TW201322332A - 透過介穩氫終止之矽的選擇性蝕刻 - Google Patents

透過介穩氫終止之矽的選擇性蝕刻 Download PDF

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TW201322332A
TW201322332A TW101136928A TW101136928A TW201322332A TW 201322332 A TW201322332 A TW 201322332A TW 101136928 A TW101136928 A TW 101136928A TW 101136928 A TW101136928 A TW 101136928A TW 201322332 A TW201322332 A TW 201322332A
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substrate processing
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An-Chuan Wang
jing-chun Zhang
Nitin K Ingle
Young S Lee
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Applied Materials Inc
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Abstract

描述蝕刻圖案化之非均相結構上之暴露矽的方法，且方法包括自含氟前驅物與含氫前驅物形成之遠端電漿蝕刻。將來自遠端電漿之電漿流出物流入基板製程區中，電漿流出物在基板製程區中與矽之暴露區反應。電漿流出物與圖案化之非均相結構反應，以選擇性移除矽同時非常緩慢地移除其他暴露材料。矽的選擇性部分是因為含氫前驅物在遠端電漿中的數量優勢，此數量優勢氫終止圖案化之非均相結構上之表面。含氟前驅物的低很多流動逐漸以氟取代氫終止矽上之氫，藉此自矽之暴露區選擇性移除矽。矽的選擇性亦源自位於遠端電漿與基板製程區之間的離子抑制器的存在。離子抑制器降低或實質上排除到達基板之離子性帶電物種的數目。方法亦可用來在遠快於氧化矽、氮化矽與多種含金屬材料下選擇性移除矽。

Description

透過介穩氫終止之矽的選擇性蝕刻 【相關申請案的交互參照】
本申請案主張2011年10月7日申請且標題為「SELECTIVE ETCH OF SILICON BY WAY OF METASTABLE HYDROGEN TERMINATION」之美國專利臨時申請案第61/544,747號的利益，將上述申請案以參考資料併入本文中以用於所有目的。
本申請案關於半導體製程技術。
可能藉由產生錯綜複雜圖案化之材料層於基板表面的製程來製造積體電路。產生圖案化之材料於基板上需要用於移除暴露材料之受控制方法。化學蝕刻用於多種目的，多種目的包括轉移光阻劑中之圖案進入下層、薄化層或薄化已經存在於表面上之特徵結構的側向尺寸。通常，期望具有比另一材料更快地蝕刻一材料之蝕刻製程，如此有助於例如圖案轉移製程進行。將上述蝕刻製程稱為對第一材料具選擇性。由於材料、電路與製程的多樣性，已經發展出針對多種材料具選擇性的蝕刻製程。然而，少有選擇可比矽更快地選擇性蝕刻氮化矽。
通常期望乾蝕刻製程自半導體基板選擇性移除材料。期望源自於自微型結構平緩地移除材料且具有最小的物 理擾亂的能力。乾蝕刻製程亦允許藉由移除氣相反應劑而突然地終止蝕刻速率。某些乾蝕刻製程包括暴露基板至由一或多個前驅物形成之遠端電漿副產物。舉例而言，三氟化氮之遠端電漿產生搭配離子抑制技術可在將電漿流出物流入基板製程區時自圖案化之基板選擇性移除矽。然而，有時需要甚至更高的矽選擇性以用於某些應用，舉例而言，在可形成工作閘極之前聚矽之「假」閘極的移除。
需要方法來相對於氧化矽、氮化矽與其他材料提高矽選擇性以用於乾蝕刻製程。
描述蝕刻圖案化之非均相結構上之暴露矽的方法，且方法包括自含氟前驅物與含氫前驅物形成之遠端電漿蝕刻。將來自遠端電漿之電漿流出物流入基板製程區中，電漿流出物在基板製程區中與矽之暴露區反應。電漿流出物與圖案化之非均相結構反應，以選擇性移除矽同時非常緩慢地移除其他暴露材料。矽的選擇性部分是因為含氫前驅物在遠端電漿中的數量優勢，此數量優勢氫終止圖案化之非均相結構上之表面。含氟前驅物的低很多流動逐漸以氟取代氫終止矽上之氫，藉此自矽之暴露區選擇性移除矽。矽的選擇性亦源自位於遠端電漿與基板製程區之間的離子抑制器的存在。離子抑制器降低或實 質上排除到達基板之離子性帶電物種的數目。方法亦可用來在遠快於氧化矽、氮化矽與多種含金屬材料下選擇性移除矽。
本發明之實施例包括在基板製程腔室之基板製程區中蝕刻圖案化之基板的方法。圖案化之基板具有暴露矽。方法包括流動各個含氟前驅物與含氫前驅物進入遠端電漿區，同時在遠端電漿區中形成遠端電漿以產生電漿流出物，遠端電漿區流體耦接至基板製程區。前驅物的原子流比例大於或約為25：1的H：F，且在遠端電漿區中形成遠端電漿以產生電漿流出物的步驟包括施加約10瓦與約2000瓦之間的RF功率至電漿區。方法更包括藉由流動電漿流出物通過噴頭中之通孔進入基板製程區來蝕刻暴露矽。蝕刻操作過程中，圖案化之基板的溫度大於或約為0℃，且基板製程區中的壓力高於或約為0.05托且低於或約為10托。
