CN104112742B - 一种柔性基板、柔性显示面板和柔性显示装置 - Google Patents

一种柔性基板、柔性显示面板和柔性显示装置 Download PDF

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CN104112742B
CN104112742B CN201410307410.0A CN201410307410A CN104112742B CN 104112742 B CN104112742 B CN 104112742B CN 201410307410 A CN201410307410 A CN 201410307410A CN 104112742 B CN104112742 B CN 104112742B
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layer
insulating barrier
base board
source electrode
grid
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CN104112742A (zh
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李云飞
石领
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BOE Technology Group Co Ltd
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Priority to US14/771,329 priority patent/US9685459B2/en
Priority to PCT/CN2014/087394 priority patent/WO2016000329A1/zh
Priority to EP14892228.9A priority patent/EP3163617B1/en
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Abstract

本发明提供一种柔性基板、柔性显示面板和柔性显示装置。该柔性基板包括通断元件和绝缘层,绝缘层的局部能用于作为通断元件的一部分,对应作为通断元件的一部分的绝缘层的局部与绝缘层的其余部分相分离。该柔性基板通过使对应作为通断元件的一部分的绝缘层的局部与绝缘层的其余部分相分离,从而使绝缘层断裂后的裂痕不容易经过通断元件所在的区域,即裂痕不容易经过作为通断元件的一部分的绝缘层的局部,进而能够避免通断元件出现接触不良或通断异常现象,这不仅保证了通断元件的可靠性,而且还提高了通断元件的使用寿命,确保柔性基板能够正常工作。

Description

一种柔性基板、柔性显示面板和柔性显示装置
技术领域
本发明涉及显示技术领域,具体地,涉及一种柔性基板、柔性显示面板和柔性显示装置。
背景技术
柔性显示器件以其轻薄,可弯折甚至卷曲,机械性能好的特点越来越受到人们的青睐。目前,柔性显示器件在我们生活中的应用越来越广泛。
柔性显示器件通常制作在柔性载体上,由于其弯折的特性,给其设计和制作带来了很大的挑战。
例如:如图1所示,在柔性液晶显示器件LCD和有机电致发光显示器件OLED中,存储电容14通常是必不可少的器件,一般来说,存储电容14由上下两个金属电极板15和中间的绝缘层16组成;由于柔性显示器件易于弯折,随着弯折次数的增加,绝缘层16会出现断裂,若裂痕穿过存储电容14,则会导致绝缘层16性能下降,如果绝缘层16裂痕较多,会导致存储电容14的电容值严重下降,甚至会使存储电容14出现短路,直接影响柔性显示器件的正常工作。
又如:对于柔性显示器件来说,随着弯折次数的增加,绝缘层16出现断裂,如果裂痕穿过柔性显示器件中的过孔2,则会导致通过过孔2连接的不同层金属电极之间出现接触不良,甚至断路,直接影响柔性显示器件的正常工作。
发明内容
