <Nikon> | 固体撮像装置 |
US4585991A (en) * | 1982-06-03 | 1986-04-29 | Texas Instruments Incorporated | Solid state multiprobe testing apparatus |
US4416064A (en) | 1982-06-30 | 1983-11-22 | Hurst Roger W | Ladder bar dial |
US4622632A (en) | 1982-08-18 | 1986-11-11 | Board Of Regents, University Of Washington | Data processing system having a pyramidal array of processors |
US4761681A (en) * | 1982-09-08 | 1988-08-02 | Texas Instruments Incorporated | Method for fabricating a semiconductor contact and interconnect structure using orientation dependent etching and thermomigration |
US4663559A (en) * | 1982-09-17 | 1987-05-05 | Christensen Alton O | Field emission device |
JPS59117271A (ja) * | 1982-12-24 | 1984-07-06 | Hitachi Ltd | 圧力感知素子を有する半導体装置とその製造法 |
US4604162A (en) | 1983-06-13 | 1986-08-05 | Ncr Corporation | Formation and planarization of silicon-on-insulator structures |
JPH0743959B2 (ja) * | 1984-02-06 | 1995-05-15 | 株式会社日立製作所 | 誤り訂正機能付半導体メモリ |
JPS6130059A (ja) * | 1984-07-20 | 1986-02-12 | Nec Corp | 半導体装置の製造方法 |
US4702936A (en) * | 1984-09-20 | 1987-10-27 | Applied Materials Japan, Inc. | Gas-phase growth process |
US4617160A (en) * | 1984-11-23 | 1986-10-14 | Irvine Sensors Corporation | Method for fabricating modules comprising uniformly stacked, aligned circuit-carrying layers |
DE3504714A1 (de) * | 1985-02-12 | 1986-08-14 | Siemens AG, 1000 Berlin und 8000 München | Lithografiegeraet zur erzeugung von mikrostrukturen |
US4618763A (en) | 1985-04-12 | 1986-10-21 | Grumman Aerospace Corporation | Infrared focal plane module with stacked IC module body |
NL8501773A (nl) * | 1985-06-20 | 1987-01-16 | Philips Nv | Werkwijze voor het vervaardigen van halfgeleiderinrichtingen. |
JPS629642A (ja) | 1985-07-05 | 1987-01-17 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
DE3527532A1 (de) | 1985-08-01 | 1987-02-12 | Teves Gmbh Alfred | Verfahren und bremsanlage zur vortriebsregelung |
JPS62155517A (ja) * | 1985-12-27 | 1987-07-10 | Canon Inc | パターン描画装置及び方法 |
NL8600087A (nl) * | 1986-01-17 | 1987-08-17 | Philips Nv | Inrichting voor vol-duplex datatransmissie over tweedraadsverbindingen. |
US4952446A (en) | 1986-02-10 | 1990-08-28 | Cornell Research Foundation, Inc. | Ultra-thin semiconductor membranes |
KR900008647B1 (ko) * | 1986-03-20 | 1990-11-26 | 후지쓰 가부시끼가이샤 | 3차원 집적회로와 그의 제조방법 |
US4706166A (en) * | 1986-04-25 | 1987-11-10 | Irvine Sensors Corporation | High-density electronic modules--process and product |
US4954875A (en) * | 1986-07-17 | 1990-09-04 | Laser Dynamics, Inc. | Semiconductor wafer array with electrically conductive compliant material |
US4897708A (en) * | 1986-07-17 | 1990-01-30 | Laser Dynamics, Inc. | Semiconductor wafer array |
US4810673A (en) * | 1986-09-18 | 1989-03-07 | Texas Instruments Incorporated | Oxide deposition method |
US4684436A (en) | 1986-10-29 | 1987-08-04 | International Business Machines Corp. | Method of simultaneously etching personality and select |
US4939694A (en) * | 1986-11-03 | 1990-07-03 | Hewlett-Packard Company | Defect tolerant self-testing self-repairing memory system |
US4892753A (en) * | 1986-12-19 | 1990-01-09 | Applied Materials, Inc. | Process for PECVD of silicon oxide using TEOS decomposition |
US5000113A (en) * | 1986-12-19 | 1991-03-19 | Applied Materials, Inc. | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
US4721938A (en) * | 1986-12-22 | 1988-01-26 | Delco Electronics Corporation | Process for forming a silicon pressure transducer |
JPS63186457A (ja) * | 1987-01-29 | 1988-08-02 | Hitachi Ltd | 半導体装置及びその製造方法 |
US5010024A (en) * | 1987-03-04 | 1991-04-23 | Advanced Micro Devices, Inc. | Passivation for integrated circuit structures |
