JP5079041B2 - 表示装置 - Google Patents
表示装置 Download PDFInfo
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- JP5079041B2 JP5079041B2 JP2010061796A JP2010061796A JP5079041B2 JP 5079041 B2 JP5079041 B2 JP 5079041B2 JP 2010061796 A JP2010061796 A JP 2010061796A JP 2010061796 A JP2010061796 A JP 2010061796A JP 5079041 B2 JP5079041 B2 JP 5079041B2
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- 229910052581 Si3N4 Inorganic materials 0.000 claims description 54
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 54
- 239000004065 semiconductor Substances 0.000 claims description 39
- 238000002161 passivation Methods 0.000 claims description 37
- 230000004888 barrier function Effects 0.000 claims description 28
- 230000015572 biosynthetic process Effects 0.000 claims description 16
- 239000011347 resin Substances 0.000 claims description 13
- 229920005989 resin Polymers 0.000 claims description 13
- 239000010408 film Substances 0.000 description 208
- 229910052751 metal Inorganic materials 0.000 description 55
- 239000002184 metal Substances 0.000 description 55
- 239000003990 capacitor Substances 0.000 description 34
- 239000000758 substrate Substances 0.000 description 21
- 229910052782 aluminium Inorganic materials 0.000 description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 14
- 238000005401 electroluminescence Methods 0.000 description 11
- 230000035882 stress Effects 0.000 description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 10
- 230000006866 deterioration Effects 0.000 description 10
- 239000001257 hydrogen Substances 0.000 description 10
- 229910052739 hydrogen Inorganic materials 0.000 description 10
- 229910052744 lithium Inorganic materials 0.000 description 10
- 230000006870 function Effects 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 9
- 239000010409 thin film Substances 0.000 description 9
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 239000003566 sealing material Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 238000000605 extraction Methods 0.000 description 5
- 230000014759 maintenance of location Effects 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 230000000704 physical effect Effects 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 238000007872 degassing Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 150000002894 organic compounds Chemical class 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 150000002484 inorganic compounds Chemical class 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 150000002500 ions Chemical group 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 239000002985 plastic film Substances 0.000 description 2
- 229920006255 plastic film Polymers 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000009993 protective function Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133305—Flexible substrates, e.g. plastics, organic film
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
- H05B33/04—Sealing arrangements, e.g. against humidity
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