本发明针对现有技术中存在的上述技术问题,提供一种柔性基板、柔性显示面板和柔性显示装置。该柔性基板能使绝缘层断裂后的裂痕不容易经过通断元件所在的区域,能够避免通断元件 出现接触不良或通断异常现象,这不仅保证了通断元件的可靠性,而且还提高了通断元件的使用寿命,确保柔性基板能够正常工作。
本发明提供一种柔性基板,包括通断元件和绝缘层,所述绝缘层的局部能用于作为所述通断元件的一部分,对应作为所述通断元件的一部分的所述绝缘层的局部与所述绝缘层的其余部分相分离。
优选地,所述通断元件包括电容,所述绝缘层的局部对应作为所述电容的绝缘介质;
和/或,所述通断元件包括过孔,所述绝缘层的局部对应作为所述过孔的孔壁;
和/或,所述通断元件包括晶体管,所述绝缘层的局部对应作为所述晶体管的开关绝缘层。
优选地,还包括驱动晶体管,所述驱动晶体管包括栅极、栅绝缘层、有源层、第一源极和漏极,所述有源层设置在所述栅极的上方,所述栅绝缘层设置在所述栅极和所述有源层之间,所述第一源极和所述漏极设置在所述有源层的上方,且分别位于所述有源层的两端。
优选地,所述绝缘层包括所述栅绝缘层,所述电容的两个极板分别与所述栅极和所述第一源极采用相同的材料、且形成在同一层中,所述栅绝缘层的对应位于所述电容的两个极板之间的所述局部用于作为所述电容的绝缘介质。
优选地,所述过孔包括第一过孔,所述柔性基板还包括阳极和钝化层,所述钝化层和所述阳极依次设置在所述驱动晶体管的上方,所述钝化层对应在所述阳极和所述第一源极相重叠的区域开设有所述第一过孔,所述第一过孔的孔壁上设置有导电材料,所述导电材料能使所述阳极与所述第一源极连接;
所述绝缘层包括所述钝化层,所述钝化层的对应位于所述阳极和所述第一源极之间的所述局部用于作为所述第一过孔的孔壁。
优选地,所述过孔包括第二过孔,所述柔性基板还包括开关晶体管,所述开关晶体管包括第二源极,所述第二源极与所述第一源极同层设置;所述栅绝缘层对应在所述第二源极和所述栅极相重叠的区域开设有所述第二过孔,所述第二过孔的孔壁上设置有导电材料,所述导电材料能使所述第二源极与所述栅极连接;
所述绝缘层包括所述栅绝缘层,所述栅绝缘层的对应位于所述第二源极和所述栅极之间的所述局部用于作为所述第二过孔的孔壁。
优选地,所述晶体管包括所述驱动晶体管和开关晶体管,所述开关晶体管与所述驱动晶体管同层设置且结构相同;
所述绝缘层包括所述栅绝缘层,所述栅绝缘层的对应位于所述驱动晶体管的所述栅极和所述有源层之间的所述局部用于作为所述驱动晶体管的开关绝缘层;所述栅绝缘层的对应位于所述开关晶体管的所述栅极和所述有源层之间的所述局部用于作为所述开关晶体管的开关绝缘层。
优选地,所述绝缘层的局部为单层结构,所述单层结构采用有机绝缘材料或无机绝缘材料;或者,所述绝缘层的局部为双层结构,所述双层结构中的一层采用有机绝缘材料,另一层采用无机绝缘材料。
优选地,还包括柔性载体,所述通断元件和所述绝缘层均设置在所述柔性载体上。
本发明还提供一种柔性显示面板,包括上述柔性基板。
本发明还提供一种柔性显示装置,包括上述柔性显示面板。
本发明的有益效果:本发明所提供的柔性基板,通过使对应作为通断元件的一部分的绝缘层的局部与绝缘层的其余部分相分离,从而使绝缘层断裂后的裂痕不容易经过通断元件所在的区域,即裂痕不容易经过作为通断元件的一部分的绝缘层的局部,进而能够避免通断元件出现接触不良或通断异常现象,这不仅保证了通断元件的可靠性,而且还提高了通断元件的使用寿命,确保柔性基板能够正常工作。
本发明所提供的柔性显示面板和柔性显示装置,通过采用上述柔性基板,不仅提升了柔性显示面板和柔性显示装置工作的可靠性,同时还提高了柔性显示面板和柔性显示装置的使用寿命。
附图说明
图1为现有技术中柔性显示器件的局部结构剖视图;
图2为本发明实施例1中柔性基板的结构剖视图;
图3为图2中的电容在柔性基板中的结构俯视图;
图4为图2中的过孔在柔性基板中的结构俯视图;
图5为图2中的电容的绝缘层采用双层设置的结构剖视图。
其中的附图标记说明:
1.电容;2.过孔;21.第一过孔;22.第二过孔;3.栅极;4.栅绝缘层;5.有源层;6.第一源极;7.漏极;8.钝化层;9.阳极;10.第二源极;11.间隔区域;12.有机绝缘层;13.柔性载体;14.存储电容;15.金属电极板;16.绝缘层。
