JP3656819B2 - Ｅｌ表示装置 - Google Patents

Ｅｌ表示装置 Download PDF

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Publication number
JP3656819B2
JP3656819B2 JP2000124078A JP2000124078A JP3656819B2 JP 3656819 B2 JP3656819 B2 JP 3656819B2 JP 2000124078 A JP2000124078 A JP 2000124078A JP 2000124078 A JP2000124078 A JP 2000124078A JP 3656819 B2 JP3656819 B2 JP 3656819B2
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JP
Japan
Prior art keywords
tft
current control
insulating film
concentration
switching
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Expired - Fee Related
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JP2000124078A
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English (en)
Japanese (ja)
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JP2001013893A (ja
Inventor
幸夫 山内
健司 福永
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2000124078A priority Critical patent/JP3656819B2/ja
Publication of JP2001013893A publication Critical patent/JP2001013893A/ja
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Publication of JP3656819B2 publication Critical patent/JP3656819B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H10D30/6719—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions having significant overlap between the lightly-doped drains and the gate electrodes, e.g. gate-overlapped LDD [GOLDD] TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/471—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different architectures, e.g. having both top-gate and bottom-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0421—Structural details of the set of electrodes
    • G09G2300/0426—Layout of electrodes and connections
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • G09G2300/0861—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor with additional control of the display period without amending the charge stored in a pixel memory, e.g. by means of additional select electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Control Of El Displays (AREA)
JP2000124078A 1999-04-27 2000-04-25 Ｅｌ表示装置 Expired - Fee Related JP3656819B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000124078A JP3656819B2 (ja) 1999-04-27 2000-04-25 Ｅｌ表示装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP11946699 1999-04-27
JP11-119466 1999-04-27
JP2000124078A JP3656819B2 (ja) 1999-04-27 2000-04-25 Ｅｌ表示装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2003027199A Division JP2003317961A (ja) 1999-04-27 2003-02-04 Ｅｌ表示装置

Publications (2)

Publication Number Publication Date
JP2001013893A JP2001013893A (ja) 2001-01-19
JP3656819B2 true JP3656819B2 (ja) 2005-06-08

Family

ID=14762044

Family Applications (16)

Application Number Title Priority Date Filing Date
JP2000124078A Expired - Fee Related JP3656819B2 (ja) 1999-04-27 2000-04-25 Ｅｌ表示装置
JP2003027199A Withdrawn JP2003317961A (ja) 1999-04-27 2003-02-04 Ｅｌ表示装置
JP2005162349A Expired - Fee Related JP4275651B2 (ja) 1999-04-27 2005-06-02 Ｅｌ表示装置及び電子器具
JP2008280095A Expired - Fee Related JP4885194B2 (ja) 1999-04-27 2008-10-30 半導体装置
JP2011230588A Expired - Fee Related JP5322355B2 (ja) 1999-04-27 2011-10-20 Ｅｌ表示装置
JP2012086960A Expired - Lifetime JP5487237B2 (ja) 1999-04-27 2012-04-06 Ｅｌ表示装置
JP2013100870A Expired - Lifetime JP5526260B2 (ja) 1999-04-27 2013-05-13 Ｅｌ表示装置
JP2013100869A Expired - Lifetime JP5526259B2 (ja) 1999-04-27 2013-05-13 Ｅｌ表示装置
JP2013119442A Expired - Lifetime JP5634563B2 (ja) 1999-04-27 2013-06-06 Ｅｌ表示装置
JP2014070860A Expired - Lifetime JP5764686B2 (ja) 1999-04-27 2014-03-31 半導体装置
JP2014213637A Expired - Lifetime JP5947858B2 (ja) 1999-04-27 2014-10-20 半導体装置
JP2015139666A Withdrawn JP2016006513A (ja) 1999-04-27 2015-07-13 半導体装置
JP2017051578A Expired - Lifetime JP6502600B2 (ja) 1999-04-27 2017-03-16 Ｅｌ表示装置
JP2017084305A Expired - Lifetime JP6345837B2 (ja) 1999-04-27 2017-04-21 Ｅｌ表示装置
JP2017230740A Expired - Lifetime JP6513778B2 (ja) 1999-04-27 2017-11-30 発光装置
JP2018231083A Withdrawn JP2019053325A (ja) 1999-04-27 2018-12-10 半導体装置

Family Applications After (15)

Application Number Title Priority Date Filing Date
JP2003027199A Withdrawn JP2003317961A (ja) 1999-04-27 2003-02-04 Ｅｌ表示装置
JP2005162349A Expired - Fee Related JP4275651B2 (ja) 1999-04-27 2005-06-02 Ｅｌ表示装置及び電子器具
JP2008280095A Expired - Fee Related JP4885194B2 (ja) 1999-04-27 2008-10-30 半導体装置
JP2011230588A Expired - Fee Related JP5322355B2 (ja) 1999-04-27 2011-10-20 Ｅｌ表示装置
JP2012086960A Expired - Lifetime JP5487237B2 (ja) 1999-04-27 2012-04-06 Ｅｌ表示装置
JP2013100870A Expired - Lifetime JP5526260B2 (ja) 1999-04-27 2013-05-13 Ｅｌ表示装置
JP2013100869A Expired - Lifetime JP5526259B2 (ja) 1999-04-27 2013-05-13 Ｅｌ表示装置
JP2013119442A Expired - Lifetime JP5634563B2 (ja) 1999-04-27 2013-06-06 Ｅｌ表示装置
JP2014070860A Expired - Lifetime JP5764686B2 (ja) 1999-04-27 2014-03-31 半導体装置
JP2014213637A Expired - Lifetime JP5947858B2 (ja) 1999-04-27 2014-10-20 半導体装置
JP2015139666A Withdrawn JP2016006513A (ja) 1999-04-27 2015-07-13 半導体装置
JP2017051578A Expired - Lifetime JP6502600B2 (ja) 1999-04-27 2017-03-16 Ｅｌ表示装置
JP2017084305A Expired - Lifetime JP6345837B2 (ja) 1999-04-27 2017-04-21 Ｅｌ表示装置
JP2017230740A Expired - Lifetime JP6513778B2 (ja) 1999-04-27 2017-11-30 発光装置
JP2018231083A Withdrawn JP2019053325A (ja) 1999-04-27 2018-12-10 半導体装置

Country Status (3)

Country Link
US (7) US6512504B1 (enExample)
EP (2) EP2259328B1 (enExample)
JP (16) JP3656819B2 (enExample)

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JP2001013523A (ja) * 1999-06-30 2001-01-19 Nec Corp 液晶表示装置及びその製造方法
JP4472073B2 (ja) * 1999-09-03 2010-06-02 株式会社半導体エネルギー研究所 表示装置及びその作製方法
JP2001109404A (ja) * 1999-10-01 2001-04-20 Sanyo Electric Co Ltd Ｅｌ表示装置
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JP4540219B2 (ja) * 2000-12-07 2010-09-08 エーユー オプトロニクス コーポレイション 画像表示素子、画像表示装置、画像表示素子の駆動方法
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JP3797877B2 (ja) * 2001-02-05 2006-07-19 シャープ株式会社 アクティブマトリックス駆動型有機ｌｅｄ表示装置
JP4777380B2 (ja) * 2001-02-07 2011-09-21 株式会社半導体エネルギー研究所 発光装置
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