US5110712A (en) * | 1987-06-12 | 1992-05-05 | Hewlett-Packard Company | Incorporation of dielectric layers in a semiconductor |
EP0304263A3 (en) * | 1987-08-17 | 1990-09-12 | Lsi Logic Corporation | Semiconductor chip assembly |
US4849857A (en) | 1987-10-05 | 1989-07-18 | Olin Corporation | Heat dissipating interconnect tape for use in tape automated bonding |
DE3787032T2 (de) * | 1987-10-20 | 1994-03-03 | Irvine Sensors Corp | Elektronische module hoher dichte, verfahren und erzeugnis. |
US4892842A (en) * | 1987-10-29 | 1990-01-09 | Tektronix, Inc. | Method of treating an integrated circuit |
FR2623013A1 (fr) | 1987-11-06 | 1989-05-12 | Commissariat Energie Atomique | Source d'electrons a cathodes emissives a micropointes et dispositif de visualisation par cathodoluminescence excitee par emission de champ,utilisant cette source |
US4825277A (en) * | 1987-11-17 | 1989-04-25 | Motorola Inc. | Trench isolation process and structure |
KR900002716B1 (ko) | 1987-11-26 | 1990-04-23 | 재단법인한국전자 통신연구소 | 레이져묘화기의 집광광학장치 |
US4784721A (en) * | 1988-02-22 | 1988-11-15 | Honeywell Inc. | Integrated thin-film diaphragm; backside etch |
GB2215914B (en) | 1988-03-17 | 1991-07-03 | Emi Plc Thorn | A microengineered diaphragm pressure switch and a method of manufacture thereof |
GB8810973D0 (en) | 1988-05-10 | 1988-06-15 | Stc Plc | Improvements in integrated circuits |
US5034685A (en) | 1988-05-16 | 1991-07-23 | Leedy Glenn J | Test device for testing integrated circuits |
US5020219A (en) | 1988-05-16 | 1991-06-04 | Leedy Glenn J | Method of making a flexible tester surface for testing integrated circuits |
US4994735A (en) * | 1988-05-16 | 1991-02-19 | Leedy Glenn J | Flexible tester surface for testing integrated circuits |
US5225771A (en) * | 1988-05-16 | 1993-07-06 | Dri Technology Corp. | Making and testing an integrated circuit using high density probe points |
US5512397A (en) * | 1988-05-16 | 1996-04-30 | Leedy; Glenn J. | Stepper scanner discretionary lithography and common mask discretionary lithography for integrated circuits |
US6288561B1 (en) * | 1988-05-16 | 2001-09-11 | Elm Technology Corporation | Method and apparatus for probing, testing, burn-in, repairing and programming of integrated circuits in a closed environment using a single apparatus |
US5323035A (en) | 1992-10-13 | 1994-06-21 | Glenn Leedy | Interconnection structure for integrated circuits and method for making same |
US5103557A (en) * | 1988-05-16 | 1992-04-14 | Leedy Glenn J | Making and testing an integrated circuit using high density probe points |
US4924589A (en) * | 1988-05-16 | 1990-05-15 | Leedy Glenn J | Method of making and testing an integrated circuit |
US4994336A (en) * | 1988-05-31 | 1991-02-19 | Siemens Aktiengesellschaft | Method for manufacturing a control plate for a lithographic device |
USRE34893E (en) * | 1988-06-08 | 1995-04-04 | Nippondenso Co., Ltd. | Semiconductor pressure sensor and method of manufacturing same |
US4966663A (en) | 1988-09-13 | 1990-10-30 | Nanostructures, Inc. | Method for forming a silicon membrane with controlled stress |
US5110373A (en) * | 1988-09-13 | 1992-05-05 | Nanostructures, Inc. | Silicon membrane with controlled stress |
US5008619A (en) * | 1988-11-18 | 1991-04-16 | Amp-Akzo Corporation | Multilevel circuit board precision positioning |
JPH02143466A (ja) | 1988-11-25 | 1990-06-01 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
DE68925879T2 (de) | 1988-12-21 | 1996-10-02 | At & T Corp | Thermisches Oxydierungsverfahren mit verändertem Wachstum für dünne Oxide |
US4950987A (en) | 1989-03-03 | 1990-08-21 | University Of North Carolina At Charlotte | Magneto-inductive sensor for performing tactile and proximity sensing |