具体实施方式
为使本领域的技术人员更好地理解本发明的技术方案,下面结合附图和具体实施方式对本发明所提供的一种柔性基板、柔性显示面板和柔性显示装置作进一步详细描述。
实施例1:
本实施例提供一种柔性基板,包括通断元件和绝缘层,绝缘层的局部能用于作为通断元件的一部分,对应作为通断元件的一部分的绝缘层的局部与绝缘层的其余部分相分离。
其中,通断元件是指:当该元件为能对电流进行传导的元件,电流可以流过该元件,连接在通断元件两端的元件能够实现电流导通;当该元件为不能对电流进行传导的元件时,电流不能流过该元件,连接在通断元件两端的元件之间没有电流流过,即连接在通断元件两端的元件之间保持断开,如阵列基板上的电容和晶 体管。另外,通断元件还指:当有电流流过该元件时,该元件能对电流进行传导,使连接在通断元件两端的元件能够实现电流导通;当没有电流流过该元件时,连接在通断元件两端的元件之间没有电流流过,即连接在通断元件两端的元件之间保持断开,如阵列基板上的过孔。
如图2、图3和图4所示,通断元件包括电容1和过孔2,绝缘层的局部对应作为电容1的绝缘介质,和绝缘层的局部对应作为过孔2的孔壁。
本实施例中,柔性基板还包括驱动晶体管,驱动晶体管包括栅极3、栅绝缘层4、有源层5、第一源极6和漏极7,有源层5设置在栅极3的上方,栅绝缘层4设置在栅极3和有源层5之间,第一源极6和漏极7设置在有源层5的上方,且分别位于有源层5的两端。
其中,绝缘层包括栅绝缘层4,电容1的两个极板分别与栅极3和第一源极6采用相同的材料、且在同一构图工艺中形成,栅绝缘层4的对应位于电容1的两个极板之间的局部用于作为电容1的绝缘介质。
如此设置,使作为电容1的绝缘介质的栅绝缘层4的局部与栅绝缘层4的其余部分相分离形成间隔区域11,该间隔区域11使栅绝缘层4断裂后的裂痕不容易经过电容1所在的区域,即裂痕不容易经过电容1的绝缘介质,进而能够确保电容1的电容值正常,避免出现电容1短路现象,这不仅保证了电容1的可靠性,而且还提高了电容1的使用寿命,确保柔性基板能够正常工作。
需要说明的是,本实施例中,栅极3和第一源极6分别与电容1的两个极板连接。当然,栅极3和第一源极6也可以不与电容1的两个极板连接,如在OLED阵列基板中,OLED像素驱动电路中设置有多个电容1,有的电容1的两个极板分别与栅极3和第一源极6连接,有的电容1的两个极板则与栅极3和第一源极6不连接。
本实施例中,过孔2包括第一过孔21,柔性基板还包括阳 极9和钝化层8,钝化层8和阳极9依次设置在驱动晶体管的上方,钝化层8对应在阳极9和第一源极6相重叠的区域开设有第一过孔21,第一过孔21的孔壁上设置有导电材料,导电材料能使阳极9与第一源极6连接;绝缘层包括钝化层8,钝化层8的对应位于阳极9和第一源极6之间的局部用于作为第一过孔21的孔壁。
如此设置,使作为第一过孔21的孔壁的钝化层8的局部与钝化层8的其余部分相分离形成间隔区域11,该间隔区域11使钝化层8断裂后的裂痕不容易经过第一过孔21所在的区域,即裂痕不容易经过第一过孔21的孔壁,进而能够避免第一过孔21出现接触不良或断路现象,这不仅保证了第一过孔21的可靠性,而且还提高了第一过孔21的使用寿命,确保柔性基板能够正常工作。
另外,本实施例中,过孔2包括第二过孔22,柔性基板还包括开关晶体管,开关晶体管包括第二源极10,第二源极10与第一源极6同层设置;栅绝缘层4对应在第二源极10和栅极3相重叠的区域开设有第二过孔22,第二过孔22的孔壁上设置有导电材料,导电材料能使第二源极10与栅极3连接;绝缘层包括栅绝缘层4,栅绝缘层4的对应位于第二源极10和栅极3之间的局部用于作为第二过孔22的孔壁。
如此设置,使作为第二过孔22的孔壁的栅绝缘层4的局部与栅绝缘层4的其余部分相分离形成间隔区域11,该间隔区域11使栅绝缘层4断裂后的裂痕不容易经过第二过孔22所在的区域,即裂痕不容易经过第二过孔22的孔壁,进而能够避免第二过孔22出现接触不良或断路现象,这不仅保证了第二过孔22的可靠性,而且还提高了第二过孔22的使用寿命,确保柔性基板能够正常工作。