在後續描述中提出額外實施例與特徵結構的部分，且彼等熟悉技術人士在查看本說明書後可得知額外實施例與特徵結構的部分或藉由實施揭露實施例可學習額外實施例與特徵結構的部分。可藉由本說明書描述之儀器設備、組合及方法理解與達成揭露實施例的特徵結構與優點。
描述蝕刻圖案化之非均相結構上之暴露矽的方法，且方法包括自含氟前驅物與含氫前驅物形成之遠端電漿蝕刻。將來自遠端電漿之電漿流出物流入基板製程區中，電漿流出物在基板製程區中與矽之暴露區反應。電漿流出物與圖案化之非均相結構反應，以選擇性移除矽同時非常緩慢地移除其他暴露材料。矽的選擇性部分是因為含氫前驅物在遠端電漿中的數量優勢，此數量優勢氫終止圖案化之非均相結構上之表面。含氟前驅物的低很多流動逐漸以氟取代氫終止矽上之氫，藉此自矽之暴露區選擇性移除矽。矽的選擇性亦源自位於遠端電漿與基板製程區之間的離子抑制器的存在。離子抑制器降低或實質上排除到達基板之離子性帶電物種的數目。方法亦可用來在遠快於氧化矽、氮化矽與多種含金屬材料下選擇性移除矽。
SiconiTM蝕刻製程已經應用例如氨(NH3)之氫源與例如三氟化氮(NF3)之氟源，該氫源與氟源一起流過遠端電漿系統(RPS)且進入反應區。氨氣與三氟化氮的流動速率一般是經過選擇以使得氫的原子流動速率大致上是氟的原子流動速率的兩倍，以有效地利用該兩種製程氣體成份。氫與氟的存在使得(NH4)2SiF6之固體副產物得以在相對低的基板溫度下形成。藉由將基板溫度升高至昇華溫度之上而移除固體副產物。SiconiTM蝕刻製程移除氧化矽比移除矽快得多。發明人已經發現可藉由提高氫：氟的原子流比例來反轉選擇性。不將申請專利範圍 的覆蓋範圍侷限於可能完全正確或可能非完全正確的假設機制，發明人假設氫游離基團的優勢數量維持穩定氫終止於廣泛的暴露材料陣列上。暴露至氫游離基團亦氫終止矽表面，然而，較低密度的氟游離基團破壞Si-H鍵以形成Si-F鍵，直到揮發性SiFx物種自表面釋放且自基板製程區排出為止。釋放後留下的開放鍵結位置快速地由氫終止並繼續製程。
為了較佳地瞭解與理解本發明，現參照第1圖，第1圖是根據揭露實施例之矽選擇性蝕刻製程的流程圖。矽可為非晶、結晶或多晶的(在此實例中通常稱為聚矽)。在第一操作之前，在圖案化之基板中形成結構。結構具有分隔的矽與氧化矽暴露區。接著將基板輸送進入製程區(操作110)。
將氫(H2)流入與基板製程區分隔的電漿區中(操作120)。在本文中可將分隔的電漿區稱為遠端電漿區，且遠端電漿區可位在與製程腔室不同之模組中或製程腔室中之隔室中。一般而言，可將含氫前驅物流入電漿區中，且含氧前驅物可包括選自H2、NH3、碳氫化合物等等的至少一個前驅物。亦可將三氟化氮之流動導入遠端電漿區中(操作125)，三氟化氮與氫一起在遠端電漿區中同時於電漿中激發。三氟化氮之流動速率低於氫之流動速率，以造成簡短地量化成高原子流比例H：F。亦可應用其他的氟源來增強或替代三氟化氮。一般而言，可將含氟前驅物流入遠端電漿區中，而含氟前驅物包括選自氟 原子、雙原子氟、三氟化溴、三氟化氯、三氟化氮、氟化氫、氟化碳氫化合物、六氟化硫與二氟化氙所構成之群組的至少一個前驅物。
接著將遠端電漿區中形成之電漿流出物流入基板製程區中(操作130)。選擇性蝕刻圖案化之基板(操作135)，以致在比暴露氧化矽大至少或約七十倍的速率下移除暴露矽。本發明包括維持高原子流比例的氫(H)與氟(F)以達成矽的高蝕刻選擇性。某些前驅物可包含氟與氫兩者，在此實例中，在計算本文所述之原子流比例時包括所有貢獻的原子流動速率。氫的優勢數量有助於氫終止圖案化之基板上之暴露表面。在本文所述之條件下，氫終止僅在矽表面上是介穩的。來自三氟化氮或其他含氟前驅物的氟替代矽表面上之氫並產生揮發性殘餘物，揮發性殘餘物離開表面並帶走矽。由於其他暴露材料中存在的強鍵結能量，氟無法替代其他氫終止表面的氫(及/或無法產生揮發性殘餘物以移除其他暴露材料)。在一實施例中，氣體流動比例(H2：NF3)大於或約為15：1，或氣體流動比例(H2：NF3)籠統地大於或約為10：1之間的原子流比例，且發現此比例可達成大於或約為70：1的蝕刻選擇性(矽：氧化矽或者矽：氮化矽)。在揭露實施例中，蝕刻選擇性(矽：氧化矽或者矽：氮化矽)亦可大於或約為100：1、大於或約為150：1、大於或約為200：1、大於或約為250：1或大於或約為300：1。鎢或氮化鈦的暴露區亦可存在於圖案化之基板上並且該等暴露區 可稱為暴露金屬區。在揭露實施例中，蝕刻選擇性(矽：暴露金屬區)可大於或約為100：1、大於或約為150：1、大於或約為200：1、大於或約為250：1、大於或約為500：1、大於或約為1000：1、大於或約為2000：1或大於或約為3000：1。自基板製程區移除反應性化學物種，並接著自製程區移除基板(操作145)。