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- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Geometry (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Control Of El Displays (AREA)
Description
また、その上に形成される平坦化層119との密着性を考慮することが望ましい。
本発明で用いる窒化シリコン膜は、高周波スパッタ法により形成される極めて緻密な膜質の窒化シリコン膜であり、以下の表1に示すプロセス条件で形成される(代表的な例についても併記した。)。なお、ここで述べる窒化シリコン膜は、本発明において、窒化シリコン膜が用いられる部分すべてに適用可能である。
また、表中の「RFSP−SiN」とは、高周波スパッタ法により形成された窒化シリコン膜を指す。また、「T/S」とは、ターゲットと基板との距離である。
なお、図13には表2の成膜条件で成膜した窒化シリコン膜についても併せて表記する。透過率については、従来のPCVD−SiN膜と比べて遜色はない。
及び第3電極120で構成される第2の容量素子並びに第3電極120、バリア膜122及び第4電極301で構成される第3の容量素子の三つの容量素子を積層形成した構成となっている。
なお、本実施の形態に示す容量素子の構成は、電流源用Csへの適用に限られるものではなく、ビデオ用Cs19その他の画素内に必要とされる容量素子(Cs)として用いることができる。
209が設けられ、上記密閉空間208の内部において、水分や酸素等を吸着して清浄な雰囲気に保ち、発光体の劣化を抑制する役割を果たす。この凹部は目の細かいメッシュ状のカバー材210で覆われており、該カバー材210は、空気や水分は通し、吸湿剤209は通さない。なお、密閉空間208は、窒素もしくはアルゴン等の希ガスで充填しておけばよく、不活性であれば樹脂もしくは液体で充填することも可能である。
に示す。保護回路205は、薄膜トランジスタ219やコンデンサ220を組み合わせて構成すれば良く、コンデンサ220として実施の形態1〜7に示した構成の容量素子を用いれば良い。
Claims (8)
- 第1の半導体膜と絶縁膜と第1の導電膜とを有するトランジスタを有し、
前記トランジスタ上に第1の窒化シリコン膜を有し、
前記第1の窒化シリコン膜上に第2の導電膜を有し、
前記第2の導電膜上に有機樹脂膜を有し、
前記有機樹脂膜上に第2の窒化シリコン膜を有し、
前記第2の窒化シリコン膜上に第3の導電膜を有し、
前記第1の窒化シリコン膜に第1の開口部を有し、
前記有機樹脂膜に第2の開口部を有し、
前記第2の窒化シリコン膜に第3の開口部を有し、
前記第2の開口部の内側に、前記第1の窒化シリコン膜と前記第2の窒化シリコン膜とが重なる領域を有し、
前記第1の半導体膜はチャネル形成領域とソース領域とドレイン領域とを有し、
前記チャネル形成領域と前記絶縁膜と前記第1の導電膜とが重なる領域を有し、
前記第2の導電膜は、前記ソース領域又は前記ドレイン領域の一方に電気的に接続されており、
前記第3の導電膜は、前記第1乃至第3の開口部を介して、前記ソース領域又は前記ドレイン領域の他方に電気的に接続されており、
前記第1の半導体膜と同じ層に第2の半導体膜を有し、
前記第2の導電膜と同じ層に第4の導電膜を有し、
前記第2の半導体膜と前記絶縁膜と前記第1の窒化シリコン膜と前記第4の導電膜とが重なる領域を有することを特徴とする表示装置。 - 請求項1において、
前記第1の半導体膜と同じ層に第3の半導体膜を有し、
前記第3の導電膜と同じ層に第5の導電膜を有し、
前記有機樹脂膜に第4の開口部を有し、
前記第4の開口部の内側に、前記第3の半導体膜と前記絶縁膜と前記第1の窒化シリコン膜と前記第2の窒化シリコン膜と前記第5の導電膜とが重なる領域を有することを特徴とする表示装置。 - 請求項1において、
前記第1の半導体膜と同じ層に第3の半導体膜を有し、
前記第1の導電膜と同じ層に第5の導電膜を有し、
前記第2の導電膜と同じ層に第6の導電膜を有し、
前記第3の半導体膜と前記絶縁膜と前記第5の導電膜とが重なる領域を有し、
前記第5の導電膜と前記第1の窒化シリコン膜と前記第6の導電膜とが重なる領域を有することを特徴とする表示装置。 - 請求項3において、
前記第3の導電膜と同じ層に第7の導電膜を有し、
前記有機樹脂膜に第4の開口部を有し、
前記第4の開口部の内側において、前記第6の導電膜と前記第2の窒化シリコン膜と前記第7の導電膜とが重なる領域を有することを特徴とする表示装置。 - 第1の半導体膜と絶縁膜と第1の導電膜とを有するトランジスタを有し、
前記トランジスタ上にパッシベーション膜を有し、
前記パッシベーション膜上に第2の導電膜を有し、
前記第2の導電膜上に平坦化膜を有し、
前記平坦化膜上にバリア膜を有し、
前記バリア膜上に第3の導電膜を有し、
前記パッシベーション膜に第1の開口部を有し、
前記平坦化膜に第2の開口部を有し、
前記バリア膜に第3の開口部を有し、
前記第2の開口部の内側に、前記パッシベーション膜と前記バリア膜とが重なる領域を有し、
前記第1の半導体膜はチャネル形成領域とソース領域とドレイン領域とを有し、
前記チャネル形成領域と前記絶縁膜と前記第1の導電膜とが重なる領域を有し、
前記第2の導電膜は、前記ソース領域又は前記ドレイン領域の一方に電気的に接続されており、
前記第3の導電膜は、前記第1乃至第3の開口部を介して、前記ソース領域又は前記ドレイン領域の他方に電気的に接続されており、
前記第1の半導体膜と同じ層に第2の半導体膜を有し、
前記第2の導電膜と同じ層に第4の導電膜を有し、
前記第2の半導体膜と前記絶縁膜と前記パッシベーション膜と前記第4の導電膜とが重なる領域を有することを特徴とする表示装置。 - 請求項5において、
前記第1の半導体膜と同じ層に第3の半導体膜を有し、
前記第3の導電膜と同じ層に第5の導電膜を有し、
前記平坦化膜に第4の開口部を有し、
前記第4の開口部の内側に、前記第3の半導体膜と前記絶縁膜と前記パッシベーション膜と前記バリア膜と前記第5の導電膜とが重なる領域を有することを特徴とする表示装置。 - 請求項5において、
前記第1の半導体膜と同じ層に第3の半導体膜を有し、
前記第1の導電膜と同じ層に第5の導電膜を有し、
前記第2の導電膜と同じ層に第6の導電膜を有し、
前記第3の半導体膜と前記絶縁膜と前記第5の導電膜とが重なる領域を有し、
前記第5の導電膜と前記パッシベーション膜と前記第6の導電膜とが重なる領域を有することを特徴とする表示装置。 - 請求項7において、
前記第3の導電膜と同じ層に第7の導電膜を有し、
前記平坦化膜に第4の開口部を有し、
前記第4の開口部の内側において、前記第6の導電膜と前記バリア膜と前記第7の導電膜とが重なる領域を有することを特徴とする表示装置。
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