绝缘层的局部为双层结构,双层结构中的一层采用有机绝缘材料,另一层采用无机绝缘材料。本实施例中,如图5所示,绝缘层的局部(如电容1的绝缘介质)采用双层设置,即在无机绝 缘层的上方叠加一层有机绝缘层12。由于有机绝缘层12的柔韧性比无机绝缘层好,所以有机绝缘层12的设置能够提高通断元件的可靠性,从而保证通断元件的正常通断效果。
需要说明的是,绝缘层的局部也可以为单层结构,单层结构采用有机绝缘材料和无机绝缘材料中的任意一种。
本实施例中,柔性基板还包括柔性载体13,通断元件和绝缘层均设置在柔性载体13上。柔性载体13能够随意弯折,从而使整个柔性基板能够随意弯折,从而实现了其柔性的功能。
实施例2:
本实施例提供一种柔性基板,与实施例1不同的是,通断元件只包括电容或只包括过孔。
本实施例中柔性基板的其他结构与实施例1中相同,此处不再赘述。
实施例3:
本实施例提供一种柔性基板,与实施例1-2不同的是,通断元件包括晶体管,绝缘层的局部对应作为晶体管的开关绝缘层。
其中,晶体管包括驱动晶体管和开关晶体管,开关晶体管与驱动晶体管同层设置且结构相同;绝缘层包括栅绝缘层,栅绝缘层的对应位于驱动晶体管的栅极和有源层之间的局部用于作为驱动晶体管的开关绝缘层;栅绝缘层的对应位于开关晶体管的栅极和有源层之间的局部用于作为开关晶体管的开关绝缘层。
如此设置,使作为晶体管的开关绝缘层的栅绝缘层的局部与栅绝缘层的其余部分相分离形成间隔区域,该间隔区域使栅绝缘层断裂后的裂痕不容易经过晶体管所在的区域,即裂痕不容易经过晶体管的开关绝缘层,进而能够避免晶体管出现接触不良或通断异常现象,这不仅保证了晶体管的可靠性,而且还提高了晶体管的使用寿命,确保柔性基板能够正常工作。
本实施例中柔性基板的其他结构与实施例1-2任一个中的 相同,此处不再赘述。
实施例1-3的有益效果:实施例1-3中所提供的柔性基板,通过使对应作为通断元件的一部分的绝缘层的局部与绝缘层的其余部分相分离,从而使绝缘层断裂后的裂痕不容易经过通断元件所在的区域,即裂痕不容易经过作为通断元件的一部分的绝缘层的局部,进而能够避免通断元件出现接触不良或通断异常现象,这不仅保证了通断元件的可靠性,而且还提高了通断元件的使用寿命,确保柔性基板能够正常工作。
实施例4:
本实施例提供一种柔性显示面板,包括实施例1-3任一个中的柔性基板。
通过采用上述柔性基板,提升了该柔性显示面板工作的可靠性,同时还提高了该柔性显示面板的使用寿命。
实施例5:
本实施例提供一种柔性显示装置,包括实施例4中的柔性显示面板。
通过采用上述柔性显示面板,提升了该柔性显示装置工作的可靠性,同时还提高了该柔性显示装置的使用寿命。
可以理解的是,以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式,然而本发明并不局限于此。对于本领域内的普通技术人员而言,在不脱离本发明的精神和实质的情况下,可以做出各种变型和改进,这些变型和改进也视为本发明的保护范围。

Claims (10)

1.一种柔性基板,包括通断元件和绝缘层,所述绝缘层的局部能用于作为所述通断元件的一部分,其特征在于,对应作为所述通断元件的一部分的所述绝缘层的局部与所述绝缘层的其余部分相分离并形成间隔区域;
所述通断元件包括电容,所述绝缘层的局部对应作为所述电容的绝缘介质;
和/或,所述通断元件包括过孔,所述绝缘层的局部对应作为所述过孔的孔壁;
和/或,所述通断元件包括晶体管,所述绝缘层的局部对应作为所述晶体管的开关绝缘层。
2.根据权利要求1所述的柔性基板,其特征在于,还包括驱动晶体管,所述驱动晶体管包括栅极、栅绝缘层、有源层、第一源极和漏极,所述有源层设置在所述栅极的上方,所述栅绝缘层设置在所述栅极和所述有源层之间,所述第一源极和所述漏极设置在所述有源层的上方,且分别位于所述有源层的两端。
3.根据权利要求2所述的柔性基板,其特征在于,当所述通断元件包括电容时,所述绝缘层包括所述栅绝缘层,所述电容的两个极板分别与所述栅极和所述第一源极采用相同的材料、且形成在同一层中,所述栅绝缘层的对应位于所述电容的两个极板之间的所述局部用于作为所述电容的绝缘介质。