如本文所述，高流動的含氫前驅物之存在於大部分製程過程中確保矽、氧化矽與氮化矽維持氫終止表面。含氟前驅物及/或含氫前驅物可更包括一或多個相對惰性氣體(諸如，He、N2、Ar等等)。惰性氣體可被用來改良電漿穩定性及/或攜帶液體前驅物至遠端電漿區。不同氣體的流動速率與比例可被用來控制蝕刻速率與蝕刻選擇性。在實施例中，含氟氣體包括流動速率約1 sccm(每分鐘標準立方公分)與30 sccm之間的NF3、流動速率約500 sccm與5,000 sccm之間的H2、流動速率約0 sccm與3000 sccm之間的He與流動速率約0 sccm與3000 sccm之間的Ar。熟悉技術人士理解可取決於多種因素來應用其他的氣體及/或流動，多種因素包括製程腔室設置、基板尺寸、接受蝕刻之特徵結構的幾何形狀與佈局等等。在揭露實施例中，含氟氣體之流動速率可低於或約為30 sccm、低於或約為20 sccm、低於或約為15 sccm或低於或約為10 sccm。含氟氣體的較低流動速率通常將提高矽的選擇性。在揭露實施例中，含氫氣體之流動速率可大於或約為300 sccm、大於或約為500 sccm、大於 或約為1000 sccm或大於或約為2000 sccm。提高含氫氣體之流動速率通常提高矽的選擇性。應維持高的H：F原子流比例以降低或排除固體殘餘物形成於氧化矽上。固體殘餘物的形成消耗某些氧化矽，此舉降低蝕刻製程之矽選擇性。在本發明之實施例中，H：F的原子流比例大於或約為25(即，25：1)、大於或約為30：1或大於或約為40：1。
方法亦包括當含氟前驅物與含氫前驅物在遠端電漿區中時施加能量至含氟前驅物與含氫前驅物以產生電漿流出物。熟悉技術人士將理解電漿可包括多種帶電物種與中性物種(包括游離基團與離子)。可利用習知技術(諸如，RF、電容耦合、感應耦合等等)來產生電漿。在實施例中，在約10瓦與2000瓦之間的源功率以及約0.2托與5托之間的壓力下，利用電容耦合電漿單元來施加電漿功率。可將電容耦合電漿單元配置在製程腔室之氣體反應區的遠端。舉例而言，可藉由離子抑制器將電容耦合電漿單元與電漿產生區分隔於氣體反應區。
在本發明之實施例中，在自遠端電漿區轉至基板製程區的過程中，離子抑制器可被用來自電漿流出物過濾離子。離子抑制器用來減少或排除自電漿產生區行進至基板之離子性帶電物種。未帶電中性物種與游離基團物種可通過離子抑制器中之開口而到達基板。應當注意完全移除圍繞基板之反應區中之離子性帶電物種並非一直是期望目標。在許多實例中，需要離子性物種到達基板以 執行蝕刻及/或沉積製程。在該等實例中，離子抑制器有助於控制反應區中之離子性物種的濃度處在幫助製程的水平下。
根據本發明之某些實施例，在示範性裝置段落中描述之離子抑制器可被用來提供游離基團及/或中性物種以選擇性蝕刻基板。在一實施例中，舉例而言，離子抑制器被用來提供含氟與氫之電漿流出物以選擇性蝕刻矽。利用電漿流出物，可達成超過70的矽：氧化矽(或氮化矽)之蝕刻速率選擇性。離子抑制器可被用來提供游離基團濃度高於離子的反應性氣體。由於電漿的大部分帶電粒子由離子抑制器所過濾或移除，便無必須在蝕刻製程過程中偏壓基板。相較於包括濺射與轟擊之傳統電漿蝕刻製程而言，上述利用游離基團與其他中性物種之製程可降低電漿損傷。本發明之實施例亦優於傳統的濕蝕刻製程，在傳統的濕蝕刻製程中，液體的表面張力會造成小特徵結構的彎曲與剝落。
將氧化矽、矽與氮化矽的空白(blanket)晶圓用來量化示範性製程之蝕刻速率。自三氟化氮、氫(H2)、氦與氬形成遠端電漿，且流出物在分隔的製程中蝕刻三個膜的各個空白晶圓。針對約400埃/分的蝕刻速率，蝕刻製程移除矽的速率約為移除氧化矽的速率的兩百倍且蝕刻製程移除矽的速率超出移除氮化矽的速率的兩百倍。在分隔的實驗中，針對約200埃/分的蝕刻速率，蝕刻製程移除矽的速率約為移除氧化矽的速率的五百倍且蝕刻製程 移除矽的速率超出移除氮化矽的速率的五百倍。在揭露之實施例中，氧化矽之蝕刻速率可大於或約為100埃/分、大於或約為200埃/分或大於或約為300埃/分。選擇性、非本地電漿、受控制之離子濃度與固體副產物的缺少，各自使得該等蝕刻製程良好地適用於精細地移除或微調矽結構，而移除極少氧化矽或沒有移除氧化矽以及移除極少氮化矽或沒有移除氮化矽。
在蝕刻製程過程中，基板之溫度大於0℃。基板溫度可大於或約為20℃且低於或約為300℃。在此基板溫度範圍的高端，矽蝕刻速率下降。在此基板溫度範圍的低端，氧化矽與氮化矽開始蝕刻並因此選擇性下降。在揭露實施例中，本文所述之蝕刻過程中，基板之溫度可大於或約為30℃且同時低於或約為200℃或者基板之溫度可大於或約為40℃且同時低於或約為150℃。在揭露實施例中，基板溫度可低於100℃、低於或約為80℃、低於或約為65℃或低於或約為50℃。
資料進一步顯示作為製程壓力之函數的矽蝕刻速率中的提高(針對已知氫：氟原子比例)。然而，對約50：1的H：F原子流動速率比例而言，提高壓力高於1托開始降低選擇性。懷疑如此是因為組合兩個或兩個以上含氟流出物的較高可能性所致。蝕刻製程接著開始移除氧化矽、氮化矽與其他材料。在揭露實施例中，基板製程區中之壓力可低於或約為10托、低於或約為5托、低於或約為3托、低於或約為2托、低於或約為1托或低於 或約為750毫托。在本發明之實施例中，為了確保適當的蝕刻速率，壓力可高於或約為0.05托、高於或約為0.1托、高於或約為0.2托或高於或約為0.4托。可將壓力的任何上限與下限組合以形成額外的實施例。施加至遠端電漿區之電漿功率可為多種頻率或多個頻率的組合。在不同實施例中，RF功率可在約10瓦與約2000瓦之間、約200瓦與約1800瓦之間或約750瓦與約1500瓦之間。在不同實施例中，示範性製程系統中施加的RF頻率可為低於約500 kHz的低RF頻率、約10 MHz與約15 MHz之間的高RF頻率或大於或約為1 GHz的微波頻率。