US4857481A (en) | 1989-03-14 | 1989-08-15 | Motorola, Inc. | Method of fabricating airbridge metal interconnects |
JP2823276B2 (ja) * | 1989-03-18 | 1998-11-11 | 株式会社東芝 | X線マスクの製造方法および薄膜の内部応力制御装置 |
US4990462A (en) * | 1989-04-12 | 1991-02-05 | Advanced Micro Devices, Inc. | Method for coplanar integration of semiconductor ic devices |
JP2517410B2 (ja) * | 1989-05-15 | 1996-07-24 | 三菱電機株式会社 | 学習機能付集積回路装置 |
US5262341A (en) * | 1989-05-19 | 1993-11-16 | Fujitsu Limited | Blanking aperture array and charged particle beam exposure method |
DE69017095T2 (de) | 1989-05-19 | 1995-06-14 | Fujitsu Ltd | Anordnung von Strahlaustastungsblenden, Verfahren zur Herstellung derselben, Gerät und Verfahren zur Belichtung von mit einem Strahl geladenen Teilchen. |
US4928058A (en) * | 1989-05-23 | 1990-05-22 | The University Of Rochester | Electro-optic signal measurement |
US5051326A (en) | 1989-05-26 | 1991-09-24 | At&T Bell Laboratories | X-Ray lithography mask and devices made therewith |
US4919749A (en) * | 1989-05-26 | 1990-04-24 | Nanostructures, Inc. | Method for making high resolution silicon shadow masks |
US5471427A (en) * | 1989-06-05 | 1995-11-28 | Mitsubishi Denki Kabushiki Kaisha | Circuit for repairing defective bit in semiconductor memory device and repairing method |
US5070026A (en) * | 1989-06-26 | 1991-12-03 | Spire Corporation | Process of making a ferroelectric electronic component and product |
JPH0344067A (ja) * | 1989-07-11 | 1991-02-25 | Nec Corp | 半導体基板の積層方法 |
US5119164A (en) | 1989-07-25 | 1992-06-02 | Advanced Micro Devices, Inc. | Avoiding spin-on-glass cracking in high aspect ratio cavities |
US5071510A (en) * | 1989-09-22 | 1991-12-10 | Robert Bosch Gmbh | Process for anisotropic etching of silicon plates |
US5098865A (en) * | 1989-11-02 | 1992-03-24 | Machado Jose R | High step coverage silicon oxide thin films |
US5156909A (en) | 1989-11-28 | 1992-10-20 | Battelle Memorial Institute | Thick, low-stress films, and coated substrates formed therefrom, and methods for making same |
US5045921A (en) * | 1989-12-26 | 1991-09-03 | Motorola, Inc. | Pad array carrier IC device using flexible tape |
US5169805A (en) | 1990-01-29 | 1992-12-08 | International Business Machines Corporation | Method of resiliently mounting an integrated circuit chip to enable conformal heat dissipation |
KR920005798A (ko) * | 1990-04-18 | 1992-04-03 | 미타 가쓰시게 | 반도체 집적회로 |
US5116777A (en) * | 1990-04-30 | 1992-05-26 | Sgs-Thomson Microelectronics, Inc. | Method for fabricating semiconductor devices by use of an N+ buried layer for complete isolation |
ES2044735B1 (es) * | 1990-05-04 | 1994-08-01 | Chevron Research And Tecnology | Elementos de tanque de lastre para un buque de doble casco. |
JPH0442957A (ja) * | 1990-06-06 | 1992-02-13 | Matsushita Electron Corp | 半導体集積回路装置の製造方法 |
US5203731A (en) * | 1990-07-18 | 1993-04-20 | International Business Machines Corporation | Process and structure of an integrated vacuum microelectronic device |
JPH0498342A (ja) * | 1990-08-09 | 1992-03-31 | Mitsubishi Electric Corp | 半導体記憶装置 |
US5062689A (en) | 1990-08-21 | 1991-11-05 | Koehler Dale R | Electrostatically actuatable light modulating device |
FR2666173A1 (fr) * | 1990-08-21 | 1992-02-28 | Thomson Csf | Structure hybride d'interconnexion de circuits integres et procede de fabrication. |
JP2600018B2 (ja) * | 1990-09-29 | 1997-04-16 | 三菱電機株式会社 | 半導体記憶装置 |
JP2876773B2 (ja) * | 1990-10-22 | 1999-03-31 | セイコーエプソン株式会社 | プログラム命令語長可変型計算装置及びデータ処理装置 |
US5117282A (en) * | 1990-10-29 | 1992-05-26 | Harris Corporation | Stacked configuration for integrated circuit devices |
US5245227A (en) | 1990-11-02 | 1993-09-14 | Atmel Corporation | Versatile programmable logic cell for use in configurable logic arrays |