4.根据权利要求2所述的柔性基板,其特征在于,当所述通断元件包括过孔时,所述过孔包括第一过孔,所述柔性基板还包括阳极和钝化层,所述钝化层和所述阳极依次设置在所述驱动晶体管的上方,所述钝化层对应在所述阳极和所述第一源极相重叠的区域开设有所述第一过孔,所述第一过孔的孔壁上设置有导电材料,所述导电材料能使所述阳极与所述第一源极连接;
所述绝缘层包括所述钝化层,所述钝化层的对应位于所述阳极和所述第一源极之间的所述局部用于作为所述第一过孔的孔壁。
5.根据权利要求2所述的柔性基板,其特征在于,当所述通断元件包括过孔时,所述过孔包括第二过孔,所述柔性基板还包括开关晶体管,所述开关晶体管包括第二源极,所述第二源极与所述第一源极同层设置;所述栅绝缘层对应在所述第二源极和所述栅极相重叠的区域开设有所述第二过孔,所述第二过孔的孔壁上设置有导电材料,所述导电材料能使所述第二源极与所述栅极连接;
所述绝缘层包括所述栅绝缘层,所述栅绝缘层的对应位于所述第二源极和所述栅极之间的所述局部用于作为所述第二过孔的孔壁。
6.根据权利要求2所述的柔性基板,其特征在于,当所述通断元件包括晶体管时,所述晶体管包括所述驱动晶体管和开关晶体管,所述开关晶体管与所述驱动晶体管同层设置且结构相同;
所述绝缘层包括所述栅绝缘层,所述栅绝缘层的对应位于所述驱动晶体管的所述栅极和所述有源层之间的所述局部用于作为所述驱动晶体管的开关绝缘层;所述栅绝缘层的对应位于所述开关晶体管的所述栅极和所述有源层之间的所述局部用于作为所述开关晶体管的开关绝缘层。
7.根据权利要求1所述的柔性基板,其特征在于,所述绝缘层的局部为单层结构,所述单层结构采用有机绝缘材料或无机绝缘材料;或者,所述绝缘层的局部为双层结构,所述双层结构中的一层采用有机绝缘材料,另一层采用无机绝缘材料。
8.根据权利要求1所述的柔性基板,其特征在于,还包括柔性载体,所述通断元件和所述绝缘层均设置在所述柔性载体上。
9.一种柔性显示面板,其特征在于,包括权利要求1-8任意一项所述的柔性基板。
10.一种柔性显示装置,其特征在于,包括权利要求9所述的柔性显示面板。
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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106169481B (zh) * 2016-07-20 2019-04-05 武汉华星光电技术有限公司 柔性阵列基板及其制备方法、柔性显示装置
KR102512725B1 (ko) * 2018-02-28 2023-03-23 삼성디스플레이 주식회사 디스플레이 장치
CN210110300U (zh) * 2019-08-16 2020-02-21 北京京东方技术开发有限公司 像素驱动电路、阵列基板和显示装置
US11329073B2 (en) * 2019-10-29 2022-05-10 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Display panel
CN115735431A (zh) * 2021-06-24 2023-03-03 京东方科技集团股份有限公司 显示基板及显示装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1465077A (zh) * 2001-04-27 2003-12-31 松下电器产业株式会社 电容器及其制造方法
CN102486906A (zh) * 2010-12-01 2012-06-06 精工爱普生株式会社 薄膜晶体管形成用基板、半导体装置、电气装置
CN103441119A (zh) * 2013-07-05 2013-12-11 京东方科技集团股份有限公司 一种制造esd器件的方法、esd器件和显示面板
CN103545320A (zh) * 2013-11-11 2014-01-29 京东方科技集团股份有限公司 显示基板和含有该显示基板的柔性显示装置