在實施例中，可應用預處置移除暴露矽區之表面上的薄氧化物層。在蝕刻暴露矽之操作之前進行預處置。當暴露矽至大氣條件下時經常形成薄氧化物層。部分因為本文所報導之製程的選擇性如此高，薄氧化物層可使得矽區表現更像氧化矽區。通常將薄氧化矽層稱為「原生」氧化物，並可利用熟悉技術人士所習知的多種製程來移除原生氧化物。舉例而言，SiconiTM蝕刻可被用來移除原生氧化物。換句話說，可在遠端電漿區中組合含氟前驅物與含氫前驅物並在電漿中激發含氟前驅物與含氫前驅物。在預處置SiconiTM過程中的H：F原子流比例可在約0.5：1與約8：1之間，以確保固體副產物產生於暴露矽表面上。在本發明之實施例中，在該等固體副產物的生產過程中消耗原生氧化物。SiconiTM蝕刻過程中之圖案化之基板的溫度可低於固體副產物的昇華溫度。 可在固體副產物之形成後，將圖案化之基板的溫度提高高於昇華溫度以移除固體副產物。昇華作用完成自暴露矽移除原生氧化物。
或者，可藉由基板製程區中形成之氫電漿移除原生氧化物。在實施例中，可藉由施加高於或約為200瓦且低於或約為3000瓦或者高於或約為300瓦且低於或約為2000瓦的本地電漿功率來產生本地預處置電漿。不論使用的方法為何，在蝕刻暴露矽之操作之前移除原生氧化物(若存在的話)。可在用於選擇性蝕刻矽之相同基板製程區中執行移除原生氧化物的技術，或者可在分隔的腔室中各自執行該等製程。然而，在分隔的腔室之間傳送過程中，圖案化之基板不應暴露至濕氣或大氣環境。亦應注意，不論是否存在有原生氧化物，將於本文中應用「暴露矽區」與「暴露矽」之用語。
在實施例中，可應用後處置來避免在已經蝕刻基板且暴露基板至大氣條件後形成殘餘物。假設圖案化之基板的表面上的殘餘氟與來自大氣的濕氣反應而形成少量的氫氟酸(HF)。此舉會造成矽、鈦或其他化合物的殘餘物形成於表面上。後處置發生於蝕刻暴露矽之操作之後。被認為可移除殘餘氟之一處置包括流動N2、Ar、He、NO2、N2O、H2、NH3、O2或CH4的至少一者進入基板製程區，同時藉由施加高於或約為100瓦且低於或約為2000瓦或3000瓦的本地電漿功率來形成本地電漿。可交替地將N2、Ar、He、NO2、N2O、H2、NH3、O2或CH4 的至少一者流過遠端電漿區與施加電漿功率(在100瓦與2000瓦或3000瓦之間)。接著可將電漿流出物流入基板製程區以自圖案化之基板的暴露矽區移除殘餘氟。在本發明之實施例中，一額外的後處置包括簡單地加熱基板至200℃與約600℃之間或約300℃與約600℃之間以釋出殘餘氟。可單獨應用該等後處置的任一者或搭配其餘後處置的任一者或所有以自暴露矽區移除殘餘氟。
在描述示範性製程腔室與系統的過程中揭露額外製程參數。
示範性製程系統
可實施本發明實施例的製程腔室可被納入製程平台內，該等製程平台諸如可購自美國加州聖克拉拉市的應用材料公司的CENTURA®及PRODUCER®系統。可與本發明之示範性方法一併使用的基板製程腔室的實例可包括顯示於及描述於共同讓渡給Lubomirsky等人的美國臨時專利申請案第60/803,499號中的彼等腔室，該案於2006年5月30日提出申請，且標題為「PROCESS CHAMBER FOR DIELECTRIC GAPFILL」，該案全文在此併入作為參考以用於所有目的。額外的示範性系統可包括顯示於及描述於美國專利第6,387,207號與第6,830,624號中的彼等系統，該等專利之全文亦在此併入作為參考以用於所有目的。
第2A圖是根據所揭示的實施例之基板製程腔室200。遠端電漿系統210可處理含氟前驅物，隨後含氟前驅物 行進穿過氣體入口組件211。在氣體入口組件211中可見兩個個別的氣體供給通道。第一通道212搭載穿過遠端電漿系統210(RPS)的氣體，而第二通道213繞過遠端電漿系統210。在實施例中，任一通道皆可用於含氟前驅物。另一方面，第一通道212可用於製程氣體而第二通道213可用於處置氣體(treatment gas)。圖中圖示蓋(或導電的頂部部分)221以及穿孔隔件253之間有絕緣環224，該絕緣環使得AC電位得以相對於穿孔隔件253施加到蓋221。AC電位在腔室電漿區220中點燃電漿。製程氣體可行進穿過第一通道212進入腔室電漿區220，且製程氣體可單獨由腔室電漿區220中(或者與遠端電漿系統210相結合)的電漿所激發。倘若製程氣體(含氟前驅物)流經第二通道213，則隨後僅有腔室電漿區220用於激發。腔室電漿區220及/或遠端電漿系統210的結合可稱為本文中的遠端電漿系統。穿孔隔件(亦指噴頭)253將噴頭253下方的基板製程區270與腔室電漿區220分隔。噴頭253使電漿得以存在於腔室電漿區220中，以避免直接於基板製程區270中激發氣體，同時依然使激發的物種得以從腔室電漿區220行進至基板製程區270。
噴頭253定位在腔室電漿區220與基板製程區270之間，且噴頭253使在遠端電漿系統210及/或腔室電漿區220中生成之電漿流出物(前驅物或其他氣體的受激發的衍生物)穿過複數個橫切板厚的通孔256。噴頭253 亦具有一或多個中空空間251，該空間可被蒸氣或氣態形式的前驅物(諸如含矽前驅物)填滿，並且該空間穿過小孔洞255進入基板製程區270但該空間不直接進入腔室電漿區220。在此揭示的實施例中，噴頭253比通孔256的最小直徑250的長度還厚。為了維持從腔室電漿區220穿透至基板製程區270的受激發物種具顯著濃度，可透過形成通孔256之較大的直徑部分使該較大的直徑部分穿過噴頭253達某一程度(part way)，而限制通孔最小直徑250的長度226。在所揭示的實施例中，通孔256的最小直徑250之長度可與通孔256的最小直徑相同數量級，或者該長度可為較小的數量級。