US5130894A (en) * | 1990-11-26 | 1992-07-14 | At&T Bell Laboratories | Three-dimensional circuit modules |
JP3071876B2 (ja) | 1991-01-08 | 2000-07-31 | 株式会社東芝 | X線マスク、その製造方法、及びこれを用いた露光方法 |
NL9100327A (nl) * | 1991-02-25 | 1992-09-16 | Philips Nv | Kathode. |
DE4106288C2 (de) | 1991-02-28 | 2001-05-31 | Bosch Gmbh Robert | Sensor zur Messung von Drücken oder Beschleunigungen |
US5111278A (en) * | 1991-03-27 | 1992-05-05 | Eichelberger Charles W | Three-dimensional multichip module systems |
FR2674593B1 (fr) | 1991-03-29 | 1993-05-07 | Valeo | Amortisseur de torsion comportant un preamortisseur a boitier avec pattes a crochets, notamment pour vehicule automobile. |
JPH04326757A (ja) * | 1991-04-26 | 1992-11-16 | Hitachi Ltd | 情報処理装置及びそれを用いた並列計算機システム |
EP0516866A1 (en) * | 1991-05-03 | 1992-12-09 | International Business Machines Corporation | Modular multilayer interwiring structure |
WO1992020833A1 (en) * | 1991-05-17 | 1992-11-26 | Lam Research Corporation | A PROCESS FOR DEPOSITING A SIOx FILM HAVING REDUCED INTRINSIC STRESS AND/OR REDUCED HYDROGEN CONTENT |
US5279865A (en) * | 1991-06-28 | 1994-01-18 | Digital Equipment Corporation | High throughput interlevel dielectric gap filling process |
JP2555811B2 (ja) * | 1991-09-10 | 1996-11-20 | 富士通株式会社 | 半導体チップのフリップチップ接合方法 |
US5202754A (en) * | 1991-09-13 | 1993-04-13 | International Business Machines Corporation | Three-dimensional multichip packages and methods of fabrication |
US5270261A (en) * | 1991-09-13 | 1993-12-14 | International Business Machines Corporation | Three dimensional multichip package methods of fabrication |
US6230233B1 (en) * | 1991-09-13 | 2001-05-08 | Sandisk Corporation | Wear leveling techniques for flash EEPROM systems |
FR2681472B1 (fr) * | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
US5151775A (en) | 1991-10-07 | 1992-09-29 | Tektronix, Inc. | Integrated circuit device having improved substrate capacitance isolation |
JPH05109977A (ja) * | 1991-10-18 | 1993-04-30 | Mitsubishi Electric Corp | 半導体装置 |
JPH05129423A (ja) * | 1991-10-30 | 1993-05-25 | Rohm Co Ltd | 半導体装置及びその製造方法 |
US5856695A (en) * | 1991-10-30 | 1999-01-05 | Harris Corporation | BiCMOS devices |
KR950001159B1 (ko) * | 1991-12-27 | 1995-02-11 | 삼성전자 주식회사 | 반도체 메모리장치의 박막트랜지스터 및 그 제조방법 |
US5284804A (en) * | 1991-12-31 | 1994-02-08 | Texas Instruments Incorporated | Global planarization process |
JPH05283607A (ja) * | 1992-02-03 | 1993-10-29 | Hitachi Ltd | 半導体集積回路装置及びそれを利用した計算機システム |
US5985693A (en) * | 1994-09-30 | 1999-11-16 | Elm Technology Corporation | High density three-dimensional IC interconnection |
US6714625B1 (en) * | 1992-04-08 | 2004-03-30 | Elm Technology Corporation | Lithography device for semiconductor circuit pattern generation |
US5236118A (en) * | 1992-05-12 | 1993-08-17 | The Regents Of The University Of California | Aligned wafer bonding |
US6017658A (en) * | 1992-05-13 | 2000-01-25 | The United States Of America As Represented By The Secretary Of The Navy | Lithographic mask and method for fabrication thereof |
US6355976B1 (en) * | 1992-05-14 | 2002-03-12 | Reveo, Inc | Three-dimensional packaging technology for multi-layered integrated circuits |
JP3544974B2 (ja) | 1992-05-15 | 2004-07-21 | イルビン センサーズ コーポレーション | 一体化積層体 |
US5273940A (en) * | 1992-06-15 | 1993-12-28 | Motorola, Inc. | Multiple chip package with thinned semiconductor chips |
US5489554A (en) | 1992-07-21 | 1996-02-06 | Hughes Aircraft Company | Method of making a 3-dimensional circuit assembly having electrical contacts that extend through the IC layer |
US5432999A (en) * | 1992-08-20 | 1995-07-18 | Capps; David F. | Integrated circuit lamination process |