CN203521412U (zh) * 2013-10-12 2014-04-02 京东方科技集团股份有限公司 一种显示基板和含有该显示基板的柔性显示装置
CN204029804U (zh) * 2014-06-30 2014-12-17 京东方科技集团股份有限公司 一种柔性基板、柔性显示面板和柔性显示装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100192370B1 (ko) * 1996-01-10 1999-06-15 구자홍 액정표시장치의 제조방법
US7256421B2 (en) * 2002-05-17 2007-08-14 Semiconductor Energy Laboratory, Co., Ltd. Display device having a structure for preventing the deterioration of a light emitting device
TW200629421A (en) * 2005-01-12 2006-08-16 Sanyo Electric Co Method of producing semiconductor device
KR100670379B1 (ko) 2005-12-15 2007-01-16 삼성에스디아이 주식회사 유기 박막 트랜지스터, 그 제조방법 및 이를 구비한 유기발광 디스플레이 장치
JP2007288078A (ja) * 2006-04-20 2007-11-01 Seiko Epson Corp フレキシブル電子デバイス及びその製造方法
JP2009031742A (ja) * 2007-04-10 2009-02-12 Fujifilm Corp 有機電界発光表示装置
US7851281B2 (en) * 2007-11-28 2010-12-14 Panasonic Corporation Manufacturing method of flexible semiconductor device and flexible semiconductor device
TWI443829B (zh) * 2010-04-16 2014-07-01 Ind Tech Res Inst 電晶體及其製造方法
KR101925540B1 (ko) * 2011-08-04 2019-02-28 삼성디스플레이 주식회사 박막 트랜지스터 어레이 기판, 이를 포함하는 유기 발광 표시 장치 및 그 제조 방법
JP5558446B2 (ja) * 2011-09-26 2014-07-23 株式会社東芝 光電変換装置及びその製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1465077A (zh) * 2001-04-27 2003-12-31 松下电器产业株式会社 电容器及其制造方法
CN102486906A (zh) * 2010-12-01 2012-06-06 精工爱普生株式会社 薄膜晶体管形成用基板、半导体装置、电气装置
CN103441119A (zh) * 2013-07-05 2013-12-11 京东方科技集团股份有限公司 一种制造esd器件的方法、esd器件和显示面板
CN203521412U (zh) * 2013-10-12 2014-04-02 京东方科技集团股份有限公司 一种显示基板和含有该显示基板的柔性显示装置
CN103545320A (zh) * 2013-11-11 2014-01-29 京东方科技集团股份有限公司 显示基板和含有该显示基板的柔性显示装置
CN204029804U (zh) * 2014-06-30 2014-12-17 京东方科技集团股份有限公司 一种柔性基板、柔性显示面板和柔性显示装置

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