如第2A圖中所示，噴頭253可設以作為離子抑制器。或者，可包括抑制行進進入基板製程區270中之離子濃度的分隔製程腔室元件(未圖示)。蓋221與噴頭253可分別作為第一電極與第二電極，以致蓋221與噴頭253可接收不同的電壓。在該等配置中，可將電功率(例如，RF功率)施加至蓋221、噴頭253或兩者。舉例而言，可將電功率施加至蓋221同時將噴頭253(作為離子抑制器)接地。基板製程系統可包括RF產生器，RF產生器提供電功率至蓋及/或噴頭253。施加至蓋221之電壓可促進腔室電漿區220中的電漿之均勻分佈(即，降低局部化電漿)。為了在腔室電漿區220中形成電漿，絕緣環224可電絕緣蓋221與噴頭253。絕緣環224可由陶瓷材料所製成，且絕緣環224可具有高擊穿電壓以避免火花。接 近剛描述之電容耦合電漿組成的基板製程腔室200之部分可更包括冷卻單元(未圖示)，冷卻單元包括一或多個冷卻流體通道，以用循環冷卻劑(例如，水)冷卻暴露至電漿之表面。
在所示的實施例中，一旦製程氣體受到腔室電漿區220中的電漿激發，噴頭253可(透過通孔256)分配製程氣體，該等製程氣體含有氧、氟及/或氮，及/或此類製程氣體的電漿流出物。在實施例中，導入遠端電漿系統210中及/或腔室電漿區220中的製程氣體可含有氟，例如F2、NF3或XeF2。製程氣體亦可包括諸如氦氣、氬氣、氮氣(N2)等之類的載氣。電漿流出物可包括製程氣體的離子化或中性的衍生物，且電漿流出物在此亦可指是氟游離基團，氟游離基團即為所導入的製程氣體之原子的組分。
通孔256設以抑制離子性帶電物種移出腔室電漿區220，同時允許未帶電的中性或游離基團物種通過噴頭253進入基板製程區270。該等未帶電的物種可包括高反應性物種，高反應性物種由低反應性載氣傳送通過通孔256。如上所示，可降低離子性物種通過通孔256的移動，且在某些實例中，可完全抑制離子性物種通過通孔256的移動。控制通過噴頭253之離子性物種的數量提供與下方晶圓基板接觸之氣體混合物的增強控制，增強控制轉而提高氣體混合物之沉積及/或蝕刻特徵的控制。舉例而言，氣體混合物之離子濃度中的調整可明顯 地改變氣體混合物的蝕刻選擇性(例如，氮化矽：矽的蝕刻比例)。
在實施例中，通孔256的數量可介於約60個至約2000個之間。通孔256可具有多種形狀，但通孔256最容易做成圓形。在所揭示的實施例中，通孔256的最小直徑250可介於約0.5 mm至約20 mm之間，或介於約1 mm至約6 mm之間。在選擇通孔的截面形狀上，亦有範圍，截面可做成錐形、圓柱形或該二種形狀的組合。不同實施例中，用於將未激發前驅物導進基板製程區270的小孔洞255數目可介於約100至約5000之間，或介於約500至約2000之間。小孔洞255的直徑可介於約0.1 mm至約2 mm之間。
通孔256可設以控制電漿激發氣體(即，離子性、游離基團及/或中性物種)通過噴頭253之通道。舉例而言，可控制孔的深寬比(即孔直徑比上長度)及/或孔的幾何形狀，以致降低激發氣體中之離子性帶電物種通過噴頭253之流動。噴頭253中之通孔256可包括面對腔室電漿區220之錐狀部分，與面對基板製程區270之圓柱形部分。圓柱形部分可經調整比例與尺寸以控制離子性物種通過基板製程區270之流動。亦可將可調整的電偏壓施加至噴頭253作為控制離子性物種通過噴頭253之流動的額外手段。
或者，通孔256可具有朝向噴頭253之頂部表面的較小內徑(ID)與朝向底部表面之較大ID。此外，通孔256 之底部邊緣可具有倒角以在電漿流出物離開噴頭時幫助在基板製程區270中均勻地分佈電漿流出物，並藉此促進電漿流出物與前驅物氣體的均勻分佈。可在沿著通孔256的多個位置處設置較小的ID，且仍然允許噴頭253降低基板製程區270中的離子密度。離子密度的降低起因為在進入基板製程區270之前離子與壁之碰撞數目的增加。每次碰撞提高藉由自壁取得電子或損失電子而中性化離子的可能性。一般而言，通孔256之較小ID可在約0.2 mm與約20 mm之間。在其他實施例中，較小ID可在約1 mm與6 mm之間或在約0.2 mm與約5 mm之間。再者，通孔256之深寬比(即較小ID比上孔長)可約為1比20。通孔之較小ID可為沿著通孔之長度發現的最小ID。通孔256之橫剖面形狀通常可為圓柱形、錐形或上述之任何組合。
第2B圖是根據所揭示的實施例與製程腔室一併使用的噴頭253之仰視圖。噴頭253對應第2A圖中所圖示的噴頭。通孔256被繪成在噴頭253底部處具有較大的內徑(ID)，而在頂部處具有較小的ID。小孔洞255實質上在噴頭表面上均勻分佈，小孔洞255甚至分佈在通孔256之間，相較於此述的其他實施例，此種分佈方式有助於提供更均勻的混合。
當含氟電漿流出物與含氫電漿流出物穿過噴頭253中的通孔256抵達時，示範性的圖案化基板可在基板製程區270內由底座(圖中未示)支撐。儘管可將基板製程 區270裝配成支援電漿以供諸如固化之類的其他製程所用，然而在本發明的一些實施例中，蝕刻圖案化基板期間無電漿存在。
電漿既可在噴頭253上方的腔室電漿區220中點燃，亦可在噴頭253下方的基板製程區270點燃。電漿存在於腔室電漿區220中，以從含氟前驅物的流入中產生氟游離基團。於製程腔室之導電頂部部分(蓋221)及噴頭253之間施加一般在射頻(RF)範圍的AC電壓，以在沉積期間於腔室電漿區220中點燃電漿。RF功率供應器產生13.56 MHz的高RF頻率，但RF功率供應器亦可產生其他單獨的頻率或者與13.56 MHz頻率結合的頻率。