US5374569A (en) * | 1992-09-21 | 1994-12-20 | Siliconix Incorporated | Method for forming a BiCDMOS |
US5324687A (en) * | 1992-10-16 | 1994-06-28 | General Electric Company | Method for thinning of integrated circuit chips for lightweight packaged electronic systems |
US5426072A (en) * | 1993-01-21 | 1995-06-20 | Hughes Aircraft Company | Process of manufacturing a three dimensional integrated circuit from stacked SOI wafers using a temporary silicon substrate |
IT1261411B (it) * | 1993-03-12 | 1996-05-23 | Texas Instruments Italia Spa | Metodo e circuiteria per l'uso di memorie aventi locazioni difettose erelativa apparecchiatura di produzione. |
WO1994026083A1 (en) * | 1993-04-23 | 1994-11-10 | Irvine Sensors Corporation | Electronic module comprising a stack of ic chips |
US5694588A (en) | 1993-05-07 | 1997-12-02 | Texas Instruments Incorporated | Apparatus and method for synchronizing data transfers in a single instruction multiple data processor |
US5385632A (en) * | 1993-06-25 | 1995-01-31 | At&T Laboratories | Method for manufacturing integrated semiconductor devices |
US5399505A (en) * | 1993-07-23 | 1995-03-21 | Motorola, Inc. | Method and apparatus for performing wafer level testing of integrated circuit dice |
FR2709020B1 (fr) * | 1993-08-13 | 1995-09-08 | Thomson Csf | Procédé d'interconnexion de pastilles semi-conductrices en trois dimensions, et composant en résultant. |
WO1995005676A1 (en) * | 1993-08-13 | 1995-02-23 | Irvine Sensors Corporation | Stack of ic chips as substitute for single ic chip |
US5502667A (en) * | 1993-09-13 | 1996-03-26 | International Business Machines Corporation | Integrated multichip memory module structure |
US5385909A (en) * | 1993-11-22 | 1995-01-31 | American Home Products Corporation | Heterocyclic esters of rapamycin |
JPH07176688A (ja) * | 1993-12-20 | 1995-07-14 | Mitsubishi Electric Corp | 半導体集積回路 |
JPH07230696A (ja) * | 1993-12-21 | 1995-08-29 | Toshiba Corp | 半導体記憶装置 |
US5457879A (en) * | 1994-01-04 | 1995-10-17 | Motorola, Inc. | Method of shaping inter-substrate plug and receptacles interconnects |
US5380681A (en) * | 1994-03-21 | 1995-01-10 | United Microelectronics Corporation | Three-dimensional multichip package and methods of fabricating |
US5480842A (en) * | 1994-04-11 | 1996-01-02 | At&T Corp. | Method for fabricating thin, strong, and flexible die for smart cards |
DE59510807D1 (de) | 1994-07-05 | 2003-11-20 | Infineon Technologies Ag | Verfahren zur herstellung einer dreidimensionalen schaltungsanordnung |
US5880010A (en) | 1994-07-12 | 1999-03-09 | Sun Microsystems, Inc. | Ultrathin electronics |
IT1274925B (it) * | 1994-09-21 | 1997-07-29 | Texas Instruments Italia Spa | Architettura di memoria per dischi a stato solido |
DE4433845A1 (de) * | 1994-09-22 | 1996-03-28 | Fraunhofer Ges Forschung | Verfahren zur Herstellung einer dreidimensionalen integrierten Schaltung |
DE4433833A1 (de) * | 1994-09-22 | 1996-03-28 | Fraunhofer Ges Forschung | Verfahren zur Herstellung einer dreidimensionalen integrierten Schaltung unter Erreichung hoher Systemausbeuten |
US5567654A (en) * | 1994-09-28 | 1996-10-22 | International Business Machines Corporation | Method and workpiece for connecting a thin layer to a monolithic electronic module's surface and associated module packaging |
JPH08134212A (ja) * | 1994-11-14 | 1996-05-28 | Hitachi Ltd | 配線構造体とその製造法 |
US5715144A (en) * | 1994-12-30 | 1998-02-03 | International Business Machines Corporation | Multi-layer, multi-chip pyramid and circuit board structure |
US5532955A (en) * | 1994-12-30 | 1996-07-02 | Mosaid Technologies Incorporated | Method of multilevel dram sense and restore |