當開啟基板製程區270中的底部電漿以固化膜或清潔接連基板製程區270的內部表面時，頂部電漿可處於低功率或無功率。透過在噴頭253及底座或腔室底部之間施加AC電壓，而點燃基板製程區270中的電漿。清潔氣體可在電漿存在時導入基板製程區270。
底座可具有熱交換通道，熱交換流體流過該熱交換通道中以控制基板溫度。此配置方式使基板溫度得以冷卻或加熱，以維持相對低的溫度(從室溫直到約120℃)。熱交換流體可包含乙二醇與水。底座的晶圓支撐淺盤(較佳為鋁、陶瓷或前述材料之組合)亦可被電阻式加熱以達成相對高的溫度(從約120℃直到約1100℃)，此加熱是透過使用嵌入式單迴圈加熱器元件達成，該元件設以造成平行的同心圓形式的兩個完整迴轉。加熱器元件的 外部可繞於鄰接支撐淺盤的周邊處，同時內部繞於具有較小半徑的同心圓的路徑上。至加熱器元件的配線穿過底座的心柱。
腔室電漿區或遠端電漿系統中的區可稱為遠端電漿區。在實施例中，游離基團前驅物(諸如，氟游離基團與氫游離基團)在遠端電漿區中生成並且行進至基板製程區中，游離基團前驅物組合在基板製程區中優先蝕刻矽。電漿功率可基本上僅被施加至遠端電漿區，在實施例中，此舉確保氟游離基團與氫游離基團(一起可被稱為電漿流出物)不在基板製程區中受到進一步激發。
在利用腔室電漿區的實施例中，被激發的電漿流出物是在與沉積區分隔的基板製程區的區段中生成。該沉積區(亦已知在此稱之為基板製程區)是電漿流出物混合並且反應以蝕刻圖案化基板(例如，半導體晶圓)之處。受激發的電漿流出物亦可伴隨惰性氣體，在該示範性實例中，該惰性氣體為氬氣。在此可將基板製程區描述為在蝕刻圖案化基板期間為「無電漿」。「無電漿」不必然意味著該區域缺乏電漿。由於通孔256的形狀與尺寸，相對低濃度之在電漿區內生成的離子化物種與自由電子確實行進穿過隔件(噴頭/離子抑制器)中的孔洞(口孔)。在某些實施例中，基板製程區中基本上沒有離子化物種與自由電子的濃度。腔室電漿區中電漿的邊界是難以界定的，且該等邊界可能透過噴頭中的口孔侵入基板製程區上。在感應耦合電漿(ICP)的實例中，可直接在基 板製程區內執行少量的離子化。再者，低強度的電漿可在基板製程區中生成，而不至於消滅形成的膜的期望特徵。激發的電漿流出物生成期間電漿的強度離子密度遠比腔室電漿區的強度離子密度低(就此而言，或者是遠比遠端電漿區的強度離子密度低)的所有原因不背離在此所用的「無電漿」之範疇。
含氟前驅物與含氫前驅物進入腔室的結合流速可佔總氣體混合物的體積的0.05%至約20%；剩餘的部分是載氣。在實施例中，含氟前驅物與含氫前驅物流進遠端電漿區但電漿流出物具有相同的體積流量比率。在含氟前驅物的實例中，可在含氟氣體之前先啟動淨化氣體或載氣進入遠端電漿區，以穩定遠端電漿區內的壓力。
施加至遠端電漿區之電漿功率可以是各種頻率或多重頻率的組合。在示範性製程系統中，由輸送至蓋221與噴頭253之間的RF功率提供電漿。不同實施例中，RF功率可介於約10瓦至約15000瓦之間、約10瓦至約5000瓦之間、約10瓦至約2000瓦之間、約200瓦至約1800瓦之間或約750瓦至約1500瓦之間。不同實施例中，示範性製程系統中所施加的RF頻率可以是低於約200 kHz的低RF頻率、約10 MHz至約15 MHz之間的高RF頻率，或大於1 GHz或約1 GHz的微波頻率。將載氣與電漿流出物流進基板製程區270期間，基板製程區270可被維持在各種壓力下。
在一或多個實施例中，基板製程腔室200可整合至多 種多製程平台，該等平台包括可購自美國加州聖克拉拉市的應用材料公司的ProducerTM GT、CenturaTM AP及EnduraTM平台。此類製程平台能夠執行數種製程操作而不破真空。除了其他類型的腔室之外，可實施本發明實施例的製程腔室可包括介電蝕刻腔室或各種化學氣相沉積腔室。
沉積系統的實施例可結合至較大型的生產積體電路晶片的製造系統。第3圖圖示根據所揭示之實施例之一個此類沉積、烘烤及固化腔室之系統300。在該圖中，一對FOUP(前開式晶圓盒)302供應基板(例如300 mm直徑的晶圓)，在該等基板放進晶圓製程腔室308a-f之一者前，基板是由機械手臂304接收並且放置到低壓固持區306。第二機械手臂310可用於從低壓固持區306傳輸基板晶圓至晶圓製程腔室308a-f並且往回傳輸。每一晶圓製程腔室308a-f可被裝備成執行多個基板製程操作，該等操作除了循環層沉積(CLD)、原子層沉積(ALD)、化學氣相沉積(CVD)、物理氣相沉積(PVD)、蝕刻、預清潔、脫氣、定向及其他基板製程之外，還包括此述的乾蝕刻製程。
晶圓製程腔室308a-f可包括一或多個系統部件，以在基板晶圓上沉積、退火、固化及/或蝕刻可流動介電膜。在一種配置方式中，兩對製程腔室(例如，308c-d及308e-f)可用於沉積介電材料於基板上，而第三對製程腔室(例如，308a-b)可用於蝕刻沉積的介電質。在另 一配置方式中，所有三對腔室(例如308a-f)可設以蝕刻於基板上的介電膜。任一或多個此述的製程可在與不同實施例中所示的製造系統分開的腔室上執行。
基板製程系統是由系統控制器控制。在一示範性實施例中，系統控制器包括硬碟機、軟碟機及處理器。處理器含有單板電腦(SBC)、類比數位輸入/輸出板、介面板及步進馬達控制板。CVD系統的多種部件符合歐洲通用模塊(VME)標準，該標準界定電路板、介面卡插件箱(card cage)以及連結器規格與類型。VME標準亦界定匯流排結構為具有16位元資料匯流排或24位元位址匯流排。
系統控制器357用於控制馬達、閥、流量控制器、功率供應器以及其他執行此述製程配方需要的功能。氣體操縱系統355也可由系統控制器357控制，以將氣體導至晶圓製程腔室308a-f的其中一個或全部。系統控制器357可仰賴來自光學感測器的反饋，以確定並且調整氣體操縱系統355及/或晶圓製程腔室308a-f中的可移動的機械組件之位置。機械組件可包括機器人、節流閥及基座，前述部件在系統控制器357控制下透過馬達移動。
在示範性實施例中，系統控制器357包括硬碟機(記憶體)、USB埠、軟碟機及處理器。系統控制器357包括類比數位輸入/輸出板、介面板及步進馬達控制板。含有基板製程腔室200的多重腔室製程系統300之各部件受到系統控制器357控制。系統控制器執行系統控制軟體，該軟體以電腦程式之形式儲存在電腦可讀媒體上， 該等媒體諸如硬碟、軟碟或快閃記憶體隨身碟。亦可使用其他種類的記憶體。電腦程式包括指令集，該等指令集指示時間、氣體混合、腔室壓力、腔室溫度、RF功率水平、基座位置及其他特殊製程參數。
可使用由控制器執行的電腦程式產品實施用於在基板上蝕刻、沉積或其他方式處理膜的製程或者用於清潔腔室的製程。電腦程式編碼可以任何傳統電腦可讀的程式語言撰寫，例如68000組語、C、C++、Pascal、Fortran或其他者。使用傳統的文件編輯器將適合的程式編碼編入單一檔案或多重檔案，並且儲存於電腦可使用媒體(如電腦的記憶體系統)或由該媒體實施。倘若編入的編碼內文是高階語言，則編譯編碼，而所得的編譯編碼隨後與預先編譯的Microsoft Windows®函式庫常式之目的碼連結。為了執行該連結、編譯的目的碼，系統使用者援用該目的碼，使電腦系統載入記憶體中的編碼。CPU隨後讀取並且執行該編碼，以執行系統中辨識的任務。
使用者與控制器之間的介面可透過接觸感應顯示器，且該介面亦可包括滑鼠及鍵盤。在一實施例中，使用兩個顯示器，一個顯示器安裝在潔淨室壁以供操作者使用，另一個顯示器在壁後以供維修技術人員使用。兩個顯示器可同時顯示相同資訊，該實例中，一次僅有一個顯示器被設置成接受輸入。為了選擇特殊的螢幕或功能，操作者以手指或滑鼠接觸顯示器螢幕上的指定的區域。接觸區域改變該區域的強調色彩，或顯示新的選單 或螢幕，確認操作者的選擇。
在此所使用的「基板」可為具有(或不具有)上面形成多個層的支撐基板。該圖案化基板可為多種摻雜濃度及摻雜輪廓的絕緣體或半導體，可例如為用在積體電路製造上的半導體基板類型。圖案化基板的暴露的「矽」主要是Si但該暴露的「矽」可包括少數濃度的其他元素組成(諸如氮、氧、氫及碳等)。圖案化基板的暴露的「氮化矽」主要是Si3N4但該暴露的「氮化矽」可包括少數濃度的其他元素組成(諸如氧、氫及碳等)。圖案化基板的暴露的「氧化矽」主要是SiO2但該暴露的「氧化矽」可包括少數濃度的其他元素組成(諸如氮、氫及碳等)。一些實施例中，使用在此揭示的方法蝕刻的氧化矽膜基本上由矽與氧構成。「前驅物」之用語是指任何參與反應從表面移除材料或沉積材料在表面上的製程氣體。「電漿流出物」是描述從腔室電漿區離開並且進入基板製程區的氣體。電漿流出物是處於「激發態」，其中至少有一些氣體分子處於振動型式的激發、解離及/或離子化的狀態。「游離基團前驅物」是用於描述參與反應從表面移除材料或沉積材料在表面上的電漿流出物(離開電漿、處於激發態的氣體)。「氟游離基團」(或「氧游離基團」)是一種含有氟(或氧)但可含有其他元素組成的游離基團前驅物。「惰性氣體」一詞是指在蝕刻或被併入膜中時不形成化學鍵結的任何氣體。示範性的惰性氣體包括稀有氣體，但示範性的惰性氣體可包括其他氣體，只要當(一 般而言)在膜中補捉到痕量的該氣體時不形成化學鍵結即可。
全文中所用之「間隙」(gap)與「溝槽」(trench)之用語毫無暗指意味地是指蝕刻過的幾何形狀具有大的水平深寬比。由表面上方所視，溝槽可顯現圓形、卵形、多邊形、矩形或各種其他形狀。溝槽可以呈現材料島狀物周圍的壕溝形狀。「介層洞」(via)一詞是指低深寬比溝槽(由上方觀看)，該介層洞可或可不被金屬填充而形成垂直的電連接。如在此所用，共形蝕刻製程指的是以與表面相同的形狀大體上均勻地移除表面上的材料，即蝕刻過的層的表面與蝕刻前的表面大體上平行。發明所屬技術領域中具有通常知識者將瞭解蝕刻過的介面可能不會100%共形，因此「大體上」之用語容許可接受的容忍度。
已在此揭示數個實施例，發明所屬技術領域中具有通常知識者應知可使用多種修飾例、替代架構與等效例而不悖離所揭示之實施例的精神。此外，說明書中不對多種習知製程與元件做說明，以避免不必要地混淆了本發明。故，上述說明不應被視為對本發明範疇之限制。
當提供一範圍的數值時，除非文本中另外清楚指明，應知亦具體揭示介於該範圍的上下限值之間各個區間值至下限值單位的十分之一。亦涵蓋了陳述範圍中之任何所陳述數值或區間值與彼陳述範圍中任何另一陳述數值或區間值之間的每個較小範圍。該等較小範圍的上限值 與下限值可獨立包含或排除於該範圍中，且各範圍(其中，在該較小範圍內包含任一個極限值、包含兩個極限值，或不含極限值)皆被本發明內所陳述之範圍涵蓋，除非在該陳述的範圍中有特別排除之限制。在所陳述之範圍包括極限值的一者或兩者之處，該範圍也包括彼等排除其中任一者或兩者被包括的極限值的範圍。
在此與如附申請專利範圍中所使用之單數形式「一」與「該」等用語也包括複數形式，除非文字中另外清楚指明。因此，舉例而言，「一種製程」所指的製程包括複數個此類製程，而「該介電材料」所指的包括一或多種介電材料以及該領域技術人士所熟知的該等材料之等效例等。