US5534465A (en) * | 1995-01-10 | 1996-07-09 | At&T Corp. | Method for making multichip circuits using active semiconductor substrates |
US6107213A (en) * | 1996-02-01 | 2000-08-22 | Sony Corporation | Method for making thin film semiconductor |
US5703747A (en) * | 1995-02-22 | 1997-12-30 | Voldman; Steven Howard | Multichip semiconductor structures with interchip electrostatic discharge protection, and fabrication methods therefore |
US5733814A (en) * | 1995-04-03 | 1998-03-31 | Aptek Industries, Inc. | Flexible electronic card and method |
US5514628A (en) * | 1995-05-26 | 1996-05-07 | Texas Instruments Incorporated | Two-step sinter method utilized in conjunction with memory cell replacement by redundancies |
US5534466A (en) | 1995-06-01 | 1996-07-09 | International Business Machines Corporation | Method of making area direct transfer multilayer thin film structure |
US5764587A (en) * | 1995-06-07 | 1998-06-09 | International Business Machines Corporation | Static wordline redundancy memory device |
US6020257A (en) * | 1995-06-07 | 2000-02-01 | Elm Technology Corporation | Membrane dielectric isolation IC fabrication |
US5620915A (en) * | 1995-07-12 | 1997-04-15 | United Microelectronics Corporation | Method for bypassing null-code sections for read-only memory by access line control |
JPH09152979A (ja) * | 1995-09-28 | 1997-06-10 | Matsushita Electric Ind Co Ltd | 半導体装置 |
US5627112A (en) * | 1995-11-13 | 1997-05-06 | Rockwell International Corporation | Method of making suspended microstructures |
US5918794A (en) * | 1995-12-28 | 1999-07-06 | Lucent Technologies Inc. | Solder bonding of dense arrays of microminiature contact pads |
US6094733A (en) * | 1996-01-25 | 2000-07-25 | Kabushiki Kaisha Toshiba | Method for testing semiconductor memory devices, and apparatus and system for testing semiconductor memory devices |
KR0155081B1 (ko) * | 1996-04-08 | 1998-12-01 | 김광호 | 강제 멈춤 기능을 갖는 프린터 및 강제 멈춤 방법 |
US5719437A (en) * | 1996-04-19 | 1998-02-17 | Lucent Technologies Inc. | Smart cards having thin die |
US5882532A (en) * | 1996-05-31 | 1999-03-16 | Hewlett-Packard Company | Fabrication of single-crystal silicon structures using sacrificial-layer wafer bonding |
US5870176A (en) * | 1996-06-19 | 1999-02-09 | Sandia Corporation | Maskless lithography |
US5656552A (en) * | 1996-06-24 | 1997-08-12 | Hudak; John James | Method of making a thin conformal high-yielding multi-chip module |
US6027958A (en) * | 1996-07-11 | 2000-02-22 | Kopin Corporation | Transferred flexible integrated circuit |
US5760478A (en) * | 1996-08-20 | 1998-06-02 | International Business Machines Corporation | Clock skew minimization system and method for integrated circuits |
KR100377033B1 (ko) * | 1996-10-29 | 2003-03-26 | 트러시 테크날러지스 엘엘시 | Ic 및 그 제조방법 |
US5729896A (en) * | 1996-10-31 | 1998-03-24 | International Business Machines Corporation | Method for attaching a flip chip on flexible circuit carrier using chip with metallic cap on solder |
US6045625A (en) * | 1996-12-06 | 2000-04-04 | Texas Instruments Incorporated | Buried oxide with a thermal expansion matching layer for SOI |
JPH10209371A (ja) * | 1997-01-17 | 1998-08-07 | Mitsubishi Electric Corp | Icメモリ |
US6551857B2 (en) * | 1997-04-04 | 2003-04-22 | Elm Technology Corporation | Three dimensional structure integrated circuits |
US5915167A (en) * | 1997-04-04 | 1999-06-22 | Elm Technology Corporation | Three dimensional structure memory |
JP4032454B2 (ja) * | 1997-06-27 | 2008-01-16 | ソニー株式会社 | 三次元回路素子の製造方法 |
NO308149B1 (no) * | 1998-06-02 | 2000-07-31 | Thin Film Electronics Asa | Skalerbar, integrert databehandlingsinnretning |
JP4063944B2 (ja) * | 1998-03-13 | 2008-03-19 | 独立行政法人科学技術振興機構 | 3次元半導体集積回路装置の製造方法 |
JP4006081B2 (ja) * | 1998-03-19 | 2007-11-14 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
US6197456B1 (en) * | 1999-01-19 | 2001-03-06 | Lsi Logic Corporation | Mask having an arbitrary complex transmission function |
JP4413306B2 (ja) * | 1999-03-23 | 2010-02-10 | 株式会社東芝 | 半導体記憶装置 |
US6335491B1 (en) * | 2000-02-08 | 2002-01-01 | Lsi Logic Corporation | Interposer for semiconductor package assembly |
KR100408616B1 (ko) * | 2000-03-21 | 2003-12-03 | 미쓰비시덴키 가부시키가이샤 | 반도체 장치, 전자 기기의 제조 방법, 전자 기기 및 휴대정보 단말 |
US6236602B1 (en) * | 2000-05-25 | 2001-05-22 | Robert Patti | Dynamic configuration of storage arrays |
JP4635333B2 (ja) * | 2000-12-14 | 2011-02-23 | ソニー株式会社 | 半導体装置の製造方法 |
KR20030018642A (ko) * | 2001-08-30 | 2003-03-06 | 주식회사 하이닉스반도체 | 스택 칩 모듈 |
US6914324B2 (en) * | 2001-10-26 | 2005-07-05 | Staktek Group L.P. | Memory expansion and chip scale stacking system and method |
AU2003255254A1 (en) * | 2002-08-08 | 2004-02-25 | Glenn J. Leedy | Vertical system integration |
-
1997
- 1997-04-04 US US08/835,190 patent/US5915167A/en not_active Expired - Lifetime
- 1997-11-17 US US08/971,565 patent/US6133640A/en not_active Expired - Lifetime
- 1997-11-17 US US08/971,367 patent/US6208545B1/en not_active Expired - Lifetime
-
1998
- 1998-04-03 KR KR1020067012803A patent/KR100711820B1/ko active IP Right Grant
- 1998-04-03 CN CN2007101808311A patent/CN101188235B/zh not_active Expired - Fee Related
- 1998-04-03 KR KR1020057018170A patent/KR100785821B1/ko not_active IP Right Cessation
- 1998-04-03 EP EP20080006005 patent/EP1986233A3/en not_active Withdrawn
- 1998-04-03 JP JP54303198A patent/JP2002516033A/ja not_active Withdrawn
- 1998-04-03 CN CN201010284280.5A patent/CN102005453B/zh not_active Expired - Fee Related
- 1998-04-03 CN CN2003101026369A patent/CN1525485B/zh not_active Expired - Fee Related
- 1998-04-03 CN CNB2003101043970A patent/CN100409425C/zh not_active Expired - Fee Related
- 1998-04-03 CN CNB988038366A patent/CN1155050C/zh not_active Expired - Fee Related
- 1998-04-03 KR KR1019997009061A patent/KR100639752B1/ko not_active IP Right Cessation
- 1998-04-03 WO PCT/US1998/006861 patent/WO1998045130A1/en not_active Application Discontinuation
- 1998-04-03 EP EP98914558A patent/EP0975472A4/en not_active Withdrawn
- 1998-04-03 TW TW087105110A patent/TW412854B/zh not_active IP Right Cessation
- 1998-04-03 EP EP10011319.0A patent/EP2276035A3/en not_active Withdrawn
-
2000
- 2000-06-30 US US09/607,363 patent/US6632706B1/en not_active Expired - Lifetime
-
2003
- 2003-07-03 US US10/614,067 patent/US7193239B2/en not_active Expired - Lifetime
-
2007
- 2007-08-13 JP JP2007211038A patent/JP5207684B2/ja not_active Expired - Fee Related
-
2008
- 2008-01-23 JP JP2008013189A patent/JP5468739B2/ja not_active Expired - Fee Related
- 2008-01-23 JP JP2008013190A patent/JP2008172254A/ja active Pending
- 2008-01-23 JP JP2008013188A patent/JP5207747B2/ja not_active Expired - Fee Related
- 2008-11-10 US US12/268,386 patent/US20090067210A1/en not_active Abandoned
-
2011
- 2011-05-27 JP JP2011119212A patent/JP5690215B2/ja not_active Expired - Fee Related
Patent Citations (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5837948A (ja) * | 1981-08-31 | 1983-03-05 | Toshiba Corp | 積層半導体記憶装置 |
JPS58139449A (ja) * | 1982-02-15 | 1983-08-18 | Fujitsu Ltd | 垂直信号線を有する多層集積回路 |
JPS62190744A (ja) * | 1986-02-18 | 1987-08-20 | Agency Of Ind Science & Technol | 垂直配線構造 |
JPS62208665A (ja) * | 1986-03-07 | 1987-09-12 | Mitsubishi Electric Corp | 積層形半導体記憶装置 |
JPS62239400A (ja) * | 1986-04-08 | 1987-10-20 | Nec Corp | ランダムアクセスメモリ |
JPS62259285A (ja) * | 1986-05-06 | 1987-11-11 | Mitsubishi Electric Corp | 記憶装置のアドレス指定方式 |
JPS62272556A (ja) * | 1986-05-20 | 1987-11-26 | Fujitsu Ltd | 三次元半導体集積回路装置及びその製造方法 |