同樣，申請人希望此說明書與下述申請專利範圍中所用的「包括」與「包含」等用語是指存在所陳述之特徵、整體、部件或步驟，但該等用語不排除存在或增加一或多種其他特徵、整體、部件、步驟、動作或群組。
110、120、125、130、135、145‧‧‧製程步驟
200‧‧‧基板製程腔室
210‧‧‧遠端電漿系統
211‧‧‧氣體入口組件
212‧‧‧第一通道
213‧‧‧第二通道
220‧‧‧腔室電漿區
221‧‧‧蓋
224‧‧‧絕緣環
250‧‧‧最小直徑
251‧‧‧中空空間
253‧‧‧噴頭
255‧‧‧小孔洞
256‧‧‧通孔
270‧‧‧基板製程區
300‧‧‧製程系統
302‧‧‧前開式晶圓盒
304‧‧‧機械手臂
306‧‧‧固持區
308a、308b、308c、308d、308e、308f‧‧‧晶圓製程腔室
310‧‧‧第二機械手臂
355‧‧‧氣體操縱系統
357‧‧‧控制器
透過參考說明書之其餘部分及圖式，可進一步瞭解所揭示之實施例的本質與優點。
第1圖是根據所揭示的實施例的矽選擇性蝕刻製程的流程圖。
第2A圖圖示根據本發明實施例的基板製程腔室。
第2B圖圖示根據本發明實施例的基板製程腔室之噴頭。
第3圖圖示根據本發明實施例的基板製程系統。
在該等附圖中，相似的元件及/或特徵結構可具有相同的元件符號。再者，同類的多種元件可透過在元件符號後加上一破折號以及第二符號(該符號區別類似元件)加以區別。倘若在說明書中僅用第一元件符號，該敘述內容可應用至具有相同第一元件符號(無論第二元件符號為何)的類似元件之任一者。
110、120、125、130、135、145‧‧‧製程步驟

Claims (20)

  1. 一種在一基板製程腔室之一基板製程區中蝕刻一圖案化之基板的方法，其中該圖案化之基板具有暴露矽，該方法包括以下步驟：流動一含氟前驅物與一含氫前驅物的各者進入一遠端電漿區，同時在該遠端電漿區中形成一遠端電漿以產生電漿流出物，該遠端電漿區流體耦接至該基板製程區，其中該等前驅物的一原子流比例是大於或約為25：1的H：F，且在該遠端電漿區中形成遠端電漿以產生電漿流出物的步驟包括以下步驟：施加一RF電漿至該電漿區，該RF電漿具有一RF電漿功率；及藉由流動該等電漿流出物通過一噴頭中的數個通孔進入該基板製程區來蝕刻該暴露矽，其中在該蝕刻操作過程中的該圖案化之基板的一溫度是大於或約為0℃，且該基板製程區中之一壓力是高於或約為0.05托且低於或約為10托。
  2. 如請求項1所述之方法，其中該暴露矽包括暴露聚矽。
  3. 如請求項1所述之方法，其中該圖案化之基板的溫度是大於或約為20℃且低於或約為300℃。
  4. 如請求項1所述之方法，其中該RF電漿功率在約10瓦與約15,000瓦之間。
  5. 如請求項1所述之方法，其中該基板製程區中之壓力是高於或約為0.1托且低於或約為1托。
  6. 如請求項1所述之方法，其中在該遠端電漿區中形成該遠端電漿的步驟包括以下步驟：施加約750瓦與約1500瓦之間的RF功率至該電漿區。
  7. 如請求項1所述之方法，其中該遠端電漿是一電容耦合電漿。
  8. 如請求項1所述之方法，其中該基板製程區在蝕刻該暴露矽之操作過程中是無電漿的。
  9. 如請求項1所述之方法，更包括一預處置，該預處置用以在蝕刻該暴露矽之操作之前自該暴露矽移除一原生氧化物。
  10. 如請求項9所述之方法，其中該預處置包括流動氫(H2)進入該基板製程區，同時藉由施加一本地電漿功率至該基板製程區來形成一本地預處置電漿。
  11. 如請求項9所述之方法，其中該預處置包括流動一含氫前驅物與一含氟前驅物進入該遠端電漿區，且該得到之電漿流出物進入該基板製程區以自該暴露矽上之該原生氧化物形成固體殘餘物，該方法更包括以下步驟：加熱該圖案化之基板以昇華該固體殘餘物。
  12. 如請求項1所述之方法，更包括一在該蝕刻操作之後的蝕刻後處置，該蝕刻後處置包括：流動N2、Ar、He、NO2、N2O、H2、NH3、O2或CH4的至少一者進入該基板製程區，同時藉由施加一高於或約為100瓦且低於或約為3000瓦的本地電漿功率來形成一本地電漿。
  13. 如請求項1所述之方法，更包括一在該蝕刻操作之後的蝕刻後處置，其中該蝕刻後處置包括加熱該基板至200℃與約600℃之間。
  14. 如請求項1所述之方法，其中該圖案化之基板更包括一暴露氧化矽區，且該蝕刻操作之選擇性(暴露矽：暴露氧化矽區)是大於或約為200：1。
  15. 如請求項1所述之方法，其中該圖案化之基板更包括一暴露氮化矽區，且該蝕刻操作之選擇性(暴露矽：暴露氮化矽區)是大於或約為200：1。
  16. 如請求項1所述之方法，其中該圖案化之基板更包括一暴露金屬區，該暴露金屬區包括暴露氮化鈦或暴露鎢，且該蝕刻操作之選擇性(暴露矽：暴露金屬區)是大於或約為100：1。
  17. 如請求項1所述之方法，其中該含氟前驅物包括一選自氟化氫、氟原子、雙原子氟、三氟化氮、四氟化碳與二氟化氙所構成之群組的前驅物。
  18. 如請求項1所述之方法，其中該含氫前驅物包括氫(H2)。
  19. 如請求項1所述之方法，其中該基板製程區中基本上沒有離子化物種或自由電子。
  20. 如請求項1所述之方法，其中該噴頭中之該等通孔的最小ID是在約0.2 mm與約5 mm之間。
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