JPS63149900A (ja) * | 1986-12-15 | 1988-06-22 | Toshiba Corp | 半導体メモリ |
JPS63213943A (ja) * | 1987-03-03 | 1988-09-06 | Sharp Corp | 三次元半導体集積回路の製造方法 |
JPH01268151A (ja) * | 1988-04-20 | 1989-10-25 | Sharp Corp | 半導体装置 |
JPH02256264A (ja) * | 1988-12-23 | 1990-10-17 | Matsushita Electric Ind Co Ltd | 積層集積回路 |
JPH02178960A (ja) * | 1988-12-29 | 1990-07-11 | Sharp Corp | 神経回路装置 |
JPH02195598A (ja) * | 1989-01-25 | 1990-08-02 | Hitachi Ltd | 半導体記憶装置 |
JPH02239627A (ja) * | 1989-03-13 | 1990-09-21 | Fuji Electric Co Ltd | 半導体チップの電極形成方法 |
JPH02239652A (ja) * | 1989-03-14 | 1990-09-21 | Toshiba Corp | 半導体装置 |
JPH0366161A (ja) * | 1989-08-04 | 1991-03-20 | Olympus Optical Co Ltd | 三次元集積メモリ |
JPH03175664A (ja) * | 1989-12-04 | 1991-07-30 | Sharp Corp | 半導体装置 |
JPH03225696A (ja) * | 1990-01-30 | 1991-10-04 | Sharp Corp | 半導体記憶装置 |
JPH04228196A (ja) * | 1990-04-18 | 1992-08-18 | Hitachi Ltd | 半導体集積回路 |
WO1991016656A1 (en) * | 1990-04-24 | 1991-10-31 | Seiko Epson Corporation | Semiconductor device provided with circuit cell and array, and data input-output device |
JPH0410649A (ja) * | 1990-04-27 | 1992-01-14 | Shimadzu Corp | 3次元実装用半導体基板の製造方法 |
JPH04195995A (ja) * | 1990-11-28 | 1992-07-15 | Toshiba Corp | 半導体記憶装置 |
JPH04356956A (ja) * | 1991-06-03 | 1992-12-10 | Sharp Corp | 半導体装置及びその製造方法 |
JPH05167007A (ja) * | 1991-12-13 | 1993-07-02 | Sony Corp | 半導体装置とその製造方法 |
JPH07504782A (ja) * | 1992-02-13 | 1995-05-25 | コピン・コーポレーシヨン | 高密度電子回路モジュール |
JPH05250900A (ja) * | 1992-03-09 | 1993-09-28 | Mitsubishi Electric Corp | テスト機能付き半導体集積回路 |
JPH07508614A (ja) * | 1992-04-08 | 1995-09-21 | リーディ,グレン・ジェイ | 膜絶縁層分離ic製造 |
JPH08504060A (ja) * | 1992-12-03 | 1996-04-30 | イルビン センサーズ コーポレーション | Icマイクロプロセッサ用で、構造的にicマイクロプロセッサに組み合わされたicメモリー積層を含むモジュール |
JPH06251172A (ja) * | 1993-02-26 | 1994-09-09 | Hitachi Ltd | 半導体集積回路システム装置 |
JPH06291250A (ja) * | 1993-04-06 | 1994-10-18 | Nec Corp | 半導体集積回路およびその形成方法 |
WO1995009438A1 (en) * | 1993-09-30 | 1995-04-06 | Kopin Corporation | Three-dimensional processor using transferred thin film circuits |
JPH09503622A (ja) * | 1993-09-30 | 1997-04-08 | コピン・コーポレーシヨン | 転写薄膜回路を使用した3次元プロセッサー |
JPH0883883A (ja) * | 1994-06-16 | 1996-03-26 | Internatl Business Mach Corp <Ibm> | 薄膜フローティング・ゲート・アモルファス・トランジスタを利用する不揮発性並直列変換器システム |
JPH08264712A (ja) * | 1995-03-27 | 1996-10-11 | Matsushita Electron Corp | 半導体装置 |
JPH0945871A (ja) * | 1995-08-03 | 1997-02-14 | Sharp Corp | 半導体記憶装置及びその製造方法 |
JPH0992781A (ja) * | 1995-09-22 | 1997-04-04 | Internatl Business Mach Corp <Ibm> | 統合した回路を有するマルチチップ半導体構造およびその製造方法 |
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5690215B2 (ja) | 積層型集積回路メモリ | |
US8791581B2 (en) | Three dimensional structure memory |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110616 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20121217 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130116 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20130207 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130416 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130514 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20130813 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130816 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20140610 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140829 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20140910 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20141125 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20141226 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150127 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150130 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5690215 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |